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1.
Cartoixà X.; Ting D. Z.-Y.; McGill T. C.
Description of bulk inversion asymmetry in the effective-bond-orbital model
2.
Strittmatter R. P.; Beach R. A.; Picus G. S.; McGill T. C.
Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes
3.
Preisler E. J.; Brooke J.; Oldham N. C.; McGill T. C.
Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection
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4.
Strittmatter R. P.; Beach R. A.; Brooke J.; Preisler E. J.; Picus G. S.; McGill T. C.
GaN Schottky diodes for piezoelectric strain sensing
5.
Numerical spurious solutions in the effective mass approximation
6.
Oldham N. C.; Hill C. J.; Garland C. M.; McGill T. C.
Deposition of Ga2O3-x; ultrathin films on GaAs by e-beam evaporation
7.
Preisler E. J.; Marsh O. J.; Beach R. A.; McGill T. C.
Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy
8.
Strittmatter R. P.; Beach R. A.; McGill T. C.
Fabrication of GaN suspended microstructures
9.
Cheng X.-C.; Cartoixà X.; Hill C. J.; Barton M. A.; McGill T. C.
Tunnel switch diode based on AlSb/GaSb heterojunctions
10.
Hill C. J.; Beach R. A.; McGill T. C.
Nickel layers on indium arsenide
11.
Alonzo A. C.; Cheng X.-C.; McGill T. C.
Strain in wet thermally oxidized square and circular mesas
12.
Hill C. J.; Bridger P. M.; Picus G. S.; McGill T. C.
Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment
13.
Cheng X-C.; McGill T. C.
Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers
14.
Jones J. T.; Bridger P. M.; Marsh O. J.; McGill T. C.
Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
15.
Bridger P. M.; McGill T. C.
Observation of nanometer-scale optical property discrimination by use of a near-field scanning apertureless microscope
16.
Beach R. A.; McGill T. C.
Piezoelectric fields in nitride devices
17.
Bridger P. M.; Bandić Z. Z.; Piquette E. C.; McGill T. C.
Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain
18.
Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy
19.
Piquette E. C.; Bridger P. M.; Bandić Z. Z.; McGill T. C.
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire
20.
Bandić Z. Z.; Bridger P. M.; Piquette E. C.; McGill T. C.; Vaudo R. P.; Phanse V. M.; Redwing J. M.
High voltage (450 V) GaN Schottky rectifiers
21.
Alonzo A. C.; Cheng X. -C.; McGill T. C.
Effect of cylindrical geometry on the wet thermal oxidation of AlAs
22.
Walachová J.; Zelinka J.; Vaniš J.; Chow D. H.; Schulman J. N.; Karamazov S.; Cukr M.; Zich P.; Král J.; McGill T. C.
Erratum: “Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy” [Appl. Phys. Lett. ;70, 3588 (1997)]
23.
Correlation between the surface defect distribution and minority carrier transport properties in GaN
24.
Bandić Z. Z.; Bridger P. M.; Piquette E. C.; McGill T. C.
Electron diffusion length and lifetime in p-type GaN
25.
Jones J. T.; Croke E. T.; Garland C. M.; Marsh O. J.; McGill T. C.
Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy
26.
Cheng X.-C.; McGill T. C.
Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers
27.
Ting D. Z.-Y.; McGill T. C.
Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures
28.
Minority carrier diffusion length and lifetime in GaN
29.
Bandić Z. Z.; Piquette E. C.; McCaldin J. O.; McGill T. C.
Solid phase recrystallization of ZnS thin films on sapphire
30.
Bandić Z. Z.; McGill T. C.; Ikonić Z.
Electronic structure of GaN stacking faults
31.
Piquette E. C.; Bandić Z. Z.; McCaldin J. O.; McGill T. C.
Growth and characterization of light emitting ZnS/GaN heterostructures
32.
Daniel E. S.; Jones J. T.; Marsh O. J.; McGill T. C.
Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress
33.
Cheng X.-C.; Collins D. A.; McGill T. C.
Mapping of AlxGa1-x;As band edges by ballistic electron emission spectroscopy
34.
Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy
35.
Liu Y. X.; Marquardt R. R.; Ting D. Z.-Y.; McGill T. C.
Magnetotunneling in interband tunnel structures
36.
Liu Y. X.; Ting D. Z.-Y.; McGill T. C.
Efficient, numerically stable multiband k∙;p treatment of quantum transport in semiconductor heterostructures
37.
Pettersson P. O.; Ahn C. C.; McGill T. C.; Croke E. T.; Hunter A. T.
Characterization of Si/Si1-;yCy superlattices grown by surfactant assisted molecular beam epitaxy
38.
Bandić Z. Z.; McGill T. C.; Hauenstein R. J.; O'Steen M. L.
Microscopic processes during electron cyclotron resonance microwave nitrogen plasma‐assisted molecular beam epitaxial growth of GaN/GaAs heterostructures; Experiments and kinetic modeling
39.
Interface roughness effects on transport in tunnel structures
40.
Marquardt R. R.; Collins D. A.; Liu Y. X.; Ting D. Z.-Y.; McGill T. C.
Resonant magnetotunneling spectroscopy of p‐type‐well interband tunneling diodes
41.
Bandić Z. Z.; Hauenstein R. J.; O'Steen M. L.; McGill T. C.
Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxial growth of GaN/GaAs‐based heterostructures
42.
Lin J.-L.; Freiler M. B.; Levy M.; Osgood R. M.; Collins D.; McGill T. C.
Photon‐assisted cryoetching of III–V binary compounds by Cl;2 at 193 nm
43.
Sb‐surfactant‐mediated growth of Si/Si;1-;yCy superlattices by molecular‐beam epitaxy
44.
Collins D. A.; Papa G. O.; McGill T. C.
Real‐time extraction of growth rates from rotating substrates during molecular‐beam epitaxy
45.
Wang M. W.; Collins D. A.; McGill T. C.; Grant R. W.; Feenstra R. M.
Study of interface asymmetry in InAs–GaSb heterojunctions
46.
Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset
47.
Hauenstein R. J.; Collins D. A.; Cai X. P.; O'Steen M. L.; McGill T. C.
Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface
48.
Wang M. W.; McCaldin J. O.; Swenberg J. F.; McGill T. C.; Hauenstein R. J.
Schottky‐based band lineups for refractory semiconductors
49.
Pettersson P. O.; Miles R. J.; McGill T. C.
Surface morphology of silicon grown on CaF2/Si by electron‐beam‐assisted molecular‐beam epitaxy
50.
Kirby S. K.; Ting D. Z.-Y.; McGill T. C.
Atomic‐scale imperfections and fluctuations in the transmission properties of a quantum dot
51.
Feenstra R. M.; Collins D. A.; Ting D. Z.-Y.; Wang M. W.; McGill T. C.
Scanning tunneling microscopy of InAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry
52.
Wang M. W.; Swenberg J. F.; Phillips M. C.; Yu E. T.; McCaldin J. O.; Grant R. W.; McGill T. C.
X‐ray photoelectron spectroscopy measurement of valence‐band offsets for Mg‐based semiconductor compounds
53.
Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy
54.
Ting D. Z.-Y.; Kirby S. K.; McGill T. C.
Interface roughness effects in resonant tunneling structures
55.
Collins D. A.; Wang M. W.; Grant R. W.; McGill T. C.
Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces
56.
Reflection high energy electron diffraction observation of anion exchange reactions on InAs surfaces
57.
Neutral impurities in tunneling structures
58.
Three‐dimensional simulations of quantum transport in semiconductor nanostructures
59.
Wang M. W.; McGill T. C.; Collins D. A.; Grant R. W.
X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface
60.
Wang M. W.; Phillips M. C.; Swenberg J. F.; Yu E. T.; McCaldin J. O.; McGill T. C.
n‐CdSe/;p‐ZnTe based wide band‐gap light emitters; Numerical simulation and design
61.
Γ‐;X interference effects on quasi‐bound‐state lifetimes in GaAs/AlAs double‐barrier heterostructures
62.
Yu E. T.; Phillips M. C.; Chow D. H.; Collins D. A.; Wang M. W.; McCaldin J. O.; McGill T. C.
Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system
63.
McCaldin J. O.; McGill T. C.
Comment on ‘‘Empirical fit to band discontinuities and barrier heights in III‐V alloy systems’’
64.
Phillips M. C.; Wang M. W.; Swenberg J. F.; McCaldin J. O.; McGill T. C.
Proposal and verification of a new visible light emitter based on wide band gap II‐VI semiconductors
65.
Liu Y. X.; Wang M. W.; McCaldin J. O.; McGill T. C.
Schottky barrier induced injecting contact on wide band gap semiconductors
66.
Effect of Γ–;X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures
67.
Collins D. A.; Fu T. C.; McGill T. C.; Chow D. H.
Reflection high‐energy electron diffraction studies of the growth of InAs/Ga;1-;xInxSb strained‐layer superlattices
68.
Ting D. Z.-Y.; Yu E. T.; McGill T. C.
Multiband treatment of quantum transport in interband tunnel devices
69.
Effect of band mixing on hole‐tunneling times in GaAs/AlAs double‐barrier heterostructures
70.
Band structure effects in interband tunnel devices
71.
Croke E. T.; Hauenstein R. J.; Fu T. C.; McGill T. C.
Observation of a (2×8) surface reconstruction on Si;1-;xGex alloys grown on (100) Si by molecular‐beam epitaxy
72.
Yu E. T.; McCaldin J. O.; Phillips M. C.; McGill T. C.
Measurement of the CdSe/ZnTe valence band offset by x‐ray photoelectron spectroscopy
73.
Brown E. R.; Söderström J. R.; Parker C. D.; Mahoney L. J.; Molvar K. M.; McGill T. C.
Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
74.
Collins D. A.; Chow D. H.; McGill T. C.
Experimental observation of large room‐temperature current gains in a Stark effect transistor
75.
Jackson M. K.; Söderström J. R.; Collins D. A.; Chow D. H.; Ting D. Z.-Y.; McGill T. C.
Effect of the X point on the escape of electrons from the quantum well of a double‐barrier heterostructure
76.
Role of heavy‐hole states in interband tunnel structures
77.
Söderström J. R.; Brown E. R.; Parker C. D.; Mahoney L. J.; Yao J. Y.; Andersson T. G.; McGill T. C.
Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes
78.
Yu E. T.; Collins D. A.; Ting D. Z.-Y.; Chow D. H.; McGill T. C.
Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices
79.
Rossi T. M.; Collins D. A.; Chow D. H.; McGill T. C.
p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon
80.
Chow D. H.; Yu E. T.; Söderström J. R.; Ting D. Z.-Y.; McGill T. C.
Negative differential resistance due to resonant interband tunneling of holes
81.
Ting D. Z.-Y.; Collins D. A.; Yu E. T.; Chow D. H.; McGill T. C.
Large peak current densities in novel resonant interband tunneling heterostructures
82.
Miles R. H.; Chow D. H.; Schulman J. N.; McGill T. C.
Infrared optical characterization of InAs/Ga1-;xInxSb superlattices
83.
Collins D. A.; Yu E. T.; Rajakarunanayake Y.; Söderström J. R.; Ting D. Z.-Y.; Chow D. H.; McGill T. C.
Experimental observation of negative differential resistance from an InAs/GaSb interface
84.
Söderström J. R.; Yu E. T.; Jackson M. K.; Rajakarunanayake Y.; McGill T. C.
Two‐band modeling of narrow band gap and interband tunneling devices
85.
Rajakarunanayake Y.; McGill T. C.
Intersubband absorption in Si1-;xGex/Si superlattices for long wavelength infrared detectors
86.
Yu E. T.; Croke E. T.; Chow D. H.; Collins D. A.; Phillips M. C.; McGill T. C.; McCaldin J. O.; Miles R. H.
Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)
87.
Ting D. Z.-Y.; Yu E. T.; Collins D. A.; Chow D. H.; McGill T. C.
Modeling of novel heterojunction tunnel structures
88.
Chow D. H.; Miles R. H.; Söderström J. R.; McGill T. C.
InAs/Ga1-;xInxSb strained‐layer superlattices grown by molecular‐beam epitaxy
89.
Growth and characterization of InAs/Ga1-;xInxSb strained‐layer superlattices
90.
Yu E. T.; Croke E. T.; McGill T. C.; Miles R. H.
Measurement of the valence‐band offset in strained Si/Ge (100) heterojunctions by x‐ray photoelectron spectroscopy
91.
Croke E. T.; McGill T. C.; Hauenstein R. J.; Miles R. H.
Evidence of segregation in (100) strained Si1-;xGex alloys grown at low temperature by molecular beam epitaxy
92.
Wu G. Y.; McGill T. C.
Effects of barrier phonons on the tunneling current in a double‐barrier structure
93.
Söderström J. R.; Chow D. H.; McGill T. C.
Observation of large peak‐to‐valley current ratios and large peak current densities in AlSb/InAs/AlSb double‐barrier tunnel structures
94.
Si‐Si;1-;xGexn‐type resonant tunnel structures
95.
Demonstration of large peak‐to‐valley current ratios in InAs/AlGaSb/InAs single‐barrier heterostructures
96.
Rajakarunanayake Y.; Cole B. H.; McCaldin J. O.; Chow D. H.; Söderström J. R.; McGill T. C.; Jones C. M.
Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe
97.
New negative differential resistance device based on resonant interband tunneling
98.
Jackson M. K.; Miles R. H.; McGill T. C.; Faurie J. P.
Raman scattering determination of strain in CdTe/ZnTe superlattices
99.
Yu E. T.; Jackson M. K.; McGill T. C.
Hole tunneling times in GaAs/AlAs double‐barrier structures
100.
Band structure and optical properties of Si‐Si;1-;xGex superlattices
101.
Johnson M. B.; McGill T. C.; Hunter A. T.
Space‐ and time‐resolved photoluminescence of In‐alloyed GaAs using photoluminescence excitation correlation spectroscopy
102.
Strain effects and optical properties of Si1-;xGex/Si superlattices
103.
Hauenstein R. J.; Croke E. T.; Marsh O. J.; Miles R. H.; Clemens B. M.; McGill T. C.
Strain relaxation kinetics in Si1-;xGex/Si heterostructures
104.
Miles R. H.; McGill T. C.
Structural perfection in poorly lattice matched heterostructures
105.
X‐point tunneling in AlAs–GaAs–AlAs double barrier heterostructures
106.
Johnson M. B.; McGill T. C.; Paulter N. G.
Carrier lifetimes in ion‐damaged GaAs
107.
Wu G. Y.; McGill T. C.; Mailhiot C.; Smith D. L.
k∙;p theory of semiconductor superlattice electronic structure in an applied magnetic field
108.
Yu E. T.; Chow D. H.; McGill T. C.
Commutativity of the GaAs/AlAs (100) band offset
109.
Jackson M. K.; Johnson M. B.; Chow D. H.; McGill T. C.; Nieh C. W.
Electron tunneling time measured by photoluminescence excitation correlation spectroscopy
110.
Boudville W. J.; McGill T. C.
Finite‐size effects in two‐dimensional continuum percolation
111.
Johnson N. F.; Ehrenreich H.; Wu G. Y.; McGill T. C.
Superlattice k∙;p models for calculating electronic structure
112.
Commutativity of the GaAs/AlAs(100) band offset
113.
Croke E. T.; Hauenstein R. J.; McGill T. C.
Growth of superconducting V3Si on Si by molecular beam epitaxial techniques
114.
Yu E. T.; McGill T. C.
III‐V/II‐VI double‐barrier resonant tunneling structures
115.
Miles R. H.; Chow P. P.; Johnson D. C.; Hauenstein R. J.; Marsh O. J.; Nieh C. W.; Strathman M. D.; McGill T. C.
Accommodation of lattice mismatch in GexSi1-;x/Si superlattices
116.
Proposal of a new visible light emitting structure: n‐AlSb/;p‐ZnTe heterojunctions
117.
Rajakarunanayake Y.; Miles R. H.; Wu G. Y.; McGill T. C.
Band offset of the ZnSe–ZnTe superlattices; A fit to photoluminescence data by ;k∙;p theory
118.
Chow D. H.; Shirland F. A.; Faurie J. P.; Sou I. K.; McGill T. C.; Bonnefoi A. R.; McCaldin J. O.; Wu O. K.
Electrical studies of single‐barrier Hg;1-;xCdxTe heterostructures
119.
Band structure of ZnSe‐ZnTe superlattices
120.
Bonnefoi A. R.; McGill T. C.; Burnham R. D.
Resonant tunneling through GaAs quantum‐well energy levels confined by Al;xGa1-;xAs Γ;‐ and ;X‐point barriers
121.
Scale dependence of resistance fluctuations at metal‐semiconductor junctions
122.
Picosecond time‐resolved photoluminescence using picosecond excitation correlation spectroscopy
123.
Miles R. H.; McGill T. C.; Chow P. P.; Johnson D. C.; Hauenstein R. J.; Nieh C. W.; Strathman M. D.
Dependence of critical thickness on growth temperature in GexSi1-;x/Si superlattices
124.
Chow D. H.; McGill T. C.; Sou I. K.; Faurie J. P.; Nieh C. W.
Observation of negative differential resistance from a single barrier heterostructure
125.
Chow D. H.; McCaldin J. O.; Bonnefoi A. R.; McGill T. C.; Sou I. K.; Faurie J. P.
Electrical determination of the valence‐band discontinuity in HgTe‐CdTe heterojunctions
126.
Johnson N. F.; Ehrenreich H.; Hass K. C.; McGill T. C.
f‐sum rule and effective masses in superlattices
127.
Woodward T. K.; McGill T. C.; Chung H. F.; Burnham R. D.
Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor
128.
Bonnefoi A. R.; Chow D. H.; McGill T. C.
Energy‐band diagrams and current‐voltage characteristics of single‐barrier tunnel structures
129.
Wu G. Y.; McGill T. C.; Smith D. L.; Mailhiot C.
Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field
130.
Self‐consistent solutions of electronic wave functions at GaAs–Al;xGa1-;xAs interfaces
131.
Miles R. H.; McGill T. C.; Sivananthan S.; Chu X.; Faurie J. P.
Structure of CdTe/ZnTe superlattices
132.
Woodward T. K.; McGill T. C.; Burnham R. D.
Experimental realization of a resonant tunneling transistor
133.
Bonnefoi A. R.; McGill T. C.; Burnham R. D.; Anderson G. B.
Observation of resonant tunneling through GaAs quantum well states confined by AlAs X‐point barriers
134.
Wu G. Y.; Smith D. L.; Mailhiot C.; McGill T. C.
Theoretical study of the electronic properties of semimagnetic superlattices
135.
Photoresponse of asymmetrically doped GaAs‐AlAs heterostructures under external bias
136.
Bonnefoi A. R.; Chow D. H.; McGill T. C.; Burnham R. D.; Ponce F. A.
Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition
137.
Electrical behavior of GaAs–AlAs heterostructures
138.
Baukus J. P.; Hunter A. T.; Marsh O. J.; Jones C. E.; Wu G. Y.; Hetzler S. R.; McGill T. C.; Faurie J. P.
Infrared absorption measurement and analysis of HgTe–CdTe superlattices
139.
McGill T. C.; Wu G. Y.; Hetzler S. R.
Superlattices: Progress and prospects
140.
Chow D. H.; McGill T. C.
Negative differential resistances from Hg1-;xCdxTe‐CdTe single quantum barrier heterostructures
141.
Miles R. H.; Wu G. Y.; Johnson M. B.; McGill T. C.; Faurie J. P.; Sivananthan S.
Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices
142.
Hauenstein R. J.; Hunt B. D.; McGill T. C.; Schlesinger T. E.; Schowalter L. J.
Schottky barrier height measurements of type‐A and type‐B NiSi;2 epilayers on Si
143.
Resistance fluctuations in ohmic contacts due to discreteness of dopants
144.
Hauenstein R. J.; Schlesinger T. E.; McGill T. C.; Hunt B. D.; Schowalter L. J.
Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si
145.
Band offsets and the optical properties of HgTe‐CdTe superlattices
146.
Inverted base‐collector tunnel transistors
147.
Schottky barrier height measurements of epitaxial NiSi2 on Si
148.
Strain effects in HgTe‐CdTe superlattices grown on CdTe substrates
149.
Woodward T. K.; Schlesinger T. E.; McGill T. C.; Burnham R. D.
Capacitance‐voltage characteristics of GaAs‐AlAs heterostructures
150.
Uniformity in the electrical characteristics of GaAs/AlAs tunnel structures grown by metalorganic chemical vapor deposition
151.
Hetzler S. R.; Baukus J. P.; Hunter A. T.; Faurie J. P.; Chow P. P.; McGill T. C.
Infrared photoluminescence spectra from HgTe‐CdTe superlattices
152.
Schlesinger T. E.; Collins R. T.; McGill T. C.; Burnham R. D.
Optical investigations of electron transport through GaAs/AlAs heterostructures
153.
Johnson M. B.; McCaldin J. O.; Zur A.; McGill T. C.
Summary Abstract: Band offsets at HgTe CdTe interfaces
154.
Ohmic contacts to n‐type GaAs
155.
Schlesinger T. E.; Zur A.; McGill T. C.; Burnham R. D.
Photoresponse of GaAs/AlAs heterostructures under external bias
156.
Zur A.; McGill T. C.
Theoretical investigation of the effect of strain on phase separation in epitaxial layers
157.
Bonnefoi A. R.; Collins R. T.; McGill T. C.; Burnham R. D.; Ponce F. A.
Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition
158.
Zur A.; McGill T. C.; Nicolet M-A.
Transition‐metal silicides lattice‐matched to silicon
159.
Wu G. Y.; Mailhiot C.; McGill T. C.
Optical properties of HgTe‐CdTe superlattices
160.
Prabhakar A.; McGill T. C.
Thermally induced transition metal contamination of silicide Schottky barriers on silicon
161.
Photovoltaic investigations of GaAs/AlAs heterostructures
162.
Collins R. T.; McGill T. C.; Lambe J.; Burnham R. D.
Summary Abstract: Elastic and inelastic tunneling characteristics of AlAs/GaAs heterojunctions
163.
Band offsets, defects, and dipole layers in semiconductor heterojunctions
164.
Mailhiot C.; McGill T. C.; Smith D. L.
New approach to the k∙ ;p theory of semiconductor superlattices
165.
Hetzler S. R.; McGill T. C.; Hunter A. T.
Selective excitation luminescence and electronic Raman scattering study of the 78‐meV acceptor in GaAs
166.
Collins R. T.; Lambe J.; McGill T. C.; Burnham R. D.
Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunction barriers
167.
Inelastic tunneling characteristics of AlAs/GaAs heterojunctions
168.
Hauenstein R. J.; McGill T. C.; Feenstra R. M.
Vibrational modes of oxygen in GaP including second‐nearest‐neighbor interactions
169.
Lattice match: An application to heteroepitaxy
170.
Prabhakar A.; McGill T. C.; Nicolet M-A.
Platinum diffusion into silicon from PtSi
171.
Feenstra R. M.; Hauenstein R. J.; McGill T. C.
Vibrational modes of oxygen in GaP including nearest‐neighbor interactions
172.
Schlesinger T. E.; McGill T. C.
Isotope‐shift experiments on luminescence attributed to (Fe,B) pairs in silicon
173.
Zur A.; McGill T. C.; Smith D. L.
Fermi‐level position at a semiconductor‐metal interface
174.
Smith D. L.; McGill T. C.; Schulman J. N.
Advantages of the HgTe‐CdTe superlattice as an infrared detector material
175.
Mailhiot C.; Smith D. L.; McGill T. C.
Transport characteristics of L‐point and Γ‐point electrons through GaAs–Ga;1-;xAlxAs–GaAs(111) double heterojunctions
176.
Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface
177.
Collins R. T.; McGill T. C.
Electronic properties of deep levels in p‐type CdTe
178.
Mailhiot C.; McGill T. C.; Schulman J. N.
Tunneling and propagating transport in GaAs–Ga;1-;xAlxAs–GaAs(100) double heterojunctions
179.
McGill T. C.; Smith D. L.
Summary Abstract: HgTe–CdTe superlattices
180.
Mailhiot C.; Chang Yia-Chung; McGill T. C.
Energy spectra of donors in GaAs‐Ga;1-;xAlxAs quantum well structures in the effective‐mass approximation
181.
Feenstra R. M.; McGill T. C.
Periodicity in the undulation spectra of GaP:N
182.
Redondo Antonio; Goddard William A.; McGill T. C.
Mott insulator model of the Si(111)–(2×1) surface
183.
Energy spectra of donors in GaAs–Ga;1-;xAlxAs quantum well structures in the effective mass approximation
184.
Summary Abstract: Mott insulator model of the Si(111)‐(2×1) surface
185.
Role of Fe in new luminescence lines in Si:Tl and Si:In
186.
Reaction kinetics in GaP:(Zn,O)
187.
Hunter A. T.; McGill T. C.
Luminescence studies of HgCdTe alloys
188.
Swarts C. A.; Daw M. S.; McGill T. C.
Bulk vacancies in CdxHg1-;xTe
189.
Collins R. T.; Kuech T. F.; McGill T. C.
A DLTS study of deep levels in n‐type CdTe
190.
Mitchard G. S.; McGill T. C.
Photoluminescence of Si‐rich Si‐Ge Alloys
191.
Chang Yia-Chung; McGill T. C.
Theory of multiexciton complexes bound to donors in multivalley semiconductors
192.
Theory of fine‐structure splittings for donor bound excitons in indirect materials
193.
Theory of D-; states in Ge and Si
194.
James R. B.; Schweig Edgard; Smith D. L.; McGill T. C.
Experimental investigation of the infrared absorption saturation in p‐type germanium and silicon
195.
Selective excitation luminescence in bulk‐grown GaAs
196.
Erratum: Luminescence from HgCdTe alloys [J. Appl. Phys. ;52, 5779 (1981)]
197.
Redondo A.; Goddard W. A.; McGill T. C.
Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters
198.
Valley‐orbit splittings for the donor states in GaP
199.
Defect reactions in GaP:(Zn,O)
200.
Swarts C. A.; Goddard W. A.; McGill T. C.
Geometry of the abrupt (110) Ge/GaAs interface
201.
Daw M. S.; Smith D.L.; Swarts C.A.; McGill T.C.
Surface vacancies in II–VI and III–V zinc blende semiconductors
202.
Redondo A.; Goddard W. A.; Swarts C. A.; McGill T. C.
Oxidation of silicon surfaces
203.
Daw M. S.; Smith D. L.; McGill T. C.
Summary Abstract: Surface core excitons in III–V semiconductors
204.
Core to surface excitations on GaAs(110)
205.
Luminescence from HgCdTe alloys
206.
Chang Yia-Chung; McGill T. C.; Smith D. L.
Model Hamiltonian of donors in indirect‐gap materials
207.
Schulman J. N.; McGill T. C.
Complex band structure and superlattice electronic states
208.
Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system
209.
Swarts C. A.; Goddard III W. A.; McGill T. C.
Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds
210.
Swarts C. A.; Goddard III W. A.; Barton J. J.; McGill T. C.
Chemisorption of Al and Ga on the GaAs (110) surface
211.
Summary Abstract: Localization of superlattice electronic states and complex bulk band structures
212.
Chang Y. C.; McGill T. C.
Excitation spectra of bound excitons and bound multiexciton complexes in n‐type Si
213.
Hunter A. T.; Smith D. L.; McGill T. C.
Near‐band‐gap photoluminescence of Hg;1-;xCdxTe
214.
Pan D. S.; Smith D. L.; McGill T. C.
Concentration broadening of bound‐exciton spectral lines
215.
Elliott K. R.; McGill T. C.
Excited states of donor bound excitons in GaP
216.
Barton John J.; Goddard William A.; Swarts Coenraad A.; McGill T. C.
Chemisorption of oxygen and aluminum on the GaAs (110) surface from abinitio theory
30
Chow, David H.
20
Yu, Edward T.
12
Bandić, ZZ
10
Bridger, PM
9
Piquette, EC
7
Chang, Yia-Chung
Goddard, William A.
6
Beach, RA
5
Cheng, X.-C.
4
Redondo, Antonio
Hill, Cory J.
3
Cartoixà, Xavier
Preisler, EJ
Strittmatter, RP
Picus, GS