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Kim, Tae Whan

Computed

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Research Profile

Latest Publications

1.
2011

Jang Sang Hyun; Jin Jun; Kim Kyoung Won; Kim Hyun Woo; You Joo Hyung; Lee Keun Woo; Kim Tae Whan

Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride--Aluminum Oxide--Silicon Nitride--Silicon Oxide--Silicon Flash Memory Devices
Jpn. J. Appl. Phys., Part 1 50, 124202 (2011)
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
2.
2011

Choo Dong Chul; Ko Yo Sub; Kim Tae Whan

Electrical and Optical Properties of WOLEDs with a Hybrid EML Consisting of Small Molecules
J. Electrochem. Soc. 158, J326 (2011)
Department of Electronics and Computer Engineering and
3.
2011

Wu Chaoxing; Li Fushan; Guo Tailiang; Kim Tae Whan

Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer
Jpn. J. Appl. Phys., Part 1 50, 095003 (2011)
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People's Republic of China

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All Publications

1.
2011

Jang Sang Hyun; Jin Jun; Kim Kyoung Won; Kim Hyun Woo; You Joo Hyung; Lee Keun Woo; Kim Tae Whan

Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride--Aluminum Oxide--Silicon Nitride--Silicon Oxide--Silicon Flash Memory Devices
Jpn. J. Appl. Phys., Part 1 50, 124202 (2011)
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
2.
2011

Choo Dong Chul; Ko Yo Sub; Kim Tae Whan

Electrical and Optical Properties of WOLEDs with a Hybrid EML Consisting of Small Molecules
J. Electrochem. Soc. 158, J326 (2011)
Department of Electronics and Computer Engineering and
3.
2011

Wu Chaoxing; Li Fushan; Guo Tailiang; Kim Tae Whan

Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer
Jpn. J. Appl. Phys., Part 1 50, 095003 (2011)
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People's Republic of China
4.
2011

Jung Jae Hun; Kim Tae Whan

The effect of the trap density and depth on the current bistability in organic bistable devices
J. Appl. Phys. 110, 043721 (2011)
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea
5.
2011

Kim Sung Ho; You Joo Hyung; Kim Tae Whan

Decrease in Interference Effects between Cells for Metal--Oxide--Nitride--Oxide--Silicon NAND Flash Memory Devices with Metal Spacer Layers
Jpn. J. Appl. Phys., Part 1 50, 074301 (2011)
National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
6.
2011

Yun Dong Yeol; Son Jung Min; Kim Tae Whan; Kim Sung Woo; Kim Sang Wook

Charge trapping process of nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites
Appl. Phys. Lett. 98, 243306 (2011)
Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea
7.
2011

Park Keun Kab; Jung Jae Hun; Kim Tae Whan

Memory effects and carrier transport mechanisms of write-once- read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
Appl. Phys. Lett. 98, 193301 (2011)
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea
8.
2010

Kim Kyeong Rok; You Joo Hyung; Kwack Kae Dal; Kim Tae Whan

Multibit Polycristalline Silicon–Oxide–Silicon Nitride–Oxide–Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate
Jpn. J. Appl. Phys., Part 1 49, 104203 (2010)
National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
9.
2010

Kim Hyun Joo; You Joo Hyung; Kwack Kae Dal; Kim Tae Whan

Nanoscale Two-Bit/Cell NAND Silicon–Oxide–Nitride–Oxide–Silicon Devices Designed on Fully Depleted Silicon-on-Insulator Substrates
Jpn. J. Appl. Phys., Part 1 49, 094201 (2010)
Department of Information Display Engineering, Hanyang University, Seoul 133-791, Korea
10.
2010

Yuk J. M.; Lee J. Y.; Kim Y.; No Y. S.; Kim T. W.; Choi W. K.

Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates
Appl. Phys. Lett. 97, 061901 (2010)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
11.
2010

Tackeuchi Atsushi; Yoo Chan Ho; Kim Tae Whan; Kwon Young Hae; Kang Tae Won; Nukui Takao; Fujita Taisuke; Nakazato Yoshiaki; Saeki Yu; Izumi Sotaro

Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
Jpn. J. Appl. Phys., Part 1 49, 070201 (2010)
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
12.
2010

Son Dong Ick; You Chan Ho; Jung Jae Hun; Kim Tae Whan

Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites
Appl. Phys. Lett. 97, 013304 (2010)
Department of Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
13.
2010

Kim Won Tae; Jung Jae Hun; Kim Tae Whan; Son Dong Ick

Current bistability and carrier transport mechanisms of organic bistable devices based on hybrid Ag nanoparticle-polymethyl methacrylate polymer nanocomposites
Appl. Phys. Lett. 96, 253301 (2010)
Department of Electronics and Computer Engineering, National Research Laboratory for Nano Quantum Electronics Devices, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
14.
2010

Yun Dong Yeol; Jung Jae Hun; Lee Dea Uk; Kim Tae Whan; Ryu E. D.; Kim S. W.

Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer
Appl. Phys. Lett. 96, 123302 (2010)
National Research Laboratory for Nano Quantum Electronics Devices, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea
15.
2009

You J. H.; Woo J. T.; Kim T. W.; Yoo K. H.; Lee H. S.; Park H. L.

Strain distributions and interband transitions of CdxZn1-xTe/ZnTe asymmetric double quantum dots with different degree of coupling
J. Appl. Phys. 106, 113530 (2009)
Department of Electronics and Communications Engineering, National Research Laboratory for Nano Quantum Electronics Devices, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
16.
2009

Li Fushan; Son Dong Ick; Kim Tae Whan; Ryu Euidock; Kim Sang Wook; Lee Sun Kyun; Cho Yong Hoon

Photovoltaic cells fabricated utilizing core-shell CdSe/ZnSe quantum dot/multiwalled carbon nanotube heterostructures
Appl. Phys. Lett. 95, 061911 (2009)
Division of Electronics and Computer Engineering, National Research Laboratory for Nano Quantum Electronics, Hanyang University, Seoul 133-791, Republic of Korea
17.
2009

Kim Won Tae; Jung Jae Hun; Kim Tae Whan

Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer
Appl. Phys. Lett. 95, 022104 (2009)
National Research Laboratory for Nano Quantum Electronics, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
18.
2009

Son Dong Ick; You Chan Ho; Kim Won Tae; Jung Jae Hun; Kim Tae Whan

Electrical bistabilities and memory mechanisms of organic bistable devices based on colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites
Appl. Phys. Lett. 94, 132103 (2009)
Department of Information Display Engineering, National Research Laboratory for Nano Quantum Electronics, and Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
19.
2009

Ham Jung Hoon; Oh Do Hyun; Cho Sung Hwan; Jung Jae Hun; Kim Tae Whan; Ryu Eui Dock; Kim Sang Wook

Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP–ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer
Appl. Phys. Lett. 94, 112101 (2009)
Nano Quantum Electronics Laboratory, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
20.
2009

Li Fushan; Cho Sung Hwan; Son Dong Ick; Kim Tae Whan; Lee Sun-Kyun; Cho Yong-Hoon; Jin Sungho

UV photovoltaic cells based on conjugated ZnO quantum dot/multiwalled carbon nanotube heterostructures
Appl. Phys. Lett. 94, 111906 (2009)
National Research Laboratory for Nano Quantum Electronics, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
21.
2009

You J. H.; Woo J. T.; Kim T. W.; Yoo K. H.; Lee H. S.; Park H. L.

Interband transition energies and carrier distributions of CdxZn1-x;Te/ZnTe quantum wires
J. Appl. Phys. 105, 063522 (2009)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
22.
2008

Yuk J. M.; Lee J. Y.; No Y. S.; Kim T. W.; Choi W. K.

Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to thermal treatment
Appl. Phys. Lett. 93, 221910 (2008)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
23.
2008

Won Shin Jae; Lee Jeong Yong; Oh Do Hyun; Kim Tae Whan; Cho Woon Jo

Shrinkage and expansion mechanisms of SiO2 elliptical membrane nanopores
Appl. Phys. Lett. 93, 221903 (2008)
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
24.
2008

Park Kyu Ha; Jung Jae Hun; Li Fushan; Son Dong Ick; Kim Tae Whan

Carrier transport mechanisms of nonvolatile memory devices based on nanocomposites consisting of ZnO nanoparticles with polymethylmethacrylate nanocomposites sandwiched between two C60 layers
Appl. Phys. Lett. 93, 132104 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
25.
2008

Kim Kyeong-Rok; Kwack Kae Dal; Kim Tae Whan

High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain
Jpn. J. Appl. Phys., Part 1 47, 6262 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
26.
2008

Kurbanov S. S.; Panin G. N.; Kim T. W.; Kang T. W.

Impact of visible light illumination on ultraviolet emission from ZnO nanocrystals
Phys. Rev. B 78, 045311 (2008)
Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100715, Republic of Korea
27.
2008

Li Fushan; Son Dong Ick; Kim Bong Jun; Kim Tae Whan

Nonvolatile electrical bistability and operating mechanism of memory devices based on CdSe/ZnS nanoparticle/polymer hybrid composites
Appl. Phys. Lett. 93, 021913 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
28.
2008

Yuk J. M.; Lee J. Y.; No Y. S.; Kim T. W.; Choi W. K.

Evolution mechanisms of the surface morphology of grains in ZnO thin films grown on p-InP substrates due to thermal annealing
Appl. Phys. Lett. 93, 021904 (2008)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
29.
2008

Kurbanov Saidislam; Panin Gennady; Kang Tae Won; Kim Tae Whan

Modulation of Excitonic Emission from ZnO Nanocrystals by Visible Light Illumination
Jpn. J. Appl. Phys., Part 1 47, 3760 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
30.
2008

Yuk J. M.; Lee J. Y.; No Y. S.; Kim T. W.; Choi W. K.

Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p‐;InP (100) substrates
J. Appl. Phys. 103, 083535 (2008)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
31.
2008

Yuk J. M.; Lee J. Y.; Jung J. H.; Lee D. U.; Kim T. W.; Son D. I.; Choi W. K.

Formation mechanism of ZnSiO3 nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n-Si (001) substrate due to thermal treatment
J. Appl. Phys. 103, 083520 (2008)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
32.
2008

Lee K. H.; Lee J. Y.; Jung J. H.; Kim T. W.; Jeon H. C.; Kang T. W.

Atomic arrangements of (Ga1-x;Mnx)N nanorods grown on Al2O3 substrates
Appl. Phys. Lett. 92, 141919 (2008)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
33.
2008

Li Fushan; Son Dong-Ick; Leem Jae-Hyeon; Kim Tae Whan; Dong Wenguo; Kim Young-Ho

Enhanced ultraviolet emission from ZnO nanocrystals embedded in a hybrid polymer composite layer
J. Appl. Phys. 103, 073511 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
34.
2008

Li Fushan; Cho Sung Hwan; Son Dong Ick; Park Kyu Ha; Kim Tae Whan

Multilevel nonvolatile memory effects in hybrid devices containing CdSe/;ZnS nanoparticle double arrays embedded in the C60 matrices
Appl. Phys. Lett. 92, 102110 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea
35.
2008

Lee H. S.; Park H. L.; Kim T. W.

The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/;ZnTe quantum dots
Appl. Phys. Lett. 92, 052108 (2008)
Department of Physics, Yonsei University, Seoul 120-749 Korea
36.
2008

Kim T. W.; Jung J. H.; Yoon C. S.; Kim Y.-H.

Multilevel charging and discharging mechanisms of vertically stacked Ni1-x;Fex self-assembled nanoparticle arrays embedded in polyimide layers
Appl. Phys. Lett. 92, 042103 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
37.
2008

Li Fushan; Kim Tae Whan; Dong Wenguo; Kim Young-Ho

Formation and electrical bistability properties of ZnO nanoparticles embedded in polyimide nanocomposites sandwiched between two C60 layers
Appl. Phys. Lett. 92, 011906 (2008)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea
38.
2007

Mun Kyung Sik; Kim Jae-Ho; Kim Tae Whan; Kwack Kae Dal

Design of Unique Four-Bit/Cell Polycrystalline Silicon–Oxide–Silicon Nitride–Oxide–Silicon Devices Utilizing Vertical Channel of Silicon Pillar
Jpn. J. Appl. Phys., Part 1 46, 7237 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
39.
2007

Lee H. S.; Park H. L.; Lee I.; Kim T. W.

Formation and optical properties of CdTe/;ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates
J. Appl. Phys. 102, 103507 (2007)
Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea
40.
2007

Jung J. H.; Kim H. J.; Kim B. J.; Kim T. W.; Kim Y.-H.

Carrier transport mechanisms of the writing and the erasing processes for Al/;ZnO nanoparticles embedded in a polyimide layer/p-Si diodes
Appl. Phys. Lett. 91, 182107 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
41.
2007

Li Fushan; Son Dong-Ick; Ham Jung-Hun; Kim Bong-Jun; Jung Jae Hun; Kim Tae Whan

Memory effect of nonvolatile bistable devices based on CdSe/;ZnS nanoparticles sandwiched between C60 layers
Appl. Phys. Lett. 91, 162109 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
42.
2007

Shin J. W.; Lee J. Y.; Jung J. H.; Lee I.; Kim T. W.; Lee H. S.; Kim M. D.

Formation mechanisms of self-assembled ZnSe nanostructures on Cl-doped ZnSe thin films grown on (100) GaAs substrates
Appl. Phys. Lett. 91, 141921 (2007)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
43.
2007

Li Fushan; Son Dong-Ik; Seo Seung-Mi; Cha Han-Moe; Kim Hyuk-Ju; Kim Bong-Jun; Jung Jae Hun; Kim Tae Whan

Organic bistable devices based on core/shell CdSe/;ZnS nanoparticles embedded in a conducting poly(N-vinylcarbazole) polymer layer
Appl. Phys. Lett. 91, 122111 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
44.
2007

Woo J. T.; Song S. H.; Lee I.; Kim T. W.; Yoo K. H.; Lee H. S.; Park H. L.

Strain distributions and electronic subband energies of self-assembled CdTe quantum wires grown on ZnTe buffer layers
J. Appl. Phys. 102, 033521 (2007)
Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
45.
2007

Kurbanov Saidislam; Panin Gennady; Kim Tae Whan; Kang Tae Won

Thermo- and Photo-annealing of ZnO Nanocrystals
Jpn. J. Appl. Phys., Part 1 46, 4172 (2007)
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
46.
2007

Li Fushan; Son Dong-Ick; Cha Han-Moe; Seo Seung-Mi; Kim Bong-Jun; Kim Hyuk-Ju; Jung Jae-Hun; Kim Tae Whan

Memory effect of CdSe/;ZnS nanoparticles embedded in a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer
Appl. Phys. Lett. 90, 222109 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
47.
2007

Jung J. H.; Kim T. W.; Song M. S.; Kim Y.-H.; Yoo K. H.

Optical properties of self-assembled Cu2O nanocrystals embedded in a polyimide layer
J. Appl. Phys. 101, 093708 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
48.
2007

Lee H. S.; Park H. L.; Kim T. W.

Dimensional transition of CdxZn1-x;Te nanostructures grown on ZnTe layers
Appl. Phys. Lett. 90, 181909 (2007)
Department of Physics, Yonsei University, Seoul 120-749, Korea
49.
2007

Shin J. W.; Lee J. Y.; No Y. S.; Jung J. H.; Kim T. W.; Choi W. K.

Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on ;p-Si substrates due to thermal treatment
Appl. Phys. Lett. 90, 181907 (2007)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
50.
2007

Yoon Young Bae; Choo Dong Chul; Kim Tae Whan; Lee Hyun Koo; Kim Jun Ho; Kim Young Kwan

Efficiency Enhancement Mechanism in Yellow Organic Light-Emitting Devices with Multiple Heterostructures Acting as an Emitting Layer
Jpn. J. Appl. Phys., Part 1 46, 654 (2007)
Research Institute of Information Display, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
51.
2007

Kim Tae Whan; Shin Jae Won; Lee Jeong Yong; Jung Jae Hun; Lee Jung Wook; Choi Won Kook; Jin Sungho

Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer
Appl. Phys. Lett. 90, 051915 (2007)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
52.
2007

Jeon H. C.; Kang T. W.; Kim T. W.; Yu Y.-J.; Jhe W.; Song S. A.

Magnetic and optical properties of (Ga1-x;Mnx)As diluted magnetic semiconductor quantum wires with above room ferromagnetic transition temperature
J. Appl. Phys. 101, 023508 (2007)
Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea and Department of Physics, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Korea
53.
2007

Yuk J. M.; Lee J. Y.; Jung J. H.; Kim T. W.; Son D. I.; Choi W. K.

Initial formation mechanisms of the supersaturation region and the columnar structure in ZnO thin films grown on n-Si (001) substrates
Appl. Phys. Lett. 90, 031907 (2007)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
54.
2006

Kim T. W.; Lee H. S.; Park H. L.

Enhancement of the activation energy due to coupling effects in CdxZn1-x;Te/;ZnTe double quantum dots
J. Appl. Phys. 100, 113505 (2006)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
55.
2006

Lee H. S.; Park H. L.; Kim T. W.

Optical properties of CdTe/;ZnTe quantum dots sandwiched between two quantum wells with ZnTe separation barriers
Appl. Phys. Lett. 89, 181929 (2006)
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
56.
2006

Jung Jae Hun; Kim Jae-Ho; Kim Tae Whan; Song Mun Seop; Kim Young-Ho; Jin Sungho

Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer
Appl. Phys. Lett. 89, 122110 (2006)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
57.
2006

Kim J. H.; Woo J. T.; Kim T. W.; Yoo K. H.; Lee Y. T.

Three-dimensional electronic properties of multiple vertically stacked InAs/;GaAs self-assembled quantum dots
J. Appl. Phys. 100, 063716 (2006)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
58.
2006

Jeon Hee Chang; Kang Tae Won; Yuldashev Sh. U.; Kim Tae Whan; Jin Sungho

Magnetotransport properties of zinc-blende-structured MnAs films with half-metallic characteristics
Appl. Phys. Lett. 89, 112517 (2006)
Quantum-functional Semiconductor Research Center, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Korea and Department of Physics, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Korea
59.
2006

Tackeuchi Atsushi; Miyata Shogo; Sugawa Seiji; Kusunoki Koji; Kim Tae Whan; Kim Jae-Ho; Lee Hong Seok; Park Hong Lee

Thermally activated carrier transfer among CdTe/;ZnTe self-organized quantum dots
Appl. Phys. Lett. 89, 112125 (2006)
Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
60.
2006

Shin J. W.; Lee J. Y.; No Y. S.; Kim T. W.; Choi W. K.

Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates
Appl. Phys. Lett. 89, 101904 (2006)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
61.
2006

Jung Jae Hun; Kim Jae Ho; Kim Tae Whan; Yoon Chong Seung; Kim Young-Ho; Jin Sungho

Nonvolatile memory cell effect in multilayered Ni1-x;Fex self-assembled nanoparticle arrays in polyimide
Appl. Phys. Lett. 89, 022112 (2006)
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
62.
2006

Shin J. W.; Lee J. Y.; No Y. S.; Kim T. W.; Choi W. K.

Effects of thermal treatment on the formation of the columnar structures in ZnO thin films grown on p-Si (100) substrates
J. Appl. Phys. 100, 013526 (2006)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
63.
2006

Lee H. S.; Kwon M. S.; Kim T. W.; Kim Y. H.; Lee K. H.; Lee J. Y.; Sohn H. S.; Park H. L.

Coexistence of a phase separation and an ordered structure in CdxZn1-x;Te epilayers grown on GaAs (001); substrates
J. Appl. Phys. 99, 093512 (2006)
Department of Materials Science and Metallurgy, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Korea
64.
2006

Lee H. S.; Park H. L.; Kim T. W.

Characteristics of CdTe/;ZnTe quantum dots grown on GaAs (100) and Si (100) substrates
Appl. Phys. Lett. 88, 181914 (2006)
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
65.
2006

Jung J. H.; Jin J. Y.; Lee I.; Kim T. W.; Roh H. G.; Kim Y.-H.

Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer
Appl. Phys. Lett. 88, 112107 (2006)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea
66.
2006

Shin J. W.; Lee J. Y.; Kim T. W.; No Y. S.; Cho W. J.; Choi W. K.

Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates
Appl. Phys. Lett. 88, 091911 (2006)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
67.
2006

Kim T. W.; Lee H. S.; Park H. L.

Formation and activation energy of CdxZn1-x;Te nanostructures with different dimensions grown on ZnTe buffer layers
Appl. Phys. Lett. 88, 043111 (2006)
Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
68.
2006

Zhang Peng-Xiang; Zhu Shao-Jiang; Liu Xiang; Peng Ju-Bo; Kim Tae Whan; Habermeier H.-U.

Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La;0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates
Jpn. J. Appl. Phys., Part 1 45, 727 (2006)
Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming, Yunnan 650051, China
69.
2006

Kim Tae Whan; Jeon Hee Chang; Kang Tae Won; Lee Ho Seong; Lee Jeong Yong; Jin Sungho

Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates
Appl. Phys. Lett. 88, 021915 (2006)
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
70.
2005

Shin Hong Jae; Kwack Kae Dal; Kim Tae Whan

Novel Low-Power DC–DC Converter Using High-Efficiency Charge Pump Circuits for Flat Panel Displays
Jpn. J. Appl. Phys., Part 1 44, 8427 (2005)
Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
71.
2005

Woo J. T.; Kim J. H.; Kim T. W.; Song J. D.; Park Y. J.

Optical and electronic properties in (In0.53Ga0.47As)1-z;/(;In0.52Al0.48As)z digital alloys
Phys. Rev. B 72, 205320 (2005)
Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
72.
2005

Jeon H. C.; Kang T. W.; Kim T. W.; Kang Joongoo; Chang K. J.

Enhancement of the magnetic properties in (Ga1-x;Mnx)N thin films due to Mn-delta doping
Appl. Phys. Lett. 87, 092501 (2005)
Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
73.
2005

Lee H. S.; Yi S.; Kim T. W.; Lee D. U.; Jeon H. C.; Kang T. W.; Lee K. H.; Lee J. Y.

Existence and atomic arrangement of microtwins in hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates with monolayer InAs Buffers
Appl. Phys. Lett. 87, 071907 (2005)
Department of Materials Science and Metallurgy, Kyungpook National University, 1370 Sangyeokdong, Buk-gu, Daegu 702-701, Korea
74.
2005

Kwack Ho-Sang; Cho Yong-Hoon; Kim G. H.; Park M. R.; Youn D. H.; Bae S. B.; Lee K.-S.; Lee Jae-Hoon; Lee Jung-Hee; Kim T. W.; Kang T. W.; Wang Kang L.

Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/;GaN single heterostructures
Appl. Phys. Lett. 87, 041909 (2005)
Department of Physics and Institute for Basic Science Research, Chungbuk National University, Cheongju 361-763, Korea
75.
2005

Lee H. S.; Lee K. H.; Park H. L.; Kim T. W.; Kim Y.-H.

Effect of thermal annealing on the interband transitions and activation energies of CdTe/;ZnTe quantum dots
J. Appl. Phys. 98, 023702 (2005)
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
76.
2005

Kim T. W.; Lee Jae-Hoon; Cho Y. H.; Jung M. H.; Yoo K. H.; Choo D. C.; Lee Jung-Hee

Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-x;N/;GaN heterostructures
J. Appl. Phys. 97, 103721 (2005)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
77.
2005

Panin G. N.; Park Y. S.; Kang T. W.; Kim T. W.; Wang K. L.; Bao M.

Microstructural and optical properties of self-organized GaN quantum-dot assemblies
J. Appl. Phys. 97, 043527 (2005)
Quantum-Functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
78.
2005

Kim J. H.; Jin J. Y.; Jung J. H.; Lee I.; Kim T. W.; Lim Sung K.; Yoon C. S.; Kim Y.-H.

Formation and electrical properties of Ni1-x;Fex nanocrystals embedded in a polyimide layers for applications as nonvolatile flash memories
Appl. Phys. Lett. 86, 032904 (2005)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, Seoul, 133-791, Korea
79.
2005

Kwon Man Gu; Kim Jae Ho; Kim Tae Whan; Kwack Kae Dal

Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
Jpn. J. Appl. Phys., Part 2 44, L723 (2005)
Department of Nanostructure Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
80.
2005

Yu Sang Ho; Choi Sung Wook; Shin Hong Jae; Kwack Kae Dal; Kim Tae Whan

Enhanced Pixel-Driving Circuits for Active-Matrix Organic-Light-Emitting Diode Displays with Large Sizes
Jpn. J. Appl. Phys., Part 2 44, L439 (2005)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
81.
2005

Kim T. W.; Kim J. H.; Lee H. S.; Lee J. Y.; Kim M. D.

Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures
Appl. Phys. Lett. 86, 021916 (2005)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
82.
2004

Kim T. W.; Lee D. U.; Lee H. S.; Lee J. Y.; Lee Jae-Hoon; Lee Jung-Hee

Microstructural properties and atomic arrangements in GaN/sapphire and AlxGa1-x;N/;AlN/;GaN/;sapphire heterostructures
J. Appl. Phys. 96, 7118 (2004)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
83.
2004

Lee H. S.; Park H. L.; Kim T. W.

Dimensional structural transition in CdTe/;CdxZn1-x;Te nanostructures
Appl. Phys. Lett. 85, 5598 (2004)
Department of Physics, Yonsei University, Seoul 120-749, Korea
84.
2004

Kim Jong Su; Jeon Pyung Eun; Park Yun Hyung; Choi Jun Chul; Park Hong Lee; Kim Gwang Chul; Kim Tae Whan

White-light generation through ultraviolet-emitting diode and white-emitting phosphor
Appl. Phys. Lett. 85, 3696 (2004)
Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749, Korea
85.
2004

Kang Hyun Shik; Lee Hae Ik; Kim Tae Whan

Optical Properties of Terahertz Wave Emitter Fabricated by Using CdxZn1-xTe Single Crystals
Jpn. J. Appl. Phys., Part 2 43, L1256 (2004)
Department of Physics Education, Chonbuk National University, Chonbuk 561-756, Korea
86.
2004

Kwon Y. H.; Kim T. W.; Kang T. W.; Jeon H. C.; Fu D. J.; Lee W. C.; Shon Y.; Fan X. J.

Optical and magnetic properties of Mn⁺-implanted neutron-transmutation-doped GaAs bulks
J. Appl. Phys. 96, 2029 (2004)
Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;
87.
2004

Kang H. S.; Lee H. I.; Kim T. W.

Electrical and optical properties of CdxZn1-x;Te single crystals for applications as terahertz electro-optic sensors
J. Appl. Phys. 96, 1409 (2004)
Department of Physics Education, Chonbuk National University, Chonbuk 561-756, Korea
88.
2004

Lee H. S.; Lee J. Y.; Kim T. W.; Lee I.; Park H. L.

Existence of the CuPt-type ordering due to the surface undulation in CdxZn1-x;Te epilayers grown on ZnTe buffer layers
J. Appl. Phys. 95, 6054 (2004)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-ku, Daejeon 305-701, Korea;
89.
2004

Kim Jong Su; Kang Ji Young; Jeon Pyung Eun; Choi Jin Chul; Park Hong Lee; Kim Tae Whan

GaN‐Based White‐Light‐Emitting Diodes Fabricated with a Mixture of Ba;3MgSi2O8;Eu2+; and Sr2SiO4;Eu2+; Phosphors
Jpn. J. Appl. Phys., Part 1 43, 989 (2004)
Institute of Physics and Applied Physics, Yonsei University, Seoul 120‐749, Korea;
90.
2004

Kim T. W.; Lee E. H.; Lee K. H.; Kim J. S.; Park H. L.

Formation and optical properties of CdTe self-assembled quantum rings with electronic states embedded in ZnTe barriers
Appl. Phys. Lett. 84, 595 (2004)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;
91.
2004

Jeon Hee Chang; Chung Kwang Jae; Chung Kwang Jo; Kang Tae Won; Kim Tae Whan

Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga1-xMnx)As Quantum Wires
Jpn. J. Appl. Phys., Part 2 43, L963 (2004)
Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Korea
92.
2003

Lee E. H.; Lee K. H.; Kim J. S.; Park H. L.; Kim T. W.

Formation and optical properties of CdTe self-assembled pyramids with quantum states grown on ZnTe buffer layers
Appl. Phys. Lett. 83, 5536 (2003)
Department of Physics, Yonsei University, Seoul 120-749, Korea;
93.
2003

Choo D. C.; Meining C. J.; Yoo K. H.; Kim T. W.; McCombe B. D.

Strain effects, electronic parameters, and electronic structures in modulation-doped InxGa1-x;As/InyAl1-y;As coupled step-rectangular quantum wells
J. Appl. Phys. 94, 7621 (2003)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;
94.
2003

Kim Doo Soo; Lee Sejoon; Min Cheonki; Kim Hwa-Mok; Yuldashev Sh. U.; Kang Tae Won; Kim Deuk Young; Kim Tae Whan

Formation and Characterization of (Zn;1-;xMnx)O Diluted Magnetic Semiconductors Grown on (0001) Al;2O3 Substrates
Jpn. J. Appl. Phys., Part 1 42, 7217 (2003)
Quantum‐functional Semiconductor Research Center, Dongguk University, 3‐26 Pil‐dong, Chung‐gu, Seoul 100‐715, Korea;
95.
2003

Lee Sejoon; Shim Young Suk; Cho Hoon Young; Kim Deuk Young; Kim Tae Whan; Wang Kang L.

Optical and Electrical Properties of Si Nanocrystals Embedded in SiO2 Layers
Jpn. J. Appl. Phys., Part 1 42, 7180 (2003)
Quantum‐functional Semiconductor Research Center, Dongguk University, 3‐26 Pil‐dong, Chung‐gu, Seoul 100‐715, Korea;
96.
2003

Kim T. W.; Lee E. H.; Lee K. H.; Kim J. S.; Park H. L.

Formation and electron activation energy of self-assembled CdTe quantum wires grown on ZnTe buffer layers
Appl. Phys. Lett. 83, 4235 (2003)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;
97.
2003

Lee H. S.; Lee J. Y.; Kim T. W.; Kim M. D.

Effect of thermal annealing on the microstructural and optical properties of vertically stacked InAs/GaAs quantum dots embedded in modulation-doped heterostructures
J. Appl. Phys. 94, 6354 (2003)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea;
98.
2003

Ryu Y. S.; Heo Y. B.; Song B. S.; Yoon S. J.; Kim Y. J.; Kang T. W.; Kim T. W.

Optical and electrical properties of in situ-annealed p-type Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers for applications as infrared detectors
Appl. Phys. Lett. 83, 3776 (2003)
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;
99.
2003

Lee Sejoon; Kim Deuk Young; Kim Tae Whan

Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p‐Si Substrates
Jpn. J. Appl. Phys., Part 1 42, 6323 (2003)
Department of Semiconductor Science, Dongguk University, 3‐26 Pildong, Chungku, Seoul 100‐715, Korea;
100.
2003

Lee H. S.; Lee J. Y.; Kim T. W.; Kim M. D.

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots
Appl. Phys. Lett. 83, 2256 (2003)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea;
101.
2003

Oh S. H.; Choi J. C.; Park H. L.; Kim T. W.

Post-delay-time dependences of the formation of CdTe/ZnTe nanostructures and their activation energies
J. Appl. Phys. 94, 2612 (2003)
Department of Physics, Yonsei University, Seoul 120-749, Korea;
102.
2003

Lee H. S.; Lee J. Y.; Kim T. W.; Park H. L.

Domain of CuPtB-type and CuAu–I-type ordered structures in highly strained ;CdxZn1-x;Te/ZnTe heterostructures
Appl. Phys. Lett. 83, 896 (2003)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea;
103.
2003

Kim T. W.; Kwack K. D.; Park J. G.; Lee H. S.; Lee J. Y.; Jang M. S.; Park H. L.

Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-x;Te epilayers
Appl. Phys. Lett. 83, 269 (2003)
Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Scoul 133-791, Korea;
104.
2003

Kim J. S.; Kang H. I.; Kim W. N.; Kim J. I.; Choi J. C.; Park H. L.; Kim G. C.; Kim T. W.; Hwang Y. H.; Mho S. I.; Jung M.-C.; Han M.

Color variation of ZnGa2O4 phosphor by reduction-oxidation processes
Appl. Phys. Lett. 82, 2029 (2003)
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, South Korea;
105.
2003

Ryu Y. S.; Song B. S.; Kim H. J.; Kang T. W.; Kim T. W.

Improvement in the crystallinity and electrical properties in Hg1-;xCdxTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two‐step annealing process
J. Mater. Res. 18, 257 (2003)
Department of Physics, Dongguk University, 3‐26, Pildong, Chungku, Seoul 100‐715, Korea;
106.
2003

Kim M. D.; Noh S. K.; Hong S. C.; Kim T. W.

Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature
Appl. Phys. Lett. 82, 553 (2003)
Quantum Dot Technology Laboratory, Material Evaluation Center, Korea Research Institute Standards and Science, P.O. Box 102, Yusung-Gu, Daejeon 305-600, Korea;
107.
2003

Kim Kwang Moo; Park Young Ju; Roh Cheong Hyun; Park Young Min; Kim Eun Kyu; Hyon Chan Kyeong; Park Jung Ho; Kim Tae Whan

Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles
Jpn. J. Appl. Phys., Part 1 42, 54 (2003)
Semiconductor Materials Laboratory, Nano‐device Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130‐650, Korea;
108.
2002

Jeon Hee Chang; Kang Tae Won; Kim Tae Whan

Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates
Jpn. J. Appl. Phys., Part 2 41, L1452 (2002)
Department of Physics, Dongguk University, 3‐26 Pil‐dong, Chung‐ku, Seoul 100‐715, Korea;
109.
2002

Lee H. S.; Lee K. H.; Choi J. C.; Park H. L.; Kim T. W.; Choo D. C.

Enhancement of the activation energy in coupled CdTe/ZnTe quantum dots and quantum-well structures with a ZnTe thin separation barrier
Appl. Phys. Lett. 81, 3750 (2002)
Department of Physics, Yonsei University, Seoul 120-749, Korea;
110.
2002

Lee H. S.; Lee J. Y.; Kim T. W.; Choo D. C.; Park H. L.

Coexistence of the Cu3Au type ordered structure and the fine modulation in CdxZn1-x;Te epilayers grown on GaAs substrates
Appl. Phys. Lett. 81, 3200 (2002)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-ku, Daejeon 305-701, Korea;
111.
2002

Ryu Young Sun; Song Bong Seok; Kang Tae Won; Kim Hyun Jeong; Kim Tae Whan

Formation of p‐Type Hg;0.7Cd0.3Te Epilayers Grown on CdTe Buffer Layers on GaAs (211) B due to ;In Situ Thermal Annealing
Jpn. J. Appl. Phys., Part 2 41, L1046 (2002)
Department of Physics, Dongguk University, 3‐26 Pildong, Chungku, Seoul 100‐715, Korea;
112.
2002

Jang M. S.; Oh S. H.; Lee H. S.; Choi J. C.; Park H. L.; Kim T. W.; Choo D. C.; Lee D. U.

Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers
Appl. Phys. Lett. 81, 993 (2002)
Department of Physics, Yonsei University, Seoul 120-749, Korea;
113.
2002

Kim T. W.; Choo D. C.; Lee D. U.; Lee H. S.; Jang M. S.; Park H. L.

Coalescence and electron activation energy in CdTe/ZnTe nanostructures
Appl. Phys. Lett. 81, 487 (2002)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
114.
2002

Yang S. J.; Kang T. W.; Kim T. W.; Chung K. S.

Dependence of the Au/Ni/Si/Ni contact properties on the Si‐layer thickness and the annealing temperature in ;p‐type GaN epilayers
J. Mater. Res. 17, 1019 (2002)
Department of Physics, Dongguk University, 3‐26, Pildong, Chungku, Seoul 100‐715, Korea;
115.
2002

Jung Woon Hyung; Kang Tae Won; Kim Tae Whan

Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n‐Type GaN Epilayers Grown on Sapphire Substrates
Jpn. J. Appl. Phys., Part 2 41, L509 (2002)
Quantum‐Functional Semiconductor Research Center, Dongguk University, 3‐26 Pildong, Chungku, Seoul 100‐715, Korea;
116.
2002

Lee H. S.; Lee J. Y.; Kim T. W.; Lee D. U.; Choo D. C.; Kim M. D.

Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces
J. Appl. Phys. 91, 5657 (2002)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Gusung-dong, Yusung-,u, Daejon 305-701, Korea
117.
2002

Lee H. S.; Lee J. Y.; Kim T. W.; Lee D. U.; Choo D. C.; Jung M.; Kim M. D.

Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-x;As/GaAs heterostructures
J. Appl. Phys. 91, 5195 (2002)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Gusung-dong, Yusung-ku, Daejon 305-701, Korea
118.
2002

Kim T. W.; Lee D. U.; Choo D. C.; Jung M.; Yoo K. H.; Comanescu G.; McCombe B. D.

Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells
J. Appl. Phys. 91, 5089 (2002)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
119.
2002

Kim T. W.; Yoo K. H.; Kang S. O.; Hyun J. W.; Oh H. J.; Choo D. C.; Lee D. U.; Yoon Y. S.

Microstructural and electronic properties of Ni thin films grown on p-InP (100) substrates
J. Appl. Phys. 91, 4238 (2002)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
120.
2002

Kim T. W.; Choo D. C.; Shim J. H.; Kang S. O.

Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam
Appl. Phys. Lett. 80, 2168 (2002)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
121.
2001

Lee Hae Gwon; Paek Mun Cheol; Hong Sung Ui; Kang Tae Won; Kim Tae Whan

Crystallization of 3C‐SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing
Jpn. J. Appl. Phys., Part 1 40, 6304 (2001)
Quantum‐functional Semiconductor Research Center and Department of Physics, Dongguk University, 3‐26, Pildong, Chungku, Seoul 100‐715, Korea;
122.
2001

Lee H. S.; Lee J. Y.; Kim T. W.; Lee D. U.; Choo D. C.; Park H. L.

Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities
J. Appl. Phys. 90, 4027 (2001)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Gusung-dong, Yusung-ku, Daejon 305-701, Korea
123.
2001

Kim T. W.; Lee D. U.; Choo D. C.; Yoon Y. S.

Microstructural and optical properties of SnO2 thin films grown on heavily doped n-InP(100) substrates
Appl. Phys. Lett. 79, 2187 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
124.
2001

Lee H. S.; Lee J. Y.; Kim T. W.; Lee D. U.; Choo D. C.; Park H. L.

Coexistence behavior of the CuPtB-type and the CuAu–I-type ordered structures in highly strained ;CdxZn1-x;Te/GaAs heterostructures
Appl. Phys. Lett. 79, 1637 (2001)
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Gusung-dong, Yusung-ku, Daejon 305-701, Korea;
125.
2001

Lee H. Y.; Kang T. W.; Kim T. W.

Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals
J. Mater. Res. 16, 2196 (2001)
Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;
126.
2001

Kim T. W.; Lee D. U.; Choo D. C.; Kim H. J.; Lee H. S.; Lee J. Y.; Kim M. D.

Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures
Appl. Phys. Lett. 79, 33 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
127.
2001

Kim T. W.; Choo D. C.; Shim J. H.; Jung M.; Kang S. O.; Lee H. S.; Lee J. Y.

Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process
Appl. Phys. Lett. 79, 120 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
128.
2001

Kim T. W.; Lee D. U.; Lee J. H.; Choo D. C.; Jung M.; Yoon Y. S.

Structural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on p-InSb (111) substrates
J. Appl. Phys. 90, 175 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
129.
2001

Lee Hae Gwon; Jeon Hee Chang; Kang Tae Won; Kim Tae Whan

Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy
Appl. Phys. Lett. 78, 3319 (2001)
Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;
130.
2001

Kim Hyo Jin; Park Young Ju; Park Young Min; Kim Eun Kyu; Kim Tae Whan

Fabrication of wirelike InAs quantum dots on 2°-off GaAs (100) substrates by changing the thickness of the InAs layer
Appl. Phys. Lett. 78, 3253 (2001)
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea;
131.
2001

Kim Tae Whan; Kim Jin Young; Yoo Keon-Ho; Jeong Hyeon Don; Kim Moon Deock; Jung Min; Kim Jae Ho; Choo Dong Chul; Lee Dea Uk; Lim Han-Jo

1.55 μm Wavelength Strain-Compensated In;xGa1-;xAs/InyAl1-;yAs Electroabsorption Modulators with High Extinction Ratio and Low Polarization-Dependent Loss
Jpn. J. Appl. Phys., Part 1 40, 3120 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
132.
2001

Kim Hyo Jin; Park Young Ju; Min Byung Don; Hyon Chan Kyeong; Park Se Ki; Kim Eun Kyu; Kim Tae Whan

Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
Jpn. J. Appl. Phys., Part 1 40, 2146 (2001)
Department of Physics, Kwangwoon University, 447-1, Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
133.
2001

Kim T. W.; Lee D. U.; Lee H. S.; Lee J. Y.; Park H. L.

Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface
Appl. Phys. Lett. 78, 1409 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
134.
2001

Kim T. W.; Lee D. U.; Choo D. C.; Jung M.; Yoo K. H.; Song M. S.; Yeo T.; Comanescu G.; McCombe B. D.; Kim M. D.

Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer
J. Appl. Phys. 89, 2649 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
135.
2001

Kim T. W.; Lee D. U.; Lee J. Y.; Lee H. S.; Kim M. D.

Existence of a CuAu–I-type ordered structure in lattice-mismatched ;InxGa1-x;As/InyAl1-y;As multiple quantum wells
J. Appl. Phys. 89, 2503 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
136.
2001

Kim T. W.; Lee D. U.; Choo D. C.; Lee H. S.; Lee J. Y.; Park H. L.

Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-x;Te epilayers grown on GaAs substrates
Appl. Phys. Lett. 78, 922 (2001)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
137.
2000

Kang T. W.; Park S. H.; Kim T. W.

Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method
J. Mater. Res. 15, 2602 (2000)
Department of Physics, Dongguk University, Seoul 100-715, Korea;
138.
2000

Jung Woon Hyung; Kang Tae Won; Kim Tae Whan; Chung Kwan Soo

Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere
Jpn. J. Appl. Phys., Part 2 39, L1084 (2000)
Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Korea
139.
2000

Yuldashev Shavkat U.; Kang Tae Won; Jung Woon Hyung; Kwak My Young; Kim Nam Hwa; Ryu Young Sun; Kim Duek Young; Kim Tae Whan; Chung Kwan Soo

Annealing Effect on Passivated Deep Levels in GaN Epilayers
Jpn. J. Appl. Phys., Part 1 39, 5044 (2000)
Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26, Pil-dong, Chung-ku, Seoul 100-715, Korea
140.
2000

Kim T. W.; Lee D. U.; Yoon Y. S.

Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices
J. Appl. Phys. 88, 3759 (2000)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
141.
2000

Kang C. K.; Lee H. I.; Woo Y. D.; Yuldashev Sh. U.; Leem J. H.; Ryu Y. S.; Hyun J. K.; Jung H. S.; Kim H. J.; Kang T. W.; Kim T. W.

Surface passivation by sulfur treatment of undoped p-CdTe(100)
J. Appl. Phys. 88, 2013 (2000)
Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
142.
2000

Kang T. W.; Yuldashev Sh. U.; Bolotin I. L.; Park S. H.; Kim D. Y.; Won S. H.; Jung K. S.; Kim T. W.

Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates
J. Appl. Phys. 88, 790 (2000)
Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;
143.
2000

Han M. S.; Kang T. W.; Kim T. W.

Optical properties and annealing effects on the deep levels in As-doped CdTe/Cd0.96Zn0.04Te(211)B heterostructures
J. Mater. Res. 15, 642 (2000)
Department of Physics, Dongguk University, Seoul 100-715, Korea;
144.
2000

Kang Tae Won; Park Seung Ho; Sun Chi Chang; Kim Tae Whan

Effects of thermal annealing on the Au/Ni and the Au/Ni/Si/Ni contact properties of p-type GaN epilayers
Jpn. J. Appl. Phys., Part 1 39, 1062 (2000)
Department of Physics, Dongguk University, 26, Pildong, Chungku, Seoul 100-715, Korea;
145.
2000

Kim T. W.; Kang S. O.; Choo D. C.; Shim J. H.

Room-temperature observation of the Coulomb blockade effects in Al two-terminal diodes fabricated using a focused ion-beam nanoparticle process
Appl. Phys. Lett. 76, 1036 (2000)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
146.
2000

Kang Tae Won; Yuldashev Shavkat U.; Kim Duek Young; Kim Tae Whan

Effects of hydrogenation and annealing on the deep levels in GaN epilayers grown on sapphire substrates
Jpn. J. Appl. Phys., Part 2 39, L25 (2000)
Department of Physics, Dongguk University 3-26, Pildong, Chungku, Seoul 100-715, Korea;
147.
2000

Kim T. W.; Yoon Y. S.

Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature
J. Mater. Res. 15, 199 (2000)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
148.
1999

Kim Hyo Jin; Park Young K.; Kim Seong-Il; Kim Eun Kyu; Kim Tae Whan

Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate
Jpn. J. Appl. Phys., Part 1 38, 4969 (1999)
Department of Physics, Kwangwoon University, 447-1, Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
149.
1999

Yuldashev Sh. U.; Bolotin I. L.; Hou Y. B.; Leem J. H.; Jeon H. C.; Kang T. W.; Kim T. W.

Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates
J. Appl. Phys. 86, 859 (1999)
Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;
150.
1999

Han M. S.; Kang T. W.; Kim T. W.

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures
J. Mater. Res. 14, 2778 (1999)
Department of Physics, Dongguk University, Seoul 100-715, Korea;
151.
1999

Kim T. W.; Bae H. C.; Park H. L.

Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature
Appl. Phys. Lett. 74, 380 (1999)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
152.
1998

Kim M. D.; Park H. S.; Kim T. W.

Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates
J. Appl. Phys. 84, 3125 (1998)
Photonics Semiconductor Lab, Samsung Advanced Institute of Technology, Suwon 440-600, Korea;
153.
1998

Kim T. W.; Lee K. H.; Park H. L.

Enhancement of the interband Stark effects in strained CdxZn1-x;Te/ZnTe coupled double quantum wells
Appl. Phys. Lett. 73, 1550 (1998)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
154.
1998

Kang T. W.; Park S. H.; Song H.; Yoon G. S.; Kim T. W.; Kim C. O.

Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates
J. Appl. Phys. 84, 2082 (1998)
Department of Physics, Dongguk University, Seoul 100-715, Korea;
155.
1998

Kim C. O.; Park J. S.; Kim T. W.

The effect of molding pressure on the structural and electrical properties of Y1Ba2Cu3O7-δ; superconductors
J. Mater. Res. 13, 2067 (1998)
Department of Physics, Hanyang University, Seoul 133-791, Korea;
156.
1998

Kang T. W.; Park S. H.; Cho H. D.; Kwak M. Y.; Eom G. S.; Kim T. W.

Hydrogenation and annealing effects on GaN epilayers grown on sapphire substrates
Jpn. J. Appl. Phys., Part 1 37, 4417 (1998)
Department of Physics, Dongguk University, Seoul 100-715, Korea;
157.
1998

Kim T. W.; Jung M.; Lee D. U.; Lim Y. S.; Lee J. Y.

Strain effects in lattice-mismatched InxGa1-x;As/InyAl1-y;As coupled double quantum wells
Appl. Phys. Lett. 73, 61 (1998)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
158.
1998

Kim T. W.; Lee K. H.; Park H. L.

Interband transition studies on CdxZn1-x;Te/ZnTe step quantum wells under applied electric fields
Appl. Phys. Lett. 72, 563 (1998)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea;
159.
1998

Kim M. D.; Kang T. W.; Kim T. W.

Hydrogenation and annealing behaviors of deep levels in strained CdTe(111)/GaAs(100) heterostructures
J. Appl. Phys. 83, 349 (1998)
Photonics Semiconductor Laboratory, Materials and Devices Research Center, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
160.
1997

Han M. S.; Kim K. J.; Kang T. W.; Leem J. H.; Lee M. H.; Kim T. W.

Strain effects in CdTe/Si heterostructures
J. Appl. Phys. 82, 6012 (1997)
Department of Physics, Dongguk University, Seoul 100-715, Korea
161.
1997

Kim T. W.; Jung M.; Lee D. U.; Kim J. H.; Yoo K. H.; Lee J. Y.; Ryu S. Y.

Magnetotransport, magneto-optical, and electronic subband studies in InxGa1-x;As/InyAl1-x;As modulation-doped strained double quantum wells
J. Appl. Phys. 82, 4388 (1997)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
162.
1997

Kim T. W.; Kim D. S.; Park H. L.

Excitonic transition and electronic subband studies in CdxZn1-x;Te/ZnTe asymmetric step quantum wells
J. Appl. Phys. 82, 1494 (1997)
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
163.
1996

Kim T. W.; Jung M.; Lee D. U.; Yoo Keon-Ho; Yoo Kyung-Hwa

Magnetotransport, magneto‐optical, and electronic subband studies in In;xGa1-;xAs/In0.52Al0.48As one‐side‐modulation‐doped asymmetric step quantum wells
Appl. Phys. Lett. 69, 1752 (1996)
Department of Physics and Research Institute of Basic Science, Kwangwoon University, Nowon‐ku, Seoul 139‐701, Korea;
164.
1996

Kim T. W.; Yoon Y. S.; Lee J. Y.

Structural properties of Pt/p ‐InP heterostructures
Appl. Phys. Lett. 69, 972 (1996)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
165.
1996

Yoo K.-H.; Lee J. J.; Lee H. K.; Choi J. B.; Park J. W.; Kim T. W.

Width dependence of quantum lifetimes in GaAs/AlxGa1-;xAs heterostructures
Phys. Rev. B 53, 16551 (1996)
Korea Research Institute of Standards and Science, Yusung, P.O. Box 102, Taejon 305‐600, Korea;
166.
1995

Kim T. W.; Park H. L.; Lee J. Y.

The effect of a ZnTe buffer layer on the structural and optical properties of the CdTe/ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor‐transport deposition
Appl. Phys. Lett. 67, 2388 (1995)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
167.
1995

Lee J. H.; Park H. L.; Kim T. W.

Interband transitions in Cd0.07Zn0.93Te/ZnTe strained single quantum wells grown by double‐well temperature‐gradient vapor deposition
Appl. Phys. Lett. 67, 2344 (1995)
Department of Physics, Yonsei University, Seoul 120‐749, Korea;
168.
1995

Oh Y. T.; Kang T. W.; Kim T. W.

Photoluminescence and photoreflectance from GaAs/AlAs multiple quantum wells
J. Appl. Phys. 78, 3376 (1995)
Department of Physics, Dongguk University, 3‐26 Pil‐dong, Chung‐ku, Seoul 100‐715, Korea;
169.
1995

Kim T. W.; Jung M.; Park H. L.; Lee S. D.

Transition behavior from coupled to uncoupled CdTe/ZnTe asymmetric double quantum wells
Phys. Rev. B 52, 1467 (1995)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
170.
1995

Lee J. H.; Lee S. D.; Park H. L.; Kim T. W.

Interband transitions in CdTe/ZnTe single quantum wells grown by temperature‐gradient vapor deposition
Appl. Phys. Lett. 66, 3194 (1995)
Department of Physics, Yonsei University, Seoul 120‐749, Korea;
171.
1995

Kim S. J.; Oh Y. T.; Kim S. K.; Kang T. W.; Kim T. W.

Stark effect and Stark‐ladder effect in Al;0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells
J. Appl. Phys. 77, 2486 (1995)
Department of Physics, Dongguk University, 3‐26 Pil‐dong, Chung‐ku, Seoul 100‐715, Korea;
172.
1995

Oh Y. T.; Kim S. K.; Kim Y. H.; Kang T. W.; Hong C. Y.; Kim T. W.

Carbon impurity effects in Al‐Ga interdiffused GaAs/AlAs multiple quantum wells
J. Appl. Phys. 77, 2415 (1995)
Department of Physics, Dongguk University, 3‐26 Pil‐dong, Chung‐ku, Seoul 100‐715, Korea;
173.
1995

Kim T. W.; Jung M.; Park T. H.; Yoo Keon-Ho; Yoo Kyung-Hwa; Ihm G.

Electronic subband studies in In0.52Al0.48As/InxGa1-;xAs one‐side‐modulation‐doped asymmetric coupled double quantum wells
Appl. Phys. Lett. 66, 508 (1995)
Department of Physics, Kwangwoon University, 441‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
174.
1994

Kim T. W.; Park H. L.; Lee J. Y.; Lee H. J.

Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition
Appl. Phys. Lett. 65, 2597 (1994)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
175.
1994

Kim T. W.; Yom S. S.

Structural and electrical properties of BaTiO3 grown on p‐InP (100) by low‐pressure metalorganic chemical vapor deposition at low temperature
Appl. Phys. Lett. 65, 1955 (1994)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
176.
1994

Kim T. W.; Yoo K-H.; Lee K-S.; Kim Y.; Min S-K.; Yom S. S.; Lee S. J.

Magnetotransport and electron subband studies of edge delta‐doped Al;0.27Ga0.73As/GaAs single quantum wells
J. Appl. Phys. 76, 2863 (1994)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
177.
1994

Oh Y. T.; Byun S. C.; Lee B. R.; Kang T. W.; Hong C. Y.; Park S. B.; Lee H. K.; Kim T. W.

Diminution of the surface states on GaAs by a sulfur treatment
J. Appl. Phys. 76, 1959 (1994)
Department of Physics, Dongguk University, 3‐26 Pil‐dong, Chung‐ku, Seoul 100‐715, Korea;
178.
1994

Lee J. H.; Shin C. S.; Park H. L.; Jang K. S.; Kim T. W.

Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition
J. Appl. Phys. 75, 8216 (1994)
Department of Physics, Yonsei University, Seoul 120‐749, Korea;
179.
1994

Kim T. W.; Yoon Y. S.; Yom S. S.; Lee Jeong Yong

Structural properties and interfacial layer formation mechanisms of PbTiO3 thin films grown on p‐Si substrates
Appl. Phys. Lett. 64, 2676 (1994)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐710, Korea;
180.
1994

Kim T. W.; Park H. L.; Lee J. Y.

Interfacial stages of the ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition at low temperature
Appl. Phys. Lett. 64, 2526 (1994)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
181.
1994

Kim T. W.; Jung M.; Kim H. J.; Park T. H.; Yoon Y. S.; Kang W. N.; Yom S. S.; Na H. K.

Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p‐Si by metalorganic chemical vapor deposition at low temperature
Appl. Phys. Lett. 64, 1407 (1994)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong Nowon‐ku, Seoul 139‐701, Korea;
182.
1993

Kim D. Y.; Kang T. W.; Leem J. Y.; Kim T. W.

Photoluminescence of GaAs epitaxial layers on Si with growth assisted by electron‐beam irradiation
J. Appl. Phys. 74, 4268 (1993)
Department of Physics, Dongguk University, Seoul 100‐715, Korea;
183.
1993

Yoon Y. S.; Kang W. N.; Yom S. S.; Kim T. W.; Jung M.; Kim H. J.; Park T. H.; Na H. K.

Electrical and optical properties of PbTiO3 thin films on p‐Si grown by metalorganic chemical vapor deposition at low temperature
Appl. Phys. Lett. 63, 1104 (1993)
Applied Physics Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul, Korea
184.
1993

Kim T. W.; Kang W. N.; Yoon Y. S.; Yom S. S.; Lee J. Y.; Kim Chayeon; Lim H.; Park H. L.

The interfacial layer formation of the Al2O3/Si structures grown by low‐pressure metalorganic chemical vapor deposition
J. Appl. Phys. 74, 760 (1993)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐Ku, Seoul 139‐701, Korea;
185.
1993

Kim M. D.; Kang T. W.; Kim J. M.; Kim H. K.; Jeoung Y. T.; Kim T. W.

Defect band behavior in p‐Cd;0.96Zn0.04Te by hydrogen passivation
J. Appl. Phys. 73, 4077 (1993)
Department of Physics, Dongguk University, Seoul 100‐715, Korea;
186.
1993

Kim M. D.; Kang T. W.; Kim G. H.; Han M. S.; Cho H. D.; Kim J. M.; Jeoung Y. T.; Kim T. W.

Dependence of the optical properties of p‐CdTe and ;p‐Cd;0.96Zn0.04Te on the bromine concentration in a bromine‐methanol etching solution
J. Appl. Phys. 73, 4074 (1993)
Department of Physics, Dongguk University, Seoul 100‐765, Korea;
187.
1993

Kim T. W.; Jung M.; Kim H. J.; Yoon Y. S.; Kang W. N.; Yom S. S.

Structural and electrical properties of BaTiO3 thin films grown on p‐InSb substrate by metalorganic chemical vapor deposition at low temperature
Appl. Phys. Lett. 62, 1788 (1993)
Department of Physics, Kwangwoon University, 447‐1, Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
188.
1993

Yoon Y. S.; Kang W. N.; Shin H. S.; Yom S. S.; Kim T. W.; Lee Jong Yong; Choi D. J.; Baek S-S.

Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition
J. Appl. Phys. 73, 1547 (1993)
Applied Physics Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul, Korea
189.
1992

Ihm G.; Falk M. L.; Noh S. K.; Lee S. J.; Kim T. W.

Quantum wire in a longitudinal magnetic field: Effect of quantum confinement on magnetization
Phys. Rev. B 46, 15270 (1992)
Vacuum Science Laboratory, Korea Research Institute of Standards Science, P.O. Box 3, Taedok Science Town, Taejon 305‐606, Korea;
190.
1992

Kim T. W.; Jung M.; Park H. L.; Na H. K.; Kim J. S.

Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition
Appl. Phys. Lett. 61, 1101 (1992)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea;
191.
1992

Lee Y. H.; Kang T. W.; Hong C. Y.; Kim T. W.

Computer simulation of Si‐implanted GaAs (001) single crystals
J. Appl. Phys. 72, 229 (1992)
Department of Physics, Dongguk University, 3‐26 Pil‐dong, Chung‐ku, Seoul 100‐715, Korea;
192.
1992

Lee Y. H.; Kang T. W.; Kim T. W.

Thermally stimulated current of Si‐ion‐implanted GaAs
J. Appl. Phys. 71, 5419 (1992)
Department of Physics, Dongguk University, Seoul 100‐715, Korea;
193.
1992

Kim T. W.; Koo B. J.; Jung M.; Kim S. B.; Park H. L.; Lim H.; Lee J. I.; Kang K. N.

Growth of CdTe epitaxial films on p‐InSb(111) by temperature gradient vapor transport deposition
J. Appl. Phys. 71, 1049 (1992)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐050, Korea;
194.
1991

Kim T. W.; Lee J. I.; Kang K. N.; Lee K-S.; Yoo K-H.

Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers
Phys. Rev. B 44, 12891 (1991)
Department of Physics, Kwangwoon University, 447‐1 Wolgye‐Dong, Nowon‐Ku, Seoul 139‐050, Korea;
195.
1991

Ihm G.; Noh S. K.; Lee J. I.; Hwang J.-S.; Kim T. W.

Modulation of superlattice band structure via δ doping
Phys. Rev. B 44, 6266 (1991)
Quantum Physics Laboratory, Korea Standards Research Institute, Taejon 305‐606, Korea;
196.
1991

Kang T. W.; Tong C.; Eom G. S.; Leem J. Y.; Kim T. W.

Thermally stimulated current of Li+ ion‐implanted amorphous selenium
J. Appl. Phys. 69, 3119 (1991)
Department of Physics, Dongguk University, 3‐26 Chungku Pildong, Seoul 100‐715, Korea;
197.
1991

Kang T. W.; Tong C.; Leem J. Y.; Kim T. W.

Thermally stimulated current of amorphous selenium
J. Appl. Phys. 69, 3115 (1991)
Department of Physics, Dongguk University, 3‐26 Chungku Pildong, Seoul 100‐715, Korea;

Co-authors

Co-publications
49

Kang, Tae Won
46

Park, Hong Lee
43

Lee, Jeong Yong
36

Lee, Ho Seong
24

Lee, D U
23

Jung, Jae Hun
22

Choo, DC
16

Jung, Myung-Ho
11

Li, Fushan
11

Choi, Won Kook
11

Jeon, Hee Chang
11

Yoon, Young Soo
10

Yoo, KH
10

Son, Dong Ick
8

No, YS