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Petroff, Pierre M.

Computed

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Research Profile

Latest Publications

1.
2011

Gerardot B. D.; Barbour R. J.; Brunner D.; Dalgarno P. A.; Badolato A.; Stoltz N.; Petroff P. M.; Houel J.; Warburton R. J.

Laser spectroscopy of individual quantum dots charged with a single hole
Appl. Phys. Lett. 99, 243112 (2011)
SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
2.
2011

Thon S. M.; Kim H.; Bonato C.; Gudat J.; Hagemeier J.; Petroff P. M.; Bouwmeester D.

Independent electrical tuning of separated quantum dots in coupled photonic crystal cavities
Appl. Phys. Lett. 99, 161102 (2011)
Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
3.
2011

Barbour Russell J.; Dalgarno Paul A.; Curran Arran; Nowak Kris M.; Baker Howard J.; Hall Denis R.; Stoltz Nick G.; Petroff Pierre M.; Warburton Richard J.

A tunable microcavity
J. Appl. Phys. 110, 053107 (2011)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom

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All Publications

1.
2011

Gerardot B. D.; Barbour R. J.; Brunner D.; Dalgarno P. A.; Badolato A.; Stoltz N.; Petroff P. M.; Houel J.; Warburton R. J.

Laser spectroscopy of individual quantum dots charged with a single hole
Appl. Phys. Lett. 99, 243112 (2011)
SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
2.
2011

Thon S. M.; Kim H.; Bonato C.; Gudat J.; Hagemeier J.; Petroff P. M.; Bouwmeester D.

Independent electrical tuning of separated quantum dots in coupled photonic crystal cavities
Appl. Phys. Lett. 99, 161102 (2011)
Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
3.
2011

Barbour Russell J.; Dalgarno Paul A.; Curran Arran; Nowak Kris M.; Baker Howard J.; Hall Denis R.; Stoltz Nick G.; Petroff Pierre M.; Warburton Richard J.

A tunable microcavity
J. Appl. Phys. 110, 053107 (2011)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
4.
2011

Benny Y.; Kodriano Y.; Poem E.; Khatsevitch S.; Gershoni D.; Petroff P. M.

Two-photon photoluminescence excitation spectroscopy of single quantum dots
Phys. Rev. B 84, 075473 (2011)
Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel
5.
2011

van der Sar T.; Hagemeier J.; Pfaff W.; Heeres E. C.; Thon S. M.; Kim H.; Petroff P. M.; Oosterkamp T. H.; Bouwmeester D.; Hanson R.

Deterministic nanoassembly of a coupled quantum emitter–photonic crystal cavity system
Appl. Phys. Lett. 98, 193103 (2011)
Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
6.
2011

Gudat Jan; Bonato Cristian; van Nieuwenburg Evert; Thon Susanna; Kim Hyochul; Petroff Pierre M.; van Exter Martin P.; Bouwmeester Dirk

Permanent tuning of quantum dot transitions to degenerate microcavity resonances
Appl. Phys. Lett. 98, 121111 (2011)
Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands
7.
2011

Kloeffel C.; Dalgarno P. A.; Urbaszek B.; Gerardot B. D.; Brunner D.; Petroff P. M.; Loss D.; Warburton R. J.

Controlling the Interaction of Electron and Nuclear Spins in a Tunnel-Coupled Quantum Dot
Phys. Rev. Lett. 106, 046802 (2011)
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
8.
2011

Benny Y.; Khatsevich S.; Kodriano Y.; Poem E.; Presman R.; Galushko D.; Petroff P. M.; Gershoni D.

Coherent Optical Writing and Reading of the Exciton Spin State in Single Quantum Dots
Phys. Rev. Lett. 106, 040504 (2011)
The Physics Department, Technion—Israel Institute of Technology, Haifa, 32000, Israel
9.
2011

Völk S.; Knall F.; Schülein F. J. R.; Truong T. A.; Kim H.; Petroff P. M.; Wixforth A.; Krenner H. J.

Direct observation of dynamic surface acoustic wave controlled carrier injection into single quantum posts using phase-resolved optical spectroscopy
Appl. Phys. Lett. 98, 023109 (2011)
Lehrstuhl für Experimentalphysik 1 and Augsburg Centre for Innovative Technologies (ACIT), Universität Augsburg, 86159 Augsburg, Germany
10.
2010

Kodriano Y.; Poem E.; Lindner N. H.; Tradonsky C.; Gerardot B. D.; Petroff P. M.; Avron J. E.; Gershoni D.

Radiative cascade from quantum dot metastable spin-blockaded biexciton
Phys. Rev. B 82, 155329 (2010)
Department of Physics, The Technion-Israel Institute of Technology, Haifa 32000, Israel
11.
2010

Majumdar Arka; Faraon Andrei; Kim Erik D.; Englund Dirk; Kim Hyochul; Petroff Pierre; Vučković Jelena

Linewidth broadening of a quantum dot coupled to an off-resonant cavity
Phys. Rev. B 82, 045306 (2010)
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
12.
2010

Englund Dirk; Majumdar Arka; Faraon Andrei; Toishi Mitsuru; Stoltz Nick; Petroff Pierre; Vučković Jelena

Resonant Excitation of a Quantum Dot Strongly Coupled to a Photonic Crystal Nanocavity
Phys. Rev. Lett. 104, 073904 (2010)
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
13.
2010

Poem E.; Kodriano Y.; Tradonsky C.; Gerardot B. D.; Petroff P. M.; Gershoni D.

Radiative cascades from charged semiconductor quantum dots
Phys. Rev. B 81, 085306 (2010)
Department of Physics, The Technion–Israel Institute of Technology, Haifa 32000, Israel
14.
2010

Faraon Andrei; Majumdar Arka; Kim Hyochul; Petroff Pierre; Vučković Jelena

Fast Electrical Control of a Quantum Dot Strongly Coupled to a Photonic-Crystal Cavity
Phys. Rev. Lett. 104, 047402 (2010)
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
15.
2009

Stehr D.; Morris C. M.; Talbayev D.; Wagner M.; Kim H. C.; Taylor A. J.; Schneider H.; Petroff P. M.; Sherwin M. S.

Ultrafast carrier capture in InGaAs quantum posts
Appl. Phys. Lett. 95, 251105 (2009)
Center for Integrated Nanotechnologies, MS K771, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
16.
2009

Bonato Cristian; Ding Dapeng; Gudat Jan; Thon Susanna; Kim Hyochul; Petroff Pierre M.; van Exter Martin P.; Bouwmeester Dirk

Tuning micropillar cavity birefringence by laser induced surface defects
Appl. Phys. Lett. 95, 251104 (2009)
Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands
17.
2009

Kim Hyochul; Thon Susanna M.; Petroff Pierre M.; Bouwmeester Dirk

Independent tuning of quantum dots in a photonic crystal cavity
Appl. Phys. Lett. 95, 243107 (2009)
Department of Physics, University of California–Santa Barbara, Santa Barbara, California 93106, USA
18.
2009

Kim Hyochul; Rakher Matthew T.; Bouwmeester Dirk; Petroff Pierre M.

Electrically pumped quantum post vertical cavity surface emitting lasers
Appl. Phys. Lett. 94, 131104 (2009)
Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
19.
2009

Thon Susanna M.; Rakher Matthew T.; Kim Hyochul; Gudat Jan; Irvine William T. M.; Petroff Pierre M.; Bouwmeester Dirk

Strong coupling through optical positioning of a quantum dot in a photonic crystal cavity
Appl. Phys. Lett. 94, 111115 (2009)
Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
20.
2009

Rakher M. T.; Stoltz N. G.; Coldren L. A.; Petroff P. M.; Bouwmeester D.

Externally Mode-Matched Cavity Quantum Electrodynamics with Charge-Tunable Quantum Dots
Phys. Rev. Lett. 102, 097403 (2009)
Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
21.
2009

McFarlane J.; Dalgarno P. A.; Gerardot B. D.; Hadfield R. H.; Warburton R. J.; Karrai K.; Badolato A.; Petroff P. M.

Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot
Appl. Phys. Lett. 94, 093113 (2009)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
22.
2009

Truong T. A.; Campos L. M.; Matioli E.; Meinel I.; Hawker C. J.; Weisbuch C.; Petroff P. M.

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
Appl. Phys. Lett. 94, 023101 (2009)
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
23.
2008

Yamanaka Takayuki; Alexson Dimitri; Stroscio Michael A.; Dutta Mitra; Petroff Pierre; Brown Jay; Speck James

Phonon modes in self-assembled GaN quantum dots
J. Appl. Phys. 104, 093512 (2008)
Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA
24.
2008

Rakher M. T.; Stoltz N. G.; Coldren L. A.; Petroff P. M.; Bouwmeester D.

Polarization-switchable single photon source using the Stark effect
Appl. Phys. Lett. 93, 091118 (2008)
Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
25.
2008

Kroner M.; Weiss K. M.; Warburton R. J.; Öhberg P.; Petroff P. M.; Badolato A.; Holleitner A. W.; Seidl S.; Biedermann B.; Karrai K.

Resonant two-color high-resolution spectroscopy of a negatively charged exciton in a self-assembled quantum dot
Phys. Rev. B 78, 075429 (2008)
Center for NanoScience and Fakultät für Physik, Ludwig Maximilians Universität, 80539 München, Germany;
26.
2008

Moskalenko E. S.; Larsson L. A.; Larsson M.; Holtz P. O.; Schoenfeld W. V.; Petroff P. M.

Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field
Phys. Rev. B 78, 075306 (2008)
IFM Material Physics, Linköping University, S-581 83 Linköping, Sweden;
27.
2008

Faraon Andrei; Fushman Ilya; Englund Dirk; Stoltz Nick; Petroff Pierre; Vuckovic Jelena

Dipole induced transparency in waveguide coupled photonic crystal cavities
Opt. Express 16, 12154 (2008)
28.
2008

Dalgarno Paul A.; Smith Jason M.; McFarlane Jamie; Gerardot Brian D.; Karrai Kahled; Badolato Antonio; Petroff Pierre M.; Warburton Richard J.

Coulomb interactions in single charged self-assembled quantum dots: Radiative lifetime and recombination energy
Phys. Rev. B 77, 245311 (2008)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
29.
2008

Dalgarno P. A.; McFarlane J.; Brunner D.; Lambert R. W.; Gerardot B. D.; Warburton R. J.; Karrai K.; Badolato A.; Petroff P. M.

Hole recapture limited single photon generation from a single n-type charge-tunable quantum dot
Appl. Phys. Lett. 92, 193103 (2008)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
30.
2008

Dalgarno P. A.; Govorov A. O.; Petroff P. M.; Karrai K.; Kroner M.; Seidl S.; Smith J. M.; Gerardot B. D.; Ediger M.; Warburton R. J.

Optically Induced Hybridization of a Quantum Dot State with a Filled Continuum
Phys. Rev. Lett. 100, 176801 (2008)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
31.
2008

Kroner Martin; Weiss Kathrina M.; Biedermann Benjamin; Seidl Stefan; Manus Stephan; Holleitner Alexander W.; Badolato Antonio; Petroff Pierre M.; Gerardot Brian D.; Warburton Richard J.; Karrai Khaled

Optical Detection of Single-Electron Spin Resonance in a Quantum Dot
Phys. Rev. Lett. 100, 156803 (2008)
Center for NanoScience and Fakultät für Physik, Ludwig-Maximilians-Universität, 80539 München, Germany;
32.
2008

Seidl S.; Kroner M.; Lux C.; Holleitner A. W.; Karrai K.; Warburton R. J.; Badolato A.; Petroff P. M.

Resonant transmission spectroscopy on the p to p transitions of a charge tunable InGaAs quantum dot
Appl. Phys. Lett. 92, 153103 (2008)
Center for NanoScience and Fakultät für Physik, Ludwig-Maximilians-Universität, 80539 München, ;Germany
33.
2008

Faraon Andrei; Englund Dirk; Bulla Douglas; Luther-Davies Barry; Eggleton Benjamin J.; Stoltz Nick; Petroff Pierre; Vučković Jelena

Local tuning of photonic crystal cavities using chalcogenide glasses
Appl. Phys. Lett. 92, 043123 (2008)
Department of Applied Physics, Stanford University, Stanford, California 94305, USA
34.
2008

Kroner M.; Lux C.; Seidl S.; Holleitner A. W.; Karrai K.; Badolato A.; Petroff P. M.; Warburton R. J.

Rabi splitting and ac-Stark shift of a charged exciton
Appl. Phys. Lett. 92, 031108 (2008)
Center for NanoScience and Fakutät für Physik, Ludwig-Maximilians-Universität, 80539 München, ;Germany
35.
2007

Poem E.; Shemesh J.; Marderfeld I.; Galushko D.; Akopian N.; Gershoni D.; Gerardot B. D.; Badolato A.; Petroff P. M.

Polarization sensitive spectroscopy of charged quantum dots
Phys. Rev. B 76, 235304 (2007)
Department of Physics, The Technion-Israel Institute of Technology, Haifa 32000, Israel
36.
2007

Choi Y.-S.; Bouwmeester D.; Strauf S.; Badolato A.; Petroff P. M.; Rakher M. T.; Hennessy K.; Hu E. L.

Evolution of the onset of coherence in a family of photonic crystal nanolasers
Appl. Phys. Lett. 91, 031108 (2007)
University of California, Santa Barbara, California 93106
37.
2007

Shea Patrick B.; Chen Charlene; Kanicki Jerzy; Pattison Lisa R.; Petroff Pierre; Yamada Hiroko; Ono Noboru

Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channels
Appl. Phys. Lett. 90, 233107 (2007)
Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109
38.
2007

Gerardot B. D.; Seidl S.; Dalgarno P. A.; Warburton R. J.; Kroner M.; Karrai K.; Badolato A.; Petroff P. M.

Contrast in transmission spectroscopy of a single quantum dot
Appl. Phys. Lett. 90, 221106 (2007)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
39.
2007

Faraon Andrei; Englund Dirk; Fushman Ilya; Vučković Jelena; Stoltz Nick; Petroff Pierre

Local quantum dot tuning on photonic crystal chips
Appl. Phys. Lett. 90, 213110 (2007)
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305
40.
2007

Akopian N.; Lindner N. H.; Poem E.; Berlatzky Y.; Avron J.; Gershoni D.; Gerardot B. D.; Petroff P. M.

Correlated and entangled pairs of single photons from semiconductor quantum dots
J. Appl. Phys. 101, 081712 (2007)
Department of Physics, Technion—Israel Institute of Technology, Haifa 32000, Israel;
41.
2007

Dalgarno Paul A.; Gillies Patrick; McFarlane Jamie; Gerardot Brian D.; Karrai Khaled; Petroff Pierre M.; Galbraith Ian; Warburton Richard J.

The Radiative Lifetime of Charged Excitons in a Single Self‐Assembled Quantum Dot
AIP Conf. Proc. 893, 1091 (2007)
School of Engineering and Physical Sciences, Heriot‐Watt University, Edinburgh, EH14 4AS, UK;
42.
2007

Fushman Ilya; Waks Edo; Englund Dirk; Stoltz Nick; Petroff Pierre; Vučković Jelena

Ultrafast nonlinear optical tuning of photonic crystal cavities
Appl. Phys. Lett. 90, 091118 (2007)
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305
43.
2007

Gerardot B. D.; Seidl S.; Dalgarno P. A.; Warburton R. J.; Granados D.; Garcia J. M.; Kowalik K.; Krebs O.; Karrai K.; Badolato A.; Petroff P. M.

Manipulating exciton fine structure in quantum dots with a lateral electric field
Appl. Phys. Lett. 90, 041101 (2007)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
44.
2007

Ediger M.; Zunger A.; Karrai K.; Petroff P. M.; Badolato A.; Gerardot B. D.; Bester G.; Warburton R. J.

Fine Structure of Negatively and Positively Charged Excitons in Semiconductor Quantum Dots: Electron-Hole Asymmetry
Phys. Rev. Lett. 98, 036808 (2007)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
45.
2006

Larsson M.; Moskalenko E. S.; Larsson L. A.; Holtz P. O.; Verdozzi C.; Almbladh C.-O.; Schoenfeld W. V.; Petroff P. M.

Magnetic field effects on optical and transport properties in InAs/;GaAs quantum dots
Phys. Rev. B 74, 245312 (2006)
Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden;
46.
2006

Alén Benito; Högele Alexander; Kroner Martin; Seidl Stefan; Karrai Khaled; Warburton Richard J.; Badolato Antonio; Medeiros-Ribeiro Gilberto; Petroff Pierre M.

Absorptive and dispersive optical responses of excitons in a single quantum dot
Appl. Phys. Lett. 89, 123124 (2006)
Center for NanoScience, Department für Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany;
47.
2006

Shea Patrick B.; Kanicki Jerzy; Pattison Lisa R.; Petroff Pierre; Kawano Manami; Yamada Hiroko; Ono Noboru

Solution-processed nickel tetrabenzoporphyrin thin-film transistors
J. Appl. Phys. 100, 034502 (2006)
Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109
48.
2006

Dalgarno P. A.; McFarlane J.; Gerardot B. D.; Warburton R. J.; Karrai K.; Badolato A.; Petroff P. M.

Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot
Appl. Phys. Lett. 89, 043107 (2006)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
49.
2006

Ramon G.; Mizrahi U.; Akopian N.; Braitbart S.; Gershoni D.; Reinecke T. L.; Gerardot B. D.; Petroff P. M.

Emission characteristics of quantum dots in planar microcavities
Phys. Rev. B 73, 205330 (2006)
Naval Research Laboratory, Washington, DC 20375-5320, USA
50.
2006

Seidl Stefan; Kroner Martin; Högele Alexander; Karrai Khaled; Warburton Richard J.; Badolato Antonio; Petroff Pierre M.

Effect of uniaxial stress on excitons in a self-assembled quantum dot
Appl. Phys. Lett. 88, 203113 (2006)
Center for NanoScience, Department für Physik der LMU, Geschwister-Scholl-Platz 1, 80539 Munich, Germany;
51.
2006

Moskalenko E. S.; Larsson M.; Schoenfeld W. V.; Petroff P. M.; Holtz P. O.

Carrier transport in self-organized InAs/;GaAs quantum-dot structures studied by single-dot spectroscopy
Phys. Rev. B 73, 155336 (2006)
IFM Material Physics, Linköping University, S-581 83 Linköping, Sweden;
52.
2006

Akopian N.; Lindner N. H.; Poem E.; Berlatzky Y.; Avron J.; Gershoni D.; Gerardot B. D.; Petroff P. M.

Entangled Photon Pairs from Semiconductor Quantum Dots
Phys. Rev. Lett. 96, 130501 (2006)
Department of Physics, Technion—Israel Institute of Technology, Haifa 32000, Israel;
53.
2006

Strauf S.; Petroff P. M.; Hu E. L.; Andreani L. C.; Badolato A.; Choi Y.-S.; Rakher M. T.; Hennessy K.; Bouwmeester D.

Self-Tuned Quantum Dot Gain in Photonic Crystal Lasers
Phys. Rev. Lett. 96, 127404 (2006)
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
54.
2006

Strauf S.; Rakher M. T.; Carmeli I.; Hennessy K.; Meier C.; Badolato A.; DeDood M. J. A.; Petroff P. M.; Hu E. L.; Gwinn E. G.; Bouwmeester D.

Frequency control of photonic crystal membrane resonators by monolayer deposition
Appl. Phys. Lett. 88, 043116 (2006)
University of California, Santa Barbara, Santa Barbara, California 93106
55.
2005

Seidl S.; Kroner M.; Dalgarno P. A.; Högele A.; Smith J. M.; Ediger M.; Gerardot B. D.; Karrai K.; Petroff P. M.; Garcia J. M.; Warburton R. J.

Absorption and photoluminescence spectroscopy on a single self-assembled charge-tunable quantum dot
Phys. Rev. B 72, 195339 (2005)
Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München, Germany;
56.
2005

Gill K. S.; Moskovitz N.; Wang L.-C.; Sherwin M. S.; Badolato A.; Gerardot B.; Petroff P.

Controllable charge storage in quantum dots with independent tuning of electric fields
Appl. Phys. Lett. 87, 162101 (2005)
Department of Physics, University of California, Santa Barbara, California 93106
57.
2005

Gerardot Brian D.; Strauf Stefan; Bouwmeester Dirk; Hu Evelyn L.; Hennessy Kevin; Badolato Antonio; Bychkov Andrey M.; de Dood Michiel J. A.; Petroff Pierre M.

Photon Statistics from Coupled Quantum Dots
Phys. Rev. Lett. 95, 137403 (2005)
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
58.
2005

Stoltz N. G.; Badolato A.; Lofgreen D. D.; Rakher M.; Coldren L. A.; Strauf S.; Petroff P. M.; Bouwmeester D.

High-quality factor optical microcavities using oxide apertured micropillars
Appl. Phys. Lett. 87, 031105 (2005)
University of California, Santa Barbara, California 93106
59.
2005

Hennessy K.; Badolato A.; Tamboli A.; Petroff P. M.; Hu E.; Atatüre M.; Dreiser J.; Imamoğlu A.

Tuning photonic crystal nanocavity modes by wet chemical digital etching
Appl. Phys. Lett. 87, 021108 (2005)
University of California, Santa Barbara, California 93106
60.
2005

Urbaszek B.; Warburton R. J.; McGhee E. J.; Ediger M.; Karrai K.; Schulhauser C.; Högele A.; Marie X.; Govorov A. O.; Gerardot B. D.; Petroff P. M.; Amand T.

Spin‐Dependent Coupling Of Charged Excitons In Quantum Dots With Continuum States
AIP Conf. Proc. 772, 751 (2005)
School of Engineering and Physical Sciences, Heriot‐Watt University, Edinburgh EH14 4AS, UK;
61.
2005

Ediger M.; Warburton R. J.; Karrai K.; Gerardot B. D.; Petroff P. M.

Forbidden Transitions in the Emission Spectrum of Charged Excitons in a Single Semiconductor Quantum Dot
AIP Conf. Proc. 772, 739 (2005)
School of Engineering and Physical Sciences, Heriot‐Watt University, Edinburgh EH14 4AS, UK;
62.
2005

Moskalenko E. S.; Karlsson K. F.; Donchev V.; Holtz P. O.; Monemar B.; Schoenfeld W. V.; Petroff P. M.

Exploitation of an Additional Infrared Laser to Modulate the Luminescence Intensity from InAs Quantum Dots
AIP Conf. Proc. 772, 705 (2005)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
63.
2005

Akopian N.; Vilan S.; Mizrahi U.; Regelman D. V.; Gershoni D.; Ehrenfreund E.; Shabaev A.; Efros Al. L.; Gerardot B.; Petroff P. M.

Polarization Correlations between Single Photons Emitted by Quantum Dots in Planar Microcavities
AIP Conf. Proc. 772, 669 (2005)
Physics Department, Technion, Haifa 32000, Israel
64.
2005

Ediger M.; Dalgarno P. A.; Smith J. M.; Warburton R. J.; Karrai K.; Gerardot B. D.; Petroff P. M.

Controlled Generation of Neutral, Negatively Charged and Positively Charged Excitons in the Same Single Quantum Dot
AIP Conf. Proc. 772, 667 (2005)
School of Engineering and Physical Sciences, Heriot‐Watt University, Edinburgh EH 14 4AS, UK;
65.
2005

Dalgarno Paul A.; Ediger Matthias; Smith Jason M.; Warburton Richard J.; Karrai Khaled; Govorov Alexander O.; Gerardot Brian D.; Petroff Pierre M.

Dynamics of Bright and Dark Excitons in a Self‐Assembled Quantum Dot
AIP Conf. Proc. 772, 645 (2005)
School of Engineering and Physical Sciences, Heriot‐Watt University, Edinburgh, EH14 4AS, UK;
66.
2005

Högele Alexander; Kroner Martin; Seidl Stefan; Karrai Khaled; Atatüre Mete; Dreiser Jan; Imamoğlu Atac; Warburton Richard J.; Badolato Antonio; Gerardot Brian D.; Petroff Pierre M.

Spin-selective optical absorption of singly charged excitons in a quantum dot
Appl. Phys. Lett. 86, 221905 (2005)
Center for NanoScience, Department für Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München, Germany;
67.
2005

Ediger M.; Dalgarno P. A.; Smith J. M.; Gerardot B. D.; Warburton R. J.; Karrai K.; Petroff P. M.

Controlled generation of neutral, negatively-charged and positively-charged excitons in the same single quantum dot
Appl. Phys. Lett. 86, 211909 (2005)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
68.
2005

Smith J. M.; Dalgarno P. A.; Warburton R. J.; Govorov A. O.; Karrai K.; Gerardot B. D.; Petroff P. M.

Voltage Control of the Spin Dynamics of an Exciton in a Semiconductor Quantum Dot
Phys. Rev. Lett. 94, 197402 (2005)
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
69.
2005

Favero I.; Cassabois G.; Jankovic A.; Ferreira R.; Darson D.; Voisin C.; Delalande C.; Roussignol Ph.; Badolato A.; Petroff P. M.; Gérard J. M.

Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble
Appl. Phys. Lett. 86, 041904 (2005)
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 5, France;
70.
2004

Högele Alexander; Seidl Stefan; Kroner Martin; Karrai Khaled; Warburton Richard J.; Gerardot Brian D.; Petroff Pierre M.

Voltage-Controlled Optics of a Quantum Dot
Phys. Rev. Lett. 93, 217401 (2004)
71.
2004

Wang C. F.; Badolato A.; Wilson-Rae I.; Petroff P. M.; Hu E.; Urayama J.; Imamoğlu A.

Optical properties of single InAs quantum dots in close proximity to surfaces
Appl. Phys. Lett. 85, 3423 (2004)
University of California, Santa Barbara, California 93106
72.
2004

Moskalenko E. S.; Karlsson K. F.; Donchev V.; Holtz P. O.; Monemar B.; Schoenfeld W. V.; Petroff P. M.

Effective optical manipulation of the charge state and emission intensity of the InAs/;GaAs quantum dots by means of additional infrared illumination
Appl. Phys. Lett. 85, 754 (2004)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping Sweden and A. F. Ioffe Physical-Technical Institute, RAS, 194021, Polytechnicheskaya 26, St. Petersburg, Russia;
73.
2004

Moskalenko E. S.; Karlsson K. F.; Donchev V.; Holtz P. O.; Schoenfeld W. V.; Petroff P. M.

The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
Appl. Phys. Lett. 84, 4896 (2004)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
74.
2004

Lee Seung-Heon; Diana Frédéric S.; Badolato Antonio; Petroff Pierre M.; Kramer Edward J.

Self-assembling nanoparticles into holographic nanopatterns
J. Appl. Phys. 95, 5922 (2004)
Materials Department and Mitsubishi Chemical—Center for Advanced Materials, University of California, Santa Barbara, California 93106;
75.
2004

Brown J.; Wu F.; Petroff P. M.; Speck J. S.

GaN quantum dot density control by rf-plasma molecular beam epitaxy
Appl. Phys. Lett. 84, 690 (2004)
Materials Department, University of California, Santa Barbara, CA 93106-5050;
76.
2004

Urbaszek B.; McGhee E. J.; Krüger M.; Warburton R. J.; Karrai K.; Amand T.; Gerardot B. D.; Petroff P. M.; Garcia J. M.

Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
Phys. Rev. B 69, 035304 (2004)
School of Engineering and Physical Sciences, Heriot Watt University, Edinburgh EH14 4AS, United Kingdom;
77.
2003

Hennessy K.; Reese C.; Badolato A.; Wang C. F.; Imamoǧlu A.; Petroff P. M.; Hu E.; Jin G.; Shi S.; Prather D. W.

Square-lattice photonic crystal microcavities for coupling to single InAs quantum dots
Appl. Phys. Lett. 83, 3650 (2003)
University of California, Santa Barbara, California 93106;
78.
2003

Hennessy K.; Reese C.; Badolato A.; Wang C. F.; Imamoǧlu A.; Petroff P. M.; Hu E.

Fabrication of high Q square-lattice photonic crystal microcavities
J. Vac. Sci. Technol. B 21, 2918 (2003)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
79.
2003

Moskalenko E. S.; Donchev V.; Karlsson K. F.; Holtz P. O.; Monemar B.; Schoenfeld W. V.; Garcia J. M.; Petroff P. M.

Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
Phys. Rev. B 68, 155317 (2003)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
80.
2003

Alén Benito; Bickel Florian; Karrai Khaled; Warburton Richard J.; Petroff Pierre M.

Stark-shift modulation absorption spectroscopy of single quantum dots
Appl. Phys. Lett. 83, 2235 (2003)
Center for NanoScience, Ludwig-Maximilians Universität, Geschwister-Scholl-Platz 1, 80539, München, Germany;
81.
2003

Epstein R. J.; Stephens J.; Hanson M.; Chye Y.; Gossard A. C.; Petroff P. M.; Awschalom D. D.

Voltage control of nuclear spin in ferromagnetic Schottky diodes
Phys. Rev. B 68, 041305 (2003)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA;
82.
2003

Urbaszek B.; Warburton R. J.; Karrai K.; Gerardot B. D.; Petroff P. M.; Garcia J. M.

Fine Structure of Highly Charged Excitons in Semiconductor Quantum Dots
Phys. Rev. Lett. 90, 247403 (2003)
83.
2003

Smith J. M.; Dalgarno P. A.; Urbaszek B.; McGhee E. J.; Buller G. S.; Nott G. J.; Warburton R. J.; Garcia J. M.; Schoenfeld W.; Petroff P. M.

Carrier storage and capture dynamics in quantum-dot heterostructures
Appl. Phys. Lett. 82, 3761 (2003)
School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom;
84.
2002

Moskalenko E. S.; Karlsson K. F.; Holtz P. O.; Monemar B.; Schoenfeld W. V.; Garcia J. M.; Petroff P. M.

Formation of the charged exciton complexes in self-assembled InAs single quantum dots
J. Appl. Phys. 92, 6787 (2002)
A.F. Ioffe Physical-Technical Institute, RAS, 194021, Polytechnicheskaya 26, St. Petersburg, Russia and Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
85.
2002

Chye Y.; White M. E.; Johnston-Halperin E.; Gerardot B. D.; Awschalom D. D.; Petroff P. M.

Spin injection from (Ga,Mn)As into InAs quantum dots
Phys. Rev. B 66, 201301 (2002)
Center for Spintronics and Quantum Computation University of California, Santa Barbara, California 93106;
86.
2002

Moskalenko E. S.; Karlsson K. F.; Holtz P. O.; Monemar B.; Schoenfeld W. V.; Garcia J. M.; Petroff P. M.

Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
Phys. Rev. B 66, 195332 (2002)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
87.
2002

Schulhauser C.; Garcia J. M.; Schoenfeld W.; Chaplik A.; Kalameitsev A. V.; Govorov A. O.; Karrai K.; Warburton R. J.; Haft D.; Petroff P. M.

Magneto-optical properties of charged excitons in quantum dots
Phys. Rev. B 66, 193303 (2002)
Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany;
88.
2002

Kiraz A.; Hu E.; Zhang Lidong; Petroff P. M.; Schoenfeld W. V.; Gayral B.; Becher C.; Fälth S.; Imamoğlu A.

Photon correlation spectroscopy of a single quantum dot
Phys. Rev. B 65, 161303 (2002)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
89.
2002

Epstein R. J.; Gossard A. C.; Petroff P. M.; Hanson M.; Chye Y.; Kawakami R. K.; Malajovich I.; Awschalom D. D.

Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization
Phys. Rev. B 65, 121202 (2002)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106;
90.
2002

Warburton R. J.; Schoenfeld W.; Garcia J. M.; Karrai K.; Schäflein C.; Haft D.; Schulhauser C.; Petroff P. M.

Giant permanent dipole moments of excitons in semiconductor nanostructures
Phys. Rev. B 65, 113303 (2002)
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
91.
2002

Shtrichman I.; Metzner C.; Gerardot B. D.; Schoenfeld W. V.; Petroff P. M.

Photoluminescence of a single InAs quantum dot molecule under applied electric field
Phys. Rev. B 65, 081303 (2002)
Materials Department, University of California, Santa Barbara, California 93106;
92.
2002

Chye Y.; Huard V.; White M. E.; Petroff P. M.

Properties of a Fe/GaAs(001) hybrid structure grown by molecular-beam epitaxy
Appl. Phys. Lett. 80, 449 (2002)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106;
93.
2001

Regelman D. V.; Mizrahi U.; Gershoni D.; Ehrenfreund E.; Schoenfeld W. V.; Petroff P. M.

Semiconductor Quantum Dot: A Quantum Light Source of Multicolor Photons with Tunable Statistics
Phys. Rev. Lett. 87, 257401 (2001)
Solid State Institute and Physics Department, Technion–Israel Institute of Technology, Haifa 32000, Israel;
94.
2001

Elsass Christopher R.; Poblenz Christiane; Heying Ben; Fini Paul; Petroff Pierre M.; DenBaars Steven P.; Mishra Umesh K.; Speck James S.; Saxler Adam; Elhamrib Said; Mitchel William C.

Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma‐assisted Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 40, 6235 (2001)
Materials and Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
95.
2001

Reese C.; Gayral B.; Gerardot B. D.; Imamoǧlu A.; Petroff P. M.; Hu E.

High-Q photonic crystal microcavities fabricated in a thin GaAs membrane
J. Vac. Sci. Technol. B 19, 2749 (2001)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
96.
2001

Regelman D. V.; Dekel E.; Gershoni D.; Ehrenfreund E.; Williamson A. J.; Shumway J.; Zunger A.; Schoenfeld W. V.; Petroff P. M.

Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states
Phys. Rev. B 64, 165301 (2001)
Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel;
97.
2001

Moskalenko E. S.; Garcia J. M.; Schoenfeld W. V.; Monemar B.; Holtz P. O.; Karlsson K. F.; Petroff P. M.

Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots
Phys. Rev. B 64, 085302 (2001)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
98.
2001

Kiraz A.; Michler P.; Becher C.; Gayral B.; Imamoğlu A.; Zhang Lidong; Hu E.; Schoenfeld W. V.; Petroff P. M.

Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
Appl. Phys. Lett. 78, 3932 (2001)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
99.
2001

Schoenfeld W. V.; Metzner C.; Letts E.; Petroff P. M.

Spectroscopy of strain-induced quantum dots in GaAs/AlxGa1-x;As quantum well structures
Phys. Rev. B 63, 205319 (2001)
Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106;
100.
2001

Jaeger A.; Petroff P. M.; Lowes T. D.

Angle-dependent photocurrent spectroscopy of oxide-apertured vertical-cavity surface-emitting lasers during aging
Appl. Phys. Lett. 78, 3012 (2001)
Materials Department, University of California, Santa Barbara, California 93117;
101.
2001

Karlsson K. F.; Moskalenko E. S.; Holtz P. O.; Monemar B.; Schoenfeld W. V.; Garcia J. M.; Petroff P. M.

Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots
Appl. Phys. Lett. 78, 2952 (2001)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
102.
2001

Haft Dirk; Warburton Richard J.; Karrai Khaled; Huant Serge; Medeiros-Ribeiro Gilberto; Garcia Jorge M.; Schoenfeld Winston; Petroff Pierre M.

Luminescence quenching in InAs quantum dots
Appl. Phys. Lett. 78, 2946 (2001)
Center for NanoScience and Sektion Physik der LMU, Geschwister-Scholl-Platz 1, 80539, München, Germany;
103.
2001

Petroff Pierre M.; Lorke Axel; Imamoglu Atac

Epitaxially Self‐Assembled Quantum Dots
Phys. Today 54, 46 (2001)
Materials department, University of California, Santa Barbara
104.
2001

Reese C.; Becher C.; Imamoğlu A.; Hu E.; Gerardot B. D.; Petroff P. M.

Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters
Appl. Phys. Lett. 78, 2279 (2001)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
105.
2001

Romanov A. E.; Beltz G. E.; Fischer W. T.; Petroff P. M.; Speck J. S.

Elastic fields of quantum dots in subsurface layers
J. Appl. Phys. 89, 4523 (2001)
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
106.
2001

Paskov Plamen P.; Holtz Per-Olof; Monemar Bo; Garcia Jorge M.; Schoenfeld Winston V.; Petroff Pierre M.

Optical Up-Conversion Processes in InAs Quantum Dots
Jpn. J. Appl. Phys., Part 1 40, 2080 (2001)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
107.
2001

Paskov Plamen P.; Holtz Per-Olof; Monemar Bo; Garcia Jorge M.; Schoenfeld Winston V.; Petroff Pierre M.

Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
Jpn. J. Appl. Phys., Part 1 40, 1998 (2001)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
108.
2001

Lorke Axel; Luyken R. Johannes; Garcia Jorge M.; Petroff Pierre M.

Growth and Electronic Properties of Self-Organized Quantum Rings
Jpn. J. Appl. Phys., Part 1 40, 1857 (2001)
Laboratorium für Festkörperphysik, Gerhard-Mercator-Universität, Lotharstr. 17-ME 245, 47048 Duisburg, Germany;
109.
2001

Becher C.; Zhang Lidong; Petroff P. M.; Schoenfeld W. V.; Imamoğlu A.; Michler P.; Kiraz A.; Hu E.

Nonclassical radiation from a single self-assembled InAs quantum dot
Phys. Rev. B 63, 121312 (2001)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
110.
2001

Epstein R. J.; Fuchs D. T.; Schoenfeld W. V.; Petroff P. M.; Awschalom D. D.

Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots
Appl. Phys. Lett. 78, 733 (2001)
Center for Spintronics and Quantum Computation, Department of Physics, University of California, Santa Barbara, California 93106;
111.
2001

Kegel I.; Metzger T. H.; Lorke A.; Peisl J.; Stangl J.; Bauer G.; Nordlund K.; Schoenfeld W. V.; Petroff P. M.

Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction
Phys. Rev. B 63, 035318 (2001)
CeNS at Sektion Physik, Ludwig-Maximilians-Universität München, D-80539 München, Germany;
112.
2001

Lee H.; Johnson J. A.; He M. Y.; Speck J. S.; Petroff P. M.

Strain-engineered self-assembled semiconductor quantum dot lattices
Appl. Phys. Lett. 78, 105 (2001)
Materials Department, University of California, Santa Barbara, California 93106;
113.
2000

Boucaud P.; Williams J. B.; Gill K. S.; Sherwin M. S.; Schoenfeld W. V.; Petroff P. M.

Terahertz-frequency electronic coupling in vertically coupled quantum dots
Appl. Phys. Lett. 77, 4356 (2000)
Quantum Institute, University of California, Santa Barbara, California 93106-9530;
114.
2000

Elhamri S.; Saxler A.; Mitchel W. C.; Elsass C. R.; Smorchkova I. P.; Heying B.; Haus E.; Fini P.; Ibbetson J. P.; Keller S.; Petroff P. M.; DenBaars S. P.; Mishra U. K.; Speck J. S.

Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
J. Appl. Phys. 88, 6583 (2000)
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433-7707;
115.
2000

Elsass C. R.; Mates T.; Heying B.; Poblenz C.; Fini P.; Petroff P. M.; DenBaars S. P.; Speck J. S.

Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
Appl. Phys. Lett. 77, 3167 (2000)
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106;
116.
2000

Elsass Christopher R.; Smorchkova Iolia P.; Heying Ben; Haus Erik; Poblenz Christiane; Fini Paul; Maranowski Kevin; Petroff Pierre M.; DenBaars Steven P.; Mishra Umesh K.; Speck James S.; Saxler Adam; Elhamri Said; Mitchel William C.

Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 2 39, L1023 (2000)
Materials and Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
117.
2000

Dekel E.; Schoenfeld W. V.; Ehrenfreund E.; Gershoni D.; Regelman D. V.; Petroff P. M.

Cascade evolution and radiative recombination of quantum dot multiexcitons studied by time-resolved spectroscopy
Phys. Rev. B 62, 11038 (2000)
Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel;
118.
2000

Paskov P. P.; Holtz P. O.; Monemar B.; Garcia J. M.; Schoenfeld W. V.; Petroff P. M.

Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Phys. Rev. B 62, 7344 (2000)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
119.
2000

Kegel I.; Metzger T. H.; Lorke A.; Peisl J.; Stangl J.; Bauer G.; Garcı´a J. M.; Petroff P. M.

Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/;GaAs Quantum Dots
Phys. Rev. Lett. 85, 1694 (2000)
CeNS at Sektion Physik, Ludwig-Maximilians-Universität, 80359 München, Germany;
120.
2000

Paskov P. P.; Holtz P. O.; Monemar B.; Garcia J. M.; Schoenfeld W. V.; Petroff P. M.

Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Appl. Phys. Lett. 77, 812 (2000)
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;
121.
2000

Boucaud P.; Gill K. S.; Williams J. B.; Sherwin M. S.; Schoenfeld W. V.; Petroff P. M.

Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules
Appl. Phys. Lett. 77, 510 (2000)
Quantum Institute, University of California, Santa Barbara, California 93106-9530;
122.
2000

Lee H.; Johnson J. A.; Speck J. S.; Petroff P. M.

Controlled ordering and positioning of InAs self-assembled quantum dots
J. Vac. Sci. Technol. B 18, 2193 (2000)
Materials Department, University of California, Santa Barbara, California 93106;
123.
2000

Ribeiro E.; Medeiros-Ribeiro G.; Ensslin K.; Heinzel T.; Brasil M. J. S. P.; Cerdeira F.; Petroff P. M.

An optical study of self-assembled InxGa1-x;As/GaAs quantum dots embedded in a two-dimensional electron gas
J. Appl. Phys. 87, 7994 (2000)
Instituto de Fı´sica “Gleb Wataghin,” Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970 Campinas-SP, Brazil;
124.
2000

Dekel E.; Garcia J. M.; Ehrenfreund E.; Gershoni D.; Petroff P. M.

Carrier-carrier correlations in an optically excited single semiconductor quantum dot
Phys. Rev. B 61, 11009 (2000)
Physics Department and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel;
125.
2000

Lorke Axel; Johannes Luyken R.; Govorov Alexander O.; Kotthaus Jörg P.; Garcia J. M.; Petroff P. M.

Spectroscopy of Nanoscopic Semiconductor Rings
Phys. Rev. Lett. 84, 2223 (2000)
Sektion Physik und CeNS, LMU München, Geschwister-Scholl-Platz 1, 80539 München, Germany;
126.
2000

Colombelli Raffaele; Piazza Vincenzo; Badolato Antonio; Lazzarino Marco; Beltram Fabio; Schoenfeld Winston; Petroff Pierre

Conduction-band offset of single InAs monolayers on GaAs
Appl. Phys. Lett. 76, 1146 (2000)
Scuola Normale Superiore and INFM, Piazza dei Cavalieri 7, I-56126 Pisa, Italy;
127.
2000

Saxler A.; Debray P.; Perrin R.; Elhamri S.; Mitchel W. C.; Elsass C. R.; Smorchkova I. P.; Heying B.; Haus E.; Fini P.; Ibbetson J. P.; Keller S.; Petroff P. M.; DenBaars S. P.; Mishra U. K.; Speck J. S.

Characterization of an AlGaN/GaN two-dimensional electron gas structure
J. Appl. Phys. 87, 369 (2000)
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson Air Force Base, Ohio 45433-7707;
128.
1999

Pelzel R. I.; Nosho B. Z.; Shoenfeld W. V.; Lundstrom T.; Petroff P. M.; Weinberg W. H.

Effect of initial surface reconstruction on the GaS/GaAs(001) interface
Appl. Phys. Lett. 75, 3354 (1999)
Department of Chemical Engineering, Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106;
129.
1999

Elsass C. R.; Smorchkova I. P.; Heying B.; Haus E.; Fini P.; Maranowski K.; Ibbetson J. P.; Keller S.; Petroff P. M.; DenBaars S. P.; Mishra U. K.; Speck J. S.

High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 74, 3528 (1999)
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106;
130.
1999

Luyken R. J.; Lorke A.; Govorov A. O.; Kotthaus J. P.; Medeiros-Ribeiro G.; Petroff P. M.

The dynamics of tunneling into self-assembled InAs dots
Appl. Phys. Lett. 74, 2486 (1999)
Sektion Physik/CeNS, LMU München, Geschwister-Scholl Platz 1, 80539 München, Germany;
131.
1999

Romanov A. E.; Petroff P. M.; Speck J. S.

Lateral ordering of quantum dots by periodic subsurface stressors
Appl. Phys. Lett. 74, 2280 (1999)
Materials Department, University of California, Santa Barbara, California 93106;
132.
1999

Schoenfeld W. V.; Lundstrom T.; Petroff P. M.; Gershoni D.

Charge separation in coupled InAs quantum dots and strain-induced quantum dots
Appl. Phys. Lett. 74, 2194 (1999)
Materials Department, University of California, Santa Barbara, California 93106;
133.
1999

Horiguchi Naoto; Futatsugi Toshiro; Nakata Yoshiaki; Yokoyama Naoki; Mankad Tanaya; Petroff Pierre M.

Quantum dot infrared photodetector using modulation doped InAs self-assembled quantum dots
Jpn. J. Appl. Phys., Part 1 38, 2559 (1999)
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan;
134.
1999

Bödefeld M. C.; Warburton R. J.; Karrai K.; Kotthaus J. P.; Medeiros-Ribeiro G.; Petroff P. M.

Storage of electrons and holes in self-assembled InAs quantum dots
Appl. Phys. Lett. 74, 1839 (1999)
Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universität, 80539 München, Germany;
135.
1999

Tanaka Ichiro; Kamiya I.; Sakaki H.; Qureshi N.; Allen S. J.; Petroff P. M.

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip
Appl. Phys. Lett. 74, 844 (1999)
Quantum Transition Project, Japan Science and Technology Corporation, Park Building 4F, 4-7-6 Komaba, Meguro, Tokyo 153-0041, Japan;
136.
1999

Ribeiro E.; Jäggi R. D.; Heinzel T.; Ensslin K.; Medeiros-Ribeiro G.; Petroff P. M.

Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at Zero Magnetic Field
Phys. Rev. Lett. 82, 996 (1999)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
137.
1998

Warburton R. J.; Petroff P. M.; Medeiros-Ribeiro G.; Kotthaus J. P.; Karrai K.; Bödefeld C.; Dürr C. S.; Miller B. T.; Huant S.

Coulomb interactions in small charge-tunable quantum dots: A simple model
Phys. Rev. B 58, 16221 (1998)
Sektion Physik der Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany;
138.
1998

Wellmann P. J.; Garcia J. M.; Feng J.-L.; Petroff P. M.

Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure
Appl. Phys. Lett. 73, 3291 (1998)
Materials Department, University of California in Santa Barbara, Santa Barbara, California 93106;
139.
1998

Schoenfeld W. V.; Chen C.-H.; Petroff P. M.; Hu E. L.

Argon ion damage in self-assembled quantum dots structures
Appl. Phys. Lett. 73, 2935 (1998)
Materials Department, University of California, Santa Barbara, California 93106;
140.
1998

Chen Ching-Hui; Schoenfeld Winston V.; Hu Evelyn L.; Petroff Pierre M.

Metallization-induced damage in III–V semiconductors
J. Vac. Sci. Technol. B 16, 3354 (1998)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
141.
1998

Schmidt K. H.; Medeiros-Ribeiro G.; Kunze U.; Abstreiter G.; Hagn M.; Petroff P. M.

Size distribution of coherently strained InAs quantum dots
J. Appl. Phys. 84, 4268 (1998)
Werkstoffe der Elektrotechnik, Ruhr-Universität Bochum, D-44780 Bochum, Germany;
142.
1998

Maimon S.; Finkman E.; Bahir G.; Schacham S. E.; Garcia J. M.; Petroff P. M.

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
Appl. Phys. Lett. 73, 2003 (1998)
Department of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel;
143.
1998

Schmidt K. H.; Medeiros-Ribeiro G.; Petroff P. M.

Photoluminescence of charged InAs self-assembled quantum dots
Phys. Rev. B 58, 3597 (1998)
Lehrstuhl für Werkstoffe der Elektrotechnik, Ruhr-Universität Bochum, D-44780 Bochum, Germany;
144.
1998

Ribeiro E.; Müller E.; Heinzel T.; Auderset H.; Ensslin K.; Medeiros-Ribeiro G.; Petroff P. M.

InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
Phys. Rev. B 58, 1506 (1998)
Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland;
145.
1998

Garcı´a J. M.; Mankad T.; Holtz P. O.; Wellman P. J.; Petroff P. M.

Electronic states tuning of InAs self-assembled quantum dots
Appl. Phys. Lett. 72, 3172 (1998)
Department of Materials and QUEST, University of California, Santa Barbara, California 93106;
146.
1998

Dekel E.; Gershoni D.; Ehrenfreund E.; Spektor D.; Garcia J. M.; Petroff P. M.

Multiexciton Spectroscopy of a Single Self-Assembled Quantum Dot
Phys. Rev. Lett. 80, 4991 (1998)
147.
1998

Herrick Robert W.; Petroff Pierre M.

Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing
Appl. Phys. Lett. 72, 1799 (1998)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560;
148.
1998

Wu X. H.; Elsass C. R.; Abare A.; Mack M.; Keller S.; Petroff P. M.; DenBaars S. P.; Speck J. S.; Rosner S. J.

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
Appl. Phys. Lett. 72, 692 (1998)
College of Engineering, University of California, Santa Barbara, California 93106;
149.
1997

Warburton R. J.; Dürr C. S.; Karrai K.; Kotthaus J. P.; Medeiros-Ribeiro G.; Petroff P. M.

Charged Excitons in Self-Assembled Semiconductor Quantum Dots
Phys. Rev. Lett. 79, 5282 (1997)
150.
1997

Wellmann P. J.; Garcia J. M.; Feng J.-L.; Petroff P. M.

Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs
Appl. Phys. Lett. 71, 2532 (1997)
Materials Department, University of California in Santa Barbara, Santa Barbara, California 93106
151.
1997

Garcı´a J. M.; Medeiros-Ribeiro G.; Schmidt K.; Ngo T.; Feng J. L.; Lorke A.; Kotthaus J.; Petroff P. M.

Intermixing and shape changes during the formation of InAs self-assembled quantum dots
Appl. Phys. Lett. 71, 2014 (1997)
Materials Department and QUEST, University of California, Santa Barbara, California 93106
152.
1997

Feng J.; Huo Q.; Petroff P. M.; Stucky G. D.

Due to an error in printing, the following article, originally published in the 4 August 1997 issue, is being republished in its entirety. Morphology definition by disclinations and dislocations in a mesostructured silicate crystal
Appl. Phys. Lett. 71, 1887 (1997)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
153.
1997

Luo K.; Herrick R. W.; Majumdar A.; Petroff P.

Scanning thermal microscopy of a vertical-cavity surface-emitting laser
Appl. Phys. Lett. 71, 1604 (1997)
Anadigics Incorporated, Warren, New Jersey 07059
154.
1997

Miller B. T.; Hansen W.; Manus S.; Luyken R. J.; Lorke A.; Kotthaus J. P.; Huant S.; Medeiros-Ribeiro G.; Petroff P. M.

Few-electron ground states of charge-tunable self-assembled quantum dots
Phys. Rev. B 56, 6764 (1997)
Sektion Physik, LMU München, Geschwister-Scholl-Platz 1, 80539 München, Germany;
155.
1997

Medeiros-Ribeiro G.; Garcia J. M.; Petroff P. M.

Charging dynamics of InAs self-assembled quantum dots
Phys. Rev. B 56, 3609 (1997)
Center for Quantized Electronic Structures (QUEST) and Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106
156.
1997

Feng J.; Huo Q.; Petroff P. M.; Stucky G. D.

Morphology definition by disclinations and dislocations in a mesostructured silicate crystal
Appl. Phys. Lett. 71, 620 (1997)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
157.
1997

Knipp P. A.; Reinecke T. L.; Lorke A.; Fricke M.; Petroff P. M.

Coupling between LO phonons and electronic excitations of quantum dots
Phys. Rev. B 56, 1516 (1997)
Department of Physics and Computer Science, Christopher Newport University, Newport News, Virginia 23606
158.
1997

Petroff Pierre M.; Schmidt Klaus H.; Lorke Axel; Ribeiro Gilberto Medeiros; Kotthaus Jorg

Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots
Jpn. J. Appl. Phys., Part 1 36, 4068 (1997)
Materials Department, University of California, Santa Barbara, California 93106
159.
1997

Shi Jing; Petroff P. M.; Awschalom D. D.; Babcock K.

Assembly and imaging of submicron ferromagnets in GaAs (invited)
J. Appl. Phys. 81, 4331 (1997)
Department of Physics, University of California-Santa Barbara, Santa Barbara, California 93106
160.
1997

Schmidt K. H.; Medeiros-Ribeiro G.; Garcia J.; Petroff P. M.

Size quantization effects in InAs self-assembled quantum dots
Appl. Phys. Lett. 70, 1727 (1997)
QUEST and Materials Department, University of California, Santa Barbara, California 93106
161.
1997

Medeiros-Ribeiro G.; Pikus F. G.; Petroff P. M.; Efros A. L.

Single-electron charging and Coulomb interaction in InAs self-assembled quantum dot arrays
Phys. Rev. B 55, 1568 (1997)
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
162.
1996

Rubin M. E.; Medeiros-Ribeiro G.; O'Shea J. J.; Chin M. A.; Lee E. Y.; Petroff P. M.; Narayanamurti V.

Imaging and Spectroscopy of Single InAs Self‐Assembled Quantum Dots using Ballistic Electron Emission Microscopy
Phys. Rev. Lett. 77, 5268 (1996)
Physics Department, University of California, Santa Barbara, California 93105;
163.
1996

Chen Ching-Hui; Yu D. Ginger; Hu Evelyn L.; Petroff Pierre M.

Photoluminescence studies on radiation enhanced diffusion of dry‐etch damage in GaAs and InP materials
J. Vac. Sci. Technol. B 14, 3684 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
164.
1996

Raymond S.; Fafard S.; Poole P. J.; Wojs A.; Hawrylak P.; Charbonneau S.; Leonard D.; Leon R.; Petroff P. M.; Merz J. L.

State filling and time‐resolved photoluminescence of excited states in In;xGa1-;xAs/GaAs self‐assembled quantum dots
Phys. Rev. B 54, 11548 (1996)
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
165.
1996

Schmidt K. H.; Medeiros-Ribeiro G.; Petroff P. M.; Oestreich M.; Döhler G. H.

Carrier relaxation and electronic structure in InAs self‐assembled quantum dots
Phys. Rev. B 54, 11346 (1996)
Center for Quantized Electronic Structures (QUEST) and Materials Department, University of California, Santa Barbara, California 93106
166.
1996

Nishi Kenichi; Mirin Richard; Leonard Devin; Medeiros-Ribeiro Gilberto; Petroff Pierre M.; Gossard Arthur C.

Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311);B GaAs
J. Appl. Phys. 80, 3466 (1996)
Opto‐Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan and;
167.
1996

Chen Ching-Hui; Green Debora L.; Hu Evelyn L.; Ibbetson James P.; Petroff Pierre M.

Radiation enhanced diffusion of low energy ion‐induced damage
Appl. Phys. Lett. 69, 58 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
168.
1996

Wang P. D.; Merz J. L.; Fafard S.; Akiyama H.; Miura N.; Uchida K.; Petroff P. M.; Oestreich M.; Medeiros-Ribeiro G.; Leonard D.; Leon R.; Sakaki H.

Magnetoluminescence studies of InyAl1-;yAs self‐assembled quantum dots in Al;xGa1-;xAs matrices
Phys. Rev. B 53, 16458 (1996)
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
169.
1996

Schmidt Klaus; Medeiros-Ribeiro Gilbert; Oestreich M.; Petroff Pierre M.

Excited states in InAs self-assembled quantum dots
Proc. SPIE Int. Soc. Opt. Eng. 2694, 185 (1996)
Univ. of California/Santa Barbara (USA)
170.
1996

Ngo T. T.; Petroff P. M.; Sakaki H.; Merz J. L.

Simulation model for self‐ordering of strained islands in molecular‐beam epitaxy
Phys. Rev. B 53, 9618 (1996)
Research Development Corporation of Japan (JRDC), 4‐7‐6 Komaba, Meguro‐ku, Tokyo 153, Japan;
171.
1996

Shi Jing; Kikkawa J. M.; Awschalom D. D.; Medeiros-Ribeiro G.; Petroff P. M.; Babcock K.

Magnetic properties and imaging of Mn‐implanted GaAs semiconductors
J. Appl. Phys. 79, 5296 (1996)
Department of Physics, University of California at Santa Barbara, Santa Barbara, California 93106
172.
1996

Petroff Pierre M.

Physics and materials issues behind the lifetime problem in semiconductor lasers and light-emitting diodes
Proc. SPIE Int. Soc. Opt. Eng. 2683, 52 (1996)
Univ. of California/Santa Barbara (USA)
173.
1996

Herrick Robert W.; Cheng Michael Y.; Beck James M.; Petroff Pierre M.; Scott Jeff W.; Peters Matthew G.; Robinson Gerald D.; Coldren Larry A.; Morgan Robert A.; Hibbs-Brenner Mary K.

Analysis of VCSEL degradation modes
Proc. SPIE Int. Soc. Opt. Eng. 2683, 123 (1996)
Univ. of California/Santa Barbara (USA)
174.
1995

Raymond S.; Fafard S.; Charbonneau S.; Leon R.; Leonard D.; Petroff P. M.; Merz J. L.

Photocarrier recombination in AlyIn1-;yAs/AlxGa1-;xAs self‐assembled quantum dots
Phys. Rev. B 52, 17238 (1995)
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
175.
1995

Cheng Y. Michael; Herrick Robert W.; Petroff Pierre M.; Hibbs-Brenner Mary K.; Morgan Robert A.

Degradation studies of proton‐implanted vertical cavity surface emitting lasers
Appl. Phys. Lett. 67, 1648 (1995)
Department of Materials, University of California, Santa Barbara, California 93106‐5050;
176.
1995

Farfad S.; Leon R.; Leonard D.; Merz J. L.; Petroff P. M.

Phonons and radiative recombination in self‐assembled quantum dots
Phys. Rev. B 52, 5752 (1995)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
177.
1995

Leon R.; Fafard S.; Leonard D.; Merz J. L.; Petroff P. M.

Visible luminescence from semiconductor quantum dots in large ensembles
Appl. Phys. Lett. 67, 521 (1995)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
178.
1995

Leon R.; Stucky G.; Margolese D.; Petroff P. M.

Nanocrystalline Ge filaments in the pores of a mesosilicate
Phys. Rev. B 52, R2285 (1995)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
179.
1995

Bressler-Hill V.; Varma S.; Lorke A.; Nosho B. Z.; Petroff P. M.; Weinberg W. H.

Island scaling in strained heteroepitaxy: InAs/GaAs(001)
Phys. Rev. Lett. 74, 3209 (1995)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
180.
1995

Strand T. A.; Thibeault B. J.; Mui D. S. L.; Coldren L. A.; Petroff P. M.; Hu E. L.

Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by ;insitu processing
Appl. Phys. Lett. 66, 1966 (1995)
Electrical and Computer Engineering Department, University of California–Santa Barbara, Santa Barbara, California 93106;
181.
1995

Medeiros-Ribeiro G.; Leonard D.; Petroff P. M.

Electron and hole energy levels in InAs self‐assembled quantum dots
Appl. Phys. Lett. 66, 1767 (1995)
Materials Department, University of California, Santa Barbara, California 93117
182.
1995

Lorke Axel; English John H.; Gossard Arthur C.; Petroff Pierre M.

Tapered GaAs quantum wells and selectively contactable two‐dimensional electron gases grown by shadow masked molecular‐beam epitaxy
J. Appl. Phys. 77, 3578 (1995)
Materials Department and QUEST, University of California, Santa Barbara, California 93106
183.
1995

Mui D. S. L.; Leonard D.; Coldren L. A.; Petroff P. M.

Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy
Appl. Phys. Lett. 66, 1620 (1995)
QUEST, Electrical and Computer Engineering Department, and Materials Department, University of California, Santa Barbara, California 93106
184.
1994

Drexler H.; Leonard D.; Hansen W.; Kotthaus J. P.; Petroff P. M.

Spectroscopy of quantum levels in charge‐tunable InGaAs quantum dots
Phys. Rev. Lett. 73, 2252 (1994)
Sektion Physik, Ludwig‐Maximilians‐Universität, Geschwister‐Scholl‐Platz 1, 80539 München, Germany;
185.
1994

Leonard D.; Pond K.; Petroff P. M.

Critical layer thickness for self‐assembled InAs islands on GaAs
Phys. Rev. B 50, 11687 (1994)
Materials Department, University of California, Santa Barbara, California 93106
186.
1994

Bressler-Hill V.; Lorke A.; Varma S.; Petroff P. M.; Pond K.; Weinberg W. H.

Initial stages of InAs epitaxy on vicinal GaAs(001)‐(2×4)
Phys. Rev. B 50, 8479 (1994)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
187.
1994

Fafard S.; Leon R.; Leonard D.; Merz J. L.; Petroff P. M.

Visible photoluminescence from N‐dot ensembles and the linewidth of ultrasmall Al;yIn1-;yAs/AlxGa1-;xAs quantum dots
Phys. Rev. B 50, 8086 (1994)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
188.
1994

Fafard S.; Leonard D.; Merz J. L.; Petroff P. M.

Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
Appl. Phys. Lett. 65, 1388 (1994)
Center for Quantized Electronic Structures (QUEST), also Materials and ECE Departments, University of California, Santa Barbara, California 93106
189.
1994

Kikkawa J. M.; Baumberg J. J.; Awschalom D. D.; Leonard D.; Petroff P. M.

Optical studies of locally implanted magnetic ions in GaAs
Phys. Rev. B 50, 2003 (1994)
Department of Physics, University of California, Santa Barbara, California 93106
190.
1994

Pond K.; Lorke A.; Ibbetson J.; Bressler-Hill V.; Maboudian R.; Weinberg W. H.; Gossard A. C.; Petroff P. M.

Step bunching and step equalization on vicinal GaAs(001) surfaces
J. Vac. Sci. Technol. B 12, 2689 (1994)
Materials Department, University of California, Santa Barbara, California 93106
191.
1994

Leonard D.; Fafard S.; Pond K.; Zhang Y. H.; Merz J. L.; Petroff P. M.

Structural and optical properties of self‐assembled InGaAs quantum dots
J. Vac. Sci. Technol. B 12, 2516 (1994)
Department of Materials and the Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
192.
1994

Wang G.; Fafard S.; Leonard D.; Bowers J. E.; Merz J. L.; Petroff P. M.

Time‐resolved optical characterization of InGaAs/GaAs quantum dots
Appl. Phys. Lett. 64, 2815 (1994)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, Santa Barbara, California 93016
193.
1994

Leonard D.; Krishnamurthy M.; Fafard S.; Merz J. L.; Petroff P. M.

Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
J. Vac. Sci. Technol. B 12, 1063 (1994)
Materials Department and QUEST, University of California, Santa Barbara, California 93106
194.
1993

Leonard D.; Krishnamurthy M.; Reaves C. M.; Denbaars S. P.; Petroff P. M.

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
Appl. Phys. Lett. 63, 3203 (1993)
Materials Department and QUEST, University of California, Santa Barbara, California 93106
195.
1993

Mui D. S. L.; Strand T. A.; Thibeault B. J.; Coldren L. A.; Petroff P. M.; Hu E. L.

Characteristics of insitu Cl2 etched/regrown GaAs/GaAs interfaces
J. Vac. Sci. Technol. B 11, 2266 (1993)
The Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
196.
1993

Green D. L.; Hu E. L.; Petroff P. M.; Liberman V.; Nooney M.; Martin R.

Characterization of low energy ion‐induced damage using the multiple quantum well probe technique with an intervening superlattice
J. Vac. Sci. Technol. B 11, 2249 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
197.
1993

Hu S. Y.; Miller M. S.; Young D. B.; Yi J. C.; Leonard D.; Gossard A. C.; Petroff P. M.; Coldren L. A.; Dagli N.

Optical gain anisotropy in serpentine superlattice nanowire‐array lasers
Appl. Phys. Lett. 63, 2015 (1993)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93107
198.
1993

Weman H.; Miller M. S.; Pryor C. E.; Li Y. J.; Bergman P.; Petroff P. M.; Merz J. L.

Optical properties of quantum‐wire arrays in (Al,Ga)As serpentine‐superlattice structures
Phys. Rev. B 48, 8047 (1993)
Department of Physics and Measurement Technology, Linköping University, S‐581 83, Linköping, Sweden;
199.
1993

Chang Ying-Lan; Frova A.; Petroff Pierre M.; Merz James L.; Hu Evelyn L.; Tan I-Hsing; Krishnamurthy Mohan; Emiliani V.

Study of temperature dependent hydrogenation on near‐surface strained quantum wells
J. Vac. Sci. Technol. B 11, 1702 (1993)
Center for Quantized Electronic Structure (QUEST), University of California, Santa Barbara, California 93106
200.
1993

Wang X.-S.; Self K.; Leonard D.; Bressler-Hill V.; Maboudian R.; Petroff P. M.; Weinberg W. H.

Scanning tunneling microscopy studies of Ge/GaAs(100) interface formation
J. Vac. Sci. Technol. B 11, 1477 (1993)
QUEST and Chemical Engineering Department, University of California, Santa Barbara, California 93106
201.
1993

Krishnamurthy M.; Lorke A.; Wassermeier M.; Williams D. R. M.; Petroff P. M.

Molecular‐beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces; Self‐organization and step bunching
J. Vac. Sci. Technol. B 11, 1384 (1993)
Materials Department and Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
202.
1993

Pond K.; Weinberg W. H.; Self K.; Wang X.-S.; Leonard D.; Bressler-Hill V.; Maboudian R.; Petroff P. M.

Scanning tunneling microscopy of flat and vicinal molecular‐beam epitaxy grown GaAs(001)‐(2×4) surfaces; The effect of growth rate
J. Vac. Sci. Technol. B 11, 1374 (1993)
Center for Quantized Electronic Structures and Materials Department, University of California, Santa Barbara, California 93106
203.
1993

Krishnamurthy Mohan; Petroff P. M.; Arias J. M.

p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy
J. Appl. Phys. 73, 7952 (1993)
Engineering Materials Department, University of California, Santa Barbara, California 93106
204.
1993

Krishnamurthy M.; Wassermeier M.; Williams D. R. M.; Petroff P. M.

Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth
Appl. Phys. Lett. 62, 1922 (1993)
University of California, Santa Barbara, California 93106
205.
1993

Green D. L.; Skidmore J. A.; Lishan D. G.; Hu E. L.; Petroff P. M.

Calibration of the multiple quantum well probe technique for dry‐etch‐induced damage analysis
Appl. Phys. Lett. 62, 1253 (1993)
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106
206.
1992

Krishnamurthy Mohan; Miller M. S.; Petroff P. M.

Structure of serpentine superlattice quantum‐wire arrays determined by transmission electron microscopy
Appl. Phys. Lett. 61, 2990 (1992)
Engineering Materials Department, University of California, Santa Barbara, California 93106
207.
1992

Hashemi M. M.; Li Y.; Kiziloglu K.; Wassermeier M.; Petroff P. M.; Mishra U. K.

Direct‐current and radio‐frequency characterization of submicron striped‐channel field effect transistor structures using focused ion beam and electron‐beam lithography
J. Vac. Sci. Technol. B 10, 2945 (1992)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, California 93106
208.
1992

Li Y. J.; Hashemi M.; Wassermeier M.; Merz J. L.; Mishra U. K.; Petroff P. M.

Effects of a pseudomorphic InGaAs layer on focused ion‐beam modulation doped GaAs–AlGaAs quantum well structures
J. Vac. Sci. Technol. B 10, 2886 (1992)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, California 93106
209.
1992

Kiziloḡlu Kürşad; Hashemi Majid M.; Yin Lie-Wei; Li Yuan Jing; Petroff Pierre M.; Mishra Umesh K.; Brown April S.

Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping
J. Appl. Phys. 72, 3798 (1992)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
210.
1992

Weman Helge; Miller Michael L.; Pryor Craig E.; Petroff Pierre M.; Kroemer Herbert; Merz James L.

Luminescence polarization anisotropy in (Al,Ga)As serpentine quantum wire arrays
Proc. SPIE Int. Soc. Opt. Eng. 1675, 120 (1992)
Univ. of California/Santa Barbara (USA)
211.
1992

Skidmore Jay A.; Spiers Guy D.; English John H.; Hu Evelyn L.; Coldren Larry A.; Prater Craig B.; Xu Zheng; Petroff Pierre M.

Low-damage anisotropic radical-beam ion-beam etching and selective chemical etching of focused-ion-beam-damaged GaAs substrates
Proc. SPIE Int. Soc. Opt. Eng. 1671, 268 (1992)
Univ. of California/Santa Barbara (USA)
212.
1992

Wassermeier Matthias; Weman Helge; Miller Michael L.; Petroff Pierre M.; Merz James L.

Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup
Proc. SPIE Int. Soc. Opt. Eng. 1678, 69 (1992)
Univ. of California/Santa Barbara (USA)
213.
1992

Bressler-Hill V.; Wassermeier M.; Pond K.; Maboudian R.; Briggs G. A. D.; Petroff P. M.; Weinberg W. H.

Atom‐resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy
J. Vac. Sci. Technol. B 10, 1881 (1992)
Chemical Engineering and QUEST, University of California, Santa Barbara, California 93106
214.
1992

Miller M. S.; Weman H.; Pryor C. E.; Krishnamurthy M.; Petroff P. M.; Kroemer H.; Merz J. L.

Serpentine superlattice quantum‐wire arrays of (Al,Ga)As grown on vicinal GaAs substrates
Phys. Rev. Lett. 68, 3464 (1992)
Department of Electrical and Computer Engineering, University of California–Santa Barbara, Santa Barbara, California 93106;
215.
1992

Deruelle T.; Ensslin K.; Petroff P. M.; Efros A. L.; Pikus F. G.

Effective size of scattering centers in a two‐dimensional electron gas
Phys. Rev. B 45, 9082 (1992)
Materials Department, University of California, Santa Barbara, California 93106
216.
1992

Wassermeier M.; Weman H.; Miller M. S.; Petroff P. M.; Merz J. L.

Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique
J. Appl. Phys. 71, 2397 (1992)
Center for Quantized Electronic Structures, QUEST, University of California, Santa Barbara, California 93106
217.
1992

Xu Z.; Wassermeier M.; Li Y. J.; Petroff P. M.

Lateral band gap modulation by buried stressor structures in III–V compounds semiconductor quantum‐well structures
Appl. Phys. Lett. 60, 586 (1992)
University of California, Santa Barbara, California 93106
218.
1991

Skidmore J. A.; Coldren L. A.; Hu E. L.; Olsen J. A.; Young D. B.; Green D. L.; Petroff P. M.

Investigation of radical‐beam ion‐beam etching‐induced damage in GaAs/AlGaAs quantum‐well structures
J. Vac. Sci. Technol. B 9, 3516 (1991)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
219.
1991

Beinstingl W.; Li Y. J.; Weman H.; Merz J.; Petroff P. M.

Optical properties of quantum structures fabricated by focused Ga+ ion beam implantation
J. Vac. Sci. Technol. B 9, 3479 (1991)
Electrical and Computer Engineering Department and Materials Department, University of California, Santa Barbara, California 93106
220.
1991

Li Y. J.; Sasa S.; Beinstingl W.; Miller M. S.; Xu Z.; Snider G.; Petroff P. M.

Optical studies of direct modulation doping and quantum wire formation by focused Si on beam implantation
J. Vac. Sci. Technol. B 9, 3456 (1991)
Electrical and Computer Engineering Department and Materials Department, University of California, Santa Barbara, California 93106
221.
1991

Petroff P. M.; Li Y. J.; Xu Z.; Beinstingl W.; Sasa S.; Ensslin K.

Nanostructures processing by focused ion beam implantation
J. Vac. Sci. Technol. B 9, 3074 (1991)
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
222.
1991

Chang L. D.; Tseng M. Z.; Samoska L. A.; O'Shea J. J.; Li Y. J.; Caine E. J.; Hu E. L.; Petroff P. M.; Kroemer H.

Insitu YBa2Cu3O7-;x superconductor films on GaAs/AlAs superlattices
J. Appl. Phys. 70, 5108 (1991)
Department of Electrical and Computer Engineering and Department of Materials, University of California, Santa Barbara, California 93106
223.
1991

Wassermeier M.; Kamiya I.; Aspnes D. E.; Florez L. T.; Harbison J. P.; Petroff P. M.

Optical spectroscopy of (001) GaAs and AlAs under molecular‐beam epitaxy growth conditions
J. Vac. Sci. Technol. B 9, 2263 (1991)
University of California, Santa Barbara, California 93106
224.
1991

Xu Z.; Petroff P. M.

Strain‐induced carrier confinement in a buried stressor structure
J. Appl. Phys. 69, 6564 (1991)
Materials Department and Department of ECE, University of California, Santa Barbara, California 93106
225.
1990

Lu Yan-Ten; Petroff Pierre; Metiu Horia

Growth kinetics simulation of the Al‐Ga self‐organization on (100) GaAs vicinal surfaces
Appl. Phys. Lett. 57, 2683 (1990)
Department of Chemistry, University of California, Santa Barbara, California 93106
226.
1990

Sasa S.; Miller M. S.; Li Y. J.; Xu Z.; Ensslin K.; Petroff P. M.

Localized two‐dimensional electron gas formation by focused Si ion beam implantation into GaAs/AlGaAs heterostructures
Appl. Phys. Lett. 57, 2259 (1990)
Materials Department, University of California, Santa Barbara, California 93106
227.
1990

Li Y. J.; Tsuchiya M.; Petroff P. M.

Electron beam irradiation enhancement of Al‐Ga interdiffusion at GaAs/AlGaAs quantum well interfaces
Appl. Phys. Lett. 57, 472 (1990)
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
228.
1990

Ensslin K.; Petroff P. M.

Magnetotransport through an antidot lattice in GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. B 41, 12307 (1990)
Materials Department, University of California, Santa Barbara, California 93106
229.
1990

Rao M. R.; Tarsa E. J.; Samoska L. A.; English J. H.; Gossard A. C.; Kroemer H.; Petroff P. M.; Hu E. L.

Superconducting YBaCuO thin films on GaAs/AlGaAs
Appl. Phys. Lett. 56, 1905 (1990)
Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106
230.
1990

Gossard Arthur C.; Petroff Pierre M.; Coldren Larry A.; Tsuchiya Masahiro

Growth and fabrication of quantum wells, wires, and dots for optical applications
Proc. SPIE Int. Soc. Opt. Eng. 1216, 82 (1990)
Univ. of California/Santa Barbara (USA)
231.
1990

Chalmers S. A.; Gossard A. C.; Petroff P. M.; Kroemer H.

A reflection high‐energy electron diffraction study of AlAs/GaAs tilted superlattice growth by migration‐enhanced epitaxy
J. Vac. Sci. Technol. B 8, 431 (1990)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
232.
1990

Laruelle F.; Bagchi A.; Tsuchiya M.; Merz J.; Petroff P. M.

Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures
Appl. Phys. Lett. 56, 1561 (1990)
Materials Department and Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106
233.
1990

Rao M. R.; Tarsa E. J.; Kroemer H.; Gossard A. C.; Hu E. L.; Petroff P. M.; Olson W. L.; Eddy M. M.

Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film
Appl. Phys. Lett. 56, 490 (1990)
Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106
234.
1989

Laruelle F.; Hu P.; Simes R.; Kubena R.; Robinson W.; Merz J.; Petroff P. M.

Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures
J. Vac. Sci. Technol. B 7, 2034 (1989)
Materials Department and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106
235.
1989

Chalmers S. A.; Gaines J. M.; Petroff P. M.; Gossard A. C.; Kroemer H.

A reflection high‐energy electron diffraction study of (100) GaAs vicinal surfaces
J. Vac. Sci. Technol. B 7, 1357 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
236.
1989

Petroff P. M.; Hu Yu Peng; Milstein Frederick

Dislocation luminescence in HgI2 single crystals
J. Appl. Phys. 66, 2525 (1989)
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
237.
1989

Madhava-Menon Eswar C.; Petroff P. M.; Waters R. G.

Degradation kinetics of GaAs quantum well lasers
Appl. Phys. Lett. 54, 2683 (1989)
Department of Electrical and Computer Engineering and Department of Materials, University of California at Santa Barbara, Santa Barbara, California 93106
238.
1989

Tsuchiya M.; Petroff P. M.; Coldren L. A.

Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates
Appl. Phys. Lett. 54, 1690 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
239.
1989

Tsuchiya M.; Coldren L. A.; Holtz P. O.; Simes R. J.; Yan R. H.; Gaines J. M.; Petroff P. M.

Observation of polarization dependence of absorption in a quantum well wire array grown directly by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 315 (1989)
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106
240.
1989

Tsuchiya M.; Gaines J. M.; Yan R. H.; Simes R. J.; Holtz P. O.; Coldren L. A.; Petroff P. M.

Optical anisotropy in a quantum‐well‐wire array with two‐dimensional quantum confinement
Phys. Rev. Lett. 62, 466 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
241.
1988

Liu T. Y.; Petroff P. M.; Kroemer H.

Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period
J. Appl. Phys. 64, 6810 (1988)
Department of Electrical and Computer Engineering and Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
242.
1988

Hu Yu-Peng; Petroff P. M.; Qian Xueyu; Brown A. S.

Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces
Appl. Phys. Lett. 53, 2194 (1988)
Materials Department and Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106
243.
1988

Wong H. F.; Green D. L.; Liu T. Y.; Lishan D. G.; Bellis M.; Hu E. L.; Petroff P. M.; Holtz P. O.; Merz J. L.

Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures
J. Vac. Sci. Technol. B 6, 1906 (1988)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
244.
1988

Gaines J. M.; Petroff P. M.; Kroemer H.; Simes R. J.; Geels R. S.; English J. H.

Molecular‐beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
J. Vac. Sci. Technol. B 6, 1378 (1988)
Department of Electrical and Computer Engineering and Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
245.
1987

Petroff P. M.; Cibert J.; Gossard A. C.; Dolan G. J.; Tu C. W.

Interface structure and optical properties of quantum wells and quantum boxes
J. Vac. Sci. Technol. B 5, 1204 (1987)
Materials Program and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
246.
1986

Cibert J.; Petroff P. M.; Dolan G. J.; Pearton S. J.; Gossard A. C.; English J. H.

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
Appl. Phys. Lett. 49, 1275 (1986)
AT&T Laboratories, Murray Hill, New Jersey 07974;

Co-authors

Co-publications
37

Warburton, Richard J.
36

Gerardot, Brian D.
34

Schoenfeld, Winston
33

Karrai, Khaled
29

Badolato, Antonio
25

Garcia, Jorge
23

Medeiros-Ribeiro, Gilberto
22

Merz, James
19

Holtz, P.-O.
19

Hu, Evelyn L.
17

Dalgarno, Paul A.
15

Gershoni, D
14

Bouwmeester, Dirk
14

Coldren, Larry
13

Gossard, Arthur C.