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Sivananthan, Sivalingam

Computed

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Research Profile

Latest Publications

1.
2011

Wang X. J.; Chang Y.; Hou Y. B.; Becker C. R.; Kodama R.; Aqariden F.; Sivananthan S.

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer
J. Vac. Sci. Technol. A 29, 051503 (2011)
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607
2.
2010

Xu Dong; Biegala Tom; Carmody Michael; Garland James W.; Grein Christoph; Sivananthan Sivalingam

Proposed monolithic triple-junction solar cell structures with the potential for ultrahigh efficiencies using II–VI alloys and silicon substrates
Appl. Phys. Lett. 96, 073508 (2010)
EPIR Technologies, Inc., 590 Territorial Drive, Unit B, Bolingbrook, Illinois 60440, USA
3.
2009

Chang Yong; LeVan Paul D.; Nathan Vaidya; Grein C. H.; Becker C R.; Sivananthan S.

On the optical dispersive properties of HgCdTe as a function of depth
Proc. SPIE Int. Soc. Opt. Eng. 7419, 74190G (2009)
Univ. of Illinois at Chicago (USA)

Curriculum Vitae

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All Publications

1.
2011

Wang X. J.; Chang Y.; Hou Y. B.; Becker C. R.; Kodama R.; Aqariden F.; Sivananthan S.

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer
J. Vac. Sci. Technol. A 29, 051503 (2011)
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607
2.
2010

Xu Dong; Biegala Tom; Carmody Michael; Garland James W.; Grein Christoph; Sivananthan Sivalingam

Proposed monolithic triple-junction solar cell structures with the potential for ultrahigh efficiencies using II–VI alloys and silicon substrates
Appl. Phys. Lett. 96, 073508 (2010)
EPIR Technologies, Inc., 590 Territorial Drive, Unit B, Bolingbrook, Illinois 60440, USA
3.
2009

Chang Yong; LeVan Paul D.; Nathan Vaidya; Grein C. H.; Becker C R.; Sivananthan S.

On the optical dispersive properties of HgCdTe as a function of depth
Proc. SPIE Int. Soc. Opt. Eng. 7419, 74190G (2009)
Univ. of Illinois at Chicago (USA)
4.
2009

Lennon C.; Kodama R.; Chang Y.; Sivananthan S.; Deshpande M.

Effects of annealing in N2 on sputtered Al-doped ZnO thin films
J. Vac. Sci. Technol. B 27, 1641 (2009)
Department of Physics, University of Illinois at Chicago Microphysics Laboratory, UIC, Chicago, Illinois 60607-7059
5.
2008

Chang Y.; Grein C. H.; Zhao J.; Becker C. R.; Flatte M. E.; Liao P.-K.; Aqariden F.; Sivananthan S.

Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
Appl. Phys. Lett. 93, 192111 (2008)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA
6.
2008

Seldrum T.; Bommena R.; Samain L.; Dumont J.; Sivananthan S.; Sporken R.

Selective growth of CdTe on patterned CdTe/;Si(211)
J. Vac. Sci. Technol. B 26, 1105 (2008)
Department of Physics, University of Namur-FIJNDP, Rue de Bruxelles 61, B-5000 Namur, Belgium
7.
2006

Chang Yong; Grein Christoph H.; Sivananthan Sivalingam; Flatte M. E.; Nathan V.; Guha S.

Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail
Appl. Phys. Lett. 89, 062109 (2006)
Department of Physics (MC273), University of Illinois at Chicago, Chicago, Illinois 60607
8.
2006

Wang Changzhen; Smith David J.; Tobin Steve; Parodos Themis; Zhao Jun; Chang Yong; Sivananthan Sivalingam

Understanding ion-milling damage in Hg1-x;CdxTe epilayers
J. Vac. Sci. Technol. A 24, 995 (2006)
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287 and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287
9.
2006

Boieriu P.; Fulk C.; Sivananthan S.; Stoltz A.; Bubulac L.; Garland J.; Velicu S.; Grein C. H.; Dinan J. H.

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si
Appl. Phys. Lett. 88, 062106 (2006)
EPIR Technologies, Inc., Bolingbrook, Illinois 60440
10.
2005

Chang Yong; Zhao Jun; Abad Hisham; Grein Christoph H.; Sivananthan Sivalingam; Aoki Toshihiro; Smith David J.

Performance and reproducibility enhancement of HgCdTe molecular beam epitaxy growth on CdZnTe substrates using interfacial HgTe/;CdTe superlattice layers
Appl. Phys. Lett. 86, 131924 (2005)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607
11.
2005

Gupta Bikash C.; Batra Inder P.; Sivananthan S.

Growth of Te on As-exposed Si(211): Electronic structure calculations
Phys. Rev. B 71, 075328 (2005)
Department of Physics, 845 West Taylor Street, University of Illinois at Chicago, Chicago, Illinois 60607-7059, USA
12.
2004

Stirman J. N.; Crozier P. A.; Smith David J.; Phillipp F.; Brill G.; Sivananthan S.

Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface
Appl. Phys. Lett. 84, 2530 (2004)
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704;
13.
2003

Chang Y.; Badano G.; Zhao J.; Grein C. H.; Sivananthan S.; Aoki T.; Smith David J.

Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy
Appl. Phys. Lett. 83, 4785 (2003)
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, Illinois 60607;
14.
2003

Badano G.; Chang Y.; Garland J. W.; Sivananthan S.

Temperature-dependent adsorption of Hg on CdTe(211)B studied by spectroscopic ellipsometry
Appl. Phys. Lett. 83, 2324 (2003)
University of Illinois at Chicago, 845 W. Taylor Street, Room 2356, Chicago, Illinois 60607;
15.
2003

Sen Prasenjit; Batra Inder P.; Sivananthan S.; Grein C. H.; Dhar Nibir; Ciraci S.

Electronic structure of Te- and As-covered Si(211)
Phys. Rev. B 68, 045314 (2003)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059, USA;
16.
2003

Aoki T.; Smith David J.; Chang Y.; Zhao J.; Badano G.; Grein C.; Sivananthan S.

Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy
Appl. Phys. Lett. 82, 2275 (2003)
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704;
17.
2002

Selamet Yusuf; Ciani Antony; Grein Christoph H.; Sivananthan Sivalingam

Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy
Proc. SPIE Int. Soc. Opt. Eng. 4795, 8 (2002)
Univ. of Illinois/Chicago (USA)
18.
2002

Zhao Jun; Zhou Yongdong; Badano Giacomo; Selamet Yusuf; Grein Christoph H.; Sivananthan Sivalingam

MBE growth of HgCdTe HOT detector heterostructures
Proc. SPIE Int. Soc. Opt. Eng. 4795, 82 (2002)
Univ. of Illinois/Chicago (USA)
19.
2002

Badano Giacomo; Garland James W.; Zhao Jun; Sivananthan Sivalingam

Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth
Proc. SPIE Int. Soc. Opt. Eng. 4795, 70 (2002)
Univ. of Illinois/Chicago (USA)
20.
2002

Suh Sang-Hee; Kim Jin-Sang; Seo Dae-Won; Hahn Suk-Ryong; Sivananthan Sivalingam

Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates
Proc. SPIE Int. Soc. Opt. Eng. 4795, 1 (2002)
Korea Institute of Science and Technology (South Korea)
21.
2002

Boieriu P.; Sporken R.; Sivananthan S.

Valence band offset at the CdS/CdTe interface
J. Vac. Sci. Technol. B 20, 1777 (2002)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, M/C 273, 845 W. Taylor Street, Chicago, Illinois 60607;
22.
2002

Tari S.; Sporken R.; Aoki T.; Smith David J.; Metlushko V.; AbuEl-Rub K.; Sivananthan S.

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties
J. Vac. Sci. Technol. B 20, 1586 (2002)
Microphysics Laboratory, University of Illinois at Chicago, Chicago, Illinois 60607
23.
2001

Floyd Margaret; Zhang Yangting; Drucker Jeff; Smith David J.; Tari S.; Sivananthan S.

Evolution of self-assembled Ge/Si(211) islands
Appl. Phys. Lett. 79, 4518 (2001)
Center for Solid State Science and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1704;
24.
2001

Badano G.; Daraselia M.; Sivananthan S.

In situ monitoring of molecular-beam-epitaxy grown Hg1-x;CdxTe by Fourier transform infrared spectroscopy
J. Vac. Sci. Technol. B 19, 1576 (2001)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059;
25.
2001

Tari S.; Brill G.; Sivananthan S.; Floyd M.; Smith David J.

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1562 (2001)
Microphysics Laboratory, University of Illinois at Chicago, Chicago, Illinois 60607;
26.
2001

Selamet Y.; Grein C. H.; Lee T. S.; Sivananthan S.

Electrical properties of in situ As doped Hg1-x;CdxTe epilayers grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1488 (2001)
Microphysics Laboratory and Department of Physics, The University of Illinois at Chicago, Chicago, Illinois 60607-7059
27.
2000

Yang B.; Xin Y.; Rujirawat S.; Browning N. D.; Sivananthan S.

Molecular beam epitaxial growth and structural properties of HgCdTe layers on CdTe(211)B/Si(211) substrates
J. Appl. Phys. 88, 115 (2000)
Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607;
28.
2000

Xin Y.; James E. M.; Arslan I.; Sivananthan S.; Browning N. D.; Pennycook S. J.; Omnès F.; Beaumont B.; Faurie J-P.; Gibart P.

Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films
Appl. Phys. Lett. 76, 466 (2000)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059;
29.
1999

Xin Y.; Rujirawat S.; Browning N. D.; Sporken R.; Sivananthan S.; Pennycook S. J.; Dhar N. K.

The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates
Appl. Phys. Lett. 75, 349 (1999)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607;
30.
1999

Yang B.; Aqariden F.; Grein C. H.; Jandaska A.; Lee T. S.; Nemani A.; Rujirawat S.; Shi X. H.; Sumstine M.; Velicu S.; Sivananthan S.

Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy
J. Vac. Sci. Technol. B 17, 1205 (1999)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607;
31.
1999

Rujirawat S.; Xin Y.; Browning N. D.; Sivananthan S.; Smith David J.; Tsen S.-C. Y.; Chen Y. P.; Nathan V.

CdTe(111)B grown on Si(111) by molecular beam epitaxy
Appl. Phys. Lett. 74, 2346 (1999)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059;
32.
1999

Garland J. W.; Grein C. H.; Yang B.; Wijewarnasuriya P. S.; Aqariden F.; Sivananthan S.

Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1-x;CdxTe;As
Appl. Phys. Lett. 74, 1975 (1999)
Physics Department (M/C 273), Microphysics Laboratory, 845 W. Taylor Street, Room 2236, University of Illinois at Chicago, Chicago, Illinois 60607;
33.
1998

Xin Y.; Browning N. D.; Rujirawat S.; Sivananthan S.; Chen Y. P.; Nellist P. D.; Pennycook S. J.

Investigation of the evolution of single domain (111)B CdTe films by molecular beam epitaxy on miscut (001)Si substrate
J. Appl. Phys. 84, 4292 (1998)
Department of Physics, University of Illinois at Chicago, Chicago, Ilinois 60607-7059;
34.
1998

Shi X. H.; Rujirawat S.; Ashokan R.; Grein C. H.; Sivananthan S.

Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy
Appl. Phys. Lett. 73, 638 (1998)
Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, Chicago, Illinois 60607;
35.
1998

Xin Y.; Pennycook S. J.; Browning N. D.; Nellist P. D.; Sivananthan S.; Omnès F.; Beaumont B.; Faurie J. P.; Gibart P.

Direct observation of the core structures of threading dislocations in GaN
Appl. Phys. Lett. 72, 2680 (1998)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059;
36.
1998

Aqariden F.; Wijewarnasuriya P. S.; Sivananthan S.

Arsenic incorporation in HgCdTe grown by molecular beam epitaxy*
J. Vac. Sci. Technol. B 16, 1309 (1998)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607;
37.
1998

Wijewarnasuriya P. S.; Sivananthan S.

Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
Appl. Phys. Lett. 72, 1694 (1998)
Department of Physics (M/C 273), Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor Street, Room 2236, Chicago, Illinois 60607;
38.
1997

Rujirawat S.; Almeida L. A.; Chen Y. P.; Sivananthan S.; Smith David J.

High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy
Appl. Phys. Lett. 71, 1810 (1997)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607
39.
1997

Mehendale Manjusha; Sivananthan S.; Andreas Schroeder W.

Hot electron relaxation dynamics in ZnSe
Appl. Phys. Lett. 71, 1089 (1997)
University of Illinois at Chicago, Department of Physics (M/C 273), 845 West Taylor Street (Room 2348), Chicago, Illinois 60607-7059
40.
1997

Kim C. C.; Daraselia M.; Garland J. W.; Sivananthan S.

Temperature dependence of the optical properties of CdTe
Phys. Rev. B 56, 4786 (1997)
University of Illinois at Chicago, Microphysics Laboratory, Department of Physics, 845 W. Taylor, Chicago, Illinois 60607-7059
41.
1997

Hutchins J. W.; Skromme B. J.; Chen Y. P.; Sivananthan S.; Posthill J. B.

Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy
Appl. Phys. Lett. 71, 350 (1997)
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706
42.
1997

Wallis D. J.; Browning N. D.; Sivananthan S.; Nellist P. D.; Pennycook S. J.

Atomic layer graphoepitaxy for single crystal heterostructures
Appl. Phys. Lett. 70, 3113 (1997)
Department of Physics (M/C 273), University of Illinois at Chicago, Chicago, Illinois 60607-7059
43.
1996

Grann E.; Chen Y.; Tsen K. T.; Ferry D. K.; Almeida T.; Chen Y. P.; Faurie J. P.; Sivananthan S.

Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe
J. Appl. Phys. 80, 3840 (1996)
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287
44.
1996

Smith David J.; Tsen S.-C. Y.; Chen Y. P.; Sivananthan S.; Posthill J. B.

Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers
Appl. Phys. Lett. 69, 2086 (1996)
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona 85287‐1504;
45.
1996

Wang L.; Sivananthan S.; Sporken R.; Caudano R.

Interface properties and valence‐band discontinuity of MnS/ZnSe heterostructures
Phys. Rev. B 54, 2718 (1996)
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607‐7059;
46.
1996

Faurie Jean-Pierre; Almeida Leo A.; Chen Yuanping; Sporken R.; Sivananthan Sivalingam

Heteroepitaxy of CdTe on Si substrates in view of infrared and x-ray detection
Proc. SPIE Int. Soc. Opt. Eng. 2685, 28 (1996)
Univ. of Illinois/Chicago (USA)
47.
1996

Kim Charles C.; Sivananthan S.

Optical properties of ZnSe and its modeling
Phys. Rev. B 53, 1475 (1996)
University of Illinois at Chicago, Microphysics Laboratory, Physics Department, 845 West Taylor Street, Chicago, Illinois 60607‐7059;
48.
1995

Skromme B. J.; Zhang Y.; Smith David J.; Sivananthan S.

Growth and characterization of pseudomorphic single crystal zinc blende MnS
Appl. Phys. Lett. 67, 2690 (1995)
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287‐5706;
49.
1995

Kim Charles C.; Sivananthan S.

Modeling the optical dielectric function of II‐VI compound CdTe
J. Appl. Phys. 78, 4003 (1995)
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, 845 West Taylor, Chicago, Illinois 60607‐7059;
50.
1995

Smith David J.; Tsen S.-C. Y.; Chen Y. P.; Faurie J.-P.; Sivananthan S.

Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates
Appl. Phys. Lett. 67, 1591 (1995)
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
51.
1995

Sivananthan Sivalingam; Wijewarnasuriya Priyalal S.; Faurie Jean-Pierre

Recent progress in the doping of MBE HgCdTe
Proc. SPIE Int. Soc. Opt. Eng. 2554, 55 (1995)
Univ. of Illinois/Chicago (USA)
52.
1995

Yoo Sung-Shik; Rodricks Brian G.; Sivananthan Sivalingam; Faurie Jean-Pierre; Montano Pedro A.

Low-temperature performance of an MBE-grown CdTe x-ray photoconductor detector
Proc. SPIE Int. Soc. Opt. Eng. 2519, 87 (1995)
Univ. of Illinois/Chicago and Argonne National Lab. (USA)
53.
1995

Yoo S. S.; Sivananthan S.; Faurie J. P.; Rodricks B.; Bai J.; Montano P. A.

New CdTe photoconductor array detector for x‐ray applications
Appl. Phys. Lett. 66, 2037 (1995)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607‐7059;
54.
1995

Yoo S. S.; Rodricks B.; Sivananthan S.; Faurie J. P.; Montano P. A.

MBE grown CdTe photoconductor array detector for x‐ray measurements
Rev. Sci. Instrum. 66, 2320 (1995)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607,
55.
1994

Chen Yuanping; Faurie Jean-Pierre; Sivananthan Sivalingam

Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy
Proc. SPIE Int. Soc. Opt. Eng. 2228, 54 (1994)
Univ. of Illinois/Chicago (USA)
56.
1994

Yoo Sung-Shik; Rodricks Brian G.; Sivananthan Sivalingam; Faurie Jean-Pierre; Montano Pedro A.

Ultrafast molecular beam epitaxy (MBE) CdTe photoconductor array for synchrotron radiation
Proc. SPIE Int. Soc. Opt. Eng. 2228, 201 (1994)
Univ. of Illinois/Chicago (USA)
57.
1994

Wijewarnasuriya P. S.; Lange M. D.; Sivananthan S.; Faurie J. P.

Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy
J. Appl. Phys. 75, 1005 (1994)
EPIR, Ltd., P. O. Box 803827‐P2E, Chicago, Illinois 60680‐3827;
58.
1993

Rafol S. B.; Wijewarnasuriya P. S.; Sivananthan S.; Faurie J. P.

Hall electron density and mobility in HgCdTe alloys with anomalous behavior of the Hall coefficient in weak magnetic field
J. Appl. Phys. 74, 1096 (1993)
Microphysics Laboratory, University of Illinois at Chicago, Department of Physics (M/C 273), 801 West Taylor Street, Room No. 2236, Chicago, Illinois 60607‐7059;
59.
1993

Rafol S. B.; Wijewarnasuriya P. S.; Sou I. K.; Sivananthan S.; Faurie J. P.

Shubnikov–de Haas oscillations on as‐grown and annealed molecular‐beam‐epitaxy‐grown Hg;1-;xCdxTe alloys doped with indium
J. Appl. Phys. 73, 216 (1993)
Microphysics Laboratory, Department of Physics, University of Illinois, P. O. Box 4348, Chicago, Illinois 60680
60.
1992

Faurie Jean-Pierre; Sivananthan Sivalingam; Wijewarnasuriya Priyalal S.

Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates
Proc. SPIE Int. Soc. Opt. Eng. 1735, 141 (1992)
Univ. of Illinois/Chicago (USA)
61.
1992

Sporken R.; Chen Y. P.; Sivananthan S.; Lange M. D.; Faurie J. P.

Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 10, 1405 (1992)
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, P.O. Box 4348, Chicago, Illinois 60680
62.
1991

Sporken R.; Lange M. D.; Sivananthan S.; Faurie J. P.

Molecular beam epitaxy and characterization of HgCdTe(111)B on Si(100)
Appl. Phys. Lett. 59, 81 (1991)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, P.O. Box 4348, Chicago, Illinois 60680
63.
1991

Vitomirov I. M.; Brillson L. J.; Chang S.; Sivananthan S.; Rioux D. F.; Faurie J. P.

Au interfaces with epitaxially grown CdTe(111): Chemistry and barrier heights
J. Vac. Sci. Technol. A 9, 966 (1991)
Xerox Webster Research Center, Webster, New York 14580
64.
1990

Mahavadi K. K.; Bleuse J.; Sivananthan S.; Faurie J. P.

Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy
Appl. Phys. Lett. 56, 2077 (1990)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
65.
1990

Shaw J. L.; Brillson L. J.; Sivananthan S.; Faurie J. P.

Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces
Appl. Phys. Lett. 56, 1266 (1990)
Xerox Webster Research Laboratory, Webster, New York 14580
66.
1990

Mahavadi K. K.; Sivananthan S.; Lange M. D.; Chu X.; Bleuse J.; Faurie J. P.

Stimulated emission from a Hg1-;xCdxTe epilayer and CdTe/Hg1-;xCdxTe heterostructures grown by molecular beam epitaxy
J. Vac. Sci. Technol. A 8, 1210 (1990)
Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
67.
1989

Sporken R.; Sivananthan S.; Mahavadi K. K.; Monfroy G.; Boukerche M.; Faurie J. P.

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)
Appl. Phys. Lett. 55, 1879 (1989)
Microphysics Laboratory, iversity of Illinois at Chicago, Chicago, Illinois 60680
68.
1989

Sporken R.; Sivananthan S.; Faurie J. P.; Ehlers D. H.; Fraxedas J.; Ley L.; Pireaux J. J.; Caudano R.

Temperature‐dependent photoemission study of the HgTe–CdTe valence‐band discontinuity
J. Vac. Sci. Technol. A 7, 427 (1989)
Physics Department, University of Illinois at Chicago, Chicago, Illinois 60680 and Facultés Universitaires Notre‐Dame de la Paix, Laboratoire Interdisciplinaire de Spectroscopie Electronique, Namur, Belgium;
69.
1989

Monfroy G.; Sivananthan S.; Faurie J. P.; Reno J. L.

Study of CdTe(111)B epilayers grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 7, 326 (1989)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
70.
1989

Boukerche M.; Sivananthan S.; Wijewarnasuriya P. S.; Sou I. K.; Faurie J. P.

Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111);B orientation
J. Vac. Sci. Technol. A 7, 311 (1989)
Department of Physics, The University of Illinois at Chicago, Chicago, Illinois 60680
71.
1988

Sporken R.; Sivananthan S.; Reno J.; Faurie J. P.

X‐ray photoemission from small mercury clusters on II‐VI semiconductor surfaces
Phys. Rev. B 38, 1351 (1988)
Department of Physics, University of Illinois at Chicago, P.O. Box 4348, Chicago, Illinois 60680
72.
1988

Sporken R.; Sivananthan S.; Reno J.; Faurie J. P.

X‐ray photoemission study of Hg clusters on Hg;1-;xCdxTe surfaces
J. Vac. Sci. Technol. B 6, 1204 (1988)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
73.
1988

Boukerche M.; Wijewarnasuriya P. S.; Sivananthan S.; Sou I. K.; Kim Y. J.; Mahavadi K. K.; Faurie J. P.

The doping of mercury cadmium telluride grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 6, 2830 (1988)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
74.
1988

Faurie J. P.; Sivananthan S.; Lange M.; Dewames R. E.; Vandewyck A. M. B.; Williams G. M.; Yamini Dan; Yao E.

Characteristics of p‐;n junctions fabricated on Hg1-;xCdxTe epilayers grown by molecular beam epitaxy
Appl. Phys. Lett. 52, 2151 (1988)
University of Illinois at Chicago, Physics Department, Chicago, Illinois 60680
75.
1988

Lemasson Philippe; Van Huong Chau Nguyen; Chu X.; Sivananthan S.; Faurie Jean-Pierre

Electrochemical and Electro‐optical Study of the Strained‐Layer Superlattice System; ;CdTe‐;ZnTe
J. Electrochem. Soc. 135, 1282 (1988)
Laboratoire de Photochimie Solaire, CNRS, 2, 94320 Thiais, France
76.
1988

Lange M. D.; Sivananthan S.; Chu X.; Faurie J. P.

Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg;1-;xCdxTe films on GaAs (100) substrates
Appl. Phys. Lett. 52, 978 (1988)
University of Illinois at Chicago, Department of Physics, P. O. Box 4348, Chicago, Illinois 60680
77.
1988

Sivananthan S.; Lange M. D.; Monfroy G.; Faurie J. P.

New achievements in Hg1-;xCdxTe grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 6, 788 (1988)
University of Illinois at Chicago, Department of Physics, P.O. Box 4348, Chicago, Illinois 60680
78.
1987

Wijewarnasuriya P. S.; Sou I. K.; Kim Y. J.; Mahavadi K. K.; Sivananthan S.; Boukerche M.; Faurie J. P.

Electrical properties of Li‐doped Hg;1-;xCdxTe(100) by molecular beam epitaxy
Appl. Phys. Lett. 51, 2025 (1987)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
79.
1987

Arias J. M.; Shin S. H.; Cheung J. T.; Chen J. S.; Sivananthan S.; Reno J.; Faurie J. P.

(100) versus (111)B crystallographic orientation of Hg1-;xCdxTe grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 5, 3133 (1987)
Rockwell International Science Center, Thousand Oaks, California 91360
80.
1987

Miles R. H.; McGill T. C.; Sivananthan S.; Chu X.; Faurie J. P.

Structure of CdTe/ZnTe superlattices
J. Vac. Sci. Technol. B 5, 1263 (1987)
California Institute of Technology, Pasadena, California 91125
81.
1987

Faurie J. P.; Reno J.; Sivananthan S.; Chu X.; Wijewarnasuriya P. S.

Summary Abstract: Type III–type I transition in Hg;1-;xCdxTe–CdTe, Hg;1-;xMnxTe–CdTe, and Hg;1-;xZnxTe–CdTe superlattices
J. Vac. Sci. Technol. B 5, 700 (1987)
University of Illinois, Box 4348, Chicago, Illinois 60680
82.
1987

Sivananthan S.; Chu X.; Faurie J. P.

Dependence of the condensation coefficient of Hg on the orientation and the stability of the Hg–Te bond for the growth of Hg;1-;xMxTe (M=Cd, Mn, Zn)
J. Vac. Sci. Technol. B 5, 694 (1987)
Department of Physics, University of Illinois at Chicago, P.O. Box 4348 Chicago, Illinois 60680
83.
1987

Chu X.; Sivananthan S.; Faurie J. P.

Hg1-;xMnxTe‐CdTe superlattices grown by molecular beam epitaxy
Appl. Phys. Lett. 50, 597 (1987)
Department of Physics, University of Illinois at Chicago, P. O. Box 4348, Chicago, Illinois 60680
84.
1986

Hefetz Y.; Lee D.; Nurmikko A. V.; Sivananthan S.; Chu X.; Faurie p J.-P.

Quasi‐two‐dimensional excitons in a strongly localized regime in CdTe‐ZnTe superlattices
Phys. Rev. B 34, 4423 (1986)
Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912
85.
1986

Sivananthan S.; Chu X.; Reno J.; Faurie J. P.

Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular‐beam‐epitaxial growth of Hg;1-;xCdxTe and CdTe
J. Appl. Phys. 60, 1359 (1986)
University of Illinois at Chicago, Department of Physics, P. O. Box 4348, Chicago, Illinois 60680
86.
1986

Monfroy G.; Sivananthan S.; Chu X.; Faurie J. P.; Knox R. D.; Staudenmann J. L.

Molecular beam epitaxial growth of a novel strained‐layer superlattice system; CdTe‐ZnTe
Appl. Phys. Lett. 49, 152 (1986)
University of Illinois at Chicago, Department of Physics, P.O. Box 4348, Chicago, Illinois 60680
87.
1986

Faurie J. P.; Sivananthan S.; Reno J.

Present status of molecular beam epitaxial growth and properties of HgTe–CdTe superlattices
J. Vac. Sci. Technol. A 4, 2096 (1986)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
88.
1986

Faurie J. P.; Reno J.; Sivananthan S.; Sou I. K.; Chu X.; Boukerche M.; Wijewarnasuriya P. S.

Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100)
J. Vac. Sci. Technol. A 4, 2067 (1986)
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
89.
1986

Miles R. H.; Wu G. Y.; Johnson M. B.; McGill T. C.; Faurie J. P.; Sivananthan S.

Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices
Appl. Phys. Lett. 48, 1383 (1986)
California Institute of Technology, Pasadena, California 91125
90.
1986

Hsu C.; Sivananthan S.; Chu X.; Faurie J. P.

Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy
Appl. Phys. Lett. 48, 908 (1986)
University of Illinois at Chicago, Department of Physics, P. O. Box 4348, Chicago, Illinois 60680
91.
1986

Faurie J. P.; Sivananthan S.; Chu X.; Wijewarnasuriya P. S.

Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe‐ZnTe
Appl. Phys. Lett. 48, 785 (1986)
University of Illinois at Chicago, Department of Physics, P. O. Box 4348, Chicago, Illinois 60680
92.
1986

Faurie J. P.; Boukerche M.; Chu X.; Sou I. K.; Sivananthan S.; Reno J.; Wijewarnasuriya P. S.

Molecular beam epitaxial growth and characterization of Cd1-;xZnxTe, Hg1-;xCdxTe, Hg1-;xMnxTe, and Hg1-;xZnxTe on GaAs(100)
J. Vac. Sci. Technol. B 4, 585 (1986)
University of Illinois at Chicago, Department of Physics, Chicago, Illinois 60680
93.
1985

Sivananthan S.; Chu X.; Boukerche M.; Faurie J. P.

Growth of Hg1-;xZnxTe by molecular beam epitaxy on a GaAs(100) substrate
Appl. Phys. Lett. 47, 1291 (1985)
Department of Physics, P.O. Box 4348, University of Illinois at Chicago, Chicago, Illinois 60680
94.
1985

Olego D. J.; Faurie J. P.; Sivananthan S.; Raccah P. M.

Optoelectronic properties of Cd1-;xZnxTe films grown by molecular beam epitaxy on GaAs substrates
Appl. Phys. Lett. 47, 1172 (1985)
Stauffer Chemical Company, Eastern Research Center, Elmsford, New York 10523
95.
1985

Faurie J. P.; Boukerche M.; Reno J.; Sivananthan S.; Hsu C.

Molecular beam epitaxy of alloys and superlattices involving mercury
J. Vac. Sci. Technol. A 3, 55 (1985)
Physics Department, University of Illinois at Chicago, Chicago, Illinois 60680
96.
1984

Faurie J. P.; Sivananthan S.; Boukerche M.; Reno J.

Molecular beam epitaxial growth of high quality HgTe and Hg1-;xCdxTe onto GaAs(001) substrates
Appl. Phys. Lett. 45, 1307 (1984)
University of Illinois at Chicago, Department of Physics, P.O. Box 4348, Chicago, Illinois 60680

Co-authors

Co-publications
15

Grein, Christoph H.
13

Smith, David J.
7

Zhao, Jun
7

Browning, Nigel D.
7

Rujirawat, S
6

Badano, G
6

Xin, Y
5

Chang, Yia-Chung
5

Chang, Yong
5

Pennycook, Stephen John
4

Rodricks, Brian
4

Aqariden, F
4

Sporken, Robert
3

Nathan, Vaidya
3

Tari, S