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III-V semiconductors
Chemical vapor deposition
Vapor phase epitaxy; growth f...
Dielectric thin films
Magnetic semiconductors
Thin film structure and morph...
Niobates, titanates, tantalat...
Amorphous semiconductors; gla...
Other inorganic semiconductors
Elemental semiconductors
II-VI semiconductors
Magnetic properties of monola...
III-V and II-VI semiconductors
Nonmetallic ferromagnetic mat...
Semiconductors
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1.
Bhowmick Mithun; Merritt Travis; Khodaparast Giti A.; Feeser Caitlin; Wessels Bruce W.; McGill Stephen; Saha D.; Pan X.; Sanders G. D.; Stanton C. J.
Time Resolved Spectroscopy of MOVPE Grown Narrow Gap Ferromagnetic Semiconductors
2.
Peters J. A.; Rangaraju N.; Feeser C.; Wessels B. W.
Spin-dependent magnetotransport in a p-InMnSb/n-InSb magnetic semiconductor heterojunction
3.
Peters J. A.; Parashar N. D.; Rangaraju N.; Wessels B. W.
Magnetotransport properties of InMnSb magnetic semiconductor thin films
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4.
Rangaraju N.; Peters J. A.; Wessels B. W.
Magnetoamplification in a Bipolar Magnetic Junction Transistor
5.
Li Jianheng; Liu Zhifu; Wessels B. W.
Study of domain reversal and its field-dependence in epitaxial BaTiO3 thin films
6.
Wells Daniel M.; Cheng J.; Ellis Donald E.; Wessels B. W.
Local electronic and magnetic structure of mixed ferrite multilayer materials
7.
Thompson S. M.; Lazarov V. K.; Bradley R. C.; Deakin T.; Kaeswurm B.; Sterbinsky G. E.; Cheng J.; Wessels B. W.
Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films
8.
Parashar N. D.; Rangaraju N.; Lazarov V. K.; Xie S.; Wessels B. W.
High-temperature ferromagnetism in epitaxial (In,Mn)Sb films
9.
Sterbinsky G. E.; Wessels B. W.; Kim J.-W.; Karapetrova E.; Ryan P. J.; Keavney D. J.
Strain-driven spin reorientation in magnetite/barium titanate heterostructures
10.
Li Jianheng; Lin Pao Tai; Wessels B. W.
Polarization reversal and backswitching dynamics in epitaxial BaTiO3 thin films
11.
Cheng J.; Lazarov V. K.; Sterbinsky G. E.; Wessels B. W.
Synthesis, structural and magnetic properties of epitaxial MgFe2O4 thin films by molecular beam epitaxy
12.
Xie S.; Cheng J.; Wessels B. W.; Dravid V. P.
Interfacial structure and chemistry of epitaxial CoFe2O4 thin films on SrTiO3 and MgO substrates
13.
Liu Zhifu; Meier A. L.; Wessels B. W.
Dynamic response of polydomain ferroelectric barium titanate epitaxial thin films and its field dependence
14.
Rangaraju N.; Wessels B. W.
Magnetocapacitance effect in InMnAs/;InAsp-n heterojunctions
15.
Lin Pao Tai; Wessels B. W.; Jang Joon I.; Ketterson J. B.
Highly efficient broadband second harmonic generation using polydomain epitaxial barium titanate thin film waveguides
16.
Chiu P. T.; Wessels B. W.
Dependence of magnetic circular dichroism on doping and temperature in In1-x;MnxAs epitaxial films
17.
Zheng J. G.; Sterbinsky G. E.; Cheng J.; Wessels B. W.
Epitaxial Fe3O4 on SrTiO3 characterized by transmission electron microscopy
18.
Sterbinsky G. E.; Cheng J.; Chiu P. T.; Wessels B. W.; Keavney D. J.
Investigation of heteroepitaxial growth of magnetite thin films
19.
Liu Zhifu; Lin Pao-Tai; Wessels Bruce W.; Yi Fei; Ho Seng-Tiong
Nonlinear photonic crystal waveguide structures based on barium titanate thin films and their optical properties
20.
Niu F.; Wessels B. W.
Epitaxial growth and strain relaxation of BaTiO3 thin films on SrTiO3 buffered (001) Si by molecular beam epitaxy
21.
Niu F.; Meier A. L.; Wessels B. W.
Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy
22.
Evidence of room temperature sp-d exchange in InMnAs epitaxial films
23.
May S. J.; Phillips P. J.; Wessels B. W.
Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions
24.
Han B.; Wessels B. W.; Ulmer M. P.
Investigation of nanoscale composition fluctuations in InGaN using optical transmission spectroscopy and near-field scanning optical microscopy
25.
Chiu P. T.; May S. J.; Wessels B. W.
Origin of uniaxial magnetic anisotropy in epitaxial InMnAs thin films
26.
May S. J.; Wessels B. W.
High-field magnetoresistance in p-(In,Mn)As/n-;InAs heterojunctions
27.
Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy
28.
Electronic and magnetotransport properties of ferromagnetic p-(In,Mn)As/;n-InAs heterojunctions
29.
Dhote A. M.; Meier A. L.; Towner D. J.; Wessels B. W.; Ni J.; Marks T. J.
Low temperature deposition of epitaxial BaTiO3 films in a rotating disk vertical MOCVD reactor
30.
Chiu P. T.; May S. J.; Blattner A. J.; Wessels B. W.
Magnetic Anisotropy In Epitaxial InMnAs
31.
Chiu P. T.; Wessels B. W.; Keavney D. J.; Freeland J. W.
Local environment of ferromagnetically ordered Mn in epitaxial InMnAs
32.
Optical investigation of electronic states of Mn4+ ions in p-type GaN
33.
Tang Pingsheng; Towner D. J.; Meier A. L.; Wessels B. W.
Low-voltage, polarization-insensitive, electro-optic modulator based on a polydomain barium titanate thin film
34.
May S. J.; Blattner A. J.; Wessels B. W.
Negative magnetoresistance in (In,Mn)As semiconductors
35.
Room-temperature magneto-optical activity of InMnAs thin films
36.
Han B.; Korotkov R. Y.; Wessels B. W.; Ulmer M. P.
Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors
37.
Soo Y. L.; Kim S.; Kao Y. H.; Blattner A. J.; Wessels B. W.; Khalid S.; Sanchez Hanke C.; Kao C.-C.
Local structure around Mn atoms in room-temperature ferromagnetic (In,Mn)As thin films probed by extended x-ray absorption fine structure
38.
Hamano T.; Towner D. J.; Wessels B. W.
Relative dielectric constant of epitaxial BaTiO3 thin films in the GHz frequency range
39.
Han B.; Gregie J. M.; Wessels B. W.
Blue emission band in compensated GaN:Mg codoped with Si
40.
Ahn K.; Wessels B. W.; Sampath S.
Dielectric properties of plasma‐spray‐deposited BaTiO;3 and Ba0.68Sr0.32TiO3 thick films
41.
Nichols B. M.; Hoerman B. H.; Hwang J.-H.; Mason T. O.; Wessels B. W.
Phase stability of epitaxial KTaxNb1-;xO3 thin films deposited by metalorganic chemical vapor deposition
42.
Blattner A. J.; Wessels B. W.
Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy
43.
Hoerman B. H.; Nichols B. M.; Wessels B. W.
Dynamic response of the dielectric and electro-optic properties of epitaxial ferroelectric thin films
44.
Vlasenko L. S.; Bozdog C.; Watkins G. D.; Shahedipour F.; Wessels B. W.
Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN
45.
Zolotoyabko E.; Quintana J. P.; Hoerman B. H.; Wessels B. W.
Fast time-resolved x-ray diffraction in BaTiO3 films subjected to a strong high-frequency electric field
46.
Korotkov R. Y.; Gregie J. M.; Wessels B. W.
Optical properties of the deep Mn acceptor in GaN:Mn
47.
Chattopadhyay Soma; Teren A. R.; Hwang Jin-Ha; Mason T. O.; Wessels B. W.
Diffuse phase transition in epitaxial BaTiO3 thin films
48.
Chattopadhyay Soma; Nichols B. M.; Hwang Jin-Ha; Mason T. O.; Wessels B. W.
Dielectric properties of epitaxial KNbO3 ferroelectric thin films
49.
Electrical properties of p-type GaN:Mg codoped with oxygen
50.
Guha S.; Keller R. C.; Yang V.; Shahedipour F.; Wessels B. W.
Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing
51.
Ves S.; Venkateswaran U. D.; Loa I.; Syassen K.; Shahedipour F.; Wessels B. W.
Pressure dependence of the blue luminescence in Mg-doped GaN
52.
Niu F.; Hoerman B. H.; Wessels B. W.
Epitaxial thin films of MgO on Si using metalorganic molecular beam epitaxy
53.
Shahedipour F.; Wessels B. W.
Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
54.
Reshchikov M. A.; Shahedipour F.; Korotkov R. Y.; Wessels B. W.; Ulmer M. P.
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
55.
Hoerman B. H.; Nichols B. M.; Nystrom M. J.; Wessels B. W.
Dynamic response of the electro-optic effect in epitaxial KNbO3
56.
Reshchikov M. A.; Yi G.-C.; Wessels B. W.
Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
57.
Hoerman B. H.; Ford G. M.; Kaufmann L. D.; Wessels B. W.
Dielectric properties of epitaxial BaTiO3 thin films
58.
Yi G.-C.; Block B. A.; Ford G. M.; Wessels B. W.
Luminescence quenching in Er-doped BaTiO3 thin films
59.
Theiring Scott C.; Pillai Manoj R.; Barnett Scott A.; Wessels Bruce W.
Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures
60.
Yi Gyu-Chul; Block Bruce A.; Wessels Bruce W.
Hydrogen complexes in epitaxial BaTiO3 thin films
61.
Wessels B. W.
Morphological stability of strained-layer semiconductors
62.
Yi Gyu-Chul; Wessels Bruce W.
Carbon–hydrogen complexes in vapor phase epitaxial GaN
63.
Compensation of n‐type GaN
64.
Gill D. M.; Block B. A.; Conrad C. W.; Wessels B. W.; Ho S. T.
Thin film channel waveguides fabricated in metalorganic chemical vapor deposition grown BaTiO3 on MgO
65.
Chang K.-W.; Wessels B. W.; Studebaker D.; Marks T. J.
Epitaxial growth of (Sr1-;xCax)CuO2 thin film with the infinite‐layer structure by metal‐organic chemical vapor deposition
66.
Gilbert S. R.; Thomas J. A.; Schindler J. L.; Wessels B. W.; Wills L. A.; Kannewurf C. R.
Electrical transport properties of epitaxial BaTiO3 thin films
67.
Deep level defects in n‐type GaN compensated with Mg
68.
Ford G. M.; Wessels B. W.
Electroluminescence from forward‐biased Er‐doped GaP ;p‐;n junctions at room temperature
69.
Nystrom M. J.; Wessels B. W.; Chen J.; Marks T. J.
Microstructure of epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition
70.
Wang X. Z.; Wessels B. W.
Photoluminescent properties of Er‐doped GaP deposited on Si
71.
Nystrom M. J.; Wessels B. W.; Studebaker D. B.; Marks T. J.; Lin W. P.; Wong G. K.
Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition
72.
Gilbert S. R.; Wessels B. W.; Studebaker D. B.; Marks T. J.
Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition
73.
Chu D. Y.; Ho S. T.; Wang X. Z.; Wessels B. W.; Bi W. G.; Tu C. W.; Espindola R. P.; Wu S. L.
Observation of enhanced photoluminescence in erbium‐doped semiconductor microdisk resonator
74.
Wessels Bruce W.
Ferroelectric oxide thin films for photonic applications
75.
Nystrom M. J.; Wessels B. W.; Lin W. P.; Wong G. K.; Neumayer D. A.; Marks T. J.
Nonlinear optical properties of textured strontium barium niobate thin films prepared by metalorganic chemical vapor deposition
76.
Effect of free carriers on the luminescence efficiency of InP:Er
77.
Electroluminescence from Er‐doped GaP
78.
Buyanova I. A.; Neuhalfen A. J.; Wessels B. W.; Sheinkman M. K.
Symmetry of optically active Yb‐related centers in InP and In;1-;xGaxP (x≤0.13)
79.
Block B. A.; Wessels B. W.
Photoluminescence properties of Er3+‐doped BaTiO;3 thin films
80.
Lu H. A.; Wills L. A.; Wessels B. W.
Electrical properties and poling of BaTiO3 thin films
81.
Thermal quenching properties of Er‐doped GaP
82.
Dravid V. P.; Zhang H.; Wills L. A.; Wessels B. W.
On the microstructure, chemistry, and dielectric function of BaTiO3 MOCVD thin films
83.
Wang X. Z.; Neuhalfen A. J.; Wessels B. W.
Photoconductive properties of the Er‐doped InP
84.
Feil W. A.; Wessels B. W.
Defect structure of strontium titanate thin films
85.
Lu H. A.; Wills L. A.; Wessels B. W.; Lin W. P.; Wong G. K.
Electronic beam induced poling of BaTiO3 thin films
86.
Qian L. Q.; Wessels B. W.
Strained‐layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy
87.
Optical properties of strained‐layer In;xGa1-;xSb/GaSb heterostructures with x≤0.4
88.
Chen J.; Lu H. A.; DiMeo F.; Wessels B. W.; Schulz D. L.; Marks T. J.; Schindler J. L.; Kannewurf C. R.
Solid phase epitaxy of Bi2Sr2CaCu2Ox superconducting thin films
89.
Lu H. A.; Chen J.; Wessels B. W.; Schulz D. L.; Marks T. J.
Weak links and critical current density in Bi2Sr2CaCu2Ox thin films
90.
Lu H. A.; Wills L. A.; Wessels B. W.; Lin W. P.; Zhang T. G.; Wong G. K.; Neumayer D. A.; Marks T. J.
Second‐harmonic generation of poled BaTiO;3 thin films
91.
Buyanova I. A.; Neuhalfen A. J.; Wessels B. W.
Symmetry properties of Er3+ related centers in In1-;xGaxP with low alloy compositions
92.
Storch D. R.; Schneider R. P.; Wessels B. W.
Temperature dependent photoluminescent properties of InAsxP1-;x/InP strained‐layer quantum wells
93.
Wessels B. W.; Qian L. Q.
Scanning tunneling optical spectroscopy of semiconductor thin films and quantum wells
94.
Neuhalfen A. J.; Wessels B. W.
Thermal quenching of Er3+‐related luminescence in In;1-;xGaxP
95.
Zhang J. M.; DiMeo F.; Wessels B. W.; Schulz D. L.; Marks T. J.; Schindler J. L.; Kannewurf C. R.
A new route to high‐;Tc superconducting Bi–Sr–Ca–Cu–O thin films; Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas
96.
Wills L. A.; Wessels B. W.; Richeson D. S.; Marks T. J.
Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition
97.
Electronic and photoluminescent properties of InP prepared by flow modulation epitaxy
98.
Photoluminescent properties of Er‐doped In;1-;xGaxP prepared by metalorganic vapor phase epitaxy
99.
Schneider R. P.; Wessels B. W.
Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy
100.
Scanning tunneling optical spectroscopy of semiconductor quantum well structures
101.
Scanning tunneling optical spectroscopy of semiconductors
102.
Wessels Bruce W.; Zhang Jiyue; DiMeo, Jr. Frank; Richeson D. S.; Marks Tobin J.; DeGroot D. C.; Kannewurf C. R.
Microstructure and superconducting properties of BiSrCaCuO thin films
103.
Zhang J. M.; Wessels B. W.; Richeson D. S.; Marks T. J.; DeGroot D. C.; Kannewurf C. R.
Preparation of high‐;Tc superconducting Bi‐Sr‐Ca‐Cu‐O films by organometallic chemical vapor deposition using second‐generation fluorocarbon‐based precursors
104.
InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
105.
Sun S. W.; Wessels B. W.
Compensation in Ge‐doped InP
106.
Huang K.; Wessels B. W.
Deep‐level properties of Mn in InP
107.
Feil W. A.; Wessels B. W.; Tonge L. M.; Marks T. J.
Organometallic chemical vapor deposition of strontium titanate
108.
Zhang J. M.; Wessels B. W.; Tonge L. M.; Marks T. J.
Formation of oriented high Tc superconducting Bi‐Sr‐Ca‐Cu‐O thin films on silver substrates by organometallic chemical vapor deposition
109.
Williams D. M.; Wessels B. W.
Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor
110.
Thangaraj N.; Wessels B. W.
Electron‐beam‐enhanced oxidation processes in II‐VI compound semiconductors observed by high‐resolution electron microscopy
111.
Schneider R. P.; Li D. X.; Wessels B. W.
Structural and Optical Properties of Highly Strained InAsxP1-x;/;InP Heterostructures
112.
Zhang J. M.; Marcy H. O.; Tonge L. M.; Wessels B. W.; Marks T. J.; Kannewurf C. R.
Organometallic chemical vapor deposition of superconducting, high Tc Pb‐doped Bi‐Sr‐Ca‐Cu‐O thin films
113.
Richeson Darrin S.; Tonge Lauren M.; Zhao Jing; Zhang Jiming; Marcy Henry O.; Marks Tobin J.; Wessels Bruce W.; Kannewurf Carl R.
Organometallic chemical vapor deposition routes to high Tc superconducting Tl‐Ba‐Ca‐Cu‐O films
114.
Zhang Jiming; Marcy Henry O.; Tonge Lauren M.; Zhao Jing; Wessels Bruce W.; Marks Tobin J.; Kannewurf Carl R.
Organometallic chemical vapor deposition of high Tc superconducting Bi‐Sr‐Ca‐Cu‐O films
115.
Monolayer abruptness in highly strained InAsxP1-;x/InP quantum well interfaces
116.
Electronic and optical properties of deep levels in iron‐doped InAsP alloys
117.
Zhao Jing; Dahmen Klaus-Hermann; Marcy Henry O.; Tonge Lauren M.; Marks Tobin J.; Wessels Bruce W.; Kannewurf Carl R.
Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbon‐based precursor
118.
Souletie P.; Wessels B. W.
Growth kinetics of ZnO prepared by organometallic chemical vapor deposition
119.
Byun Y.; Wessels B. W.
Surface photovoltage spectroscopy of surface states on indium phosphide
120.
Characterization of Mn‐doped InAs;xP1-;x grown by organometallic vapor phase epitaxy
121.
Bethke S.; Pan H.; Wessels B. W.
Luminescence of heteroepitaxial zinc oxide
122.
Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxy
123.
Goodman C. E.; Wessels B. W.
Function of cobalt and platinum on p‐InP in the photoevolution of hydrogen from alkaline solutions
124.
Wang P. J.; Wessels B. W.
Vapor phase epitaxy of InP using flow modulation
125.
Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia
126.
Goodman C. E.; Wessels B. W.; Ang P. G. P.
Photocapacitance spectroscopy of surface states on indium phosphide photoelectrodes
127.
Heteroepitaxial growth of high mobility InAsP from the vapor phase
128.
Leigh W. B.; Wessels B. W.
Nitrogen related defect centers in zinc selenide
129.
Christianson K. A.; Wessels B. W.
Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy
130.
Leigh Wallace; Wessels Bruce W.
High conductivity zinc sulfoselenide thin films
131.
Besomi Paul; Wessels Bruce W.
Deep level defects in heteroepitaxial zinc selenide
132.
Leigh W. B.; Besomi P.; Wessels B. W.
Electron mobility and carrier concentration of heteroepitaxial zinc selenide
133.
Inuishi Masahide; Wessels Bruce W.
The Chemical Vapor Deposition of Polycrystalline InP
134.
High‐conductivity heteroepitaxial ZnSe films
135.
Besomi Paul; Wessels Bruce
Deep level defects in polycrystalline cadmium sulfide
19
Marks, Tobin J.
7
Chiu, PT
May, SJ
6
Yi, Gyu Chul
5
Ulmer, Melville P.
Sterbinsky, GE
Shahedipour, F
Hoerman, BH
4
Blattner, AJ
Korotkov, Roman Y.
Meier, AL
Wong, George K.
Nichols, BM
3
Niu, F
Liu, Zhifu