Morkoç, Hadis

Yankovich A. B.; Kvit A. V.; Li X.; Zhang F.; Avrutin V.; Liu H. Y.; Izyumskaya N.; Özgür Ü.; Morkoç H.; Voyles P. M.

Hexagonal-based pyramid void defects in GaN and InGaN

Ščajev Patrik; Jarašiūnas Kęstutis; Okur Serdal; Özgür Ümit; Morkoç Hadis

Carrier dynamics in bulk GaN

Ščajev P.; Jarašiūnas K.; Özgür Ü.; Morkoç H.; Leach J.; Paskova T.

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Yankovich A. B.; Kvit A. V.; Li X.; Zhang F.; Avrutin V.; Liu H. Y.; Izyumskaya N.; Özgür Ü.; Morkoç H.; Voyles P. M.

Hexagonal-based pyramid void defects in GaN and InGaN

Ščajev Patrik; Jarašiūnas Kęstutis; Okur Serdal; Özgür Ümit; Morkoç Hadis

Carrier dynamics in bulk GaN

Ščajev P.; Jarašiūnas K.; Özgür Ü.; Morkoç H.; Leach J.; Paskova T.

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Leach J. H.; Wu M.; Morkoç H.; Liberis J.; Šermukšnis E.; Ramonas M.; Matulionis A.

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

Demchenko D. O.; Earles B.; Liu H. Y.; Avrutin V.; Izyumskaya N.; Özgür Ü.; Morkoç H.

Impurity complexes and conductivity of Ga-doped ZnO

Kayis C.; Ferreyra R. A.; Wu M.; Li X.; Özgür Ü.; Matulionis A.; Morkoç H.

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Šermukšnis E.; Liberis J.; Ramonas M.; Matulionis A.; Leach J. H.; Wu M.; Avrutin V.; Morkoç H.

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Kayis Cemil; Zhu C. Y.; Wu Mo; Li X.; Özgür Ümit; Morkoç Hadis

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Leach J. H.; Liu H.; Avrutin V.; Rowe E.; Özgür Ü.; Morkoç H.; Song Y.-Y.; Wu M.

Electrically and magnetically tunable phase shifters based on a barium strontium titanate-yttrium iron garnet layered structure

Cheng H.; Kurdak Ç.; Leach J. H.; Wu M.; Morkoç H.

Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure

Wu M.; Leach J. H.; Ni X.; Li X.; Xie J.; Doğan S.; Özgür Ü.; Morkoç H.; Paskova T.; Preble E.; Evans K. R.; Lu Chang-Zhi

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Ni X.; Li X.; Lee J.; Liu S.; Avrutin V.; Özgür Ü.; Morkoç H.; Matulionis A.

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Ni X.; Li X.; Lee J.; Liu S.; Avrutin V.; Özgür Ü.; Morkoç H.; Matulionis A.; Paskova T.; Mulholland G.; Evans K. R.

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Zhang S. K.; Wang W. B.; Alfano R. R.; Teke A.; He L.; Dogan S.; Johnstone D. J.; Morkoç H.

Photoionization study of deep centers in GaN/AlGaN multiple quantum wells

Leach J. H.; Liu H.; Avrutin V.; Xiao B.; Özgür Ü.; Morkoç H.; Das J.; Song Y. Y.; Patton C. E.

Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3

Leach J. H.; Ni X.; Li X.; Wu M.; Özgür Ü.; Morkoç H.; Zhou L.; Cullen D. A.; Smith D. J.; Cheng H.; Kurdak Ç.; Meyer J. R.; Vurgaftman I.

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

Leach J. H.; Zhu C. Y.; Wu M.; Ni X.; Li X.; Xie J.; Özgür Ü.; Morkoç H.; Liberis J.; Šermukšnis E.; Matulionis A.; Paskova T.; Preble E.; Evans K. R.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Leach J. H.; Evans K. R.; Wu M.; Ni X.; Li X.; Xie J.; Özgür Ü.; Morkoç H.; Paskova T.; Preble E.; Lu Chang-Zhi

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Zhou Lin; Leach Jacob H.; Ni Xianfeng; Morkoç Hadis; Smith David J.

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Leach J. H.; Zhu C. Y.; Wu M.; Ni X.; Li X.; Xie J.; Özgür Ü.; Morkoç H.; Liberis J.; Šermukšnis E.; Matulionis A.; Cheng H.; Kurdak Ç.

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Xiao Bo; Liu Hongrui; Avrutin Vitaliy; Leach Jacob H.; Rowe Emmanuel; Liu Huiyong; Özgür Ümit; Morkoç Hadis; Chang W.; Alldredge L. M. B.; Kirchoefer S. W.; Pond J. M.

Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer

Lee J.; Li X.; Ni X.; Özgür Ü.; Morkoç H.; Paskova T.; Mulholland G.; Evans K. R.

On carrier spillover in c- and m-plane InGaN light emitting diodes

Cheng H.; Biyikli N.; Xie J.; Kurdak Ç.; Morkoç H.

Energy relaxation probed by weak antilocalization measurements in GaN heterostructures

Matulionis A.; Liberis J.; Matulionienė I.; Ramonas M.; Šermukšnis E.; Leach J. H.; Wu M.; Ni X.; Li X.; Morkoç H.

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Ardaravičius L.; Ramonas M.; Liberis J.; Kiprijanovič O.; Matulionis A.; Xie J.; Wu M.; Leach J. H.; Morkoç H.

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

Li X.; Ni X.; Lee J.; Wu M.; Özgür Ü.; Morkoç H.; Paskova T.; Mulholland G.; Evans K. R.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Ni X.; Wu M.; Lee J.; Li X.; Baski A. A.; Özgür Ü.; Morkoç H.

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Ni X.; Lee J.; Wu M.; Li X.; Shimada R.; Özgür Ü.; Baski A. A.; Morkoç H.; Paskova T.; Mulholland G.; Evans K. R.

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

Xiao Bo; Avrutin Vitaliy; Liu Hongrui; Rowe Emmanuel; Leach Jacob; Gu Xing; Özgür Ümit; Morkoç Hadis; Chang W.; Alldredge L. M. B.; Kirchoefer S. W.; Pond J. M.

Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films

Moore J. C.; Kenny S. M.; Baird C. S.; Morkoç H.; Baski A. A.

Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy

Reshchikov Michael A.; Morkoç H.; Shimada R.; Izyumskaya N.; Avrutin V.; Novak S. W.

About the Cu-related green luminescence band in ZnO

Kang Tae Dong; Xiao Bo; Avrutin Vitaliy; Özgür Ümit; Morkoç Hadis; Park Jun Woo; Lee Ho Suk; Lee Hosun; Wang Xiaoyu; Smith David. J.

Large electro-optic effect in single-crystal Pb(Zr,Ti)O3 (001) measured by spectroscopic ellipsometry

Ni Xianfeng; Fan Qian; Shimada Ryoko; Özgür Ümit; Morkoç Hadis

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Xie Jinqiao; Ni Xianfeng; Fan Qian; Shimada Ryoko; Özgür Ümit; Morkoç Hadis

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Xiao Bo; Avrutin Vitaliy; Liu Huiyong; Özgür Ümit; Morkoç Hadis; Lu Changzhi

Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates

Steinke I. P.; Ruden P. P.; Ni X.; Morkoç H.; Son K.-A.

Current versus voltage characteristics of GaN/;AlGaN/;GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure

Liddar H.; Li J.; Neogi A.; Neogi P. B.; Sarkar A.; Cho S.; Morkoç H.

Self-assembled deoxyguanosine based molecular electronic device on GaN substrates

Xie J.; Leach J. H.; Ni X.; Wu M.; Shimada R.; Özgür Ü.; Morkoç H.

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

Leach J. H.; Özgür Ü.; Morkoç H.

Evolution of surface morphology of GaN thin films during photoelectrochemical etching

Xiao Bo; Gu Xing; Izyumskaya Natalia; Avrutin Vitaliy; Xie Jinqiao; Liu Huiyong; Morkoç Hadis

Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3/;PbO bridge layer

Izyumskaya N.; Avrutin V.; Gu X.; Xiao B.; Chevtchenko S.; Yoon J.-G.; Morkoç H.; Zhou Lin; Smith David J.

Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

Xie Jinqiao; Ni Xianfeng; Wu Mo; Leach Jacob H.; Özgür Ümit; Morkoç Hadis

High electron mobility in nearly lattice-matched AlInN/;AlN/;GaN heterostructure field effect transistors

Ni X.; Özgür Ü.; Morkoç H.; Liliental-Weber Z.; Everitt H. O.

Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition

Handel Peter H.; Truong Amanda M.; George Thomas F.; Morkoç Hadis

Quantum 1/f Noise, a New Aspect of Quantum Physics in Hi‐Tech Devices, Sensors, Nanostructures and Systems

Kang T. D.; Lee Hosun; Xing G.; Izumskaya N.; Avrutin V.; Xiao B.; Morkoç H.

Dielectric functions and critical points of PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 grown on SrTiO3 substrate

Gu Xing; Izyumskaya Natalia; Avrutin Vitaly; Xiao Bo; Morkoç Hadis

Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy

Xie Jinqiao; Chevtchenko Serguei A.; Özgür Ümit; Morkoç Hadis

Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situSiNx nanonetwork

Biyikli N.; Ni X.; Fu Y.; Xie J.; Morkoç H.; Cheng H.; Kurdak Ç.; Vurgaftman I.; Meyer J.

Magnetotransport properties of AlxGa1-x;N/;AlN/;GaN heterostructures grown on epitaxial lateral overgrown GaN templates

Chevtchenko S. A.; Reshchikov M. A.; Fan Q.; Ni X.; Moon Y. T.; Baski A. A.; Morkoç H.

Study of SiNx and SiO2 passivation of GaN surfaces

Ni X.; Özgür Ü.; Baski A. A.; Morkoç H.; Zhou Lin; Smith David J.; Tran C. A.

Epitaxial lateral overgrowth of (1122) semipolar GaN on (1100)m-plane sapphire by metalorganic chemical vapor deposition

Ursaki V. V.; Tiginyanu I. M.; Volciuc O.; Popa V.; Skuratov V. A.; Morkoç H.

Nanostructuring induced enhancement of radiation hardness in GaN epilayers

Xie J.; Özgür Ü.; Fu Y.; Ni X.; Morkoç H.; Inoki C. K.; Kuan T. S.; Foreman J. V.; Everitt H. O.

Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Moore J. C.; Kasliwal V.; Baski A. A.; Ni X.; Özgür Ü.; Morkoç H.

Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth

Özgür Ü.; Ni X.; Fu Y.; Morkoç H.; Everitt H. O.

Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN

Ni X.; Özgür Ü.; Fu Y.; Biyikli N.; Xie J.; Baski A. A.; Morkoç H.; Liliental-Weber Z.

Defect reduction in (1120)a-plane GaN by two-stage epitaxial lateral overgrowth

Tsen K. T.; Kiang Juliann G.; Ferry D. K.; Morkoç H.

Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1-x;As-based p-i-n semiconductor nanostructure

Biyikli N.; Özgür Ü.; Ni X.; Fu Y.; Morkoç H.; Kurdak Ç.

Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1-x;N/;AlN/;GaN heterostructures

Chevtchenko S. A.; Moore J. C.; Özgür Ü.; Gu X.; Baski A. A.; Morkoç H.; Nemeth B.; Nause J. E.

Comparative study of the (0001) and (0001) surfaces of ZnO

Alivov Ya. I.; Xiao B.; Fan Q.; Morkoç H.; Johnstone D.

Band offset measurements of ZnO/6H-;SiC heterostructure system

Xie Jinqiao; Fu Yi; Ni Xianfeng; Chevtchenko Serguei; Morkoç Hadis

I-V characteristics of Au/;Ni Schottky diodes on GaN with SiNx nanonetwork

DeCuir E. A.; Fred Emil; Passmore B. S.; Muddasani A.; Manasreh M. O.; Xie Jinqiao; Morkoç Hadis; Ware M. E.; Salamo G. J.

Near-infrared wavelength intersubband transitions in GaN/;AlN short period superlattices

Gu Xing; Izyumskaya Natalia; Avrutin Vitaly; Morkoç Hadis; Kang Tae Dong; Lee Hosun

High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source

Kurdak Ç; Biyikli N.; Özgür Ü; Morkoç H.; Litvinov V. I.

Weak antilocalization and zero-field electron spin splitting in AlxGa1-x;N/;AlN/;GaN heterostructures with a polarization-induced two-dimensional electron gas

Tsen K. T.; Kiang Juliann G.; Ferry D. K.; Morkoç H.

Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Moon Y. T.; Liu C.; Xie J.; Ni X.; Fu Y.; Morkoç H.; Zhou Lin; Smith David J.

In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN/;GaN cracks

Liu Y.; Kauser M. Z.; Schroepfer D. D.; Ruden P. P.; Xie J.; Moon Y. T.; Onojima N.; Morkoç H.; Son K.-A.; Nathan M. I.

Effect of hydrostatic pressure on the current-voltage characteristics of GaN/;AlGaN/;GaN heterostructure devices

Lee Ghil Soo; Lee Ho Suk; Kang Tae Dong; Lee Hosun; Liu C.; Xiao B.; Özgür Ü.; Morkoç H.

Spectroscopic ellipsometry and absorption study of Zn1-x;MnxO/;Al2O3(0⩽x⩽0.08); thin films

Abouzaid M.; Liu C.; Ruterana P.; Morkoç H.

Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

Fan Qian; Chevtchenko S.; Ni Xianfeng; Yun Feng; Cho Sang-Jun; Morkoç Hadis

Reactive ion etch damage on GaN and its recovery

Biyikli N.; Xie J.; Moon Y.-T.; Yun F.; Stefanita C.-G.; Bandyopadhyay S.; Morkoç H.; Vurgaftman I.; Meyer J. R.

Quantitative mobility spectrum analysis of AlGaN/;GaN heterostructures using variable-field hall measurements

Kang Youn-Seon; Fan Qian; Xiao Bo; Alivov Ya. I.; Xie Jinqiao; Onojima Norio; Cho Sang-Jun; Moon Yong-Tae; Lee Hosun; Johnstone D.; Morkoç Hadis; Park Young-Soo

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN/;GaN field effect transistor

Chevtchenko S.; Ni X.; Fan Q.; Baski A. A.; Morkoç H.

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

Yun F.; Moon Y.-T.; Fu Y.; Sagar Ashutosh; Kuan T. S.; Inoki C. K.; Morkoç H.; Ozgür Ü.; Zhu K.; Feenstra R. M.

Erratum: “Efficacy of single and double ;SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [J. Appl. Phys. ;98, 123502 (2005)]

He L.; Moon Y. T.; Xie J.; Muñoz M.; Johnstone D.; Morkoç H.

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

Fu Y.; Yun F.; Moon Y. T.; Özgür Ü.; Xie J. Q.; Ni X. F.; Biyikli N.; Morkoç H.; Zhou Lin; Smith David J.; Inoki C. K.; Kuan T. S.

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Liu Y.; Ruden P. P.; Xie J.; Morkoç H.; Son K.-A.

Effect of hydrostatic pressure on the dc characteristics of AlGaN/;GaN heterojunction field effect transistors

Yun F.; Sagar Ashutosh; Kuan T. S.; Inoki C. K.; Morkoç H.; Ozgür Ü.; Zhu K.; Fu Y.; Moon Y. -T.; Feenstra R. M.

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Lee Hosun; Snyder P. G.; Wei Su-Huai; Li Jingbo; Lee Ghil Soo; Kang Tae Dong; Morkoç Hadis; Xiao Bo; Cho Sang-Jun; Kang Youn Seon; Evans J. T.

Dielectric functions and electronic band structure of lead zirconate titanate thin films

Özgür Ü.; Alivov Ya. I.; Liu C.; Teke A.; Reshchikov M. A.; Doğan S.; Avrutin V.; Cho S.-J.; Morkoç H.

A comprehensive review of ZnO materials and devices

Yun Feng; Chevtchenko Serguei; Moon Yong-Tae; Morkoç Hadis; Fawcett Timothy J.; Wolan John T.

GaN resistive hydrogen gas sensors

Lee Hosun; Kang Youn Seon; Cho Sang-Jun; Xiao Bo; Morkoç Hadis; Kang Tae Dong

Visible-ultraviolet spectroscopic ellipsometry of lead zirconate titanate thin films

Zhu K.; Doğan S.; Moon Y. T.; Leach J.; Yun F.; Johnstone D.; Morkoç H.; Li G.; Ganguly B.

Effect of n⁺-GaN subcontact layer on 4H–SiC high-power photoconductive switch

Liu C.; Yun F.; Xiao B.; Cho S.-J.; Moon Y. T.; Morkoç H.; Abouzaid Morad; Ruterana R.; Yu K. M.; Walukiewicz W.

Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

Alivov Ya. I.; Özgür Ü.; Doğan S.; Johnstone D.; Avrutin V.; Onojima N.; Liu C.; Xie J.; Fan Q.; Morkoç H.

Photoresponse of n-ZnO/p-;SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

Özgür Ü.; Fu Y.; Moon Y. T.; Yun F.; Morkoç H.; Everitt H. O.; Park S. S.; Lee K. Y.

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Özgür Ü.; Morkoç H.; Yun F.; Moon Y. T.; Fu Y.; Everitt H. O.

Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers

Reshchikov Michael A.; Morkoç Hadis

Luminescence properties of defects in GaN

Sabuktagin S.; Doğan S.; Baski A. A.; Morkoç H.

Surface charging and current collapse in an AlGaN/;GaN heterostructure field effect transistor

Fu Y.; Moon Y. T.; Yun F.; Özgür Ü.; Xie J. Q.; Doğan S.; Morkoç H.; Inoki C. K.; Kuan T. S.; Zhou Lin; Smith David J.

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

Neogi A.; Gorman B. P.; Morkoç H.; Kawazoe T.; Ohtsu M.

Near-field optical spectroscopy and microscopy of self-assembled GaN/;AlN nanostructures

Neogi Arup; Morkoç Hadis; Kuroda Takamasa; Tackeuchi Atsushi

Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons

Teke A.; Özgür Ü.; Doğan S.; Gu X.; Morkoç H.; Nemeth B.; Nause J.; Everitt H. O.

Excitonic fine structure and recombination dynamics in single-crystalline ZnO

Johnstone D.; Doğan S.; Leach J.; Moon Y. T.; Fu Y.; Hu Y.; Morkoç H.

Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

Reshchikov M. A.; Sabuktagin S.; Johnstone D. K.; Morkoç H.

Transient photovoltage in GaN as measured by atomic force microscope tip

Doğan S.; Johnstone D.; Yun F.; Sabuktagin S.; Leach J.; Baski A. A.; Morkoç H.; Li G.; Ganguly B.

The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

Spradlin J.; Doǧan S.; Xie J.; Molnar R.; Baski A. A.; Morkoç H.

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Özgür Ü.; Teke A.; Liu C.; Cho S.-J.; Morkoç H.; Everitt H. O.

Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

Cho Sang-Jun; Doğan Seydi; Sabuktagin Shahriar; Reshchikov Michael A.; Johnstone Daniel K.; Morkoç Hadis

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

Gu Xing; Reshchikov Michael A.; Teke Ali; Johnstone Daniel; Morkoç Hadis; Nemeth Bill; Nause Jeff

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Liu Y.; Kauser M. Z.; Nathan M. I.; Ruden P. P.; Dogan S.; Morkoç H.; Park S. S.; Lee K. Y.

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Reshchikov M. A.; Park S. S.; Molnar R. J.; Liliental-Weber Z.; Jasinski J.; Morkoç H.; He L.; Visconti P.; Yun F.; Huang D.; Lee K. Y.

Unusual luminescence lines in GaN

Huang Y. S.; Pollak Fred H.; Park S. S.; Lee K. Y.; Morkoç H.

Contactless electroreflectance, in the range of 20 ;KK, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

Reshchikov M. A.; Iqbal M. Zafar; Morkoç H.; Park S. S.; Lee K. Y.

Long-lasting photoluminescence in freestanding GaN templates

Zhou Qiaoying; Chen Jiayu; Pattada B.; Manasreh M. O.; Xiu Faxian; Puntigan Steve; He L.; Ramaiah K. S.; Morkoç Hadis

Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

Özgür Ümit; Everitt Henry O.; He Lei; Morkoç Hadis

Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells

Spradlin J.; Dogan S.; Mikkelson M.; Huang D.; He L.; Johnstone D.; Morkoç H.; Molnar R. J.

Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching

Doǧan S.; Teke A.; Huang D.; Morkoç H.; Roberts C. B.; Parish J.; Ganguly B.; Smith M.; Myers R. E.; Saddow S. E.

4H–SiC photoconductive switching devices for use in high-power applications

Eckhause T. A.; Süzer Ö.; Kurdak Ç.; Yun F.; Morkoç H.

Electric-field-induced heating and energy relaxation in GaN

Duran Rolando S.; Larkins Grover L.; Van Vliet Carolyne M.; Morkoç Hadis

Generation–recombination noise in gallium nitride-based quantum well structures

Liang W.; Tsen K. T.; Sankey Otto F.; Komirenko S. M.; Kim K. W.; Kochelap V. A.; Wu Meng-Chyi; Ho Chong-Long; Ho Wen-Jeng; Morkoç H.

Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures

Pomarico A. A.; Huang D.; Dickinson J.; Baski A. A.; Cingolani R.; Morkoç H.; Molnar R.

Current mapping of GaN films by conductive atomic force microscopy

Reshchikov M. A.; Morkoç H.; Park S. S.; Lee K. Y.

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

Zhang S. K.; Wang W. B.; Shtau I.; Yun F.; He L.; Morkoç H.; Zhou X.; Tamargo M.; Alfano R. R.

Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

Zhang S. K.; Wang W. B.; Yun F.; He L.; Morkoç H.; Zhou X.; Tamargo M.; Alfano R. R.

Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells

Yun F.; Reshchikov M. A.; He L.; Morkoç H.; Inoki C. K.; Kuan T. S.

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

Huang D.; Liliental-Weber Z.; Jasinski J.; Morkoç H.; King T.; Baski A. A.; Yun F.; Visconti P.; Reshchikov M. A.; Litton C. W.

Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

Yun Feng; Reshchikov Michael A.; He Lei; King Thomas; Morkoç Hadis; Novak Steve W.; Wei Luncun

Energy band bowing parameter in AlxGa1-x;N alloys

He L.; Reshchikov M. A.; Yun F.; Huang D.; King T.; Morkoç H.

Properties of AlxGa1-x;N layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

Huang D.; Reshchikov M. A.; Yun F.; King T.; Baski A. A.; Morkoç H.

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Özgür Ümit; Webb-Wood Grady; Everitt Henry O.; Yun Feng; Morkoç Hadis

Systematic measurement of AlxGa1-x;N refractive indices

Reshchikov M. A.; Huang D.; Yun F.; He L.; Morkoç H.; Reynolds D. C.; Park S. S.; Lee K. Y.

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

Huang D.; Visconti P.; Jones K. M.; Reshchikov M. A.; Yun F.; Baski A. A.; King T.; Morkoç H.

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Reshchikov M. A.; Morkoç H.; Park S. S.; Lee K. Y.

Yellow and green luminescence in a freestanding GaN template

Reshchikov M. A.; Morkoç H.; Park S. S.; Lee K. Y.

Transient photoluminescence of defect transitions in freestanding GaN

Jones K. M.; Visconti P.; Yun F.; Baski A. A.; Morkoç H.

Investigation of inversion domains in GaN by electric-force microscopy

Jasinski J.; Swider W.; Liliental-Weber Z.; Visconti P.; Jones K. M.; Reshchikov M. A.; Yun F.; Morkoç H.; Park S. S.; Lee K. Y.

Characterization of free-standing hydride vapor phase epitaxy GaN

Fang Z.-Q.; Look D. C.; Visconti P.; Wang D.-F.; Lu C.-Z.; Yun F.; Morkoç H.; Park S. S.; Lee K. Y.

Deep centers in a free-standing GaN layer

Reshchikov M. A.; Visconti P.; Morkoç H.

Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy

Visconti P.; Jones K. M.; Reshchikov M. A.; Yun F.; Cingolani R.; Morkoç H.; Park S. S.; Lee K. Y.

Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration

Visconti P.; Jones K. M.; Reshchikov M. A.; Cingolani R.; Morkoç H.; Molnar R. J.

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Potin V.; Ruterana P.; Nouet G.; Pond R. C.; Morkoç H.

Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

Cingolani R.; Botchkarev A.; Tang H.; Morkoç H.; Traetta G.; Coli G.; Lomascolo M.; Di Carlo A.; Della Sala F.; Lugli P.

Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells: Impact on the optical spectra

Bairamov B. H.; Gürdal O.; Botchkarev A.; Morkoç H.; Irmer G.; Monecke J.

Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers

Wang Z.; Diatezua D. M.; Park D-G.; Chen Z.; Morkoç H.; Rockett A.

Plasma nitridation of thin Si layers for GaAs dielectrics

Ruterana P.; Barbaray B.; Béré A.; Vermaut P.; Hairie A.; Paumier E.; Nouet G.; Salvador A.; Botchkarev A.; Morkoç H.

Formation mechanism and relative stability of the {112¯0}; stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

Ochalski Tomasz J.; Gil Bernard; Lefebvre Pierre; Grandjean Nicolas; Leroux Mathieu; Massies Jean; Nakamura Shuji; Morkoç Hadis

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Kim Wook; Look D. C.; Fang Z.-Q.; Morkoç H.; Botchkarev A. E.; Smith David J.

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

Kim H. S.; Lin J. Y.; Jiang H. X.; Chow W. W.; Botchkarev A.; Morkoç H.

Piezoelectric effects on the optical properties of GaN/AlxGa1-x;N multiple quantum wells

Park Dae-Gyu; Wang Zhonghui; Morkoç Hadis; Alterovitz Samuel A.; Smith David J.; Tsen S.-C. Y.

Interface characterization of Si3N4/Si/GaAs heterostructures after high temperature annealing

Zeng K. C.; Mair R.; Lin J. Y.; Jiang H. X.; Chow W. W.; Botchkarev A.; Morkoç H.

Plasma heating in highly excited GaN/AlGaN multiple quantum wells

Liu Z. X.; Pau S.; Syassen K.; Kuhl J.; Kim W.; Morkoç H.; Khan M. A.; Sun C. J.

Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure

Fang Z-Q.; Look D. C.; Kim W.; Fan Z.; Botchkarev A.; Morkoç H.

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Lefebvre P.; Allègre J.; Gil B.; Kavokine A.; Mathieu H.; Kim W.; Salvador A.; Botchkarev A.; Morkoç Hadis

Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells

Mair R. A.; Zeng K. C.; Lin J. Y.; Jiang H. X.; Zhang B.; Dai L.; Botchkarev A.; Kim W.; Morkoç H.; Khan M. A.

Optical modes within III-nitride multiple quantum well microdisk cavities

Wang C. D.; Yu L. S.; Lau S. S.; Yu E. T.; Kim W.; Botchkarev A. E.; Morkoç H.

Deep level defects in n-type GaN grown by molecular beam epitaxy

Yeadon Mark; Marshall Michael T.; Hamdani Fayçal; Pekin Senol; Morkoç Hadis; Gibson J. Murray

In situ transmission electron microscopy of AlN growth by nitridation of (0001) α-;Al2O3

Hamdani F.; Yeadon M.; Smith David J.; Tang H.; Kim W.; Salvador A.; Botchkarev A. E.; Gibson J. M.; Polyakov A. Y.; Skowronski M.; Morkoç H.

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

Tsen S.-C. Y.; Smith David J.; Tsen K. T.; Kim W.; Morkoç H.

Microstructural study of Mg-doped p-type GaN: Correlation between high-resolution electron microscopy and Raman spectroscopy

Popovici Galina; Kim Wook; Botchkarev Andrei; Tang Haipeng; Morkoç Hadis; Solomon James

Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates

Hamdani F.; Botchkarev A. E.; Tang H.; Kim W.; Morkoç H.

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

Mair R. A.; Zeng K. C.; Lin J. Y.; Jiang H. X.; Zhang B.; Dai L.; Tang H.; Botchkarev A.; Kim W.; Morkoç H.

Optical properties of GaN/AlGaN multiple quantum well microdisks

Popovici G.; Xu G. Y.; Botchkarev A.; Kim W.; Tang H.; Salvador A.; Morkoç H.; Strange R.; White J. O.

Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy

Xu G. Y.; Salvador A.; Kim W.; Fan Z.; Lu C.; Tang H.; Morkoç H.; Smith G.; Estes M.; Goldenberg B.; Yang W.; Krishnankutty S.

High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

Tsen K. T.; Ferry D. K.; Botchkarev A.; Sverdlov B.; Salvador A.; Morkoç H.

Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

Zeng K. C.; Lin J. Y.; Jiang H. X.; Salvador A.; Popovici G.; Tang H.; Kim W.; Morkoç H.

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

Park Dae-Gyu; Reed J. C.; Morkoç Hadis

Minority-carrier characteristics of SiNx/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers

Cingolani R.; Coli' G.; Rinaldi R.; Calcagnile L.; Tang H.; Botchkarev A.; Kim W.; Salvador A.; Morkoç H.

Optical properties of GaN/AlxGa1-x;N quantum wells

Kim Wook; Yeadon M.; Botchkarev A. E.; Mohammad S. N.; Gibson J. M.; Morkoç H.

Surface roughness of nitrided (0001) Al2O3 and AlN epilayers grown on (0001) Al2O3 by reactive molecular beam epitaxy

Chen Z.; Mohammad S. N.; Park D.-G.; Diatezua D. M.; Morkoç H.; Chang Y. C.

Band structure and confined energy levels of the Si3N4/Si/GaAs system

Lucas Norene; Zabel Hartmut; Morkoç Hadis

Si/Δ layer in GaAs(001); Its effect on the crystal structure and roughness of the GaAs cap layer

Kim Wook; Tang H.; Popovici G.; Salvador A.; Botchkarev A. E.; Morkoç H.

On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy

Yeadon M.; Hamdani F.; Xu G. Y.; Salvador A.; Botchkarev A. E.; Gibson J. M.; Morkoç H.

Surface morphology and optical characterization of GaN grown on α-;Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

Park D.-G.; Chen Z.; Diatezua D. M.; Wang Z.; Rockett A.; Morkoç H.; Alterovitz S. A.

Thermal stability of Si3N4/Si/GaAs interfaces

Park Dae-Gyu; Mohammad S. Noor; Chen Zhi; Morkoç Hadis

Metal–insulator–semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer

Hamdani F.; Botchkarev A.; Kim W.; Morkoç H.; Yeadon M.; Gibson J. M.; Tsen S.-C. Y.; Smith David J.; Reynolds D. C.; Look D. C.; Evans K.; Litton C. W.; Mitchel W. C.; Hemenger P.

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Chen Zhi; Noor. Mohammad S.; Park Dae-Gyu; Morkoç Hadis; Chang Yia-Chung

On the inversion in GaAs metal-insulator-semiconductor heterostructures

Park Dae-Gyu; Li Ding; Tao Meng; Fan Zhifang; Botchkarev Andrei E.; Mohammad S. Noor; Morkoç Hadis

Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices

Aktas Ozgur; Fan Z. F.; Mohammad S. N.; Botchkarev A. E.; Morkoç H.

High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

Park Dae-Gyu; Diatezua Deda M.; Chen Zhi; Mohammad S. Noor; Morkoç Hadis

Characteristics of Si3N4/Si/n‐GaAs metal‐insulator‐semiconductor interfaces grown on GaAs(111)B substrate

Salvador A.; Kim W.; Aktas Ö.; Botchkarev A.; Fan Z.; Morkoç H.

Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

Suzue K.; Mohammad S. N.; Fan Z. F.; Kim W.; Aktas O.; Botchkarev A. E.; Morkoç H.

Electrical conduction in platinum–gallium nitride Schottky diodes

Gil Bernard; Hamdani Fayçal; Morkoç Hadis

Oscillator strengths for optical band‐to‐band processes in GaN epilayers

Ruvimov S.; Liliental-Weber Z.; Washburn J.; Duxstad K. J.; Haller E. E.; Fan Z.-F.; Mohammad S. N.; Kim W.; Botchkarev A. E.; Morkoç H.

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN

Mohammad S. N.; Fan Z.-F.; Salvador A.; Aktas O.; Botchkarev A. E.; Kim W.; Morkoç Hadis

Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors

Stengel Franck; Mohammad S. Noor; Morkoç Hadis

Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field‐effect transistors

Look D. C.; Reynolds D. C.; Kim W.; Aktas Ö.; Botchkarev A.; Salvador A.; Morkoç H.

Deep‐center hopping conduction in GaN

Fan Zhifang; Mohammad S. N.; Aktas Ö.; Botchkarev A. E.; Salvador A.; Morkoç Hadis

Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors

Chen Zhi; Park Dae-Gyu; Stengal Francke; Mohammad S. Noor; Morkoç Hadis

Metal‐insulator‐semiconductor structures on ;p‐type GaAs with low interface state density

Park D. G.; Tao M.; Li D.; Botchkarev A. E.; Fan Z.; Wang Z.; Mohammad S. N.; Rockett A.; Abelson J. R.; Morkoç H.; Heyd A. R.; Alterovitz S. A.

Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator–semiconductor devices

Reynolds D. C.; Morkoç H.; Salvador A.; Botchkarev A.; Aktas Ö.; Kim W.; Look D. C.; Talwar D. N.

Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy

Look D. C.; Fang Z.-Q.; Kim W.; Aktas Ö.; Botchkarev A.; Salvador A.; Morkoç H.

Thermally stimulated current trap in GaN

Tsen K. T.; Joshi R. P.; Ferry D. K.; Botchkarev A.; Sverdlov B.; Salvador A.; Morkoç H.

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Kim Wook; Aktas Ö.; Botchkarev A. E.; Salvador A.; Mohammad S. N.; Morkoç H.

Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics

Martin G.; Botchkarev A.; Rockett A.; Morkoç H.

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

Schmidt T. J.; Yang X. H.; Shan W.; Song J. J.; Salvador A.; Kim W.; Aktas Ö.; Botchkarev A.; Morkoç H.

Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

Fan Zhifang; Mohammad S. Noor; Kim Wook; Aktas Özgür; Botchkarev Andrei E.; Morkoç Hadis

Very low resistance multilayer Ohmic contact to n‐GaN

Zhu Q.; Botchkarev A.; Kim W.; Aktas Ö.; Salvador A.; Sverdlov B.; Morkoç H.; Tsen S.-C. Y.; Smith David J.

Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Chen Z.; Mohammad S. N.; Morkoç H.

Band structure of Al/Si/n‐type GaAs with a strained Si interfacial layer

Smith M.; Chen G. D.; Li J. Z.; Lin J. Y.; Jiang H. X.; Salvador A.; Kim W. K.; Aktas O.; Botchkarev A.; Morkoç H.

Excitonic recombination in GaN grown by molecular beam epitaxy

Salvador A.; Liu G.; Kim W.; Aktas Ö.; Botchkarev A.; Morkoç H.

Properties of a Si doped GaN/AlGaN single quantum well

Sverdlov B. N.; Martin G. A.; Morkoç H.; Smith David J.

Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates

Smith David J.; Chandrasekhar D.; Sverdlov B.; Botchkarev A.; Salvador A.; Morkoç H.

Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy

Grann E. D.; Tsen K. T.; Sankey O. F.; Ferry D. K.; Salvador A.; Botcharev A.; Morkoç H.

Electron velocity overshoot in a GaAs‐based ;p‐;i‐;n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

Sheih S. J.; Tsen K. T.; Ferry D. K.; Botchkarev A.; Sverdlov B.; Salvador A.; Morkoç H.

Electron–phonon interactions in the wide band‐gap semiconductor GaN

Mohammad S. N.; Morkoç H.

Base transit time of GaN/InGaN heterojunction bipolar transistors

Chen Z.; Kim W.; Salvador A.; Mohammad S. N.; Aktas O.; Morkoç H.

Schottky barriers on anodic‐sulfide‐passivated GaAs and their stability

Mohammad S. N.; Chyi J.-I.; Chen J.; Morkoç H.

Influence of nonuniform doping on the uniformity of current gain, base transit time, and related properties of AlGaAs/GaAs heterojunction bipolar transistors

Smith M.; Chen G. D.; Lin J. Y.; Jiang H. X.; Salvador A.; Sverdlov B. N.; Botchkarev A.; Morkoç H.

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Yoon H. W.; Wake D. R.; Wolfe J. P.; Salvador A.; Morkoç H.

Field‐modulated diffusivity of excitons in coupled asymmetric quantum wells

Murugkar S.; Merlin R.; Botchkarev A.; Salvador A.; Morkoç H.

Second order Raman spectroscopy of the wurtzite form of GaN

Zheng T.; Gibson J. M.; Mui D. S. L.; Morkoç H.

Optimal thickness for Si interlayer as diffusion barrier at the Si3N4/GaAs interface: A transmission electron microscopy study

Botchkarev A.; Salvador A.; Sverdlov B.; Myoung J.; Morkoç H.

Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy

Tao Meng; Botchkarev Andrei E.; Park Daegyu; Reed John; Chey S. Jay; Van Nostrand Joseph E.; Cahill David G.; Morkoç Hadis

Improved Si3N4/Si/GaAs metal‐insulator‐semiconductor interfaces by ;in situ anneal of the as‐deposited Si

Kim D. S.; Bouchalkha A.; Jacob J. M.; Song J. J.; Klem J. F.; Hou H.; Tu C. W.; Morkoç H.

Hot‐phonon generation in GaAs/Al;xGa1-;xAs superlattices; Observations and implications on the coherence length of LO phonons

Lambrecht W. R. L.; Segall B.; Strite S.; Martin G.; Agarwal A.; Morkoç H.; Rockett A.

X‐ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3;d states in GaN

Salvador A.; Sverdlov B.; Lehner T.; Botchkarev A.; Huang F.; Morkoç H.

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

Morkoç H.; Strite S.; Gao G. B.; Lin M. E.; Sverdlov B.; Burns M.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Martin G.; Strite S.; Botchkarev A.; Agarwal A.; Rockett A.; Morkoç H.; Lambrecht W. R. L.; Segall B.

Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy

Hwang S. J.; Shan W.; Hauenstein R. J.; Song J. J.; Lin M.-E.; Strite S.; Sverdlov B. N.; Morkoç H.

Photoluminescence of zinc‐blende GaN under hydrostatic pressure

Reed J.; Fan Z.; Gao G. B.; Botchkarev A.; Morkoç H.

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

Lin M. E.; Huang F. Y.; Morkoç H.

Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices

Grann E. D.; Sheih S. J.; Chia C.; Tsen K. T.; Sankey O. F.; Guncer Selim E.; Ferry D. K.; Maracas G.; Droopad Ravi; Salvador A.; Botcharev A.; Morkoç H.

Picosecond Raman studies of electric‐field‐induced nonequilibrium carrier distributions in GaAs‐based ;p‐;i‐;n nanostructure semiconductors

Lin M. E.; Ma Z.; Huang F. Y.; Fan Z. F.; Allen L. H.; Morkoç H.

Low resistance ohmic contacts on wide band‐gap GaN

Lin M. E.; Fan Z. F.; Ma Z.; Allen L. H.; Morkoç H.

Reactive ion etching of GaN using BCl3

Ma Z.; Zhou G. L.; Morkoç H.; Allen L. H.; Hsieh K. C.

Solid‐state reaction‐mediated low‐temperature bonding of GaAs and InP wafers to Si substrates

Reed J.; Gao G. B.; Bochkarev A.; Morkoç H.

Si3N4/Si/Ge/GaAs metal‐insulator‐semiconductor structures grown by ;insitu chemical vapor deposition

Huang F. Y.; Morkoç H.

GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity

Lin M. E.; Sverdlov B. N.; Morkoç H.

Thermal stability of GaN investigated by low‐temperature photoluminescence spectroscopy

Lin M. E.; Sverdlov B. N.; Morkoç H.

Growth and characterization of GaN on c‐plane (0001) sapphire substrates by plasma‐enhanced molecular beam epitaxy

Zhou G. L.; Ma Z.; Lin M. E.; Reed J.; Allen L. H.; Morkoç H.

Si/SiGe modulation‐doped structures with thin buffer layers; Effect of substrate orientation

Huang F. Y.; Li J.; Li Lie-Ming; Morkoç H.

Self‐consistent simulation of Stark shift of intersubband transition in modulation‐doped step quantum wells

Lin M. E.; Xue G.; Zhou G. L.; Greene J. E.; Morkoç H.

p‐type zinc‐blende GaN on GaAs substrates

Huang F. Y.; Salvador A.; Gui X.; Teraguchi N.; Morkoç H.

Resonant‐cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure

Lin M. E.; Sverdlov B.; Zhou G. L.; Morkoç H.

A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma‐assisted molecular‐beam epitaxy

Mui D. S. L.; Wang Z.; Biswas D.; Demirel A. L.; Teraguchi N.; Reed J.; Morkoç H.

Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability

Wang Z.; Lin M. E.; Biswas D.; Mazhari B.; Teraguchi N.; Fan Z.; Gui X.; Morkoç H.

Si3N4/Si/n‐GaAs capacitor with minimum interface density in the 10;10 eV-1; cm;-2; range

Mazhari B.; Morkoç H.

Surface recombination in GaAs PN junction diode

Tsen K. T.; Joshi R.; Morkoç H.

Direct measurements of electron‐optical photon scattering rates in ultrathin GaAs‐AlAs multiple quantum well structures

Gao G. B.; Fan Z. F.; Teraguchi N.; Shen T. C.; Morkoç H.

AlxGa1-;xAs/AlyGa1-;yAs and GaAs pseudo‐heterojunction bipolar transistors with lateral emitter resistor

Lin M. E.; Strite S.; Agarwal A.; Salvador A.; Zhou G. L.; Teraguchi N.; Rockett A.; Morkoç H.

GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

Selim Ünlü M.; Morkoç Hadis

Wavelength selective optical logic

Yoon H. W.; Wolfe J. P.; Wake D. R.; Morkoç H.

In‐plane transport of photoexcited carriers in GaAs quantum wells

Wake D. R.; Yoon H. W.; Wolfe J. P.; Morkoç H.

Response of excitonic absorption spectra to photoexcited carriers in GaAs quantum wells

Salvador A.; Teraguchi N.; Reed J.; Morkoç H.

Optical transmission of asymmetric coupled quantum wells under crossed electric and magnetic fields

Wang Z.; Mui D. S. L.; Demirel A. L.; Biswas D.; Reed J.; Morkoç H.

Gate quality Si3N4/Si/n‐In;0.53Ga0.47As metal‐insulator‐semiconductor capacitors

Shen T. C.; Gao G. B.; Morkoç H.

Recent developments in ohmic contacts for III–V compound semiconductors

Mui D. S. L.; Reed J.; Biswas D.; Morkoç H.

A new circuit model for tunneling related trapping at insulator‐semiconductor interfaces in accumulation

Gao G. B.; Fan Z. F.; Morkoç H.

Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors

Strite S.; Morkoç H.

GaN, AlN, and InN: A review

Kim D. S.; Jacob J. M.; Zhou J. F.; Song J. J.; Hou H.; Tu C. W.; Morkoç H.

Initial generation of hot LO phonons by photoexcited hot carriers in GaAs and AlxGa1-;xAs alloys studied by picosecond Raman spectroscopy

Qiang H.; Pollak Fred H.; Shum Kai; Takiguchi Y.; Alfano R. R.; Fang S. F.; Morkoç H.

Piezospectroscopy of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates

Mui D. S. L.; Biswas D.; Reed J.; Demirel A. L.; Strite S.; Morkoç H.

Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density

Ünlü M. S.; Kishino K.; Liaw H. J.; Morkoç H.

A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions

Ünlü M. S.; Demirel A. L.; Strite S.; Taşiran S.; Salvador A.; Morkoç H.

Wavelength demultiplexing optical switch

Biswas D.; Lee H.; Salvador A.; Klein M. V.; Morkoç H.

Characterization of InxGa1-;xP/GaAs grown by gas source molecular‐beam epitaxy (0.35≤;x≤0.60) by spectroscopic ellipsometry

Strite S.; Ünlü M. S.; Demirel A. L.; Mui D. S. L.; Morkoç H.

A collector design study for GaAs/Ge/GaAs double heterojunction bipolar transistors

Demirel A. L.; Strite S.; Agarwal A.; Ünlü M. S.; Morkoç H.; Rockett A.

Reduction of outdiffusion at the Ge/GaAs (100) interface by low temperature growth

Levi D. H.; Wake D. R.; Klein M. V.; Kumar S.; Morkoç H.

Density dependence of nonresonant tunneling in asymmetric coupled quantum wells

Huang F. Y.; Morkoç H.

Electric‐field effect on the minigap state in semiconductor superlattices

Strite S.; Ruan J.; Li Z.; Manning N.; Salvador A.; Chen H.; Smith David J.; Choyke W. J.; Morkoç H.

Erratum: An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy [J. Vac. Sci. Technol. B ;9, 1924 (1991)]

Huang F. Y.; Morkoç H.

Electronic surface state (Tamm state) under electric field in semiconductor superlattices

Mui D. S. L.; Liaw H.; Demirel A. L.; Strite S.; Morkoç H.

Electrical characteristics of Si3N4/Si/GaAs metal‐insulator‐semiconductor capacitor

Tsen K. T.; Wald Keith R.; Ruf Tobias; Yu Peter Y.; Morkoç H.

Electron–optical‐phonon interactions in ultrathin GaAs/AlAs multiple quantum wells

Shen T. C.; Fan Z. F.; Gao G. B.; Morkoç H.; Rockett A.

Molecular‐beam‐epitaxy‐deposited nonalloyed Al contacts to ;n‐type and ;p‐type InGaAs

Mazhari B.; Morkoç H.

Effect of collector‐base valence‐band discontinuity on Kirk effect in double‐heterojunction bipolar transistors

Delaney M. E.; McGlinn T. C.; Klein M. V.; Morkoç H.

Resonant‐Raman‐scattering study of disorder effects in Al;xGa1-;xAs alloys

Mui D. S. L.; Fang S. F.; Morkoç H.

Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane

Strite S.; Ruan J.; Choyke W. J.; Smith David J.; Chen H.; Salvador A.; Li Z.; Morkoç H.

An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy

Gao Guang-bo; Fan Zhi-fang; Morkoç H.

Analysis of cut‐off frequency roll‐off at high currents in SiGe double‐heterojunction bipolar transistors

Martin G.; Strite S.; Thornton J.; Morkoç H.

Electrical properties of GaAs/GaN/GaAs semiconductor‐insulator‐semiconductor structures

Specht E. D.; Moret R.; Zhu X.-M.; Lucas N.; Sparks C. J.; Peters C. J.; Ice G. E.; Morkoç H.

X‐ray‐diffraction measurement of interface structure in GaAs/Si(001)

Fang S. F.; Salvador A.; Morkoç H.

Growth of gallium arsenide on hydrogen passivated Si with low‐temperature treatment (∼600 °C)

Mui D. S. L.; Evans K. R.; Fang S. F.; Biswas D.; Morkoç H.

Use of methane in an electron cyclotron resonance plasma source for carbon delta‐doping in GaAs molecular beam epitaxy

Gao Guang-bo; Fan Zhi-fang; Blackburn D. L.; Ünlü M. S.; Chen J.; Adomi K.; Morkoç H.

Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates

Costa J. C.; Williamson F.; Miller T. J.; Beyzavi K.; Nathan M. I.; Mui D. S. L.; Strite S.; Morkoç H.

Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

Mohammad S. Noor; Chen J.; Chyi J.-I.; Morkoç H.

Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors

Salvador A.; Adomi K.; Kishino K.; Ünlü M. S.; Morkoç H.

GaAs multiple‐quantum‐well reflector modulators with 4;1 contrast ratios on Si

Adomi K.; Strite S.; Morkoç H.; Nakamura Y.; Otsuka N.

Characterization of GaAs grown on Si epitaxial layers on GaAs substrates

van Rheenen Arthur D.; Bosman Gijs; Morkoç Hadis

High frequency noise and the diffusion coefficient of an AlGaAs/GaAs heterostructure device with a square potential well

Tsen K. T.; Sankey O. F.; Morkoç H.

Transport properties of excitons in GaAs quantum wells-time‐resolved Raman probe

Fang S. F.; Adomi K.; Iyer S.; Morkoç H.; Zabel H.; Choi C.; Otsuka N.

Gallium arsenide and other compound semiconductors on silicon

Huang Daming; Chyi Jen-Inn; Morkoç Hadis

Carrier effects on the excitonic absorption in GaAs quantum‐well structures; Phase‐space filling

Strite S.; Ünlü M. S.; Adomi K.; Gao G.-B.; Agarwal A.; Rockett A.; Morkoç H.; Li D.; Nakamura Y.; Otsuka N.

GaAs/Ge/GaAs heterostructures by molecular beam epitaxy

Ünlü M. S.; Kishino K.; Chyi J-I.; Arsenault L.; Reed J.; Mohammad S. Noor; Morkoç H.

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

Mui D. S. L.; Salvador A.; Strite S.; Morkoç H.

Effect of thin Ge layer on the surface depletion in GaAs

Mohammad S. Noor; Chen J.; Chyi J-I.; Morkoç H.

Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

Shum Kai; Takiguchi Y.; Mohaidat J. M.; Liu Feng; Alfano R. R.; Morkoç H.

Picosecond hole dynamics in GaAs grown on silicon

Strite S.; Ünlü M. S.; Adomi K.; Morkoç H.

Si as a diffusion barrier for Ge/GaAs heterojunctions

Mohammad S. Noor; Chen J.; Chyi J.-I.; Morkoç H.

Suppression of emitter size effect on the current‐voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

Ünlü M. S.; Strite S.; Gao G. B.; Adomi K.; Morkoç H.

Electrical characteristics of p+‐Ge/(;N‐GaAs and ;N‐AlGaAs) junctions and their applications to Ge base transistors

Strite S.; Biswas D.; Adomi K.; Morkoç H.

Study of sublattice orientation of GaAs on Ge

Adomi K.; Strite S.; Morkoç H.

Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

Ou H.-J.; Cowley J. M.; Chyi J. I.; Salvador A.; Morkoç H.

Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs‐GaAs multiple‐quantum‐well structures

Strite S.; Biswas D.; Kumar N. S.; Fradkin M.; Morkoç H.

Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures

Eng L. E.; Chen T. R.; Sanders S.; Zhuang Y. H.; Zhao B.; Yariv A.; Morkoç H.

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy

Mui D. S. L.; Patil M. B.; Morkoç H.

Calculation of the electron wave function in a graded‐channel double‐heterojunction modulation‐doped field‐effect transistor

Reddy U. K.; Ji G.; Henderson T.; Huang D.; Houdré R.; Morkoç H.; Litton Cole W.

Interband transitions in InxGa1-;x As/GaAs strained layer superlattices

Kumar N. S.; Chyi J.-I.; Peng C. K.; Morkoç H.

GaAs metal‐semiconductor field‐effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice

Chyi J.-I.; Chen J.; Kumar N. S.; Kiely C.; Peng C. K.; Rockett A.; Morkoç H.

Low‐resistance nonalloyed ohmic contacts on ;p‐type GaAs using GaSb/GaAs strained‐layer superlattices

Chen J.; Gao G. B.; Huang D.; Chyi J. I.; Ünlü M. S.; Morkoç H.

Photon emission from avalanche breakdown in the collector junction of GaAs/AlGaAs heterojunction bipolar transistors

Huang D.; Mui D.; Morkoç H.

Interference effects probed by photoreflectance spectroscopy

Gant T. A.; Delaney M.; Klein M. V.; Houdré R.; Morkoç H.

Erratum: Resonant Raman studies of confined LO modes and interface modes in a small‐period GaAs/AlAs superlattice [Phys. Rev. B ;39, 1696 (1989)]

Grober Robert D.; Drew H. D.; Chyi Jen-Inn; Kalem S.; Morkoç H.

Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Yu P. W.; Peng C. K.; Morkoç H.

Photoluminescence from carriers confined at a GaxIn1-;xAs‐InP single heterojunction interface

Ou H.-J.; Tsen S.-C. Y.; Tsen K. T.; Cowley J. M.; Chyi J. I.; Salvador A.; Morkoç H.

Determination of the local Al concentration in AlxGa1-;xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

Hoenk Michael E.; Chen Howard Z.; Yariv Amnon; Morkoç Hadis; Vahala Kerry J.

Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1-;xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate

Agarwala S.; Won T.; Morkoç H.

AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy

Yu P. W.; Peng C. K.; Morkoç H.

Quasi‐donor‐acceptor pair photoluminescence emission in Ga;xIn1-;xAs/InP

Chyi J.-I.; Biswas D.; Iyer S. V.; Kumar N. S.; Morkoç H.; Bean R.; Zanio K.; Lee H.-Y.; Chen Haydn

Molecular beam epitaxial growth and characterization of InSb on Si

Won T.; Agarwala S.; Morkoç H.

An In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs substrate by molecular‐beam epitaxy

Chyi J.-I.; Grober R.; Zanio K.; Bean R.; Morkoç H.; Kumar N. S.; Iyer S. V.; Biswas D.; Drew D.

Molecular‐beam epitaxial growth and characterization of InSb on Si

Xiong Fulin; Tombrello T. A.; Wang H.; Chen T. R.; Chen H. Z.; Morkoç H.; Yariv A.

High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

Sela I.; Beserman R.; Morkoç H.

Resonance Raman scattering induced by interface roughness in a short‐period GaAs/Ga;1-;xAlxAs superlattice

Ji G.; Dobbelaere W.; Huang D.; Morkoç H.

Optical transitions involving unconfined energy states in InxGa1-;xAs/GaAs multiple quantum wells

Smith L. M.; Preston J. S.; Wolfe J. P.; Wake D. R.; Klem J.; Henderson T.; Morkoç H.

Phonon‐wind‐driven transport of photoexcited carriers in a semiconductor quantum well

Gridin V. V.; Beserman R.; Morkoç H.

Correspondence between the dependence of frequencies and intensities of GaAs and AlAs longitudinal‐optical modes on the photon energy in a thin‐layer GaAs‐AlAs superlattice

Gant T. A.; Delaney M.; Klein M. V.; Houdré R.; Morkoç H.

Resonant Raman studies of confined LO modes and interface modes in a small‐period GaAs/AlAs superlattice

Huang D.; Agarwala S.; Morkoç H.

Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy

Peterson M. W.; Turner J. A.; Parsons C. A.; Nozik A. J.; Arent D. J.; Van Hoof C.; Borghs G.; Houdré R.; Morkoç H.

Miniband dispersion in GaAs/AlxGa1-;xAs superlattices with wide wells and very thin barriers

Patil M. B.; Mui D.; Kalem S.; Morkoç H.

Reduced backgating effect in modulation‐doped field‐effect transistors by ;p‐;n junction isolation

Won T.; Agarwala S.; Morkoç H.

In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy

Ji G.; Agarwala S.; Huang D.; Chyi J.; Morkoç H.

Band lineup in GaAs1-;xSbx/GaAs strained‐layer multiple quantum wells grown by molecular‐beam epitaxy

Peng C. K.; Chen J.; Morkoç H.

Contact regrowth technique for low‐resistance nonalloyed contacts to the hot‐electron transistor

Kalem Seref; Chyi Jen-Inn; Morkoç Hadis; Bean Ross; Zanio Ken

Growth and transport properties of InAs epilayers on GaAs

Chyi J.-I.; Kalem S.; Kumar N. S.; Litton C. W.; Morkoç H.

Growth of InSb and InAs1-;xSbx on GaAs by molecular beam epitaxy

Smith L. M.; Wake D. R.; Wolfe J. P.; Levi D.; Klein M. V.; Klem J.; Henderson T.; Morkoç H.

Picosecond imaging of photoexcited carriers in quantum wells: Anomalous lateral confinement at high densities

Tsen K. T.; Morkoç H.

Subpicosecond time‐resolved Raman spectroscopy of LO phonons in GaAs‐Al;xGa1-;xAs multiple‐quantum‐well structures

Neumann D. A.; Zabel H.; Morkoç H.

Terracing in strained‐layer superlattices

Peng C. K.; Ji G.; Kumar N. S.; Morkoç H.

Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained‐layer superlattices

Kalem Ş.; Chyi J.; Litton C. W.; Morkoç H.; Kan S. C.; Yariv A.

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Agarwala S.; Patil M. B.; Peng C. K.; Morkoç H.

Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate

Radhakrishnan G.; Liu J.; Grunthaner F.; Katz J.; Morkoç H.; Mazur J.

Growth of (111) GaAs on (111) Si using molecular‐beam epitaxy

Huang D.; Chu H. Y.; Chang Y. C.; Houdré R.; Morkoç H.

Excitonic absorption in modulation‐doped GaAs/Al;xGa1-;xAs quantum wells

Dobbelaere W.; Huang D.; Ünlü M. S.; Morkoç H.

AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates

Peng C. K.; Chen J.; Chyi J.; Morkoç H.

Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular‐beam epitaxy

Kan S. C.; Morkoç H.; Yariv A.

GaAs/AlAs double‐barrier resonant tunneling structure on Si with large peak to valley ratio at room temperature

Lucas N.; Zabel H.; Morkoç H.; Unlu H.

Anisotropy of thermal expansion of GaAs on Si(001)

Huang D.; Chyi J.; Klem J.; Morkoç Hadis

Optical properties of molecular beam epitaxially grown GaAs1-;xSbx (0<;x<0.5) on GaAs and InP substrates

Huang D.; Ji G.; Reddy U. K.; Morkoç H.; Xiong F.; Tombrello T. A.

Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1-;x As grown by molecular‐beam epitaxy

Gridin V. V.; Beserman R.; Morkoç H.

Energy dependence of the electron‐phonon coupling in a thin‐layer GaAs/AlAs superlattice

Shum Kai; Junnarkar M. R.; Chao H. S.; Alfano R. R.; Morkoç H.

Effects of nonequilibrium phonons on the energy relaxation and recombination lifetime of photogenerated carriers in undoped GaAs quantum wells

Paslaski J.; Chen H. Z.; Morkoç H.; Yariv A.

High‐speed GaAs ;p‐;i‐;n photodiodes grown on Si substrates by molecular beam epitaxy

Tsen K. T.; Morkoç H.

Picosecond Raman studies of the optical phonons in the AlxGa1-;xAs layers of GaAs‐Al;xGa1-;xAs multiple‐quantum‐well structures

Reynolds D. C.; Bajaj K. K.; Peters G.; Leak C.; Theis W. M.; Yu P. W.; Morkoç H.

Correlation between the light‐ and heavy‐hole free‐exciton fine structure in Al;xGa1-;xAs‐GaAs multiple‐quantum‐well structures using photoluminescence excitation spectroscopy

Sela I.; Gridin V. V.; Beserman R.; Morkoç H.

Resonant Raman study of the LO‐phonon energy fluctuation in III‐V alloy semiconductors

Chen J.; Won T.; Ünlü M. S.; Morkoç H.; Verret D.

GaAs‐Si heterojunction bipolar transistor

Xiong Fulin; Tombrello T. A.; Chen H. Z.; Morkoç H.; Yariv A.

Direct determination of Al content in molecular‐beam epitaxially grown Al;xGa1-;xAs (0≤;x≤1) by nuclear resonant reaction analysis and x‐ray rocking curve techniques

Ihm Y. E.; Otsuka N.; Hirotsu Y.; Klem J.; Morkoç H.

Summary Abstract: Ordering in GaAs0.5Sb0.5 grown by molecular‐beam epitaxy

Derry P. L.; Chen H. Z.; Morkoç H.; Yariv A.; Lau K. Y.; Bar-Chaim N.; Lee K.; Rosenberg J.

Ultralow threshold graded‐index separate‐confinement heterostructure single quantum well (Al,Ga)As lasers

Chen H. Z.; Paslaski J.; Yariv A.; Morkoç H.

High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy

Won T.; Morkoç H.

High‐speed performance of InP/In;0.53Ga0.47As/InP double‐heterojunction bipolar transistors

Sela I.; Gridin V. V.; Beserman R.; Sarfaty R.; Fekete D.; Morkoç H.

Distribution of atoms in mixed III‐V compounds

Chen H. Z.; Ghaffari A.; Morkoç H.; Yariv A.

Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities

Reddy U. K.; Houdré R.; Munns G.; Ji G.; Morkoç H.; Longerbone M.; Davis L.; Gu B. P.; Otsuka N.

Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy

Ihm Yeong-Eon; Otsuka N.; Klem J.; Morkoç H.

Ordering in GaAs1-;xSbx grown by molecular beam epitaxy

Unlu M. S.; Munns G.; Chen J.; Won T.; Unlu H.; Morkoç H.; Radhakrishnan G.; Katz J.; Verret D.

Characteristics of annealed p/n junctions between GaAs and Si (100)

Won T.; Munns G.; Houdré R.; Morkoç H.

Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett. ;49, 1257 (1986)]

Levi D.; Zhang Shu-Lin; Klein M. V.; Klem J.; Morkoç H.

Raman study of the effects of annealing on folded LA and confined LO phonons in GaAs‐AlAs superlattices

Won T.; Munns G.; Unlu M. S.; Unlu H.; Chyi J.; Morkoç H.

Characteristics of p‐GaAs/;n‐Si heterojunctions grown by molecular‐beam epitaxy

Chen H. Z.; Ghaffari A.; Wang H.; Morkoç H.; Yariv A.

Low‐threshold (∼600 A/cm;2 at room temperature) GaAs/AlGaAs lasers on Si (100)

Chen J.; Reddy U. K.; Mui D.; Peng C. K.; Morkoç H.

Enhanced ballistic transport in InGaAs/InAlAs hot‐electron transistors

Ji G.; Huang D.; Reddy U. K.; Henderson T. S.; Houdré R.; Morkoç H.

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

Chen H. Z.; Ghaffari A.; Wang H.; Morkoç H.; Yariv A.

Continuous‐wave operation of extremely low‐threshold GaAs/AlGaAs broad‐area injection laser on (110) Si substrate at room temperature

Peng C. K.; Sinha S.; Morkoç H.

Characterization of graded interface InxGa1-;xAs/In0.52Al0.48As (0.53<;x<0.70) structures grown by molecular‐beam epitaxy

Chen H. Z.; Wang H.; Ghaffari A.; Morkoç H.; Yariv A.

Measurement of Au/GaAs/AlxGa1-;xAs hetero‐Schottky barrier height and GaAs/Al;xGa1-;xAs conduction‐band discontinuity

Ji G.; Huang D.; Reddy U. K.; Unlu H.; Henderson T. S.; Morkoç H.

Determination of band offsets in AlGaAs/GaAs and InGaAs/GaAs multiple quantum wells

Gourley P. L.; Longerbone M.; Zhang S. L.; Morkoç H.

Photoluminescence microscopy of epitaxial GaAs on Si

Oberli D. Y.; Wake D. R.; Klein M. V.; Klem J.; Henderson T.; Morkoç H.

Time‐resolved Raman scattering in GaAs quantum wells

Reddy U. K.; Ji G.; Henderson T.; Morkoç H.; Schulman J. N.

Investigation of GaAs/(Al,Ga)As multiple quantum wells by photoreflectance

Yu P. W.; Sanders G. D.; Reynolds D. C.; Bajaj K. K.; Litton C. W.; Klem J.; Huang D.; Morkoç H.

Determination of transition energies and oscillator strengths in GaAs‐Al;xGa1-;xAs multiple quantum wells using photovoltage‐induced photocurrent spectroscopy

Reddy U. K.; Ji G.; Huang D.; Munns G.; Morkoç H.

Investigation of GaAs/AlxGa1-;xAs and InyGa1-;yAs/GaAs superlattices on Si substrates

Hurley D. C.; Tamura S.; Wolfe J. P.; Morkoç H.

Imaging of acoustic phonon stop bands in superlattices

Morkoç H.; Chen J.; Reddy U. K.; Henderson T.; Luryi S.

Response to ‘‘Comment on ‘Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well’ ’’ [Appl. Phys. Lett. ;50, 1610 (1987)]

Klem J.; Huang D.; Morkoç H.; Ihm Y. E.; Otsuka N.

Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs;0.5Sb0.5 on InP

Song J. J.; Brown J. M.; Yoon Y. S.; Jung P. S.; Fedotowsky A.; Schulman J. N.; Tu C. W.; Huang D.; Morkoç H.

Above barrier doublets in GaAs/AlxGa1-;xAs superlattices

Arora Vijay K.; Mui David S. L.; Morkoç Hadis

High‐field electron‐drift velocity and temperature in gallium phosphide

Arora Vijay K.; Mui David S. L.; Morkoç H.

Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype

Choi C.; Otsuka N.; Munns G.; Houdre R.; Morkoç H.; Zhang S. L.; Levi D.; Klein M. V.

Effect of insitu and exsitu annealing on dislocations in GaAs on Si substrates

Neumann D. A.; Zabel H.; Fischer R.; Morkoç H.

Structural properties of GaAs on (001) oriented Si and Ge substrates

Nozik A. J.; Thacker B. R.; Turner J. A.; Klem J.; Morkoç H.

Photocurrent spectroscopy of lattice‐matched superlattice electrodes in photoelectrochemical cells

Gering J. M.; Crim D. A.; Morgan D. G.; Coleman P. D.; Kopp W.; Morkoç H.

A small‐signal equivalent‐circuit model for GaAs‐Al;xGa1-;xAs resonant tunneling heterostructures at microwave frequencies

Aksun M. I.; Morkoç H.; Lester L. F.; Duh K. H. G.; Smith P. M.; Chao P. C.; Longerbone M.; Erickson L. P.

Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates

Won T.; Munns G.; Houdré R.; Morkoç H.

Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

Reynolds D. C.; Bajaj K. K.; Litton C. W.; Peters G.; Yu P. W.; Fischer R.; Huang D.; Morkoç H.

Lifetimes, ionization energies, and discussion of the emission lines in the 1.5040–1.5110‐eV range in GaAs

Sela I.; Beserman R.; Morkoç H.

Defects created in ion‐implanted Ga;1-;xAlxAs alloys

Hulin D.; Mysyrowicz A.; Antonetti A.; Migus A.; Masselink W. T.; Morkoç H.; Gibbs H. M.; Peyghambarian N.

Ultrafast all‐optical gate with subpicosecond ;ON and OFF response time

Wennberg A. K. M.; Ytterboe S. N.; Gould C. M.; Bozler H. M.; Klem J.; Morkoç H.

Electron heating in a multiple‐quantum‐well structure below 1 K

Valk B.; Salour M. M.; Munns G.; Morkoç H.

Optically pumped mode‐locked multiple quantum well laser

Reynolds D. C.; Bajaj K. K.; Litton C. W.; Yu P. W.; Huang D.; Klem J.; Morkoç H.

Magnetic and strain field splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs

Naganuma M.; Song J. J.; Kim Y. B.; Masselink W. T.; Morkoç H.; Vreeland T.

High‐spectral‐resolution pulsed photoluminescence study of molecular‐beam‐epitaxy‐grown GaAs/Al;xGa1-;xAs multi‐quantum‐well structures using a very‐low‐power tunable pulsed dye laser

Peng C. K.; Ketterson A.; Morkoç H.; Solomon P. M.

Determination of the conduction‐band discontinuity between In;0.53Ga0.47As/In0.52Al0.48As using n+‐InGaAs/InAlAs/;n-;‐InGaAs capacitors

Fischer R.; Morkoç H.; Neumann D. A.; Zabel H.; Choi C.; Otsuka N.; Longerbone M.; Erickson L. P.

Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

Otsuka N.; Choi C.; Nakamura Y.; Nagakura S.; Fischer R.; Peng C. K.; Morkoç H.

High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

Valk B.; Call T. S.; Salour M. M.; Kopp W.; Morkoç H.

Optically pumped tunable mode‐locked Si‐doped GaAs laser

Morkoç H.; Chen J.; Reddy U. K.; Henderson T.; Luryi S.

Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well

Otsuka N.; Nakamura Y.; Morkoç H.; Peng C. K.; Fischer R.; Gunshor R. L.; Kolodziejski L. A.; Choi C.; Nagakura S.

Study of heteroepitaxial interfaces by atomic resolution electron microscopy

Reddy U. K.; Chen J.; Peng C. K.; Morkoç H.

InGaAs/InAlAs hot‐electron transistor

Mysyrowicz A.; Hulin D.; Antonetti A.; Migus A.; Masselink W. T.; Morkoç H.

‘‘Dressed excitons’’ in a multiple‐quantum‐well structure; Evidence for an optical Stark effect with femtosecond response time

Pearah P. J.; Klem J.; Henderson T.; Peng C. K.; Morkoç H.; Reynolds D. C.; Litton C. W.

Optical reflectance in GaAs/AlGaAs quantum wells

Fischer R.; Kopp W.; Morkoç H.; Pion M.; Specht A.; Burkhart G.; Appelman H.; McGougan D.; Rice R.

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Chand N.; Klem J.; Henderson T.; Morkoç H.

Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy; Its effect on the device electrical characteristics

Fischer R.; Neuman D.; Zabel H.; Morkoç H.; Choi C.; Otsuka N.

Dislocation reduction in epitaxial GaAs on Si(100)

Henderson T.; Klem J.; Peng C. K.; Gedymin J. S.; Kopp W.; Morkoç H.

dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation‐doped field‐effect transistor

Rockett A.; Klem J.; Barnett S. A.; Greene J. E.; Morkoç H.

Si incorporation probabilities and depth distributions in Ga1-;xAlxAs films grown by molecular‐beam epitaxy

Reynolds D. C.; Bajaj K. K.; Litton C. W.; Yu P. W.; Klem J.; Peng C. K.; Morkoç H.; Singh Jasprit

Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy

Hulin D.; Mysyrowicz A.; Antonetti A.; Migus A.; Masselink W. T.; Morkoç H.; Gibbs H. M.; Peyghambarian N.

Well‐size dependence of exciton blue shift in GaAs multiple‐quantum‐well structures

Neumann D. A.; Peng C. K.; Klem J.; Masselink W. T.; Fischer R.; Henderson T.; Zabel H.; Zhu Xiaomei; Morkoç H.

Structural properties of GaAs on Si and Ge substrates

Chand N.; Fischer R.; Klem J.; Morkoç H.

Current–voltage characteristics of ;n‐AlGaAs/;p‐GaAs heterojunction diodes

Yu P. W.; Henderson T.; Peng C. K.; Singh Jasprit; Litton C. W.; Bajaj K. K.; Reynolds D. C.; Morkoç H.

Summary Abstract: A comparative study of photovoltaic and photoluminescence spectra of undoped GaAs–Al;0.25Ga0.75As multiple quantum well structures grown by molecular beam epitaxy

Naganuma M.; Song J. J.; Chao C. H.; Kim Y. B.; Masselink W. T.; Morkoç H.

Optical characterization of molecular beam epitaxial GaAs/AlxGa1-;xAs multi‐quantum‐well structures using a very low power, narrow band, tunable pulsed dye laser

Norris George B.; Look D. C.; Kopp W.; Klem J.; Morkoç H.

Summary Abstract: Theoretical and experimental capacitance–voltage behavior of modulation‐doped Al;0.3Ga0.7As/GaAs heterojunctions

Pearah P. J.; Masselink W. T.; Henderson T.; Peng C. K.; Morkoç H.; Sanders G. D.; Chang Yia-Chung

Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy

Reynolds D. C.; Litton C. W.; Bajaj K. K.; Yu P. W.; Singh Jasprit; Pearah P. J.; Masselink W. T.; Henderson T.; Klem J.; Morkoç H.

Summary Abstract: Optical properties of AlxGa1-;xAs grown by molecular beam epitaxy

Rockett A.; Klem J.; Barnett S. A.; Greene J. E.; Morkoç H.

Summary Abstract: Si incorporation and segregation in Ga1-;xAlxAs(100) films grown by molecular beam epitaxy

Chand N.; Klem J.; Morkoç H.

Pnp GaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors

Coleman Paul D.; Goedeke Steven; Shewchuk Thomas J.; Chapin Peter C.; Gering Joseph M.; Morkoç Hadis

Experimental study of the frequency limits of a resonant tunneling oscillator

Chand Naresh; Fischer Russ; Henderson Tim; Morkoç Hadis; Neugroschel Arnost

Measurement of the minority‐carrier lifetime and injection efficiency in AlGaAs/GaAs heterojunction bipolar transistors

Masselink W. T.; Pearah P. J.; Klem J.; Peng C. K.; Morkoç H.; Sanders G. D.; Chang Yia-Chung

Absorption coefficients and exciton oscillator strengths in AlGaAs‐GaAs superlattices

Shewchuk T. J.; Gering J. M.; Chapin P. C.; Coleman P. D.; Kopp W.; Peng C. K.; Morkoç H.

Stable and unstable current‐voltage measurements of a resonant tunneling heterostructure oscillator

Fischer R.; Henderson T.; Klem J.; Kopp W.; Peng C. K.; Morkoç H.; Detry J.; Blackstone S. C.

Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors and ;N‐metal‐oxide‐semiconductor silicon circuits

Masselink W. T.; Chang Yia-Chung; Morkoç H.

Acceptor spectra of AlxGa1-;xAs‐GaAs quantum wells in external fields; Electric, magnetic, and uniaxial stress

Klem J.; Peng C. K.; Henderson T.; Morkoç H.; Otsuka N.; Choi C.; Yu P. W.

GaAs/GaAs1-;ySby strained‐layer superlattices grown by molecular beam epitaxy

Pearah P. J.; Masselink W. T.; Klem J.; Henderson T.; Morkoç H.; Litton C. W.; Reynolds D. C.

Low‐temperature optical absorption in Al;xGa1-;xAs grown by molecular‐beam epitaxy

Reynolds D. C.; Bajaj K. K.; Litton C. W.; Singh Jasprit; Yu P. W.; Henderson T.; Pearah P.; Morkoç H.

Low‐temperature photoluminescence in Al;xGa1-;xAs grown by molecular beam epitaxy

Norris George B.; Look D. C.; Kopp W.; Klem J.; Morkoç H.

Theoretical and experimental capacitance‐voltage behavior of Al;0.3Ga0.7As/GaAs modulation‐doped heterojunctions; Relation of conduction‐band discontinuity to donor energy

Fischer R.; Chand N.; Kopp W.; Morkoç H.; Erickson L. P.; Youngman R.

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

Chand Naresh; Fischer Russ; Morkoç Hadis

Collector‐emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors

Look D. C.; Norris George B.; Kopp W.; Henderson T.; Morkoç H.

Magnetoresistance method to determine GaAs and AlxGa1-;xAs mobilities in AlxGa1-;xAs/GaAs modulation‐doped field‐effect transistor structures

Pearah P. J.; Klem J.; Peng C. K.; Henderson T.; Masselink W. T.; Morkoç H.; Reynolds D. C.

Optical transitions and acceptor binding energies in GaAs/AlxGa1-;xAs single quantum well heterostructures grown by molecular beam epitaxy

Singh Jasprit; Bajaj K. K.; Reynolds D. C.; Litton C. W.; Yu P. W.; Masselink W. T.; Fischer R.; Morkoç H.

Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high‐resolution photoluminescence spectroscopy

Fischer R.; Masselink W. T.; Klem J.; Henderson T.; McGlinn T. C.; Klein M. V.; Morkoç H.; Mazur J. H.; Washburn J.

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

Arnold D.; Ketterson A.; Henderson T.; Klem J.; Morkoç H.

Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity

Hickmott T. W.; Solomon P. M.; Fischer R.; Morkoç H.

Negative charge, barrier heights, and the conduction‐band discontinuity in Al;xGa1-;xAs capacitors

Venkateswaran Umadevi; Chandrasekhar Meera; Chandrasekhar H. R.; Wolfram T.; Fischer R.; Masselink W. T.; Morkoç H.

Photoluminescence studies of a GaAs‐Ga;1-;xAlxAs superlattice at 8–;300 K under hydrostatic pressure (0–;70 kbar)

Ketterson A.; Ponse F.; Henderson T.; Klem J.; Morkoç H.

Extremely low contact resistances for AlGaAs/GaAs modulation‐doped field‐effect transistor structures

Mooney P. M.; Fischer R.; Morkoç H.

Transient capacitance study of electron traps in AlGaAs grown with As2

Arnold D.; Klem J.; Henderson T.; Ponse F.; Morkoç H.

Summary Abstract: Backgating in modulation doped (Al,Ga)As/GaAs FET’s

Norris George B.; Look D. C.; Kopp W.; Klem J.; Morkoç H.

Summary Abstract: Capacitance–voltage characteristics in modulation doped heterojunction FETs

Reynolds D. C.; Bajaj K. K.; Litton C. W.; Yu P. W.; Masselink W. T.; Fischer R.; Morkoç H.

Summary Abstract: Optical characterization of interfaces in MBE grown GaAs–GaAlAs multiquantum‐well structures

Chand N.; Fischer R.; Klem J.; Henderson T.; Pearah P.; Masselink W. T.; Chang Y. C.; Morkoç H.

Beryllium and silicon doping studies in AlxGa1-;xAs and new results on persistent photoconductivity

Yu P. W.; Reynolds D. C.; Bajaj K. K.; Litton C. W.; Masselink W. T.; Fischer R.; Morkoç H.

Effect of electric field on the sharp photoluminescence spectra of undoped GaAs–Al;0.25Ga0.75As multiple quantum well structures

Masselink W. T.; Fischer R.; Klem J.; Henderson T.; Morkoç H.

GaAs/AlGaAs multiquantum wells grown on nonpolar semiconductor substrates

Erickson L. P.; Carpenter G. L.; Seibel D. D.; Palmberg P. W.; Pearah P.; Kopp W.; Morkoç H.

Summary Abstract: MBE film growth by direct free substrate heating

Shewchuk T. J.; Chapin P. C.; Coleman P. D.; Kopp W.; Fischer R.; Morkoç H.

Resonant tunneling oscillations in a GaAs‐Al;xGa1-;xAs heterostructure at room temperature

Chand Naresh; Henderson Tim; Fischer Russ; Kopp William; Morkoç Hadis; Giacoletto Lawrence J.

A pnp AlGaAs/GaAs heterojunction bipolar transistor

Kash J. A.; Mendez E. E.; Morkoç H.

Electric field induced decrease of photoluminescence lifetime in GaAs quantum wells

Reynolds D. C.; Bajaj K. K.; Litton C. W.; Yu P. W.; Singh Jasprit; Masselink W. T.; Fischer R.; Morkoç H.

Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy

Masselink W. T.; Henderson T.; Klem J.; Fischer R.; Pearah P.; Morkoç H.; Hafich M.; Wang P. D.; Robinson G. Y.

Optical properties of GaAs on (100) Si using molecular beam epitaxy

Wei H. P.; Chou M. J.; Tsui D. C.; Klem J.; Morkoç H.; Wagner R. J.

Transport studies of GaAs1-;xSbx‐Al;yGa1-;yAs strained‐layer superlattices

Arnold D.; Ketterson A.; Henderson T.; Klem J.; Morkoç H.

Determination of the valence‐band discontinuity between GaAs and (Al,Ga)As by the use of ;p+‐GaAs‐(Al,Ga)As‐;p-;‐GaAs capacitors

Masselink W. T.; Drummond T. J.; Klem J.; Kopp W.; Chang Y. C.; Ponse F.; Morkoç H.

Saturation in the transfer characteristics of (Al,Ga)As/GaAs modulation‐doped field‐effect transistors at 77 K

Chand Naresh; Fischer Russ; Henderson Tim; Klem John; Kopp William; Morkoç Hadis

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Henderson T.; Erickson L. P.; Morkoç H.; Klem J.; Fischer R.; Kopp W.; Palmberg P. W.

Large capacity As2 source for molecular beam epitaxy

Chand Naresh; Henderson Tim; Klem John; Masselink W. Ted; Fischer Russ; Chang Yia-Chung; Morkoç Hadis

Comprehensive analysis of Si‐doped Al;xGa1-;xAs (x=0 to 1); Theory and experiments

Erickson L. Peter; Mattord Terry J.; Carpenter Gregory L.; Palmberg Paul W.; Pearah P. J.; Klein M. V.; Morkoç Hadis

Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2

Arnold D.; Henderson T.; Klem J.; Fischer R.; Kopp W.; Ketterson A.; Masselink W. T.; Morkoç H.

High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface

Arnold D.; Klem J.; Henderson T.; Morkoç H.; Erickson L. P.

Backgating in GaAs/(Al,Ga)As modulation‐doped field‐effect transistors and its reduction with a superlattice

Pearah P.; Henderson T.; Klem J.; Morkoç H.; Nilsson B.; Wu O.; Swanson A. W.; Ch'en D. R.

Rapid thermal annealing of modulation‐doped Al;xGa1-;xAs/GaAs heterostructures for device applications

Masselink W. T.; Fischer R.; Klem J.; Henderson T.; Pearah P.; Morkoç H.

Polar semiconductor quantum wells on nonpolar substrates: (Al,Ga)As/GaAs on (100)Ge

Masselink W. T.; Chang Yia-Chung; Morkoç H.

Binding energies of acceptors in GaAs–Al;xGa1-;xAs quantum wells

Hickmott T. W.; Fischer R.; Stern Frank; Fang F. F.; Solomon P. M.; Morkoç H.

Sequential single‐phonon emission in GaAs‐Al;xGa1-;xAs tunnel junctions

Klem J.; Fischer R.; Masselink W. T.; Kopp W.; Morkoç H.

GaAs/GaAs1-;ySby superlattice light emitting diodes

Teicher M.; Beserman R.; Klein M. V.; Morkoç H.

Crystalline structure of mixed Ga1-;xAlxAs and GaP1-;xAsx crystals

Fischer R.; Masselink W. T.; Sun Y. L.; Drummond T. J.; Chang Y. C.; Klein M. V.; Morkoç H.; Anderson E.

Improvement of the inverted GaAs/AlGaAs heterointerface

Nathan M. I.; Heiblum M.; Klem J.; Morkoç H.

Persistent photoconductivity in AlGaAs–GaAs heterostructures

Masselink W. T.; Sun Y. L.; Fischer R.; Drummond T. J.; Chang Y. C.; Klein M. V.; Morkoç H.

Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces

Lee Kwyro; Shur Michael; Drummond Timothy J.; Morkoç Hadis

Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)

Masselink W. T.; Klein M. V.; Sun Y. L.; Chang Y. C.; Fischer R.; Drummond T. J.; Morkoç H.

Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffers

Drummond T. J.; Fischer R.; Arnold D.; Morkoç H.; Shur M. S.

Current‐voltage and capacitance‐voltage characteristics of a metal/Al;0.5Ga0.5As/GaAs capacitor

Hickmott T. W.; Solomon P. M.; Fischer R.; Morkoç H.

Resonant Fowler–Nordheim tunneling in ;n-;GaAs‐undoped Al;xGa1-;xAs‐;n+GaAs capacitors

Fischer R.; Klem J.; Drummond T. J.; Kopp W.; Morkoç H.; Anderson E.; Pion M.

Improved AlxGa1-;xAs bulk lasers with superlattice interfaces

Masselink W. T.; Chang Yia-Chung; Morkoç H.

Binding energies of acceptors in GaAs‐Al;xGa1-;xAs quantum wells

Su S. L.; Fischer R.; Lyons W. G.; Tejayadi O.; Arnold D.; Klem J.; Morkoç H.

Double heterojunction GaAs/AlxGa1-;xAs bipolar transistors prepared by molecular beam epitaxy

Lee K.; Shur M. S.; Drummond T. J.; Morkoç H.

Low field mobility of 2‐;d electron gas in modulation doped AlxGa1-;xAs/GaAs layers

Klem J.; Masselink W. T.; Arnold D.; Fischer R.; Drummond T. J.; Morkoç H.; Lee K.; Shur M. S.

Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature

Mendez E. E.; Heiblum M.; Fisher R.; Klem J.; Thorne R. E.; Morkoç H.

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

Neumann D. A.; Zabel H.; Morkoç H.

X‐ray evidence for a terraced GaAs/AlAs superlattice

Fischer R.; Klem J.; Drummond T. J.; Thorne R. E.; Kopp W.; Morkoç H.; Cho A. Y.

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

Solomon P. M.; Hickmott T. W.; Morkoç H.; Fischer R.

Electrical measurements on n+‐GaAs‐undoped Ga;0.6Al0.4 As‐;n‐GaAs capacitors

Lee K.; Shur M. S.; Drummond T. J.; Su S. L.; Lyons W. G.; Fischer R.; Morkoç H.

Design and fabrication of high transconductance modulation‐doped (Al,Ga)As/GaAs FETs

Lee Kwyro; Shur Michael; Drummond Timothy J.; Morkoç Hadis

Electron density of the two‐dimensional electron gas in modulation doped layers

Drummond T. J.; Klem J.; Arnold D.; Fischer R.; Thorne R. E.; Lyons W. G.; Morkoç H.

Use of a superlattice to enhance the interface properties between two bulk heterolayers

Drummond T. J.; Fischer R.; Su S. L.; Lyons W. G.; Morkoç H.; Lee K.; Shur M. S.

Characteristics of modulation‐doped Al;xGa1-;xAl/GaAs field‐effect transistors; Effect of donor‐electron separation

Su S. L.; Lyons W. G.; Fischer R.; Thorne R. E.; Morkoç H.

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

Drummond T. J.; Lyons W. G.; Fischer R.; Thorne R. E.; Morkoç H.; Hopkins C. G.; Evans C. A.

Si incorporation in AlxGa1-;xAs grown by molecular beam epitaxy

Kopp W.; Su S. L.; Fischer R.; Lyons W. G.; Thorne R. E.; Drummond T. J.; Morkoç H.; Cho A. Y.

Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1-;xAs field‐effect transistors

Hoskins Michael J.; Morkoç Hadis; Hunsinger Bill J.

Charge transport by surface acoustic waves in GaAs

Thorne R. E.; Su S. L.; Kopp W.; Fischer R.; Drummond T. J.; Morkoç H.

Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

Drummond T. J.; Kopp W.; Morkoç H.; Keever M.

Transport in modulation‐doped structures (Al;xGa1-;xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)

Thorne R. E.; Drummond T. J.; Lyons W. G.; Fischer R.; Morkoç H.

An explanation for anomalous donor activation energies in Al0.35Ga0.65As

Drummond T. J.; Fischer R.; Miller P.; Morkoç H.; Cho A. Y.

Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1-;xAs/GaAs heterojunctions

Drummond T. J.; Kopp W.; Thorne R. E.; Fischer R.; Morkoç H.

Influence of AlxGa1-;xAs buffer layers on the performance of modulation‐doped field‐effect transistors

Drummond T. J.; Morkoç H.; Cheng K. Y.; Cho A. Y.

Current transport in modulation‐doped Ga;0.47In0.53As/Al0.48In0.52As heterojunctions at moderate electric fields

Drummond T. J.; Wang T.; Kopp W.; Morkoç H.; Thorne R. E.; Su S. L.

A novel normally‐off camel diode gate GaAs field‐effect transistor

Holonyak N.; Vojak B. A.; Morkoç H.; Drummond T. J.; Hess K.

Stimulated emission in a degenerately doped GaAs quantum well

Morkoç H.; Drummond T. J.; Fischer R.; Cho A. Y.

Moderate mobility enhancement in single period AlxGa1-;x As/GaAs heterojunctions with GaAs on top

Coleman Paul D.; Freeman Jay; Morkoç H.; Hess K.; Streetman B.; Keever M.

Demonstration of a new oscillator based on real‐space transfer in heterojunctions

Drummond T. J.; Fischer R.; Morkoç H.; Miller P.

Influence of substrate temperature on the mobility of modulation‐doped Al;xGa1-;xAs/GaAs heterostructures grown by molecular beam epitaxy

Drummond T. J.; Kopp W.; Fischer R.; Morkoç H.; Thorne R. E.; Cho A. Y.

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

Keever M.; Drummond T. J.; Morkoç H.; Hess K.; Streetman B. G.; Ludowise M.

Hall effect and mobility in heterojunction layers

Morkoç H.; Drummond T. J.; Fischer R.

Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy

Drummond T. J.; Kopp W.; Fischer R.; Morkoç H.

Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures

Drummond T. J.; Kopp W.; Keever M.; Morkoç H.; Cho A. Y.

Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures

Cheng K. Y.; Cho A. Y.; Drummond T. J.; Morkoç H.

Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy

Morkoç H.; Drummond T. J.; Camras M. D.; Holonyak N.

Short‐wavelength continuous 300‐K photopumped Al;xGa1-;xAs‐GaAs quantum well heterostructure laser (λ≳7270 Å)

Holonyak N.; Laidig W. D.; Camras M. D.; Morkoç H.; Drummond T. J.; Hess K.; Burroughs M. S.

Clustering in molecular‐beam epitaxial Al;xGa1-;xAs‐GaAs quantum‐well heterostructure lasers

Drummond T. J.; Kopp W.; Morkoç H.; Hess K.; Cho A. Y.; Streetman B. G.

Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures

Drummond T. J.; Morkoç H.; Hess K.; Cho A. Y.

Experimental and theoretical electron mobility of modulation doped AlxGa1-;xAs/GaAs heterostructures grown by molecular beam epitaxy

Stanchak C. M.; Witkowski L. C.; Morkoç H.; Drummond T. J.

Automatic shutter controller for molecular beam epitaxy

Drummond T. J.; Morkoç H.; Cho A. Y.

Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1-;xAs/GaAs heterostructures

Keever M.; Shichijo H.; Hess K.; Banerjee S.; Witkowski L.; Morkoç H.; Streetman B. G.

Measurements of hot‐electron conduction and real‐space transfer in GaAs‐Al;xGa1-;xAs heterojunction layers

Witkowski L. C.; Drummond T. J.; Stanchak C. M.; Morkoç H.

High mobilities in AlxGa1-;xAs‐GaAs heterojuntions

Morkoç Hadis; Hopkins Craig; Evans C. A.; Cho A. Y.

Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy

Morkoç Hadis; Cho A. Y.; Radice C.

Transport properties of Sn‐doped Al;xGa1-;xAs grown by molecular beam epitaxy