McGill, TC

Cartoixà X.; Ting D. Z.-Y.; McGill T. C.

Description of bulk inversion asymmetry in the effective-bond-orbital model

Strittmatter R. P.; Beach R. A.; Picus G. S.; McGill T. C.

Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes

Preisler E. J.; Brooke J.; Oldham N. C.; McGill T. C.

Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection

Cartoixà X.; Ting D. Z.-Y.; McGill T. C.

Description of bulk inversion asymmetry in the effective-bond-orbital model

Strittmatter R. P.; Beach R. A.; Picus G. S.; McGill T. C.

Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes

Preisler E. J.; Brooke J.; Oldham N. C.; McGill T. C.

Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection

Strittmatter R. P.; Beach R. A.; Brooke J.; Preisler E. J.; Picus G. S.; McGill T. C.

GaN Schottky diodes for piezoelectric strain sensing

Cartoixà X.; Ting D. Z.-Y.; McGill T. C.

Numerical spurious solutions in the effective mass approximation

Oldham N. C.; Hill C. J.; Garland C. M.; McGill T. C.

Deposition of Ga2O3-x; ultrathin films on GaAs by e-beam evaporation

Preisler E. J.; Marsh O. J.; Beach R. A.; McGill T. C.

Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

Strittmatter R. P.; Beach R. A.; McGill T. C.

Fabrication of GaN suspended microstructures

Cheng X.-C.; Cartoixà X.; Hill C. J.; Barton M. A.; McGill T. C.

Tunnel switch diode based on AlSb/GaSb heterojunctions

Hill C. J.; Beach R. A.; McGill T. C.

Nickel layers on indium arsenide

Alonzo A. C.; Cheng X.-C.; McGill T. C.

Strain in wet thermally oxidized square and circular mesas

Hill C. J.; Bridger P. M.; Picus G. S.; McGill T. C.

Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment

Cheng X-C.; McGill T. C.

Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers

Jones J. T.; Bridger P. M.; Marsh O. J.; McGill T. C.

Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy

Bridger P. M.; McGill T. C.

Observation of nanometer-scale optical property discrimination by use of a near-field scanning apertureless microscope

Beach R. A.; McGill T. C.

Piezoelectric fields in nitride devices

Bridger P. M.; Bandić Z. Z.; Piquette E. C.; McGill T. C.

Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

Bridger P. M.; Bandić Z. Z.; Piquette E. C.; McGill T. C.

Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

Piquette E. C.; Bridger P. M.; Bandić Z. Z.; McGill T. C.

Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire

Bandić Z. Z.; Bridger P. M.; Piquette E. C.; McGill T. C.; Vaudo R. P.; Phanse V. M.; Redwing J. M.

High voltage (450 V) GaN Schottky rectifiers

Alonzo A. C.; Cheng X. -C.; McGill T. C.

Effect of cylindrical geometry on the wet thermal oxidation of AlAs

Walachová J.; Zelinka J.; Vaniš J.; Chow D. H.; Schulman J. N.; Karamazov S.; Cukr M.; Zich P.; Král J.; McGill T. C.

Erratum: “Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy” [Appl. Phys. Lett. ;70, 3588 (1997)]

Bridger P. M.; Bandić Z. Z.; Piquette E. C.; McGill T. C.

Correlation between the surface defect distribution and minority carrier transport properties in GaN

Bandić Z. Z.; Bridger P. M.; Piquette E. C.; McGill T. C.

Electron diffusion length and lifetime in p-type GaN

Jones J. T.; Croke E. T.; Garland C. M.; Marsh O. J.; McGill T. C.

Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Cheng X.-C.; McGill T. C.

Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers

Ting D. Z.-Y.; McGill T. C.

Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures

Bandić Z. Z.; Bridger P. M.; Piquette E. C.; McGill T. C.

Minority carrier diffusion length and lifetime in GaN

Bandić Z. Z.; Piquette E. C.; McCaldin J. O.; McGill T. C.

Solid phase recrystallization of ZnS thin films on sapphire

Bandić Z. Z.; McGill T. C.; Ikonić Z.

Electronic structure of GaN stacking faults

Piquette E. C.; Bandić Z. Z.; McCaldin J. O.; McGill T. C.

Growth and characterization of light emitting ZnS/GaN heterostructures

Daniel E. S.; Jones J. T.; Marsh O. J.; McGill T. C.

Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

Cheng X.-C.; Collins D. A.; McGill T. C.

Mapping of AlxGa1-x;As band edges by ballistic electron emission spectroscopy

Walachová J.; Zelinka J.; Vaniš J.; Chow D. H.; Schulman J. N.; Karamazov S.; Cukr M.; Zich P.; Král J.; McGill T. C.

Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Liu Y. X.; Marquardt R. R.; Ting D. Z.-Y.; McGill T. C.

Magnetotunneling in interband tunnel structures

Liu Y. X.; Ting D. Z.-Y.; McGill T. C.

Efficient, numerically stable multiband k∙;p treatment of quantum transport in semiconductor heterostructures

Pettersson P. O.; Ahn C. C.; McGill T. C.; Croke E. T.; Hunter A. T.

Characterization of Si/Si1-;yCy superlattices grown by surfactant assisted molecular beam epitaxy

Bandić Z. Z.; McGill T. C.; Hauenstein R. J.; O'Steen M. L.

Microscopic processes during electron cyclotron resonance microwave nitrogen plasma‐assisted molecular beam epitaxial growth of GaN/GaAs heterostructures; Experiments and kinetic modeling

Ting D. Z.-Y.; McGill T. C.

Interface roughness effects on transport in tunnel structures

Marquardt R. R.; Collins D. A.; Liu Y. X.; Ting D. Z.-Y.; McGill T. C.

Resonant magnetotunneling spectroscopy of p‐type‐well interband tunneling diodes

Bandić Z. Z.; Hauenstein R. J.; O'Steen M. L.; McGill T. C.

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxial growth of GaN/GaAs‐based heterostructures

Lin J.-L.; Freiler M. B.; Levy M.; Osgood R. M.; Collins D.; McGill T. C.

Photon‐assisted cryoetching of III–V binary compounds by Cl;2 at 193 nm

Pettersson P. O.; Ahn C. C.; McGill T. C.; Croke E. T.; Hunter A. T.

Sb‐surfactant‐mediated growth of Si/Si;1-;yCy superlattices by molecular‐beam epitaxy

Collins D. A.; Papa G. O.; McGill T. C.

Real‐time extraction of growth rates from rotating substrates during molecular‐beam epitaxy

Wang M. W.; Collins D. A.; McGill T. C.; Grant R. W.; Feenstra R. M.

Study of interface asymmetry in InAs–GaSb heterojunctions

Wang M. W.; Collins D. A.; McGill T. C.; Grant R. W.; Feenstra R. M.

Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset

Hauenstein R. J.; Collins D. A.; Cai X. P.; O'Steen M. L.; McGill T. C.

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

Wang M. W.; McCaldin J. O.; Swenberg J. F.; McGill T. C.; Hauenstein R. J.

Schottky‐based band lineups for refractory semiconductors

Pettersson P. O.; Miles R. J.; McGill T. C.

Surface morphology of silicon grown on CaF2/Si by electron‐beam‐assisted molecular‐beam epitaxy

Kirby S. K.; Ting D. Z.-Y.; McGill T. C.

Atomic‐scale imperfections and fluctuations in the transmission properties of a quantum dot

Feenstra R. M.; Collins D. A.; Ting D. Z.-Y.; Wang M. W.; McGill T. C.

Scanning tunneling microscopy of InAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry

Wang M. W.; Swenberg J. F.; Phillips M. C.; Yu E. T.; McCaldin J. O.; Grant R. W.; McGill T. C.

X‐ray photoelectron spectroscopy measurement of valence‐band offsets for Mg‐based semiconductor compounds

Feenstra R. M.; Collins D. A.; Ting D. Z.-Y.; Wang M. W.; McGill T. C.

Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy

Ting D. Z.-Y.; Kirby S. K.; McGill T. C.

Interface roughness effects in resonant tunneling structures

Collins D. A.; Wang M. W.; Grant R. W.; McGill T. C.

Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces

Collins D. A.; Wang M. W.; Grant R. W.; McGill T. C.

Reflection high energy electron diffraction observation of anion exchange reactions on InAs surfaces

Kirby S. K.; Ting D. Z.-Y.; McGill T. C.

Neutral impurities in tunneling structures

Ting D. Z.-Y.; Kirby S. K.; McGill T. C.

Three‐dimensional simulations of quantum transport in semiconductor nanostructures

Wang M. W.; McGill T. C.; Collins D. A.; Grant R. W.

X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface

Wang M. W.; Phillips M. C.; Swenberg J. F.; Yu E. T.; McCaldin J. O.; McGill T. C.

n‐CdSe/;p‐ZnTe based wide band‐gap light emitters; Numerical simulation and design

Ting D. Z.-Y.; McGill T. C.

Γ‐;X interference effects on quasi‐bound‐state lifetimes in GaAs/AlAs double‐barrier heterostructures

Yu E. T.; Phillips M. C.; Chow D. H.; Collins D. A.; Wang M. W.; McCaldin J. O.; McGill T. C.

Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system

McCaldin J. O.; McGill T. C.

Comment on ‘‘Empirical fit to band discontinuities and barrier heights in III‐V alloy systems’’

Phillips M. C.; Wang M. W.; Swenberg J. F.; McCaldin J. O.; McGill T. C.

Proposal and verification of a new visible light emitter based on wide band gap II‐VI semiconductors

Liu Y. X.; Wang M. W.; McCaldin J. O.; McGill T. C.

Schottky barrier induced injecting contact on wide band gap semiconductors

Ting D. Z.-Y.; McGill T. C.

Effect of Γ–;X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures

Collins D. A.; Fu T. C.; McGill T. C.; Chow D. H.

Reflection high‐energy electron diffraction studies of the growth of InAs/Ga;1-;xInxSb strained‐layer superlattices

Ting D. Z.-Y.; Yu E. T.; McGill T. C.

Multiband treatment of quantum transport in interband tunnel devices

Ting D. Z.-Y.; Yu E. T.; McGill T. C.

Effect of band mixing on hole‐tunneling times in GaAs/AlAs double‐barrier heterostructures

Ting D. Z.-Y.; Yu E. T.; McGill T. C.

Band structure effects in interband tunnel devices

Croke E. T.; Hauenstein R. J.; Fu T. C.; McGill T. C.

Observation of a (2×8) surface reconstruction on Si;1-;xGex alloys grown on (100) Si by molecular‐beam epitaxy

Yu E. T.; McCaldin J. O.; Phillips M. C.; McGill T. C.

Measurement of the CdSe/ZnTe valence band offset by x‐ray photoelectron spectroscopy

Brown E. R.; Söderström J. R.; Parker C. D.; Mahoney L. J.; Molvar K. M.; McGill T. C.

Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

Collins D. A.; Chow D. H.; McGill T. C.

Experimental observation of large room‐temperature current gains in a Stark effect transistor

Jackson M. K.; Söderström J. R.; Collins D. A.; Chow D. H.; Ting D. Z.-Y.; McGill T. C.

Effect of the X point on the escape of electrons from the quantum well of a double‐barrier heterostructure

Ting D. Z.-Y.; Yu E. T.; McGill T. C.

Role of heavy‐hole states in interband tunnel structures

Söderström J. R.; Brown E. R.; Parker C. D.; Mahoney L. J.; Yao J. Y.; Andersson T. G.; McGill T. C.

Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes

Yu E. T.; Collins D. A.; Ting D. Z.-Y.; Chow D. H.; McGill T. C.

Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices

Rossi T. M.; Collins D. A.; Chow D. H.; McGill T. C.

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

Chow D. H.; Yu E. T.; Söderström J. R.; Ting D. Z.-Y.; McGill T. C.

Negative differential resistance due to resonant interband tunneling of holes

Ting D. Z.-Y.; Collins D. A.; Yu E. T.; Chow D. H.; McGill T. C.

Large peak current densities in novel resonant interband tunneling heterostructures

Miles R. H.; Chow D. H.; Schulman J. N.; McGill T. C.

Infrared optical characterization of InAs/Ga1-;xInxSb superlattices

Collins D. A.; Yu E. T.; Rajakarunanayake Y.; Söderström J. R.; Ting D. Z.-Y.; Chow D. H.; McGill T. C.

Experimental observation of negative differential resistance from an InAs/GaSb interface

Söderström J. R.; Yu E. T.; Jackson M. K.; Rajakarunanayake Y.; McGill T. C.

Two‐band modeling of narrow band gap and interband tunneling devices

Rajakarunanayake Y.; McGill T. C.

Intersubband absorption in Si1-;xGex/Si superlattices for long wavelength infrared detectors

Yu E. T.; Croke E. T.; Chow D. H.; Collins D. A.; Phillips M. C.; McGill T. C.; McCaldin J. O.; Miles R. H.

Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)

Ting D. Z.-Y.; Yu E. T.; Collins D. A.; Chow D. H.; McGill T. C.

Modeling of novel heterojunction tunnel structures

Chow D. H.; Miles R. H.; Söderström J. R.; McGill T. C.

InAs/Ga1-;xInxSb strained‐layer superlattices grown by molecular‐beam epitaxy

Chow D. H.; Miles R. H.; Söderström J. R.; McGill T. C.

Growth and characterization of InAs/Ga1-;xInxSb strained‐layer superlattices

Yu E. T.; Croke E. T.; McGill T. C.; Miles R. H.

Measurement of the valence‐band offset in strained Si/Ge (100) heterojunctions by x‐ray photoelectron spectroscopy

Croke E. T.; McGill T. C.; Hauenstein R. J.; Miles R. H.

Evidence of segregation in (100) strained Si1-;xGex alloys grown at low temperature by molecular beam epitaxy

Wu G. Y.; McGill T. C.

Effects of barrier phonons on the tunneling current in a double‐barrier structure

Söderström J. R.; Chow D. H.; McGill T. C.

Observation of large peak‐to‐valley current ratios and large peak current densities in AlSb/InAs/AlSb double‐barrier tunnel structures

Rajakarunanayake Y.; McGill T. C.

Si‐Si;1-;xGexn‐type resonant tunnel structures

Söderström J. R.; Chow D. H.; McGill T. C.

Demonstration of large peak‐to‐valley current ratios in InAs/AlGaSb/InAs single‐barrier heterostructures

Rajakarunanayake Y.; Cole B. H.; McCaldin J. O.; Chow D. H.; Söderström J. R.; McGill T. C.; Jones C. M.

Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe

Söderström J. R.; Chow D. H.; McGill T. C.

New negative differential resistance device based on resonant interband tunneling

Jackson M. K.; Miles R. H.; McGill T. C.; Faurie J. P.

Raman scattering determination of strain in CdTe/ZnTe superlattices

Yu E. T.; Jackson M. K.; McGill T. C.

Hole tunneling times in GaAs/AlAs double‐barrier structures

Rajakarunanayake Y.; McGill T. C.

Band structure and optical properties of Si‐Si;1-;xGex superlattices

Johnson M. B.; McGill T. C.; Hunter A. T.

Space‐ and time‐resolved photoluminescence of In‐alloyed GaAs using photoluminescence excitation correlation spectroscopy

Rajakarunanayake Y.; McGill T. C.

Strain effects and optical properties of Si1-;xGex/Si superlattices

Hauenstein R. J.; Croke E. T.; Marsh O. J.; Miles R. H.; Clemens B. M.; McGill T. C.

Strain relaxation kinetics in Si1-;xGex/Si heterostructures

Miles R. H.; McGill T. C.

Structural perfection in poorly lattice matched heterostructures

Ting D. Z.-Y.; McGill T. C.

X‐point tunneling in AlAs–GaAs–AlAs double barrier heterostructures

Johnson M. B.; McGill T. C.; Paulter N. G.

Carrier lifetimes in ion‐damaged GaAs

Wu G. Y.; McGill T. C.; Mailhiot C.; Smith D. L.

k∙;p theory of semiconductor superlattice electronic structure in an applied magnetic field

Yu E. T.; Chow D. H.; McGill T. C.

Commutativity of the GaAs/AlAs (100) band offset

Jackson M. K.; Johnson M. B.; Chow D. H.; McGill T. C.; Nieh C. W.

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

Boudville W. J.; McGill T. C.

Finite‐size effects in two‐dimensional continuum percolation

Johnson N. F.; Ehrenreich H.; Wu G. Y.; McGill T. C.

Superlattice k∙;p models for calculating electronic structure

Yu E. T.; Chow D. H.; McGill T. C.

Commutativity of the GaAs/AlAs(100) band offset

Croke E. T.; Hauenstein R. J.; McGill T. C.

Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Yu E. T.; McGill T. C.

III‐V/II‐VI double‐barrier resonant tunneling structures

Miles R. H.; Chow P. P.; Johnson D. C.; Hauenstein R. J.; Marsh O. J.; Nieh C. W.; Strathman M. D.; McGill T. C.

Accommodation of lattice mismatch in GexSi1-;x/Si superlattices

McCaldin J. O.; McGill T. C.

Proposal of a new visible light emitting structure: n‐AlSb/;p‐ZnTe heterojunctions

Rajakarunanayake Y.; Miles R. H.; Wu G. Y.; McGill T. C.

Band offset of the ZnSe–ZnTe superlattices; A fit to photoluminescence data by ;k∙;p theory

Chow D. H.; Shirland F. A.; Faurie J. P.; Sou I. K.; McGill T. C.; Bonnefoi A. R.; McCaldin J. O.; Wu O. K.

Electrical studies of single‐barrier Hg;1-;xCdxTe heterostructures

Rajakarunanayake Y.; Miles R. H.; Wu G. Y.; McGill T. C.

Band structure of ZnSe‐ZnTe superlattices

Bonnefoi A. R.; McGill T. C.; Burnham R. D.

Resonant tunneling through GaAs quantum‐well energy levels confined by Al;xGa1-;xAs Γ;‐ and ;X‐point barriers

Boudville W. J.; McGill T. C.

Scale dependence of resistance fluctuations at metal‐semiconductor junctions

Johnson M. B.; McGill T. C.; Hunter A. T.

Picosecond time‐resolved photoluminescence using picosecond excitation correlation spectroscopy

Miles R. H.; McGill T. C.; Chow P. P.; Johnson D. C.; Hauenstein R. J.; Nieh C. W.; Strathman M. D.

Dependence of critical thickness on growth temperature in GexSi1-;x/Si superlattices

Chow D. H.; McGill T. C.; Sou I. K.; Faurie J. P.; Nieh C. W.

Observation of negative differential resistance from a single barrier heterostructure

Chow D. H.; McCaldin J. O.; Bonnefoi A. R.; McGill T. C.; Sou I. K.; Faurie J. P.

Electrical determination of the valence‐band discontinuity in HgTe‐CdTe heterojunctions

Johnson N. F.; Ehrenreich H.; Hass K. C.; McGill T. C.

f‐sum rule and effective masses in superlattices

Woodward T. K.; McGill T. C.; Chung H. F.; Burnham R. D.

Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

Bonnefoi A. R.; Chow D. H.; McGill T. C.

Energy‐band diagrams and current‐voltage characteristics of single‐barrier tunnel structures

Wu G. Y.; McGill T. C.; Smith D. L.; Mailhiot C.

Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field

Rajakarunanayake Y.; McGill T. C.

Self‐consistent solutions of electronic wave functions at GaAs–Al;xGa1-;xAs interfaces

Miles R. H.; McGill T. C.; Sivananthan S.; Chu X.; Faurie J. P.

Structure of CdTe/ZnTe superlattices

Woodward T. K.; McGill T. C.; Burnham R. D.

Experimental realization of a resonant tunneling transistor

Bonnefoi A. R.; McGill T. C.; Burnham R. D.; Anderson G. B.

Observation of resonant tunneling through GaAs quantum well states confined by AlAs X‐point barriers

Wu G. Y.; Smith D. L.; Mailhiot C.; McGill T. C.

Theoretical study of the electronic properties of semimagnetic superlattices

Woodward T. K.; McGill T. C.; Burnham R. D.

Photoresponse of asymmetrically doped GaAs‐AlAs heterostructures under external bias

Bonnefoi A. R.; Chow D. H.; McGill T. C.; Burnham R. D.; Ponce F. A.

Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition

Woodward T. K.; McGill T. C.; Burnham R. D.

Electrical behavior of GaAs–AlAs heterostructures

Baukus J. P.; Hunter A. T.; Marsh O. J.; Jones C. E.; Wu G. Y.; Hetzler S. R.; McGill T. C.; Faurie J. P.

Infrared absorption measurement and analysis of HgTe–CdTe superlattices

McGill T. C.; Wu G. Y.; Hetzler S. R.

Superlattices: Progress and prospects

Chow D. H.; McGill T. C.

Negative differential resistances from Hg1-;xCdxTe‐CdTe single quantum barrier heterostructures

Miles R. H.; Wu G. Y.; Johnson M. B.; McGill T. C.; Faurie J. P.; Sivananthan S.

Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices

Hauenstein R. J.; Hunt B. D.; McGill T. C.; Schlesinger T. E.; Schowalter L. J.

Schottky barrier height measurements of type‐A and type‐B NiSi;2 epilayers on Si

Boudville W. J.; McGill T. C.

Resistance fluctuations in ohmic contacts due to discreteness of dopants

Hauenstein R. J.; Schlesinger T. E.; McGill T. C.; Hunt B. D.; Schowalter L. J.

Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si

Wu G. Y.; McGill T. C.

Band offsets and the optical properties of HgTe‐CdTe superlattices

Bonnefoi A. R.; Chow D. H.; McGill T. C.

Inverted base‐collector tunnel transistors

Hauenstein R. J.; Schlesinger T. E.; McGill T. C.; Hunt B. D.; Schowalter L. J.

Schottky barrier height measurements of epitaxial NiSi2 on Si

Wu G. Y.; McGill T. C.

Strain effects in HgTe‐CdTe superlattices grown on CdTe substrates

Woodward T. K.; Schlesinger T. E.; McGill T. C.; Burnham R. D.

Capacitance‐voltage characteristics of GaAs‐AlAs heterostructures

Bonnefoi A. R.; McGill T. C.; Burnham R. D.

Uniformity in the electrical characteristics of GaAs/AlAs tunnel structures grown by metalorganic chemical vapor deposition

Hetzler S. R.; Baukus J. P.; Hunter A. T.; Faurie J. P.; Chow P. P.; McGill T. C.

Infrared photoluminescence spectra from HgTe‐CdTe superlattices

Schlesinger T. E.; Collins R. T.; McGill T. C.; Burnham R. D.

Optical investigations of electron transport through GaAs/AlAs heterostructures

Johnson M. B.; McCaldin J. O.; Zur A.; McGill T. C.

Summary Abstract: Band offsets at HgTe CdTe interfaces

Boudville W. J.; McGill T. C.

Ohmic contacts to n‐type GaAs

Schlesinger T. E.; Zur A.; McGill T. C.; Burnham R. D.

Photoresponse of GaAs/AlAs heterostructures under external bias

Zur A.; McGill T. C.

Theoretical investigation of the effect of strain on phase separation in epitaxial layers

Bonnefoi A. R.; Collins R. T.; McGill T. C.; Burnham R. D.; Ponce F. A.

Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition

Zur A.; McGill T. C.; Nicolet M-A.

Transition‐metal silicides lattice‐matched to silicon

Wu G. Y.; Mailhiot C.; McGill T. C.

Optical properties of HgTe‐CdTe superlattices

Prabhakar A.; McGill T. C.

Thermally induced transition metal contamination of silicide Schottky barriers on silicon

Schlesinger T. E.; Collins R. T.; McGill T. C.; Burnham R. D.

Photovoltaic investigations of GaAs/AlAs heterostructures

Collins R. T.; McGill T. C.; Lambe J.; Burnham R. D.

Summary Abstract: Elastic and inelastic tunneling characteristics of AlAs/GaAs heterojunctions

Zur A.; McGill T. C.

Band offsets, defects, and dipole layers in semiconductor heterojunctions

Mailhiot C.; McGill T. C.; Smith D. L.

New approach to the k∙ ;p theory of semiconductor superlattices

Hetzler S. R.; McGill T. C.; Hunter A. T.

Selective excitation luminescence and electronic Raman scattering study of the 78‐meV acceptor in GaAs

Collins R. T.; Lambe J.; McGill T. C.; Burnham R. D.

Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunction barriers

Collins R. T.; Lambe J.; McGill T. C.; Burnham R. D.

Inelastic tunneling characteristics of AlAs/GaAs heterojunctions

Hauenstein R. J.; McGill T. C.; Feenstra R. M.

Vibrational modes of oxygen in GaP including second‐nearest‐neighbor interactions

Zur A.; McGill T. C.

Lattice match: An application to heteroepitaxy

Prabhakar A.; McGill T. C.; Nicolet M-A.

Platinum diffusion into silicon from PtSi

Feenstra R. M.; Hauenstein R. J.; McGill T. C.

Vibrational modes of oxygen in GaP including nearest‐neighbor interactions

Schlesinger T. E.; McGill T. C.

Isotope‐shift experiments on luminescence attributed to (Fe,B) pairs in silicon

Zur A.; McGill T. C.; Smith D. L.

Fermi‐level position at a semiconductor‐metal interface

Smith D. L.; McGill T. C.; Schulman J. N.

Advantages of the HgTe‐CdTe superlattice as an infrared detector material

Mailhiot C.; Smith D. L.; McGill T. C.

Transport characteristics of L‐point and Γ‐point electrons through GaAs–Ga;1-;xAlxAs–GaAs(111) double heterojunctions

Zur A.; McGill T. C.; Smith D. L.

Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface

Collins R. T.; McGill T. C.

Electronic properties of deep levels in p‐type CdTe

Mailhiot C.; McGill T. C.; Schulman J. N.

Tunneling and propagating transport in GaAs–Ga;1-;xAlxAs–GaAs(100) double heterojunctions

McGill T. C.; Smith D. L.

Summary Abstract: HgTe–CdTe superlattices

Mailhiot C.; Chang Yia-Chung; McGill T. C.

Energy spectra of donors in GaAs‐Ga;1-;xAlxAs quantum well structures in the effective‐mass approximation

Feenstra R. M.; McGill T. C.

Periodicity in the undulation spectra of GaP:N

Redondo Antonio; Goddard William A.; McGill T. C.

Mott insulator model of the Si(111)–(2×1) surface

Mailhiot C.; Chang Yia-Chung; McGill T. C.

Energy spectra of donors in GaAs–Ga;1-;xAlxAs quantum well structures in the effective mass approximation

Redondo Antonio; Goddard William A.; McGill T. C.

Summary Abstract: Mott insulator model of the Si(111)‐(2×1) surface

Schlesinger T. E.; McGill T. C.

Role of Fe in new luminescence lines in Si:Tl and Si:In

Feenstra R. M.; McGill T. C.

Reaction kinetics in GaP:(Zn,O)

Hunter A. T.; McGill T. C.

Luminescence studies of HgCdTe alloys

Swarts C. A.; Daw M. S.; McGill T. C.

Bulk vacancies in CdxHg1-;xTe

Collins R. T.; Kuech T. F.; McGill T. C.

A DLTS study of deep levels in n‐type CdTe

Mitchard G. S.; McGill T. C.

Photoluminescence of Si‐rich Si‐Ge Alloys

Chang Yia-Chung; McGill T. C.

Theory of multiexciton complexes bound to donors in multivalley semiconductors

Chang Yia-Chung; McGill T. C.

Theory of fine‐structure splittings for donor bound excitons in indirect materials

Chang Yia-Chung; McGill T. C.

Theory of D-; states in Ge and Si

James R. B.; Schweig Edgard; Smith D. L.; McGill T. C.

Experimental investigation of the infrared absorption saturation in p‐type germanium and silicon

Hunter A. T.; McGill T. C.

Selective excitation luminescence in bulk‐grown GaAs

Hunter A. T.; McGill T. C.

Erratum: Luminescence from HgCdTe alloys [J. Appl. Phys. ;52, 5779 (1981)]

Redondo A.; Goddard W. A.; McGill T. C.

Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters

Chang Yia-Chung; McGill T. C.

Valley‐orbit splittings for the donor states in GaP

Feenstra R. M.; McGill T. C.

Defect reactions in GaP:(Zn,O)

Swarts C. A.; Goddard W. A.; McGill T. C.

Geometry of the abrupt (110) Ge/GaAs interface

Daw M. S.; Smith D.L.; Swarts C.A.; McGill T.C.

Surface vacancies in II–VI and III–V zinc blende semiconductors

Redondo A.; Goddard W. A.; Swarts C. A.; McGill T. C.

Oxidation of silicon surfaces

Daw M. S.; Smith D. L.; McGill T. C.

Summary Abstract: Surface core excitons in III–V semiconductors

Swarts C. A.; Goddard W. A.; McGill T. C.

Core to surface excitations on GaAs(110)

Hunter A. T.; McGill T. C.

Luminescence from HgCdTe alloys

Chang Yia-Chung; McGill T. C.; Smith D. L.

Model Hamiltonian of donors in indirect‐gap materials

Schulman J. N.; McGill T. C.

Complex band structure and superlattice electronic states

Mitchard G. S.; McGill T. C.

Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system

Swarts C. A.; Goddard III W. A.; McGill T. C.

Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds

Swarts C. A.; Goddard III W. A.; Barton J. J.; McGill T. C.

Chemisorption of Al and Ga on the GaAs (110) surface

Schulman J. N.; McGill T. C.

Summary Abstract: Localization of superlattice electronic states and complex bulk band structures

Chang Y. C.; McGill T. C.

Excitation spectra of bound excitons and bound multiexciton complexes in n‐type Si

Hunter A. T.; Smith D. L.; McGill T. C.

Near‐band‐gap photoluminescence of Hg;1-;xCdxTe

Pan D. S.; Smith D. L.; McGill T. C.

Concentration broadening of bound‐exciton spectral lines

Elliott K. R.; McGill T. C.

Excited states of donor bound excitons in GaP

Barton John J.; Goddard William A.; Swarts Coenraad A.; McGill T. C.

Chemisorption of oxygen and aluminum on the GaAs (110) surface from abinitio theory