Michler, Peter

Bothner D.; Clauss C.; Koroknay E.; Kemmler M.; Gaber T.; Jetter M.; Scheffler M.; Michler P.; Dressel M.; Koelle D.; Kleiner R.

Reducing vortex losses in superconducting microwave resonators with microsphere patterned antidot arrays

Schwarzbäck T.; Kahle H.; Eichfelder M.; Roßbach R.; Jetter M.; Michler P.

Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm

Kessler Christian A.; Reischle Matthias; Schulz Wolfgang-Michael; Eichfelder Marcus; Roßbach Robert; Jetter Michael; Michler Peter

High‐frequency Triggered Single—Photon Emission From Electrically Driven InP/(Al,Ga)InP Quantum Dots

Bothner D.; Clauss C.; Koroknay E.; Kemmler M.; Gaber T.; Jetter M.; Scheffler M.; Michler P.; Dressel M.; Koelle D.; Kleiner R.

Reducing vortex losses in superconducting microwave resonators with microsphere patterned antidot arrays

Schwarzbäck T.; Kahle H.; Eichfelder M.; Roßbach R.; Jetter M.; Michler P.

Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm

Kessler Christian A.; Reischle Matthias; Schulz Wolfgang-Michael; Eichfelder Marcus; Roßbach Robert; Jetter Michael; Michler Peter

High‐frequency Triggered Single—Photon Emission From Electrically Driven InP/(Al,Ga)InP Quantum Dots

Wiesner M.; Weidenfeld S.; Eichfelder M.; Schaal F.; Pruss C.; Osten W.; Roßbach R.; Jetter M.; Michler P.

AlGaInP‐based Vertical‐Cavity Surface‐Emitting Lasers for Sensoring and Polarization Switching

Wiesner M.; Schulz W.-M.; Angelopoulos E. A.; Burghartz J. N.; Werner J.; Oehme M.; Schulze J.; Roßbach R.; Jetter M.; Michler P.

Approaches for III/V Photonics on Si

Jöns K. D.; Hafenbrak R.; Singh R.; Ding F.; Plumhof J. D.; Rastelli A.; Schmidt O. G.; Bester G.; Michler P.

Dependence of the Redshifted and Blueshifted Photoluminescence Spectra of Single InxGa1-xAs/GaAs Quantum Dots on the Applied Uniaxial Stress

Bommer M.; Schulz W.-M.; Roßbach R.; Jetter M.; Michler P.; Thomay T.; Leitenstorfer A.; Bratschitsch R.

Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K

Ulrich S. M.; Ates S.; Reitzenstein S.; Löffler A.; Forchel A.; Michler P.

Dephasing of Triplet-Sideband Optical Emission of a Resonantly Driven InAs/GaAs Quantum Dot inside a Microcavity

Witzany M.; Roßbach R.; Schulz W.-M.; Jetter M.; Michler P.; Liu T.-L.; Hu E.; Wiersig J.; Jahnke F.

Lasing properties of InP/(Ga0.51In0.49)P quantum dots in microdisk cavities

Plumhof J. D.; Křápek V.; Ding F.; Jöns K. D.; Hafenbrak R.; Klenovský P.; Herklotz A.; Dörr K.; Michler P.; Rastelli A.; Schmidt O. G.

Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots

Weiler S.; Ulhaq A.; Ulrich S. M.; Reitzenstein S.; Löffler A.; Forchel A.; Michler P.

Emission characteristics of a highly correlated system of a quantum dot coupled to two distinct micropillar cavity modes

Reischle M.; Kessler C.; Schulz W.-M.; Eichfelder M.; Roßbach R.; Jetter M.; Michler P.

Triggered single-photon emission from electrically excited quantum dots in the red spectral range

Hermannstädter C.; Beirne G. J.; Witzany M.; Heldmaier M.; Peng J.; Bester G.; Wang L.; Rastelli A.; Schmidt O. G.; Michler P.

Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules

Richter Daniel; Roßbach Robert; Schulz Wolfgang-Michael; Koroknay Elisabeth; Kessler Christian; Jetter Michael; Michler Peter

Low-density InP quantum dots embedded in Ga0.51In0.49P with high optical quality realized by a strain inducing layer

Ulhaq A.; Ates S.; Weiler S.; Ulrich S. M.; Reitzenstein S.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Michler P.

Linewidth broadening and emission saturation of a resonantly excited quantum dot monitored via an off-resonant cavity mode

Schulz Wolfgang-Michael; Thomay Tim; Eichfelder Marcus; Bommer Moritz; Wiesner Michael; Roßbach Robert; Jetter Michael; Bratschitsch Rudolf; Leitenstorfer Alfred; Michler Peter

Optical properties of red emitting self-assembled InP/(Al0.20Ga0.80)0.51In0.49P quantum dot based micropillars

Stöhr R. J.; Beirne G. J.; Michler P.; Scholz R.; Wrachtrup J.; Pflaum J.

Enhanced photoluminescence from self-organized rubrene single crystal surface structures

Peng J.; Hermannstädter C.; Witzany M.; Heldmaier M.; Wang L.; Kiravittaya S.; Rastelli A.; Schmidt O. G.; Michler P.; Bester G.

Heterogeneous confinement in laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric fields

Schulz Wolfgang-Michael; Eichfelder Marcus; Ro${\ss}$bach Robert; Jetter Michael; Michler Peter

Low Threshold InP/AlGaInP Quantum Dot In-Plane Laser Emitting at 638 nm

Eichfelder Marcus; Schulz Wolfgang-Michael; Reischle Matthias; Wiesner Michael; Roßbach Robert; Jetter Michael; Michler Peter

Room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in a vertical microcavity

Hermannstädter C.; Witzany M.; Beirne G. J.; Schulz W.-M.; Eichfelder M.; Rossbach R.; Jetter M.; Michler P.; Wang L.; Rastelli A.; Schmidt O. G.

Polarization fine structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar microcavity

Schulz W.-M.; Roßbach R.; Reischle M.; Beirne G. J.; Bommer M.; Jetter M.; Michler P.

Optical and structural properties of InP quantum dots embedded in (AlxGa1-x;)0.51In0.49P

Ates S.; Gies C.; Ulrich S. M.; Wiersig J.; Reitzenstein S.; Löffler A.; Forchel A.; Jahnke F.; Michler P.

Influence of the spontaneous optical emission factor β; on the first-order coherence of a semiconductor microcavity laser

Reischle M.; Beirne G. J.; Roßbach R.; Jetter M.; Michler P.

Influence of the Dark Exciton State on the Optical and Quantum Optical Properties of Single Quantum Dots

Reischle M.; Beirne G, J.; Schulz W.-M.; Eichfelder M.; Ro??bach R.; Jetter M.; Michler P.

Electrically pumped single-photon emission in the visible spectral range up to 80 K

Roßbach Robert; Reischle Matthias; Beirne Gareth J.; Jetter Michael; Michler Peter

Red single-photon emission from an InP/;GaInP quantum dot embedded in a planar monolithic microcavity

Reischle M.; Beirne G. J.; Roßbach R.; Jetter M.; Schweizer H.; Michler P.

Nonresonant tunneling in single asymmetric pairs of vertically stacked InP quantum dots

Vogel M. M.; Ulrich S. M.; Hafenbrak R.; Michler P.; Wang L.; Rastelli A.; Schmidt O. G.

Influence of lateral electric fields on multiexcitonic transitions and fine structure of single quantum dots

Beirne Gareth J.; Reischle Matthias; Roßbach Robert; Schulz Wolfgang-Michael; Jetter Michael; Seebeck Jan; Gartner Paul; Gies Christopher; Jahnke Frank; Michler Peter

Electronic shell structure and carrier dynamics of high aspect ratio InP single quantum dots

Wunderer Thomas; Brückner Peter; Hertkorn Joachim; Scholz Ferdinand; Beirne Gareth J.; Jetter Michael; Michler Peter; Feneberg Martin; Thonke Klaus

Time- and locally resolved photoluminescence of semipolar GaInN/;GaN facet light emitting diodes

Ates S.; Ulrich S. M.; Michler P.; Reitzenstein S.; Löffler A.; Forchel A.

Coherence properties of high-β; elliptical semiconductor micropillar lasers

Hermannstädter C.; Beirne G. J.; Wang L.; Rastelli A.; Schmidt O. G.; Michler P.

Time‐Resolved Optical Spectroscopy of Tunnel Coupled Lateral Quantum Dot Molecules

Reischle Matthias; Beirne Gareth J.; Rossbach Robert; Jetter Michael; Michler Peter

Temperature Dependent Photoluminescence Measurements of Single InP Quantum Dots

Ulrich S. M.; Gies C.; Ates S.; Wiersig J.; Reitzenstein S.; Hofmann C.; Löffler A.; Forchel A.; Jahnke F.; Michler P.

Photon Statistics of Semiconductor Microcavity Lasers

Schwab M.; Benyoucef M.; Forchel A.; Reithmaier J. P.; Jahnke F.; Gies C.; Baer N.; Wiersig J.; Bayer M.; Berstermann T.; Auer T.; Kurtze H.; Michler P.

Radiative emission dynamics of quantum dots in a single cavity micropillar

Beirne G. J.; Hermannstädter C.; Wang L.; Rastelli A.; Schmidt O. G.; Michler P.

Quantum Light Emission of Two Lateral Tunnel-Coupled (In,Ga)As/GaAs Quantum Dots Controlled by a Tunable Static Electric Field

Beirne G. J.; Jetter M.; Michler P.; Schweizer H.

Single-photon emission from a type-B InP/;GaInP quantum dot

Baer Norman; Wiersig Jan; Gartner Paul; Jahnke Frank; Benyoucef Mohamed; Ulrich Sven M.; Michler Peter; Forchel Alfred

Optical properties of semiconductor quantum dots and pillar microcavities

Ulrich S. M.; Kurtze H.; Oulton R.; Bayer M.; Fafard S.; Wasilewski Z.; Benyoucef M.; Michler P.; Wiersig J.; Baer N.; Gartner P.; Jahnke F.; Schwab M.; Forchel A.

Single‐Photon And Photon Pair Emission From Individual (In,Ga)As Quantum Dots

Ulrich S. M.; Wasilewski Z.; Fafard S.; Bayer M.; Kurtze H.; Schwab M.; Jahnke F.; Gartner P.; Baer N.; Michler P.; Benyoucef M.; Forchel A.

Correlated photon-pair emission from a charged single quantum dot

Benyoucef M.; Ulrich S. M.; Michler P.; Wiersig J.; Jahnke F.; Forchel A.

Correlated photon pairs from single (In,Ga)As/;GaAs quantum dots in pillar microcavities

Ulrich S. M.; Strauf S.; Michler P.; Bacher G.; Forchel A.

Triggered polarization-correlated photon pairs from a single CdSe quantum dot

Strauf S.; Michler P.; Klude M.; Hommel D.; Bacher G.; Forchel A.

Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

Sebald K.; Michler P.; Passow T.; Hommel D.; Bacher G.; Forchel A.

Single-photon emission of CdSe quantum dots at temperatures up to 200 K

Vehse M.; Michler P.; Gösling I.; Röwe M.; Gutowski J.; Bader S.; Lell A.; Brüderl G.; Härle V.

Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Davies J. J.; Tournié E.; Hommel D.; Ohkawa K.; Klude M.; Gutowski J.; Michler P.; Strauf S.; Wolverson D.; Faurie J.-P.

Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

Vehse M.; Michler P.; Lange O.; Röwe M.; Gutowski J.; Bader S.; Lugauer H.-J.; Brüderl G.; Weimar A.; Lell A.; Härle V.

Optical gain and saturation in nitride-based laser structures

Homburg O.; Sebald K.; Michler P.; Gutowski J.; Wenisch H.; Hommel D.

Negatively charged trion in ZnSe single quantum wells with very low electron densities

Lilienkamp T.; Michler P.; Ebeling W.; Gutowski J.; Behringer M.; Fehrer M.; Hommel D.

Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitons in (Zn,Cd)Se/Zn(S,Se) structures

Homburg O.; Behringer M.; Wenisch H.; Gutowski J.; Heinecke R.; Michler P.; Hommel D.

Biexcitonic gain characteristics in ZnSe-based lasers with binary wells

Merbach D.; Schöll E.; Ebeling W.; Michler P.; Gutowski J.

Electric-field-dependent absorption of ZnSe-based quantum wells: The transition from two-dimensional to three-dimensional behavior

Michler P.; Vehse M.; Gutowski J.; Behringer M.; Hommel D.; Pereira M. F.; Henneberger K.

Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers

Michler P.; Lilienkamp T.; Ebeling W.; Gutowski J.; Behringer M.; Fehrer M.; Hommel D.

Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue–green spectral region

Michler P.; Neukirch U.; Wundke K.; Gutowski J.; Behringer M.; Hommel D.

Picosecond lasing dynamics of gain-switched (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers

Michler P.; Hilpert M.; Reiner G.

Dynamics of dual-wavelength emission from a coupled semiconductor microcavity laser

Michler P.; Hilpert M.; Rühle W. W.; Wolf H. D.; Bernklau D.; Riechert H.

Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers

Michler P.; Rühle W. W.; Reiner G.; Ebeling K. J.; Moritz A.

Time‐bandwidth product of gain‐switched In;0.2Ga0.8As/GaAs microcavity lasers

Michler P.; Lohner A.; Rühle W. W.; Reiner G.

Transient pulse response of In0.2Ga0.8As/GaAs microcavity lasers

Sternschulte H.; Thonke K.; Sauer R.; Münzinger P. C.; Michler P.

1.681‐eV luminescence center in chemical‐vapor‐deposited homoepitaxial diamond films

Michler P.; Forner T.; Hofsäβ V.; Prins F.; Zieger K.; Scholz F.; Hangleiter A.

Nonradiative recombination via strongly localized defects in quantum wells

Härle V.; Bolay H.; Lux E.; Michler P.; Moritz A.; Forner T.; Hangleiter A.; Scholz F.

Indirect‐band‐gap transition in strained GaInAs/InP quantum‐well structures

Michler P.; Hangleiter A.; Moritz A.; Fuchs G.; Härle V.; Scholz F.

Direct‐to‐indirect energy‐gap transition in strained Ga;xIn1-;xAs/InP quantum wells

Michler P.; Hangleiter A.; Moritz A.; Härle V.; Scholz F.

Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells

Michler P.; Hangleiter A.; Dieter R.; Scholz F.

Identification of a nonradiative recombination center in GaAs

Michler P.; Hangleiter A.; Moser M.; Geiger M.; Scholz F.

Influence of barrier height on carrier lifetime in Ga1-;yInyP/(AlxGa1-;x)1-;yInyP single quantum wells