Computed
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II-VI semiconductors
III-V and II-VI semiconductors
Nucleation and growth
Chemical vapor deposition
Impurities in crystals
Quantum dots
Laser deposition
Galvanomagnetic and other mag...
Vapor phase epitaxy; growth f...
Other semiconductor-to-semico...
Semiconductor compounds
Defects and impurities: dopin...
Rectification
Nanocrystals and nanoparticles
1.
Zhang J.; Li X. F.; Lu J. G.; Ye Z. Z.; Gong L.; Wu P.; Huang J.; Zhang Y. Z.; Chen L. X.; Zhao B. H.
Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure
2.
Lu J. G.; Bie X.; Wang Y. P.; Gong L.; Ye Z. Z.
Transparent conductive and near-infrared reflective Ga-doped ZnO/Cu bilayer films grown at room temperature
3.
Qiu M. X.; Gu X. Q.; Ye Z. Z.; Lu J. G.; He H. P.; Zhang Y. Z.; Zhao B. H.
p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films
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4.
Xu W. Z.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Zhao B. H.; Jiang L.; Lu J. G.; He H. P.; Zhang S. B.
Erratum: “ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition” [Appl. Phys. Lett. ;88, 173506 (2006)]
5.
Wang J. R.; Zhang Y. Z.; Ye Z. Z.; Lu J. G.; He H. P.; Zeng Y. J.; Ma Q. B.; Huang J. Y.; Zhu L. P.; Wu Y. Z.; Yang Y. F.; Gong L.
Microstructure and crystal defects in ZnMgO pleated nanosheets
6.
Lu J. G.; Zhang Y. Z.; Ye Z. Z.; Zeng Y. J.; Huang J. Y.; Wang L.
Erratum: “Rational synthesis and tunable optical properties of quasialigned ;Zn1-xMgx nanorods” [Appl. Phys. Lett. ;91, 193108 (2007)]
7.
Rational synthesis and tunable optical properties of quasialigned Zn1-x;MgxO nanorods
8.
Ye Z. Z.; Lu J. G.; Zhang Y. Z.; Zeng Y. J.; Chen L. L.; Zhuge F.; Yuan G. D.; He H. P.; Zhu L. P.; Huang J. Y.; Zhao B. H.
ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
9.
Lu J. G.; Fujita S.; Kawaharamura T.; Nishinaka H.; Kamada Y.; Ohshima T.; Ye Z. Z.; Zeng Y. J.; Zhang Y. Z.; Zhu L. P.; He H. P.; Zhao B. H.
Carrier concentration dependence of band gap shift in n-type ZnO:Al films
10.
Zeng Y. J.; Ye Z. Z.; Lu Y. F.; Lu J. G.; Sun L.; Xu W. Z.; Zhu L. P.; Zhao B. H.; Che Y.
ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition
11.
Lu J. G.; Fujita S.; Kawaharamura T.; Nishinaka H.; Kamada Y.; Ohshima T.
Carrier concentration induced band-gap shift in Al-doped Zn1-x;MgxO thin films
12.
Chen L. L.; Ye Z. Z.; Lu J. G.; Chu Paul K.
Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films
13.
Lu J. G.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Wang L.; Yuan J.; Zhao B. H.; Liang Q. L.
Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions
14.
Zeng Y. J.; Ye Z. Z.; Lu J. G.; Xu W. Z.; Zhu L. P.; Zhao B. H.; Limpijumnong Sukit
Erratum: “Identification of acceptor states in ;Li-doped p-type ZnO thin films” [Appl. Phys. Lett. ;89, 042106 (2006)]
15.
Lu J. G.; Zhang Y. Z.; Ye Z. Z.; Zeng Y. J.; He H. P.; Zhu L. P.; Huang J. Y.; Wang L.; Yuan J.; Zhao B. H.; Li X. H.
Control of p- and n-type conductivities in Li-doped ZnO thin films
16.
Lu J. G.; Ye Z. Z.; Yuan G. D.; Zeng Y. J.; Zhuge F.; Zhu L. P.; Zhao B. H.; Zhang S. B.
Electrical characterization of ZnO-based homojunctions
17.
Identification of acceptor states in Li-doped p-type ZnO thin films
18.
Lu J. G.; Ye Z. Z.; Zhang Y. Z.; Liang Q. L.; Fujita Sz.; Wang Z. L.
Self-assembled ZnO quantum dots with tunable optical properties
19.
Zeng Y. J.; Ye Z. Z.; Xu W. Z.; Lu J. G.; He H. P.; Zhu L. P.; Zhao B. H.; Che Y.; Zhang S. B.
p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
20.
Lu J. G.; Zhang Y. Z.; Ye Z. Z.; Zhu L. P.; Wang L.; Zhao B. H.; Liang Q. L.
Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method
21.
ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition
22.
Lu J. G.; Ye Z. Z.; Huang J. Y.; Zhu L. P.; Zhao B. H.; Wang Z. L.; Fujita Sz.
ZnO quantum dots synthesized by a vapor phase transport process
23.
Cong G. W.; Peng W. Q.; Wei H. Y.; Han X. X.; Wu J. J.; Liu X. L.; Zhu Q. S.; Wang Z. G.; Lu J. G.; Ye Z. Z.; Zhu L. P.; Qian H. J.; Su R.; Hong C. H.; Zhong J.; Ibrahim K.; Hu T. D.
Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films
24.
Zeng Y. J.; Ye Z. Z.; Xu W. Z.; Li D. Y.; Lu J. G.; Zhu L. P.; Zhao B. H.
Dopant source choice for formation of p-type ZnO: Li acceptor
25.
Chen L. L.; Lu J. G.; Ye Z. Z.; Lin Y. M.; Zhao B. H.; Ye Y. M.; Li J. S.; Zhu L. P.
p-type behavior in In–N codoped ZnO thin films
26.
Zhuge F.; Zhu L. P.; Ye Z. Z.; Ma D. W.; Lu J. G.; Huang J. Y.; Wang F. Z.; Ji Z. G.; Zhang S. B.
ZnO p-n homojunctions and ohmic contacts to Al–N-co-doped ;p-type ZnO
27.
Lu J. G.; Ye Z. Z.; Zhuge F.; Zeng Y. J.; Zhao B. H.; Zhu L. P.
p-type conduction in N–;Al co-doped ZnO thin films
26
Ye, ZZ
19
Zhu, LP
18
Zhao, BH
16
Zeng, YJ
10
Zhang, YZ
8
He, HP
7
Huang, JY
Xu, WZ
5
Zhang, SB
Wang, Lei
4
Zhuge, F
Fujita, Shigeo
3
Chen, LL
Liang, QL
2
Limpijumnong, Sukit