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Samuelson, Lars

Computed

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Research Profile

Latest Publications

1.
2011

Ganjipour Bahram; Nilsson Henrik A.; Mattias Borg B.; Wernersson Lars-Erik; Samuelson Lars; Xu H. Q.; Thelander Claes

GaSb nanowire single-hole transistor
Appl. Phys. Lett. 99, 262104 (2011)
Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
2.
2011

Hoffmann E. A.; Nilsson H. A.; Samuelson L.; Linke H.

Mesoscopic Thermovoltage Measurement Design
AIP Conf. Proc. 1399, 397 (2011)
Physics Department and Materials Science Institute, University of Oregon, Eugene, Oregon 97403‐1274, USA
3.
2011

Storm Kristian; Nylund Gustav; Borgström Magnus; Wallentin Jesper; Fasth Carina; Thelander Claes; Samuelson Lars

Dual‐gate induced InP nanowire diode
AIP Conf. Proc. 1399, 279 (2011)
Solid State Physics, the Nanometer Structure Consortium, Lund University, Sweden

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All Publications

1.
2011

Ganjipour Bahram; Nilsson Henrik A.; Mattias Borg B.; Wernersson Lars-Erik; Samuelson Lars; Xu H. Q.; Thelander Claes

GaSb nanowire single-hole transistor
Appl. Phys. Lett. 99, 262104 (2011)
Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
2.
2011

Hoffmann E. A.; Nilsson H. A.; Samuelson L.; Linke H.

Mesoscopic Thermovoltage Measurement Design
AIP Conf. Proc. 1399, 397 (2011)
Physics Department and Materials Science Institute, University of Oregon, Eugene, Oregon 97403‐1274, USA
3.
2011

Storm Kristian; Nylund Gustav; Borgström Magnus; Wallentin Jesper; Fasth Carina; Thelander Claes; Samuelson Lars

Dual‐gate induced InP nanowire diode
AIP Conf. Proc. 1399, 279 (2011)
Solid State Physics, the Nanometer Structure Consortium, Lund University, Sweden
4.
2011

Wallentin Jesper; Wickert Peter; Ek Martin; Gustafsson Anders; Reine Wallenberg L.; Magnusson Martin H.; Samuelson Lars; Deppert Knut; Borgström Magnus T.

Degenerate p-doping of InP nanowires for large area tunnel diodes
Appl. Phys. Lett. 99, 253105 (2011)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
5.
2011

Hjort M.; Wallentin J.; Timm R.; Zakharov A. A.; Andersen J. N.; Samuelson L.; Borgström M. T.; Mikkelsen A.

Doping profile of InP nanowires directly imaged by photoemission electron microscopy
Appl. Phys. Lett. 99, 233113 (2011)
Department of Physics, Lund University, P.O. Box 118, 22 100 Lund, Sweden
6.
2011

Kawaguchi Kenichi; Heurlin Magnus; Lindgren David; Borgström Magnus T.; Ek Martin; Samuelson Lars

InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
Appl. Phys. Lett. 99, 131915 (2011)
Lund University, Solid State Physics, Box 118, S-221 00 Lund, Sweden
7.
2011

Zhou Feng; Persson Ann; Samuelson Lars; Linke Heiner; Shi Li

Thermal resistance of a nanoscale point contact to an indium arsenide nanowire
Appl. Phys. Lett. 99, 063110 (2011)
Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, USA
8.
2011

Zhou Feng; Moore Arden L.; Bolinsson Jessica; Persson Ann; Fröberg Linus; Pettes Michael T.; Kong Huijun; Rabenberg Lew; Caroff Philippe; Stewart Derek A.; Mingo Natalio; Dick Kimberly A.; Samuelson Lars; Linke Heiner; Shi Li

Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases
Phys. Rev. B 83, 205416 (2011)
Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, USA
9.
2011

Kristinsdóttir L. H.; Cremon J. C.; Nilsson H. A.; Xu H. Q.; Samuelson L.; Linke H.; Wacker A.; Reimann S. M.; Nanometer Structure Consortium, nmC@LU

Signatures of Wigner localization in epitaxially grown nanowires
Phys. Rev. B 83, 041101 (2011)
Division of Mathematical Physics, Lund University, Box 118, S-22100 Lund, Sweden
10.
2010

Conache G.; Gray S. M.; Ribayrol A.; Fröberg L. E.; Samuelson L.; Montelius L.; Pettersson H.

Comparative friction measurements of InAs nanowires on three substrates
J. Appl. Phys. 108, 094307 (2010)
Solid State Physics and The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
11.
2010

Gustafsson Anders; Bolinsson Jessica; Sköld Niklas; Samuelson Lars

Determination of diffusion lengths in nanowires using cathodoluminescence
Appl. Phys. Lett. 97, 072114 (2010)
Solid State Physics and Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
12.
2010

Conache G.; Ribayrol A.; Fröberg L. E.; Borgström M. T.; Samuelson L.; Montelius L.; Pettersson H.; Gray S. M.

Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
Phys. Rev. B 82, 035403 (2010)
Solid State Physics and the Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden
13.
2010

Nilsson H. A.; Karlström O.; Larsson M.; Caroff P.; Pedersen J. N.; Samuelson L.; Wacker A.; Wernersson L.-E.; Xu H. Q.

Correlation-Induced Conductance Suppression at Level Degeneracy in a Quantum Dot
Phys. Rev. Lett. 104, 186804 (2010)
Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
14.
2010

Weber C.; Fuhrer A.; Fasth C.; Lindwall G.; Samuelson L.; Wacker A.

Probing Confined Phonon Modes by Transport through a Nanowire Double Quantum Dot
Phys. Rev. Lett. 104, 036801 (2010)
Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
15.
2010

Kallesøe Christian; Mølhave Kristian; Larsen Kasper F.; Engstrøm Daniel; Hansen Torben M.; Bøggild Peter; Mårtensson Thomas; Borgström Magnus; Samuelson Lars

Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
J. Vac. Sci. Technol. B 28, 21 (2010)
Department of Micro- and Nanotechnology, Technical University of Denmark, Kgs. Lyngby DK-2800, Denmark
16.
2009

Spirkoska D.; Arbiol J.; Gustafsson A.; Conesa-Boj S.; Glas F.; Zardo I.; Heigoldt M.; Gass M. H.; Bleloch A. L.; Estrade S.; Kaniber M.; Rossler J.; Peiro F.; Morante J. R.; Abstreiter G.; Samuelson L.; Fontcuberta i Morral A.

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
Phys. Rev. B 80, 245325 (2009)
Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
17.
2009

Suyatin Dmitry B.; Hällström Waldemar; Samuelson Lars; Montelius Lars; Prinz Christelle N.; Kanje Martin

Gallium phosphide nanowire arrays and their possible application in cellular force investigations
J. Vac. Sci. Technol. B 27, 3092 (2009)
Division of Solid State Physics, Lund University, S-22100 Lund, Sweden
18.
2009

Sköld Niklas; Pistol Mats-Erik; Dick Kimberly A.; Pryor Craig; Wagner Jakob B.; Karlsson Lisa S.; Samuelson Lars

Microphotoluminescence studies of tunable wurtzite InAs0.85P0.15 quantum dots embedded in wurtzite InP nanowires
Phys. Rev. B 80, 041312 (2009)
Solid State Physics/The Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
19.
2009

Eymery J.; Favre-Nicolin V.; Fröberg L.; Samuelson L.

X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
Appl. Phys. Lett. 94, 131911 (2009)
CEA, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
20.
2008

Liu R. S.; Canali C. M.; Samuelson L.; Pettersson H.

Magnetoresistance studies on Co/;AlOX/;Au and Co/;AlOX/;Ni/;Au tunnel structures
Appl. Phys. Lett. 93, 203107 (2008)
Center for Applied Mathematics and Physics, Halmstad University, P.O. Box 823, SE-301 18 Halmstad, Sweden
21.
2008

Roddaro S.; Fuhrer A.; Brusheim P.; Fasth C.; Xu H. Q.; Samuelson L.; Xiang J.; Lieber C. M.

Spin States of Holes in Ge/Si Nanowire Quantum Dots
Phys. Rev. Lett. 101, 186802 (2008)
Solid State Physics/The Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
22.
2008

Martin T. P.; Szorkovszky A.; Micolich A. P.; Hamilton A. R.; Marlow C. A.; Linke H.; Taylor R. P.; Samuelson L.

Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts
Appl. Phys. Lett. 93, 012105 (2008)
School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
23.
2008

Roddaro Stefano; Nilsson Kristian; Astromskas Gvidas; Samuelson Lars; Wernersson Lars-Erik; Karlström Olov; Wacker Andreas

InAs nanowire metal-oxide-semiconductor capacitors
Appl. Phys. Lett. 92, 253509 (2008)
The Nanometer Structure Consortium, Lund University, P.O. Box 118, 22100 Lund, Sweden
24.
2008

Bleszynski-Jayich Ania C.; Fröberg Linus E.; Björk Mikael T.; Trodahl H. J.; Samuelson Lars; Westervelt R. M.

Imaging a one-electron InAs quantum dot in an InAs/InP nanowire
Phys. Rev. B 77, 245327 (2008)
Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
25.
2008

Martin T. P.; Marlow C. A.; Samuelson L.; Hamilton A. R.; Linke H.; Taylor R. P.

Confinement properties of a Ga0.25In0.75As/;InP quantum point contact
Phys. Rev. B 77, 155309 (2008)
School of Physics, University of New South Wales, Sydney NSW 2052, Australia
26.
2008

Chen Jianing; Yang Weisheng; Dick Kimberly; Deppert Knut; Xu H. Q.; Samuelson Lars; Xu Hongxing

Tip-enhanced Raman scattering of p-thiocresol molecules on individual gold nanoparticles
Appl. Phys. Lett. 92, 093110 (2008)
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603-146, Beijing 100080, People’s Republic of China;
27.
2007

Hoffmann E. A.; Nakpathomkun N.; Persson A. I.; Linke H.; Nilsson H. A.; Samuelson L.

Quantum-dot thermometry
Appl. Phys. Lett. 91, 252114 (2007)
Physics Department and Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1274, USA
28.
2007

Fuhrer A.; Fasth C.; Samuelson L.

Single electron pumping in InAs nanowire double quantum dots
Appl. Phys. Lett. 91, 052109 (2007)
Solid State Physics, The Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 Lund, Sweden
29.
2007

Fasth C.; Fuhrer A.; Samuelson L.; Golovach Vitaly N.; Loss Daniel

Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
Phys. Rev. Lett. 98, 266801 (2007)
Solid State Physics/Nanometer Consortium, Lund University, P.O. Box 118 Lund, Sweden
30.
2007

Trägårdh J.; Persson A. I.; Wagner J. B.; Hessman D.; Samuelson L.

Measurements of the band gap of wurtzite InAs1-x;Px nanowires using photocurrent spectroscopy
J. Appl. Phys. 101, 123701 (2007)
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00, Lund, Sweden
31.
2007

Wallin D.; Fuhrer A.; Fröberg L. E.; Samuelson L.; Xu H. Q.; Hofling S.; Forchel A.

Detection of charge states in nanowire quantum dots using a quantum point contact
Appl. Phys. Lett. 90, 172112 (2007)
Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
32.
2007

Mandl Bernhard; Stangl Julian; Mårtensson Thomas; Brehm Moritz; Fromherz Thomas; Bauer Günther; Samuelson Lars; Seifert Werner

Metal free growth and characterization of InAs1-x;Px nanowires
AIP Conf. Proc. 893, 97 (2007)
Institut für Halbleiter‐ und Festkörperphysik, Johannes Kepler Universität Linz, Altenbergerstr. 69, A‐4040 Linz, Austria;
33.
2007

Fasth C.; Fuhrer A.; Samuelson L.

Quantum dots defined in InAs quantum wires by local gate electrodes
AIP Conf. Proc. 893, 843 (2007)
Solid State Physics/Nanometer Consortium, Lund University, P.O. Box 118 Lund, Sweden
34.
2007

Liu R. S.; Pettersson H.; Michalak L.; Canali C. M.; Suyatin D.; Samuelson L.

Large magnetoresistance in Co/;Ni/;Co ferromagnetic single electron transistors
Appl. Phys. Lett. 90, 123111 (2007)
Center for Applied Mathematics and Physics, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden
35.
2007

Persson A. I.; Fröberg L. E.; Jeppesen S.; Björk M. T.; Samuelson L.

Surface diffusion effects on growth of nanowires by chemical beam epitaxy
J. Appl. Phys. 101, 034313 (2007)
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
36.
2006

Nilsson Henrik A.; Thelander Claes; Fröberg Linus E.; Wagner Jakob B.; Samuelson Lars

Nanowire-based multiple quantum dot memory
Appl. Phys. Lett. 89, 163101 (2006)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
37.
2006

Ellström C.; Trägårdh J.; Samuelson L.; Seifert W.; Pistol M.-E.; Lemeshko S.; Pryor C.

Investigations of InAs surface dots on InP
Appl. Phys. Lett. 89, 033111 (2006)
Solid State Physics, Box 118, Lund University, S-221 00 Lund, Sweden
38.
2006

Marlow C. A.; Bollaert S.; Wallart X.; Bayot V.; Gustin C.; Faniel S.; Hackens B.; Brown C. V.; Fromhold T. M.; Samuelson L.; Shorubalko I.; Hall G. D. R.; Fairbanks M. S.; Linke H.; Scannell B. C.; Martin T. P.; Taylor R. P.; Cappy A.

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices
Phys. Rev. B 73, 195318 (2006)
Materials Science Institute, Physics Department, University of Oregon, Eugene, Oregon 97403-1274, USA
39.
2005

Björk M. T.; Fuhrer A.; Hansen A. E.; Larsson M. W.; Fröberg L. E.; Samuelson L.

Tunable effective g factor in InAs nanowire quantum dots
Phys. Rev. B 72, 201307 (2005)
Solid State Physics/Nanometer Structure Consortium, Lund University, P.O. Box 118 Lund, Sweden
40.
2005

Persson J.; Håkanson U.; Johansson M. K.-J.; Samuelson L.; Pistol M.-E.

Strain effects on individual quantum dots: Dependence of cap layer thickness
Phys. Rev. B 72, 085302 (2005)
Solid State Physics/The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
41.
2005

Marlow C. A.; Löfgren A.; Shorubalko I.; Taylor R. P.; Omling P.; Samuelson L.; Linke H.

Preserved Symmetries in Nonlinear Electric Conduction
AIP Conf. Proc. 772, 1257 (2005)
Material Science Institute, Physics Department, University of Oregon, Eugene OR 97403‐1274;
42.
2005

Hansen A. E.; Björk M. T.; Fasth C.; Thelander C.; Samuelson L.

Spin relaxation in InAs nanowires studied by tunable weak antilocalization
Phys. Rev. B 71, 205328 (2005)
Solid State Physics/Nanometer Consortium, Lund University, P.O. Box 118 Lund, Sweden
43.
2005

Song A. M.; Missous M.; Omling P.; Maximov I.; Seifert W.; Samuelson L.

Nanometer-scale two-terminal semiconductor memory operating at room temperature
Appl. Phys. Lett. 86, 042106 (2005)
School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD, United Kingdom
44.
2004

Pettersson H.; Landin L.; Liu R.; Seifert W.; Pistol M.-E.; Samuelson L.

Photoexcitation of excitons in self-assembled quantum dots
Appl. Phys. Lett. 85, 5046 (2004)
Electronics and Physics Laboratory, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden
45.
2004

Persson Jonas; Hessman Dan; Pistol Mats-Erik; Seifert Werner; Samuelson Lars

Charging control of InP/;GaInP quantum dots by heterostructure design
Appl. Phys. Lett. 85, 5043 (2004)
Solid State Physics/The Nanometer Structure Consortium, Lund University, P. O. Box 118, SE-221 00 Lund, Sweden
46.
2004

Thelander C.; Björk M. T.; Mårtensson T.; Larsson M. W.; Hansen A. E.; Deppert K.; Sköld N.; Wallenberg L. R.; Seifert W.; Samuelson L.

Electrical Properties of InAs‐Based Nanowires
AIP Conf. Proc. 723, 449 (2004)
Solid State Physics, Lund University, Box 118, 221 00 Lund, Sweden
47.
2004

Krishnamachari U.; Borgstrom M.; Ohlsson B. J.; Panev N.; Samuelson L.; Seifert W.; Larsson M. W.; Wallenberg L. R.

Defect-free InP nanowires grown in [001] direction on ;InP (001)
Appl. Phys. Lett. 85, 2077 (2004)
Solid State Physics, Lund University, Box 118, S-221 00, Sweden
48.
2004

Panev Nikolay; Pistol Mats-Erik; Persson Jonas; Seifert Werner; Samuelson Lars

Spectroscopic studies of random telegraph noise in small InP quantum dots in GaxIn1-x;P
Phys. Rev. B 70, 073309 (2004)
Solid State Physics, Lund University, SE-221 00 Lund, Sweden
49.
2004

Persson J.; Aichele T.; Zwiller V.; Samuelson L.; Benson O.

Three-photon cascade from single self-assembled InP quantum dots
Phys. Rev. B 69, 233314 (2004)
Solid State Physics/The Nanometer Consortium, Lund University, P.O. Box 118, 221 00 Lund, Sweden;
50.
2004

Landin L.; Pettersson H.; Kleverman M.; Borgström M.; Zhang X.; Seifert W.; Samuelson L.

Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
J. Appl. Phys. 95, 8007 (2004)
Electronics and Physics Laboratory, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden;
51.
2004

Pettersson H.; Landin L.; Kleverman M.; Seifert W.; Samuelson L.; Fu Y.; Willander M.

Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
J. Appl. Phys. 95, 1829 (2004)
Electronics and Physics Laboratory, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden;
52.
2004

Löfgren A.; Samuelson L.; Omling P.; Taylor R. P.; Shorubalko I.; Marlow C. A.; Linke H.

Symmetry of Two-Terminal Nonlinear Electric Conduction
Phys. Rev. Lett. 92, 046803 (2004)
53.
2003

Borgstrom M.; Samuelson L.; Seifert W.; Mikkelsen A.; Ouattara L.; Lundgren E.

Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
Appl. Phys. Lett. 83, 4830 (2003)
Solid State Physics, Lund University, P.O. Box 118, SE-221 00, Sweden;
54.
2003

Håkanson U.; Håkanson H.; Johansson M. K.-J.; Samuelson L.; Pistol M.-E.

Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence
J. Vac. Sci. Technol. B 21, 2344 (2003)
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
55.
2003

Shorubalko I.; Xu H. Q.; Omling P.; Samuelson L.

Tunable nonlinear current–voltage characteristics of three-terminal ballistic nanojunctions
Appl. Phys. Lett. 83, 2369 (2003)
Division of Solid State Physics and Nanometer Consortium, Lund University, Box 118, 221 00 Lund, Sweden;
56.
2003

Johansson M. K.-J.; Håkanson U.; Holm M.; Persson J.; Sass T.; Johansson J.; Pryor C.; Samuelson L.; Seifert W.; Montelius L.; Pistol M.-E.

Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots
Phys. Rev. B 68, 125303 (2003)
Solid State Physics/Nanometer Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
57.
2003

Panev Nikolay; Persson Ann I.; Sköld Niklas; Samuelson Lars

Sharp exciton emission from single InAs quantum dots in GaAs nanowires
Appl. Phys. Lett. 83, 2238 (2003)
Solid State Physics, Lund University, SE-221 00 Lund, Sweden;
58.
2003

Thelander C.; Mårtensson T.; Björk M. T.; Ohlsson B. J.; Larsson M. W.; Wallenberg L. R.; Samuelson L.

Single-electron transistors in heterostructure nanowires
Appl. Phys. Lett. 83, 2052 (2003)
Solid State Physics/Nanometer Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden;
59.
2003

Song A. M.; Missous M.; Omling P.; Peaker A. R.; Samuelson L.; Seifert W.

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
Appl. Phys. Lett. 83, 1881 (2003)
Department of Electrical Engineering and Electronics, UMIST, Manchester M60 1QD, United Kingdom;
60.
2003

Bryllert T.; Borgstrom M.; Wernersson L-E.; Seifert W.; Samuelson L.

Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
Appl. Phys. Lett. 82, 2655 (2003)
Solid State Physics, University of Lund, Box 118, S-221 00, Sweden;
61.
2003

Zwiller V.; Fälth S.; Persson J.; Seifert W.; Samuelson L.; Björk G.

Fabrication and time-resolved studies of visible microdisk lasers
J. Appl. Phys. 93, 2307 (2003)
Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden;
62.
2003

Håkanson U.; Zwiller V.; Johansson M. K.-J.; Sass T.; Samuelson L.

Luminescence polarization of ordered GaInP/InP islands
Appl. Phys. Lett. 82, 627 (2003)
Solid State Physics/Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
63.
2003

Persson J.; Holm M.; Pryor C.; Hessman D.; Seifert W.; Samuelson L.; Pistol M.-E.

Optical and theoretical investigations of small InP quantum dots in GaxIn1-x;P
Phys. Rev. B 67, 035320 (2003)
Solid State Physics/The Nanometer Consortium, Lund University, P.O. Box 118, 221 00 Lund, Sweden;
64.
2002

Håkanson U.; Sass T.; Johansson M. K.-J.; Pistol M.-E.; Samuelson L.

Quantum-dot-induced ordering in GaxIn1-x;P/InP islands
Phys. Rev. B 66, 235308 (2002)
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden
65.
2002

Björk M. T.; Ohlsson B. J.; Thelander C.; Persson A. I.; Deppert K.; Wallenberg L. R.; Samuelson L.

Nanowire resonant tunneling diodes
Appl. Phys. Lett. 81, 4458 (2002)
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
66.
2002

Håkanson U.; Johansson M. K.-J.; Holm M.; Pryor C.; Samuelson L.; Seifert W.; Pistol M.-E.

Photon mapping of quantum dots using a scanning tunneling microscope
Appl. Phys. Lett. 81, 4443 (2002)
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
67.
2002

Zwiller Valéry; Jonsson Per; Blom Hans; Jeppesen Sören; Pistol Mats-Erik; Samuelson Lars; Katznelson A. A.; Kotelnikov E. Yu.; Evtikhiev Vadim; Björk Gunnar

Correlation spectroscopy of excitons and biexcitons on a single quantum dot
Phys. Rev. A 66, 053814 (2002)
Department of Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden;
68.
2002

Ohlsson B. J.; Malm J.-O.; Gustafsson A.; Samuelson L.

Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings
Appl. Phys. Lett. 80, 4546 (2002)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
69.
2002

Åberg Ingvar; Deppert Knut; Magnusson Martin H.; Pietzonka Ines; Seifert Werner; Wernersson Lars-Erik; Samuelson Lars

Nanoscale tungsten aerosol particles embedded in GaAs
Appl. Phys. Lett. 80, 2976 (2002)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
70.
2002

Bryllert T.; Borgstrom M.; Sass T.; Gustafson B.; Landin L.; Wernersson L.-E.; Seifert W.; Samuelson L.

Designed emitter states in resonant tunneling through quantum dots
Appl. Phys. Lett. 80, 2681 (2002)
Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden;
71.
2002

Wernersson L.-E.; Borgström M.; Gustafson B.; Gustafsson A.; Pietzonka I.; Pistol M.-E.; Sass T.; Seifert W.; Samuelson L.

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
Appl. Phys. Lett. 80, 1841 (2002)
Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;
72.
2002

Wernersson L.-E.; Samuelson L.; Seifert W.; Pettersson H.; Nilsson N.; Montelius L.; Löfgren A.; Gustafsson A.; Georgsson K.; Malm J.-O.

Epitaxially overgrown, stable W–GaAs Schottky contacts with sizes down to 50 nm
J. Vac. Sci. Technol. B 20, 580 (2002)
Solid State Physics/Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden;
73.
2002

Pettersson H.; Bååth L.; Carlsson N.; Seifert W.; Samuelson L.

Optically induced charge storage and current generation in InAs quantum dots
Phys. Rev. B 65, 073304 (2002)
Electronics and Physics Laboratory, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden;
74.
2002

Lewén R.; Maximov I.; Shorubalko I.; Samuelson L.; Thylén L.; Xu H. Q.

High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
J. Appl. Phys. 91, 2398 (2002)
Department of Electronics, Laboratory of Photonics and Microwave Engineering, Royal Institute of Technology, 164 40 Kista, Sweden;
75.
2002

Björk M. T.; Ohlsson B. J.; Sass T.; Persson A. I.; Thelander C.; Magnusson M. H.; Deppert K.; Wallenberg L. R.; Samuelson L.

One-dimensional heterostructures in semiconductor nanowhiskers
Appl. Phys. Lett. 80, 1058 (2002)
Solid State Physics/Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
76.
2002

Junno T.; Carlsson S. -B.; Xu H. Q.; Samuelson L.; Orlov A. O.; Snider G. L.

Single-electron tunneling effects in a metallic double dot device
Appl. Phys. Lett. 80, 667 (2002)
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
77.
2002

Håkanson U.; Johansson M. K.-J.; Persson J.; Johansson J.; Pistol M.-E.; Montelius L.; Samuelson L.

Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
Appl. Phys. Lett. 80, 494 (2002)
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
78.
2002

Håkanson U.; Ohlsson B. J.; Montelius L.; Samuelson L.

Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111)
J. Vac. Sci. Technol. B 20, 226 (2002)
Division of Solid State Physics and The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden
79.
2001

Hessman Dan; Persson Jonas; Pistol Mats-Erik; Pryor Craig; Samuelson Lars

Electron accumulation in single InP quantum dots observed by photoluminescence
Phys. Rev. B 64, 233308 (2001)
Solid State Physics/Nanometer Structure Consortium, Lund University, P. O. Box 118, 221 00 Lund, Sweden
80.
2001

Ohlsson B. J.; Björk M. T.; Magnusson M. H.; Deppert K.; Samuelson L.; Wallenberg L. R.

Size-, shape-, and position-controlled GaAs nano-whiskers
Appl. Phys. Lett. 79, 3335 (2001)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
81.
2001

Worschech L.; Xu H. Q.; Forchel A.; Samuelson L.

Bias-voltage-induced asymmetry in nanoelectronic Y-branches
Appl. Phys. Lett. 79, 3287 (2001)
Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany;
82.
2001

Thelander Claes; Magnusson Martin H.; Deppert Knut; Samuelson Lars; Poulsen Per Rugaard; Nygård Jesper; Borggreen Jørn

Gold nanoparticle single-electron transistor with carbon nanotube leads
Appl. Phys. Lett. 79, 2106 (2001)
Solid State Physics/Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
83.
2001

Song Aimin M.; Omling Pär; Samuelson Lars; Seifert Werner; Shorubalko Ivan; Zirath Herbert

Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz
Jpn. J. Appl. Phys., Part 2 40, L909 (2001)
Solid State Physics and Nanometer Structure Consortium, Lund University, 221 00 Lund, Sweden
84.
2001

Shorubalko I.; Xu H. Q.; Maximov I.; Omling P.; Samuelson L.; Seifert W.

Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions
Appl. Phys. Lett. 79, 1384 (2001)
Solid State Physics and Nanometer Consortium, Lund University, Box 118, S-22100 Lund, Sweden;
85.
2001

Song A. M.; Omling P.; Samuelson L.; Seifert W.; Shorubalko I.; Zirath H.

Room-temperature and 50 GHz operation of a functional nanomaterial
Appl. Phys. Lett. 79, 1357 (2001)
Solid State Physics and Nanometer Structure Consortium, Lund University, 221 00 Lund, Sweden;
86.
2001

Panev N.; Pistol M.-E.; Zwiller V.; Samuelson L.; Jiang W.; Xu B.; Wang Z.

Random telegraph noise in the photoluminescence of individual GaxIn1-x;As quantum dots in GaAs
Phys. Rev. B 64, 045317 (2001)
Solid State Physics, Box 118, Lund University, S-221 00 Lund, Sweden;
87.
2001

Pettersson H.; Bȧȧth L.; Carlsson N.; Seifert W.; Samuelson L.

Case study of an InAs quantum dot memory: Optical storing and deletion of charge
Appl. Phys. Lett. 79, 78 (2001)
Electronics and Physics Laboratory, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden;
88.
2001

Zwiller Valéry; Seifert Werner; Castrillo Pedro; Pryor Craig; Pistol Mats-Erik; Jarlskog Linda; Samuelson Lars

Photoluminescence polarization of single InP quantum dots
Phys. Rev. B 63, 233301 (2001)
Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden;
89.
2001

Krinke Thomas J.; Fissan Heinz; Deppert Knut; Magnusson Martin H.; Samuelson Lars

Positioning of nanometer-sized particles on flat surfaces by direct deposition from the gas phase
Appl. Phys. Lett. 78, 3708 (2001)
Process and Aerosol Measurement Technology, Gerhard-Mercator-University Duisburg, D-47048 Duisburg, Germany;
90.
2001

Borgstrom M.; Bryllert T.; Sass T.; Gustafson B.; Wernersson L.-E.; Seifert W.; Samuelson L.

High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks
Appl. Phys. Lett. 78, 3232 (2001)
Solid State Physics, University of Lund, Box 118, S-221 00, Sweden;
91.
2001

Zwiller Valéry; Blom Hans; Jonsson Per; Panev Nikolay; Jeppesen Sören; Tsegaye Tedros; Goobar Edgard; Pistol Mats-Erik; Samuelson Lars; Björk Gunnar

Single quantum dots emit single photons at a time: Antibunching experiments
Appl. Phys. Lett. 78, 2476 (2001)
Solid State Physics, Lund University, SE-22100 Lund, Sweden;
92.
2001

Borgstrom M.; Johansson J.; Samuelson L.; Seifert W.

Electron beam prepatterning for site control of self-assembled quantum dots
Appl. Phys. Lett. 78, 1367 (2001)
Solid State Physics, University of Lund, Box 118, S-221 00, Sweden;
93.
2000

Johansson Jonas; Malm Jan-Olle; Svensson Chatrin; Samuelson Lars; Seifert Werner; Gustafsson Anders; Thelander Claes; Zwiller Valery; Falk Lena

Indium enrichment in Ga1-x;InxP self-assembled quantum dots
J. Appl. Phys. 88, 6378 (2000)
Solid State Physics, Lund University, S-221 00 Lund, Sweden
94.
2000

Wang Qin; Carlsson N.; Maximov I.; Omling P.; Samuelson L.; Seifert W.; Sheng Weidong; Shorubalko I.; Xu H. Q.

Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides
Appl. Phys. Lett. 76, 2274 (2000)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
95.
2000

Chen Wei; Malm Jan-Olle; Zwiller Valery; Huang Yining; Liu Shuman; Wallenberg Reine; Bovin Jan-Olov; Samuelson Lars

Energy structure and fluorescence of Eu²⁺ in ZnS:Eu nanoparticles
Phys. Rev. B 61, 11021 (2000)
Centre for Chemical Physics and Department of Chemistry, University of Western Ontario, London, Ontario, Canada N6A 3K7;
96.
2000

Wang Qin; Carlsson N.; Omling P.; Samuelson L.; Seifert W.; Xu H. Q.

Effects of charged self-assembled quantum dots on two-dimensional quantum transport
Appl. Phys. Lett. 76, 1704 (2000)
Solid State Physics, Lund University, S-221 00 Lund, Sweden;
97.
2000

Pettersson H.; Pryor C.; Landin L.; Pistol M.-E.; Carlsson N.; Seifert W.; Samuelson L.

Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence
Phys. Rev. B 61, 4795 (2000)
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
98.
1999

Landin L.; Pistol M.-E.; Pryor C.; Persson M.; Samuelson L.; Miller M.

Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes
Phys. Rev. B 60, 16640 (1999)
Department of Solid State Physics, Box 118, Lund University, S-221 00 Lund, Sweden;
99.
1999

Pettersson H.; Warburton R. J.; Kotthaus J. P.; Carlsson N.; Seifert W.; Pistol M.-E.; Samuelson L.

Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system
Phys. Rev. B 60, R11289 (1999)
Center for Nanoscience and Sektion Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 Munich, Germany;
100.
1999

Zorn M.; Zettler J.-T.; Samuelson L.; Bose S.; Trepk T.; Junno B.; Richter W.

Optical response of reconstructed GaP(001) surfaces
Phys. Rev. B 60, 11557 (1999)
Institut für Festkörperphysik, Technische Universität Berlin, Sekr. PN 6-1, Hardenbergstraße 36, D-10623 Berlin, Germany;
101.
1999

Zorn M.; Kurpas P.; Shkrebtii A. I.; Junno B.; Bhattacharya A.; Knorr K.; Weyers M.; Samuelson L.; Zettler J. T.; Richter W.

Correlation of InGaP(001) surface structure during growth and bulk ordering
Phys. Rev. B 60, 8185 (1999)
Institut für Festkörperphysik, Technische Universität Berlin, Sekr. PN 6-1, Hardenbergstraße 36, D-10623 Berlin, Germany;
102.
1999

Carlsson Sven-Bertil; Junno Tobias; Montelius Lars; Samuelson Lars

Mechanical tuning of tunnel gaps for the assembly of single-electron transistors
Appl. Phys. Lett. 75, 1461 (1999)
Solid State Physics/The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden;
103.
1999

Petersson Anders; Gustafsson Anders; Samuelson Lars; Tanaka Satoru; Aoyagi Yoshinobu

Cathodoluminescence spectroscopy and imaging of individual GaN dots
Appl. Phys. Lett. 74, 3513 (1999)
Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden;
104.
1999

Suhara Michihiko; Wernersson Lars-Erik; Gustafson Boel; Carlsson Niclas; Seifert Werner; Gustafsson Anders; Malm Jan-Olle; Litwin Andrej; Samuelson Lars; Furuya Kazuhito

Gated tunneling structures with buried tungsten grating adjacent to semiconductor heterostructures
Jpn. J. Appl. Phys., Part 1 38, 3466 (1999)
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;
105.
1999

Pistol M-E.; Prieto J. A.; Hessman D.; Castrillo P.; Samuelson L.

Random telegraph noise in photoluminescence from individual self-assembled quantum dots
Phys. Rev. B 59, 10725 (1999)
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
106.
1999

Zwiller Valéry; Pistol Mats-Erik; Hessman Dan; Cederström Rolf; Seifert Werner; Samuelson Lars

Time-resolved studies of single semiconductor quantum dots
Phys. Rev. B 59, 5021 (1999)
Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
107.
1999

Deppert Knut; Bovin Jan-Olov; Magnusson Martin H.; Malm Jan-Olle; Svensson Chatrin; Samuelson Lars

Aerosol fabrication of nanocrystals of InP
Jpn. J. Appl. Phys., Part 1 38, 1056 (1999)
Lund University, Solid State Physics, Box 118, S-221 00 Lund, Sweden;
108.
1999

Wernersson Lars-Erik; Suhara Michihiko; Carlsson Niclas; Furuya Kazuhito; Gustafson Boel; Litwin Andrej; Samuelson Lars; Seifert Werner

Lateral confinement in a resonant tunneling transistor with a buried metallic gate
Appl. Phys. Lett. 74, 311 (1999)
Solid State Physics/Nanometer Structure Consortium, Lund University S-221 00 Lund, Sweden;
109.
1999

Gustafson Boel; Carlsson Niclas; Fukui Takashi; Litwin Andrei; Maximov Ivan; Sarwe Eva-Lena; Seifert Werner; Wernersson Lars-Erik; Samuelson Lars

Novel approach for lateral current confinement in vertical resonant tunneling devices
Jpn. J. Appl. Phys., Part 1 38, 343 (1999)
Division of Solid State Physics, Land University, Box 118, S-22100, Sweden
110.
1998

Anand S.; Carlsson N.; Pistol M.-E.; Samuelson L.; Seifert W.

Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy
J. Appl. Phys. 84, 3747 (1998)
Department of Solid State Physics, Lund University, Box 118, S-22100 LUND, Sweden;
111.
1998

Nomura S.; Samuelson L.; Pryor C.; Pistol M.-E.; Stopa M.; Uchida K.; Miura N.; Sugano T.; Aoyagi Y.

Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation
Phys. Rev. B 58, 6744 (1998)
The Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama, Japan
112.
1998

Wernersson L.-E.; Litwin A.; Montelius L.; Pettersson H.; Samuelson L.; Seifert W.

Kinetics of electron charging and discharging on embedded W disks in GaAs
Phys. Rev. B 58, R4207 (1998)
Solid State Physics/Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
113.
1998

Ramvall P.; Carlsson N.; Omling P.; Samuelson L.; Seifert W.; Wang Q.; Ishibashi K.; Aoyagi Y.

Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells
J. Appl. Phys. 84, 2112 (1998)
Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden;
114.
1998

Gustafsson Anders; Pistol Mats-Erik; Montelius Lars; Samuelson Lars

Local probe techniques for luminescence studies of low-dimensional semiconductor structures
J. Appl. Phys. 84, 1715 (1998)
Division of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
115.
1998

Machida Nobuya; Hansson Björn; Furuya Kazuhito; Wernersson Lars-Erik; Samuelson Lars

Proposal for a solid state biprism device
Jpn. J. Appl. Phys., Part 1 37, 4311 (1998)
Department of Solid State Physics/Nanometer Structure Consortium, Lund University, S-221 00 Lund, Sweden;
116.
1998

Kowalski B.; Omling P.; Pistol M. E.; Miller M. S.; Varekamp P. R.; Wiggren C.; Zwiller V.; Samuelson L.

Conduction band spin splitting in InxGa1-x;As/GaAs quantum wells
Jpn. J. Appl. Phys., Part 1 37, 4272 (1998)
Division of Solid State Physics and the Nanometer Structure Consortium, University of Lund, Box 118, S-221 00 Lund, Sweden
117.
1998

Kowalski B.; Nomura S.; Pryor C.; Aoyagi Y.; Carlsson N.; Pistol M.-E.; Omling P.; Samuelson L.; Seifert W.

Magnetoluminescence of self-assembled InP dots of various sizes
Phys. Rev. B 58, 2026 (1998)
Solid State Physics, Lund University, Box 118, 221 00 Lund, Sweden;
118.
1998

Wernersson L.-E.; Litwin A.; Montelius L.; Pettersson H.; Samuelson L.

Coulomb effects on charged, buried metal disks at room temperature
Appl. Phys. Lett. 72, 2610 (1998)
Solid State Physics/Nanometer Structure Consortium, Lund University, Box 118, S-22100 Lund, Sweden;
119.
1998

Junno B.; Miller M. S.; Jeppesen S.; Samuelson L.

Effects of Ga and As desorption on the chemical beam epitaxy growth of (001) GaAs as measured by reflection high energy electron diffraction
J. Appl. Phys. 83, 4513 (1998)
Applied Solid State Physics, Chalmers University, S-41258 Gothenburg, Sweden;
120.
1998

Junno B.; Junno T.; Miller M. S.; Samuelson L.

A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of InAs and InP islands on (001) GaP
Appl. Phys. Lett. 72, 954 (1998)
Department of Solid State Physics, Lund University, S-221 00 Lund, Sweden;
121.
1998

Junno T.; Carlsson S.-B.; Xu Hongqi; Montelius L.; Samuelson L.

Fabrication of quantum devices by Ångström-level manipulation of nanoparticles with an atomic force microscope
Appl. Phys. Lett. 72, 548 (1998)
Solid State Physics/Nanometer Structure Consortium, Lund University, S-221 00 Lund, Sweden;
122.
1997

Wernersson Lars-Eric; Litwin Andrej; Samuelson Lars; Seifert Wermer

Controlled Carrier Depletion around Nano-Scale Metal Discs Embedded in GaAs
Jpn. J. Appl. Phys., Part 2 36, L1628 (1997)
Solid State Physics/Nanometer Structure Consortium Lund University, Box 118, S-221 00 Lund, Sweden
123.
1997

Wernersson L.-E.; Carlsson N.; Gustafson B.; Litwin A.; Samuelson L.

Lateral current-constriction in vertical devices using openings in buried lattices of metallic discs
Appl. Phys. Lett. 71, 2803 (1997)
Solid State Physics/Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
124.
1997

Nomura S.; Samuelson L.; Pistol M.-E.; Uchida K.; Miura N.; Sugano T.; Aoyagi Y.

Landau level formation in semiconductor quantum dots in a high magnetic field
Appl. Phys. Lett. 71, 2316 (1997)
The Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama, Japan
125.
1997

Pryor Craig; Pistol M-E.; Samuelson L.

Electronic structure of strained InP/Ga0.51In0.49P quantum dots
Phys. Rev. B 56, 10404 (1997)
Department of Solid State Physics, Box 118, Lund University, S-221 00 Lund, Sweden
126.
1997

Ramvall P.; Carlsson N.; Maximov I.; Omling P.; Samuelson L.; Seifert W.; Wang Q.; Lourdudoss S.

Quantized conductance in a heterostructurally defined Ga0.25In0.75As/InP quantum wire
Appl. Phys. Lett. 71, 918 (1997)
Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
127.
1997

Ozasa Kazunari; Aoyagi Yoshinobu; Park Young Ju; Samuelson Lars

Reversible transition between InGaAs dot structure and InGaAsP flat surface
Appl. Phys. Lett. 71, 797 (1997)
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan
128.
1997

Castrillo Pedro; Hessman Dan; Pistol Mats-Erik; Prieto Jose Antonio; Pryor Craig; Samuelson Lars

Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots
Jpn. J. Appl. Phys., Part 1 36, 4188 (1997)
Solid State Physics/Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, Sweden
129.
1997

Ahopelto J.; Sopanen M.; Lipsanen H.; Lourdudoss S.; Rodriguez Messmer E.; Höfling E.; Reithmaier J. P.; Forchel A.; Petersson A.; Samuelson L.

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Appl. Phys. Lett. 70, 2828 (1997)
VTT Microelectronics, Otakaari 7 B, FIN-02150 Espoo, Finland
130.
1997

Ramvall P.; Carlsson N.; Omling P.; Samuelson L.; Seifert W.; Wang Q.

Tuning of the single-particle relaxation time of a high mobility electron gas in a Ga0.25In0.75As/InP quantum well
Appl. Phys. Lett. 70, 243 (1997)
Solid State Physics, Lund University, S-221 00 Lund, Sweden
131.
1996

Miller Mark S.; Malm Jan-Olle; Pistol Mats-Erik; Georgsson Kristina; Kowalski Bernhard; Jeppesen Søren; Samuelson Lars

Stacking InAs islands and GaAs layers: Strongly modulated one‐dimensional electronic systems
J. Appl. Phys. 80, 3360 (1996)
Department of Solid State Physics and the Nanometer Structure Consortium, Lund University, S‐221 00 Lund, Sweden;
132.
1996

Hessman D.; Castrillo P.; Pistol M.-E.; Pryor C.; Samuelson L.

Excited states of individual quantum dots studied by photoluminescence spectroscopy
Appl. Phys. Lett. 69, 749 (1996)
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S‐221 00 Lund, Sweden;
133.
1996

Anand S.; Lindahl J.; Pistol M-E.; Samuelson L.

Sharp line injection luminescence from InP quantum dots buried in GaInP
J. Appl. Phys. 80, 1251 (1996)
Department of Solid State Physics, Lund University, Box 118, S‐22100 Lund, Sweden;
134.
1996

Anand S.; Carlsson S-B.; Deppert K.; Montelius L.; Samuelson L.

Electron transport at Au/InP interface with nanoscopic exclusions
J. Vac. Sci. Technol. B 14, 2794 (1996)
Department of Solid State Physics, Lund University, Box 118, S‐22100 Lund, Sweden;
135.
1996

Pettersson H.; Anand S.; Grimmeiss H. G.; Samuelson L.

Optical properties of strained InP quantum dots in Ga0.5In0.5P studied by space‐charge techniques
Phys. Rev. B 53, R10497 (1996)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
136.
1996

Jeppesen Søren; Miller Mark S.; Hessman Dan; Kowalski Bernhard; Maximov Ivan; Samuelson Lars

Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
Appl. Phys. Lett. 68, 2228 (1996)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
137.
1996

Seifert W.; Carlsson N.; Petersson A.; Wernersson L.-E.; Samuelson L.

Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces
Appl. Phys. Lett. 68, 1684 (1996)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund/Sweden;
138.
1996

Deppert Knut; Samuelson Lars

Self‐limiting transformation of monodisperse Ga droplets into GaAs nanocrystals
Appl. Phys. Lett. 68, 1409 (1996)
Lund University, Department of Solid State Physics, Box 118, S‐221 00 Lund, Sweden;
139.
1996

Ramvall P.; Carlsson N.; Omling P.; Samuelson L.; Seifert W.; Stolze M.; Wang Q.

Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two‐dimensional electron gas mobilities
Appl. Phys. Lett. 68, 1111 (1996)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
140.
1996

Ramvall P.; Samuelson L.; Xu Hongqi; Du Qinghong; Omling P.

Effects of interchannel coupling in a two‐dimensional electron gas at high magnetic fields
Phys. Rev. B 53, 1933 (1996)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
141.
1996

Wernersson Lars-Erik; Samuelson Lars; Litwin Andrej; Georgsson Kristina; Seifert Werner

Planarization of epitaxial GaAs overgrowth over tungsten wires
J. Appl. Phys. 79, 500 (1996)
Department of Solid State Physics ‘‘Nanometer Structure’’ Consortium, Lund University, S‐221 00 Lund, Sweden;
142.
1996

Lindahl J.; Pistol M.-E.; Montelius L.; Samuelson L.

Stark effect in individual luminescent centers observed by tunneling luminescence
Appl. Phys. Lett. 68, 60 (1996)
Department of Solid State Physics and Nanometer Structure Consortium, University of Lund, Box 118, S‐221 00 Lund, Sweden;
143.
1995

Anand S.; Carlsson N.; Pistol M-E; Samuelson L.; Seifert W.

Deep level transient spectroscopy of InP quantum dots
Appl. Phys. Lett. 67, 3016 (1995)
Department of Solid State Physics, Lund University, Box 118, S‐22100 Lund, Sweden;
144.
1995

Georgsson K.; Carlsson N.; Samuelson L.; Seifert W.; Wallenberg L. R.

Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 2981 (1995)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
145.
1995

Castrillo P.; Hessman D.; Pistol M.-E.; Anand S.; Carlsson N.; Seifert W.; Samuelson L.

Band filling at low optical power density in semiconductor dots
Appl. Phys. Lett. 67, 1905 (1995)
Department of Solid State Physics, Lund University, Box 118, S‐22100 Lund, Sweden;
146.
1995

Pistol M.-E.; Carlsson N.; Persson C.; Seifert W.; Samuelson L.

Observation of strain effects in semiconductor dots depending on cap layer thickness
Appl. Phys. Lett. 67, 1438 (1995)
Department of Solid State Physics, Box 118, Lund University, S‐221 00 Lund, Sweden;
147.
1995

Seifert W.; Carlsson N.; Pistol M.-E.; Samuelson L.

Comment on ‘‘Nanoscale InP islands embedded in InGaP’’ [Appl. Phys. Lett. ;66, 361 (1995)]
Appl. Phys. Lett. 67, 1166 (1995)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
148.
1995

Junno T.; Deppert K.; Montelius L.; Samuelson L.

Controlled manipulation of nanoparticles with an atomic force microscope
Appl. Phys. Lett. 66, 3627 (1995)
Department of Solid State Physics and Nanometer Structure Consortium, Lund University, Box 118, S‐221 00 Lund, Sweden;
149.
1995

Junno T.; Anand S.; Deppert K.; Montelius L.; Samuelson L.

Contact mode atomic force microscopy imaging of nanometer‐sized particles
Appl. Phys. Lett. 66, 3295 (1995)
Department of Solid State Physics and Nanometer Structure Consortium, Lund University, Box 118, S‐221 00 Lund, Sweden;
150.
1995

Samuelson Lars; Gustafsson Anders

Imaging and spectroscopic studies of individual impurities in quantum structures
Phys. Rev. Lett. 74, 2395 (1995)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
151.
1995

Linke H.; Maximov I.; Hessman D.; Emanuelsson P.; Qin Wang; Samuelson L.; Omling P.; Meyer B. K.

Damage induced by plasma etching: On the correlation of results from photoluminescence and transport characterization techniques
Appl. Phys. Lett. 66, 1403 (1995)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
152.
1995

Gustafsson A.; Samuelson L.; Hessman D.; Malm J.-O.; Vermeire G.; Demeester P.

Characterization of a single‐layer quantum wire structure grown directly on a submicron grating
J. Vac. Sci. Technol. B 13, 308 (1995)
Department of Solid State Physics and The Nanometer Structure Consortium, Lund University, Box 118, S‐221 00 Lund, Sweden;
153.
1994

Carlsson N.; Seifert W.; Petersson A.; Castrillo P.; Pistol M. E.; Samuelson L.

Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures
Appl. Phys. Lett. 65, 3093 (1994)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
154.
1994

Gustafsson A.; Samuelson L.

Cathodoluminescence imaging of quantum wells: The influence of exciton transfer on the apparent island size
Phys. Rev. B 50, 11827 (1994)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
155.
1994

Samuelson L.; Vermeire G.; Malm J.-O.; Pistol M.-E.; Montelius L.; Lindahl J.; Gustafsson A.; Demeester P.

Scanning tunneling microscope and electron beam induced luminescence in quantum wires
J. Vac. Sci. Technol. B 12, 2521 (1994)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 LUND, Sweden;
156.
1994

Hessman D.; Pistol M.-E.; Olajos J.; Samuelson L.

Absorption in InP/GaAs/InP type‐II quantum wells
Phys. Rev. B 49, 17118 (1994)
Department of Solid State Physics, Box 118 Lund University, 221 00 Lund, Sweden
157.
1994

Deppert Knut; Maximov Ivan; Samuelson Lars; Hansson Hans-Christen; Weidensohler Alfred

Sintered aerosol masks for dry‐etched quantum dots
Appl. Phys. Lett. 64, 3293 (1994)
Department of Solid State Physics, Lund University, Box 118, S‐22100 Lund, Sweden;
158.
1994

Gustafsson A.; Samuelson L.; Malm J.-O.; Vermeire G.; Demeester P.

Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating
Appl. Phys. Lett. 64, 695 (1994)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
159.
1994

Seifert W.; Hessman D.; Liu X.; Samuelson L.

Formation of interface layers in GaxIn1-;xAs/InP heterostructures; A re‐evaluation using ultrathin quantum wells as a probe
J. Appl. Phys. 75, 1501 (1994)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
160.
1993

Jönsson Jan; Deppert Knut; Samuelson Lars

Real‐time monitoring of the reaction of H;2S on GaAs
J. Appl. Phys. 74, 6146 (1993)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
161.
1993

Maximov I.; Gustafsson A.; Hansson H.-C.; Samuelson L.; Seifert W.; Wiedensohler A.

Fabrication of quantum dot structures using aerosol deposition and plasma etching techniques
J. Vac. Sci. Technol. A 11, 748 (1993)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00, Lund, Sweden;
162.
1993

Gustafsson A.; Liu X.; Maximov I.; Samuelson L.; Seifert W.

Reevaluation of blueshifts introduced by lateral confinement in quantum‐well wire structures
Appl. Phys. Lett. 62, 1709 (1993)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
163.
1993

Gerling M.; Paulsson G.; Pistol M.-E.; Samuelson L.

Optical properties of thin, strained layers of GaAsxP1-;x grown on (111)‐oriented GaP
Phys. Rev. B 47, 6408 (1993)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
164.
1993

Seifert W.; Liu X.; Samuelson L.

Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures
Appl. Phys. Lett. 62, 949 (1993)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
165.
1993

Liu X.; Nilsson S.; Samuelson L.; Seifert W.; Souza P. L.

Extended, monolayer flat islands and exciton dynamics in Ga0.47In0.53As/InP quantum‐well structures
Phys. Rev. B 47, 2203 (1993)
Department of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
166.
1992

Deppert K.; Jönsson J.; Samuelson L.

Optical detection of growth oscillations from high vacuum up to low‐pressure metalorganic vapor phase epitaxy like conditions
Appl. Phys. Lett. 61, 1558 (1992)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
167.
1992

Pistol Mats-Erik; Gerling Maria; Gustafsson Anders; Hessman Dan; Samuelson Lars; Fornell J. O.; Ledebo L.-A.; Seifert Werner

Optical properties of InP/GaAs/InP strained layers
Proc. SPIE Int. Soc. Opt. Eng. 1675, 194 (1992)
Univ. of Lund (Sweden)
168.
1992

Samuelson Lars; Georgsson Kristina; Gustafsson Anders; Maximov Ivan; Montelius Lars; Nilsson Stefan; Seifert Werner; Semu Allen

Fabrication and imaging of quantum-well wire structures
Proc. SPIE Int. Soc. Opt. Eng. 1676, 154 (1992)
Lund Univ. (Sweden)
169.
1992

Wiedensohler Alfred; Hansson Hans-Christen; Maximov Ivan; Samuelson Lars

Nanometer patterning of InP using aerosol and plasma etching techniques
Appl. Phys. Lett. 61, 837 (1992)
Department of Nuclear Physics, Lund University, Sölvegatan 14, S‐223 62 LUND, Sweden;
170.
1992

Samuelson Lars; Deppert Knut; Junno Bert; Joensson Jan; Paulsson Gert

Reflectance difference for in-situ characterization of surfaces and epitaxial growth of GaAs on (001) GaAs
Proc. SPIE Int. Soc. Opt. Eng. 1678, 268 (1992)
Univ. of Lund (Sweden)
171.
1992

Pistol Mats-Erik; Montelius Lars; Lindahl Joakim; Samuelson Lars

Spectrally resolved luminescence of InP at low temperatures using minority carrier injection from a scanning tunneling microscope tip
Proc. SPIE Int. Soc. Opt. Eng. 1678, 15 (1992)
Univ. of Lund (Sweden)
172.
1992

Pistol M.-E.; Gerling M.; Hessman D.; Samuelson L.

Properties of thin strained layers of GaAs grown on InP
Phys. Rev. B 45, 3628 (1992)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
173.
1991

Omling P.; Yang B. H.; Samuelson L.; Yakimova R.; Fornell J.-O.; Ledebo L.

Electronic properties of the SbGa heteroantisite defect in GaAs:Sb
Phys. Rev. B 44, 13398 (1991)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
174.
1991

Yakimova R.; Omling P.; Yang B. H.; Samuelson L.; Fornell J.-O.; Ledebo L.

On the formation of the SbGa heteroantisite in metalorganic vapor‐phase epitaxial GaAs;Sb
Appl. Phys. Lett. 59, 1323 (1991)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
175.
1991

Gerling M.; Pistol M.-E.; Samuelson L.; Seifert W.; Fornell J.-O.; Ledebo L.

Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure
Appl. Phys. Lett. 59, 806 (1991)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
176.
1991

Jönsson J.; Paulsson G.; Samuelson L.

Reflectance difference for insitu control of surface V/III ratio during epitaxial growth of GaAs
J. Appl. Phys. 70, 1737 (1991)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
177.
1991

Gustafsson A.; Pistol M.-E.; Gerling M.; Samuelson L.; Titze H.

Dislocations in mismatched layers of GaAsxP1-;x in between GaP as observed by low‐temperature cathodoluminescence; Part II. Grown on (111) oriented substrates
J. Appl. Phys. 70, 1667 (1991)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
178.
1991

Gustafsson A.; Pistol M.-E.; Gerling M.; Samuelson L.; Leys M. R.; Titze H.

Dislocations in mismatched layers of GaAsxP1-;x in between GaP as observed by low‐temperature cathodoluminescence; Part I. Grown on (001) oriented substrates.
J. Appl. Phys. 70, 1660 (1991)
Department of Solid State Physics, Lund University, Box 118, S‐221 00 Lund, Sweden;
179.
1990

Liu X.; Samuelson L.; Pistol M.-E.; Gerling M.; Nilsson S.

Donor states in GaAs under hydrostatic pressure
Phys. Rev. B 42, 11791 (1990)
Department of Solid State Physics, University of Lund, P. O. Box 118, S‐221∥00 Lund, Sweden;
180.
1990

Liu X.; Pistol M.-E.; Samuelson L.

Excitons bound to nitrogen pairs in GaAs
Phys. Rev. B 42, 7504 (1990)
Department of Solid State Physics, University of Lund, P.O. Box 118, S‐221∥00 Lund, Sweden;
181.
1990

Nilsson S.; Gustafsson A.; Samuelson L.

Cathodoluminescence observation of extended monolayer‐flat terraces at the heterointerface of GaInAs/InP single quantum wells grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 57, 878 (1990)
Department of Solid State Physics, University of Lund, Box 118, S‐22100, Lund, Sweden;
182.
1990

Jönsson J.; Deppert K.; Jeppesen S.; Paulsson G.; Samuelson L.; Schmidt P.

Optical detection of growth oscillations in high vacuum metalorganic vapor phase epitaxy
Appl. Phys. Lett. 56, 2414 (1990)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
183.
1990

Liu Xiao; Pistol M.-E.; Samuelson L.; Schwetlick S.; Seifert W.

Nitrogen pair luminescence in GaAs
Appl. Phys. Lett. 56, 1451 (1990)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
184.
1990

Seifert W.; Fornell J.-O.; Ledebo L.; Pistol M.-E.; Samuelson L.

Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 56, 1128 (1990)
Epiquip AB, S‐223 70 Lund, Sweden;
185.
1989

Montelius L.; Nilsson S.; Samuelson L.

Hole ionization of Mn‐doped GaAs; Photoluminescence versus space‐charge techniques
Phys. Rev. B 40, 5598 (1989)
Department of Solid State Physics, University of Lund, Box 118, S‐221∥00 Lund, Sweden;
186.
1989

Carlsson Per; Holmström Bertil; Samuelson Lars

Photocorrosion and Film Formation of Ga(;As,P); Electrodes
J. Electrochem. Soc. 136, 2266 (1989)
Department of Physical Chemistry, Chalmers/University of Göteborg, S‐412 96 Göteborg, Sweden;
187.
1989

Pistol M.-E.; Leys M. R.; Samuelson L.; Gerling M.; Gustafsson A.

Use of luminescence for the evaluation of stoichiometry in epitaxial growth
Appl. Phys. Lett. 55, 73 (1989)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
188.
1989

Silverberg P.; Omling P.; Samuelson L.

The hole photoionization cross section of EL2 in GaAs1-;xPx
J. Appl. Phys. 65, 3721 (1989)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
189.
1988

Pistol M.-E.; Paulsson G.; Samuelson L.; Rask M.; Landgren G.

Optical investigations on indirect‐band‐gap Al;xGa1-;xAs/AlyGa1-;yAs superlattices
Phys. Rev. B 38, 13222 (1988)
Department of Solid State Physics, University of Lund, P.O. Box 118, S‐221∥00 Lund, Sweden;
190.
1988

Pistol M.-E.; Nilsson S.; Samuelson L.

Effects of hydrostatic pressure and phosphorus alloying on the Ag acceptor level in GaAs
Phys. Rev. B 38, 8293 (1988)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
191.
1988

Omling P.; Silverberg P.; Samuelson L.

Identification of a second energy level of EL2 in n‐type GaAs
Phys. Rev. B 38, 3606 (1988)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
192.
1988

Montelius L.; Nilsson S.; Samuelson L.; Janzén E.; Ahlström M.

Characterization of the Mn acceptor level in GaAs
J. Appl. Phys. 64, 1564 (1988)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
193.
1988

Silverberg P.; Omling P.; Samuelson L.

Hole photoionization cross sections of EL2 in GaAs
Appl. Phys. Lett. 52, 1689 (1988)
Department of Solid State Physics, University of Lund, Box 118, S‐221 00 Lund, Sweden;
194.
1988

Pistol M.-E.; Leys M. R.; Samuelson L.

Properties of thin strained Ga(As,P) layers
Phys. Rev. B 37, 4664 (1988)
Department of Solid State Physics, University of Lund, P.O. Box 118, S‐221∥00 Lund, Sweden;
195.
1988

Carlsson Per; Holmström Bertil; Samuelson Lars

Stability towards photoelectrochemical etching in Ga(As, P) alloys
J. Appl. Phys. 63, 530 (1988)
Department of Physical Chemistry, University of Göteborg and Chalmers University of Technology, S–412 96 Göteborg, Sweden;
196.
1986

Samuelson L.; Omling P.

Properties of the EL2 level in GaAs1-;xPx
Phys. Rev. B 34, 5603 (1986)
Department of Solid State Physics, University of Lund, Box 118, S‐221☒ Lund, Sweden;
197.
1986

Samuelson L.; Pistol M. -E.; Nilsson S.

Mechanism for spatial separation of charge carriers in inhomogeneous semiconductor alloys
Phys. Rev. B 33, 8776 (1986)
Department of Solid State Physics, University of Lund, P.O. Box 118, S‐221☒ Lund, Sweden;
198.
1986

Omling P.; Weber E. R.; Samuelson L.

Antisite‐related defects in plastically deformed GaAs
Phys. Rev. B 33, 5880 (1986)
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
199.
1985

Oueslati M.; Zouaghi M.; Pistol M. E.; Samuelson L.; Grimmeiss H. G.; Balkanski M.

Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band‐gap GaAs;1-;xPx
Phys. Rev. B 32, 8220 (1985)
Laboratoire de Spectroscopie Moléculaire, Departement de Physique, Faculté des Sciences de Tunis, Tunis, Tunisia;
200.
1985

Huang Qisheng; Grimmeiss H. G.; Samuelson L.

Configuration coordinate diagram for the E4 defect in electron‐irradiated GaP
J. Appl. Phys. 58, 3068 (1985)
Department of Solid State Physics, University of Lund, Box 118, S‐220 07 Lund, Sweden;
201.
1985

Samuelson L.; Nilsson S.; Wang Z.-G.; Grimmeiss H. G.

Samuelson et al. respond
Phys. Rev. Lett. 54, 850 (1985)
Department of Solid State Physics, University of Lund, P.O. Box 118, S‐221 10 Lund, Sweden;
202.
1984

Samuelson L.; Nilsson S.; Wang Z.-G.; Grimmeiss H. G.

Direct evidence for random‐alloy splitting of Cu levels in GaAs;1-;xPx
Phys. Rev. Lett. 53, 1501 (1984)
Department of Solid State Physics, University of Lund, S‐22007 Lund, Sweden;
203.
1984

Samuelson L.; Omling P.; Grimmeiss H. G.

Evidence that the 0.635‐eV luminescence band in semi‐insulating GaAs is not EL2 related
Appl. Phys. Lett. 45, 521 (1984)
Department of Solid State Physics, University of Lund, Box 725, S‐220 07 Lund, Sweden;
204.
1984

Omling P.; Samuelson L.; Grimmeiss H. G.

Metastable state of EL2 in the GaAs1-;xPx alloy system
Phys. Rev. B 29, 4534 (1984)
Department of Solid State Physics, University of Lund, Box 725, S‐22007 Lun d 7, Sweden;
205.
1983

Omling P.; Samuelson L.; Grimmeiss H. G.

Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys
J. Appl. Phys. 54, 5117 (1983)
Department of Solid State Physics, University of Lund, Box 725, S‐220 07 Lund, Sweden;

Co-authors

Co-publications
64

Seifert, Werner
58

Pistol, M.-E.
27

Omling, P
23

Carlsson, Niclas
22

Gustafsson, Anders
19

Deppert, Knut
19

Montelius, Lars
19

Wernersson, L.-E.
16

Hessman, Dan
15

Pettersson, Håkan
14

Pryor, Craig E.
13

Maximov, Ivan
13

Xu, HQ
11

Zwiller, Valéry
10

Thelander, Claes