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Konagai, Makoto

Computed

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Research Profile

Latest Publications

1.
2011

Inthisang Sorapong; Krajangsang Taweewat; Sichanugrist Porponth; Watahiki Tatsuro; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells
Jpn. J. Appl. Phys., Part 1 50, 111401 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2.
2011

Irikawa Junpei; Miyajima Shinsuke; Watahiki Tatsuro; Konagai Makoto

High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer
Appl. Phys. Express 4, 092301 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
3.
2011

Rattanapan Suttirat; Watahiki Tatsuro; Miyajima Shinsuke; Konagai Makoto

Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide
Jpn. J. Appl. Phys., Part 1 50, 082301 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

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All Publications

1.
2011

Inthisang Sorapong; Krajangsang Taweewat; Sichanugrist Porponth; Watahiki Tatsuro; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells
Jpn. J. Appl. Phys., Part 1 50, 111401 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2.
2011

Irikawa Junpei; Miyajima Shinsuke; Watahiki Tatsuro; Konagai Makoto

High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer
Appl. Phys. Express 4, 092301 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
3.
2011

Rattanapan Suttirat; Watahiki Tatsuro; Miyajima Shinsuke; Konagai Makoto

Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide
Jpn. J. Appl. Phys., Part 1 50, 082301 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
4.
2011

Zhang Yiwen; Ito Manabu; Tamura Tomoaki; Yamada Akira; Konagai Makoto

Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach
Jpn. J. Appl. Phys., Part 1 50, 04DP12 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
5.
2011

Hoshina Yutaka; Shimizu Masayuki; Yamada Akira; Konagai Makoto

Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber
Jpn. J. Appl. Phys., Part 1 50, 04DP08 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
6.
2011

Konagai Makoto

Present Status and Future Prospects of Silicon Thin-Film Solar Cells
Jpn. J. Appl. Phys., Part 1 50, 030001 (2011)
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
7.
2011

Miyajima Shinsuke; Irikawa Junpei; Yamada Akira; Konagai Makoto

Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter
J. Appl. Phys. 109, 054507 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
8.
2011

Irikawa Junpei; Miyajima Shinsuke; Kida Shuhei; Watahiki Tatsuro; Konagai Makoto

Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
Jpn. J. Appl. Phys., Part 1 50, 012301 (2011)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
9.
2010

Miyajima Shinsuke; Irikawa Junpei; Yamada Akira; Konagai Makoto

High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells
Appl. Phys. Lett. 97, 023504 (2010)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
10.
2010

Hongsingthong Aswin; Krajangsang Taweewat; Yunaz Ihsanul Afdi; Miyajima Shinsuke; Konagai Makoto

ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells
Appl. Phys. Express 3, 051102 (2010)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
11.
2009

Hoshina Yutaka; Yamada Akira; Konagai Makoto

Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 48, 111102 (2009)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
12.
2008

Limmanee Amornrat; Sugiura Tsutomu; Yamamoto Hiroshi; Sato Takehiko; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
Jpn. J. Appl. Phys., Part 1 47, 8796 (2008)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
13.
2008

Sritharathikhun Jaran; Yamamoto Hiroshi; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
Jpn. J. Appl. Phys., Part 1 47, 8452 (2008)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
14.
2008

Hiza Shuichi; Yamada Akira; Konagai Makoto

Characterization of Defects-Location in Hydrogenated Microcrystalline Silicon Thin Films and Its Influence on Solar Cell Performance
Jpn. J. Appl. Phys., Part 1 47, 6222 (2008)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
15.
2008

Miyajima Shinsuke; Yamada Akira; Sawamura Makoto; Konagai Makoto

Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature
Jpn. J. Appl. Phys., Part 1 47, 3368 (2008)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
16.
2008

Sriprapha Kobsak; Myong Seung Yeop; Yamada Akira; Konagai Makoto

Temperature Dependence of Protocrystalline Silicon/Microcrystalline Silicon Double-Junction Solar Cells
Jpn. J. Appl. Phys., Part 1 47, 1496 (2008)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
17.
2007

Yunaz Ihsanul Afdi; Yamada Akira; Konagai Makoto

Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells
Jpn. J. Appl. Phys., Part 2 46, L1152 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
18.
2007

Sriprapha Kobsak; Yamada Akira; Myong Seung Yeop; Yunaz Ihsanul Afdi; Konagai Makoto

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase
Jpn. J. Appl. Phys., Part 1 46, 7212 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
19.
2007

Sato Takehiko; Sugiura Tsutomu; Ohtsubo Michio; Matsuno Shigeru; Konagai Makoto

Texture Etching of Si with Atomic Hydrogen Generated by Hot Wire Method through SiO2 Masks for Solar Cell Applications
Jpn. J. Appl. Phys., Part 1 46, 6796 (2007)
Photovoltaic and Power Storage Group Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, Sagamihara, Kanagawa 229-1195, Japan;
20.
2007

Kurokawa Yasuyoshi; Yamada Akira; Miyajima Shinsuke; Tomita Shigeki; Konagai Makoto

Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice
Jpn. J. Appl. Phys., Part 2 46, L833 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
21.
2007

Chiba Yoshiyuki; Yamada Akira; Meng Fanying; Konagai Makoto

Growth of Polycrystalline Zn1-XMgXO Thin Films Using EtCp2Mg and MeCp2Mg by Metal Organic Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 1 46, 5040 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
22.
2007

Miyajima Shinsuke; Yamada Akira; Sawamura Makoto; Konagai Makoto

Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 2 46, L693 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
23.
2007

Myong Seung Yeop; Sriprapha Kobsak; Miyajima Shinsuke; Konagai Makoto; Yamada Akira

High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer
Appl. Phys. Lett. 90, 263509 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
24.
2007

Sritharathikhun Jaran; Banerjee Chandan; Otsubo Michio; Sugiura Tsutomu; Yamamoto Hiroshi; Sato Takehiko; Limmanee Amornrat; Yamada Akira; Konagai Makoto

Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film
Jpn. J. Appl. Phys., Part 1 46, 3296 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
25.
2007

Yashiki Yasutoshi; Yamada Akira; Miyajima Shinsuke; Konagai Makoto

Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane
Jpn. J. Appl. Phys., Part 1 46, 2865 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
26.
2007

Ishihara Hanae; Murano Masahiko; Yamada Akira; Konagai Makoto

Growth of Strain-Relaxed Si1-yCy Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 46, 1600 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
27.
2007

Hiza Shuichi; Yamada Akira; Konagai Makoto

Low-temperature Deposition of Hydrogenated Microcrystalline Silicon Thin Films by Photochemical Vapor Deposition Technique and Their Application to Thin Film Solar Cells
Jpn. J. Appl. Phys., Part 1 46, 1427 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
28.
2007

Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
Jpn. J. Appl. Phys., Part 1 46, 1415 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
29.
2007

Yunaz Ihsanul Afdi; Sriprapha Kobsak; Hiza Shuichi; Yamada Akira; Konagai Makoto

Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells
Jpn. J. Appl. Phys., Part 1 46, 1398 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
30.
2007

Limmanee Amornrat; Otsubo Michio; Sato Takehiko; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
Jpn. J. Appl. Phys., Part 1 46, 56 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
31.
2007

Banerjee Chandan; Narayanan Kannan Lakshmi; Haga Keisuke; Sritharathikhun Jaran; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 1 46, 1 (2007)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
32.
2006

Kurokawa Yasuyoshi; Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
Jpn. J. Appl. Phys., Part 2 45, L1064 (2006)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
33.
2006

Myong Seung Yeop; Lim Koeng Su; Konagai Makoto

Effect of hydrogen dilution on carrier transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys
Appl. Phys. Lett. 88, 103120 (2006)
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 Republic of Korea
34.
2006

Myong Seung Yeop; Kwon Seong Won; Lim Koeng Su; Kondo Michio; Konagai Makoto

Inclusion of nanosized silicon grains in hydrogenated protocrystalline silicon multilayers and its relation to stability
Appl. Phys. Lett. 88, 083118 (2006)
Department of Electrical Engineering and Computer Science, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
35.
2006

Miyajima Shinsuke; Haga Keisuke; Yamada Akira; Konagai Makoto

Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
Jpn. J. Appl. Phys., Part 2 45, L432 (2006)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan ;
36.
2006

Kambe Mika; Yamada Akira; Taneda Naoki; Fukawa Makoto; Miyajima Shinsuke; Kurokawa Yasuyoshi; Kobayashi Daisuke; Sato Kazuo; Konagai Makoto

TiO2-Coated Transparent Conductive Oxide (SnO;2;F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
Jpn. J. Appl. Phys., Part 2 45, L291 (2006)
37.
2005

Myong Seung Yeop; Miyajima Shinsuke; Lim Koeng Su; Shevaleevskiy Oleg; Konagai Makoto

Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys
J. Appl. Phys. 98, 054311 (2005)
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
38.
2004

Larina Liudmila; Kim Ki Hwan; Yoon Kyung Hoon; Konagai Makoto; Ahn Byung Tae

Growth and Characterization of an In-based Buffer Layer by CBD for Cu(In,Ga)Se2 Solar Cells
J. Electrochem. Soc. 151, C789 (2004)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea
39.
2004

Abe Katsuya; Yabe Chiaki; Watahiki Tatsuro; Yamada Akira; Konagai Makoto

Characterization and Device Application of Tensile‐Strained Si;1-;yCy Layers Grown by Gas‐Source Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 43, 3281 (2004)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
40.
2004

Ide Yoshinori; Saito Yuji; Yamada Akira; Konagai Makoto

2‐Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
Jpn. J. Appl. Phys., Part 1 43, 2419 (2004)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
41.
2004

Watahiki Tatsuro; Ishihara Hanae; Abe Katsuya; Yamada Akira; Konagai Makoto

Characterization and Comparison of Strained Si1-;yCy Metal Oxide Semiconductor Field‐Effect Transistor Grown by Gas‐Source Molecular Beam Epitaxy and Hot Wire Cell Method
Jpn. J. Appl. Phys., Part 1 43, 1882 (2004)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
42.
2004

Miyazaki Hisashi; Mikami Rui; Yamada Akira; Konagai Makoto

Efficiency Improvement of Cu(InGa)Se2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
Jpn. J. Appl. Phys., Part 1 43, 4244 (2004)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
43.
2004

Miyajima Shinsuke; Yamada Akira; Konagai Makoto

Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
Jpn. J. Appl. Phys., Part 2 43, L1190 (2004)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
44.
2003

Miyajima Shinsuke; Yamada Akira; Ide Yoshinori; Kim Mingyu; Konagai Makoto

Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
Jpn. J. Appl. Phys., Part 1 42, 3328 (2003)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1, O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
45.
2003

Ide Yoshinori; Asakusa Kouich; Yamada Akira; Konagai Makoto

Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells
Jpn. J. Appl. Phys., Part 1 42, 1521 (2003)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
46.
2003

Yagi Shuhei; Abe Katsuya; Yamada Akira; Konagai Makoto

C Stability in Si1-;yCy Epitaxial Films Grown by Low‐Temperature Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 1 42, 1499 (2003)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
47.
2003

Ahn Jun Yong; Jun Kyung Hoon; Lim Koeng Su; Konagai Makoto

Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime
Appl. Phys. Lett. 82, 1718 (2003)
Department of Electrical Engineering & Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea;
48.
2002

Tokita Yuuki; Chaisitsak Sutichai; Miyazaki Hisashi; Mikami Rui; Yamada Akira; Konagai Makoto

Novel In(OH);3;Zn2+; Buffer Layer for Cu(InGa)Se;2 Based Solar Cells
Jpn. J. Appl. Phys., Part 1 41, 7407 (2002)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
49.
2002

Zhao Ying; Miyajima Shinsuke; Ide Yoshinori; Yamada Akira; Konagai Makoto

Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2 with High Haze Factors
Jpn. J. Appl. Phys., Part 1 41, 6417 (2002)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1, O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
50.
2002

Amin Nowshad; Yamada Akira; Konagai Makoto

Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1‐μm‐Thick CdTe Thin Film Solar Cells
Jpn. J. Appl. Phys., Part 1 41, 2834 (2002)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
51.
2002

Yagi Shuhei; Yamada Akira; Yoneyama Yuichi; Okabayashi Takashi; Abe Katsuya; Konagai Makoto

Phosphorous Doping of Strain‐Induced Si;1-;yCy Epitaxial Films Grown by Low‐Temperature Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 1 41, 2472 (2002)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
52.
2002

Chaisitsak Sutichai; Yamada Akira; Konagai Makoto

Preferred Orientation Control of Cu(In;1-;xGax)Se;2 (;x ≈ 0.28) Thin Films and Its Influence on Solar Cell Characteristics
Jpn. J. Appl. Phys., Part 1 41, 507 (2002)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152‐8552, Japan;
53.
2001

Jahn U.; Okamoto T.; Yamada A.; Konagai M.

Doping and intermixing in CdS/CdTe solar cells fabricated under different conditions
J. Appl. Phys. 90, 2553 (2001)
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;
54.
2001

Abe Katsuya; Yagi Shuhei; Okabayashi Takashi; Yamada Akira; Konagai Makoto

Characterization of Tensile Strained Si1-y;Cy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
Jpn. J. Appl. Phys., Part 1 40, 4440 (2001)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
55.
2001

Matsuzaki Yuichi; Hasui Shigeki; Kamada Shin-ya; Yamada Akira; Konagai Makoto

Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
Jpn. J. Appl. Phys., Part 1 40, 4325 (2001)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
56.
2001

Okamoto Tamotsu; Kitamoto Shinji; Yamada Akira; Konagai Makoto

Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
Jpn. J. Appl. Phys., Part 1 40, 3089 (2001)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
57.
2001

Ohtsuka Tomohiko; Nakanishi Kazuyuki; Okamoto Tamotsu; Yamada Akira; Konagai Makoto; Jahn Uwe

Epitaxial Growth of γ-In;2Se3 Films by Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 40, 509 (2001)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
58.
2001

Dairiki Koji; Yamada Akira; Konagai Makoto

Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure
Jpn. J. Appl. Phys., Part 1 40, 486 (2001)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
59.
2000

Yagi Syuhei; Abe Katsuya; Yamada Akira; Konagai Makoto

Epitaxial Growth of Si1-;yCy Film by Low Temperature Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 2 39, L1078 (2000)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
60.
2000

Sugiyama Takeshi; Villegas Antonio; Godines Antonio; Kudriavtsev Yuriy; Konagai Makoto; Yamada Akira; Chaisitsak Sutichai; Asomoza Rene

Formation of pn Homojunction in Cu(InGa)Se2 Thin Film Solar Cells by Zn Doping
Jpn. J. Appl. Phys., Part 1 39, 4816 (2000)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
61.
2000

Ichikawa Mitsuru; Tsushima Takeshi; Yamada Akira; Konagai Makoto

Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
Jpn. J. Appl. Phys., Part 1 39, 4712 (2000)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
62.
2000

Shimizu Akira; Yamada Akira; Konagai Makoto

Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se2 Thin Film Solar Cells
Jpn. J. Appl. Phys., Part 1 39, 3447 (2000)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
63.
2000

Okamoto Tamotsu; Yamada Akira; Konagai Makoto

Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
Jpn. J. Appl. Phys., Part 1 39, 2587 (2000)
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
64.
2000

Chaisitsak Sutichai; Yamada Akira; Konagai Makoto; Saito Koki

Improvement in Performances of ZnO:B/i-ZnO/Cu(InGa)Se2 Solar Cells by Surface Treatments for Cu(InGa)Se2
Jpn. J. Appl. Phys., Part 1 39, 1660 (2000)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
65.
2000

Shimizu Akira; Yamada Akira; Konagai Makoto

Electrical and structural characterizations of Cu(InGa)Se2 thin films using electrochemical capacitance-voltage method and focused-ion beam process
Jpn. J. Appl. Phys., Part 1 39, 109 (2000)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
66.
1999

Chaisitsak Sutichai; Sugiyama Takeshi; Yamada Akira; Konagai Makoto

Cu(InGa)Se2 thin-film solar cells with high resistivity ZnO buffer layers deposited by atomic layer deposition
Jpn. J. Appl. Phys., Part 1 38, 4989 (1999)
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
67.
1999

Sang Baosheng; Yamada Akira; Dairiki Koji; Konagai Makoto

High-efficiency amorphous silicon solar cells with ZnO as front contact
Jpn. J. Appl. Phys., Part 1 38, 4983 (1999)
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-0033, Japan;
68.
1999

Amin Nowshad; Isaka Takayuki; Okamoto Tamotsu; Yamada Akira; Konagai Makoto

Prospects of thickness reduction of the CdTe layer in highly efficient CdTe solar cells towards 1 μm
Jpn. J. Appl. Phys., Part 1 38, 4666 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
69.
1999

Dairiki Koji; Yamada Akira; Konagai Makoto

Improvement of stabilized efficiency of amorphous silicon solar cell by SiH2Cl2 addition
Jpn. J. Appl. Phys., Part 1 38, 4007 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
70.
1999

Abe Katsuya; Watahiki Tatsuro; Yamada Akira; Konagai Makoto

Growth mechanism during silicon epitaxy by photochemical vapor deposition at low temperatures
Jpn. J. Appl. Phys., Part 1 38, 3622 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
71.
1999

Yamada Akira; Miyazono Nagako; Konagai Makoto

Structural analysis of SiGe and SiGeC alloys by ab initio total-energy calculations
Jpn. J. Appl. Phys., Part 1 38, 2566 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
72.
1999

Konagai Makoto

Material and processing issues in the Japanese thin film Si solar cell program
AIP Conf. Proc. 462, 73 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan;
73.
1999

Ohtsuka Tomohiko; Okamoto Tamotsu; Yamada Akira; Konagai Makoto

Molecular beam epitaxy and characterization of layered In2Se3 films grown on slightly misoriented (001)GaAs substrates
Jpn. J. Appl. Phys., Part 1 38, 668 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
74.
1999

Ichikawa Mitsuru; Takeshita Jun; Yamada Akira; Konagai Makoto

High deposition rate of polycrystalline silicon thin films prepared by hot wire cell method
Jpn. J. Appl. Phys., Part 2 38, L24 (1999)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
75.
1998

Budiman Maman; Yamada Akira; Okamoto Tamotsu; Konagai Makoto

Heteroepitaxy and multiquantum well structure of layered compound GaSe/GaSxSe1-x; on (001)GaAs substrate
Jpn. J. Appl. Phys., Part 1 37, 5497 (1998)
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
76.
1998

Sang Baosheng; Yamada Akira; Konagai Makoto

Highly stable ZnO thin films by atomic layer deposition
Jpn. J. Appl. Phys., Part 2 37, L1125 (1998)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
77.
1998

Budiman Maman; Yamada Akira; Konagai Makoto

Heteroepitaxy of layered compound InSe and InSe/GaSe onto GaAs substrates
Jpn. J. Appl. Phys., Part 1 37, 4092 (1998)
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
78.
1998

Okamoto Tamotsu; Matsuzaki Yuichi; Amin Nowshad; Yamada Akira; Konagai Makoto

Characterization of highly efficient CdTe thin film solar cells by low-temperature photoluminescence
Jpn. J. Appl. Phys., Part 1 37, 3894 (1998)
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
79.
1998

Ohtake Yasutoshi; Chaisitsak Sutichai; Yamada Akira; Konagai Makoto

Characterization of ZnInxSey thin films as a buffer layer for high efficiency Cu(InGa)Se2 thin-film solar cells
Jpn. J. Appl. Phys., Part 1 37, 3220 (1998)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
80.
1998

Shirakashi Jun-ichi; Matsumoto Kazuhiko; Miura Naruhisa; Konagai Makoto

298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel junctions by thermal oxidation
J. Appl. Phys. 83, 5567 (1998)
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan;
81.
1998

Shirakashi Jun-ichi; Matsumoto Kazuhiko; Miura Naruhisa; Konagai Makoto

Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature
Appl. Phys. Lett. 72, 1893 (1998)
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan;
82.
1998

Miura Naruhisa; Numaguchi Tetsuyuki; Yamada Akira; Konagai Makoto; Shirakashi Jun-ichi

Room temperature operation of amorphous carbon-based single-electron transistors fabricated by beam-induced deposition techniques
Jpn. J. Appl. Phys., Part 2 37, L423 (1998)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
83.
1998

Miura Naruhisa; Yamada Akira; Konagai Makoto

Fabrication of sub-micron gap structures using directly-deposited amorphous carbon wires
Jpn. J. Appl. Phys., Part 1 37, 2072 (1998)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
84.
1998

Shirakashi Jun-ichi; Miura Naruhisa; Matsumoto Kazuhiko; Konagai Makoto

Room temperature Nb-based single-electron transistors
Jpn. J. Appl. Phys., Part 1 37, 1594 (1998)
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan;
85.
1998

Abe Katsuya; Watahiki Tatsuro; Yamada Akira; Konagai Makoto

Characterization of hydrogen in epitaxial silicon films grown at very low temperatures
Jpn. J. Appl. Phys., Part 1 37, 1202 (1998)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-Okayama, Meguro-ku, Tokyo 152, Japan;
86.
1998

Sang Baosheng; Yamada Akira; Konagai Makoto

Textured ZnO thin films for solar cells grown by a two-step process with the atomic layer deposition technique
Jpn. J. Appl. Phys., Part 2 37, L206 (1998)
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
87.
1997

Miura Naruhisa; Numaguchi Tetsuyuki; Yamada Akira; Konagai Makoto; Shirakashi Jun-ichi

Single-Electron Tunneling through Amorphous Carbon Dots Array
Jpn. J. Appl. Phys., Part 2 36, L1619 (1997)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
88.
1997

Oshima Takayuki; Yamada Akira; Konagai Makoto

Analysis of H2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
Jpn. J. Appl. Phys., Part 1 36, 6481 (1997)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152, Japan
89.
1997

Oh Je-Hwan; Hayakawa Nobuhiro; Konagai Makoto

Carbon Diffusion Behavior in a GaAs Tunnel Junction with a Heavily Carbon Doped p⁺-Layer by Metalorganic Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 36, 6300 (1997)
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan;
90.
1997

Miura Naruhisa; Yamada Akira; Konagai Makoto

Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
Jpn. J. Appl. Phys., Part 2 36, L1275 (1997)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
91.
1997

Shirakashi Jun-ichi; Matsumoto Kazuhiko; Miura Naruhisa; Konagai Makoto

Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Jpn. J. Appl. Phys., Part 2 36, L1257 (1997)
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
92.
1997

Shirakashi Jun-ichi; Matsumoto Kazuhiko; Miura Naruhisa; Konagai Makoto

Nb/Nb Oxide-Based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Jpn. J. Appl. Phys., Part 2 36, L1120 (1997)
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
93.
1997

Miura Naruhisa; Ishii Hideaki; Yamada Akira; Konagai Makoto; Yamauchi Yasuyuki; Yamamoto Akio

Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Concentration at Very Low Temperature
Jpn. J. Appl. Phys., Part 2 36, L256 (1997)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
94.
1995

Qi Ming; Konagai Makoto; Takahashi Kiyoshi

Raman scattering from longitudinal‐optical phonon‐plasmon‐coupled mode in carbon‐doped ;p‐type InGaAs
J. Appl. Phys. 78, 7265 (1995)
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China;
95.
1995

Siamchai Pavan; Konagai Makoto

Degradation behavior of amorphous silicon solar cells fabricated by mercury‐sensitized photochemical vapor deposition with hydrogen dilution
Appl. Phys. Lett. 67, 3468 (1995)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2‐12‐1 Ohokayama, Meguro‐ku, Tokyo 152, Japan;
96.
1995

Oh Je-Hwan; Shirakashi Jun-ichi; Fukuchi Fumihiko; Konagai Makoto

Metalorganic molecular beam epitaxy of heavily carbon‐doped InP using tertiarybutylphosphine as a carbon auto‐doping source
Appl. Phys. Lett. 66, 2891 (1995)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152, Japan;
97.
1993

Takemura Yasushi; Kakuno Keiichi; Yamada Akira; Konagai Makoto

Lattice vibration in alternating monolayers of ZnSe and ZnTe
Appl. Phys. Lett. 63, 3176 (1993)
Division of Electrical and Computer Engineering, Yokohama National University, 156 Tokiwadai, Hodogaya‐ku, Yokohama 240, Japan;
98.
1993

Nozaki Shinji; Takahashi Kiyoshi; Shirahama Masanori; Nagao Keisuke; Shirakashi Junichi; Tokumitsu Eisuke; Konagai Makoto

Study on thermal stability of carbon‐doped GaAs using novel metalorganic molecular beam epitaxial structures
Appl. Phys. Lett. 62, 1913 (1993)
Department of Physical Electronics, Tokyo Institute of Technology, Meguro‐ku, Tokyo 152, Japan;
99.
1991

Wenas Wilson W.; Yamada Akira; Takahashi Kiyoshi; Yoshino Masahiro; Konagai Makoto

Electrical and optical properties of boron‐doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition
J. Appl. Phys. 70, 7119 (1991)
Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1, Ohokayama, Meguro‐ku, Tokyo 152, Japan;
100.
1991

Teraguchi Nobuaki; Kato Fuji; Konagai Makoto; Takahashi Kiyoshi; Nakamura Yoshio; Otsuka Nobuo

Vacancy ordering of Ga2Se3 films by molecular beam epitaxy
Appl. Phys. Lett. 59, 567 (1991)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2‐12‐1 Ohokayama, Meguro‐ku, Tokyo 152, Japan;
101.
1991

Usagawa T.; Kobayashi M.; Mishima T.; Rabinzohn P. D.; Ihara A.; Kawata M.; Yamada T.; Tokumitsu E.; Konagai M.; Takahashi K.

Extremely low non‐alloyed specific contact resistance ρ;c (10-8; Ω cm;2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (10;21 cm-3;) p++GaAs
J. Appl. Phys. 69, 8227 (1991)
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
102.
1991

Yamada A.; Tanda M.; Kato F.; Konagai M.; Takahashi K.

Gas source molecular‐beam epitaxy of Si and SiGe using Si;2H6 and GeH4
J. Appl. Phys. 69, 1008 (1991)
Department of Electrical and Electronic Engineering, Tokyo lnstitute of Technology, 2‐12‐1 O‐okayama, Meguro‐ku, Tokyo 152, Japan;
103.
1989

Dosho Shiro; Takemura Yasushi; Konagai Makoto; Takahashi Kiyoshi

Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe‐ZnTe strained‐layer superlattices
J. Appl. Phys. 66, 2597 (1989)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2‐12‐1 O‐okayma Meguro‐ku, Tokyo 152, Japan;
104.
1989

Yamada A.; Satoh A.; Konagai M.; Takahashi K.

Low‐temperature (600–650 °C) silicon epitaxy by excimer laser‐assisted chemical vapor deposition
J. Appl. Phys. 65, 4268 (1989)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2‐12‐1 Ohokayama, Meguro‐ku, Tokyo 152, Japan;
105.
1989

Tokumitsu Eisuke; Yamada Takumi; Konagai Makoto; Takahashi Kiyoshi

Photo‐metalorganic molecular‐beam epitaxy; A new epitaxial growth technique
J. Vac. Sci. Technol. A 7, 706 (1989)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, O‐okayama, Meguro‐ku, Tokyo 152, Japan;
106.
1988

Saito Koki; Tokumitsu Eisuke; Akatsuka Takeshi; Miyauchi Motoya; Yamada Takumi; Konagai Makoto; Takahashi Kiyoshi

Characterization of p‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
J. Appl. Phys. 64, 3975 (1988)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2‐12‐1 Ohokayama, Meguro‐ku, Tokyo 152, Japan;
107.
1988

Yamada A.; Satoh A.; Konagai M.; Takahashi K.

Low temperature silicon epitaxy by photo‐ and plasma‐CVD
AIP Conf. Proc. 167, 222 (1988)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2‐12‐1, Ohokayama, Meguro‐ku, Tokyo 152, Japan;
108.
1987

Kobayashi Masakazu; Dosho Shiro; Imai Akira; Kimura Ryuhei; Konagai Makoto; Takahashi Kiyoshi

Realization of both p‐ and ;n‐type conduction for ZnSe‐ZnTe strained‐layer superlattices
Appl. Phys. Lett. 51, 1602 (1987)
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ohokayama Meguro‐ku, Tokyo 152, Japan;

Co-authors

Co-publications
77

Yamada, Akira
24

Miyajima, Shinsuke
7

Abe, Katsuya
6

Watahiki, Tatsuro
6

Chaisitsak, Sutichai
6

Myong, Seung Yeop
5

Okamoto, Tamotsu
4

Sato, Takehiko
4

Ide, Yoshinori
4

Lim, Koeng Su
4

Yunaz, Ihsanul Afdi
4

Sriprapha, Kobsak
3

Sugiura, Tsutomu
3

Limmanee, Amornrat
3

Sritharathikhun, Jaran