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Wang, WI

Computed

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Research Profile

Latest Publications

1.
2007

Li W.; Pei C.; Torfi A.; Moscicka D.; Wang W. I.

Interface and optical properties of InGaAsNSb/;GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 1533 (2007)
Department of Electrical Engineering, Columbia University, New York, New York 10027
2.
2007

Li W.; Moscicka D.; Torfi A.; Wang W. I.

Molecular-beam epitaxy of phosphor-free 1.3 μ;m InAlGaAs multiple-quantum-well lasers on InP (100)
J. Vac. Sci. Technol. B 25, 1090 (2007)
Department of Electrical Engineering, Columbia University, New York, New York 10027
3.
2007

Li W.; Torfi A.; Moscicka D.; Shao H.; Wang W. I.

Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers
J. Vac. Sci. Technol. B 25, 1083 (2007)
Department of Electrical Engineering, Columbia University, New York, New York 10027

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All Publications

1.
2007

Li W.; Pei C.; Torfi A.; Moscicka D.; Wang W. I.

Interface and optical properties of InGaAsNSb/;GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 1533 (2007)
Department of Electrical Engineering, Columbia University, New York, New York 10027
2.
2007

Li W.; Moscicka D.; Torfi A.; Wang W. I.

Molecular-beam epitaxy of phosphor-free 1.3 μ;m InAlGaAs multiple-quantum-well lasers on InP (100)
J. Vac. Sci. Technol. B 25, 1090 (2007)
Department of Electrical Engineering, Columbia University, New York, New York 10027
3.
2007

Li W.; Torfi A.; Moscicka D.; Shao H.; Wang W. I.

Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers
J. Vac. Sci. Technol. B 25, 1083 (2007)
Department of Electrical Engineering, Columbia University, New York, New York 10027
4.
2006

Shao H.; Li W.; Torfi A.; Moscicka D.; Wang W. I.

Type-II InAs/;GaSb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications
J. Vac. Sci. Technol. B 24, 2144 (2006)
Department of Electrical Engineering, Columbia University, New York, New York 10027
5.
2006

Chen Y. Q.; Unuvar T.; Moscicka D.; Wang W. I.

Hydrogen-plasma assisted molecular beam epitaxial growth of high-purity InAs
J. Vac. Sci. Technol. B 24, 1599 (2006)
Department of Electrical Engineering, Columbia University, New York, New York 10027
6.
2005

Li W.; Héroux J. B.; Shao H.; Wang W. I.; Vurgaftman I.; Meyer J. R.

Midinfrared InAs/;InGaSb “W” diode lasers with digitally grown tensile-strained AlGaAsSb barriers
J. Vac. Sci. Technol. B 23, 1136 (2005)
Department of Electrical Engineering, Columbia University, 500 West 120th Street, Mudd Room 1312, New York, New York 10027
7.
2004

Héroux J. B.; Pei C. W.; Wang W. I.

Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering
J. Vac. Sci. Technol. B 22, 2240 (2004)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
8.
2004

Pei C. W.; Héroux J. B.; Wang W. I.

Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates
J. Vac. Sci. Technol. B 22, 1460 (2004)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
9.
2004

Li W.; Héroux J. B.; Shao H.; Wang W. I.

Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
Appl. Phys. Lett. 84, 2016 (2004)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
10.
2003

Li W.; Héroux J. B.; Wang W. I.

InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
J. Appl. Phys. 94, 4248 (2003)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
11.
2002

Héroux J. B.; Yang X.; Wang W. I.

Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells
J. Appl. Phys. 92, 4361 (2002)
Department of Electrical Engineering, Columbia University, New York, New York 10027
12.
2002

Pei C. W.; Chen J.; Wang W. I.; Sweet J.; Héroux J. B.; Chang M. F.

High quality GaAs grown on Si-on-insulator compliant substrates
J. Vac. Sci. Technol. B 20, 1196 (2002)
Department of Electrical Engineering, Columbia University, New York, New York 10027
13.
2002

Héroux J. B.; Yang X.; Wang W. I.

Optical characterization of strained InGaAsN/GaAs multiple quantum wells
J. Vac. Sci. Technol. B 20, 1154 (2002)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
14.
2001

Pei C. W.; Wang W. I.; Turk B.; Kuan T. S.

Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates
J. Appl. Phys. 90, 5959 (2001)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
15.
2001

Pei C. W.; Turk B.; Héroux J. B.; Wang W. I.

GaN grown by molecular beam epitaxy with antimony as surfactant
J. Vac. Sci. Technol. B 19, 1426 (2001)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
16.
2001

Yang X.; Héroux J. B.; Mei L. F.; Wang W. I.

InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy
Appl. Phys. Lett. 78, 4068 (2001)
Columbia University, New York, New York 10027;
17.
2000

Yang X.; Heroux J. B.; Jurkovic M. J.; Wang W. I.

High performance 1.3 μm InGaAsN;Sb/GaAs quantum well lasers grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 18, 1484 (2000)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
18.
2000

Li L. K.; Stormer H. L.; Simonian D.; Syed S.; Wang W. I.; Turk B.; Lang D. V.

Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures
J. Vac. Sci. Technol. B 18, 1472 (2000)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
19.
2000

Li L. K.; Jurkovic M. J.; Wang W. I.; Van Hove J. M.; Chow P. P.

Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
Appl. Phys. Lett. 76, 1740 (2000)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
20.
2000

Yang X.; Heroux J. B.; Jurkovic M. J.; Wang W. I.

High-temperature characteristics of 1.3 μm InGaAsN;Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
Appl. Phys. Lett. 76, 795 (2000)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
21.
2000

Li L. K.; Turk B.; Wang W. I.; Syed S.; Simonian D.; Stormer H. L.

High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy
Appl. Phys. Lett. 76, 742 (2000)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
22.
1999

Hang D. R.; Chen Y. F.; Fang F. F.; Wang W. I.

Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
Phys. Rev. B 60, 13318 (1999)
Department of Physics, National Taiwan University, Taipei, Taiwan, 106 Republic of China;
23.
1999

Héroux J. B.; Yang X.; Wang W. I.

GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
Appl. Phys. Lett. 75, 2716 (1999)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
24.
1999

Yang X.; Jurkovic M. J.; Heroux J. B.; Wang W. I.

Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
Appl. Phys. Lett. 75, 178 (1999)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
25.
1999

Yang X.; Heroux J. B.; Jurkovic M. J.; Wang W. I.

Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 17, 1144 (1999)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
26.
1998

Yang Z.; Alperin J.; Wang W. I.; Iyer S. S.; Kuan T. S.; Semendy F.

In situ relaxed Si1-x;Gex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
J. Vac. Sci. Technol. B 16, 1489 (1998)
Electrical Engineering Department, Columbia University, New York, New York 10027;
27.
1998

Jurkovic M. J.; Alperin J.; Du Q.; Wang W. I.; Chang M. F.

AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy
J. Vac. Sci. Technol. B 16, 1401 (1998)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
28.
1998

Li L. K.; Alperin J.; Wang W. I.; Look D. C.; Reynolds D. C.

High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy
J. Vac. Sci. Technol. B 16, 1275 (1998)
Department of Electrical Engineering, Columbia University, New York, New York 10027;
29.
1997

Yang Z.; Li L. K.; Alperin J.; Wang W. I.

Nitrogen Vacancy as the Donor: Experimental Evidence in the Ammonia‐Assisted Molecular Beam Epitaxy of GaN
J. Electrochem. Soc. 144, 3474 (1997)
Department of Electrical Engineering, Columbia University, New York, New York 10027
30.
1997

Sengupta D. K.; Fang W.; Malin J. I.; Li J.; Horton T.; Curtis A. P.; Hsieh K. C.; Chuang S. L.; Chen H.; Feng M.; Stillman G. E.; Li L.; Liu H. C.; Bandara K. M. S. V.; Gunapala S. D.; Wang W. I.

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
Appl. Phys. Lett. 71, 78 (1997)
Department of Electrical and Computer Engineering and Department of Materials Science and Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
31.
1997

Zhao Y.; Jurkovic M. J.; Wang W. I.

Characterization of AuGe‐ and AuTe‐Based Ohmic Contacts on InAs n‐Channel High Electron Mobility Transistors
J. Electrochem. Soc. 144, 1067 (1997)
Department of Electrical Engineering, Columbia University, New York, New York 10027
32.
1996

Yang Z.; Li L. K.; Wang W. I.

High‐quality GaN and AlN grown by gas‐source molecular beam epitaxy using ammonia as the nitrogen source
J. Vac. Sci. Technol. B 14, 2354 (1996)
Department of Electrical Engineering, Columbia University, New York, New York 10027
33.
1996

Du Q.; Alperin J.; Wang W. I.

Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 14, 2343 (1996)
Department of Electrical Engineering, Columbia University, New York, New York 10027
34.
1996

Hsu Y.; Wang W. I.; Kuan T. S.

Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substrates
J. Vac. Sci. Technol. B 14, 2286 (1996)
Department of Electrical Engineering, Columbia University, New York, New York 10027
35.
1996

Ram-Mohan L. R.; Meyer J. R.; Xie H.; Wang W. I.

Response to ‘‘Comment on ‘Normal incidence second‐harmonic generation in ;L‐valley AlSb/GaSb/Ga;1-;xAlxSb/AlSb stepped quantum wells’ ’’ [Appl. Phys. Lett. ;68, 1872 (1996)]
Appl. Phys. Lett. 68, 1873 (1996)
Worcester Polytechnic Institute, Worcester, Massachusetts 01609
36.
1995

Du Q.; Alperin J.; Wang W. I.

Infrared electroabsorption modulation in AlSb/InAs/AlGaSb/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy
Appl. Phys. Lett. 67, 2218 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
37.
1995

Yang Z.; Li L. K.; Wang W. I.

GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
Appl. Phys. Lett. 67, 1686 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
38.
1995

Jimenez J. L.; Mendez E. E.; Li X.; Wang W. I.

Intrinsic bistability by charge accumulation in an L‐valley state in GaSb‐AlSb resonant‐tunneling diodes
Phys. Rev. B 52, R5495 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
39.
1995

Tao I. W.; Wang Y.; Jurkovic M.; Wang W. I.

ZnMgSeS/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A orientation
J. Appl. Phys. 78, 2851 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
40.
1995

Shih M. C.; Hu M. H.; Freiler M. B.; Levy M.; Scarmozzino R.; Osgood R. M.; Tao I. W.; Wang W. I.

Fabrication of an InGaAs single quantum well circular ring laser by direct laser patterning
Appl. Phys. Lett. 66, 2608 (1995)
Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
41.
1995

Jimenez J. L.; Mendez E. E.; Li X.; Wang W. I.

Resonant tunneling of L‐valley electrons in GaSb‐based double‐barrier heterostructures
Phys. Rev. B 51, 7938 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
42.
1995

Yang Z.; Guarin F.; Tao I. W.; Wang W. I.; Iyer S. S.

Approach to obtain high quality GaN on Si and SiC‐on‐silicon‐on‐insulator compliant substrate by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 13, 789 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
43.
1995

Tao I. W.; Wang Y.; Jurkovic M.; Wang W. I.

ZnMgSSe/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A
J. Vac. Sci. Technol. B 13, 731 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
44.
1995

Du Q.; Wang W. I.

AlAsSb/InAsSb heterojunction diodes grown on Si by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 13, 709 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
45.
1994

Xie H.; Wang W. I.; Meyer J. R.; Ram-Mohan L. R.

Normal incidence second‐harmonic generation in ;L‐valley AlSb/GaSb/Ga;1-;xAlxSb/AlSb stepped quantum wells
Appl. Phys. Lett. 65, 2048 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
46.
1994

Hsu Y.; Wang W. I.; Kuan T. S.

Molecular‐beam epitaxial GaAs/AlAs superlattices in the (311) orientation
Phys. Rev. B 50, 4973 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
47.
1994

Hsu Y.; Wang W. I.; Kuan T. S.

Molecular beam epitaxial heterostructures in the (311)A orientation
J. Vac. Sci. Technol. B 12, 2584 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
48.
1994

Xie H.; Wang W. I.; Meyer J. R.

Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells
J. Appl. Phys. 76, 92 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
49.
1994

Jimenez J. L.; Li X.; Wang W. I.

Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures
Appl. Phys. Lett. 64, 2127 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
50.
1994

Tao I. W.; Jurkovic M.; Wang W. I.

Doping of ZnTe by molecular beam epitaxy
Appl. Phys. Lett. 64, 1848 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
51.
1994

Zhang Y.; Baruch N.; Wang W. I.

AlAs/AlGaAs X‐valley quantum‐well normal‐incidence infrared detectors on Si substrates
J. Appl. Phys. 75, 3690 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
52.
1994

Wang Y.; Huang C. I.; Cheney M. E.; Wang W. I.; Baruch N.; Scherer R. L.

AlGaAs/Ge/GaAs heterostructures grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 12, 1300 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
53.
1994

Li L. K.; Wang W. I.; Gaines J. M.; Petruzzello J.; Marshall T.

Some doping results in ZnSe grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 12, 1197 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
54.
1994

Li L. K.; Wang Y.; Jurkovic M.; Wang W. I.

Molecular beam epitaxial growth of single domain ZnSe on Ge
J. Appl. Phys. 75, 2026 (1994)
Department of Electrical Engineering, Columbia University, New York, New York 10027
55.
1993

Wang Y.; Yang E. S.; Wang W. I.

High gain and wide dynamic range punchthrough heterojunction phototransistors
J. Appl. Phys. 74, 6978 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
56.
1993

Zhang Y.; Baruch N.; Wang W. I.

Normal incidence infrared photodetectors using intersubband transitions in GaSb L‐valley quantum wells
Appl. Phys. Lett. 63, 1068 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
57.
1993

Xie H.; Wang W. I.; Meyer J. R.; Hoffman C. A.; Bartoli F. J.

Normal‐incidence electroabsorption in Ga;1-x;AlxSb/AlSb L‐valley quantum wells for 3–5 μm optical modulation
J. Appl. Phys. 74, 2810 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
58.
1993

Xie H.; Wang W. I.

Normal incidence infrared modulator using direct–indirect transitions in GaSb quantum wells
Appl. Phys. Lett. 63, 776 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
59.
1993

Xie X.; Wang W. I.

Dependence of valence‐subband structures on the substrate orientation in ZnS;xSe1-;x/ZnyMg1-;ySzSe1-;z quantum wells
J. Appl. Phys. 74, 1822 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
60.
1993

Hoffman C. A.; Meyer J. R.; Bartoli F. J.; Wang W. I.

Shubnikov–de Haas and Hall oscillations in InAs‐Ga;1-;xInxSb superlattices
Phys. Rev. B 48, 1959 (1993)
Naval Research Laboratory, Washington, D.C. 20375‐5320;
61.
1993

Xie H.; Wang W. I.; Meyer J. R.; Hoffman C. A.; Bartoli F. J.

Enhancement of intersubband Stark effects in L‐valley step quantum wells for infrared modulation and voltage tunable detection
J. Appl. Phys. 74, 1195 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
62.
1993

Zhang Y.; Katz J.; Wang W. I.

Orientation dependence of normal incidence absorption in ellipsoidal‐valley quantum wells
J. Vac. Sci. Technol. B 11, 1681 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
63.
1993

Mendez E. E.; Nocera J.; Wang W. I.

Oscillatory Landé factor of two‐dimensional electrons under high magnetic fields
Phys. Rev. B 47, 13937 (1993)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
64.
1993

Li X.; Cho A. Y.; Wang W. I.; Sivco D. L.

Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 11, 912 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
65.
1993

Li L. K.; Hsu Y.; Wang W. I.

Molecular‐beam epitaxial growth of InSb on GaAs and Si for infrared detector applications
J. Vac. Sci. Technol. B 11, 872 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
66.
1993

Katz J.; Zhang Y.; Wang W. I.

Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band
Appl. Phys. Lett. 62, 609 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
67.
1992

Xie H.; Katz J.; Wang W. I.

Growth orientation dependence of normal incidence absorption in ellipsoidal‐valley quantum wells
Appl. Phys. Lett. 61, 2694 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
68.
1992

Viña L.; Muñoz L.; Calle F.; Calleja J. M.; Mestres N.; Wang W. I.

Excitonic spectrum of [111] GaAs/Ga;xAl1-;xAs quantum wells
Phys. Rev. B 46, 13234 (1992)
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Madrid, Spain;
69.
1992

Lu Z.; Jiang Y.; Wang W. I.; Teich M. C.; Osgood R. M.

Erratum: ‘‘GaSb‐oxide removal and surface passivation using an electron cyclotron resonance hydrogen source’’ [J. Vac. Sci. Technol. B ;10, 1856 (1992)]
J. Vac. Sci. Technol. B 10, 2496 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
70.
1992

Xie H.; Katz J.; Wang W. I.

Orientation dependence of intersubband absorption in AlAs/Ga1-;xAlxAs X valley superlattices
J. Appl. Phys. 72, 3681 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
71.
1992

Katz Jennifer; Zhang Y.; Wang W. I.

Normal incidence infrared absorption in AlAs/AlGaAs x‐valley multiquantum wells
Appl. Phys. Lett. 61, 1697 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
72.
1992

Lu Z.; Jiang Y.; Wang W. I.; Teich M. C.; Osgood R. M.

GaSb‐oxide removal and surface passivation using an electron cyclotron resonance hydrogen source
J. Vac. Sci. Technol. B 10, 1856 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
73.
1992

Brozak G.; Gammon D.; Shanabrook B. V.; Beresford R.; Broido D. A.; Wang W. I.

Effects of nonparabolicity on collective intersubband excitations
Phys. Rev. B 45, 11399 (1992)
Naval Research Laboratory, Washington, D.C. 20375
74.
1992

Jiang Y.; Teich M. C.; Wang W. I.; Meyer J. R.

Auger recombination in HgCdTe quantum wires and quantum boxes
J. Appl. Phys. 71, 3394 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
75.
1992

Li X.; Longenbach K. F.; Wang W. I.

Observation of piezoelectric field induced carriers in AlGaAs/InGaAs strained‐layer heterostructures
Appl. Phys. Lett. 60, 1513 (1992)
Department of Electrical Engineering, Columbia University, New York 10027
76.
1992

Xie H.; Katz J.; Wang W. I.; Chang Y. C.

Normal incidence infrared photoabsorption in p‐type GaSb/Ga;xAl1-;xSb quantum wells
J. Appl. Phys. 71, 2844 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
77.
1992

Tao I. W.; Schwartz C.; Wang W. I.

Improvement of the threshold current of AlGaAs/GaAs single quantum well lasers by substrate tilting
J. Vac. Sci. Technol. B 10, 838 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
78.
1992

Mendez E. E.; Nocera J.; Wang W. I.

Conservation of momentum, and its consequences, in interband resonant tunneling
Phys. Rev. B 45, 3910 (1992)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
79.
1992

Jiang Y.; Teich M. C.; Wang W. I.

Enhanced exciton absorption and saturation limit in strained InGaAs/InP quantum wells
J. Appl. Phys. 71, 769 (1992)
Department of Electrical Engineering, Columbia University, New York, New York 10027
80.
1991

Xie H.; Katz J.; Wang W. I.

Infrared absorption enhancement in light‐ and heavy‐hole inverted Ga;1-;xInxAs/Al1-;yInyAs quantum wells
Appl. Phys. Lett. 59, 3601 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
81.
1991

Xu L.; Zhang X. -C.; Auston D. H.; Wang W. I.

Internal piezoelectric fields in GaInSb/InAs strained‐layer superlattices probed by optically induced microwave radiation
Appl. Phys. Lett. 59, 3562 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
82.
1991

Kim M. H.; Plano M. A.; Haase M. A.; Stillman G. E.; Wang W. I.

Photo‐Hall studies of high‐purity GaAs
J. Appl. Phys. 70, 7425 (1991)
Bandgap Technology Corporation, Broomfield, Colorado 80021
83.
1991

Wang Q.; Wang Y.; Longenbach K. F.; Yang E. S.; Wang W. I.

AlGaAs/GaAs heterojunction bipolar transistor with a two‐dimensional electron gas emitter
Appl. Phys. Lett. 59, 2582 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
84.
1991

Longenbach K. F.; Wang W. I.

Molecular beam epitaxy of GaSb
Appl. Phys. Lett. 59, 2427 (1991)
Department of Electrical Engineering, Columbia University, New York 10027
85.
1991

Xie H.; Piao J.; Katz J.; Wang W. I.

Intersubband absorption in Ga1-;xAlxSb/AlSb superlattices for infrared detection
J. Appl. Phys. 70, 3152 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
86.
1991

Longenbach K. F.; Wang W. I.

AlGaSb/GaSb diodes grown by molecular‐beam epitaxy
Appl. Phys. Lett. 59, 1117 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
87.
1991

Longenbach K. F.; Wang Y.; Wang W. I.

Two‐dimensional electron gas modulated resonant tunneling transistor
Appl. Phys. Lett. 59, 967 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
88.
1991

Longenbach K. F.; Xin S.; Schwartz C.; Jiang Y.; Wang W. I.

Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperature
Appl. Phys. Lett. 59, 820 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
89.
1991

Jiang Y.; Teich M. C.; Wang W. I.

Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi‐quantum‐well lasers
J. Appl. Phys. 69, 6869 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
90.
1991

Longenbach K. F.; Xin S.; Wang W. I.

p‐type doping of GaSb by Ge and Sn grown by molecular beam epitaxy
J. Appl. Phys. 69, 3393 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
91.
1991

Mendez E. E.; Ohno H.; Esaki L.; Wang W. I.

Resonant interband tunneling via Landau levels in polytype heterostructures
Phys. Rev. B 43, 5196 (1991)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
92.
1991

Jiang Y.; Teich M. C.; Wang W. I.

The Auger recombination rate is larger in a GaSb quantum well than in bulk GaSb
J. Appl. Phys. 69, 836 (1991)
Department of Electrical Engineering, Columbia University, New York, New York 10027
93.
1990

Jiang Y.; Teich M. C.; Wang W. I.

Forbidden Auger process in strained InGaSb/AlGaSb quantum wells
Appl. Phys. Lett. 57, 2922 (1990)
Department of Electrical Engineering, Columbia University, New York, New York 10027
94.
1990

Longenbach K. F.; Luo L. F.; Wang W. I.

Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
Appl. Phys. Lett. 57, 1554 (1990)
Department of Electrical Engineering, Columbia University, New York, New York 10027
95.
1990

Luo L. F.; Beresford R.; Longenbach K. F.; Wang W. I.

Resonant interband coupling in single‐barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
J. Appl. Phys. 68, 2854 (1990)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
96.
1990

Treyz G. V.; May P. G.; LaTulipe D.; Basu S.; Wang W. I.

GaAs multiple quantum well waveguide modulators on silicon substrates
Appl. Phys. Lett. 57, 1078 (1990)
IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598
97.
1990

Via L.; Bauer G. E. W.; Potemski M.; Maan J. C.; Mendez E. E.; Wang W. I.

Term spectrum of magnetoexcitons in quasi‐two‐dimensional systems
Phys. Rev. B 41, 10767 (1990)
Instituto de Ciencia de Materiales de Madrid del Consejo Superior de Investigaciones Científicas y Departamento de Física Aplicada (C‐IV), Universidad Autónoma, de Madrid, Ciudad Universitaria de Canto Blanco, E‐28049 Madrid, Spain;
98.
1990

Ohno H.; Mendez E. E.; Wang W. I.

Effects of carrier mass differences on the current‐voltage characteristics of resonant tunneling structures
Appl. Phys. Lett. 56, 1793 (1990)
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
99.
1990

Beresford R.; Luo L. F.; Longenbach K. F.; Wang W. I.

Interband tunneling in single‐barrier InAs/AlSb/GaSb heterostructures
Appl. Phys. Lett. 56, 952 (1990)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
100.
1990

Piao J.; Beresford R.; Wang W. I.

Surface structures of the (Al,Ga)Sb system
J. Vac. Sci. Technol. B 8, 276 (1990)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
101.
1990

Piao J.; Wang W. I.; Licata T.; Beresford R.; Homma H.

Molecular‐beam epitaxial growth of metastable Ge;1-;xSnx alloys
J. Vac. Sci. Technol. B 8, 221 (1990)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
102.
1990

Jiang Y.; Teich M. C.; Wang W. I.

Hole impact ionization enhancement in AlxGa1-;xSb
J. Appl. Phys. 67, 2488 (1990)
Center for Telecommunications Research, Department of Electrical Engineering, Columbia University, New York, New York 10027
103.
1990

Beresford R.; Luo L. F.; Longenbach K. F.; Wang W. I.

Resonant interband tunneling through a 110 nm InAs quantum well
Appl. Phys. Lett. 56, 551 (1990)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
104.
1990

Lee B.; Bose S. S.; Kim M. H.; Stillman G. E.; Wang W. I.

Influence of the substrate orientation on Ge incorporation in molecular‐beam epitaxial GaAs
J. Appl. Phys. 67, 255 (1990)
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory and Material Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801;
105.
1990

Hansen W.; Smith T. P.; Piao J.; Beresford R.; Wang W. I.

Magnetoresistance measurements of doping symmetry and strain effects in GaSb‐AlSb quantum wells
Appl. Phys. Lett. 56, 81 (1990)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
106.
1989

Luo L. F.; Beresford R.; Wang W. I.

Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
Appl. Phys. Lett. 55, 2023 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
107.
1989

Beresford R.; Luo L. F.; Wang W. I.; Mendez E. E.

Resonant tunneling through X‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures
Appl. Phys. Lett. 55, 1555 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
108.
1989

Lau K. Y.; Xin S.; Wang W. I.; Bar-Chaim N.; Mittelstein M.

Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers
Appl. Phys. Lett. 55, 1173 (1989)
Columbia University, Department of Electrical Engineering, New York, New York 10027
109.
1989

Luo L. F.; Beresford R.; Wang W. I.; Munekata H.

Heterojunction field‐effect transistors based on AlGaSb/InAs
Appl. Phys. Lett. 55, 789 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
110.
1989

Beresford R.; Luo L. F.; Wang W. I.

Resonant tunneling of holes in AlSb/GaSb/AlSb double‐barrier heterostructures
Appl. Phys. Lett. 55, 694 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York, 10027
111.
1989

Luo L. F.; Beresford R.; Wang W. I.; Mendez E. E.

Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double‐barrier heterostructures
Appl. Phys. Lett. 54, 2133 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
112.
1989

Beresford R.; Luo L. F.; Wang W. I.

Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature
Appl. Phys. Lett. 54, 1899 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
113.
1989

Shanabrook B. V.; Glembocki O. J.; Broido D. A.; Wang W. I.

Luttinger parameters for GaAs determined from the intersubband transitions in GaAs/AlxGa1-;xAs multiple quantum wells
Phys. Rev. B 39, 3411 (1989)
Naval Research Laboratory, Washington, D.C. 20375‐5000;
114.
1988

Luo L. F.; Beresford R.; Wang W. I.

Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
Appl. Phys. Lett. 53, 2320 (1988)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
115.
1988

Via L.; Bauer G. E. W.; Potemski M.; Maan J. C.; Mendez E. E.; Wang W. I.

High‐angular‐momentum excitons in GaAs/Ga;1-;xAlxAs quantum wells
Phys. Rev. B 38, 10154 (1988)
Instituto de Ciencia de Materiales del Consejo Superior de Investigaciones Cientificas, Universidad de Zaragoza, 50009 Zaragoza, Spain
116.
1988

Houng Mau-Phon; Chang Yia-Chung; Wang W. I.

Orientation dependence of valence‐subband structures in GaAs‐Ga;1-;xAlxAs quantum‐well structures
J. Appl. Phys. 64, 4609 (1988)
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana‐Champaign, 1110 West Green Street, Urbana, Illinois 61801;
117.
1988

Mendez E. E.; Calleja E.; Wang W. I.

Inelastic tunneling in AlAs‐GaAs‐AlAs heterostructures
Appl. Phys. Lett. 53, 977 (1988)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
118.
1988

Bose S. S.; Lee B.; Kim M. H.; Stillman G. E.; Wang W. I.

Influence of the substrate orientation on Si incorporation in molecular‐beam epitaxial GaAs
J. Appl. Phys. 63, 743 (1988)
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801;
119.
1987

Masselink W. T.; Braslau N.; Wang W. I.; Wright S. L.

Electron velocity and negative differential mobility in AlGaAs/GaAs modulation‐doped heterostructures
Appl. Phys. Lett. 51, 1533 (1987)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
120.
1987

Tejedor C.; Staines M.; Wang W. I.; Mendez E. E.; Vina L.; Brey L.; Calleja J. M.; Cardona M.

Resonant Raman scattering in GaAs‐Ga;1-;xAlxAs quantum wells in an electric field
Phys. Rev. B 36, 6054 (1987)
Departamento de Fisica, Universidad Autonoma, Cantoblanco, 28049 Madrid, Spain
121.
1987

Hong J. M.; Wu M. C.; Wang S.; Wang W. I.; Chang L. L.

GaAs‐GaAlAs graded‐index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO;2‐masked substrates
Appl. Phys. Lett. 51, 886 (1987)
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
122.
1987

Vina L.; Collins R. T.; Mendez E. E.; Wang W. I.

Vin~;a Iet al.P reply
Phys. Rev. Lett. 59, 602 (1987)
Instituto de Ciencia de Materiales, Universidad de ZaragozaConsejo Superior de Investigaciones Cientficas, 50009 Zaragoza, Spain
123.
1987

Collins R. T.; Vina L.; Wang W. I.; Chang L. L.; Esaki L.; v. Klitzing K.; Ploog K.

Mixing between heavy‐hole and light‐hole excitons in GaAs/Al;xGa1-;xAs quantum wells in an electric field
Phys. Rev. B 36, 1531 (1987)
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
124.
1987

Kuan T. S.; Wang W. I.; Wilkie E. L.

Long‐range order in In;xGa1-;xAs
Appl. Phys. Lett. 51, 51 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
125.
1987

Smith T. P.; Wang W. I.; Fang F. F.; Chang L. L.

Two‐dimensional magnetotransport in AlAs quantum wells
Phys. Rev. B 35, 9349 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
126.
1987

Johnson G. R.; Cavenett B. C.; Kana'ah A.; Pakulis E. J.; Wang W. I.

Two‐ and three‐dimensional magnetoluminescence measurements in a GaAs/AlGaAs multiple quantum well
Appl. Phys. Lett. 50, 1512 (1987)
University of Hull, Hull, United Kingdom
127.
1987

Mendez E. E.; Wang W. I.; Calleja E.; Gonçalves da Silva C. E. T.

Resonant tunneling via X‐point states in AlAs‐GaAs‐AlAs heterostructures
Appl. Phys. Lett. 50, 1263 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
128.
1987

Wang W. I.; Calleja E.; Mendez E. E.

Summary Abstract: Tunneling in AlAs/GaAs/AlAs heterostructures under hydrostatic pressure
J. Vac. Sci. Technol. B 5, 775 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
129.
1987

Schlesinger Z.; Wang W. I.; MacDonald A. H.

Dynamical conductivity of the GaAs two‐dimensional electron gas at low temperature and carrier density
Phys. Rev. Lett. 58, 73 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
130.
1986

Mendez E. E.; Calleja E.; Wang W. I.

Tunneling through indirect‐gap semiconductor barriers
Phys. Rev. B 34, 6026 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
131.
1986

Wang W. I.; Mendez E. E.; Iye Y.; Lee B.; Kim M. H.; Stillman G. E.

High mobility two‐dimensional hole gas in an Al;0.26Ga0.74As/GaAs heterojunction
J. Appl. Phys. 60, 1834 (1986)
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
132.
1986

Rodríguez G. A.; Hart R. M.; Sievers A. J.; Keilmann F.; Schlesinger Z.; Wright S. L.; Wang W. I.

Intensity‐dependent cyclotron resonance in a GaAs/GaAlAs two‐dimensional electron gas
Appl. Phys. Lett. 49, 458 (1986)
Max–Planck‐Institut für Festkörperforschung, 7000 Stuttgart 80, Federal Republic of Germany;
133.
1986

Smith T. P.; Wang W. I.; Stiles P. J.

Two‐dimensional density of states in the extreme quantum limit
Phys. Rev. B 34, 2995 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
134.
1986

Mendez E. E.; Calleja E.; da Silva C. E. T. Gonçalves; Chang L. L.; Wang W. I.

Observation by resonant tunneling of high‐energy states in GaAs‐Ga;1-;xAlxAs quantum wells
Phys. Rev. B 33, 7368 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
135.
1986

Iye Y.; Mendez E. E.; Wang W. I.; Esaki L.

Magnetotransport properties and subband structure of the two‐dimensional hole gas in GaAs‐Ga;1-;xAlxAs heterostructures
Phys. Rev. B 33, 5854 (1986)
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
136.
1986

Wang W. I.; Kuan T. S.; Tsang J. C.; Chang L. L.; Esaki L.

Segregated AlGaAs(110) grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 4, 517 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
137.
1986

Wright S. L.; Marks R. F.; Wang W. I.

Reproducible temperature measurement of GaAs substrates during molecular beam epitaxial growth
J. Vac. Sci. Technol. B 4, 505 (1986)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
138.
1986

Mendez E. E.; Esaki L.; Wang W. I.

Resonant magnetotunneling in GaAlAs‐GaAs‐GaAlAs heterostructures
Phys. Rev. B 33, 2893 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
139.
1986

Wang W. I.; Marks R. F.; Vina L.

High‐purity GaAs grown by molecular‐beam epitaxy
J. Appl. Phys. 59, 937 (1986)
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
140.
1986

Vina L.; Wang W. I.

AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
Appl. Phys. Lett. 48, 36 (1986)
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
141.
1985

Wang W. I.

On the long‐range order in AlGaAs
J. Appl. Phys. 58, 3244 (1985)
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
142.
1985

Wang W. I.; Mendez E. E.; Kuan T. S.; Esaki L.

Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
Appl. Phys. Lett. 47, 826 (1985)
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
143.
1985

Mendez E. E.; Wang W. I.; Ricco B.; Esaki L.

Resonant tunneling of holes in AlAs‐GaAs‐AlAs heterostructures
Appl. Phys. Lett. 47, 415 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
144.
1985

Wang W. I.; Stern Frank

Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment
J. Vac. Sci. Technol. B 3, 1280 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
145.
1985

Wang W. I.; Ricco B.; Mendez E. E.; Esaki L.

Summary Abstract: Resonant tunneling of holes in quantum well heterostructures
J. Vac. Sci. Technol. B 3, 1149 (1985)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
146.
1985

Mendez E. E.; Wang W. I.

Temperature dependence of hole mobility in GaAs‐Ga;1-;xAlxAs heterojunctions
Appl. Phys. Lett. 46, 1159 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
147.
1985

Wang W. I.; Kuan T. S.; Mendez E. E.; Esaki L.

Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
Phys. Rev. B 31, 6890 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
148.
1985

Kuan T. S.; Kuech T. F.; Wang W. I.; Wilkie E. L.

Long‐range order in Al;xGa1-;xAs
Phys. Rev. Lett. 54, 201 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
149.
1984

Wang W. I.; Mendez E. E.; Stern Frank

High mobility hole gas and valence‐band offset in modulation‐doped ;p‐AlGaAs/GaAs heterojunctions
Appl. Phys. Lett. 45, 639 (1984)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
150.
1984

Mendez E. E.; Wang W. I.; Chang L. L.; Esaki L.

Fractional quantum Hall effect in a two‐dimensional hole system
Phys. Rev. B 30, 1087 (1984)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
151.
1984

Wang W. I.

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
Appl. Phys. Lett. 44, 1149 (1984)
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
152.
1983

Heiblum M.; Wang W. I.; Osterling L. E.; Deline V.

Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
J. Appl. Phys. 54, 6751 (1983)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

Co-authors

Co-publications
25

Mendez, EE
14

Beresford, Roderic
11

Héroux, JB
11

Jurkovic, MJ
10

Li, LK
8

Teich, Malvin C.
8

Vina, Luis
8

Yang, Xiaodong
7

Meyer, Jerry R.
7

Li, W
6

Pei, CW
5

Moscicka, D
5

Calleja, Enrique
5

Stillman, GE
4

Heroux, JB