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Yamaguchi, Masafumi

Computed

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Research Profile

Latest Publications

1.
2012

Han Xiuxun; Tanaka Tomohiro; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi; Sato Shinichiro

Growth orientation dependent photoluminescence of GaAsN alloys
Appl. Phys. Lett. 100, 032108 (2012)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
2.
2011

Sasaki Takuo; Suzuki Hidetoshi; Takahasi Masamitu; Ohshita Yoshio; Kamiya Itaru; Yamaguchi Masafumi

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth
J. Appl. Phys. 110, 113502 (2011)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
3.
2011

Honda Takahiko; Ikeda Kazuma; Inagaki Makoto; Suzuki Hidetoshi; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi

Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
Jpn. J. Appl. Phys., Part 1 50, 08KD06 (2011)
Toyota Technological Institute, Nagoya 468-8511, Japan

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All Publications

1.
2012

Han Xiuxun; Tanaka Tomohiro; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi; Sato Shinichiro

Growth orientation dependent photoluminescence of GaAsN alloys
Appl. Phys. Lett. 100, 032108 (2012)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
2.
2011

Sasaki Takuo; Suzuki Hidetoshi; Takahasi Masamitu; Ohshita Yoshio; Kamiya Itaru; Yamaguchi Masafumi

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth
J. Appl. Phys. 110, 113502 (2011)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
3.
2011

Honda Takahiko; Ikeda Kazuma; Inagaki Makoto; Suzuki Hidetoshi; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi

Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
Jpn. J. Appl. Phys., Part 1 50, 08KD06 (2011)
Toyota Technological Institute, Nagoya 468-8511, Japan
4.
2011

Elfiky Dalia; Yamaguchi Masafumi; Sasaki Takuo; Elnawawy Mohamed; Eldesouky Tarek; Ghitas Ahmed

Numerical Analysis for Radiation Resistant InGaP Solar Cell
Jpn. J. Appl. Phys., Part 1 50, 072301 (2011)
Toyota Technological Institute, Nagoya 468-8511, Japan
5.
2011

Bouzazi Boussairi; Lee Jong-Han; Suzuki Hidetoshi; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi

Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 50, 051001 (2011)
Toyota Technological Institute, Nagoya 468-8511, Japan
6.
2010

Elfiky Dalia; Yamaguchi Masafumi; Sasaki Takuo; Takamoto Tatsuya; Morioka Chiharu; Imaizumi Mitsuru; Ohshima Takeshi; Sato Shin-ichiro; Elnawawy Mohamed; Eldesuky Tarek; Ghitas Ahmed

Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
Jpn. J. Appl. Phys., Part 1 49, 121202 (2010)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
7.
2010

Elfiky Dalia; Yamaguchi Masafumi; Sasaki Takuo; Takamoto Tatsuya; Morioka Chiharu; Imaizumi Mitsuru; Ohshima Takeshi; Sato Shin-ichiro; Elnawawy Mohamed; Eldesoky Tarek; Ghitas Ahmed

Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
Jpn. J. Appl. Phys., Part 1 49, 121201 (2010)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
8.
2010

Bouzazi Boussairi; Suzuki Hidetoshi; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi

Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 49, 121001 (2010)
Toyota Technological Institute, Nagoya 468-8511, Japan
9.
2010

Suzuki Hidetoshi; Sasaki Takuo; Sai Akihisa; Ohshita Yoshio; Kamiya Itaru; Yamaguchi Masafumi; Takahasi Masamitu; Fujikawa Seiji

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth
Appl. Phys. Lett. 97, 041906 (2010)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
10.
2010

Bouzazi Boussairi; Suzuki Hidetoshi; Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi

Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
Appl. Phys. Express 3, 051002 (2010)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
11.
2008

Nishimura Kenichi; Suzuki Hidetoshi; Saito Kenji; Ohshita Yoshio; Kojima Nobuaki; Yamaguchi Masafumi

Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 47, 2072 (2008)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
12.
2007

Lee Hae-Seok; Yamaguchi Masafumi; Ekins-Daukes Nicholas J.; Khan Aurangzeb; Takamoto Tatsuya; Imaizumi Mitsuru; Ohshima Takeshi; Itoh Hisayoshi

Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
Jpn. J. Appl. Phys., Part 2 46, L645 (2007)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
13.
2007

Sai Hitoshi; Fujii Homare; Arafune Koji; Ohshita Yoshio; Kanamori Yoshiaki; Yugami Hiroo; Yamaguchi Masafumi

Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
Jpn. J. Appl. Phys., Part 1 46, 3333 (2007)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
14.
2007

Nishimura Kenichi; Lee Hae-Seok; Suzuki Hidetoshi; Ohshita Yoshio; Yamaguchi Masafumi

Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
Jpn. J. Appl. Phys., Part 1 46, 2844 (2007)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
15.
2006

Sai Hitoshi; Fujii Homare; Arafune Koji; Ohshita Yoshio; Yamaguchi Masafumi; Kanamori Yoshiaki; Yugami Hiroo

Antireflective subwavelength structures on crystalline Si fabricated using directly formed anodic porous alumina masks
Appl. Phys. Lett. 88, 201116 (2006)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
16.
2005

Lee H. S.; Yamaguchi M.; Ekins-Daukes N. J.; Khan A.; Takamoto T.; Agui T.; Kamimura K.; Kaneiwa M.; Imaizumi M.; Ohshima T.; Itoh H.

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells
J. Appl. Phys. 98, 093701 (2005)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
17.
2005

Adachi M.; Khan A.; Ando K.; Ekins-Daukes N. J.; Lee H. S.; Yamaguchi M.

Electrical and optical properties of radiation-induced dominant recombination center in InxGa1-x;P space solar cells
Phys. Rev. B 72, 155320 (2005)
Venture Business Laboratory, Tottori University, Koyama, Tottori 680, Japan
18.
2004

Narayanan Kannan L; Soga Tetsuo; Tokunaga Tomoharu; Yamaguchi Masafumi

Ion Implantation Effects of Microcrystalline and Nanocrystalline Diamond Thin Films
Jpn. J. Appl. Phys., Part 1 43, 7971 (2004)
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
19.
2004

Sai Hitoshi; Kamikawa Takahiro; Kanamori Yoshiaki; Hane Kazuhiro; Yugami Hiroo; Yamaguchi Masafumi

Thermophotovoltaic Generation with Microstructured Tungsten Selective Emitters
AIP Conf. Proc. 738, 206 (2004)
Gruduate school of Engineering, Tohoku University, Aoba 01, Aramaki, Aoba‐ku, Sendai, 980‐8579 JAPAN;
20.
2004

Khan Aurangzeb; Marupaduga S.; Anandakrishnan S. S.; Alam M.; Ekins-Daukes N. J.; Lee H. S.; Sasaki T.; Takamoto T.; Agui T.; Kamimura K.; Kaneiwa M.; Yamaguchi M.; Imazumi M.

Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics
Appl. Phys. Lett. 85, 5218 (2004)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
21.
2004

Khan Aurangzeb; Yamaguchi Masafumi; Takamoto Tatsuya

Performance of single-junction and dual-junction InGaP/;GaAs solar cells under low concentration ratios
Appl. Phys. Lett. 85, 3098 (2004)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
22.
2004

Ekins-Daukes N. J.; Lee H. S.; Sasaki T.; Yamaguchi M.; Khan A.; Takamoto T.; Agui T.; Kamimura K.; Kaneiwa M.; Imaizumi M.; Ohshima T.; Kamiya T.

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation
Appl. Phys. Lett. 85, 2511 (2004)
Toyota Technological Institute 2-12-1 Hisakata, Tempaku-ku Nagoya, 468-8511, Japan
23.
2004

Narayanan Kannan L.; Ekins-Daukes Nicholas J.; Soga Tetsuo; Yamaguchi Masafumi

Rectifying I–V Characteristics of n‐Type Fluorine Implanted a‐C/p‐Type Si Heterojunction Diodes
Jpn. J. Appl. Phys., Part 2 43, L24 (2004)
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466‐8555, Japan;
24.
2003

Narayanan Kannan L.; Soga Tetsuo; Oshita Yoshio; Yamaguchi Masafumi

Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
Jpn. J. Appl. Phys., Part 2 42, L1021 (2003)
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466‐8555, Japan;
25.
2003

Nagata Seiichi; Matsushita Shinobu; Saito Kazuya; Ohshita Yoshio; Maeda Yoshinobu; Yamaguchi Masafumi; Ikushima Akira J.

Silica waveguides fabricated by oxidization of selectively anodized porous silicon
Appl. Phys. Lett. 82, 2559 (2003)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan;
26.
2003

Fahim N. F.; Kojima N.; Yamaguchi M.; Ohshita Y.; Barsoum B. N.; Eid A. E.

Temperature dependence of electron spin resonance and electrical conductivity in P⁺-implanted C60 films and their derivatives
J. Appl. Phys. 93, 2671 (2003)
Semiconductor Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, Japan;
27.
2002

Kawakita Shirou; Imaizumi Mitsuru; Yamaguchi Masafumi; Kushiya Katsumi; Ohshima Takeshi; Itoh Hisayoshi; Matsuda Sumio

Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin‐Film Solar Cells
Jpn. J. Appl. Phys., Part 2 41, L797 (2002)
National Space Development Agency of Japan, 2‐1‐1 Sengen, Tsukuba, Ibaraki 305‐8505, Japan;
28.
2002

Dharmarasu Nethaji; Yamaguchi Masafumi; Bourgoin Jacques C.; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

Majority- and minority-carrier deep level traps in proton-irradiated n⁺/p-InGaP space solar cells
Appl. Phys. Lett. 81, 64 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
29.
2002

Vu Tuong Khanh; Araki Kenji; Ohshita Yoshio; Yamaguchi Masafumi

Generation and annihilation of boron–oxygen related defects in boron-doped Czochralski-grown Si solar cells
J. Appl. Phys. 91, 4853 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan;
30.
2002

Ohshita Yoshio; Vu Tuong Khanh; Yamaguchi Masafumi

Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon
J. Appl. Phys. 91, 3741 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
31.
2002

Khan Aurangzeb; Yamaguchi Masafumi; Dharmaso Nothaj; Bourgoin Jacques; Ando Koshi; Takamoto Tatsuya

Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation‐Induced Defects in p‐InGaP and InGaP‐based Solar Cells
Jpn. J. Appl. Phys., Part 1 41, 1241 (2002)
Toyota Technological Institute, 2‐12‐1 Hisakata, Tempaku, Nagoya 468‐8511, Japan;
32.
2002

Dharmarasu Nethaji; Khan A.; Yamaguchi Masafumi; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

Effects of proton irradiation on n⁺p InGaP solar cells
J. Appl. Phys. 91, 3306 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
33.
2002

Narayanan K. L.; Yamaguchi M.; Azuma H.

Excimer-laser-irradiation-induced effects in C60 films for photovoltaic applications
Appl. Phys. Lett. 80, 1285 (2002)
Semiconductor Research Center, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468 8511, Japan;
34.
2002

Khan Aurangzeb; Yamaguchi Masafumi; Bourgoin Jacques C.; Takamoto Tatsuya

Thermal annealing study of 1 MeV electron-irradiation-induced defects in n⁺p InGaP diodes and solar cells
J. Appl. Phys. 91, 2391 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
35.
2001

Kojima Nobuaki; Ohshita Yoshio; Yamaguchi Masafumi

Fabrication of C60/amorphous carbon superlattice structures
AIP Conf. Proc. 590, 349 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
36.
2001

Dharmarasu Nethaji; Yamaguchi Masafumi; Khan Aurangzeb; Yamada Takashi; Tanabe Tatsuya; Takagishi Shigenori; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
Appl. Phys. Lett. 79, 2399 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
37.
2001

Khan Aurangzeb; Yamaguchi Masafumi; Ohshita Y.; Imaizumi M.; Ohshima T.; Itoh Hisayoshi; Abe Takao; Araki K.; Dharmarasu N.; Matsuda S.

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
J. Appl. Phys. 90, 1170 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
38.
2001

Khan Aurangzeb; Imaizumi Mitsuru; Ohshima Takeshi; Itoh Hisayoshi; Takagishi Shigenori; Tanabe Tatsuya; Yamada Takashi; Dharmaras Nathaji; Yamaguchi Masafumi; Matsuda Sumio

Radiation Resistant Low Bandgap InGaAsP Solar Cell for Multi-Junction Solar Cells
Jpn. J. Appl. Phys., Part 2 40, L728 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
39.
2001

Narayanan K. L.; Yamaguchi M.

Phosphorous ion implantation in C60 for the photovoltaic applications
J. Appl. Phys. 89, 8331 (2001)
Semiconductor Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468 8511, Japan;
40.
2001

Khan Aurangzeb; Yamaguchi Masafumi; Bourgoin Jacques C.; Ando Koshi; Takamoto Tatsuya

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP
J. Appl. Phys. 89, 4263 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
41.
2001

Dharmarasu N.; Ohshita Y.; Yamaguchi M.; Kojima N.; Sakai T.; Narayanan K. L.

Electrical and optical properties of the B⁺ and P⁺ implanted C60 thin films
J. Appl. Phys. 89, 318 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
42.
2000

Imaizumi Mitsuru; Yamaguchi Koji; Okitsu Kazuhiko; Yamaguchi Masafumi; Hara Tamio; Ito Tadashi; Konomi Ichiro; Jones Kim M.; Al-Jassim Mowafak M.

Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition
J. Appl. Phys. 88, 6848 (2000)
National Space Development Agency of Japan (NASDA), 2-1-1 Sengen Tsukuba, Ibaraki 305-8505, Japan;
43.
2000

Ito Tadashi; Ban Masahito; Imaizumi Mitsuru; Yamaguchi Koji; Okitsu Kazuhiko; Konomi Ichiro; Yamaguchi Masafumi; Hara Tamio; Tohkai Masakuni; Kawamura Kazuhiko

Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
Jpn. J. Appl. Phys., Part 1 39, 6035 (2000)
Toyota Central Research & Development Laboratories, Inc., Nagakute-cho, Aichi-gun, Aichi 480-1192, Japan;
44.
2000

Khan Aurangzeb; Annzawa Osamu; Abe Takao; Saga Tatsue; Kaneiwa Minoru; Yamaguchi Masafumi; Matsuda Sumio

Erratum: “Influence of the dopant species on radiation-induced defects in Si single crystals” [J. Appl. Phys. ;87, 8389 (2000)]
J. Appl. Phys. 88, 3785 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
45.
2000

Khan Aurangzeb; Annzawa Osamu; Abe Takao; Saga Tatsue; Kaneiwa Minoru; Yamaguchi Masafumi; Matsuda Sumio

Influence of the dopant species on radiation-induced defects in Si single crystals
J. Appl. Phys. 87, 8389 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
46.
2000

Khan Aurangzeb; Kojima Nobuaki; Yamaguchi Masafumi; Narayanan K. L.; Goetzberger Oliver

High-energy electron irradiation effects in C60 films
J. Appl. Phys. 87, 4620 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
47.
2000

Khan Aurangzeb; Yamaguchi Masafumi; Bourgoin Jacques C.; de Angelis N.; Takamoto Tatsuya

Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
Appl. Phys. Lett. 76, 2559 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
48.
2000

Kojima Nobuaki; Yamaguchi Masafumi; Ishikawa Naomi

Analysis of photovoltaic properties of C60-Si heterojunction solar cells
Jpn. J. Appl. Phys., Part 1 39, 1176 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
49.
2000

Khan Aurangzeb; Yamaguchi Masafumi; Hisamatsu Tadashi; Matsuda Sumio

Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation
J. Appl. Phys. 87, 2162 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
50.
1999

Narayanan K. L.; Yamaguchi M.

Boron ion-implanted C60 heterojunction photovoltaic devices
Appl. Phys. Lett. 75, 2106 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
51.
1999

Yamaguchi Masafumi; Khan Aurangzeb; Taylor Stephen J.; Ando Koshi; Yamaguchi Tsutomu; Matsuda Sumio; Aburaya Takashi

Deep level analysis of radiation-induced defects in Si crystals and solar cells
J. Appl. Phys. 86, 217 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8611, Japan
52.
1999

Khan Aurangzeb; Yamaguchi Masafumi; Taylor Stephen J.; Hisamatsu Tadashi; Matsuda Sumio

Effects of annealing on type converted Si and space solar cells irradiated with heavy fluence 1 MeV electrons
Jpn. J. Appl. Phys., Part 1 38, 2679 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
53.
1999

Yamaguchi Hiromi; Yamaguchi Masafumi

Thermophotovoltaic potential applications for civilian and industrial use in Japan
AIP Conf. Proc. 460, 17 (1999)
Ishikawajima-Harima Heavy Industries Co., Ltd., 3-1-15 Toyosu, Koto-ku, Tokyo, 135-8732, Japan
54.
1999

Imaizumi Mitsuru; Taylor Stephen J.; Yamaguchi Masafumi; Ito Tadashi; Hisamatsu Tadashi; Matsuda Sumio

Analysis of structure change of Si solar cells irradiated with high fluence electrons
J. Appl. Phys. 85, 1916 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan;
55.
1998

Imaizumi Mitsuru; Okitsu Kazuhiko; Yamaguchi Masafumi; Hara Tamio; Ito Tadashi; Konomi Ichiro; Ban Masahito; Tokai Masakuni; Kawamura Kazuhiko

Growth of microcrystalline silicon film by electron beam excited plasma chemical vapor deposition without hydrogen dilution
J. Vac. Sci. Technol. A 16, 3134 (1998)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan;
56.
1998

Khan Aurangzeb; Iqbal Mohd Zafar; Qurashi Umar Saeed; Yamaguchi Masafumi; Zafar Nasim; Dadgar Armin; Bimberg D.

Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition
Jpn. J. Appl. Phys., Part 1 37, 4595 (1998)
Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan
57.
1998

Yang Ming-Ju; Yang Jia-Lin; Yamaguchi Masafumi

Analysis of heteroepitaxial AlGaAs/Si tandem solar cell for concentrator applications
Jpn. J. Appl. Phys., Part 2 37, L849 (1998)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, Japan
58.
1998

Yang Mingju; Takamoto Tatsuya; Ikeda Eiji; Kurita Hiroshi; Yamaguchi Masafumi

Investigation of high-efficiency InGaP/GaAs tandem solar cells under concentration operation
Jpn. J. Appl. Phys., Part 2 37, L836 (1998)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan;
59.
1998

Taylor S. J.; Yamaguchi M.; Yamaguchi T.; Watanabe S.; Ando K.; Matsuda S.; Hisamatsu T.; Kim S. I.

Comparison of the effects of electron and proton irradiation on n⁺–p–p;⁺ silicon diodes
J. Appl. Phys. 83, 4620 (1998)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan;
60.
1998

Yamaguchi T.; Taylor S. J.; Watanabe S.; Ando K.; Yamaguchi M.; Hisamatsu T.; Matsuda S.

Explanation for carrier removal and type conversion in irradiated silicon solar cells
Appl. Phys. Lett. 72, 1226 (1998)
Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, Japan;
61.
1997

Takamoto Tatsuya; Ikeda Eiji; Kurita Hiroshi; Ohmori Masamichi; Yamaguchi Masafumi; Yang Ming-Ju

Two-Terminal Monolithic In0.5Ga0.5P/GaAs Tandem Solar Cells with a High Conversion Efficiency of Over 30%
Jpn. J. Appl. Phys., Part 1 36, 6215 (1997)
Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335, Japan
62.
1997

Taylor S. J.; Yamaguchi M.; Imaizumi M.; Ito T.

Improved model of radiation damage to silicon solar cells
J. Appl. Phys. 82, 3627 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
63.
1997

Taylor S. J.; Yamaguchi M.; Matsuda S.; Hisamatsu T.; Kawasaki O.

Investigation of carrier removal in electron irradiated silicon diodes
J. Appl. Phys. 82, 3239 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
64.
1997

Imaizumi Mitsuru; Ito Tadashi; Yamaguchi Masafumi; Kaneko Kyojiro

Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells
J. Appl. Phys. 81, 7635 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan
65.
1997

Yamaguchi Masafumi; Takamoto Tatsuya; Taylor Stephen J.; Walters Robert J.; Summers Geoffrey P.; Flood Dennis J.; Ohmori Masamichi

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation
J. Appl. Phys. 81, 6013 (1997)
Toyota Technological Institute, 2-12 Hisakata, Tempaku, Nagoya 468, Japan
66.
1997

Yamaguchi Masafumi; Okuda Takeshi; Taylor Stephen J.

Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cells
Appl. Phys. Lett. 70, 2180 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
67.
1997

Taylor Stephen J.; Yamaguchi Masafumi; Yang Ming-Ju; Imaizumi Mitsuru; Matsuda Sumio; Kawasaki Osamu; Hisamatsu Tadashi

Type conversion in irradiated silicon diodes
Appl. Phys. Lett. 70, 2165 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
68.
1997

Yamaguchi Masafumi; Okuda Takeshi; Taylor Stephen J.; Takamoto Tatsuya; Ikeda Eiji; Kurita Hiroshi

Superior radiation-resistant properties of InGaP/GaAs tandem solar cells
Appl. Phys. Lett. 70, 1566 (1997)
Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
69.
1997

Yamaguchi Masafumi; Takamoto Tatsuya; Ohmori Masamichi

Analysis of the anomalous spectral response of InP solar cells induced by high fluence proton irradiation
J. Appl. Phys. 81, 1116 (1997)
Toyota Technological Institute, 2-12 Hisakata, Tempaku, Nagoya 468, Japan
70.
1996

Yamaguchi Masafumi; Taylor Stephen J.; Yang Ming-Ju; Matsuda Sumio; Kawasaki Osamu; Hisamatsu Tadashi

High‐energy and high‐fluence proton irradiation effects in silicon solar cells
J. Appl. Phys. 80, 4916 (1996)
Toyota Technological Institute, 2‐12 Hisakata, Tempaku, Nagoya 468, Japan;
71.
1996

Yamaguchi Masafumi; Taylor Stephen J.; Matsuda Sumio; Kawasaki Osamu

Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation
Appl. Phys. Lett. 68, 3141 (1996)
Toyota Technological Institute, 2‐12 Hisakata, Tempaku, Nagoya 468, Japan;

Co-authors

Co-publications
21

Khan, Aurangzeb
18

Matsuda, Sumio
18

Imaizumi, Mitsuru
18

Ohshita, Yoshio
13

Taylor, Stephen J.
11

Ohshima, Takeshi
11

Kojima, Nobuaki
10

Takamoto, Tatsuya
8

Hisamatsu, Tadashi
8

Itoh, Hisayoshi
8

Suzuki, Hidetoshi
6

Ekins-Daukes, NJ
6

Ando, Koshi
5

Bourgoin, Jacques C.
5

Dharmarasu, Nethaji