Computed
Bookmark
III-V semiconductors
Quantum dots
Semiconductor lasers; laser d...
Design of specific laser syst...
Quantum well devices
Quantum wells
Molecular, atomic, ion, and c...
Electron states and collectiv...
Spectroscopy of solid state d...
Excitons and related phenomena
Tunneling
Photoconduction and photovolt...
1.
Bhattacharyya J.; Wagner M.; Helm M.; Hopkinson M.; Wilson L. R.; Schneider H.
Direct Evidence Of Long Lived Trapped Carriers In InGaAs/GaAs Quantum Dots Studied Using Terahertz‐activated Luminescence Measurements
2.
Wu Yanwen; Piper I. M.; Ediger M.; Brereton P.; Schmidgall E. R.; Phillips R. T.; Eastham P. R.; Hugues M.; Hopkinson M.
Adiabatic rapid passage on a single exciton
3.
Ediger M.; Wilson A. M.; Piper I. M.; Phillips R. T.; Hugues M.; Hopkinson M.
3D g‐Factor Mapping: Fine Structure Effects in Single Quantum Dots
Flash Player Required
4.
Brossard F. S. F.; Xu X. L.; Williams D. A.; Hadjipanayi M.; Hugues M.; Hopkinson M.; Wang X.; Taylor R. A.
Strongly coupled single quantum dot in a photonic crystal waveguide cavity
5.
Shafi M.; Mari R. H.; Khatab A.; Henini M.; Polimeni A.; Capizzi M.; Hopkinson M.
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy
6.
Nuytten T.; Hayne M.; Bansal Bhavtosh; Liu H. Y.; Hopkinson M.; Moshchalkov V. V.
Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells
7.
Jin C. Y.; Kojima O.; Kita T.; Wada O.; Hopkinson M.
Observation of phase shifts in a vertical cavity quantum dot switch
8.
Latkowska M.; Kudrawiec R.; Sęk G.; Misiewicz J.; Ibáñez J.; Henini M.; Hopkinson M.
Thermal quenching of single localized excitons in GaInNAs layers
9.
Wu Yanwen; Piper I. M.; Ediger M.; Brereton P.; Schmidgall E. R.; Eastham P. R.; Hugues M.; Hopkinson M.; Phillips R. T.
Population Inversion in a Single InGaAs Quantum Dot Using the Method of Adiabatic Rapid Passage
10.
Mar J. D.; Xu X. L.; Sandhu J. S.; Irvine A. C.; Hopkinson M.; Williams D. A.
Electrical control of fine-structure splitting in self-assembled quantum dots for entangled photon pair creation
11.
12.
Breuer Stefan; Rossetti Mattia; Elsässer Wolfgang; Drzewietzki Lukas; Bardella Paolo; Montrosset Ivo; Krakowski Michel; Hopkinson Mark
Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser
13.
Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots
14.
King P. D. C.; Veal T. D.; McConville C. F.; Zúñiga-Pérez J.; Muñoz-Sanjosé V.; Hopkinson M.; Rienks E. D. L.; Jensen M. Fuglsang; Hofmann Ph.
Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers
15.
Jin C. Y.; Ohta S.; Hopkinson M.; Kojima O.; Kita T.; Wada O.
Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
16.
Collins R. J.; Clarke P. J.; Fernández V.; Gordon K. J.; Makhonin M. N.; Timpson J. A.; Tahraoui A.; Hopkinson M.; Fox A. M.; Skolnick M. S.; Buller G. S.
Quantum key distribution system in standard telecommunications fiber using a short wavelength single photon source
17.
Bastiman F.; Cullis A. G.; Hopkinson M.; Briston K. J.
Two step optimized process for scanning tunneling microscopy tip fabrication
18.
Jang Y. D.; Park J.; Lee D.; Mowbray D. J.; Skolnick M. S.; Liu H. Y.; Hopkinson M.; Hogg R. A.
Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots
19.
Haxha V.; Drouzas I.; Ulloa J. M.; Bozkurt M.; Koenraad P. M.; Mowbray D. J.; Liu H. Y.; Steer M. J.; Hopkinson M.; Migliorato M. A.
Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer
20.
Herrera M.; Zhang S. B.; Hopkinson M.; Du M.-H.; Garcia R.; Galindo P.; Yáñez A.; Pizarro J.; Gonzalez D.; Morgan D. G.; Ramasse Q. M.; Browning N. D.
Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
21.
Sanchez A. M.; Beanland R.; Hasbullah N. F.; Hopkinson M.; David J. P. R.
Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures
22.
Jin C. Y.; Kojima O.; Kita T.; Wada O.; Hopkinson M.; Akahane K.
Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity
23.
Boyle S. J.; Ramsay A. J.; Fox A. M.; Skolnick M. S.; Heberle A. P.; Hopkinson M.
Beating of Exciton-Dressed States in a Single Semiconductor InGaAs/GaAs Quantum Dot
24.
Makhonin M. N.; Skiba-Szymanska J.; Skolnick M. S.; Liu H.-Y.; Hopkinson M.; Tartakovskii A. I.
Voltage-controlled nuclear polarization switching in a single InxGa1-x;As quantum dot
25.
Nabavi E.; Badcock T. J.; Nuytten T.; Liu H. Y.; Hopkinson M.; Moshchalkov V. V.; Mowbray D. J.
Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots
26.
Zhang S. Y.; Revin D. G.; Cockburn J. W.; Kennedy K.; Krysa A. B.; Hopkinson M.
λ∼3.1 μ;m room temperature InGaAs/AlAsSb/InP quantum cascade lasers
27.
Patanè A.; Allison G.; Eaves L.; Kozlova N. V.; Zhuang Q. D.; Krier A.; Hopkinson M.; Hill G.
Electron coherence length and mobility in highly mismatched III-N-V alloys
28.
Jin C. Y.; Liu H. Y.; Jiang Q.; Hopkinson M.; Wada O.
Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels
29.
Jang Y. D.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Park J.; Lee D.; Liu H. Y.; Hopkinson M.; Hogg R. A.; Andreev A. D.
Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots
30.
Ulloa J. M.; Koenraad P. M.; Hopkinson M.
Structural properties of GaAsN/;GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy
31.
Makhonin M. N.; Tartakovskii A. I.; Ebbens A.; Skolnick M. S.; Russell A.; Fal'ko V. I.; Hopkinson M.
Nuclear spin pumping under resonant optical excitation in a quantum dot
32.
Chia C. K.; Suryana M.; Zhao W.; Low H. Y.; Hopkinson M.
Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO2 strips imprinted by soft mold technique
33.
Boyle S. J.; Ramsay A. J.; Bello F.; Liu H. Y.; Hopkinson M.; Fox A. M.; Skolnick M. S.
Two-qubit conditional quantum-logic operation in a single self-assembled quantum dot
34.
Thompson Jamie D. W.; Neal James R.; Shen Tiehan H.; Morton Simon A.; Tobin James G.; Dan Waddill G.; Matthew Jim A. D.; Greig Denis; Hopkinson Mark
The evolution of Ga and As core levels in the formation of Fe/;GaAs (001); A high resolution soft x-ray photoelectron spectroscopic study
35.
Spasov S.; Allison G.; Patanè A.; Eaves L.; Tretyakov M. Yu.; Ignatov A.; Hopkinson M.; Hill G.
High field electron dynamics in dilute nitride Ga(AsN)
36.
Jang Y. D.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Park J.; Lee D.; Liu H. Y.; Steer M. J.; Hopkinson M.
Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer
37.
Ramsay A. J.; Boyle S. J.; Kolodka R. S.; Oliveira J. B. B.; Skiba-Szymanska J.; Liu H. Y.; Hopkinson M.; Fox A. M.; Skolnick M. S.
Fast Optical Preparation, Control, and Readout of a Single Quantum Dot Spin
38.
Monte A. F. G.; Qu Fanyao; Hopkinson M.
Anomalous photocurrent in self-assembled InAs/;GaAs quantum dots
39.
Makhonin M. N.; Tartakovskii A. I.; Van'kov A. B.; Drouzas I.; Wright T.; Skiba-Szymanska J.; Russell A.; Fal'ko V. I.; Skolnick M. S.; Liu H.-Y.; Hopkinson M.
Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
40.
Allison G.; Spasov S.; Patanè A.; Eaves L.; Kozlova N. V.; Freudenberger J.; Hopkinson M.; Hill G.
Electron effective mass and Si-donor binding energy in GaAs1-x;Nx probed by a high magnetic field
41.
Zibik E. A.; Grange T.; Carpenter B. A.; Ferreira R.; Bastard G.; Vinh N. Q.; Phillips P. J.; Steer M. J.; Hopkinson M.; Cockburn J. W.; Skolnick M. S.; Wilson L. R.
Intersublevel polaron dephasing in self-assembled quantum dots
42.
Aivaliotis P.; Zibik E. A.; Wilson L. R.; Cockburn J. W.; Hopkinson M.; Vinh N. Q.
Two photon absorption in quantum dot-in-a-well infrared photodetectors
43.
Beanland R.; Sánchez A. M.; Childs D.; Groom K. M.; Liu H. Y.; Mowbray D. J.; Hopkinson M.
Structural analysis of life tested 1.3 μ;m quantum dot lasers
44.
Aivaliotis P.; Menzel S.; Zibik E. A.; Cockburn J. W.; Wilson L. R.; Hopkinson M.
Energy level structure and electron relaxation times in InAs/;InxGa1-x;As quantum dot-in-a-well structures
45.
Aivaliotis P.; Zibik E. A.; Wilson L. R.; Cockburn J. W.; Hopkinson M.; Airey R. J.
Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12 μ;m atmospheric window via rapid thermal annealing
46.
Spasov S.; Allison G.; Patanè A.; Ignatov A.; Eaves L.; Maude D. K.; Hopkinson M.; Airey R.
Magnetic field tuning of hot electron resonant capture in a semiconductor device
47.
Stevens B. J.; Childs D. T. D.; Groom K. M.; Hopkinson M.; Hogg R. A.
All semiconductor swept laser source utilizing quantum dots
48.
Zhang Z. Y.; Luxmoore I. J.; Jin C. Y.; Liu H. Y.; Jiang Q.; Groom K. M.; Childs D. T.; Hopkinson M.; Cullis A. G.; Hogg R. A.
Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes
49.
Jin C. Y.; Liu H. Y.; Groom K. M.; Jiang Q.; Hopkinson M.; Badcock T. J.; Royce R. J.; Mowbray D. J.
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/;GaAs quantum dot lasers
50.
Merrick M.; Cripps S. A.; Murdin B. N.; Hosea T. J. C.; Veal T. D.; McConville C. F.; Hopkinson M.
Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity
51.
Daraei A.; Sanvitto D.; Timpson J. A.; Fox A. M.; Whittaker D. M.; Skolnick M. S.; Guimarães P. S. S.; Vinck H.; Tahraoui A.; Fry P. W.; Liew S. L.; Hopkinson M.
Control of polarization and mode mapping of small volume high Q micropillars
52.
Astratov V. N.; Yang S.; Lam S.; Jones B. D.; Sanvitto D.; Whittaker D. M.; Fox A. M.; Skolnick M. S.; Tahraoui A.; Fry P. W.; Hopkinson M.
Whispering gallery resonances in semiconductor micropillars
53.
Kolodka R. S.; Ramsay A. J.; Fry P. W.; Ng W. K.; Tahraoui A.; Liu H. Y.; Hopkinson M.; Fox A. M.; Skolnick M. S.
Coherent control of single quantum dot exciton embedded in a photodiode
54.
Hopkins J.-M.; Preston R. D.; Maclean A. J.; Calvez S.; Sun H.; Ng J.; Steer M.; Hopkinson M.; Burns D.
High performance 2.2 μm optically-pumped vertical external-cavity surface-emitting laser
55.
Revin D. G.; Cockburn J. W.; Steer M. J.; Airey R. J.; Hopkinson M.; Krysa A. B.; Wilson L. R.; Menzel S.
Improved performance of In0.6Ga0.4As/;AlAs0.67Sb0.33/;InP quantum cascade lasers by introduction of AlAs barriers in the active regions
56.
Jin C. Y.; Liu H. Y.; Zhang S. Y.; Jiang Q.; Liew S. L.; Hopkinson M.; Badcock T. J.; Nabavi E.; Mowbray D. J.
Optical transitions in type-II InAs/;GaAs quantum dots covered by a GaAsSb strain-reducing layer
57.
Ho Y.-L. D.; Hopkinson M.; Skolnick M. S.; Fox A. M.; Timpson J. A.; Heard P. J.; Rarity J. G.; Cryan M. J.; Hu C. Y.; Gibson R.; Tahraoui A.
Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials
58.
Ibáñez J.; Alarcón-Lladó E.; Cuscó R.; Artús L.; Hopkinson M.
Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering
59.
Chalcraft A. R. A.; Lam S.; O'Brien D.; Krauss T. F.; Sahin M.; Szymanski D.; Sanvitto D.; Oulton R.; Skolnick M. S.; Fox A. M.; Whittaker D. M.; Liu H.-Y.; Hopkinson M.
Mode structure of the L3 photonic crystal cavity
60.
Ulloa J. M.; Drouzas I. W. D.; Koenraad P. M.; Mowbray D. J.; Steer M. J.; Liu H. Y.; Hopkinson M.
Suppression of InAs/;GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
61.
Zibik E. A.; Ng W. H.; Wilson L. R.; Skolnick M. S.; Cockburn J. W.; Gutierrez M.; Steer M. J.; Hopkinson M.
Effects of alloy intermixing on the lateral confinement potential in InAs/;GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy
62.
Whittaker D. M.; Guimaraes P. S. S.; Sanvitto D.; Vinck H.; Lam S.; Daraei A.; Timpson J. A.; Fox A. M.; Skolnick M. S.; Ho Y.-L. D.; Rarity J. G.; Hopkinson M.; Tahraoui A.
High Q modes in elliptical microcavity pillars
63.
Ulloa J. M.; Çelebi C.; Koenraad P. M.; Simon A.; Gapihan E.; Letoublon A.; Bertru N.; Drouzas I.; Mowbray D. J.; Steer M. J.; Hopkinson M.
Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots
64.
Badcock T. J.; Mowbray D. J.; Nabavi E.; Liu H. Y.; Steer M. J.; Hopkinson M.; Hayne M.; Nuytten T.; Moshchalkov V. V.
Electronic Structure of Long Wavelength (>1.3μm) GaAsSb‐capped InAs Quantum Dots
65.
InGaAs/;AlAsSb/;InP strain compensated quantum cascade lasers
66.
Allison G.; Spasov S.; Patanè A.; Eaves L.; Ignatov A.; Maude D. K.; Hopkinson M.; Airey R.
Magnetophonon oscillations in the negative differential conductance of dilute nitride GaAs1-x;Nx submicron diodes
67.
Ramsay A. J.; Kolodka R. S.; Bello F.; Fry P. W.; Ng W. K.; Tahraoui A.; Liu H. Y.; Hopkinson M.; Whittaker D. M.; Fox A. M.; Skolnick M. S.
Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse
68.
Ng J. S.; Soong W. M.; Steer M. J.; Hopkinson M.; David J. P. R.; Chamings J.; Sweeney S. J.; Adams A. R.
Long wavelength bulk GaInNAs p-i-n; photodiodes lattice matched to GaAs
69.
Badcock T. J.; Royce R. J.; Mowbray D. J.; Skolnick M. S.; Liu H. Y.; Hopkinson M.; Groom K. M.; Jiang Q.
Low threshold current density and negative characteristic temperature 1.3 μ;m InAs self-assembled quantum dot lasers
70.
Ng W. H.; Zibik E. A.; Soulby M. R.; Wilson L. R.; Cockburn J. W.; Liu H. Y.; Steer M. J.; Hopkinson M.
Broadband quantum cascade laser emitting from 7.7 ;to 8.4 μ;m operating up to 340 ;K
71.
Zervos C.; Frogley M. D.; Phillips C. C.; Kundys D. O.; Wilson L. R.; Hopkinson M.; Skolnick M. S.
All-optical switching in quantum cascade lasers
72.
Tartakovskii A. I.; Wright T.; Russell A.; Fal'ko V. I.; Van'kov A. B.; Skiba-Szymanska J.; Drouzas I.; Kolodka R. S.; Skolnick M. S.; Fry P. W.; Tahraoui A.; Liu H.-Y.; Hopkinson M.
Nuclear Spin Switch in Semiconductor Quantum Dots
73.
InGaAs/;AlAsSb/;InP quantum cascade lasers operating at wavelengths close to 3 μ;m
74.
Timpson J. A.; Sanvitto D.; Daraei A.; Guimaraes P. S. S.; Vinck H.; Lam S.; Whittaker D. M.; Skolnick M. S.; Fox A. M.; Hu C. Y.; Ho Y. -L. D.; Gibson R.; Rarity J. G.; Pellegrini S.; Gordon K. J.; Warburton R. E.; Buller G. S.; Tahraoui A.; Fry P. W.; Hopkinson M.
Single photon sources based upon single quantum dots in semiconductor microcavity pillars
75.
Smowton P. M.; Sandall I. C.; Liu H. Y.; Hopkinson M.
Gain in p-doped quantum dot lasers
76.
Lim A. C. H.; Gupta R.; Haywood S. K.; Steer M. J.; Hopkinson M.; Hill G.
Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-x;Nx/;GaAs(x<1%); stepped quantum well
77.
Ray S. K.; Groom K. M.; Alexander R.; Kennedy K.; Liu H. Y.; Hopkinson M.; Hogg R. A.
Design, growth, fabrication, and characterization of InAs/;GaAs1.3 μ;m quantum dot broadband superluminescent light emitting diode
78.
Ibáñez J.; Kudrawiec R.; Misiewicz J.; Schmidbauer M.; Henini M.; Hopkinson M.
Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction
79.
Zervos C.; Frogley M. D.; Phillips C. C.; Kundys D. O.; Wilson L. R.; Cockburn J. W.; Hopkinson M.; Skolnick M. S.
Coherent near-infrared wavelength conversion in semiconductor quantum cascade lasers
80.
Mu Xiaodong; Ding Yujie J.; Ooi Boon S.; Hopkinson Mark
Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs/;GaAs quantum wells based on time-resolved pump and probe differential photoluminescence
81.
Carpenter B. A.; Zibik E. A.; Sadowski M. L.; Wilson L. R.; Whittaker D. M.; Cockburn J. W.; Skolnick M. S.; Potemski M.; Steer M. J.; Hopkinson M.
Intraband magnetospectroscopy of singly and doubly charged n-type self-assembled quantum dots
82.
Sandall I. C.; Smowton P. M.; Thomson J. D.; Badcock T.; Mowbray D. J.; Liu H.-Y.; Hopkinson M.
Temperature dependence of threshold current in p-doped quantum dot lasers
83.
Spasov S.; Allison G.; Patanè A.; Eaves L.; Hopkinson M.; Airey R.
Modifying the electronic properties of GaAs/;AlAs superlattices with low-density nitrogen doping
84.
Liu H. Y.; Liew S. L.; Badcock T.; Mowbray D. J.; Skolnick M. S.; Ray S. K.; Choi T. L.; Groom K. M.; Stevens B.; Hasbullah F.; Jin C. Y.; Hopkinson M.; Hogg R. A.
p-doped 1.3 μ;mInAs/;GaAs quantum-dot laser with a low threshold current density and high differential efficiency
85.
Zibik E. A.; Adawi A. M.; Wilson L. R.; Lemaître A.; Cockburn J. W.; Hopkinson M.; Hill G.
Intra-valence band transitions in self-assembled InAs/;GaAs quantum dots studied using photocurrent spectroscopy
86.
Allison G.; Mori N.; Patanè A.; Endicott J.; Eaves L.; Maude D. K.; Hopkinson M.
Strong Effect of Resonant Impurities on Landau-Level Quantization
87.
Gutiérrez M.; Herrera M.; González D.; García R.; Hopkinson M.
Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
88.
Liu H. Y.; Tey C. M.; Jin C. Y.; Liew S. L.; Navaretti P.; Hopkinson M.; Cullis A. G.
Effects of growth temperature on the structural and optical properties of 1.6 μ;mGaInNAs/;GaAs multiple quantum wells
89.
Tartakovskii A. I.; Kolodka R. S.; Liu H. Y.; Migliorato M. A.; Hopkinson M.; Makhonin M. N.; Mowbray D. J.; Skolnick M. S.
Exciton fine structure splitting in dot-in-a-well structures
90.
Zibik E. A.; Ng W. H.; Revin D. G.; Wilson L. R.; Cockburn J. W.; Groom K. M.; Hopkinson M.
Broadband 6 ;μ;m<λ<8 ;μ;m superluminescent quantum cascade light-emitting diodes
91.
Sandall I. C.; Smowton P. M.; Walker C. L.; Badcock T.; Mowbray D. J.; Liu H. Y.; Hopkinson M.
The effect of p doping in InAs quantum dot lasers
92.
Sellers I. R.; Mowbray D. J.; Badcock T. J.; Wells J.-P. R.; Phillips P. J.; Carder D. A.; Liu H. Y.; Groom K. M.; Hopkinson M.
Infrared modulated interlevel spectroscopy of 1.3 μ;m self-assembled quantum dot lasers using a free electron laser
93.
Liu H. Y.; Steer M. J.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Suarez F.; Ng J. S.; Hopkinson M.; David J. P. R.
Room-temperature 1.6 μ;m light emission from InAs/;GaAs quantum dots with a thin GaAsSb cap layer
94.
Daraei A.; Tahraoui A.; Sanvitto D.; Timpson J. A.; Fry P. W.; Hopkinson M.; Guimarães P. S. S.; Vinck H.; Whittaker D. M.; Skolnick M. S.; Fox A. M.
Control of polarized single quantum dot emission in high-quality-factor microcavity pillars
95.
Veal T. D.; Piper L. F. J.; Jefferson P. H.; Mahboob I.; McConville C. F.; Merrick M.; Hosea T. J. C.; Murdin B. N.; Hopkinson M.
Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
96.
Krizhanovskii D. N.; Ebbens A.; Tartakovskii A. I.; Pulizzi F.; Wright T.; Skolnick M. S.; Hopkinson M.
Individual neutral and charged InxGa1-x;As-GaAs quantum dots with strong in-plane optical anisotropy
97.
Liu H. Y.; Tey C. M.; Sellers I. R.; Hopkinson M.; Beanland R.; Skolnick M. S.; Mowbray D. J.; Badcock T. J.; Cullis A. G.
Mechanism for improvements of optical properties of 1.3-μ;mInAs/;GaAs quantum dots by a combined InAlAs–;InGaAs cap layer
98.
Sánchez A. M.; Beanland R.; Gass M. H.; Papworth A. J.; Goodhew P. J.; Hopkinson M.
Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra
99.
Ebbens A.; Krizhanovskii D. N.; Tartakovskii A. I.; Pulizzi F.; Wright T.; Savelyev A. V.; Skolnick M. S.; Hopkinson M.
Optical orientation and control of spin memory in individual InGaAs quantum dots
100.
Rybchenko S. I.; Itskevich I. E.; Skolnick M. S.; Cahill J.; Tartakovskii A. I.; Hill G.; Hopkinson M.
Tuning of electronic coupling between self-assembled quantum dots
101.
Endicott J.; Patanè A.; Maude D.; Eaves L.; Hopkinson M.; Hill G.
Effect of hydrostatic pressure on the fragmented conduction band structure of dilute Ga(AsN) alloys
102.
Herrera M.; Gutierrez M.; Liu H. Y.; Hopkinson M.; García R.; Lozano J. G.; González D.; Navaretti P.
Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy
103.
Lim A. C. H.; Gupta R.; Haywood S. K.; Stavrinou P. N.; Hopkinson M.; Hill G.
Determination Of InAsP/InP And InGaAs/InP Band Offsets Using Blue Shifting Type II Asymmetric Multiple Quantum Wells
104.
Rybchenko S. I.; Itskevich I. E.; Cahill J.; Tartakovskii A. I.; Skolnick M. S.; Hill G.; Hopkinson M.
Electronic Coupling between Self‐Assembled Quantum Dots Tuned by High Pressure
105.
Patanè A.; Endicott J.; Ibáñez J.; Eaves L.; Hopkinson M.
Dilute Nitride Ga(AsN) Alloys; an ;Unusual Band Structure Probed by Magneto‐Tunneling
106.
Sellers I. R.; Liu H. Y.; Mowbray D. J.; Badcock T. J.; Groom K. M.; Hopkinson M.; Gutiérrez M.; Skolnick M. S.; Beanland R.; Childs D. T.; Robbins D. J.
Growth and Characterization of 1.3μm Multi‐Layer Quantum Dots Lasers Incorporating High Growth Temperature Spacer Layers
107.
Patanè A.; Endicott J.; Ibáñez J.; Brunkov P. N.; Eaves L.; Healy S. B.; Lindsay A.; O'Reilly E. P.; Hopkinson M.
Breakup of the conduction band structure of dilute GaAs1-y;Ny alloys
108.
Sanvitto D.; Daraei A.; Tahraoui A.; Hopkinson M.; Fry P. W.; Whittaker D. M.; Skolnick M. S.
Observation of ultrahigh quality factor in a semiconductor microcavity
109.
Liu H. Y.; Steer M. J.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Navaretti P.; Groom K. M.; Hopkinson M.; Hogg R. A.
Long-wavelength light emission and lasing from InAs/;GaAs quantum dots covered by a GaAsSb strain-reducing layer
110.
Herrera M.; González D.; Hopkinson M.; Gutiérrez M.; Navaretti P.; Liu H. Y.; García R.
Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory
111.
Liu H. Y.; Soong W. M.; Navaretti P.; Hopkinson M.; David J. P. R.
Enhanced optical and structural properties of 1.3 μ;mGaInNAs/;GaAs multiple quantum-well heterostructures with stepped strain-mediating layers
112.
Ray Sumon K.; Groom Kristian M.; Hogg Richard A.; Liu Hui-Yun; Sellers Ian R.; Hopkinson Mark; Badcock Tom J.; Ramsay Andrew J.; Mowbray David J.; Skolnick Maurice S.
Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 $\mu$m Quantum Dot Lasers
113.
Bollet F.; Gillin W. P.; Hopkinson M.; Gwilliam R.
Concentration dependent interdiffusion in InGaAs/;GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy
114.
Finley J. J.; Cullis A. G.; Liew S. L.; Skolnick M. S.; Mowbray D. J.; Tartakovskii A. I.; Oulton R.; Abstreiter G.; Vogl P.; Sabathil M.; Hopkinson M.
Quantum-confined Stark shifts of charged exciton complexes in quantum dots
115.
Tartakovskii A. I.; Makhonin M. N.; Sellers I. R.; Cahill J.; Andreev A. D.; Whittaker D. M.; Wells J-P. R.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Groom K. M.; Steer M. J.; Liu H. Y.; Hopkinson M.
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
116.
Migliorato M. A.; Powell D.; Liew S. L.; Cullis A. G.; Navaretti P.; Steer M. J.; Hopkinson M.; Fearn M.; Jefferson J. H.
Influence of composition on the piezoelectric effect and on the conduction band energy levels of InxGa1-x;As/;GaAs quantum dots
117.
Sun H. D.; Clark A. H.; Liu H. Y.; Hopkinson M.; Calvez S.; Dawson M. D.; Qiu Y. N.; Rorison J. M.
Optical characteristics of 1.55 μ;m GaInNAs multiple quantum wells
118.
Revin D. G.; Wilson L. R.; Zibik E. A.; Green R. P.; Cockburn J. W.; Steer M. J.; Airey R. J.; Hopkinson M.
InGaAs/;AlAsSb quantum cascade lasers
119.
Zibik E. A.; Steer M. J.; Skolnick M. S.; Cockburn J. W.; Wells J-P. R.; Carder D. A.; Phillips P. J.; Ferreira R.; Bastard G.; Green R. P.; Wilson L. R.; Hopkinson M.
Intraband relaxation via polaron decay in InAs self-assembled quantum dots
120.
Tartakovskii A. I.; Makhonin M. N.; Cahill J.; Whittaker D. M.; Wells J-P. R.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Steer M. J.; Groom K. M.; Hopkinson M.
Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques
121.
Veal T. D.; Mahboob I.; Piper L. F. J.; McConville C. F.; Hopkinson M.
Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1-x; alloys
122.
Liu H. Y.; Sellers I. R.; Gutiérrez M.; Groom K. M.; Soong W. M.; Hopkinson M.; David J. P. R.; Beanland R.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.
Influences of the spacer layer growth temperature on multilayer InAs/;GaAs quantum dot structures
123.
Liu H. Y.; Sellers I. R.; Badcock T. J.; Mowbray D. J.; Skolnick M. S.; Groom K. M.; Gutiérrez M.; Hopkinson M.; Ng J. S.; David J. P. R.; Beanland R.
Improved performance of 1.3 μ;m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
124.
Tartakovskii A. I.; Cahill J.; Makhonin M. N.; Whittaker D. M.; Wells J-P. R.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Groom K. M.; Steer M. J.; Hopkinson M.
Dynamics of Coherent and Incoherent Spin Polarizations in Ensembles of Quantum Dots
125.
Veal T. D.; McConville C. F.; Piper L. F. J.; Mahboob I.; Hopkinson M.
Fuchs–Kliewer phonon excitations in GaNAs alloys
126.
Revin D. G.; Rouillard Y.; Barate D.; Wilson L. R.; Carder D. A.; Cockburn J. W.; Steer M. J.; Hopkinson M.; Airey R.; Garcia M.; Sirtori C.; Vicet A.
Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations
127.
Oulton R.; Skolnick M. S.; Mowbray D. J.; Finley J. J.; Cahill J.; Ebbens A.; Tartakovskii A. I.; Hopkinson M.
Temperature-induced carrier escape processes studied in absorption of individual InxGa1-x;As quantum dots
128.
λ∼4–5.3 μ;m intersubband emission from InGaAs–AlAsSb quantum cascade structures
129.
Ibáñez J.; Tarhan Enver; Ramdas A. K.; Hernández S.; Cuscó R.; Artús L.; Melloch M. R.; Hopkinson M.
Direct observation of LO phonon-plasmon coupled modes in the infrared transmission spectra of n-GaAs and n-InxGa1-x;As epilayers
130.
Summers Huw D.; Matthews Daniel R.; Rees Paul; Smowton Peter M.; Hopkinson Mark
Laser dynamics in self-pulsating quantum dot systems
131.
Oulton R.; Finley J. J.; Tartakovskii A. I.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Vasanelli A.; Ferreira R.; Bastard G.
Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots
132.
Liu H. Y.; Hopkinson M.; Navaretti P.; Gutierrez M.; Ng J. S.; David J. P. R.
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer
133.
Sellers I. R.; Liu H. Y.; Hopkinson M.; Mowbray D. J.; Skolnick M. S.
1.3 μm lasers with AlInAs-capped self-assembled quantum dots
134.
Liu H. Y.; Sellers I. R.; Hopkinson M.; Harrison C. N.; Mowbray D. J.; Skolnick M. S.
Engineering carrier confinement potentials in 1.3-μ;m InAs/GaAs quantum dots with InAlAs layers; Enhancement of the high-temperature photoluminescence intensity
135.
Luna E.; Hopkinson M.; Ulloa J. M.; Guzmán A.; Muñoz E.
Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared
136.
Lada M.; Cullis A. G.; Parbrook P. J.; Hopkinson M.
Metastable rocksalt phase in epitaxial GaN on sapphire
137.
Endicott J.; Patanè A.; Ibáñez J.; Eaves L.; Bissiri M.; Hopkinson M.; Airey R.; Hill G.
Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells
138.
Haywood S. K.; Lim A. C. H.; Gupta R.; Hopkinson M.; Stavrinou P. N.; Hewer V.; Hogg J. H. C.; Emery S.; Hill G.
Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells
139.
Chia C. K; Ng B. K.; David J. P. R.; Rees G. J.; Tozer R. C.; Hopkinson M.; Airey R. J.; Robson P. N.
Multiplication and excess noise in AlxGa1-x;As/GaAs multilayer avalanche photodiodes
140.
Adawi A. M.; Zibik E. A.; Wilson L. R.; Lemaître A.; Cockburn J. W.; Skolnick M. S.; Hopkinson M.; Hill G.
Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots
141.
Bristow A. D.; Whittaker D. M.; Astratov V. N.; Skolnick M. S.; Tahraoui A.; Krauss T. F.; Hopkinson M.; Croucher M. P.; Gehring G. A.
Defect states and commensurability in dual-period AlxGa1-x;As photonic crystal waveguides
142.
Jacobs S. E. J.; Kemerink M.; Koenraad P. M.; Hopkinson M.; Salemink H. W. M.; Wolter J. H.
Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots
143.
Bruls D. M.; Koenraad P. M.; Salemink H. W. M.; Wolter J. H.; Hopkinson M.; Skolnick M. S.
Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy
144.
Liu H. Y.; Hopkinson M.
Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer
145.
Adawi A. M.; Zibik E. A.; Wilson L. R.; Lemaître A.; Cockburn J. W.; Skolnick M. S.; Hopkinson M.; Hill G.; Liew S. L.; Cullis A. G.
Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots
146.
Carder D. A.; Wilson L. R.; Green R. P.; Cockburn J. W.; Hopkinson M.; Steer M. J.; Airey R.; Hill G.
Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser
147.
On the diffusion of lattice matched InGaAs/InP microstructures
148.
Monte A. F. G.; Finley J. J.; Ashmore A. D.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.
Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers
149.
Liu H. Y.; Hopkinson M.; Harrison C. N.; Steer M. J.; Frith R.; Sellers I. R.; Mowbray D. J.; Skolnick M. S.
Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure
150.
Matthews D. R.; Summers H. D.; Smowton P. M.; Hopkinson M.
Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers
151.
Harrison C. N.; David J. P. R.; Hopkinson M.; Rees G. J.
Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes
152.
Tartakovskii A. I.; Groom K. M.; Adawi A. M.; Lemaître A.; Fox A. M.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.
Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments
153.
Smowton P. M.; Pearce E. J.; Schneider H. C.; Chow W. W.; Hopkinson M.
Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers
154.
Finley J. J.; Mowbray D. J.; Skolnick M. S.; Ashmore A. D.; Baker C.; Monte A. F. G.; Hopkinson M.
Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots
155.
Bruls D. M.; Vugs J. W. A. M.; Koenraad P. M.; Salemink H. W. M.; Wolter J. H.; Hopkinson M.; Skolnick M. S.; Long Fei; Gill S. P. A.
Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy
156.
Wilson L. R.; Carder D. A.; Cockburn J. W.; Green R. P.; Revin D. G.; Steer M. J.; Hopkinson M.; Hill G.; Airey R.
Intervalley scattering in GaAs–AlAs quantum cascade lasers
157.
Cullis A.G.; Norris D.J.; Walther T.; Migliorato M.A.; Hopkinson M.
Stranski-Krastanow transition and epitaxial island growth
158.
Groom K. M.; Tartakovskii A. I.; Mowbray D. J.; Skolnick M. S.; Smowton P. M.; Hopkinson M.; Hill G.
Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement
159.
Gutiérrez M.; González D.; Aragón G.; Garcı´a R.; Hopkinson M.; Sánchez J. J.; Izpura I.
Strain relaxation behavior of InxGa1-x;As quantum wells on vicinal GaAs (111)B substrates
160.
Cuscó R.; Artús L.; Hernández S.; Ibáñez J.; Hopkinson M.
Raman scattering by LO phonon-plasmon coupled modes in n-type In0.53Ga0.47As
161.
Migliorato M. A.; Wilson L. R.; Mowbray D. J.; Skolnick M. S.; Al-Khafaji M.; Cullis A. G.; Hopkinson M.
Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots
162.
Thomson J. D.; Blood P.; Herrmann E.; Smowton P. M.; Summers H. D.; Hopkinson M.
Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers
163.
Wölfl F.; Ryan J. F.; Fox A. M.; Ashmore A. D.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.
Intensity noise in quantum-dot laser diodes
164.
Fleischmann T.; Moran M.; Hopkinson M.; Meidia H.; Rees G. J.; Cullis A. G.; Sánchez-Rojas J. L.; Izpura I.
Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition
165.
Smowton P. M.; Herrmann E.; Ning Y.; Summers H. D.; Blood P.; Hopkinson M.
Optical mode loss and gain of multiple-layer quantum-dot lasers
166.
Lemaître A.; Ashmore A. D.; Finley J. J.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Krauss T. F.
Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots
167.
Finley J. J.; Fry P. W.; Ashmore A. D.; Lemaître A.; Tartakovskii A. I.; Oulton R.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Buckle P. D.; Maksym P. A.
Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot
168.
Walther T.; Cullis A. G.; Norris D. J.; Hopkinson M.
Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs
169.
Finley J. J.; Hopkinson M.; Maksym P. A.; Itskevich I. E.; Skolnick M. S.; Mowbray D. J.; Lemaître A.; Ashmore A. D.; Krauss T. F.
Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots
170.
Wilson L. R.; Cockburn J. W.; Steer M. J.; Carder D. A.; Skolnick M. S.; Hopkinson M.; Hill G.
Decreasing the emission wavelength of GaAs–AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers
171.
Ng B. K.; David J. P. R.; Plimmer S. A.; Hopkinson M.; Tozer R. C.; Rees G. J.
Impact ionization coefficients of Al0.8Ga0.2As
172.
Fry P. W.; Finley J. J.; Wilson L. R.; Lemaître A.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.; Clark J. C.
Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots
173.
Fry P. W.; Itskevich I. E.; Parnell S. R.; Finley J. J.; Wilson L. R.; Schumacher K. L.; Mowbray D. J.; Skolnick M. S.; Al-Khafaji M.; Cullis A. G.; Hopkinson M.; Clark J. C.; Hill G.
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
174.
Herrmann E.; Smowton P. M.; Summers H. D.; Thomson J. D.; Hopkinson M.
Modal gain and internal optical mode loss of a quantum dot laser
175.
Fry P. W.; Hill G.; Cullis A. G.; David J. P. R.; Al-Khafaji M.; Hopkinson M.; Maksym P. A.; Larkin I. A.; Wilson L. R.; O'Reilly E. P.; Barker J. A.; Finley J. J.; Skolnick M. S.; Mowbray D. J.; Itskevich I. E.; Clark J. C.
Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
176.
Fry P. W.; Harris L.; Parnell S. R.; Finley J. J.; Ashmore A. D.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.; Clark J. C.
Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
177.
Harris L.; Ashmore A. D.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.; Clark J.
Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
178.
Buckle P. D.; Dawson P.; Hall S. A.; Chen X.; Steer M. J.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.
Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots
179.
Itskevich I. E.; Skolnick M. S.; Mowbray D. J.; Trojan I. A.; Lyapin S. G.; Wilson L. R.; Steer M. J.; Hopkinson M.; Eaves L.; Main P. C.
Excited states and selection rules in self-assembled InAs/GaAs quantum dots
180.
Stallard W. G.; Plaut A. S.; Thoms S.; Holland M. C.; Beaumont S. P.; Stanley C. R.; Hopkinson M.
Strain-induced quantum confinement of electron gases: The observation of quantum dot levels
181.
Harris L.; Mowbray D. J.; Skolnick M. S.; Hopkinson M.; Hill G.
Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
182.
Parbrook P. J.; Ozanyan K. B.; Hopkinson M.; Whitehouse C. R.; Sobiesierski Z.; Westwood D. I.
Optical monitoring of InP monolayer growth rates
183.
Vodopyanov K. L.; O'Neill K.; Serapiglia G. B.; Phillips C. C.; Hopkinson M.; Vurgaftman I.; Meyer J. R.
Phase-matched second harmonic generation in asymmetric double quantum wells
184.
Li Y. B.; Cockburn J. W.; Skolnick M. S.; Duck J. P.; Birkett M. J.; Larkin I. A.; Grey R.; Hill G.; Hopkinson M.
Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure
185.
Li Y. B.; Cockburn J. W.; Duck J. P.; Birkett M. J.; Skolnick M. S.; Larkin I. A.; Hopkinson M.; Grey R.; Hill G.
Photoluminescence spectroscopy of intersubband population inversion in a GaAs/AlxGa1-x;As triple-barrier tunneling structure
186.
Dörr U.; Schwarz W.; Wörner A.; Westphäling R.; Dinger A.; Kalt H.; Mowbray D. J.; Hopkinson M.; Langbein W.
Optical properties of (AlxGa1-x;)0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor
187.
Wilson L. R.; Mowbray D. J.; Skolnick M. S.; Morifuji M.; Steer M. J.; Larkin I. A.; Hopkinson M.
Magneto-optical studies of self-organized InAs/GaAs quantum dots
188.
Johal T. K.; Barrett S. D.; Hopkinson M.; Weightman P.; Power J. R.
Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001)
189.
Mottahedeh R.; Prescott D.; Haywood S. K.; Pattison D. A.; Kean P. N.; Bennion I.; Hopkinson M.; Pate M.; Hart L.
Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple quantum well
190.
Ozanyan K. B.; Parbrook P. J.; Hopkinson M.; Whitehouse C. R.; Sobiesierski Z.; Westwood D. I.
In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy
191.
Ghin R.; David J. P. R.; Hopkinson M.; Pate M. A.; Rees G. J.; Robson P. N.
Impact ionization coefficients in GaInP p–i–n; diodes
192.
Brenchley M. E.; Hopkinson M.; Kelly A.; Kidd P.; Dunstan D. J.
Coherency Strain as an Athermal Strengthening Mechanism
193.
Mowbray David J.; Kowalski Olgierd P.; Cockburn John W.; Skolnick Maurice S.; Hopkinson Mark; David John P. R.
Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets
194.
Griffin Paul; Ballard Ian; Barnham Keith; Nelson Jenny; Zachariou Alexander; Button Chris; Hopkinson Mark; Pate Malcom
Advantages of quantum well solar cells for TPV
195.
Sobiesierski Z.; Westwood D. I.; Parbrook P. J.; Ozanyan K. B.; Hopkinson M.; Whitehouse C. R.
As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy
196.
Steer M. J.; Mowbray D. J.; Tribe W. R.; Skolnick M. S.; Sturge M. D.; Hopkinson M.; Cullis A. G.; Whitehouse C. R.; Murray R.
Electronic energy levels and energy relaxation mechanisms in self‐organized InAs/GaAs quantum dots
197.
Barnham Keith; Connolly James; Griffin Paul; Haarpaintner Guido; Nelson Jenny; Tsui Ernest; Zachariou Alexander; Osborne Jane; Button Chris; Hill Geoff; Hopkinson Mark; Pate Malcolm; Roberts John; Foxon Tom
Voltage enhancement in quantum well solar cells
198.
Kowalski O. P.; Wegerer R. M.; Mowbray D. J.; Skolnick M. S.; Button C. C.; Roberts J. S.; Hopkinson M.; David J. P. R.; Hill G.
Optical spectroscopic observation of spontaneous long range ordering in AlGaInP
199.
Greally M. G.; Hayne M.; Usher A.; Hill G.; Hopkinson M.
Low‐temperature mobility of two‐dimensional electrons in (Ga,In)As–(Al,In)As heterojunctions
200.
Vickers A. J.; Hassan M. A.; Mashakekhi H. R.; Griguoli A.; Hopkinson M.
Study of a backgated metal‐semiconductor‐metal photodetector
201.
Peggs D. W.; Skolnick M. S.; Whittaker D. M.; Hogg R. A.; Willcox A. R. K.; Mowbray D. J.; Grey R.; Rees G. J.; Hart L.; Hopkinson M.; Hill G.; Pate M. A.
Observation of Wannier‐Stark ladder transitions in In;xGa1-;xAs‐GaAs piezoelectric superlattices
202.
David J. P. R.; Hopkinson M.; Stavrinou P. N.; Haywood S. K.
Growth of InAsxP1-;x/InP multi‐quantum well structures by solid source molecular beam epitaxy
203.
DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Williams J. E.; Meehan K.; Kurtz Sarah R.; Olson J. M.; Schneider R. P.; Wu M. C.; Hopkinson M.
Band gap of ‘‘completely disordered’’ Ga;0.52In0.48P
204.
Yow H. K.; Houston P. A.; Hopkinson M.
Conduction band discontinuities in Ga0.5In0.5P‐Al;xGa0.5-;xIn0.5P heterojunctions measured by internal photoemission
205.
Kowalski O. P.; Cockburn J. W.; Mowbray D. J.; Skolnick M. S.; Teissier R.; Hopkinson M.
GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements
206.
Dawson Martin D.; Najda S. P.; Skolnick M. S.; Kowalski O. P.; Mowbray D. J.; Duggan Geoffrey; Kean Alistair H.; Hopkinson M.
Measurement of the direct energy gap of Al0.5In0.5P: Implications for the band discontinuity at Ga1-;xInxP/AlyIn1-;yP heterojunctions
207.
Mowbray D. J.; Kowalski O. P.; Hopkinson M.; Skolnick M. S.; David J. P. R.
Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy
208.
DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Williams J. E.; Meehan K.; Kurtz Sarah R.; Olson J. M.; Wu M. C.; Hopkinson M.
The band gap of ‘‘perfectly disordered’’ Ga;0.52In0.48P
209.
Mowbray D. J.; Kowalski O. P.; Skolnick M. S.; DeLong M. C.; Hopkinson M.; David J. P. R.; Cullis A. G.
Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells
210.
Ehrlich J. E.; Neilson D. T.; Walker A. C.; Kennedy G. T.; Grant R. S.; Sibbett W.; Hopkinson M.; Pate M.
Optical bistability in an InGaAs/InP multiple quantum well waveguide Fabry–Perot cavity
211.
DeLong M. C.; Mowbray D. J.; Hogg R. A.; Skolnick M. S.; Hopkinson M.; David J. P. R.; Taylor P. C.; Kurtz Sarah R.; Olson J. M.
Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P
212.
DeLong M. C.; Hogg R. A.; Mowbray D. J.; Hopkinson M.; Skolnick M. S.; Taylor P. C.; Olson J. M.; Kurtz Sarah R.; Kibbler A. E.
Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P
213.
DeLong Matthew C.; Viohl I.; Ohlsen W. D.; Taylor P. Craig; Dabkowski Ferdynand P.; Meehan Kathleen; Williams Jeannie E.; Hopkinson Mark
Microwave-modulated photoluminescence: technique and application to III-Vs (Poster Paper)
214.
Hopkinson M.; David J. P. R.; Claxton P. A.; Kightley P.
Growth of strained InAs/InP quantum wells by molecular beam epitaxy
215.
Lee T. W.; Houston P. A.; Kumar R.; Yang X. F.; Hill G.; Hopkinson M.; Claxton P. A.
Conduction‐band discontinuity in InGaP/GaAs measured using both current‐voltage and photoemission methods
88
Skolnick, Maurice S.
63
Mowbray, DJ
42
Liu, HY
32
Steer, Matthew J.
31
Wilson, Luke R.
Hill, Geoff
27
Cockburn, John W.
19
Fox, A. Mark
Groom, KM
David, JPR
18
Tartakovskii, Alexander I.
Badcock, TJ
16
Cullis, Anthony G.
14
Zibik, Evgeny A.
Whittaker, David M.