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Yang, Jeffrey

Computed

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Research Profile

Latest Publications

1.
2011

Yan Baojie; Yue Guozhen; Sivec Laura; Yang Jeffrey; Guha Subhendu; Jiang Chun-Sheng

Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thin-film silicon solar cell
Appl. Phys. Lett. 99, 113512 (2011)
United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA
2.
2011

Pinos A.; Liuolia V.; Marcinkevičius S.; Yang J.; Gaska R.; Shur M. S.

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
J. Appl. Phys. 109, 113516 (2011)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
3.
2010

Pinos A.; Marcinkevičius S.; Yang J.; Gaska R.; Shatalov M.; Shur M. S.

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
J. Appl. Phys. 108, 093113 (2010)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden

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All Publications

1.
2011

Yan Baojie; Yue Guozhen; Sivec Laura; Yang Jeffrey; Guha Subhendu; Jiang Chun-Sheng

Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thin-film silicon solar cell
Appl. Phys. Lett. 99, 113512 (2011)
United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA
2.
2011

Pinos A.; Liuolia V.; Marcinkevičius S.; Yang J.; Gaska R.; Shur M. S.

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
J. Appl. Phys. 109, 113516 (2011)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
3.
2010

Pinos A.; Marcinkevičius S.; Yang J.; Gaska R.; Shatalov M.; Shur M. S.

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
J. Appl. Phys. 108, 093113 (2010)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
4.
2010

Sun W.; Shatalov M.; Deng J.; Hu X.; Yang J.; Lunev A.; Bilenko Y.; Shur M.; Gaska R.

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
Appl. Phys. Lett. 96, 061102 (2010)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA
5.
2009

Yue Guozhen; Sivec Laura; Owens Jessica M.; Yan Baojie; Yang Jeffrey; Guha Subhendu

Optimization of back reflector for high efficiency hydrogenated nanocrystalline silicon solar cells
Appl. Phys. Lett. 95, 263501 (2009)
United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA
6.
2009

Pinos A.; Marcinkevičius S.; Yang J.; Bilenko Y.; Shatalov M.; Gaska R.; Shur M. S.

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
Appl. Phys. Lett. 95, 181914 (2009)
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
7.
2009

Yan Baojie; Yue Guozhen; Sivec Laura; Yang Jeffrey; Guha Subhendu

Extraction of carrier transport parameters from hydrogenated amorphous and nanocrystalline silicon solar cells
Proc. SPIE Int. Soc. Opt. Eng. 7409, 74090H (2009)
United Solar Ovonic, LLC (USA)
8.
2009

Yang Jeffrey; Guha Subhendu

Status and future perspective of a-Si:H, a-SiGe:H, and nc-Si:H thin film photovoltaic technology
Proc. SPIE Int. Soc. Opt. Eng. 7409, 74090C (2009)
United Solar Ovonic, LLC (USA)
9.
2009

Wang Keda; Han Daxing; Yue Guozhen; Yan Baojie; Yang Jeffrey; Guha Subhendu

Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias
Appl. Phys. Lett. 95, 023506 (2009)
Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
10.
2008

Jain R.; Sun W.; Yang J.; Shatalov M.; Hu X.; Sattu A.; Lunev A.; Deng J.; Shturm I.; Bilenko Y.; Gaska R.; Shur M. S.

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
Appl. Phys. Lett. 93, 051113 (2008)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA
11.
2008

Jiang C.-S.; Yan B.; Yan Y.; Teplin C. W.; Reedy R.; Moutinho H. R.; Al-Jassim M. M.; Yang J.

P-induced nanocrystallite dispersion in amorphous-nanocrystalline mixed-phase Si:H thin films
J. Appl. Phys. 103, 063515 (2008)
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401, USA
12.
2008

Pinos A.; Marcinkevičius S.; Liu K.; Shur M. S.; Kuokštis E.; Tamulaitis G.; Gaska R.; Yang J.; Sun W.

Screening dynamics of intrinsic electric field in AlGaN quantum wells
Appl. Phys. Lett. 92, 061907 (2008)
Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
13.
2007

Yan Baojie; Jiang C.-S.; Teplin C. W.; Moutinho H. R.; Al-Jassim M. M.; Yang Jeffrey; Guha Subhendu

Local current flow in amorphous and nanocrystalline mixed-phase silicon solar cells
J. Appl. Phys. 101, 033712 (2007)
United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084
14.
2006

Simin G.; Yang Z.-J.; Koudymov A.; Adivarahan V.; Yang J.; Asif Khan M.

III-nitride transistors with capacitively coupled contacts
Appl. Phys. Lett. 89, 033510 (2006)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
15.
2006

Yue Guozhen; Yan Baojie; Ganguly Gautam; Yang Jeffrey; Guha Subhendu; Teplin Charles W.

Material structure and metastability of hydrogenated nanocrystalline silicon solar cells
Appl. Phys. Lett. 88, 263507 (2006)
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
16.
2006

Adivarahan V.; Rai S.; Tipirneni N.; Koudymov A.; Yang J.; Simin G.; Asif Khan M.

Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors
Appl. Phys. Lett. 88, 182507 (2006)
Electrical Engineering Department, University of South Carolina, Columbia, South Carolina 29208
17.
2006

Halverson Adam F.; Gutierrez James J.; Cohen J. David; Yan Baojie; Yang Jeffrey; Guha Subhendu

Electronic characterization and effects of light-induced degradation on hydrogenated nanocrystalline silicon
Appl. Phys. Lett. 88, 071920 (2006)
Department of Physics, University of Oregon, Eugene, Oregon 97403
18.
2006

Liang Jianjun; Schiff E. A.; Guha S.; Yan Baojie; Yang J.

Hole-mobility limit of amorphous silicon solar cells
Appl. Phys. Lett. 88, 063512 (2006)
Department of Physics, Syracuse University, Syracuse, New York 13244-1130
19.
2005

Yue Guozhen; Yan Baojie; Yang Jeffrey; Guha Subhendu

Enhancement of light-induced degradation under reverse bias in hydrogenated nanocrystalline silicon solar cells
J. Appl. Phys. 98, 074902 (2005)
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
20.
2005

Saygi S.; Koudymov A.; Adivarahan V.; Yang J.; Simin G.; Khan M. Asif; Deng J.; Gaska R.; Shur M. S.

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
Appl. Phys. Lett. 87, 043505 (2005)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
21.
2005

Chen L.; Skromme B. J.; Chen C.; Sun W.; Yang J.; Khan M. A.; Nakarmi M. L.; Lin J. Y.; Jiang H. X.; Reitmeyer Z. J.; Davis R. F.; Dalmau R. F.; Schlesser R.; Sitar Z.

Optical Reflectance of Bulk AlN Crystals and AlN Epitaxial Films
AIP Conf. Proc. 772, 297 (2005)
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287‐5706;
22.
2005

Semet V.; Binh Vu Thien; Zhang J. P.; Yang J.; Khan M. Asif; Tsu R.

Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier
J. Vac. Sci. Technol. B 23, 824 (2005)
Equipe Emission Electronique, LPMCN-CNRS, University of Lyon 1, Villeurbanne, 69622, France
23.
2005

Yue Guozhen; Yan Baojie; Yang Jeffrey; Guha Subhendu

Effect of electrical bias on metastability in hydrogenated nanocrystalline silicon solar cells
Appl. Phys. Lett. 86, 092103 (2005)
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
24.
2004

Chen L.; Skromme B. J.; Dalmau R. F.; Schlesser R.; Sitar Z.; Chen C.; Sun W.; Yang J.; Khan M. A.; Nakarmi M. L.; Lin J. Y.; Jiang H.-X.

Band-edge exciton states in AlN single crystals and epitaxial layers
Appl. Phys. Lett. 85, 4334 (2004)
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706
25.
2004

Yan Baojie; Yue Guozhen; Yang Jeffrey; Guha Subhendu; Williamson D. L.; Han Daxing; Jiang Chun-Sheng

Hydrogen dilution profiling for hydrogenated microcrystalline silicon solar cells
Appl. Phys. Lett. 85, 1955 (2004)
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
26.
2004

Yan Baojie; Yue Guozhen; Owens Jessica M.; Yang Jeffrey; Guha Subhendu

Light-induced metastability in hydrogenated nanocrystalline silicon solar cells
Appl. Phys. Lett. 85, 1925 (2004)
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
27.
2004

Braga N.; Mickevicius R.; Gaska R.; Hu X.; Shur M. S.; Khan M. Asif; Simin G.; Yang J.

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors
J. Appl. Phys. 95, 6409 (2004)
Integrated Systems Engineering Inc., San Jose, California 95113, USA;
28.
2004

Semet V.; Binh Vu Thien; Zhang J. P.; Yang J.; Khan M. Asif; Tsu R.

Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter
Appl. Phys. Lett. 84, 1937 (2004)
Equipe Emission Electronique, LPMCN-CNRS, University of Lyon 1, Villeurbanne, 69622, France
29.
2003

Tamulaitis G.; Yilmaz I.; Shur M. S.; Gaska R.; Chen C.; Yang J.; Kuokstis E.; Khan A.; Schujman S. B.; Schowalter L. J.

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities
Appl. Phys. Lett. 83, 3507 (2003)
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180;
30.
2003

Yan Baojie; Yang Jeffrey; Guha Subhendu

Effect of hydrogen dilution on the open-circuit voltage of hydrogenated amorphous silicon solar cells
Appl. Phys. Lett. 83, 782 (2003)
United Solar Systems Corp. 1100 West Maple, Troy, Michigan 48084;
31.
2003

Chen C. Q.; Zhang J. P.; Adivarahan V.; Koudymov A.; Fatima H.; Simin G.; Yang J.; Asif Khan M.

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
Appl. Phys. Lett. 82, 4593 (2003)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
32.
2003

Rumyantsev S. L.; Simin G.; Asif Khan M.; Levinshtein M. E.; Shur M. S.; Pala N.; Yang J.

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region
J. Appl. Phys. 93, 10030 (2003)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
33.
2003

Hu X.; Deng J.; Pala N.; Gaska R.; Shur M. S.; Chen C. Q.; Yang J.; Simin G.; Khan M. A.; Rojo J. C.; Schowalter L. J.

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
Appl. Phys. Lett. 82, 1299 (2003)
Sensor Electronic Technology, Inc., Columbia, South Carolina 29209;
34.
2003

Williamson D. L.; Marr D. W. M.; Yang J.; Yan B.; Guha S.

Nonuniform H distribution in thin-film hydrogenated amorphous Si by small-angle neutron scattering
Phys. Rev. B 67, 075314 (2003)
Department of Physics, Colorado School of Mines, Golden, Colorado 80401;
35.
2002

Gaska R.; Chen C.; Yang J.; Kuokstis E.; Khan A.; Tamulaitis G.; Yilmaz I.; Shur M. S.; Rojo J. C.; Schowalter L. J.

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
Appl. Phys. Lett. 81, 4658 (2002)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209;
36.
2002

Rumyantsev S. L.; Yang J.; Simin G.; Khan M. Asif; Levinshtein M. E.; Shur M. S.; Pala N.; Knap W.; Dmitriev A.; Borovitskaya E.; Deng Y.; Hu X.

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures
J. Appl. Phys. 92, 4726 (2002)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
37.
2002

Chapman B. D.; Han S.-W.; Seidler G. T.; Stern E. A.; Cohen J. David; Guha S.; Yang J.

Short-range compositional randomness of hydrogenated amorphous silicon–germanium films
J. Appl. Phys. 92, 801 (2002)
Department of Physics, University of Washington, Seattle, Washington 98195-1560;
38.
2002

Koudymov A.; Fatima H.; Simin G.; Yang J.; Khan M. Asif; Tarakji A.; Hu X.; Shur M. S.; Gaska R.

Maximum current in nitride-based heterostructure field-effect transistors
Appl. Phys. Lett. 80, 3216 (2002)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
39.
2002

Ciplys D.; Rimeika R.; Shur M. S.; Rumyantsev S.; Gaska R.; Sereika A.; Yang J.; Khan M. Asif

Visible–blind photoresponse of GaN-based surface acoustic wave oscillator
Appl. Phys. Lett. 80, 2020 (2002)
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180;
40.
2002

Stratakis E.; Spanakis E.; Tzanetakis P.; Fritzsche H.; Guha S.; Yang J.

Photoinduced stress in hydrogenated amorphous silicon films
Appl. Phys. Lett. 80, 1734 (2002)
Institute of Electronic Structure and Laser, FORTH, P.O. Box 1527, 71110 Heraklion, Crete, Greece;
41.
2001

Lord K.; Yan B.; Yang J.; Guha S.

Light-induced increase in the open-circuit voltage of thin-film heterogeneous silicon solar cells
Appl. Phys. Lett. 79, 3800 (2001)
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084;
42.
2001

Hu X.; Koudymov A.; Simin G.; Yang J.; Khan M. Asif; Tarakji A.; Shur M. S.; Gaska R.

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
Appl. Phys. Lett. 79, 2832 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
43.
2001

Simin G.; Koudymov A.; Tarakji A.; Hu X.; Yang J.; Khan M. Asif; Shur M. S.; Gaska R.

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
Appl. Phys. Lett. 79, 2651 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
44.
2001

Adivarahan V.; Simin G.; Tamulaitis G.; Srinivasan R.; Yang J.; Khan M. Asif; Shur M. S.; Gaska R.

Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
Appl. Phys. Lett. 79, 1903 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028;
45.
2001

Zhang J.; Kuokstis E.; Fareed Q.; Wang H.; Yang J.; Simin G.; Khan M. Asif; Gaska R.; Shur M.

Pulsed atomic layer epitaxy of quaternary AlInGaN layers
Appl. Phys. Lett. 79, 925 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208;
46.
2001

Rumyantsev S. L.; Pala N.; Shur M. S.; Gaska R.; Levinshtein M. E.; Adivarahan V.; Yang J.; Simin G.; Khan M. Asif

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
Appl. Phys. Lett. 79, 866 (2001)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
47.
2001

Rumyantsev S. L.; Hu X.; Simin G.; Khan M. Asif; Levinshtein M. E.; Gaska R.; Shur M. S.; Pala N.; Yang J.

Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors
J. Appl. Phys. 90, 310 (2001)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
48.
2001

Adivarahan V.; Lunev A.; Khan M. Asif; Yang J.; Simin G.; Shur M. S.; Gaska R.

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
Appl. Phys. Lett. 78, 2781 (2001)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028;
49.
2001

Tarakji A.; Simin G.; Ilinskaya N.; Hu X.; Kumar A.; Koudymov A.; Yang J.; Khan M. Asif; Shur M. S.; Gaska R.

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
Appl. Phys. Lett. 78, 2169 (2001)
Photonics and Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208;
50.
2001

Lyou J. H.; Schiff E. A.; Guha S.; Yang J.

Electroabsorption measurements and built-in potentials in amorphous silicon–germanium solar cells
Appl. Phys. Lett. 78, 1924 (2001)
Department of Physics, Syracuse University, Syracuse, New York 13244-1130;
51.
2001

Tsu David V.; Chao Benjamin S.; Ovshinsky Stanford R.; Jones Scott J.; Yang Jeffrey; Guha Subhendu; Tsu Raphael

Heterogeneity in hydrogenated silicon: Evidence for intermediately ordered chainlike objects
Phys. Rev. B 63, 125338 (2001)
Energy Conversion Devices, Troy, Michigan 48084;
52.
2000

Rumyantsev S. L.; Pala N.; Shur M. S.; Gaska R.; Levinshtein M. E.; Khan M. Asif; Simin G.; Hu X.; Yang J.

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
J. Appl. Phys. 88, 6726 (2000)
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590;
53.
2000

Yue Guozhen; Han Daxing; Williamson D. L.; Yang Jeffrey; Lord Kenneth; Guha Subhendu

Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy
Appl. Phys. Lett. 77, 3185 (2000)
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255;
54.
2000

Pearce Joshua M.; Koval Randy J.; Ferlauto Andre S.; Collins Robert W.; Wronski Christopher R.; Yang Jeffrey; Guha Subbhendu

Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
Appl. Phys. Lett. 77, 3093 (2000)
Center For Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16801;
55.
2000

Zhang Jianping; Yang J.; Simin G.; Shatalov M.; Khan M. Asif; Shur M. S.; Gaska R.

Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
Appl. Phys. Lett. 77, 2668 (2000)
University of South Carolina, Department of Electrical Engineering, Columbia, South Carolina 29208;
56.
2000

Khan M. Asif; Hu X.; Tarakji A.; Simin G.; Yang J.; Gaska R.; Shur M. S.

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
Appl. Phys. Lett. 77, 1339 (2000)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208;
57.
2000

Mahan A. H.; Yang J.; Guha S.; Williamson D. L.

Structural changes in a-Si:H film crystallinity with high H dilution
Phys. Rev. B 61, 1677 (2000)
National Renewable Energy Laboratory, Golden, Colorado 80401;
58.
1999

Guha S.; Yang J.; Williamson D. L.; Lubianiker Y.; Cohen J. D.; Mahan A. H.

Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity
Appl. Phys. Lett. 74, 1860 (1999)
United Solar Systems Corp., Troy, Michigan 48084
59.
1999

Guha S.; Yang J.; Banerjee A.; Hoffman K.; Call J.

Manufacturing issues for large volume production of amorphous silicon alloy photovoltaic modules
AIP Conf. Proc. 462, 88 (1999)
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084;
60.
1999

Mahan A. H.; Reedy R. C.; Iwaniczko E.; Wang Q.; Nelson B. P.; Xu Y.; Gallagher A. C.; Branz H. M.; Crandall R. S.; Yang J.; Guha S.

H out-diffusion and device performance in n-i-p solar cells using high temperature hot wire a-Si:H i-layers
AIP Conf. Proc. 462, 285 (1999)
National Renewable Energy Laboratory, Golden, Colorado 80401;
61.
1997

Yang Jeffrey; Banerjee Arindam; Guha Subhendu

A record setting amorphous silicon alloy triple-junction solar cell with 14.6% initial and 12.8% stable efficiencies
AIP Conf. Proc. 394, 13 (1997)
United Solar Systems Corp., Troy, Michigan 48084
62.
1996

Guha S.; Yang J.; Banerjee A.; Glatfelter T.; Hoffman K.; Xu X.

Advances in amorphous silicon alloy multijunction cells and modules
AIP Conf. Proc. 353, 73 (1996)
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
63.
1994

Banerjee A.; Yang J.; Hoffman K.; Guha S.

Characteristics of hydrogenated amorphous silicon alloy solar cells on a Lambertian back reflector
Appl. Phys. Lett. 65, 472 (1994)
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan
64.
1994

Guha S.; Yang J.; Banerjeee A.; Glatfelter T.; Hoffman K.; Xu X.

High efficiency multijunction amorphous silicon alloy‐based solar cells and modules
AIP Conf. Proc. 306, 127 (1994)
United Solar Systems Corp., Troy, Michigan 48084
65.
1994

Banerjee A.; Yang J.; Glatfelter T.; Hoffman K.; Guha S.

Experimental study of p layers in ‘‘tunnel’’ junctions for high efficiency amorphous silicon alloy multijunction solar cells and modules
Appl. Phys. Lett. 64, 1517 (1994)
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
66.
1993

Xu X.; Yang J.; Guha S.

On the lack of correlation between film properties and solar cell performance of amorphous silicon‐germanium alloys
Appl. Phys. Lett. 62, 1399 (1993)
United Solar Systems Corp., Troy, Michigan 48084
67.
1992

Guha S.; Yang J.; Banerjee A.; Glatfelter T.; Xu X.

Advances in amorphous silicon alloy‐based multijunction cells and modules
AIP Conf. Proc. 268, 64 (1992)
United Solar Systems Corp., Troy, Michigan 48084
68.
1992

Guha S.; Yang J.; Jones Scott J.; Chen Yan; Williamson D. L.

Effect of microvoids on initial and light‐degraded efficiencies of hydrogenated amorphous silicon alloy solar cells
Appl. Phys. Lett. 61, 1444 (1992)
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084

Co-authors

Co-publications
34

Guha, Subhendu
26

Shur, Michael
23

Gaska, Remis
21

Khan, M. Asif
20

Simin, Grigory S.
14

Yan, Baojie
11

Hu, X
10

Yue, Guozhen
8

Koudymov, A
7

Adivarahan, Vinod
6

Pala, N
6

Rumyantsev, Sergey L.
6

Williamson, Don L.
5

Tarakji, A
5

Levinshtein, Michael E.