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Wessels, Bruce W.

Computed

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Research Profile

Latest Publications

1.
2011

Bhowmick Mithun; Merritt Travis; Khodaparast Giti A.; Feeser Caitlin; Wessels Bruce W.; McGill Stephen; Saha D.; Pan X.; Sanders G. D.; Stanton C. J.

Time Resolved Spectroscopy of MOVPE Grown Narrow Gap Ferromagnetic Semiconductors
AIP Conf. Proc. 1416, 188 (2011)
Department of Physics, Virginia Tech, Blacksburg, VA 24061 USA
2.
2011

Peters J. A.; Rangaraju N.; Feeser C.; Wessels B. W.

Spin-dependent magnetotransport in a p-InMnSb/n-InSb magnetic semiconductor heterojunction
Appl. Phys. Lett. 98, 193506 (2011)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA
3.
2010

Peters J. A.; Parashar N. D.; Rangaraju N.; Wessels B. W.

Magnetotransport properties of InMnSb magnetic semiconductor thin films
Phys. Rev. B 82, 205207 (2010)
Materials Research Center, Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA

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All Publications

1.
2011

Bhowmick Mithun; Merritt Travis; Khodaparast Giti A.; Feeser Caitlin; Wessels Bruce W.; McGill Stephen; Saha D.; Pan X.; Sanders G. D.; Stanton C. J.

Time Resolved Spectroscopy of MOVPE Grown Narrow Gap Ferromagnetic Semiconductors
AIP Conf. Proc. 1416, 188 (2011)
Department of Physics, Virginia Tech, Blacksburg, VA 24061 USA
2.
2011

Peters J. A.; Rangaraju N.; Feeser C.; Wessels B. W.

Spin-dependent magnetotransport in a p-InMnSb/n-InSb magnetic semiconductor heterojunction
Appl. Phys. Lett. 98, 193506 (2011)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA
3.
2010

Peters J. A.; Parashar N. D.; Rangaraju N.; Wessels B. W.

Magnetotransport properties of InMnSb magnetic semiconductor thin films
Phys. Rev. B 82, 205207 (2010)
Materials Research Center, Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
4.
2010

Rangaraju N.; Peters J. A.; Wessels B. W.

Magnetoamplification in a Bipolar Magnetic Junction Transistor
Phys. Rev. Lett. 105, 117202 (2010)
Materials Research Center, Northwestern University, Evanston, Illinois, USA
5.
2010

Li Jianheng; Liu Zhifu; Wessels B. W.

Study of domain reversal and its field-dependence in epitaxial BaTiO3 thin films
J. Appl. Phys. 107, 124106 (2010)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
6.
2010

Wells Daniel M.; Cheng J.; Ellis Donald E.; Wessels B. W.

Local electronic and magnetic structure of mixed ferrite multilayer materials
Phys. Rev. B 81, 174422 (2010)
Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA
7.
2010

Thompson S. M.; Lazarov V. K.; Bradley R. C.; Deakin T.; Kaeswurm B.; Sterbinsky G. E.; Cheng J.; Wessels B. W.

Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films
J. Appl. Phys. 107, 09B102 (2010)
Department of Physics, The University of York, Heslington YO10 5DD, United Kingdom
8.
2010

Parashar N. D.; Rangaraju N.; Lazarov V. K.; Xie S.; Wessels B. W.

High-temperature ferromagnetism in epitaxial (In,Mn)Sb films
Phys. Rev. B 81, 115321 (2010)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA
9.
2010

Sterbinsky G. E.; Wessels B. W.; Kim J.-W.; Karapetrova E.; Ryan P. J.; Keavney D. J.

Strain-driven spin reorientation in magnetite/barium titanate heterostructures
Appl. Phys. Lett. 96, 092510 (2010)
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108, USA
10.
2009

Li Jianheng; Lin Pao Tai; Wessels B. W.

Polarization reversal and backswitching dynamics in epitaxial BaTiO3 thin films
J. Appl. Phys. 106, 054113 (2009)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
11.
2009

Cheng J.; Lazarov V. K.; Sterbinsky G. E.; Wessels B. W.

Synthesis, structural and magnetic properties of epitaxial MgFe2O4 thin films by molecular beam epitaxy
J. Vac. Sci. Technol. B 27, 148 (2009)
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Dr., Evanston, Illinois 60208-3108 and Materials Research Center, Northwestern University, 2220 Campus Dr., Evanston, Illinois 60208-3108
12.
2008

Xie S.; Cheng J.; Wessels B. W.; Dravid V. P.

Interfacial structure and chemistry of epitaxial CoFe2O4 thin films on SrTiO3 and MgO substrates
Appl. Phys. Lett. 93, 181901 (2008)
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108, USA
13.
2008

Liu Zhifu; Meier A. L.; Wessels B. W.

Dynamic response of polydomain ferroelectric barium titanate epitaxial thin films and its field dependence
J. Appl. Phys. 104, 064115 (2008)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA
14.
2008

Rangaraju N.; Wessels B. W.

Magnetocapacitance effect in InMnAs/;InAsp-n heterojunctions
J. Vac. Sci. Technol. B 26, 1526 (2008)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
15.
2008

Lin Pao Tai; Wessels B. W.; Jang Joon I.; Ketterson J. B.

Highly efficient broadband second harmonic generation using polydomain epitaxial barium titanate thin film waveguides
Appl. Phys. Lett. 92, 221103 (2008)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
16.
2007

Chiu P. T.; Wessels B. W.

Dependence of magnetic circular dichroism on doping and temperature in In1-x;MnxAs epitaxial films
Phys. Rev. B 76, 165201 (2007)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA
17.
2007

Zheng J. G.; Sterbinsky G. E.; Cheng J.; Wessels B. W.

Epitaxial Fe3O4 on SrTiO3 characterized by transmission electron microscopy
J. Vac. Sci. Technol. B 25, 1520 (2007)
Department of Materials Science and Engineering, Materials Research Center, and EPIC-NUANCE Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208–3108;
18.
2007

Sterbinsky G. E.; Cheng J.; Chiu P. T.; Wessels B. W.; Keavney D. J.

Investigation of heteroepitaxial growth of magnetite thin films
J. Vac. Sci. Technol. B 25, 1389 (2007)
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108
19.
2007

Liu Zhifu; Lin Pao-Tai; Wessels Bruce W.; Yi Fei; Ho Seng-Tiong

Nonlinear photonic crystal waveguide structures based on barium titanate thin films and their optical properties
Appl. Phys. Lett. 90, 201104 (2007)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 and Materials Research Center, Northwestern University, Evanston, Illinois 60208
20.
2007

Niu F.; Wessels B. W.

Epitaxial growth and strain relaxation of BaTiO3 thin films on SrTiO3 buffered (001) Si by molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 1053 (2007)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
21.
2006

Niu F.; Meier A. L.; Wessels B. W.

Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 24, 2586 (2006)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
22.
2006

Chiu P. T.; Wessels B. W.

Evidence of room temperature sp-d exchange in InMnAs epitaxial films
Appl. Phys. Lett. 89, 102505 (2006)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 and Materials Research Center, Northwestern University, Evanston, Illinois 60208
23.
2006

May S. J.; Phillips P. J.; Wessels B. W.

Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions
J. Appl. Phys. 100, 053912 (2006)
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208 and Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208
24.
2006

Han B.; Wessels B. W.; Ulmer M. P.

Investigation of nanoscale composition fluctuations in InGaN using optical transmission spectroscopy and near-field scanning optical microscopy
J. Appl. Phys. 99, 084312 (2006)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
25.
2006

Chiu P. T.; May S. J.; Wessels B. W.

Origin of uniaxial magnetic anisotropy in epitaxial InMnAs thin films
J. Appl. Phys. 99, 083907 (2006)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
26.
2006

May S. J.; Wessels B. W.

High-field magnetoresistance in p-(In,Mn)As/n-;InAs heterojunctions
Appl. Phys. Lett. 88, 072105 (2006)
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208
27.
2005

Han B.; Wessels B. W.; Ulmer M. P.

Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy
J. Appl. Phys. 98, 023513 (2005)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
28.
2005

May S. J.; Wessels B. W.

Electronic and magnetotransport properties of ferromagnetic p-(In,Mn)As/;n-InAs heterojunctions
J. Vac. Sci. Technol. B 23, 1769 (2005)
Department of Materials Science and Engineering Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208 USA
29.
2005

Dhote A. M.; Meier A. L.; Towner D. J.; Wessels B. W.; Ni J.; Marks T. J.

Low temperature deposition of epitaxial BaTiO3 films in a rotating disk vertical MOCVD reactor
J. Vac. Sci. Technol. B 23, 1674 (2005)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
30.
2005

Chiu P. T.; May S. J.; Blattner A. J.; Wessels B. W.

Magnetic Anisotropy In Epitaxial InMnAs
AIP Conf. Proc. 772, 347 (2005)
Department of Materials Science and Engineering, Northwestern University, Evanston IL 60208
31.
2005

Chiu P. T.; Wessels B. W.; Keavney D. J.; Freeland J. W.

Local environment of ferromagnetically ordered Mn in epitaxial InMnAs
Appl. Phys. Lett. 86, 072505 (2005)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston Illinois 60208
32.
2005

Han B.; Wessels B. W.; Ulmer M. P.

Optical investigation of electronic states of Mn⁴⁺ ions in p-type GaN
Appl. Phys. Lett. 86, 042505 (2005)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
33.
2004

Tang Pingsheng; Towner D. J.; Meier A. L.; Wessels B. W.

Low-voltage, polarization-insensitive, electro-optic modulator based on a polydomain barium titanate thin film
Appl. Phys. Lett. 85, 4615 (2004)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
34.
2004

May S. J.; Blattner A. J.; Wessels B. W.

Negative magnetoresistance in (In,Mn)As semiconductors
Phys. Rev. B 70, 073303 (2004)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, USA
35.
2004

Chiu P. T.; May S. J.; Wessels B. W.

Room-temperature magneto-optical activity of InMnAs thin films
Appl. Phys. Lett. 85, 780 (2004)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Ilinois 60208
36.
2004

Han B.; Korotkov R. Y.; Wessels B. W.; Ulmer M. P.

Optical properties of Mn⁴⁺ ions in GaN:Mn codoped with Mg acceptors
Appl. Phys. Lett. 84, 5320 (2004)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
37.
2004

Soo Y. L.; Kim S.; Kao Y. H.; Blattner A. J.; Wessels B. W.; Khalid S.; Sanchez Hanke C.; Kao C.-C.

Local structure around Mn atoms in room-temperature ferromagnetic (In,Mn)As thin films probed by extended x-ray absorption fine structure
Appl. Phys. Lett. 84, 481 (2004)
Department of Physics, State University of New York at Buffalo, Amherst, New York, 14260
38.
2003

Hamano T.; Towner D. J.; Wessels B. W.

Relative dielectric constant of epitaxial BaTiO3 thin films in the GHz frequency range
Appl. Phys. Lett. 83, 5274 (2003)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
39.
2003

Han B.; Gregie J. M.; Wessels B. W.

Blue emission band in compensated GaN:Mg codoped with Si
Phys. Rev. B 68, 045205 (2003)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA;
40.
2003

Ahn K.; Wessels B. W.; Sampath S.

Dielectric properties of plasma‐spray‐deposited BaTiO;3 and Ba0.68Sr0.32TiO3 thick films
J. Mater. Res. 18, 1227 (2003)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
41.
2003

Nichols B. M.; Hoerman B. H.; Hwang J.-H.; Mason T. O.; Wessels B. W.

Phase stability of epitaxial KTaxNb1-;xO3 thin films deposited by metalorganic chemical vapor deposition
J. Mater. Res. 18, 106 (2003)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
42.
2002

Blattner A. J.; Wessels B. W.

Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy
J. Vac. Sci. Technol. B 20, 1582 (2002)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
43.
2002

Hoerman B. H.; Nichols B. M.; Wessels B. W.

Dynamic response of the dielectric and electro-optic properties of epitaxial ferroelectric thin films
Phys. Rev. B 65, 224110 (2002)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
44.
2002

Vlasenko L. S.; Bozdog C.; Watkins G. D.; Shahedipour F.; Wessels B. W.

Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN
Phys. Rev. B 65, 205202 (2002)
Department of Physics, Lehigh University, 16 Memorial Dr. East, Bethlehem, Pennsylvania 18015
45.
2002

Zolotoyabko E.; Quintana J. P.; Hoerman B. H.; Wessels B. W.

Fast time-resolved x-ray diffraction in BaTiO3 films subjected to a strong high-frequency electric field
Appl. Phys. Lett. 80, 3159 (2002)
Department of Materials Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel;
46.
2002

Korotkov R. Y.; Gregie J. M.; Wessels B. W.

Optical properties of the deep Mn acceptor in GaN:Mn
Appl. Phys. Lett. 80, 1731 (2002)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
47.
2002

Chattopadhyay Soma; Teren A. R.; Hwang Jin-Ha; Mason T. O.; Wessels B. W.

Diffuse phase transition in epitaxial BaTiO3 thin films
J. Mater. Res. 17, 669 (2002)
Materials Research Center and Materials Science & Engineering Department, Northwestern University, 2225 North Campus Drive, Evanston, Illinois 60208;
48.
2002

Chattopadhyay Soma; Nichols B. M.; Hwang Jin-Ha; Mason T. O.; Wessels B. W.

Dielectric properties of epitaxial KNbO3 ferroelectric thin films
J. Mater. Res. 17, 275 (2002)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
49.
2001

Korotkov R. Y.; Gregie J. M.; Wessels B. W.

Electrical properties of p-type GaN:Mg codoped with oxygen
Appl. Phys. Lett. 78, 222 (2001)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
50.
2001

Guha S.; Keller R. C.; Yang V.; Shahedipour F.; Wessels B. W.

Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing
Appl. Phys. Lett. 78, 58 (2001)
Department of Physics, Marquette University, Milwaukee, Wisconsin 53201-1881;
51.
2000

Ves S.; Venkateswaran U. D.; Loa I.; Syassen K.; Shahedipour F.; Wessels B. W.

Pressure dependence of the blue luminescence in Mg-doped GaN
Appl. Phys. Lett. 77, 2536 (2000)
Max-Plank-Institut für Festkörperforschung, D-70569 Stuttgart, Germany;
52.
2000

Niu F.; Hoerman B. H.; Wessels B. W.

Epitaxial thin films of MgO on Si using metalorganic molecular beam epitaxy
J. Vac. Sci. Technol. B 18, 2146 (2000)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
53.
2000

Shahedipour F.; Wessels B. W.

Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
Appl. Phys. Lett. 76, 3011 (2000)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
54.
2000

Reshchikov M. A.; Shahedipour F.; Korotkov R. Y.; Wessels B. W.; Ulmer M. P.

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
J. Appl. Phys. 87, 3351 (2000)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
55.
1999

Hoerman B. H.; Nichols B. M.; Nystrom M. J.; Wessels B. W.

Dynamic response of the electro-optic effect in epitaxial KNbO3
Appl. Phys. Lett. 75, 2707 (1999)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
56.
1999

Reshchikov M. A.; Yi G.-C.; Wessels B. W.

Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
Phys. Rev. B 59, 13176 (1999)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
57.
1998

Hoerman B. H.; Ford G. M.; Kaufmann L. D.; Wessels B. W.

Dielectric properties of epitaxial BaTiO3 thin films
Appl. Phys. Lett. 73, 2248 (1998)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;
58.
1998

Yi G.-C.; Block B. A.; Ford G. M.; Wessels B. W.

Luminescence quenching in Er-doped BaTiO3 thin films
Appl. Phys. Lett. 73, 1625 (1998)
Materials Research Center and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208;
59.
1997

Theiring Scott C.; Pillai Manoj R.; Barnett Scott A.; Wessels Bruce W.

Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures
J. Vac. Sci. Technol. B 15, 2026 (1997)
Dept. of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
60.
1997

Yi Gyu-Chul; Block Bruce A.; Wessels Bruce W.

Hydrogen complexes in epitaxial BaTiO3 thin films
Appl. Phys. Lett. 71, 327 (1997)
Department of Physics and Astronomy, Materials Research Center, Northwestern University, Evanston, Illinois 60208
61.
1997

Wessels B. W.

Morphological stability of strained-layer semiconductors
J. Vac. Sci. Technol. B 15, 1056 (1997)
Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
62.
1997

Yi Gyu-Chul; Wessels Bruce W.

Carbon–hydrogen complexes in vapor phase epitaxial GaN
Appl. Phys. Lett. 70, 357 (1997)
Department of Physics and Astronomy, Materials Research Center, Northwestern University, Evanston, Illinois 60208
63.
1996

Yi Gyu-Chul; Wessels Bruce W.

Compensation of n‐type GaN
Appl. Phys. Lett. 69, 3028 (1996)
Materials Research Center, Northwestern University, Evanston, Illinois 60208
64.
1996

Gill D. M.; Block B. A.; Conrad C. W.; Wessels B. W.; Ho S. T.

Thin film channel waveguides fabricated in metalorganic chemical vapor deposition grown BaTiO3 on MgO
Appl. Phys. Lett. 69, 2968 (1996)
Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
65.
1996

Chang K.-W.; Wessels B. W.; Studebaker D.; Marks T. J.

Epitaxial growth of (Sr1-;xCax)CuO2 thin film with the infinite‐layer structure by metal‐organic chemical vapor deposition
Appl. Phys. Lett. 69, 1951 (1996)
Department of Materials Science and Engineering, Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208
66.
1996

Gilbert S. R.; Thomas J. A.; Schindler J. L.; Wessels B. W.; Wills L. A.; Kannewurf C. R.

Electrical transport properties of epitaxial BaTiO3 thin films
J. Appl. Phys. 80, 969 (1996)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208‐3108;
67.
1996

Yi Gyu-Chul; Wessels Bruce W.

Deep level defects in n‐type GaN compensated with Mg
Appl. Phys. Lett. 68, 3769 (1996)
Materials Research Center, Northwestern University, Evanston, Illinois 60208
68.
1996

Ford G. M.; Wessels B. W.

Electroluminescence from forward‐biased Er‐doped GaP ;p‐;n junctions at room temperature
Appl. Phys. Lett. 68, 1126 (1996)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
69.
1996

Nystrom M. J.; Wessels B. W.; Chen J.; Marks T. J.

Microstructure of epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition
Appl. Phys. Lett. 68, 761 (1996)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208‐3113;
70.
1995

Wang X. Z.; Wessels B. W.

Photoluminescent properties of Er‐doped GaP deposited on Si
Appl. Phys. Lett. 67, 518 (1995)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
71.
1995

Nystrom M. J.; Wessels B. W.; Studebaker D. B.; Marks T. J.; Lin W. P.; Wong G. K.

Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 365 (1995)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
72.
1995

Gilbert S. R.; Wessels B. W.; Studebaker D. B.; Marks T. J.

Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition
Appl. Phys. Lett. 66, 3298 (1995)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
73.
1995

Chu D. Y.; Ho S. T.; Wang X. Z.; Wessels B. W.; Bi W. G.; Tu C. W.; Espindola R. P.; Wu S. L.

Observation of enhanced photoluminescence in erbium‐doped semiconductor microdisk resonator
Appl. Phys. Lett. 66, 2843 (1995)
Department of Electrical Engineering and Computer Science, The Technological Institute, Northwestern University, Evanston, Illinois 60208
74.
1995

Wessels Bruce W.

Ferroelectric oxide thin films for photonic applications
Proc. SPIE Int. Soc. Opt. Eng. 2397, 598 (1995)
Northwestern Univ. (USA)
75.
1995

Nystrom M. J.; Wessels B. W.; Lin W. P.; Wong G. K.; Neumayer D. A.; Marks T. J.

Nonlinear optical properties of textured strontium barium niobate thin films prepared by metalorganic chemical vapor deposition
Appl. Phys. Lett. 66, 1726 (1995)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
76.
1994

Wang X. Z.; Wessels B. W.

Effect of free carriers on the luminescence efficiency of InP:Er
Appl. Phys. Lett. 65, 845 (1994)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
77.
1994

Wang X. Z.; Wessels B. W.

Electroluminescence from Er‐doped GaP
Appl. Phys. Lett. 65, 584 (1994)
Department of Materials and Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
78.
1994

Buyanova I. A.; Neuhalfen A. J.; Wessels B. W.; Sheinkman M. K.

Symmetry of optically active Yb‐related centers in InP and In;1-;xGaxP (x≤0.13)
J. Appl. Phys. 76, 1180 (1994)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
79.
1994

Block B. A.; Wessels B. W.

Photoluminescence properties of Er3+‐doped BaTiO;3 thin films
Appl. Phys. Lett. 65, 25 (1994)
Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
80.
1994

Lu H. A.; Wills L. A.; Wessels B. W.

Electrical properties and poling of BaTiO3 thin films
Appl. Phys. Lett. 64, 2973 (1994)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
81.
1994

Wang X. Z.; Wessels B. W.

Thermal quenching properties of Er‐doped GaP
Appl. Phys. Lett. 64, 1537 (1994)
Department of Materials and Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
82.
1994

Dravid V. P.; Zhang H.; Wills L. A.; Wessels B. W.

On the microstructure, chemistry, and dielectric function of BaTiO3 MOCVD thin films
J. Mater. Res. 9, 426 (1994)
Department of Materials Science & Engineering, and Materials Research Center, Northwestern University, Evanston, IL 60208‐3018;
83.
1994

Wang X. Z.; Neuhalfen A. J.; Wessels B. W.

Photoconductive properties of the Er‐doped InP
Appl. Phys. Lett. 64, 466 (1994)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
84.
1993

Feil W. A.; Wessels B. W.

Defect structure of strontium titanate thin films
J. Appl. Phys. 74, 3927 (1993)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
85.
1993

Lu H. A.; Wills L. A.; Wessels B. W.; Lin W. P.; Wong G. K.

Electronic beam induced poling of BaTiO3 thin films
Appl. Phys. Lett. 63, 874 (1993)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
86.
1993

Qian L. Q.; Wessels B. W.

Strained‐layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 63, 628 (1993)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
87.
1993

Qian L. Q.; Wessels B. W.

Optical properties of strained‐layer In;xGa1-;xSb/GaSb heterostructures with x≤0.4
J. Vac. Sci. Technol. B 11, 1652 (1993)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
88.
1993

Chen J.; Lu H. A.; DiMeo F.; Wessels B. W.; Schulz D. L.; Marks T. J.; Schindler J. L.; Kannewurf C. R.

Solid phase epitaxy of Bi2Sr2CaCu2Ox superconducting thin films
J. Appl. Phys. 73, 4080 (1993)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
89.
1993

Lu H. A.; Chen J.; Wessels B. W.; Schulz D. L.; Marks T. J.

Weak links and critical current density in Bi2Sr2CaCu2Ox thin films
J. Appl. Phys. 73, 3886 (1993)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
90.
1993

Lu H. A.; Wills L. A.; Wessels B. W.; Lin W. P.; Zhang T. G.; Wong G. K.; Neumayer D. A.; Marks T. J.

Second‐harmonic generation of poled BaTiO;3 thin films
Appl. Phys. Lett. 62, 1314 (1993)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
91.
1992

Buyanova I. A.; Neuhalfen A. J.; Wessels B. W.

Symmetry properties of Er3+ related centers in In1-;xGaxP with low alloy compositions
Appl. Phys. Lett. 61, 2461 (1992)
Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
92.
1992

Storch D. R.; Schneider R. P.; Wessels B. W.

Temperature dependent photoluminescent properties of InAsxP1-;x/InP strained‐layer quantum wells
J. Appl. Phys. 72, 3041 (1992)
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208
93.
1992

Wessels B. W.; Qian L. Q.

Scanning tunneling optical spectroscopy of semiconductor thin films and quantum wells
J. Vac. Sci. Technol. B 10, 1803 (1992)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
94.
1992

Neuhalfen A. J.; Wessels B. W.

Thermal quenching of Er3+‐related luminescence in In;1-;xGaxP
Appl. Phys. Lett. 60, 2657 (1992)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
95.
1992

Zhang J. M.; DiMeo F.; Wessels B. W.; Schulz D. L.; Marks T. J.; Schindler J. L.; Kannewurf C. R.

A new route to high‐;Tc superconducting Bi–Sr–Ca–Cu–O thin films; Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas
J. Appl. Phys. 71, 2769 (1992)
Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois 60208‐3113;
96.
1992

Wills L. A.; Wessels B. W.; Richeson D. S.; Marks T. J.

Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition
Appl. Phys. Lett. 60, 41 (1992)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
97.
1992

Neuhalfen A. J.; Wessels B. W.

Electronic and photoluminescent properties of InP prepared by flow modulation epitaxy
J. Appl. Phys. 71, 281 (1992)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
98.
1991

Neuhalfen A. J.; Wessels B. W.

Photoluminescent properties of Er‐doped In;1-;xGaxP prepared by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 59, 2317 (1991)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
99.
1991

Schneider R. P.; Wessels B. W.

Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy
J. Appl. Phys. 70, 405 (1991)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
100.
1991

Qian L. Q.; Wessels B. W.

Scanning tunneling optical spectroscopy of semiconductor quantum well structures
Appl. Phys. Lett. 58, 2538 (1991)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
101.
1991

Qian L. Q.; Wessels B. W.

Scanning tunneling optical spectroscopy of semiconductors
Appl. Phys. Lett. 58, 1295 (1991)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
102.
1991

Wessels Bruce W.; Zhang Jiyue; DiMeo, Jr. Frank; Richeson D. S.; Marks Tobin J.; DeGroot D. C.; Kannewurf C. R.

Microstructure and superconducting properties of BiSrCaCuO thin films
Proc. SPIE Int. Soc. Opt. Eng. 1394, 232 (1991)
Northwestern Univ. (USA)
103.
1991

Zhang J. M.; Wessels B. W.; Richeson D. S.; Marks T. J.; DeGroot D. C.; Kannewurf C. R.

Preparation of high‐;Tc superconducting Bi‐Sr‐Ca‐Cu‐O films by organometallic chemical vapor deposition using second‐generation fluorocarbon‐based precursors
J. Appl. Phys. 69, 2743 (1991)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
104.
1990

Schneider R. P.; Wessels B. W.

InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
Appl. Phys. Lett. 57, 1998 (1990)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
105.
1990

Sun S. W.; Wessels B. W.

Compensation in Ge‐doped InP
J. Appl. Phys. 68, 606 (1990)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
106.
1990

Huang K.; Wessels B. W.

Deep‐level properties of Mn in InP
J. Appl. Phys. 67, 6882 (1990)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
107.
1990

Feil W. A.; Wessels B. W.; Tonge L. M.; Marks T. J.

Organometallic chemical vapor deposition of strontium titanate
J. Appl. Phys. 67, 3858 (1990)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
108.
1990

Zhang J. M.; Wessels B. W.; Tonge L. M.; Marks T. J.

Formation of oriented high Tc superconducting Bi‐Sr‐Ca‐Cu‐O thin films on silver substrates by organometallic chemical vapor deposition
Appl. Phys. Lett. 56, 976 (1990)
Northwestern University, Evanston, Illinois 60208
109.
1990

Williams D. M.; Wessels B. W.

Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor
Appl. Phys. Lett. 56, 566 (1990)
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
110.
1990

Thangaraj N.; Wessels B. W.

Electron‐beam‐enhanced oxidation processes in II‐VI compound semiconductors observed by high‐resolution electron microscopy
J. Appl. Phys. 67, 1535 (1990)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
111.
1989

Schneider R. P.; Li D. X.; Wessels B. W.

Structural and Optical Properties of Highly Strained InAsxP1-x;/;InP Heterostructures
J. Electrochem. Soc. 136, 3490 (1989)
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208
112.
1989

Zhang J. M.; Marcy H. O.; Tonge L. M.; Wessels B. W.; Marks T. J.; Kannewurf C. R.

Organometallic chemical vapor deposition of superconducting, high Tc Pb‐doped Bi‐Sr‐Ca‐Cu‐O thin films
Appl. Phys. Lett. 55, 1906 (1989)
Northwestern University, Evanston, Illinois 60208
113.
1989

Richeson Darrin S.; Tonge Lauren M.; Zhao Jing; Zhang Jiming; Marcy Henry O.; Marks Tobin J.; Wessels Bruce W.; Kannewurf Carl R.

Organometallic chemical vapor deposition routes to high Tc superconducting Tl‐Ba‐Ca‐Cu‐O films
Appl. Phys. Lett. 54, 2154 (1989)
Northwestern University, Evanston, Illinois 60208
114.
1989

Zhang Jiming; Marcy Henry O.; Tonge Lauren M.; Zhao Jing; Wessels Bruce W.; Marks Tobin J.; Kannewurf Carl R.

Organometallic chemical vapor deposition of high Tc superconducting Bi‐Sr‐Ca‐Cu‐O films
Appl. Phys. Lett. 54, 1166 (1989)
Northwestern University, Evanston, Illinois 60208
115.
1989

Schneider R. P.; Wessels B. W.

Monolayer abruptness in highly strained InAsxP1-;x/InP quantum well interfaces
Appl. Phys. Lett. 54, 1142 (1989)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
116.
1988

Huang K.; Wessels B. W.

Electronic and optical properties of deep levels in iron‐doped InAsP alloys
J. Appl. Phys. 64, 6770 (1988)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
117.
1988

Zhao Jing; Dahmen Klaus-Hermann; Marcy Henry O.; Tonge Lauren M.; Marks Tobin J.; Wessels Bruce W.; Kannewurf Carl R.

Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbon‐based precursor
Appl. Phys. Lett. 53, 1750 (1988)
Northwestern University, Evanston, Illinois 60208
118.
1988

Souletie P.; Wessels B. W.

Growth kinetics of ZnO prepared by organometallic chemical vapor deposition
J. Mater. Res. 3, 740 (1988)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
119.
1988

Byun Y.; Wessels B. W.

Surface photovoltage spectroscopy of surface states on indium phosphide
Appl. Phys. Lett. 52, 1352 (1988)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
120.
1988

Huang K.; Wessels B. W.

Characterization of Mn‐doped InAs;xP1-;x grown by organometallic vapor phase epitaxy
Appl. Phys. Lett. 52, 1155 (1988)
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208
121.
1988

Bethke S.; Pan H.; Wessels B. W.

Luminescence of heteroepitaxial zinc oxide
Appl. Phys. Lett. 52, 138 (1988)
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208
122.
1986

Huang K.; Wessels B. W.

Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxy
J. Appl. Phys. 60, 4342 (1986)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
123.
1986

Goodman C. E.; Wessels B. W.

Function of cobalt and platinum on p‐InP in the photoevolution of hydrogen from alkaline solutions
Appl. Phys. Lett. 49, 829 (1986)
Department of Materials Science & Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201;
124.
1986

Wang P. J.; Wessels B. W.

Vapor phase epitaxy of InP using flow modulation
Appl. Phys. Lett. 49, 564 (1986)
Department of Materials Science & Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201;
125.
1985

Sun S. W.; Wessels B. W.

Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia
J. Appl. Phys. 57, 4616 (1985)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
126.
1984

Goodman C. E.; Wessels B. W.; Ang P. G. P.

Photocapacitance spectroscopy of surface states on indium phosphide photoelectrodes
Appl. Phys. Lett. 45, 442 (1984)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
127.
1984

Wang P. J.; Wessels B. W.

Heteroepitaxial growth of high mobility InAsP from the vapor phase
Appl. Phys. Lett. 44, 766 (1984)
Department of Materials Science & Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201;
128.
1984

Leigh W. B.; Wessels B. W.

Nitrogen related defect centers in zinc selenide
J. Appl. Phys. 55, 1614 (1984)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
129.
1983

Christianson K. A.; Wessels B. W.

Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy
J. Appl. Phys. 54, 4205 (1983)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
130.
1982

Leigh Wallace; Wessels Bruce W.

High conductivity zinc sulfoselenide thin films
Appl. Phys. Lett. 41, 165 (1982)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
131.
1982

Besomi Paul; Wessels Bruce W.

Deep level defects in heteroepitaxial zinc selenide
J. Appl. Phys. 53, 3076 (1982)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
132.
1982

Leigh W. B.; Besomi P.; Wessels B. W.

Electron mobility and carrier concentration of heteroepitaxial zinc selenide
J. Appl. Phys. 53, 532 (1982)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
133.
1980

Inuishi Masahide; Wessels Bruce W.

The Chemical Vapor Deposition of Polycrystalline InP
J. Electrochem. Soc. 127, 2747 (1980)
Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
134.
1980

Besomi Paul; Wessels Bruce W.

High‐conductivity heteroepitaxial ZnSe films
Appl. Phys. Lett. 37, 955 (1980)
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
135.
1980

Besomi Paul; Wessels Bruce

Deep level defects in polycrystalline cadmium sulfide
J. Appl. Phys. 51, 4305 (1980)
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois, 60201

Co-authors

Co-publications
19

Marks, Tobin J.
7

Chiu, PT
7

May, SJ
6

Yi, Gyu Chul
5

Ulmer, Melville P.
5

Sterbinsky, GE
5

Shahedipour, F
5

Hoerman, BH
4

Blattner, AJ
4

Korotkov, Roman Y.
4

Meier, AL
4

Wong, George K.
4

Nichols, BM
3

Niu, F
3

Liu, Zhifu