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Shur, Michael

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Research Profile

Latest Publications

1.
2012

Liu Guanxiong; Rumyantsev Sergey; Shur Michael; Balandin Alexander A.

Graphene thickness-graded transistors with reduced electronic noise
Appl. Phys. Lett. 100, 033103 (2012)
Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521, USA
2.
2011

Nogajewski K.; Łusakowski J.; Knap W.; Popov V. V.; Teppe F.; Rumyantsev S. L.; Shur M. S.

Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators
Appl. Phys. Lett. 99, 213501 (2011)
Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
3.
2011

Elkhatib T. A.; Kachorovskii V. Yu.; Stillman W. J.; Rumyantsev S.; Zhang X.-C.; Shur M. S.

Terahertz response of field-effect transistors in saturation regime
Appl. Phys. Lett. 98, 243505 (2011)
Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180, USA

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All Publications

1.
2012

Liu Guanxiong; Rumyantsev Sergey; Shur Michael; Balandin Alexander A.

Graphene thickness-graded transistors with reduced electronic noise
Appl. Phys. Lett. 100, 033103 (2012)
Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521, USA
2.
2011

Nogajewski K.; Łusakowski J.; Knap W.; Popov V. V.; Teppe F.; Rumyantsev S. L.; Shur M. S.

Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators
Appl. Phys. Lett. 99, 213501 (2011)
Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
3.
2011

Elkhatib T. A.; Kachorovskii V. Yu.; Stillman W. J.; Rumyantsev S.; Zhang X.-C.; Shur M. S.

Terahertz response of field-effect transistors in saturation regime
Appl. Phys. Lett. 98, 243505 (2011)
Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180, USA
4.
2011

Pinos A.; Liuolia V.; Marcinkevičius S.; Yang J.; Gaska R.; Shur M. S.

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
J. Appl. Phys. 109, 113516 (2011)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
5.
2011

Pinos A.; Marcinkevičius S.; Shur M. S.

High current-induced degradation of AlGaN ultraviolet light emitting diodes
J. Appl. Phys. 109, 103108 (2011)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
6.
2011

Chivukula Venkata; Čiplys Daumantas; Jain Rakesh; Yang Jinwei; Gaska Remis; Shur Michael

Acoustic plate mode propagation and interaction with ultraviolet light in periodic AIN-on-sapphire structure
Appl. Phys. Lett. 98, 093504 (2011)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
7.
2010

Pinos A.; Marcinkevičius S.; Yang J.; Gaska R.; Shatalov M.; Shur M. S.

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
J. Appl. Phys. 108, 093113 (2010)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
8.
2010

Ryzhii M.; Ryzhii V.; Otsuji T.; Mitin V.; Shur M. S.

Electrically induced n-i-p junctions in multiple graphene layer structures
Phys. Rev. B 82, 075419 (2010)
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan and CREST, Japan Science and Technology Agency, Tokyo 107-0075, Japan
9.
2010

Rumyantsev S. L.; Levinshtein M. E.; Shur M. S.; Palmour J. W.; Agarwal A. K.; Das M. K.

Effect of forward current stress on low frequency noise in 4H–SiC p-n junctions
J. Appl. Phys. 108, 024508 (2010)
The Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
10.
2010

Shatalov Max; Sun Wenhong; Bilenko Yuri; Sattu Ajay; Hu Xuhong; Deng Jianyu; Yang Jinwei; Shur Michael; Moe Craig; Wraback Michael; Gaska Remis

Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
Appl. Phys. Express 3, 062101 (2010)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A.
11.
2010

Chivukula Venkata; Ciplys Daumantas; Shur Michael; Dutta Partha

ZnO nanoparticle surface acoustic wave UV sensor
Appl. Phys. Lett. 96, 233512 (2010)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
12.
2010

Chivukula Venkata; Ciplys Daumantas; Sereika Albertas; Shur Michael; Yang Jinwei; Gaska Remis

AlGaN based highly sensitive radio-frequency UV sensor
Appl. Phys. Lett. 96, 163504 (2010)
Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
13.
2010

Ryzhii V.; Dubinov A. A.; Otsuji T.; Mitin V.; Shur M. S.

Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides
J. Appl. Phys. 107, 054505 (2010)
Department of Electrical Engineering, University at Buffalo, State University of New York, New York 14260, USA
14.
2010

Sun W.; Shatalov M.; Deng J.; Hu X.; Yang J.; Lunev A.; Bilenko Y.; Shur M.; Gaska R.

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
Appl. Phys. Lett. 96, 061102 (2010)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA
15.
2010

Muravjov A. V.; Veksler D. B.; Popov V. V.; Polischuk O. V.; Pala N.; Hu X.; Gaska R.; Saxena H.; Peale R. E.; Shur M. S.

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures
Appl. Phys. Lett. 96, 042105 (2010)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
16.
2009

Pinos A.; Marcinkevičius S.; Yang J.; Bilenko Y.; Shatalov M.; Gaska R.; Shur M. S.

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
Appl. Phys. Lett. 95, 181914 (2009)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
17.
2009

Čiplys D.; Rimeika R.; Sereika A.; Poderys V.; Rotomskis R.; Shur M. S.

Effect of substrate piezoelectricity on surface acoustic wave propagation in humidity-sensitive structures with porphyrin layers
Appl. Phys. Lett. 95, 171903 (2009)
Department of Radiophysics, Vilnius University, 10222 Vilnius, Lithuania
18.
2009

Liuolia V.; Marcinkevičius S.; Pinos A.; Gaska R.; Shur M. S.

Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
Appl. Phys. Lett. 95, 091910 (2009)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
19.
2009

Peale R. E.; Saxena H.; Buchwald W. R.; Aizin G.; Muravjov A. V.; Veksler D. B.; Pala N.; Hu X.; Gaska R.; Shur M. S.

Grating-gate tunable plasmon absorption in InP and GaN based HEMTs
Proc. SPIE Int. Soc. Opt. Eng. 7467, 74670Q (2009)
Univ. of Central Florida (USA)
20.
2009

Liu G.; Stillman W.; Rumyantsev S.; Shao Q.; Shur M.; Balandin A. A.

Low-frequency electronic noise in the double-gate single-layer graphene transistors
Appl. Phys. Lett. 95, 033103 (2009)
Department of Electrical Engineering and Materials Science and Engineering Program, Nano-Device Laboratory, Bourns College of Engineering, University of California-Riverside, Riverside, California 92521, USA
21.
2009

Rumyantsev S. L.; Jin Sung Hun; Shur M. S.; Park Mun-Soo

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric
J. Appl. Phys. 105, 124504 (2009)
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
22.
2009

Muravjov A. V.; Veksler D. B.; Hu X.; Gaska R.; Pala N.; Saxena H.; Peale R. E.; Shur M. S.

Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures
Proc. SPIE Int. Soc. Opt. Eng. 7311, 73110D (2009)
Rensselaer Polytechnic Institute (USA)
23.
2009

Rumyantsev S. L.; Levinshtein M. E.; Ivanov P. A.; Shur M. S.; Palmour J. W.; Agarwal A. K.; Hull B. A.; Ryu S. H.

Noise and Interface Density of Traps in 4 H‐SiC MOSFETs
AIP Conf. Proc. 1129, 341 (2009)
Rensselaer Polytechnic Institute, Troy NY 12180‐3590, USA;
24.
2009

Rumyantsev S.; Bersuker G.; Young C.; Shur M.

Low Frequency Noise in High‐k Dielectric MOSFETs. How Far From the Channel Are We Probing the Traps?
AIP Conf. Proc. 1129, 255 (2009)
Rensselaer Polytechnic Institute, Troy NY 12180‐3590;
25.
2009

Shatalov Max; Yang Jinwei; Sun Wenhong; Kennedy Robert; Gaska Remis; Liu Kai; Shur Michael; Tamulaitis Gintautas

Efficiency of light emission in high aluminum content AlGaN quantum wells
J. Appl. Phys. 105, 073103 (2009)
Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, South Carolina 29209, USA
26.
2009

Ryzhii Victor; Ryzhii Maxim; Mitin Vladimir; Shur Michael S.

Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p--i--n Junction
Appl. Phys. Express 2, 034503 (2009)
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
27.
2008

Rumyantsev S. L.; Shur M. S.; Levinshtein M. E.; Ivanov P. A.; Palmour J. W.; Das M. K.; Hull B. A.

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors
J. Appl. Phys. 104, 094505 (2008)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, CII 9017, Troy, New York 12180-3590, USA
28.
2008

Žukauskas A.; Vaicekauskas R.; Ivanauskas F.; Vaitkevičius H.; Shur M. S.

Spectral optimization of phosphor-conversion light-emitting diodes for ultimate color rendering
Appl. Phys. Lett. 93, 051115 (2008)
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222 Vilnius, ;Lithuania
29.
2008

Jain R.; Sun W.; Yang J.; Shatalov M.; Hu X.; Sattu A.; Lunev A.; Deng J.; Shturm I.; Bilenko Y.; Gaska R.; Shur M. S.

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
Appl. Phys. Lett. 93, 051113 (2008)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA
30.
2008

Leiman V. G.; Ryzhii M.; Satou A.; Ryabova N.; Ryzhii V.; Otsuji T.; Shur M. S.

Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with a nanostring/carbon nanotube as the mechanically floating gate
J. Appl. Phys. 104, 024514 (2008)
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu 965–8580, ;Japan
31.
2008

Popov V. V.; Koudymov A. N.; Shur M.; Polischuk O. V.

Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel
J. Appl. Phys. 104, 024508 (2008)
Department of Electrical, Computer, and System Engineering and Center for Integrated Electronics, CII 9015, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
32.
2008

Žukauskas A.; Vaicekauskas R.; Ivanauskas F.; Vaitkevičius H.; Shur M. S.

Rendering a color palette by light-emitting diodes
Appl. Phys. Lett. 93, 021109 (2008)
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222 Vilnius, ;Lithuania
33.
2008

Dmitriev A. P.; Shur M. S.

One dimensional plasmons in pyroelectric-semiconductor composites
J. Appl. Phys. 103, 084511 (2008)
Center for Integrated Electronics and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180, USA
34.
2008

Rumyantsev S. L.; Shur M. S.; Levinshtein M. E.; Motayed A.; Davydov A. V.

Low-frequency noise in GaN nanowire transistors
J. Appl. Phys. 103, 064501 (2008)
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
35.
2008

Fobelets Kristel; Rumyantsev Sergey L.; Shur Michael S.; Olsen Sarah H.

Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors
J. Appl. Phys. 103, 044501 (2008)
Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT, United Kingdom
36.
2008

Pinos A.; Marcinkevičius S.; Liu K.; Shur M. S.; Kuokštis E.; Tamulaitis G.; Gaska R.; Yang J.; Sun W.

Screening dynamics of intrinsic electric field in AlGaN quantum wells
Appl. Phys. Lett. 92, 061907 (2008)
Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
37.
2008

Ryzhii V.; Satou A.; Otsuji T.; Shur M. S.

Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates
J. Appl. Phys. 103, 014504 (2008)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan
38.
2007

Levinshtein M. E.; Rumyantsev S. L.; Tauk R.; Boubanga S.; Dyakonova N.; Knap W.; Shchepetov A.; Bollaert S.; Rollens Y.; Shur M. S.

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length
J. Appl. Phys. 102, 064506 (2007)
GES-UMR 5650 CNRS-Université Montpellier2, 34900 Montpellier, France;
39.
2007

Rumyantsev Sergey L.; Fobelets Kristel; Hackbarth Thomas; Shur Michael S.

Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
Jpn. J. Appl. Phys., Part 1 46, 4011 (2007)
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A.
40.
2007

Teperik T. V.; García de Abajo F. J.; Popov V. V.; Shur M. S.

Strong terahertz absorption bands in a scaled plasmonic crystal
Appl. Phys. Lett. 90, 251910 (2007)
Donostia International Physics Center, Aptdo. 1072, 20080 San Sebastian, Spain and Institute of Radio Engineering and Electronics (Saratov Division), Russian Academy of Sciences, Zelyonaya 38, 410019 Saratov, Russia
41.
2007

Ryzhii V.; Ryzhii M.; Hu Y.; Hagiwara I.; Shur M. S.

Resonant detection of modulated terahertz radiation in micromachined high-electron-mobility transistor
Appl. Phys. Lett. 90, 203503 (2007)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan
42.
2007

Rimeika R.; Čiplys D.; Každailis P.; Shur M. S.

Anisotropic acousto-optic diffraction by leaky wave radiation in ZX-LiNbO3
Appl. Phys. Lett. 90, 181935 (2007)
Department of Radiophysics, Vilnius University, Vilnius 10222, Lithuania
43.
2007

Kuokstis E.; Tamulaitis G.; Liu K.; Shur M. S.; Li J. W.; Yang J. W.; Asif Khan M.

Photoluminescence dynamics in highly nonhomogeneously excited GaN
Appl. Phys. Lett. 90, 161920 (2007)
Institute of Materials Science and Applied Research and Semiconductor Physics Department Vilnius University, Sauletekio 9-III, LT-10222 Vilnius, Lithuania
44.
2007

Mickevičius J.; Tamulaitis G.; Kuokštis E.; Liu K.; Shur M. S.; Zhang J. P.; Gaska R.

Well-width-dependent carrier lifetime in AlGaN/;AlGaN quantum wells
Appl. Phys. Lett. 90, 131907 (2007)
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, LT-10222 Vilnius, Lithuania and Semiconductor Physics Department, Vilnius University, Saulėtekio 9-III, LT-10222 Vilnius, Lithuania;
45.
2007

Marcinkevičius S.; Pinos A.; Liu K.; Veksler D.; Shur M. S.; Zhang J.; Gaska R.

Intrinsic electric fields in AlGaN quantum wells
Appl. Phys. Lett. 90, 081914 (2007)
Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
46.
2007

Deng Jianyu; Bilenko Yuriy; Lunev Alex; Hu Xuhong; Katona Thomas M.; Zhang Jianping; Shur Michael S.; Gaska Remis

247 nm Ultra-Violet Light Emitting Diodes
Jpn. J. Appl. Phys., Part 2 46, L263 (2007)
Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209, U.S.A.
47.
2006

Tauk R.; Skotnicki T.; Teppe F.; Boubanga S.; Coquillat D.; Knap W.; Meziani Y. M.; Gallon C.; Boeuf F.; Fenouillet-Beranger C.; Maude D. K.; Rumyantsev S.; Shur M. S.

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
Appl. Phys. Lett. 89, 253511 (2006)
GES, UMR 5650 CNRS-Universite Montpellier 2, 34090 Montpellier, France
48.
2006

Ryzhii Victor; Shur Michael S.

Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
Jpn. J. Appl. Phys., Part 2 45, L1118 (2006)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
49.
2006

Rumyantsev S. L.; Wetzel C.; Shur M. S.

Wavelength-resolved low-frequency noise of GaInN/;GaN green light emitting diodes
J. Appl. Phys. 100, 084506 (2006)
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 and Ioffe Institute of Russian Academy of Sciences, 194021 St. Petersburg, Russia
50.
2006

Dmitriev A. P.; Shur M. S.

Ballistic admittance: Periodic variation with frequency
Appl. Phys. Lett. 89, 142102 (2006)
Center for Broadband Data Transport Science and Technology, Rensselaer Polytechnic Institute, Troy, New York 12180; Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180; and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180
51.
2006

Popov V. V.; Tsymbalov G. M.; Fateev D. V.; Shur M. S.

Cooperative absorption of terahertz radiation by plasmon modes in an array of field-effect transistors with two-dimensional electron channel
Appl. Phys. Lett. 89, 123504 (2006)
Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, 410019 Saratov, Russia
52.
2006

Rumyantsev Sergey L.; Dmitriev Alexander P.; Levinshtein Michael E.; Veksler Dmitry; Shur Michael S.; Palmour John W.; Das Mrinal K.; Hull Brett A.

Generation-recombination noise in forward biased 4H‐;SiCp‐n; diodes
J. Appl. Phys. 100, 064505 (2006)
Rensselaer Polytechnic Institute, Troy, New York 12180 and Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
53.
2006

Sawyer S.; Rumyantsev S. L.; Shur M. S.; Pala N.; Bilenko Yu.; Zhang J. P.; Hu X.; Lunev A.; Deng J.; Gaska R.

Current and optical noise of GaN/;AlGaN light emitting diodes
J. Appl. Phys. 100, 034504 (2006)
Department of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
54.
2006

Gundlach D. J.; Zhou L.; Nichols J. A.; Jackson T. N.; Necliudov P. V.; Shur M. S.

An experimental study of contact effects in organic thin film transistors
J. Appl. Phys. 100, 024509 (2006)
The Department of Electrical Engineering, The Pennsylvania State University, 121 Electrical Engineering East, University Park, Pennsylvania 16802
55.
2006

Vijayaraghavan A.; Kar S.; Rumyantsev S.; Khanna A.; Soldano C.; Pala N.; Vajtai R.; Kanzaki K.; Kobayashi Y.; Nalamasu O.; Shur M. S.; Ajayan P. M.

Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices
J. Appl. Phys. 100, 024315 (2006)
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180
56.
2006

Mickevičius J.; Tamulaitis G.; Shur M. S.; Fareed Q.; Zhang J. P.; Gaska R.

Saturated gain in GaN epilayers studied by variable stripe length technique
J. Appl. Phys. 99, 103513 (2006)
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, LT-10222 Vilnius, Lithuania;
57.
2006

Ryzhii V.; Satou A.; Knap W.; Shur M. S.

Plasma oscillations in high-electron-mobility transistors with recessed gate
J. Appl. Phys. 99, 084507 (2006)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan
58.
2006

O'Leary Stephen K.; Foutz Brian E.; Shur Michael S.; Eastman Lester F.

Potential performance of indium-nitride-based devices
Appl. Phys. Lett. 88, 152113 (2006)
Faculty of Engineering, University of Regina, Regina, Saskatchewan S4S 0A2, Canada
59.
2006

Veksler D.; Teppe F.; Dmitriev A. P.; Kachorovskii V. Yu.; Knap W.; Shur M. S.

Detection of terahertz radiation in gated two-dimensional structures governed by dc current
Phys. Rev. B 73, 125328 (2006)
Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180, USA
60.
2005

Dmitriev Alexander; Shur Michael S.

Plasma oscillations of two-dimensional electron stripe
Appl. Phys. Lett. 87, 243514 (2005)
Broadband Center and ECSE Department, Rensselaer Polytechnic Institute, Troy, New York 12180
61.
2005

Mickevičius J.; Shur M. S.; Fareed R. S. Qhalid; Zhang J. P.; Gaska R.; Tamulaitis G.

Time-resolved experimental study of carrier lifetime in GaN epilayers
Appl. Phys. Lett. 87, 241918 (2005)
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180
62.
2005

O'Leary Stephen K.; Foutz Brian E.; Shur Michael S.; Eastman Lester F.

Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
Appl. Phys. Lett. 87, 222103 (2005)
Faculty of Engineering, University of Regina, Regina, Saskatchewan, Canada S4S 0A2
63.
2005

Rumyantsev S. L.; Dmitriev A. P.; Levinshtein M. E.; Shur M. S.

Unsolved Problems of Low Frequency Noise in GaN‐Based HFETs
AIP Conf. Proc. 800, 431 (2005)
Rensselaer Polytechnic Institute, Troy, NY 12180‐3590;
64.
2005

Kazlauskas K.; Žukauskas A.; Tamulaitis G.; Mickevičius J.; Shur M. S.; Fareed R. S. Qhalid; Zhang J. P.; Gaska R.

Exciton hopping and nonradiative decay in AlGaN epilayers
Appl. Phys. Lett. 87, 172102 (2005)
Institute of Materials Science and Applied Research and Semiconductor Physics Department, Vilnius University, LT-10222 Vilnius, Lithuania
65.
2005

Zhang Jianping; Hu Xuhong; Lunev Alex; Deng Jianyu; Bilenko Yuriy; Katona Thomas M.; Shur Michael S.; Gaska Remis; Khan M. Asif

AlGaN Deep-Ultraviolet Light-Emitting Diodes
Jpn. J. Appl. Phys., Part 1 44, 7250 (2005)
Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209, U.S.A.
66.
2005

Dyakonov Michel; Shur Michael S.

Current instability and plasma waves generation in ungated two-dimensional electron layers
Appl. Phys. Lett. 87, 111501 (2005)
Laboratoire de Physique Théorique et Astroparticules, cc 070, Université Montpellier II, 34095 Montpellier, France;
67.
2005

Levinshtein M. E.; Dmitriev A. P.; Rumyantsev S. L.; Shur M. S.

Model of the 1/f Noise in GaN/AlGaN Heterojunction Field Effect Transistors
AIP Conf. Proc. 780, 291 (2005)
Solid State Electronics Division, The Ioffe Physical‐Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia;
68.
2005

Popov V. V.; Polischuk O. V.; Shur M. S.

Resonant excitation of plasma oscillations in a partially gated two-dimensional electron layer
J. Appl. Phys. 98, 033510 (2005)
Institute of Radio Engineering and Electronics (Saratov Division), Russian Academy of Sciences, Saratov 410019, Russia
69.
2005

Teppe F.; Knap W.; Veksler D.; Shur M. S.; Dmitriev A. P.; Kachorovskii V. Yu.; Rumyantsev S.

Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
Appl. Phys. Lett. 87, 052107 (2005)
Center for Broadband Data Transport and Department of Electrical, Computer and System Engineering, Troy, New York 12180 and GES CNRS-Universite Montpellier, 2 UMR 5650 34900 Montpellier, France
70.
2005

Saygi S.; Koudymov A.; Adivarahan V.; Yang J.; Simin G.; Khan M. Asif; Deng J.; Gaska R.; Shur M. S.

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
Appl. Phys. Lett. 87, 043505 (2005)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
71.
2005

Teppe F.; Veksler D.; Kachorovski V. Yu.; Dmitriev A. P.; Xie X.; Zhang X.-C.; Rumyantsev S.; Knap W.; Shur M. S.

Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
Appl. Phys. Lett. 87, 022102 (2005)
Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 and GES CNRS-Université Montpellier2 UMR 5650 34900 Montpellier, France;
72.
2005

Ikonnikov Anton; Erofeeva Irina; Kozlov Dmitry; Kuznetsov Oleg; Aleshkin Vladimir; Gavrilenko Vladimir; Veksler Dmitry; Shur Michael S.

Intersubband Hole Cyclotron Resonance in Strained Ge/GeSi MQW Heterostructures
AIP Conf. Proc. 772, 949 (2005)
Institute for Physics of Microstructures RAS, Nizhniy Novgorod, Russia
73.
2005

Ikonnikov Anton; Erofeeva Irina; Kozlov Dmitry; Kuznetsov Oleg; Aleshkin Vladimir; Gavrilenko Vladimir; Veksler Dmitry; Shur Michael S.

A+;‐Centers and “Barrier‐Spaced” A;0‐Centers in Ge/GeSi MQW Heterostructures
AIP Conf. Proc. 772, 947 (2005)
Institute for Physics of Microstructures RAS, Nizhniy Novgorod, Russia
74.
2005

Tamulaitis G.; Mickevicius J.; Aleksiejunas R.; Shur M. S.; Zhang J. P.; Fareed Q.; Gaska R.

Dislocation‐limited Lifetime of Nonequilibrium Carriers in AlGaN Epilayers
AIP Conf. Proc. 772, 241 (2005)
Institute of Materials Science and Applied Research, Vilnius University, Lithuania
75.
2005

Teppe F.; Łusakowski J.; Dyakonova N.; Meziani Y. M.; Knap W.; Parenty T.; Bollaert S.; Cappy A.; Popov V.; Boeuf F.; Skotnicki T.; Maude D.; Rumyantsev S.; Shur M. S.

Terahertz Emission and Detection by Plasma Waves in Nanoscale Transistors
AIP Conf. Proc. 772, 1523 (2005)
GES CNRS‐Universite Montpellier2 UMR 5650 34900 Montpellier, France;
76.
2005

Dmitriev A. P.; Levinshtein M. E.; Rumyantsev S. L.; Shur M. S.

Tunneling mechanism of the 1/f; noise in GaN/;AlGaN heterojunction field-effect transistors
J. Appl. Phys. 97, 123706 (2005)
Solid State Electronics Division, The Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia
77.
2005

Rumyantsev S. L.; Deng J.; Lunev A.; Hu X.; Zhang J. P.; Bilenko Yu.; Pala N.; Shur M. S.; Sawyer S.; Gaska R.

Low-frequency noise of GaN-based ultraviolet light-emitting diodes
J. Appl. Phys. 97, 123107 (2005)
Department of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
78.
2005

Dyakonova N.; Teppe F.; Łusakowski J.; Knap W.; Levinshtein M.; Dmitriev A. P.; Shur M. S.; Bollaert S.; Cappy A.

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
J. Appl. Phys. 97, 114313 (2005)
Groupe d’Etude des Semiconducteurs (GES)-Unité Mixte de Recherche (UMR) 5650 Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2, 34900 Montpellier, France;
79.
2005

Fareed R. S. Qhalid; Hu X.; Tarakji A.; Deng J.; Gaska R.; Shur M.; Khan M. A.

High-power AlGaN/;InGaN/;AlGaN/;GaN recessed gate heterostructure field-effect transistors
Appl. Phys. Lett. 86, 143512 (2005)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209
80.
2005

Mickevičius J.; Aleksiejūnas R.; Shur M. S.; Sakalauskas S.; Tamulaitis G.; Fareed Q.; Gaska R.

Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
Appl. Phys. Lett. 86, 041910 (2005)
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180
81.
2005

Bilenko Yuriy; Lunev Alex; Hu Xuhong; Deng Jianyu; Katona Thomas M; Zhang Jianping; Gaska Remis; Shur Michael S; Sun Wenhong; Adivarahan Vinod; Shatalov Maxim; Khan Asif

10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
Jpn. J. Appl. Phys., Part 2 44, L98 (2005)
Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
82.
2005

Kachorovskii V. Yu.; Shur M. S.

Electron and hole moveable islands in pyroelectric/semiconductor granular systems
Appl. Phys. Lett. 86, 012101 (2005)
Center for Broadband Data Transport Science and Technology and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180
83.
2004

Ryzhii V.; Satou A.; Khmyrova I.; Chaplik A.; Shur M. S.

Plasma oscillations in a slot diode structure with a two-dimensional electron channel
J. Appl. Phys. 96, 7625 (2004)
Computer Solid State Physics Laboratory, University of Aizu, Aizu- Wakamatsu 965-8580, Japan
84.
2004

Zhang J. P.; Hu X.; Bilenko Yu.; Deng J.; Lunev A.; Shur M. S.; Gaska R.; Shatalov M.; Yang J. W.; Khan M. A.

AlGaN-based 280 ;nm light-emitting diodes with continuous-wave power exceeding 1 ;mW at 25 ;mA
Appl. Phys. Lett. 85, 5532 (2004)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209
85.
2004

Braga N.; Mickevicius R.; Gaska R.; Shur M. S.; Khan M. Asif; Simin G.

Simulation of gate lag and current collapse in gallium nitride field-effect transistors
Appl. Phys. Lett. 85, 4780 (2004)
Integrated Systems Engineering Inc., San Jose, California 95113
86.
2004

Stanikunas Rytis; Vaitkevicius Henrikas; Svegzda Algimantas; Viliunas Vilius; Bliznikas Zenius; Breive Kestutis; Vaicekauskas Rimantas; Gaska Remis; Zukauskas Arturas; Kurilcik Genadij; Novickovas Algirdas; Shur Michael S.

Color perception under illumination by quadrichromatic solid-state lamp
Proc. SPIE Int. Soc. Opt. Eng. 5530, 347 (2004)
Vilnius Univ. (Lithuania)
87.
2004

Tamulaitis Gintautas; Duchovskis Pavelas; Bliznikas Zenius; Breive Kestutis; Ulinskaite Raimonda; Brazaityte Ausra; Novickovas Algirdas; Zukauskas Arturas; Shur Michael S.

High-power LEDs for plant cultivation
Proc. SPIE Int. Soc. Opt. Eng. 5530, 165 (2004)
Vilnius Univ. (Lithuania)
88.
2004

Bu G.; Ciplys D.; Shur M. S.; Namkoong G.; Doolittle W. A.; Hunt W. D.

Leaky surface acoustic waves in Z-LiNbO3 substrates with epitaxial AIN overlays
Appl. Phys. Lett. 85, 3313 (2004)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180-3590
89.
2004

Rumyantsev S. L.; Hoffman A.; Pascal F.; Meziani Y.; Knap W.; Dyakonova N.; Shur M. S.; Hu X.; Fareed Q.; Bilenko Yu.; Gaska R.

1/f; noise in GaN/;AlGaN heterostructure field-effect transistors in high magnetic fields at 300 ;K
J. Appl. Phys. 96, 3845 (2004)
Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York
90.
2004

Bu G.; Shur M. S.; Čiplys D.; Rimeika R.; Gaska R.; Fareed Q.

Guided-wave acousto-optic diffraction in AlxGa1-x;N epitaxial layers
Appl. Phys. Lett. 85, 2157 (2004)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic, Institute, Troy, New York 12180
91.
2004

Knap W.; Skotnicki T.; Teppe F.; Meziani Y.; Dyakonova N.; Lusakowski J.; Boeuf F.; Maude D.; Rumyantsev S.; Shur M. S.

Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
Appl. Phys. Lett. 85, 675 (2004)
GES CNRS-Universite Montpellier2 34900 Montpellier, France
92.
2004

Rumyantsev S. L.; Shur M. S.; Bilenko Yu.; Kosterin P. V.; Salzberg B. M.

Low frequency noise and long-term stability of noncoherent light sources
J. Appl. Phys. 96, 966 (2004)
Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180;
93.
2004

Tamulaitis G.; Yilmaz I.; Shur M. S.; Fareed Q.; Gaska R.; Khan M. A.

Photoluminescence of AlGaN grown on bulk AlN substrates
Appl. Phys. Lett. 85, 206 (2004)
Department of Electrical, Computer, and Systems Engineering, and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
94.
2004

Bu G.; Ciplys D.; Shur M.; Schowalter L. J.; Schujman S.; Gaska R.

Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride
Appl. Phys. Lett. 84, 4611 (2004)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180;
95.
2004

Braga N.; Mickevicius R.; Gaska R.; Hu X.; Shur M. S.; Khan M. Asif; Simin G.; Yang J.

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors
J. Appl. Phys. 95, 6409 (2004)
Integrated Systems Engineering Inc., San Jose, California 95113, USA;
96.
2004

Kachorovskii V. Yu.; Shur M. S.

Polarization-induced electron island in semiconductor grain placed into pyroelectric matrix
Appl. Phys. Lett. 84, 2340 (2004)
Center for Broadband Data Transport Science and Technology and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180;
97.
2004

Knap W.; Lusakowski J.; Parenty T.; Bollaert S.; Cappy A.; Popov V. V.; Shur M. S.

Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
Appl. Phys. Lett. 84, 2331 (2004)
GES, CNRS-Université Montpellier 2, 34900 Montpellier, France;
98.
2004

Fareed R. S. Qhalid; Jain R.; Gaska R.; Shur M. S.; Wu J.; Walukiewicz W.; Khan M. Asif

High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
Appl. Phys. Lett. 84, 1892 (2004)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209;
99.
2004

Satou A.; Ryzhii M.; Khmyrova I.; Ryzhii V.; Shur M. S.

Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions
J. Appl. Phys. 95, 2084 (2004)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;
100.
2004

Zukauskas Arturas; Vaicekauskas Rimantas; Ivanauskas Felikas; Kurilcik Genadij; Bliznikas Zenius; Breive Kestutis; Krupic Jevgenij; Rupsys Andrius; Novickovas Algirdas; Vitta Pranciskus; Navickas Alvydas; Shur Michael S.; Raskauskas Vytautas; Gaska Remis

Quadrichromatic white solid state lamp with digital feedback
Proc. SPIE Int. Soc. Opt. Eng. 5187, 185 (2004)
Vilnius Univ. (Lithuania)
101.
2004

Tamulaitis G.; Yilmaz I.; Shur M. S.; Anderson T.; Gaska R.

Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates
Appl. Phys. Lett. 84, 335 (2004)
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180;
102.
2004

Deng Yanqing; Kersting Roland; Xu Jingzhou; Ascazubi Ricardo; Zhang Xi-Cheng; Shur Michael S.; Gaska Remis; Simin Grigory S.; Khan M. Asif; Ryzhii Victor

Millimeter wave emission from GaN high electron mobility transistor
Appl. Phys. Lett. 84, 70 (2004)
Department of Electrical, Computer, and Systems Engineering and RPI/IBM Center for Broadband Data Transfer, CII 9015, Rensselaer Polytechnic Institute, Troy, New York 12180;
103.
2003

Kazlauskas K.; Tamulaitis G.; Žukauskas A.; Khan M. A.; Yang J. W.; Zhang J.; Simin G.; Shur M. S.; Gaska R.

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
Appl. Phys. Lett. 83, 3722 (2003)
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, LT-2040 Vilnius, Lithuania;
104.
2003

Tamulaitis G.; Yilmaz I.; Shur M. S.; Gaska R.; Chen C.; Yang J.; Kuokstis E.; Khan A.; Schujman S. B.; Schowalter L. J.

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities
Appl. Phys. Lett. 83, 3507 (2003)
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180;
105.
2003

Dmitriev A. P.; Kachorovskii V. Yu.; Shur M. S.; Gaska R.

Nonlinear screening of pyroelectric films and grains in semiconductor matrix
J. Appl. Phys. 94, 566 (2003)
Center for Broadband Data Transport Science and Technology and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180
106.
2003

Kazlauskas K.; Tamulaitis G.; Žukauskas A.; Khan M. A.; Yang J. W.; Zhang J.; Kuokstis E.; Simin G.; Shur M. S.; Gaska R.

Exciton and carrier motion in quaternary AlInGaN
Appl. Phys. Lett. 82, 4501 (2003)
Institute of MSAR, Vilnius University, Saulėtekio al. 9-III, LT-2040 Vilnius, Lithuania;
107.
2003

Ryzhii V.; Satou A.; Shur M. S.

Admittance of a slot diode with a two-dimensional electron channel
J. Appl. Phys. 93, 10041 (2003)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;
108.
2003

Rumyantsev S. L.; Simin G.; Asif Khan M.; Levinshtein M. E.; Shur M. S.; Pala N.; Yang J.

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region
J. Appl. Phys. 93, 10030 (2003)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
109.
2003

Karmalkar Shreepad; Sathaiya D. Mahaveer; Shur M. S.

Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Appl. Phys. Lett. 82, 3976 (2003)
Department of Electrical Engineering, Indian Institute of Technology, Madras 600 036, India;
110.
2003

Kuokstis E.; Zhang J.; Fareed Q.; Yang J. W.; Simin G.; Khan M. Asif; Gaska R.; Shur M.; Rojo J. C.; Schowalter L. J.

Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. ;81, 2755 (2002)]
Appl. Phys. Lett. 82, 1488 (2003)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
111.
2003

Hu X.; Deng J.; Pala N.; Gaska R.; Shur M. S.; Chen C. Q.; Yang J.; Simin G.; Khan M. A.; Rojo J. C.; Schowalter L. J.

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
Appl. Phys. Lett. 82, 1299 (2003)
Sensor Electronic Technology, Inc., Columbia, South Carolina 29209;
112.
2003

Shatalov M.; Chitnis A.; Mandavilli V.; Pachipulusu R.; Zhang J. P.; Adivarahan V.; Wu S.; Simin G.; Khan M. Asif; Tamulaitis G.; Sereika A.; Yilmaz I.; Shur M. S.; Gaska R.

Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
Appl. Phys. Lett. 82, 167 (2003)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
113.
2002

Gaska R.; Chen C.; Yang J.; Kuokstis E.; Khan A.; Tamulaitis G.; Yilmaz I.; Shur M. S.; Rojo J. C.; Schowalter L. J.

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
Appl. Phys. Lett. 81, 4658 (2002)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209;
114.
2002

Knap W.; Deng Y.; Rumyantsev S.; Shur M. S.

Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors
Appl. Phys. Lett. 81, 4637 (2002)
Center for Integrated Electronics and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 121180-3590;
115.
2002

Gaska Remis; Zukauskas Arturas; Shur Michael S.; Khan Mohamed A.

Progress in III-nitride based white light sources
Proc. SPIE Int. Soc. Opt. Eng. 4776, 82 (2002)
Sensor Electronic Technology, Inc. (United States)
116.
2002

Ryzhii V.; Khmyrova I.; Satou A.; Vaccaro P. O.; Aida T.; Shur M.

Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation
J. Appl. Phys. 92, 5756 (2002)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;
117.
2002

Adivarahan V.; Wu S.; Chitnis A.; Pachipulusu R.; Mandavilli V.; Shatalov M.; Zhang J. P.; Khan M. Asif; Tamulaitis G.; Sereika A; Yilmaz I.; Shur M. S.; Gaska R.

AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
Appl. Phys. Lett. 81, 3666 (2002)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
118.
2002

Rumyantsev S. L.; Yang J.; Simin G.; Khan M. Asif; Levinshtein M. E.; Shur M. S.; Pala N.; Knap W.; Dmitriev A.; Borovitskaya E.; Deng Y.; Hu X.

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures
J. Appl. Phys. 92, 4726 (2002)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
119.
2002

Kuokstis E.; Zhang J.; Fareed Q.; Yang J. W.; Simin G.; Khan M. Asif; Gaska R.; Shur M.; Rojo C.; Schowalter L.

Near-band-edge photoluminescence of wurtzite-type AlN
Appl. Phys. Lett. 81, 2755 (2002)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
120.
2002

Ryzhii Victor; Shur Michael

Analysis of Tunneling‐Injection Transit‐Time Effects and Self‐Excitation of Terahertz Plasma Oscillations in High‐Electron‐Mobility Transistors
Jpn. J. Appl. Phys., Part 2 41, L922 (2002)
Computer Solid State Physics Laboratory, University of Aizu, Aizu‐Wakamatsu 965‐8580, Japan;
121.
2002

Knap W.; Kachorovskii V.; Deng Y.; Rumyantsev S.; Lü J.-Q.; Gaska R.; Shur M. S.; Simin G.; Hu X.; Khan M. Asif; Saylor C. A.; Brunel L. C.

Nonresonant detection of terahertz radiation in field effect transistors
J. Appl. Phys. 91, 9346 (2002)
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180;
122.
2002

Knap W.; Deng Y.; Rumyantsev S.; Lü J.-Q.; Shur M. S.; Saylor C. A.; Brunel L. C.

Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor
Appl. Phys. Lett. 80, 3433 (2002)
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180;
123.
2002

Koudymov A.; Fatima H.; Simin G.; Yang J.; Khan M. Asif; Tarakji A.; Hu X.; Shur M. S.; Gaska R.

Maximum current in nitride-based heterostructure field-effect transistors
Appl. Phys. Lett. 80, 3216 (2002)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
124.
2002

Ciplys D.; Rimeika R.; Shur M. S.; Rumyantsev S.; Gaska R.; Sereika A.; Yang J.; Khan M. Asif

Visible–blind photoresponse of GaN-based surface acoustic wave oscillator
Appl. Phys. Lett. 80, 2020 (2002)
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180;
125.
2002

Ciplys D.; Rimeika R.; Shur M. S.; Gaska R.; Deng J.; Yang J. W.; Khan M. A.

Acousto-optic diffraction of blue and red light in GaN
Appl. Phys. Lett. 80, 1701 (2002)
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180;
126.
2002

Knap W.; Borovitskaya E.; Shur M. S.; Hsu L.; Walukiewicz W.; Frayssinet E.; Lorenzini P.; Grandjean N.; Skierbiszewski C.; Prystawko P.; Leszczynski M.; Grzegory I.

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
Appl. Phys. Lett. 80, 1228 (2002)
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180;
127.
2002

Ryzhii V.; Khmyrova I.; Shur M.

Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations
J. Appl. Phys. 91, 1875 (2002)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;
128.
2002

Kuokstis E.; Yang J. W.; Simin G.; Khan M. Asif; Gaska R.; Shur M. S.

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
Appl. Phys. Lett. 80, 977 (2002)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
129.
2002

Žukauskas A.; Vaicekauskas R.; Ivanauskas F.; Gaska R.; Shur M. S.

Optimization of white polychromatic semiconductor lamps
Appl. Phys. Lett. 80, 234 (2002)
Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 2040 Vilnius, Lithuania;
130.
2001

Kuokstis E.; Zhang J.; Ryu M.-Y.; Yang J. W.; Simin G.; Khan M. Asif; Gaska R.; Shur M. S.

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
Appl. Phys. Lett. 79, 4375 (2001)
Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208;
131.
2001

Adivarahan V.; Chitnis A.; Zhang J. P.; Shatalov M.; Yang J. W.; Simin G.; Khan M. Asif; Gaska R.; Shur M. S.

Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
Appl. Phys. Lett. 79, 4240 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
132.
2001

Zukauskas Arturas; Ivanauskas Felikas; Vaicekauskas Rimantas; Shur Michael S.; Gaska Remis

Optimization of multichip white solid state lighting source with four or more LEDs
Proc. SPIE Int. Soc. Opt. Eng. 4445, 148 (2001)
Vilnius Univ. (United States)
133.
2001

Simin Grigory; Hu Xuhong; Tarakji Ahmad; Zhang Jianping; Koudymov Alexey; Saygi Salih; Yang Jinwei; Khan Asif; Shur Michael S.; Gaska Remis

AlGaN/InGaN/GaN Double Heterostructure Field‐Effect Transistor
Jpn. J. Appl. Phys., Part 2 40, L1142 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
134.
2001

Hu X.; Koudymov A.; Simin G.; Yang J.; Khan M. Asif; Tarakji A.; Shur M. S.; Gaska R.

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
Appl. Phys. Lett. 79, 2832 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
135.
2001

Simin G.; Koudymov A.; Tarakji A.; Hu X.; Yang J.; Khan M. Asif; Shur M. S.; Gaska R.

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
Appl. Phys. Lett. 79, 2651 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
136.
2001

Adivarahan V.; Simin G.; Tamulaitis G.; Srinivasan R.; Yang J.; Khan M. Asif; Shur M. S.; Gaska R.

Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
Appl. Phys. Lett. 79, 1903 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028;
137.
2001

Zhang Jian Ping; Adivarahan Vinod; Wang Hong Mei; Fareed Qhalid; Kuokstis Edmundas; Chitnis Ashay; Shatalov Maxim; Yang Jin Wei; Simin Grigory; Khan Muhammad Asif; Shur Michael; Gaska Remis

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes
Jpn. J. Appl. Phys., Part 2 40, L921 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
138.
2001

Zhang J.; Kuokstis E.; Fareed Q.; Wang H.; Yang J.; Simin G.; Khan M. Asif; Gaska R.; Shur M.

Pulsed atomic layer epitaxy of quaternary AlInGaN layers
Appl. Phys. Lett. 79, 925 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
139.
2001

Dmitriev A. P.; Kachorovskii V. Yu.; Shur M. S.

Plasma wave instability in gated collisionless two-dimensional electron gas
Appl. Phys. Lett. 79, 922 (2001)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180;
140.
2001

Rumyantsev S. L.; Pala N.; Shur M. S.; Gaska R.; Levinshtein M. E.; Adivarahan V.; Yang J.; Simin G.; Khan M. Asif

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
Appl. Phys. Lett. 79, 866 (2001)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
141.
2001

Rumyantsev S. L.; Hu X.; Simin G.; Khan M. Asif; Levinshtein M. E.; Gaska R.; Shur M. S.; Pala N.; Yang J.

Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors
J. Appl. Phys. 90, 310 (2001)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
142.
2001

Dmitriev A. P.; Borovitskaya E.; Levinshtein M. E.; Rumyantsev S. L.; Shur M. S.

Low frequency noise in degenerate semiconductors
J. Appl. Phys. 90, 301 (2001)
Solid State Electronics Division, The Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia;
143.
2001

Adivarahan V.; Lunev A.; Khan M. Asif; Yang J.; Simin G.; Shur M. S.; Gaska R.

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
Appl. Phys. Lett. 78, 2781 (2001)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028;
144.
2001

Lü Jian-Qiang; Shur Michael S.

Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias
Appl. Phys. Lett. 78, 2587 (2001)
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180;
145.
2001

Tarakji A.; Simin G.; Ilinskaya N.; Hu X.; Kumar A.; Koudymov A.; Yang J.; Khan M. Asif; Shur M. S.; Gaska R.

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
Appl. Phys. Lett. 78, 2169 (2001)
Photonics and Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208;
146.
2001

Dmitriev A. P.; Kachorovskii V. Yu.; Shur M. S.

High-field transport in a dense two-dimensional electron gas in elementary semiconductors
J. Appl. Phys. 89, 3793 (2001)
A. F. Ioffe Physico-Technical Institute, 26 Polytechnicheskaya str., 194021, St. Petersburg, Russia
147.
2001

Ryzhii Victor; Shur Michael

Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
Jpn. J. Appl. Phys., Part 1 40, 546 (2001)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan
148.
2001

Shatalov M.; Chitnis A.; Adivarahan V.; Lunev A.; Zhang J.; Yang J. W.; Fareed Q.; Simin G.; Zakheim A.; Khan M. Asif; Gaska R.; Shur M. S.

Band-edge luminescence in quaternary AlInGaN light-emitting diodes
Appl. Phys. Lett. 78, 817 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
149.
2001

Gaska R.; Shur M. S.; Hu X.; Yang J. W.; Tarakji A.; Simin G.; Khan A.; Deng J.; Werner T.; Rumyantsev S.; Pala N.

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors
Appl. Phys. Lett. 78, 769 (2001)
Sensor Electronic Technology, Incorporated, Latham, New York 12110;
150.
2001

Contreras S.; Knap W.; Frayssinet E.; Sadowski M. L.; Goiran M.; Shur M.

High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction
J. Appl. Phys. 89, 1251 (2001)
Groupe d’Etude des Semiconducteurs, UMR 5650(UM2-CNRS), cc074, F-34095 Montpellier Cedex 05, France;
151.
2000

Chitnis A.; Kumar A.; Shatalov M.; Adivarahan V.; Lunev A.; Yang J. W.; Simin G.; Khan M. Asif; Gaska R.; Shur M.

High-quality p–n; junctions with quaternary AlInGaN/InGaN quantum wells
Appl. Phys. Lett. 77, 3800 (2000)
Department of EE, University of South Carolina, Columbia, South Carolina 29208;
152.
2000

Rumyantsev S. L.; Pala N.; Shur M. S.; Gaska R.; Levinshtein M. E.; Khan M. Asif; Simin G.; Hu X.; Yang J.

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
J. Appl. Phys. 88, 6726 (2000)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
153.
2000

Necliudov P. V.; Shur M. S.; Gundlach D. J.; Jackson T. N.

Modeling of organic thin film transistors of different designs
J. Appl. Phys. 88, 6594 (2000)
Rensselaer Polytechnic Institute, Department of Electrical, Computer and System Engineering, Troy, New York
154.
2000

Necliudov P. V.; Rumyantsev S. L.; Shur M. S.; Gundlach D. J.; Jackson T. N.

1/f noise in pentacene organic thin film transistors
J. Appl. Phys. 88, 5395 (2000)
Rensselaer Polytechnic Institute, Department of Electrical, Computer, and System Engineering, Troy, New York 12180-3590;
155.
2000

Zhang Jianping; Yang J.; Simin G.; Shatalov M.; Khan M. Asif; Shur M. S.; Gaska R.

Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
Appl. Phys. Lett. 77, 2668 (2000)
University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208;
156.
2000

Frayssinet E.; Knap W.; Lorenzini P.; Grandjean N.; Massies J.; Skierbiszewski C.; Suski T.; Grzegory I.; Porowski S.; Simin G.; Hu X.; Khan M. Asif; Shur M. S.; Gaska R.; Maude D.

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
Appl. Phys. Lett. 77, 2551 (2000)
High Pressure Research Center, UNIPRESS, Polish Academy of Sciences, 01142 Warsaw, Poland
157.
2000

Tamulaitis G.; Kazlauskas K.; Juršėnas S.; Žukauskas A.; Khan M. A.; Yang J. W.; Zhang J.; Simin G.; Shur M. S.; Gaska R.

Optical bandgap formation in AlInGaN alloys
Appl. Phys. Lett. 77, 2136 (2000)
Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania;
158.
2000

Ryzhii V.; Khmyrova I.; Shur M.

Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors
J. Appl. Phys. 88, 2868 (2000)
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;
159.
2000

Khan M. Asif; Hu X.; Tarakji A.; Simin G.; Yang J.; Gaska R.; Shur M. S.

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
Appl. Phys. Lett. 77, 1339 (2000)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208;
160.
2000

Adivarahan V.; Simin G.; Yang J. W.; Lunev A.; Khan M. Asif; Pala N.; Shur M.; Gaska R.

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors
Appl. Phys. Lett. 77, 863 (2000)
Department of ECE, University of South Carolina, Columbia, South Carolina 29208;
161.
2000

Rimeika R.; Ciplys D.; Gaska R.; Yang J. W.; Khan M. A.; Shur M. S.; Towe E.

Diffraction of guided optical waves by surface acoustic waves in GaN
Appl. Phys. Lett. 77, 480 (2000)
Laboratory of Physical Acoustics, Vilnius University, 2040 Vilnius, Lithuania;
162.
2000

Gaska R.; Shur M. S.; Bykhovski A. D.; Yang J. W.; Khan M. A.; Kaminski V. V.; Soloviov S. M.

Piezoresistive effect in metal–semiconductor–metal structures on ;p-type GaN
Appl. Phys. Lett. 76, 3956 (2000)
Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110;
163.
2000

Asif Khan M.; Yang J. W.; Knap W.; Frayssinet E.; Hu X.; Simin G.; Prystawko P.; Leszczynski M.; Grzegory I.; Porowski S.; Gaska R.; Shur M. S.; Beaumont B.; Teisseire M.; Neu G.

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
Appl. Phys. Lett. 76, 3807 (2000)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208;
164.
2000

Shur M. S.; Bykhovski A. D.; Gaska R.; Khan M. A.; Yang J. W.

AlGaN–GaN–AlInGaN induced base transistor
Appl. Phys. Lett. 76, 3298 (2000)
Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180;
165.
2000

Shur M. S.; Bykhovski A. D.; Gaska R.; Yang J. W.; Simin G.; Khan M. A.

Accumulation hole layer in p-GaN/AlGaN heterostructures
Appl. Phys. Lett. 76, 3061 (2000)
Center for Integrated Electronics and Electronic Manufacturing and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180;
166.
2000

Juršėnas S.; Kurilčik G.; Tamulaitis G.; Žukauskas A.; Gaska R.; Shur M. S.; Khan M. A.; Yang J. W.

Dynamic behavior of hot-electron–hole plasma in highly excited GaN epilayers
Appl. Phys. Lett. 76, 2388 (2000)
Institute of MSAR, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania;
167.
2000

Ciplys D.; Gaska R.; Shur M. S.; Rimeika R.; Yang J. W.; Khan M. Asif

Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire
Appl. Phys. Lett. 76, 2232 (2000)
CIEEM and Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180;
168.
2000

Khan M. Asif; Yang J. W.; Simin G.; Gaska R.; Shur M. S.; zur Loye Hans-Conrad; Tamulaitis G.; Zukauskas A.; Smith David J.; Chandrasekhar D.; Bicknell-Tassius R.

Lattice and energy band engineering in AlInGaN/GaN heterostructures
Appl. Phys. Lett. 76, 1161 (2000)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208;
169.
2000

Rumyantsev S.; Levinshtein M. E.; Gaska R.; Shur M. S.; Yang J. W.; Khan M. A.

Low-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates
J. Appl. Phys. 87, 1849 (2000)
A. F. Ioffe Institute of Physics and Technology, St. Petersburg, 194021 Russia
170.
1999

Knap W.; Frayssinet E.; Sadowski M. L.; Skierbiszewski C.; Maude D.; Falko V.; Khan M. Asif; Shur M. S.

Effective g^*; factor of two-dimensional electrons in GaN/AlGaN heterojunctions
Appl. Phys. Lett. 75, 3156 (1999)
G.E.S.—Université Montpellier 2 and CNRS-UMR5650, 34095 Montpellier, France;
171.
1999

Levinshtein M. E.; Rumyantsev S. L.; Look D. C.; Molnar R. J.; Khan M. Asif; Simin G.; Adivarahan V.; Shur M. S.

Low-frequency noise in n-GaN with high electron mobility
J. Appl. Phys. 86, 5075 (1999)
Solid State Electronics Division, The Ioffe Physicotechnical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia
172.
1999

Khan M. Asif; Yang J. W.; Simin G.; Gaska R.; Shur M. S.; Bykhovski A. D.

Piezoelectric doping in AlInGaN/GaN heterostructures
Appl. Phys. Lett. 75, 2806 (1999)
Department of ECE, University of South Carolina, Columbia, South Carolina 29208;
173.
1999

Tamulaitis G.; Žukauskas A.; Yang J. W.; Khan M. A.; Shur M. S.; Gaska R.

Heating of photogenerated electrons and holes in highly excited GaN epilayers
Appl. Phys. Lett. 75, 2277 (1999)
Institute of Materials Science and Applied Research, Vilnius University, Naugarduko 24, 2006 Vilnius, Lithuania
174.
1999

Foutz Brian E.; Shur Michael S.; O'Leary Stephen K.; Eastman Lester F.

Transient electron transport in wurtzite GaN, InN, and AlN
J. Appl. Phys. 85, 7727 (1999)
School of Electrical Engineering, Cornell University, Ithaca, New York 14853;
175.
1999

Gaska R.; Bykhovski A. D.; Shur M. S.; Kaminskii V. V.; Soloviov S. M.

Piezoresistive effect in AlN/GaN short range superlattice structures
J. Appl. Phys. 85, 6932 (1999)
Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
176.
1999

Gaska R.; Fjeldly T. A.; Shur M. S.; Bykhovski A. D.

Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications
J. Appl. Phys. 85, 3009 (1999)
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55449;
177.
1999

Gaska R.; Bykhovski A. D.; Orlov A. O.; Shur M. S.; Snider G. L.

Electron mobility in modulation-doped AlGaN–GaN heterostructures
Appl. Phys. Lett. 74, 287 (1999)
APA Optics, Inc., 2950 North East 84th Lane, Blaine, Minnesota 55449;
178.
1998

Bykhovski A. D.; Gaska R.; Shur M. S.

Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors
Appl. Phys. Lett. 73, 3577 (1998)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442;
179.
1998

Dyakonov Michael; Shur Michael S.

Consequences of space dependence of effective mass in heterostructures
J. Appl. Phys. 84, 3726 (1998)
CIEEM and ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
180.
1998

Levinshtein M. E.; Rumyantsev S. L.; Gaska R.; Yang J. W.; Shur M. S.

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
Appl. Phys. Lett. 73, 1089 (1998)
Solid State Electronics Division, The Ioffe Physical-Technical, Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia
181.
1998

Levinshtein M. E.; Yang J. W.; Pascal F.; Contreras S.; Knap W.; Rumyantsev S. L.; Gaska R.; Shur M. S.

Low-frequency noise in GaN/GaAlN heterojunctions
Appl. Phys. Lett. 72, 3053 (1998)
Centre d’Electronique et de Micro-Optoelectronique de Montpellier, CC 084, Universite de Montpellier II, 34095 Montpellier, France;
182.
1998

Dyakonova N.; Dickens A.; Shur M. S.; Gaska R.; Yang J. W.

Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors
Appl. Phys. Lett. 72, 2562 (1998)
A. F. Ioffe Institute of Physics and Technology, St. Petersburg, Russia
183.
1998

Gaska R.; Yang J. W.; Osinsky A.; Chen Q.; Khan M. Asif; Orlov A. O.; Snider G. L.; Shur M. S.

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
Appl. Phys. Lett. 72, 707 (1998)
APA Optics, Inc., Blaine, Minnesota 55449;
184.
1998

O'Leary Stephen K.; Foutz Brian E.; Shur Michael S.; Bhapkar Udayan V.; Eastman Lester F.

Electron transport in wurtzite indium nitride
J. Appl. Phys. 83, 826 (1998)
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
185.
1998

Gaska R.; Yang J. W.; Bykhovski A. D.; Shur M. S.; Kaminski V. V.; Soloviov S. M.

The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures
Appl. Phys. Lett. 72, 64 (1998)
APA Optics, Inc., Blaine, Minnesota 55449
186.
1997

Gaska R.; Yang J. W.; Bykhovski A. D.; Shur M. S.; Kaminskii V. V.; Soloviov S.

Piezoresistive effect in GaN–AlN–GaN structures
Appl. Phys. Lett. 71, 3817 (1997)
APA Optics, Inc., Blaine, Minnesota 55449
187.
1997

Gaska R.; Yang J. W.; Osinsky A.; Bykhovski A. D.; Shur M. S.

Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
Appl. Phys. Lett. 71, 3673 (1997)
APA Optics, Inc., Blaine, Minnesota 55449
188.
1997

Bhapkar Udayan V.; Shur Michael S.

Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
J. Appl. Phys. 82, 1649 (1997)
Naval Surface Warfare Center, Technology and Photonic Systems Branch (T44), Dahlgren, Virginia 22448-5100
189.
1997

Shur Michael S.; Slade Holly C.; Jacunski Mark D.; Owusu Albert A.; Ytterdal Trond

SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors
J. Electrochem. Soc. 144, 2833 (1997)
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180‐3590;
190.
1997

Sun C. J.; Zubair Anwar M.; Chen Q.; Yang J. W.; Asif Khan M.; Shur M. S.; Bykhovski A. D.; Liliental-Weber Z.; Kisielowski C.; Smith M.; Lin J. Y.; Xiang H. X.

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes
Appl. Phys. Lett. 70, 2978 (1997)
APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434
191.
1997

Foutz B. E.; Eastman L. F.; Bhapkar U. V.; Shur M. S.

Comparison of high field electron transport in GaN and GaAs
Appl. Phys. Lett. 70, 2849 (1997)
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
192.
1997

Bykhovski A. D.; Gelmont B. L.; Shur M. S.

Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
J. Appl. Phys. 81, 6332 (1997)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442
193.
1997

Knap W.; Contreras S.; Alause H.; Skierbiszewski C.; Camassel J.; Dyakonov M.; Robert J. L.; Yang J.; Chen Q.; Asif Khan M.; Sadowski M. L.; Huant S.; Yang F. H.; Goiran M.; Leotin J.; Shur M. S.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface
Appl. Phys. Lett. 70, 2123 (1997)
G.E.S.-Universite Montpellier 2 and CNRS-UMR357, 34095 Montpellier, France
194.
1997

Ytterdal T.; Shur M. S.; Hurt M.; Peatman W. C. B.

Enhancement of Schottky barrier height in heterodimensional metal-semiconductor contacts
Appl. Phys. Lett. 70, 441 (1997)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442
195.
1997

Khan Mohamed A.; Shur Michael S.

Recent progress in AlGaN/GaN-based optoelectronic devices
Proc. SPIE Int. Soc. Opt. Eng. 3006, 154 (1997)
APA Optics, Inc. (USA)
196.
1996

Bykhovski A. D.; Kaminski V. V.; Shur M. S.; Chen Q. C.; Khan M. A.

Pyroelectricity in gallium nitride thin films
Appl. Phys. Lett. 69, 3254 (1996)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
197.
1996

Weiser K.; Dahan F.; Schacham S. E.; Shur M.; Towe E.; Park H.

Laser beam interference effects on the photovoltage of a p‐;n junction diode
J. Appl. Phys. 80, 5459 (1996)
Department of Electrical Engineering, Technion, Haifa, Israel
198.
1996

Slade H. C.; Shur M. S.; Deane S. C.; Hack M.

Below threshold conduction in a‐Si;H thin film transistors with and without a silicon nitride passivating layer
Appl. Phys. Lett. 69, 2560 (1996)
Rensselaer Polytechnic Institute, Troy, New York 12180‐3590;
199.
1996

Bykhovski A. D.; Shur M. S.

Surface reconstruction of zinc‐blende GaN
Appl. Phys. Lett. 69, 2397 (1996)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
200.
1996

Chen Q.; Asif Khan M.; Yang J. W.; Sun C. J.; Shur M. S.; Park H.

High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
Appl. Phys. Lett. 69, 794 (1996)
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55449
201.
1996

Levinshtein M. E.; Rumyantsev S.-L.; Simin G. S.; Park H.; Peatman W. C. B.; Shur M. S.

Low frequency noise in two‐dimensional metal‐semiconductor field effect transistor
Appl. Phys. Lett. 68, 3138 (1996)
A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg, Russia
202.
1996

Asif Khan M.; Shur M. S.; Chen Q.

Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
Appl. Phys. Lett. 68, 3022 (1996)
APA Optics, APA Inc., 2950 Northeast 84th Lane, Blaine, Minnesota 55449
203.
1996

Bykhovski A. D.; Kaminski V. V.; Shur M. S.; Chen Q. C.; Khan M. A.

Piezoresistive effect in wurtzite n‐type GaN
Appl. Phys. Lett. 68, 818 (1996)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
204.
1996

Khan M. Asif; Chen Q.; Sun C. J.; Yang J. W.; Blasingame M.; Shur M. S.; Park H.

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
Appl. Phys. Lett. 68, 514 (1996)
APA Optics, Inc., Blaine, Minnesota 55449
205.
1995

Bykhovski A. D.; Gelmont B. L.; Shur M. S.

Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures
J. Appl. Phys. 78, 3691 (1995)
A. F. Ioffe Physico‐Technical Institute, 194021 St. Petersburg, Russia;
206.
1995

Asif Khan M.; Chen Q.; Sun C. J.; Shur M.; Gelmont B.

Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 1429 (1995)
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55449
207.
1995

Dyakonov M. I.; Shur M. S.

Two dimensional electronic flute
Appl. Phys. Lett. 67, 1137 (1995)
A. F. Ioffe Physico‐Technical Institute, St. Petersburg, 194021, Russia;
208.
1995

Gelmont B.; Shur M. S.

Hall factor for ionized impurity scattering
J. Appl. Phys. 78, 2846 (1995)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
209.
1995

Dyakonov M. I.; Shur M. S.

Choking of electron flow: A mechanism of current saturation in field‐effect transistors
Phys. Rev. B 51, 14341 (1995)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
210.
1995

Shur Michael S.; Khan Mohamed A.

Optoelectronic GaN-based field effect transistors
Proc. SPIE Int. Soc. Opt. Eng. 2397, 294 (1995)
Univ. of Virginia (USA)
211.
1995

Khan Mohamed A.; Chen Q.; Sun C. J.; Shur Michael S.; MacMillan M. F.; Devaty Robert P.; Choyke W. J.

Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
Proc. SPIE Int. Soc. Opt. Eng. 2397, 283 (1995)
APA Optics, Inc. (USA)
212.
1995

Khan M. Asif; Shur Michael S.; Kuznia John N.; Chen Q.; Burm Jin; Schaff William

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
Appl. Phys. Lett. 66, 1083 (1995)
APA Optics, APA Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55449
213.
1995

Bykhovski A.; Gelmont B.; Shur M.; Khan A.

Current‐voltage characteristics of strained piezoelectric structures
J. Appl. Phys. 77, 1616 (1995)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
214.
1995

Gelmont B. L.; Shur M.; Stroscio M.

Polar optical‐phonon scattering in three‐ and two‐dimensional electron gases
J. Appl. Phys. 77, 657 (1995)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
215.
1994

Asif Khan M.; Kuznia J. N.; Olson D. T.; Schaff W. J.; Burm J. W.; Shur M. S.

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
Appl. Phys. Lett. 65, 1121 (1994)
APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434
216.
1993

Bykhovski Alexei; Gelmont Boris; Shur Michael

The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
J. Appl. Phys. 74, 6734 (1993)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
217.
1993

Bykhovski Alexei; Gelmont Boris; Shur Michael

Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation
Appl. Phys. Lett. 63, 2243 (1993)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
218.
1993

Dyakonov Michael; Shur Michael

Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current
Phys. Rev. Lett. 71, 2465 (1993)
A. F. Ioffe Physico‐Technical Institute, 194∥021 St. Petersburg, Russia;
219.
1993

Tan Genlin; Xu Jing Ming; Shur Michael S.

GaAs/AlGaAs double-heterojunction lateral p-i-n ridge waveguide laser
Opt. Eng. 32, 2042 (1993)
Univ. of Toronto (USA)
220.
1993

Gelmont B.; Kim K.; Shur M.

Monte Carlo simulation of electron transport in gallium nitride
J. Appl. Phys. 74, 1818 (1993)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
221.
1993

Levinshtein M. E.; Simin G. S.; Shur Michael

Getting to Know Semiconductors
Am. J. Phys. 61, 765 (1993)
222.
1993

Gelmont B. L.; Peatman W.; Shur M.

Heterodimensional Schottky metal–two‐dimensional electron gas interfaces
J. Vac. Sci. Technol. B 11, 1670 (1993)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
223.
1992

Gelmont Boris; Kim Ki-Sang; Shur Michael

Theory of impact ionization and Auger recombination in Hg1-;xCdxTe
Phys. Rev. Lett. 69, 1280 (1992)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903‐2442;
224.
1992

Gelmont Boris; Lund Bjornar; Kim Ki-Sang; Jensen Geir U.; Shur Michael; Fjeldly Tor A.

Monte Carlo simulation of electron transport in mercury cadmium telluride
J. Appl. Phys. 71, 4977 (1992)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903
225.
1990

Shur Michael; Singh Jasprit

Physics of Semiconductor Devices
Phys. Today 43, 98 (1990)
226.
1990

Lee Kwyro; Shur Michael S.

P heterostructure field effect transistors
Proc. SPIE Int. Soc. Opt. Eng. 1288, 269 (1990)
Korea Advanced Institute of Science and Technology (South Korea)
227.
1990

Brudevoll T.; Fjeldly T. A.; Baek J.; Shur M. S.

Scattering rates for holes near the valence‐band edge in semiconductors
J. Appl. Phys. 67, 7373 (1990)
Department of Electrical Engineering and Computer Science, Norwegian Institute of Technology, University of Trondheim, N‐7034, Trondheim, Norway;
228.
1990

Chen You-jun; Dahlberg E. Dan; Shur M.; Akinwande A.

Effect of a magnetic field on the gate current in heterostructure field‐effect transistors
Appl. Phys. Lett. 56, 2028 (1990)
School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455
229.
1989

Shur Michael; Hack Michael; Shaw John G.; Martin R. A.

Capacitance‐voltage characteristics of amorphous silicon thin‐film transistors
J. Appl. Phys. 66, 3381 (1989)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22901
230.
1989

Shur Michael; Hack Michael; Shaw John G.

A new analytic model for amorphous silicon thin‐film transistors
J. Appl. Phys. 66, 3371 (1989)
Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22901
231.
1989

Costa Julio; Peczalski Andrzej; Shur Michael

Monte Carlo studies of electronic transport in compensated InP
J. Appl. Phys. 66, 674 (1989)
Systems and Research Center, Honeywell, Minneapolis, Minnesota 55418
232.
1989

Costa Julio; Peczalski Andrzej; Shur Michael

Monte Carlo studies of steady‐state electronic transport in compensated In;0.53Ga0.47As
J. Appl. Phys. 65, 5205 (1989)
Systems and Research Center, Honeywell, Minneapolis, Minnesota 55418
233.
1989

Grinberg A. A.; Shur M.

A new analytical model for heterostructure field‐effect transistors
J. Appl. Phys. 65, 2116 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
234.
1989

Hack M.; Shur M.; Tsai C. C.

Amorphous silicon photoconductive diode
Appl. Phys. Lett. 54, 96 (1989)
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
235.
1989

Shur Michael

Split‐gate field‐effect transistor
Appl. Phys. Lett. 54, 162 (1989)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
236.
1988

Xu Jingming; Shur Michael

Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. ;52, 922 (1988)]
Appl. Phys. Lett. 53, 1219 (1988)
Department of Electrical Engineering, University of Toronto, Toronto M5S 1A4, Canada;
237.
1988

Ruden P. P.; Han C. J.; Shur M.

Gate current of modulation‐doped field‐effect transistors
J. Appl. Phys. 64, 1541 (1988)
Honeywell Physical Sciences Center, Bloomington, Minnesota 55420
238.
1988

Xu Jingming; Shur Michael

Temperature dependence of electron mobility and peak velocity in compensated GaAs
Appl. Phys. Lett. 52, 922 (1988)
Department of Electrical Engineering, University of Toronto, Toronto M5S 1A4, Canada
239.
1987

Xu Jingming; Shur Michael

Ballistic transport in hot‐electron transistors
J. Appl. Phys. 62, 3816 (1987)
Department of Electrical Engineering University of Minnesota, Minneapolis, Minnesota 55455
240.
1987

Xu J.; Shur M.; Hack M.

Amplification of bipolar current flow by charge induced from an insulated gate electrode
J. Appl. Phys. 62, 1108 (1987)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
241.
1987

Xu Jingming; Shur Michael

Velocity‐field characteristics with two maxima in compensated GaAs
Phys. Rev. B 36, 1352 (1987)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
242.
1987

Hack M.; Shur M.

Analysis of stability of amorphous silicon solar cells
AIP Conf. Proc. 157, 134 (1987)
Xerox Palo Alto Research Center, Palo Alto, CA 94304
243.
1987

Shur M. S.; Abrokwah J. K.; Daniels R. R.; Arch D. K.

Mobility enhancement in highly doped GaAs quantum wells
J. Appl. Phys. 61, 1643 (1987)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
244.
1987

Arch D. K.; Shur M.; Abrokwah J. K.; Daniels R. R.

Superlattice conduction in superlattice modulation‐doped field‐effect transistors
J. Appl. Phys. 61, 1503 (1987)
Physical Sciences Center, Honeywell Inc., Bloomington, Minnesota 55420
245.
1986

Hack M.; Shur M.

Limitations to the open circuit voltage of amorphous silicon solar cells
Appl. Phys. Lett. 49, 1432 (1986)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
246.
1986

Xu Jingming; Bernhardt Bruce A.; Shur Michael; Chen Chung-Hsu; Peczalski Andrzej

Electron mobility and velocity in compensated GaAs
Appl. Phys. Lett. 49, 342 (1986)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
247.
1986

Hack M.; Shur M.; Czubatyj W.

Double‐injection field‐effect transistor; A new type of solid‐state device
Appl. Phys. Lett. 48, 1386 (1986)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
248.
1986

Shur Michael; Hyun Choong; Hack Michael

New high field‐effect mobility regimes of amorphous silicon alloy thin‐film transistor operation
J. Appl. Phys. 59, 2488 (1986)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
249.
1986

Hack M.; Shur M.

Implications of light‐induced defects on the performance of amorphous silicon alloy ;p‐;i‐;n solar cells
J. Appl. Phys. 59, 2222 (1986)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
250.
1986

Shur Michael; Hack Michael

Determination of density of localized states in amorphous silicon alloys from the low field conductance of thin n‐;i‐;n diodes
J. Appl. Phys. 59, 803 (1986)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
251.
1985

Shur Michael

Spill‐over effects in planar doped barrier devices
Appl. Phys. Lett. 47, 869 (1985)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
252.
1985

Hack M.; Shur M.

Analysis of light‐induced degradation in amorphous silicon alloy ;p‐;i‐;n solar cells
J. Appl. Phys. 58, 1656 (1985)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
253.
1985

Hack M.; Shur M.

Physics of amorphous silicon alloy p‐;i‐;n solar cells
J. Appl. Phys. 58, 997 (1985)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
254.
1985

Grinberg A. A.; Shur M. S.

Effect of image charges on impurity scattering of two‐dimensional electron gas in AlGaAs/GaAs
J. Appl. Phys. 58, 382 (1985)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
255.
1985

Grinberg A. A.; Shur M. S.

Modulation‐doped structures with graded heterointerfaces
J. Appl. Phys. 57, 1242 (1985)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
256.
1984

Hack M.; Guha S.; Shur M.

Photoconductivity and recombination in amorphous silicon alloys
Phys. Rev. B 30, 6991 (1984)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
257.
1984

Hyun C.; Shur M. S.; Hack M.; Yaniv Z.; Cannella V.

Above threshold characteristics of amorphous silicon alloy thin‐film transistors
Appl. Phys. Lett. 45, 1202 (1984)
University of Minnesota, Electrical Engineering Department, Minneapolis, Minnesota 55414
258.
1984

Hack M.; Shur M.

Erratum: Theoretical modeling of amorphous silicon‐based alloy ;p‐;i‐;n solar cells [J. Appl. Phys. ;54, 5858 (1983)]
J. Appl. Phys. 56, 3026 (1984)
Energy Conversion Devices Incorporated, Troy, Michigan 48084
259.
1984

Hack M.; Guha S.; Shur M.

Photoconductivity and recombination in amorphous silicon alloys
AIP Conf. Proc. 120, 40 (1984)
Energy Conversion Devices, Inc., Troy, Michigan 48084
260.
1984

Grinberg A. A.; Shur M. S.

Density of two‐dimensional electron gas in modulation‐doped structure with graded interface
Appl. Phys. Lett. 45, 573 (1984)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
261.
1984

Hack M.; Guha S.; Shur M.

Dependence of photoconductivity on the dark Fermi level position in amorphous silicon alloys
Appl. Phys. Lett. 45, 467 (1984)
Energy Conversion Devices, Incorporated, 1675 West Maple Road, Troy, Michigan 48084
262.
1984

Adler D.; Shur M. S.; Silver M.; Ovshinsky S. R.

Reply to ‘‘Comment on ‘Threshold switching in chalcogenide‐glass thin films’ ’’
J. Appl. Phys. 56, 579 (1984)
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
263.
1984

Shur M. S.; Hack M.; Hyun C.

Flat‐band voltage and surface states in amorphous silicon‐based alloy field‐effect transistors
J. Appl. Phys. 56, 382 (1984)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
264.
1984

Hack M.; Shur M. S.

Theoretical studies of the electric field distribution and open‐circuit voltage of amorphous silicon‐based alloy ;p‐;i‐;n solar cells
J. Appl. Phys. 55, 4413 (1984)
Energy Conversion Devices, Inc., Troy, Michigan 48084
265.
1984

Shur M.; Hack M.

Physics of amorphous silicon based alloy field‐effect transistors
J. Appl. Phys. 55, 3831 (1984)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
266.
1984

Hack M.; Shur M.

Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys
J. Appl. Phys. 55, 2967 (1984)
Energy Conversion Devices, Inc., Troy, Michigan 48084
267.
1984

Lee Kwyro; Shur Michael; Drummond Timothy J.; Morkoç Hadis

Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)
J. Vac. Sci. Technol. B 2, 113 (1984)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
268.
1984

Drummond T. J.; Fischer R.; Arnold D.; Morkoç H.; Shur M. S.

Current‐voltage and capacitance‐voltage characteristics of a metal/Al;0.5Ga0.5As/GaAs capacitor
Appl. Phys. Lett. 44, 214 (1984)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
269.
1983

Lee K.; Shur M. S.; Drummond T. J.; Morkoç H.

Low field mobility of 2‐;d electron gas in modulation doped AlxGa1-;xAs/GaAs layers
J. Appl. Phys. 54, 6432 (1983)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
270.
1983

Hack M.; Shur M.

Theoretical modeling of amorphous silicon‐based alloy ;p‐;i‐;n solar cells
J. Appl. Phys. 54, 5858 (1983)
Energy Conversion Devices Incorporated, Troy, Michigan 48084
271.
1983

Klem J.; Masselink W. T.; Arnold D.; Fischer R.; Drummond T. J.; Morkoç H.; Lee K.; Shur M. S.

Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature
J. Appl. Phys. 54, 5214 (1983)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, Illinois 61801
272.
1983

Lee Kwyro; Shur Michael S.

Impedance of thin semiconductor films in low electric field
J. Appl. Phys. 54, 4028 (1983)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
273.
1983

Valois A. J.; Robinson G. Y.; Lee K.; Shur M. S.

Temperature dependence of the I–;V characteristics of modulation‐doped FETs
J. Vac. Sci. Technol. B 1, 190 (1983)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
274.
1983

Lee K.; Shur M. S.; Drummond T. J.; Su S. L.; Lyons W. G.; Fischer R.; Morkoç H.

Design and fabrication of high transconductance modulation‐doped (Al,Ga)As/GaAs FETs
J. Vac. Sci. Technol. B 1, 186 (1983)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
275.
1983

Lee Kwyro; Shur Michael; Drummond Timothy J.; Morkoç Hadis

Electron density of the two‐dimensional electron gas in modulation doped layers
J. Appl. Phys. 54, 2093 (1983)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
276.
1983

Drummond T. J.; Fischer R.; Su S. L.; Lyons W. G.; Morkoç H.; Lee K.; Shur M. S.

Characteristics of modulation‐doped Al;xGa1-;xAl/GaAs field‐effect transistors; Effect of donor‐electron separation
Appl. Phys. Lett. 42, 262 (1983)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, 1101 West Springfield, Urbana, Illinois 61801
277.
1982

Hack M.; McGill J.; Czubatyj W.; Singh R.; Shur M.; Madan A.

Minority‐carrier diffusion lengths in amorphous silicon‐based alloys
J. Appl. Phys. 53, 6270 (1982)
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
278.
1982

Hyun C. H.; Shur M. S.; Madan A.

Determination of the density of localized states in fluorinated a‐Si using deep level transient spectroscopy
Appl. Phys. Lett. 41, 178 (1982)
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
279.
1982

Madan A.; Czubatyj W.; Yang J.; Shur M. S.; Shaw M. P.

Observation of two modes of current transport through phosphorus‐doped amorphous hydrogenated silicon Schottky barriers
Appl. Phys. Lett. 40, 234 (1982)
Energy Conversion Devices, Incorporated, 1675 W. Maple Road, Troy, Michigan 48084
280.
1980

Adler D.; Shur M. S.; Silver M.; Ovshinsky S. R.

Threshold switching in chalcogenide‐glass thin films
J. Appl. Phys. 51, 3289 (1980)
Department of Electrical Engineering and Computer Science, and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Co-authors

Co-publications
98

Gaska, Remis
58

Khan, M. Asif
44

Rumyantsev, Sergey L.
43

Simin, Grigory S.
37

Yang, JW
26

Yang, Jeffrey
26

Hu, X
23

Tamulaitis, Gintautas
22

Knap, W
22

Levinshtein, Michael E.
20

Bykhovski, AD
17

Ryzhii, Victor
15

Shatalov, Max
14

Zhang, Jianping
14

Pala, N