Padilla Alvaro; Burr Geoffrey W.; Rettner Charles T.; Topuria Teya; Rice Philip M.; Jackson Bryan; Virwani Kumar; Kellock Andrew J.; Dupouy Diego; Debunne Anthony; Shelby Robert M.; Gopalakrishnan Kailash; Shenoy Rohit S.; Kurdi Bülent N.
Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
J. Appl. Phys. 110, 054501 (2011)
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