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Electron states and collectiv...
III-V semiconductor-to-semico...
Coulomb blockade; single-elec...
Quantum dots
Tunneling
Molecular, atomic, ion, and c...
Lithography, masks and patter...
Galvanomagnetic and other mag...
III-V semiconductors
Field effect devices
Acoustoelectric and magnetoac...
Ballistic transport
Quantum wires
III-V and II-VI semiconductors
Acoustical properties
Spin polarized transport in s...
1.
Schwagmann Andre; Kalliakos Sokratis; Farrer Ian; Griffiths Jonathan P.; Jones Geb A. C.; Ritchie David A.; Shields Andrew J.
On-chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide
2.
Smith L. W.; Thomas K. J.; Pepper M.; Hew W. K.; Farrer I.; Anderson D.; Jones G. A. C.; Ritchie D. A.
Interactions in a coupled row of electrons formed in a quasi‐one‐dimensional quantum wire
3.
Pedrós J.; García-Gancedo L.; Ford C. J. B.; Barnes C. H. W.; Griffiths J. P.; Jones G. A. C.; Flewitt A. J.
Guided propagation of surface acoustic waves and piezoelectric field enhancement in ZnO/GaAs systems
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4.
Chorley S. J.; Giavaras G.; Wabnig J.; Jones G. A. C.; Smith C. G.; Briggs G. A. D.; Buitelaar M. R.
Transport Spectroscopy of an Impurity Spin in a Carbon Nanotube Double Quantum Dot
5.
Wright S. J.; Thorn A. L.; Blumenthal M. D.; Giblin S. P.; Pepper M.; Janssen T. J. B. M.; Kataoka M.; Fletcher J. D.; Jones G. A. C.; Nicoll C. A.; Gumbs Godfrey; Ritchie D. A.
Single- and few-electron dynamic quantum dots in a perpendicular magnetic field
6.
Puddy R. K.; Scard P. H.; Tyndall D.; Connolly M. R.; Smith C. G.; Jones G. A. C.; Lombardo A.; Ferrari A. C.; Buitelaar M. R.
Atomic force microscope nanolithography of graphene: Cuts, pseudocuts, and tip current measurements
7.
Kataoka M.; Fletcher J. D.; See P.; Giblin S. P.; Janssen T. J. B. M.; Griffiths J. P.; Jones G. A. C.; Farrer I.; Ritchie D. A.
Tunable Nonadiabatic Excitation in a Single-Electron Quantum Dot
8.
Connolly M. R.; Chiu K. L.; Lombardo A.; Fasoli A.; Ferrari A. C.; Anderson D.; Jones G. A. C.; Smith C. G.
Tilted potential induced coupling of localized states in a graphene nanoconstriction
9.
Crook R.; Schneble R. J.; Kataoka M.; Beere H. E.; Ritchie D. A.; Anderson D.; Jones G. A. C.; Smith C. G.; Ford C. J. B.; Barnes C. H. W.
Scanned gate microscopy of surface-acoustic-wave-induced current through a depleted one-dimensional GaAs channel
10.
Mansell R.; Laloë J.-B.; Holmes S. N.; Wong P. K. J.; Xu Y. B.; Farrer I.; Jones G. A. C.; Ritchie D. A.; Barnes C. H. W.
Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces
11.
Connolly M. R.; Chiou K. L.; Smith C. G.; Anderson D.; Jones G. A. C.; Lombardo A.; Fasoli A.; Ferrari A. C.
Scanning gate microscopy of current-annealed single layer graphene
12.
Dewhurst S. J.; Granados D.; Ellis D. J. P.; Bennett A. J.; Patel R. B.; Farrer I.; Anderson D.; Jones G. A. C.; Ritchie D. A.; Shields A. J.
Slow-light-enhanced single quantum dot emission in a unidirectional photonic crystal waveguide
13.
Saifullah M. S. M.; Khan M. Z. R.; Hasko David G.; Leong Eunice S. P.; Neo Xue L.; Goh Eunice T. L.; Anderson David; Jones Geraint A. C.; Welland Mark E.
Spin-coatable HfO2 resist for optical and electron beam lithographies
14.
Jones G. A. C.; Xiong G.; Anderson D.
Fabrication of nanoscale ZnO field effect transistors using the functional precursor zinc neodecanoate directly as a negative electron beam lithography resist
15.
Lee J. H.; Holmes S. N.; Hong B.; Roy P. E.; Mascaro M. D.; Hayward T. J.; Anderson D.; Cooper K.; Jones G. A. C.; Vickers M. E.; Ross C. A.; Barnes C. H. W.
Magnetic remanent states and quasistatic switching behavior of Fe split-rings for spin field-effect-transistor applications
16.
Córcoles A.; Beere H. E.; Jones G. A. C.; Pepper M.; Ford C. J. B.; Ritchie D. A.
Nuclear spin coherence in a quantum wire
17.
Wright S. J.; Blumenthal M. D.; Pepper M.; Anderson D.; Jones G. A. C.; Nicoll C. A.; Ritchie D. A.
Parallel quantized charge pumping
18.
Meng T.-J.; Laloë J.-B.; Husmann A.; Holmes S. N.; Jones G. A. C.
In-plane magnetoresistance and magnetization reversal of cobalt antidot arrays
19.
Smith L. W.; Hew W. K.; Thomas K. J.; Pepper M.; Farrer I.; Anderson D.; Jones G. A. C.; Ritchie D. A.
Row coupling in an interacting quasi-one-dimensional quantum wire investigated using transport measurements
20.
Petersson K. D.; Jones G. A. C.; Atkinson P.; Anderson D.; Smith C. G.; Ritchie D. A.
Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits
21.
Sarkozy S.; Das Gupta K.; Siegert C.; Ghosh A.; Pepper M.; Farrer I.; Beere H. E.; Ritchie D. A.; Jones G. A. C.
Low temperature transport in undoped mesoscopic structures
22.
Kataoka M.; Astley M. R.; Thorn A. L.; Oi D. K. L.; Barnes C. H. W.; Ford C. J. B.; Anderson D.; Jones G. A. C.; Farrer I.; Ritchie D. A.; Pepper M.
Coherent Time Evolution of a Single-Electron Wave Function
23.
Sarkozy S.; Sfigakis F.; Das Gupta K.; Farrer I.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Zero-bias anomaly in quantum wires
24.
Prance J. R.; Smith C. G.; Griffiths J. P.; Chorley S. J.; Anderson D.; Jones G. A. C.; Farrer I.; Ritchie D. A.
Electronic Refrigeration of a Two-Dimensional Electron Gas
25.
Lee J. H.; Hayward T. J.; Holmes S. N.; Hong B.; Llandro J.; Cooper K.; Anderson D.; Jones G. A. C.; Barnes C. H. W.
Influence of thermal excitation on magnetization states and switching routes of magnetic multilayer rings
26.
Hew W. K.; Thomas K. J.; Pepper M.; Farrer I.; Anderson D.; Jones G. A. C.; Ritchie D. A.
Incipient Formation of an Electron Lattice in a Weakly Confined Quantum Wire
27.
Roy P. E.; Lee J. H.; Trypiniotis T.; Anderson D.; Jones G. A. C.; Tse D.; Barnes C. H. W.
Antivortex domain walls observed in permalloy rings via magnetic force microscopy
28.
Tse D. H. Y.; Steinmuller S. J.; Trypiniotis T.; Anderson D.; Jones G. A. C.; Bland J. A. C.; Barnes C. H. W.
Static and dynamic magnetic properties of Ni80Fe20 square antidot arrays
29.
Yang Q.-Z.; Kelly M. J.; Farrer I.; Beere H. E.; Jones G. A. C.
The potential of split-gate transistors as one-dimensional electron waveguides revealed through the testing and analysis of yield and reproducibility
30.
Wright S. J.; Nicoll C. A.; Jones G. A. C.; Anderson D.; Holmes S. N.; Janssen T. J. B. M.; Pepper M.; Thorn A. L.; Gumbs Godfrey; Blumenthal M. D.; Ritchie D. A.
Enhanced current quantization in high-frequency electron pumps in a perpendicular magnetic field
31.
Cantone A. L.; Buitelaar M. R.; Smith C. G.; Anderson D.; Jones G. A. C.; Chorley S. J.; Casiraghi C.; Lombardo A.; Ferrari A. C.; Shinohara H.; Ardavan A.; Warner J.; Watt A. A. R.; Porfyrakis K.; Briggs G. A. D.
Electronic transport characterization of Sc@C82 single-wall carbon nanotube peapods
32.
Buitelaar M. R.; Kashcheyevs V.; Leek P. J.; Talyanskii V. I.; Smith C. G.; Anderson D.; Jones G. A. C.; Wei J.; Cobden D. H.
Adiabatic Charge Pumping in Carbon Nanotube Quantum Dots
33.
Gated-charge force microscopy for imaging a surface-acoustic-wave-induced charge in a depleted one-dimensional channel
34.
Gell J. R.; Ward M. B.; Young R. J.; Stevenson R. M.; Atkinson P.; Anderson D.; Jones G. A. C.; Ritchie D. A.; Shields A. J.
Modulation of single quantum dot energy levels by a surface-acoustic-wave
35.
Siegert Christoph; Ghosh Arindam; Pepper Michael; Farrer Ian; Ritchie David A.; Anderson David; Jones Geb A. C.
Oscillatory Hall effect in high-mobility two-dimensional electron gases
36.
Siegert C.; Ghosh A.; Pepper M.; Farrer I.; Ritchie D. A.; Anderson D.; Jones G. A. C.
Effect of a perpendicular magnetic field on the zero-bias anomaly in two-dimensional electron systems
37.
Spin-Incoherent Transport in Quantum Wires
38.
Buitelaar M. R.; Fransson J.; Cantone A. L.; Smith C. G.; Anderson D.; Jones G. A. C.; Ardavan A.; Khlobystov A. N.; Watt A. A. R.; Porfyrakis K.; Briggs G. A. D.
Pauli spin blockade in carbon nanotube double quantum dots
39.
Hickey M. C.; Damsgaard C. D.; Holmes S. N.; Farrer I.; Jones G. A. C.; Ritchie D. A.; Jacobsen C. S.; Hansen J. B.; Pepper M.
Spin injection from Co2MnGa into an InGaAs quantum well
40.
Astley M. R.; Kataoka M.; Ford C. J. B.; Barnes C. H. W.; Godfrey M. D.; Farrer I.; Ritchie D. A.; Anderson D.; Jones G. A. C.; Pepper M.; Holmes S. N.
Quantized acoustoelectric current in an InGaAs quantum well
41.
Simmonds P. J.; Sfigakis F.; Beere H. E.; Ritchie D. A.; Pepper M.; Anderson D.; Jones G. A. C.
Quantum transport in In0.75Ga0.25As quantum wires
42.
Astley M. R.; Kataoka M.; Ford C. J. B.; Barnes C. H. W.; Anderson D.; Jones G. A. C.; Farrer I.; Ritchie D. A.; Pepper M.
Energy-Dependent Tunneling from Few-Electron Dynamic Quantum Dots
43.
Perez-Martinez F.; Farrer I.; Anderson D.; Jones G. A. C.; Ritchie D. A.; Chorley S. J.; Smith C. G.
Demonstration of a quantum cellular automata cell in a GaAs/;AlGaAs heterostructure
44.
Gell J. R.; Ward M. B.; Shields A. J.; Atkinson P.; Bremner S. P.; Anderson D.; Kataoka M.; Barnes C. H. W.; Jones G. A. C.; Ritchie D. A.
Temporal characteristics of surface-acoustic-wave-driven luminescence from a lateral p-n junction
45.
Hickey M. C.; Holmes S. N.; Meng T.; Farrer I.; Jones G. A. C.; Ritchie D. A.; Pepper M.
Strongly bias-dependent spin injection from Fe into n-type GaAs
46.
Kishen K.; Graham A. C.; Pepper M.; Farrer I.; Ritchie D. A.; Jones G. A. C.
Momentum effects on focusing in one‐dimensional systems
47.
Hohls F.; Pepper M.; Griffiths J. P.; Jones G. A. C.; Ritchie D. A.
Assessing energy relaxation in 2d with ballistic electron spectroscopy
48.
Schneble R. J.; Kataoka M.; Ford C. J. B.; Barnes C. H. W.; Anderson D.; Jones G. A. C.; Farrer I.; Ritchie D. A.; Pepper M.
Collapse of nonequilibrium charge states in an isolated quantum dot using surface acoustic waves
49.
Kataoka M.; Ritchie D. A.; Farrer I.; Jones G. A. C.; Anderson D.; Ford C. J. B.; Barnes C. H. W.; Thorn A. L.; Schneble R. J.; Pepper M.
Single-Electron Population and Depopulation of an Isolated Quantum Dot Using a Surface-Acoustic-Wave Pulse
50.
Gell J. R.; Atkinson P.; Bremner S. P.; Sfigakis F.; Kataoka M.; Anderson D.; Jones G. A. C.; Barnes C. H. W.; Ritchie D. A.; Ward M. B.; Norman C. E.; Shields A. J.
Surface-acoustic-wave-driven luminescence from a lateral p-n junction
51.
Ballistic electron spectroscopy
52.
Astley M. R.; Kataoka M.; Ford C. J. B.; Barnes C. H. W.; Anderson D.; Jones G. A. C.; Farrer I.; Beere H. E.; Ritchie D. A.; Pepper M.
Examination of multiply reflected surface acoustic waves by observing acoustoelectric current generation under pulse modulation
53.
Astley M. R.; Kataoka M.; Schneble R. J.; Ford C. J. B.; Barnes C. H. W.; Anderson D.; Jones G. A. C.; Beere H. E.; Ritchie D. A.; Pepper M.
Examination of surface acoustic wave reflections by observing acoustoelectric current generation under pulse modulation
54.
Quantum-dot thermometry of electron heating by surface acoustic waves
55.
Kataoka M.; Ford C. J. B.; Barnes C. H. W.; Anderson D.; Jones G. A. C.; Beere H. E.; Ritchie D. A.; Pepper M.
The effect of pulse-modulated surface acoustic waves on acoustoelectric current quantization
56.
Atkinson P.; Jones G. A. C.; Anderson D.; Bremner S. P.; Ritchie D. A.
Size evolution of site-controlled InAs quantum dots grown by molecular beam epitaxy on prepatterned GaAs substrates
57.
Saifullah M. S. M.; Subramanian K. R. V.; Anderson D.; Kang Dae-Joon; Huck W. T. S.; Jones G. A. C.; Welland M. E.
Sub-10-nm high aspect ratio patterning of ZnO in a 500 μ;m main field
58.
Gevaux D. G.; Bennett A. J.; Stevenson R. M.; Shields A. J.; Atkinson P.; Griffiths J.; Anderson D.; Jones G. A. C.; Ritchie D. A.
Enhancement and suppression of spontaneous emission by temperature tuning InAs quantum dots to photonic crystal cavities
59.
Rushforth A. W.; Smith C. G.; Farrer I.; Ritchie D. A.; Jones G. A. C.; Anderson D.; Pepper M.
Fano effect and Kondo effect in quantum dots formed in strongly coupled quantum wells
60.
Leek P. J.; Buitelaar M. R.; Talyanskii V. I.; Smith C. G.; Anderson D.; Jones G. A. C.; Wei J.; Cobden D. H.
Charge Pumping in Carbon Nanotubes
61.
Hickey M. C.; Ritchie D. A.; Lee R. F.; Jones G. A. C.; Damsgaard C. D.; Farrer I.; Holmes S. N.; Husmann A.; Hansen J. B.; Jacobsen C. S.; Pepper M.
Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well
62.
Hosey T.; Talyanskii V.; Vijendran S.; Jones G. A. C.; Ward M. B.; Unitt D. C.; Norman C. E.; Shields A. J.
Lateral n–p; junction for acoustoelectric nanocircuits
63.
Nemutudi R.; Ritchie D. A.; Pepper M.; Appleyard N. J.; Ford C. J. B.; Kataoka M.; Jones G. A. C.
Noninvasive lateral detection of Coulomb blockade in a quantum dot fabricated using atomic force microscopy
64.
Nemutudi R.; Ritchie D. A.; Pepper M.; Appleyard N. J.; Ford C. J. B.; Smith C. G.; Jones G. A. C.
Quantum dot with independently tunable tunneling barriers fabricated using an atomic force microscope
65.
Vijendran S.; See P.; Ahmed A.; Jones G. A. C.; Beere H. E.; Norman C. E.
Focused ion beam patterned Hall bars and Ohmic columns embedded in molecular-beam-epitaxial-grown GaAs/AlGaAs
66.
Curson N. J.; Nemutudi R.; Appleyard N. J.; Pepper M.; Ritchie D. A.; Jones G. A. C.
Ballistic transport in a GaAs/AlxGa1-x;As one-dimensional channel fabricated using an atomic force microscope
67.
Kaminsky W. M.; Jones G. A. C.; Patel N. K.; Booij W. E.; Blamire M. G.; Gardiner S. M.; Xu Y. B.; Bland J. A. C.
Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation
68.
McLaughlin R.; Chen Q.; Corchia A.; Ciesla C. M.; Arnone D. D.; Zhang X. C.; Jones G. A. C.; Linfield E. H.; Pepper M.
Enhanced coherent terahertz emission from indium arsenide
69.
McLaughlin R.; Corchia A.; Johnston M. B.; Chen Q.; Ciesla C. M.; Arnone D. D.; Jones G. A. C.; Linfield E. H.; Davies A. G.; Pepper M.
Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field
70.
Vijendran S.; Sazio P. J. A.; Beere H. E.; Jones G. A. C.; Ritchie D. A.; Norman C. E.
Independently contacted electron–hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth
71.
Harrell R. H.; Pyshkin K. S.; Simmons M. Y.; Ritchie D. A.; Ford C. J. B.; Jones G. A. C.; Pepper M.
Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures
72.
Brown S. J.; Rose P. D.; Jones G. A. C.; Linfield E. H.; Ritchie D. A.
Electrically active defect centers induced by Ga+ focused ion beam irradiation of GaAs(100)
73.
See P.; Linfield E. H.; Arnone D. D.; Rose P. D.; Ritchie D. A.; Jones G. A. C.
In situGa+ focused ion beam definition of high current density resonant tunneling diodes
74.
Jones G. A. C.; Rose P. D.; Brown S.
In situ scanning tunneling microscope studies of high-energy, focused ion implantation of Ga into GaAs: Direct observation of ion beam profiles
75.
Talyanskii V. I.; Shilton J. M.; Pepper M.; Smith C. G.; Ford C. J. B.; Linfield E. H.; Ritchie D. A.; Jones G. A. C.
Single-electron transport in a one-dimensional channel by high-frequency surface acoustic waves
76.
Sazio P. J. A.; Jones G. A. C.; Linfield E. H.; Ritchie D. A.
Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth
77.
Millard I. S.; Patel N. K.; Foden C. L.; Simmons M. Y.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Observation of magnetic breakdown in coupled double quantum wells
78.
Dzurak A. S.; Ritchie D. A.; Liang C. T.; Martı´n-Moreno L.; Pepper M.; Barnes C. H. W.; Smith C. G.; Jones G. A. C.
Thermoelectric signature of the excitation spectrum of a quantum dot
79.
Hill N. P. R.; Nicholls J. T.; Linfield E. H.; Pepper M.; Ritchie D. A.; Jones G. A. C.; Hu Ben Yu-Kuang; Flensberg Karsten
Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well
80.
Kardynał B.; Barnes C. H. W.; Linfield E. H.; Ritchie D. A.; Nicholls J. T.; Brown K. M.; Jones G. A. C.; Pepper M.
Magnetotunneling spectroscopy of one-dimensional wires
81.
Sazio P. J. A.; Thompson J. H.; Jones G. A. C.; Linfield E. H.; Ritchie D. A.; Houlton M.; Smith G. W.
Use of very low energy insitu focused ion beams for three‐dimensional dopant patterning during molecular beam epitaxial growth
82.
Turner N.; Nicholls J. T.; Linfield E. H.; Brown K. M.; Jones G. A. C.; Ritchie D. A.
Tunneling between parallel two‐dimensional electron gases
83.
Brown S. J.; Grimshaw M. P.; Ritchie D. A.; Jones G. A. C.
Variation of surface morphology with substrate temperature for molecular beam epitaxially grown GaSb(100) on GaAs(100)
84.
Field M.; Smith C. G.; Pepper M.; Brown K. M.; Linfield E. H.; Grimshaw M. P.; Ritchie D. A.; Jones G. A. C.
Coulomb Blockade as a Noninvasive Probe of Local Density of States
85.
Patel N. K.; Millard I. S.; Linfield E. H.; Rose P. D.; Grimshaw M. P.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Exchange‐ and correlation‐induced charge transfer observed in independently contacted triple‐quantum‐well structures
86.
Millard I. S.; Patel N. K.; Simmons M. Y.; Linfield E. H.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Compressibility studies of double electron and double hole gas systems
87.
Kardynal̸ B.; Barnes C. H. W.; Linfield E. H.; Ritchie D. A.; Brown K. M.; Jones G. A. C.; Pepper M.
Direct measurement of the band structure of a one‐dimensional surface superlattice
88.
Kardynal̸ B.; Linfield E. H.; Ritchie D. A.; Brown K. M.; Barnes C. H. W.; Jones G. A. C.; Pepper M.
Equilibrium tunneling between two‐dimensional and quasi‐one‐dimensional electron gases in devices fabricated by ;insitu focused ion beam lithography
89.
Savchenko A. K.; Kuznetsov V. V.; Woolfe A.; Mace D. R.; Pepper M.; Ritchie D. A.; Jones G. A. C.
Resonant tunneling through two impurities in disordered barriers
90.
Paul D. J.; Law V. J.; Jones G. A. C.
Si1-;xGex pulsed plasma etching using CHF3 and H2
91.
Hamilton A. R.; Jones G. A. C.; Ritchie D. A.; Kelly M. J.; Linfield E. H.; Pepper M.
Transition from one‐ to two‐subband occupancy in the 2DEG of back‐gated modulation‐doped GaAs‐Al;xGa1-;xAs heterostructures
92.
Arnone D. D.; Frost J. E. F.; Smith C. G.; Ritchie D. A.; Jones G. A. C.; Butcher R. J.; Pepper M.
Effect of terahertz irradiation on ballistic transport through one‐dimensional quantum point contacts
93.
Davies A. G.; Mitchell E. E.; Clark R. G.; Simmonds P. E.; Ritchie D. A.; Simmons M. Y.; Pepper M.; Jones G. A. C.
Magneto‐optical probe of the two‐dimensional hole‐system low‐temperature ground states
94.
Patel N. K.; Grimshaw M. P.; Burroughes J. H.; Leadbeater M. L.; Ritchie D. A.; Jones G. A. C.
Independently contacted double quantum well structure fabricated by molecular beam epitaxial regrowth
95.
Churchill A. C.; Ritchie D. A.; Simmons M. Y.; Kim G. H.; Jones G. A. C.
Electron focusing in two‐dimensional electron gases grown on (311);B GaAs substrates
96.
Brown K. M.; Turner N.; Nicholls J. T.; Linfield E. H.; Pepper M.; Ritchie D. A.; Jones G. A. C.
Tunneling between two‐dimensional electron gases in a strong magnetic field
97.
Ó Súilleabháin L. C.; Ritchie D. A.; Grimshaw M. P.; Churchill A. C.; Bangert D.; Hughes H. P.; Jones G. A. C.
Raman studies of intrasubband plasmons in laterally modulated two‐dimensional electron gases
98.
Law V. J.; Braithwaite N. St. J.; Ingram S. G.; Clary D. C.; Jones G. A. C.
Investigation of modulated radio frequency plasma etching of GaAs using Langmuir probes
99.
Evans R. J.; Grimshaw M. P.; Burroughes J. H.; Leadbeater M. L.; Tribble M. J.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Double two‐dimensional electron gas structure formed by molecular beam epitaxy regrowth on an ;ex situ patterned n+‐GaAs back gate
100.
Kurobe A.; Castleton I. M.; Linfield E. H.; Grimshaw M. P.; Brown K. M.; Ritchie D. A.; Pepper M.; Jones G. A. C.
Resonant resistance enhancement in double‐quantum‐well GaAs‐Al;xGa1-;xAs heterostructures
101.
Wave functions and Fermi surfaces of strongly coupled two‐dimensional electron gases investigated by in‐plane magnetoresistance
102.
Patel N. K.; Burroughes J. H.; Tribble M. J.; Linfield E. H.; Churchill A. C.; Ritchie D. A.; Jones G. A. C.
Independent contacting to electron layers in a double quantum well system using Pd‐Ge shallow ohmic contacts
103.
Ó Súilleabháin L. C.; Hughes H. P.; Churchill A. C.; Ritchie D. A.; Grimshaw M. P.; Jones G. A. C.
Raman studies of plasmon modes in a drifting two‐dimensional electron gas
104.
Talyanskii V. I.; Simmons M. Y.; Frost J. E. F.; Pepper M.; Ritchie D. A.; Churchill A. C.; Jones G. A. C.
Experimental investigation of the damping of low‐frequency edge magnetoplasmons in GaAs‐Al;xGa1-;xAs heterostructures
105.
Ford C. J. B.; Simpson P. J.; Zailer I.; Mace D. R.; Yosefin M.; Pepper M.; Ritchie D. A.; Grimshaw M. P.; Frost J. E. F.; Jones G. A. C.
Charging and double‐frequency Aharonov‐Bohm effects in an open system
106.
Arnone D. D.; Burroughes J. H.; Pepper M.; Grimshaw M. P.; Ritchie D. A.; Jones G. A. C.
Far‐infrared study of a quasi‐one‐dimensional electron gas formed by molecular beam epitaxial regrowth on patterned GaAs
107.
Patel N. K.; Linfield E. H.; Brown K. M.; Grimshaw M. P.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Large transconductances observed in an independently contacted coupled double quantum well
108.
Frost J. E. F.; Smith C. G.; Ford C. J. B.; Linfield E. H.; Ritchie D. A.; Pepper M.; Liang C.-T.; Castleton I. M.; Jones G. A. C.
One‐dimensional ballistic channel with a triple‐barrier longitudinal potential; Measurement and model
109.
Frost J. E. F.; Berggren K.-F.; Pepper M.; Grimshaw M.; Ritchie D. A.; Churchill A. C.; Jones G. A. C.
Analytical model of a one‐dimensional constriction with many occupied subbands; Calculation and experiment
110.
Brown K. M.; Linfield E. H.; Ritchie D. A.; Jones G. A. C.; Grimshaw M. P.; Pepper M.
Resonant tunneling between parallel, two‐dimensional electron gases; A new approach to device fabrication using ;in situ ion beam lithography and molecular beam epitaxy growth
111.
Liang C.-T.; Smith C. G.; Nicholls J. T.; Hughes R. J. F.; Pepper M.; Frost J. E. F.; Ritchie D. A.; Grimshaw M. P.; Jones G. A. C.
Weak localization and electron‐electron interactions in a two‐dimensional grid lateral surface superlattice
112.
Tewordt M.; Hughes R. J. F.; Martín-Moreno L.; Nicholls J. T.; Asahi H.; Kelly M. J.; Law V. J.; Ritchie D. A.; Frost J. E. F.; Jones G. A. C.; Pepper M.
Vertical tunneling between two quantum dots in a transverse magnetic field
113.
Simmons M. Y.; Ritchie D. A.; Zailer I.; Churchill A. C.; Jones G. A. C.
Optimization of high mobility two‐dimensional hole gases
114.
Brown K. M.; Linfield E. H.; Ritchie D. A.; Jones G. A. C.; Grimshaw M. P.; Churchill A. C.
Fabrication of independent contacts to two closely spaced two‐dimensional electron gases using molecular beam epitaxy regrowth and ;insitu focused ion beam lithography
115.
Grimshaw M. P.; Ritchie D. A.; Burroughs J. H.; Jones G. A. C.
Effect of the proximity of an ex situ; patterned interface on the quality of two‐dimensional electron gases at GaAs/AlGaAs heterojunctions
116.
Burroughes J. H.; Grimshaw M. P.; Leadbeater M. L.; Ritchie D. A.; Pepper M.; Jones G. A. C.
One‐dimensional wire formed by molecular‐beam epitaxial regrowth on a patterned ;pnpnp GaAs substrate
117.
Zailer I.; Nicholls J. T.; Ritchie D. A.; Simmons M. Y.; Pepper M.; Ford C. J. B.; Frost J. E. F.; Jones G. A. C.
Phase coherence, interference, and conductance quantization in a confined two‐dimensional hole gas
118.
Simpson P. J.; Mace D. R.; Ford C. J. B.; Zailer I.; Pepper M.; Ritchie D. A.; Frost J. E. F.; Grimshaw M. P.; Jones G. A. C.
Aharonov–Bohm effect and one‐dimensional ballistic transport through two independent parallel channels
119.
Brown K. M.; Linfield E. H.; Jones G. A. C.; Ritchie D. A.; Thompson J. H.
Fabrication of a novel split‐backgate transistor by ;insitu focused ion‐beam lithography and molecular‐beam epitaxial regrowth
120.
Law V. J.; Tewordt M.; Clary D. C.; Jones G. A. C.
300 kHz pulse plasma etching of GaAs using a mixture of ClCH3 and H2
121.
Chabasseur-Molyneux V.; Frost J. E. F.; Tribble M. J.; Grimshaw M. P.; Ritchie D. A.; Churchill A. C.; Jones G. A. C.; Pepper M.; Burroughes J. H.
Low temperature operation of Ge‐Ag ohmic contacts to a high mobility two dimensional electron gas
122.
Daniels M. E.; Bishop P. J.; Jensen K. O.; Ridley B. K.; Ritchie D. A.; Grimshaw M.; Linfield E. H.; Jones G. A. C.; Smith G. W.
Electron transport across a wide AlGaAs barrier
123.
Burroughes J. H.; Leadbeater M. L.; Grimshaw M. P.; Evans R. J.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs
124.
Thompson J. H.; Jones G. A. C.; Ritchie D. A.; Linfield E. H.; Churchill A. C.; Smith G. W.; Houlton M.; Lee D.; Whitehouse C. R.
Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth
125.
Nicholls J. T.; Grimshaw M. P.; Ritchie D. A.; Pepper M.; Frost J. E. F.; Jones G. A. C.
Charging effects and the excitation spectrum of a quantum dot formed by an impurity potential
126.
Kurobe A.; Frost J. E. F.; Grimshaw M. P.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Wave function deformation and mobility of a two‐dimensional electron gas in a backgated GaAs‐AlGaAs heterostructure
127.
Linfield E. H.; Hamilton A. R.; Iredale N.; Ritchie D. A.; Jones G. A. C.
Transport properties of a two‐dimensional electron gas closely separated from an underlying ;n+ GaAs layer; The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and insitu focused ion beams
128.
Chen Y.; Nicholas R. J.; Sundaram G. M.; Heard P. J.; Prewett P. D.; Frost J. E. F.; Jones G. A. C.; Peacock D. C.; Ritchie D. A.
Low‐field magnetotransport study of localization in a mesoscopic antidot array
129.
Sundaram G. M.; Peacock D. C.; Jones G. A. C.; Frost J. E. F.; Prewett P. D.; Heard P. J.; Rees G. J.; Nicholas R. J.; Bassom N. J.; Ritchie D. A.
Magnetoconductivity in a mesoscopic antidot array
130.
Field M.; Jones G. A. C.; Frost J. E. F.; Ritchie D. A.; Pepper M.; Smith C. G.; Hasko D. G.
Measurements of Coulomb blockade with a noninvasive voltage probe
131.
Oowaki Y.; Ritchie D. A.; Pepper M.; Martin-Moreno L.; Frost J. E. F.; Jones G. A. C.
Enhancement of intersubband transition probability in a one‐dimensional constriction
132.
Driessen F. A. J. M.; Ritchie D. A.; Jones G. A. C.; Frigo D. M.; Giling L. J.; Berendschot T. T. J. M.; Olsthoorn S. M.; Frost J. E. F.
Fermi‐edge‐induced magnetophotoluminescence in high‐carrier‐density single heterojunctions
133.
Talyanskii V. I.; Polisski A. V.; Arnone D. D.; Pepper M.; Smith C. G.; Ritchie D. A.; Frost J. E.; Jones G. A. C.
Spectroscopy of a two‐dimensional electron gas in the quantum‐Hall‐effect regime by use of low‐frequency edge magnetoplasmons
134.
Polisskii A. V.; Talyanskii V. I.; Cole J.; Smith C. G.; Pepper M.; Ritchie D. A.; Frost J. E. F.; Jones G. A. C.
Low‐frequency measurements of cyclotron resonance in a high‐mobility 2D electron gas in GaAs/AlGaAs heterostructures
135.
Smith C. G.; Chen W.; Frost J. E. F.; Ritchie D. A.; Hasko D.; Ahmed H.; Pepper M.; Jones G. A. C.
Fabrication and physics of lateral superlattices with 40 nm pitch on high‐mobility GaAs GaAlAs heterostructures
136.
Jones G. A. C.; Ritchie D. A.; Linfield E. H.; Thompson J. H.; Hamilton A. R.; Brown K.
Ultrahigh vacuum in situ fabrication of three‐dimensional semiconductor structures using a combination of particle beams
137.
Kusters R. M.; Wittekamp F. A.; Singleton J.; Perenboom J. A. A. J.; Jones G. A. C.; Ritchie D. A.; Frost J. E. F.; André J.-P.
Electron relaxation times in high‐carrier‐density GaAs‐(Ga,Al)As heterojunctions
138.
Tewordt M.; Frost J. E. F.; Ritchie D. A.; Pepper M.; Newbury R.; Kelly M. J.; Law V. J.; Martín-Moreno L.; Jones G. A. C.
Resonant tunneling in an AlxGa1-;xAs/GaAs quantum dot as a function of magnetic field
139.
Cobden D. H.; Patel N. K.; Ritchie D. A.; Frost J. E. F.; Pepper M.; Savchenko A.; Jones G. A. C.
Time‐irreversible random telegraph signal due to current along a single hopping chain
140.
Kurobe A.; Frost J. E. F.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor
141.
Tewordt M.; Martín-Moreno L.; Nicholls J. T.; Pepper M.; Kelly M. J.; Law V. J.; Ritchie D. A.; Frost J. E. F.; Jones G. A. C.
Single‐electron tunneling and Coulomb charging effects in aysmmetric double‐barrier resonant‐tunneling diodes
142.
Wilkinson R. J.; Ager C. D.; Duffield T.; Hughes H. P.; Hasko D. G.; Ahmed H.; Frost J. E. F.; Peacock D. C.; Ritchie D. A.; Jones G. A. C.; Whitehouse C. R.; Apsley N.
Plasmon excitation and self‐coupling in a bi‐periodically modulated two‐dimensional electron gas
143.
Hamilton A. R.; Frost J. E. F.; Smith C. G.; Kelly M. J.; Linfield E. H.; Ford C. J. B.; Ritchie D. A.; Jones G. A. C.; Pepper M.; Hasko D. G.; Ahmed H.
Back‐gated split‐gate transistor; A one‐dimensional ballistic channel with variable Fermi energy
144.
Driessen F. A. J. M.; Olsthoorn S. M.; Berendschot T. T. J. M.; Pen H. F.; Giling L. J.; Jones G. A. C.; Ritchie D. A.; Frost J. E. F.
Influence of magnetic fields on an extremely narrow exciton line in a high‐carrier‐density heterojunction
145.
Dzurak A. S.; Ford C. J. B.; Kelly M. J.; Pepper M.; Frost J. E. F.; Ritchie D. A.; Jones G. A. C.; Ahmed H.; Hasko D. G.
Two‐dimensional electron‐gas heating and phonon emission by hot ballistic electrons
146.
Tewordt M.; Asahi H.; Law V. J.; Syme R. T.; Kelly M. J.; Ritchie D. A.; Churchill A.; Frost J. E. F.; Hughes R. H.; Jones G. A. C.
Resonant tunneling in coupled quantum dots
147.
Patel N. K.; Nicholls J. T.; Martn-Moreno L.; Pepper M.; Frost J. E. F.; Ritchie D. A.; Jones G. A. C.
Evolution of half plateaus as a function of electric field in a ballistic quasi‐one‐dimensional constriction
148.
Davies A. G.; Newbury R.; Pepper M.; Frost J. E. F.; Ritchie D. A.; Jones G. A. C.
Fractional quantum Hall effect in high‐mobility two‐dimensional hole gases in tilted magnetic fields
149.
Properties of a ballistic quasi‐one‐dimensional constriction in a parallel high magnetic field
150.
Ingram S. G.; Simpson P. J.; Law V. J.; Ritchie D. A.; Jones G. A. C.
Helium radio‐frequency‐plasma GaAs device isolation; Application to an in‐plane gated quantum wire transistor
151.
Tewordt M.; Ritchie D. A.; Syme R. T.; Kelly M. J.; Law V. J.; Newbury R.; Pepper M.; Frost J. E. F.; Jones G. A. C.; Stobbs W. M.
Electron‐state lifetimes in submicron diameter resonant tunneling diodes
152.
Asahi H.; Tewordt M.; Syme R. T.; Kelly M. J.; Law V. J.; Mace D. R.; Frost J. E. F.; Ritchie D. A.; Jones G. A. C.; Pepper M.
Tunneling between totally quantized levels in GaAs/AlGaAs asymmetric triple‐barrier heterostructures in high magnetic fields
153.
Cobden D. H.; Patel N. K.; Pepper M.; Ritchie D. A.; Frost J. E. F.; Jones G. A. C.
Noise and reproducible structure in a GaAs/AlxGa1-;xAs one‐dimensional channel
154.
Law V. J.; Ingram S. G.; Tewordt M.; Jones G. A. C.
Alkane based plasma etching of GaAs
155.
Matthews P.; Ritchie D. A.; Frost J. E. F.; Peacock D. C.; Ahmed H.; Stobbs W. M.; Pepper M.; Hasko D. G.; Law V. J.; Kelly M. J.; Jones G. A. C.
Electron interactions in the two‐dimensional electron‐gas base of a vertical hot‐electron transistor
156.
Tremblay F.; Jones G. A. C.; Frost J. E. F.; Peacock D. C.; Ritchie D. A.; Newbury R.; Pepper M.; Hill G.
Low‐field magnetotransport in ;p‐type GaAs in the regime of variable‐range‐hopping conductivity
157.
Tremblay F.; Pepper M.; Newbury R.; Ritchie D.; Peacock D. C.; Frost J. E. F.; Jones G. A. C.; Hill G.
Quantum interference in variable range hopping under directional constraints
158.
Law V. J.; Jones G. A. C.; Ritchie D. A.; Peacock D. C.; Frost J. E. F.
Selective metalorganic reactive ion etching of molecular‐beam epitaxy GaAs/Al;xGa1-;xAs
159.
Activationless hopping of correlated electrons in n‐type GaAs
160.
Tremblay F.; Pepper M.; Ritchie D.; Peacock D. C.; Frost J. E. F.; Jones G. A. C.
Negative magnetoresistance in the variable‐range‐hopping regime in ;n‐type GaAs
161.
Wharam D. A.; Ekenberg U.; Pepper M.; Hasko D. G.; Ahmed H.; Frost J. E. F.; Ritchie D. A.; Peacock D. C.; Jones G. A. C.
Empirical relation between gate voltage and electrostatic potential in the one‐dimensional electron gas of a split‐gate device
162.
Maliepaard M. C.; Pepper M.; Newbury R.; Frost J. E. F.; Peacock D. C.; Ritchie D. A.; Jones G. A. C.; Hill G.
Evidence of a magnetic‐field‐induced insulator‐metal‐insulator transition
163.
Ford C. J. B.; Thornton T. J.; Newbury R.; Pepper M.; Ahmed H.; Peacock D. C.; Ritchie D. A.; Frost J. E. F.; Jones G. A. C.
Electrostatically defined heterojunction rings and the Aharonov–Bohm effect
164.
Chen Z. W.; Jones G. A. C.; Ahmed H.
Nanowriter: A new high‐voltage electron beam lithography system for nanometer‐scale fabrication
165.
Vanishing Hall voltage in a quasi‐one‐dimensional GaAs‐Al;xGa1-;xAs heterojunction
166.
Jones G. A. C.; Blythe S.; Ahmed H.
Very high voltage (500 kV) electron beam lithography for thick resists and high resolution
167.
Augur R. A.; Jones G. A. C.; Ahmed H.
Modeling and exposure of three‐dimensional shaped beam profiles in electron resist
168.
Jones G. A. C.; Sargent P. M.; Norris T. S.; Ahmed H.
High‐voltage shaped e‐beam lithography
169.
Jones G. A. C.; Rao V. R. M.; Sun H. T.; Ahmed H.
Optimization of the optical parameters in variable shape electron beam lithography
170.
Dayan P. S.; Jones G. A. C.
Monte Carlo modeling of current distribution in shaped electron beams
135
Ritchie, David A.
95
Pepper, Michael
41
Anderson, David
30
Linfield, Edmund H.
27
Farrer, Ian
26
Smith, Charles G. Gordon
25
Ford, Christopher J. B.
23
Barnes, Crispin H. W.
15
Kataoka, Masaya
13
Law, Victor John
Ahmed, Haroon
11
Beere, Harvey E.
Nicholls, JT
8
Holmes, S.N.
Simmons, Michelle Y.