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Weaver, JH

Computed

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Research Profile

Latest Publications

1.
2000

Nakayama Koji S.; Sakurai T.; Weaver J. H.

Electrochemical fluorine source for ultrahigh vacuum dosing
J. Vac. Sci. Technol. A 18, 2606 (2000)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
2.
1999

Han B. Y.; Nakayama Koji; Weaver J. H.

Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111)
Phys. Rev. B 60, 13846 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
3.
1999

Nakayama Koji S.; Weaver J. H.

Si(100) ;-(2 × 1) ; Etching with Fluorine; Planar Removal versus Three Dimensional Pitting
Phys. Rev. Lett. 83, 3210 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455

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All Publications

1.
2000

Nakayama Koji S.; Sakurai T.; Weaver J. H.

Electrochemical fluorine source for ultrahigh vacuum dosing
J. Vac. Sci. Technol. A 18, 2606 (2000)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
2.
1999

Han B. Y.; Nakayama Koji; Weaver J. H.

Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111)
Phys. Rev. B 60, 13846 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
3.
1999

Nakayama Koji S.; Weaver J. H.

Si(100) ;-(2 × 1) ; Etching with Fluorine; Planar Removal versus Three Dimensional Pitting
Phys. Rev. Lett. 83, 3210 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
4.
1999

Chey S. Jay; Huang L.; Weaver J. H.

Interface bonding and manipulation of Ag and Cu nanocrystals on Si(111)-(7×7)-based; surfaces
Phys. Rev. B 59, 16033 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
5.
1999

Nakayama Koji; Aldao C. M.; Weaver J. H.

Halogen etching of Si(100)-2×1; Dependence on surface concentration
Phys. Rev. B 59, 15893 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
6.
1999

Nakayama Koji; Weaver J. H.

Electron-Stimulated Modification of Si Surfaces
Phys. Rev. Lett. 82, 980 (1999)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
7.
1998

Iguain J. L.; Mártin H. O.; Aldao C. M.; Gong Y.; Chey S. J.; Weaver J. H.

Dimer chain patterns during submonolayer growth of silicon on Si(100)
J. Vac. Sci. Technol. A 16, 3460 (1998)
Physics Department, School of Exact and Natural Sciences, Universidad Nacional de Mar del Plata, 7600 Mar del Plata, Argentina;
8.
1998

Han B. Y.; Weaver J. H.

Laser interaction with Br-GaAs(110): Etching and atomic desorption
Phys. Rev. B 58, 10981 (1998)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
9.
1998

Boland John J.; Weaver John H.

A Surface View of Etching
Phys. Today 51, 34 (1998)
University of North Carolina, Chapel Hill
10.
1998

Chey S. Jay; Huang Lin; Weaver J. H.

Manipulation and writing with Ag nanocrystals on Si(111)-7×7
Appl. Phys. Lett. 72, 2698 (1998)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
11.
1998

Huang Lin; Chey S. Jay; Weaver J. H.

Buffer-Layer-Assisted Growth of Nanocrystals: Ag-Xe-Si(111)
Phys. Rev. Lett. 80, 4095 (1998)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
12.
1998

Han B. Y.; Cha C. Y.; Weaver J. H.

Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation
J. Vac. Sci. Technol. A 16, 490 (1998)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455;
13.
1997

Han B. Y.; Cha C. Y.; Weaver J. H.

Etch pit development and growth on GaAs(110)
Phys. Rev. B 56, 4966 (1997)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
14.
1997

Williams F. J.; Aldao C. M.; Gong Y.; Weaver J. H.

Why Si(100) steps are rougher after etching
Phys. Rev. B 55, 13829 (1997)
Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata-CONICET, Juan B. Justo 4302, 7600 Mar del Plata, Argentina
15.
1997

Symon Keith R.; Huber David L.; Trzeciak Walter S.; Mills Frederick E.; Weaver John H.

Ednor Marsh Rowe
Phys. Today 50, 78 (1997)
16.
1997

Brake J.; Cha C. Y.; Owens D. W.; Han B. Y.; Weaver J. H.

Coverage-dependent etching pathways for Br–GaAs(110)
J. Vac. Sci. Technol. B 15, 670 (1997)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
17.
1997

Cha C. Y.; Brake J.; Han B. Y.; Owens D. W.; Weaver J. H.

Surface morphologies associated with thermal desorption: Scanning tunneling microscopy studies of Br–GaAs(110)
J. Vac. Sci. Technol. B 15, 605 (1997)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
18.
1997

Aldao Celso M.; Weaver John H.

Scanning Tunneling Microscopy Observations and Analysis of Thermal Etching of Si(100) with Br and Cl
Jpn. J. Appl. Phys., Part 1 36, 2456 (1997)
Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata-CONICET, Juan B. Justo 4302, 7600 Mar del Plata, Argentina
19.
1996

Cha C. Y.; Weaver J. H.

Layer‐by‐layer removal of GaAs(110) by bromine
J. Vac. Sci. Technol. B 14, 3559 (1996)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
20.
1996

Williams F. J.; Aldao C. M.; Weaver J. H.

Surface morphologies for Br‐etched Si(100)‐2×1; Kinetics of pit growth and step retreat
J. Vac. Sci. Technol. B 14, 2519 (1996)
Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata‐CONICET, Juan B. Justo 4302, 7600 Mar del Plata, Argentina;
21.
1996

Gong Y.; Owens D. W.; Weaver J. H.

Etching of double‐height‐stepped Si(100)‐2×1; Steps and their interactions
Phys. Rev. B 53, R16144 (1996)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
22.
1996

Brake J.; Wang X.-S.; Pechman R. J.; Weaver J. H.

Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110)
Phys. Rev. B 53, 11170 (1996)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
23.
1996

Wang X.-S.; Brake J.; Pechman R. J.; Weaver J. H.

Effect of ion sputtering on Ge epitaxy on GaAs(110)
Appl. Phys. Lett. 68, 1660 (1996)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
24.
1995

Sánchez J. R.; Aldao C. M.; Weaver J. H.

Analysis and Monte Carlo simulations of spontaneous etching: Cl–Si(100)‐2×1
J. Vac. Sci. Technol. B 13, 2230 (1995)
Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata—CONICET, Juan B. Justo 4302, 7600 Mar del Plata, Argentina;
25.
1995

Poirier D. M.; Olson C. G.; Weaver J. H.

Electronic states and stability of the insulating RbC60 dimer phase
Phys. Rev. B 52, 11662 (1995)
Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
26.
1995

Pechman R. J.; Wang X.-S.; Weaver J. H.

Interactions of Br with Si(111)‐7×7; Chemisorption, step retreat, and terrace etching
Phys. Rev. B 52, 11412 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
27.
1995

Chander M.; Goetsch D. A.; Aldao C. M.; Weaver J. H.

Etching of Si(100)‐2×1 with chlorine; Reaction pathways, energy anisotropies, and atomic‐scale phenomena
Phys. Rev. B 52, 8288 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
28.
1995

Wang X.-S.; Pechman R. J.; Weaver J. H.

Ion sputtering of GaAs(110): From individual bombardment events to multilayer removal
J. Vac. Sci. Technol. B 13, 2031 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
29.
1995

Owens D. W.; Aldao C. M.; Poirier D. M.; Weaver J. H.

Charge transfer, doping, and interface morphologies for Al‐C;60
Phys. Rev. B 51, 17068 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
30.
1995

Rioux D.; Stepniak F.; Pechman R. J.; Weaver J. H.

Chemisorption and thermally activated etching of Si(100)‐2×1 by iodine
Phys. Rev. B 51, 10981 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
31.
1995

Pechman R. J.; Wang X.-S.; Weaver J. H.

Vacancy kinetics and sputtering of GaAs(110)
Phys. Rev. B 51, 10929 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
32.
1995

Chander M.; Goetsch D. A.; Aldao C. M.; Weaver J. H.

Determination of dynamic parameters controlling atomic scale etching of Si(100)‐(2×1) by chlorine
Phys. Rev. Lett. 74, 2014 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
33.
1995

Poirier D. M.; Owens D. W.; Weaver J. H.

Alkali‐metal‐fulleride phase equilibria
Phys. Rev. B 51, 1830 (1995)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
34.
1994

Wang X.-S.; Pechman R. J.; Weaver J. H.

Interaction of 300–5000 eV ions with GaAs(110)
Appl. Phys. Lett. 65, 2818 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
35.
1994

Benning P. J.; Olson C. G.; Lynch D. W.; Weaver J. H.

Band dispersion in C60(111): An angle‐resolved photoemission study
Phys. Rev. B 50, 11239 (1994)
Ames Laboratory and Iowa State University, Ames, Iowa 50011
36.
1994

Stepniak F.; Weaver J. H.

Effects of Cl incorporation during Si oxidation
J. Vac. Sci. Technol. B 12, 3031 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
37.
1994

Rioux D.; Pechman R. J.; Chander M.; Weaver J. H.

Temperature‐dependent surface morphologies for Br‐etched Si(100)‐2×1
Phys. Rev. B 50, 4430 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
38.
1994

Stepniak F.; Rioux D.; Weaver J. H.

Prelude to etching: The surface interaction of chlorine on GaAs(110)
Phys. Rev. B 50, 1929 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
39.
1994

Laaksonen R. T.; Goetsch D. A.; Owens D. W.; Poirier D. M.; Stepniak F.; Weaver J. H.

Supersonic cluster source with mass selection and energy control
Rev. Sci. Instrum. 65, 2267 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
40.
1994

Poirier D. M.; Kikuchi K.; Bethune D. S.; Parrinello M.; Laasonen K.; Andreoni W.; Weaver J. H.; Knupfer M.; Achiba Y.

Electronic and geometric structure of La@xaC82 and C82: Theory and experiment
Phys. Rev. B 49, 17403 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
41.
1994

Rioux D.; Li Y. Z.; Chander M.; Weaver J. H.

Bromine interaction with Si(100)‐2×1; Chemisorption and initial stages of etching
Phys. Rev. B 49, 11071 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
42.
1994

Knupfer M.; Poirier D. M.; Weaver J. H.

K‐C;70; Stable phases and electronic structures
Phys. Rev. B 49, 8464 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
43.
1994

Knupfer M.; Stepniak F.; Weaver J. H.

Electronic states of the Ba‐C;60 compounds
Phys. Rev. B 49, 7620 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
44.
1994

Zhao Y. B.; Poirier D. M.; Pechman R. J.; Weaver J. H.

Electron stimulated polymerization of solid C60
Appl. Phys. Lett. 64, 577 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
45.
1994

Knupfer M.; Poirier D. M.; Weaver J. H.

Electron correlation and phase‐dependent electronic structure of C;70
Phys. Rev. B 49, 2281 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
46.
1994

Luo Y. S.; Yang Y.-N.; Weaver J. H.; Florez L. T.; Palmstrøm C. J.

Multiorientational growth of Al on GaAs(001) studied with scanning tunneling microscopy
Phys. Rev. B 49, 1893 (1994)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
47.
1993

Chander M.; Li Y. Z.; Rioux D.; Weaver J. H.

Pattern of Si(100): Spontaneous etching with Br2
Phys. Rev. Lett. 71, 4154 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
48.
1993

Patrin J. C.; Weaver J. H.

Br2 and Cl2 adsorption and etching of GaAs(110) studied by use of scanning tunneling microscopy
Phys. Rev. B 48, 17913 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
49.
1993

Benning P. J.; Stepniak F.; Weaver J. H.

Electron‐diffraction and photoelectron‐spectroscopy studies of fullerene and alkali‐metal fulleride films
Phys. Rev. B 48, 9086 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
50.
1993

Chander M.; Patrin J. C.; Li Y. Z.; Weaver J. H.

Si(100)‐(2×1) surface defects and dissociative and nondissociative adsorption of H;2O studied with scanning tunneling microscopy
Phys. Rev. B 48, 2493 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
51.
1993

Stepniak F.; Benning P. J.; Poirier D. M.; Weaver J. H.

Electrical transport in Na, K, Rb, and Cs fullerides: Phase formation, microstructure, and metallicity
Phys. Rev. B 48, 1899 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
52.
1993

Patrin J. C.; Li Y. Z.; Chander M.; Weaver J. H.

Bi thin film growth structures prepared at 30 K on GaAs(110) and InP(110)
J. Vac. Sci. Technol. A 11, 2073 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
53.
1993

Ohno T. R.; Gu C.; Weaver J. H.; Chibante L. P. F.; Smalley R. E.

Electronic properties of hydrogen‐bonded fullerenes and potassium fullerides
Phys. Rev. B 47, 13848 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
54.
1993

Benning P. J.; Chibante L. P. F.; Weaver J. H.; Martins J. L.; Poirier D. M.; Stepniak F.; Smalley R. E.

Electronic properties of K‐doped C;60(111); Photoemission and electron correlation
Phys. Rev. B 47, 13843 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
55.
1993

Chander M.; Li Y. Z.; Patrin J. C.; Weaver J. H.

Layer‐by‐layer etching of Si(100)‐2×1 with Br;2; A scanning‐tunneling‐microscopy study
Phys. Rev. B 47, 13035 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
56.
1993

Poirier D. M.; Weaver J. H.

KC60 fulleride phase formation: An x‐ray photoemission study
Phys. Rev. B 47, 10959 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
57.
1993

Li Y. Z.; Patrin J. C.; Chander M.; Weaver J. H.; Kikuchi Koichi; Achiba Yohji

Overlayer growth and molecular structures of C84 and other large fullerenes: A scanning‐tunneling‐microscopy study
Phys. Rev. B 47, 10867 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
58.
1993

Poirier D. M.; Ohno T. R.; Kroll G. H.; Benning P. J.; Stepniak F.; Weaver J. H.; Chibante L. P. F.; Smalley R. E.

X‐ray photoemission investigations of binary and ternary C;60 fullerides of Na, K, Rb, and Cs
Phys. Rev. B 47, 9870 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
59.
1993

Patrin J. C.; Li Y. Z.; Chander M.; Weaver J. H.

Atomic layer etching of GaAs(110) with Br2 studied by scanning tunneling microscopy
Appl. Phys. Lett. 62, 1277 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
60.
1993

Ohno T. R.; Chen Y.; Harvey S. E.; Kroll G. H.; Benning P. J.; Weaver J. H.; Chibante L. P. F.; Smalley R. E.

Metal‐overlayer formation on C;60 for Ti, Cr, Au, La, and In; Dependence on metal‐C;60 bonding
Phys. Rev. B 47, 2389 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
61.
1993

Benning P. J.; Ohno T. R.; Weaver J. H.; Mukherjee P.; Adcock J. L.; Compton R. N.; Dunlap B. I.

Electronic structure of highly fluorinated C60
Phys. Rev. B 47, 1589 (1993)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
62.
1992

Yang Y.-N.; Luo Y. S.; Weaver J. H.

Scanning‐tunneling‐microscopy study of Ge/GaAs(110). II. Coalescence and layer‐by‐layer growth
Phys. Rev. B 46, 15395 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
63.
1992

Yang Y.-N.; Luo Y. S.; Weaver J. H.

Scanning‐tunneling‐microscopy study of Ge/GaAs(110). I. Initial nucleation and growth
Phys. Rev. B 46, 15387 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
64.
1992

Li Y. Z.; Patrin J. C.; Chander M.; Weaver J. H.; Chibante L. P. F.; Smalley R. E.

Real‐space imaging of Ca;xC60 using scanning tunneling microscopy
Phys. Rev. B 46, 12914 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
65.
1992

Yang Y.-N.; Luo Y. S.; Weaver J. H.; Florez L. T.; Palmstrøm C. J.

Effects of annealing on the surface morphology of decapped GaAs(001)
Appl. Phys. Lett. 61, 1930 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
66.
1992

Ohno T. R.; Chibante L. P. F.; Weaver J. H.; Kroll G. H.; Smalley R. E.

Yb and Yb‐K fulleride formation, bonding, and electrical character
Phys. Rev. B 46, 10437 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
67.
1992

Patrin J. C.; Chander M.; Li Y. Z.; Weaver J. H.

Sb and Bi on GaAs(110): Substrate‐stabilized overlayer structures studied with scanning tunneling microscopy
Phys. Rev. B 46, 10221 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
68.
1992

Gu C.; Chen Y.; Ohno T. R.; Weaver J. H.

Br2 adsorption on GaAs(110) and surface etching at low temperature
Phys. Rev. B 46, 10197 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
69.
1992

Chen Y.; Poirier D. M.; Chibante L. P. F.; Weaver J. H.; Martins J. L.; Ohno T. R.; Gu C.; Jost M. B.; Smalley R. E.

Electronic structure of CaxC60 fullerides
Phys. Rev. B 46, 7961 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
70.
1992

Luo Y. S.; Yang Y.-N.; Weaver J. H.

Mechanisms for adatom‐induced disruption of Bi;2Sr2CaCu2O8(001); Scanning‐tunneling‐microscopy studies of Ag‐, Au‐, and Cr‐overlayer growth
Phys. Rev. B 46, 1114 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
71.
1992

Duszak R.; Palmstrøm C. J.; Florez L. T.; Yang Y.-N.; Weaver J. H.

Dramatic work function variations of molecular‐beam epitaxially grown GaAs(100) surfaces
J. Vac. Sci. Technol. B 10, 1891 (1992)
Bellcore, Red Bank, New Jersey 07701
72.
1992

Li Y. Z.; Chibante L. P. F.; Weaver J. H.; Patrin J. C.; Chander M.; Smalley R. E.

Adsorption of individual C60 molecules on Si(111)
Phys. Rev. B 45, 13837 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
73.
1992

Yang Y.-N.; Luo Y. S.; Weaver J. H.

Anisotropic kinetics in overlayer growth: A scanning‐tunneling‐microscopy study of Ge/GaAs(110)
Phys. Rev. B 45, 13803 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
74.
1992

Aldao C. M.; Palermo A.; Weaver J. H.

Calculated photocurrents and surface barrier heights
J. Vac. Sci. Technol. A 10, 493 (1992)
Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata, CONICET, Juan B. Justo 4302, 7600 Mar del Plata, Argentina
75.
1992

Chen Y.; Chibante L. P. F.; Weaver J. H.; Stepniak F.; Smalley R. E.

Fullerides of alkaline‐earth metals
Phys. Rev. B 45, 8845 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
76.
1992

Wu S. C.; Poirier D. M.; Jost M. B.; Weaver J. H.

Inverse‐photoemission study of the Pd(001) surface
Phys. Rev. B 45, 8709 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
77.
1992

Benning P. J.; Poirier D. M.; Ohno T. R.; Chen Y.; Jost M. B.; Stepniak F.; Kroll G. H.; Weaver J. H.; Fure J.; Smalley R. E.

C60 and C70 fullerenes and potassium fullerides
Phys. Rev. B 45, 6899 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
78.
1992

Gu C.; Stepniak F.; Poirier D. M.; Jost M. B.; Benning P. J.; Chen Y.; Ohno T. R.; Martins José Luriaas; Weaver J. H.; Fure J.; Smalley R. E.

Metallic and insulating phases of LixC60, NaxC60, and RbxC60
Phys. Rev. B 45, 6348 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
79.
1992

Patrin J. C.; Chander M.; Li Y. Z.; Weaver J. H.

Orientational ordering and domain‐wall formation in Sb overlayers on GaAs(110)
Phys. Rev. B 45, 3918 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
80.
1992

Yang Y.-N.; Luo Y. S.; Weaver J. H.

Ag crystallite formation and coalescence on hydrogen‐terminated GaAs(110)
Phys. Rev. B 45, 3606 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
81.
1992

Patrin J. C.; Li Y. Z.; Weaver J. H.

Cluster growth of Al on stepped and unstepped GaAs(110) at 300 K: A scanning‐tunneling‐microscopy examination
Phys. Rev. B 45, 1756 (1992)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
82.
1991

Ohno T. R.; Chen Y.; Harvey S. E.; Kroll G. H.; Weaver J. H.; Haufler R. E.; Smalley R. E.

C60 bonding and energy‐level alignment on metal and semiconductor surfaces
Phys. Rev. B 44, 13747 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55404
83.
1991

Hu Yongjun; Yang R.; Evans D. F.; Weaver J. H.

Direct measurements of bipolaron‐band development in doped polypyrrole with inverse photoemission
Phys. Rev. B 44, 13660 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
84.
1991

Li Y. Z.; Patrin J. C.; Chander M.; Weaver J. H.

Rare‐earth growth structures on GaAs(110); Ce, Sm , and Yb
Phys. Rev. B 44, 12903 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
85.
1991

Chen Y.; Seo J. M.; Stepniak F.; Weaver J. H.

Visible‐light‐induced oxidation for O;2 on GaAs(110); The role of hot electrons
J. Chem. Phys. 95, 8442 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
86.
1991

Li Y. Z.; Patrin J. C.; Chen Y.; Weaver J. H.

Mg ordering, reaction, and crystallite formation on GaAs(110): Scanning tunneling microscopy and photoemission studies
Phys. Rev. B 44, 8843 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
87.
1991

Seo J. M.; Chen Y.; Weaver J. H.

Oxide films grown on GaAs(110) at 20 K: Stability during Cr overlayer formation
J. Appl. Phys. 70, 4336 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
88.
1991

Yang Y.-N.; Trafas B. M.; Luo Y.-S.; Siefert R. L.; Weaver J. H.

Effect of nonthermally activated hopping on overlayer morphology: Scanning‐tunneling‐microscopy study of Ti/GaAs(110)
Phys. Rev. B 44, 5720 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
89.
1991

Yang Y.-N.; Siefert R. L.; Trafas B. M.; Weaver J. H.

GaAs(110) terrace‐width distributions and kink formation
Phys. Rev. B 44, 3218 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
90.
1991

Ohno T. R.; Pan S. H.; Yang Y.-N.; Kroll G. H.; Krause K.; Schmidt L. D.; Weaver J. H.; Kimachi Y.; Hidaka Y.; de Lozanne A. L.

Erratum: Cluster‐assembled overlayers and high‐temperature superconductors [Phys. Rev. B ;43, 7980 (1991)]
Phys. Rev. B 44, 2430 (1991)
91.
1991

Jost M. B.; Chibante L. P. F.; Weaver J. H.; Martins José Luís; Poirier D. M.; Troullier N.; Smalley R. E.

Band dispersion and empty electronic states in solid C60: Inverse photoemission and theory
Phys. Rev. B 44, 1966 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
92.
1991

Benning P. J.; Poirier D. M.; Troullier N.; Martins José Luriaas; Weaver J. H.; Haufler R. E.; Chibante L. P. F.; Smalley R. E.

Electronic states of solid C60: Symmetries and photoionization cross sections
Phys. Rev. B 44, 1962 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
93.
1991

Ohno T. R.; Patrin J. C.; Ayyala U. S.; Weaver J. H.

Ag deposition onto Xe: Clustering, incorporation, and surface attraction
Phys. Rev. B 44, 1891 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
94.
1991

Chen Y.; Seo J. M.; Anderson Steven G.; Weaver J. H.

Photoinduced oxidation of InP(110) with condensed O2 at 25 K
Phys. Rev. B 44, 1699 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
95.
1991

Komeda T.; Stepniak F.; Weaver J. H.

Schottky‐limit barrier heights for CO‐coated metal clusters on GaAs(110)
Appl. Phys. Lett. 58, 2809 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
96.
1991

Trafas B. M.; Yang Y.-N.; Siefert R. L.; Weaver J. H.

Scanning tunneling microscopy of Ag growth on GaAs(110) at 300 K: From clusters to crystallites
Phys. Rev. B 43, 14107 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
97.
1991

Aldao C. M.; Waddill G. D.; Vitomirov I. M.; Weaver J. H.

Effects of growth temperature on atom distributions, Fermi‐level positions, and valence‐band offsets for Ge/;n‐type InP(110) heterojunctions
Phys. Rev. B 43, 13952 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
98.
1991

Kroll G. H.; Ohno T. R.; Weaver J. H.

Nondisruptive oxide overlayer growth on GaAs(110)
Appl. Phys. Lett. 58, 2249 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
99.
1991

Chen Y.; Stepniak F.; Seo J. M.; Harvey S. E.; Weaver J. H.

Effects of surface band bending on low‐energy photon‐induced oxidation of GaAs(110)
Phys. Rev. B 43, 12086 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
100.
1991

Seo J. M.; Harvey S. E.; Chen Y.; Weaver J. H.

Initial stages of oxidation of Si(111) with condensed O2 and N2O at 20 K
Phys. Rev. B 43, 11893 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
101.
1991

Jost M. B.; Hu Yongjun; Poirier D. M.; Weaver J. H.

Empty electronic states of epitaxial Bi overlayers on InP(110): Effects of surface relaxation
J. Vac. Sci. Technol. A 9, 1972 (1991)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
102.
1991

Komeda T.; Anderson Steven G.; Seo J. M.; Schabel M. C.; Weaver J. H.

Sm/GaAs(110) interface formation: Surface instabilities and kinetic constraints
J. Vac. Sci. Technol. A 9, 1964 (1991)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
103.
1991

Waddill G. D.; Weaver J. H.; Benning P. J.; Komeda T.; Knapp G. S.

Photoelectron microscopy and spectroscopy using synchrotron radiation
J. Vac. Sci. Technol. A 9, 1634 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
104.
1991

Anderson Steven G.; Chen Y.; Seo J. M.; Weaver J. H.

InP(110) oxidation with O2, NO, and N2O at 20 K: Temperature and photon‐energy dependencies
Phys. Rev. B 43, 9621 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
105.
1991

Weaver J. H.; Martins José Luís; Komeda T.; Haufler R. E.; Troullier N.; Kroll G. H.; Ohno T. R.; Chen Y.; Smalley R. E.

Electronic structure of solid C60: Experiment and theory
Phys. Rev. Lett. 66, 1741 (1991)
Department of Materials Science and Chemical Engineering, Univeristy of Minnesota, Minneapolis, Minnesota 55455
106.
1991

Komeda T.; Waddill G. D.; Benning P. J.; Weaver J. H.

Photoelectron microscopy and spectroscopy of Bi2Sr2-;x‐ Ca;1+xCu2O8+y(100)
Phys. Rev. B 43, 8713 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
107.
1991

Ohno T. R.; Yang Y.-N.; Kroll G. H.; Krause K.; Schmidt L. D.; Weaver J. H.; Kimachi Y.; Hidaka Y.; Pan S. H.; de Lozanne A. L.

Cluster‐assembled overlayers and high‐temperature superconductors
Phys. Rev. B 43, 7980 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
108.
1991

Trafas B. M.; Hill D. M.; Benning P. J.; Waddill G. D.; Yang Y.-N.; Siefert R. L.; Weaver J. H.

Clustering and reaction for Cr/GaAs(110): Scanning tunneling microscopy and photoemission studies
Phys. Rev. B 43, 7174 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
109.
1991

Hu Yongjun; Jost M. B.; Weaver J. H.

Resonant inverse photoemission of Sb multilayers on GaAs(110) and InP(110) surfaces
J. Vac. Sci. Technol. B 9, 255 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
110.
1991

Kimachi Y.; Hidaka Y.; Ohno T. R.; Kroll G. H.; Weaver J. H.

Reactive metal overlayer formation on high‐temperature superconductors at 20 K
J. Appl. Phys. 69, 3176 (1991)
NTT Applied Electronics Laboratories, 162 Tokai, Ibaraki, 319‐11, Japan;
111.
1991

Chen Y.; Luo Y-S.; Seo J. M.; Weaver J. H.

Role of O2 negative‐ion formation in low‐energy electron‐induced oxidation of InP(110)
Phys. Rev. B 43, 4527 (1991)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
112.
1991

Meyer H. M.; Hill D. M.; Weaver J. H.; Goretta K. C.; Balachandran U.

Ni/YBa2Cu3O7-;x and Ni/Bi2Sr2Ca0.8Y0.2Cu2Ox interface formation; Reactivity, segregation, and chemical trapping
J. Mater. Res. 6, 270 (1991)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
113.
1990

Seo J. M.; Li Y. Z.; Anderson Steven G.; Aastuen D. J. W.; Ayyala U. S.; Kroll G. H.; Weaver J. H.

X‐ray‐induced low‐temperature oxidation; N;2O/GaAs(110)
Phys. Rev. B 42, 9080 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
114.
1990

Hu Yongjun; Wagener T. J.; Jost M. B.; Weaver J. H.

Long‐range ordering of Sb multilayers on GaAs(110); Evolution of resonant inverse photoemission
Phys. Rev. B 42, 7050 (1990)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
115.
1990

Wagener T. J.; Hu Y.-J.; Jost M. B.; Weaver J. H.; Yan Y. F.; Chu X.; Zhao Z. X.

Comparison of the empty electronic states of Bi2Sr2CaCu2O8 (001) and Bi2Sr2CuO6 (001) at 60 and 300 K
Phys. Rev. B 42, 6317 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
116.
1990

Anderson Steven G.; Komeda T.; Seo J. M.; Capasso C.; Waddill G. D.; Benning P. J.; Weaver J. H.

O2/GaAs(110) interface formation at 20 K: Photon‐induced reaction and desorption
Phys. Rev. B 42, 5082 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
117.
1990

Trafas B. M.; Hill D. M.; Siefert R. L.; Weaver J. H.

Adsorption and interaction of Sm on GaAs(110) studied by scanning tunneling microscopy
Phys. Rev. B 42, 3231 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
118.
1990

Jost M. B.; Hu Y.-J.; Wagener T. J.; Weaver J. H.

Ga 3d excitons at surfaces and interfaces
Phys. Rev. B 42, 2937 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
119.
1990

Aldao C. M.; Aastuen D. J. W.; Vos M.; Vitomirov I. M.; Waddill G. D.; Benning P. J.; Weaver J. H.

Interface formation with ions and neutral atoms
Phys. Rev. B 42, 2878 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
120.
1990

Ohno T. R.; Yang Y.-N.; Weaver J. H.; Kimachi Y.; Hidaka Y.

Ge on Bi2Sr2-;xCa1+xCu2O8+y; Reduced reactivity through cluster assembly
Appl. Phys. Lett. 57, 718 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
121.
1990

Wagener T. J.; Hu Y.-J.; Jost M. B.; Weaver J. H.

YBa2Cu3O7-;x (001) studied at 60 K with momentum‐resolved inverse photoemission
Phys. Rev. B 42, 1041 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
122.
1990

Hu Yong-Jun; Wagener T. J.; Jost M. B.; Weaver J. H.

Electrovoltaic effects and symmetric band bending: Inverse photoemission of epitaxial Bi/GaAs(110) between 60 and 300 K
J. Vac. Sci. Technol. B 8, 1001 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
123.
1990

Vitomirov I. M.; Aldao C. M.; Waddill G. D.; Weaver J. H.

A 20–350 K variable‐temperature sample holder with sample interchangeability
J. Vac. Sci. Technol. A 8, 3368 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
124.
1990

Anderson Steven G.; Seo J. M.; Komeda T.; Capasso C.; Weaver J. H.

Production of highly oxidized As on GaAs (110) at 20 K
Appl. Phys. Lett. 56, 2510 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
125.
1990

Liliental-Weber Zuzanna; Weber E. R.; Washburn J.; Weaver J. H.

Schottky barrier contacts on defect‐free GaAs (110)
Appl. Phys. Lett. 56, 2507 (1990)
Lawrence Berkeley Laboratory 62‐203, 1 Cyclotron Road, Berkeley, California 94720;
126.
1990

Ohno T. R.; Patrin J. C.; Meyer III H. M.; Weaver J. H.; Kimachi Y.; Hidaka Y.

Atom‐ and cluster‐assembled interfaces;;Cr growth on Bi2Sr2-;xCa1+xCu2O8+y
Phys. Rev. B 41, 11677 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
127.
1990

Waddill G. D.; Yang Y.-N.; Komeda Tadahiro; Weaver J. H.

Photoemission from metal dots on GaAs(110): Surface photovoltages and conductivity
Phys. Rev. B 41, 10283 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
128.
1990

Trafas B. M.; Meyer H. M.; Aldao C. M.; Siefert R. L.; Vos M.; Xu F.; Weaver J. H.

CdTe(110) interface formation with reactive and nonreactive overlayers: Al, Ti, Pd, Ag, Au, In, and Ce
J. Vac. Sci. Technol. A 8, 2055 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
129.
1990

Vitomirov I. M.; Aldao C. M.; Waddill G. D.; Capasso C.; Weaver J. H.

Metal‐InP(110) interface properties; Temperature, dopant‐concentration, and cluster‐deposition dependencies
Phys. Rev. B 41, 8465 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
130.
1990

Komeda T.; Hirano Toshiyuki; Waddill G. D.; Anderson Steven G.; Sullivan J. P.; Weaver J. H.

CoSi2(111), FeSi2(001), and MoSi2(001) surfaces and interfaces with Ti
Phys. Rev. B 41, 8345 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
131.
1990

Aldao C. M.; Waddill G. D.; Benning P. J.; Capasso C.; Weaver J. H.

Photovoltaic effects in temperature‐dependent Fermi‐level movement for GaAs(110)
Phys. Rev. B 41, 6092 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
132.
1990

Waddill G. D.; Aldao C. M.; Capasso C.; Benning P. J.; Hu Yongjun; Wagener T. J.; Jost M. B.; Weaver J. H.

Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse‐photoemission investigations
Phys. Rev. B 41, 5960 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
133.
1990

Hu Yongjun; Wagener T. J.; Jost M. B.; Weaver J. H.

Epitaxial Sn and Bi on GaAs(110): Inverse photoemission, shallow core‐hole emission, and Ga 3;d excitons
Phys. Rev. B 41, 5817 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
134.
1990

Seo J. M.; Anderson Steven G.; Komeda T.; Capasso C.; Weaver J. H.

Dynamic photoinduced low‐temperature oxidation of GaAs(110)
Phys. Rev. B 41, 5455 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
135.
1990

Waddill G. D.; Vitomirov I. M.; Aldao C. M.; Anderson S. G.; Capasso C.; Weaver J. H.; Liliental-Weber Z.

Abrupt interfaces with novel structural and electronic properties: Metal‐cluster deposition and metal‐semiconductor junctions
Phys. Rev. B 41, 5293 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
136.
1990

Wagener T. J.; Meyer H. M.; Hu Yongjun; Jost M. B.; Weaver J. H.; Goretta K. C.

O 2p holes: Temperature effects and surface characteristics of cuprate superconductors
Phys. Rev. B 41, 4201 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
137.
1990

Aldao C. M.; Vitomirov I. M.; Waddill G. D.; Anderson Steven G.; Weaver J. H.

Dynamic‐coupling model; Interpretation of temperature‐, dopant‐concentration‐, and coverage‐dependent Schottky‐barrier formation
Phys. Rev. B 41, 2800 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
138.
1990

Meyer H. M.; Weaver J. H.; Goretta K. C.

Surface reactivity and interface morphology for Ti growth on YBa2Cu3O7-;x, Y2BaCuO5, and CuO
J. Appl. Phys. 67, 1995 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
139.
1990

Sullivan J. P.; Hirano Toshiyuki; Komeda T.; Meyer H. M.; Trafas B. M.; Waddill G. D.; Weaver J. H.

Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001)
Appl. Phys. Lett. 56, 671 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
140.
1990

Vos M.; Aldao C. M.; Aastuen D. J. W.; Weaver J. H.

Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky‐barrier formation
Phys. Rev. B 41, 991 (1990)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
141.
1989

Franciosi A.; Wall A.; Gao Y.; Weaver J. H.; Tsai M.-H.; Dow J. D.; Kasowski R. V.; Reifenberger R.; Pool F.

d states, exchange splitting, and Mn electronic configuration in Cd1-;xMnxTe
Phys. Rev. B 40, 12009 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
142.
1989

Anderson Steven G.; Aldao C. M.; Waddill G. D.; Vitomirov I. M.; Capasso C.; Weaver J. H.

Fermi level movement for n‐ and ;p‐GaAs interfaces; Effects of temperature and dopant concentration
Appl. Phys. Lett. 55, 2547 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
143.
1989

Trafas B. M.; Aldao C. M.; Capasso C.; Shapira Yoram; Boscherini F.; Vitomirov I. M.; Weaver J. H.

Development of rare‐earth;–;semiconductor interfaces; Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110)
Phys. Rev. B 40, 9811 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
144.
1989

Chelikowsky J. R.; Wagener T. J.; Weaver J. H.; Jin A.

Valence‐ and conduction‐band densities of states for tetrahedral semiconductors; Theory and experiment
Phys. Rev. B 40, 9644 (1989)
Department of Chemical Engineering and Materials Science and Minnesota Supercomputer Institute, University of Minnesota, Minneapolis, Minnesota 55455
145.
1989

Anderson Steven G.; Aldao C. M.; Waddill G. D.; Vitomirov I. M.; Severtson S. J.; Weaver J. H.

Temperature‐dependent Al/GaAs(110) interface formation and adatom energy references
Phys. Rev. B 40, 8305 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
146.
1989

Vos M.; Xu F.; Weaver J. H.

Metal/CaF2/Si heterostructures: Interface evolution and electronic properties
J. Appl. Phys. 66, 2467 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
147.
1989

Wagener T. J.; Meyer H. M.; Hill D. M.; Hu Yongjun; Jost M. B.; Weaver J. H.; Hinks D. G.; Dabrowski B.; Richards D. R.

Photoemission and inverse‐photoemission studies of Ba;1-;xKxBiO3-;y
Phys. Rev. B 40, 4532 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
148.
1989

Trafas B. M.; Xu F.; Vos M.; Aldao C. M.; Weaver J. H.

Metal/GaP(110) interface formation: Ti, Pd, Ag, and Au adatom deposition
Phys. Rev. B 40, 4022 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
149.
1989

Aldao C. M.; Vitomirov I. M.; Xu F.; Weaver J. H.

Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions
Phys. Rev. B 40, 3711 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
150.
1989

Vitomirov I. M.; Waddill G. D.; Aldao C. M.; Anderson Steven G.; Capasso C.; Weaver J. H.

Reversible temperature‐dependent Fermi‐level movement for metal‐GaAs(110) interfaces
Phys. Rev. B 40, 3483 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
151.
1989

Aldao C. M.; Waddill G. D.; Anderson S. G.; Weaver J. H.

Temperature effects for Ti/GaAs(110) interface formation involving cluster and atom deposition
Phys. Rev. B 40, 2932 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
152.
1989

Hu Yongjun; Wagener T. J.; Jost M. B.; Weaver J. H.

Evolution of empty‐state bands for Bi/GaAs(110); From Bi zigzag chains to ordered overlayers
Phys. Rev. B 40, 1146 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
153.
1989

Waddill G. D.; Aldao C. M.; Vitomirov I. M.; Anderson Steven G.; Capasso C.; Weaver J. H.

Ag and Co cluster deposition on GaAs(110): Fermi level pinning in the absence of metal‐induced gap states and defects
J. Vac. Sci. Technol. B 7, 950 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
154.
1989

Xu F.; Hill D. M.; Benning P. J.; Weaver J. H.

Activated metal deposition and oxide growth on semiconductors: TiO2/Si(111)‐2×1
J. Vac. Sci. Technol. A 7, 2593 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
155.
1989

Aldao C. M.; Anderson Steven G.; Capasso C.; Waddill G. D.; Vitomirov I. M.; Weaver J. H.

Dopant concentration dependences and symmetric Fermi‐level movement for metal/;n‐type and ;p‐type GaAs(110) interfaces formed at 60 K
Phys. Rev. B 39, 12977 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
156.
1989

Hill D. M.; Meyer H. M.; Weaver J. H.

Y, Ba, Cu, and Ti interface reactions with SrTiO3 (100) surfaces
J. Appl. Phys. 65, 4943 (1989)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
157.
1989

Vos M.; Xu F.; Anderson Steven G.; Weaver J. H.; Cheng H.

Photoemission studies of interface chemistry and Schottky barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Au, Ce, and Al
Phys. Rev. B 39, 10744 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
158.
1989

Waddill G. D.; Aldao C. M.; Vitomirov I. M.; Gao Y.; Weaver J. H.

Temperature‐dependent interface morphology and Schottky barrier evolution for Au/InP(110)
J. Vac. Sci. Technol. A 7, 865 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
159.
1989

Aldao C. M.; Waddill G. D.; Vitomirov I. M.; Weaver J. H.

Interface formation by atom and cluster deposition: Novel electronic and structural properties
J. Vac. Sci. Technol. A 7, 817 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
160.
1989

Vitomirov I. M.; Aldao C. M.; Schabel M.; Waddill G. D.; Anderson S. G.; Weaver J. H.

Energies and symmetries in interface formation: In/GaP(110) and Ga/InP(110)
J. Vac. Sci. Technol. A 7, 758 (1989)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
161.
1989

Wall A.; Franciosi A.; Dow J. D.; Tsai M.-H.; Weaver J. H.; Gao Y.; Kasowski R. V.

Inverse photoemission and resonant photoemission characterization of semimagnetic semiconductors
J. Vac. Sci. Technol. A 7, 656 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
162.
1989

Hu Yongjun; Wagener T. J.; Gao Y.; Weaver J. H.

Empty‐electronic‐state evolution for Sc and electron dynamics at the 3;p‐3;d giant dipole resonance
Phys. Rev. B 39, 8162 (1989)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
163.
1989

Xu F.; Vos M.; Weaver J. H.

Influence of Au overlayers on valence‐band offsets for buried CaF;2/Si(111) interfaces
Phys. Rev. B 39, 8008 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
164.
1989

Meyer III H. M.; Hill D. M.; Wagener T. J.; Weaver J. H.; Gallo C. F.; Goretta K. C.

Single‐crystal YBa;2Cu3O7-;x and Bi2Ca1+xSr2-;xCu2O8+y surfaces and Ag adatom‐induced modification
J. Appl. Phys. 65, 3130 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
165.
1989

Meyer H. M.; Wagener T. J.; Weaver J. H.; Ginley D. S.

Photoemission and inverse resonant photoemission studies of Tl2Ba2Ca2Cu3O10+y
Phys. Rev. B 39, 7343 (1989)
Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
166.
1989

Waddill G. D.; Vitomirov I. M.; Aldao C. M.; Weaver J. H.

Cluster deposition on GaAs(110): Formation of abrupt, defect‐free interfaces
Phys. Rev. Lett. 62, 1568 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
167.
1989

Anderson Steven G.; Xu F.; Vos M.; Weaver J. H.; Cheng H.

Schottky‐barrier formation and atomic mixing at Au/ZnSe(100) and Co/ZnSe(100) interfaces with Co and Au interlayers
Phys. Rev. B 39, 5079 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
168.
1989

Vos M.; Anderson Steven G.; Weaver J. H.

Inelastic mean free paths for electrons at disordered interfaces
Phys. Rev. B 39, 3274 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
169.
1989

Trafas B. M.; Vitomirov I. M.; Aldao C. M.; Gao Y.; Xu F.; Weaver J. H.; Partin D. L.

Cr, Co, Pd, Au, and In overlayers on PbS(100): Adatom interactions and interface formation
Phys. Rev. B 39, 3265 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
170.
1989

Wagener T. J.; Spencer N. D.; Weaver J. H.; Jost M. B.; Gao Y.; Hu Yongjun; Goretta K. C.

Resonant inverse photoemission of Bi2Ca1+xSr2-;xCu2O8+y and YBa2Cu3O7-;x, unoccupied oxygen states, and plasmons
Phys. Rev. B 39, 2928 (1989)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
171.
1989

Weaver J. H.; Meyer H. M.; Wagener T. J.; Hill D. M.; Hu Y.

Surface and interface properties of high temperature superconductors
AIP Conf. Proc. 182, 399 (1989)
Materials Science, University of Minnesota, Minneapolis, MN 55455
172.
1988

Aldao C. M.; Vitomirov I. M.; Waddill G. D.; Weaver J. H.

Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110)
Appl. Phys. Lett. 53, 2647 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
173.
1988

Xu F.; Vos M.; Weaver J. H.; Cheng H.

Interface dipoles, surface work functions, and Schottky‐barrier formation at Au/ZnSe(100) interfaces
Phys. Rev. B 38, 13418 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
174.
1988

Hu Yongjun; Wagener T. J.; Gao Y.; Weaver J. H.

Resonant inverse photoemission involving transition‐metal 3;p‐3;d subshell interactions
Phys. Rev. B 38, 12708 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
175.
1988

Vitomirov I. M.; Aldao C. M.; Lin Zhangda; Gao Y.; Trafas B. M.; Weaver J. H.

Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation
Phys. Rev. B 38, 10776 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
176.
1988

Hill D. M.; Meyer H. M.; Weaver J. H.; Nelson D. L.

Passivation of high Tc superconductor surfaces with CaF2 and Bi, Al, and Si oxides
Appl. Phys. Lett. 53, 1657 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
177.
1988

Vos M.; Xu F.; Weaver J. H.; Cheng H.

Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100)
Appl. Phys. Lett. 53, 1530 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
178.
1988

Xu F.; Vos M.; Sullivan J. P.; Atanasoska Lj.; Anderson Steven G.; Weaver J. H.; Cheng H.

Band‐gap discontinuities for Ge/ZnSe(100) and Si/ZnSe(100); A photoemission study
Phys. Rev. B 38, 7832 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
179.
1988

Meyer H. M.; Hill D. M.; Weaver J. H.; Nelson D. L.; Gallo C. F.

Occupied electronic states of single‐crystal Bi;2Ca1+xSr2+xCu2O8+y
Phys. Rev. B 38, 7144 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
180.
1988

Meyer H. M.; Hill D. M.; Wagener T. J.; Gao Y.; Weaver J. H.; Capone D. W.; Goretta K. C.

Electronic structures of the YBa2Cu3O7-;x surface and its modification by sputtering and adatoms of Ti and Cu
Phys. Rev. B 38, 6500 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
181.
1988

Meyer H. M.; Hill D. M.; Weaver J. H.; Nelson D. L.; Goretta K. C.

Reactivity and passivation for Bi adatoms on YBa2Cu3O6.9 and Bi2Ca1+xSr2-;xCu2O8+y
Appl. Phys. Lett. 53, 1004 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
182.
1988

Weaver J. H.; Meyer H. M.; Wagener T. J.; Hill D. M.; Gao Y.; Peterson D.; Fisk Z.; Arko A. J.

Valence bands, oxygen in planes and chains, and surface changes for single crystals of M2CuO4 and MBa2Cu3Ox (M=Pr,Nd,Eu,Gd)
Phys. Rev. B 38, 4668 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
183.
1988

Hu Yongjun; Wagener T. J.; Gao Y.; Meyer H. M.; Weaver J. H.

Empty electronic states of graphite and the growth of Au and Pd clusters
Phys. Rev. B 38, 3037 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
184.
1988

Gao Y.; Wagener T. J.; Aldao C. M.; Vitomirov I. M.; Weaver J. H.; Capone D. W.

Photoemission and inverse photoemission studies of La adatom interactions with YBa2Cu3O6.9
J. Appl. Phys. 64, 1296 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
185.
1988

Hill D. M.; Xu F.; Lin Zhangda; Weaver J. H.

Atomic distributions across metal–;III‐V‐compound‐semiconductor interfaces
Phys. Rev. B 38, 1893 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
186.
1988

Wagener T. J.; Gao Y.; Vitomirov I. M.; Aldao C. M.; Joyce J. J.; Capasso C.; Weaver J. H.; Capone II D. W.

Disruption, segregation, and passivation for Pd and noble‐metal overlayers on YBa;2Cu3O6.9
Phys. Rev. B 38, 232 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
187.
1988

Anderson Steven G.; Meyer H. M.; Weaver J. H.

Temperature‐dependent x‐ray photoemission studies of metastable Co/polyimide interface formation
J. Vac. Sci. Technol. A 6, 2205 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
188.
1988

Atanasoska Lj.; Meyer H. M.; Anderson Steven G.; Weaver J. H.

Semiconductor/polyimide interface formation: An x‐ray photoelectron spectroscopy study of germanium chemical bonding
J. Vac. Sci. Technol. A 6, 2175 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
189.
1988

Xu F.; Hill D. M.; Lin Zhangda; Anderson Steven G.; Shapira Yoram; Weaver J. H.

Temperature‐dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces
Phys. Rev. B 37, 10295 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
190.
1988

O'Neill D. G.; Weaver J. H.

Evolution of the electronic structure of the Cr/Au(001) interface
Phys. Rev. B 37, 8122 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
191.
1988

Boscherini F.; Shapira Y.; Capasso C.; Weaver J. H.

Synchrotron‐radiation photoemission studies of Cu/InSb(110) interface evolution and modification by Al interlayers
Phys. Rev. B 37, 8022 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
192.
1988

O'Neill D. G.; Weaver J. H.

Two‐dimensional energy bands for Cr/Au(001)
J. Vac. Sci. Technol. A 6, 582 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
193.
1988

Chambers S. A.; Chen H. W.; Wagener T. J.; Weaver J. H.

Summary Abstract: Nucleation and growth of ultrathin metallic overlayers on single‐crystal transition‐metal surfaces
J. Vac. Sci. Technol. A 6, 1994 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
194.
1988

Aldao C. M.; Xu F.; Vitomirov I. M.; Weaver J. H.

Summary Abstract: CoSi2 diffusion barrier modulation of Au/Si(111) interface reactions
J. Vac. Sci. Technol. A 6, 1609 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
195.
1988

Vitomirov I. M.; Xu F.; Aldao C. M.; Weaver J. H.

Summary Abstract: Direct evidence of the onset of In surface segregation for Co/InP(110)
J. Vac. Sci. Technol. A 6, 1563 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
196.
1988

Hill D. M.; Lin Zhangda; Xu F.; Weaver J. H.

Summary Abstract: X‐ray photoelectron spectroscopy measurements of kinetic parameters at elevated temperature for Ge/Si(111)‐7×7 heterojunction formation
J. Vac. Sci. Technol. A 6, 1350 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
197.
1988

Meyer H. M.; Anderson Steven G.; Atanasoska Lj.; Weaver J. H.

Summary Abstract: X‐ray photoemission investigation of electron injection and trapping at the gold/polyimide interface
J. Vac. Sci. Technol. A 6, 1002 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
198.
1988

Aldao C. M.; Vitomirov I. M.; Xu F.; Weaver J. H.

3d transition metals on InP(110): A comparative study of reactive interface evolution
Phys. Rev. B 37, 6019 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
199.
1988

Smandek B.; Gao Y.; Wagener T. J.; Weaver J. H.; Lévy F.; Margaritondo G.

Bremsstrahlung‐isochromat study of the layered compounds InSe, TiSe;2, SnSe2, SnS2, and Bi2Te3
Phys. Rev. B 37, 4196 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
200.
1988

Gao Y.; Vitomirov I. M.; Aldao C. M.; Wagener T. J.; Joyce J. J.; Capasso C.; Weaver J. H.; II D. W. Capone

Synchrotron‐radiation photoemission studies of interface formation between metals and superconductors; Al and In on YBa;2Cu3O6.9
Phys. Rev. B 37, 3741 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
201.
1988

Wagener T. J.; Gao Y.; Meyer H. M.; Vitomirov I. M.; Aldao C. M.; Hill D. M.; Weaver J. H.; Flandermeyer B.; Capone D. W.

Spectroscopic examinations of surface stability of high‐temperature superconductors
AIP Conf. Proc. 165, 368 (1988)
Department of Chemical Engineering and Materials Sciences, University of Minnesota, Minneapolis, MN 55455
202.
1988

Gao Y.; Meyer H. M.; Wagener T. J.; Hill D. M.; Anderson S. G.; Weaver J. H.; Flandermeyer B.; Capone D. W.

Interface formation: High‐temperature superconductors with noble metals, reactive transition metals, and semiconductors
AIP Conf. Proc. 165, 358 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
203.
1988

Meyer H. M.; Gao Y.; Wagener T. J.; Hill D. M.; Weaver J. H.; Flandermeyer B. K.; Capone D. W.

High‐temperature superconductors; Occupied and unoccupied electronic states
AIP Conf. Proc. 165, 254 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
204.
1988

Gao Y.; Wagener T. J.; Weaver J. H.; Capone D. W.

Interface formation of semiconductors with high‐;Tc superconductors; Ge/La1.85Sr0.15CuO4
Phys. Rev. B 37, 515 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
205.
1988

Hill D. M.; Gao Y.; Meyer H. M.; Weaver J. H.; Wagener T. J.; Capone D. W.

Cu‐induced surface disruption of La;1.85Sr0.15CuO4
Phys. Rev. B 37, 511 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
206.
1988

Anderson Steven G.; Meyer H. M.; Atanasoska Lj.; Weaver J. H.

Dynamics of polyimide curing and degradation: An insitu x‐ray photoemission study
J. Vac. Sci. Technol. A 6, 38 (1988)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
207.
1988

Meyer H. M.; Atanasoska Lj.; Anderson Steven G.; Weaver J. H.

X‐ray photoemission investigations of clustering and electron emission, injection, and trapping at the gold/polyimide interface
J. Vac. Sci. Technol. A 6, 30 (1988)
Department of Chemical Engineering and Material Science, University of Minnesota, Minneapolis, Minnesota 55455
208.
1987

Chambers S. A.; Wagener T. J.; Weaver J. H.

Formation and structure of Fe/Cu(001) interfaces, sandwiches, and superlattices
Phys. Rev. B 36, 8992 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
209.
1987

Xu F.; Aldao C. M.; Vitomirov I. M.; Weaver J. H.

Abruptness of Au‐Si contacts with thin CoSi;2 interlayers
Appl. Phys. Lett. 51, 1946 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
210.
1987

Meyer H. M.; Hill D. M.; Anderson Steven G.; Weaver J. H.; Capone D. W.

Titanium‐oxygen reaction at the Ti/La;1.85Sr0.15CuO4 interface
Appl. Phys. Lett. 51, 1750 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
211.
1987

Atanasoska Lj.; Anderson Steven G.; Meyer H. M.; Lin Zhangda; Weaver J. H.

Aluminum/polyimide interface formation: An x‐ray photoelectron spectroscopy study of selective chemical bonding
J. Vac. Sci. Technol. A 5, 3325 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
212.
1987

Xu F.; Lin Zhangda; Hill D. M.; Weaver J. H.

Temperature‐dependent interface evolution for Ti/GaAs(100) and Cr/GaAs(100)
Phys. Rev. B 36, 6624 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
213.
1987

Lin Zhangda; Xu F.; Weaver J. H.

Surface segregation at metalndashIII‐V‐compound‐semiconductor interfaces
Phys. Rev. B 36, 5777 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
214.
1987

Meyer H. M.; Wagener T. J.; Hill D. M.; Gao Y.; Anderson S. G.; Krahn S. D.; Weaver J. H.; Flandermeyer B.; Capone D. W.

Spectroscopic evidence for passivation of the La1.85Sr0.15CuO4 surface with gold
Appl. Phys. Lett. 51, 1118 (1987)
Department of Chemical Engineering and Material Science, University of Minnesota, Minneapolis, Minnesota 55455
215.
1987

Gao Y.; Wagener T. J.; Weaver J. H.; Flandermeyer B.; Capone D. W.

Reaction and intermixing at metal‐superconductor interfaces; Fe/YBa;2Cu3O6.9
Appl. Phys. Lett. 51, 1032 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
216.
1987

del Giudice M.; Joyce J. J.; Weaver J. H.

Core‐level binding‐energy shifts, thermodynamic predictions, and morphologies for metal‐Si and metal‐Ge interfaces
Phys. Rev. B 36, 4761 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
217.
1987

Butera R. A.; del Giudice M.; Weaver J. H.

Temperature‐dependent interface evolution; Modeling of core‐level photoemission results for V/Ge(111)
Phys. Rev. B 36, 4754 (1987)
Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
218.
1987

Hill D. M.; Flandermeyer B.; Weaver J. H.; Meyer H. M.; Capone D. W.

Oxygen withdrawal, copper valency, and interface reaction for Fe/La1.85Sr0.15CuO4
Phys. Rev. B 36, 3979 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
219.
1987

Weaver J. H.; Gao Y.; Wagener T. J.; Flandermeyer B.; Capone D. W.

Reaction and disruption for Fe/La1.85Sr0.15CuO4: Interface formation for high‐temperature superconductors
Phys. Rev. B 36, 3975 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
220.
1987

Gao Y.; Wagener T. J.; Weaver J. H.; Arko A. J.; Flandermeyer B.; Capone D. W.

Inverse photoemission studies of the empty electronic states and surface stability of La1.85Sr0.15CuO4
Phys. Rev. B 36, 3971 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
221.
1987

Wagener T. J.; Gao Y.; Weaver J. H.; Arko A. J.; Flandermeyer B.; Capone D. W.

Unoccupied electronic states and surface phenomena for YBa2Cu3O6.9
Phys. Rev. B 36, 3899 (1987)
Department of Chemical Engineering and Materials Science, University of Minneosta, Minneapolis, Minnesota 55455
222.
1987

Xu F.; Aldao C. M.; Vitomirov I. M.; Lin Zhangda; Weaver J. H.

Direct evidence of the onset of In surface segregation for Co/InP(110)
Phys. Rev. B 36, 3495 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
223.
1987

Chambers S. A.; Vitomirov I. M.; Weaver J. H.

Incident beam effects in medium‐energy backscattered electron diffraction
Phys. Rev. B 36, 3007 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
224.
1987

Joyce J. J.; Boscherini F.; Ruckman M. W.; Weaver J. H.

Chemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers
Phys. Rev. B 36, 1605 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
225.
1987

Fujimori A.; Grioni M.; Joyce J. J.; Weaver J. H.

Chemical bonding in ordered Ce overlayers on Si(111)
Phys. Rev. B 36, 1075 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
226.
1987

Shapira Yoram; Xu F.; Hill D. M.; Weaver J. H.

Use of angle‐dependent photoemission for atom profiling; Au on compound semiconductors
Appl. Phys. Lett. 51, 118 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
227.
1987

Boscherini F.; Aldao C. M.; Capasso C.; Shapira Yoram; Weaver J. H.

Cr/InSb(110): A study of interface development with high‐resolution core‐level photoemission
J. Vac. Sci. Technol. B 5, 1003 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
228.
1987

Chambers S. A.; Ruckman M. W.; Chen H. W.; Joyce J. J.; Anderson S. B.; Boscherini F.; Weaver J. H.

Summary Abstract: Reaction and epitaxy at the Co/Si(111) interface
J. Vac. Sci. Technol. A 5, 2142 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
229.
1987

Joyce J. J.; Grioni M.; del Giudice M.; Ruckman M. W.; Boscherini F.; Weaver J. H.

Systematics of electronic structure and local bonding for metal/GaAs(110) interfaces
J. Vac. Sci. Technol. A 5, 2019 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
230.
1987

Chambers S. A.; del Giudice M.; Hill D. M.; Xu F.; Joyce J. J.; Ruckman M. W.; Weaver J. H.

Summary Abstract: Silicide formation at the Ti/Si(111) interface
J. Vac. Sci. Technol. A 5, 1508 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
231.
1987

Boscherini F.; del Giudice M.; Aldao C.; Capasso C.; Shapira Y.; Weaver J. H.

Exchange reaction, clustering, and surface segregation at the Al/InSb(110) interface
Phys. Rev. B 35, 9580 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
232.
1987

Gao Y.; Smandek B.; Wagener T. J.; Weaver J. H.; Lévy F.; Margaritondo G.

Bremsstrahlung‐isochromat studies of conduction‐band states in SnS;2 and SnSe2
Phys. Rev. B 35, 9357 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
233.
1987

Xu F.; Lin Zhangda; Hill D. M.; Weaver J. H.

Temperature‐dependent reaction and buried‐interface movement for Ti/GaAs(100) and Cr/GaAs(100)
Phys. Rev. B 35, 9353 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
234.
1987

Xu F.; Shapira Yoram; Hill D. M.; Weaver J. H.

Atom profiles of interfaces with polar‐angle‐dependent photoemission; Au/GaAs(100)
Phys. Rev. B 35, 7417 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
235.
1987

del Giudice M.; Ruckman M. W.; Joyce J. J.; Weaver J. H.

Silicide formation at the Ti/Si(111) interface: Room‐temperature reaction and Schottky‐barrier formation
Phys. Rev. B 35, 6213 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
236.
1987

O'Neill D. G.; Weaver J. H.

Evolution of a surface state into an interface state: A probe of the buried epitaxial Cr/Au(100) interface
Phys. Rev. B 35, 5892 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
237.
1987

Boscherini F.; Joyce J. J.; Ruckman M. W.; Weaver J. H.

High‐resolution photoemission study of Co/Si(111) interface formation
Phys. Rev. B 35, 4216 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
238.
1987

Chambers S. A.; Anderson S. B.; Chen H. -W.; Weaver J. H.

Growth of metastable fcc Co on Ni(001)
Phys. Rev. B 35, 2592 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
239.
1987

Chambers S. A.; Vitomirov I. M.; Anderson S. B.; Weaver J. H.

Medium‐energy backscattered electron diffraction as a probe of elastic strain in epitaxial overlayers
Phys. Rev. B 35, 2490 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
240.
1987

Xu F.; Joyce J. J.; Ruckman M. W.; Chen H. -W.; Boscherini F.; Hill D. M.; Chambers S. A.; Weaver J. H.

Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)‐;c(82)
Phys. Rev. B 35, 2375 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
241.
1987

Chambers S. A.; Hill D. M.; Xu F.; Weaver J. H.

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
Phys. Rev. B 35, 634 (1987)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
242.
1986

Chambers S. A.; Anderson S. B.; Vitomirov I. M.; Chen H. W.; Xu F.; Weaver J. H.

Simultaneous epitaxy and substrate out‐diffusion at a metal‐semiconductor interface; Fe/GaAs(001)‐;c(8×2)
Phys. Rev. B 34, 6605 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
243.
1986

Ruckman M. W.; Joyce J. J.; Boscherini F.; Weaver J. H.

Asymmetries in atomic intermixing at Au/Ge and Ge/Au interfaces
Phys. Rev. B 34, 5118 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
244.
1986

Ruckman M. W.; del Giudice M.; Joyce J. J.; Weaver J. H.

Soft‐x‐ray photoemission study of Cr‐Ge intermixing on crystalline and amorphous Ge surfaces
Phys. Rev. B 34, 4010 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
245.
1986

Chambers S. A.; Chen H. W.; Anderson S. B.; Weaver J. H.

Incident beam effects in angle‐resolved Auger electron spectroscopy
Phys. Rev. B 34, 3055 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
246.
1986

Chambers S. A.; Anderson S. B.; Chen H. W.; Weaver J. H.

High‐temperature nucleation and silicide formation at the Co/Si(111)-7×7 interface; A structural investigation
Phys. Rev. B 34, 913 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
247.
1986

Ruckman M. W.; del Giudice M.; Joyce J. J.; Weaver J. H.

Comparative study of the formation of Cr/Ge and Ge/Cr thin‐film interfaces
Phys. Rev. B 33, 8039 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
248.
1986

Ruckman M. W.; Joyce J. J.; Weaver J. H.

Interdiffusion and reaction at the Fe/GaAs(110) interface
Phys. Rev. B 33, 7029 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
249.
1986

Grioni M.; Joyce J. J.; Weaver J. H.

Metal–anion bond strength and room temperature diffusion at metal/GaAs interfaces; Transition versus rare‐earth versus Au metal overlayers
J. Vac. Sci. Technol. A 4, 965 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
250.
1986

del Giudice M.; Butera R. A.; Joyce J. J.; Ruckman M. W.; Weaver J. H.

V/Ge(111): Temperature dependent intermixing studied with high resolution photoemission and quantitative modeling
J. Vac. Sci. Technol. A 4, 879 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
251.
1986

Chambers S. A.; del Giudice M.; Ruckman M. W.; Anderson S. B.; Weaver J. H.; Lapeyre G. J.

High‐resolution electron energy loss spectroscopy as a probe of surface morphology and electronic states at metal/semiconductor interfaces
J. Vac. Sci. Technol. A 4, 1595 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
252.
1986

Butera R. A.; del Giudice M.; Weaver J. H.

Quantitative model of reactive metal‐semiconductor interface growth using high‐resolution photoemission results
Phys. Rev. B 33, 5435 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
253.
1986

Ruckman M. W.; del Giudice M.; Joyce J. J.; Weaver J. H.

Photoemission study of the development of the Ti/GaAs(110) interface
Phys. Rev. B 33, 2191 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
254.
1986

Fujimori A.; Grioni M.; Weaver J. H.

Rare‐earth‐metal;–;semiconductor interfacial reactions; Thermodynamic aspects
Phys. Rev. B 33, 726 (1986)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
255.
1985

del Giudice M.; Joyce J. J.; Ruckman M. W.; Weaver J. H.

Cluster formation and atomic intermixing at the reactive V/Ge(111) interface
Phys. Rev. B 32, 5149 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
256.
1985

Chambers S. A.; Anderson S. B.; Weaver J. H.

Structural characterization of metal‐metal interfaces by intermediate‐energy Auger‐electron diffraction
Phys. Rev. B 32, 4872 (1985)
Department of Chemistry, Bethel College, St. Paul, Minnesota 55112
257.
1985

Chambers S. A.; Greenlee T. R.; Smith C. P.; Weaver J. H.

Quantitative characterization of abrupt interfaces by angle‐resolved Auger electron emission
Phys. Rev. B 32, 4245 (1985)
Department of Chemistry, Bethel College, St. Paul, Minnesota 55112
258.
1985

Weaver J. H.; Peterson D. T.; Butera R. A.; Fujimori A.

Electronic interactions in metal‐hydrogen solid solutions; ScH;x, YHx, and V0.75Nb0.25Hx
Phys. Rev. B 32, 3562 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
259.
1985

Fujimori Atsushi; Weaver J. H.

4f‐5;d hybridization and the α;‐;γ; phase transition in cerium
Phys. Rev. B 32, 3422 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
260.
1985

Chambers S. A.; Weaver J. H.

Thermally induced structural and compositional modification of the Cu/Si(111)‐7×7 interface
J. Vac. Sci. Technol. A 3, 1929 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
261.
1985

Paolucci G.; Colavita E.; Weaver J. H.

Thermoreflectance investigation of zirconium hydrides in the face‐centered‐tetragonal phase
Phys. Rev. B 32, 2610 (1985)
Dipartimento di Fisica, Universitá degli Studi di Roma I, piazzale Aldo Moro 5, I‐00185 Roma, Italy;
262.
1985

Grioni M.; Joyce J. J.; Weaver J. H.

Adatom aggregation, reaction, and chemical trapping at the Sm/GaAs(110) interface
Phys. Rev. B 32, 962 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
263.
1985

Chambers S. A.; Anderson S. B.; Weaver J. H.

Atomic structure of the Cu/Si(111) interface by high‐energy core‐level Auger electron diffraction
Phys. Rev. B 32, 581 (1985)
Department of Chemistry, Bethel College, St. Paul, Minnesota 55112
264.
1985

Ruckman M. W.; del Giudice M.; Weaver J. H.

Temperature‐dependent growth morphology of a semiconductor‐metal interface; Ge/Ta(110)
Phys. Rev. B 32, 1077 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
265.
1985

Fujimori Atsushi; Grioni M.; Joyce J. J.; Weaver J. H.

4f photoemission from Ce clusters and disordered reaction products at Ce/Si and Ce/GaAs interfaces
Phys. Rev. B 31, 8291 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
266.
1985

Fujimori Atsushi; Weaver J. H.

Decay channels of the 5d→;5f excitation in thorium
Phys. Rev. B 31, 6411 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
267.
1985

Chambers S. A.; Howell G. A.; Greenlee T. R.; Weaver J. H.

Characterization of intermixing at metal‐semiconductor interfaces by angle‐resolved Auger‐electron emission; Cu/Si(111)-7×7
Phys. Rev. B 31, 6402 (1985)
Department of Chemistry, Bethel College, St. Paul, Minnesota 55112
268.
1985

Fujimori Atsushi; Weaver J. H.

Valence fluctuation and electron spectroscopies in CeN: 4f‐ligand versus 4;f–;conduction‐band hybridization
Phys. Rev. B 31, 6345 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
269.
1985

Grioni M.; Joyce J. J.; Weaver J. H.

Reaction at a refractory metal/semiconductor interface: V/GaAs(110)
J. Vac. Sci. Technol. A 3, 918 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
270.
1985

Grioni M.; del Giudice M.; Joyce J. J.; Weaver J. H.

Modeling of interface reaction products with high‐resolution core‐level photoemission
J. Vac. Sci. Technol. A 3, 907 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
271.
1985

O'Neill D. G.; Joyce J. J.; Capehart T. W.; Weaver J. H.

Summary Abstract: Evolution of the bulk electronic structure of Ag on Pd(100)
J. Vac. Sci. Technol. A 3, 1639 (1985)
University of Wisconsin, Madison, Wisconsin 53706
272.
1985

Chambers S. A.; Greenlee T. R.; Howell G. A.; Weaver J. H.

Quantitative interdiffusion studies of noble metal/Si(111)‐7×7 interfaces by angle‐resolved Auger electron emission
J. Vac. Sci. Technol. A 3, 1291 (1985)
Departments of Chemistry and Physics, Bethel College, St. Paul, Minnesota 55112
273.
1985

Weaver J. H.; Grioni M.; Joyce J.

Critical development stages for the reactive Cr‐GaAs(110) interface
Phys. Rev. B 31, 5348 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
274.
1985

Weaver J. H.; Grioni M.; Joyce J. J.; del Giudice M.

Reactions at a rare‐earth;–;GaAs interface; Ce/GaAs(110)
Phys. Rev. B 31, 5290 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
275.
1985

Franciosi A.; Weaver J. H.; Peterson D. T.

Silicon interaction with low‐electronegativity metals; Interdiffusion and reaction at the Ca/Si(111) interface
Phys. Rev. B 31, 3606 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
276.
1985

Fujimori Atsushi; Weaver J. H.; Franciosi A.

Core‐hole screening and plasmon satellites in calcium
Phys. Rev. B 31, 3549 (1985)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
277.
1984

Grioni M.; Joyce J.; del Giudice M.; O'Neill D. G.; Weaver J. H.

Modeling a heterogeneous metal/semiconductor interface: Ce on Si(111)
Phys. Rev. B 30, 7370 (1984)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
278.
1984

Grioni M.; Joyce J.; Chambers S. A.; O'Neill D. G.; del Giudice M.; Weaver J. H.

Cluster‐induced reactions at a metal‐semiconductor interface; Ce on Si(111)
Phys. Rev. Lett. 53, 2331 (1984)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
279.
1984

Franciosi A.; Perfetti P.; Katnani A. D.; Weaver J. H.; Margaritondo G.

Samarium chemisorption on group‐IV semiconductors
Phys. Rev. B 29, 5611 (1984)
Department of Chemical Engineering and Material Science, University of Minnesota, Minneapolis, Minnesota 55455
280.
1984

Weaver J. H.; Franciosi A.; Moruzzi V. L.

Bonding in metal disilicides CaSi2 through NiSi2: Experiment and theory
Phys. Rev. B 29, 3293 (1984)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
281.
1983

Franciosi A.; Weaver J. H.; O'Neill D. G.; Schmidt F. A.; Bisi O.; Calandra C.

Electronic structure of Cr silicides and Si‐Cr interface reactions
Phys. Rev. B 28, 7000 (1983)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
282.
1983

Franciosi A.; Weaver J. H.; O'Neill D. G.

An Interface catalytic effect: Cr at the Si(111)‐Au interface
Phys. Rev. B 28, 4889 (1983)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
283.
1983

Butera R. A.; Franciosi A.; Peterman D. J.; Weaver J. H.; Peterson D. T.

Hydrogen diffusion and hydride formation at the metal–hydride interface
J. Chem. Phys. 79, 2395 (1983)
Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
284.
1983

Franciosi A.; O'Neill D. G.; Weaver J. H.

Modulation of atomic interdiffusion at the Si(111)–Au interface
J. Vac. Sci. Technol. B 1, 524 (1983)
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
285.
1983

Piancastelli M. N.; Cerrina F.; Margaritondo G.; Franciosi A.; Weaver J. H.

Strongly bound chemisorption state for benzene on silicon (111)
Appl. Phys. Lett. 42, 990 (1983)
Department of Chemistry, University of Wisconsin, Madison, Wisconsin 53706
286.
1983

Franciosi A.; Weaver J. H.

Bulk silicides and Si‐metal interface reaction; Pd;2Si
Phys. Rev. B 27, 3554 (1983)
Synchrotron Radiation Center, University of Wisconsin, Stoughton, Wisconsin 53589 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
287.
1983

Peterman D. J.; Weaver J. H.; Croft M.; Peterson D. T.

Ce4f electron in CeH2.1, CeH2.4, CeAl2, CePd3, CeRh3, and CeRu2: A photoemission study using synchrotron radiation
Phys. Rev. B 27, 808 (1983)
Synchrotron Radiation Center, University of Wisconsin–Madison, Stoughton, Wisconsin 53589;
288.
1983

Peterman D. J.; Misemer D. K.; Weaver J. H.; Peterson D. T.

Electronic structure of metal hydrides. VI. Photoemission studies and band theory of VH, NbH, and TaH
Phys. Rev. B 27, 799 (1983)
Synchrotron Radiation Center, University of Wisconsin–Madison, Stoughton, Wisconsin 53589;
289.
1982

Wieliczka D.; Weaver J. H.; Lynch D. W.; Olson C. G.

Photoemission studies of the γ‐α phase transition in Ce; Changes in 4;f character
Phys. Rev. B 26, 7056 (1982)
Ames Laboratory and Department of Physics, Iowa State University, Ames, Iowa 50011
290.
1982

Chabal Y. J.; Rowe J. E.; Poate J. M.; Franciosi A.; Weaver J. H.

Stoichiometry and structural disorder effects on the electronic structure of Ni and Pd silicides
Phys. Rev. B 26, 2748 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
291.
1982

Franciosi A.; Weaver J. H.; Schmidt F. A.

Electronic structure of nickel silicides Ni2Si, NiSi, and NiSi2
Phys. Rev. B 26, 546 (1982)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
292.
1982

Franciosi A.; Weaver J. H.; O'Neill D. G.; Chabal Y.; Rowe J. E.; Poate J. M.; Bisi O.; Calandra C.

Chemical bonding at the Si–metal interface; Si–Ni and Si–Cr
J. Vac. Sci. Technol. 21, 624 (1982)
Synchrotron Radiation Center, University of Wisconsin‐Madison,Stoughton, Wisconsin 53589;
293.
1982

Peterman D. J.; Weaver J. H.; Croft M.

Photoemission studies of mixed valency: Ce(Ag0.3Pd0.7)3, CePd3, and CeRh3
Phys. Rev. B 25, 5530 (1982)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
294.
1982

Franciosi A.; Peterman D. J.; Weaver J. H.; Moruzzi V. L.

Structural morphology and electronic properties of the Si‐Cr interface
Phys. Rev. B 25, 4981 (1982)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
295.
1981

Franciosi A.; Mårtensson Nils; Weaver J. H.; Croft M.

Evidence of 4f photoemission satellites in cerium compounds
Phys. Rev. B 24, 3651 (1981)
Synchrotron Radiation Center, University of Wisconsin, Stoughton, Wisconsin 53589
296.
1981

Mason M. G.; Lee S.-T.; Apai G.; Franciosi A.; Shirley D. A.; Davis R. F.; Weaver J. H.

Particle‐size‐induced valence changes in samarium clusters
Phys. Rev. Lett. 47, 730 (1981)
Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
297.
1981

Franciosi A.; Peterman D. J.; Weaver J. H.

Silicon–refractory metal interfaces; Evidence of room‐temperature intermixing for Si–Cr
J. Vac. Sci. Technol. 19, 657 (1981)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
298.
1981

Croft M.; Weaver J. H.; Franciosi A.; Jayaraman A.

Resonant photoemission in CeS and CeP
Phys. Rev. B 24, 544 (1981)
Serin Physics Laboratory, Rutgers University, Piscataway, New Jersey 08854
299.
1981

Croft M.; Weaver J. H.; Peterman D. J.; Franciosi A.

Fundamental parameters and mechanisms in the Ce problem: Photoemission results on CeAl2 and CeAl2 alloys
Phys. Rev. Lett. 46, 1104 (1981)
Serin Physics Laboratory, Rutgers University, Piscataway, New Jersey 08854
300.
1981

Peterman D. J.; Weaver J. H.; Peterson D. T.

Electronic structure of metal hydrides. V. x‐dependent properties of LaH;x (1.9?;x?2.9) and NdH;x (2.01?;x?2.27)
Phys. Rev. B 23, 3903 (1981)
Ames Laboratory‐U.S. Department of Energy and Department of Physics, Iowa State University, Ames, Iowa 50011;
301.
1981

Margaritondo G.; Stoffel N. G.; Lévy F.; Weaver J. H.; Bertoni C. M.; Katnani A. D.

Density‐of‐states changes near the Fermi level and the lattice instability in TiSe;2
Phys. Rev. B 23, 3765 (1981)
Department of Physics, University of Wisconsin, Madison, Wisconsin 53706
302.
1981

Weaver J. H.; Moruzzi V. L.; Schmidt F. A.

Experimental and theoretical band‐structure studies of refractory metal silicides
Phys. Rev. B 23, 2916 (1981)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
303.
1981

Weaver J. H.; Peterman D. J.; Peterson D. T.; Franciosi A.

Electronic structure of metal hydrides. IV. TiHx, ZrHx, HfHx, and the fcc‐fct lattice distortion
Phys. Rev. B 23, 1692 (1981)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
304.
1980

Weaver J. H.; Bradshaw A. M.; van der Veen J. F.; Himpsel F. J.; Eastman D. E.; Politis C.

Angle‐resolved photoemission studies of TiC (111) and TiC (100)
Phys. Rev. B 22, 4921 (1980)
Synchrotron Radiation Center, University of Wisconsin at Madison, Stoughton, Wisconsin 53589
305.
1980

Weaver J. H.; Franciosi A.; Wallace W. E.; Smith H. Kevin

Electronic structure and surface oxidation of LaNi5, Er6Mn23, and related systems
J. Appl. Phys. 51, 5847 (1980)
Synchrotron Radiation Center, University of Wisconsin‐Madison, Stoughton, Wisconsin 53589;
306.
1980

Lynch D. W.; Olson C. G.; Peterman D. J.; Weaver J. H.

Optical properties of TiCx (0.64?;x?0.90) from 0.1 to 30 eV
Phys. Rev. B 22, 3991 (1980)
Ames Laboratory, U.S. Department of Energy and Department of Physics, Iowa State University, Ames, Iowa 50011
307.
1980

Weaver J. H.; Peterson D. T.

Photoelectron spectroscopy study of the bulk band structure of FeTi
Phys. Rev. B 22, 3624 (1980)
Synchrotron Radiation Center, University of Wisconsin at Madison, Stoughton, Wisconsin 53589
308.
1980

Rosei R.; Colavita E.; Franciosi A.; Weaver J. H.; Peterson D. T.

Electronic structure of the bcc transition metals: Thermoreflectance studies of bulk V, Nb, Ta, and αTaH;x
Phys. Rev. B 21, 3152 (1980)
Ames Laboratory, USDOE, Ames, Iowa 50010
309.
1980

Dietz R. E.; McRae E. G.; Weaver J. H.

Core‐electron excitation edges in metallic Ni, Cu, Pt, and Au
Phys. Rev. B 21, 2229 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974

Co-authors

Co-publications
23

Franciosi, Alfonso
19

Poirier, Derrick
15

Smalley, Richard E.
10

Boscherini, Federico
8

Fujimori, Atsushi
7

Aldao, CM
6

Martins, José Luı´s
5

Nakayama, Koji
5

Margaritondo, Giorgio
4

Olson, CG
3

Palmstrøm, Chris J.
3

Lynch, David W.
3

Lévy, F
3

Arko, Al
2

Chabal, Yves J.