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Khan, Aurangzeb

Computed

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Research Profile

Latest Publications

1.
2007

Adivarahan Vinod; Fareed Qhalid; Islam Monirul; Katona Thomas; Krishnan Balakrishnan; Khan Asif

Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
Jpn. J. Appl. Phys., Part 2 46, L877 (2007)
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
2.
2007

Fareed Qhalid; Adivarahan Vinod; Gaevski Mikhail; Katona Thomas; Mei Jin; Ponce Fernando A.; Khan Asif

Metal–Organic Hydride Vapor Phase Epitaxy of Al;xGa1-xN Films over Sapphire
Jpn. J. Appl. Phys., Part 2 46, L752 (2007)
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
3.
2007

Lee Hae-Seok; Yamaguchi Masafumi; Ekins-Daukes Nicholas J.; Khan Aurangzeb; Takamoto Tatsuya; Imaizumi Mitsuru; Ohshima Takeshi; Itoh Hisayoshi

Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
Jpn. J. Appl. Phys., Part 2 46, L645 (2007)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan

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All Publications

1.
2007

Adivarahan Vinod; Fareed Qhalid; Islam Monirul; Katona Thomas; Krishnan Balakrishnan; Khan Asif

Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
Jpn. J. Appl. Phys., Part 2 46, L877 (2007)
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
2.
2007

Fareed Qhalid; Adivarahan Vinod; Gaevski Mikhail; Katona Thomas; Mei Jin; Ponce Fernando A.; Khan Asif

Metal–Organic Hydride Vapor Phase Epitaxy of Al;xGa1-xN Films over Sapphire
Jpn. J. Appl. Phys., Part 2 46, L752 (2007)
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
3.
2007

Lee Hae-Seok; Yamaguchi Masafumi; Ekins-Daukes Nicholas J.; Khan Aurangzeb; Takamoto Tatsuya; Imaizumi Mitsuru; Ohshima Takeshi; Itoh Hisayoshi

Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
Jpn. J. Appl. Phys., Part 2 46, L645 (2007)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
4.
2007

Khan Aurangzeb; Gou J.; Imazumi M.; Yamaguchi M.

Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN
Appl. Phys. Lett. 91, 043503 (2007)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
5.
2007

Adivarahan Vinod; Fareed Qhalid; Srivastava Surendra; Katona Thomas; Gaevski Mikhail; Khan Asif

Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
Jpn. J. Appl. Phys., Part 2 46, L537 (2007)
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
6.
2007

Khan Aurangzeb; Kurtz Sarah R.; Prasad S.; Johnston S. W.; Gou Jihua

Correlation of nitrogen related traps in InGaAsN with solar cell properties
Appl. Phys. Lett. 90, 243509 (2007)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
7.
2007

Khan Aurangzeb; Freundlich A.; Gou Jihua; Gapud A.; Imazumi M.; Yamaguchi M.

Self-annihilation of electron-irradiation-induced defects in InAsxP1-x;/;InP multiquantum well solar cells
Appl. Phys. Lett. 90, 233111 (2007)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
8.
2006

Shatalov Maxim; Adivarahan Vinod; Gaevski Mikhail; Khan Asif

Room-Temperature Stimulated Emission from AlN at 214 nm
Jpn. J. Appl. Phys., Part 2 45, L1286 (2006)
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A
9.
2006

Chen Z.; Qhalid Fareed R. S.; Gaevski M.; Adivarahan V.; Yang J. W.; Khan Asif; Mei J.; Ponce F. A.

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
Appl. Phys. Lett. 89, 081905 (2006)
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208
10.
2006

Khan Aurangzeb; Freundlich A.

Carrier loss channels for non-collected carrier in InAsxP1-x;/;InP multiquantum well solar cells
Appl. Phys. Lett. 88, 103504 (2006)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
11.
2005

Lee H. S.; Yamaguchi M.; Ekins-Daukes N. J.; Khan A.; Takamoto T.; Agui T.; Kamimura K.; Kaneiwa M.; Imaizumi M.; Ohshima T.; Itoh H.

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells
J. Appl. Phys. 98, 093701 (2005)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
12.
2005

Adachi M.; Khan A.; Ando K.; Ekins-Daukes N. J.; Lee H. S.; Yamaguchi M.

Electrical and optical properties of radiation-induced dominant recombination center in InxGa1-x;P space solar cells
Phys. Rev. B 72, 155320 (2005)
Venture Business Laboratory, Tottori University, Koyama, Tottori 680, Japan
13.
2005

Koley G.; Lakshmanan L.; Spencer M. G.; Cha Ho-Young; Simin G.; Koudymov A.; Gaevski M.; Tipirneni N.; Khan A.

Nanoscale Capacitance–Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures
Jpn. J. Appl. Phys., Part 2 44, L1348 (2005)
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
14.
2005

Bilenko Yuriy; Lunev Alex; Hu Xuhong; Deng Jianyu; Katona Thomas M; Zhang Jianping; Gaska Remis; Shur Michael S; Sun Wenhong; Adivarahan Vinod; Shatalov Maxim; Khan Asif

10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
Jpn. J. Appl. Phys., Part 2 44, L98 (2005)
Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
15.
2004

Khan Aurangzeb; Marupaduga S.; Anandakrishnan S. S.; Alam M.; Ekins-Daukes N. J.; Lee H. S.; Sasaki T.; Takamoto T.; Agui T.; Kamimura K.; Kaneiwa M.; Yamaguchi M.; Imazumi M.

Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics
Appl. Phys. Lett. 85, 5218 (2004)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
16.
2004

Khan Aurangzeb; Yamaguchi Masafumi; Takamoto Tatsuya

Performance of single-junction and dual-junction InGaP/;GaAs solar cells under low concentration ratios
Appl. Phys. Lett. 85, 3098 (2004)
Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688
17.
2004

Ekins-Daukes N. J.; Lee H. S.; Sasaki T.; Yamaguchi M.; Khan A.; Takamoto T.; Agui T.; Kamimura K.; Kaneiwa M.; Imaizumi M.; Ohshima T.; Kamiya T.

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation
Appl. Phys. Lett. 85, 2511 (2004)
Toyota Technological Institute 2-12-1 Hisakata, Tempaku-ku Nagoya, 468-8511, Japan
18.
2003

Tamulaitis G.; Yilmaz I.; Shur M. S.; Gaska R.; Chen C.; Yang J.; Kuokstis E.; Khan A.; Schujman S. B.; Schowalter L. J.

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities
Appl. Phys. Lett. 83, 3507 (2003)
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180;
19.
2002

Gaska R.; Chen C.; Yang J.; Kuokstis E.; Khan A.; Tamulaitis G.; Yilmaz I.; Shur M. S.; Rojo J. C.; Schowalter L. J.

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
Appl. Phys. Lett. 81, 4658 (2002)
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209;
20.
2002

Khan Aurangzeb; Yamaguchi Masafumi; Dharmaso Nothaj; Bourgoin Jacques; Ando Koshi; Takamoto Tatsuya

Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation‐Induced Defects in p‐InGaP and InGaP‐based Solar Cells
Jpn. J. Appl. Phys., Part 1 41, 1241 (2002)
Toyota Technological Institute, 2‐12‐1 Hisakata, Tempaku, Nagoya 468‐8511, Japan;
21.
2002

Dharmarasu Nethaji; Khan A.; Yamaguchi Masafumi; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

Effects of proton irradiation on n⁺p InGaP solar cells
J. Appl. Phys. 91, 3306 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
22.
2002

Khan Aurangzeb; Yamaguchi Masafumi; Bourgoin Jacques C.; Takamoto Tatsuya

Thermal annealing study of 1 MeV electron-irradiation-induced defects in n⁺p InGaP diodes and solar cells
J. Appl. Phys. 91, 2391 (2002)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
23.
2001

Simin Grigory; Hu Xuhong; Tarakji Ahmad; Zhang Jianping; Koudymov Alexey; Saygi Salih; Yang Jinwei; Khan Asif; Shur Michael S.; Gaska Remis

AlGaN/InGaN/GaN Double Heterostructure Field‐Effect Transistor
Jpn. J. Appl. Phys., Part 2 40, L1142 (2001)
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
24.
2001

Dharmarasu Nethaji; Yamaguchi Masafumi; Khan Aurangzeb; Yamada Takashi; Tanabe Tatsuya; Takagishi Shigenori; Takamoto Tatsuya; Ohshima Takeshi; Itoh Hisayoshi; Imaizumi Mitsuru; Matsuda Sumio

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
Appl. Phys. Lett. 79, 2399 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
25.
2001

Khan Aurangzeb; Yamaguchi Masafumi; Ohshita Y.; Imaizumi M.; Ohshima T.; Itoh Hisayoshi; Abe Takao; Araki K.; Dharmarasu N.; Matsuda S.

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
J. Appl. Phys. 90, 1170 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
26.
2001

Khan Aurangzeb; Imaizumi Mitsuru; Ohshima Takeshi; Itoh Hisayoshi; Takagishi Shigenori; Tanabe Tatsuya; Yamada Takashi; Dharmaras Nathaji; Yamaguchi Masafumi; Matsuda Sumio

Radiation Resistant Low Bandgap InGaAsP Solar Cell for Multi-Junction Solar Cells
Jpn. J. Appl. Phys., Part 2 40, L728 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
27.
2001

Khan Aurangzeb; Yamaguchi Masafumi; Bourgoin Jacques C.; Ando Koshi; Takamoto Tatsuya

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP
J. Appl. Phys. 89, 4263 (2001)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
28.
2001

Gaska R.; Shur M. S.; Hu X.; Yang J. W.; Tarakji A.; Simin G.; Khan A.; Deng J.; Werner T.; Rumyantsev S.; Pala N.

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors
Appl. Phys. Lett. 78, 769 (2001)
Sensor Electronic Technology, Incorporated, Latham, New York 12110;
29.
2000

Khan Aurangzeb; Annzawa Osamu; Abe Takao; Saga Tatsue; Kaneiwa Minoru; Yamaguchi Masafumi; Matsuda Sumio

Erratum: “Influence of the dopant species on radiation-induced defects in Si single crystals” [J. Appl. Phys. ;87, 8389 (2000)]
J. Appl. Phys. 88, 3785 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
30.
2000

Khan Aurangzeb; Annzawa Osamu; Abe Takao; Saga Tatsue; Kaneiwa Minoru; Yamaguchi Masafumi; Matsuda Sumio

Influence of the dopant species on radiation-induced defects in Si single crystals
J. Appl. Phys. 87, 8389 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
31.
2000

Zhou L.; Lanford W.; Ping A. T.; Adesida I.; Yang J. W.; Khan A.

Low resistance Ti/Pt/Au ohmic contacts to p-type GaN
Appl. Phys. Lett. 76, 3451 (2000)
Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois, Urbana, Illinois 61801;
32.
2000

Khan Aurangzeb; Kojima Nobuaki; Yamaguchi Masafumi; Narayanan K. L.; Goetzberger Oliver

High-energy electron irradiation effects in C60 films
J. Appl. Phys. 87, 4620 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
33.
2000

Khan Aurangzeb; Yamaguchi Masafumi; Bourgoin Jacques C.; de Angelis N.; Takamoto Tatsuya

Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
Appl. Phys. Lett. 76, 2559 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
34.
2000

Khan Aurangzeb; Yamaguchi Masafumi; Hisamatsu Tadashi; Matsuda Sumio

Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation
J. Appl. Phys. 87, 2162 (2000)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
35.
1999

Yamaguchi Masafumi; Khan Aurangzeb; Taylor Stephen J.; Ando Koshi; Yamaguchi Tsutomu; Matsuda Sumio; Aburaya Takashi

Deep level analysis of radiation-induced defects in Si crystals and solar cells
J. Appl. Phys. 86, 217 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8611, Japan
36.
1999

Khan Aurangzeb; Yamaguchi Masafumi; Taylor Stephen J.; Hisamatsu Tadashi; Matsuda Sumio

Effects of annealing on type converted Si and space solar cells irradiated with heavy fluence 1 MeV electrons
Jpn. J. Appl. Phys., Part 1 38, 2679 (1999)
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
37.
1999

Shao Xiaoping; Barteau M. A.; Kaba M.; Berger Paul R.; Kolodzey J.; Roe K.; Khan A.-S.; Orner B. A.; Hits D.; Dashiell M.; Jonczyk Ralf; Unruh K. M.

Strain modification in thin Si1-x-y;GexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots
J. Appl. Phys. 85, 578 (1999)
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716
38.
1998

Khan Aurangzeb; Iqbal Mohd Zafar; Qurashi Umar Saeed; Yamaguchi Masafumi; Zafar Nasim; Dadgar Armin; Bimberg D.

Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition
Jpn. J. Appl. Phys., Part 1 37, 4595 (1998)
Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan
39.
1996

Khan Al-Sameen T.; Berger Paul R.; Guarin Fernando J.; Iyer Subramanian S.

Band‐edge photoluminescence from pseudomorphic Si;0.96Sn0.04 alloy
Appl. Phys. Lett. 68, 3105 (1996)
Department of Electrical Engineering, University of Delaware, Newark, Delaware 19716
40.
1994

Gao Wei; Khan Al-Sameen; Berger Paul R.; Hunsperger R. G.; Zydzik George; O'Bryan H. M.; Sivco D.; Cho A. Y.

In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts
Appl. Phys. Lett. 65, 1930 (1994)
University of Delaware, Department of Electrical Engineering, Newark, Delaware 19716

Co-authors

Co-publications
21

Yamaguchi, Masafumi
9

Matsuda, Sumio
7

Imaizumi, Mitsuru
7

Takamoto, Tatsuya
7

Ohshima, Takeshi
6

Adivarahan, Vinod
6

Itoh, Hisayoshi
5

Gaska, Remis
5

Ekins-Daukes, NJ
5

Gaevski, Mikhail
5

Shur, Michael
4

Katona, Thomas M.
4

Takamoto, Tatsuya
4

Lee, HS
4

Ando, Koshi