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Tsui, Daniel C.

Computed

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Research Profile

Latest Publications

1.
2011

Pan W.; Baldwin K. W.; West K. W.; Pfeiffer L. N.; Tsui D. C.

Quantitative examination of the collapse of spin splitting in the quantum Hall regime
Phys. Rev. B 84, 161307 (2011)
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
2.
2011

Lu T. M.; Lee C.-H.; Huang S.-H.; Tsui D. C.; Liu C. W.

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
Appl. Phys. Lett. 99, 153510 (2011)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
3.
2011

Lu T. M.; Pan W.; Tsui D. C.; Liu P. C.; Zhang Z.; Xie Y. H.

Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in a Si/SiGe Quantum Well
Phys. Rev. Lett. 107, 126403 (2011)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

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All Publications

1.
2011

Pan W.; Baldwin K. W.; West K. W.; Pfeiffer L. N.; Tsui D. C.

Quantitative examination of the collapse of spin splitting in the quantum Hall regime
Phys. Rev. B 84, 161307 (2011)
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
2.
2011

Lu T. M.; Lee C.-H.; Huang S.-H.; Tsui D. C.; Liu C. W.

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
Appl. Phys. Lett. 99, 153510 (2011)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
3.
2011

Lu T. M.; Pan W.; Tsui D. C.; Liu P. C.; Zhang Z.; Xie Y. H.

Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in a Si/SiGe Quantum Well
Phys. Rev. Lett. 107, 126403 (2011)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
4.
2011

Pan W.; Masuhara N.; Sullivan N. S.; Baldwin K. W.; West K. W.; Pfeiffer L. N.; Tsui D. C.

Impact of Disorder on the 5/2 Fractional Quantum Hall State
Phys. Rev. Lett. 106, 206806 (2011)
Sandia National Labs, Albuquerque, New Mexico 87185, USA
5.
2010

Zhu Han; Chen Yong P.; Jiang P.; Engel L. W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Observation of a Pinning Mode in a Wigner Solid with ν=1/3 Fractional Quantum Hall Excitations
Phys. Rev. Lett. 105, 126803 (2010)
Princeton University, Princeton, New Jersey 08544, USA
6.
2010

Li Wanli; Luhman D. R.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Observation of Reentrant Phases Induced by Short-Range Disorder in the Lowest Landau Level of AlxGa1-xAs/Al0.32Ga0.68As Heterostructures
Phys. Rev. Lett. 105, 076803 (2010)
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
7.
2010

Jiang P.; Young A. F.; Chang W.; Kim P.; Engel L. W.; Tsui D. C.

Quantum oscillations observed in graphene at microwave frequencies
Appl. Phys. Lett. 97, 062113 (2010)
Department of Physics, Columbia University, New York, New York 10027, USA
8.
2010

Lu T. M.; Tsui D. C.; Lee C.-H.; Liu C. W.

Erratum: “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×10⁶ cm²/V s” [Appl. Phys. Lett. 94, 182102 (2009)]
Appl. Phys. Lett. 97, 059904 (2010)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
9.
2010

Lu T. M.; Lee C.-H.; Tsui D. C.; Liu C. W.

Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure
Appl. Phys. Lett. 96, 253103 (2010)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
10.
2010

Zhu Han; Sambandamurthy G.; Chen Yong P.; Jiang P.; Engel L. W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Pinning-Mode Resonance of a Skyrme Crystal near Landau-Level Filling Factor ν=1
Phys. Rev. Lett. 104, 226801 (2010)
Princeton University, Princeton, New Jersey 08544, USA
11.
2010

Li Wanli; Xia J. S.; Vicente C.; Sullivan N. S.; Pan W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Crossover from the nonuniversal scaling regime to the universal scaling regime in quantum Hall plateau transitions
Phys. Rev. B 81, 033305 (2010)
Princeton University, Princeton, New Jersey 08544, USA
12.
2009

Li Wanli; Vicente C. L.; Xia J. S.; Pan W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with the Anderson Localization Model
Phys. Rev. Lett. 102, 216801 (2009)
Princeton University, Princeton, New Jersey 08544, USA
13.
2009

Lu T. M.; Tsui D. C.; Lee C.-H.; Liu C. W.

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×10;⁶ ;cm²/V ;s
Appl. Phys. Lett. 94, 182102 (2009)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
14.
2009

Zhu Han; Sambandamurthy G.; Engel L. W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Pinning Mode Resonances of 2D Electron Stripe Phases: Effect of an In-Plane Magnetic Field
Phys. Rev. Lett. 102, 136804 (2009)
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
15.
2008

Luhman D. R.; Pan W.; Tsui D. C.; Pfeiffer L. N.; Baldwin K. W.; West K. W.

Observation of a Fractional Quantum Hall State at ν=1/4; in a Wide GaAs Quantum Well
Phys. Rev. Lett. 101, 266804 (2008)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
16.
2008

Lu T. M.; Liu J.; Schäffler F.; Mühlberger M.; Pan W.; Lyon S.; Tsui D. C.; Sun L.; Xie Y. H.

In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK
Phys. Rev. B 78, 233309 (2008)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
17.
2008

Sambandamurthy G.; Lewis R. M.; Zhu Han; Chen Y. P.; Engel L. W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Observation of Pinning Mode of Stripe Phases of 2D Systems in High Landau Levels
Phys. Rev. Lett. 100, 256801 (2008)
National High Magnetic Field Laboratory, Tallahassee, Florida 32306, USA
18.
2008

Koduvayur S. P.; Rokhinson L. P.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Anisotropic Modification of the Effective Hole g Factor by Electrostatic Confinement
Phys. Rev. Lett. 100, 126401 (2008)
Department of Physics, Purdue University, West Lafayette, Indiana 47907 USA
19.
2008

Liu J.; Lu T. M.; Kim J.; Lai K.; Tsui D. C.; Xie Y. H.

The proximity effect of the regrowth interface on two-dimensional electron density in strained Si
Appl. Phys. Lett. 92, 112113 (2008)
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, USA
20.
2008

Pan W.; Xia J. S.; Stormer H. L.; Tsui D. C.; Vicente C.; Adams E. D.; Sullivan N. S.; Baldwin K. W.; Pfeiffer L. N.; West K. W.

Experimental studies of the fractional quantum Hall effect in the first excited Landau level
Phys. Rev. B 77, 075307 (2008)
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
21.
2008

Lu T. M.; Li Z. F.; Tsui D. C.; Manfra M. J.; Pfeiffer L. N.; West K. W.

Cyclotron mass of two-dimensional holes in (100) oriented GaAs/;AlGaAs heterostructures
Appl. Phys. Lett. 92, 012109 (2008)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
22.
2007

Wang Zhihai; Chen Yong P.; Engel L. W.; Tsui D. C.; Tutuc E.; Shayegan M.

Pinning Modes and Interlayer Correlation in High-Magnetic-Field Bilayer Wigner Solids
Phys. Rev. Lett. 99, 136804 (2007)
National High Magnetic Field Laboratory, 1800 East Paul Dirac Drive, Tallahassee, Florida 32310, USA
23.
2007

Luhman D. R.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Electronic transport studies of a systematic series of GaAs/;AlGaAs quantum wells
Appl. Phys. Lett. 91, 072104 (2007)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
24.
2007

Huang Jian; Xia J. S.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Disappearance of Metal-Like Behavior in GaAs Two-Dimensional Holes below 30 mK
Phys. Rev. Lett. 98, 226801 (2007)
PRISM, Princeton University, Princeton, New Jersey 08544, USA
25.
2007

Lu T. M.; Liu J.; Kim J.; Lai K.; Tsui D. C.; Xie Y. H.

Capacitively induced high mobility two-dimensional electron gas in undoped Si/;Si1-x;Gex heterostructures with atomic-layer-deposited dielectric
Appl. Phys. Lett. 90, 182114 (2007)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
26.
2007

Lu T. M.; Luhman D. R.; Lai K.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Undoped high mobility two-dimensional hole-channel GaAs/;AlxGa1-x;As heterostructure field-effect transistors with atomic-layer-deposited dielectric
Appl. Phys. Lett. 90, 112113 (2007)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
27.
2007

Csáthy G. A.; Pfeiffer L. N.; Tsui D. C.; West K. W.

Astability and Negative Differential Resistance of the Wigner Solid
Phys. Rev. Lett. 98, 066805 (2007)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
28.
2007

Lai K.; Pan W.; Tsui D. C.; Lyon S.; Mühlberger M.; Schäffler F.

Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
Phys. Rev. B 75, 033314 (2007)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
29.
2006

Huang Jian; Novikov D. S.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Nonactivated transport of strongly interacting two-dimensional holes in GaAs
Phys. Rev. B 74, 201302 (2006)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
30.
2006

Bo Xiang-Zheng; Rokhinson L. P.; Yao N.; Tsui D. C.; Sturm J. C.

SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth
J. Appl. Phys. 100, 094317 (2006)
Princeton Institute for the Science and Technology of Materials (PRISM), Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540
31.
2006

Li J.; Choi K. K.; Klem J. F.; Reno J. L.; Tsui D. C.

High gain, broadband InGaAs/;InGaAsP quantum well infrared photodetector
Appl. Phys. Lett. 89, 081128 (2006)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
32.
2006

Lai K.; Lu T. M.; Pan W.; Tsui D. C.; Lyon S.; Liu J.; Xie Y. H.; Mühlberger M.; Schäffler F.

Valley splitting of Si/;Si1-x;Gex heterostructures in tilted magnetic fields
Phys. Rev. B 73, 161301 (2006)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
33.
2006

Lai K.; Pan W.; Tsui D. C.; Lyon S.; Mühlberger M.; Schäffler F.

Intervalley Gap Anomaly of Two-Dimensional Electrons in Silicon
Phys. Rev. Lett. 96, 076805 (2006)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
34.
2005

Lai K.; Ye P. D.; Pan W.; Tsui D. C.; Lyon S. A.; Mühlberger M.; Schäffler F.

Modulation of the high mobility two-dimensional electrons in Si/;SiGe using atomic-layer-deposited gate dielectric
Appl. Phys. Lett. 87, 142103 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
35.
2005

Lai K.; Pan W.; Tsui D. C.; Lyon S. A.; Mühlberger M.; Schäffler F.

Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well
Phys. Rev. B 72, 081313 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
36.
2005

Pan W.; Baldwin K. W.; Pfeiffer L. N.; Sullivan N. S.; Adams E. D.; Vicente C. L.; Tsui D. C.; Stormer H. L.; Xia J. S.; West K. W.

Quantization of the Diagonal Resistance: Density Gradients and the Empirical Resistance Rule in a 2D System
Phys. Rev. Lett. 95, 066808 (2005)
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
37.
2005

Gervais G.; Baldwin K. W.; Pfeiffer L. N.; Reyes A. P.; Moulton W. G.; Kuhns P. L.; Engel L. W.; Tsui D. C.; Stormer H. L.; West K. W.

NMR in the solid phase of two-dimensional electrons at high magnetic fields
Phys. Rev. B 72, 041310 (2005)
Department of Physics and Department of Applied Physics, Columbia University, New York, New York 10027, USA
38.
2005

Majumdar Amlan; Reno J. L.; Choi K. K.; Tsui D. C.

Voltage tunable superlattice infrared detector for mid- and long-wavelength detection
Appl. Phys. Lett. 86, 261110 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
39.
2005

Csáthy G. A.; Noh Hwayong; Tsui D. C.; Pfeiffer L. N.; West K. W.

Magnetic-Field-Induced Insulating Phases at Large rs
Phys. Rev. Lett. 94, 226802 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
40.
2005

Li Wanli; Pfeiffer L. N.; Tsui D. C.; Csáthy G. A.; West K. W.

Scaling and Universality of Integer Quantum Hall Plateau-to-Plateau Transitions
Phys. Rev. Lett. 94, 206807 (2005)
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
41.
2005

Li J.; Choi K. K.; Tsui D. C.

Voltage-tunable four-color quantum-well infrared photodetectors
Appl. Phys. Lett. 86, 211114 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
42.
2005

Gervais G.; Stormer H. L.; Tsui D. C.; Kuhns P. L.; Moulton W. G.; Reyes A. P.; Pfeiffer L. N.; Baldwin K. W.; West K. W.

Evidence for Skyrmion Crystallization from NMR Relaxation Experiments
Phys. Rev. Lett. 94, 196803 (2005)
Department of Physics and Department of Applied Physics, Columbia University, New York, New York 10027 USA
43.
2005

Csáthy G. A.; Xia J. S.; Vicente C. L.; Adams E. D.; Sullivan N. S.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Tilt-Induced Localization and Delocalization in the Second Landau Level
Phys. Rev. Lett. 94, 146801 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
44.
2005

Pillarisetty R.; Noh Hwayong; Tutuc E.; De Poortere E. P.; Lai K.; Tsui D. C.; Shayegan M.

Coulomb drag near the metal-insulator transition in two dimensions
Phys. Rev. B 71, 115307 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
45.
2005

Lewis R. M.; Chen Yong P.; Engel L. W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Microwave resonance of the reentrant insulating quantum Hall phases in the first excited Landau level
Phys. Rev. B 71, 081301 (2005)
NHMFL, Florida State University, Tallahassee, Florida 32310, USA
46.
2005

Pan W.; Csáthy G. A.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Transition from a fractional quantum Hall liquid to an electron solid at Landau level filling ν=;13 in tilted magnetic fields
Phys. Rev. B 71, 035302 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
47.
2005

Pillarisetty R.; Noh Hwayong; Tutuc E.; Poortere E. P. De; Tsui D. C.; Shayegan M.

Spin Polarization Dependence of the Coulomb Drag at Large rs
Phys. Rev. Lett. 94, 016807 (2005)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
48.
2004

Gervais G.; Engel L. W.; Stormer H. L.; Tsui D. C.; Baldwin K. W.; West K. W.; Pfeiffer L. N.

Competition between a Fractional Quantum Hall Liquid and Bubble and Wigner Crystal Phases in the Third Landau Level
Phys. Rev. Lett. 93, 266804 (2004)
Department of Physics and Department of Applied Physics, Columbia University, New York, New York 10027, USA
49.
2004

Noh Hwayong; Yoon Jongsoo; Tsui Daniel C.; Shayegan Mansour

Insulating behavior of dilute two-dimensional holes in GaAs under an in-plane magnetic field
Phys. Rev. B 70, 241306 (2004)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
50.
2004

Chen Yong P.; Lewis R. M.; Engel L. W.; Tsui D. C.; Ye P. D.; Wang Z. H.; Pfeiffer L. N.; West K. W.

Evidence for Two Different Solid Phases of Two-Dimensional Electrons in High Magnetic Fields
Phys. Rev. Lett. 93, 206805 (2004)
51.
2004

Xia J. S.; Pan W.; Vicente C. L.; Adams E. D.; Sullivan N. S.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; Baldwin K. W.; West K. W.

Electron Correlation in the Second Landau Level: A Competition Between Many Nearly Degenerate Quantum Phases
Phys. Rev. Lett. 93, 176809 (2004)
52.
2004

Lewis R. M.; Chen Yong; Engel L. W.; Tsui D. C.; Ye P. D.; Pfeiffer L. N.; West K. W.

Evidence of a First-Order Phase Transition Between Wigner-Crystal and Bubble Phases of 2D Electrons in Higher Landau Levels
Phys. Rev. Lett. 93, 176808 (2004)
NHMFL, Florida State University, Tallahassee, FL 32310, USA
53.
2004

Lai K.; Pan W.; Tsui D. C.; Lyon S.; Mühlberger M.; Schäffler F.

Two-Flux Composite Fermion Series of the Fractional Quantum Hall States in Strained Si
Phys. Rev. Lett. 93, 156805 (2004)
54.
2004

Ellis A. R.; Majumdar Amlan; Choi K. K.; Reno J. L.; Tsui D. C.

Binary superlattice quantum-well infrared photodetectors for long-wavelength broadband detection
Appl. Phys. Lett. 84, 5127 (2004)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
55.
2004

Peled E.; Chen Y.; Diez E.; Tsui D. C.; Shahar D.; Sivco D. L.; Cho A. Y.

Symmetries of the resistance of mesoscopic samples in the quantum Hall regime
Phys. Rev. B 69, 241305 (2004)
Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100, Israel
56.
2004

Lai K.; Tsui D. C.; Pan W.; Xie Ya-Hong

Fractional quantum Hall effect at ν=;23 and 43 in strained Si quantum wells
Phys. Rev. B 69, 125337 (2004)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
57.
2004

Lai K.; Pan W.; Tsui D. C.; Xie Ya-Hong

Observation of the apparent metal–insulator transition of high-mobility two-dimensional electron system in a ;Si/Si1-x;Gex heterostructure
Appl. Phys. Lett. 84, 302 (2004)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
58.
2003

Majumdar Amlan; Choi K. K.; Reno J. L.; Tsui D. C.

Voltage tunable two-color infrared detection using semiconductor superlattices
Appl. Phys. Lett. 83, 5130 (2003)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
59.
2003

Noh Hwayong; Pfeiffer L. N.; Simmons J. A.; Tsui D. C.; Lilly M. P.; West K. W.

Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs
Phys. Rev. B 68, 241308 (2003)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
60.
2003

Pan W.; Lai K.; Bayrakci S. P.; Ong N. P.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells
Appl. Phys. Lett. 83, 3519 (2003)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
61.
2003

Noh H.; Lilly M. P.; Tsui D. C.; Simmons J. A.; Hwang E. H.; Das Sarma S.; Pfeiffer L. N.; West K. W.

Interaction corrections to two-dimensional hole transport in the large-rs limit
Phys. Rev. B 68, 165308 (2003)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
62.
2003

Li Wanli; Csáthy G. A.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Direct observation of alloy scattering of two-dimensional electrons in AlxGa1-x;As
Appl. Phys. Lett. 83, 2832 (2003)
Department of Physics, Princeton University, Princeton, New Jersey 08544;
63.
2003

Chen Yong; Lewis R. M.; Engel L. W.; Tsui D. C.; Ye P. D.; Pfeiffer L. N.; West K. W.

Microwave Resonance of the 2D Wigner Crystal around Integer Landau Fillings
Phys. Rev. Lett. 91, 016801 (2003)
64.
2003

Pillarisetty R.; Tsui D. C.; De Poortere E. P.; Tutuc E.; Noh Hwayong; Shayegan M.

In-Plane Magnetodrag between Dilute Two-Dimensional Systems
Phys. Rev. Lett. 90, 226801 (2003)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
65.
2003

Majumdar Amlan; Choi K. K.; Reno J. L.; Rokhinson L. P.; Tsui D. C.

Temperature dependence of electron transfer in coupled quantum wells
Appl. Phys. Lett. 82, 686 (2003)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
66.
2002

Ye P. D.; Engel L. W.; Tsui D. C.; Lewis R. M.; Pfeiffer L. N.; West K.

Correlation Lengths of the Wigner-Crystal Order in a Two-Dimensional Electron System at High Magnetic Fields
Phys. Rev. Lett. 89, 176802 (2002)
67.
2002

Bo Xiang-Zheng; Rokhinson Leonid P.; Yin Haizhou; Tsui D. C.; Sturm J. C.

Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation
Appl. Phys. Lett. 81, 3263 (2002)
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
68.
2002

Lewis R. M.; Ye P. D.; Engel L. W.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Microwave Resonance of the Bubble Phases in 1/4 and 3/4 Filled High Landau Levels
Phys. Rev. Lett. 89, 136804 (2002)
69.
2002

Pillarisetty R.; Noh Hwayong; Tsui D. C.; De Poortere E. P.; Tutuc E.; Shayegan M.

Frictional Drag between Two Dilute Two-Dimensional Hole Layers
Phys. Rev. Lett. 89, 016805 (2002)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
70.
2002

Rokhinson L. P.; Guo L. J.; Chou S. Y.; Tsui D. C.; Eisenberg E.; Berkovits R.; Altshuler B. L.

Coherent Electron Transport in a Si Quantum Dot Dimer
Phys. Rev. Lett. 88, 186801 (2002)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
71.
2002

Majumdar Amlan; Reno J. L.; Rokhinson L. P.; Choi K. K.; Tsui D. C.

Electron transfer in voltage tunable two-color infrared photodetectors
J. Appl. Phys. 91, 4623 (2002)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
72.
2002

Ye P. D.; Engel L. W.; Tsui D. C.; Simmons J. A.; Wendt J. R.; Vawter G. A.; Reno J. L.

High magnetic-field microwave conductivity of two-dimensional electrons in an array of antidots
Phys. Rev. B 65, 121305 (2002)
National High Magnetic Field Laboratory, Tallahassee, Florida 32310;
73.
2002

Mao J.; Majumdar Amlan; Choi K. K.; Tsui D. C.; Leung K. M.; Lin C. H.; Tamir T.; Vawter G. A.

Light coupling mechanism of quantum grid infrared photodetectors
Appl. Phys. Lett. 80, 868 (2002)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
74.
2002

Majumdar Amlan; Choi K. K.; Reno J. L.; Rokhinson L. P.; Tsui D. C.

Two-color quantum-well infrared photodetector with voltage tunable peaks
Appl. Phys. Lett. 80, 707 (2002)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
75.
2002

Majumdar Amlan; Choi K. K.; Rokhinson L. P.; Tsui D. C.

Towards a voltage tunable two-color quantum-well infrared photodetector
Appl. Phys. Lett. 80, 538 (2002)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
76.
2001

Rokhinson L. P.; Guo L. J.; Chou S. Y.; Tsui D. C.

Magnetically Induced Reconstruction of the Ground State in a Few-Electron Si Quantum Dot
Phys. Rev. Lett. 87, 166802 (2001)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
77.
2001

Ye P. D.; Wendt J. R.; Vawter G. A.; Engel L. W.; Tsui D. C.; Simmons J. A.; Reno J. L.

Giant microwave photoresistance of two-dimensional electron gas
Appl. Phys. Lett. 79, 2193 (2001)
National High Magnetic Field Laboratory, Tallahassee, Florida 32310;
78.
2001

Pan W.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; Baldwin K. W.; West K. W.

Highly anisotropic transport in the integer quantum Hall effect
Phys. Rev. B 64, 121305 (2001)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
79.
2001

Noh H.; Yoon Jongsoo; Tsui D. C.; Shayegan M.

Nonmonotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlxGa1-x;As
Phys. Rev. B 64, 081309 (2001)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
80.
2001

Rokhinson L. P.; Guo L. J.; Chou S. Y.; Tsui D. C.

Spin transitions in a small Si quantum dot
Phys. Rev. B 63, 035321 (2001)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
81.
2000

Hilke M.; Shahar D.; Song S. H.; Tsui D. C.; Xie Y. H.

Phase diagram of the integer quantum Hall effect in p-type germanium
Phys. Rev. B 62, 6940 (2000)
Department of Electronical Engineering, Princeton University, Princeton, New Jersey, 08544
82.
2000

Choi K. K.; Chen C. J.; Tsui D. C.

Corrugated quantum well infrared photodetectors for material characterization
J. Appl. Phys. 88, 1612 (2000)
U. S. Army Research Laboratory, Adelphi, Maryland 20783;
83.
2000

Majumdar Amlan; Rokhinson L. P.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Effective mass enhancement of two-dimensional electrons in a one-dimensional superlattice potential
Appl. Phys. Lett. 76, 3600 (2000)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
84.
2000

Yoon Jongsoo; Li C. C.; Shahar D.; Tsui D. C.; Shayegan M.

Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
Phys. Rev. Lett. 84, 4421 (2000)
85.
2000

Li C.-C.; Yoon J.; Engel L. W.; Shahar D.; Tsui D. C.; Shayegan M.

Microwave resonance and weak pinning in two-dimensional hole systems at high magnetic fields
Phys. Rev. B 61, 10905 (2000)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
86.
2000

Rokhinson L. P.; Guo L. J.; Chou S. Y.; Tsui D. C.

Double-dot charge transport in Si single-electron/hole transistors
Appl. Phys. Lett. 76, 1591 (2000)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
87.
2000

Pan W.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; Baldwin K. W.; West K. W.

Effective mass of the four-flux composite fermion at ν=1/4;
Phys. Rev. B 61, R5101 (2000)
Princeton University, Princeton, New Jersey 08544;
88.
2000

Yao J.; Tsui D. C.; Choi K. K.

Noise characteristics of quantum-well infrared photodetectors at low temperatures
Appl. Phys. Lett. 76, 206 (2000)
Electrical Engineering Department, Princeton University, Princeton, New Jersey 08544;
89.
1999

Rokhinson L. P.; Guo L. J.; Chou S. Y.; Tsui D. C.

Kondo-like zero-bias anomaly in electronic transport through an ultrasmall Si quantum dot
Phys. Rev. B 60, R16319 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
90.
1999

Rokhinson L. P.; Chen C. J.; Choi K. K.; Tsui D. C.; Vawter G. A.; Yan L.; Jiang M.; Tamir T.

Optimization of blazed quantum-grid infrared photodetectors
Appl. Phys. Lett. 75, 3701 (1999)
Department of Electrical Engineering, Princeton University, New Jersey 08544;
91.
1999

Chen C. J.; Choi K. K.; Rokhinson L.; Chang W. H.; Tsui D. C.

A characterization technique for quantum well infrared photodetectors
Appl. Phys. Lett. 75, 3210 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
92.
1999

Rokhinson L. P.; Tsui D. C.; Benton J. L.; Xie Y.-H.

Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si
Appl. Phys. Lett. 75, 2413 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
93.
1999

Pan W.; Du R. R.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; Baldwin K. W.; West K. W.

Strongly Anisotropic Electronic Transport at Landau Level Filling Factor ν =9/2 ; and ν =5/2 ; under a Tilted Magnetic Field
Phys. Rev. Lett. 83, 820 (1999)
94.
1999

Tsui Daniel C.

Nobel Lecture: Interplay of disorder and interaction in two-dimensional electron gas in intense magnetic fields
Rev. Mod. Phys. 71, 891 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
95.
1999

Pan W.; Tsui D. C.; Draper B. L.

Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET’s
Phys. Rev. B 59, 10208 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
96.
1999

Stormer Horst L.; Tsui Daniel C.; Gossard Arthur C.

The fractional quantum Hall effect
Rev. Mod. Phys. 71, S298 (1999)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974;
97.
1999

Yoon Jongsoo; Li C. C.; Shahar D.; Tsui D. C.; Shayegan M.

Wigner Crystallization and Metal-Insulator Transition of Two-Dimensional Holes in GaAs at B =0 ;
Phys. Rev. Lett. 82, 1744 (1999)
98.
1999

Chen C. J.; Choi K. K.; Rokhinson L.; Chang W. H.; Tsui D. C.

Corrugated quantum well infrared photodetectors for polarization detection
Appl. Phys. Lett. 74, 862 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
99.
1999

Rokhinson L. P.; Chen C. J.; Tsui D. C.; Vawter G. A.; Choi K. K.

Quantum grid infrared photodetectors
Appl. Phys. Lett. 74, 759 (1999)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
100.
1999

Yeh A. S.; Stormer H. L.; Tsui D. C.; Baldwin K. W.; Pfeiffer L. N.; West K. W.

Effective Mass and g Factor of Four-Flux-Quanta Composite Fermions
Phys. Rev. Lett. 82, 592 (1999)
101.
1998

Hanein Y.; Shahar D.; Yoon J.; Li C. C.; Tsui D. C.; Shtrikman Hadas

Observation of the metal-insulator transition in two-dimensional n-type GaAs
Phys. Rev. B 58, R13338 (1998)
Department of Condensed Matter Physics, Weizmann Institute, Rehovot 76100, Israel;
102.
1998

Hanein Y.; Tsui D. C.; Li C. C.; Yoon J.; Shahar D.; Shtrikman Hadas

Properties of the apparent metal-insulator transition in two-dimensional systems
Phys. Rev. B 58, R7520 (1998)
Department of Condensed Matter Physics, Weizmann Institute, Rehovot 76100, Israel;
103.
1998

Chen C. J.; Choi K. K.; Chang W. H.; Tsui D. C.

Corrugated infrared hot-electron transistors
Appl. Phys. Lett. 73, 1272 (1998)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544;
104.
1998

Hanein Y.; Meirav U.; Shahar D.; Li C. C.; Tsui D. C.; Shtrikman Hadas

The Metalliclike Conductivity of a Two-Dimensional Hole System
Phys. Rev. Lett. 80, 1288 (1998)
105.
1998

Yao J.; Chen C. J.; Choi K. K.; Chang W. H.; Tsui D. C.

Energy resolved noise measurements in quantum well infrared photodetectors
Appl. Phys. Lett. 72, 453 (1998)
Electrical Engineering Department, Princeton University, Engineering Quadrangle, Princeton, New Jersey 08540;
106.
1998

Chen C. J.; Choi K. K.; Chang W. H.; Tsui D. C.

Two-color corrugated quantum-well infrared photodetector for remote temperature sensing
Appl. Phys. Lett. 72, 7 (1998)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
107.
1997

Hilke M.; Shahar D.; Song S. H.; Tsui D. C.; Xie Y. H.; Monroe Don

Symmetry in the insulator–quantum-Hall–insulator transitions observed in a Ge/SiGe quantum well
Phys. Rev. B 56, R15545 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
108.
1997

Chen C. J.; Choi K. K.; Chang W. H.; Tsui D. C.

Performance of corrugated quantum well infrared photodetectors
Appl. Phys. Lett. 71, 3045 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
109.
1997

Kurdak Ç.; Chen C.-J.; Tsui D. C.; Parihar S.; Lyon S.; Weimann G. W.

Resistance fluctuations in GaAs/AlxGa1-x;As quantum point contact and Hall bar structures
Phys. Rev. B 56, 9813 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
110.
1997

Li C.-C.; Engel L. W.; Shahar D.; Tsui D. C.; Shayegan M.

Microwave Conductivity Resonance of Two-Dimensional Hole System
Phys. Rev. Lett. 79, 1353 (1997)
111.
1997

Shahar D.; Tsui D. C.; Shayegan M.; Shimshoni E.; Sondhi S. L.

A Different View of the Quantum Hall Plateau-to-Plateau Transitions
Phys. Rev. Lett. 79, 479 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
112.
1997

Song S.-H.; Pan Wei; Tsui D. C.; Xie Y. H.; Monroe Don

Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons
Appl. Phys. Lett. 70, 3422 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
113.
1997

Pan W.; Shahar D.; Tsui D. C.; Wei H. P.; Razeghi M.

Quantum Hall liquid-to-insulator transition in In1-x;GaxAs/InP ; heterostructures
Phys. Rev. B 55, 15431 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
114.
1997

Song S.-H.; Shahar D.; Tsui D. C.; Xie Y. H.; Monroe Don

New Universality at the Magnetic Field Driven Insulator to Integer Quantum Hall Effect Transitions
Phys. Rev. Lett. 78, 2200 (1997)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
115.
1997

Du R. R.; Yeh A. S.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.

g factor of composite fermions around ν=;32 from angular-dependent activation-energy measurements
Phys. Rev. B 55, R7351 (1997)
Princeton University, Princeton, New Jersey 08540
116.
1996

Chen C. J.; Kurdak Ç.; Tsui D. C.; Choi K. K.

Separation of partition noise from generation‐recombination noise in a three‐terminal quantum well infrared photodetector
Appl. Phys. Lett. 68, 2535 (1996)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540
117.
1996

Chen C. J.; Choi K. K.; Tidrow M. Z.; Tsui D. C.

Corrugated quantum well infrared photodetectors for normal incident light coupling
Appl. Phys. Lett. 68, 1446 (1996)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
118.
1995

Du R. R.; Yeh A. S.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Fractional quantum Hall effect around ν=3/2; Composite fermions with a spin
Phys. Rev. Lett. 75, 3926 (1995)
Princeton University, Princeton, New Jersey 08540
119.
1995

Katayama Y.; Tsui D. C.; Manoharan H. C.; Parihar S.; Shayegan M.

Charge transfer at double‐layer to single‐layer transition in double‐quantum‐well systems
Phys. Rev. B 52, 14817 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
120.
1995

Shahar D.; Tsui D. C.; Cunningham J. E.

Observation of the ν=1 quantum Hall effect in a strongly localized two‐dimensional system
Phys. Rev. B 52, 14372 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
121.
1995

Hirakawa K.; Yamanaka K.; Grayson M.; Tsui D. C.

Far‐infrared emission spectroscopy of hot two‐dimensional plasmons in Al;0.3Ga0.7As/GaAs heterojunctions
Appl. Phys. Lett. 67, 2326 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
122.
1995

Lin Shawn-Yu; Wei H. P.; Tsui D. C.; Klem J. F.

Cyclotron mass of two‐dimensional holes in strained‐layer GaAs/In;0.20Ga0.80As/GaAs quantum well structures
Appl. Phys. Lett. 67, 2170 (1995)
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
123.
1995

Grayson M.; Tsui D. C.; Shayegan M.; Hirakawa K.; Ghanbari R. A.; Smith Henry I.

Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs
Appl. Phys. Lett. 67, 1564 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
124.
1995

Kurdak Ç.; Tsui D. C.; Parihar S.; Lyon S. A.; Shayegan M.

Electron temperature in low‐dimensional wires using thermal noise measurements
Appl. Phys. Lett. 67, 386 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
125.
1995

Shahar D.; Tsui D. C.; Shayegan M.; Bhatt R. N.; Cunningham J. E.

Universal conductivity at the quantum Hall liquid to insulator transition
Phys. Rev. Lett. 74, 4511 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
126.
1995

Zhao Y.; Tsui D. C.; Santos M. B.; Shayegan M.; Ghanbari R. A.; Antoniadis D. A.; Smith H. I.

Grating‐induced cyclotron‐resonance anomaly in GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 51, 13174 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
127.
1995

Kurdak Ç.; Zaslavsky A.; Tsui D. C.; Santos M. B.; Shayegan M.

High field transport in an edge overgrown lateral superlattice
Appl. Phys. Lett. 66, 323 (1995)
Department of Electrical Engineering, Princeton University, Princeton New Jersey 08544
128.
1994

Du R. R.; Stormer H. L.; Tsui D. C.; Yeh A. S.; Pfeiffer L. N.; West K. W.

Drastic enhancement of composite fermion mass near Landau level filling v=1/2
Phys. Rev. Lett. 73, 3274 (1994)
Francis Bitter National Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
129.
1994

Wei H. P.; Engel L. W.; Tsui D. C.

Current scaling in the integer quantum Hall effect
Phys. Rev. B 50, 14609 (1994)
Department of Physics, Swain Hall West, Indiana University, Bloomington, Indiana 47405
130.
1994

Hwang S. W.; Tsui D. C.; Shayegan M.

Charge transport in a low‐disorder, low‐density one‐dimensional electron system
Phys. Rev. B 49, 16441 (1994)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
131.
1994

Katayama Y.; Tsui D. C.; Shayegan M.

Experimental study of σ;xx(T) for quasiparticle charge determination in the fractional quantum Hall effect
Phys. Rev. B 49, 7400 (1994)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
132.
1994

Kurdak Ç.; Tsui D. C.; Parihar S.; Santos M. B.; Manoharan H. C.; Lyon S. A.; Shayegan M.

Surface resonant tunneling transistor: A new negative transconductance device
Appl. Phys. Lett. 64, 610 (1994)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
133.
1993

Engel L. W.; Shahar D.; Kurdak Ç.; Tsui D. C.

Microwave frequency dependence of integer quantum Hall effect: Evidence for finite‐frequency scaling
Phys. Rev. Lett. 71, 2638 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
134.
1993

Hwang S. W.; Wei H. P.; Engel L. W.; Tsui D. C.; Pruisken A. M. M.

Scaling in spin‐degenerate Landau levels in the integer quantum Hall effect
Phys. Rev. B 48, 11416 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
135.
1993

Kuan C. H.; Tsui D. C.; Choi K. K.; Newman P. G.; Chang W. H.

Hot‐electron distribution in multiple quantum well infrared photodetectors
Appl. Phys. Lett. 63, 2091 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
136.
1993

Hwang S. W.; Tsui D. C.; Shayegan M.

Experimental evidence for finite‐width edge channels in integer and fractional quantum Hall effects
Phys. Rev. B 48, 8161 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
137.
1993

Zhao Y.; Smith Henry I.; Antoniadis D. A.; Ghanbari R. A.; Shayegan M.; Santos M.; Tsui D. C.; Kempa K.

Mode softening in the far‐infrared excitation of quantum‐wire arrays
Phys. Rev. B 48, 5249 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
138.
1993

Hirakawa K.; Grayson M.; Tsui D. C.; Kurdak Ç.

Blackbody radiation from hot two‐dimensional electrons in Al;xGa1-;xAs/GaAs heterojunctions
Phys. Rev. B 47, 16651 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
139.
1993

Katayama Y.; Tsui D. C.

Lumped circuit model of two‐dimensional to two‐dimensional tunneling transistors
Appl. Phys. Lett. 62, 2563 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
140.
1993

Du R. R.; Pfeiffer L. N.; Tsui D. C.; Stormer H. L.; West K. W.

Experimental evidence for new particles in the fractional quantum Hall effect
Phys. Rev. Lett. 70, 2944 (1993)
Princeton University, Princeton, New Jersey 08544
141.
1993

Li Yuan P.; Sajoto T.; Engel L. W.; Tsui D. C.; Shayegan M.

Two‐level random switching in the reentrant insulating phase around the ν=1/5 fractional quantum Hall liquid
Phys. Rev. B 47, 9933 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
142.
1993

Sajoto T.; Li Y. P.; Engel L. W.; Tsui D. C.; Shayegan M.

Hall resistance of the reentrant insulating phase around the 1/5 fractional quantum Hall liquid
Phys. Rev. Lett. 70, 2321 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
143.
1993

Hirakawa K.; Zhao Y.; Santos M. B.; Shayegan M.; Tsui D. C.

Anomalous cyclotron‐resonance line splitting of two‐dimensional holes in (311);A AlxGa1-;xAs/GaAs heterojunctions
Phys. Rev. B 47, 4076 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
144.
1992

Jiang H. W.; Pfeiffer L. N.; Stormer H. L.; Tsui D. C.; Engel L. W.; West K. W.

Transport properties of a two‐dimensional electron system at even‐denominator fillings of the lowest Landau level
Phys. Rev. B 46, 10468 (1992)
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
145.
1992

Kuan C. H.; Tsui D. C.; Choi K. K.

Superlattice band structure probed by tunneling hot‐electron injection
Appl. Phys. Lett. 61, 456 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
146.
1992

Nakamura K.; Tsui D. C.; Nihey F.; Toyoshima H.; Itoh T.

Resistance fluctuations in ballistic transport through one‐dimensional channels
Phys. Rev. B 45, 13781 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
147.
1992

Lin S. Y.; Zaslavsky A.; Hirakawa K.; Tsui D. C.; Klem J. F.

Erratum: ‘‘Subband dispersion of holes in AlAs/In;0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling’’ [Appl. Phys. Lett. ;60, 601 (1992)]
Appl. Phys. Lett. 60, 2812 (1992)
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
148.
1992

Zhao Y.; Tsui D. C.; Santos M.; Shayegan M.; Ghanbari R. A.; Antoniadis D. A.; Smith Henry I.

Magneto‐optical absorption in a two‐dimensional electron grid
Appl. Phys. Lett. 60, 1510 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
149.
1992

Suen Y. W.; Engel L. W.; Santos M. B.; Shayegan M.; Tsui D. C.

Observation of a ν=1/2 fractional quantum Hall state in a double‐layer electron system
Phys. Rev. Lett. 68, 1379 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
150.
1992

Santos M. B.; Suen Y. W.; Shayegan M.; Li Y. P.; Engel L. W.; Tsui D. C.

Observation of a reentrant insulating phase near the 1/3 fractional quantum Hall liquid in a two‐dimensional hole system
Phys. Rev. Lett. 68, 1188 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
151.
1992

Wang J. K.; Tsui D. C.; Santos M.; Shayegan M.

Heat‐capacity study of two‐dimensional electrons in GaAs/Al;xGa1-;xAs multiple‐quantum‐well structures in high magnetic fields; Spin‐split Landau levels
Phys. Rev. B 45, 4384 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
152.
1992

Wei H. P.; Lin S. Y.; Tsui D. C.; Pruisken A. M. M.

Effect of long‐range potential fluctuations on scaling in the integer quantum Hall effect
Phys. Rev. B 45, 3926 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
153.
1992

Engel L. W.; Hwang S. W.; Sajoto T.; Tsui D. C.; Shayegan M.

Fractional quantum Hall effect at ν=2/3 and 3/5 in tilted magnetic fields
Phys. Rev. B 45, 3418 (1992)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
154.
1992

Lin S. Y.; Zaslavsky A.; Hirakawa K.; Tsui D. C.; Klem J. F.

Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling
Appl. Phys. Lett. 60, 601 (1992)
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
155.
1991

Hwang S. W.; Tsui D. C.; Simmons J. A.; Shayegan M.

Quantum interference in two independently tunable parallel point contacts
Phys. Rev. B 44, 13497 (1991)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
156.
1991

Simmons J. A.; Hwang S. W.; Tsui D. C.; Wei H. P.; Engel L. W.; Shayegan M.

Resistance fluctuations in the integral‐ and fractional‐quantum‐Hall‐effect regimes
Phys. Rev. B 44, 12933 (1991)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
157.
1991

Jiang H. W.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Magnetotransport studies of the insulating phase around ν=1/5 Landau‐level filling
Phys. Rev. B 44, 8107 (1991)
MIT, Francis Bitter National Magnet Laboratory, Cambridge, Massachusetts 02139
158.
1991

Li Yuan P.; Tsui D. C.; Engel L. W.; Sajoto T.; Shayegan M.

Low‐frequency noise in the reentrant insulating phase around the 1/5 fractional quantum Hall liquid
Phys. Rev. Lett. 67, 1630 (1991)
Department of Electrical Engineering, Princeton Univeristy, Princeton, New Jersey 08544
159.
1991

Liu C. T.; Tsui D. C.; Shayegan M.; Ismail K.; Antoniadis D. A.; Smith Henry I.

Guiding‐center‐drift resonance of two‐dimensional electrons in a grid‐gate superlattice potential
Appl. Phys. Lett. 58, 2945 (1991)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
160.
1991

Lin S. Y.; Wei H. P.; Tsui D. C.; Klem J. F.; Allen S. J.

Extreme g‐factor anisotropy induced by strain
Phys. Rev. B 43, 12110 (1991)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
161.
1991

Zaslavsky A.; Tsui D. C.; Santos M.; Shayegan M.

Resonant tunneling of two‐dimensional electrons into one‐dimensional subbands of a quantum wire
Appl. Phys. Lett. 58, 1440 (1991)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
162.
1991

Watanabe Yukio; Tsui D. C.; Birmingham J. T.; Ong N. P.; Tarascon J. M.

Infrared reflectivity of single‐crystal Bi;2Mm+1ComOy (M=Ca,Sr,Ba; m=1,2), Bi2Sr3Fe2O9.2, and Bi2Sr2MnO6.25, isomorphic to Bi‐Cu‐based high‐;Tc oxides
Phys. Rev. B 43, 3026 (1991)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
163.
1990

Zaslavsky A.; Frei M. R.; Tsui D. C.

Liquid phase epitaxy regrowth of two‐dimensional electron gas on GaAs patterned by ;insitu meltback
Appl. Phys. Lett. 57, 2455 (1990)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
164.
1990

Lin S. Y.; Tsui D. C.; Dawson L. R.; Tigges C. P.; Schirber J. E.

Magneto optics of two‐dimensional holes in a strained‐layer InAs;0.15Sb0.85/InSb superlattice
Appl. Phys. Lett. 57, 1015 (1990)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
165.
1990

Li Yuan P.; Tsui D. C.; Heremans J. J.; Simmons J. A.; Weimann G. W.

Low‐frequency noise in transport through quantum point contacts
Appl. Phys. Lett. 57, 774 (1990)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
166.
1990

Jiang H. W.; Willett R. L.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.

Quantum liquid versus electron solid around ν=1/5 Landau‐level filling
Phys. Rev. Lett. 65, 633 (1990)
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachussetts 02139
167.
1990

Zaslavsky A.; Li Yuan P.; Tsui D. C.; Santos M.; Shayegan M.

Transport in transverse magnetic fields in resonant tunneling structures
Phys. Rev. B 42, 1374 (1990)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
168.
1990

Li Yuan P.; Zaslavsky A.; Tsui D. C.; Santos M.; Shayegan M.

Noise characteristics of double‐barrier resonant‐tunneling structures below 10 kHz
Phys. Rev. B 41, 8388 (1990)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544‐5263;
169.
1990

Nakamura K.; Tsui D. C.; Nihey F.; Toyoshima H.; Itoh T.

Electron focusing with multiparallel one‐dimensional channels made by focused ion beam
Appl. Phys. Lett. 56, 385 (1990)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
170.
1989

Frei M. R.; Tsui D. C.

Two‐dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
Appl. Phys. Lett. 55, 2432 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
171.
1989

Lin S. Y.; Tsui D. C.; Lee H.; Ackley D.

Conduction‐band offset in strained Al;0.15Ga0.85As/In0.15Ga0.85As/GaAs pseudomorphic structures
Appl. Phys. Lett. 55, 2211 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
172.
1989

Zaslavsky A.; Santos M.; Tsui D. C.; Shayegan M.

Magnetotunneling in double‐barrier heterostructures
Phys. Rev. B 40, 9829 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544‐5263;
173.
1989

Ismail K.; Antoniadis D. A.; Smith Henry I.; Liu C. T.; Nakamura K.; Tsui D. C.

A lateral‐surface‐superlattice structure on GaAs/AlGaAs for far‐infrared and magnetocapacitance measurements
J. Vac. Sci. Technol. B 7, 2000 (1989)
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge MA 02139
174.
1989

Simmons J. A.; Wei H. P.; Engel L. W.; Tsui D. C.; Shayegan M.

Resistance fluctuations in narrow AlGaAs/GaAs heterostructures: Direct evidence of fractional charge in the fractional quantum hall effect
Phys. Rev. Lett. 63, 1731 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
175.
1989

Vuong T. H. H.; Tsui D. C.; Tsang W. T.

Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy
J. Appl. Phys. 66, 3688 (1989)
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
176.
1989

Watanabe Yukio; Wang Z. Z.; Lyon S. A.; Tsui D. C.; Ong N. P.; Tarascon J. M.; Barboux P.

Mid‐infrared reflectivity and ellipsometry measurements on single‐crystal YBa;2Cu3O7 and Bi2Sr2CuO6+y
Phys. Rev. B 40, 6884 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
177.
1989

Willett R. L.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.; Shayegan M.; Santos M.; Sajoto T.

Current‐voltage discontinuities in high‐quality two‐dimensional electron systems at low Landau‐level filling factors
Phys. Rev. B 40, 6432 (1989)
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
178.
1989

Mensz P. M.; Tsui D. C.

High‐current effects in magnetotransport of two‐dimensional electrons in GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 40, 3919 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
179.
1989

Lin S. Y.; Liu C. T.; Tsui D. C.; Jones E. D.; Dawson L. R.

Cyclotron resonance of two‐dimensional holes in strained‐layer quantum well structure of (100)In;0.20Ga0.80As/GaAs
Appl. Phys. Lett. 55, 666 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
180.
1989

Liu C. T.; Mensz P.; Tsui D. C.; Weimann G.

Linewidth anomaly of two‐dimensional‐electron cyclotron resonance in the extreme quantum limit
Phys. Rev. B 40, 1716 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
181.
1989

Liu C. T.; Nakamura K.; Tsui D. C.; Ismail K.; Antoniadis D. A.; Smith Henry I.

Magneto‐optics of a quasi‐zero‐dimensional electron gas
Appl. Phys. Lett. 55, 168 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
182.
1989

Liu C. T.; Kane B. E.; Tsui D. C.; Weimann G.

Far‐infrared photovoltaic effect in a Landau level diode
Appl. Phys. Lett. 55, 162 (1989)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
183.
1988

Liu C. T.; Lin S. Y.; Tsui D. C.; Lee H.; Ackley D.

Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures
Appl. Phys. Lett. 53, 2510 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
184.
1988

Shayegan M.; Goldman V. J.; Santos M.; Sajoto T.; Engel L.; Tsui D. C.

Two‐dimensional electron system with extremely low disorder
Appl. Phys. Lett. 53, 2080 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
185.
1988

Jiang C.; Tsui D. C.; Weimann G.

Threshold transport of high‐mobility two‐dimensional electron gas in GaAs/AlGaAs heterostructures
Appl. Phys. Lett. 53, 1533 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
186.
1988

Willett R. L.; Stormer H. L.; Tsui D. C.; Pfeiffer L. N.; West K. W.; Baldwin K. W.

Termination of the series of fractional quantum Hall states at small filling factors
Phys. Rev. B 38, 7881 (1988)
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
187.
1988

Zaslavsky A.; Goldman V. J.; Tsui D. C.; Cunningham J. E.

Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
Appl. Phys. Lett. 53, 1408 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
188.
1988

Wang J. K.; Campbell J. H.; Tsui D. C.; Cho A. Y.

Heat capacity of the two‐dimensional electron gas in GaAs/Al;xGa1-;xAs multiple‐quantum‐well structures
Phys. Rev. B 38, 6174 (1988)
Department of Physics, Princeton University, Princeton, New Jersey 08544
189.
1988

Wei H. P.; Paalanen M. A.; Tsui D. C.; Pruisken A. M. M.

Experiments on delocalization and universality in the integral quantum Hall effect
Phys. Rev. Lett. 61, 1294 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
190.
1988

Kane B. E.; Tsui D. C.; Weimann G.

Evidence of inter‐Landau‐level tunneling in the integral quantum Hall effect
Phys. Rev. Lett. 61, 1123 (1988)
Physics Department, Princeton University, Princeton New Jersey 08544
191.
1988

Eisenstein J. P.; Willett R.; Stormer H. L.; Tsui D. C.; Gossard A. C.; English J. H.

Collapse of the even‐denominator fractional quantum Hall effect in tilted fields
Phys. Rev. Lett. 61, 997 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
192.
1988

Goldman V. J.; Shayegan M.; Tsui D. C.

Evidence for the fractional quantum hall state at ν;=(1/7
Phys. Rev. Lett. 61, 881 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
193.
1988

Willett R. L.; Stormer H. L.; Tsui D. C.; Gossard A. C.; English J. H.

Quantitative experimental test for the theoretical gap energies in the fractional quantum Hall effect
Phys. Rev. B 37, 8476 (1988)
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
194.
1988

Vuong T. H. H.; Tsui D. C.; Tsang W. T.

High‐field transport in an InGaAs‐InP superlattice grown by chemical beam epitaxy
Appl. Phys. Lett. 52, 981 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
195.
1988

Prasad S.; Wei H. P.; Tsui D. C.; Schlapp W.; Weimann G.

Transport and persistent photoconductivity in atomic‐planar‐doped GaAs‐AlAs/GaAs heterostructures
J. Appl. Phys. 63, 1793 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
196.
1988

Chou M. J.; Tsui D. C.; Weimann G.

Cyclotron resonance of high‐mobility two‐dimensional electrons at extremely low densities
Phys. Rev. B 37, 848 (1988)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
197.
1987

Razeghi M.; Maurel P.; Omnes F.; Defour M.; Acher O.; Tsui D.; Wei H. P.; Guldner Y.; Vieren J. P.

First observation of quantum Hall effect in a GaInAsP‐InP heterostructure grown by metalorganic vapor deposition
Appl. Phys. Lett. 51, 1821 (1987)
Laboratoire Matériaux Exploratoires, laboratoire Central de Recherches, THOMSON–CSF, BP N° 10‐91401 Orsay, France;
198.
1987

Boebinger G. S.; Tu C. W.; Cho A. Y.; Hwang J. C. M.; Chang A. M.; Tsui D. C.; Stormer H. L.; Weimann G.

Activation energies and localization in the fractional quantum Hall effect
Phys. Rev. B 36, 7919 (1987)
Department of Physics and Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
199.
1987

Choi K. K.; Tsui D. C.; Alavi K.

Dephasing time and one‐dimensional localization of two‐dimensional electrons in GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 36, 7751 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
200.
1987

Goldman V. J.; Tsui D. C.; Cunningham J. E.

Evidence for LO‐phonon‐emission‐assisted tunneling in double‐barrier heterostructures
Phys. Rev. B 36, 7635 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
201.
1987

Willett R.; Eisenstein J. P.; Störmer H. L.; Tsui D. C.; Gossard A. C.; English J. H.

Observation of an even‐denominator quantum number in the fractional quantum Hall effect
Phys. Rev. Lett. 59, 1776 (1987)
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
202.
1987

Goldman V. J.; Tsui D. C.; Cunningham J. E.

Goldman, Tsui, and Cunningham reply
Phys. Rev. Lett. 59, 1623 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
203.
1987

Kane B. E.; Tsui D. C.; Weimann G.

Evidence for edge currents in the integral quantum Hall effect
Phys. Rev. Lett. 59, 1353 (1987)
Physics Department, Princeton University, Princeton, New Jersey 08544
204.
1987

Lu Pong-Fei; Tsui D. C.; Cox H. M.

LO‐phonon oscillations and electron freeze‐out in transport through In‐InP and Sn‐InP contacts
Phys. Rev. B 35, 9659 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
205.
1987

Goldman V. J.; Tsui D. C.; Cunningham J. E.

Resonant tunneling in magnetic field: Evidence for space‐charge buildup
Phys. Rev. B 35, 9387 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
206.
1987

Vuong T. H. H.; Tsui D. C.; Tsang W. T.

Dependence of the conduction in In0.53Ga0.47As‐InP double‐barrier tunneling structures on the mesa‐etching process
Appl. Phys. Lett. 50, 1004 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
207.
1987

Goldman V. J.; Tsui D. C.; Cunningham J. E.; Tsang W. T.

Transport in double‐barrier resonant tunneling structures
J. Appl. Phys. 61, 2693 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
208.
1987

Goldman V. J.; Tsui D. C.; Cunningham J. E.

Observation of intrinsic bistability in resonant tunneling structures
Phys. Rev. Lett. 58, 1256 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
209.
1987

Frei Michel; Tsui D. C.; Tsang W. T.

Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy
Appl. Phys. Lett. 50, 606 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
210.
1987

Vuong T. H. H.; Tsui D. C.; Tsang W. T.

Tunneling in In0.53Ga0.47As‐InP double‐barrier structures
Appl. Phys. Lett. 50, 212 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
211.
1987

Choi K. K.; Tsui D. C.; Alavi K.

Experimental determination of the edge depletion width of ahe two‐dimensional electron gas in GaAs/Al;xGa1-;xAs
Appl. Phys. Lett. 50, 110 (1987)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
212.
1986

Zheng H. Z.; Wei H. P.; Tsui D. C.; Weimann G.

Gate‐controlled transport in narrow GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 34, 5635 (1986)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
213.
1986

Choi K. K.; Tsui D. C.; Palmateer S. C.

Electron‐electron interactions in GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. B 33, 8216 (1986)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
214.
1986

Wei H. P.; Tsui D. C.; Pruisken A. M. M.

Localization and scaling in the quantum Hall regime
Phys. Rev. B 33, 1488 (1986)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
215.
1985

Wei H. P.; Tsui D. C.; Chang A. M.; Razeghi M.

Temperature dependence of the quantized Hall effect
Phys. Rev. B 32, 7016 (1985)
Department of Electrical Engineering and Computer Sciences, Princeton University, Princeton, New Jersey 08544
216.
1985

Choi K. K.; Tsui D. C.; Palmateer S. C.

Size effects on electron‐electron interactions in GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. B 32, 5540 (1985)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
217.
1985

Zheng H. Z.; Tsui D. C.; Chang Albert M.

Distribution of the quantized Hall potential in GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. B 32, 5506 (1985)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
218.
1985

Boebinger G. S.; Chang A. M.; Stormer H. L.; Tsui D. C.

Magnetic field dependence of activation energies in the fractional quantum Hall effect
Phys. Rev. Lett. 55, 1606 (1985)
Department of Physics and Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
219.
1985

Chou M. J.; Tsui D. C.; Weimann G.

Negative photoconductivity of two‐dimensional holes in GaAs/AlGaAs heterojunctions
Appl. Phys. Lett. 47, 609 (1985)
Department of Electric Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
220.
1985

Zheng H. Z.; Choi K. K.; Tsui D. C.; Weimann G.

Observation of size effect in the quantum hall regime
Phys. Rev. Lett. 55, 1144 (1985)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
221.
1985

Lu Pong-Fei; Tsui D. C.; Cox H. M.

Optical‐phonon emission in ballistic transport through microchannels of InGaAs
Phys. Rev. Lett. 54, 1563 (1985)
Department of Electrical Engineering & Computer Science, Princeton University, Princeton, New Jersey 08544;
222.
1984

Wei H. P.; Chou M. J.; Tsui D. C.; Klem J.; Morkoç H.; Wagner R. J.

Transport studies of GaAs1-;xSbx‐Al;yGa1-;yAs strained‐layer superlattices
Appl. Phys. Lett. 45, 1292 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
223.
1984

Lu Pong-Fei; Tsui D. C.; Cox H. M.

Tunneling spectroscopy of In0.53Ga0.47As thin films
Appl. Phys. Lett. 45, 772 (1984)
Department of Electrical Engineering & Computer Science, Princeton University, Princeton, New Jersey 08544;
224.
1984

Bishop D. J.; Dynes R. C.; Lin B. J.; Tsui D. C.

Anisotropy in weakly localized electronic transport: A parameter‐free test of the scaling theory of localization
Phys. Rev. B 30, 3539 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
225.
1984

Lin B. J. F.; Tsui D. C.; Paalanen M. A.; Gossard A. C.

Mobility of the two‐dimensional electron gas in GaAs‐Al;xGa1-;xAs heterostructures
Appl. Phys. Lett. 45, 695 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
226.
1984

Wei H. P.; Tsui D. C.; Razeghi M.

Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
Appl. Phys. Lett. 45, 666 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08540
227.
1984

Chang A. M.; Berglund P.; Tsui D. C.; Stormer H. L.; Hwang J. C. M.

Higher order states in the multiple‐series, fractional, quantum Hall effect
Phys. Rev. Lett. 53, 997 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
228.
1984

Cage M. E.; Field B. F.; Dziuba R. F.; Girvin S. M.; Gossard A. C.; Tsui D. C.

Temperature dependence of the quantum Hall resistance
Phys. Rev. B 30, 2286 (1984)
Electricity Division, Center for Basic Standards, National Bureau of Standards, Washington, D.C. 20234
229.
1984

Tsui D. C.

Summary Abstract: Fractional quantum effect in transport along the GaAs–Al;xGa1-;xAs interface
J. Vac. Sci. Technol. B 2, 596 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08540
230.
1984

Paalanen M. A.; Tsui D. C.; Gossard A. C.; Hwang J. C. M.

Temperature dependence of electron mobility in GaAs‐Al;xGa1-;xAs heterostructures from 1 to 10 K
Phys. Rev. B 29, 6003 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
231.
1984

Paalanen M. A.; Tsui D. C.; Hwang J. C. M.

Erratum: Parabolic magnetoresistance from the interaction effect in a two‐dimensional‐electron gas [Phys. Rev. Lett. ;51, 2226 (1983)]
Phys. Rev. Lett. 52, 484 (1984)
NONE
232.
1984

Lin B. J. F.; Paalanen M. A.; Gossard A. C.; Tsui D. C.

Weak localization of two‐dimensional electrons in GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. B 29, 927 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
233.
1983

Paalanen M. A.; Tsui D. C.; Hwang J. C. M.

Parabolic magnetoresistance from the interaction effect in a two‐dimensional electron gas
Phys. Rev. Lett. 51, 2226 (1983)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
234.
1983

Chang A. M.; Tsui D. C.; Paalanen M. A.; Störmer H. L.; Hwang J. C. M.

Fractional quantum Hall effect at low temperatures
Phys. Rev. B 28, 6133 (1983)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
235.
1983

Cage M. E.; Tsui D. C.; Gossard A. C.; Girvin S. M.; Williams E. R.; Field B. F.; Dziuba R. F.; Wagner R. J.

Dissipation and dynamic nonlinear behavior in the quantum Hall regime
Phys. Rev. Lett. 51, 1374 (1983)
Electrical Measurements and Standards Division, Center for Absolute Physical Quantities, National Bureau of Standards, Washington, D.C. 20234
236.
1983

Tsui D. C.; Störmer H. L.; Hwang J. C. M.; Brooks J. S.; Naughton M. J.

Observation of a fractional quantum number
Phys. Rev. B 28, 2274 (1983)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
237.
1983

Hensel J. C.; Dynes R. C.; Tsui D. C.

Absorption of ballistic phonons by the (001) inversion layer of Si: Electron‐phonon interaction in two dimensions
Phys. Rev. B 28, 1124 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
238.
1983

Stormer H. L.; Schlesinger Z.; Chang A.; Tsui D. C.; Gossard A. C.; Wiegmann W.

Energy structure and quantized Hall effect of two‐dimensional holes
Phys. Rev. Lett. 51, 126 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
239.
1983

Stormer H. L.; Chang A.; Tsui D. C.; Hwang J. C. M.; Gossard A. C.; Wiegmann W.

Fractional quantization of the Hall effect
Phys. Rev. Lett. 50, 1953 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
240.
1983

Englert Th.; Maan J. C.; Uihlein Ch.; Tsui D. C.; Gossard A. C.

Cyclotron resonance of 2D electrons in GaAs/AlxGa1-;xAs heterostructures at low densities
J. Vac. Sci. Technol. B 1, 427 (1983)
Max‐Planck‐Institut für Festkörperforschung, Hochfeld–Magnetlabor, F‐38042 Grenoble, France;
241.
1983

Tsui D. C.; Gossard A. C.; Dolan G. J.

Radiation effects on modulation‐doped GaAs‐Al;xGa1-;xAs heterostructures
Appl. Phys. Lett. 42, 180 (1983)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
242.
1982

Allen S. J.; Wilson B. A.; Tsui D. C.

Cyclotron resonance, the memory function, and the random potential at the Si:SiO2 interface
Phys. Rev. B 26, 5590 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
243.
1982

Bishop D. J.; Dynes R. C.; Tsui D. C.

Magnetoresistance in Si metal‐oxide‐semiconductor field‐effect transistors; Evidence of weak localization and correlation
Phys. Rev. B 26, 773 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
244.
1982

Tsui D. C.; Stormer H. L.; Gossard A. C.

Two‐dimensional magnetotransport in the extreme quantum limit
Phys. Rev. Lett. 48, 1559 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
245.
1982

Paalanen M. A.; Tsui D. C.; Gossard A. C.

Quantized Hall effect at low temperatures
Phys. Rev. B 25, 5566 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
246.
1982

Maan J. C.; Englert Th.; Tsui D. C.; Gossard A. C.

Observation of cyclotron resonance in the photoconductivity of two‐dimensional electrons
Appl. Phys. Lett. 40, 609 (1982)
Max–Planck‐Institut für Festkörperforschung, Hochfeld‐Magnetlabor, 166X, F‐38042 Grenoble, France;
247.
1982

Gold A.; Wilson B. A.; Allen S. J.; Tsui D. C.

Frequency‐dependent conductivity of a strongly disordered two‐dimensional electron gas
Phys. Rev. B 25, 3519 (1982)
Physik‐Department, Technische Universität München, D8046 Garching, Germany;
248.
1982

Tsui D. C.; Störmer H. L.; Gossard A. C.

Zero‐resistance state of two‐dimensional electrons in a quantizing magnetic field
Phys. Rev. B 25, 1405 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
249.
1982

Tsui D. C.; Cage M. E.; Field B. F.; Gossard A. C.; Dziuba R. F.

Determination of the fine‐structure constant using GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. Lett. 48, 3 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
250.
1981

Wilson B. A.; Allen S. J.; Tsui D. C.

Evidence for a magnetic‐field‐induced Wigner glass in the two‐dimensional electron system in Si inversion layers
Phys. Rev. B 24, 5887 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
251.
1981

Tsui D. C.; Gossard A. C.; Kaminsky G.; Wiegmann W.

Transport properties of GaAs‐Al;xGa1-;x As heterojunction field‐effect transistors
Appl. Phys. Lett. 39, 712 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
252.
1981

Tsui D. C.; Allen S. J.

Localization and the quantized Hall resistance in the two‐dimensional electron gas
Phys. Rev. B 24, 4082 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
253.
1981

Baraff G. A.; Tsui D. C.

Explanation of quantized‐Hall‐resistance plateaus in heterojunction inversion layers
Phys. Rev. B 24, 2274 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
254.
1981

Tsui D. C.; Gossard A. C.

Resistance standard using quantization of the Hall resistance of GaAs‐Al;xGa1-;xAs heterostructures
Appl. Phys. Lett. 38, 550 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
255.
1981

Bishop D. J.; Tsui D. C.; Dynes R. C.

Observation of a non‐Ohmic Hall resistivity at low temperatures in a two‐dimensional electron gas
Phys. Rev. Lett. 46, 360 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
256.
1980

Wagner R. J.; McCombe B. D.; Kennedy T. A.; Tsui D. C.

Cyclotron resonance of electron inversion layers in Si (001) metal‐oxide‐semiconductorfield‐effect transistors (MOSFET’s)
Phys. Rev. B 22, 945 (1980)
Naval Research Laboratory, Washington, D.C. 20375
257.
1980

Kamgar Avid; Sturge M. D.; Tsui D. C.

Optical measurements of the minigaps in electron inversion layers on vicinal planes of Si (001)
Phys. Rev. B 22, 841 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
258.
1980

Bishop D. J.; Tsui D. C.; Dynes R. C.

Nonmetallic conduction in electron inversion layers at low temperatures
Phys. Rev. Lett. 44, 1153 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
259.
1980

Wilson B. A.; Allen S. J.; Tsui D. C.

Evidence for a collective ground state in Si inversion layers in the extreme quantum limit
Phys. Rev. Lett. 44, 479 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
260.
1980

Tsui D. C.; Störmer H. L.; Gossard A. C.; Wiegmann W.

Two‐dimensional electrical transport in GaAs‐Al;xGa1-;xAs multilayers at high magnetic fields
Phys. Rev. B 21, 1589 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
261.
1980

Tsui D. C.; Englert Th.; Cho A. Y.; Gossard A. C.

Observation of magnetophonon resonances in a two‐dimensional electronic system
Phys. Rev. Lett. 44, 341 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974

Co-authors

Co-publications
51

West, Ken W.
51

Pfeiffer, Loren N.
43

Shayegan, Mansour
29

Stormer, Horst
26

Pan, W
21

Choi, KK
21

Gossard, Arthur C.
17

Rokhinson, Leonid P.
17

Engel, LW
13

Lai, K
12

Xie, Ya-Hong
11

Lu, TM
11

Chen, CJ
9

Zaslavsky, A
9

Noh, Hwayong