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Rastelli, Armando

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Research Profile

Latest Publications

1.
2012

Intonti Francesca; Caselli Niccolò; Vignolini Silvia; Riboli Francesco; Kumar Santosh; Rastelli Armando; Schmidt Oliver G.; Francardi Marco; Gerardino Annamaria; Balet Laurent; Li Lianhe H.; Fiore Andrea; Gurioli Massimo

Mode tuning of photonic crystal nanocavities by photoinduced non-thermal oxidation
Appl. Phys. Lett. 100, 033116 (2012)
LENS and Department of Physics, University of Florence, Via Sansone 1, 50019 Sesto Fiorentino, Italy
2.
2011

Jöns K. D.; Hafenbrak R.; Singh R.; Ding F.; Plumhof J. D.; Rastelli A.; Schmidt O. G.; Bester G.; Michler P.

Dependence of the Redshifted and Blueshifted Photoluminescence Spectra of Single InxGa1-xAs/GaAs Quantum Dots on the Applied Uniaxial Stress
Phys. Rev. Lett. 107, 217402 (2011)
Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
3.
2011

Kumar S.; Trotta R.; Zallo E.; Plumhof J. D.; Atkinson P.; Rastelli A.; Schmidt O. G.

Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines
Appl. Phys. Lett. 99, 161118 (2011)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

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All Publications

1.
2012

Intonti Francesca; Caselli Niccolò; Vignolini Silvia; Riboli Francesco; Kumar Santosh; Rastelli Armando; Schmidt Oliver G.; Francardi Marco; Gerardino Annamaria; Balet Laurent; Li Lianhe H.; Fiore Andrea; Gurioli Massimo

Mode tuning of photonic crystal nanocavities by photoinduced non-thermal oxidation
Appl. Phys. Lett. 100, 033116 (2012)
LENS and Department of Physics, University of Florence, Via Sansone 1, 50019 Sesto Fiorentino, Italy
2.
2011

Jöns K. D.; Hafenbrak R.; Singh R.; Ding F.; Plumhof J. D.; Rastelli A.; Schmidt O. G.; Bester G.; Michler P.

Dependence of the Redshifted and Blueshifted Photoluminescence Spectra of Single InxGa1-xAs/GaAs Quantum Dots on the Applied Uniaxial Stress
Phys. Rev. Lett. 107, 217402 (2011)
Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
3.
2011

Kumar S.; Trotta R.; Zallo E.; Plumhof J. D.; Atkinson P.; Rastelli A.; Schmidt O. G.

Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines
Appl. Phys. Lett. 99, 161118 (2011)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
4.
2011

Nika D. L.; Pokatilov E. P.; Balandin A. A.; Fomin V. M.; Rastelli A.; Schmidt O. G.

Reduction of lattice thermal conductivity in one-dimensional quantum-dot superlattices due to phonon filtering
Phys. Rev. B 84, 165415 (2011)
Laboratory PMSMM, Department of Theoretical Physics, Moldova State University, Chisinau, MD-2009, Republic of Moldova
5.
2011

Boioli F.; Zinovyev V. A.; Gatti R.; Marzegalli A.; Montalenti F.; Stoffel M.; Merdzhanova T.; Wang L.; Pezzoli F.; Rastelli A.; Schmidt O. G.; Miglio Leo

Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001)
J. Appl. Phys. 110, 044310 (2011)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
6.
2011

Intonti Francesca; Matarazzo Vitantonio; Nasir Ateeq; Makarovsky Oleg; Campion Richard; Patanè Amalia; Kumar Santosh; Rastelli Armando; Schmidt Oliver G.; Gurioli Massimo

Nano-sized light emitting diodes by near field laser exposure
Appl. Phys. Lett. 98, 183102 (2011)
Department of Physics and LENS, University of Florence, Via Sansone 1, 50019 Sesto Fiorentino, Italy
7.
2011

Plumhof J. D.; Křápek V.; Ding F.; Jöns K. D.; Hafenbrak R.; Klenovský P.; Herklotz A.; Dörr K.; Michler P.; Rastelli A.; Schmidt O. G.

Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
Phys. Rev. B 83, 121302 (2011)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
8.
2011

Kiravittaya S.; Lee H. S.; Balet L.; Li L. H.; Francardi M.; Gerardino A.; Fiore A.; Rastelli A.; Schmidt O. G.

Tuning optical modes in slab photonic crystal by atomic layer deposition and laser-assisted oxidation
J. Appl. Phys. 109, 053115 (2011)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
9.
2010

Zhang Jianjun; Rastelli Armando; Schmidt Oliver G.; Bauer Günther

Compositional evolution of SiGe islands on patterned Si (001) substrates
Appl. Phys. Lett. 97, 203103 (2010)
Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz, Austria
10.
2010

Herklotz Andreas; Plumhof Johannes D.; Rastelli Armando; Schmidt Oliver G.; Schultz Ludwig; Dörr Kathrin

Electrical characterization of PMN–28%PT(001) crystals used as thin-film substrates
J. Appl. Phys. 108, 094101 (2010)
Institute for Metallic Materials, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
11.
2010

Rezaev R. O.; Kiravittaya S.; Fomin V. M.; Rastelli A.; Schmidt O. G.

Engineering self-assembled SiGe islands for robust electron confinement in Si
Phys. Rev. B 82, 153306 (2010)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
12.
2010

Zhang J. J.; Montalenti F.; Rastelli A.; Hrauda N.; Scopece D.; Groiss H.; Stangl J.; Pezzoli F.; Schäffler F.; Schmidt O. G.; Miglio L.; Bauer G.

Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing
Phys. Rev. Lett. 105, 166102 (2010)
Institut für Halbleiter-und Festkörperphysik, Universität Linz, A-4040 Linz, Austria
13.
2010

Akopian N.; Perinetti U.; Wang L.; Rastelli A.; Schmidt O. G.; Zwiller V.

Tuning single GaAs quantum dots in resonance with a rubidium vapor
Appl. Phys. Lett. 97, 082103 (2010)
Quantum Transport, Kavli Institute of Nanoscience, TU Delft, 2628CJ Delft, The Netherlands
14.
2010

Ding F.; Akopian N.; Li B.; Perinetti U.; Govorov A.; Peeters F. M.; Bof Bufon C. C.; Deneke C.; Chen Y. H.; Rastelli A.; Schmidt O. G.; Zwiller V.

Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings
Phys. Rev. B 82, 075309 (2010)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
15.
2010

Hermannstädter C.; Beirne G. J.; Witzany M.; Heldmaier M.; Peng J.; Bester G.; Wang L.; Rastelli A.; Schmidt O. G.; Michler P.

Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules
Phys. Rev. B 82, 085309 (2010)
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
16.
2010

Peng J.; Hermannstädter C.; Witzany M.; Heldmaier M.; Wang L.; Kiravittaya S.; Rastelli A.; Schmidt O. G.; Michler P.; Bester G.

Heterogeneous confinement in laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric fields
Phys. Rev. B 81, 205315 (2010)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
17.
2010

Lutz T.; Suzuki T.; Costantini G.; Wang L.; Kiravittaya S.; Rastelli A.; Schmidt O. G.; Kern K.

Reversing the shape transition of InAs/GaAs (001) quantum dots by etching-induced lateral In segregation
Phys. Rev. B 81, 205414 (2010)
Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
18.
2010

Zhang J. J.; Hrauda N.; Groiss H.; Rastelli A.; Stangl J.; Schäffler F.; Schmidt O. G.; Bauer G.

Strain engineering in Si via closely stacked, site-controlled SiGe islands
Appl. Phys. Lett. 96, 193101 (2010)
Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz, Austria
19.
2010

Potfajova J.; Schmidt B.; Helm M.; Gemming T.; Benyoucef M.; Rastelli A.; Schmidt O. G.

Microcavity enhanced silicon light emitting pn-diode
Appl. Phys. Lett. 96, 151113 (2010)
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
20.
2010

Lipps F.; Pezzoli F.; Stoffel M.; Deneke C.; Thomas J.; Rastelli A.; Kataev V.; Schmidt O. G.; Büchner B.

Electron spin resonance study of Si/SiGe quantum dots
Phys. Rev. B 81, 125312 (2010)
Leibniz Institute for Solid State and Materials Research, IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
21.
2010

Plumhof J. D.; Křápek V.; Wang L.; Schliwa A.; Bimberg D.; Rastelli A.; Schmidt O. G.

Experimental investigation and modeling of the fine structure splitting of neutral excitons in strain-free GaAs/AlxGa1-xAs quantum dots
Phys. Rev. B 81, 121309 (2010)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
22.
2010

Ding F.; Singh R.; Plumhof J. D.; Zander T.; Křápek V.; Chen Y. H.; Benyoucef M.; Zwiller V.; Dörr K.; Bester G.; Rastelli A.; Schmidt O. G.

Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress
Phys. Rev. Lett. 104, 067405 (2010)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
23.
2009

Benyoucef M.; Wang L.; Rastelli A.; Schmidt O. G.

Toward quantum interference of photons from independent quantum dots
Appl. Phys. Lett. 95, 261908 (2009)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
24.
2009

Lee H. S.; Kiravittaya S.; Kumar S.; Plumhof J. D.; Balet L.; Li L. H.; Francardi M.; Gerardino A.; Fiore A.; Rastelli A.; Schmidt O. G.

Local tuning of photonic crystal nanocavity modes by laser-assisted oxidation
Appl. Phys. Lett. 95, 191109 (2009)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
25.
2009

Zhang J. J.; Rastelli A.; Groiss H.; Tersoff J.; Schäffler F.; Schmidt O. G.; Bauer G.

Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing
Appl. Phys. Lett. 95, 183102 (2009)
Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz, Austria
26.
2009

Wang Lijuan; Rastelli Armando; Bimberg Dieter; Schliwa Andrei; Horton Felicity; Ding Fei; Křápek Vlastimil; Schmidt Oliver G.

Self-assembled quantum dots with tunable thickness of the wetting layer: Role of vertical confinement on interlevel spacing
Phys. Rev. B 80, 085309 (2009)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
27.
2009

Bolaños Quiñones Vladimir A.; Huang Gaoshan; Plumhof Johannes D.; Kiravittaya Suwit; Rastelli Armando; Mei Yongfeng; Schmidt Oliver G.

Optical resonance tuning and polarization of thin-walled tubular microcavities
Opt. Lett. 34, 2345 (2009)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
28.
2009

Stoffel M.; Malachias A.; Rastelli A.; Metzger T. H.; Schmidt O. G.

Composition and strain in SiGe/Si(001) “nanorings” revealed by combined x-ray and selective wet chemical etching methods
Appl. Phys. Lett. 94, 253114 (2009)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
29.
2009

Hermannstädter C.; Witzany M.; Beirne G. J.; Schulz W.-M.; Eichfelder M.; Rossbach R.; Jetter M.; Michler P.; Wang L.; Rastelli A.; Schmidt O. G.

Polarization fine structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar microcavity
J. Appl. Phys. 105, 122408 (2009)
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
30.
2009

Lee H. S.; Rastelli A.; Kiravittaya S.; Atkinson P.; Bof Bufon C. C.; Mönch I.; Schmidt O. G.

Selective area wavelength tuning of InAs/GaAs quantum dots obtained by TiO2 and SiO2 layer patterning
Appl. Phys. Lett. 94, 161906 (2009)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
31.
2009

Huang G. S.; Kiravittaya S.; Bolaños Quiñones V. A.; Ding F.; Benyoucef M.; Rastelli A.; Mei Y. F.; Schmidt O. G.

Optical properties of rolled-up tubular microcavities from shaped nanomembranes
Appl. Phys. Lett. 94, 141901 (2009)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
32.
2009

Bonera E.; Pezzoli F.; Picco A.; Vastola G.; Stoffel M.; Grilli E.; Guzzi M.; Rastelli A.; Schmidt O. G.; Miglio L.

Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations
Phys. Rev. B 79, 075321 (2009)
Dipartimento di Scienza dei Materiali, and L-NESS, Università degli Studi di Milano-Bicocca, via Cozzi 53, I-20125 Milano, Italy;
33.
2008

Atkinson P.; Kiravittaya S.; Benyoucef M.; Rastelli A.; Schmidt O. G.

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates
Appl. Phys. Lett. 93, 101908 (2008)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, ;Germany
34.
2008

Bernardi A.; Kiravittaya S.; Rastelli A.; Songmuang R.; Thurmer D. J.; Benyoucef M.; Schmidt O. G.

On-chip Si/SiOx microtube refractometer
Appl. Phys. Lett. 93, 094106 (2008)
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
35.
2008

Katsaros G.; Tersoff J.; Stoffel M.; Rastelli A.; Acosta-Diaz P.; Kar G. S.; Costantini G.; Schmidt O. G.; Kern K.

Positioning of Strained Islands by Interaction with Surface Nanogrooves
Phys. Rev. Lett. 101, 096103 (2008)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
36.
2008

Mendach S.; Kiravittaya S.; Rastelli A.; Benyoucef M.; Songmuang R.; Schmidt O. G.

Bidirectional wavelength tuning of individual semiconductor quantum dots in a flexible rolled-up microtube
Phys. Rev. B 78, 035317 (2008)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany;
37.
2008

Benyoucef M.; Rastelli A.; Mei Y. F.; Kiravittaya S.; Schmidt O. G.

Strongly coupled semiconductor microcavities: A route to couple artificial atoms over micrometric distances
Phys. Rev. B 77, 035108 (2008)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
38.
2007

Marzegalli A.; Zinovyev V. A.; Montalenti F.; Rastelli A.; Stoffel M.; Merdzhanova T.; Schmidt O. G.; Miglio Leo

Critical Shape and Size for Dislocation Nucleation in Si1-xGex Islands on Si(001)
Phys. Rev. Lett. 99, 235505 (2007)
L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 53, I-20125 Milano, Italy;
39.
2007

Zhang J. J.; Stoffel M.; Rastelli A.; Schmidt O. G.; Jovanović V.; Nanver L. K.; Bauer G.

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening
Appl. Phys. Lett. 91, 173115 (2007)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany;
40.
2007

Vogel M. M.; Ulrich S. M.; Hafenbrak R.; Michler P.; Wang L.; Rastelli A.; Schmidt O. G.

Influence of lateral electric fields on multiexcitonic transitions and fine structure of single quantum dots
Appl. Phys. Lett. 91, 051904 (2007)
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany;
41.
2007

Katsaros G.; Stoffel M.; Rastelli A.; Schmidt O. G.; Kern K.; Tersoff J.

Three-dimensional isocompositional profiles of buried SiGe/;Si(001) islands
Appl. Phys. Lett. 91, 013112 (2007)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;
42.
2007

Ding Fei; Wang Lijuan; Kiravittaya Suwit; Müller Elisabeth; Rastelli Armando; Schmidt Oliver G.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings
Appl. Phys. Lett. 90, 173104 (2007)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany and Key Laboratory of Semiconductor Materials, The Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
43.
2007

Hermannstädter C.; Beirne G. J.; Wang L.; Rastelli A.; Schmidt O. G.; Michler P.

Time‐Resolved Optical Spectroscopy of Tunnel Coupled Lateral Quantum Dot Molecules
AIP Conf. Proc. 893, 875 (2007)
Institut für Strahlenphysik, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany;
44.
2007

Benyoucef M.; Rastelli A.; Schmidt O. G.

Comparable Homogeneous and Inhomogeneous Quantum Dot Luminescence Linewidths at Room Temperature
AIP Conf. Proc. 893, 761 (2007)
Max‐Planck‐Institut für Festkörperforschung, Heisenbergstr. 1, D‐70569 Stuttgart, Germany;
45.
2007

Mendach S.; Songmuang R.; Benyoucef M.; Rastelli A.; Schmidt O. G.

Quantum dots in a tube as light emitters, waveguides and ring resonators
AIP Conf. Proc. 893, 1149 (2007)
Max‐Planck‐Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D‐70569 Stuttgart, Germany;
46.
2007

Stoffel M.; Rastelli A.; Stangl J.; Merdzhanova T.; Bauer G.; Schmidt O. G.

Shape oscillations: A walk through the phase diagram of strained islands
Phys. Rev. B 75, 113307 (2007)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany;
47.
2007

Robinson J. T.; Walko D. A.; Arms D. A.; Tinberg D. S.; Evans P. G.; Cao Y.; Liddle J. A.; Schmidt O. G.; Rastelli A.; Dubon O. D.

Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods
Phys. Rev. Lett. 98, 106102 (2007)
Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
48.
2007

Songmuang R.; Rastelli A.; Mendach S.; Schmidt O. G.

SiOx/;Si radial superlattices and microtube optical ring resonators
Appl. Phys. Lett. 90, 091905 (2007)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;
49.
2007

Rastelli A.; Ulhaq A.; Kiravittaya S.; Wang L.; Zrenner A.; Schmidt O. G.

In situ laser microprocessing of single self-assembled quantum dots and optical microcavities
Appl. Phys. Lett. 90, 073120 (2007)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;
50.
2006

Katsaros G.; Rastelli A.; Stoffel M.; Costantini G.; Schmidt O. G.; Kern K.; Tersoff J.; Müller E.; von Känel H.

Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
Appl. Phys. Lett. 89, 253105 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;
51.
2006

Kiravittaya S.; Benyoucef M.; Zapf-Gottwick R.; Rastelli A.; Schmidt O. G.

Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting
Appl. Phys. Lett. 89, 233102 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany;
52.
2006

Stoffel M.; Rastelli A.; Tersoff J.; Merdzhanova T.; Schmidt O. G.

Local equilibrium and global relaxation of strained SiGe/;Si(001) layers
Phys. Rev. B 74, 155326 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart-Germany;
53.
2006

Wang L.; Rastelli A.; Schmidt O. G.

Structural and optical properties of In(Ga)As/;GaAs quantum dots treated by partial capping and annealing
J. Appl. Phys. 100, 064313 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
54.
2006

Ratto Fulvio; Costantini Giovanni; Rastelli Armando; Schmidt Oliver; Kern Klaus; Rosei Federico

Alloying of self-organized semiconductor 3D islands
Journal of Experimental Nanoscience 1, 279 (2006)
Institut National de la Recherche Scientifique, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes (QC), Canada
55.
2006

Costantini G.; Rastelli A.; Manzano C.; Acosta-Diaz P.; Songmuang R.; Katsaros G.; Schmidt O. G.; Kern K.

Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs(001) Quantum Dots
Phys. Rev. Lett. 96, 226106 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
56.
2006

Merdzhanova T.; Kiravittaya S.; Rastelli A.; Stoffel M.; Denker U.; Schmidt O. G.

Dendrochronology of Strain-Relaxed Islands
Phys. Rev. Lett. 96, 226103 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
57.
2006

Kratzer P.; Liu Q. K. K.; Acosta-Diaz P.; Manzano C.; Costantini G.; Songmuang R.; Rastelli A.; Schmidt O. G.; Kern K.

Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment
Phys. Rev. B 73, 205347 (2006)
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, Germany;
58.
2006

Sidor Y.; Rastelli A.; Moshchalkov V. V.; Hayne M.; Schildermans N.; Peeters F. M.; Partoens B.; Schmidt O. G.

High-field magnetoexcitons in unstrained GaAs/;AlxGa1-x;As quantum dots
Phys. Rev. B 73, 155334 (2006)
Departement Fysica, Universiteit Antwerpen (CGB), Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
59.
2006

Beirne G. J.; Hermannstädter C.; Wang L.; Rastelli A.; Schmidt O. G.; Michler P.

Quantum Light Emission of Two Lateral Tunnel-Coupled (In,Ga)As/GaAs Quantum Dots Controlled by a Tunable Static Electric Field
Phys. Rev. Lett. 96, 137401 (2006)
5. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany;
60.
2006

Mendach S.; Rastelli A.; Benyoucef M.; Songmuang R.; Kiravittaya S.; Schmidt O. G.

Light emission and wave guiding of quantum dots in a tube
Appl. Phys. Lett. 88, 111120 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
61.
2006

Kiravittaya S.; Rastelli A.; Schmidt O. G.

Photoluminescence from seeded three-dimensional InAs/;GaAs quantum-dot crystals
Appl. Phys. Lett. 88, 043112 (2006)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
62.
2005

Kiravittaya S.; Rastelli A.; Schmidt O. G.

Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution
Appl. Phys. Lett. 87, 243112 (2005)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
63.
2005

Stoffel M.; Rastelli A.; Kiravittaya S.; Schmidt O. G.

Strain-mediated lateral SiGe island motion in single and stacked layers
Phys. Rev. B 72, 205411 (2005)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany;
64.
2005

Katsaros G.; Schmidt O. G.; Denker U.; Rastelli A.; Bittner A. M.; Esteban R.; Stoffel M.; Costantini G.; Kern K.

Kinetic origin of island intermixing during the growth of Ge on Si(001)
Phys. Rev. B 72, 195320 (2005)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
65.
2005

Schildermans N.; Hayne M.; Rastelli A.; Moshchalkov V. V.; Schmidt O. G.

Nonparabolic band effects in GaAs/;AlxGa1-x;As quantum dots and ultrathin quantum wells
Phys. Rev. B 72, 115312 (2005)
Pulsed Field Group, Laboratory of Solid State Physics and Magnetism, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
66.
2005

Krause B.; Metzger T. H.; Rastelli A.; Songmuang R.; Kiravittaya S.; Schmidt O. G.

Shape, strain, and ordering of lateral InAs quantum dot molecules
Phys. Rev. B 72, 085339 (2005)
European Synchrotron Radiation Facility, Boîte Postale220, F-38043 Grenoble Cedex, France;
67.
2005

Rastelli A.; Stoffel M.; Tersoff J.; Kar G. S.; Schmidt O. G.

Kinetic Evolution and Equilibrium Morphology of Strained Islands
Phys. Rev. Lett. 95, 026103 (2005)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
68.
2005

Denker U.; Jesson D. E.; Stoffel M.; Rastelli A.; Schmidt O. G.

Investigating the evolution of dislocated SiGe islands by selective wet‐chemical etching
AIP Conf. Proc. 772, 599 (2005)
Max‐Planck‐Institute for Solid State Research, Heisenbergstrasse 1, D‐70569 Stuttgart, Germany;
69.
2005

Denker U.; Rastelli A.; Stoffel M.; Tersoff J.; Katsaros G.; Costantini G.; Kern K.; Jin-Phillipp N. Y.; Jesson D. E.; Schmidt O. G.

Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying
Phys. Rev. Lett. 94, 216103 (2005)
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;
70.
2004

Costantini G.; Rastelli A.; Manzano C.; Songmuang R.; Schmidt O. G.; Kern K.; Känel H. von

Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/;GaAs(001) and Ge/;Si(001)
Appl. Phys. Lett. 85, 5673 (2004)
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;
71.
2004

Montalenti F.; Kern K.; Schmidt O. G.; Denker U.; Costantini G.; Manzano C.; Rastelli A.; von Känel H.; Migas D. B.; Raiteri P.; Miglio Leo

Atomic-Scale Pathway of the Pyramid-to-Dome Transition during Ge Growth on Si(001)
Phys. Rev. Lett. 93, 216102 (2004)
72.
2004

Migas D. B.; Raiteri P.; Miglio Leo; Rastelli A.; von Känel H.

Evolution of the Ge/;Si(001) wetting layer during Si overgrowth and crossover between thermodynamic and kinetic behavior
Phys. Rev. B 69, 235318 (2004)
INFM and L-NESS, Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy;
73.
2004

Rastelli A.; Stufler S.; Schliwa A.; Songmuang R.; Manzano C.; Costantini G.; Kern K.; Zrenner A.; Bimberg D.; Schmidt O. G.

Hierarchical Self-Assembly of GaAs/AlGaAs Quantum Dots
Phys. Rev. Lett. 92, 166104 (2004)
74.
2003

Rastelli A.; von Känel H.; Albini G.; Raiteri P.; Migas D. B.; Miglio Leo

Erratum: Morphological and Compositional Evolution of the Ge/Si(001); Surface During Exposure to a Si Flux [Phys. Rev. Lett. ;90, 216104 (2003)]
Phys. Rev. Lett. 91, 229901 (2003)
75.
2003

Rastelli A.; Von Känel H.; Spencer B. J.; Tersoff J.

Prepyramid-to-pyramid transition of SiGe islands on Si(001)
Phys. Rev. B 68, 115301 (2003)
INFM and Dipartimento di Fisica “A. Volta,” Università Degli Studi di Pavia, Via Bassi 6, I-27100 Pavia, Italy;
76.
2003

Tersoff J.; Spencer B. J.; Rastelli A.; Känel H. Von

Tersoff et al. Reply: Comparison of Continuum and Step Models for SiGe Islands:
Phys. Rev. Lett. 91, 099602 (2003)
77.
2003

Rastelli A.; von Känel H.; Albini G.; Raiteri P.; Migas D. B.; Miglio Leo

Morphological and Compositional Evolution of the Ge/Si(001); Surface During Exposure to a Si Flux
Phys. Rev. Lett. 90, 216104 (2003)
78.
2002

Tersoff J.; Spencer B. J.; Rastelli A.; von Känel H.

Barrierless Formation and Faceting of SiGe Islands on Si(001)
Phys. Rev. Lett. 89, 196104 (2002)
79.
2002

Raiteri P.; Migas D. B.; Miglio Leo; Rastelli A.; von Känel H.

Critical Role of the Surface Reconstruction in the Thermodynamic Stability of {105} ; Ge Pyramids on Si(001)
Phys. Rev. Lett. 88, 256103 (2002)
INFM and Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy;
80.
2002

Rastelli A.; Müller E.; von Känel H.

Shape preservation of Ge/Si(001) islands during Si capping
Appl. Phys. Lett. 80, 1438 (2002)
Istituto Nazionale per la Fisica della Materia (INFM) and Dip. di Fisica A. Volta, Università di Pavia, I-27100 Pavia, Italy;

Co-authors

Co-publications
69

Schmidt, Oliver G.
21

Kiravittaya, Suwit
17

Stoffel, M
12

Kern, Klaus
12

Benyoucef, M
11

Costantini, G
10

Songmuang, Rudeesun
10

Tersoff, J
9

von Känel, Hans
9

Miglio, Leo
8

Michler, Peter
8

Wang, Lijuan
7

Ding, Fei
6

Bauer, Günther
6

Katsaros, G