Computed
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Molecular, atomic, ion, and c...
Thin film structure and morph...
Chemical vapor deposition
Nucleation and growth
X-ray effects
Photochemistry
Ultraviolet, visible, and inf...
Processes caused by visible a...
Photon- and electron-stimulat...
Solid-solid transitions
Surface and interface chemist...
Processes caused by infrared ...
Other heat and thermomechanic...
Deposition by sputtering
Structure of clean surfaces
Elemental semiconductors
Adsorption kinetics
Chemisorption/physisorption: ...
Semiconductor surfaces
1.
Akazawa Housei
Transparent Conductive Properties of TiOx and Nb-Doped TiOx Films Produced by Reactive Co-Sputtering from Ti and Nb2O5 Targets
2.
Correlation between Adhesive Strength and the Oxidized and Reduced States of Pt Films Electron Cyclotron Resonance Plasma Sputtered on SiO2
3.
Modification of transparent conductive ZnO and Ga-doped ZnO films by irradiation with electron cyclotron resonance argon plasma
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4.
Akazawa Housei; Ando Hiroshi
X-ray photoelectron spectroscopy characterization of fluorite and perovskite phases in Sr1-xBi2+yTa2O9-z films
5.
Transparent Conductor: TiOxNy
6.
Real-time spectroellipsometric characterization of nucleation, islanding, and coalescence behavior of boron films grown by soft x-ray excited chemical vapor deposition
7.
Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources
8.
Real-time ellipsometric modeling and characterization of the evolution of nanometer-scale Ge islands and pits in Ge homoepitaxy
9.
Argon Plasma Treatment of Transparent Conductive ZnO Films
10.
Selective formation of competitive c-axis and a-axis oriented LiNbO3 epitaxial films on Al2O3(1120)
11.
Germanium Negative Islands Self-Organized in Homoepitaxy
12.
Akazawa Housei; Shimada Masaru
Specific mechanism for strain relaxation dependent on crystallization route of LiNbO3 films on Al2O3(0001)
13.
Observation of Both Potential Barrier-type and Filament-type Resistance Switching with Sputtered LiNbO3 Thin Films
14.
Birefringence and Optical Waveguiding Losses in Preferentially $c$-Axis Oriented LiNbO3 Thin Films on SiO2 Produced by Electron Cyclotron Resonance Plasma Sputtering
15.
Akazawa H.; Shimada M.
Factors driving c-axis orientation and disorientation of LiNbO3 thin films deposited on TiN and indium tin oxide by electron cyclotron resonance plasma sputtering
16.
Hydrogen induced roughening and smoothing in surface morphology during synchrotron-radiation-excited GeH4-source homoepitaxy on Ge(001)
17.
Spectroellipsometric approach to determine linear electro-optic coefficient of c-axis-oriented LiNbO3 thin films
18.
Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing
19.
Intermediate crystalline states produced by isothermal annealing of sputter-deposited a‐;Si films
20.
Electron cyclotron resonance plasma sputtering growth of textured films of c-axis-oriented LiNbO3 on Si(100) and Si(111) surfaces
21.
Short-period SinGem strained-layer superlattices grown from gas sources by synchrotron-radiation-excited chemical-beam epitaxy
22.
Self-limiting size control of hemispherical grains of microcrystalline Si self-assembled on an amorphous Si film surface
23.
Real-time spectro-ellipsometric characterization of Si/Si1-x;Gex multiple quantum wells grown on Si(100) substrates
24.
Large changes in refractive index by synchrotron-radiation-driven compaction of hydrogenated silicon nitride films
25.
Morphological transition of Si1-x;Gex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition; From two-dimensional growth to growth in the Volmer–Weber mode
26.
Morphological transitions of Si1-x;Gex films growing on Si(100). I. Gas-source molecular-beam epitaxy; From two-dimensional growth to growth in the Stranski–Krastanov mode
27.
Contribution of dangling-bond regeneration channels in the synchrotron-radiation-excited epitaxy of Si from SiH2Cl2
28.
Formation of Si–Si bonds and precipitation of Si nanocrystals in vacuum-ultraviolet-irradiated ;a-SiO2 films
29.
Formation of a transient Si hydride multilayer and recrystallization of a Si-Si network during vacuum-ultraviolet-excited Si homoepitaxy from Si2H6
30.
Soft x-ray-stimulated positive ion desorption from amorphous SiO2 surfaces
31.
Akazawa H.; Takahashi J.
High-performance beamline for vacuum-ultraviolet-excited material processing
32.
Threshold behavior in synchrotron-radiation-stimulated recrystallization during Si homoepitaxy on Si(100)
33.
Bistable Si growth conditions on Ge(100) in synchrotron-radiation-excited atomic layer epitaxy from SiH2Cl2
34.
Characterization of self‐limiting SiH;2Cl2 chemisorption and photon‐stimulated desorption as elementary steps for Si atomic‐layer epitaxy
35.
Synchrotron‐radiation‐excited epitaxy of Ge with GeH;4
36.
Akazawa Housei; Utsumi Yuichi
Photon‐stimulated desorption and photolysis of decaborane (B;10H14) at semiconductor surfaces
37.
Utsumi Yuichi; Akazawa Housei
Synchrotron‐radiation‐induced photodoping using disilane molecular‐beam epitaxy; Low‐temperature high doping of B
38.
Synchrotron‐radiation‐stimulated evaporation and defect formation in ;a‐SiO;2
39.
Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. II. Photochemical‐vapor deposition
40.
Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. I. Atomic layer epitaxy
41.
Effects of synchrotron radiation irradiation on selective Si epitaxial growth by disilane molecular beam epitaxy
42.
High‐resolution time‐of‐flight mass‐spectroscopy study of synchrotron‐radiation‐induced chemical reactions on Si(100)
43.
Origin of perfect selectivity of Si epitaxial growth through disilane molecular‐beam epitaxy using synchrotron radiation
44.
Akazawa H.; Nagase M.; Utsumi Y.
Gas and adsorbate excitation pathways in synchrotron radiation excited Si growth using disilane
45.
Akazawa Housei; Urisu Tsuneo; Utsumi Yuichi; Nagase Masao
Si crystal growth mediated by synchrotron‐radiation‐stimulated hydrogen desorption
46.
Utsumi Yuichi; Akazawa Housei; Nagase Masao; Urisu Tsuneo; Kawashima Izumi
Perfectly selective Si epitaxial growth due to synchrotron radiation irradiation during disilane molecular beam epitaxy
47.
Akazawa H.; Takahashi J.; Utsumi Y.; Kawashima I.; Urisu T.
Role of hydrogen in synchrotron‐radiation‐stimulated evaporation of amorphous SiO;2 and microcrystalline Si
48.
Photostimulated evaporation of SiO2 and Si3N4 films by synchrotron radiation and its application for low‐temperature cleaning of Si surfaces
49.
Takahashi Jun-ichi; Utsumi Yuichi; Akazawa Housei; Kawashima Izumi; Urisu Tsuneo
Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system
50.
Akazawa H.; Utsumi Y.; Takahashi J.; Urisu T.
Photostimulated evaporation of SiO2 films by synchrotron radiation
51.
Akazawa Housei; Murata Yoshitada
Interaction of reactive ions with Pt(100). II. Dissociative scattering of molecular ions near the threshold energy region
52.
Interaction of reactive ions with Pt(100). I. Neutralization and surface trapping
53.
Akazawa H.; Murata Y.
Neutralization of noble‐gas ions at very low energies
54.
Neutralization of very‐low‐energy ions on Pt(100)
55.
Resonance‐like phenomena in activated dissociative adsorption; N;+2 on Ni(100) and Ni(111)
9
Utsumi, Yuichi
6
Urisu, Tsuneo
5
Shimada, Masaru
Murata, Yoshitada
3
Nagase, Masao