Yao, Takafumi

Lee Sun-Kyun; Kwon Bong-Joon; Cho Yong-Hoon; Ko Hang-Ju; Yao Takafumi

Excitonic transition dynamics on front and back surfaces of ZnO thin films

Park S. H.; Minegishi T.; Lee H. J.; Oh D. C.; Ko H. J.; Chang J. H.; Yao T.

Growth mechanism of ZnO low-temperature homoepitaxy

Han Seok Kyu; Lee Hyo Sung; Lim Dong Seok; Hong Soon-Ku; Yoon Nara; Oh Dong-Cheol; Ahn Byung Jun; Song Jung-Hoon; Yao Takafumi

Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Lee Sun-Kyun; Kwon Bong-Joon; Cho Yong-Hoon; Ko Hang-Ju; Yao Takafumi

Excitonic transition dynamics on front and back surfaces of ZnO thin films

Park S. H.; Minegishi T.; Lee H. J.; Oh D. C.; Ko H. J.; Chang J. H.; Yao T.

Growth mechanism of ZnO low-temperature homoepitaxy

Han Seok Kyu; Lee Hyo Sung; Lim Dong Seok; Hong Soon-Ku; Yoon Nara; Oh Dong-Cheol; Ahn Byung Jun; Song Jung-Hoon; Yao Takafumi

Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Lee Hyun-Jae; Fujii K.; Goto T.; Yao T.; Chang Jiho

Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of m-GaN on m-sapphire

Park S. H.; Minegishi T.; Lee H. J.; Park J. S.; Im I. H.; Yao T.; Oh D. C.; Taishi T.; Yonenaga I.; Chang J. H.

Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy

Park Jinsub; Goto Takenari; Park Sung Hyun; Ha Jun-seok; Yoon Euijoon; Yao Takafumi

Ultraviolet stimulated emission in periodically polarity-inverted ZnO structures at room temperature

Park Jinsub; Kim Ki Hyun; Park Sung Hyun; Yoon Euijoon; Yao Takafumi

Catalyst-Free Growth of Vertically Aligned ZnO Nanostructures Arrays on Periodically Polarity-Inverted Substrate

Park J. S.; Minegishi T.; Lee J. W.; Hong S. K.; Song J. H.; Lee J. Y.; Yoon E.; Yao T.

Anisotropic properties of periodically polarity-inverted zinc oxide structures

Jung Mina; Chang Jiho; Lee Hyunjae; Ha Jun-seok; Park Jin-sub; Park Seungwhan; Fujii Katsushi; Yao Takafumi; Kil Gyung-suk; Lee Seogwoo; Cho Myungwhan; Whang Sungmin; Seo Yong-gon

Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

Im Inho; Jung Mina; Koo Jieun; Lee Hyunjae; Park Jinsub; Minegishi Tsutomu; Park Seunghwan; Fujii Katsushi; Yao Takafumi; Kil Gyungsuk; Hanada Takashi; Chang Jiho

Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

Oh D. C.; Park S. H.; Goto H.; Im I. H.; Jung M. N.; Chang J. H.; Yao T.; Song J. S.; Bae C. H.; Han C. S.; Koo K. W.

Influence of heat treatments on electrical properties of ZnO films grown by molecular-beam epitaxy

Fujii Katsushi; Lee Seogwoo; Ha Jun-Seok; Lee Hyun-Jae; Lee Hyo-Jong; Lee Sang-Hyun; Kato Takashi; Cho Meoung-Whan; Yao Takafumi

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Park J. S.; Yamazaki Y.; Takahashi Y.; Hong S. K.; Chang J. H.; Fujiwara T.; Yao T.

Origin of second-order nonlinear optical response of polarity-controlled ZnO films

Park J. S.; Jung M. N.; Lee W.; Jeon H.; Ahn S.; Lee J. Y.; Lee J. W.; Hong S. K.; Yao T.; Cho M. W.; Goto T.; Park S. H.; Im I. H.; Lee S. H.; Minegishi T.; Chang J. H.

Fabrication of one-dimensional and two-dimensional periodically polarity inverted ZnO structures using the patterned CrN buffer layers

Han Seok Kyu; Kim Jae Goo; Kim Jung-Hyun; Hong Soon-Ku; Lee Jae Wook; Lee Jeong Yong; Song Jung-Hoon; Nam Yoon Sung; Chang Soo-Kyung; Yao Takafumi

Effects of two-step growth by employing Zn-rich and O-rich growth conditions on properties of (1120) ZnO films grown by plasma-assisted molecular beam epitaxy on sapphire

Kim Jung-Hyun; Han Seok Kyu; Hong Sun Ig; Hong Soon-Ku; Lee Jae Wook; Lee Jeong Yong; Song Jung-Hoon; Park Jin Sub; Yao Takafumi

Growth and structural properties of ZnO films on (10-10)m-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Park J. S.; Goto T.; Hong S. K.; Lee S. H.; Lee J. W.; Minegishi T.; Park S. H.; Chang J. H.; Oh D. C.; Lee J. Y.; Yao T.

Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3

Lee Hyun-Jae; Ha Jun-Seok; Goto T.; Yao T.; Kim Chinkyo; Hong Soon-Ku; Chang Jiho

Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [11;20]; to [0001]

Lee S. W.; Ha Jun-Seok; Lee Hyun-Jae; Lee Hyo-Jong; Goto H.; Hanada T.; Goto T.; Fujii Katsushi; Cho M. W.; Yao T.

Lattice strain in bulk GaN epilayers grown on CrN/sapphire template

Kwon Bong-Joon; Sun Yuanping; Chung Jean Soo; Cho Yong-Hoon; Park J. S.; Yao T.

Optical properties and carrier dynamics of polarity controlled ZnO films grown on (0001) Al2O3 by Cr-compound intermediate layers

Song J. S.; Seo S. H.; Choi Y. C.; Song H. S.; Chang Y. H.; Oh M. H.; Oh D. C.; Yao T.; Chang J. H.; Han C. S.; Koo K. W.

High external emission efficiency in intentionally ordered GaInP/GaAs structures

Oh D. C.; Kato T.; Goto H.; Park S. H.; Hanada T.; Yao T.; Kim J. J.

Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

Ohno Y.; Koizumi H.; Taishi T.; Yonenaga I.; Fujii K.; Goto H.; Yao T.

Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures

Nam Yoon Sung; Lee Sang Wook; Baek K. S.; Chang S. K.; Song Jae-Ho; Song Jung-Hoon; Han Seok Kyu; Hong Soon-Ku; Yao Takafumi

Anisotropic optical properties of free and bound excitons in highly strained A-plane ZnO investigated with polarized photoreflectance and photoluminescence spectroscopy

Minegishi T.; Jeon H.; Fujii K.; Nakano H.; Oh D. C.; Im I.; Park J.; Park S.; Ahn S.; Kim D.; Kim J.; Ishizawa A.; Yao T.

Fabrication of periodically polarity-inverted ZnO films

Setiawan A.; Hamidah I.; Maryanto S.; Aisyah S.; Yao T.

Dislocations in P‐MBE Grown ZnO Layers Characterized by HRXRD and TEM

Ha Jun-Seok; Lee Hyo-Jong; Lee Seog Woo; Lee Hyun Jae; Lee Sang Hyun; Goto Hiroki; Cho Meoung Whan; Yao Takafumi; Hong Soon-Ku; Toba Ryuichi; Lee Jae Wook; Lee Jeong Yong

Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands

Oh D. C.; Im I. H.; Park S. H.; Hanada T.; Yao T.; Song J. S.; Chang J. H.; Makino H.; Han C. S.; Koo K. H.

Electrical properties of conductive and resistive ZnSe layers

Oh D. C.; Han C. S.; Makino H.; Chang J. H.; Song J. S.; Yao T.; Hanada T.; Park S. H.; Im I. H.; Takai T.; Koo K. H.

Optical properties and electrical properties of heavily Al-doped ZnSe layers

Fujii K.; Yao T.; Ohkawa K.

Photoelectrochemical Reactions and Hydrogen Evolution of III‐Nitride Semiconductors

Ohno Y.; Koizumi H.; Taishi T.; Yonenaga I.; Fujii K.; Goto H.; Yao T.

Light emission due to dislocations in wurtzite ZnO bulk single crystals freshly introduced by plastic deformation

Park J. S.; Minegishi T.; Lee S. H.; Im I. H.; Park S. H.; Hanada T.; Goto T.; Cho M. W.; Yao T.; Hong S. K.; Chang J. H.

Effects of interfacial layer structures on crystal structural properties of ZnO films

Park S. H.; Hanada T.; Oh D. C.; Minegishi T.; Goto H.; Fujimoto G.; Park J. S.; Im I. H.; Chang J. H.; Cho M. W.; Yao T.; Inaba K.

Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy

Lee Hyo-Jong; Ha Jun-Seok; Lee S. W.; Lee H. J.; Goto H.; Lee S. H.; Cho M. W.; Yao T.; Minegishi T.; Hanada T.; Hong Soon-Ku; Sakata Osami; Lee Jae Wook; Lee Jeong Yong

Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

Lee Hyun-Jae; Lee S. W.; Goto H.; Lee Sang-Hyun; Lee Hyo-Jong; Ha J. S.; Goto Takenari; Cho M. W.; Yao T.; Hong Soon-Ku

Self-separated freestanding GaN using a NH4Cl interlayer

Oh D. C.; Lee S. W.; Goto H.; Park S. H.; Im I. H.; Hanada T.; Cho M. W.; Yao T.

Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy

Hayashi Kouichi; Hayashi Tetsutaro; Yao Takafumi; Makino Hisao; Matsubara Eiichiro; Shishido Toetsu; Matsushita Tomohiro

Application of x-ray excited optical luminescence to x-ray standing wave method and atomic resolution holography

Park J. S.; Hong S. K.; Minegishi T.; Park S. H.; Im I. H.; Hanada T.; Cho M. W.; Yao T.; Lee J. W.; Lee J. Y.

Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers

Ono Masato; Fujii Katsushi; Ito Takashi; Iwaki Yasuhiro; Hirako Akira; Yao Takafumi; Ohkawa Kazuhiro

Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN

Lee S. W.; Minegishi T.; Lee W. H.; Goto H.; Lee H. J.; Lee S. H.; Lee Hyo-Jong; Ha J. S.; Goto T.; Hanada T.; Cho M. W.; Yao T.

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

Cho Yong-Hoon; Kim Ji-Young; Kwack Ho-Sang; Kwon Bong-Joon; Dang Le Si; Ko Hang-Ju; Yao Takafumi

Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers

Lee S. W.; Oh D. C.; Goto H.; Ha J. S.; Lee H. J.; Hanada T.; Cho M. W.; Yao T.; Hong S. K.; Lee H. Y.; Cho S. R.; Choi J. W.; Choi J. H.; Jang J. H.; Shin J. E.; Lee J. S.

Origin of forward leakage current in GaN-based light-emitting devices

Hanada Takashi; Totsuka Hirofumi; Hong Soon-Ku; Godo Kenji; Miyajima Kensuke; Goto Takenari; Yao Takafumi

Slowdown in development of self-assembled InAs/;GaAs(001) dots near the critical thickness

Oh D. C.; Suzuki T.; Hanada T.; Yao T.; Makino H.; Ko H. J.

Photoresponsivity of ZnO Schottky barrier diodes

Goto T.; Makino H.; Yao T.; Chia C. H.; Makino T.; Segawa Y.; Mousdis G. A.; Papavassiliou G. C.

Localization of triplet excitons and biexcitons in the two-dimensional semiconductor (CH3C6H4CH2NH3)2PbBr4

Baba Takeshi; Makino Hisao; Mori Takahiro; Hanada Takashi; Yao Takafumi; Lee Hyun-Yong

Experimental demonstration of Fano-type resonance in photoluminescence of ZnS:Mn/;SiO2 one-dimensional photonic crystals

Oh D. C.; Suzuki T.; Kim J. J.; Makino H.; Hanada T.; Yao T.; Ko H. J.

Capacitance-voltage characteristics of ZnO/;GaN heterostructures

Vashaei Z.; Minegishi T.; Suzuki H.; Hanada T.; Cho M. W.; Yao T.; Setiawan A.

Structural variation of cubic and hexagonal MgxZn1-x;O layers grown on MgO(111)/c;-sapphire

Lee Hyun-Yong; Cho Sung-June; Nam Gi-Yeon; Lee Wook-Hyun; Baba Takeshi; Makino Hisao; Cho Meoung-Whan; Yao Takafumi

Multiple-wavelength-transmission filters based on Si-SiO2 one-dimensional photonic crystals

Mori Takahiro; Morimura Toshiharu; Hanada Takashi; Yao Takafumi

GaNAs(001) surface phases under growing condition

Kim J. J.; Makino H.; Sakurai M.; Oh D. C.; Hanada T.; Cho M. W.; Yao T.; Emura S.; Kobayashi K.

Structure and magnetic properties of Cr-doped GaN

Minegishi Tsutomu; Yoo JungHoon; Suzuki Hideyuki; Vashaei Zahra; Inaba Katsuhiko; Shim Keesam; Yao Takafumi

Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy

Oh D. C.; Suzuki T.; Kim J. J.; Makino H.; Hanada T.; Cho M. W.; Yao T.; Song J. S.; Ko H. J.

Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy

Oh D. C.; Kim J. J.; Makino H.; Hanada T.; Cho M. W.; Yao T.; Ko H. J.

Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

Oh D. C.; Suzuki T.; Kim J. J.; Makino H.; Hanada T.; Cho M. W.; Yao T.

Electron-trap centers in ZnO layers grown by molecular-beam epitaxy

Ishida Akihiro; Matsue Kazuma; Inoue Yoku; Fujiyasu Hiroshi; Ko Hang-Ju; Setiawan Agus; Kim Jung-Jin; Makino Hisao; Yao Takafumi

Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications

Takeuchi Tomoyuki; Taguchi Munetaka; Harada Yoshihisa; Tokushima Takashi; Takata Yasutaka; Chainani Ashish; Kim Jung-Jin; Makino Hisao; Yao Takafumi; Tsukamoto Takeyo; Shin Shik; Kobayashi Keisuke

Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga1-xCrxN Films

Takeuchi T.; Harada Y.; Tokushima T.; Taguchi M.; Takata Y.; Chainani A.; Kim J. J.; Makino H.; Yao T.; Yamamoto T.; Tsukamoto T.; Shin S.; Kobayashi K.

Doping-dependent changes in nitrogen 2p states in the diluted magnetic semiconductor Ga1-x;CrxN

Oh D. C.; Takai T.; Hanada T.; Cho M. W.; Yao T.; Song J. S.; Chang J. H.; Lu F.

Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy

Kim J. J.; Makino H.; Kobayashi K.; Takata Y.; Yamamoto T.; Hanada T.; Cho M. W.; Ikenaga E.; Yabashi M.; Miwa D.; Nishino Y.; Tamasaku K.; Ishikawa T.; Shin S.; Yao T.

Hybridization of Cr 3d–;N2p–;Ga4s in the wide band-gap diluted magnetic semiconductor Ga1-x;CrxN

Setiawan Agus; Vashaei Zahra; Cho Meoung Whan; Yao Takafumi; Kato Hiroyuki; Sano Michihiro; Miyamoto Kazuhiro; Yonenaga I.; Ko Hang Ju

Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn/;O flux ratios

Aliev G. N.; Bingham S. J.; Wolverson D.; Davies J. J.; Makino H.; Ko H. J.; Yao T.

Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO

Kato Hiroyuki; Miyamoto Kazuhiro; Sano Michihiro; Yao Takafumi

Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness

Takata Y.; Tamasaku K.; Tokushima T.; Miwa D.; Shin S.; Ishikawa T.; Yabashi M.; Kobayashi K.; Kim J. J.; Yao T.; Yamamoto T.; Arita M.; Namatame H.; Taniguchi M.

A probe of intrinsic valence band electronic structure: Hard x-ray photoemission

Sano Michihiro; Miyamoto Kazuhiro; Kato Hiroyuki; Yao Takafumi

Role of hydrogen in molecular beam epitaxy of ZnO

Oh D. C.; Makino H.; Hanada T.; Cho M. W.; Yao T.; Song J. S.; Chang J. H.; Lu F.

Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy

Song J. S.; Oh D. C.; Makino H.; Hanada T.; Cho M. W.; Yao T.; Park Y.-G.; Shindo D.; Chang J. H.

Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer

Kobayashi Keisuke; Takata Yasutaka; Yamamoto Tetsuya; Kim Jung-Jin; Makino Hisao; Tamasaku Kenji; Yabashi Makina; Miwa Daigo; Ishikawa Tetsuya; Shin Shik; Yao Takafumi

Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy

Taghavinia N.; Makino H.; Yao T.

Enhancement of Mn luminescence in ZnS:Mn multi-quantum-well structures

Sano Michihiro; Miyamoto Kazuhiro; Kato Hiroyuki; Yao Takafumi

The Role of Surface Chemistry in Growth and Material Properties of ZnO Epitaxial Layers Grown on a‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy

Kim T. J.; Yao T.; Mori T.; Aspnes D. E.; Kim S. J.; Kim Y. D.; Ghong T. H.; Koo B. H.

Dielectric functions of InxGa1-x;As alloys

Kato Hiroyuki; Miyamoto Kazuhiro; Sano Michihiro; Yao Takafumi

Homoepitaxial Growth of High‐Quality Zn‐Polar ZnO Films by Plasma‐Assisted Molecular Beam Epitaxy

Mashita Masao; Numata Toshifumi; Nakazawa Hideki; Kajikawa Yasutomo; Koo Bon-Heun; Makino Hisao; Yao Takafumi

Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs (111)A Substrates

Song J. S.; Cho M. W.; Oh D. C.; Makino H.; Hanada T.; Yao T.; Zhang B. P.; Segawa Y.; Chang J. H.; Song H. S.; Cho I. S.; Kim H. W.; Jung J. J.

Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors

Kato Hiroyuki; Sano Michihiro; Miyamoto Kazuhiro; Yao Takafumi

Effect of O/Zn Flux Ratio on Crystalline Quality of ZnO Films Grown by Plasma‐Assisted Molecular Beam Epitaxy

Lee Hyun-Yong; Ko Hang-Ju; Yao Takafumi

Effect of Ag photodoping on deep-level emission spectra of ZnO epitaxial films

Lee Hyun-Yong; Yao Takafumi

Design and evaluation of omnidirectional one-dimensional photonic crystals

Lee Hyun-Yong; Makino Hisao; Yao Takafumi; Tanaka Akinori

Si-based omnidirectional reflector and transmission filter optimized at a wavelength of 1.55 μm

Miyamoto Kazuhiro; Sano Michihiro; Kato Hiroyuki; Yao Takafumi

Effects of ZnO/MgO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c‐Plane Sapphire

Hong Soon-Ku; Chang Ji-Ho; Hanada Takashi; Kurtz Elisabeth; Oku Masaoki; Yao Takafumi

Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

Godo K.; Chang J. H.; Makino H.; Takai T.; Hanada T.; Yao T.; Sasao T.; Goto T.

Formation processes of CdTe quantum dots on ZnTe substrates studied by reflection high-energy electron diffraction and photoluminescence

Ko Hang-Ju; Yao Takafumi; Chen Yefan; Hong Soon-Ku

Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy

Kim T. J.; Ihn Y. S.; Kim Y. D.; Kim S. J.; Aspnes D. E.; Yao T.; Shim K.; Koo B. H.

Pseudodielectric functions of InGaAs alloy films grown on InP

Van Dao Lap; Lowe Martin; Hannaford Peter; Makino Hisao; Takai Toshiaki; Yao Takafumi

Femtosecond three-pulse photon echo and population grating studies of the optical properties of CdTe/ZnSe quantum dots

Peng Dong-Liang; Lerondel Gilles; Hihara Takehiko; Sumiyama Kenji; Yao Takafumi

Large Co Cluster Deposition on Naturally and Artificially Patterned Substrates

Lee Hyun-Yong; Yao Takafumi

Wet-etching selectivity of Ag-photodoped AsGeSeS thin films and the fabrication of a planar corrugated one-dimensional photonic crystal by a holographic method

Kato Hiroyuki; Sano Michihiro; Miyamoto Kazuhiro; Yao Takafumi

Effects of slight misorientation of GaN templates on molecular-beam-epitaxy growth of ZnO

Matsumoto Takahiro; Kato Hiroyuki; Miyamoto Kazuhiro; Sano Michihiro; Zhukov Evgeniy A.; Yao Takafumi

Correlation between grain size and optical properties in zinc oxide thin films

Hong Soon-Ku; Ko Hang-Ju; Chen Yefen; Yao Takafumi

Control of ZnO film polarity

Kumagai N.; Hanada T.; Yao T.; Yasuda T.

Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation

Lee Hyun-Yong; Takai Toshiaki; Yao Takafumi

Silver photodoping into Al–ZnSe for application to white light emitters

Godo K.; Makino H.; Cho M. W.; Chang J. H.; Hong S. K.; Yao T.; Shen M. Y.; Goto T.

Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures

Taghavinia N.; Lerondel G.; Makino H.; Parisini A.; Yamamoto A.; Yao T.; Kawazoe Y.; Goto T.

Structural and Optical Properties of Oxidized Porous Silicon Layers Activated by Zn2SiO4:Mn²⁺

Hong Soon-Ku; Hanada Takashi; Ko Hang-Ju; Chen Yefan; Yao Takafumi; Imai Daisuke; Araki Kiyoaki; Shinohara Makoto; Saitoh Koh; Terauchi Masami

Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN

Lee Hyun-Yong; Takai Toshiaki; Yao Takafumi

Photoluminescence Properties of Selectively Ag‐Photodoped Al‐ZnSe at Room Temperature

Lee Hyun-Yong; Song Joon-Suk; Yao Takafumi

Real-time photoluminescence evaluation of low-temperature photodarkening effect in amorphous SeGe

Chen Yefan; Ko Hang-Ju; Hong Soon-Ku; Yao Takafumi; Segawa Yusaburo

Morphology evolution of ZnO(000 1¯); surface during plasma-assisted molecular-beam epitaxy

Lee Hyun-Yong; Song Joon-Suk; Makino Hisao; Yao Takafumi

Ag photodoping into crystalline ZnSe

Koo B. H.; Hanada T.; Makino H.; Yao T.

Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1-x;AlxAs/InP

Godo K.; Makino H.; Cho M. W.; Chang J. H.; Yamazaki Y.; Yao T.; Shen M. Y.; Goto T.

Composition dependence of the energy gap of Zn1-x-y;MgxBeySe quaternary alloys nearly lattice matched to GaAs

Yamamoto Aishi; Miyajima Kensuke; Goto Takenari; Ju Ko Hang; Yao Takafumi

Biexciton luminescence in high-quality ZnO epitaxial thin films

Hanada Takashi; Koo Bon-Heun; Totsuka Hirofumi; Yao Takafumi

Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction

Chang J. H.; Takai T.; Koo B. H.; Song J. S.; Handa T.; Yao T.

Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy

Hong Soon-Ku; Araki Kiyaoki; Imai Daisuke; Sato Shigeru; Sasaki Hiroyuki; Tanaka Akinori; Yao Takafumi; Chen Yefan; Ko Hang-Ju; Makino Hisao; Hanada Takashi; Shinohara Makoto

ZnO epilayers on GaN templates: Polarity control and valence-band offset

Guo L. W.; Yao T.; Sumiyama K.; Hong S. K.; Hanada T.; Makino H.; Peng D. L.; Inaba K.

Structural characteristics and magnetic properties of λ-;MnO2 films grown by plasma-assisted molecular beam epitaxy

Chen Yefan; Hong Soon-ku; Ko Hang-ju; Kirshner V.; Wenisch H.; Yao Takafumi; Inaba Katsuhiko; Segawa Yusaburo

Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch

Hong Soon-Ku; Hanada Takashi; Makino Hisao; Chen Yefan; Ko Hang-Ju; Yao Takafumi; Tanaka Akinori; Sasaki Hiroyuki; Sato Shigeru

Band alignment at a ZnO/GaN (0001) heterointerface

Dao Lap V.; Makino Hisao; Koo B. H.; Gal Mike; Yao Takafumi

Measurement of Optical Absorption in InAs/InAlAs Quantum Dots using a Photoluminescence Technique

Hanada Takashi; Totsuka Hirofumi; Yao Takafumi

Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Chen Yefan; Tuan N. T.; Segawa Yusaburo; Ko Hang-ju; Hong Soon-ku; Yao Takafumi

Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers

Chang J. H.; Song J. S.; Godo K.; Yao T.; Shen M. Y.; Goto T.

ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

Hong Soon-Ku; Kurtz Elisabeth; Chang Ji-Ho; Hanada Takashi; Oku Masaoki; Yao Takafumi

Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers

Ko H. J.; Chen Y. F.; Yao T.; Miyajima H.; Yamamoto A.; Goto T.

Erratum: “Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. ;77, 537 (2000)]

Ko H. J.; Chen Y. F.; Hong S. K.; Wenisch H.; Yao T.; Look D. C.

Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

Hong Soon-Ku; Hanada Takashi; Ko Hang-Ju; Chen Yefan; Yao Takafumi; Imai Daisuke; Araki Kiyoaki; Shinohara Makoto

Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates

Chang J. H.; Cho M. W.; Wang H. M.; Wenisch H.; Hanada T.; Yao T.; Sato K.; Oda O.

Structural and optical properties of high-quality ZnTe homoepitaxial layers

Mashita Masao; Hiyama Yoshihito; Arai Kenta; Koo Bon-Heun; Yao Takafumi

Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates

Ko H. J.; Chen Y. F.; Yao T.; Miyajima K.; Yamamoto A.; Goto T.

Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy

Hong S. K.; Yao T.; Kim B. J.; Yoon S. Y.; Kim T. I.

Origin of hexagonal-shaped etch pits formed in (0001) GaN films

Hong S. K.; Hanada T.; Chen Y.; Ko H. J.; Yao T.

ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3

Chang J. H.; Wang H. M.; Cho M. W.; Makino H.; Hanada H.; Yao T.; Shim K.; Rabitz H.

Optical properties of ZnMgSeTe quaternary alloys grown on ZnTe substrates by molecular-beam epitaxy

Chen Yefan; Ko Hang-ju; Hong Soon-ku; Sekiuchi Takashi; Yao Takafumi; Segawa Yusaburo

Plasma-assisted molecular beam epitaxy for ZnO based II–VI semiconductor oxides and their heterostructures

Ko H. J.; Chen Y. F.; Zhu Z.; Yao T.; Kobayashi I.; Uchiki H.

Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy

Cho M. W.; Chang J. H.; Saeki S.; Wang S. Q.; Yao T.

Characteristics of BeTe films grown by molecular beam epitaxy

Chen Yefan; Ko Hang-Ju; Hong Soon-Ku; Yao Takafumi

Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer

Chen Yefan; Hong Soon-ku; Ko Hang-ju; Nakajima Masa; Yao Takafumi; Segawa Yusaburo

Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates

Chu Shucheng; Saisho Tetsuhiro; Fujimura Kazuo; Sakakibara Shingo; Tanoue Fumiyasu; Ishino Kenei; Ishida Akihiro; Harima Hiroshi; Oka Yasuo; Takahiro Katsumi; Chen Yefan; Yao Takafumi; Fujiyasu Hiroshi

Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga+In) source

Hanada Takashi; Yasuda Tetsuji; Ohtake Akihiro; Hingerl Kurt; Miwa Shiro; Arai Kenta; Yao Takafumi

In situ observation of strain-induced optical anisotropy of ZnSxSe1-x;/GaAs(110) during molecular-beam epitaxy

Chang J. H.; Cho M. W.; Godo K.; Makino H.; Yao T.; Shen M. Y.; Goto T.

Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures

Ren Tian-Ling; Zhu Ziqiang; Zhu Jia-Lin; Yao Takafumi

Compensation introduced by defect complexes in p-type ZnSe

Yamamoto Aishi; Kido Takeo; Goto Takenari; Chen Yefan; Yao Takafumi; Kasuya Atsuo

Dynamics of photoexcited carriers in ZnO epitaxial thin films

Korotchenkov O. A.; Yamamoto A.; Goto T.; Cho M.-W.; Yao T.

Acoustic driving effect on radiative decays of excitons in ZnSe/ZnS single quantum wells

Chu Shucheng; Saisho Tetsuhiro; Fujimura Kazuo; Sakakibara Shingo; Tanoue Fumiyasu; Ishino Kenei; Ishida Akihiro; Harima Hiroshi; Chen Yefan; Yao Takafumi; Fujiyasu Hiroshi

High-quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source

Ulyanenkov A.; Takase A.; Kuribayashi M.; Ishida K.; Ohtake A.; Arai K.; Hanada T.; Yasuda T.; Yao T.; Tomita H.; Komiya S.

X-ray reflectivity from ZnSe/GaAs heterostructures

Cho M. W.; Chang J. H.; Bagnall D. M.; Hiraga K.; Zhu Z.; Park K. T.; Saeki S.; Koh K. W.; Yao T.

Growth and characterization of beryllium-based II–VI compounds

Zhu Jia-Lin; Zhu Ziqiang; Kawazoe Yoshiyuki; Yao Takafumi

Spin oscillation and its reduction in a quantum dot

Wang S. Q.; Lu F.; Zhu Z. Q.; Sekiguchi T.; Okushi H.; Kimura K.; Yao T.

Compensating levels in p-type ZnSe:N studied by optical deep-level transient spectroscopy

Chen Yefan; Bagnall D. M.; Koh Hang-jun; Park Ki-tae; Hiraga Kenji; Zhu Ziqiang; Yao Takafumi

Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire; Growth and characterization

Bagnall D. M.; Chen Y. F.; Zhu Z.; Yao T.; Shen M. Y.; Goto T.

High temperature excitonic stimulated emission from ZnO epitaxial layers

Miwa S.; Kuo L. H.; Kimura K.; Yasuda T.; Ohtake A.; Jin C. G.; Yao T.

The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)

Hingerl K.; Yasuda T.; Hanada T.; Miwa S.; Kimura K.; Ohtake A.; Yao T.

In situ determination of in-plane strain anisotropy in ZnSe(001)/GaAs layers using reflectance difference spectroscopy

Tomiye Hideto; Yao Takafumi

Investigation of charge trapping in a SiO2/Si system with a scanning capacitance microscope

Takase Aya; Tomita Hirofumi; Yao Takafumi; Miwa Shiro; Yasuda Tetsuji; Kuo Li-Hsin; Kimura Kozo; Ishida Kohtaro; Kuribayashi Masaru; Komiya Satoshi

Characterization of ZnSe/GaAs(001) heteroepitaxial interfaces by x-ray reflectivity measurement

Tomasini P.; Arai K.; Lu F.; Zhu Z. Q.; Sekiguchi T.; Yao T.; Shen M. Y.; Goto T.

Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs

Jung H. D.; Yasuda T.; Yao T.; Zhu Z.; Hanada T.; Kumagai N.; Kimura K.

Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis

Tomasini P.; Yasuda T.; Goto T.; Shen M. Y.; Yao T.; Suezawa M.; Sekiguchi T.; Zhu Z. Q.; Lu F.; Arai K.; Segawa Y.

Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

Ohtake Akihiro; Kuo Li-Hsin; Kimura Kozo; Miwa Shiro; Yasuda Tetsuji; Jin Chengguo; Yao Takafumi; Nakajima Kaoru; Kimura Kenji

Defect generation in layer-by-layer-grown ZnSe films on Te-terminated GaAs(001) surfaces

Wu Yihong; Arai Kenta; Kuroda Noritaka; Shen Meng-yan; Yamamoto Aishi; Yao Takafumi; Goto Takenari

Optical Properties of Manganese-Doped ZnSe/ZnS Quantum Dots Grown by Molecular Beam Epitaxy

Ohtake Akihiro; Miwa Shiro; Kuo Li-Hsin; Kimura Kozo; Yasuda Tetsuji; Jin Chengguo; Yao Takafumi

Surface processes during heteroepitaxy of ZnSe on GaAs(111)A as observed by reflection high-energy electron diffraction

Wang Xun; Jiang Zui-min; Zhu Hai-jun; Lu Fang; Huang Daming; Liu Xiaohan; Hu Chang-wu; Chen Yifan; Zhu Ziqiang; Yao Takafumi

Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy

Jin Cheng-Guo; Yao Takafumi; Miwa Shiro; Wang Tai-Hong; Kuo Li-Hsin; Ohtake Akihiro; Kimura Kozo; Yasuda Tetsuji; Tanaka Kazunobu

Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy

Jung H. D.; Yasuda T.; Yao T.; Zhu Z.; Hanada T.; Kumagai N.; Kimura K.

In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

Wang S. Q.; Cavenett B. C.; Okushi H.; Zhu Z. Q.; Song C. D.; Jung H. D.; Lu F.; Yao T.

Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy

Miwa S.; Kuo L. H.; Kimura K.; Ohtake A.; Yasuda T.; Jin C. G.; Yao T.

ZnSe epitaxy on a GaAs(110) surface

Kimura K.; Miwa S.; Jin C. G.; Kuo L. H.; Yasuda T.; Ohtake A.; Tanaka K.; Yao T.; Kobayashi H.

Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio

Komura Takuji; Yao Takafumi; Yoshimura Masamichi

Atomic and electronic structures of rebonded B-type steps on the Si(001)-2×1; surface

Kimura K.; Miwa S.; Kajiyama H.; Yasuda T.; Kuo L. H.; Jin C. G.; Tanaka K.; Yao T.

The effect of nitrogen ions emitted from a plasma source on molecular beam epitaxial growth of p-ZnSe:N

Ohtake A.; Nakajima K.; Yao T.; Miwa S.; Kimura K.; Yasuda T.; Kuo L. H.; Kimura K.

Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces

Kuo L. H.; Kimura K.; Ohtake A.; Miwa S.; Yasuda T.; Yao T.

Nature and origins of stacking faults from a ZnSe/GaAs interface

Yasuda T.; Kimura K.; Miwa S.; Kuo L. H.; Ohtake A.; Jin C. G.; Tanaka K.; Yao T.

Reflectance-difference studies of interface-formation and initial-growth processes in ZnSe/GaAs(001) heteroepitaxy

Komura Takuji; Yoshimura Masamichi; Yao Takafumi

Atomic-Scale Negative Differential Conductance Observed at B-Type Surface Steps on the Si(001)–2×1 Surface

Bagnall D. M.; Chen Y. F.; Zhu Z.; Yao T.; Koyama S.; Shen M. Y.; Goto T.

Optically pumped lasing of ZnO at room temperature

Miwa Shiro; Kuo Li Hsin; Kimura Kozo; Yasuda Tetsuji; Yao Takafumi

Structural Change of As-Stabilized GaAs(001)-(2×4) and -;c(4×4) Induced by Zinc Exposure

Jung H. D.; Song C. D.; Wang S. Q.; Arai K.; Wu Y. H.; Zhu Z.; Yao T.; Katayama-Yoshida H.

Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique

Lu Fang; Wang Shouqi; Jung Hyundon; Zhu Ziqiang; Yao Takafumi

Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe

Uda Satoshi; Adachi Kazunori; Inaba Katsuhiko; Yao Takafumi; Kasuya Atsuo; Fukuda Tsuguo

High Upconversion Intensity of Er³⁺ in a LaF3 Thin Film on CaF2 (111) Grown by the Molecular Beam Epitaxy Method

Kimura K.; Miwa S.; Yasuda T.; Kuo L. H.; Jin C. G.; Tanaka K.; Yao T.

Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source

Tomiye Hideto; Yao Takafumi; Kawami Hiroshi; Hayashi Tsukasa

Nanometer‐scale characterization of SiO;2/Si with a scanning capacitance microscope

Tomasini P.; Wu Y. H.; Arai K.; Yao T.

Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates

Kuo L. H.; Kimura K.; Miwa S.; Yasuda T.; Yao T.

Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs

Yasuda T.; Kimura K.; Miwa S.; Kuo L. H.; Jin C. G.; Tanaka K.; Yao T.

Measurement of Interface‐Induced Optical Anisotropies of a Semiconductor Heterostructure; ZnSe;/GaAs(100)

Yasuda T.; Kuo L. H.; Kimura K.; Miwa S.; Jin C. G.; Tanaka K.; Yao T.

Insitu characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopy

Kuo L. H.; Kimura K.; Yasuda T.; Miwa S.; Jin C. G.; Tanaka K.; Yao T.

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

Wu Yi-hong; Arai Kenta; Yao Takafumi

Temperature dependence of the photoluminescence of ZnSe/ZnS quantum‐dot structures

Komura T.; Yoshimura M.; Yao T.

Atomic structure of the steps on Si(001) studied by scanning tunneling microscopy

Yoshimura M.; Takahashi E.; Yao T.

Initial stages of the nitridation of the Si(111) surface observed by scanning tunneling microscopy

Yoshimura M.; Shinabe S.; Yao T.

Scanning tunneling microscopy study of the interfacial structure of nickel silicides

Ohtsuka Takeo; Akiyama Naoki; Horie Kayoko; Yao Takafumi

Gas‐source molecular beam epitaxy of ZnSe using elemental Zn and hydrogen selenide

Ohtsuka Takeo; Yoshimura Masashi; Morita Katsuhiko; Koyama Masataka; Yao Takafumi

Low resistance ohmic contact for p‐type ZnTe using Au electrode