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Charache, Greg W.

Computed

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Research Profile

Latest Publications

1.
2003

Wang C. A.; Vineis C. J.; Choi H. K.; Connors M. K.; Huang R. K.; Danielson L. R.; Nichols G.; Charache G. W.; Donetsky D.; Anikeev S.; Belenky G.

Lattice‐Matched GaInAsSb/AlGaAsSb/GaSb Materials for Thermophotovoltaic Devices
AIP Conf. Proc. 653, 324 (2003)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420‐9108;
2.
2001

Borrego J. M.; Saroop S.; Gutmann R. J.; Charache G. W.; Donovan T.; Baldasaro P. F.; Wang C. A.

Photon recycling and recombination processes in 0.53 eV p-type InGaAsSb
J. Appl. Phys. 89, 3753 (2001)
Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
3.
2001

Baldasaro P. F.; Charache G. W.; DePoy D. M.; Ballinger C. T.; Donovan T.; Raynolds J. E.; Borrego J. M.

Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs
J. Appl. Phys. 89, 3319 (2001)
Lockheed Martin Inc., Schenectady, New York 12301-1072;

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All Publications

1.
2003

Wang C. A.; Vineis C. J.; Choi H. K.; Connors M. K.; Huang R. K.; Danielson L. R.; Nichols G.; Charache G. W.; Donetsky D.; Anikeev S.; Belenky G.

Lattice‐Matched GaInAsSb/AlGaAsSb/GaSb Materials for Thermophotovoltaic Devices
AIP Conf. Proc. 653, 324 (2003)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420‐9108;
2.
2001

Borrego J. M.; Saroop S.; Gutmann R. J.; Charache G. W.; Donovan T.; Baldasaro P. F.; Wang C. A.

Photon recycling and recombination processes in 0.53 eV p-type InGaAsSb
J. Appl. Phys. 89, 3753 (2001)
Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
3.
2001

Baldasaro P. F.; Charache G. W.; DePoy D. M.; Ballinger C. T.; Donovan T.; Raynolds J. E.; Borrego J. M.

Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs
J. Appl. Phys. 89, 3319 (2001)
Lockheed Martin Inc., Schenectady, New York 12301-1072;
4.
2000

Muñoz M.; Wang C. A.; Freeouf J. L.; Pollak Fred H.; Wei K.; Charache G. W.

Optical constants of Ga1-x;InxAsySb1-y; lattice matched to GaSb (001); Experiment and modeling
J. Appl. Phys. 87, 1780 (2000)
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210;
5.
1999

Muñoz M.; Wei K.; Pollak Fred H.; Freeouf J. L.; Charache G. W.

Spectral ellipsometry of GaSb: Experiment and modeling
Phys. Rev. B 60, 8105 (1999)
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210;
6.
1999

Wang C. A.; Choi H. K.; Ransom S. L.; Charache G. W.; Danielson L. R.; DePoy D. M.

High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
Appl. Phys. Lett. 75, 1305 (1999)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108;
7.
1999

Saroop Sudesh; Charache Greg W.; Gutmann Ronald J.; Borrego Jose M.; Wang Christine A.

Recombination processes in doubly capped antimonide-based quaternary thin films
J. Appl. Phys. 86, 1527 (1999)
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180;
8.
1999

Ehsani H.; Bhat I.; Gutmann R. J.; Charache G.; Freeman M.

Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates
J. Appl. Phys. 86, 835 (1999)
Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics and Electrical Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
9.
1999

Charache G. W.; DePoy D. M.; Raynolds J. E.; Baldasaro P. F.; Miyano K. E.; Holden T.; Pollak F. H.; Sharps P. R.; Timmons M. L.; Geller C. B.; Mannstadt W.; Asahi R.; Freeman A. J.; Wolf W.

Moss–Burstein and plasma reflection characteristics of heavily doped ;n-type InxGa1-x;As and InPyAs1-y;
J. Appl. Phys. 86, 452 (1999)
Lockheed Martin, Inc., Schenectady, New York 12301-1072;
10.
1999

Chen Y-C.; Bucklen V.; Freeman M.; Cardines R. P.; Nichols G.; Sanders P.; Charache G.; Rajan K.

Phase stability in GaxIn(1-x);AsySb(1-y);/GaSb heterostructures
AIP Conf. Proc. 460, 535 (1999)
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
11.
1999

Raynolds J. E.; Geller C. B.; Charache G. W.; Holden T.; Pollak F. H.; Maanstadt W.; Asahi R.; Freeman A. J.

Theoretical prediction of the plasma frequency and moss-burstein shifts for degenerately doped InAs, In1-x;GaxAs and InP1-y;Asy
AIP Conf. Proc. 460, 457 (1999)
Lockheed Martin Corp., P.O. Box 1072, Schenectady, New York
12.
1999

Wojtczuk S.; Colter P.; Charache G.; DePoy D.

Performance status of 0.55eV InGaAs thermophotovoltaic cells
AIP Conf. Proc. 460, 417 (1999)
Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730-2396;
13.
1999

Holden Todd; Pollak Fred H.; Freeouf J. L.; Charache G. W.; Raynolds J. E.

The optical constants of n- and p-doped In0.66Ga0.34As on InP (001) including the Burstein-Moss shift: Experiment and modeling
AIP Conf. Proc. 460, 39 (1999)
Physics Department and NY State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, New York 11210;
14.
1999

Clevenger M. B.; Murray C. S.; Ringel S. A.; Sacks R. N.; Qin L.; Charache G. W.; Depoy D. M.

Optical properties of thin semiconductor device structures with reflective back-surface layers
AIP Conf. Proc. 460, 327 (1999)
Bettis Atomic Power Laboratory, West Mifflin, Pennsylvania 15122;
15.
1999

Danielson L. R.; Parrington J. R.; Charache G. W.; Nichols G. J.; Depoy D. M.

Measurement techniques for single junction thermophotovoltaic cells
AIP Conf. Proc. 460, 317 (1999)
Bin 103, Lockheed Martin, Inc., 2401 River Road, Niskayuna, New York 12309;
16.
1999

Saroop Sudesh; Borrego Jose M.; Gutmann Ronald J.; Dutta Partha S.; Ostrogorsky Aleksander G.; Charache Greg W.

RF photoreflectance characterization of binary and quasi-binary substrates and antimonide-based TPV devices
AIP Conf. Proc. 460, 289 (1999)
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180;
17.
1999

Wang C. A.; Choi H. K.; Oakley D. C.; Charache G. W.

Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaic devices
AIP Conf. Proc. 460, 256 (1999)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108;
18.
1999

Ballinger C. T.; Charache G. W.; Murray C. S.

Monte Carlo analysis of a monolithic interconnected module with a back surface reflector
AIP Conf. Proc. 460, 161 (1999)
Lockheed Martin Corporation, Schenectady, New York
19.
1999

Charache Greg W.

Session 4: GaSb-related materials and devices
AIP Conf. Proc. 460, 10 (1999)
Lockheed Martin, Corp.
20.
1999

Charache G. W.; Baldasaro P. F.; Danielson L. R.; DePoy D. M.; Freeman M. J.; Wang C. A.; Choi H. K.; Garbuzov D. Z.; Martinelli R. U.; Khalfin V.; Saroop S.; Borrego J. M.; Gutmann R. J.

InGaAsSb thermophotovoltaic diode: Physics evaluation
J. Appl. Phys. 85, 2247 (1999)
Lockheed-Martin, Incorporated, Schenectady, New York 12301-1072;
21.
1998

Garbuzov Dmitri Z.; Martinelli Ramon U.; Khalfin Victor; Lee Hao; Morris Nancy A.; Taylor Gordon C.; Connolly John C.; Charache Greg W.; DePoy David M.

A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells
AIP Conf. Proc. 420, 1400 (1998)
Sarnoff Corporation, 201 Washington Rd., Princeton, New Jersey 08543-5300;
22.
1997

Choi H. K.; Wang C. A.; Turner G. W.; Manfra M. J.; Spears D. L.; Charache G. W.; Danielson L. R.; Depoy D. M.

High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window
Appl. Phys. Lett. 71, 3758 (1997)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108
23.
1997

Hitchcock C.; Gutmann R.; Borrego J.; Ehsani H.; Bhat I.; Freeman M.; Charache G.

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization
AIP Conf. Proc. 401, 89 (1997)
Center for Integrated Electronics and Electronics Manufacturing, and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
24.
1997

Wang C. A.; Choi H. K.; Turner G. W.; Spears D. L.; Manfra M. J.; Charache G. W.

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices
AIP Conf. Proc. 401, 75 (1997)
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108
25.
1997

Ehsani H.; Bhat I.; Hitchcock C.; Gutmann R.; Charache G.; Freeman M.

Growth and characterization of In0.2Ga0.8Sb device structures using metalorganic vapor phase epitaxy
AIP Conf. Proc. 401, 65 (1997)
Department of Electrical, Computer and Systems Engineering, Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
26.
1997

Zierak M.; Borrego J. M.; Bhat I.; Gutmann R. J.; Charache G.

Modeling of InGaSb thermophotovoltaic cells and materials
AIP Conf. Proc. 401, 55 (1997)
Center for Integrated Electronics and Electronic Manufacturing, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
27.
1997

Charache GW; DePoy DM; Egley JL; Dziendziel RJ; Freeman MJ; Baldasaro PF; Campbell BC; Sharps PR; Timmons ML; Fahey RE; Zhang K.; Borrego JM

Electrical and optical properties of degenerately-doped n-type InxGa1-x;As
AIP Conf. Proc. 401, 215 (1997)
Lockheed Martin, Inc., Schenectady New York 12301-1072
28.
1997

Saroop S.; Borrego J. M.; Gutmann R. J.; Ehsani H.; Bhat I.; Murthy S. Dakshina; Ostrogorsky A.; Dutta P.; Freeman M.; Charache G.

RF/Microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications
AIP Conf. Proc. 401, 139 (1997)
Center for Integrated Electronics and Electronics Manufacturing, Department of Electrical, Computer, and Systems Engineering Rensselaer Polytechnic Institute, Troy, New York 12180
29.
1996

Ehsani H.; Bhat I.; Gutmann R.; Charache G.

p‐type GaSb and Ga;0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
Appl. Phys. Lett. 69, 3863 (1996)
Center for Integrated Electronics and Electronics Manufacturing and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180‐3590;
30.
1996

Charache G. W.; DePoy D. M.; Zierak M.; Borrego J. M.; Baldasaro P. F.; Parrington J. R.; Freeman M. J.; Brown E. J.; Postlethwait M. A.; Nichols G. J.

Measurement of conversion efficiency of thermophotovoltaic devices
AIP Conf. Proc. 358, 351 (1996)
Lockheed‐Martin, Inc., Schenectady, New York 12301;
31.
1996

Charache G. W.; DePoy D. M.; Baldasaro P. F.; Campbell B. C.

Thermophotovoltaic devices utilizing a back surface reflector for spectral control
AIP Conf. Proc. 358, 339 (1996)
Lockheed‐Martin, Inc., Schenectady, New York 12301;
32.
1995

Zierak M.; Borrego J.; Bhat I.; Ehsani H.; Marcy D.; Gutmann R.; Parrington J.; Charache G.; Nichols G.

Characterization of InGaAs TPV cells
AIP Conf. Proc. 321, 473 (1995)
Center for Integrated Electronics, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
33.
1995

Borrego J.; Zierak M.; Charache G.

Parameter extraction for TPV cell development
AIP Conf. Proc. 321, 371 (1995)
Center for Integrated Electronics, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180

Co-authors

Co-publications
12

Borrego, Jose M.
11

Gutmann, Ronald J.
10

Depoy, DM
9

Wang, Christine A.
6

Choi, HK
6

Baldasaro, PF
5

Saroop, Sudesh
5

Danielson, LR
5

Pollak, Fred H.
4

Raynolds, JE
3

Freeouf, JL
3

Holden, Todd
2

Donovan, T
2

Freeman, M
2

Asahi, Ryoji