Look, David C.

Look D. C.; Leedy K. D.; Vines L.; Svensson B. G.; Zubiaga A.; Tuomisto F.; Doutt D. R.; Brillson L. J.

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Yang Z.; Li Y.; Look D. C.; Zhou H. M.; Chen W. V.; Kawakami R. K.; Yu P. K. L.; Liu J. L.

Thermal annealing effect on spin coherence in ZnO single crystals

Look David C.; Droubay Timothy C.; McCloy John S.; Zhu Zihua; Chambers Scott A.

Ga-doped ZnO grown by pulsed laser deposition in H2: The roles of Ga and H

Look D. C.; Leedy K. D.; Vines L.; Svensson B. G.; Zubiaga A.; Tuomisto F.; Doutt D. R.; Brillson L. J.

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Yang Z.; Li Y.; Look D. C.; Zhou H. M.; Chen W. V.; Kawakami R. K.; Yu P. K. L.; Liu J. L.

Thermal annealing effect on spin coherence in ZnO single crystals

Look David C.; Droubay Timothy C.; McCloy John S.; Zhu Zihua; Chambers Scott A.

Ga-doped ZnO grown by pulsed laser deposition in H2: The roles of Ga and H

Dong Yufeng; Fang Z.-Q.; Look D. C.; Doutt D. R.; Cantwell G.; Zhang J.; Song J. J.; Brillson Leonard J.

Defects at oxygen plasma cleaned ZnO polar surfaces

Fang Z.-Q.; Claflin B.; Look D. C.; Green D. S.; Vetury R.

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Scott Robin C.; Leedy Kevin D.; Bayraktaroglu Burhan; Look David C.; Zhang Yong-Hang

Highly conductive ZnO grown by pulsed laser deposition in pure Ar

McCloy John S.; Ryan Joseph V.; Droubay Timothy; Kaspar Tiffany C.; Chambers Scott; Look David C.

Magnetotransport properties of high quality Co:ZnO and Mn:ZnO single crystal pulsed laser deposition films: Pitfalls associated with magnetotransport on high resistivity materials

Look D. C.; Leedy K. D.; Tomich D. H.; Bayraktaroglu B.

Mobility analysis of highly conducting thin films: Application to ZnO

Fang Z.-Q.; Farlow G. C.; Claflin B.; Look D. C.; Green D. S.

Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

Fang Z.-Q.; Claflin B.; Look D. C.; Dong Y.-F.; Brillson L.

Metal contacts on bulk ZnO crystal treated with remote oxygen plasma

Claflin B.; Look D. C.

UV light-induced changes to the surface conduction in hydrothermal ZnO

Dong Yufeng; Hetzer M. J.; Doutt D. R.; Look D. C.; Fang Z.-Q.; Brillson L. J.

Polarity-related asymetry at ZnO surfaces and metal interfaces

Look D. C.; Farlow G. C.; Yaqoob F.; Vanamurthy L. H.; Huang M.

In-implanted ZnO: Controlled degenerate surface layer

Yang Z.; Look D. C.; Liu J. L.

Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy

Namkoong Gon; Trybus Elaissa; Lee Kyung Keun; Moseley Michael; Doolittle W. Alan; Look David C.

Metal modulation epitaxy growth for extremely high hole concentrations above 10¹⁹ ;cm^-3; in GaN

Look D. C.

Two-layer Hall-effect model with arbitrary surface-donor profiles: application to ZnO

Fang Z.-Q.; Claflin B.; Look D. C.; Dong Y. F.; Mosbacker H. L.; Brillson L. J.

Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy

Dabiran A. M.; Wowchak A. M.; Osinsky A.; Xie J.; Hertog B.; Cui B.; Look D. C.; Chow P. P.

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Dong Yufeng; Fang Z-Q.; Look D. C.; Cantwell G.; Zhang J.; Song J. J.; Brillson L. J.

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Burnham Shawn D.; Namkoong Gon; Look David C.; Clafin Bruce; Doolittle W. Alan

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

Fang Z.-Q.; Claflin B.; Look D. C.

Effects of annealing in N2 ambient on traps and persistent conduction in hydrothermally grown ZnO

Look D. C.; Claflin B.; Smith H. E.

Origin of conductive surface layer in annealed ZnO

Tuomisto F.; Ranki V.; Look D. C.; Farlow G. C.

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Mosbacker H. L.; Zgrabik C.; Hetzer M. J.; Swain A.; Look D. C.; Cantwell G.; Zhang J.; Song J. J.; Brillson L. J.

Thermally driven defect formation and blocking layers at metal-ZnO interfaces

Fang Z.-Q.; Claflin B.; Look D. C.; Kerr Lei L.; Li Xiaonan

Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

Mosbacker H. L.; El Hage S.; Gonzalez M.; Ringel S. A.; Hetzer M.; Look D. C.; Cantwell G.; Zhang J.; Song J. J.; Brillson L. J.

Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation

Fang Z.-Q.; Claflin B.; Look D. C.; Farlow G. C.

Electron irradiation induced deep centers in hydrothermally grown ZnO

Zhong Yongchun; Wong Kam Sing; Zhang Weili; Look D. C.

Radiative Recombination and Ultra‐long Exciton Photoluminescence Lifetime in GaN Freestanding Film via Two‐photon Excitation

Brillson L. J.; Mosbacker H. L.; Hetzer M. J.; Strzhemechny Y.; Jessen G. H.; Look D. C.; Cantwell G.; Zhang J.; Song J. J.

Dominant effect of near-interface native point defects on ZnO Schottky barriers

Xu Zhou; Edgar J. H.; Look D. C.; Baumann S.; Bleiler R. J.; Wang S. H.; Mohney S. E.

The effect of Si doping on the electrical properties of B12As2 thin films on (0001) 6H-SiC substrates

Wysmołek A.; Stępniewski R.; Potemski M.; Park S. S.; Look D. C.; Baranowski J. M.; Pakuła K.; Chwalisz-Piętka B.; Lee K. Y.

Magnetopolaron effect on shallow donors in GaN

Mitchel W. C.; Mitchell W. D.; Fang Z. Q.; Look D. C.; Smith S. R.; Smith H. E.; Khlebnikov Igor; Khlebnikov Y. I.; Basceri C.; Balkas C.

Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

Zhong Yongchun; Wong Kam Sing; Zhang Weili; Look D. C.

Radiative recombination and ultralong exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation

Hautakangas S.; Xu X.; Saarinen K.; Puska M. J.; Ranki V.; Makkonen I.; Look D. C.

Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

Look D. C.; Zhang S. B.; Limpijumnong Sukit; Reunchan Pakpoom; Farlow G. C.; Nordlund K.

Evidence for Native-Defect Donors in n-Type ZnO

Fang Z.-Q.; Look D. C.; Kim D. H.; Adesida I.

Traps in AlGaN/;GaN/;SiC heterostructures studied by deep level transient spectroscopy

Tuomisto F.; Look D. C.; Saarinen K.; Farlow G. C.

Introduction and recovery of point defects in electron-irradiated ZnO

Mosbacker H. L.; Strzhemechny Y. M.; White B. D.; Smith P. E.; Look D. C.; Reynolds D. C.; Litton C. W.; Brillson L. J.

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Hwang Dae-Kue; Kim Hyun-Sik; Lim Jae-Hong; Oh Jin-Yong; Yang Jin-Ho; Park Seong-Ju; Kim Kyoung-Kook; Look D. C.; Park Y. S.

Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Look D. C.; Renlund G. M.; Burgener R. H.; Sizelove J. R.

As-doped p-type ZnO produced by an evaporation/sputtering process

Sun X. L.; Bradley S. T.; Jessen G. H.; Look D. C.; Molnar R. J.; Brillson L. J.

Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces

Yu Phil W.; Clark Jerry D.; Look David C.; Chen C. Q.; Yang Jinwei; Koutstis Edmundas; Khan M. Asif; Tsvertkov Denis V.; Dmitriev Vladimir A.

Below band gap photoreflectance transitions in epitaxial GaN

Look D. C.; Fang Z-Q.; Soloviev S.; Sudarshan T. S.; Boeckl J. J.

Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

Reynolds D. C.; Litton C. W.; Look D. C.; Hoelscher J. E.; Claflin B.; Collins T. C.; Nause J.; Nemeth B.

High-quality, melt-grown ZnO single crystals

Wysmolek A.; Korona K. P.; Ste˛pniewski R.; Baranowski J. M.; Błoniarz J.; Potemski M.; Jones R. L.; Look D. C.; Kuhl J.; Park S. S.; Lee S. K.

Reply to “Comment on ‘Recombination of excitons bound to oxygen and silicon donors in freestanding GaN’ ”

Strzhemechny Yuri M.; Mosbacker Howard L.; Look David C.; Reynolds Donald C.; Litton Cole W.; Garces Nelson Y.; Giles Nancy C.; Halliburton Larry E.; Niki Shigeru; Brillson Leonard J.

Remote hydrogen plasma doping of single crystal ZnO

Alivov Ya. I.; Kalinina E. V.; Cherenkov A. E.; Look D. C.; Ataev B. M.; Omaev A. K.; Chukichev M. V.; Bagnall D. M.

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Tuomisto F.; Ranki V.; Saarinen K.; Look D C.

Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO

Look D. C.; Farlow G. C.; Drevinsky P. J.; Bliss D. F.; Sizelove J. R.

On the nitrogen vacancy in GaN

Alivov Ya. I.; Van Nostrand J. E.; Look D. C.; Chukichev M. V.; Ataev B. M.

Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Strzhemechny Yuri M.; Nemergut John; Smith Phillip E.; Bae Junjik; Look David C.; Brillson Leonard J.

Remote hydrogen plasma processing of ZnO single crystal surfaces

Oila J.; Kivioja J.; Ranki V.; Saarinen K.; Look D. C.; Molnar R. J.; Park S. S.; Lee S. K.; Han J. Y.

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

Fang Z.-Q.; Look D. C.; Wang X.-L.; Han Jung; Khan F. A.; Adesida I.

Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Ip K.; Overberg M. E.; Heo Y. W.; Norton D. P.; Pearton S. J.; Stutz C. E.; Luo B.; Ren F.; Look D. C.; Zavada J. M.

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Hwang Jeonghyun; Schaff William J.; Eastman Lester F.; Bradley Shawn T.; Brillson Leonard J.; Look David C.; Wu J.; Walukiewicz Wladek; Furis Madalina; Cartwright Alexander N.

Si doping of high-Al-mole fraction AlxGa1-x;N alloys with rf plasma-induced molecular-beam-epitaxy

Wysmolek A.; Korona K. P.; Stȩpniewski R.; Baranowski J. M.; Błoniarz J.; Potemski M.; Jones R. L.; Look D. C.; Kuhl J.; Park S. S.; Lee S. K.

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

Polyakov A. Y.; Smirnov N. B.; Govorkov A. V.; Fang Z.-Q.; Look D. C.; Park S. S.; Han J. H.

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

Polyakov A. Y.; Govorkov A. V.; Smirnov N. B.; Fang Z-Q.; Look D. C.; Park S. S.; Han J. H.

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

Desnica U. V.; Fang Z.-Q.; Pavlović M.; Look D. C.

Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN

Look D. C.; Reynolds D. C.; Litton C. W.; Jones R. L.; Eason D. B.; Cantwell G.

Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

Sun X. L.; Goss S. H.; Brillson L. J.; Look D. C.; Molnar R. J.

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Polyakov A. Y.; Smirnov N. B.; Govorkov A. V.; Fang Z.-Q.; Look D. C.; Molnar R. J.; Osinsky A. V.

Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

Auret F. D.; Goodman S. A.; Legodi M. J.; Meyer W. E.; Look D. C.

Electrical characterization of vapor-phase-grown single-crystal ZnO

Garces N. Y.; Eason D. B.; Giles N. C.; Halliburton L. E.; Cantwell G.; Reynolds D. C.; Look D. C.

Production of nitrogen acceptors in ZnO by thermal annealing

Florescu D. I.; Cantwell G.; Look D. C.; Pollak Fred H.; Mourokh L. G.; Li X.

High spatial resolution thermal conductivity of bulk ZnO (0001)

Look D. C.; Lu H.; Schaff W. J.; Jasinski J.; Liliental-Weber Z.

Donor and acceptor concentrations in degenerate InN

Saarinen K.; Suski T.; Grzegory I.; Look D. C.

Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

Reynolds D. C.; Look D. C.; Jogai B.; Collins T. C.

Polariton and free-exciton-like photoluminescence in ZnO

Auret F. D.; Goodman S. A.; Hayes M.; Legodi M. J.; van Laarhoven H. A.; Look D. C.

Electrical characterization of 1.8 MeV proton-bombarded ZnO

Look D. C.; Sizelove J. R.

Predicted maximum mobility in bulk GaN

Collins T. C.; Reynolds D. C.; Look D. C.

Properties of ZnO

Look D. C.; Fang Z.-Q.

Characterization of near-surface traps in semiconductors: GaN

Goss S. H.; Sun X. L.; Young A. P.; Brillson L. J.; Look D. C.; Molnar R. J.

Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

Reynolds D. C.; Look D. C.; Jogai B.; Molnar R. J.

Evidence for shallow acceptors in GaN

Reynolds D. C.; Look D. C.; Jogai B.

Fine structure on the green band in ZnO

Fang Z.-Q.; Look D. C.; Visconti P.; Wang D.-F.; Lu C.-Z.; Yun F.; Morkoç H.; Park S. S.; Lee K. Y.

Deep centers in a free-standing GaN layer

Saxler A.; Look D. C.; Elhamri S.; Sizelove J.; Mitchel W. C.; Sung C. M.; Park S. S.; Lee K. Y.

High mobility in n-type GaN substrates

Fang Z.-Q.; Look D. C.; Jasinski J.; Benamara M.; Liliental-Weber Z.; Molnar R. J.

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Ko H. J.; Chen Y. F.; Hong S. K.; Wenisch H.; Yao T.; Look D. C.

Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

Reynolds D. C.; Look D. C.; Jogai B.

Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN

Reynolds D. C.; Look D. C.; Jogai B.; Saxler A. W.; Park S. S.; Hahn J. Y.

Identification of the Γ;5 and Γ;6 free excitons in GaN

Chernyak L.; Osinsky A.; Nootz G.; Schulte A.; Jasinski J.; Benamara M.; Liliental-Weber Z.; Look D. C.; Molnar R. J.

Electron beam and optical depth profiling of quasibulk GaN

Sherriff R. E.; Reynolds D. C.; Look D. C.; Jogai B.; Hoelscher J. E.; Collins T. C.; Cantwell G.; Harsch W. C.

Photoluminescence measurements from the two polar faces of ZnO

Ahoujja M.; Yeo Y. K.; Hengehold R. L.; Pomrenke G. S.; Look D. C.; Huffman Jim

Electrical properties of boron-doped p–;SiGeC grown on n^-;–;Si substrate

Reynolds D. C.; Look D. C.; Jogai B.; Hoelscher J. E.; Sherriff R. E.; Harris M. T.; Callahan M. J.

Time-resolved photoluminescence lifetime measurements of the Γ;5 and Γ;6 free excitons in ZnO

Messmer E. Rodríguez; Söderström D.; Hult P.; Marcinkevicius S.; Lourdudoss S.; Look D. C.

Properties of Semi‐insulating GaAs;Fe Grown by Hydride Vapor Phase Epitaxy

Reynolds D. C.; Look D. C.; Jogai B.; Hoelscher J. E.; Sherriff R. E.; Molnar R. J.

Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

Van Nostrand J. E.; Solomon J.; Saxler A.; Xie Q.-H.; Reynolds D. C.; Look D. C.

Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

Aoki Toru; Hatanaka Yoshinori; Look David C.

ZnO diode fabricated by excimer-laser doping

Polenta L.; Fang Z-Q.; Look D. C.

On the main irradiation-induced defect in GaN

Choopun S.; Vispute R. D.; Noch W.; Balsamo A.; Sharma R. P.; Venkatesan T.; Iliadis A.; Look D. C.

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

Reynolds D. C.; Look D. C.; Jogai B.; Litton C. W.; Collins T. C.; Harris M. T.; Callahan M. J.; Bailey J. S.

Strain splitting of the Γ;5 and Γ;6 free excitons in ZnO

Levinshtein M. E.; Rumyantsev S. L.; Look D. C.; Molnar R. J.; Khan M. Asif; Simin G.; Adivarahan V.; Shur M. S.

Low-frequency noise in n-GaN with high electron mobility

Look D. C.; Reynolds D. C.; Hemsky J. W.; Jones R. L.; Sizelove J. R.

Production and annealing of electron irradiation damage in ZnO

Reynolds D. C.; Look D. C.; Jogai B.; Litton C. W.; Cantwell G.; Harsch W. C.

Valence-band ordering in ZnO

Look D. C.; Hemsky J. W.; Sizelove J. R.

Residual Native Shallow Donor in ZnO

Look D. C.; Sizelove J. R.

Dislocation Scattering in GaN

Kim Wook; Look D. C.; Fang Z.-Q.; Morkoç H.; Botchkarev A. E.; Smith David J.

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

Reynolds D. C.; Look D. C.; Jogai B.; Litton C. W.; Collins T. C.; Harsch W.; Cantwell G.

Erratum: Neutral-donor–bound-exciton complexes in ZnO crystals [Phys. Rev. B ;57, 12 151 (1998)]

Reynolds D. C.; Look D. C.; Jogai B.; Litton C. W.; Collins T. C.; Harsch W.; Cantwell G.

Neutral-donor–bound-exciton complexes in ZnO crystals

Fang Z-Q.; Look D. C.; Kim W.; Fan Z.; Botchkarev A.; Morkoç H.

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Li L. K.; Alperin J.; Wang W. I.; Look D. C.; Reynolds D. C.

High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy

Fang Z.-Q.; Hemsky J. W.; Look D. C.; Mack M. P.

Electron-irradiation-induced deep level in n-type GaN

Fang Z.-Q.; Reynolds D. C.; Look D. C.; Paraskevopoulos N. G.; Anderson T. E.; Jones R. L.

Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs

Reynolds D. C.; Look D. C.; Jogai B.; Collins T. C.

Spin splitting of donor-bound excitons in ZnO due to combined stress and spin exchange

Look D. C.; Reynolds D. C.; Hemsky J. W.; Sizelove J. R.; Jones R. L.; Molnar R. J.

Defect Donor and Acceptor in GaN

Reynolds D. C.; Look D. C.; Jogai B.; Kaspi R.; Evans K. R.; Estes M.

High quality interfaces in GaAs–AlAs quantum wells determined from high resolution photoluminescence

Look D. C.; Molnar R. J.

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Kuisma S.; Saarinen K.; Hautojärvi P.; Fang Z.-Q.; Look D.

Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs

Hamdani F.; Botchkarev A.; Kim W.; Morkoç H.; Yeadon M.; Gibson J. M.; Tsen S.-C. Y.; Smith David J.; Reynolds D. C.; Look D. C.; Evans K.; Litton C. W.; Mitchel W. C.; Hemenger P.

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Look D. C.; Fang Z-Q.; Hemsky J. W.; Kengkan P.

Identification of electron-irradiation defects in semi-insulating GaAs by normalized thermally stimulated current measurements

DeSalvo Gregory C.; Bozada Christopher A.; Look David C.; Ebel John L.

Depth measurement of doped semiconductors using the Hall technique

Fang Z.-Q.; Look D. C.; Yamamoto H.; Shimakura H.

Effect of multistep wafer‐annealing on main traps in Czochralski‐grown semi‐insulating GaAs

DeSalvo Gregory C.; Sewell James S.; Quach Tony K.; Pettiford Carl I.; Nakano Kenichi; Jenkins Thomas J.; Havasy Charles K.; Gillespie James K.; Dettmer Ross W.; Cerny Charles L. A.; Barrette John P.; Look David C.; Ebel John L.; Bozada Christopher A.; Via G. David

Wet Chemical Digital Etching of GaAs at Room Temperature

Look D. C.; Fang Z.-Q.

Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Look D. C.; Reynolds D. C.; Kim W.; Aktas Ö.; Botchkarev A.; Salvador A.; Morkoç H.

Deep‐center hopping conduction in GaN

Look D. C.; Stutz C. E.; Sizelove J. R.; Evans K. R.

On Hall scattering factors for holes in GaAs

Reynolds D. C.; Morkoç H.; Salvador A.; Botchkarev A.; Aktas Ö.; Kim W.; Look D. C.; Talwar D. N.

Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy

Look D. C.; Fang Z.-Q.; Kim W.; Aktas Ö.; Botchkarev A.; Salvador A.; Morkoç H.

Thermally stimulated current trap in GaN

Reynolds D. C.; Look D. C.; Jogai B.; McCoy G. L.; Bajaj K. K.

Magnetophotoluminescence study of excited states associated with donor bound excitons in high‐purity GaAs

Look D. C.; Jogai B.; Kaspi R.; Ebel J. L.; Evans K. R.; Jones R. L.; Nakano K.; Sherriff R. E.; Stutz C. E.; DeSalvo G. C.; Ito C.

Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

Look D. C.; Sizelove J. R.

Depletion width and capacitance transient formulas for deep traps of high concentration

Reynolds D. C.; Look D. C.; Kaspi R.; Talwar D. N.

Phonon replicas in the photoluminescence emission of AlxGa1-;xAs alloys

Fang Z-Q.; Look D. C.

Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi‐insulating GaAs

Look D. C.; Fang Z.-Q.; Sizelove J. R.

Convenient determination of concentration and energy in deep‐level transient spectroscopy

Reynolds D. C.; Look D. C.; Talwar D. N.; McCoy G. L.; Evans K. R.

Demonstration of semiconductor characterization by phonon sidebands in photoluminescence

Martinez Marino J.; Look David C.; Sizelove John R.; Schuermeyer Fritz L.

Monte Carlo simulation of bulk hole transport in AlxGa1-;xAs, In1-;xAlxAs, and GaAsxSb1-;x

Reynolds D. C.; Look D. C.; Jogai B.; Stutz C. E.

Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1-;xAs‐GaAs quantum wells

Look D. C.; Walters D. C.; Mier M. G.; Sizelove J. R.

Nondestructive mapping of carrier concentration and dislocation density in n+‐type GaAs

Reynolds D. C.; Look D. C.; Jogai B.; Stutz C. E.; Jones R.; Bajaj K. K.

Magnetoluminescence studies in GaAs‐Al;xGa1-;xAs single heterojunctions; Observation of parity‐forbidden Landau‐level transitions

Reynolds D. C.; Look D. C.; Jogai B.; Stutz C. E.; Evans K.; Yu P. W.; Radomsky L.

Radiative recombination at the AlxGa1-;xAs‐GaAs heterostructure interface by two‐dimensional excitons

Look D. C.; Fang Z.-Q.; Yamamoto H.; Sizelove J. R.; Mier M. G.; Stutz C. E.

Deep traps in molecular‐beam‐epitaxial GaAs grown at low temperatures

Look D. C.; Jogai B.; Stutz C. E.; Sherriff R. E.; DeSalvo G. C.; Rogers T. J.; Ballingall J. M.

Magneto‐Hall characterization of delta‐doped pseudomorphic high electron mobility transistor structures

Look D. C.; Fang Z-Q.; Sizelove J. R.

Observation of a metastable defect transition in GaAs

Stutz C. E.; Jogai B.; Look D. C.; Ballingall J. M.; Rogers T. J.

Electrochemical capacitance‐voltage analysis of delta‐doped pseudomorphic high electron mobility transistor material

Roberts J. C.; Boutros K. S.; Bedair S. M.; Look D. C.

Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition

Reynolds D. C.; Look D. C.; Jogai B.; Stutz C. E.

Observation of free and bound excitons associated with the two‐dimensional electron gas in modulation‐doped heterostructures

Look D. C.; Fang Z. -Q.; Look J. W.; Sizelove J. R.

Hopping Conduction in Molecular Beam Epitaxial GaAs Grown at Very Low Temperatures

Reynolds D. C.; Look D. C.; Jogai B.; Stutz C. E.

Recombination of two‐dimensional electrons with free light and heavy holes in Al;xGa1-;xAs‐GaAs single heterojunctions in a magnetic field

Look D. C.; He Y.; Ramdani J.; El-Masry N.; Bedair S. M.

Semi‐insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

Lindsay S. M.; Hemsky J. W.; Look D. C.

Electron beam modification of GaAs surface potential: Measurement of Richardson constant

Fang Z.-Q.; Look D. C.

Prominent thermally stimulated current trap in low‐temperature‐grown molecular beam epitaxial GaAs

Look D. C.; Stutz C. E.; Bozada C. A.

Analytical two‐layer Hall analysis; Application to modulation‐doped field‐effect transistors

Look D. C.; Walters D. C.; Robinson G. D.; Sizelove J. R.; Mier M. G.; Stutz C. E.

Annealing dynamics of molecular‐beam epitaxial GaAs grown at 200 °C

Look D. C.; Robinson G. D.; Sizelove J. R.; Stutz C. E.

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 °C

Fang Z.-Q.; Look D. C.

Photoquenching and thermal recovery of a thermally stimulated current peak in semi‐insulating GaAs

Look D. C.; Fang Z-Q.; Sizelove J. R.; Stutz C. E.

New AsGa related center in GaAs

Look D. C.; Fang Z-Q.; Sizelove J. R.

Recovery of quenched hopping conduction in GaAs layers grown by molecular‐beam epitaxy at 200 °C

Fang Z.-Q.; Look D. C.

Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs

Look D. C.; Grant J. T.; Sizelove J. R.

Shifted x‐ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 °C

Fang Z.-Q.; Look D. C.; Zhao J. H.

Traps in semi‐insulating InP studied by thermally stimulated current spectroscopy

Ziebro B.; Hemsky J. W.; Look D. C.

Defect models in electron‐irradiated ;n‐type GaAs

Look D. C.; Walters D. C.; Stutz C. E.; Evans K. R.; Sizelove J. R.

Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C

Look D. C.; Walters D. C.; Mier M.; Stutz C. E.; Brierley S. K.

Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C

Manasreh M. O.; Evans K. R.; Stutz C. E.; Look D. C.; Hemsky J.

Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

von Bardeleben H. J.; Manasreh M. O.; Look D. C.; Evans K. R.; Stutz C. E.

Electron‐paramagnetic‐resonance study of GaAs grown by low‐temperature molecular‐beam epitaxy

Look D. C.; Lorance D. K.; Sizelove J. R.; Stutz C. E.; Evans K. R.; Whitson D. W.

Alloy scattering in p‐type Al;xGa1-;xAs

Look D. C.

On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature

Fang Z-Q.; Look D. C.

Infrared quenching and thermal recovery of thermally stimulated current spectra in GaAs

Fang Z-Q.; Look D. C.

Comparison of deep centers in semi‐insulating liquid‐encapsulated Czochralski and vertical‐gradient freeze GaAs

Mumford P. D.; Look D. C.

On‐wafer Hall‐effect measurement system

Look D. C.; Stutz C. E.; Evans K. R.

Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layer

Yamamoto H.; Fang Z-Q.; Look D. C.

Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs; Influence of deep donor band

Look D. C.; Walters D. C.; Manasreh M. O.; Sizelove J. R.; Stutz C. E.; Evans K. R.

Anomalous Hall‐effect results in low‐temperature molecular‐beam‐epitaxial GaAs; Hopping in a dense ;EL2‐like band

Manasreh M. O.; Look D. C.; Evans K. R.; Stutz C. E.

Infrared absorption of deep defects in molecular‐beam‐epitaxial GaAs layers grown at 200 °C; Observation of an ;EL2‐like defect

Look D. C.; Stutz C. E.; Evans K. R.

Surface and interface free‐carrier depletion in GaAs molecular beam epitaxial layers; Demonstration of high interface charge

Ziebro B. S.; Look D. C.; Hemsky J. W.; Rice W.

Insitu Hall‐effect system for real‐time electron‐irradiation studies

Look David C.

Review of Hall Effect and Magnetoresistance Measurements in GaAs Materials and Devices

Halder N. C.; Look D. C.

Deviations from bulk transport measurements in semi‐insulating GaAs

Look D. C.

Hall‐effect depletion corrections in ion‐implanted samples; Si;29 in GaAs

Look D. C.; Walters D. C.; Mier M. G.; Sewell J. S.; Sizelove J. S.; Akselrad A.; Clemans J. E.

Uniformity of 3‐in., semi‐insulating, vertical‐gradient‐freeze GaAs wafers

Look D. C.; Walters D. C.; Sewell J. S.; Dudley S. C.; Mier M. G.; Sizelove J. S.

A new technique for whole‐wafer etch‐pit density mapping in GaAs

Look D. C.; Pimentel E.

Photoresistivity and photo‐Hall‐effect topography on semi‐insulating GaAs wafers

Look D. C.

Equivalence of donor and acceptor fits to temperature‐dependent Hall data; General case

Look D. C.; Sizelove J. R.

Defect production in electron‐irradiated, ;n‐type GaAs

Yu P. W.; Look D. C.; Ford W.

Photoluminescence in electrically reversible (semiconducting to semi‐insulating) bulk GaAs

Look D. C.

High acceptor production rate in electron‐irradiated ;n‐type GaAs; Impact on defect models

Look D. C.; Sizelove J. R.

Equivalence of donor and acceptor fits of temperature‐dependent carrier‐concentration data

Look D. C.; Sizelove J. R.; Yu P. W.; Theis W. M.; Ford W.; Mathur G.; Lee D. H.; Li S. S.

Semiconducting/semi‐insulating reversibility in bulk GaAs

Norris George B.; Look D. C.; Kopp W.; Klem J.; Morkoç H.

Summary Abstract: Theoretical and experimental capacitance–voltage behavior of modulation‐doped Al;0.3Ga0.7As/GaAs heterojunctions

Norris George B.; Look D. C.; Kopp W.; Klem J.; Morkoç H.

Theoretical and experimental capacitance‐voltage behavior of Al;0.3Ga0.7As/GaAs modulation‐doped heterojunctions; Relation of conduction‐band discontinuity to donor energy

Look D. C.; Norris George B.; Kopp W.; Henderson T.; Morkoç H.

Magnetoresistance method to determine GaAs and AlxGa1-;xAs mobilities in AlxGa1-;xAs/GaAs modulation‐doped field‐effect transistor structures

Norris George B.; Look D. C.; Kopp W.; Klem J.; Morkoç H.

Summary Abstract: Capacitance–voltage characteristics in modulation doped heterojunction FETs

Look D. C.

Schottky‐barrier profiling techniques in semiconductors; Gate current and parasitic resistance effects

Lee H. J.; Look D. C.

Hole transport in pure and doped GaAs

Colter P. C.; Look D. C.; Reynolds D. C.

Low compensation vapor phase epitaxial gallium arsenide

Look D. C.; Colter P. C.

Electrical properties of low‐compensation GaAs

Look D. C.; Pomrenke Gernot S.

A study of the 0.1‐eV conversion acceptor in GaAs

Look D. C.; Chaudhuri S.; Sizelove J. R.

Defect nature of the 0.4‐eV center in O‐doped GaAs

Look D. C.; Chaudhuri S.; Eaves L.

Positive identification of the Cr4+→;Cr ;3+ thermal transition in GaAs

Look D. C.

Magneto‐Hall and magnetoresistance coefficients in semiconductors with mixed conductivity

Look D. C.

Statistics of multicharge centers in semiconductors: Applications