Computed
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Surface treatments
Photochemistry
III-V semiconductors
Surface and interface chemist...
Ceramics and refractories
Oxidation
Surface cleaning, etching, pa...
Other electron-impact emissio...
III-V and II-VI semiconductors
Superconducting materials
Josephson devices
Chemical reactions
Direct observation of disloca...
Electron states at surfaces a...
Defects and impurities: dopin...
Surface states, band structur...
Structure of clean surfaces
Chemical vapor deposition
1.
Peake G. M.; Shul R. J.; Ashby C. I. H.; Cederberg J. G.; Hafich M. J.; Biefeld R. M.; Palmisiano M. N.
Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics
2.
Follstaedt D. M.; Provencio P. P.; Missert N. A.; Mitchell C. C.; Koleske D. D.; Allerman A. A.; Ashby C. I. H.
Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN
3.
Ashby Carol I. H.; Mitchell Christine C.; Han Jung; Missert Nancy A.; Provencio Paula P.; Follstaedt David M.; Peake Gregory M.; Griego Leonardo
Low-dislocation-density GaN from a single growth on a textured substrate
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4.
Ashby Carol I. H.; Zavadil Kevin R.; Baca Albert G.; Chang P.-C.; Hammons B. E.; Hafich M. J.
Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
5.
Ashby Carol I. H.; Bridges Monica M.; Allerman Andrew A.; Hammons B. E.; Hou Hong Q.
Origin of the time dependence of wet oxidation of AlGaAs
6.
Ashby Carol I. H.; Sullivan John P.; Choquette Kent D.; Geib K. M.; Hou Hong Q.
Wet oxidation of AlGaAs: the role of hydrogen
7.
Blum O.; Ashby C. I. H.; Hou H. Q.
Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements
8.
Ashby Carol I. H.; Sullivan John P.; Newcomer Paula P.; Missert Nancy A.; Hou Hong Q.; Hammons B. E.; Hafich Michael J.; Baca Albert G.
Wet oxidation of AlxGa1-x;As; Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications
9.
Blum O.; Geib K. M.; Hafich M. J.; Klem J. F.; Ashby C. I. H.
Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications
10.
Vawter G. Allen; Ashby Carol I. H.
Reactive‐ion‐beam etching of InP in a chlorine–hydrogen mixture
11.
Howard A. J.; Ashby C. I. H.; Lott J. A.; Schneider R. P.; Corless R. F.
Electrochemical sulfur passivation of visible (∼670 nm) AlGaInP lasers
12.
Zavadil Kevin R.; Howard Arnold J.; Ashby Carol I. H.; Hammons B. E.
Ultraviolet photosulfidation of III–V compound semiconductors for electronic passivation
13.
Ashby Carol I. H.; Sullivan Charles T.; Vawter G. Allen; Hohimer John P.; Hadley G. Ronald; Neal Daniel R.
Metal-ion spin-on glasses: novel materials for active waveguides
14.
Ashby Carol I. H.; Zavadil Kevin R.; Howard Arnold J.; Hammons B. E. (Gene)
Ultraviolet photosulfidation of III‐V compound semiconductors; A new approach to surface passivation
15.
Ginley D. S.; Barr L.; Ashby C. I. H.; Plut T. A.; Urea D.; Siegal M. P.; Martens J. S.; Johansson M. E.
Di‐ and tri‐carboxylic‐acid‐based etches for processing high temperature superconducting thin films and related materials
16.
Ginley D. S.; Ashby C. I. H.; Plut T. A.; Urea D.; Siegal M. P.; Martens J. S.
Di‐ and Tricarboxylic‐acid‐based etches for processing high temperature superconducting thin films
17.
Martens J. S.; Wendt J. R.; Hietala V. M.; Ginley D. S.; Ashby C. I. H.; Plut T. A.; Vawter G. A.; Tigges C. P.; Siegal M. P.; Hou S. Y.; Phillips Julia M.; Hohenwarter G. K. G.
High temperature superconducting Josephson transmission lines for pulse and step sharpening
18.
Wendt J. R.; Martens J. S.; Ashby C. I. H.; Plut T. A.; Hietala V. M.; Tigges C. P.; Ginley D. S.; Siegal M. P.; Phillips J. M.; Hohenwarter G. K. G.
YBa2Cu3O7 nanobridges fabricated by direct‐write electron beam lithography
19.
Ashby Carol I. H.
Laser chemical etching of semiconductors
20.
Ashby Carol I. H.; Martens Jon; Plut Thomas A.; Ginley David S.; Phillips Julia M.
Improved aqueous etchant for high Tc superconductor materials
21.
Ashby C. I. H.; Myers D. R.; Vawter G. A.; Biefeld R. M.; Datye A. K.
Selective suppression of photochemical dry etching using elevated surface impurity concentrations: A new technique for self‐aligned etching
22.
Ashby C. I. H.; Myers D. R.; Vawter G. A.; Biefeld R. M.
Carrier‐lifetime control of photochemical dry etching using elevated impurity concentrations
23.
Ashby C. I. H.; Biefeld R. M.
Carrier‐Driven Photochemical Dry Etching of Indirect ;III‐V; Compound Semiconductors
24.
Ashby C. I. H.; Myers D. R.; Vook F. L.
Selective Ion Bombardment for the Control of Laser‐Induced Photochemical Dry Etching of Semiconductors
25.
Ashby C. I. H.; Arnold G. W.; Brannon P. J.
Ion‐bombardment‐enhanced etching of LiNbO;3 using damage profile tailoring
26.
Laser‐induced etching
27.
Ashby C. I. H.; Brannon P. J.
Laser‐driven chemical reaction for etching LiNbO;3
28.
Ashby C. I. H.
Summary Abstract: The role of surface electronic properties in selective photochemical dry etching
29.
Composition‐selective photochemical etching of compound semiconductors
30.
Doping level selective photochemical dry etching of GaAs
31.
Brice D. K.; Ashby C. I. H.
Electron bombardment enhancement of the reactivity of graphite with atomic hydrogen: Threshold‐like effects
32.
Photochemical dry etching of GaAs
33.
Summary Abstract: The origin of electron bombardment enhanced reactivity of graphite with hydrogen
34.
Electronic excitation in electron bombardment enhancement of chemical reactions
35.
Summary Abstract: Photoenhancement of the reaction of graphite with atomic hydrogen by ultraviolet radiation
5
Biefeld, RM
Vawter, G. Allen
Ginley, David
4
Siegal, Michael P.
Hammons, BE
3
Zavadil, Kevin R.
2
Follstaedt, David M.
Hafich, MJ
Geib, Kent
Allerman, Andrew A.
Baca, Albert G.
Tigges, Chris P.
Wendt, Joel R.
Mitchell, Christine C.
Missert, Nancy A.