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Gossard, Arthur C.

Computed

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Research Profile

Latest Publications

1.
2012

Barthel C.; Medford J.; Bluhm H.; Yacoby A.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient
Phys. Rev. B 85, 035306 (2012)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
2.
2012

Preu S.; Kim S.; Verma R.; Burke P. G.; Sherwin M. S.; Gossard A. C.

An improved model for non-resonant terahertz detection in field-effect transistors
J. Appl. Phys. 111, 024502 (2012)
Tanner Research, 825 South Myrtle Avenue, Monrovia, California 91016, USA
3.
2011

Nakamura Shuji; Yamauchi Yoshiaki; Hashisaka Masayuki; Chida Kensaku; Kobayashi Kensuke; Ono Teruo; Leturcq Renaud; Ensslin Klaus; Saito Keiji; Utsumi Yasuhiro; Gossard Arthur C.

Nonequilibrium fluctuation relations in a quantum coherent conductor
AIP Conf. Proc. 1399, 329 (2011)
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611‐0011, Japan

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All Publications

1.
2012

Barthel C.; Medford J.; Bluhm H.; Yacoby A.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient
Phys. Rev. B 85, 035306 (2012)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
2.
2012

Preu S.; Kim S.; Verma R.; Burke P. G.; Sherwin M. S.; Gossard A. C.

An improved model for non-resonant terahertz detection in field-effect transistors
J. Appl. Phys. 111, 024502 (2012)
Tanner Research, 825 South Myrtle Avenue, Monrovia, California 91016, USA
3.
2011

Nakamura Shuji; Yamauchi Yoshiaki; Hashisaka Masayuki; Chida Kensaku; Kobayashi Kensuke; Ono Teruo; Leturcq Renaud; Ensslin Klaus; Saito Keiji; Utsumi Yasuhiro; Gossard Arthur C.

Nonequilibrium fluctuation relations in a quantum coherent conductor
AIP Conf. Proc. 1399, 329 (2011)
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611‐0011, Japan
4.
2011

Dovzhenko Y.; Stehlik J.; Petersson K. D.; Petta J. R.; Lu H.; Gossard A. C.

Nonadiabatic quantum control of a semiconductor charge qubit
Phys. Rev. B 84, 161302 (2011)
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
5.
2011

Zide J. M. O.; Bahk J.-H.; Singh R.; Zebarjadi M.; Zeng G.; Lu H.; Feser J. P.; Xu D.; Singer S. L.; Bian Z. X.; Majumdar A.; Bowers J. E.; Shakouri A.; Gossard A. C.

Erratum: “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials” [J. Appl. Phys. 108, 123702 (2010)]
J. Appl. Phys. 110, 059902 (2011)
Materials Science and Engineering Department, University of Delaware, Newark, Delaware 19716, USA
6.
2011

Sciambi A.; Pelliccione M.; Lilly M. P.; Bank S. R.; Gossard A. C.; Pfeiffer L. N.; West K. W.; Goldhaber-Gordon D.

Vertical field-effect transistor based on wave-function extension
Phys. Rev. B 84, 085301 (2011)
Department of Applied Physics, Stanford University, Stanford, California 94305-4045, USA
7.
2011

Trowbridge Christopher J.; Norman Benjamin M.; Stephens Jason; Gossard Arthur C.; Awschalom David D.; Sih Vanessa

Electron spin polarization-based integrated photonic devices
Opt. Express 19, 14845 (2011)
8.
2011

van Weperen I.; Armstrong B. D.; Laird E. A.; Medford J.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Charge-State Conditional Operation of a Spin Qubit
Phys. Rev. Lett. 107, 030506 (2011)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
9.
2011

Winbow A. G.; Leonard J. R.; Remeika M.; Kuznetsova Y. Y.; High A. A.; Hammack A. T.; Butov L. V.; Wilkes J.; Guenther A. A.; Ivanov A. L.; Hanson M.; Gossard A. C.

Electrostatic Conveyer for Excitons
Phys. Rev. Lett. 106, 196806 (2011)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
10.
2011

Burke Peter G.; Lu Hong; Rudawski Nicholas G.; Gossard Arthur C.; Bahk Je-Hyeong; Bowers John E.

Electrical properties of Er-doped In0.53Ga0.47As
J. Vac. Sci. Technol. B 29, 03C117 (2011)
Materials Department, University of California, Santa Barbara, California 93106
11.
2011

Buschbeck J.; Kawasaki J.; Buehl T. E.; Gossard A. C.; Palmstrøm C. J.

Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation
J. Vac. Sci. Technol. B 29, 03C116 (2011)
Materials Department, University of California, Santa Barbara, California 93106
12.
2011

Buehl Trevor E.; Palmstrøm Christopher J.; Gossard Arthur C.

Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy
J. Vac. Sci. Technol. B 29, 03C108 (2011)
Materials Department, University of California, Santa Barbara, California 93106
13.
2011

Kawasaki Jason K.; Timm Rainer; Buehl Trevor E.; Lundgren Edvin; Mikkelsen Anders; Gossard Arthur C.; Palmstrøm Chris J.

Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs
J. Vac. Sci. Technol. B 29, 03C104 (2011)
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106
14.
2011

Nakamura Shuji; Yamauchi Yoshiaki; Hashisaka Masayuki; Chida Kensaku; Kobayashi Kensuke; Ono Teruo; Leturcq Renaud; Ensslin Klaus; Saito Keiji; Utsumi Yasuhiro; Gossard Arthur C.

Fluctuation theorem and microreversibility in a quantum coherent conductor
Phys. Rev. B 83, 155431 (2011)
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
15.
2011

Preu S.; Döhler G. H.; Malzer S.; Wang L. J.; Gossard A. C.

Tunable, continuous-wave Terahertz photomixer sources and applications
J. Appl. Phys. 109, 061301 (2011)
Max Planck Institute for the Science of Light and University of Erlangen-Nürnberg, D-91058 Erlangen, Germany
16.
2011

Sciambi A.; Pelliccione M.; Bank S. R.; Gossard A. C.; Goldhaber-Gordon D.

Erratum: “Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems” [Appl. Phys. Lett. 97, 132103 (2010)]
Appl. Phys. Lett. 98, 089901 (2011)
Department of Applied Physics, Stanford University, Stanford, California 94305- 4045, USA
17.
2010

Barthel C.; Medford J.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Interlaced Dynamical Decoupling and Coherent Operation of a Singlet-Triplet Qubit
Phys. Rev. Lett. 105, 266808 (2010)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
18.
2010

Zide J. M. O.; Bahk J.-H.; Singh R.; Zebarjadi M.; Zeng G.; Lu H.; Feser J. P.; Xu D.; Singer S. L.; Bian Z. X.; Majumdar A.; Bowers J. E.; Shakouri A.; Gossard A. C.

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials
J. Appl. Phys. 108, 123702 (2010)
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
19.
2010

Petersson K. D.; Petta J. R.; Lu H.; Gossard A. C.

Quantum Coherence in a One-Electron Semiconductor Charge Qubit
Phys. Rev. Lett. 105, 246804 (2010)
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA.
20.
2010

Russell K. J.; Capasso F.; Narayanamurti V.; Lu H.; Zide J. M. O.; Gossard A. C.

Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport
Phys. Rev. B 82, 115322 (2010)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
21.
2010

Norman B. M.; Trowbridge C. J.; Stephens J.; Gossard A. C.; Awschalom D. D.; Sih V.

Mapping spin-orbit splitting in strained (In,Ga)As epilayers
Phys. Rev. B 82, 081304 (2010)
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
22.
2010

Laird E. A.; Taylor J. M.; DiVincenzo D. P.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Coherent spin manipulation in an exchange-only qubit
Phys. Rev. B 82, 075403 (2010)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
23.
2010

Zhao Zhenyu; Schwagmann Andre; Ospald Frank; Driscoll Daniel C.; Lu Hong; Gossard Arthur C.; Smet Jurgen H.

Thickness dependence of the terahertz response in ?110?-oriented GaAs crystals for electro-optic sampling at 1.55 µm
Opt. Express 18, 15956 (2010)
24.
2010

Yi Wei; Narayanamurti Venkatesh; Lu Hong; Scarpulla Michael A.; Gossard Arthur C.

Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/AlxGa1-xAs as a model system
Phys. Rev. B 81, 235325 (2010)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
25.
2010

Bahk Je-Hyeong; Bian Zhixi; Zebarjadi Mona; Zide Joshua M. O.; Lu Hong; Xu Dongyan; Feser Joseph P.; Zeng Gehong; Majumdar Arun; Gossard Arthur C.; Shakouri Ali; Bowers John E.

Thermoelectric figure of merit of (In0.53Ga0.47As)0.8(In0.52Al0.48As)0.2 III-V semiconductor alloys
Phys. Rev. B 81, 235209 (2010)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
26.
2010

Reilly D. J.; Taylor J. M.; Petta J. R.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot
Phys. Rev. Lett. 104, 236802 (2010)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
27.
2010

Kuznetsova Y. Y.; Remeika M.; High A. A.; Hammack A. T.; Butov L. V.; Hanson M.; Gossard A. C.

All-optical excitonic transistor
Opt. Lett. 35, 1587 (2010)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
28.
2010

Barthel C.; Kjærgaard M.; Medford J.; Stopa M.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot
Phys. Rev. B 81, 161308 (2010)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
29.
2010

Schwagmann A.; Zhao Z.-Y.; Ospald F.; Lu H.; Driscoll D. C.; Hanson M. P.; Gossard A. C.; Smet J. H.

Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm
Appl. Phys. Lett. 96, 141108 (2010)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
30.
2010

Yang Sen; Butov L. V.; Levitov L. S.; Simons B. D.; Gossard A. C.

Exciton front propagation in photoexcited GaAs quantum wells
Phys. Rev. B 81, 115320 (2010)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
31.
2010

Nakamura Shuji; Yamauchi Yoshiaki; Hashisaka Masayuki; Chida Kensaku; Kobayashi Kensuke; Ono Teruo; Leturcq Renaud; Ensslin Klaus; Saito Keiji; Utsumi Yasuhiro; Gossard Arthur C.

Nonequilibrium Fluctuation Relations in a Quantum Coherent Conductor
Phys. Rev. Lett. 104, 080602 (2010)
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
32.
2009

Hammack A. T.; Butov L. V.; Wilkes J.; Mouchliadis L.; Muljarov E. A.; Ivanov A. L.; Gossard A. C.

Kinetics of the inner ring in the exciton emission pattern in coupled GaAs quantum wells
Phys. Rev. B 80, 155331 (2009)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
33.
2009

Yi Wei; Narayanamurti Venkatesh; Lu Hong; Scarpulla Michael A.; Gossard Arthur C.; Huang Yong; Ryou Jae-Hyun; Dupuis Russell D.

Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy
Appl. Phys. Lett. 95, 112102 (2009)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
34.
2009

Zeng Gehong; Bahk Je-Hyeong; Bowers John E.; Lu Hong; Gossard Arthur C.; Singer Suzanne L.; Majumdar Arun; Bian Zhixi; Zebarjadi Mona; Shakouri Ali

Thermoelectric power generator module of 16×16Bi2Te3 and 0.6% ErAs:(InGaAs)1-x(InAlAs)x segmented elements
Appl. Phys. Lett. 95, 083503 (2009)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
35.
2009

Lim Jongseok; Lee W.-R.; Sim H.-S.; Averitt R. D.; Zide J. M. O.; Gossard A. C.; Ahn Jaewook

Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells
Phys. Rev. B 80, 035322 (2009)
Department of Physics, KAIST, Daejeon 305-701, Korea
36.
2009

Likovich Edward M.; Russell Kasey J.; Narayanamurti Venkatesh; Lu Hong; Gossard Arthur C.

Direct injection tunnel spectroscopy of a p-n junction
Appl. Phys. Lett. 95, 022106 (2009)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
37.
2009

Studer M.; Salis G.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Gate-Controlled Spin-Orbit Interaction in a Parabolic GaAs/AlGaAs Quantum Well
Phys. Rev. Lett. 103, 027201 (2009)
IBM Research, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
38.
2009

Zebarjadi Mona; Esfarjani Keivan; Shakouri Ali; Bahk Je-Hyeong; Bian Zhixi; Zeng Gehong; Bowers John; Lu Hong; Zide Joshua; Gossard Art

Erratum: “Effect of nanoparticle scattering on thermoelectric power factor” [Appl. Phys. Lett. 94, 202105 (2009)]
Appl. Phys. Lett. 95, 019901 (2009)
Department of Electrical Engineering, University of California, Santa Cruz, California 95064, USA
39.
2009

Azad Abul K.; Chen Hou-Tong; Kasarla Satish R.; Taylor Antoinette J.; Tian Zhen; Lu Xinchao; Zhang Weili; Lu Hong; Gossard Arthur C.; O'Hara John F.

Ultrafast optical control of terahertz surface plasmons in subwavelength hole arrays at room temperature
Appl. Phys. Lett. 95, 011105 (2009)
MPA-CINT, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
40.
2009

Baraskar Ashish K.; Wistey Mark A.; Jain Vibhor; Singisetti Uttam; Burek Greg; Thibeault Brian J.; Lee Yong Ju; Gossard Arthur C.; Rodwell Mark J. W.

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
J. Vac. Sci. Technol. B 27, 2036 (2009)
ECE, University of California, Santa Barbara, California 93106
41.
2009

Gustavsson S.; Leturcq R.; Ihn T.; Ensslin K.; Gossard A. C.

Electrons in quantum dots: One by one
J. Appl. Phys. 105, 122401 (2009)
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
42.
2009

Singh Rajeev; Bian Zhixi; Shakouri Ali; Zeng Gehong; Bahk Je-Hyeong; Bowers John E.; Zide Joshua M. O.; Gossard Arthur C.

Direct measurement of thin-film thermoelectric figure of merit
Appl. Phys. Lett. 94, 212508 (2009)
Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA
43.
2009

Zebarjadi Mona; Esfarjani Keivan; Shakouri Ali; Bahk Je-Hyeong; Bian Zhixi; Zeng Gehong; Bowers John; Lu Hong; Zide Joshua; Gossard Art

Effect of nanoparticle scattering on thermoelectric power factor
Appl. Phys. Lett. 94, 202105 (2009)
Department of Electrical Engineering, University of California, Santa Cruz, California 95064, USA
44.
2009

Yamauchi Y.; Hashisaka M.; Nakamura S.; Chida K.; Kasai S.; Ono T.; Leturcq R.; Ensslin K.; Driscoll D. C.; Gossard A. C.; Kobayashi K.

Universality of bias- and temperature-induced dephasing in ballistic electronic interferometers
Phys. Rev. B 79, 161306 (2009)
Institute for Chemical Research, Kyoto University, Uij, Kyoto 611-0011, Japan
45.
2009

Koh Yee Kan; Singer Suzanne L.; Kim Woochul; Zide Joshua M. O.; Lu Hong; Cahill David G.; Majumdar Arun; Gossard Arthur C.

Comparison of the 3ω; method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors
J. Appl. Phys. 105, 054303 (2009)
Department of Materials Science and Engineering, and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA
46.
2009

Singisetti Uttam; Zimmerman Jeramy D.; Wistey Mark A.; Cagnon Joël; Thibeault Brian J.; Rodwell Mark J. W.; Gossard Arthur C.; Stemmer Susanne; Bank Seth R.

ErAs epitaxial Ohmic contacts to InGaAs/InP
Appl. Phys. Lett. 94, 083505 (2009)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
47.
2009

Gasser U.; Gustavsson S.; Küng B.; Ensslin K.; Ihn T.; Driscoll D. C.; Gossard A. C.

Statistical electron excitation in a double quantum dot induced by two independent quantum point contacts
Phys. Rev. B 79, 035303 (2009)
Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland
48.
2008

Reilly D. J.; Taylor J. M.; Laird E. A.; Petta J. R.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Measurement of Temporal Correlations of the Overhauser Field in a Double Quantum Dot
Phys. Rev. Lett. 101, 236803 (2008)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
49.
2008

Singisetti Uttam; Wistey Mark A.; Zimmerman Jeramy D.; Thibeault Brian J.; Rodwell Mark J. W.; Gossard Arthur C.; Bank Seth R.

Ultralow resistance in situ Ohmic contacts to InGaAs/InP
Appl. Phys. Lett. 93, 183502 (2008)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
50.
2008

Gustavsson S.; Studer M.; Leturcq R.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Detecting single-electron tunneling involving virtual processes in real time
Phys. Rev. B 78, 155309 (2008)
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland;
51.
2008

Azad Abul K.; Prasankumar Rohit P.; Talbayev Diyar; Taylor Antoinette J.; Averitt Richard D.; Zide Joshua M. O.; Lu Hong; Gossard Arthur C.; O'Hara John F.

Carrier dynamics in InGaAs with embedded ErAs nanoislands
Appl. Phys. Lett. 93, 121108 (2008)
MPA-CINT, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
52.
2008

Winbow A. G.; Butov L. V.; Gossard A. C.

Photon storage with subnanosecond readout rise time in coupled quantum wells
J. Appl. Phys. 104, 063515 (2008)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
53.
2008

Chen Hou-Tong; Palit Sabarni; Tyler Talmage; Bingham Christopher M.; Zide Joshua M. O.; O'Hara John F.; Smith David R.; Gossard Arthur C.; Averitt Richard D.; Padilla Willie J.; Jokerst Nan M.; Taylor Antoinette J.

Hybrid metamaterials enable fast electrical modulation of freely propagating terahertz waves
Appl. Phys. Lett. 93, 091117 (2008)
Los Alamos National Laboratory, MPA-CINT, MS K771, Los Alamos, New Mexico 87545, USA
54.
2008

Amasha S.; MacLean K.; Radu Iuliana P.; Zumbühl D. M.; Kastner M. A.; Hanson M. P.; Gossard A. C.

Spin-dependent tunneling of single electrons into an empty quantum dot
Phys. Rev. B 78, 041306 (2008)
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
55.
2008

Fogler M. M.; Butov L. V.; Hammack A. T.; Yang Sen; Gossard A. C.

Effect of spatial resolution on the estimates of the coherence length of excitons in quantum wells
Phys. Rev. B 78, 035411 (2008)
Department of Physics, University of California San Diego, La Jolla, California 92093, USA
56.
2008

Kim Sangwoo; Wu Dong Ho; Zimmerman Jeramy D.; Focardi Paolo; Gossard Arthur C.; Sherwin Mark S.

Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors
Appl. Phys. Lett. 92, 253508 (2008)
Physics Department, University of California, Santa Barbara, California 93106, USA
57.
2008

Preu S.; Malzer S.; Döhler G. H.; Zhao Q. Z.; Hanson M.; Zimmerman J. D.; Gossard A. C.; Wang L. J.

Interference between two coherently driven monochromatic terahertz sources
Appl. Phys. Lett. 92, 221107 (2008)
Max Planck Research Group, Institute for Optics, Information and Photonics, University of Erlangen-Nürnberg, D-91058 Erlangen, ;Germany
58.
2008

Chen Hou-Tong; Lu Hong; Azad Abul K.; Averitt Richard D.; Gossard Arthur C.; Trugman Stuart A.; O'Hara John F.; Taylor Antoinette J.

Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays
Opt. Express 16, 7641 (2008)
59.
2008

Preu S.; Schwefel H. G. L.; Malzer S.; Döhler G. H.; Wang L. J.; Hanson M.; Zimmerman J. D.; Gossard A. C.

Coupled whispering gallery mode resonators in the Terahertz frequency range
Opt. Express 16, 7336 (2008)
60.
2008

Mack S.; Myers R. C.; Heron J. T.; Gossard A. C.; Awschalom D. D.

Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs
Appl. Phys. Lett. 92, 192502 (2008)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
61.
2008

Scarpulla Michael A.; Zide Joshua M. O.; LeBeau James M.; Van de Walle Chris G.; Gossard Arthur C.; Delaney Kris T.

Near-infrared absorption and semimetal-semiconductor transition in 2 ;nm ErAs nanoparticles embedded in GaAs and AlAs
Appl. Phys. Lett. 92, 173116 (2008)
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
62.
2008

Bell L.; Rogers J.; Heyman J. N.; Zimmerman J. D.; Gossard A. C.

Terahertz emission by quantum beating in a modulation doped parabolic quantum well
Appl. Phys. Lett. 92, 142108 (2008)
Department of Physics and Astronomy, Macalester College, Minnesota 55105, USA
63.
2008

Ospald F.; Maryenko D.; von Klitzing K.; Driscoll D. C.; Hanson M. P.; Lu H.; Gossard A. C.; Smet J. H.

1.55 μ;m ultrafast photoconductive switches based on ErAs;InGaAs
Appl. Phys. Lett. 92, 131117 (2008)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, ;Germany
64.
2008

Petta J. R.; Taylor J. M.; Johnson A. C.; Yacoby A.; Lukin M. D.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Dynamic Nuclear Polarization with Single Electron Spins
Phys. Rev. Lett. 100, 067601 (2008)
Department of Physics, Harvard University, 17 Oxford St., Cambridge, Massachusetts 02138, USA
65.
2008

Amasha S.; Hanson M. P.; Kastner M. A.; Zumbühl D. M.; Radu Iuliana P.; MacLean K.; Gossard A. C.

Electrical Control of Spin Relaxation in a Quantum Dot
Phys. Rev. Lett. 100, 046803 (2008)
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
66.
2007

Zeng Gehong; Bahk Je-Hyeong; Bowers John E.; Zide Joshua M. O.; Gossard Arthur C.; Bian Zhixi; Singh Rajeev; Shakouri Ali; Kim Woochul; Singer Suzanne L.; Majumdar Arun

ErAs:(InGaAs)1-x;(InAlAs)x alloy power generator modules
Appl. Phys. Lett. 91, 263510 (2007)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
67.
2007

Laird E. A.; Barthel C.; Rashba E. I.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Hyperfine-Mediated Gate-Driven Electron Spin Resonance
Phys. Rev. Lett. 99, 246601 (2007)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
68.
2007

Gustavsson S.; Studer M.; Leturcq R.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Frequency-Selective Single-Photon Detection Using a Double Quantum Dot
Phys. Rev. Lett. 99, 206804 (2007)
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland;
69.
2007

Bian Z.; Zebarjadi M.; Singh R.; Ezzahri Y.; Shakouri A.; Zeng G.; Bahk J-H.; Bowers J. E.; Zide J. M. O.; Gossard A. C.

Cross-plane Seebeck coefficient and Lorenz number in superlattices
Phys. Rev. B 76, 205311 (2007)
Electrical Engineering Department, University of California, Santa Cruz, California 95064, USA
70.
2007

Hammack A. T.; Ivanov A. L.; Mouchliadis L.; Butov L. V.; Gossard A. C.

Kinetics of indirect excitons in an optically induced trap in GaAs quantum wells
Phys. Rev. B 76, 193308 (2007)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
71.
2007

Crook Adam M.; Lind Erik; Griffith Zach; Rodwell Mark J. W.; Zimmerman Jeremy D.; Gossard Arthur C.; Bank Seth R.

Low resistance, nonalloyed Ohmic contacts to InGaAs
Appl. Phys. Lett. 91, 192114 (2007)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
72.
2007

Gildemeister A. E.; Ihn T.; Schleser R.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Imaging a coupled quantum dot-quantum point contact system
J. Appl. Phys. 102, 083703 (2007)
Laboratory of Solid State Physics, ETH Zürich, CH-8093 Zürich, Switzerland;
73.
2007

Reilly D. J.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Fast single-charge sensing with a rf quantum point contact
Appl. Phys. Lett. 91, 162101 (2007)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
74.
2007

High A. A.; Hammack A. T.; Butov L. V.; Hanson M.; Gossard A. C.

Exciton optoelectronic transistor
Opt. Lett. 32, 2466 (2007)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
75.
2007

Baumgartner A.; Ihn T.; Ensslin K.; Maranowski K.; Gossard A. C.

Quantum Hall effect transition in scanning gate experiments
Phys. Rev. B 76, 085316 (2007)
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
76.
2007

Hanson M. P.; Gossard A. C.; Brown E. R.

Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices
J. Appl. Phys. 102, 043112 (2007)
Materials Department, University of California, Santa Barbara, California 93106-5050
77.
2007

Stern N. P.; Steuerman D. W.; Mack S.; Gossard A. C.; Awschalom D. D.

Drift and diffusion of spins generated by the spin Hall effect
Appl. Phys. Lett. 91, 062109 (2007)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
78.
2007

Zhang Yiming; DiCarlo L.; McClure D. T.; Yamamoto M.; Tarucha S.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Noise Correlations in a Coulomb-Blockaded Quantum Dot
Phys. Rev. Lett. 99, 036603 (2007)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
79.
2007

Chen Hou-Tong; Taylor Antoinette J.; Gossard Arthur C.; Bank Seth R.; Zide Joshua M. O.; Padilla Willie J.; Averitt Richard D.

Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/;GaAs nanoisland superlattices
Opt. Lett. 32, 1620 (2007)
Los Alamos National Laboratory, MPA-CINT, MS K771, Los Alamos, New Mexico 87545, USA
80.
2007

Gildemeister A. E.; Ihn T.; Sigrist M.; Ensslin K.; Driscoll D. C.; Gossard A. C.

In situ treatment of a scanning gate microscopy tip
Appl. Phys. Lett. 90, 213113 (2007)
Laboratory of Solid State Physics, ETH Zürich, CH-8093 Zürich, Switzerland;
81.
2007

Preu S.; Renner F. H.; Malzer S.; Döhler G. H.; Wang L. J.; Hanson M.; Gossard A. C.; Wilkinson T. L. J.; Brown E. R.

Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers
Appl. Phys. Lett. 90, 212115 (2007)
Max Planck Research Group, Institute for Optics, Information and Photonics, University of Erlangen-Nürnberg, D-91058 Erlangen, Germany;
82.
2007

Gildemeister A. E.; Driscoll D. C.; Ensslin K.; Sigrist M.; Ihn T.; Gossard A. C.

Measurement of the tip-induced potential in scanning gate experiments
Phys. Rev. B 75, 195338 (2007)
Laboratory of Solid State Physics, ETH Zürich, CH-8093 Zürich, Switzerland;
83.
2007

Young A. C.; Zimmerman J. D.; Brown E. R.; Gossard A. C.

Low-frequency noise in epitaxially grown Schottky junctions
J. Appl. Phys. 101, 084509 (2007)
University of California Santa Barbara, Santa Barbara, California, 93106
84.
2007

Gildemeister A. E.; Ihn T.; Schleser R.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Scanning Gate Measurements on a Coupled Quantum Dot — Quantum Point Contact System
AIP Conf. Proc. 893, 819 (2007)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
85.
2007

Graf D.; Ihn T.; Ensslin K.; Wegscheider W.; Bichler M.; Driscoll D. C.; Gossard A. C.

Quantum dot with internal substructure
AIP Conf. Proc. 893, 797 (2007)
Solid State Physics Laboratory, ETH Zurich, Switzerland
86.
2007

Ihn T.; Ellenberger C.; Ensslin K.; Yannouleas C.; Landman U.; Driscoll D. C.; Gossard A. C.

Excitation spectra of two correlated electrons in a quantum dot
AIP Conf. Proc. 893, 783 (2007)
Solid State Physics Laboratory, ETH Zurich, CH‐8093 Zurich, Switzerland;
87.
2007

Gustavsson S.; Leturcq R.; Simovič B.; Schleser R.; Ihn T.; Studerus P.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Counting statistics of single electron transport in a quantum dot
AIP Conf. Proc. 893, 751 (2007)
Solid State Physics Laboratory, ETH Zürich, CH‐8093 Zürich, Switzerland;
88.
2007

Leturcq R.; Bianchetti R.; Götz G.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring
AIP Conf. Proc. 893, 709 (2007)
Solid State Physis Laboratory, ETH Zurich, 8093 Zurich, Switzerland
89.
2007

Ellenberger C.; Simovič B.; Leturcq R.; Ihn T.; Ulloa S. E.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Two‐subband quantum Hall effect in parabolic quantum wells
AIP Conf. Proc. 893, 645 (2007)
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
90.
2007

Klenov Dmitri O.; Zide Joshua M. O.; LeBeau James M.; Gossard Arthur C.; Stemmer Susanne

Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers
Appl. Phys. Lett. 90, 121917 (2007)
Materials Department, University of California, Santa Barbara, California 93106-5050
91.
2007

Yi Wei; Narayanamurti Venkatesh; Bank Seth R.; Zide Joshua M. O.; Gossard Arthur C.

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study
Phys. Rev. B 75, 115333 (2007)
Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
92.
2007

McClure D. T.; Hanson M. P.; Marcus C. M.; Engel H.-A.; Zhang Y.; DiCarlo L.; Gossard A. C.

Tunable Noise Cross Correlations in a Double Quantum Dot
Phys. Rev. Lett. 98, 056801 (2007)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
93.
2007

Zeng Gehong; Zide Joshua M. O.; Kim Woochul; Bowers John E.; Gossard Arthur C.; Bian Zhixi; Zhang Yan; Shakouri Ali; Singer Suzanne L.; Majumdar Arun

Cross-plane Seebeck coefficient of ErAs:InGaAs/;InGaAlAs superlattices
J. Appl. Phys. 101, 034502 (2007)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
94.
2007

MacLean K.; Amasha S.; Radu Iuliana P.; Zumbühl D. M.; Kastner M. A.; Hanson M. P.; Gossard A. C.

Energy-Dependent Tunneling in a Quantum Dot
Phys. Rev. Lett. 98, 036802 (2007)
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
95.
2007

Stern N. P.; Myers R. C.; Poggio M.; Gossard A. C.; Awschalom D. D.

Confinement engineering of s-d exchange interactions in Ga1-x;MnxAs/;AlyGa1-y;As quantum wells
Phys. Rev. B 75, 045329 (2007)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
96.
2007

Yang Sen; Mintsev A. V.; Hammack A. T.; Butov L. V.; Gossard A. C.

Repulsive interaction in the macroscopically ordered exciton state in GaAs/;AlxGa1-x;As coupled quantum well structures
Phys. Rev. B 75, 033311 (2007)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
97.
2006

Zide J. M. O.; Vashaee D.; Bian Z. X.; Zeng G.; Bowers J. E.; Shakouri A.; Gossard A. C.

Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga0.47As/;In0.53Ga0.28Al0.19As superlattices
Phys. Rev. B 74, 205335 (2006)
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
98.
2006

Russell K. J.; Narayanamurti V.; Appelbaum Ian; Hanson M. P.; Gossard A. C.

Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy
Phys. Rev. B 74, 205330 (2006)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138, USA
99.
2006

Ellenberger C.; Driscoll D. C.; Ensslin K.; Ulloa S. E.; Ihn T.; Leturcq R.; Simovič B.; Gossard A. C.

Two-subband quantum Hall effect in parabolic quantum wells
Phys. Rev. B 74, 195313 (2006)
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
100.
2006

Gustavsson S.; Leturcq R.; Simovič B.; Schleser R.; Studerus P.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Counting statistics and super-Poissonian noise in a quantum dot: Time-resolved measurements of electron transport
Phys. Rev. B 74, 195305 (2006)
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland;
101.
2006

Yang Sen; Hammack A. T.; Fogler M. M.; Butov L. V.; Gossard A. C.

Coherence Length of Cold Exciton Gases in Coupled Quantum Wells
Phys. Rev. Lett. 97, 187402 (2006)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
102.
2006

Baumgartner A.; Ihn T.; Ensslin K.; Papp G.; Peeters F.; Maranowski K.; Gossard A. C.

Classical Hall effect in scanning gate experiments
Phys. Rev. B 74, 165426 (2006)
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
103.
2006

Myers R. C.; Sheu B. L.; Jackson A. W.; Gossard A. C.; Schiffer P.; Samarth N.; Awschalom D. D.

Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As
Phys. Rev. B 74, 155203 (2006)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
104.
2006

Lau W. H.; Sih V.; Stern N. P.; Myers R. C.; Buell D. A.; Gossard A. C.; Awschalom D. D.

Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells
Appl. Phys. Lett. 89, 142104 (2006)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
105.
2006

Carmeli Itai; Bloom Francisco; Gwinn E. G.; Kreutz T. C.; Scoby Cheyne; Gossard A. C.; Ray S. G.; Naaman Ron

Molecular enhancement of ferromagnetism in GaAs/;GaMnAs heterostructures
Appl. Phys. Lett. 89, 112508 (2006)
California Nanosystems Institute, UCSB, Santa Barbara, California 93016
106.
2006

Hanson M. P.; Gossard A. C.; Brown E. R.

ErAs as a transparent contact at 1.55 μ;m
Appl. Phys. Lett. 89, 111908 (2006)
Materials Department, University of California, Santa Barbara, California 93106-5050
107.
2006

Sih V.; Lau W. H.; Myers R. C.; Gossard A. C.; Horowitz V. R.; Awschalom D. D.

Generating Spin Currents in Semiconductors with the Spin Hall Effect
Phys. Rev. Lett. 97, 096605 (2006)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
108.
2006

Laird E. A.; Petta J. R.; Johnson A. C.; Marcus C. M.; Yacoby A.; Hanson M. P.; Gossard A. C.

Effect of Exchange Interaction on Spin Dephasing in a Double Quantum Dot
Phys. Rev. Lett. 97, 056801 (2006)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
109.
2006

Holleitner A. W.; Sih V.; Myers R. C.; Gossard A. C.; Awschalom D. D.

Suppression of Spin Relaxation in Submicron InGaAs Wires
Phys. Rev. Lett. 97, 036805 (2006)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
110.
2006

Kihara Rurimo G.; Schardt M.; Quabis S.; Malzer S.; Dotzler Ch.; Winkler A.; Leuchs G.; Döhler G. H.; Driscoll D.; Hanson M.; Gossard A. C.; Pereira S. F.

Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam
J. Appl. Phys. 100, 023112 (2006)
Max-Planck-Research-Group, Institute of Optics, Information and Photonics, Günther Scharowsky-Strasse 1/Bau 24, University of Erlangen, D-91058 Erlangen, Germany;
111.
2006

Yi Wei; Appelbaum Ian; Russell Kasey J.; Narayanamurti Venkatesh; Schalek Richard; Hanson Micah P.; Gossard Arthur C.

Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations
J. Appl. Phys. 100, 013105 (2006)
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, Massachusetts 02138
112.
2006

Gelfand Ian J.; Amasha S.; Zumbühl D. M.; Kastner M. A.; Kadow C.; Gossard A. C.

Surface-gated quantum Hall effect in an InAs heterostructure
Appl. Phys. Lett. 88, 252105 (2006)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
113.
2006

O'Hara John F.; Zide J. M. O.; Gossard A. C.; Taylor A. J.; Averitt R. D.

Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices
Appl. Phys. Lett. 88, 251119 (2006)
MST-CINT, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
114.
2006

Sih V.; Knotz H.; Stephens J.; Horowitz V. R.; Gossard A. C.; Awschalom D. D.

Mechanical control of spin-orbit splitting in GaAs and In0.04Ga0.96As epilayers
Phys. Rev. B 73, 241316 (2006)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
115.
2006

Kim Woochul; Singer Suzanne L.; Majumdar Arun; Vashaee Daryoosh; Bian Zhixi; Shakouri Ali; Zeng Gehong; Bowers John E.; Zide Joshua M. O.; Gossard Arthur C.

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/;InGaAlAs superlattices
Appl. Phys. Lett. 88, 242107 (2006)
Department of Mechanical Engineering, University of California, Berkeley, California 94720
116.
2006

Hammack A. T.; Ivanov A. L.; Smallwood L. E.; Butov L. V.; Griswold M.; Gossard A. C.

Trapping of Cold Excitons in Quantum Well Structures with Laser Light
Phys. Rev. Lett. 96, 227402 (2006)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
117.
2006

Taylor Z. D.; Brown E. R.; Bjarnason J. E.; Hanson M. P.; Gossard A. C.

Resonant-optical-cavity photoconductive switch with 0.5% conversion efficiency and ;1.0 ;W peak power
Opt. Lett. 31, 1729 (2006)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
118.
2006

Zumbühl D. M.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Asymmetry of Nonlinear Transport and Electron Interactions in Quantum Dots
Phys. Rev. Lett. 96, 206802 (2006)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
119.
2006

Bloom F. L.; Young A. C.; Myers R. C.; Brown E. R.; Gossard A. C.; Gwinn E. G.

Tunneling through MnAs particles at a GaAs p⁺n⁺ junction
J. Vac. Sci. Technol. B 24, 1639 (2006)
Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106-5050
120.
2006

Zimmerman Jeramy D.; Gossard Arthur C.; Young Adam C.; Miller Merritt P.; Brown Elliott R.

ErAs island-stacking growth technique for engineering textured Schottky interfaces
J. Vac. Sci. Technol. B 24, 1483 (2006)
Materials Department, University of California, Santa Barbara, California 93106-5050
121.
2006

Vidan A.; Stopa M.; Westervelt R. M.; Hanson M.; Gossard A. C.

Multipeak Kondo Effect in One- and Two-Electron Quantum Dots
Phys. Rev. Lett. 96, 156802 (2006)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
122.
2006

Zide J. M. O.; Kleiman-Shwarsctein A.; Strandwitz N. C.; Zimmerman J. D.; Steenblock-Smith T.; Gossard A. C.; Forman A.; Ivanovskaya A.; Stucky G. D.

Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction
Appl. Phys. Lett. 88, 162103 (2006)
Materials Department, University of California, Santa Barbara, California 93106
123.
2006

Ellenberger C.; Driscoll D.; Ensslin K.; Landman U.; Yannouleas C.; Ihn T.; Gossard A. C.

Excitation Spectrum of Two Correlated Electrons in a Lateral Quantum Dot with Negligible Zeeman Splitting
Phys. Rev. Lett. 96, 126806 (2006)
Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland
124.
2006

Leturcq R.; Sánchez D.; Götz G.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Magnetic Field Symmetry and Phase Rigidity of the Nonlinear Conductance in a Ring
Phys. Rev. Lett. 96, 126801 (2006)
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland;
125.
2006

Trumm S.; Betz M.; Sotier F.; Leitenstorfer A.; Schwanhäußer A.; Eckardt M.; Schmidt O.; Malzer S.; Döhler G. H.; Hanson M.; Driscoll D.; Gossard A. C.

Ultrafast spectroscopy of impact ionization and avalanche multiplication in GaAs
Appl. Phys. Lett. 88, 132113 (2006)
Physik-Department E11, TU München, D-85748 Garching, Germany;
126.
2006

Hammack A. T.; Gippius N. A.; Yang Sen; Andreev G. O.; Butov L. V.; Hanson M.; Gossard A. C.

Excitons in electrostatic traps
J. Appl. Phys. 99, 066104 (2006)
Department of Physics, University of California at San Diego, La Jolla, California 92093-0319
127.
2006

Zeng Gehong; Bowers John E.; Zide Joshua M. O.; Gossard Arthur C.; Kim Woochul; Singer Suzanne; Majumdar Arun; Singh Rajeev; Bian Zhixi; Zhang Yan; Shakouri Ali

ErAs:InGaAs/;InGaAlAs superlattice thin-film power generator array
Appl. Phys. Lett. 88, 113502 (2006)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
128.
2006

Graf D.; Frommenwiler M.; Studerus P.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages
J. Appl. Phys. 99, 053707 (2006)
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zurich, Switzerland;
129.
2006

Gustavsson S.; Leturcq R.; Simovič B.; Schleser R.; Ihn T.; Studerus P.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Counting Statistics of Single Electron Transport in a Quantum Dot
Phys. Rev. Lett. 96, 076605 (2006)
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland;
130.
2006

Young A. C.; Zimmerman J. D.; Brown E. R.; Gossard A. C.

1/f; noise in all-epitaxial metal-semiconductor diodes
Appl. Phys. Lett. 88, 073518 (2006)
University of California Santa Barbara, Santa Barbara, California 93106
131.
2005

Poggio M.; Myers R. C.; Stern N. P.; Gossard A. C.; Awschalom D. D.

Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
Phys. Rev. B 72, 235313 (2005)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
132.
2005

Myers R. C.; Gossard A. C.; Stern N. P.; Poggio M.; Awschalom D. D.

Erratum: Antiferromagnetic s-d Exchange Coupling in GaMnAs [Phys. Rev. Lett. 95, 017204 (2005)]
Phys. Rev. Lett. 95, 229902 (2005)
133.
2005

Young A. C.; Zimmerman J. D.; Brown E. R.; Gossard A. C.

Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors
Appl. Phys. Lett. 87, 163506 (2005)
University of California Santa Barbara, Santa Barbara, California 93106
134.
2005

Granger G.; Kastner M. A.; Radu Iuliana; Hanson M. P.; Gossard A. C.

Two-stage Kondo effect in a four-electron artificial atom
Phys. Rev. B 72, 165309 (2005)
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
135.
2005

Johnson A. C.; Petta J. R.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
Phys. Rev. B 72, 165308 (2005)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
136.
2005

Petta J. R.; Hanson M. P.; Marcus C. M.; Yacoby A.; Johnson A. C.; Gossard A. C.

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot
Phys. Rev. B 72, 161301 (2005)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
137.
2005

Carter S. G.; Coldren L. A.; Gossard A. C.; Wang C. S.; Huntington A. S.; Hanson M.; Ciulin V.; Sherwin M. S.

Terahertz-optical mixing in undoped and doped GaAs quantum wells: From excitonic to electronic intersubband transitions
Phys. Rev. B 72, 155309 (2005)
Physics Department and iQUEST, University of California, Santa Barbara, California 93106, USA
138.
2005

Leturcq R.; Schmid L.; Ensslin K.; Meir Y.; Driscoll D. C.; Gossard A. C.

Probing the Kondo Density of States in a Three-Terminal Quantum Ring
Phys. Rev. Lett. 95, 126603 (2005)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
139.
2005

Zide J. M.; Klenov D. O.; Stemmer S.; Gossard A. C.; Zeng G.; Bowers J. E.; Vashaee D.; Shakouri A.

Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles
Appl. Phys. Lett. 87, 112102 (2005)
Department of Materials, University of California, Santa Barbara, California 93106-5050
140.
2005

Zimmerman Jeramy D.; Brown Elliott R.; Gossard Arthur C.

Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs
J. Vac. Sci. Technol. B 23, 1929 (2005)
Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106
141.
2005

Zumbühl D. M.; Miller J. B.; Marcus C. M.; Goldhaber-Gordon D.; Harris J. S.; Campman K.; Gossard A. C.

Conductance fluctuations and partially broken spin symmetries in quantum dots
Phys. Rev. B 72, 081305 (2005)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
142.
2005

Deviatov E. V.; Dolgopolov V. T.; Würtz A.; Lorke A.; Wixforth A.; Wegscheider W.; Campman K. L.; Gossard A. C.

Topological defects in the edge-state structure in a bilayer electron system
Phys. Rev. B 72, 041305 (2005)
Institute of Solid State Physics RAS, Chernogolovka, Moscow District 142432, Russia
143.
2005

Schleser R.; Ihn T.; Ruh E.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Finite-bias charge detection in a quantum dot
Phys. Rev. B 72, 035312 (2005)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
144.
2005

Kato Y. K.; Myers R. C.; Gossard A. C.; Awschalom D. D.

Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel
Appl. Phys. Lett. 87, 022503 (2005)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
145.
2005

Myers R. C.; Poggio M.; Stern N. P.; Gossard A. C.; Awschalom D. D.

Antiferromagnetic s-d Exchange Coupling in GaMnAs
Phys. Rev. Lett. 95, 017204 (2005)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
146.
2005

Hanson M. P.; Driscoll D. C.; Brown E. R.; Gossard A. C.

Strong sub‐bandgap absorption in GaSb/ErSb nanocomposites attributed to plasma resonances of semimetallic ErSb nanoparticles
AIP Conf. Proc. 772, 845 (2005)
Materials Department, University of California, Santa Barbara 93106
147.
2005

Leturcq R.; Graf D.; Ihn T.; Ensslin K.; Driscoll D. D.; Gossard A. C.

Multi‐terminal transport through semi‐conductor quantum dots
AIP Conf. Proc. 772, 811 (2005)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
148.
2005

Fallahi P.; Bleszynski A. C.; Westervelt R. M.; Huang J.; Walls J. D.; Heller E. J.; Hanson M.; Gossard A. C.

Imaging Electrons in a Single‐Electron Quantum Dot
AIP Conf. Proc. 772, 779 (2005)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
149.
2005

Schleser R.; Ruh E.; Ihn T.; Ensslin K.; Driscoll D. D.; Gossard A. C.

Time resolved single electron detection in a quantum dot
AIP Conf. Proc. 772, 775 (2005)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
150.
2005

Baumgartner A.; Ihn T.; Ensslin K.; Maranowski K.; Gossard A. C.

Local Investigation of the Classical and Quantum Hall effect
AIP Conf. Proc. 772, 509 (2005)
Solid State Physics Laboratory, ETH Hönggerberg, CH‐8093 Zürich, Switzerland;
151.
2005

Sigrist M.; Fuhrer A.; Ihn T.; Ensslin K.; Driscoll D. D.; Gossard A. C.

Double quantum dot with integrated charge readout fabricated by layered SFM‐lithography
AIP Conf. Proc. 772, 1503 (2005)
Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland;
152.
2005

Bleszynski A. C.; Aidala K. E.; LeRoy B. J.; Westervelt R. M.; Heller E. J.; Maranowski K. D.; Gossard A. C.

Imaging Electron Interferometer
AIP Conf. Proc. 772, 1461 (2005)
Dept of Physics
153.
2005

Renner F. H.; Klar O.; Malzer S.; Driscoll D.; Hanson M.; Gossard A. C.; Loata G.; Löffler T.; Roskos H.; Döhler G. H.

The nipnip‐THz‐emitter; photomixing based on ballistic transport
AIP Conf. Proc. 772, 1220 (2005)
Institute for Technical Physics I, University Erlangen‐Nürnberg, 91058 Erlangen, Germany;
154.
2005

Marderfeld I.; Gershoni D.; Ehrenfreund E.; Gossard A. C.

Radiative lifetime and dephasing of excitons studied by femtosecond time resolved intersubband spectroscopy
AIP Conf. Proc. 772, 1174 (2005)
Physics Department, Technion‐Israel Institute of Technology, Haifa 32000, Israel;
155.
2005

Vieira G. S.; Villas-Bôas J. M.; Guimarães P. S. S.; Studart N.; Kono J.; Allen S. J.; Campman K. L.; Gossard A. C.

Intersubband Tunneling without Intrasubband Relaxation in Multi‐quantum Wells
AIP Conf. Proc. 772, 1143 (2005)
Instituto de Estudos Avançados, Centro Técnico Aeroespacial, 12228‐840 São José dos Campos, SP, Brazil;
156.
2005

Klenov Dmitri O.; Zide Joshua M.; Zimmerman Jeramy D.; Gossard Arthur C.; Stemmer Susanne

Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs
Appl. Phys. Lett. 86, 241901 (2005)
Materials Department, University of California, Santa Barbara, California 93106-5050
157.
2005

Schleser R.; Ihn T.; Ruh E.; Ensslin K.; Tews M.; Pfannkuche D.; Driscoll D. C.; Gossard A. C.

Cotunneling-Mediated Transport through Excited States in the Coulomb-Blockade Regime
Phys. Rev. Lett. 94, 206805 (2005)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
158.
2005

Prasankumar R. P.; Scopatz A.; Hilton D. J.; Taylor A. J.; Averitt R. D.; Zide J. M.; Gossard A. C.

Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy
Appl. Phys. Lett. 86, 201107 (2005)
MST-10, Condensed Matter and Thermal Physics, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
159.
2005

Holleitner A. W.; Knotz H.; Gossard A. C.; Myers R. C.; Awschalom D. D.

Manipulating a domain wall in (Ga,Mn)As
J. Appl. Phys. 97, 10D314 (2005)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
160.
2005

Kadow C.; Gossard A. C.; Rodwell M. J. W.

Regrown-emitter InP heterojunction bisucpolar transistors
J. Vac. Sci. Technol. B 23, 1140 (2005)
ECE Department, University of California, Santa Barbara, California 93106-9560
161.
2005

Kato Y. K.; Myers R. C.; Gossard A. C.; Awschalom D. D.

Electron spin interferometry using a semiconductor ring structure
Appl. Phys. Lett. 86, 162107 (2005)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
162.
2005

Trumm S.; Betz M.; Sotier F.; Leitenstorfer A.; Schwanhäußer A.; Eckardt M.; Malzer S.; Hanson M.; Driscoll D.; Gossard A. C.; Döhler G. H.

Femtosecond spectroscopy of unipolar nanometer-scale high-field transport of holes in Al0.08Ga0.92As
Appl. Phys. Lett. 86, 142105 (2005)
Physik-Department E 11, Technische Universität München, D-85748 Garching, Germany;
163.
2005

LeRoy B. J.; Bleszynski A. C.; Aidala K. E.; Westervelt R. M.; Kalben A.; Heller E. J.; Shaw S. E. J.; Maranowski K. D.; Gossard A. C.

Imaging Electron Interferometer
Phys. Rev. Lett. 94, 126801 (2005)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
164.
2005

Russell K. J.; Appelbaum Ian; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Transverse momentum nonconservation at the ErAs/;GaAs interface
Phys. Rev. B 71, 121311 (2005)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138, USA
165.
2005

Johnson A. C.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Charge sensing of excited states in an isolated double quantum dot
Phys. Rev. B 71, 115333 (2005)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
166.
2005

Klenov Dmitri O.; Driscoll Daniel C.; Gossard Arthur C.; Stemmer Susanne

Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers
Appl. Phys. Lett. 86, 111912 (2005)
Materials Department, University of California, Santa Barbara, California 93106-5050
167.
2005

Appelbaum Ian; Yi Wei; Russell K. J.; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Vertically integrated optics for ballistic electron emission luminescence microscopy
Appl. Phys. Lett. 86, 063110 (2005)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138 and Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716
168.
2005

Driscoll D. C.; Hanson M. P.; Gossard A. C.; Brown E. R.

Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles
Appl. Phys. Lett. 86, 051908 (2005)
Materials Department, University of California, Santa Barbara, California 93106-5050
169.
2005

Walling H. A.; Maranowski K. D.; Gwinn E. G.; Gossard A. C.

Variable-range hopping in the bulk of quantum Hall multilayers
Phys. Rev. B 71, 045327 (2005)
Physics Department, UCSB, Santa Barbara, California 93106, USA
170.
2005

Dorn A.; Bieri E.; Ihn T.; Ensslin K.; Driscoll D. D.; Gossard A. C.

Interplay between the periodic potential modulation and random background scatterers in an antidot lattice
Phys. Rev. B 71, 035343 (2005)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
171.
2005

Lin H.-K.; Kadow C.; Nagy G.; Sullivan G.; Brar B.; Gossard A. C.; Rodwell M. J. W.; Bae J.-U.; Bergman J.

Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors
J. Appl. Phys. 97, 024505 (2005)
Materials Department, Electrical & Computer Engineering Department, University of California, Santa Barbara, California 93106-5050;
172.
2005

Driscoll D. C.; Hanson M. P.; Gossard A. C.

Carrier compensation in semiconductors with buried metallic nanoparticles
J. Appl. Phys. 97, 016102 (2005)
Materials Department, University of California, Santa Barbara, California 93106-5050
173.
2004

Zumbühl D. M.; Hanson M. P.; Marcus C. M.; Gossard A. C.

Cotunneling Spectroscopy in Few-Electron Quantum Dots
Phys. Rev. Lett. 93, 256801 (2004)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
174.
2004

Walling H. A.; Gwinn E. G.; Xu J.; Maranowski K. D.; Gossard A. C.

Temperature dependence of conductance fluctuations in quantum Hall multilayers
Phys. Rev. B 70, 235343 (2004)
Physics Department, UCSB, Santa Barbara, California 93106, USA
175.
2004

Krauß J.; Kotthaus J. P.; Wixforth A.; Hanson M.; Driscoll D. C.; Gossard A. C.; Schuh D.; Bichler M.

Capture and release of photonic images in a quantum well
Appl. Phys. Lett. 85, 5830 (2004)
Sektion Physik and Center for NanoScience, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany;
176.
2004

Holleitner A. W.; Knotz H.; Myers R. C.; Gossard A. C.; Awschalom D. D.

Pinning a domain wall in (Ga,Mn)As with focused ion beam lithography
Appl. Phys. Lett. 85, 5622 (2004)
Center for Spintronics and Quantum Computation, University of California–Santa Barbara, Santa Barbara, California 93106;
177.
2004

Brown E. R.; Bjarnason J.; Chan T. L. J.; Driscoll D. C.; Hanson M.; Gossard A. C.

Room temperature, THz photomixing sweep oscillator and its application to spectroscopic transmission through organic materials
Rev. Sci. Instrum. 75, 5333 (2004)
University of California, Santa Barbara, California 93106
178.
2004

Kičin S.; Pioda A.; Driscoll D. C.; Ensslin K.; Ihn T.; Gossard A. C.

Local backscattering in the quantum Hall regime
Phys. Rev. B 70, 205302 (2004)
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
179.
2004

Kreutz T. C.; Allen W. D.; Zanelatto G.; Gwinn E. G.; Gossard A. C.

Effects of growth temperature on magnetism in digital ferromagnetic heterostructures
Phys. Rev. B 70, 195208 (2004)
Physics Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA
180.
2004

Russell K. J.; Appelbaum Ian; Yi Wei; Monsma D. J.; Capasso F.; Marcus C. M.; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Avalanche spin-valve transistor
Appl. Phys. Lett. 85, 4502 (2004)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
181.
2004

Bjarnason J. E.; Chan T. L. J.; Lee A. W. M.; Brown E. R.; Driscoll D. C.; Hanson M.; Gossard A. C.; Muller R. E.

ErAs:GaAs photomixer with two-decade tunability and 12 μ;W peak output power
Appl. Phys. Lett. 85, 3983 (2004)
ECE Department, University of California, Santa Barbara, California 93106
182.
2004

Petta J. R.; Johnson A. C.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Manipulation of a Single Charge in a Double Quantum Dot
Phys. Rev. Lett. 93, 186802 (2004)
183.
2004

Kato Y. K.; Myers R. C.; Gossard A. C.; Awschalom D. D.

Current-Induced Spin Polarization in Strained Semiconductors
Phys. Rev. Lett. 93, 176601 (2004)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
184.
2004

Vidan A.; Westervelt R. M.; Stopa M.; Hanson M.; Gossard A. C.

Triple quantum dot charging rectifier
Appl. Phys. Lett. 85, 3602 (2004)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
185.
2004

Sigrist M.; Fuhrer A.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Multiple layer local oxidation for fabricating semiconductor nanostructures
Appl. Phys. Lett. 85, 3558 (2004)
Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland;
186.
2004

Sih V.; Flatté M. E.; Gossard A. C.; Myers R. C.; Lau W. H.; Awschalom D. D.

Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas
Phys. Rev. B 70, 161313 (2004)
Center for Spintronics and Quantum Information, University of California, Santa Barbara, California 93106, USA
187.
2004

Hanson M. P.; Driscoll D. C.; Zimmerman J. D.; Gossard A. C.; Brown E. R.

Subpicosecond photocarrier lifetimes in GaSb/;ErSb nanoparticle superlattices at 1.55 μ;m
Appl. Phys. Lett. 85, 3110 (2004)
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106-5050
188.
2004

Appelbaum Ian; Russell K. J.; Shalish I.; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Ballistic hole emission luminescence
Appl. Phys. Lett. 85, 2265 (2004)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
189.
2004

Allen W.; Kreutz T. C.; Gwinn E. G.; Gossard A. C.

Anomalous Hall effect in ferromagnetic semiconductors with hopping transport
Phys. Rev. B 70, 125320 (2004)
Physics Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA
190.
2004

Poggio M.; Steeves G. M.; Myers R. C.; Stern N. P.; Gossard A. C.; Awschalom D. D.

Spin transfer and coherence in coupled quantum wells
Phys. Rev. B 70, 121305 (2004)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
191.
2004

Schleser R.; Ruh E.; Ihn T.; Ensslin K.; Driscoll D. C.; Gossard A. C.

Time-resolved detection of individual electrons in a quantum dot
Appl. Phys. Lett. 85, 2005 (2004)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
192.
2004

Yi Wei; Appelbaum Ian; Russell K. J.; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure
Appl. Phys. Lett. 85, 1990 (2004)
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, Massachusetts 02138
193.
2004

Johnson A. C.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Coulomb-Modified Fano Resonance in a One-Lead Quantum Dot
Phys. Rev. Lett. 93, 106803 (2004)
194.
2004

Stephens J.; Gossard A. C.; Sham L. J.; McGuire J. P.; Berezovsky J.; Awschalom D. D.

Spin Accumulation in Forward-Biased MnAs/GaAs Schottky Diodes
Phys. Rev. Lett. 93, 097602 (2004)
195.
2004

Stephens J.; Berezovsky J.; Kawakami R. K.; Gossard A. C.; Awschalom D. D.

Optically patterned nuclear doughnuts in GaAs/;MnAs heterostructures
Appl. Phys. Lett. 85, 1184 (2004)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
196.
2004

Walling H. A.; Maranowski K. D.; Gwinn E. G.; Druist D. P.; Dougherty D. P.; Gossard A. C.

Anomalous temperature dependence of electrical transport in quantum Hall multilayers
Phys. Rev. B 70, 045312 (2004)
Physics Department, University of California, Santa Barbara, California 93106, USA
197.
2004

Vieira G. S.; Campman K. L.; Allen S. J.; Kono J.; Studart Nelson; Guimarães P. S. S.; Villas-Bôas J. M.; Gossard A. C.

Magnetically tuned resonant photon-assisted tunneling
Phys. Rev. B 70, 035316 (2004)
Instituto de Estudos Avançados, Centro Técnico Aeroespacial, 12228-840 São José dos Campos, São Paulo, Brazil;
198.
2004

DiCarlo L.; Lynch H. J.; Johnson A. C.; Childress L. I.; Crockett K.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot
Phys. Rev. Lett. 92, 226801 (2004)
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
199.
2004

Schuller J. A.; Johnston-Halperin E.; Gallinat C. S.; Gossard A. C.; Knotz H.; Awschalom D. D.

Structural engineering of ferromagnetism in III–V digital ferromagnetic heterostructures
J. Appl. Phys. 95, 4922 (2004)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106;
200.
2004

Myers R. C.; Gossard A. C.; Awschalom D. D.

Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier
Phys. Rev. B 69, 161305 (2004)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA;
201.
2004

Butov L. V.; Levitov L. S.; Mintsev A. V.; Simons B. D.; Gossard A. C.; Chemla D. S.

Formation Mechanism and Low-Temperature Instability of Exciton Rings
Phys. Rev. Lett. 92, 117404 (2004)
202.
2004

Kreutz T. C.; Allen W. D.; Gwinn E. G.; Awschalom D. D.; Gossard A. C.

Structure-controlled magnetic anisotropy in ferromagnetic semiconductor superlattices
Phys. Rev. B 69, 081302 (2004)
Physics Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA;
203.
2004

Carter S. G.; Ciulin V.; Sherwin M. S.; Hanson M.; Huntington A.; Coldren L. A.; Gossard A. C.

Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation
Appl. Phys. Lett. 84, 840 (2004)
Department of Physics and iQUEST, University of California, Santa Barbara, California 93106;
204.
2004

Appelbaum Ian; Russell K. J.; Kozhevnikov M.; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope
Appl. Phys. Lett. 84, 547 (2004)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138;
205.
2004

Lin H.-K.; Kadow C.; Dahlström M.; Bae J.-U.; Rodwell M. J. W.; Gossard A. C.; Brar B.; Sullivan G.; Nagy G.; Bergman J.

InAs/InAsP composite channels for antimonide-based field-effect transistors
Appl. Phys. Lett. 84, 437 (2004)
Department of Materials, and Department of Electrical, and Computer Engineering, University of California, Santa Barbara, California 93106-5050;
206.
2004

Hanson M. P.; Driscoll D. C.; Kadow C.; Gossard A. C.

Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb
Appl. Phys. Lett. 84, 221 (2004)
Materials Department, University of California, Santa Barbara, California 93106-5050;
207.
2003

Appelbaum Ian; Russell K. J.; Monsma D. J.; Narayanamurti V.; Marcus C. M.; Hanson M. P.; Gossard A. C.

Luminescent spin-valve transistor
Appl. Phys. Lett. 83, 4571 (2003)
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138;
208.
2003

Poggio M.; Gossard A. C.; Kato Y.; Myers R. C.; Steeves G. M.; Awschalom D. D.

Local Manipulation of Nuclear Spin in a Semiconductor Quantum Well
Phys. Rev. Lett. 91, 207602 (2003)
Center for Spintronics and Quantum Computing, University of California, Santa Barbara, California 93106, USA
209.
2003

Pohl P.; Renner F. H.; Eckardt M.; Schwanhäußer A.; Friedrich A.; Yüksekdag Ö.; Malzer S.; Döhler G. H.; Kiesel P.; Driscoll D.; Hanson M.; Gossard A. C.

Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers
Appl. Phys. Lett. 83, 4035 (2003)
Friedrich-Alexander-Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, D-91058 Erlangen, Germany;
210.
2003

Sukhotin M.; Brown E. R.; Driscoll D.; Hanson M.; Gossard A. C.

Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μ;m
Appl. Phys. Lett. 83, 3921 (2003)
Electrical Engineering Department, University of California, Los Angeles, California 90095;
211.
2003

Johnston-Halperin E.; Schuller J. A.; Gallinat C. S.; Kreutz T. C.; Myers R. C.; Kawakami R. K.; Knotz H.; Gossard A. C.; Awschalom D. D.

Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures
Phys. Rev. B 68, 165328 (2003)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA;
212.
2003

Druist D. P.; Gwinn E. G.; Maranowski K. D.; Gossard A. C.

Anisotropic magnetic response of a chiral conducting film
Phys. Rev. B 68, 075305 (2003)
Physics Department, UCSB, Santa Barbara, California 93106, USA;
213.
2003

Stephens J.; Kawakami R. K.; Berezovsky J.; Hanson M.; Shepherd D. P.; Gossard A. C.; Awschalom D. D.

Spatial imaging of magnetically patterned nuclear spins in GaAs
Phys. Rev. B 68, 041307 (2003)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA;
214.
2003

Epstein R. J.; Stephens J.; Hanson M.; Chye Y.; Gossard A. C.; Petroff P. M.; Awschalom D. D.

Voltage control of nuclear spin in ferromagnetic Schottky diodes
Phys. Rev. B 68, 041305 (2003)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA;
215.
2003

Appelbaum Ian; Russell K. J.; Narayanamurti V.; Monsma D. J.; Marcus C. M.; Hanson M. P.; Gossard A. C.; Temkin H.; Perry C. H.

Ballistic electron emission luminescence
Appl. Phys. Lett. 82, 4498 (2003)
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139;
216.
2003

Harris J. G. E.; Knobel R.; Maranowski K. D.; Gossard A. C.; Samarth N.; Awschalom D. D.

Damping of micromechanical structures by paramagnetic relaxation
Appl. Phys. Lett. 82, 3532 (2003)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
217.
2003

Griebel M.; Smet J. H.; Kuhl J.; von Klitzing K.; Driscoll D. C.; Kadow C.; Gossard A. C.

Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment
Appl. Phys. Lett. 82, 3179 (2003)
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany;
218.
2003

Sukhotin M.; Brown E. R.; Gossard A. C.; Driscoll D.; Hanson M.; Maker P.; Muller R.

Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm
Appl. Phys. Lett. 82, 3116 (2003)
Electrical Engineering Department, University of California at Los Angeles, Los Angeles, California 90095;
219.
2003

Russell K. J.; Appelbaum Ian; Temkin H.; Perry C. H.; Narayanamurti V.; Hanson M. P.; Gossard A. C.

Room-temperature electro-optic up-conversion via internal photoemission
Appl. Phys. Lett. 82, 2960 (2003)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138;
220.
2003

Dorn A.; Peter M.; Kicin S.; Ihn T.; Ensslin K.; Driscoll D.; Gossard A. C.

Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures
Appl. Phys. Lett. 82, 2631 (2003)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
221.
2003

Ku K. C.; Potashnik S. J.; Wang R. F.; Chun S. H.; Schiffer P.; Samarth N.; Seong M. J.; Mascarenhas A.; Johnston-Halperin E.; Myers R. C.; Gossard A. C.; Awschalom D. D.

Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers
Appl. Phys. Lett. 82, 2302 (2003)
Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802;
222.
2003

Brown E. R.; Kadow C.; Hanson M.; Driscoll D.; Bacher A.; Gossard A. C.

Evidence for a Strong Surface-Plasmon Resonance on ErAs Nanoparticles in GaAs
Phys. Rev. Lett. 90, 077403 (2003)
223.
2003

Miller J. B.; Zumbühl D. M.; Marcus C. M.; Lyanda-Geller Y. B.; Goldhaber-Gordon D.; Campman K.; Gossard A. C.

Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport
Phys. Rev. Lett. 90, 076807 (2003)
224.
2003

Kadow C.; Johnson J. A.; Kolstad K.; Gossard A. C.

Growth-temperature dependence of the microstructure of ErAs islands in GaAs
J. Vac. Sci. Technol. B 21, 29 (2003)
Materials Department, University of California, Santa Barbara, California 93106-5050;
225.
2002

Zumbühl D. M.; Campman K.; Marcus C. M.; Miller J. B.; Gossard A. C.

Spin-Orbit Coupling, Antilocalization, and Parallel Magnetic Fields in Quantum Dots
Phys. Rev. Lett. 89, 276803 (2002)
226.
2002

Kreutz T. C.; Zanelatto G.; Gwinn E. G.; Gossard A. C.

Spacer-dependent transport and magnetic properties of digital ferromagnetic heterostructures
Appl. Phys. Lett. 81, 4766 (2002)
Physics Department, University of California, Santa Barbara, California 93106;
227.
2002

Fromer N. A.; Schüller C.; Lai C. W.; Chemla D. S.; Perakis I. E.; Driscoll D.; Gossard A. C.

Coulomb correlations in a two-dimensional electron gas in large magnetic fields
Phys. Rev. B 66, 205314 (2002)
Department of Physics, University of California at Berkeley, Berkeley, California 94720
228.
2002

Lindemann S.; Ihn T.; Heinzel T.; Zwerger W.; Ensslin K.; Maranowski K.; Gossard A. C.

Stability of spin states in quantum dots
Phys. Rev. B 66, 195314 (2002)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
229.
2002

Lindemann S.; Bänninger M.; Ihn T.; Heinzel T.; Ulloa S. E.; Ensslin K.; Maranowski K.; Gossard A. C.

Lateral superlattices on parabolic quantum wells
Phys. Rev. B 66, 165317 (2002)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
230.
2002

Lindemann S.; Ihn T.; Bieri S.; Heinzel T.; Ensslin K.; Hackenbroich G.; Maranowski K.; Gossard A. C.

Bouncing states in quantum dots
Phys. Rev. B 66, 161312 (2002)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
231.
2002

Cleland A. N.; Aldridge J. S.; Driscoll D. C.; Gossard A. C.

Nanomechanical displacement sensing using a quantum point contact
Appl. Phys. Lett. 81, 1699 (2002)
Department of Physics and iQUEST, University of California, Santa Barbara, California, 93106
232.
2002

Fromer N. A.; Lai C. E.; Chemla D. S.; Perakis I. E.; Driscoll D.; Gossard A. C.

Dynamics of Inter-Landau-Level Excitations of a Two-Dimensional Electron Gas in the Quantum Hall Regime
Phys. Rev. Lett. 89, 067401 (2002)
Department of Physics, University of California at Berkeley, Berkeley, California 94720
233.
2002

LeRoy B. J.; Topinka M. A.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Imaging electron density in a two-dimensional electron gas
Appl. Phys. Lett. 80, 4431 (2002)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
234.
2002

Shtrichman I.; Ron Amiram; Gershoni D.; Ehrenfreund E.; Maranowski K. D.; Gossard A. C.

Temporal evolution of the excitonic distribution function in GaAs/Al0.33Ga0.67As superlattices
Phys. Rev. B 65, 153302 (2002)
Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel;
235.
2002

Epstein R. J.; Gossard A. C.; Petroff P. M.; Hanson M.; Chye Y.; Kawakami R. K.; Malajovich I.; Awschalom D. D.

Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization
Phys. Rev. B 65, 121202 (2002)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106;
236.
2002

Chan I. H.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Strongly capacitively coupled quantum dots
Appl. Phys. Lett. 80, 1818 (2002)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
237.
2002

Johnston-Halperin E.; Gossard A. C.; Coldren L.; Young D. K.; Kawakami R. K.; Lofgreen D.; Awschalom D. D.

Spin-polarized Zener tunneling in (Ga,Mn)As
Phys. Rev. B 65, 041306 (2002)
Department of Physics, University of California, Santa Barbara, California 93106;
238.
2002

Shtrichman I.; Metzner C.; Ehrenfreund E.; Gershoni D.; Maranowski K. D.; Gossard A. C.

Depolarization shift of the intersubband resonance in a quantum well with an electron-hole plasma
Phys. Rev. B 65, 035310 (2002)
Physics Department and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel;
239.
2001

Butov L. V.; Campman K. L.; Lozovik Yu. E.; Chemla D. S.; Lai C. W.; Gossard A. C.

Observation of Magnetically Induced Effective-Mass Enhancement of Quasi-2D Excitons
Phys. Rev. Lett. 87, 216804 (2001)
240.
2001

Chen L. H.; Topinka M. A.; LeRoy B. J.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Charge-imaging field-effect transistor
Appl. Phys. Lett. 79, 1202 (2001)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
241.
2001

Williams J. B.; Sherwin M. S.; Maranowski K. D.; Gossard A. C.

Dissipation of Intersubband Plasmons in Wide Quantum Wells
Phys. Rev. Lett. 87, 037401 (2001)
242.
2001

Woodside Michael T.; Vale Chris; McEuen Paul L.; Kadow C.; Maranowski K. D.; Gossard A. C.

Imaging interedge-state scattering centers in the quantum Hall regime
Phys. Rev. B 64, 041310 (2001)
Department of Physics, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720;
243.
2001

Duncan D. S.; Topinka M. A.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Aharonov-Bohm phase shift in an open electron resonator
Phys. Rev. B 64, 033310 (2001)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
244.
2001

Kycia J. B.; Chen J.; Therrien R.; Kurdak Ç.; Campman K. L.; Gossard A. C.; Clarke John

Effects of Dissipation on a Superconducting Single Electron Transistor
Phys. Rev. Lett. 87, 017002 (2001)
245.
2001

Driscoll D. C.; Hanson M.; Kadow C.; Gossard A. C.

Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs
J. Vac. Sci. Technol. B 19, 1631 (2001)
Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106-5050;
246.
2001

Butov L. V.; Ivanov A. L.; Imamoglu A.; Littlewood P. B.; Shashkin A. A.; Dolgopolov V. T.; Campman K. L.; Gossard A. C.

Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons
Phys. Rev. Lett. 86, 5608 (2001)
247.
2001

Harris J. G. E.; Knobel R.; Maranowski K. D.; Gossard A. C.; Samarth N.; Awschalom D. D.

Magnetization Measurements of Magnetic Two-Dimensional Electron Gases
Phys. Rev. Lett. 86, 4644 (2001)
248.
2001

Driscoll D. C.; Hanson M.; Kadow C.; Gossard A. C.

Electronic structure and conduction in a metal–semiconductor digital composite; ErAs:InGaAs
Appl. Phys. Lett. 78, 1703 (2001)
Materials Department, University of California–Santa Barbara, Santa Barbara, California 93106-5050;
249.
2001

Duncan D. S.; Topinka M. A.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Interaction of tunnel-coupled quantum dots in a magnetic field
Phys. Rev. B 63, 045311 (2001)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
250.
2000

Kawakami R. K.; Johnston-Halperin E.; Chen L. F.; Hanson M.; Guébels N.; Speck J. S.; Gossard A. C.; Awschalom D. D.

Erratum: “(Ga,Mn)As as a digital ferromagnetic heterostructure” [Appl. Phys. Lett. ;77, 2379 (2000)]
Appl. Phys. Lett. 77, 3665 (2000)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106
251.
2000

Lu W.; Rimberg A. J.; Maranowski K. D.; Gossard A. C.

Single-electron transistor strongly coupled to an electrostatically defined quantum dot
Appl. Phys. Lett. 77, 2746 (2000)
Department of Physics, Rice University, Houston, Texas 77005;
252.
2000

Jena Debdeep; Gossard Arthur C.; Mishra Umesh K.

Dipole scattering in polarization induced III–V nitride two-dimensional electron gases
J. Appl. Phys. 88, 4734 (2000)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
253.
2000

Kawakami R. K.; Johnston-Halperin E.; Chen L. F.; Hanson M.; Guébels N.; Speck J. S.; Gossard A. C.; Awschalom D. D.

(Ga,Mn)As as a digital ferromagnetic heterostructure
Appl. Phys. Lett. 77, 2379 (2000)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106;
254.
2000

Duncan D. S.; Goldhaber-Gordon D.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field
Appl. Phys. Lett. 77, 2183 (2000)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
255.
2000

Munteanu F. M.; Kim Yongmin; Sundaram M.; Rickel D. G.; Heiman D.; Perry C. H.; Gossard A. C.

Polarization-dependent spectral redshifts at ν=1; and ν=2; in a GaAs quantum well in high magnetic fields up to 60 T
Phys. Rev. B 62, 4249 (2000)
National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545;
256.
2000

Butov L. V.; Mintsev A. V.; Lozovik Yu. E.; Campman K. L.; Gossard A. C.

From spatially indirect excitons to momentum-space indirect excitons by an in-plane magnetic field
Phys. Rev. B 62, 1548 (2000)
Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia;
257.
2000

Kadow C.; Johnson J. A.; Kolstad K.; Ibbetson J. P.; Gossard A. C.

Growth and microstructure of self-assembled ErAs islands in GaAs
J. Vac. Sci. Technol. B 18, 2197 (2000)
Materials Department, University of California, Santa Barbara, California 93106-5050
258.
2000

Maranowski K. D.; Gossard A. C.

Far-infrared electroluminescence from parabolic quantum well superlattices excited by resonant tunneling injection
J. Appl. Phys. 88, 172 (2000)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106;
259.
2000

Kadow C.; Jackson A. W.; Gossard A. C.; Matsuura S.; Blake G. A.

Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation
Appl. Phys. Lett. 76, 3510 (2000)
Materials Department, University of California–Santa Barbara, Santa Barbara, California 93106-5050;
260.
2000

Shtrichman I.; Mizrahi U.; Gershoni D.; Ehrenfreund E.; Maranowski K. D.; Gossard A. C.

Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption
Appl. Phys. Lett. 76, 2988 (2000)
Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Haifa, Israel;
261.
2000

Harris J. G. E.; Awschalom D. D.; Maranowski K. D.; Gossard A. C.

Magnetization and dissipation measurements in the quantum Hall regime using an integrated micromechanical magnetometer
J. Appl. Phys. 87, 5102 (2000)
Department of Physics, University of California, Santa Barbara, California 93106;
262.
2000

Jena Debdeep; Gossard Arthur C.; Mishra Umesh K.

Dislocation scattering in a two-dimensional electron gas
Appl. Phys. Lett. 76, 1707 (2000)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
263.
2000

Khrapai V. S.; Deviatov E. V.; Shashkin A. A.; Dolgopolov V. T.; Hastreiter F.; Wixforth A.; Campman K. L.; Gossard A. C.

Canted Antiferromagnetic Phase in a Double Quantum Well in a Tilted Quantizing Magnetic Field
Phys. Rev. Lett. 84, 725 (2000)
Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia
264.
1999

Streibl M.; Wixforth A.; Kotthaus J. P.; Govorov A. O.; Kadow C.; Gossard A. C.

Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves
Appl. Phys. Lett. 75, 4139 (1999)
Sektion Physik der LMU, Geschwister-Scholl-Platz 1, D-80539 München, Germany;
265.
1999

Fromer N. A.; Schüller C.; Chemla D. S.; Maranowski K.; Perakis I. E.; Shahbazyan T. V.; Gossard A. C.

Electronic Dephasing in the Quantum Hall Regime
Phys. Rev. Lett. 83, 4646 (1999)
Department of Physics, University of California at Berkeley, Berkeley, California 94720
266.
1999

Kadow C.; Fleischer S. B.; Ibbetson J. P.; Bowers J. E.; Gossard A. C.; Dong J. W.; Palmstrøm C. J.

Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
Appl. Phys. Lett. 75, 3548 (1999)
Materials Department, University of California—Santa Barbara, Santa Barbara, California 93106-5050;
267.
1999

Kadow C.; Fleischer S. B.; Ibbetson J. P.; Bowers J. E.; Gossard A. C.

Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates
Appl. Phys. Lett. 75, 2575 (1999)
Materials Department, University of California, Santa Barbara, California 93106-5050;
268.
1999

Livermore C.; Duncan D. S.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime
J. Appl. Phys. 86, 4043 (1999)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
269.
1999

Butov L. V.; Shashkin A. A.; Campman K. L.; Dolgopolov V. T.; Gossard A. C.

Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa1-x;As coupled quantum wells
Phys. Rev. B 60, 8753 (1999)
Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow district, Russia;
270.
1999

Salis G.; Maranowski K.; Bächtold W.; Homan O. J.; Ensslin K.; Heinzel T.; Gossard A. C.

Mode spectroscopy and level coupling in ballistic electron waveguides
Phys. Rev. B 60, 7756 (1999)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
271.
1999

Harris J. G. E.; Awschalom D. D.; Matsukura F.; Ohno H.; Maranowski K. D.; Gossard A. C.

Integrated micromechanical cantilever magnetometry of Ga1-x;MnxAs
Appl. Phys. Lett. 75, 1140 (1999)
Department of Physics, University of California, Santa Barbara, California 93106;
272.
1999

Adourian A. S.; Livermore C.; Westervelt R. M.; Campman K. L.; Gossard A. C.

Evolution of Coulomb blockade spectra in parallel coupled quantum dots
Appl. Phys. Lett. 75, 424 (1999)
Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138;
273.
1999

Ulrich J.; Zobl R.; Unterrainer K.; Strasser G.; Gornik E.; Maranowski K. D.; Gossard A. C.

Temperature dependence of far-infrared electroluminescence in parabolic quantum wells
Appl. Phys. Lett. 74, 3158 (1999)
Institut für Festkörperelektronik, Technische Universität Wien, A-1040 Wien, Austria;
274.
1999

Dolgopolov V. T.; Shashkin A. A.; Deviatov E. V.; Hastreiter F.; Hartung M.; Wixforth A.; Campman K. L.; Gossard A. C.

Electron subbands in a double quantum well in a quantizing magnetic field
Phys. Rev. B 59, 13235 (1999)
Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia
275.
1999

Matsuura Shuji; Blake Geoffrey A.; Wyss Rolf A.; Pearson J. C.; Kadow Christoph; Jackson Andrew W.; Gossard Arthur C.

A traveling-wave THz photomixer based on angle-tuned phase matching
Appl. Phys. Lett. 74, 2872 (1999)
Division of Geological and Planetary Sciences, California Institute of Technology, Pasadena, California 91125;
276.
1999

Jackson A. W.; Ibbetson J. P.; Gossard A. C.; Mishra U. K.

Reduced thermal conductivity in low-temperature-grown GaAs
Appl. Phys. Lett. 74, 2325 (1999)
Materials Department, University of California, Santa Barbara, California 93106;
277.
1999

Livermore C.; Duncan D. S.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

Conductance oscillations in tunnel-coupled quantum dots in the quantum Hall regime
Phys. Rev. B 59, 10744 (1999)
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
278.
1999

Song Yi-Qiao; Goodson Boyd M.; Maranowski K.; Gossard A. C.

Reduction of Spin Polarization near Landau Filling Factor ν = 3 ; in GaAs/AlGaAs Quantum Wells
Phys. Rev. Lett. 82, 2768 (1999)
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Chemistry, University of California, Berkeley, California 94720
279.
1999

Hummel Rolf E.; Gossard Arthur C.

Understanding Materials Science: History, Properties, Applications
Phys. Today 52, 88 (1999)
280.
1999

Heremans J. J.; von Molnár S.; Awschalom D. D.; Gossard A. C.

Ballistic electron focusing by elliptic reflecting barriers
Appl. Phys. Lett. 74, 1281 (1999)
MARTECH, Florida State University, Tallahassee, Florida 32306-4000;
281.
1999

Salis G.; Maranowski K.; Ensslin K.; Ihn T.; Heinzel T.; Wirth P.; Gossard A. C.

Variation of elastic scattering across a quantum well
Phys. Rev. B 59, R5304 (1999)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
282.
1999

Duncan David S.; Livermore Carol; Westervelt Robert M.; Maranowski Kevin D.; Gossard Arthur C.

Direct measurement of the destruction of charge quantization in a single-electron box
Appl. Phys. Lett. 74, 1045 (1999)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138;
283.
1999

Butov L. V.; Imamoglu A.; Campman K. L.; Mintsev A. V.; Gossard A. C.

Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-x;As coupled quantum wells
Phys. Rev. B 59, 1625 (1999)
Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia;
284.
1998

Okamura H.; Heiman D.; Sundaram M.; Gossard A. C.

Inhibited recombination of charged magnetoexcitons
Phys. Rev. B 58, R15985 (1998)
Physics Department, Kobe University, Kobe 657-8501, Japan;
285.
1998

Adourian A. S.; Yang Scott; Westervelt R. M.; Campman K. L.; Gossard A. C.

Josephson junction oscillators as probes of electronic nanostructures
J. Appl. Phys. 84, 5808 (1998)
Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
286.
1998

Cho H.; Bichler M.; Gossard A. C.; Campman K. L.; Kang W.; Young J. B.; Wegscheider W.

Hysteresis and Spin Transitions in the Fractional Quantum Hall Effect
Phys. Rev. Lett. 81, 2522 (1998)
287.
1998

Vieira G. S.; Allen S. J.; Guimarães P. S. S.; Campman K. L.; Gossard A. C.

Resonantly enhanced photon-assisted tunneling in a multiple-quantum-well superlattice
Phys. Rev. B 58, 7136 (1998)
Center for Terahertz Science & Technology, University of California, Santa Barbara, California 93106;
288.
1998

Beck R. G.; Eriksson M. A.; Topinka M. A.; Westervelt R. M.; Maranowski K. D.; Gossard A. C.

GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy
Appl. Phys. Lett. 73, 1149 (1998)
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138;
289.
1998

Luyken R. J.; Lorke A.; Song A. M.; Streibl M.; Kotthaus J. P.; Kadow C.; English J. H.; Gossard A. C.

Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors
Appl. Phys. Lett. 73, 1110 (1998)
Sektion Physik, LMU, Geschw.-Scholl Pl. 1, D-80539 München, Germany;
290.
1998

Holtz P. O.; Ferreira A. C.; Sernelius B. E.; Buyanov A.; Monemar B.; Mauritz O.; Ekenberg U.; Sundaram M.; Campman K.; Merz J. L.; Gossard A. C.

Many-body effects in highly acceptor-doped GaAs/AlxGa1-x;As quantum wells
Phys. Rev. B 58, 4624 (1998)
Department of Physics and Measurements Technology, Linköping University, S-581 83 Linköping, Sweden;
291.
1998

Salis G.; Ruhstaller B.; Ensslin K.; Campman K.; Maranowski K.; Gossard A. C.

Subband densities in quantum wells under in-plane magnetic fields
Phys. Rev. B 58, 1436 (1998)
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;
292.
1998

Huibers A. G.; Switkes M.; Marcus C. M.; Campman K.; Gossard A. C.

Dephasing in Open Quantum Dots
Phys. Rev. Lett. 81, 200 (1998)
Department of Physics, Stanford University, Stanford, California 94305
293.
1998

Patel S. R.; Cronenwett S. M.; Stewart D. R.; Huibers A. G.; Marcus C. M.; Duruöz C. I.; Harris J. S.; Campman K.; Gossard A. C.

Statistics of Coulomb Blockade Peak Spacings
Phys. Rev. Lett. 80, 4522 (1998)
Department of Physics, Stanford University, Stanford, California 94305
294.
1998

Denk Petra; Campman Kenneth L.; Wixforth Achim; Streibl Martin; Hartung Martin; Gossard Arthur C.

Magnetic-field-induced charge localization in a high-mobility semiconductor superlattice
Phys. Rev. B 57, 13094 (1998)
Sektion Physik der LMU, Geschwister Scholl Platz 1, D-80539 München, Germany;
295.
1998

Pond K.; Nosho B. Z.; Stuber H. R.; Gossard A. C.; Weinberg W. H.

A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy
Rev. Sci. Instrum. 69, 1403 (1998)
University of California, Santa Barbara, California 93106;
296.
1998

Switkes M.; Huibers A. G.; Marcus C. M.; Campman K.; Gossard A. C.

High bias transport and magnetometer design in open quantum dots
Appl. Phys. Lett. 72, 471 (1998)
Department of Physics, Stanford University, Stanford, California 94305;
297.
1998

Katine J. A.; Berry M. J.; Westervelt R. M.; Gossard A. C.

Determination of the electronic phase coherence time in one-dimensional channels
Phys. Rev. B 57, 1698 (1998)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
298.
1997

Salis G.; Graf B.; Ensslin K.; Campman K.; Maranowski K.; Gossard A. C.

Wave Function Spectroscopy in Quantum Wells with Tunable Electron Density
Phys. Rev. Lett. 79, 5106 (1997)
299.
1997

Deviatov E. V.; Dolgopolov V. T.; Williams F. I. B.; Jager B.; Lorke A.; Kotthaus J. P.; Gossard A. C.

Excitation of edge magnetoplasmons in a two-dimensional electron gas by inductive coupling
Appl. Phys. Lett. 71, 3655 (1997)
Institute of Solid State Physics, Chernogolovka, 142432 Moscow District, Russia
300.
1997

Katine J. A.; Eriksson M. A.; Adourian A. S.; Westervelt R. M.; Edwards J. D.; Lupu-Sax A.; Heller E. J.; Campman K. L.; Gossard A. C.

Point Contact Conductance of an Open Resonator
Phys. Rev. Lett. 79, 4806 (1997)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
301.
1997

Kang W.; Young J. B.; Hannahs S. T.; Palm E.; Campman K. L.; Gossard A. C.

Evidence for a spin transition in the ν=;25 fractional quantum Hall effect
Phys. Rev. B 56, R12776 (1997)
James Franck Institute and Department of Physics, University of Chicago, Chicago, Illinois 60637
302.
1997

Hu Junmin; Beck R. G.; Deng Tao; Westervelt R. M.; Maranowski K. D.; Gossard A. C.; Whitesides George M.

Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors
Appl. Phys. Lett. 71, 2020 (1997)
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138
303.
1997

Cronenwett S. M.; Patel S. R.; Marcus C. M.; Campman K.; Gossard A. C.

Mesoscopic Fluctuations of Elastic Cotunneling in Coulomb Blockaded Quantum Dots
Phys. Rev. Lett. 79, 2312 (1997)
Department of Physics, Stanford University, Stanford, California 94305-4060
304.
1997

Crouch C. H.; Livermore C.; Westervelt R. M.; Campman K. L.; Gossard A. C.

Evolution of the Coulomb gap in tunnel-coupled quantum dots
Appl. Phys. Lett. 71, 817 (1997)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
305.
1997

Černe J.; Kono J.; Inoshita T.; Sherwin M.; Sundaram M.; Gossard A. C.

Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells
Appl. Phys. Lett. 70, 3543 (1997)
Department of Physics and Center for Terahertz Science and Technology, University of California, Santa Barbara, California 93106
306.
1997

Schmidt H.; Campman K. L.; Gossard A. C.; Imamoǧlu A.

Tunneling induced transparency: Fano interference in intersubband transitions
Appl. Phys. Lett. 70, 3455 (1997)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
307.
1997

Haubrich A. G. C.; Wharam D. A.; Kriegelstein H.; Manus S.; Lorke A.; Kotthaus J. P.; Gossard A. C.

Parallel quantum-point-contacts as high-frequency-mixers
Appl. Phys. Lett. 70, 3251 (1997)
Sektion Physik der LMU, Geschwister-Scholl-Platz 1, D-80539 München, Germany;
308.
1997

Rimberg A. J.; Ho T. R.; Kurdak Ç.; Clarke John; Campman K. L.; Gossard A. C.

Dissipation-Driven Superconductor-Insulator Transition in a Two-Dimensional Josephson-Junction Array
Phys. Rev. Lett. 78, 2632 (1997)
Department of Physics, University of California, Berkeley, California 94720
309.
1997

Wendler L.; Kraft T.; Hartung M.; Berger A.; Wixforth A.; Sundaram M.; English J. H.; Gossard A. C.

Optical response of grating-coupler-induced intersubband resonances: The role of Wood’s anomalies
Phys. Rev. B 55, 2303 (1997)
Anna-Siemsen-Straβe 66, D-07745 Jena, Germany;
310.
1996

Ferreira A. C.; Holtz P. O.; Monemar B.; Sundaram M.; Campman K.; Merz J. L.; Gossard A. C.

Excitons bound at interacting acceptors in AlxGa1-;xAs/GaAs quantum wells
Phys. Rev. B 54, 16994 (1996)
Department of Physics and Measurements Technology, Linköping University, S‐581 83 Linköping, Sweden;
311.
1996

Ferreira A. C.; Merz J. L.; Campman K.; Sundaram M.; Ekenberg U.; Mauritz O.; Monemar B.; Buyanova I.; Sernelius B. E.; Holtz P. O.; Gossard A. C.

Exciton properties in p‐type GaAs/Al;xGa1-;xAs quantum wells in the high doping regime
Phys. Rev. B 54, 16989 (1996)
Department of Physics and Measurements Technology, Linköping University, S‐581 83 Linköping, Sweden;
312.
1996

Lee Z. K.; Heiman D.; Wang H.; Fonstad C. G.; Sundaram M.; Gossard A. C.

Faraday–Stark optoelectronic effect
Appl. Phys. Lett. 69, 3731 (1996)
Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
313.
1996

Maranowski K. D.; Gossard A. C.; Unterrainer K.; Gornik E.

Far‐infrared emission from parabolically graded quantum wells
Appl. Phys. Lett. 69, 3522 (1996)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
314.
1996

Gider S.; Shi J.; Awschalom D. D.; Hopkins P. F.; Campman K. L.; Gossard A. C.; Kent A. D.; von Molnár S.

Imaging and magnetometry of switching in nanometer‐scale iron particles
Appl. Phys. Lett. 69, 3269 (1996)
Department of Physics, University of California, Santa Barbara, California 93106
315.
1996

Zeuner S.; Allen S. J.; Maranowski K. D.; Gossard A. C.

Photon‐assisted tunneling in GaAs/AlGaAs superlattices up to room temperature
Appl. Phys. Lett. 69, 2689 (1996)
Center for Free‐electron Laser Studies, University of California, Santa Barbara, California 93106;
316.
1996

Campman K. L.; Schmidt H.; Imamoglu A.; Gossard A. C.

Interface roughness and alloy‐disorder scattering contributions to intersubband transition linewidths
Appl. Phys. Lett. 69, 2554 (1996)
Electrical and Computer Engineering Department, UCSB, Santa Barbara, California 93106
317.
1996

Yuh E. L.; Gwinn E. G.; Pinsukanjana P. R.; Schaich W. L.; Campman K. L.; Hopkins P. F.; Gossard A. C.

Effects of nonlocal response and level quantization on electronic excitations of a bimetallic jellium film in an AlxGa1-;xAs heterostructure
Phys. Rev. B 54, 11467 (1996)
Physics Department, University of California, Santa Barbara, Santa Barbara, California 93106
318.
1996

Harris J. G. E.; Awschalom D. D.; Maranowski K. D.; Gossard A. C.

Fabrication and characterization of 100‐nm‐thick GaAs cantilevers
Rev. Sci. Instrum. 67, 3591 (1996)
Department of Physics, University of California, Santa Barbara, California 93106
319.
1996

Nishi Kenichi; Mirin Richard; Leonard Devin; Medeiros-Ribeiro Gilberto; Petroff Pierre M.; Gossard Arthur C.

Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311);B GaAs
J. Appl. Phys. 80, 3466 (1996)
Opto‐Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan and;
320.
1996

Černe J.; Gossard A. C.; Kono J.; Sherwin M. S.; Sundaram M.; Bauer G. E. W.

Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells
Phys. Rev. Lett. 77, 1131 (1996)
Department of Physics and Center for Free‐Electron Laser Studies, University of California, Santa Barbara, California 93106;;
321.
1996

Eriksson M. A.; Beck R. G.; Topinka M.; Katine J. A.; Westervelt R. M.; Campman K. L.; Gossard A. C.

Cryogenic scanning probe characterization of semiconductor nanostructures
Appl. Phys. Lett. 69, 671 (1996)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
322.
1996

Johnson J. L.; Samoska L. A.; Gossard A. C.; Merz J. L.; Jack M. D.; Chapman G. R.; Baumgratz B. A.; Kosai K.; Johnson S. M.

Suppression of the coherent charge oscillations in coupled quantum wells by an in‐plane magnetic field
J. Appl. Phys. 80, 924 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
323.
1996

Johnson J. L.; Samoska L. A.; Gossard A. C.; Merz J. L.; Jack M. D.; Chapman G. R.; Baumgratz B. A.; Kosai K.; Johnson S. M.

Electrical and optical properties of infrared photodiodes using the InAs/Ga1-;xInxSb superlattice in heterojunctions with GaSb
J. Appl. Phys. 80, 1116 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
324.
1996

Beck R. G.; Eriksson M. A.; Westervelt R. M.; Campman K. L.; Gossard A. C.

Strain‐sensing cryogenic field‐effect transistor for integrated strain detection in GaAs/AlGaAs microelectromechanical systems
Appl. Phys. Lett. 68, 3763 (1996)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
325.
1996

Heyman J. N.; Unterrainer K.; Craig K.; Williams J.; Sherwin M. S.; Campman K.; Hopkins P. F.; Gossard A. C.; Murdin B. N.; Langerak C. J. G. M.

Far‐infrared pump‐probe measurements of the intersubband lifetime in an AlGaAs/GaAs coupled‐quantum well
Appl. Phys. Lett. 68, 3019 (1996)
Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105
326.
1996

Imamoglu Atac; Campman Kenneth; Schmidt Hans-Werner; Ram Rajeev J.; Gossard Arthur C.

Lasers without inversion in quantum well intersubband transitions
Proc. SPIE Int. Soc. Opt. Eng. 2798, 205 (1996)
Univ. of California/Santa Barbara (USA)
327.
1996

Pinsukanjana Paul; Jackson Andrew; Tofte Jan; Maranowski Kevin; Campbell Scott; English John; Chalmers Scott; Coldren Larry; Gossard Arthur

Real‐time simultaneous optical‐based flux monitoring of Al, Ga, and In using atomic absorption for molecular beam epitaxy
J. Vac. Sci. Technol. B 14, 2147 (1996)
ECE Department, University of California, Santa Barbara, Santa Barbara, California 93106
328.
1996

Cheong Hyeonsik M.; Burnett J. H.; Paul W.; Hopkins P. F.; Campman K.; Gossard A. C.

Hydrostatic‐pressure coefficient of the direct band‐gap energy of Al;xGa1-;xAs for x=0–0.35
Phys. Rev. B 53, 10916 (1996)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
329.
1996

Craig K.; Galdrikian B.; Heyman J. N.; Hopkins P. F.; Campman K.; Sherwin M. S.; Williams J. B.; Markelz A. G.; Gossard A. C.

Undressing a collective intersubband excitation in a quantum well
Phys. Rev. Lett. 76, 2382 (1996)
Department of Physics and Quantum Institute, University of California at Santa Barbara, Santa Barbara, California 93106;
330.
1996

Mancoff F. B.; Campman K.; Marcus C. M.; Zielinski L. J.; Gossard A. C.

Shubnikov–de Haas oscillations in a two‐dimensional electron gas in a spatially random magnetic field
Phys. Rev. B 53, R7599 (1996)
Department of Physics, Stanford University, Stanford, California 94305‐4060;
331.
1996

Folk J. A.; Patel S. R.; Godijn S. F.; Huibers A. G.; Cronenwett S. M.; Marcus C. M.; Campman K.; Gossard A. C.

Statistics and parametric correlations of Coulomb blockade peak fluctuations in quantum dots
Phys. Rev. Lett. 76, 1699 (1996)
Department of Physics, Stanford University, Stanford, California 94305‐4060;
332.
1996

Buyanova I. A.; Ferreira A. C.; Holtz P. O.; Monemar B.; Campman K.; Merz J. L.; Gossard A. C.

Effect of hydrogen passivation on Be‐doped AlGaAs/GaAs quantum wells
Appl. Phys. Lett. 68, 1365 (1996)
Department of Physics and Measurement Technology, Linköping University, Linköping S‐581 83, Sweden;
333.
1996

Asmar N. G.; Černe J.; Markelz A. G.; Gwinn E. G.; Sherwin M. S.; Campman K. L.; Gossard A. C.

Temperature of quasi‐two‐dimensional electron gases under steady‐state terahertz drive
Appl. Phys. Lett. 68, 829 (1996)
Department of Physics and Center for Free Electron Laser Studies, University of California, Santa Barbara, California 93106
334.
1996

Zeuner S.; Keay B. J.; Allen S. J.; Maranowski K. D.; Gossard A. C.; Bhattacharya U.; Rodwell M. J. W.

Transition from classical to quantum response in semiconductor superlattices at THz frequncies
Phys. Rev. B 53, R1717 (1996)
Center for Free‐electron Laser Studies, University of California at Santa Barbara, Santa Barbara, California 93106;
335.
1996

Waugh F. R.; Campman K. L.; Westervelt R. M.; Mar D. J.; Livermore C.; Crouch C. H.; Berry M. J.; Gossard A. C.

Measuring interactions between tunnel‐coupled quantum dots
Phys. Rev. B 53, 1413 (1996)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
336.
1996

Buyanov A. V.; Ferreira A. C.; Merz J. L.; Campman K.; Sundaram M.; Monemar B.; Sernelius B.; Holtz P. O.; Buyanova I. A.; Söderström E.; Gossard A. C.

Thermally activated intersubband and hopping transport in center‐doped ;p‐type GaAs/Al;xGa1-;xAs quantum wells
Phys. Rev. B 53, 1357 (1996)
Department of Physics and Measurements Technology, Linköping University, S‐581 83 Linköping, Sweden;
337.
1996

Lorke A.; Kotthaus J. P.; English J. H.; Gossard A. C.

Local far‐infrared spectroscopy of edge states in the quantum Hall regime
Phys. Rev. B 53, 1054 (1996)
Sektion Physik, Ludwig‐Maximilians‐Universität München, Geschwister‐Scholl‐Platz 1, 80539 München, Germany;
338.
1995

Mirin R. P.; Ibbetson J. P.; Nishi K.; Gossard A. C.; Bowers J. E.

1.3 μm photoluminescence from InGaAs quantum dots on GaAs
Appl. Phys. Lett. 67, 3795 (1995)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
339.
1995

Keay B. J.; Zeuner S.; Allen S. J.; Maranowski K. D.; Gossard A. C.; Bhattacharya U.; Rodwell M. J. W.

Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices
Phys. Rev. Lett. 75, 4102 (1995)
Center for Free‐Electron Laser Studies, UCSB, Santa Barbara, California 93106;
340.
1995

Keay B. J.; Allen S. J.; Galán J.; Kaminski J. P.; Campman K. L.; Gossard A. C.; Bhattacharya U.; Rodwell M. J. W.

Photon‐assisted electric field domains and multiphoton‐assisted tunneling in semiconductor superlattices
Phys. Rev. Lett. 75, 4098 (1995)
Center for Free‐Electron Laser Studies, University of California, Santa Barbara, California 93106;
341.
1995

Sundaram M.; Allen S. J.; Geller M. R.; Campman K. L.; Gossard A. C.

Plasmons in a superlattice in a parabolic quantum well
Appl. Phys. Lett. 67, 3165 (1995)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
342.
1995

Drexler H.; Scott J. S.; Allen S. J.; Campman K. L.; Gossard A. C.

Photon‐assisted tunneling in a resonant tunneling diode; Stimulated emission and absorption in the THz range
Appl. Phys. Lett. 67, 2816 (1995)
Center for Free‐Electron Laser Studies, University of California, Santa Barbara, California 93106;
343.
1995

Waugh F. R.; Berry M. J.; Mar D. J.; Westervelt R. M.; Campman K. L.; Gossard A. C.

Single‐electron charging in double and triple quantum dots with tunable coupling
Phys. Rev. Lett. 75, 705 (1995)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
344.
1995

Clarke R. M.; Chan I. H.; Marcus C. M.; Duruöz C. I.; Harris J. S.; Campman K.; Gossard A. C.

Temperature dependence of phase breaking in ballistic quantum dots
Phys. Rev. B 52, 2656 (1995)
Department of Physics, Stanford University, Stanford, California 94305
345.
1995

Maranowski K. D.; Ibbetson J. P.; Campman K. L.; Gossard A. C.

Interface between low‐temperature grown GaAs and undoped GaAs as a conduction barrier for back gates
Appl. Phys. Lett. 66, 3459 (1995)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
346.
1995

Asmar N. G.; Markelz A. G.; Gwinn E. G.; Černe J.; Sherwin M. S.; Campman K. L.; Hopkins P. F.; Gossard A. C.

Resonant‐energy relaxation of terahertz‐driven two‐dimensional electron gases
Phys. Rev. B 51, 18041 (1995)
Department of Physics, University of California, Santa Barbara, California 93106
347.
1995

Mancoff F. B.; Clarke R. M.; Marcus C. M.; Campman K.; Zhang S. C.; Gossard A. C.

Magnetotransport of a two‐dimensional electron gas in a spatially random magnetic field
Phys. Rev. B 51, 13269 (1995)
Department of Physics, Stanford University, Stanford, California 94305
348.
1995

Harris C. I.; Monemar B.; Kalt H.; Holtz P. O.; Sundaram M.; Merz J. L.; Gossard A. C.

Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 51, 13221 (1995)
Department of Physics and Measurement Technology, University of Linköping, S‐58183 Linköping, Sweden;
349.
1995

Chan I. H.; Clarke R. M.; Marcus C. M.; Campman K.; Gossard A. C.

Ballistic conductance fluctuations in shape space
Phys. Rev. Lett. 74, 3876 (1995)
Department of Physics, Stanford University, Stanford, California 94305‐4060;
350.
1995

Hu S. Y.; Corzine S. W.; Chuang Z. M.; Law K.-K.; Young D. B.; Gossard A. C.; Coldren L. A.; Merz J. L.

Temperature‐dependent threshold and modulation characteristics in InGaAs/GaAs quantum‐well ridge‐waveguide lasers
Appl. Phys. Lett. 66, 2040 (1995)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
351.
1995

Heyman J. N.; Unterrainer K.; Craig K.; Galdrikian B.; Sherwin M. S.; Campman K.; Hopkins P. F.; Gossard A. C.

Temperature and Intensity Dependence of Intersubband Relaxation Rates from Photovoltage and Absorption
Phys. Rev. Lett. 74, 2682 (1995)
Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105
352.
1995

Lorke Axel; English John H.; Gossard Arthur C.; Petroff Pierre M.

Tapered GaAs quantum wells and selectively contactable two‐dimensional electron gases grown by shadow masked molecular‐beam epitaxy
J. Appl. Phys. 77, 3578 (1995)
Materials Department and QUEST, University of California, Santa Barbara, California 93106
353.
1995

Černe J.; Markelz A. G.; Sherwin M. S.; Allen S. J.; Sundaram M.; Gossard A. C.; van Son P. C.; Bimberg D.

Quenching of excitonic quantum‐well photoluminescence by intense far‐infrared radiation; Free‐carrier heating
Phys. Rev. B 51, 5253 (1995)
Department of Physics and Center for Free‐Electron Laser Studies, University of California, Santa Barbara, California 93106;
354.
1994

Harris C. I.; Monemar B.; Kalt H.; Merz J. L.; Sundaram M.; Holtz P. O.; Gossard A. C.

Exciton dynamics in GaAs/AlxGa1-;xAs doped quantum wells
Phys. Rev. B 50, 18367 (1994)
Department of Physics and Measurement Technology,University of Linköping, Linköping S‐58183, Sweden;
355.
1994

Berry M. J.; Katine J. A.; Westervelt R. M.; Gossard A. C.

Influence of shape on electron transport in ballistic quantum dots
Phys. Rev. B 50, 17721 (1994)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
356.
1994

Rocke C.; Manus S.; Wixforth A.; Sundaram M.; English J. H.; Gossard A. C.

Voltage tunable acoustoelectric interaction in GaAs/AlGaAs heterojunctions
Appl. Phys. Lett. 65, 2422 (1994)
Sektion Physik der LMU, Geschwister Scholl Platz 1, D‐80539 München, Germany;
357.
1994

Peters M. G.; Thibeault B. J.; Young D. B.; Gossard A. C.; Coldren L. A.

Growth of beryllium doped AlxGa1-;xAs/GaAs mirrors for vertical‐cavity surface‐emitting lasers
J. Vac. Sci. Technol. B 12, 3075 (1994)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
358.
1994

Mirin Richard P.; Ibbetson James P.; Mishra Umesh K.; Gossard Arthur C.

Low temperature limits to molecular beam epitaxy of GaAs
Appl. Phys. Lett. 65, 2335 (1994)
Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106
359.
1994

Sundaram M.; Allen S. J.; Geller M. R.; Hopkins P. F.; Campman K. L.; Gossard A. C.

Infrared absorption of holes in a parabolic quantum well
Appl. Phys. Lett. 65, 2226 (1994)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
360.
1994

Hu S. Y.; Corzine S. W.; Law K.-K.; Young D. B.; Gossard A. C.; Coldren L. A.; Merz J. L.

Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers
J. Appl. Phys. 76, 4479 (1994)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106
361.
1994

Berry M. J.; Westervelt R. M.; Baskey J. H.; Gossard A. C.

Coherent electronic backscattering in ballistic microstructures
Phys. Rev. B 50, 8857 (1994)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
362.
1994

Zhao Q. X.; Monemar B.; Holtz P. O.; Lundström T.; Sundaram M.; Merz J. L.; Gossard A. C.

Magnetic‐field‐induced localization effects on radiative recombination in GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 50, 7514 (1994)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
363.
1994

Hu S. Y.; Young D. B.; Corzine S. W.; Gossard A. C.; Coldren L. A.

High‐efficiency and low‐threshold InGaAs/AlGaAs quantum‐well lasers
J. Appl. Phys. 76, 3932 (1994)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
364.
1994

Holtz P. O.; Zhao Q. X.; Ferreira A. C.; Monemar B.; Pasquarello Alfredo; Sundaram M.; Merz J. L.; Gossard A. C.

Magneto‐optical studies of acceptors confined in GaAs/Al;xGa1-;xAs quantum wells
Phys. Rev. B 50, 4901 (1994)
Departments of Physics and Mesaurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
365.
1994

Holtz P. O.; Zhao Q. X.; Monemar B.; Sundaram M.; Merz J. L.; Gossard A. C.

Shake‐up intersubband processes in quantum‐well luminescence
Phys. Rev. B 50, 4439 (1994)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
366.
1994

Ferreira A. C.; Holtz P. O.; Monemar B.; Sundaram M.; Merz J. L.; Gossard A. C.

Photoconductivity investigation of the excitonic Auger recombination in GaAs/AlGaAs quantum wells
Appl. Phys. Lett. 65, 720 (1994)
Department of Physics and Measurements Technology Linköping University, Linköping S‐581 83, Sweden;
367.
1994

Sundaram M.; Allen S. J.; Gossard A. C.

Low‐temperature carrier distributions in wide quantum wells of different shapes from capacitance‐voltage measurements
J. Appl. Phys. 76, 1003 (1994)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106
368.
1994

Pond K.; Lorke A.; Ibbetson J.; Bressler-Hill V.; Maboudian R.; Weinberg W. H.; Gossard A. C.; Petroff P. M.

Step bunching and step equalization on vicinal GaAs(001) surfaces
J. Vac. Sci. Technol. B 12, 2689 (1994)
Materials Department, University of California, Santa Barbara, California 93106
369.
1994

Liao L. B.; Heiman D.; Hopkins P. F.; Gossard A. C.

Inelastic‐light‐scattering study of magnetoplasma modes in a wide parabolic quantum well
Phys. Rev. B 49, 16825 (1994)
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
370.
1994

Zhao Q. X.; Merz J. L.; Sundaram M.; Ferreira A. C.; Monemar B.; Pasquarello A.; Holtz P. O.; Gossard A. C.

Magnetic properties of the S‐like bound hole states in GaAs/Al;xGa1-;xAs quantum wells
Phys. Rev. B 49, 10794 (1994)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
371.
1994

Cheong Hyeonsik M.; Burnett J. H.; Paul W.; Hopkins P. F.; Gossard A. C.

Hydrostatic‐pressure dependence of band offsets in GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 49, 10444 (1994)
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
372.
1994

Heyman J. N.; Craig K.; Galdrikian B.; Sherwin M. S.; Campman K.; Hopkins P. F.; Fafard S.; Gossard A. C.

Resonant harmonic generation and dynamic screening in a double quantum well
Phys. Rev. Lett. 72, 2183 (1994)
Quantum Institute, University of California at Santa Barbara, Santa Barbara, California 93106
373.
1994

Ibbetson J. P.; Mirin R. P.; Mishra U. K.; Gossard A. C.

Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperatures
J. Vac. Sci. Technol. B 12, 1050 (1994)
Materials Department, University of California, Santa Barbara, California 93106
374.
1994

Hopkins P. F.; Campman K. L.; Bellomi G.; Gossard A. C.; Sundaram M.; Yuh E. L.; Gwinn E. G.

Logarithmically graded quantum well far‐infrared modulator
Appl. Phys. Lett. 64, 348 (1994)
Materials Department and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
375.
1993

Peters M. G.; Thibeault B. J.; Young D. B.; Scott J. W.; Peters F. H.; Gossard A. C.; Coldren L. A.

Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers
Appl. Phys. Lett. 63, 3411 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
376.
1993

Hu S. Y.; Miller M. S.; Young D. B.; Yi J. C.; Leonard D.; Gossard A. C.; Petroff P. M.; Coldren L. A.; Dagli N.

Optical gain anisotropy in serpentine superlattice nanowire‐array lasers
Appl. Phys. Lett. 63, 2015 (1993)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93107
377.
1993

Yuh E. L.; Gwinn E. G.; Pinsukanjana P. R.; Schaich W. L.; Hopkins P. F.; Gossard A. C.

Onset of 3D collective response in bimetallic jellium films: Surface and mode sensitivity
Phys. Rev. Lett. 71, 2126 (1993)
Department of Physics, University of California at Santa Barbara, Santa Barbara, California 93106
378.
1993

Holtz P. O.; Zhao Q. X.; Ferreira A. C.; Monemar B.; Sundaram M.; Merz J. L.; Gossard A. C.

Excited states of shallow acceptors confined in GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 48, 8872 (1993)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
379.
1993

Burnett J. H.; Cheong H. M.; Paul W.; Hopkins P. F.; Gossard A. C.

Photoluminescence excitation spectroscopy of Be‐remotely‐doped wide parabolic GaAs/Al;xGa1-;xAs quantum wells
Phys. Rev. B 48, 7940 (1993)
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
380.
1993

Burnett J. H.; Cheong H. M.; Westervelt R. M.; Paul W.; Hopkins P. F.; Sundaram M.; Gossard A. C.

Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 48, 4524 (1993)
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
381.
1993

Garini Y.; Ehrenfreund E.; Cohen E.; Ron Arza; Law K.-K.; Merz J. L.; Gossard A. C.

Optically induced intersubband absorption in the presence of a two‐dimensional electron gas in quantum wells
Phys. Rev. B 48, 4456 (1993)
Department of Physics, Solid State Institute, Technion‐Israel Institute of Technology, Haifa 32000, Israel;
382.
1993

Marcus C. M.; Westervelt R. M.; Hopkins P. F.; Gossard A. C.

Phase breaking in ballistic quantum dots: Experiment and analysis based on chaotic scattering
Phys. Rev. B 48, 2460 (1993)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
383.
1993

Bewley W. W.; Felix C. L.; Plombon J. J.; Sherwin M. S.; Sundaram M.; Hopkins P. F.; Gossard A. C.

Far‐infrared second‐harmonic generation in GaAs/Al;xGa1-;xAs heterostructures; Perturbative and nonperturbative response
Phys. Rev. B 48, 2376 (1993)
Department of Physics and Center for Free‐Electron Laser Studies, University of California(enSanta Barbara, Santa Barbara, California 93106;
384.
1993

Markelz Andrea G.; Gwinn Elisabeth G.; Sherwin Mark S.; Heyman James N.; Nguyen Chen; Kroemer Herbert; Hopkins P. F.; Gossard Arthur C.

Far-infrared harmonic generation from semiconductor heterostructures
Proc. SPIE Int. Soc. Opt. Eng. 1854, 48 (1993)
Univ. of California/Santa Barbara (USA)
385.
1993

Sherwin Mark S.; Asmar N.; Bewley William W.; Craig Keith; Felix C. L.; Galdrikian B.; Gwinn Elisabeth G.; Sundaram Mani; Hopkins P. F.; Gossard Arthur C.; Markelz Andrea G.; Birnir Bjorn

Far-infrared nonlinear response of electrons in semiconductor nanostructures
Proc. SPIE Int. Soc. Opt. Eng. 1854, 36 (1993)
Univ. of California/Santa Barbara (USA)
386.
1993

Holtz P. O.; Zhao Q. X.; Monemar B.; Sundaram M.; Merz J. L.; Gossard A. C.

Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-;xAs quantum well
Phys. Rev. B 47, 15675 (1993)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
387.
1993

Guimarães P. S. S.; Keay Brian J.; Kaminski Jann P.; Allen S. J.; Hopkins P. F.; Gossard A. C.; Florez L. T.; Harbison J. P.

Photon‐mediated sequential resonant tunneling in intense terahertz electric fields
Phys. Rev. Lett. 70, 3792 (1993)
Center for Free Electron Laser Studies, University of California–Santa Barbara, Santa Barbara, California 93106;
388.
1993

Chalmers S. A.; Tsao J. Y.; Gossard A. C.

Terrace width evolution during step‐flow growth with multiterrace adatom migration
J. Appl. Phys. 73, 7351 (1993)
Sandia National Laboratories, Division 1311, Albuquerque, New Mexico 87185
389.
1993

Ibbetson J. P.; Speck J. S.; Gossard A. C.; Mishra U. K.

Observation of arsenic precipitates in GaInAs grown at low temperature on InP
Appl. Phys. Lett. 62, 2209 (1993)
University of California, Santa Barbara, California 93106
390.
1993

Holtz P. O.; Monemar B.; Sundaram M.; Merz J. L.; Gossard A. C.

Excited 2s state of a donor confined in a GaAs/AlxGa1-;xAs quantum well
Phys. Rev. B 47, 10596 (1993)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
391.
1993

Tarsa E. J.; De Graef M.; Clarke D. R.; Gossard A. C.; Speck J. S.

Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs
J. Appl. Phys. 73, 3276 (1993)
Materials Department, University of California, Santa Barbara, California 93106
392.
1993

Rimberg A. J.; Yang Scott; Dempsey Jed; Baskey J. H.; Westervelt R. M.; Sundaram M.; Gossard A. C.

Capacitive detection of subband structure in the electron gas in a wide parabolic GaAs/AlxGa1-;xAs quantum well
Appl. Phys. Lett. 62, 390 (1993)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
393.
1993

Ensslin K.; Wixforth A.; Sundaram M.; Hopkins P. F.; English J. H.; Gossard A. C.

Single‐particle subband spectroscopy in a parabolic quantum well via transport experiments
Phys. Rev. B 47, 1366 (1993)
Sektion Physik, Universität München, Geschwister‐Scholl Platz 1, 8000 München 22, Germany;
394.
1993

Ibbetson J. P.; Speck J. S.; Gossard A. C.; Mishra U. K.

Observation of impurity effects on the nucleation of arsenic precipitates in GaAs
Appl. Phys. Lett. 62, 169 (1993)
Materials Department and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
395.
1993

Sundaram M.; Gossard A. C.

Capacitance‐voltage profiling through graded heterojunctions; Theory and experiment
J. Appl. Phys. 73, 251 (1993)
Department of Electrical and Computer Engineering, and Materials Department, University of California, Santa Barbara, California 93106
396.
1992

Kaloudis M.; English J. H.; Sundaram M.; Wixforth A.; Ensslin K.; Gossard A. C.

Resonant coupling of collective intra‐ and intersubband excitations in a parabolically confined electron system
Phys. Rev. B 46, 12469 (1992)
Sektion Physik, Universität München, D‐8000 München 22, Germany;
397.
1992

Baskey J. H.; Rimberg A. J.; Yang Scott; Westervelt R. M.; Hopkins P. F.; Gossard A. C.

Remotely‐doped superlattices in wide parabolic GaAs/Al;xGa1-;xAs quantum wells
Appl. Phys. Lett. 61, 1573 (1992)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
398.
1992

Pinsukanjana P. R.; Gwinn E. G.; Dobson John F.; Yuh E. L.; Asmar N. G.; Sundaram M.; Gossard A. C.

Surface collective modes of non‐neutral jellium
Phys. Rev. B 46, 7284 (1992)
Department of Physics, University of California–Santa Barbara, Santa Barbara, California 93106;
399.
1992

Sela I.; Samoska L. A.; Bolognesi C. R.; Gossard A. C.; Kroemer H.

Raman scattering from interface modes in Ga1-;xInxSb/InAs superlattices
Phys. Rev. B 46, 7200 (1992)
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
400.
1992

Zhao Q. X.; Holtz P. O.; Monemar B.; Sörman E.; Chen W. M.; Hallin C.; Sundaram M.; Merz J. L.; Gossard A. C.

Optical investigation of Fermi‐edge singularities in Al;0.35Ga0.65As/GaAs heterostructures
Phys. Rev. B 46, 4352 (1992)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
401.
1992

Sundaram M.; Wixforth A.; Hopkins P. F.; Gossard A. C.

Wide electron gas with periodic density modulation
J. Appl. Phys. 72, 1460 (1992)
Department of Electrical and Computer Engineering, and Materials Department, University of California, Santa Barbara, California 93106
402.
1992

Chalmers S. A.; Tsao J. Y.; Gossard A. C.

Lateral motion of terrace width distributions during step‐flow growth
Appl. Phys. Lett. 61, 645 (1992)
Sandia National Laboratories, Division 1311, Albuquerque, New Mexico 87185
403.
1992

Marcus C. M.; Rimberg A. J.; Westervelt R. M.; Hopkins P. F.; Gossard A. C.

Conductance fluctuations and chaotic scattering in ballistic microstructures
Phys. Rev. Lett. 69, 506 (1992)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
404.
1992

Ensslin K.; Pistitsch C.; Wixforth A.; Sundaram M.; Hopkins P. F.; Gossard A. C.

Direct observation of resonant subband‐Landau‐level coupling in a transport experiment
Phys. Rev. B 45, 11407 (1992)
Sektion Physik der Universität München, Geschwister‐Scholl Platz 1, 8000 München 22, Germany;
405.
1992

Yin L.-W.; Ibbetson J. P.; Hashemi M. M.; Gossard A. C.; Mishra U. K.; Hwang Y.; Zhang T.; Kolbas R. M.

Investigation of the electronic properties of insitu annealed low‐temperature gallium arsenide grown by molecular beam epitaxy
Appl. Phys. Lett. 60, 2005 (1992)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
406.
1992

Plombon J. J.; Bewley W. W.; Felix C. L.; Sherwin M. S.; Hopkins P.; Sundaram M.; Gossard A. C.

Far‐infrared capture of electrons by ;DX centers
Appl. Phys. Lett. 60, 1972 (1992)
Department of Physics and Center for Free‐Electron Laser Studies, University of California, Santa Barbara, California 93106;
407.
1992

Quinlan S. M.; Nikroo A.; Sherwin M. S.; Sundaram M.; Gossard A. C.

Photoluminescence from AlxGa1-;xAs/GaAs quantum wells quenched by intense far‐infrared radiation
Phys. Rev. B 45, 9428 (1992)
Department of Physics, University of California, Santa Barbara, California 93106
408.
1992

Weman H.; Treacy G. M.; Hjalmarson H. P.; Law K. K.; Merz J. L.; Gossard A. C.

Impact ionization of excitons and donors in AlxGa1-;xAs/(n‐type GaAs);Si quantum wells
Phys. Rev. B 45, 6263 (1992)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
409.
1991

Walukiewicz W.; Sundaram M.; Hopkins P. F.; Gossard A. C.

Size effect in parabolic GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 44, 10909 (1991)
Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
410.
1991

Sela I.; Campbell I. H.; Laurich B. K.; Smith D. L.; Samoska L. A.; Bolognesi C. R.; Gossard A. C.; Kroemer H.

Raman scattering study of InAs/GaInSb strained layer superlattices
J. Appl. Phys. 70, 5608 (1991)
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
411.
1991

Rune G. C.; Holtz P. O.; Sundaram M.; Merz J. L.; Gossard A. C.; Monemar B.

Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1-;xAs quantum well
Phys. Rev. B 44, 4010 (1991)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
412.
1991

Campbell I. H.; Sela I.; Laurich B. K.; Smith D. L.; Bolognesi C. R.; Samoska L. A.; Gossard A. C.; Kroemer H.

Far‐infrared photoresponse of the InAs/GaInSb superlattice
Appl. Phys. Lett. 59, 846 (1991)
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
413.
1991

Chao C. P.; Hu S. Y.; Law K-K.; Young B.; Merz J. L.; Gossard A. C.

Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure
J. Appl. Phys. 69, 7892 (1991)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93107
414.
1991

Burnett J. H.; Cheong H. M.; Paul W.; Hopkins P. F.; Gwinn E. G.; Rimberg A. J.; Westervelt R. M.; Sundaram M.; Gossard A. C.

Photoluminescence excitation spectroscopy of remotely doped wide parabolic GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 43, 12033 (1991)
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
415.
1991

Chao C. P.; Hu S. Y.; Floyd P.; Law K. -K.; Merz J. L.; Gossard A. C.

Fabrication of low‐threshold InGaAs/GaAs ridge waveguide lasers by using ;in situ monitored reactive ion etching
AIP Conf. Proc. 227, 164 (1991)
Department of Electrical and Computer Engineering Univesity of California, Santa Barbara Santa Barbara, CA 93107
416.
1991

Sundaram M.; Wixforth A.; Geels R. S.; Gossard A. C.; English J. H.

A direct method to produce and measure compositional grading in AlxGa1-;xAs alloys
J. Vac. Sci. Technol. B 9, 1524 (1991)
Department of Electrical Engineering, and Materials Department, University of California, Santa Barbara, California 93106
417.
1991

Ensslin K.; English J. H.; Wixforth A.; Sundaram M.; Gossard A. C.

Suppression and recovery of quantum Hall plateaus in a parabolic quantum well
Phys. Rev. B 43, 9988 (1991)
Materials Department, University of California, Santa Barbara, Calfiornia 93106
418.
1991

Wixforth A.; Sundaram M.; Ensslin K.; English J. H.; Gossard A. C.

Dimensional resonances in wide parabolic quantum wells
Phys. Rev. B 43, 10000 (1991)
Sektion Physik, Universität München, D‐8000 München 22, Federal Republic of Germany;
419.
1991

Zhao Q. X.; Fu Y.; Holtz P. O.; Monemar B.; Bergman J. P.; Chao K. A.; Sundaram M.; Merz J. L.; Gossard A. C.

Energy‐level structure of two‐dimensional electrons confined at the Al;xGa1-;xAs/GaAs interface studied by photoluminescence excitation spectroscopy
Phys. Rev. B 43, 5035 (1991)
Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden;
420.
1991

Bergman J. P.; Zhao Q. X.; Holtz P. O.; Monemar B.; Sundaram M.; Merz J. L.; Gossard A. C.

Time‐resolved measurements of the radiative recombination in GaAs/Al;xGa1-;xAs heterostructures
Phys. Rev. B 43, 4771 (1991)
Department of Physics and Measurement Technology, Linköping University, S‐581∥83 Linköping, Sweden;
421.
1991

Bergman J. P.; Merz J. L.; Sundaram M.; Monemar B.; Holtz P. O.; Gossard A. C.

Decay measurements of free‐ and bound‐exciton recombination in doped GaAs/Al;xGa1-;xAs quantum wells
Phys. Rev. B 43, 4765 (1991)
Department of Physics and Measurement Technology, Linköping University, S‐581∥83 Linköping, Sweden;
422.
1991

Sundaram M.; Gossard A. C.; Holtz P. O.

Modulation‐doped graded structures; Growth and characterization
J. Appl. Phys. 69, 2370 (1991)
Department of Electrical and Computer Engineering, and Materials Department, University of California, Santa Barbara, California 93106
423.
1991

Coldren Larry A.; Corzine Scott W.; Geels Randall S.; Gossard Arthur C.; Law K. K.; Merz James L.; Scott Jeff W.; Simes Robert J.; Yan Ran H.

High-efficiency vertical-cavity lasers and modulators
Proc. SPIE Int. Soc. Opt. Eng. 1362, 24 (1991)
Univ. of California/Santa Barbara (USA)
424.
1990

Hopkins P. F.; Rimberg A. J.; Gwinn E. G.; Westervelt R. M.; Sundaram M.; Gossard A. C.

Low‐density high‐mobility electron gas in wide parabolic GaAs/Al;xGa1-;xAs wells
Appl. Phys. Lett. 57, 2823 (1990)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
425.
1990

Schubert E. F.; Capasso Federico; Hutchinson A. L.; Sen S.; Gossard A. C.

Observation of charge storage and intersubband relaxation in resonant tunneling via a high sensitivity capacitive technique
Appl. Phys. Lett. 57, 2820 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
426.
1990

Zou W. X.; Law K-K.; Gossard A. C.; Hu E. L.; Coldren L. A.; Merz J. L.

Low‐threshold high‐efficiency high‐yield impurity‐induced layer disordering laser by self‐aligned Si‐Zn diffusion
Appl. Phys. Lett. 57, 2534 (1990)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
427.
1990

Jewell Jack L.; McCall S. L.; Lee Y. H.; Scherer A.; Gossard A. C.; English J.

Optical computing and related microoptic devices
Appl. Opt. 29, 5050 (1990)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
428.
1990

Chalmers S. A.; Kroemer H.; Gossard A. C.

Step‐flow growth on strained surfaces; (Al,Ga)Sb tilted superlattices
Appl. Phys. Lett. 57, 1751 (1990)
Electrical and Computer Engineering Department and Materials Department, University of California, Santa Barbara, California 93106
429.
1990

Ensslin Klaus; Wixforth Achim; Sundaram Mani; English John H.; Gossard Arthur C.

Wide graded potential wells: growth, electrical properties and theoretical results
Proc. SPIE Int. Soc. Opt. Eng. 1285, 66 (1990)
Univ. of California/Santa Barbara (USA)
430.
1990

Doughty Kathryn L.; Law K. K.; Gossard Arthur C.; Maserjian Joseph L.; Merz James L.

Optoelectronic studies of an electrically tunable infrared detector
Proc. SPIE Int. Soc. Opt. Eng. 1283, 191 (1990)
Univ. of California/Santa Barbara (USA)
431.
1990

Gwinn E. G.; Sundaram M.; Westervelt R. M.; Rimberg A. J.; Hopkins P. F.; Gossard A. C.

Characterization of the electron gas in wide parabolic GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 41, 10700 (1990)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
432.
1990

Law K-K.; Yan R. H.; Gossard A. C.; Merz J. L.

Electric‐field‐induced absorption changes in triangular quantum wells grown by pulsed‐beam molecular‐beam‐epitaxy technique
J. Appl. Phys. 67, 6461 (1990)
Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106
433.
1990

Rao M. R.; Tarsa E. J.; Samoska L. A.; English J. H.; Gossard A. C.; Kroemer H.; Petroff P. M.; Hu E. L.

Superconducting YBaCuO thin films on GaAs/AlGaAs
Appl. Phys. Lett. 56, 1905 (1990)
Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106
434.
1990

Gossard Arthur C.; Petroff Pierre M.; Coldren Larry A.; Tsuchiya Masahiro

Growth and fabrication of quantum wells, wires, and dots for optical applications
Proc. SPIE Int. Soc. Opt. Eng. 1216, 82 (1990)
Univ. of California/Santa Barbara (USA)
435.
1990

Chalmers S. A.; Gossard A. C.; Petroff P. M.; Kroemer H.

A reflection high‐energy electron diffraction study of AlAs/GaAs tilted superlattice growth by migration‐enhanced epitaxy
J. Vac. Sci. Technol. B 8, 431 (1990)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
436.
1990

Yan R. H.; Simes R. J.; Coldren L. A.; Gossard A. C.

Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structures
Appl. Phys. Lett. 56, 1626 (1990)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93016
437.
1990

Rao M. R.; Tarsa E. J.; Kroemer H.; Gossard A. C.; Hu E. L.; Petroff P. M.; Olson W. L.; Eddy M. M.

Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film
Appl. Phys. Lett. 56, 490 (1990)
Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106
438.
1990

Wixforth A.; Sundaram M.; Ensslin K.; English J. H.; Gossard A. C.

Gate‐controlled subband structure and dimensionality of the electron system in a wide parabolic quantum well
Appl. Phys. Lett. 56, 454 (1990)
Materials Department, University of California, Santa Barbara, California 93106
439.
1990

Holtz P. O.; Sundaram M.; Merz J. L.; Gossard A. C.

Enhancement of the free‐to‐bound transition in narrow GaAs/Al;0.3Ga0.7As quantum wells via a possible excitonic Auger mechanism
Phys. Rev. B 41, 1489 (1990)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106
440.
1989

Holtz P. O.; Sundaram M.; Doughty K.; Merz J. L.; Gossard A. C.

Spectroscopic study of the effect of confinement on shallow acceptor states in GaAs/AlxGa1-;xAs quantum wells
Phys. Rev. B 40, 12338 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
441.
1989

Chalmers S. A.; Gossard A. C.; Weisenhorn A. L.; Gould S. A. C.; Drake B.; Hansma P. K.

Determination of tilted superlattice structure by atomic force microscopy
Appl. Phys. Lett. 55, 2491 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106
442.
1989

Holtz P. O.; Sundaram M.; Merz J. L.; Gossard A. C.

Observation of the acceptor‐bound exciton confined in narrow GaAs/Al;xGa1-;xAs quantum wells in photoluminescence excitation
Phys. Rev. B 40, 10021 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
443.
1989

Maserjian Joseph; Andersson P. O.; Hancock B. R.; Iannelli J. M.; Eng S. T.; Grunthaner F. J.; Law K.-K.; Holtz P. O.; Simes R. J.; Coldren L. A.; Gossard A. C.; Merz J.

Optically addressed spatial light modulators by MBE‐grown Nipi MQW structures
Appl. Opt. 28, 4801 (1989)
Jet Propulsion Laboratory, Pasadena, California 91109
444.
1989

Chalmers S. A.; Gaines J. M.; Petroff P. M.; Gossard A. C.; Kroemer H.

A reflection high‐energy electron diffraction study of (100) GaAs vicinal surfaces
J. Vac. Sci. Technol. B 7, 1357 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
445.
1989

Livescu G.; Fox A. M.; Miller D. A. B.; Sizer T.; Knox W. H.; Gossard A. C.; English J. H.

Resonantly enhanced electron tunneling rates in quantum wells
Phys. Rev. Lett. 63, 438 (1989)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
446.
1989

Holtz P. O.; Sundaram M.; Simes R.; Merz J. L.; Gossard A. C.; English J. H.

Spectroscopic study of an acceptor confined in a narrow GaAs/AlxGa1-;xAs quantum well
Phys. Rev. B 39, 13293 (1989)
Department of Electrical and Computer Engineering and Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
447.
1989

Juen S.; Höpfel R. A.; Gossard A. C.

Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells
Appl. Phys. Lett. 54, 2097 (1989)
Institut für Experimentalphysik, Universität Innsbruck, A‐6020 Innsbruck, Austria;
448.
1989

Yan R. H.; Simes R. J.; Ribot H.; Coldren L. A.; Gossard A. C.

Room‐temperature two‐dimension exciton exchange and blue shift of absorption edge in GaAs/AlGaAs superlattices under an electric field
Appl. Phys. Lett. 54, 1549 (1989)
Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106
449.
1989

Gwinn E. G.; Westervelt R. M.; Hopkins P. F.; Rimberg A. J.; Sundaram M.; Gossard A. C.

Quantum Hall effect in wide parabolic GaAs/AlxGa1-;xAs wells
Phys. Rev. B 39, 6260 (1989)
Division of Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138
450.
1989

Simes R. J.; Yan R. H.; English J. H.; Coldren L. A.; Gossard A. C.

Molecular‐beam epitaxy grown Fabry–Perot multiple quantum well reflection modulator
J. Vac. Sci. Technol. B 7, 412 (1989)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
451.
1989

Livescu G.; Miller D. A. B.; Sizer T.; Burrows D. J.; Cunningham J. E.; Gossard A. C.; English J. H.

High‐speed absorption recovery in quantum well diodes by diffusive electrical conduction
Appl. Phys. Lett. 54, 748 (1989)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
452.
1989

Law K.-K.; Maserjian J.; Simes R. J.; Coldren L. A.; Gossard A. C.; Merz J.

Optically controlled reflection modulator using GaAs–AlGaAs n‐i‐p‐i/multiple‐quantum‐well structures
Opt. Lett. 14, 230 (1989)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106
453.
1988

Pinczuk A.; Valladares J. P.; Heiman D.; Gossard A. C.; English J. H.; Tu C. W.; Pfeiffer L.; West K.

Observation of roton density of states in two‐dimensional Landau‐level excitations
Phys. Rev. Lett. 61, 2701 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
454.
1988

Goldberg B. B.; Heiman D.; Graf M. J.; Broido D. A.; Pinczuk A.; Tu C. W.; English J. H.; Gossard A. C.

Optical transmission spectroscopy of the two‐dimensional electron gas in GaAs in the quantum Hall regime
Phys. Rev. B 38, 10131 (1988)
MIT Francis Bitter National Magnet Laboratory, Cambridge, Massachusetts 02139
455.
1988

Gammel P. L.; Bishop D. J.; Eisenstein J. P.; English J. H.; Gossard A. C.; Ruel R.; Stormer H. L.

Ultralow‐temperature behavior of the ;ν;=(5/2 fractional quantum Hall effect
Phys. Rev. B 38, 10128 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
456.
1988

Eisenstein J. P.; Willett R.; Stormer H. L.; Tsui D. C.; Gossard A. C.; English J. H.

Collapse of the even‐denominator fractional quantum Hall effect in tilted fields
Phys. Rev. Lett. 61, 997 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
457.
1988

Simes R. J.; Yan R. H.; Geels R. S.; Coldren L. A.; English J. H.; Gossard A. C.; Lishan D. G.

Electrically tunable Fabry–Perot mirror using multiple quantum well index modulation
Appl. Phys. Lett. 53, 637 (1988)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
458.
1988

Heiman D.; Gossard A. C.; Tu C. W.; Pinczuk A.; Goldberg B. B.; English J. H.

Optical anomalies of the two‐dimensional electron gas in the extreme magnetic quantum limit
Phys. Rev. Lett. 61, 605 (1988)
Massachusetts Institute of Technology, Francis Bitter National Magnet Laboratory, Cambridge, Massachusetts 02139
459.
1988

Simes R. J.; Yan R. H.; Geels R.; Coldren L. A.; English J. H.; Gossard A. C.

Fabry‐Perot multiple‐quantum well index modulator
Appl. Opt. 27, 2103 (1988)
University of California—Santa Barbara, Electrical & Computer Engineering Department, Santa Barbara, California 93106;
460.
1988

Willett R. L.; Stormer H. L.; Tsui D. C.; Gossard A. C.; English J. H.

Quantitative experimental test for the theoretical gap energies in the fractional quantum Hall effect
Phys. Rev. B 37, 8476 (1988)
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
461.
1988

Höpfel R. A.; Shah J.; Wolff P. A.; Gossard A. C.

Electron‐hole scattering in GaAs quantum wells
Phys. Rev. B 37, 6941 (1988)
Institut für Experimentalphysik, Universität Innsbruck, Technikerstrasse 25, A‐6020 Innsbruck, Austria;
462.
1988

Park S. H.; Morhange J. F.; Jeffery A. D.; Morgan R. A.; Chavez-Pirson A.; Gibbs H. M.; Koch S. W.; Peyghambarian N.; Derstine M.; Gossard A. C.; English J. H.; Weigmann W.

Measurements of room‐temperature band‐gap‐resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs
Appl. Phys. Lett. 52, 1201 (1988)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
463.
1988

Livescu G.; Miller D. A. B.; Henry J. E.; Gossard A. C.; English J. H.

Spatial light modulator and optical dynamic memory using a 6×6 array of self‐electro‐optic‐effect devices
Opt. Lett. 13, 297 (1988)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
464.
1988

Batke E.; Stormer H. L.; Gossard A. C.; English J. H.

Filling‐factor‐dependent cyclotron mass in space‐charge layers on GaAs
Phys. Rev. B 37, 3093 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974‐2070;
465.
1987

Shah Jagdeep; Deveaud Benoit; Damen T. C.; Tsang W. T.; Gossard A. C.; Lugli P.

Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy
Phys. Rev. Lett. 59, 2222 (1987)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
466.
1987

Sen Susanta; Capasso Federico; Gossard Arthur C.; Spah Richard A.; Hutchinson Albert L.; Chu S. N. G.

Observation of resonant tunneling through a compositionally graded parabolic quantum well
Appl. Phys. Lett. 51, 1428 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
467.
1987

Willett R.; Eisenstein J. P.; Störmer H. L.; Tsui D. C.; Gossard A. C.; English J. H.

Observation of an even‐denominator quantum number in the fractional quantum Hall effect
Phys. Rev. Lett. 59, 1776 (1987)
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
468.
1987

Eisenstein J. P.; Gossard A. C.; Narayanamurti V.

Quantum oscillations in the thermal conductance of GaAs/AlGaAs heterostructures
Phys. Rev. Lett. 59, 1341 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
469.
1987

Monroe Don; Gossard A. C.; English J. H.; Golding B.; Haemmerle W. H.; Kastner M. A.

Long‐lived Coulomb gap in a compensated semiconductor;—;the electron glass
Phys. Rev. Lett. 59, 1148 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
470.
1987

Jewell J. L.; Scherer A.; McCall S. L.; Gossard A. C.; English J. H.

GaAs‐AlAs monolithic microresonator arrays
Appl. Phys. Lett. 51, 94 (1987)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
471.
1987

Petroff P. M.; Cibert J.; Gossard A. C.; Dolan G. J.; Tu C. W.

Interface structure and optical properties of quantum wells and quantum boxes
J. Vac. Sci. Technol. B 5, 1204 (1987)
Materials Program and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
472.
1987

English J. H.; Gossard A. C.; Störmer H. L.; Baldwin K. W.

GaAs structures with electron mobility of 5×10;6 cm2/V s
Appl. Phys. Lett. 50, 1826 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
473.
1987

Boyd G. D.; Miller D. A. B.; Chemla D. S.; McCall S. L.; Gossard A. C.; English J. H.

Multiple quantum well reflection modulator
Appl. Phys. Lett. 50, 1119 (1987)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
474.
1987

Islam M. N.; Hillman R. L.; Miller D. A. B.; Chemla D. S.; Gossard A. C.; English J. H.

Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
Appl. Phys. Lett. 50, 1098 (1987)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
475.
1987

Sooryakumar R.; Chemla D. S.; Gossard A. C.; Pinczuk A.; Sham L. J.

Tuning of the valence‐band structure of GaAs quantum wells by uniaxial stress
Phys. Rev. Lett. 58, 1150 (1987)
Department of Physics, The Ohio State University, Columbus, Ohio 43210
476.
1987

Zucker J. E.; Pinczuk A.; Chemla D. S.; Gossard A. C.

Resonant Raman study of low‐temperature exciton localization in GaAs quantum wells
Phys. Rev. B 35, 2892 (1987)
AT&T Bell Laboratories, Holmdel, New Jersey 07733‐1988;
477.
1987

Kleinman D. A.; Miller R. C.; Gossard A. C.

Doubly resonant LO‐phonon Raman scattering observed with GaAs‐Al;xGa1-;xAs quantum wells
Phys. Rev. B 35, 664 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974‐2070;
478.
1987

Levi A. F. J.; Hayes J. R.; Gossard A. C.; English J. H.

Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor
Appl. Phys. Lett. 50, 98 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
479.
1986

Nelson D. F.; Kleinman D. A.; Miller R. C.; Gossard A. C.

Tunneling‐assisted photon emission from quantum wells
Phys. Rev. B 34, 8671 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974‐2070;
480.
1986

Lee Y. H.; Chavez-Pirson A.; Rhee B. K.; Gibbs H. M.; Gossard A. C.; Wiegmann W.

Direct measurement of dispersive nonlinearities in GaAs
Appl. Phys. Lett. 49, 1505 (1986)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
481.
1986

Hayes J. R.; Gossard A. C.; Levi A. F. J.; English J. H.

Base transport dynamics in a heterojunction bipolar transistor
Appl. Phys. Lett. 49, 1481 (1986)
Bell Communications Research, Red Bank, New Jersey 07701‐7020;
482.
1986

Lee Y. H.; Gossard A. C.; Banyai L.; Peyghambarian N.; Jeffery A.; Morhange J.; Park S. H.; Gibbs H. M.; Koch S. W.; Chavez-Pirson A.; Wiegmann W.

Room‐temperature optical nonlinearities in GaAs
Phys. Rev. Lett. 57, 2446 (1986)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
483.
1986

Cibert J.; Petroff P. M.; Dolan G. J.; Pearton S. J.; Gossard A. C.; English J. H.

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
Appl. Phys. Lett. 49, 1275 (1986)
AT&T Laboratories, Murray Hill, New Jersey 07974;
484.
1986

Miller D. A. B.; Henry J. E.; Gossard A. C.; English J. H.

Integrated quantum well self‐electro‐optic effect device; 2×2 array of optically bistable switches
Appl. Phys. Lett. 49, 821 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
485.
1986

Höpfel R. A.; Shah J.; Wolff P. A.; Gossard A. C.

Negative absolute mobility of holes in n‐doped GaAs quantum wells
Appl. Phys. Lett. 49, 572 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
486.
1986

Lee Y. H.; Gibbs H. M.; Jewell J. L.; Duffy J. F.; Venkatesan T.; Gossard A. C.; Wiegmann W.; English J. H.

Speed and effectiveness of windowless GaAs étalons as optical logic gates
Appl. Phys. Lett. 49, 486 (1986)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
487.
1986

Cibert J.; Petroff P. M.; Werder D. J.; Pearton S. J.; Gossard A. C.; English J. H.

Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐Ga;xAl1-;xAs interfaces
Appl. Phys. Lett. 49, 223 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
488.
1986

Menéndez J.; Werder D. J.; English J. H.; Gossard A. C.; Pinczuk A.; Lamont M. G.

Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells
J. Vac. Sci. Technol. B 4, 1041 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
489.
1986

Höpfel Ralph A.; Shah Jagdeep; Wolff Peter A.; Gossard Arthur C.

Negative absolute mobility of minority electrons in GaAs quantum wells
Phys. Rev. Lett. 56, 2736 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
490.
1986

Menéndez J.; Gossard A. C.; Pinczuk A.; Werder D. J.; English J. H.

Light scattering determination of band offsets in GaAs‐Al;xGa1-;xAs quantum wells
Phys. Rev. B 33, 8863 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
491.
1986

Von Lehmen A.; Zucker J. E.; Heritage J. P.; Chemla D. S.; Gossard A. C.

Two‐wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wells
Appl. Phys. Lett. 48, 1479 (1986)
Bell Communications Research, Holmdel, New Jersey 07733
492.
1986

Jewell J. L.; Lee Y. H.; Duffy J. F.; Gossard A. C.; Wiegmann W.

Parallel operation and crosstalk measurements in GaAs étalon optical logic devices
Appl. Phys. Lett. 48, 1342 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
493.
1986

Ng H. K.; Capizzi M.; Thomas G. A.; Bhatt R. N.; Gossard A. C.

Short‐length‐scale conductivity enhancement in a superlattice
Phys. Rev. B 33, 7329 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
494.
1986

Pinczuk A.; Lamont M. G.; Gossard A. C.

Discrete plasmons in finite semiconductor multilayers
Phys. Rev. Lett. 56, 2092 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
495.
1986

Knox W. H.; Damen T. C.; Miller D. A. B.; Chemla D. S.; Shank C. V.; Gossard A. C.

Subpicosecond excitonic electroabsorption in room‐temperature quantum wells
Appl. Phys. Lett. 48, 864 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
496.
1986

Höpfel Ralph A.; Shah Jagdeep; Gossard Arthur C.

Nonequilibrium electron‐hole plasma in GaAs quantum wells
Phys. Rev. Lett. 56, 765 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
497.
1986

Höpfel R. A.; Shah J.; Block D.; Gossard A. C.

Picosecond time‐of‐flight measurements of minority electrons in GaAs/AlGaAs quantum well structures
Appl. Phys. Lett. 48, 148 (1986)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
498.
1986

Störmer H. L.; Eisenstein J. P.; Gossard A. C.; Wiegmann W.; Baldwin K.

Quantization of the Hall effect in an anisotropic three‐dimensional electronic system
Phys. Rev. Lett. 56, 85 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
499.
1985

Miller R. C.; Gossard A. C.; Chang Yia-Chung; Sanders G. D.; Schulman J. N.

New evidence of extensive valence‐band mixing in GaAs quantum wells through excitation photoluminescence studies
Phys. Rev. B 32, 8452 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
500.
1985

Weiner J. S.; Miller D. A. B.; Chemla D. S.; Damen T. C.; Burrus C. A.; Wood T. H.; Gossard A. C.; Wiegmann W.

Strong polarization‐sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides
Appl. Phys. Lett. 47, 1148 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
501.
1985

Miller R. C.; Gossard A. C.; Kleinman D. A.

Band offsets from two special GaAs‐Al;xGa1-;xAs quantum‐well structures
Phys. Rev. B 32, 5443 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
502.
1985

Schlesinger Z.; Allen S. J.; Yafet Y.; Gossard A. C.; Wiegmann W.

Cyclotron resonance in the two‐dimensional hole gas in (Ga,Al)As/GaAs heterostructures
Phys. Rev. B 32, 5231 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
503.
1985

Weiner J. S.; Chemla D. S.; Miller D. A. B.; Haus H. A.; Gossard A. C.; Wiegmann W.; Burrus C. A.

Highly anisotropic optical properties of single quantum well waveguides
Appl. Phys. Lett. 47, 664 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
504.
1985

Penna A. F. S.; Shah Jagdeep; DiGiovanni A. E.; Cho A. Y.; Gossard A. C.

Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy
Appl. Phys. Lett. 47, 591 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
505.
1985

Eisenstein J. P.; Stormer H. L.; Narayanamurti V.; Cho A. Y.; Gossard A. C.; Tu C. W.

Density of states and de Haas–;van Alphen effect in two‐dimensional electron systems
Phys. Rev. Lett. 55, 875 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
506.
1985

Houdré R.; Hermann C.; Lampel G.; Frijlink P. M.; Gossard A. C.

Photoemission from a superlattice and a single quantum well
Phys. Rev. Lett. 55, 734 (1985)
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau Cedex, France;
507.
1985

Miller D. A. B.; Chemla D. S.; Damen T. C.; Gossard A. C.; Wiegmann W.; Wood T. H.; Burrus C. A.

Electric field dependence of optical absorption near the band gap of quantum‐well structures
Phys. Rev. B 32, 1043 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
508.
1985

Höpfel R. A.; Shah J.; Gossard A. C.; Wiegmann W.

Electroreflectance of GaAs‐AlGaAs modulation‐doped field‐effect transistors
Appl. Phys. Lett. 47, 163 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
509.
1985

Jewell J. L.; Lee Y. H.; Warren M.; Gibbs H. M.; Peyghambarian N.; Gossard A. C.; Wiegmann W.

3‐pJ, 82‐MHz optical logic gates in a room‐temperature GaAs‐AlGaAs multiple‐quantum‐well étalon
Appl. Phys. Lett. 46, 918 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
510.
1985

Shah Jagdeep; Pinczuk A.; Gossard A. C.; Wiegmann W.

Energy‐loss rates for hot electrons and holes in GaAs quantum wells
Phys. Rev. Lett. 54, 2045 (1985)
AT&T Bell Laboratories, Holmdel, New Jersery 07733;
511.
1985

Gornik E.; Lassnig R.; Strasser G.; Störmer H. L.; Gossard A. C.; Wiegmann W.

Specific heat of two‐dimensional electrons in GaAs‐GaAlAs multilayers
Phys. Rev. Lett. 54, 1820 (1985)
Institut für Experimentalphysik, Universitat Innsbruck, 6020 Innsbruck, Austria;
512.
1985

Silberberg Y.; Smith P. W.; Miller D. A. B.; Tell B.; Gossard A. C.; Wiegmann W.

Fast nonlinear optical response from proton‐bombarded multiple quantum well structures
Appl. Phys. Lett. 46, 701 (1985)
Bell Communications Research, Holmdel, New Jersey 07733
513.
1985

Knox W. H.; Gossard A. C.; Shank C. V.; Chemla D. S.; Miller D. A. B.; Downer M. C.; Fork R. L.; Wiegmann W.

Femtosecond dynamics of resonantly excited excitons in room‐temperature GaAs quantum wells
Phys. Rev. Lett. 54, 1306 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
514.
1985

Gossard A. C.; Wiegmann W.; Störmer H. L.; Baldwin K.

Summary Abstract: Molecular beam epitaxy of p‐type modulation doped GaAs and application to ;p‐channel field effect transistors
J. Vac. Sci. Technol. B 3, 584 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
515.
1985

Sooryakumar R.; Pinczuk A.; Gossard A.; Wiegmann W.

Dispersion of collective intersubband excitations in semiconductor superlattices
Phys. Rev. B 31, 2578 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
516.
1985

Colvard C.; Gant T. A.; Klein M. V.; Merlin R.; Fischer R.; Morkoc H.; Gossard A. C.

Folded acoustic and quantized optic phonons in (GaAl)As superlattices
Phys. Rev. B 31, 2080 (1985)
Department of Physics and Materials Research Laboratory, University of Illinois at UrbanaChampaign 1110 West Green Street, Urbana, Illinois 61801
517.
1984

Eisenstein J. P.; Störmer H. L.; Narayanamurti V.; Gossard A. C.; Wiegmann W.

Effect of inversion symmetry on the band structure of semiconductor heterostructures
Phys. Rev. Lett. 53, 2579 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
518.
1984

Luryi S.; Kastalsky A.; Gossard A. C.; Hendel R.

Hot‐electron memory effect in double‐layered heterostructures
Appl. Phys. Lett. 45, 1294 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
519.
1984

Miller D. A. B.; Chemla D. S.; Damen T. C.; Wood T. H.; Burrus C. A.; Gossard A. C.; Wiegmann W.

Optical‐level shifter and self‐linearized optical modulator using a quantum‐well self‐electro‐optic effect device
Opt. Lett. 9, 567 (1984)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
520.
1984

Miller D. A. B.; Chemla D. S.; Damen T. C.; Gossard A. C.; Wiegmann W.; Wood T. H.; Burrus C. A.

Band‐edge electroabsorption in quantum well structures; The quantum‐confined Stark effect
Phys. Rev. Lett. 53, 2173 (1984)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
521.
1984

Ryan J. F.; Taylor R. A.; Turberfield A. J.; Maciel Angela; Worlock J. M.; Gossard A. C.; Wiegmann W.

Time‐resolved photoluminescence of two‐dimensional hot carriers in GaAs‐AlGaAs heterostructures
Phys. Rev. Lett. 53, 1841 (1984)
Clarendon Laboratory, Oxford University, Oxford, England
522.
1984

Silberberg Y.; Smith P. W.; Eilenberger D. J.; Miller D. A. B.; Gossard A. C.; Wiegmann W.

Passive mode locking of a semiconductor diode laser
Opt. Lett. 9, 507 (1984)
Bell Communications Research Inc., Holmdel, New Jersey 07733
523.
1984

Zucker J. E.; Pinczuk A.; Chemla D. S.; Gossard A.; Wiegmann W.

Optical vibrational modes and electron‐phonon interaction in GaAs quantum wells
Phys. Rev. Lett. 53, 1280 (1984)
Columbia University, New York, New York 10027
524.
1984

Lin B. J. F.; Tsui D. C.; Paalanen M. A.; Gossard A. C.

Mobility of the two‐dimensional electron gas in GaAs‐Al;xGa1-;xAs heterostructures
Appl. Phys. Lett. 45, 695 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
525.
1984

Petroff P. M.; Gossard A. C.; Wiegmann W.

Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
Appl. Phys. Lett. 45, 620 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
526.
1984

Hayes J. R.; Gossard A. C.; Leheny R. F.; Temkin H.; Wiegmann W.

Electroluminescence from a heterojunction bipolar transistor
Appl. Phys. Lett. 45, 537 (1984)
Bell Communications Research, Murray Hill, New Jersey 07974
527.
1984

Cage M. E.; Field B. F.; Dziuba R. F.; Girvin S. M.; Gossard A. C.; Tsui D. C.

Temperature dependence of the quantum Hall resistance
Phys. Rev. B 30, 2286 (1984)
Electricity Division, Center for Basic Standards, National Bureau of Standards, Washington, D.C. 20234
528.
1984

Venkatesan T.; Lemarie P. J.; Wilkens B.; Soto L.; Gossard A. C.; Weigmann W.; Jewell J. L.; Gibbs H. M.; Tarng S. S.

All‐optical data switching in an optical‐fiber link using a GaAs optical bistable device
Opt. Lett. 9, 297 (1984)
Bell Communications Research, Inc., Murray Hill, New Jersey 07974
529.
1984

Sooryakumar R.; Chemla D. S.; Pinczuk A.; Gossard A.; Weigmann W.; Sham L. J.

Summary Abstract: Direct observation of band mixing in GaAs–(Al;xGa1-;x)As quantum heterostructures
J. Vac. Sci. Technol. B 2, 349 (1984)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
530.
1984

Miller D. A. B.; Chemla D. S.; Damen T. C.; Gossard A. C.; Wiegmann W.; Wood T. H.; Burrus C. A.

Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device
Appl. Phys. Lett. 45, 13 (1984)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
531.
1984

Miller R. C.; Kleinman D. A.; Gossard A. C.

Energy‐gap discontinuities and effective masses for GaAs‐Al;xGa1-;xAs quantum wells
Phys. Rev. B 29, 7085 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
532.
1984

Zucker J. E.; Pinczuk A.; Chemla D. S.; Gossard A.; Wiegmann W.

Delocalized excitons in semiconductor heterostructures
Phys. Rev. B 29, 7065 (1984)
Columbia University, New York, New York 10027
533.
1984

Störmer H. L.; Baldwin K.; Gossard A. C.; Wiegmann W.

Modulation‐doped field‐effect transistor based on a two‐dimensional hole gas
Appl. Phys. Lett. 44, 1062 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
534.
1984

Paalanen M. A.; Tsui D. C.; Gossard A. C.; Hwang J. C. M.

Temperature dependence of electron mobility in GaAs‐Al;xGa1-;xAs heterostructures from 1 to 10 K
Phys. Rev. B 29, 6003 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
535.
1984

Miller D. A. B.; Gossard A. C.; Wiegmann W.

Optical bistability due to increasing absorption
Opt. Lett. 9, 162 (1984)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
536.
1984

Miller R. C.; Kleinman D. A.; Gossard A. C.; Munteanu O.

Parabolic quantum wells with the GaAs‐Al;xGa1-;xAs system p
Phys. Rev. B 29, 3740 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
537.
1984

Tarng S. S.; Gibbs H. M.; Jewell J. L.; Peyghambarian N.; Gossard A. C.; Venkatesan T.; Wiegmann W.

Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon
Appl. Phys. Lett. 44, 360 (1984)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
538.
1984

Shah Jagdeep; Pinczuk A.; Störmer H. L.; Gossard A. C.; Wiegmann W.

Hot electrons in modulation‐doped GaAs‐AlGaAs heterostructures
Appl. Phys. Lett. 44, 322 (1984)
Bell Laboratories, Holmdel, New Jersey 07733
539.
1984

Lin B. J. F.; Paalanen M. A.; Gossard A. C.; Tsui D. C.

Weak localization of two‐dimensional electrons in GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. B 29, 927 (1984)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
540.
1984

Petroff P. M.; Miller R. C.; Gossard A. C.; Wiegmann W.

Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
Appl. Phys. Lett. 44, 217 (1984)
Bell Laboratories, Murray Hill, New Jersey 07974
541.
1984

Wood T. H.; Burrus C. A.; Miller D. A. B.; Chemla D. S.; Damen T. C.; Gossard A. C.; Wiegmann W.

High‐speed optical modulation with GaAs/GaAlAs quantum wells in a ;p‐;i‐;n diode structure
Appl. Phys. Lett. 44, 16 (1984)
Bell Laboratories, Crawford Hill, Holmdel, New Jersey 07733
542.
1984

Störmer H. L.; Gossard A. C.; Wiegmann W.; Blondel R.; Baldwin K.

Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As
Appl. Phys. Lett. 44, 139 (1984)
Bell Laboratories, Murray Hill, New Jersey 07974
543.
1983

Miller Robert C.; Gossard Arthur C.

Some effects of a longitudinal electric field on the photoluminescence of p‐doped GaAs‐Al;xGa1-;xAs quantum well heterostructures
Appl. Phys. Lett. 43, 954 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
544.
1983

Hayes J. R.; Capasso F.; Malik R. J.; Gossard A. C.; Wiegmann W.

Optimum emitter grading for heterojunction bipolar transistors
Appl. Phys. Lett. 43, 949 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
545.
1983

Cage M. E.; Tsui D. C.; Gossard A. C.; Girvin S. M.; Williams E. R.; Field B. F.; Dziuba R. F.; Wagner R. J.

Dissipation and dynamic nonlinear behavior in the quantum Hall regime
Phys. Rev. Lett. 51, 1374 (1983)
Electrical Measurements and Standards Division, Center for Absolute Physical Quantities, National Bureau of Standards, Washington, D.C. 20234
546.
1983

Zucker J. E.; Pinczuk A.; Chemla D. S.; Gossard A.; Wiegmann W.

Raman scattering resonant with quasi‐two‐dimensional excitons in semiconductor quantum wells
Phys. Rev. Lett. 51, 1293 (1983)
Columbia University, New York, New York 10027
547.
1983

Miller Robert C.; Gossard Arthur C.

Anomalous polarization in the photoluminescence from Si‐doped GaAs‐Al;xGa1-;xAs quantum‐well samples
Phys. Rev. B 28, 3645 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
548.
1983

Miller D. A. B.; Smith P. W.; Gossard A. C.; Chemla D. S.; Wiegmann W.

Nonlinear optics with a diode‐laser light source
Opt. Lett. 8, 477 (1983)
Bell Laboratories, Holmdel, New Jersey 07733
549.
1983

Stormer H. L.; Schlesinger Z.; Chang A.; Tsui D. C.; Gossard A. C.; Wiegmann W.

Energy structure and quantized Hall effect of two‐dimensional holes
Phys. Rev. Lett. 51, 126 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
550.
1983

Stormer H. L.; Chang A.; Tsui D. C.; Hwang J. C. M.; Gossard A. C.; Wiegmann W.

Fractional quantization of the Hall effect
Phys. Rev. Lett. 50, 1953 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
551.
1983

Miller D. A. B.; Chemla D. S.; Eilenberger D. J.; Smith P. W.; Gossard A. C.; Wiegmann W.

Degenerate four‐wave mixing in room‐temperature GaAs/GaAlAs multiple quantum well structures
Appl. Phys. Lett. 42, 925 (1983)
Bell Laboratories, Holmdel, New Jersey 07733
552.
1983

Chemla D. S.; Damen T. C.; Miller D. A. B.; Gossard A. C.; Wiegmann W.

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures
Appl. Phys. Lett. 42, 864 (1983)
Bell Laboratories, Holmdel, New Jersey 07733
553.
1983

Englert Th.; Maan J. C.; Uihlein Ch.; Tsui D. C.; Gossard A. C.

Cyclotron resonance of 2D electrons in GaAs/AlxGa1-;xAs heterostructures at low densities
J. Vac. Sci. Technol. B 1, 427 (1983)
Max‐Planck‐Institut für Festkörperforschung, Hochfeld–Magnetlabor, F‐38042 Grenoble, France;
554.
1983

Störmer H. L.; Haavasoja T.; Narayanamurti V.; Gossard A. C.; Wiegmann W.

Observation of the deHaas–van Alphen effect in a two‐dimensional electron system
J. Vac. Sci. Technol. B 1, 423 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
555.
1983

Olego D.; Pinczuk A.; Gossard A. C.; Wiegmann W.

Plasma oscillations of layered electron gases in semiconductor heterostructures
J. Vac. Sci. Technol. B 1, 412 (1983)
Bell Laboratories, Holmdel, New Jersey 07733
556.
1983

Tsui D. C.; Gossard A. C.; Dolan G. J.

Radiation effects on modulation‐doped GaAs‐Al;xGa1-;xAs heterostructures
Appl. Phys. Lett. 42, 180 (1983)
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey 08544
557.
1983

Shah Jagdeep; Pinczuk A.; Störmer H. L.; Gossard A. C.; Wiegmann W.

Electric field induced heating of high mobility electrons in modulation‐doped GaAs‐AlGaAs heterostructures
Appl. Phys. Lett. 42, 55 (1983)
Bell Telephone Laboratories, Incorporated, Holmdel, New Jersey 07733
558.
1982

Miller D. A. B.; Chemla D. S.; Eilenberger D. J.; Smith P. W.; Gossard A. C.; Tsang W. T.

Large room‐temperature optical nonlinearity in GaAs/Ga;1-;x Al;xAs multiple quantum well structures
Appl. Phys. Lett. 41, 679 (1982)
Bell Laboratories, Holmdel, New Jersey 07733
559.
1982

Petroff P. M.; Logan R. A.; Gossard A. C.; Wiegmann W.

Toward quantum well wires: Fabrication and optical properties
Appl. Phys. Lett. 41, 635 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
560.
1982

Hegarty J.; Sturge M. D.; Weisbuch C.; Gossard A. C.; Weigmann W.

Resonant Rayleigh scattering from an inhomogeneously broadened transition: A new probe of the homogeneous linewidth
Phys. Rev. Lett. 49, 930 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
561.
1982

Chen C. Y.; Cho A. Y.; Gossard A. C.; Garbinski P. A.

Offset channel insulated gate field‐effect transistors
Appl. Phys. Lett. 41, 360 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
562.
1982

Gibbs H. M.; Tarng S. S.; Jewell J. L.; Weinberger D. A.; Tai K.; Gossard A. C.; McCall S. L.; Passner A.; Wiegmann W.

Room‐temperature excitonic optical bistability in a GaAs‐GaAlAs superlattice étalon
Appl. Phys. Lett. 41, 221 (1982)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
563.
1982

Störmer H. L.; Gossard A. C.; Wiegmann W.

Summary Abstract: The onset of intersubband scattering in a two‐dimensional electron system
J. Vac. Sci. Technol. 21, 507 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
564.
1982

Tsui D. C.; Stormer H. L.; Gossard A. C.

Two‐dimensional magnetotransport in the extreme quantum limit
Phys. Rev. Lett. 48, 1559 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
565.
1982

Miller R. C.; Kleinman D. A.; Gossard A. C.; Munteanu O.

Biexcitons in GaAs quantum wells
Phys. Rev. B 25, 6545 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
566.
1982

Gossard A. C.; Kazarinov R. F.; Luryi S.; Wiegmann W.

Electric properties of unipolar GaAs structures with ultrathin triangular barriers
Appl. Phys. Lett. 40, 832 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
567.
1982

Paalanen M. A.; Tsui D. C.; Gossard A. C.

Quantized Hall effect at low temperatures
Phys. Rev. B 25, 5566 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
568.
1982

Maan J. C.; Englert Th.; Tsui D. C.; Gossard A. C.

Observation of cyclotron resonance in the photoconductivity of two‐dimensional electrons
Appl. Phys. Lett. 40, 609 (1982)
Max–Planck‐Institut für Festkörperforschung, Hochfeld‐Magnetlabor, 166X, F‐38042 Grenoble, France;
569.
1982

Miller R. C.; Gossard A. C.; Tsang W. T.; Munteanu O.

Extrinsic photoluminescence from GaAs Quantum wells
Phys. Rev. B 25, 3871 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
570.
1982

Gossard A. C.; Brown W.; Allyn C. L.; Wiegmann W.

Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
J. Vac. Sci. Technol. 20, 694 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
571.
1982

Jewell J. L.; Gibbs H. M.; Tarng S. S.; Gossard A. C.; Wiegmann W.

Regenerative pulsations from an intrinsic bistable optical device
Appl. Phys. Lett. 40, 291 (1982)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
572.
1982

Tarng S. S.; Tai K.; Jewell J. L.; Gibbs H. M.; Gossard A. C.; McCall S. L.; Passner A.; Venkatesan T. N. C.; Wiegmann W.

External off and on switching of a bistable optical device
Appl. Phys. Lett. 40, 205 (1982)
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
573.
1982

Petroff P. M.; Cho A. Y.; Reinhart F. K.; Gossard A. C.; Wiegmann W.

Alloy clustering in Ga1-;xAlxAs compound semiconductors grown by molecular beam epitaxy
Phys. Rev. Lett. 48, 170 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
574.
1982

Tsui D. C.; Störmer H. L.; Gossard A. C.

Zero‐resistance state of two‐dimensional electrons in a quantizing magnetic field
Phys. Rev. B 25, 1405 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
575.
1982

Hegarty J.; Sturge M. D.; Gossard A. C.; Wiegmann W.

Resonant degenerate four‐wave mixing in GaAs multiquantum well structures
Appl. Phys. Lett. 40, 132 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
576.
1982

Tsui D. C.; Cage M. E.; Field B. F.; Gossard A. C.; Dziuba R. F.

Determination of the fine‐structure constant using GaAs‐Al;xGa1-;xAs heterostructures
Phys. Rev. Lett. 48, 3 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
577.
1981

Störmer H. L.; Gossard A. C.; Wiegmann W.; Baldwin K.

Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
Appl. Phys. Lett. 39, 912 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
578.
1981

Tsui D. C.; Gossard A. C.; Kaminsky G.; Wiegmann W.

Transport properties of GaAs‐Al;xGa1-;x As heterojunction field‐effect transistors
Appl. Phys. Lett. 39, 712 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
579.
1981

Störmer H. L.; Gossard A. C.; Wiegmann W.

Backside‐gated modulation‐doped GaAs‐(AlGa)As heterojunction interface
Appl. Phys. Lett. 39, 493 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
580.
1981

Petroff P. M.; Weisbuch C.; Dingle R.; Gossard A. C.; Wiegmann W.

Summary Abstract: Luminescence properties and structure of GaAs–Ga;1-;xAlxAs double heterostructure and multiple quantum wells superlattices
J. Vac. Sci. Technol. 19, 571 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
581.
1981

Pinczuk A.; Worlock J. M.; Störmer H. L.; Gossard A. C.; Wiegmann W.

Light scattering spectroscopy of electrons in GaAs–(AlGa)As heterostructures; Correlation with transport properties
J. Vac. Sci. Technol. 19, 561 (1981)
Bell Laboratories, Holmdel, New Jersey 07733
582.
1981

Miller R. C.; Kleinman D. A.; Tsang W. T.; Gossard A. C.

Observation of the excited level of excitons in GaAs quantum wells
Phys. Rev. B 24, 1134 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
583.
1981

Petroff P. M.; Weisbuch C.; Dingle R.; Gossard A. C.; Wiegmann W.

Luminescence properties of GaAs‐Ga;1-;x Alx As double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy
Appl. Phys. Lett. 38, 965 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
584.
1981

Weisbuch C.; Dingle R.; Petroff P. M.; Gossard A. C.; Wiegmann W.

Dependence of the structural and optical properties of GaAs‐Ga;1-x;AlxAs multiquantum‐well structures on growth temperature
Appl. Phys. Lett. 38, 840 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
585.
1981

Pinczuk A.; Shah Jagdeep; Gossard A. C.; Wiegmann W.

Light scattering by a photoexcited two‐dimensional electron plasma in GaAs‐(AlGa) as heterostructures
Phys. Rev. Lett. 46, 1341 (1981)
Bell Telephone Laboratories, Holmdel, New Jersey 07733
586.
1981

Störmer H. L.; Pinczuk A.; Gossard A. C.; Wiegmann W.

Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices
Appl. Phys. Lett. 38, 691 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974 and
587.
1981

Miller Robert C.; Weisbuch Claude; Gossard Arthur C.

Alloy clustering in AlxGa1-;xAs
Phys. Rev. Lett. 46, 1042 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
588.
1981

Tsui D. C.; Gossard A. C.

Resistance standard using quantization of the Hall resistance of GaAs‐Al;xGa1-;xAs heterostructures
Appl. Phys. Lett. 38, 550 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
589.
1980

Pinczuk A.; Worlock J. M.; Störmer H. L.; Dingle R.; Wiegmann W.; Gossard A. C.

Summary Abstract: Light scattering spectroscopy of confined carriers in GaAs–AlGaAs heterojunction superlattices
J. Vac. Sci. Technol. 17, 1132 (1980)
Bell Telephone Laboratories, Holmdel, New Jersey 07733
590.
1980

Weisbuch C.; Dingle R.; Gossard A. C.; Weigmann W.

Summary Abstract: Optical characterization of interface disorder in multiquantum well GaAs–Al;xGa1-;xAs superlattice structures
J. Vac. Sci. Technol. 17, 1128 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
591.
1980

Gossard A. C.

Summary Abstract: Electrical transport properties of novel semiconductor barriers with graded interfaces
J. Vac. Sci. Technol. 17, 1102 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
592.
1980

Colvard C.; Merlin R.; Klein M. V.; Gossard A. C.

Observation of folded acoustic phonons in a semiconductor superlattice
Phys. Rev. Lett. 45, 298 (1980)
Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801;
593.
1980

Miller R. C.; Nordland W. A.; Kleinman D. A.; Gossard A. C.

Luminescence studies of optically pumped quantum wells in GaAs‐Al;xGa1-;xAs multilayer structures
Phys. Rev. B 22, 863 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
594.
1980

Allyn C. L.; Gossard A. C.; Wiegmann W.

New rectifying semiconductor structure by molecular beam epitaxy
Appl. Phys. Lett. 36, 373 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
595.
1980

Tsui D. C.; Störmer H. L.; Gossard A. C.; Wiegmann W.

Two‐dimensional electrical transport in GaAs‐Al;xGa1-;xAs multilayers at high magnetic fields
Phys. Rev. B 21, 1589 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
596.
1980

Tsui D. C.; Englert Th.; Cho A. Y.; Gossard A. C.

Observation of magnetophonon resonances in a two‐dimensional electronic system
Phys. Rev. Lett. 44, 341 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
597.
1980

Fleming R. M.; McWhan D. B.; Gossard A. C.; Wiegmann W.; Logan R. A.

X‐ray diffraction study of interdiffusion and growth in (GaAs);n(AlAs)m multilayers
J. Appl. Phys. 51, 357 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
598.
1980

Merlin R.; Colvard C.; Klein M. V.; Morkoc H.; Cho A. Y.; Gossard A. C.

Raman scattering in superlattices: Anisotropy of polar phonons
Appl. Phys. Lett. 36, 43 (1980)
Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Ilinois, 61801;

Co-authors

Co-publications
61

Campman, KL
52

Ensslin, Klaus
52

Driscoll, Daniel C.
46

Hanson, Micah P.
46

Maranowski, Kevin D.
41

Awschalom, David D.
38

Marcus, Charles M.
38

Merz, James
36

Westervelt, Robert M.
36

Ihn, Thomas
30

Hanson, M
26

Holtz, P.-O.
26

Chemla, Daniel S.
22

Miller, David A. B.
21

Tsui, Daniel C.