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Skolnick, Maurice S.

Computed

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Research Profile

Latest Publications

1.
2012

Godden T. M.; Quilter J. H.; Ramsay A. J.; Wu Yanwen; Brereton P.; Boyle S. J.; Luxmoore I. J.; Puebla-Nunez J.; Fox A. M.; Skolnick M. S.

Coherent Optical Control of the Spin of a Single Hole in an InAs/GaAs Quantum Dot
Phys. Rev. Lett. 108, 017402 (2012)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
2.
2011

Cerda-Méndez E. A.; Krizhanovskii D. N.; Biermann K.; Wouters M.; Hey R.; Santos P. V.; Skolnick M. S.

Polariton Condensation In One‐ And Two‐ Dimensional Acoustic Lattices
AIP Conf. Proc. 1399, 1031 (2011)
Paul‐Drude‐Institut für Festkörperelektronik, Hausvogteiplatz 5‐7 10117, Berlin, Germany
3.
2011

Valentim P. T.; Luxmoore I. J.; Szymanski D.; Vasco J. P.; Vinck-Posada H.; Guimarães P.S. S.; Whittaker D. M.; Fox A. M.; Skolnick M. S.

Fano Resonance in GaAs 2D Photonic Crystal Nanocavities
AIP Conf. Proc. 1399, 1013 (2011)
Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil

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All Publications

1.
2012

Godden T. M.; Quilter J. H.; Ramsay A. J.; Wu Yanwen; Brereton P.; Boyle S. J.; Luxmoore I. J.; Puebla-Nunez J.; Fox A. M.; Skolnick M. S.

Coherent Optical Control of the Spin of a Single Hole in an InAs/GaAs Quantum Dot
Phys. Rev. Lett. 108, 017402 (2012)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
2.
2011

Cerda-Méndez E. A.; Krizhanovskii D. N.; Biermann K.; Wouters M.; Hey R.; Santos P. V.; Skolnick M. S.

Polariton Condensation In One‐ And Two‐ Dimensional Acoustic Lattices
AIP Conf. Proc. 1399, 1031 (2011)
Paul‐Drude‐Institut für Festkörperelektronik, Hausvogteiplatz 5‐7 10117, Berlin, Germany
3.
2011

Valentim P. T.; Luxmoore I. J.; Szymanski D.; Vasco J. P.; Vinck-Posada H.; Guimarães P.S. S.; Whittaker D. M.; Fox A. M.; Skolnick M. S.

Fano Resonance in GaAs 2D Photonic Crystal Nanocavities
AIP Conf. Proc. 1399, 1013 (2011)
Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
4.
2011

Couto O. D. D.; Puebla J.; Chekhovich E. A.; Luxmoore I. J.; Elliott C. J.; Babazadeh N.; Skolnick M. S.; Tartakovskii A. I.; Krysa A. B.

Charge control in InP/(Ga,In)P single quantum dots embedded in Schottky diodes
Phys. Rev. B 84, 125301 (2011)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
5.
2011

Walker P.; Liew T. C. H.; Sarkar D.; Durska M.; Love A. P. D.; Skolnick M. S.; Roberts J. S.; Shelykh I. A.; Kavokin A. V.; Krizhanovskii D. N.

Suppression of Zeeman Splitting of the Energy Levels of Exciton-Polariton Condensates in Semiconductor Microcavities in an External Magnetic Field
Phys. Rev. Lett. 106, 257401 (2011)
Department of Physics and Astronomy, University of Sheffield, Sheffield, United Kingdom
6.
2011

Ramsay A. J.; Godden T. M.; Boyle S. J.; Gauger E. M.; Nazir A.; Lovett B. W.; Gopal Achanta Venu; Fox A. M.; Skolnick M. S.

Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
J. Appl. Phys. 109, 102415 (2011)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
7.
2011

Kłopotowski Ł.; Voliotis V.; Kudelski A.; Tartakovskii A. I.; Wojnar P.; Fronc K.; Grousson R.; Krebs O.; Skolnick M. S.; Karczewski G.; Wojtowicz T.

Stark spectroscopy and radiative lifetimes in single self-assembled CdTe quantum dots
Phys. Rev. B 83, 155319 (2011)
Institute of Physics, Polish Academy of Sciences, PL-02-668 Warsaw, Poland
8.
2011

Chekhovich E. A.; Krysa A. B.; Skolnick M. S.; Tartakovskii A. I.

Light-polarization-independent nuclear spin alignment in a quantum dot
Phys. Rev. B 83, 125318 (2011)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
9.
2011

Luxmoore I. J.; Ahmadi E. D.; Fox A. M.; Hugues M.; Skolnick M. S.

Unpolarized H1 photonic crystal nanocavities fabricated by stretched lattice design
Appl. Phys. Lett. 98, 041101 (2011)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
10.
2011

Chekhovich E. A.; Krysa A. B.; Skolnick M. S.; Tartakovskii A. I.

Direct Measurement of the Hole-Nuclear Spin Interaction in Single InP/GaInP Quantum Dots Using Photoluminescence Spectroscopy
Phys. Rev. Lett. 106, 027402 (2011)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
11.
2010

Sarkar D.; Gavrilov S. S.; Sich M.; Quilter J. H.; Bradley R. A.; Gippius N. A.; Guda K.; Kulakovskii V. D.; Skolnick M. S.; Krizhanovskii D. N.

Polarization Bistability and Resultant Spin Rings in Semiconductor Microcavities
Phys. Rev. Lett. 105, 216402 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
12.
2010

Luxmoore I. J.; Ahmadi E. D.; Wasley N. A.; Fox A. M.; Tartakovskii A. I.; Krysa A. B.; Skolnick M. S.

Control of spontaneous emission from InP single quantum dots in GaInP photonic crystal nanocavities
Appl. Phys. Lett. 97, 181104 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
13.
2010

Ramsay A. J.; Godden T. M.; Boyle S. J.; Gauger E. M.; Nazir A.; Lovett B. W.; Fox A. M.; Skolnick M. S.

Phonon-Induced Rabi-Frequency Renormalization of Optically Driven Single InGaAs/GaAs Quantum Dots
Phys. Rev. Lett. 105, 177402 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
14.
2010

Makhonin M. N.; Chekhovich E. A.; Senellart P.; Lemaître A.; Skolnick M. S.; Tartakovskii A. I.

Optically tunable nuclear magnetic resonance in a single quantum dot
Phys. Rev. B 82, 161309 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
15.
2010

Cerda-Méndez E. A.; Krizhanovskii D. N.; Wouters M.; Bradley R.; Biermann K.; Guda K.; Hey R.; Santos P. V.; Sarkar D.; Skolnick M. S.

Polariton Condensation in Dynamic Acoustic Lattices
Phys. Rev. Lett. 105, 116402 (2010)
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
16.
2010

Godden T. M.; Boyle S. J.; Ramsay A. J.; Fox A. M.; Skolnick M. S.

Fast high fidelity hole spin initialization in a single InGaAs quantum dot
Appl. Phys. Lett. 97, 061113 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
17.
2010

Chekhovich E. A.; Makhonin M. N.; Skiba-Szymanska J.; Krysa A. B.; Kulakovskii V. D.; Skolnick M. S.; Tartakovskii A. I.

Dynamics of optically induced nuclear spin polarization in individual InP/GaxIn1-xP quantum dots
Phys. Rev. B 81, 245308 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
18.
2010

Collins R. J.; Clarke P. J.; Fernández V.; Gordon K. J.; Makhonin M. N.; Timpson J. A.; Tahraoui A.; Hopkinson M.; Fox A. M.; Skolnick M. S.; Buller G. S.

Quantum key distribution system in standard telecommunications fiber using a short wavelength single photon source
J. Appl. Phys. 107, 073102 (2010)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
19.
2010

Krizhanovskii D. N.; Biermann K.; Whittaker D. M.; Bradley R. A.; Guda K.; Sarkar D.; Sanvitto D.; Vina L.; Cerda E.; Santos P.; Hey R.; Skolnick M. S.

Effect of Interactions on Vortices in a Nonequilibrium Polariton Condensate
Phys. Rev. Lett. 104, 126402 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
20.
2010

Chekhovich E. A.; Makhonin M. N.; Kavokin K. V.; Krysa A. B.; Skolnick M. S.; Tartakovskii A. I.

Pumping of Nuclear Spins by Optical Excitation of Spin-Forbidden Transitions in a Quantum Dot
Phys. Rev. Lett. 104, 066804 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
21.
2010

Ramsay A. J.; Gopal Achanta Venu; Gauger E. M.; Nazir A.; Lovett B. W.; Fox A. M.; Skolnick M. S.

Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots
Phys. Rev. Lett. 104, 017402 (2010)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
22.
2009

Jang Y. D.; Park J.; Lee D.; Mowbray D. J.; Skolnick M. S.; Liu H. Y.; Hopkinson M.; Hogg R. A.

Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots
Appl. Phys. Lett. 95, 171902 (2009)
Department of Physics, Chungnam National University, Daejeon 305-764, Republic of Korea
23.
2009

Krizhanovskii D. N.; Lagoudakis K. G.; Wouters M.; Pietka B.; Bradley R. A.; Guda K.; Whittaker D. M.; André R.; Richard M.; Deveaud-Plédran B.; Skolnick M. S.; Dang Le Si

Coexisting nonequilibrium condensates with long-range spatial coherence in semiconductor microcavities
Phys. Rev. B 80, 045317 (2009)
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
24.
2009

Boyle S. J.; Ramsay A. J.; Fox A. M.; Skolnick M. S.; Heberle A. P.; Hopkinson M.

Beating of Exciton-Dressed States in a Single Semiconductor InGaAs/GaAs Quantum Dot
Phys. Rev. Lett. 102, 207401 (2009)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
25.
2009

Makhonin M. N.; Skiba-Szymanska J.; Skolnick M. S.; Liu H.-Y.; Hopkinson M.; Tartakovskii A. I.

Voltage-controlled nuclear polarization switching in a single InxGa1-x;As quantum dot
Phys. Rev. B 79, 125318 (2009)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
26.
2009

Nikolaenko A. E.; Chekhovich E. A.; Makhonin M. N.; Drouzas I. W.; Van'kov A. B.; Skiba-Szymanska J.; Skolnick M. S.; Senellart P.; Martrou D.; Lemaître A.; Tartakovskii A. I.

Suppression of nuclear spin diffusion at a GaAs/AlxGa1-x;As interface measured with a single quantum-dot nanoprobe
Phys. Rev. B 79, 081303 (2009)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom
27.
2008

Jang Y. D.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Park J.; Lee D.; Liu H. Y.; Hopkinson M.; Hogg R. A.; Andreev A. D.

Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots
Appl. Phys. Lett. 93, 101903 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
28.
2008

Brown J.; Wells J.-P. R.; Kundys D. O.; Fox A. M.; Wang T.; Parbrook P. J.; Mowbray D. J.; Skolnick M. S.

Excitonic spin lifetimes in InGaN quantum wells and epilayers
J. Appl. Phys. 104, 053523 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
29.
2008

Makhonin M. N.; Tartakovskii A. I.; Ebbens A.; Skolnick M. S.; Russell A.; Fal'ko V. I.; Hopkinson M.

Nuclear spin pumping under resonant optical excitation in a quantum dot
Appl. Phys. Lett. 93, 073113 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
30.
2008

Boyle S. J.; Ramsay A. J.; Bello F.; Liu H. Y.; Hopkinson M.; Fox A. M.; Skolnick M. S.

Two-qubit conditional quantum-logic operation in a single self-assembled quantum dot
Phys. Rev. B 78, 075301 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
31.
2008

Love A. P. D.; André R.; Eastham P. R.; Skolnick M. S.; Bradley R.; Rizeiqi S. Al; Sanvitto D.; Bouchekioua R.; Whittaker D. M.; Krizhanovskii D. N.; Dang Le Si

Intrinsic Decoherence Mechanisms in the Microcavity Polariton Condensate
Phys. Rev. Lett. 101, 067404 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
32.
2008

Jang Y. D.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Park J.; Lee D.; Liu H. Y.; Steer M. J.; Hopkinson M.

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer
Appl. Phys. Lett. 92, 251905 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
33.
2008

Ramsay A. J.; Boyle S. J.; Kolodka R. S.; Oliveira J. B. B.; Skiba-Szymanska J.; Liu H. Y.; Hopkinson M.; Fox A. M.; Skolnick M. S.

Fast Optical Preparation, Control, and Readout of a Single Quantum Dot Spin
Phys. Rev. Lett. 100, 197401 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
34.
2008

Skiba-Szymanska J.; Chekhovich E. A.; Nikolaenko A. E.; Tartakovskii A. I.; Makhonin M. N.; Drouzas I.; Skolnick M. S.; Krysa A. B.

Overhauser effect in individual InP/;GaxIn1-x;P dots
Phys. Rev. B 77, 165338 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
35.
2008

Makhonin M. N.; Tartakovskii A. I.; Van'kov A. B.; Drouzas I.; Wright T.; Skiba-Szymanska J.; Russell A.; Fal'ko V. I.; Skolnick M. S.; Liu H.-Y.; Hopkinson M.

Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
Phys. Rev. B 77, 125307 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
36.
2008

Krizhanovskii D. N.; Gavrilov S. S.; Love A. P. D.; Sanvitto D.; Gippius N. A.; Tikhodeev S. G.; Kulakovskii V. D.; Whittaker D. M.; Skolnick M. S.; Roberts J. S.

Self-organization of multiple polariton-polariton scattering in semiconductor microcavities
Phys. Rev. B 77, 115336 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
37.
2008

Ng W. H.; Zibik E. A.; Wilson L. R.; Skolnick M. S.; Cockburn J. W.; Steer M. J.

Tuning of intraband absorption and photoresponse in self-assembled ;InAs/;GaAs quantum dots by thermal annealing
J. Appl. Phys. 103, 066101 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
38.
2008

Khalifa A. A.; Love A. P. D.; Krizhanovskii D. N.; Skolnick M. S.; Roberts J. S.

Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities
Appl. Phys. Lett. 92, 061107 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
39.
2008

Zibik E. A.; Grange T.; Carpenter B. A.; Ferreira R.; Bastard G.; Vinh N. Q.; Phillips P. J.; Steer M. J.; Hopkinson M.; Cockburn J. W.; Skolnick M. S.; Wilson L. R.

Intersublevel polaron dephasing in self-assembled quantum dots
Phys. Rev. B 77, 041307 (2008)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
40.
2007

Russell A.; Fal'ko Vladimir I.; Tartakovskii A. I.; Skolnick M. S.

Bistability of optically induced nuclear spin orientation in quantum dots
Phys. Rev. B 76, 195310 (2007)
Department of Physics, University of Lancaster, Lancaster LA1 4YB, United Kingdom
41.
2007

Fan W. H.; Olaizola S. M.; Wells J.-P. R.; Fox A. M.; Wang T.; Parbrook P. J.; Mowbray D. J.; Skolnick M. S.

Erratum: “Femtosecond studies of electron capture times in ;InGaN/;GaN multiple quantum wells” [Appl. Phys. Lett. ;84, 3052 (2004)]
Appl. Phys. Lett. 91, 099901 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
42.
2007

Daraei A.; Sanvitto D.; Timpson J. A.; Fox A. M.; Whittaker D. M.; Skolnick M. S.; Guimarães P. S. S.; Vinck H.; Tahraoui A.; Fry P. W.; Liew S. L.; Hopkinson M.

Control of polarization and mode mapping of small volume high Q micropillars
J. Appl. Phys. 102, 043105 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
43.
2007

Astratov V. N.; Yang S.; Lam S.; Jones B. D.; Sanvitto D.; Whittaker D. M.; Fox A. M.; Skolnick M. S.; Tahraoui A.; Fry P. W.; Hopkinson M.

Whispering gallery resonances in semiconductor micropillars
Appl. Phys. Lett. 91, 071115 (2007)
Department of Physics and Optical Science, Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, North Carolina 28223-0001
44.
2007

Kolodka R. S.; Ramsay A. J.; Fry P. W.; Ng W. K.; Tahraoui A.; Liu H. Y.; Hopkinson M.; Fox A. M.; Skolnick M. S.

Coherent control of single quantum dot exciton embedded in a photodiode
Journal of Modern Optics 54, 1717 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK
45.
2007

Ho Y.-L. D.; Hopkinson M.; Skolnick M. S.; Fox A. M.; Timpson J. A.; Heard P. J.; Rarity J. G.; Cryan M. J.; Hu C. Y.; Gibson R.; Tahraoui A.

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials
J. Vac. Sci. Technol. B 25, 1197 (2007)
Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1TR, United Kingdom
46.
2007

Krizhanovskii D. N.; Love A. P. D.; Sanvitto D.; Whittaker D. M.; Skolnick M. S.; Roberts J. S.

Interaction between a high-density polariton phase and the exciton environment in semiconductor microcavities
Phys. Rev. B 75, 233307 (2007)
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
47.
2007

Chalcraft A. R. A.; Lam S.; O'Brien D.; Krauss T. F.; Sahin M.; Szymanski D.; Sanvitto D.; Oulton R.; Skolnick M. S.; Fox A. M.; Whittaker D. M.; Liu H.-Y.; Hopkinson M.

Mode structure of the L3 photonic crystal cavity
Appl. Phys. Lett. 90, 241117 (2007)
Department of Physics and Astronomy, The University of Sheffield, Sheffield S3 7RH, United Kingdom
48.
2007

Kolodka R. S.; Fox A. M.; Liu H. Y.; Fry P. W.; Skiba-Szymanska J.; Ramsay A. J.; Skolnick M. S.

Inversion recovery of single quantum-dot exciton based qubit
Phys. Rev. B 75, 193306 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
49.
2007

Ballarini D.; Amo A.; Viña L.; Sanvitto D.; Skolnick M. S.; Roberts J. S.

Transition from the strong- to the weak-coupling regime in semiconductor microcavities: Polarization dependence
Appl. Phys. Lett. 90, 201905 (2007)
SEMICUAM, Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain;
50.
2007

Alyamani A.; Sanvitto D.; Khalifa A. A.; Skolnick M. S.; Wang T.; Ranalli F.; Parbrook P. J.; Tahraoui A.; Airey R.

GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates
J. Appl. Phys. 101, 093110 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
51.
2007

Zibik E. A.; Ng W. H.; Wilson L. R.; Skolnick M. S.; Cockburn J. W.; Gutierrez M.; Steer M. J.; Hopkinson M.

Effects of alloy intermixing on the lateral confinement potential in InAs/;GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy
Appl. Phys. Lett. 90, 163107 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
52.
2007

Whittaker D. M.; Guimaraes P. S. S.; Sanvitto D.; Vinck H.; Lam S.; Daraei A.; Timpson J. A.; Fox A. M.; Skolnick M. S.; Ho Y.-L. D.; Rarity J. G.; Hopkinson M.; Tahraoui A.

High Q modes in elliptical microcavity pillars
Appl. Phys. Lett. 90, 161105 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
53.
2007

Savelyev Artem V.; Karachinsky Leonid Ya.; Shkolnik Alexey S.; Pellegrini Sara; Gordeev Nikita Yu.; Tartakovskii Alexander I.; Evtikhiev Vadim P.; Zegrya Georgy G.; Maximov Mikhail V.; Ustinov Victor M.; Seisyan Ruben P.; Buller Gerald S.; Skolnick Maurice S.

Bipolar charging in quantum dots array
AIP Conf. Proc. 893, 987 (2007)
A.F. Ioffe Physico‐Technical Institute, Polytechnicheskaya 26, St.Petersburg, 194021, Russia;
54.
2007

Grange T.; Ferreira R.; Bastard G.; Zibik E. A.; Phillips P. J.; Wilson L. R.; Skolnick M. S.

Spin mixing for one and two electron states in quantum dots
AIP Conf. Proc. 893, 963 (2007)
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France;
55.
2007

Ballarini D.; Amo A.; Martin M. D.; Viña L.; Sanvitto D.; Skolnick M. S.; Roberts J. S.

Spin‐Dependent Strong‐ to Weak‐Coupling Transition in Semiconductor Microcavities
AIP Conf. Proc. 893, 1153 (2007)
SEMICUAM, Dept. Física de Materiales, Universidad Autónoma de Madrid, E‐28049 Madrid, Spain;
56.
2007

Ramsay A. J.; Kolodka R. S.; Bello F.; Fry P. W.; Ng W. K.; Tahraoui A.; Liu H. Y.; Hopkinson M.; Whittaker D. M.; Fox A. M.; Skolnick M. S.

Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse
Phys. Rev. B 75, 113302 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
57.
2007

Badcock T. J.; Royce R. J.; Mowbray D. J.; Skolnick M. S.; Liu H. Y.; Hopkinson M.; Groom K. M.; Jiang Q.

Low threshold current density and negative characteristic temperature 1.3 μ;m InAs self-assembled quantum dot lasers
Appl. Phys. Lett. 90, 111102 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
58.
2007

Zervos C.; Frogley M. D.; Phillips C. C.; Kundys D. O.; Wilson L. R.; Hopkinson M.; Skolnick M. S.

All-optical switching in quantum cascade lasers
Appl. Phys. Lett. 90, 053505 (2007)
Experimental Solid State Group, Physics Department, Imperial College, London SW7 2AZ, United Kingdom
59.
2007

Tartakovskii A. I.; Wright T.; Russell A.; Fal'ko V. I.; Van'kov A. B.; Skiba-Szymanska J.; Drouzas I.; Kolodka R. S.; Skolnick M. S.; Fry P. W.; Tahraoui A.; Liu H.-Y.; Hopkinson M.

Nuclear Spin Switch in Semiconductor Quantum Dots
Phys. Rev. Lett. 98, 026806 (2007)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom
60.
2007

Timpson J. A.; Sanvitto D.; Daraei A.; Guimaraes P. S. S.; Vinck H.; Lam S.; Whittaker D. M.; Skolnick M. S.; Fox A. M.; Hu C. Y.; Ho Y. -L. D.; Gibson R.; Rarity J. G.; Pellegrini S.; Gordon K. J.; Warburton R. E.; Buller G. S.; Tahraoui A.; Fry P. W.; Hopkinson M.

Single photon sources based upon single quantum dots in semiconductor microcavity pillars
Journal of Modern Optics 54, 453 (2007)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK
61.
2006

Wenus J.; Parashkov R.; Ceccarelli S.; Brehier A.; Lauret J.-S.; Skolnick M. S.; Deleporte E.; Lidzey D. G.

Hybrid organic-inorganic exciton-polaritons in a strongly coupled microcavity
Phys. Rev. B 74, 235212 (2006)
Department of Physics and Astronomy, The University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, United Kingdom
62.
2006

Kundys D. O.; Murzyn P.; Wells J.-P. R.; Tartakovskii A. I.; Skolnick M. S.; Dang Le Si; Lutsenko E. V.; Tarasuk N. P.; Lyublinskaya O. G.; Toropov A. A.; Ivanov S. V.

The dynamics of amplified spontaneous emission in CdSe/;ZnSe quantum dots
J. Appl. Phys. 100, 123510 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
63.
2006

Zervos C.; Frogley M. D.; Phillips C. C.; Kundys D. O.; Wilson L. R.; Cockburn J. W.; Hopkinson M.; Skolnick M. S.

Coherent near-infrared wavelength conversion in semiconductor quantum cascade lasers
Appl. Phys. Lett. 89, 183507 (2006)
Experimental Solid State Group, Physics Department, Imperial College, London SW7 2AZ, United Kingdom
64.
2006

Garcia-Déniz A. Z.; Krauss T. F.; Skolnick M. S.; Whittaker D. M.; Wells J.-P. R.; Kundys D. O.; Fox A. M.; Murzyn P.; Roberts J. S.

Ultrafast reflectivity modulation in AlxGa1-x;As/;InyAlxGa1-x-y;As multiple quantum well photonic crystal waveguides
Phys. Rev. B 74, 165327 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
65.
2006

Carpenter B. A.; Zibik E. A.; Sadowski M. L.; Wilson L. R.; Whittaker D. M.; Cockburn J. W.; Skolnick M. S.; Potemski M.; Steer M. J.; Hopkinson M.

Intraband magnetospectroscopy of singly and doubly charged n-type self-assembled quantum dots
Phys. Rev. B 74, 161302 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
66.
2006

Savvidis P. G.; Connolly L. G.; Skolnick M. S.; Lidzey D. G.; Baumberg J. J.

Ultrafast polariton dynamics in strongly coupled zinc porphyrin microcavities at room temperature
Phys. Rev. B 74, 113312 (2006)
Department of Physics & Astronomy, University of Southampton, SO17 1BJ, United Kingdom;
67.
2006

Krizhanovskii D. N.; Sanvitto D.; Love A. P. D.; Skolnick M. S.; Whittaker D. M.; Roberts J. S.

Dominant Effect of Polariton-Polariton Interactions on the Coherence of the Microcavity Optical Parametric Oscillator
Phys. Rev. Lett. 97, 097402 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
68.
2006

Liu H. Y.; Liew S. L.; Badcock T.; Mowbray D. J.; Skolnick M. S.; Ray S. K.; Choi T. L.; Groom K. M.; Stevens B.; Hasbullah F.; Jin C. Y.; Hopkinson M.; Hogg R. A.

p-doped 1.3 μ;mInAs/;GaAs quantum-dot laser with a low threshold current density and high differential efficiency
Appl. Phys. Lett. 89, 073113 (2006)
Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom
69.
2006

Olaizola S. M.; Fan W. H.; Hashemizadeh S. A.; Wells J.-P. R.; Mowbray D. J.; Skolnick M. S.; Fox A. M.; Parbrook P. J.

Time-resolved photoluminescence studies of carrier diffusion in GaN
Appl. Phys. Lett. 89, 072107 (2006)
Department of Physics and Astronomy, The University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, United Kingdom
70.
2006

Bristow A. D.; Kundys D. O.; García-Déniz A. Z.; Wells J.-P. R.; Fox A. M.; Skolnick M. S.; Whittaker D. M.; Tahraoui A.; Krauss T. F.; Roberts J. S.

Enhanced all-optical tuning of leaky eigenmodes in photonic crystal waveguides
Opt. Lett. 31, 2284 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, UK
71.
2006

Sanvitto D.; Skolnick M. S.; Ceccarelli S.; Whittaker D. M.; Krizhanovskii D. N.; Roberts J. S.

Spatial structure and stability of the macroscopically occupied polariton state in the microcavity optical parametric oscillator
Phys. Rev. B 73, 241308 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
72.
2006

Kundys D. O.; Wells J.-P. R.; Andreev A. D.; Hashemizadeh S. A.; Wang T.; Parbrook P. J.; Fox A. M.; Mowbray D. J.; Skolnick M. S.

Resolution of discrete excited states in InxGa1-x;N multiple quantum wells using degenerate four-wave mixing
Phys. Rev. B 73, 165309 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
73.
2006

Murzyn P.; Garcia-Deniz A. Z.; Kundys D. O.; Fox A. M.; Wells J.-P. R.; Whittaker D. M.; Skolnick M. S.; Krauss T. F.; Roberts J. S.

Control of the nonlinear carrier response time of AlGaAs photonic crystal waveguides by sample design
Appl. Phys. Lett. 88, 141104 (2006)
Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield S3 7RH, United Kingdom
74.
2006

Tartakovskii A. I.; Kolodka R. S.; Liu H. Y.; Migliorato M. A.; Hopkinson M.; Makhonin M. N.; Mowbray D. J.; Skolnick M. S.

Exciton fine structure splitting in dot-in-a-well structures
Appl. Phys. Lett. 88, 131115 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
75.
2006

Savelyev A. V.; Tartakovskii A. I.; Skolnick M. S.; Mowbray D. J.; Maximov M. V.; Ustinov V. M.; Seisyan R. P.

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection
Appl. Phys. Lett. 88, 111104 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
76.
2006

Krizhanovskii D. N.; Sanvitto D.; Shelykh I. A.; Glazov M. M.; Malpuech G.; Solnyshkov D. D.; Kavokin A.; Ceccarelli S.; Skolnick M. S.; Roberts J. S.

Rotation of the plane of polarization of light in a semiconductor microcavity
Phys. Rev. B 73, 073303 (2006)
Department of Physics & Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
77.
2006

Liu H. Y.; Steer M. J.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Suarez F.; Ng J. S.; Hopkinson M.; David J. P. R.

Room-temperature 1.6 μ;m light emission from InAs/;GaAs quantum dots with a thin GaAsSb cap layer
J. Appl. Phys. 99, 046104 (2006)
Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom
78.
2006

Daraei A.; Tahraoui A.; Sanvitto D.; Timpson J. A.; Fry P. W.; Hopkinson M.; Guimarães P. S. S.; Vinck H.; Whittaker D. M.; Skolnick M. S.; Fox A. M.

Control of polarized single quantum dot emission in high-quality-factor microcavity pillars
Appl. Phys. Lett. 88, 051113 (2006)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
79.
2005

Hashemizadeh S. A.; Wells J.-P. R.; Murzyn P.; Brown J.; Jones B. D.; Wang T.; Parbrook P. J.; Fox A. M.; Mowbray D. J.; Skolnick M. S.

Picosecond carrier dynamics in AlInGaN multiple quantum wells
Appl. Phys. Lett. 87, 232106 (2005)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
80.
2005

Krizhanovskii D. N.; Ebbens A.; Tartakovskii A. I.; Pulizzi F.; Wright T.; Skolnick M. S.; Hopkinson M.

Individual neutral and charged InxGa1-x;As-GaAs quantum dots with strong in-plane optical anisotropy
Phys. Rev. B 72, 161312 (2005)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
81.
2005

Liu H. Y.; Tey C. M.; Sellers I. R.; Hopkinson M.; Beanland R.; Skolnick M. S.; Mowbray D. J.; Badcock T. J.; Cullis A. G.

Mechanism for improvements of optical properties of 1.3-μ;mInAs/;GaAs quantum dots by a combined InAlAs–;InGaAs cap layer
J. Appl. Phys. 98, 083516 (2005)
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
82.
2005

Young R. J.; Stevenson R. M.; Shields A. J.; Atkinson P.; Cooper K.; Ritchie D. A.; Groom K. M.; Tartakovskii A. I.; Skolnick M. S.

Inversion of exciton level splitting in quantum dots
Phys. Rev. B 72, 113305 (2005)
Toshiba Research Europe Limited, 260 Cambridge Science Park, Cambridge CB4 0WE, United Kingdom;
83.
2005

Ebbens A.; Krizhanovskii D. N.; Tartakovskii A. I.; Pulizzi F.; Wright T.; Savelyev A. V.; Skolnick M. S.; Hopkinson M.

Optical orientation and control of spin memory in individual InGaAs quantum dots
Phys. Rev. B 72, 073307 (2005)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom
84.
2005

Rybchenko S. I.; Itskevich I. E.; Skolnick M. S.; Cahill J.; Tartakovskii A. I.; Hill G.; Hopkinson M.

Tuning of electronic coupling between self-assembled quantum dots
Appl. Phys. Lett. 87, 033104 (2005)
Department of Engineering, University of Hull, Kingston-upon-Hull, HU6 7RX, United Kingdom
85.
2005

Rybchenko S. I.; Itskevich I. E.; Cahill J.; Tartakovskii A. I.; Skolnick M. S.; Hill G.; Hopkinson M.

Electronic Coupling between Self‐Assembled Quantum Dots Tuned by High Pressure
AIP Conf. Proc. 772, 687 (2005)
Department of Engineering, University of Hull, Kingston‐upon‐Hull, HU6 7RX, United Kingdom;
86.
2005

Skolnick M. S.; Mowbray D. J.

Physics and Applications of Self‐Assembled Semiconductor Quantum Dots
AIP Conf. Proc. 772, 50 (2005)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, UK
87.
2005

Sellers I. R.; Liu H. Y.; Mowbray D. J.; Badcock T. J.; Groom K. M.; Hopkinson M.; Gutiérrez M.; Skolnick M. S.; Beanland R.; Childs D. T.; Robbins D. J.

Growth and Characterization of 1.3μm Multi‐Layer Quantum Dots Lasers Incorporating High Growth Temperature Spacer Layers
AIP Conf. Proc. 772, 1547 (2005)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
88.
2005

Sanvitto D.; Daraei A.; Tahraoui A.; Hopkinson M.; Fry P. W.; Whittaker D. M.; Skolnick M. S.

Observation of ultrahigh quality factor in a semiconductor microcavity
Appl. Phys. Lett. 86, 191109 (2005)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, Sheffield, United Kingdom
89.
2005

Liu H. Y.; Steer M. J.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Navaretti P.; Groom K. M.; Hopkinson M.; Hogg R. A.

Long-wavelength light emission and lasing from InAs/;GaAs quantum dots covered by a GaAsSb strain-reducing layer
Appl. Phys. Lett. 86, 143108 (2005)
Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom
90.
2005

Ray Sumon K.; Groom Kristian M.; Hogg Richard A.; Liu Hui-Yun; Sellers Ian R.; Hopkinson Mark; Badcock Tom J.; Ramsay Andrew J.; Mowbray David J.; Skolnick Maurice S.

Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 $\mu$m Quantum Dot Lasers
Jpn. J. Appl. Phys., Part 1 44, 2520 (2005)
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K. ;
91.
2004

Wenus Jakub; Connolly Liam G.; Whittaker David M.; Skolnick Maurice S.; Lidzey David G.

Tuning the exciton-photon coupling in a strongly coupled organic microcavity containing an optical wedge
Appl. Phys. Lett. 85, 5848 (2004)
Department of Physics and Astronomy, The University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, United Kingdom
92.
2004

Finley J. J.; Cullis A. G.; Liew S. L.; Skolnick M. S.; Mowbray D. J.; Tartakovskii A. I.; Oulton R.; Abstreiter G.; Vogl P.; Sabathil M.; Hopkinson M.

Quantum-confined Stark shifts of charged exciton complexes in quantum dots
Phys. Rev. B 70, 201308 (2004)
Walter Schottky Institut and Physik Department, Technische Universität München, D85748 Garching, Germany;
93.
2004

Tartakovskii A. I.; Makhonin M. N.; Sellers I. R.; Cahill J.; Andreev A. D.; Whittaker D. M.; Wells J-P. R.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Groom K. M.; Steer M. J.; Liu H. Y.; Hopkinson M.

Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
Phys. Rev. B 70, 193303 (2004)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom
94.
2004

Bristow A. D.; Kundys D. O.; García-Déniz A. Z.; Wells J.-P. R.; Fox A. M.; Skolnick M. S.; Whittaker D. M.; Tahraoui A.; Krauss T. F.; Roberts J. S.

Ultrafast nonlinear tuning of the reflection properties of AlGaAs photonic crystal waveguides by two-photon absorption
J. Appl. Phys. 96, 4729 (2004)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
95.
2004

Zibik E. A.; Steer M. J.; Skolnick M. S.; Cockburn J. W.; Wells J-P. R.; Carder D. A.; Phillips P. J.; Ferreira R.; Bastard G.; Green R. P.; Wilson L. R.; Hopkinson M.

Intraband relaxation via polaron decay in InAs self-assembled quantum dots
Phys. Rev. B 70, 161305 (2004)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
96.
2004

Tartakovskii A. I.; Makhonin M. N.; Cahill J.; Whittaker D. M.; Wells J-P. R.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Steer M. J.; Groom K. M.; Hopkinson M.

Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques
Appl. Phys. Lett. 85, 2226 (2004)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
97.
2004

Liu H. Y.; Sellers I. R.; Gutiérrez M.; Groom K. M.; Soong W. M.; Hopkinson M.; David J. P. R.; Beanland R.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.

Influences of the spacer layer growth temperature on multilayer InAs/;GaAs quantum dot structures
J. Appl. Phys. 96, 1988 (2004)
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom
98.
2004

Liu H. Y.; Sellers I. R.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Groom K. M.; Gutiérrez M.; Hopkinson M.; Ng J. S.; David J. P. R.; Beanland R.

Improved performance of 1.3 μ;m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
Appl. Phys. Lett. 85, 704 (2004)
EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield. S1 3JD, United Kingdom
99.
2004

Tartakovskii A. I.; Cahill J.; Makhonin M. N.; Whittaker D. M.; Wells J-P. R.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Groom K. M.; Steer M. J.; Hopkinson M.

Dynamics of Coherent and Incoherent Spin Polarizations in Ensembles of Quantum Dots
Phys. Rev. Lett. 93, 057401 (2004)
100.
2004

Wang T.; Lynch R. J.; Parbrook P. J.; Butté R.; Alyamani A.; Sanvitto D.; Whittaker D. M.; Skolnick M. S.

High-reflectivity AlxGa1-x;N/;AlyGa1-y;N distributed Bragg reflectors with peak wavelength around 350 ;nm
Appl. Phys. Lett. 85, 43 (2004)
EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
101.
2004

Fan W. H.; Olaizola S. M.; Wells J.-P. R.; Fox A. M.; Wang T.; Parbrook P. J.; Mowbray D. J.; Skolnick M. S.

Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells
Appl. Phys. Lett. 84, 3052 (2004)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
102.
2004

Oulton R.; Skolnick M. S.; Mowbray D. J.; Finley J. J.; Cahill J.; Ebbens A.; Tartakovskii A. I.; Hopkinson M.

Temperature-induced carrier escape processes studied in absorption of individual InxGa1-x;As quantum dots
Phys. Rev. B 69, 155323 (2004)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
103.
2003

Connolly L. G.; Lidzey D. G.; Butté R.; Adawi A. M.; Whittaker D. M.; Skolnick M. S.; Airey R.

Strong coupling in high-finesse organic semiconductor microcavities
Appl. Phys. Lett. 83, 5377 (2003)
Department of Physics and Astronomy, The University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, United Kingdom;
104.
2003

Oulton R.; Finley J. J.; Tartakovskii A. I.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Vasanelli A.; Ferreira R.; Bastard G.

Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots
Phys. Rev. B 68, 235301 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
105.
2003

Sellers I. R.; Liu H. Y.; Hopkinson M.; Mowbray D. J.; Skolnick M. S.

1.3 μm lasers with AlInAs-capped self-assembled quantum dots
Appl. Phys. Lett. 83, 4710 (2003)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom;
106.
2003

Liu H. Y.; Sellers I. R.; Hopkinson M.; Harrison C. N.; Mowbray D. J.; Skolnick M. S.

Engineering carrier confinement potentials in 1.3-μ;m InAs/GaAs quantum dots with InAlAs layers; Enhancement of the high-temperature photoluminescence intensity
Appl. Phys. Lett. 83, 3716 (2003)
Department of Electronic & Electrical Engineering, EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom;
107.
2003

Butté R.; Skolnick M. S.; Whittaker D. M.; Bajoni D.; Roberts J. S.

Dependence of stimulated scattering in semiconductor microcavities on pump power, angle, and energy
Phys. Rev. B 68, 115325 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
108.
2003

Bristow A. D.; Wells J.-P. R.; Fan W. H.; Fox A. M.; Skolnick M. S.; Whittaker D. M.; Tahraoui A.; Krauss T. F.; Roberts J. S.

Ultrafast nonlinear response of AlGaAs two-dimensional photonic crystal waveguides
Appl. Phys. Lett. 83, 851 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH United Kingdom;
109.
2003

Adawi A. M.; Zibik E. A.; Wilson L. R.; Lemaître A.; Cockburn J. W.; Skolnick M. S.; Hopkinson M.; Hill G.

Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots
Appl. Phys. Lett. 83, 602 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
110.
2003

Bristow A. D.; Whittaker D. M.; Astratov V. N.; Skolnick M. S.; Tahraoui A.; Krauss T. F.; Hopkinson M.; Croucher M. P.; Gehring G. A.

Defect states and commensurability in dual-period AlxGa1-x;As photonic crystal waveguides
Phys. Rev. B 68, 033303 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
111.
2003

Bruls D. M.; Koenraad P. M.; Salemink H. W. M.; Wolter J. H.; Hopkinson M.; Skolnick M. S.

Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy
Appl. Phys. Lett. 82, 3758 (2003)
COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven The Netherlands;
112.
2003

Adawi A. M.; Zibik E. A.; Wilson L. R.; Lemaître A.; Cockburn J. W.; Skolnick M. S.; Hopkinson M.; Hill G.; Liew S. L.; Cullis A. G.

Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots
Appl. Phys. Lett. 82, 3415 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH United Kingdom;
113.
2003

Krizhanovskii D. N.; Skolnick M. S.; Lidzey D. G.; Tartakovskii A. I.; Connolly L. G.; Butté R.; Walker S.

Photoluminescence emission and Raman scattering polarization in birefringent organic microcavities in the strong coupling regime
J. Appl. Phys. 93, 5003 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH United Kingdom;
114.
2003

Tartakovskii A. I.; Krizhanovskii D. N.; Malpuech G.; Emam-Ismail M.; Chernenko A. V.; Kavokin A. V.; Kulakovskii V. D.; Skolnick M. S.; Roberts J. S.

Giant enhancement of polariton relaxation in semiconductor microcavities by polariton-free carrier interaction: Experimental evidence and theory
Phys. Rev. B 67, 165302 (2003)
Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia;
115.
2003

Monte A. F. G.; Finley J. J.; Ashmore A. D.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.

Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers
J. Appl. Phys. 93, 3524 (2003)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
116.
2003

Liu H. Y.; Hopkinson M.; Harrison C. N.; Steer M. J.; Frith R.; Sellers I. R.; Mowbray D. J.; Skolnick M. S.

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure
J. Appl. Phys. 93, 2931 (2003)
Department of Electronic & Electrical Engineering, EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom;
117.
2003

Stevenson R. M.; Roberts J. S.; Skolnick M. S.; Astratov V. N.; Hill G.

Uncoupled excitons in semiconductor microcavities detected in resonant Raman scattering
Phys. Rev. B 67, 081301 (2003)
Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield S3 7RH, United Kingdom;
118.
2002

Tartakovskii A. I.; Groom K. M.; Adawi A. M.; Lemaître A.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.

Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments
Appl. Phys. Lett. 81, 4118 (2002)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
119.
2002

Hobson P. A.; Barnes W. L.; Lidzey D. G.; Gehring G. A.; Whittaker D. M.; Skolnick M. S.; Walker S.

Strong exciton–photon coupling in a low-Q all-metal mirror microcavity
Appl. Phys. Lett. 81, 3519 (2002)
Thin Film Photonics Group, School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom;
120.
2002

Krizhanovskii D. N.; Tartakovskii A. I.; Kulakovskii V. D.; Skolnick M. S.; Roberts J. S.

Threshold power and internal loss in the stimulated scattering of microcavity polaritons
Phys. Rev. B 66, 165329 (2002)
Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia;
121.
2002

Astratov V. N.; Adawi A. M.; Fricker S.; Skolnick M. S.; Whittaker D. M.; Pusey P. N.

Interplay of order and disorder in the optical properties of opal photonic crystals
Phys. Rev. B 66, 165215 (2002)
Department of Physics and Optical Science, University of North Carolina at Charlotte, Charlotte, North Carolina 28223;
122.
2002

Finley J. J.; Mowbray D. J.; Skolnick M. S.; Ashmore A. D.; Baker C.; Monte A. F. G.; Hopkinson M.

Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots
Phys. Rev. B 66, 153316 (2002)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
123.
2002

Bruls D. M.; Vugs J. W. A. M.; Koenraad P. M.; Salemink H. W. M.; Wolter J. H.; Hopkinson M.; Skolnick M. S.; Long Fei; Gill S. P. A.

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy
Appl. Phys. Lett. 81, 1708 (2002)
COBRA Inter-University Research Institute, Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;
124.
2002

Oulton R.; Finley J. J.; Ashmore A. D.; Gregory I. S.; Mowbray D. J.; Skolnick M. S.; Steer M. J.; Liew San-Lin; Migliorato M. A.; Cullis A. J.

Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot
Phys. Rev. B 66, 045313 (2002)
Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, United Kingdom;
125.
2002

Groom K. M.; Tartakovskii A. I.; Mowbray D. J.; Skolnick M. S.; Smowton P. M.; Hopkinson M.; Hill G.

Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement
Appl. Phys. Lett. 81, 1 (2002)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
126.
2002

Liu H. Y.; Sellers I. R.; Airey R. J.; Steer M. J.; Houston P. A.; Mowbray D. J.; Cockburn J.; Skolnick M. S.; Xu B.; Wang Z. G.

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
Appl. Phys. Lett. 80, 3769 (2002)
EPSRC Central Facility for III–V Semiconductors, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom;
127.
2002

Butté R.; Delalleau G.; Tartakovskii A. I.; Skolnick M. S.; Astratov V. N.; Baumberg J. J.; Malpuech G.; Di Carlo A.; Kavokin A. V.; Roberts J. S.

Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
Phys. Rev. B 65, 205310 (2002)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
128.
2002

Lidzey D. G.; Fox A. M.; Rahn M. D.; Skolnick M. S.; Agranovich V. M.; Walker S.

Experimental study of light emission from strongly coupled organic semiconductor microcavities following nonresonant laser excitation
Phys. Rev. B 65, 195312 (2002)
Department of Physics and Astronomy, The University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, United Kingdom
129.
2002

Lagoudakis P. G.; Savvidis P. G.; Baumberg J. J.; Whittaker D. M.; Eastham P. R.; Skolnick M. S.; Roberts J. S.

Stimulated spin dynamics of polaritons in semiconductor microcavities
Phys. Rev. B 65, 161310 (2002)
Department of Physics & Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom;
130.
2002

Rahn Mark D.; Fox A. Mark; Skolnick Maurice S.; Krauss Thomas F.

Propagation of ultrashort nonlinear pulses through two-dimensional AlGaAs high-contrast photonic crystal waveguides
J. Opt. Soc. Am. B 19, 716 (2002)
Department of Physics and Astronomy, The University of Sheffield, Sheffield S3 7RH, UK;
131.
2002

Tartakovskii A. I.; Krizhanovskii D. N.; Kurysh D. A.; Kulakovskii V. D.; Skolnick M. S.; Roberts J. S.

Polariton parametric scattering processes in semiconductor microcavities observed in continuous wave experiments
Phys. Rev. B 65, 081308 (2002)
Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia;
132.
2002

Savvidis P. G.; Skolnick M. S.; Whittaker D. M.; Porras D.; Baumberg J. J.; Roberts J. S.

Ring emission and exciton-pair scattering in semiconductor microcavities
Phys. Rev. B 65, 073309 (2002)
Department of Physics & Astronomy, University of Southampton, SO17 1BJ, United Kingdom;
133.
2002

Whittaker D. M.; Culshaw I. S.; Astratov V. N.; Skolnick M. S.

Photonic band structure of patterned waveguides with dielectric and metallic cladding
Phys. Rev. B 65, 073102 (2002)
University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom;
134.
2001

Migliorato M. A.; Wilson L. R.; Mowbray D. J.; Skolnick M. S.; Al-Khafaji M.; Cullis A. G.; Hopkinson M.

Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots
J. Appl. Phys. 90, 6374 (2001)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
135.
2001

Savvidis P. G.; Skolnick M. S.; Whittaker D. M.; Baumberg J. J.; Ciuti C.; Roberts J. S.

Off-branch polaritons and multiple scattering in semiconductor microcavities
Phys. Rev. B 64, 075311 (2001)
Department of Physics & Astronomy, University of Southampton, SO17 1BJ, United Kingdom;
136.
2001

Astratov V. N.; Adawi A. M.; Skolnick M. S.; Tikhomirov V. K.; Lyubin V.; Lidzey D. G.; Ariu M.; Reynolds A. L.

Opal photonic crystals infiltrated with chalcogenide glasses
Appl. Phys. Lett. 78, 4094 (2001)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
137.
2001

Wölfl F.; Ryan J. F.; Fox A. M.; Ashmore A. D.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.

Intensity noise in quantum-dot laser diodes
Appl. Phys. Lett. 78, 3577 (2001)
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, United Kingdom;
138.
2001

Lemaître A.; Ashmore A. D.; Finley J. J.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Krauss T. F.

Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots
Phys. Rev. B 63, 161309 (2001)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
139.
2001

Finley J. J.; Fry P. W.; Ashmore A. D.; Lemaître A.; Tartakovskii A. I.; Oulton R.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Buckle P. D.; Maksym P. A.

Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot
Phys. Rev. B 63, 161305 (2001)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
140.
2001

Tartakovskii A. I.; Emam-Ismail M.; Lidzey D. G.; Skolnick M. S.; Bradley D. D. C.; Walker S.; Agranovich V. M.

Raman scattering in strongly coupled organic semiconductor microcavities
Phys. Rev. B 63, 121302 (2001)
Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia
141.
2001

Finley J. J.; Hopkinson M.; Maksym P. A.; Itskevich I. E.; Skolnick M. S.; Mowbray D. J.; Lemaître A.; Ashmore A. D.; Krauss T. F.

Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots
Phys. Rev. B 63, 073307 (2001)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
142.
2001

Wilson L. R.; Cockburn J. W.; Steer M. J.; Carder D. A.; Skolnick M. S.; Hopkinson M.; Hill G.

Decreasing the emission wavelength of GaAs–AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers
Appl. Phys. Lett. 78, 413 (2001)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
143.
2000

Fry P. W.; Finley J. J.; Wilson L. R.; Lemaître A.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.; Clark J. C.

Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots
Appl. Phys. Lett. 77, 4344 (2000)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
144.
2000

Baumberg J. J.; Savvidis P. G.; Stevenson R. M.; Tartakovskii A. I.; Skolnick M. S.; Whittaker D. M.; Roberts J. S.

Parametric oscillation in a vertical microcavity: A polariton condensate or micro-optical parametric oscillation
Phys. Rev. B 62, R16247 (2000)
Department of Physics & Astronomy, University of Southampton, SO17 1BJ, United Kingdom;
145.
2000

Fry P. W.; Itskevich I. E.; Parnell S. R.; Finley J. J.; Wilson L. R.; Schumacher K. L.; Mowbray D. J.; Skolnick M. S.; Al-Khafaji M.; Cullis A. G.; Hopkinson M.; Clark J. C.; Hill G.

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
Phys. Rev. B 62, 16784 (2000)
Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom;
146.
2000

Savvidis P. G.; Baumberg J. J.; Stevenson R. M.; Skolnick M. S.; Whittaker D. M.; Roberts J. S.

Asymmetric angular emission in semiconductor microcavities
Phys. Rev. B 62, R13278 (2000)
Department of Physics & Astronomy, University of Southampton, SO17 1BJ, United Kingdom;
147.
2000

Stevenson R. M.; Astratov V. N.; Baumberg J. J.; Savvidis P. G.; Tartakovskii A. I.; Emam-Ismail M.; Whittaker D. M.; Skolnick M. S.; Roberts J. S.

Continuous Wave Observation of Massive Polariton Redistribution by Stimulated Scattering in Semiconductor Microcavities
Phys. Rev. Lett. 85, 3680 (2000)
148.
2000

Tartakovskii A. I.; Emam-Ismail M.; Stevenson R. M.; Skolnick M. S.; Astratov V. N.; Whittaker D. M.; Baumberg J. J.; Roberts J. S.

Relaxation bottleneck and its suppression in semiconductor microcavities
Phys. Rev. B 62, R2283 (2000)
Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia
149.
2000

Emam-Ismail M.; Astratov V. N.; Skolnick M. S.; Whittaker D. M.; Roberts J. S.

Asymmetric photoluminescence spectra from excitons in a coupled microcavity
Phys. Rev. B 62, 1552 (2000)
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
150.
2000

Astratov V. N.; Stevenson R. M.; Culshaw I. S.; Whittaker D. M.; Skolnick M. S.; Krauss T. F.; De La Rue R. M.

Heavy photon dispersions in photonic crystal waveguides
Appl. Phys. Lett. 77, 178 (2000)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
151.
2000

Savvidis P. G.; Whittaker D. M.; Skolnick M. S.; Stevenson R. M.; Baumberg J. J.; Roberts J. S.

Angle-Resonant Stimulated Polariton Amplifier
Phys. Rev. Lett. 84, 1547 (2000)
152.
2000

Wilson L. R.; Keightley P. T.; Cockburn J. W.; Skolnick M. S.; Clark J. C.; Grey R.; Hill G.

Controlling the performance of GaAs–AlGaAs quantum-cascade lasers via barrier height modifications
Appl. Phys. Lett. 76, 801 (2000)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
153.
2000

Fry P. W.; Hill G.; Cullis A. G.; David J. P. R.; Al-Khafaji M.; Hopkinson M.; Maksym P. A.; Larkin I. A.; Wilson L. R.; O'Reilly E. P.; Barker J. A.; Finley J. J.; Skolnick M. S.; Mowbray D. J.; Itskevich I. E.; Clark J. C.

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
Phys. Rev. Lett. 84, 733 (2000)
154.
2000

Fry P. W.; Harris L.; Parnell S. R.; Finley J. J.; Ashmore A. D.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.; Clark J. C.

Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
J. Appl. Phys. 87, 615 (2000)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
155.
1999

Astratov V. N.; Whittaker D. M.; Krauss T. F.; Skolnick M. S.; Stevenson R. M.; Culshaw I. S.; De La Rue R. M.

Photonic band-structure effects in the reflectivity of periodically patterned waveguides
Phys. Rev. B 60, R16255 (1999)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
156.
1999

Harris L.; Ashmore A. D.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.; Clark J.

Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
Appl. Phys. Lett. 75, 3512 (1999)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
157.
1999

Tartakovskii A. I.; Kulakovskii V. D.; Krizhanovskii D. N.; Skolnick M. S.; Astratov V. N.; Armitage A.; Roberts J. S.

Nonlinearities in emission from the lower polariton branch of semiconductor microcavities
Phys. Rev. B 60, R11293 (1999)
Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia;
158.
1999

Wilson L. R.; Keightley P. T.; Cockburn J. W.; Duck J. P.; Skolnick M. S.; Clark J. C.; Hill G.; Moran M.; Grey R.

Spectroscopic determination of the electron distribution in a quantum cascade structure
Appl. Phys. Lett. 75, 2079 (1999)
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;
159.
1999

Buckle P. D.; Dawson P.; Hall S. A.; Chen X.; Steer M. J.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots
J. Appl. Phys. 86, 2555 (1999)
Department of Physics, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester, M60 1QD United Kingdom;
160.
1999

Itskevich I. E.; Skolnick M. S.; Mowbray D. J.; Trojan I. A.; Lyapin S. G.; Wilson L. R.; Steer M. J.; Hopkinson M.; Eaves L.; Main P. C.

Excited states and selection rules in self-assembled InAs/GaAs quantum dots
Phys. Rev. B 60, R2185 (1999)
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia
161.
1999

Lidzey D. G.; Skolnick M. S.; Armitage A.; Virgili T.; Bradley D. D. C.; Walker S.

Room Temperature Polariton Emission from Strongly Coupled Organic Semiconductor Microcavities
Phys. Rev. Lett. 82, 3316 (1999)
Department of Physics and Astronomy, The University of Sheffield, Hicks Building, Hounsfield Road, Sheffield, S3 7RH, United Kingdom
162.
1999

Opher-Lipson M.; Cohen E.; Armitage A.; Skolnick M. S.; Fisher T. A.; Roberts J. S.; Pfeiffer L. N.

Confined 1S excitons, Landau transitions, and cavity mode coupling in GaAs microcavities
Phys. Rev. B 59, 10261 (1999)
Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel;
163.
1999

Panzarini Giovanna; Andreani Lucio Claudio; Armitage A.; Baxter D.; Skolnick M. S.; Astratov V. N.; Roberts J. S.; Kavokin Alexey V.; Vladimirova Maria R.; Kaliteevski M. A.

Exciton-light coupling in single and coupled semiconductor microcavities: Polariton dispersion and polarization splitting
Phys. Rev. B 59, 5082 (1999)
Istituto Nazionale per la Fisica della Materia — Dipartimento di Fisica “A. Volta,” Università di Pavia, via Bassi 6, 27100 Pavia, Italy;
164.
1998

Armitage A.; Skolnick M. S.; Kavokin A. V.; Whittaker D. M.; Astratov V. N.; Gehring G. A.; Roberts J. S.

Polariton-induced optical asymmetry in semiconductor microcavities
Phys. Rev. B 58, 15367 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
165.
1998

Tribe W. R.; Steer M. J.; Forshaw A. N.; Schumacher K. L.; Mowbray D. J.; Whittaker D. M.; Skolnick M. S.; Roberts J. S.; Hill G.

Observation of wire width fluctuations in the optical spectra of GaAs–AlGaAs V-groove quantum wires
Appl. Phys. Lett. 73, 3420 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
166.
1998

Finley J. J.; Pate M. A.; Hill G.; Grey R.; Roberts G. A.; Cockburn J. W.; Skolnick M. S.; Teissier R. J.; Planel R.

Role of the X minimum in transport through AlAs single-barrier structures
Phys. Rev. B 58, 10619 (1998)
Department of Physics, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
167.
1998

Harris L.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.

Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
Appl. Phys. Lett. 73, 969 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
168.
1998

Roberts G. A.; Finley J. J.; Skolnick M. S.; Eaves L.; Cockburn J. W.; Larkin I. A.; Henini M.; Hill G.

Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures
Phys. Rev. B 58, R4242 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
169.
1998

Armitage A.; Kaliteevski M. A.; Kavokin A. V.; Roberts J. S.; Fisher T. A.; Andreani L. C.; Panzarini G.; Whittaker D. M.; Astratov V. N.; Skolnick M. S.; Vladimirova M. R.

Optically induced splitting of bright excitonic states in coupled quantum microcavities
Phys. Rev. B 57, 14877 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
170.
1998

Li Y. B.; Cockburn J. W.; Skolnick M. S.; Duck J. P.; Birkett M. J.; Larkin I. A.; Grey R.; Hill G.; Hopkinson M.

Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure
Appl. Phys. Lett. 72, 2141 (1998)
Department of Physics, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
171.
1998

Li Y. B.; Cockburn J. W.; Duck J. P.; Birkett M. J.; Skolnick M. S.; Larkin I. A.; Hopkinson M.; Grey R.; Hill G.

Photoluminescence spectroscopy of intersubband population inversion in a GaAs/AlxGa1-x;As triple-barrier tunneling structure
Phys. Rev. B 57, 6290 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
172.
1998

Wilson L. R.; Mowbray D. J.; Skolnick M. S.; Morifuji M.; Steer M. J.; Larkin I. A.; Hopkinson M.

Magneto-optical studies of self-organized InAs/GaAs quantum dots
Phys. Rev. B 57, R2073 (1998)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
173.
1997

Tribe W. R.; Baxter D.; Skolnick M. S.; Mowbray D. J.; Fisher T. A.; Roberts J. S.

In- and out-going resonant Raman scattering from the cavity polaritons of semiconductor quantum microcavities
Phys. Rev. B 56, 12429 (1997)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
174.
1997

Baxter D.; Skolnick M. S.; Armitage A.; Astratov V. N.; Whittaker D. M.; Fisher T. A.; Roberts J. S.; Mowbray D. J.; Kaliteevski M. A.

Polarization-dependent phenomena in the reflectivity spectra of semiconductor quantum microcavities
Phys. Rev. B 56, R10032 (1997)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
175.
1997

Lidzey D. G.; Bradley D. D. C.; Pate M. A.; David J. P. R.; Whittaker D. M.; Fisher T. A.; Skolnick M. S.

Mapping the confined optical field in a microcavity via the emission from a conjugated polymer
Appl. Phys. Lett. 71, 744 (1997)
Department of Physics, Centre for Molecular Materials, The University of Sheffield, Hicks Building, Sheffield, S3 7RH, United Kingdom
176.
1997

Wilson L. R.; Mowbray D. J.; Skolnick M. S.; Astratov V. N.; Peggs D. W.; Rees G. J.; David J. P. R.; Grey R.; Hill G.; Pate M. A.

Electrical and optical bistability in InxGa1-x;As-GaAs piezoelectric quantum wells
Phys. Rev. B 55, R16045 (1997)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
177.
1997

Armitage A.; Fisher T. A.; Skolnick M. S.; Whittaker D. M.; Kinsler P.; Roberts J. S.

Exciton polaritons in semiconductor quantum microcavities in a high magnetic field
Phys. Rev. B 55, 16395 (1997)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
178.
1997

Mowbray David J.; Kowalski Olgierd P.; Cockburn John W.; Skolnick Maurice S.; Hopkinson Mark; David John P. R.

Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets
Proc. SPIE Int. Soc. Opt. Eng. 3001, 135 (1997)
Univ. of Sheffield (United Kingdom)
179.
1997

Tribe W. R.; Steer M. J.; Mowbray D. J.; Skolnick M. S.; Forshaw A. N.; Roberts J. S.; Hill G.; Pate M. A.; Whitehouse C. R.; Williams G. M.

Emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires
Appl. Phys. Lett. 70, 993 (1997)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
180.
1997

Cockburn J. W.; Finley J. J.; Skolnick M. S.; Wisniewski P.; Grey R.; Hill G.; Pate M. A.

Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices
Appl. Phys. Lett. 70, 622 (1997)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
181.
1996

Steer M. J.; Mowbray D. J.; Tribe W. R.; Skolnick M. S.; Sturge M. D.; Hopkinson M.; Cullis A. G.; Whitehouse C. R.; Murray R.

Electronic energy levels and energy relaxation mechanisms in self‐organized InAs/GaAs quantum dots
Phys. Rev. B 54, 17738 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
182.
1996

Whittaker D. M.; Kinsler P.; Fisher T. A.; Skolnick M. S.; Armitage A.; Afshar A. M.; Sturge M. D.; Roberts J. S.

Motional Narrowing in Semiconductor Microcavities
Phys. Rev. Lett. 77, 4792 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
183.
1996

Teissier R.; Finley J. J.; Skolnick M. S.; Cockburn J. W.; Pelouard J.-L.; Grey R.; Hill G.; Pate M. A.; Planel R.

Experimental determination of Γ‐;X intervalley transfer mechanisms in GaAs/AlAs heterostructures
Phys. Rev. B 54, R8329 (1996)
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Avenue Henri Ravera, 92225 Bagneux, France;
184.
1996

Finley J. J.; Teissier R. J.; Skolnick M. S.; Cockburn J. W.; Grey R.; Hill G.; Pate M. A.

Resonant Γ‐;X‐Γ magnetotunneling in GaAs‐AlAs‐GaAs heterostructures
Phys. Rev. B 54, R5251 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
185.
1996

Cockburn J. W.; Finley J. J.; Wisniewski P.; Skolnick M. S.; Teissier R.; Mowbray D. J.; Grey R.; Hill G.; Pate M. A.

Electroluminescence spectroscopy of intervalley scattering and hot‐hole transport in a GaAs/Al;xGa1-;xAs tunneling structure
Phys. Rev. B 54, 4472 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
186.
1996

Kowalski O. P.; Wegerer R. M.; Mowbray D. J.; Skolnick M. S.; Button C. C.; Roberts J. S.; Hopkinson M.; David J. P. R.; Hill G.

Optical spectroscopic observation of spontaneous long range ordering in AlGaInP
Appl. Phys. Lett. 68, 3266 (1996)
Department of Physics, University of Sheffield, Sheffield, S3 7RH, United Kingdom;
187.
1996

Cockburn J. W.; Buckle P. D.; Skolnick M. S.; Birkett M. J.; Teissier R.; Smith G. W.

Cross‐barrier recombination in a GaAs/AlGaAs double‐barrier resonant tunneling structure
J. Appl. Phys. 79, 8844 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
188.
1996

Buckle P. D.; Cockburn J. W.; Skolnick M. S.; Grey R.; Hill G.; Pate M. A.

Magnetic‐field‐induced modulation of intersubband scattering in a double‐barrier resonant‐tunneling structure
Phys. Rev. B 53, 13651 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
189.
1996

Fisher T. A.; Skolnick Maurice S.; Afshar A. M.; Whittaker D. M.; Kinsler P.; Roberts John S.; Hill Geoff; Pate M. A.

Tuning of the exciton-photon coupling in semiconductor quantum microcavities by external electric and magnetic fields
Proc. SPIE Int. Soc. Opt. Eng. 2694, 76 (1996)
Univ. of Sheffield (United Kingdom)
190.
1996

Fisher T. A.; Afshar A. M.; Skolnick M. S.; Whittaker D. M.; Roberts J. S.

Vacuum Rabi coupling enhancement and Zeeman splitting in semiconductor quantum microcavity structures in a high magnetic field
Phys. Rev. B 53, R10469 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
191.
1996

Kowalski O. P.; Cockburn J. W.; Mowbray D. J.; Skolnick M. S.; Dawson M. D.; Duggan G.; Kean A. H.

Hydrostatic‐pressure determination of tensile‐strained Ga;xIn1-;xP‐(Al;yGa1-;y)0.52In0.48P quantum‐well band offsets
Phys. Rev. B 53, 10830 (1996)
Department of Physics, University of Sheffield, Sheffield S3 7RH United Kingdom
192.
1996

David J. P. R.; Sale T. E.; Pabla A. S.; Rodríguez-Gironés P. J.; Woodhead J.; Grey R.; Rees G. J.; Robson P. N.; Skolnick M. S.; Hogg R. A.

Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p‐;i‐;n structures
Appl. Phys. Lett. 68, 820 (1996)
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
193.
1995

Peggs D. W.; Skolnick M. S.; Whittaker D. M.; Hogg R. A.; Willcox A. R. K.; Mowbray D. J.; Grey R.; Rees G. J.; Hart L.; Hopkinson M.; Hill G.; Pate M. A.

Observation of Wannier‐Stark ladder transitions in In;xGa1-;xAs‐GaAs piezoelectric superlattices
Phys. Rev. B 52, 14340 (1995)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
194.
1995

Fisher T. A.; Lidzey D. G.; Pate M. A.; Weaver M. S.; Whittaker D. M.; Skolnick M. S.; Bradley D. D. C.

Electroluminescence from a conjugated polymer microcavity structure
Appl. Phys. Lett. 67, 1355 (1995)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
195.
1995

DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Williams J. E.; Meehan K.; Kurtz Sarah R.; Olson J. M.; Schneider R. P.; Wu M. C.; Hopkinson M.

Band gap of ‘‘completely disordered’’ Ga;0.52In0.48P
Appl. Phys. Lett. 66, 3185 (1995)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
196.
1995

Świerkowski L.; Szymański J.; Simmonds P. E.; Fisher T. A.; Skolnick M. S.

Theory of photoluminescence of magnetopolarons in quantum wells containing high densities of electrons
Phys. Rev. B 51, 9830 (1995)
School of Physics, The University of New South Wales, Sydney 2052, Australia
197.
1995

Teissier R.; Finley J. J.; Skolnick M. S.; Cockburn J. W.; Grey R.; Hill G.; Pate M. A.

Electroluminescence spectroscopy in a high magnetic field of the ballistic‐electron energy distribution in single‐barrier heterostructures
Phys. Rev. B 51, 5562 (1995)
Department of Physics, University of Sheffield, Sheffield S37RH, United Kingdom
198.
1995

Kowalski O. P.; Cockburn J. W.; Mowbray D. J.; Skolnick M. S.; Teissier R.; Hopkinson M.

GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements
Appl. Phys. Lett. 66, 619 (1995)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
199.
1995

Fisher T. A.; Afshar A. M.; Whittaker D. M.; Skolnick M. S.; Roberts J. S.; Hill G.; Pate M. A.

Electric‐field and temperature tuning of exciton‐photon coupling in quantum microcavity structures
Phys. Rev. B 51, 2600 (1995)
Department of Physics, University of Sheffield, Sheffield S3∥7RH, United Kingdom;
200.
1994

Fisher T. A.; Buckle P. D.; Simmonds P. E.; Teissier R. J.; Skolnick M. S.; White C. R. H.; Whittaker D. M.; Eaves L.; Usher B.; Kemeny P. C.; Grey R.; Hill G.; Pate M. A.

Use of a narrow‐gap prewell for the optical study of charge buildup and the Fermi‐energy edge singularity in a double‐barrier resonant‐tunneling structure
Phys. Rev. B 50, 18469 (1994)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
201.
1994

Sale T. E.; Woodhead J.; Rees G. J.; Grey R.; David J. P. R.; Pabla A. S.; Rodriguez-Gíronés P. J.; Robson P. N.; Hogg R. A.; Skolnick M. S.

Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111];B axis
J. Appl. Phys. 76, 5447 (1994)
Department of Electronic and Electrical Engineering, University of Sheffield, P.O. Box 600, Mappin Street, Sheffield S1 4DU, United Kingdom
202.
1994

Skolnick M. S.; Nash K. J.; Saker M. K.; Bass S. J.

Final‐state excitations in the photoluminescence spectra of In;xGa1-;xAs‐InP quantum wells at low and high carrier density
Phys. Rev. B 50, 11771 (1994)
Department of Physics, University of Sheffield, Sheffield S3∥7RH, United Kingdom;
203.
1994

Simmonds P. E.; Smith G. W.; Sobkowicz P.; Tagg W. I. E.; Skolnick M. S.; Birkett M. J.; Whittaker D. M.

Exciton binding energies in shallow GaAs‐Al;yGa1-;yAs quantum wells
Phys. Rev. B 50, 11251 (1994)
Department of Physics, University of Sheffield, Sheffield S37RH, United Kingdom
204.
1994

Dawson Martin D.; Najda S. P.; Skolnick M. S.; Kowalski O. P.; Mowbray D. J.; Duggan Geoffrey; Kean Alistair H.; Hopkinson M.

Measurement of the direct energy gap of Al0.5In0.5P: Implications for the band discontinuity at Ga1-;xInxP/AlyIn1-;yP heterojunctions
Phys. Rev. B 50, 11190 (1994)
Sharp Laboratories of Europe, Ltd., Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, United Kingdom
205.
1994

Saker M. K.; Whittaker D. M.; Skolnick M. S.; McConville C. F.; Whitehouse C. R.; Barnett S. J.; Pitt A. D.; Cullis A. G.; Williams G. M.

Demonstration of quantum confinement in InSb‐In;1-;xAlxSb multiquantum wells using photoluminescence spectroscopy
Appl. Phys. Lett. 65, 1118 (1994)
DRA Malvern, St. Andrews Road, Great Malvern, Worcestershire, WR14 3PS, United Kingdom
206.
1994

Teissier R.; Hill G.; Grey R.; Finley J. J.; Skolnick M. S.; Buckle P. D.; Cockburn J. W.; Pate M. A.

Observation of ballistic transport in double‐barrier resonant‐tunneling structures by electroluminescence spectroscopy
Phys. Rev. B 50, 4885 (1994)
Department of Physics, University of Sheffield, Sheffield S3∥7RH, United Kingdom;
207.
1994

Skolnick M. S.; Whittaker D. M.; Fisher T. A.; Simmonds P. E.

Comment on ‘‘Excitonic recombination of degenerate two‐dimensional electrons with localized photoexcited holes in a single heterojunction quantum well’’
Phys. Rev. Lett. 73, 774 (1994)
Department of Physics, University of Sheffield, Sheffield, S3 7RH, United Kingdom
208.
1994

Mowbray D. J.; Kowalski O. P.; Hopkinson M.; Skolnick M. S.; David J. P. R.

Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy
Appl. Phys. Lett. 65, 213 (1994)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
209.
1994

DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Williams J. E.; Meehan K.; Kurtz Sarah R.; Olson J. M.; Wu M. C.; Hopkinson M.

The band gap of ‘‘perfectly disordered’’ Ga;0.52In0.48P
AIP Conf. Proc. 306, 529 (1994)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
210.
1994

Cockburn J. W.; Skolnick M. S.; Whittaker D. M.; Buckle P. D.; Willcox A. R. K.; Smith G. W.

Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure
Appl. Phys. Lett. 64, 2400 (1994)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
211.
1994

Arent D. J.; Alonso R. G.; Horner G. S.; Levi D.; Bode M.; Mascarenhas A.; Olson J. M.; Yin X.; DeLong M. C.; SpringThorpe A. J.; Majeed A.; Mowbray D. J.; Skolnick M. S.

Optical properties of ordered and randomly disordered AlAs/GaAs short‐period superlattices
Phys. Rev. B 49, 11173 (1994)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
212.
1994

Mowbray D. J.; Kowalski O. P.; Skolnick M. S.; DeLong M. C.; Hopkinson M.; David J. P. R.; Cullis A. G.

Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells
J. Appl. Phys. 75, 2029 (1994)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom;
213.
1993

Fisher T. A.; Simmonds P. E.; Skolnick M. S.; Martin A. D.; Smith R. S.

Fermi‐energy edge singularity and excitonic enhancement associated with the second subband in asymmetric modulation‐doped quantum wells
Phys. Rev. B 48, 14253 (1993)
Department of Physics, University of Wollongong, Wollongong, New South Wales 2500, Australia
214.
1993

Hogg R. A.; Fisher T. A.; Pate M. A.; Hill G.; Sanchez-Rojas J. L.; Woodhead J.; Grey R.; Rees G. J.; Pabla A. S.; David J. P. R.; Mowbray D. J.; Skolnick M. S.; Whittaker D. M.; Willcox A. R. K.; Robson P. N.

Piezoelectric‐field effects on transition energies, oscillator strengths, and level widths in (111);B‐grown (In,Ga)As/GaAs multiple quantum wells
Phys. Rev. B 48, 8491 (1993)
Department of Physics, University of Sheffield, Sheffield, S3 7RH, United Kingdom
215.
1993

Tagg W. I. E.; White C. R. H.; Skolnick M. S.; Eaves L.; Emeny M. T.; Whitehouse C. R.

Elastic and inelastic tunneling in a strained‐layer double‐barrier resonant‐tunneling structure
Phys. Rev. B 48, 4487 (1993)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
216.
1993

Emeny M. T.; Skolnick M. S.; Whitehouse C. R.; Hayes D. G.; Calcott P. D. J.; Higgs A. W.

Optimization of the growth parameters for the molecular‐beam epitaxial growth of strained In;0.16Ga0.84As/Al0.33Ga0.67As single quantum‐well structures
Appl. Phys. Lett. 63, 824 (1993)
DRA Electronics Division (RSRE), St. Andrews Road, Malvern, Worcestershire, WR14 3PS, United Kingdom
217.
1993

Pabla A. S.; Sanchez-Rojas J. L.; Woodhead J.; Grey R.; David J. P. R.; Rees G. J.; Hill G.; Pate M. A.; Robson P. N.; Hogg R. A.; Fisher T. A.; Willcox A. R. K.; Whittaker D. M.; Skolnick M. S.; Mowbray D. J.

Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs
Appl. Phys. Lett. 63, 752 (1993)
Department of Electronic and Electrical Engineering, University of Sheffield, P. O. Box 600, Sheffield, S1 4DU, United Kingdom
218.
1993

Nash K. J.; Skolnick M. S.; Saker M. K.; Bass S. J.

Many body shakeup in quantum well luminescence spectra
Phys. Rev. Lett. 70, 3115 (1993)
Defence Research Agency (RSRE), St. Andrew’s Road, Malvern, Worcestershire, WR14 3PS, United Kingdom;
219.
1993

DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Hopkinson M.; David J. P. R.; Taylor P. C.; Kurtz Sarah R.; Olson J. M.

Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P
J. Appl. Phys. 73, 5163 (1993)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
220.
1993

Skolnick M. S.; Mowbray D. J.; Whittaker D. M.; Smith R. S.

Longitudinal‐optical phonon and shake‐up excitations in the recombination spectra of semiconductor quantum wells
Phys. Rev. B 47, 6823 (1993)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
221.
1992

DeLong M. C.; Hogg R. A.; Mowbray D. J.; Hopkinson M.; Skolnick M. S.; Taylor P. C.; Olson J. M.; Kurtz Sarah R.; Kibbler A. E.

Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P
AIP Conf. Proc. 268, 332 (1992)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
222.
1992

Mowbray D. J.; Hogg R. A.; Skolnick M. S.; DeLong M. C.; Kurtz S. R.; Olson J. M.

Valence‐band splitting in ordered Ga;0.5In0.5P measured by polarized photoluminescence excitation spectroscopy
Phys. Rev. B 46, 7232 (1992)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
223.
1992

Cockburn J. W.; Skolnick M. S.; David J. P. R.; Grey R.; Hill G.; Pate M. A.

Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures
Appl. Phys. Lett. 61, 825 (1992)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
224.
1992

Tagg W. I. E.; Skolnick M. S.; Emeny M. T.; Higgs A. W.; Whitehouse C. R.

Optical spectroscopy of a double‐barrier resonant‐tunneling structure containing a narrow‐gap, strained‐layer, quantum‐well region
Phys. Rev. B 46, 1505 (1992)
Department of Physics, University of Sheffield, Sheffield S3∥7RH, United Kingdom;
225.
1992

Cockburn J. W.; Hill G.; Grey R.; Hogg R. A.; Tagg W. I. E.; Whittaker D. M.; Skolnick M. S.; Buckle P. D.; Pate M. A.

Electroluminescence recombination from excited‐state carrier populations in double‐barrier resonant‐tunneling structures
Phys. Rev. B 45, 13757 (1992)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
226.
1992

Simmonds P. E.; Skolnick M. S.; Fisher T. A.; Nash K. J.; Smith R. S.

Hole‐quasiparticle resonant polaron coupling in quantum wells containing high densities of free carriers
Phys. Rev. B 45, 9497 (1992)
Department of Physics, University of Wollongong, Wollongong, New South Wales 2500, Australia
227.
1992

White C. R. H.; Hill G.; Hughes O. H.; Henini M.; Leadbeater M. L.; Eaves L.; Skolnick M. S.; Pate M. A.

Optical investigation of a very asymmetric double‐barrier resonant‐tunneling structure
Phys. Rev. B 45, 6721 (1992)
Department of Physics, University of Nottingham, Nottingham NG7∥2RD, United Kingdom;
228.
1991

Hayes D. G.; Bass S. J.; Taylor L. L.; Simmonds P. E.; Whittaker D. M.; Skolnick M. S.; Eaves L.

Landau‐level pinning in wide modulation‐doped quantum‐well structures in the integer quantum Hall regime
Phys. Rev. B 44, 3436 (1991)
Electronics Division of the Defence Research Agency, Malvern, Worcestershire WR14 3PS, United Kingdom
229.
1991

Whittaker D. M.; Skolnick M. S.; Simmonds P. E.; Fisher T. A.; Smith R. S.

Magnetic‐field‐induced indirect gap in a modulation‐doped quantum well
Phys. Rev. Lett. 67, 887 (1991)
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire, WR14∥3PS, United Kingdom;
230.
1991

Spain I. L.; Skolnick M. S.; Smith G. W.; Saker M. K.; Whitehouse C. R.

Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality
Phys. Rev. B 43, 14091 (1991)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom
231.
1991

White C. R. H.; Skolnick M. S.; Eaves L.; Leadbeater M. L.

Electroluminescence and impact ionization phenomena in a double‐barrier resonant tunneling structure
Appl. Phys. Lett. 58, 1164 (1991)
RSRE, St. Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom, and Department of Physics, University of Nottingham, Nottingham, NG7 2RD, United Kingdom;
232.
1991

Skolnick M. S.; Whittaker D. M.; Simmonds P. E.; Fisher T. A.; Saker M. K.; Rorison J. M.; Smith R. S.; Kirby P. B.; White C. R. H.

Fermi‐energy‐edge singularity in quantum wells containing more than one occupied subband
Phys. Rev. B 43, 7354 (1991)
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcester WR14 3PS, United Kingdom
233.
1991

Skolnick M. S.; Simmonds P. E.; Fisher T. A.

Comment on ‘‘Interaction of magnetoexcitons and two‐dimensional electron gas in the quantum Hall regime’’
Phys. Rev. Lett. 66, 963 (1991)
Royal Signals & Radar Establishment, St. Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom;
234.
1991

Saker M. K.; Whittaker D. M.; Skolnick M. S.; Emeny M. T.; Whitehouse C. R.

Type‐I and type‐II Stark‐ladder phenomena in Ga;1-;xInxAs‐GaAs strained‐layer superlattices
Phys. Rev. B 43, 4945 (1991)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, WR14∥3PS, England;
235.
1991

Eaves Laurence; Hayes David; Leadbeater M. L.; Simmonds P. E.; Skolnick Maurice S.

Magnetocapacitance and photoluminescence spectroscopy studies of charge storage, bistability, and energy relaxation effects in resonant tunneling devices
Proc. SPIE Int. Soc. Opt. Eng. 1362, 520 (1991)
Univ. of Nottingham (United Kingdom)
236.
1990

Shields A. J.; Klipstein P. C.; Skolnick M. S.; Smith G. W.; Whitehouse C. R.

Stark‐ladder behavior of the ;X levels in a type‐II GaAs/AlAs superlattice measured using electroreflectance spectroscopy
Phys. Rev. B 42, 5879 (1990)
The Blackett Laboratory, Imperial College of Science, Technology, Medicine, University of London, London SW7 2BZ, United Kingdom
237.
1990

Skolnick M. S.; Henini M.; Eaves L.; Hayes D. G.; Simmonds P. E.; Higgs A. W.; Smith G. W.; Hutchinson H. J.; Whitehouse C. R.; Leadbeater M. L.; Hughes O. H.; Halliday D. P.

Erratum: Electronic processes in double‐barrier resonant‐tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B ;41, 10754 (1990)]
Phys. Rev. B 42, 5364 (1990)
238.
1990

Whittaker D. M.; Skolnick M. S.; Smith G. W.; Whitehouse C. R.

Wannier‐Stark localization of ;X and Γ states in GaAs‐AlAs short‐period superlattices
Phys. Rev. B 42, 3591 (1990)
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire WR14∥3PS, United Kingdom;
239.
1990

Skolnick M. S.; Simmonds P. E.; Hayes D. G.; Higgs A. W.; Smith G. W.; Pitt A. D.; Whitehouse C. R.; Hutchinson H. J.; White C. R. H.; Eaves L.; Henini M.; Hughes O. H.

Excitation mechanisms of photoluminescence in double‐barrier resonant‐tunneling structures
Phys. Rev. B 42, 3069 (1990)
Royal Signals and Radar Establishment, Saint Andrews Road, Malvern, Worcestershire WR14∥3PS, United Kingdom;
240.
1990

Hodge C. C.; Phillips C. C.; Skolnick M. S.; Smith G. W.; Whitehouse C. R.; Dawson P.; Foxon C. T.

Induced absorption spectroscopic determination of exciton binding energies in type‐II GaAs/AlAs superlattices
Phys. Rev. B 41, 12319 (1990)
Solid State Group, Physics Department, Imperial College, London SW7∥2AZ, United Kingdom;
241.
1990

Skolnick M. S.; Hayes D. G.; Leadbeater M. L.; Hughes O. H.; Henini M.; Eaves L.; Whitehouse C. R.; Hutchinson H. J.; Smith G. W.; Higgs A. W.; Simmonds P. E.; Halliday D. P.

Electronic processes in double‐barrier resonant‐tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields
Phys. Rev. B 41, 10754 (1990)
Royal Signals and Radar Establishment, Saint Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom
242.
1989

Skolnick M. S.; Smith G. W.; Spain I. L.; Whitehouse C. R.; Herbert D. C.; Whittaker D. M.; Reed L. J.

Phonon coupling and X‐;Γ; mixing in GaAs‐AlAs short‐period superlattices
Phys. Rev. B 39, 11191 (1989)
Royal Signals and Radar Establishment, Saint Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom
243.
1989

Nash K. J.; Skolnick M. S.; Claxton P. A.; Roberts J. S.

Diamagnetism as a probe of exciton localization in quantum wells
Phys. Rev. B 39, 10943 (1989)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14∥3PS, United Kingdom;
244.
1989

Nash K. J.; Claxton P. A.; Skolnick M. S.; Roberts J. S.

Phonon sideband of photoluminescence as a probe of exciton states in a quantum well
Phys. Rev. B 39, 5558 (1989)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcs. WR14 3PS, United Kingdom
245.
1989

Smith G. W.; Skolnick M. S.; Pitt A. D.; Spain I. L.; Whitehouse C. R.; Herbert D. C.

Photoluminescence and photoluminescence excitation studies on GaAs/AlAs short period superlattices near the direct/indirect crossover
J. Vac. Sci. Technol. B 7, 306 (1989)
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs WR14 3PS, UK
246.
1988

Mowbray D. J.; Skolnick M. S.; Lee D.; Claxton P. A.; Roberts J. S.

Electric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells
Appl. Phys. Lett. 53, 752 (1988)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, WR14 3PS, United Kingdom;
247.
1988

Skolnick M. S.; Halliday D. P.; Tu C. W.

Zeeman spectroscopy of the defect‐induced bound‐exciton lines in GaAs grown by molecular‐beam epitaxy
Phys. Rev. B 38, 4165 (1988)
Royal Signals and Radar Establishment, Saint Andrews Road, Malvern, Worcestershire, WR14∥3PS, United Kingdom;
248.
1988

Nash K. J.; Skolnick M. S.

Picosecond Raman studies of the Fröhlich interaction in semiconductor alloys
Phys. Rev. Lett. 60, 863 (1988)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14∥3PS, United Kingdom;
249.
1988

Skolnick M. S.; Nash K. J.; Bass S. J.

Comment on ‘‘Optical studies of excitons in Ga;0.47In0.53As/InP multiple quantum wells’’ [Appl. Phys. Lett. ;50, 839 (1987)]
Appl. Phys. Lett. 52, 674 (1988)
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire, United Kingdom
250.
1988

Harris T. D.; Skolnick M. S.; Parsey J. M.; Bhat R.

Donor identification in bulk gallium arsenide
Appl. Phys. Lett. 52, 389 (1988)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
251.
1987

Kana'ah A.; Johnson G. R.; Cavenett B. C.; Skolnick M. S.; Bass S. J.

Measurement of the weak‐field conduction‐electron ;g value in In0.53Ga0.47As by magnetic resonance
Phys. Rev. B 36, 1303 (1987)
University of Hull, Kingston‐upon‐Hull, Humberside, HU6∥7RX, United Kingdom;
252.
1987

Skolnick M. S.; Taylor L. L.; Bass S. J.; Pitt A. D.; Mowbray D. J.; Cullis A. G.; Chew N. G.

InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 51, 24 (1987)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, WR14 3PS, United Kingdom;
253.
1987

Skolnick M. S.; Nash K. J.; Saker M. K.; Bass S. J.; Claxton P. A.; Roberts J. S.

Free‐carrier effects on luminescence linewidths in quantum wells
Appl. Phys. Lett. 50, 1885 (1987)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom
254.
1987

Skolnick M. S.; Rorison J. M.; Nash K. J.; Mowbray D. J.; Tapster P. R.; Bass S. J.; Pitt A. D.

Observation of a many‐body edge singularity in quantum well luminescence spectra
Phys. Rev. Lett. 58, 2130 (1987)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, WR14 3PS, United Kingdom
255.
1987

Skolnick M. S.; Nash K. J.; Tapster P. R.; Mowbray D. J.; Bass S. J.; Pitt A. D.

Free‐carrier screening of the interaction between excitons and longitudinal‐optical phonons in In;xGa1-;xAs‐InP quantum wells
Phys. Rev. B 35, 5925 (1987)
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire, United Kingdom
256.
1986

Skolnick M. S.; Tu C. W.; Harris T. D.

High‐resolution spectroscopy of defect‐bound excitons and acceptors in GaAs grown by molecular‐beam epitaxy
Phys. Rev. B 33, 8468 (1986)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, United Kingdom
257.
1986

Skolnick M. S.; Tapster P. R.; Bass S. J.; Apsley N.; Pitt A. D.; Chew N. G.; Cullis A. G.; Aldred S. P.; Warwick C. A.

Optical properties of InGaAs‐InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 48, 1455 (1986)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, United Kingdom
258.
1986

Skolnick M. S.; Brozel M. R.

Distinction between near infrared optical absorption and light scattering in semi‐insulating GaAs
Appl. Phys. Lett. 48, 341 (1986)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, United Kingdom
259.
1985

Skolnick M. S.; Harris T. D.; Tu C. W.; Brennan T. M.; Sturge M. D.

Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy
Appl. Phys. Lett. 46, 427 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
260.
1984

Skolnick M. S.; Dean P. J.; Groves S. H.; Kuphal E.

Donor identification in liquid phase epitaxial indium phosphide
Appl. Phys. Lett. 45, 962 (1984)
Royal Signals and Radar Establishment, Great Malvern, Worcestershire, United Kingdom
261.
1984

Brozel M. R.; Grant I.; Ware R. M.; Stirland D. J.; Skolnick M. S.

Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi‐insulating GaAs
J. Appl. Phys. 56, 1109 (1984)
Department of Electrical and Electronic Engineering, Trent Polytechnic, Burton Street, Nottingham NG1 4BU, United Kingdom
262.
1984

Skolnick M. S.; Dean P. J.; Taylor L. L.; Anderson D. A.; Najda S. P.; Armistead C. J.; Stradling R. A.

Identification of germanium and tin donors in InP
Appl. Phys. Lett. 44, 881 (1984)
Royal Signals and Radar Establishment, Great Malvern, Worcestershire, United Kingdom
263.
1984

Skolnick M. S.; Foulkes E. J.; Tuck B.

Transition metal diffusion in InP: Photoluminescence investigation
J. Appl. Phys. 55, 2951 (1984)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire, United Kingdom
264.
1984

Dean P. J.; Skolnick M. S.; Taylor L. L.

Identification of donors in vapor grown indium phosphide
J. Appl. Phys. 55, 957 (1984)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcs, United Kingdom
265.
1984

Skolnick M. S.; Reed L. J.; Pitt A. D.

Photoinduced quenching of infrared absorption nonuniformities of large diameter GaAs crystals
Appl. Phys. Lett. 44, 447 (1984)
Royal Signals and Radar Establishment, Great Malvern, Worcestershire, United Kingdom
266.
1983

Dean P. J.; Skolnick M. S.

Donor discrimination and bound exciton spectra in InP
J. Appl. Phys. 54, 346 (1983)
Royal Signals and Radar Establishment, Saint Andrews Road, Great Malvern, Worcestershire, United Kingdom
267.
1982

Eaves L.; Smith A. W.; Skolnick M. S.; Cockayne B.

An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InP
J. Appl. Phys. 53, 4955 (1982)
Department of Physics, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
268.
1981

Skolnick M. S.; Cullis A. G.; Webber H.C.

Defect photoluminescence from pulsed‐laser‐annealed ion‐implanted Si
Appl. Phys. Lett. 38, 464 (1981)
Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcs WR14 3PS, United Kingdom

Co-authors

Co-publications
88

Hopkinson, Mark
73

Mowbray, DJ
71

Whittaker, David M.
48

Roberts, John S.
43

Tartakovskii, Alexander I.
41

Fox, A. Mark
40

Hill, Geoff
30

Cockburn, John W.
22

Liu, HY
21

Pate, Malcolm
21

Finley, JJ
21

Grey, Robert
21

Steer, Matthew J.
20

Wilson, Luke R.
20

Krizhanovskii, DN