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Minami, Tadatsugu

Computed

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Research Profile

Latest Publications

1.
2011

Nomoto Jun-ichi; Miyata Toshihiro; Minami Tadatsugu

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods
J. Vac. Sci. Technol. A 29, 041504 (2011)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
2.
2011

Minami Tadatsugu; Nishi Yuki; Miyata Toshihiro; Nomoto Jun-ichi

High-Efficiency Oxide Solar Cells with ZnO/Cu2O Heterojunction Fabricated on Thermally Oxidized Cu2O Sheets
Appl. Phys. Express 4, 062301 (2011)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
3.
2010

Nomoto Jun-ichi; Konagai Manabu; Miyata Toshihiro; Minami Tadatsugu

Resistivity characteristics of transparent conducting impurity-doped ZnO films for use in oxidizing environments at high temperatures
J. Vac. Sci. Technol. A 28, 861 (2010)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan

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All Publications

1.
2011

Nomoto Jun-ichi; Miyata Toshihiro; Minami Tadatsugu

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods
J. Vac. Sci. Technol. A 29, 041504 (2011)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
2.
2011

Minami Tadatsugu; Nishi Yuki; Miyata Toshihiro; Nomoto Jun-ichi

High-Efficiency Oxide Solar Cells with ZnO/Cu2O Heterojunction Fabricated on Thermally Oxidized Cu2O Sheets
Appl. Phys. Express 4, 062301 (2011)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
3.
2010

Nomoto Jun-ichi; Konagai Manabu; Miyata Toshihiro; Minami Tadatsugu

Resistivity characteristics of transparent conducting impurity-doped ZnO films for use in oxidizing environments at high temperatures
J. Vac. Sci. Technol. A 28, 861 (2010)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
4.
2010

Minami Tadatsugu; Oda Jun-ichi; Nomoto Jun-ichi; Miyata Toshihiro

Spatial resistivity distribution of transparent conducting impurity-doped ZnO thin films deposited on substrates by dc magnetron sputtering
J. Vac. Sci. Technol. A 28, 842 (2010)
Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
5.
2010

Minami Tadatsugu; Miyata Toshihiro; Ishino Jun-ichi; Sahara Keiichi

Luminescent characteristics in blue-emitting Bi-activated multicomponent oxide phosphor thin films
J. Vac. Sci. Technol. B 28, C2B56 (2010)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
6.
2009

Minami Tadatsugu; Okada Kenji; Miyata Toshihiro; Nomoto Juni-chi; Hara Youhei; Abe Hiroshi

Transparent conducting impurity-doped ZnO thin films prepared using oxide targets sintered by millimeter-wave heating
J. Vac. Sci. Technol. A 27, 1006 (2009)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
7.
2009

Nomoto Jun-ichi; Miyata Toshihiro; Minami Tadatsugu

Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC
J. Vac. Sci. Technol. A 27, 1001 (2009)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
8.
2008

Fukada Haruki; Miyata Toshihiro; Matsui Shun; Minami Tadatsugu

Photoluminescence and electroluminescence from Eu-activated CaAl2O4-based multicomponent oxide thin-film phosphors
J. Vac. Sci. Technol. A 26, 944 (2008)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
9.
2007

Miyata Toshihiro; Honma Yasunori; Minami Tadatsugu

Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation
J. Vac. Sci. Technol. A 25, 1193 (2007)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
10.
2007

Minami Tadatsugu; Ohtani Yuusuke; Miyata Toshihiro; Kuboi Takeshi

Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination
J. Vac. Sci. Technol. A 25, 1172 (2007)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
11.
2006

Minami Tadatsugu; Miyata Toshihiro; Ohtani Yuusuke; Mochizuki Yuu

New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition
Jpn. J. Appl. Phys., Part 2 45, L409 (2006)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan ;
12.
2005

Minami Tadatsugu; Tsukada Satoshi; Minamino Youhei; Miyata Toshihiro

Preparation of transparent and conductive multicomponent Zn–In–Sn oxide thin films by vacuum arc plasma evaporation
J. Vac. Sci. Technol. A 23, 1128 (2005)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
13.
2004

Minami Tadatsugu; Miyata Toshihiro; Shimakawa Takahiro; Tanaka Hideki; Sato Hirotoshi

High‐Efficiency Oxide Heterojunction Solar Cells Using Cu;2O Sheets
Jpn. J. Appl. Phys., Part 2 43, L917 (2004)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7‐1 Ohgigaoka, Nonoichi, Ishikawa 921‐8501, Japan;
14.
2004

Tanaka Hideki; Sato Hirotoshi; Miyata Toshihiro; Ihara Kazuhiko; Minami Tadatsugu

Low resistivity polycrystalline ZnO:Al thin films prepared by pulsed laser deposition
J. Vac. Sci. Technol. A 22, 1757 (2004)
Research and Development Center, Gunze Limited, 163 Morikawara, Moriyama, Shiga 524-8501, Japan;
15.
2004

Miyata Toshihiro; Minamino Youhei; Ida Satoshi; Minami Tadatsugu

Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation
J. Vac. Sci. Technol. A 22, 1711 (2004)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
16.
2003

Minami Tadatsugu; Miyata Toshihiro; Suzuki Yasuyuki

High‐Luminance Multicolor‐Emitting Thin‐Film Electroluminescent Devices Using (Y;2O3‐Ga;2O3);Mn Phosphors
Jpn. J. Appl. Phys., Part 2 42, L1018 (2003)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7‐1 Ohgigaoka, Nonoichi, Ishikawa 921‐8501, Japan;
17.
2003

Miyata Toshihiro; Ida Satoshi; Minami Tadatsugu

High-rate deposition of ZnO thin films by vacuum arc plasma evaporation
J. Vac. Sci. Technol. A 21, 1404 (2003)
Optoelectronic Device System Research and Development Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
18.
2003

Suzuki Shingo; Miyata Toshihiro; Minami Tadatsugu

p-type semiconducting Cu2O–CoO; thin films prepared by magnetron sputtering
J. Vac. Sci. Technol. A 21, 1336 (2003)
Optoelectronic Device System Research and Development Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
19.
2003

Minami Tadatsugu; Utsubo Tetsuharu; Miyata Toshihiro; Ohbayashi Yoshiaki

Inorganic electret using SiO2 thin films prepared by radio-frequency magnetron sputtering
J. Vac. Sci. Technol. A 21, 1178 (2003)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;
20.
2002

Minami Tadatsugu; Kobayashi Youhei; Miyata Toshihiro; Suzuki Shingo

High‐Luminance Thin‐Film Electroluminescent Devices Using ((Y;2O3);0.6‐(GeO;2);0.4);Mn Phosphors
Jpn. J. Appl. Phys., Part 2 41, L577 (2002)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7‐1 Ohgigaoka, Nonoichi, Ishikawa 921‐8501, Japan;
21.
2002

Minami Tadatsugu; Kobayashi Youhei; Shirai Tetsuya; Miyata Toshihiro; Suzuki Shingo

High‐Luminance Thin Film Electroluminescent Devices Using Monoclinic Y;2O3 Phosphor Activated with Mn
Jpn. J. Appl. Phys., Part 2 41, L478 (2002)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7‐1 Ohgigaoka, Nonoichi, Ishikawa 921‐8501, Japan;
22.
2001

Minami Tadatsugu; Yamazaki Masashi; Miyata Toshihiro; Shirai Tetsuya

Mn-Activated Y2O3–GeO;2 Phosphors for Thin-Film Electroluminescent Devices
Jpn. J. Appl. Phys., Part 2 40, L864 (2001)
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan;

Co-authors

Co-publications
22

Miyata, Toshihiro
3

Suzuki, Shingo
2

Shirai, Tetsuya
2

Tanaka, Hideki
2

Kobayashi, Youhei
2

Ida, Satoshi
2

Ohtani, Yuusuke
2

Sato, Hirotoshi