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Mendez, EE

Computed

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Research Profile

Latest Publications

1.
2007

Mendez E. E.; Newaz A. K. M.; Song W.; Nielsen B.

Non‐Poissonian Shot Noise in Tunneling Semiconductor Heterostructures
AIP Conf. Proc. 922, 177 (2007)
State University of New York at Stony Brook, Stony Brook, NY 11794‐3800;
2.
2007

Mendez E. E.; Newaz A. K. M.; Song W.; Nielsen B.; Hey R.; Kostial H.; Grahn H. T.

Can Shot‐Noise Measurements Distinguish Between Coherent and Sequential Tunneling?
AIP Conf. Proc. 893, 533 (2007)
State University of New York at Stony Brook, Stony Brook, NY 11794‐3800;
3.
2006

Song W.; Son J. K.; Newaz A. K. M.; Mendez E. E.

Drastic Reduction of Shot Noise in Semiconductor Superlattices
Phys. Rev. Lett. 96, 126803 (2006)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800, USA

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All Publications

1.
2007

Mendez E. E.; Newaz A. K. M.; Song W.; Nielsen B.

Non‐Poissonian Shot Noise in Tunneling Semiconductor Heterostructures
AIP Conf. Proc. 922, 177 (2007)
State University of New York at Stony Brook, Stony Brook, NY 11794‐3800;
2.
2007

Mendez E. E.; Newaz A. K. M.; Song W.; Nielsen B.; Hey R.; Kostial H.; Grahn H. T.

Can Shot‐Noise Measurements Distinguish Between Coherent and Sequential Tunneling?
AIP Conf. Proc. 893, 533 (2007)
State University of New York at Stony Brook, Stony Brook, NY 11794‐3800;
3.
2006

Song W.; Son J. K.; Newaz A. K. M.; Mendez E. E.

Drastic Reduction of Shot Noise in Semiconductor Superlattices
Phys. Rev. Lett. 96, 126803 (2006)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800, USA
4.
2005

Mendez E. E.; Song W.; Newaz A. K. M.; Lin Y.; Nitta J.

Shot Noise Experiments in Multi‐barrier Semiconductor Heterostructures
AIP Conf. Proc. 780, 431 (2005)
State University of New York at Stony Brook,, Stony Brook, NY 11794‐3800;
5.
2005

Lin Y.; Nitta J.; Newaz A. K. M.; Song W.; Mendez E. E.

Unusual Tunneling Characteristics of Double‐quantum‐well Heterostructures
AIP Conf. Proc. 772, 549 (2005)
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243‐0198, Japan;
6.
2005

Newaz A. K. M.; Song W.; Mendez E. E.; Lin Y.; Nitta J.

Shot-noise characteristics of triple-barrier resonant-tunneling diodes
Phys. Rev. B 71, 195303 (2005)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800, USA
7.
2005

Chaldyshev V. V.; Nielsen B.; Mendez E. E.; Musikhin Yu. G.; Bert N. A.; Ma Zh.; Holden Todd

Zinc blende GaAs films grown on wurtzite GaN/sapphire templates
Appl. Phys. Lett. 86, 131916 (2005)
Brooklyn College of the City University of New York, Brooklyn, New York 11210, and Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
8.
2005

Camino F. E.; Guzenko V. A.; Schäpers Th.; Mendez E. E.; Kuznetsov V. V.; Hardtdegen H.

Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions
Phys. Rev. B 71, 020506 (2005)
Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, USA
9.
2003

Camino F. E.; Kuznetsov V. V.; Mendez E. E.; Gershenson M. E.; Reuter D.; Schafmeister P.; Wieck A. D.

Hopping conductivity beyond the percolation regime probed by shot-noise measurements
Phys. Rev. B 68, 073313 (2003)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800, USA;
10.
2003

Lin Y.; González E. M.; Mendez E. E.; Magno R.; Bennett B. R.; Bracker A. S.

Magnetotunneling between two-dimensional electron gases in InAs-AlSb-GaSb heterostructures
Phys. Rev. B 68, 035311 (2003)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800, USA;
11.
2003

Song W.; Mendez E. E.; Kuznetsov V.; Nielsen B.

Shot noise in negative-differential-conductance devices
Appl. Phys. Lett. 82, 1568 (2003)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800;
12.
2002

Lin Y.; Mendez E. E.; Abanov A. G.

Tunneling characteristics of an electron-hole trilayer in a parallel magnetic field
Phys. Rev. B 66, 195311 (2002)
Department of Physics and Astronomy, SUNY at Stony Brook, Stony Brook, NY 11794-3800
13.
2002

Dickerson J. H.; Son J. K.; Mendez E. E.; Allerman A. A.

Electric-field tuning of the Rabi splitting in a superlattice-embedded microcavity
Appl. Phys. Lett. 81, 803 (2002)
Department of Physics and Astronomy, SUNY at Stony Brook, Stony Brook, New York 11794-3800;
14.
2001

Pecharromán C.; Tao I. W.; Son J. K.; Mendez E. E.

Photoluminescence excitation spectroscopy of semiconductor microcavities
Phys. Rev. B 64, 245331 (2001)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800;
15.
2001

Dickerson J. H.; Agulló-Rueda F.; Manotas S.; Allerman A. A.; Mendez E. E.; Pecharromán C.

Enhancement of Rabi splitting in a microcavity with an embedded superlattice
Phys. Rev. B 64, 155302 (2001)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800;
16.
2001

González E. M.; Lin Y.; Mendez E. E.

Magnetotunneling in a two-dimensional electron-hole system near equilibrium
Phys. Rev. B 63, 033308 (2001)
Department of Physics and Astronomy, SUNY at Stony Brook, Stony Brook, New York 11794-3800
17.
2000

Kuznetsov V. V.; Mendez E. E.; Zuo X.; Snider G. L.; Croke E. T.

Partially Suppressed Shot Noise in Hopping Conduction: Observation in SiGe Quantum Wells
Phys. Rev. Lett. 85, 397 (2000)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800
18.
1999

Aichmayr G.; Jetter M.; Viña L.; Dickerson J.; Camino F.; Mendez E. E.

Electric-Field Tuning of Spin-Dependent Exciton-Exciton Interactions in Coupled Quantum Wells
Phys. Rev. Lett. 83, 2433 (1999)
Departamento de Fisica de Materiales C-IV, Universidad Autonoma de Madrid, Cantoblanco, E-28049 Madrid, Spain
19.
1998

Kuznetsov V. V.; Mendez E. E.; Bruno J. D.; Pham J. T.

Shot noise enhancement in resonant-tunneling structures in a magnetic field
Phys. Rev. B 58, R10159 (1998)
Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800
20.
1995

Jimenez J. L.; Mendez E. E.; Li X.; Wang W. I.

Intrinsic bistability by charge accumulation in an L‐valley state in GaSb‐AlSb resonant‐tunneling diodes
Phys. Rev. B 52, R5495 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
21.
1995

Jimenez J. L.; Mendez E. E.; Li X.; Wang W. I.

Resonant tunneling of L‐valley electrons in GaSb‐based double‐barrier heterostructures
Phys. Rev. B 51, 7938 (1995)
Department of Electrical Engineering, Columbia University, New York, New York 10027
22.
1993

Ogawa M.; Mendez E. E.

Feasibility of room‐temperature operation of tunable coupled‐quantum‐well lasers
Appl. Phys. Lett. 63, 2189 (1993)
IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
23.
1993

Mendez E. E.; Nocera J.; Wang W. I.

Oscillatory Landé factor of two‐dimensional electrons under high magnetic fields
Phys. Rev. B 47, 13937 (1993)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
24.
1992

Kash J. A.; Zachau M.; Mendez E. E.; Hong J. M.; Fukuzawa T.

Kash et al. reply
Phys. Rev. Lett. 69, 994 (1992)
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
25.
1992

Nelson S. F.; Ismail K.; Nocera J. J.; Fang F. F.; Mendez E. E.; Chu J. O.; Meyerson B. S.

Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
Appl. Phys. Lett. 61, 64 (1992)
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
26.
1992

Kash Jeffrey A.; Hong J. Minghuang; Mendez E. E.; Zachau M.; Fukuzawa Tadashi

Exciton thermodynamics in coupled quantum wells (Invited Paper)
Proc. SPIE Int. Soc. Opt. Eng. 1679, 73 (1992)
IBM Thomas J. Watson Research Ctr. (USA)
27.
1992

Liu L. Y.; Mendez E. E.; Meier H.

Tunable coupled‐quantum‐well laser controlled by an electric field
Appl. Phys. Lett. 60, 2971 (1992)
IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
28.
1992

Mendez E. E.; Nocera J.; Wang W. I.

Conservation of momentum, and its consequences, in interband resonant tunneling
Phys. Rev. B 45, 3910 (1992)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
29.
1991

Alexandrou A.; Sipe J. E.; Mendez E. E.; Dignam M. M.; Hong J. M.

Competition between magnetic‐field‐ and electric‐field‐induced localizations in GaAs/Ga;0.65Al0.35As superlattices
Phys. Rev. B 44, 13124 (1991)
IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
30.
1991

Ahn D.; Yoo T.-K.; Mendez E.; Chuang S. L.

Optical gain control model of the quantum‐well laser diode
J. Appl. Phys. 70, 5246 (1991)
GoldStar Central Research Laboratory, 16 Woomyeon‐Dong, Seocho‐Gu, Seoul 137‐140, Republic of Korea;
31.
1991

Alexandrou A.; Mendez E. E.; Hong J. M.

Interplay between Landau and Stark quantizations in GaAs/Ga0.65Al0.35As superlattices
Phys. Rev. B 44, 1934 (1991)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
32.
1991

Kash J. A.; Zachau M.; Mendez E. E.; Hong J. M.; Fukuzawa T.

Fermi‐Dirac distribution of excitons in coupled quantum wells
Phys. Rev. Lett. 66, 2247 (1991)
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
33.
1991

Mendez E. E.; Ohno H.; Esaki L.; Wang W. I.

Resonant interband tunneling via Landau levels in polytype heterostructures
Phys. Rev. B 43, 5196 (1991)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
34.
1990

Alexandrou A.; Kash J. A.; Mendez E. E.; Zachau M.; Hong J. M.; Fukuzawa T.; Hase Y.

Electric‐field effects on exciton lifetimes in symmetric coupled GaAs/Al;0.3Ga0.7As double quantum wells
Phys. Rev. B 42, 9225 (1990)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
35.
1990

Agulló-Rueda F.; Ohno H.; Mendez E. E.; Hong J. M.

Interactions between extended and localized states in superlattices
Phys. Rev. B 42, 1470 (1990)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
36.
1990

Fukuzawa T.; Mendez E. E.; Hong J. M.

Phase transition of an exciton system in GaAs coupled quantum wells
Phys. Rev. Lett. 64, 3066 (1990)
IBM Research, Tokyo Research Laboratory, Sanban‐cho, Tokyo 102, Japan;
37.
1990

Mendez E. E.; Agulló-Rueda F.; Hong J. M.

Temperature dependence of the electronic coherence of GaAs‐GaAlAs superlattices
Appl. Phys. Lett. 56, 2545 (1990)
IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
38.
1990

Ohno H.; Mendez E. E.; Brum J. A.; Hong J. M.; Agulló-Rueda F.; Chang L. L.; Esaki L.

Observation of ‘‘Tamm states’’ in superlattices
Phys. Rev. Lett. 64, 2555 (1990)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
39.
1990

Via L.; Bauer G. E. W.; Potemski M.; Maan J. C.; Mendez E. E.; Wang W. I.

Term spectrum of magnetoexcitons in quasi‐two‐dimensional systems
Phys. Rev. B 41, 10767 (1990)
Instituto de Ciencia de Materiales de Madrid del Consejo Superior de Investigaciones Científicas y Departamento de Física Aplicada (C‐IV), Universidad Autónoma, de Madrid, Ciudad Universitaria de Canto Blanco, E‐28049 Madrid, Spain;
40.
1990

Ohno H.; Mendez E. E.; Wang W. I.

Effects of carrier mass differences on the current‐voltage characteristics of resonant tunneling structures
Appl. Phys. Lett. 56, 1793 (1990)
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
41.
1990

Agulló-Rueda F.; Brum J. A.; Mendez E. E.; Hong J. M.

Change in dimensionality of superlattice excitons induced by an electric field
Phys. Rev. B 41, 1676 (1990)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
42.
1989

Beresford R.; Luo L. F.; Wang W. I.; Mendez E. E.

Resonant tunneling through X‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures
Appl. Phys. Lett. 55, 1555 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
43.
1989

Agulló-Rueda F.; Mendez E. E.; Hong J. M.

Quantum coherence in semiconductor superlattices
Phys. Rev. B 40, 1357 (1989)
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
44.
1989

Luo L. F.; Beresford R.; Wang W. I.; Mendez E. E.

Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double‐barrier heterostructures
Appl. Phys. Lett. 54, 2133 (1989)
Department of Electrical Engineering and Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027
45.
1988

Agulló-Rueda F.; Mendez E. E.; Hong J. M.

Doubly resonant Raman scattering induced by an electric field
Phys. Rev. B 38, 12720 (1988)
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
46.
1988

Via L.; Bauer G. E. W.; Potemski M.; Maan J. C.; Mendez E. E.; Wang W. I.

High‐angular‐momentum excitons in GaAs/Ga;1-;xAlxAs quantum wells
Phys. Rev. B 38, 10154 (1988)
Instituto de Ciencia de Materiales del Consejo Superior de Investigaciones Cientificas, Universidad de Zaragoza, 50009 Zaragoza, Spain
47.
1988

Mendez E. E.; Calleja E.; Wang W. I.

Inelastic tunneling in AlAs‐GaAs‐AlAs heterostructures
Appl. Phys. Lett. 53, 977 (1988)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
48.
1988

Gonçalves da Silva C. E. T.; Mendez E. E.

Resonant tunneling via Landau levels in GaAs‐Ga;1-;xAlxAs heterostructures
Phys. Rev. B 38, 3994 (1988)
Instituto de Fisica, Universidade de Campinas, Campinas 13100 São Paulo, São Pãulo, Brazil;
49.
1988

Mendez E. E.; Agulló-Rueda F.; Hong J. M.

Stark localization in GaAs‐GaAlAs superlattices under an electric field
Phys. Rev. Lett. 60, 2426 (1988)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
50.
1987

Tejedor C.; Staines M.; Wang W. I.; Mendez E. E.; Vina L.; Brey L.; Calleja J. M.; Cardona M.

Resonant Raman scattering in GaAs‐Ga;1-;xAlxAs quantum wells in an electric field
Phys. Rev. B 36, 6054 (1987)
Departamento de Fisica, Universidad Autonoma, Cantoblanco, 28049 Madrid, Spain
51.
1987

Beerens J.; Grégoris G.; Portal J. C.; Mendez E. E.; Chang L. L.; Esaki L.

GaSb‐InAs‐GaSb heterostructures studied under hydrostatic pressure
Phys. Rev. B 36, 4742 (1987)
Service National des Champs Intenses, Centre National de la Recherche Scientifique, Boite Postale 166X, 38042 Grenoble Cedex, France Appliquées, Université Paul Sabatier, Avenue de Rangueil, 31077 Toulouse Cedex, France;
52.
1987

Vina L.; Collins R. T.; Mendez E. E.; Wang W. I.

Vin~;a Iet al.P reply
Phys. Rev. Lett. 59, 602 (1987)
Instituto de Ciencia de Materiales, Universidad de ZaragozaConsejo Superior de Investigaciones Cientficas, 50009 Zaragoza, Spain
53.
1987

Mendez E. E.; Wang W. I.; Calleja E.; Gonçalves da Silva C. E. T.

Resonant tunneling via X‐point states in AlAs‐GaAs‐AlAs heterostructures
Appl. Phys. Lett. 50, 1263 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
54.
1987

Wang W. I.; Calleja E.; Mendez E. E.

Summary Abstract: Tunneling in AlAs/GaAs/AlAs heterostructures under hydrostatic pressure
J. Vac. Sci. Technol. B 5, 775 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
55.
1987

Via L.; Collins R. T.; Mendez E. E.; Wang and W. I.

Excitonic coupling in GaAs/GaAlAs quantum wells in an electric field
Phys. Rev. Lett. 58, 832 (1987)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
56.
1987

Beerens J.; Grégoris G.; Amor S. Ben; Portal J. C.; Mendez E. E.; Chang L. L.; Esaki L.

Pressure‐induced elimination of the hole gas in semimetallic GaSb‐InAs‐GaSb heterostructures
Phys. Rev. B 35, 3039 (1987)
Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse, France and Service National des Champs Intenses, Centre National de la Recherche Scientifique, Bote Postale 166X, 38042 Grenoble Cedex, France;
57.
1986

Mendez E. E.; Calleja E.; Wang W. I.

Tunneling through indirect‐gap semiconductor barriers
Phys. Rev. B 34, 6026 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
58.
1986

Washburn S.; Webb R. A.; Mendez E. E.; Chang L. L.; Esaki L.

Interaction effects among two‐dimensional electrons and holes
Phys. Rev. B 33, 8848 (1986)
IBM Thomas J. Watson Research Laboratory, Yorktown Heights, New York 10598
59.
1986

Mendez E. E.; Calleja E.; da Silva C. E. T. Gonçalves; Chang L. L.; Wang W. I.

Observation by resonant tunneling of high‐energy states in GaAs‐Ga;1-;xAlxAs quantum wells
Phys. Rev. B 33, 7368 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
60.
1986

Via L.; Mendez E. E.; Collins R. T.; Wang W. -I.

Comparative study of the effect of an electric field on the photocurrent and photoluminescence of GaAs‐GaAlAs quantum wells
Phys. Rev. B 33, 5939 (1986)
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
61.
1986

Mendez E. E.; Esaki L.; Wang W. I.

Resonant magnetotunneling in GaAlAs‐GaAs‐GaAlAs heterostructures
Phys. Rev. B 33, 2893 (1986)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
62.
1985

Mendez E. E.; Esaki L.; Chang L. L.

Quantum Hall effect in a two‐dimensional electron‐hole gas
Phys. Rev. Lett. 55, 2216 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
63.
1985

Tejedor C.; Chang C.-A.; Mendez E. E.; Meseguer F.; Calleja J. M.; Esaki L.

Raman resonance on E1 edges in superlattices
Phys. Rev. B 32, 5303 (1985)
Departamento de Física and Instituto de Física del Estado Sólido, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain;
64.
1985

Wang W. I.; Mendez E. E.; Kuan T. S.; Esaki L.

Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
Appl. Phys. Lett. 47, 826 (1985)
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
65.
1985

Mendez E. E.; Wang W. I.; Ricco B.; Esaki L.

Resonant tunneling of holes in AlAs‐GaAs‐AlAs heterostructures
Appl. Phys. Lett. 47, 415 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
66.
1985

Wang W. I.; Ricco B.; Mendez E. E.; Esaki L.

Summary Abstract: Resonant tunneling of holes in quantum well heterostructures
J. Vac. Sci. Technol. B 3, 1149 (1985)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
67.
1985

Mendez E. E.; Wang W. I.

Temperature dependence of hole mobility in GaAs‐Ga;1-;xAlxAs heterojunctions
Appl. Phys. Lett. 46, 1159 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
68.
1985

Wang W. I.; Kuan T. S.; Mendez E. E.; Esaki L.

Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
Phys. Rev. B 31, 6890 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
69.
1985

Jusserand B.; Voisin P.; Voos M.; Chang L. L.; Mendez E. E.; Esaki L.

Raman scattering in GaSb‐AlSb strained layer superlattices
Appl. Phys. Lett. 46, 678 (1985)
Centre National d’Etudes des Télécommunications, 196 rue de Paris, 92220 Bagneux, France;
70.
1985

Washburn S.; Webb R. A.; Mendez E. E.; Chang L. L.; Esaki L.

New Shubnikov–;de Haas effects in a two‐dimensional electron‐hole system
Phys. Rev. B 31, 1198 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
71.
1985

Kash J. A.; Mendez E. E.; Morkoç H.

Electric field induced decrease of photoluminescence lifetime in GaAs quantum wells
Appl. Phys. Lett. 46, 173 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
72.
1984

Mendez E. E.; Chang L. L.; Heiblum M.; Esaki L.; Naughton M.; Martin K.; Brooks J.

Fractionally quantized Hall effect in two‐dimensional systems of extreme electron concentration
Phys. Rev. B 30, 7310 (1984)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
73.
1984

Wang W. I.; Mendez E. E.; Stern Frank

High mobility hole gas and valence‐band offset in modulation‐doped ;p‐AlGaAs/GaAs heterojunctions
Appl. Phys. Lett. 45, 639 (1984)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
74.
1984

Mendez E. E.; Price P. J.; Heiblum M.

Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures
Appl. Phys. Lett. 45, 294 (1984)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
75.
1984

Mendez E. E.; Wang W. I.; Chang L. L.; Esaki L.

Fractional quantum Hall effect in a two‐dimensional hole system
Phys. Rev. B 30, 1087 (1984)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
76.
1984

Heiblum M.; Mendez E. E.; Stern Frank

High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
Appl. Phys. Lett. 44, 1064 (1984)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
77.
1984

Heiblum M.; Mendez E. E.; Osterling L.

Summary Abstract: High purity GaAs and AlGaAs grown by MBE
J. Vac. Sci. Technol. B 2, 233 (1984)
I. B. M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598
78.
1984

Chang Chin-An; Christie M. S.; Mendez E. E.; Chang L. L.; Esaki L.

Electron densities in InAs–AlSb quantum wells
J. Vac. Sci. Technol. B 2, 214 (1984)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
79.
1984

Washburn S.; Webb R. A.; Mendez E. E.; Chang L. L.; Esaki L.

Weak localization of two‐dimensional conduction holes
Phys. Rev. B 29, 3752 (1984)
IBM Thomas J. Watson Research Laboratory, Yorktown Heights, New York 10598
80.
1983

Heiblum M.; Mendez E. E.; Osterling L.

Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
J. Appl. Phys. 54, 6982 (1983)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
81.
1983

Mendez E. E.; Chang L. L.; Heiblum M.; Esaki L.

High‐magnetic‐field transport in a dilute two‐dimensional electron gas
Phys. Rev. B 28, 4886 (1983)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
82.
1983

Bastard G.; Mendez E. E.; Chang L. L.; Esaki L.

Variational calculations on a quantum well in an electric field
Phys. Rev. B 28, 3241 (1983)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
83.
1983

Mendez E. E.; Heiblum M.; Fisher R.; Klem J.; Thorne R. E.; Morkoç H.

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy
J. Appl. Phys. 54, 4202 (1983)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
84.
1983

Voisin P.; Bastard G.; Voos M.; Mendez E. E.; Chang C.-A.; Chang L. L.; Esaki L.

Optical transmission in GaSb–AlSb superlattices
J. Vac. Sci. Technol. B 1, 409 (1983)
Groupe de Physique des Solides de l’Ecole, Normale Supérieure, 24 rue Lhomond, 75005, Paris, France;
85.
1983

Mendez E. E.; Chang L. L.; Takaoka H.; Chang C.-A.; Esaki L.

Optical properties of GaSb–AlSb superlattices
J. Vac. Sci. Technol. B 1, 152 (1983)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
86.
1982

Mendez E. E.; Bastard G.; Chang L. L.; Esaki L.; Morkoc H.; Fischer R.

Effect of an electric field on the luminescence of GaAs quantum wells
Phys. Rev. B 26, 7101 (1982)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
87.
1981

Mendez E. E.; Chang L. L.; Landgren G.; Ludeke R.; Esaki L.; Pollak Fred H.

Observation of superlattice effects on the electronic bands of multilayer heterostructures
Phys. Rev. Lett. 46, 1230 (1981)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
88.
1981

Chang L. L.; Kawai N. J.; Mendez E. E.; Chang C.-A.; Esaki L.

Semimetallic InAs‐GaSb superlattices to the heterojunction limit
Appl. Phys. Lett. 38, 30 (1981)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
89.
1980

Perea Ernesto H.; Mendez Emilio E.; Fonstad Clifton G.

Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
Appl. Phys. Lett. 36, 978 (1980)
Department of Physics, Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Co-authors

Co-publications
25

Wang, WI
8

Agulló-Rueda, Fernando
7

Vina, Luis
6

Newaz, AKM
5

Calleja, Enrique
5

Chang, Chin-An
4

Song, W
4

Nielsen, Bent
3

Lin, Y
3

Lin, Yiping
3

Son, JK
3

Washburn, Sean
3

Nitta, Junsaku
3

Kuznetsov, VV
3

Camino, FE