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Nötzel, Richard

Computed

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Research Profile

Latest Publications

1.
2011

Marell Milan J.H.; Smalbrugge Barry; Geluk Erik Jan; van Veldhoven Peter J.; Barcones Beatrix; Koopmans Bert; Nötzel Richard; Smit Meint K.; Hill Martin T.

Plasmonic distributed feedback lasers at telecommunications wavelengths
Opt. Express 19, 15109 (2011)
2.
2011

Urbańczyk Adam; van Otten Frank W. M.; Nötzel Richard

Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics
Appl. Phys. Lett. 98, 243110 (2011)
Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
3.
2011

Ding Kang; Liu Zhicheng; Yin Leijun; Wang Hua; Liu Ruibin; Hill Martin T.; Marell Milan J. H.; van Veldhoven Peter J.; Nötzel Richard; Ning C. Z.

Electrical injection, continuous wave operation of subwavelength-metallic-cavity lasers at 260 K
Appl. Phys. Lett. 98, 231108 (2011)
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

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All Publications

1.
2011

Marell Milan J.H.; Smalbrugge Barry; Geluk Erik Jan; van Veldhoven Peter J.; Barcones Beatrix; Koopmans Bert; Nötzel Richard; Smit Meint K.; Hill Martin T.

Plasmonic distributed feedback lasers at telecommunications wavelengths
Opt. Express 19, 15109 (2011)
2.
2011

Urbańczyk Adam; van Otten Frank W. M.; Nötzel Richard

Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics
Appl. Phys. Lett. 98, 243110 (2011)
Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
3.
2011

Ding Kang; Liu Zhicheng; Yin Leijun; Wang Hua; Liu Ruibin; Hill Martin T.; Marell Milan J. H.; van Veldhoven Peter J.; Nötzel Richard; Ning C. Z.

Electrical injection, continuous wave operation of subwavelength-metallic-cavity lasers at 260 K
Appl. Phys. Lett. 98, 231108 (2011)
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
4.
2011

Dündar Mehmet A.; Wang Bowen; Nötzel Richard; Karouta Fouad; van der Heijden Rob W.

Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities
J. Opt. Soc. Am. B 28, 1514 (2011)
5.
2011

Midolo L.; van Veldhoven P. J.; Dündar M. A.; Nötzel R.; Fiore A.

Electromechanical wavelength tuning of double-membrane photonic crystal cavities
Appl. Phys. Lett. 98, 211120 (2011)
COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven, The Netherlands
6.
2011

Yuan Jiayue; Wang Hao; van Veldhoven René P. J.; Wang Jia; de Vries Tjibbe; Smalbrugge Barry; Jin C. Y.; Nouwens Peter; Geluk Erik Jan; Silov Andrei Yu.; Nötzel Richard

Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots
Appl. Phys. Lett. 98, 201904 (2011)
Department of Applied Physics, COBRA Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
7.
2011

Wang Bowen; Dündar Mehmet A.; Nötzel Richard; Karouta Fouad; He Sailing; van der Heijden Rob W.

Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning
J. Opt. Soc. Am. B 28, 721 (2011)
8.
2010

Wang Hao; Yuan Jiayue; van Veldhoven René P. J.; de Vries Tjibbe; Smalbrugge Barry; Geluk Erik Jan; Nötzel Richard

Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties
J. Appl. Phys. 108, 104308 (2010)
Department of Applied Physics, COBRA Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
9.
2010

Gaggero A.; Nejad S. Jahanmiri; Marsili F.; Mattioli F.; Leoni R.; Bitauld D.; Sahin D.; Hamhuis G. J.; Nötzel R.; Sanjines R.; Fiore A.

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications
Appl. Phys. Lett. 97, 151108 (2010)
COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
10.
2010

Wang Bowen; Dündar Mehmet A.; Nötzel Richard; Karouta Fouad; He Sailing; van der Heijden Rob W.

Photonic crystal slot nanobeam slow light waveguides for refractive index sensing
Appl. Phys. Lett. 97, 151105 (2010)
COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
11.
2010

Wang Bowen; Dündar Mehmet A.; Silov Andrei Yu.; Nötzel Richard; Karouta Fouad; He Sailing; van der Heijden Rob W.

Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal
Opt. Lett. 35, 2603 (2010)
12.
2010

Urbańczyk A.; Hamhuis G. J.; Nötzel R.

Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal
Appl. Phys. Lett. 97, 043105 (2010)
Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
13.
2010

Kotani Junji; van Veldhoven Peter J.; Nötzel Richard

What Is the Longest Lasing Wavelength of InAs/InP (100) Quantum Dots Grown by Metal Organic Vapor Phase Epitaxy?
Appl. Phys. Express 3, 072101 (2010)
COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
14.
2010

Urbańczyk A.; Hamhuis G. J.; Nötzel R.

Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission
Appl. Phys. Lett. 96, 113101 (2010)
Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
15.
2010

Dündar Mehmet A.; Ryckebosch Els C.I.; Nötzel Richard; Karouta Fouad; van IJzendoorn Leo J.; van der Heijden Rob W.

Sensitivities of InGaAsP photonic crystal membrane nanocavities to hole refractive index
Opt. Express 18, 4049 (2010)
16.
2010

Campbell-Ricketts T. E. J.; Kleemans N. A. J. M.; Nötzel R.; Silov A. Yu.; Koenraad P. M.

The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots
Appl. Phys. Lett. 96, 033102 (2010)
Photonics and Semiconductor Nanophysics, COBRA, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
17.
2010

Urbańczyk A.; Hamhuis G. J.; Nötzel R.

In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties
J. Appl. Phys. 107, 014312 (2010)
Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
18.
2009

Yuan Jiayue; Wang Hao; van Veldhoven Peter J.; Nötzel Richard

Impact of base size and shape on formation control of multifaceted InP nanopyramids by selective area metal organic vapor phase epitaxy
J. Appl. Phys. 106, 124304 (2009)
COBRA Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
19.
2009

Dündar M. A.; Kicken H. H. J. E.; Silov A. Yu.; Nötzel R.; Karouta F.; Salemink H. W. M.; van der Heijden R. W.

Birefringence-induced mode-dependent tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities
Appl. Phys. Lett. 95, 181111 (2009)
COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
20.
2009

Kotani Junji; van Veldhoven Peter J.; Nötzel Richard

Mid-infrared emission from InAs quantum dots, wells, and dots on well nanostructures grown on InP (100) by metal organic vapor phase epitaxy
J. Appl. Phys. 106, 093112 (2009)
COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
21.
2009

Kicken H. H. J. E.; Barbu I.; van der Heijden R. W.; Karouta F.; Nötzel R.; van der Drift E.; Salemink H. W. M.

Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals
J. Appl. Phys. 106, 083106 (2009)
COBRA Research Institute and Center for NanoMaterials, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
22.
2009

van Veldhoven P. J.; Chauvin N.; Fiore A.; Nötzel R.

Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer
Appl. Phys. Lett. 95, 113110 (2009)
COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
23.
2009

Kicken H. H. J. E.; Barbu I.; van der Heijden R. W.; Karouta F.; Nötzel R.; van der Drift E.; Salemink H. W. M.

Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals
Opt. Lett. 34, 2207 (2009)
COBRA Research Institute and Center for NanoMaterials, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
24.
2009

Selçuk E.; Silov A. Yu.; Nötzel R.

Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates
Appl. Phys. Lett. 94, 263108 (2009)
COBRA Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
25.
2009

Hill Martin T.; Marell Milan; Leong Eunice S. P.; Smalbrugge Barry; Zhu Youcai; Sun Minghua; van Veldhoven Peter J.; Geluk Erik Jan; Karouta Fouad; Oei Yok-Siang; Nötzel Richard; Ning Cun-Zheng; Smit Meint K.

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides
Opt. Express 17, 11107 (2009)
26.
2009

Wang Hao; Yuan Jiayue; Rieger Torsten; van Veldhoven Peter J.; Nouwens Peter; Eijkemans Tom J.; de Vries Tjibbe; Smalbrugge Barry; Geluk Erik Jan; Nötzel Richard

Distribution control of 1.55 μ;m InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy
Appl. Phys. Lett. 94, 143103 (2009)
COBRA Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
27.
2009

Kleemans N. A. J. M.; van Bree J.; Bozkurt M.; Koenraad P. M.; Silov A. Yu.; Nötzel R.; Nouwens P. A.; van Veldhoven P. J.; Flatté M. E.

Size-dependent exciton g factor in self-assembled InAs/InP quantum dots
Phys. Rev. B 79, 045311 (2009)
Photonics and Semiconductor Nanophysics, COBRA, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
28.
2008

Sritirawisarn N.; van Otten F. W. M.; Eijkemans T. J.; Nötzel R.

Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal
Appl. Phys. Lett. 93, 131906 (2008)
COBRA Inter-University Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
29.
2008

Roelkens G.; Liu L.; Van Thourhout D.; Baets R.; Nötzel R.; Raineri F.; Sagnes I.; Beaudoin G.; Raj R.

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration
J. Appl. Phys. 104, 033117 (2008)
Photonics Research Group (INTEC), Ghent University-IMEC, Sint-Pietersnieuwstraat 41, Ghent B-9000, Belgium
30.
2008

Gelens Lendert; Bente Erwin A. J. M.; Nötzel Richard; Dorren Harm J. S.; Calabretta Nicola; Danckaert Jan; Van der Sande Guy; Beri Stefano; Smit Meint K.

Optical injection in semiconductor ring lasers: backfire dynamics
Opt. Express 16, 10968 (2008)
31.
2008

Rietjens J. H. H.; Quax G. W. W.; Bosco C. A. C.; Nötzel R.; Silov A. Yu.; Koopmans B.

Optical control over electron g factor and spin decoherence in (In,Ga)As/;GaAs quantum dots
J. Appl. Phys. 103, 07B116 (2008)
Department of Applied Physics, Center for Nanomaterials, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
32.
2008

Anantathanasarn S.; van Veldhoven P. J.; Eijkemans T. J.; de Vries T.; Smalbrugge E.; Geluk E. J.; Bente E. A. J. M.; Oei Y. S.; Smit M. K.; Nötzel R.

Polarization control of gain of stacked InAs/;InP (100) quantum dots at 1.55 μ;m; Interplay between ground and excited state transitions
Appl. Phys. Lett. 92, 123113 (2008)
Inter-University Research Institute on Communication Technology, Basic Research and Applications (COBRA), Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands
33.
2008

Ulloa J. M.; Anantathanasarn S.; van Veldhoven P. J.; Koenraad P. M.; Nötzel R.

Influence of an ultrathin GaAs interlayer on the structural properties of InAs/;InGaAsP/;InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy
Appl. Phys. Lett. 92, 083103 (2008)
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
34.
2007

Heck Martijn J. R.; Bente Erwin A. J. M.; Smalbrugge Barry; Oei Yok-Siang; Smit Meint K.; Anantathanasarn Sanguan; Nötzel Richard

Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 μm
Opt. Express 15, 16292 (2007)
35.
2007

Kok Abigaël; Geluk Erik Jan; Docter Boudewijn; van der Tol Jos; Nötzel Richard; Smit Meint; Baets Roel

Transmission of pillar-based photonic crystal waveguides in InP technology
Appl. Phys. Lett. 91, 201109 (2007)
COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
36.
2007

Selçuk E.; Hamhuis G. J.; Nötzel R.

Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates
J. Appl. Phys. 102, 094301 (2007)
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
37.
2007

Zhou D.; Anantathanasarn S.; van Veldhoven P. J.; van Otten F. W. M.; Eijkemans T. J.; de Vries T.; Smalbrugge E.; Nötzel R.

Submicron active-passive integration with position and number controlled InAs/;InP (100) quantum dots (1.55 μ;m wavelength region) by selective-area growth
Appl. Phys. Lett. 91, 131102 (2007)
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
38.
2007

Sritirawisarn N.; van Otten F. W. M.; Eijkemans T. J.; Nötzel R.

Formation of linear InAs quantum dot arrays on InGaAsP/;InP (100) by self-organized anisotropic strain engineering and their optical properties
J. Appl. Phys. 102, 053514 (2007)
COBRA Inter-University Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
39.
2007

Bogaart E. W.; Haverkort J. E. M.; Nötzel R.

Observation of a Long‐Range Interaction between Semiconductor Quantum Dots
AIP Conf. Proc. 893, 949 (2007)
Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600MB Eindhoven, The Netherlands
40.
2007

van Lippen T.; Nötzel R.; Silov A. Yu.; Wolter J. H.

Delocalized Electron States in Quantum Dot Molecules
AIP Conf. Proc. 893, 903 (2007)
COBRA Inter‐University Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, the Netherlands;
41.
2007

Carlström C. F.; van der Heijden R.; Kjellander B. K. C.; van der Heijden R. W.; Bastiaansen C. W. M.; Broer D. J.; Karouta F.; Nötzel R.; van der Drift E.; Salemink H. W. M.

Deep Hole InP Photonic Crystals Infiltrated With Solid Polymers And Liquid Crystals
AIP Conf. Proc. 893, 1163 (2007)
COBRA Inter‐University Research Institute, Eindhoven University of Technology, PO Box 513, NL‐5600 MB Eindhoven, The Netherlands;
42.
2007

Lippen T. v.; Silov A. Yu.; Nötzel R.

Extended electron states in lateral quantum dot molecules investigated with photoluminescence
Phys. Rev. B 75, 115414 (2007)
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
43.
2007

Sreenivasan D.; Haverkort J. E. M.; Eijkemans T. J.; Nötzel R.

Photoluminescence from low temperature grown InAs/;GaAs quantum dots
Appl. Phys. Lett. 90, 112109 (2007)
Department of Applied Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
44.
2007

Yousefi M.; Barbarin Y.; Beri S.; Nötzel R.; Smit M. K.; Bente E. A. J. M.; Lenstra D.

New Role for Nonlinear Dynamics and Chaos in Integrated Semiconductor Laser Technology
Phys. Rev. Lett. 98, 044101 (2007)
COBRA Research Institute, Technische Universiteit Eindhoven, The Netherlands
45.
2006

Zhou D.; Anantathanasarn S.; van Veldhoven P. J.; van Otten F. W. M.; Eijkemans T. J.; de Vries T.; Smalbrugge E.; Nötzel R.

Lateral wavelength control of InAs/;InGaAsP/;InP (100) quantum dots in the 1.55 μ;m region by selective-area metal organic vapor-phase epitaxy
J. Appl. Phys. 100, 113512 (2006)
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
46.
2006

Cade N. I.; Gotoh H.; Kamada H.; Nakano H.; Anantathanasarn S.; Nötzel R.

Optical characteristics of single InAs/;InGaAsP/;InP(100) quantum dots emitting at 1.55 μ;m
Appl. Phys. Lett. 89, 181113 (2006)
NTT Basic Research Laboratories, NTT Corporation, Atsugi, 243-0198 Japan
47.
2006

Barbarin Yohan; Bente Erwin A. J. M.; Heck Martijn J. R.; Oei Y. S.; Nötzel Richard; Smit Meint K.

Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53µm
Opt. Express 14, 9716 (2006)
48.
2006

Bogaart E. W.; Haverkort J. E. M.; Mano T.; van Lippen T.; Hamhuis G. J.; Nötzel R.

Circular dichroism in InAs/;GaAs quantum dots; Confinement-induced magnetism
Phys. Rev. B 74, 153307 (2006)
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
49.
2006

Zhou D.; Nötzel R.; van Otten F. W. M.; van Veldhoven P. J.; Eijkemans T. J.

InAs/;InGaAsP sidewall quantum dots on shallow-patterned InP (311)A
J. Appl. Phys. 100, 063505 (2006)
Photonics and Semiconductor Nanophysics, COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
50.
2006

Roelkens G.; Van Thourhout D.; Baets R.; Nötzel R.; Smit M.

Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit
Opt. Express 14, 8154 (2006)
51.
2006

Anantathanasarn S.; Nötzel R.; van Veldhoven P. J.; van Otten F. W. M.; Barbarin Y.; Servanton G.; de Vries T.; Smalbrugge E.; Geluk E. J.; Eijkemans T. J.; Bente E. A. J. M.; Oei Y. S.; Smit M. K.; Wolter J. H.

Lasing of wavelength-tunable (1.55 μ;m region) InAs/;InGaAsP/;InP (100) quantum dots grown by metal organic vapor-phase epitaxy
Appl. Phys. Lett. 89, 073115 (2006)
Inter-University Research Institute on Communication Technology: Basic Research and Applications (COBRA), Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
52.
2006

Nötzel R.; Anantathanasarn S.; van Veldhoven P. J.; van Otten F. W. M.; Eijkemans T. J.; Trampert A.; Satpati B.; Wolter J. H.

Wavelength tuning of InAs/;InP quantum dots; Control of As/;P surface exchange reaction
J. Vac. Sci. Technol. B 24, 2075 (2006)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
53.
2006

Zhou D.; Eijkemans T. J.; van Otten F. W. M.; Nötzel R.; Wolter J. H.

Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/;InP
J. Appl. Phys. 99, 103511 (2006)
COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
54.
2006

van der Heijden R.; Carlström C. F.; Snijders J. A. P.; van der Heijden R. W.; Karouta F.; Nötzel R.; Salemink H. W. M.; Kjellander B. K. C.; Bastiaansen C. W. M.; Broer D. J.; van der Drift E.

InP-based two-dimensional photonic crystals filled with polymers
Appl. Phys. Lett. 88, 161112 (2006)
COBRA Inter-University Research Institute and Center for NanoMaterials, Eindhoven University of Technology, P. O. Box 513, NL-5600 MB Eindhoven, The Netherlands
55.
2006

Bogaart E. W.; van Lippen T.; Haverkort J. E. M.; Nötzel R.; Wolter J. H.

Coherent acoustic phonons in strain engineered InAs/;GaAs quantum dot clusters
Appl. Phys. Lett. 88, 143120 (2006)
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
56.
2006

Gurioli M.; Vinattieri A.; Zamfirescu M.; Colocci M.; Sanguinetti S.; Nötzel Richard

Recombination kinetics of InAs quantum dots: Role of thermalization in dark states
Phys. Rev. B 73, 085302 (2006)
CNISM, Department of Physics and LENS, Via Sansone 1, I-50019, Sesto Fiorentino, Italy
57.
2006

Anantathanasarn S.; Nötzel R.; van Veldhoven P. J.; van Otten F. W. M.; Eijkemans T. J.; Wolter J. H.

Stacking and polarization control of wavelength-tunable (1.55 μ;m region) InAs/;InGaAsP/;InP (100) quantum dots
Appl. Phys. Lett. 88, 063105 (2006)
European Institute for Telecommunication Technologies (eiTT)/Inter-University Research Institute on Communication Technology: Basic Research and Applications (COBRA), Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
58.
2005

Roelkens Gunther; Brouckaert Joost; Nötzel Richard; Baets Roel; Van Thourhout Dries; Bogaerts Wim; Dumon Pieter; Taillaert Dirk; Smit Meint

Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits
Opt. Express 13, 10102 (2005)
59.
2005

Bogaart E. W.; Haverkort J. E. M.; Mano T.; van Lippen T.; Nötzel R.; Wolter J. H.

Role of the continuum background for carrier relaxation in InAs quantum dots
Phys. Rev. B 72, 195301 (2005)
COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
60.
2005

Gurioli M.; Koguchi N.; Mano T.; Sanguinetti S.; Nötzel Richard

Quantum dot decoherence measured by ensemble photoluminescence
J. Appl. Phys. 98, 103527 (2005)
Dipartimento di Fisica and European Laboratory for Non-linear Spectroscopy (LENS), Universitá di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Italy;
61.
2005

Bogaart E. W.; Haverkort J. E. M.; Eijkemans T. J.; Mano T.; Nötzel R.; Wolter J. H.

Dichroic reflection of InAs/;GaAs quantum dots
J. Appl. Phys. 98, 073519 (2005)
Communication Technology Basic Research and Applications (COBRA) Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P. O. BOX 513, 5600 MB Eindhoven, The Netherlands
62.
2005

Offermans P.; Koenraad P. M.; Nötzel R.; Wolter J. H.; Pierz K.

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy
Appl. Phys. Lett. 87, 111903 (2005)
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
63.
2005

van Lippen Twan; Nötzel Richard; Wolter Joachim H.

Ordering of quantum dot molecules by self-organization
J. Vac. Sci. Technol. B 23, 1693 (2005)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
64.
2005

Anantathanasarn S.; Eijkemans T. J.; van Veldhoven P. J.; Nötzel R.; Wolter J. H.

Wavelength-tunable (1.55‐μ;m region) InAs quantum dots in InGaAsP/;InP (100) grown by metal-organic vapor-phase epitaxy
J. Appl. Phys. 98, 013503 (2005)
European Institute for Telecommunication Technologies (eiTT)/Inter-University Research Institute on Communication Technology; Basic Research and Applications (COBRA), Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
65.
2005

Bogaart E. W.; Haverkort J. E. M.; Mano T.; Nötzel R.; Wolter J. H.

Bleaching Dynamics In InAs Self‐Assembled Quantum Dots
AIP Conf. Proc. 772, 731 (2005)
eiTT/COBRA Inter‐University Research Institute, Eindhoven University of Technology Physics Department, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;
66.
2005

Lippen T. v.; Nötzel R.; Hamhuis G. J.; Wolter J. H.

Self‐Organized Lattice of Ordered Quantum Dot Molecules
AIP Conf. Proc. 772, 613 (2005)
eiTT/COBRA Inter‐University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
67.
2005

Bogaart E. W.; Nötzel R.; Gong Q.; Haverkort J. E. M.; Wolter J. H.

Ultrafast carrier capture at room temperature in InAs/;InP quantum dots emitting in the 1.55 μ;m wavelength region
Appl. Phys. Lett. 86, 173109 (2005)
COBRA Inter-University Research Institute, Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
68.
2005

Zhou D.; Nötzel R.; Eijkemans T. J.; van Otten F. W. M.; van Veldhoven P. J.; Koenraad P. M.; Offermans P.; Gong Q.; Wolter J. H.

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A
J. Appl. Phys. 97, 063510 (2005)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
69.
2005

van Lippen T.; Nötzel R.; Hamhuis G. J.; Wolter J. H.

Ordered quantum dot molecules and single quantum dots formed by self-organized anisotropic strain engineering
J. Appl. Phys. 97, 044301 (2005)
European Institute of Telecommunication Technologies/Communication Technology, Basic Research and Applications (eiTT/COBRA) Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
70.
2005

Mano Takaaki; Nötzel Richard; Gong Qian; v. Lippen Twan; Hamhuis Gerrit J.; Eijkemans Tom J.; Wolter Joachim H.

Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States
Jpn. J. Appl. Phys., Part 1 44, 6829 (2005)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
71.
2005

Mano T.; Nötzel R.; Eijkemans T. J.; Hamhuis G. J.; Zhou D.; Wolter J. H.

Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates
J. Appl. Phys. 97, 014304 (2005)
eiTT/COBRA, Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
72.
2004

Gong Q.; Offermans P.; Nötzel R.; Koenraad P. M.; Wolter J. H.

Capping process of InAs/;GaAs quantum dots studied by cross-sectional scanning tunneling microscopy
Appl. Phys. Lett. 85, 5697 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
73.
2004

He J.; Nötzel R.; Offermans P.; Koenraad P. M.; Gong Q.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Formation of columnar (In,Ga)As quantum dots on GaAs(100)
Appl. Phys. Lett. 85, 2771 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
74.
2004

Gong Q.; Nötzel R.; van Veldhoven P. J.; Eijkemans T. J.; Wolter J. H.

InAs/;InP quantum dots emitting in the 1.55 μ;m wavelength region by inserting submonolayer GaP interlayers
Appl. Phys. Lett. 85, 1404 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
75.
2004

Lippen T. v.; Nötzel R.; Hamhuis G. J.; Wolter J. H.

Self-organized lattice of ordered quantum dot molecules
Appl. Phys. Lett. 85, 118 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
76.
2004

Nötzel Richard; Mano Takaaki; Wolter Joachim H.

Self-organized template formation for quantum dot ordering
J. Vac. Sci. Technol. A 22, 1912 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
77.
2004

Prasanth R.; Haverkort J. E. M.; Deepthy A.; Bogaart E. W.; van der Tol J. J. G. M.; Patent E. A.; Zhao G.; Gong Q.; van Veldhoven P. J.; Nötzel R.; Wolter J. H.

All-optical switching due to state filling in quantum dots
Appl. Phys. Lett. 84, 4059 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands;
78.
2004

Alderighi Daniele; Zamfirescu Marian; Vinattieri Anna; Gurioli Massimo; Sanguinetti Stefano; Povolotskyi Michael; Gleize Jerome; Di Carlo Aldo; Lugli Paolo; Nötzel Richard

Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires
Appl. Phys. Lett. 84, 786 (2004)
INFM, Department of Physics and LENS, University of Florence, Via Sansone 1, 50019, Sesto Fiorentino, Italy
79.
2004

Gong Q.; Nötzel R.; van Veldhoven P. J.; Eijkemans T. J.; Wolter J. H.

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
Appl. Phys. Lett. 84, 275 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
80.
2004

Mano T.; Nötzel R.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Direct imaging of self-organized anisotropic strain engineering for improved one-dimensional ordering of (In,Ga)As quantum dot arrays
J. Appl. Phys. 95, 109 (2004)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
81.
2003

Zhan H. H.; Nötzel R.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing
J. Appl. Phys. 93, 5953 (2003)
eiTT / COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
82.
2002

Gong Q.; Nötzel R.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control
Appl. Phys. Lett. 81, 3254 (2002)
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
83.
2002

Mano T.; Nötzel R.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy
J. Appl. Phys. 92, 4043 (2002)
eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P. O. Box 513, 5600MB Eindhoven, The Netherlands
84.
2002

Gong Q.; Nötzel R.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots
Appl. Phys. Lett. 81, 1887 (2002)
COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands;
85.
2002

Mano T.; Nötzel R.; Hamhuis G. J.; Eijkemans T. J.; Wolter J. H.

Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template
Appl. Phys. Lett. 81, 1705 (2002)
COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands;

Co-authors

Co-publications
31

Wolter, Joachim H.
26

Eijkemans, Tom J.
23

van Veldhoven, Peter J.
18

Hamhuis, GJ
12

van der Heijden, Rob
11

Karouta, Fouad
11

van Otten, FWM
11

Smit, Meint K.
10

Anantathanasarn, Sanguan
10

Gong, Qian
9

Haverkort, JEM
9

Mano, Takaaki
8

Geluk, Erik Jan
8

Bogaart, E. W.
8

Silov, A. Yu.