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Kurtz, Sarah R.

Computed

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Research Profile

Latest Publications

1.
2011

Miller David C.; Kempe Michael D.; Kennedy Cheryl E.; Kurtz Sarah R.

Analysis of transmitted optical spectrum enabling accelerated testing of multijunction concentrating photovoltaic designs
Opt. Eng. 50, 013003 (2011)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
2.
2010

Geisz John F.; Scott Ward J.; Duda Anna; Olavarria Waldo; Gedvilas Lynn; Young Michelle; Wanlass Mark W.; Carapella Jeff; Kurtz Sarah R.; Friedman Daniel J.; Romero Manuel J.; Steiner Myles A.

Infrared Reflective and Transparent Inverted Metamorphic Triple Junction Solar Cells
AIP Conf. Proc. 1277, 11 (2010)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, USA 80401
3.
2009

Miller David C.; Kempe Michael D.; Kennedy Cheryl E.; Kurtz Sarah R.

Analysis of transmitted optical spectrum enabling accelerated testing of CPV designs
Proc. SPIE Int. Soc. Opt. Eng. 7407, 74070G (2009)
National Renewable Energy Lab. (USA)

Curriculum Vitae

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All Publications

1.
2011

Miller David C.; Kempe Michael D.; Kennedy Cheryl E.; Kurtz Sarah R.

Analysis of transmitted optical spectrum enabling accelerated testing of multijunction concentrating photovoltaic designs
Opt. Eng. 50, 013003 (2011)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
2.
2010

Geisz John F.; Scott Ward J.; Duda Anna; Olavarria Waldo; Gedvilas Lynn; Young Michelle; Wanlass Mark W.; Carapella Jeff; Kurtz Sarah R.; Friedman Daniel J.; Romero Manuel J.; Steiner Myles A.

Infrared Reflective and Transparent Inverted Metamorphic Triple Junction Solar Cells
AIP Conf. Proc. 1277, 11 (2010)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, USA 80401
3.
2009

Miller David C.; Kempe Michael D.; Kennedy Cheryl E.; Kurtz Sarah R.

Analysis of transmitted optical spectrum enabling accelerated testing of CPV designs
Proc. SPIE Int. Soc. Opt. Eng. 7407, 74070G (2009)
National Renewable Energy Lab. (USA)
4.
2009

Rühle Sven; Segal Akiba; Vilan Ayelet; Kurtz Sarah R.; Grinis Larissa; Zaban Arie; Lubomirsky Igor; Cahen David

A two junction, four terminal photovoltaic device for enhanced light to electric power conversion using a low-cost dichroic mirror
J. Renewable Sustainable Energy 1, 013106 (2009)
Department of Chemistry, Bar-Ilan University, Ramat Gan 52900, Israel
5.
2007

Tycko Robert; Kurtz Sarah R.; Dabbagh Gary; Goral John P.

Erratum: Quantitative study of atomic ordering in Ga0.5In0.5P thin films by ³¹P nuclear magnetic resonance [Phys. Rev. B ;45, 13452 (1992)]
Phys. Rev. B 75, 249901 (2007)
6.
2007

Khan Aurangzeb; Kurtz Sarah R.; Prasad S.; Johnston S. W.; Gou Jihua

Correlation of nitrogen related traps in InGaAsN with solar cell properties
Appl. Phys. Lett. 90, 243509 (2007)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
7.
2007

Jackrel David B.; Bank Seth R.; Yuen Homan B.; Wistey Mark A.; Harris James S.; Ptak Aaron J.; Johnston Steven W.; Friedman Daniel J.; Kurtz Sarah R.

Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
J. Appl. Phys. 101, 114916 (2007)
Solid State Electronics Laboratory, Stanford University, Stanford, California 94305
8.
2006

Johnston S. W.; Kurtz S. R.

Comparison of a dominant electron trap in n-type and p-type GaNAs using deep-level transient spectroscopy
J. Vac. Sci. Technol. A 24, 1252 (2006)
National Renewable Energy Laboratory, 1617 Cole Boulevard, MS 3215, Golden, Colorado 80401
9.
2006

Luther J. M.; Kurtz S. R.; Johnston S. W.; Ahrenkiel R. K.; Collins R. T.

Temperature-dependent dark current measurements in GaAsN heterojunction diodes
Appl. Phys. Lett. 88, 263502 (2006)
National Renewable Energy Laboratory, Golden, Colorado 80401
10.
2005

Ahmad I.; Kasisomayajula V.; Holtz M.; Berg J. M.; Kurtz S. R.; Tigges C. P.; Allerman A. A.; Baca A. G.

Self-heating study of an AlGaN/;GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
Appl. Phys. Lett. 86, 173503 (2005)
Department of Physics, Texas Tech University, Lubbock, Texas 79409
11.
2005

Johnston S. W.; Kurtz S. R.; Friedman D. J.; Ptak A. J.; Ahrenkiel R. K.; Crandall R. S.

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement
Appl. Phys. Lett. 86, 072109 (2005)
National Renewable Energy Laboratory, Golden, Colorado 80401
12.
2004

Kaplar R. J.; Kurtz S. R.; Koleske D. D.

Optical and electrical step-recovery study of minority-carrier transport in an InGaN/;GaN quantum-well light-emitting diode grown on sapphire
Appl. Phys. Lett. 85, 5436 (2004)
Sandia National Laboratories, Albuquerque, New Mexico 87185
13.
2004

Kurtz Sarah R.

Growing pains for new energy-saving technologies
Proc. SPIE Int. Soc. Opt. Eng. 5530, 316 (2004)
National Renewable Energy Lab. (United States)
14.
2004

Kaplar R. J.; Kurtz S. R.; Koleske D. D.; Fischer A. J.

Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
J. Appl. Phys. 95, 4905 (2004)
Sandia National Laboratories, Albuquerque, New Mexico 87185;
15.
2004

Fischer A. J.; Fullmer K. W.; Kurtz S. R.; Allerman A. A.; Crawford M. H.; Bogart K. H. A.; Lee S. R.; Kaplar R. J.; Chow W. W.; Figiel J. J.

Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
Appl. Phys. Lett. 84, 3394 (2004)
Sandia National Labs, Albuquerque, New Mexico 87185;
16.
2004

Kurtz S. R.; Allerman A. A.; Koleske D. D.; Baca A. G.; Briggs R. D.

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance
J. Appl. Phys. 95, 1888 (2004)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601;
17.
2003

Shan W.; Friedman D. J.; Geisz J. F.; Haller E. E.; Li S. X.; Ager J. W.; Yu K. M.; Wu J.; Walukiewicz W.; Kurtz Sarah R.

Band-gap bowing effects in BxGa1-x;As alloys
J. Appl. Phys. 93, 2696 (2003)
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
18.
2002

Koleske D. D.; Fischer A. J.; Allerman A. A.; Mitchell C. C.; Cross K. C.; Kurtz S. R.; Figiel J. J.; Fullmer K. W.; Breiland W. G.

Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
Appl. Phys. Lett. 81, 1940 (2002)
Sandia National Laboratories, Albuquerque, New Mexico 87185;
19.
2002

Peake G. M.; Cederberg J. G.; Hafich M. J.; Kurtz S. R.; Biefeld R. M.; Palmasiano M. N.

Common n- and p-Contact for Serial Wiring of Quaternary Antimonide Monolithic Interconnected Module Thermophotovoltaic Devices
J. Electrochem. Soc. 149, G416 (2002)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601, USA;
20.
2002

Kaplar R. J.; Ringel S. A.; Kurtz Steven R.; Klem J. F.; Allerman A. A.

Deep-level defects in InGaAsN grown by molecular-beam epitaxy
Appl. Phys. Lett. 80, 4777 (2002)
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210;
21.
2002

Kurtz S. R.; Allerman A. A.; Koleske D. D.; Peake G. M.

Electroreflectance of the AlGaN/GaN heterostructure and two-dimensional electron gas
Appl. Phys. Lett. 80, 4549 (2002)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601;
22.
2002

Kurtz Steven R.; Klem J. F.; Allerman A. A.; Sieg R. M.; Seager C. H.; Jones E. D.

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy
Appl. Phys. Lett. 80, 1379 (2002)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601;
23.
2001

Kaplar R. J.; Arehart A. R.; Ringel S. A.; Allerman A. A.; Sieg R. M.; Kurtz Steven R.

Deep levels and their impact on generation current in Sn-doped InGaAsN
J. Appl. Phys. 90, 3405 (2001)
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210;
24.
2000

Jones E. D.; Allerman A. A.; Kurtz S. R.; Modine N. A.; Bajaj K. K.; Tozer S. W.; Wei X.

Photoluminescence-linewidth-derived reduced exciton mass for InyGa1-y;As1-x;Nx alloys
Phys. Rev. B 62, 7144 (2000)
Sandia National Laboratories, Albuquerque, New Mexico 87185;
25.
2000

Shan W.; Walukiewicz W.; Yu K. M.; Ager J. W.; Haller E. E.; Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz Sarah R.; Nauka C.

Effect of nitrogen on the electronic band structure of group III-N-V alloys
Phys. Rev. B 62, 4211 (2000)
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720;
26.
2000

Kurtz Steven R.; Allerman A. A.; Seager C. H.; Sieg R. M.; Jones E. D.

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
Appl. Phys. Lett. 77, 400 (2000)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0603;
27.
2000

Herndon M. K.; Bradford W. C.; Collins R. T.; Hawkins B. E.; Kuech T. F.; Friedman D. J.; Kurtz S. R.

Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells
Appl. Phys. Lett. 77, 100 (2000)
Physics Department, Colorado School of Mines, Golden, Colorado 80401;
28.
2000

Klem J. F.; Fritz I. J.; Blum O.; Kurtz S. R.; Choquette K. D.

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
J. Vac. Sci. Technol. B 18, 1605 (2000)
Sandia National Laboratories, Albuquerque, New Mexico 87185;
29.
2000

Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz Sarah R.; Reedy R. C.; Swartzlander A. B.; Keyes B. M.; Norman A. G.

BGaInAs alloys lattice matched to GaAs
Appl. Phys. Lett. 76, 1443 (2000)
National Renewable Energy Laboratory, Golden, Colorado 80401;
30.
2000

Mair R. A.; Lin J. Y.; Jiang H. X.; Jones E. D.; Allerman A. A.; Kurtz S. R.

Time-resolved photoluminescence studies of InxGa1-x;As1-y;Ny
Appl. Phys. Lett. 76, 188 (2000)
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601;
31.
1999

Soo Y. L.; Jones E. D.; Kurtz Steven R.; Olson J. M.; Kurtz Sarah; Geisz J. F.; Hulbert S. L.; Chen J. G.; Kao Y. H.; Huang S.; Allerman A. A.

Local structures and interface morphology of InxGa1-x;As1-y;Ny thin films grown on GaAs
Phys. Rev. B 60, 13605 (1999)
Department of Physics, State University of New York at Buffalo, Amherst, New York 14260;
32.
1999

Chow W. W.; Jones E. D.; Modine N. A.; Allerman A. A.; Kurtz S. R.

Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
Appl. Phys. Lett. 75, 2891 (1999)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601;
33.
1999

Li J. Z.; Lin J. Y.; Jiang H. X.; Geisz J. F.; Kurtz Sarah R.

Persistent photoconductivity in Ga1-x;InxNyAs1-y;
Appl. Phys. Lett. 75, 1899 (1999)
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601;
34.
1999

Jones E. D.; Tozer S. T.; Wright A. F.; Kurtz S. R.; Allerman A. A.; Modine N. A.; Wei X.

Band structure of InxGa1-x;As1-y;Ny alloys and effects of pressure
Phys. Rev. B 60, 4430 (1999)
Sandia National Laboratories, Albuquerque, New Mexico
35.
1999

Shan W.; Olson J. M.; Friedman D. J.; Geisz J. F.; Haller E. E.; Ager J. W.; Walukiewicz W.; Kurtz Sarah R.

Effect of nitrogen on the band structure of GaInNAs alloys
J. Appl. Phys. 86, 2349 (1999)
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720;
36.
1999

Kwon D.; Kaplar R. J.; Ringel S. A.; Allerman A. A.; Kurtz Steven R.; Jones E. D.

Deep levels in p-type InGaAsN lattice matched to GaAs
Appl. Phys. Lett. 74, 2830 (1999)
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210-1272;
37.
1999

Perkins J. D.; Mascarenhas A.; Zhang Yong; Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz Sarah R.

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-x;Nx with x < 0.03 ;
Phys. Rev. Lett. 82, 3312 (1999)
National Renewable Energy Laboratory, Golden, Colorado 80401-3393
38.
1999

Keyes B. M.; Geisz J. F.; Dippo P. C.; Reedy R.; Kramer C.; Friedman D. J.; Kurtz Sarah R.; Olson J. M.

Optical investigation of GaNAs
AIP Conf. Proc. 462, 511 (1999)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401;
39.
1999

Friedman D. J.; Kurtz Sarah R.; Kibbler A. E.

Exploration of GaInTlP and related Tl-containing III-V alloys for photovoltaics
AIP Conf. Proc. 462, 401 (1999)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401;
40.
1999

Ward J. S.; Duda A.; Coutts T. J.; Kurtz S. R.

New concepts for high-intensity PV modules for use with dish concentrator systems
AIP Conf. Proc. 462, 385 (1999)
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401;
41.
1999

Kurtz Sarah R.; Friedman D. J.

Concentrator and space applications of high-efficiency solar cells—recent developments
AIP Conf. Proc. 462, 378 (1999)
National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401;
42.
1999

Geisz J. F.; Friedman D. J.; Olson J. M.; Kramer C.; Kibbler A.; Kurtz Sarah R.

New materials for future generations of III-V solar cells
AIP Conf. Proc. 462, 372 (1999)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401;
43.
1999

Shan W.; Walukiewicz W.; Ager J. W.; Haller E. E.; Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz S. R.

Band Anticrossing in GaInNAs Alloys
Phys. Rev. Lett. 82, 1221 (1999)
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
44.
1999

Kurtz Steven R.; Allerman A. A.; Jones E. D.; Gee J. M.; Banas J. J.; Hammons B. E.

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
Appl. Phys. Lett. 74, 729 (1999)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0603;
45.
1998

Kurtz S. R.; Allerman A. A.; Biefeld R. M.; Baucom K. C.

High slope efficiency, “cascaded” midinfrared lasers with type I InAsSb quantum wells
Appl. Phys. Lett. 72, 2093 (1998)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601;
46.
1997

Yang R. Q.; Lin C-H.; Yang B. H.; Zhang D.; Murry S. J.; Pei S. S.; Felix C. L.; Bewley W. W.; Vurgaftman I.; Meyer J. R.; Allerman A. A.; Kurtz S. R.

High power mid-IR interband cascade lasers
Opt. Photon. News 8, 26 (1997)
Space Vacuum Epitaxy Center, Univ. of Houston, Texas
47.
1997

Kurtz S. R.; Allerman A. A.; Biefeld R. M.

Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions
Appl. Phys. Lett. 70, 3188 (1997)
Sandia National Laboratories, Albuquerque, New Mexico 87185-0603
48.
1997

Allerman Andrew A.; Biefeld Robert M.; Kurtz Steven R.

InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition
Proc. SPIE Int. Soc. Opt. Eng. 3001, 336 (1997)
Sandia National Labs. (USA)
49.
1997

Lin C.H. T.; Yang Rui Q.; Zhang Dongxu; Murry Stefan J.; Pei Shin Shem; Allerman Andrew A.; Kurtz Steven R.

Quantum cascade light-emitting diodes based on type-II quantum wells
Proc. SPIE Int. Soc. Opt. Eng. 3001, 289 (1997)
Univ. of Houston (USA)
50.
1997

Kurtz Sarah R.; McConnell Robert

Requirements for a 20%-efficient polycrystalline GaAs solar cell
AIP Conf. Proc. 404, 191 (1997)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401;
51.
1997

Friedman D. J.; Kurtz Sarah R.; Kibbler A. E.; Al-Jassim M.; Jones K.; Keyes B.; Matson R.

Polycrystalline MBE-grown GaAs for solar cells
AIP Conf. Proc. 394, 703 (1997)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
52.
1997

Kurtz Sarah R.; Friedman Daniel

Recent developments in terrestrial concentrator photovoltaics
AIP Conf. Proc. 394, 247 (1997)
National Renewable Energy Laboratory, Golden, Colorado 80401
53.
1996

Hjalmarson H. P.; Kurtz S. R.

Electron Auger processes in mid‐infrared InAsSb/InGaAs heterostructures
Appl. Phys. Lett. 69, 949 (1996)
Sandia National Laboratories, Albuquerque, New Mexico 87185‐0603;
54.
1996

Allerman A. A.; Biefeld R. M.; Kurtz S. R.

InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 69, 465 (1996)
Sandia National Laboratories, Albuquerque, New Mexico 87185‐0601;
55.
1996

Mao D.; Taylor P. C.; Kurtz Sarah R.; Wu M. C.; Harrison W. A.

Average local order parameter in partially ordered GaInP2
Phys. Rev. Lett. 76, 4769 (1996)
Department of Physics, University of Utah, Salt Lake City, Utah 84112
56.
1996

Kurtz S. R.; Biefeld R. M.; Allerman A. A.; Howard A. J.; Crawford M. H.; Pelczynski M. W.

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
Appl. Phys. Lett. 68, 1332 (1996)
Sandia National Laboratories, Albuquerque, New Mexico 87185
57.
1996

Friedman D. J.; Bertness K. A.; Kurtz Sarah R.; Kramer C.; Kibbler A. E.; Olson J. M.

30.2%‐Efficient GaInP/GaAs concentrator solar cells
AIP Conf. Proc. 353, 150 (1996)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
58.
1995

Kurtz S. R.; Biefeld R. M.; Howard A. J.

Magneto‐optical determination of light‐heavy hole splittings in As‐rich, InAsSb alloys and superlattices
Appl. Phys. Lett. 67, 3331 (1995)
Sandia National Laboratories, Albuquerque, New Mexico 87185‐0603;
59.
1995

Lyo S. K.; Kurtz S. R.

Effect of band nonparabolicity on the magnetoexciton binding energy in semiconductors
Phys. Rev. B 52, 14582 (1995)
Sandia National Laboratories, Albuquerque, New Mexico 87185
60.
1995

Sinha K.; Mascarenhas A.; Kurtz Sarah R.; Olson J. M.

Determination of free carrier concentration in n‐GaInP alloy by Raman scattering
J. Appl. Phys. 78, 2515 (1995)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
61.
1995

DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Williams J. E.; Meehan K.; Kurtz Sarah R.; Olson J. M.; Schneider R. P.; Wu M. C.; Hopkinson M.

Band gap of ‘‘completely disordered’’ Ga;0.52In0.48P
Appl. Phys. Lett. 66, 3185 (1995)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
62.
1995

Luo J. S.; Arent D. J.; Olson J. M.; Kurtz Sarah R.; Bertness K. A.; Raikh M. E.; Tsiper E. V.

Optical anisotropy and spontaneous ordering in Ga0.5In0.5P: An investigation using reflectance‐difference spectroscopy
Phys. Rev. B 51, 7603 (1995)
National Renewable Energy Laboratory, Golden, Colorado 80401
63.
1995

Kurtz S. R.; Biefeld R. M.; Dawson L. R.

Modification of valence‐band symmetry and Auger threshold energy in biaxially compressed InAs;1-;xSbx
Phys. Rev. B 51, 7310 (1995)
Sandia National Laboratories, Albuquerque, New Mexico 87185
64.
1995

Kurtz S. R.; Biefeld R. M.

Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
Appl. Phys. Lett. 66, 364 (1995)
Sandia National Laboratories, Albuquerque, New Mexico 87185
65.
1994

Sinha K.; Mascarenhas A.; Horner G. S.; Bertness K. A.; Kurtz Sarah R.; Olson J. M.

Raman line‐shape analysis of random and spontaneously ordered GaInP;2 alloy
Phys. Rev. B 50, 7509 (1994)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
66.
1994

Bertness K. A.; Kurtz Sarah R.; Friedman D. J.; Kibbler A. E.; Kramer C.; Olson J. M.

29.5%‐efficient GaInP/GaAs tandem solar cells
Appl. Phys. Lett. 65, 989 (1994)
National Renewable Energy Laboratory, Golden, Colorado 80401
67.
1994

Friedman D. J.; Horner G. S.; Kurtz Sarah R.; Bertness K. A.; Olson J. M.; Moreland J.

Effect of faceting on the band gap of ordered GaInP
Appl. Phys. Lett. 65, 878 (1994)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
68.
1994

Howard A. J.; Fritz I. J.; Kurtz S. R.; Hammons B. E.; Olsen J. A.; Drummond T. J.; Brennan T. M.

Molecular beam epitaxy grown III–V strain relaxed buffer layers and superlattices characterized by atomic force microscopy
J. Vac. Sci. Technol. A 12, 1003 (1994)
Sandia National Laboratories, Albuquerque, New Mexico 87185‐5800;
69.
1994

Sinha K.; Mascarenhas A.; Alonso R. G.; Horner G. S.; Bertness K. A.; Kurtz S. R.; Olson J. M.

The microstructure of spontaneously ordered GaInP2 alloy
AIP Conf. Proc. 306, 558 (1994)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
70.
1994

DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Williams J. E.; Meehan K.; Kurtz Sarah R.; Olson J. M.; Wu M. C.; Hopkinson M.

The band gap of ‘‘perfectly disordered’’ Ga;0.52In0.48P
AIP Conf. Proc. 306, 529 (1994)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
71.
1994

Friedman D. J.; Kurtz Sarah R.; Bertness K. A.; Kibbler A. E.; Kramer C.; Emery K.; Field H.; Olson J. M.

GaInP/GaAs tandem concentrator cells
AIP Conf. Proc. 306, 521 (1994)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
72.
1994

Bertness K. A.; Friedman D. J.; Kibbler A. E.; Kramer C.; Kurtz Sarah R.; Olson J. M.

High efficiency GaInP/GaAs tandem solar cells
AIP Conf. Proc. 306, 100 (1994)
National Renewable Energy Laboratory, Golden, Colorado 80401
73.
1994

Kurtz Sarah R.; Olson J. M.; Arent D. J.; Bode M. H.; Bertness K. A.

Low‐band‐gap Ga;0.5In0.5P grown on (511)B GaAs substrates
J. Appl. Phys. 75, 5110 (1994)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
74.
1994

Arent Douglas J.; Bode M.; Ahrenkiel P.; Ahrenkiel R.; Bertness Kristine A.; Kurtz Sarah R.; Kramer C.; Olson J. M.

Growth and characterization of spontaneously ordered AlInAs and GaInAs on InP
Proc. SPIE Int. Soc. Opt. Eng. 2140, 68 (1994)
National Renewable Energy Lab. (USA)
75.
1994

Kurtz S. R.; Biefeld R. M.; Dawson L. R.; Baucom K. C.; Howard A. J.

Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
Appl. Phys. Lett. 64, 812 (1994)
Sandia National Laboratories, Albuquerque, New Mexico 87185
76.
1993

Alonso R. G.; Mascarenhas A.; Horner G. S.; Bertness K. A.; Kurtz S. R.; Olson J. M.

Spontaneous ordering in GaInP2: A polarized‐piezomodulated‐reflectivity study
Phys. Rev. B 48, 11833 (1993)
National Renewable Energy Laboratory, Golden, Colorado 80401
77.
1993

Kurtz Sarah R.

Anomalous electroreflectance spectrum of spontaneously ordered Ga0.5In0.5P
J. Appl. Phys. 74, 4130 (1993)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
78.
1993

DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Hopkinson M.; David J. P. R.; Taylor P. C.; Kurtz Sarah R.; Olson J. M.

Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P
J. Appl. Phys. 73, 5163 (1993)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
79.
1993

Arent D. J.; Bode M.; Bertness K. A.; Kurtz Sarah R.; Olson J. M.

Band‐gap narrowing in ordered Ga;0.47In0.53As
Appl. Phys. Lett. 62, 1806 (1993)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401‐3393;
80.
1992

DeLong M. C.; Hogg R. A.; Mowbray D. J.; Hopkinson M.; Skolnick M. S.; Taylor P. C.; Olson J. M.; Kurtz Sarah R.; Kibbler A. E.

Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P
AIP Conf. Proc. 268, 332 (1992)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
81.
1992

Friedman D. J.; Kurtz S. R.; Kibbler A. E.; Olson J. M.

GaInP2/GaAs tandem cells: Problems and solutions
AIP Conf. Proc. 268, 326 (1992)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
82.
1992

Kurtz Sarah R.; Olson J. M.; Bertness K. A.; Friedman D. J.; Arent D. J.; Kibbler A. E.; Kramer C. M.

Overview of ordering and related anomalous properties of Ga0.5In0.5P
AIP Conf. Proc. 268, 132 (1992)
National Renewable Energy Laboratory, Golden, Colorado
83.
1992

Mowbray D. J.; Hogg R. A.; Skolnick M. S.; DeLong M. C.; Kurtz S. R.; Olson J. M.

Valence‐band splitting in ordered Ga;0.5In0.5P measured by polarized photoluminescence excitation spectroscopy
Phys. Rev. B 46, 7232 (1992)
Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom
84.
1992

Kurtz S. R.; Dawson L. R.; Biefeld R. M.; Follstaedt D. M.; Doyle B. L.

Ordering‐induced band‐gap reduction in InAs;1-;xSbx (x≊0.4) alloys and superlattices
Phys. Rev. B 46, 1909 (1992)
Sandia National Laboratories, Albuquerque, New Mexico 87185
85.
1992

Tycko Robert; Dabbagh Gary; Kurtz Sarah R.; Goral John P.

Quantitative study of atomic ordering in Ga0.5In0.5P thin films by 31P nuclear magnetic resonance
Phys. Rev. B 45, 13452 (1992)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
86.
1991

Kurtz S. R.; Biefeld R. M.

Infrared magneto‐optical and photoluminescence studies of the electronic properties of In(As,Sb) strained‐layer superlattices
Phys. Rev. B 44, 1143 (1991)
Sandia National Laboratories, Albuquerque, New Mexico 87185
87.
1990

Kurtz Sarah R.; Olson J. M.; Kibbler A.

Effect of growth rate on the band gap of Ga0.5In0.5P
Appl. Phys. Lett. 57, 1922 (1990)
Solar Energy Research Institute, Golden, Colorado 80401
88.
1990

Kurtz Sarah R.; Faine P.; Olson J. M.

Modeling of two‐junction, series‐connected tandem solar cells using top‐cell thickness as an adjustable parameter
J. Appl. Phys. 68, 1890 (1990)
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401
89.
1990

Nelson J. S.; Kurtz S. R.; Dawson L. R.; Lott J. A.

Demonstration of the effects of interface strain on band offsets in lattice‐matched III‐V semiconductor superlattices
Appl. Phys. Lett. 57, 578 (1990)
Sandia National Laboratories, Albuquerque, New Mexico 87185
90.
1990

Olson J. M.; Kurtz S. R.; Kibbler A. E.; Faine P.

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
Appl. Phys. Lett. 56, 623 (1990)
Solar Energy Research Institute, Golden, Colorado 80401
91.
1989

Patel D.; Chen J.; Kurtz S. R.; Olson J. M.; Quigley J. H.; Hafich M. J.; Robinson G. Y.

Photoluminescence in (Ga,In)P at high pressure
Phys. Rev. B 39, 10978 (1989)
Department of Physics, Colorado State University, Fort Collins, Colorado 80523
92.
1989

Kurtz Sarah R.; Olson J. M.; Kibbler A.

Elucidation of x‐ray diffraction data on the nature of the ordering of GaInP;2 and how the ordering relates to changes in the optical properties
Appl. Phys. Lett. 54, 718 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
93.
1988

Kurtz S. R.; Biefeld R. M.; Dawson L. R.; Fritz I. J.; Zipperian T. E.

High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors
Appl. Phys. Lett. 53, 1961 (1988)
Sandia National Laboratories, Albuquerque, New Mexico 87185
94.
1988

Kurtz S. R.; Osbourn G. C.; Biefeld R. M.; Lee S. R.

Photoluminescence and the band structure of InAsSb strained‐layer superlattices
Appl. Phys. Lett. 53, 216 (1988)
Sandia National Laboratories, Albuquerque, New Mexico 87185
95.
1988

Kurtz S. R.; Dawson L. R.; Zipperian T. E.; Lee S. R.

Demonstration of an InAsSb strained‐layer superlattice photodiode
Appl. Phys. Lett. 52, 1581 (1988)
Sandia National Laboratories, Albuquerque, New Mexico 87185
96.
1988

Ferm Paul M.; Kurtz Sarah R.; Pearlstine Kathryn A.; McClelland Gary M.

Summary Abstract: Infrared‐induced single‐phonon desorption of HD from LiF(100)
J. Vac. Sci. Technol. A 6, 835 (1988)
Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
97.
1988

Kurtz S. R.; Biefeld R. M.; Dawson L. R.; Osbourn G. C.; Stein H. J.

Extended infrared response of InAsSb strained‐layer superlattices
Appl. Phys. Lett. 52, 831 (1988)
Sandia National Laboratories, Albuquerque, New Mexico 87185
98.
1988

Ferm Paul M.; Kurtz Sarah R.; Pearlstine Kathryn A.; McClelland Gary M.

Erratum: Infrared‐induced single‐phonon desorption of HD from LiF(100) [Phys. Rev. Lett. ;58, 2602 (1987)]
Phys. Rev. Lett. 60, 243 (1988)
99.
1987

Kurtz S. R.; Hughes R. C.; Ortale C.; Schnepple W. F.

Time‐of‐flight x‐ray photoconductivity of HgI;2
J. Appl. Phys. 62, 4308 (1987)
Sandia National Laboratories, Albuquerque, New Mexico 87185
100.
1987

Ferm Paul M.; Kurtz Sarah R.; Pearlstine Kathryn A.; McClelland Gary M.

Infrared‐induced single‐phonon desorption of HD from LiF (100)
Phys. Rev. Lett. 58, 2602 (1987)
Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
101.
1987

Johnson D. J.; Kurtz S. R.; Sweeney M. A.

Conductivity of polyethylene terephthalate induced by high electron beam current densities
J. Appl. Phys. 61, 5314 (1987)
Sandia National Laboratories, Albuquerque, New Mexico 87185
102.
1987

Kepler R. G.; Zeigler J. M.; Harrah L. A.; Kurtz S. R.

Photocarrier generation and transport in σ;‐bonded polysilanes
Phys. Rev. B 35, 2818 (1987)
Sandia National Laboratories, Albuquerque, New Mexico 87185
103.
1986

Kurtz S. R.; Anderson R. A.

Radiation‐induced space charge in polymer film capacitors
Appl. Phys. Lett. 49, 1484 (1986)
Sandia National Laboratories, Albuquerque, New Mexico 87185
104.
1986

Kurtz Sarah R.; Tsuo Y. Simon; Tsu Raphael

Correlation of stress with light‐induced defects in hydrogenated amorphous silicon films
Appl. Phys. Lett. 49, 951 (1986)
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401
105.
1986

Kurtz S. R.; Anderson R. A.

Properties of the metal–polymer interface observed with space‐charge mapping techniques
J. Appl. Phys. 60, 681 (1986)
Sandia National Laboratories, Albuquerque, New Mexico 87185
106.
1986

Kurtz Sarah R.; Proscia James; Gordon Roy G.

Chemical vapor deposition of hydrogenated amorphous silicon
J. Appl. Phys. 59, 249 (1986)
Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
107.
1985

Pike G. E.; Kurtz S. R.; Gourley P. L.; Philipp H. R.; Levinson Lionel M.

Electroluminescence in ZnO varistors: Evidence for hole contributions to the breakdown mechanism
J. Appl. Phys. 57, 5512 (1985)
Sandia National Laboratories, Albuquerque, New Mexico 87185
108.
1985

Kurtz S. R.

Observation of electron transport in polyethylene terephthalate and the radiation hardening of dielectrics
Appl. Phys. Lett. 46, 1105 (1985)
Sandia National Laboratories, Albuquerque, New Mexico 87185
109.
1985

Kurtz S. R.; Arnold C.

Photocarrier transport and trapping processes in doped polyethylene terephthalate films
J. Appl. Phys. 57, 2532 (1985)
Sandia National Laboratories, Albuquerque, New Mexico 87185
110.
1984

Anderson R. A.; Kurtz S. R.

Direct observation of field‐injected space charge in a metal‐insulator‐metal structure
J. Appl. Phys. 56, 2856 (1984)
Sandia National Laboratories, Albuquerque, New Mexico 87185
111.
1983

Kurtz S. R.; Arnold C.; Hughes R. C.

Effect of chemical doping on the radiation‐induced conductivity of polyethylene terephthalate
Appl. Phys. Lett. 43, 1132 (1983)
Sandia National Laboratories, Albuquerque, New Mexico 87185
112.
1983

Pike G. E.; Gourley P. L.; Kurtz S. R.

Impact ionization near GaAs grain boundaries
Appl. Phys. Lett. 43, 939 (1983)
Sandia National Laboratories, Albuquerque, New Mexico 87185
113.
1983

Kurtz S. R.; Hughes R. C.

Radiation‐induced photoconductivity in polymers; Poly(vinylidene fluoride) compared with polyethylene terephthalate
J. Appl. Phys. 54, 229 (1983)
Sandia National Laboratories, Albuquerque, New Mexico 87185

Co-authors

Co-publications
30

Olson, Jerry M.
23

Friedman, Daniel J.
23

Allerman, Andrew A.
15

Biefeld, RM
11

Geisz, John F.
9

Jones, Eric D.
6

Kaplar, RJ
5

Johnston, Steven W.
5

Hogg, RA
5

Koleske, Daniel D.
5

Mowbray, DJ
5

Mascarenhas, Angelo
5

Skolnick, Maurice S.
4

Shan, W
4

Howard, A. J.