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Matsuda, Sumio

Computed

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Research Profile

Latest Publications

1.
2003

Soga Tetsuo; Chandrasekaran Nallathambi; Imaizumi Mitsuru; Inuzuka Yousuke; Taguchi Hironori; Jimbo Takashi; Matsuda Sumio

High‐Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
Jpn. J. Appl. Phys., Part 2 42, L1054 (2003)
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466‐8555, Japan;
2.
2003

Matsuura Hideharu; Ishida Takuya; Kirihataya Taishi; Anzawa Osamu; Matsuda Sumio

Annealing Behavior of Donorlike Defects Induced by High‐Fluence Irradiation of High‐Energy Particles in p‐Type Silicon
Jpn. J. Appl. Phys., Part 1 42, 5187 (2003)
Department of Electronic Engineering and Computer Science, Osaka Electro‐Communication University, 18‐8 Hatsu‐cho, Neyagawa, Osaka 572‐8530, Japan;
3.
2002

Kawakita Shirou; Imaizumi Mitsuru; Yamaguchi Masafumi; Kushiya Katsumi; Ohshima Takeshi; Itoh Hisayoshi; Matsuda Sumio

Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin‐Film Solar Cells
Jpn. J. Appl. Phys., Part 2 41, L797 (2002)
National Space Development Agency of Japan, 2‐1‐1 Sengen, Tsukuba, Ibaraki 305‐8505, Japan;

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All Publications

1.
2003

Soga Tetsuo; Chandrasekaran Nallathambi; Imaizumi Mitsuru; Inuzuka Yousuke; Taguchi Hironori; Jimbo Takashi; Matsuda Sumio

High‐Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
Jpn. J. Appl. Phys., Part 2 42, L1054 (2003)
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466‐8555, Japan;
2.
2003

Matsuura Hideharu; Ishida Takuya; Kirihataya Taishi; Anzawa Osamu; Matsuda Sumio

Annealing Behavior of Donorlike Defects Induced by High‐Fluence Irradiation of High‐Energy Particles in p‐Type Silicon
Jpn. J. Appl. Phys., Part 1 42, 5187 (2003)
Department of Electronic Engineering and Computer Science, Osaka Electro‐Communication University, 18‐8 Hatsu‐cho, Neyagawa, Osaka 572‐8530, Japan;
3.
2002

Kawakita Shirou; Imaizumi Mitsuru; Yamaguchi Masafumi; Kushiya Katsumi; Ohshima Takeshi; Itoh Hisayoshi; Matsuda Sumio

Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin‐Film Solar Cells
Jpn. J. Appl. Phys., Part 2 41, L797 (2002)
National Space Development Agency of Japan, 2‐1‐1 Sengen, Tsukuba, Ibaraki 305‐8505, Japan;
4.
2002

Dharmarasu Nethaji; Yamaguchi Masafumi; Bourgoin Jacques C.; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

Majority- and minority-carrier deep level traps in proton-irradiated n⁺/p-InGaP space solar cells
Appl. Phys. Lett. 81, 64 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
5.
2002

Dharmarasu Nethaji; Khan A.; Yamaguchi Masafumi; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

Effects of proton irradiation on n⁺p InGaP solar cells
J. Appl. Phys. 91, 3306 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
6.
2001

Dharmarasu Nethaji; Yamaguchi Masafumi; Khan Aurangzeb; Yamada Takashi; Tanabe Tatsuya; Takagishi Shigenori; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
Appl. Phys. Lett. 79, 2399 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
7.
2001

Khan Aurangzeb; Yamaguchi Masafumi; Ohshita Y.; Imaizumi M.; Ohshima T.; Itoh Hisayoshi; Abe Takao; Araki K.; Dharmarasu N.; Matsuda S.

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
J. Appl. Phys. 90, 1170 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
8.
2001

Khan Aurangzeb; Imaizumi Mitsuru; Ohshima Takeshi; Itoh Hisayoshi; Takagishi Shigenori; Tanabe Tatsuya; Yamada Takashi; Dharmaras Nathaji; Yamaguchi Masafumi; Matsuda Sumio

Radiation Resistant Low Bandgap InGaAsP Solar Cell for Multi-Junction Solar Cells
Jpn. J. Appl. Phys., Part 2 40, L728 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
9.
2000

Khan Aurangzeb; Annzawa Osamu; Abe Takao; Saga Tatsue; Kaneiwa Minoru; Yamaguchi Masafumi; Matsuda Sumio

Erratum: “Influence of the dopant species on radiation-induced defects in Si single crystals” [J. Appl. Phys. ;87, 8389 (2000)]
J. Appl. Phys. 88, 3785 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
10.
2000

Khan Aurangzeb; Annzawa Osamu; Abe Takao; Saga Tatsue; Kaneiwa Minoru; Yamaguchi Masafumi; Matsuda Sumio

Influence of the dopant species on radiation-induced defects in Si single crystals
J. Appl. Phys. 87, 8389 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
11.
2000

Matsuura Hideharu; Uchida Yoshitsugu; Nagai Naoto; Hisamatsu Tadashi; Aburaya Takashi; Matsuda Sumio

Temperature dependence of electron concentration in type-converted silicon by 1×10;¹⁷ ;cm^-2; fluence irradiation of 1 MeV electrons
Appl. Phys. Lett. 76, 2092 (2000)
Department of Electronics, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan;
12.
2000

Khan Aurangzeb; Yamaguchi Masafumi; Hisamatsu Tadashi; Matsuda Sumio

Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation
J. Appl. Phys. 87, 2162 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
13.
1999

Yamaguchi Masafumi; Khan Aurangzeb; Taylor Stephen J.; Ando Koshi; Yamaguchi Tsutomu; Matsuda Sumio; Aburaya Takashi

Deep level analysis of radiation-induced defects in Si crystals and solar cells
J. Appl. Phys. 86, 217 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8611, Japan
14.
1999

Khan Aurangzeb; Yamaguchi Masafumi; Taylor Stephen J.; Hisamatsu Tadashi; Matsuda Sumio

Effects of annealing on type converted Si and space solar cells irradiated with heavy fluence 1 MeV electrons
Jpn. J. Appl. Phys., Part 1 38, 2679 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
15.
1999

Imaizumi Mitsuru; Taylor Stephen J.; Yamaguchi Masafumi; Ito Tadashi; Hisamatsu Tadashi; Matsuda Sumio

Analysis of structure change of Si solar cells irradiated with high fluence electrons
J. Appl. Phys. 85, 1916 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan;
16.
1998

Matsuura Hideharu; Uchida Yoshitsugu; Hisamatsu Tadashi; Matsuda Sumio

Evaluation of hole traps in 10-MeV proton-irradiated p-type silicon from Hall-effect measurements
Jpn. J. Appl. Phys., Part 1 37, 6034 (1998)
Department of Electronics, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan;
17.
1998

Taylor S. J.; Yamaguchi M.; Yamaguchi T.; Watanabe S.; Ando K.; Matsuda S.; Hisamatsu T.; Kim S. I.

Comparison of the effects of electron and proton irradiation on n⁺–p–p;⁺ silicon diodes
J. Appl. Phys. 83, 4620 (1998)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan;
18.
1998

Yamaguchi T.; Taylor S. J.; Watanabe S.; Ando K.; Yamaguchi M.; Hisamatsu T.; Matsuda S.

Explanation for carrier removal and type conversion in irradiated silicon solar cells
Appl. Phys. Lett. 72, 1226 (1998)
Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, Japan;
19.
1997

Taylor S. J.; Yamaguchi M.; Matsuda S.; Hisamatsu T.; Kawasaki O.

Investigation of carrier removal in electron irradiated silicon diodes
J. Appl. Phys. 82, 3239 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
20.
1997

Morita Yousuke; Kawasaki Osamu; Yamamoto Yasunari; Nashiyama Isamu; Ohshima Takeshi; Matsuda Sumio

Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations
J. Appl. Phys. 81, 6491 (1997)
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-12, Japan
21.
1997

Taylor Stephen J.; Yamaguchi Masafumi; Yang Ming-Ju; Imaizumi Mitsuru; Matsuda Sumio; Kawasaki Osamu; Hisamatsu Tadashi

Type conversion in irradiated silicon diodes
Appl. Phys. Lett. 70, 2165 (1997)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
22.
1996

Yamaguchi Masafumi; Taylor Stephen J.; Yang Ming-Ju; Matsuda Sumio; Kawasaki Osamu; Hisamatsu Tadashi

High‐energy and high‐fluence proton irradiation effects in silicon solar cells
J. Appl. Phys. 80, 4916 (1996)
Toyota Technological Institute, 2‐12 Hisakata, Tempaku, Nagoya 468, Japan;
23.
1996

Yamaguchi Masafumi; Taylor Stephen J.; Matsuda Sumio; Kawasaki Osamu

Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation
Appl. Phys. Lett. 68, 3141 (1996)
Toyota Technological Institute, 2‐12 Hisakata, Tempaku, Nagoya 468, Japan;

Co-authors

Co-publications
18

Yamaguchi, Masafumi
10

Hisamatsu, Tadashi
9

Imaizumi, Mitsuru
9

Taylor, Stephen J.
9

Khan, Aurangzeb
7

Ohshima, Takeshi
6

Itoh, Hisayoshi
4

Dharmarasu, Nethaji
3

Matsuura, Hideharu
3

Takamoto, Tatsuya
3

Ando, Koshi
2

Takagishi, Shigenori
2

Abe, Takao
2

Saga, Tatsue
2

Tanabe, Tatsuya