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Hommel, Detlef

Computed

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Research Profile

Latest Publications

1.
2011

Seyfried M.; Sebald K.; Dartsch H.; Tessarek C.; Figge S.; Kruse C.; Hommel D.; Florian M.; Jahnke F.; Gutowski J.

Optical Properties of InGaN Quantum Dots in Monolithic Pillar Microcavities
AIP Conf. Proc. 1399, 577 (2011)
Institute of Theoretical Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
2.
2011

Tessarek C.; Figge S.; Aschenbrenner T.; Bley S.; Rosenauer A.; Seyfried M.; Kalden J.; Sebald K.; Gutowski J.; Hommel D.

Strong phase separation of strained InxGa1-xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
Phys. Rev. B 83, 115316 (2011)
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
3.
2010

Mourad Daniel; Czycholl Gerd; Kruse Carsten; Klembt Sebastian; Retzlaff Reiner; Hommel Detlef; Gartner Mariuca; Anastasescu Mihai

Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdxZn1-xSe
Phys. Rev. B 82, 165204 (2010)
Institute for Theoretical Physics, University of Bremen, 28359 Bremen, Germany

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All Publications

1.
2011

Seyfried M.; Sebald K.; Dartsch H.; Tessarek C.; Figge S.; Kruse C.; Hommel D.; Florian M.; Jahnke F.; Gutowski J.

Optical Properties of InGaN Quantum Dots in Monolithic Pillar Microcavities
AIP Conf. Proc. 1399, 577 (2011)
Institute of Theoretical Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
2.
2011

Tessarek C.; Figge S.; Aschenbrenner T.; Bley S.; Rosenauer A.; Seyfried M.; Kalden J.; Sebald K.; Gutowski J.; Hommel D.

Strong phase separation of strained InxGa1-xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
Phys. Rev. B 83, 115316 (2011)
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
3.
2010

Mourad Daniel; Czycholl Gerd; Kruse Carsten; Klembt Sebastian; Retzlaff Reiner; Hommel Detlef; Gartner Mariuca; Anastasescu Mihai

Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdxZn1-xSe
Phys. Rev. B 82, 165204 (2010)
Institute for Theoretical Physics, University of Bremen, 28359 Bremen, Germany
4.
2010

Aschenbrenner T.; Dartsch H.; Kruse C.; Anastasescu M.; Stoica M.; Gartner M.; Pretorius A.; Rosenauer A.; Wagner Thomas; Hommel D.

Optical and structural characterization of AlInN layers for optoelectronic applications
J. Appl. Phys. 108, 063533 (2010)
Institute of Solid State Physics—Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen, Germany
5.
2010

Sebald K.; Seyfried M.; Kalden J.; Gutowski J.; Dartsch H.; Tessarek C.; Aschenbrenner T.; Figge S.; Kruse C.; Hommel D.; Florian M.; Jahnke F.

Optical properties of InGaN quantum dots in monolithic pillar microcavities
Appl. Phys. Lett. 96, 251906 (2010)
Semiconductor Optics, Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
6.
2010

Kümmell T.; Zaitsev S. V.; Gust A.; Kruse C.; Hommel D.; Bacher G.

Radiative recombination in photoexcited quantum dots up to room temperature: The role of fine-structure effects
Phys. Rev. B 81, 241306 (2010)
Werkstoffe der Elektrotechnik and CeNIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
7.
2010

Berstermann T.; Brüggemann C.; Bombeck M.; Akimov A. V.; Yakovlev D. R.; Kruse C.; Hommel D.; Bayer M.

Optical bandpass switching by modulating a microcavity using ultrafast acoustics
Phys. Rev. B 81, 085316 (2010)
Experimentelle Physik 2, Technische Universität Dortmund, D-44227 Dortmund, Germany
8.
2010

Davies J. J.; Smith L. C.; Wolverson D.; Gust A.; Kruse C.; Hommel D.; Kochereshko V. P.

Motion-enhanced magnetic moments of excitons in ZnSe
Phys. Rev. B 81, 085208 (2010)
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
9.
2009

Piskorska-Hommel E.; Schmidt Th.; Siebert M.; Yamaguchi T.; Hommel D.; Falta J.; Cross J.

Local structure of uncapped and capped InGaN/GaN quantum dots
J Synchrotron Rad 16, 494 (2009)
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02668 Warsaw, Poland
10.
2009

Monemar B.; Paskov P. P.; Pozina G.; Hemmingsson C.; Bergman J. P.; Kawashima T.; Amano H.; Akasaki I.; Paskova T.; Figge S.; Hommel D.; Usui A.

Evidence for Two Mg Related Acceptors in GaN
Phys. Rev. Lett. 102, 235501 (2009)
Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
11.
2009

Pacuski W.; Kruse C.; Figge S.; Hommel D.

High-reflectivity broadband distributed Bragg reflector lattice matched to ZnTe
Appl. Phys. Lett. 94, 191108 (2009)
Institute of Solid State Physics, University of Bremen, P.O. Box 330-440, D-28334 Bremen, Germany
12.
2009

Figge Stephan; Kröncke Hanno; Hommel Detlef; Epelbaum Boris M.

Temperature dependence of the thermal expansion of AlN
Appl. Phys. Lett. 94, 101915 (2009)
Institute of Solid State Physics, Section Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee, D-28359 Bremen, Germany
13.
2008

Arians R.; Gust A.; Kümmell T.; Kruse C.; Zaitsev S.; Bacher G.; Hommel D.

Electrically driven single quantum dot emitter operating at room temperature
Appl. Phys. Lett. 93, 173506 (2008)
Werkstoffe der Elektrotechnik and CeNIDE, Universität Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, ;Germany
14.
2008

Kruse Carsten; Lohmeyer Henning; Sebald Kathrin; Gutowski Jürgen; Hommel Detlef; Wiersig Jan; Jahnke Frank

Green laser emission from monolithic II-VI-based pillar microcavities near room temperature
Appl. Phys. Lett. 92, 031101 (2008)
Institute of Solid State Physics, University of Bremen, Postfach 330 440, 28334 Bremen, Germany
15.
2008

Lohmeyer H.; Kalden J.; Sebald K.; Kruse C.; Hommel D.; Gutowski J.

Fine tuning of quantum-dot pillar microcavities by focused ion beam milling
Appl. Phys. Lett. 92, 011116 (2008)
Institute of Solid State Physics, University of Bremen, Postfach 330 440, 28334 Bremen, Germany
16.
2007

Paskova T.; Becker L.; Böttcher T.; Hommel D.; Paskov P. P.; Monemar B.

Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
J. Appl. Phys. 102, 123507 (2007)
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany
17.
2007

Tripathy S.; Wagner H. P.; Ueta A.; Hommel D.

Coherent exciton-LO-phonon polarons in ZnSe quantum wells with strong confinement
Phys. Rev. B 75, 245316 (2007)
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA
18.
2007

Kröger R.; Paskova T.; Figge S.; Hommel D.; Rosenauer A.; Monemar B.

Erratum: “Interfacial structure of ;a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. ;90, 081918 (2007)]
Appl. Phys. Lett. 90, 249901 (2007)
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany
19.
2007

Kruse Carsten; Gartner Mariuca; Gust Arne; Hommel Detlef

In situ observation of Zn-induced etching during CdSe quantum dot formation using time-resolved ellipsometry
Appl. Phys. Lett. 90, 221102 (2007)
Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee NW1, 28359 Bremen, Germany;
20.
2007

Darakchieva V.; Speck J. S.; Fini P. T.; Haskell B. A.; Scholz F.; Off J.; Heuken M.; Hommel D.; Monemar B.; Paskov P. P.; Arwin H.; Schubert M.; Paskova T.; Nakamura S.

Anisotropic strain and phonon deformation potentials in GaN
Phys. Rev. B 75, 195217 (2007)
IFM, Linköping University, SE-581 83 Linköping, Sweden;
21.
2007

Gangopadhyay S.; Schmidt Th.; Einfeldt S.; Yamaguchi T.; Hommel D.; Falta J.

Formation and morphology of InGaN nanoislands on GaN(0001)
J. Vac. Sci. Technol. B 25, 791 (2007)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, D-28334 Bremen, Germany
22.
2007

Piskorska E.; Holý V.; Siebert M.; Renevier H.; Schmidt T.; Falta J.; Yamaguchi T.; Hommel D.

InGaN Selfassembled Quantum Dots Investigated By X‐Ray Diffraction‐Anomalous‐Fine Structure Technique
AIP Conf. Proc. 893, 79 (2007)
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02668 Warsaw, Poland;
23.
2007

Kröger R.; Paskova T.; Rosenauer A.; Hommel D.; Monemar B.; Fini P.; Haskell B.; Speck J.; Nakamura S.

On the Mechanism of Dislocation and Stacking Fault Formation in a‐plane GaN Films Grown by Hydride Vapor Phase Epitaxy
AIP Conf. Proc. 893, 341 (2007)
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany
24.
2007

Lohmeyer H.; Sebald K.; Kruse C.; Hommel D.; Gutowski J.

Enhanced Spontaneous Emission of CdSe/ZnSe Quantum Dots in Monolithic II‐VI Pillar Microcavities
AIP Conf. Proc. 893, 1147 (2007)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
25.
2007

Tuomisto F.; Paskova T.; Kröger R.; Figge S.; Hommel D.; Monemar B.; Kersting R.

Defect distribution in a-plane GaN on Al2O3
Appl. Phys. Lett. 90, 121915 (2007)
Laboratory of Physics, Helsinki University of Technology, FI-02015 TKK, Finland
26.
2007

Arians R.; Kümmell T.; Bacher G.; Gust A.; Kruse C.; Hommel D.

Room temperature emission from CdSe/;ZnSSe/;MgS single quantum dots
Appl. Phys. Lett. 90, 101114 (2007)
Werkstoffe der Elektrotechnik, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany;
27.
2007

Kröger R.; Paskova T.; Figge S.; Hommel D.; Rosenauer A.; Monemar B.

Interfacial structure of a-plane GaN grown on r-plane sapphire
Appl. Phys. Lett. 90, 081918 (2007)
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany
28.
2006

Roder C.; Einfeldt S.; Figge S.; Paskova T.; Hommel D.; Paskov P. P.; Monemar B.; Behn U.; Haskell B. A.; Fini P. T.; Nakamura S.

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
J. Appl. Phys. 100, 103511 (2006)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
29.
2006

Barabash R. I.; Roder C.; Ice G. E.; Einfeldt S.; Budai J. D.; Barabash O. M.; Figge S.; Hommel D.

Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
J. Appl. Phys. 100, 053103 (2006)
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 and Center for Materials Processing, University of Tennessee, Knoxville, Tennessee 37996
30.
2006

Lohmeyer H.; Kruse C.; Sebald K.; Gutowski J.; Hommel D.

Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities
Appl. Phys. Lett. 89, 091107 (2006)
Institute of Solid State Physics, University of Bremen, Postfach 330 440, 28334 Bremen, Germany
31.
2006

Paskova T.; Kroeger R.; Figge S.; Hommel D.; Darakchieva V.; Monemar B.; Preble E.; Hanser A.; Williams N. M.; Tutor M.

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
Appl. Phys. Lett. 89, 051914 (2006)
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany
32.
2006

Paskova T.; Hommel D.; Paskov P. P.; Darakchieva V.; Monemar B.; Bockowski M.; Suski T.; Grzegory I.; Tuomisto F.; Saarinen K.; Ashkenov N.; Schubert M.

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Appl. Phys. Lett. 88, 141909 (2006)
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany
33.
2006

Lohmeyer H.; Sebald K.; Kruse C.; Kröger R.; Gutowski J.; Hommel D.; Wiersig J.; Baer N.; Jahnke F.

Confined optical modes in monolithic II-VI pillar microcavities
Appl. Phys. Lett. 88, 051101 (2006)
Institute of Solid State Physics, University of Bremen, Postfach 330 440, 28334 Bremen, Germany
34.
2005

Schmidt Th.; Roventa E.; Clausen T.; Flege J. I.; Alexe G.; Bernstorff S.; Kübel C.; Rosenauer A.; Hommel D.; Falta J.

Ordering mechanism of stacked CdSe/;ZnSxSe1-x; quantum dots; A combined reciprocal-space and real-space approach
Phys. Rev. B 72, 195334 (2005)
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28 359 Bremen, Germany
35.
2005

Paskov P. P.; Schifano R.; Monemar B.; Paskova T.; Figge S.; Hommel D.

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
J. Appl. Phys. 98, 093519 (2005)
Department of Physics and Measurements Technology, Linköping University, S-581 83 Linköping, Sweden;
36.
2005

Roder C.; Figge S.; Einfeldt S.; Hommel D.

Temperature dependence of the thermal expansion of GaN
Phys. Rev. B 72, 085218 (2005)
Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
37.
2005

Schumacher S.; Czycholl G.; Jahnke F.; Kudyk I.; Wischmeier L.; Rückmann I.; Voss T.; Gutowski J.; Gust A.; Hommel D.

Coherent propagation of polaritons in semiconductor heterostructures: Nonlinear pulse transmission in theory and experiment
Phys. Rev. B 72, 081308 (2005)
Institute for Theoretical Physics, University of Bremen, 28334 Bremen, Germany
38.
2005

Seemann M.; Stolz H.; Kieseling F.; Henneberger K.; Passow T.; Franz R.; Manzke G.; Hommel D.

Carrier-induced changes of the phase of reflected light at a pumped ZnSe layer
Phys. Rev. B 72, 075204 (2005)
Physics Department, Rostock University, D-18051 Rostock, Germany
39.
2005

Kruse C.; Sebald K.; Lohmeyer H.; Brendemühl B.; Kroger R.; Gutowski J.; Hommel D.

Room‐temperature operation of a green monolithic II‐VI vertical‐cavity surface‐emitting laser
AIP Conf. Proc. 772, 1521 (2005)
Institut für Festkörperphysik, Universität Bremen, Otto‐Hahn‐Allee NW1, 28359 Bremen, Germany;
40.
2005

Alexe G.; Heinke H.; Haase L.; Albrecht M.; Schreiber J.; Hommel D.; Strunk H. P.

Nondestructive evaluation of misfit dislocation densities in ZnSe/;GaAs heterostructures by x-ray diffuse scattering
J. Appl. Phys. 97, 103506 (2005)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, 28334 Bremen, Germany;
41.
2005

Kröger Roland; Einfeldt Sven; Chierchia Rosa; Hommel Detlef; Reitmeier Zachary J.; Davis Robert F.; Liu Quincy K. K.

On the microstructure of AlxGa1-x;N layers grown on 6H-SiC(0001) substrates
J. Appl. Phys. 97, 083501 (2005)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
42.
2005

Murai Akihiko; DenBaars Steven P.; Mishra Umesh K.; Speck James S.; McCarthy Lee; Samonji Katsuya; Kruse Carsten; Hommel Detlef

Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
Jpn. J. Appl. Phys., Part 2 44, L958 (2005)
ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.
43.
2004

Schumacher S.; Czycholl G.; Jahnke F.; Kudyk I.; Rückmann H. I.; Gutowski J.; Gust A.; Alexe G.; Hommel D.

Polariton propagation in shallow-confinement heterostructures: Microscopic theory and experiment showing the breakdown of the dead-layer concept
Phys. Rev. B 70, 235340 (2004)
Institute for Theoretical Physics, University of Bremen, D-28334 Bremen, Germany
44.
2004

Kapitonov A. M.; Kayser D.; Woggon U.; Itoh T.; Hommel D.

Optical properties of epitaxially grown submonolayer CdSe/;ZnSe nanostructures
Phys. Rev. B 70, 195304 (2004)
Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan
45.
2004

Murai Akihiko; McCarthy Lee; Mishra Umesh; DenBaars Steven P.; Kruse Carsten; Figge Stephan; Hommel Detlef

Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
Jpn. J. Appl. Phys., Part 2 43, L1275 (2004)
46.
2004

Schmidt Th.; Clausen T.; Falta J.; Alexe G.; Passow T.; Hommel D.; Bernstorff S.

Correlated stacks of CdSe/ZnSSe quantum dots
Appl. Phys. Lett. 84, 4367 (2004)
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28 359 Bremen, Germany;
47.
2003

Seufert J.; Rambach M.; Bacher G.; Forchel A.; Passow T.; Hommel D.

Single-electron charging of a self-assembled II–VI quantum dot
Appl. Phys. Lett. 82, 3946 (2003)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
48.
2003

Chierchia R.; Böttcher T.; Heinke H.; Einfeldt S.; Figge S.; Hommel D.

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
J. Appl. Phys. 93, 8918 (2003)
Institut für Festkörperphysik, Universität Bremen, P. O. Box 330 440, 28334 Bremen, Germany;
49.
2003

Hübner J.; Rühle W. W.; Klude M.; Hommel D.; Bhat R. D. R.; Sipe J. E.; van Driel H. M.

Direct Observation of Optically Injected Spin-Polarized Currents in Semiconductors
Phys. Rev. Lett. 90, 216601 (2003)
Department of Physics and Materials Science Center, University of Marburg, Renthof 5, 35032 Marburg, Germany
50.
2003

Maute M.; Wachter S.; Kalt H.; Ohkawa K.; Hommel D.

Energy renormalization and binding energy of the biexciton
Phys. Rev. B 67, 165323 (2003)
Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany;
51.
2003

Scheibner M.; Bacher G.; Weber S.; Forchel A.; Passow Th.; Hommel D.

Polarization dynamics in self-assembled CdSe/ZnSe quantum dots: The role of excess energy
Phys. Rev. B 67, 153302 (2003)
Technische Physik, Universität Würzburg, Am Hubland, D–97074 Würzburg, Germany;
52.
2003

Rudloff D.; Riemann T.; Christen J.; Liu Q. K. K.; Kaschner A.; Hoffmann A.; Thomsen Ch.; Vogeler K.; Diesselberg M.; Einfeldt S.; Hommel D.

Stress analysis of AlxGa1-x;N films with microcracks
Appl. Phys. Lett. 82, 367 (2003)
Institüt für Experimentelle Physik, Otto-von-Guericke-Universität, Magdeburg, P.O. Box 4120, 39016 Magdeburg, Germany;
53.
2003

Woggon U.; Leonardi K.; Kayser D.; Gerlach B.; Kalina F.; Miller D.; Hommel D.

Bound polarons in semiconductor nanostructures
Phys. Rev. B 67, 045204 (2003)
Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn Strasse 4, D-44221 Dortmund;
54.
2003

Zhao Hui; Ohkawa K.; Kalt H.; Moehl S.; Dal Don B.; Hommel D.

Spatiotemporal dynamics of quantum-well excitons
Phys. Rev. B 67, 035306 (2003)
Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany;
55.
2002

Schulz Oliver; Strassburg Matthias; Rissom Thorsten; Pohl Udo W.; Bimberg Dieter; Klude Matthias; Hommel Detlef

Post-growth p-type doping enhancement for ZnSe-based lasers using a Li3N interlayer
Appl. Phys. Lett. 81, 4916 (2002)
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany;
56.
2002

Figge Stephan; Kröger Roland; Böttcher Tim; Ryder Peter L.; Hommel Detlef

Magnesium segregation and the formation of pyramidal defects in p-GaN
Appl. Phys. Lett. 81, 4748 (2002)
Institute for Solid State Physics, University of Bremen, P. O. Box 330440, D-28334 Bremen, Germany
57.
2002

Passow T.; Leonardi K.; Heinke H.; Hommel D.; Litvinov D.; Rosenauer A.; Gerthsen D.; Seufert J.; Bacher G.; Forchel A.

Quantum dot formation by segregation enhanced CdSe reorganization
J. Appl. Phys. 92, 6546 (2002)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330 440, 28334 Bremen, Germany;
58.
2002

Strauf S.; Michler P.; Klude M.; Hommel D.; Bacher G.; Forchel A.

Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor
Phys. Rev. Lett. 89, 177403 (2002)
Institute of Solid State Physics, Semiconductor Optics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
59.
2002

Sebald K.; Michler P.; Passow T.; Hommel D.; Bacher G.; Forchel A.

Single-photon emission of CdSe quantum dots at temperatures up to 200 K
Appl. Phys. Lett. 81, 2920 (2002)
Institut für Festkörperphysik, Halbleiteroptik, Universtät Bremen, P.O. Box 330440, 28334 Bremen, Germany;
60.
2002

Einfeldt S.; Dießelberg M.; Heinke H.; Hommel D.; Rudloff D.; Christen J.; Davis R. F.

Strain in cracked AlGaN layers
J. Appl. Phys. 92, 118 (2002)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany;
61.
2001

Kruse C.; Einfeldt S.; Böttcher T.; Hommel D.

In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy
Appl. Phys. Lett. 79, 3425 (2001)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany;
62.
2001

Davies J. J.; Tournié E.; Hommel D.; Ohkawa K.; Klude M.; Gutowski J.; Michler P.; Strauf S.; Wolverson D.; Faurie J.-P.

Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe
Phys. Rev. B 64, 205206 (2001)
Department of Physics, University of Bath, Bath, BA2 7AY, United Kingdom;
63.
2001

Passow T.; Heinke H.; Schmidt T.; Falta J.; Stockmann A.; Selke H.; Ryder P. L.; Leonardi K.; Hommel D.

Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots
Phys. Rev. B 64, 193311 (2001)
Universität Bremen, Institut für Festkörperphysik, P.O. Box 330 440, 28334 Bremen, Germany;
64.
2001

Klude M.; Hommel D.

560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs
Appl. Phys. Lett. 79, 2523 (2001)
Institut für Festkörperphysik, Universität Bremen, Kufsteiner Strasse NW1, D-28359 Bremen, Germany;
65.
2001

Seufert J.; Obert M.; Bacher G.; Forchel A.; Passow T.; Leonardi K.; Hommel D.

Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots
Phys. Rev. B 64, 121303 (2001)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
66.
2001

Seufert J.; Obert M.; Scheibner M.; Gippius N. A.; Bacher G.; Forchel A.; Passow T.; Leonardi K.; Hommel D.

Stark effect and polarizability in a single CdSe/ZnSe quantum dot
Appl. Phys. Lett. 79, 1033 (2001)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
67.
2001

Marbach K.; Zeitz W.-D.; Ittermann B.; Füllgrabe M.; Heemeier M.; Kroll F.; Mai F.; Meier P.; Peters D.; Thieß H.; Ackermann H.; Stöckmann H.-J.; Wenisch H.; Hommel D.; Landwehr G.

Defect properties of ion-implanted nitrogen in ZnSe
Phys. Rev. B 63, 241201 (2001)
Fachbereich Physik und Wissenschaftliches Zentrum für Materialforschung der Universität Marburg, D-35032 Marburg, Germany;
68.
2001

Wagner H. P.; Kühnelt M.; Wenisch H.; Hommel D.

Determination of band offset using continuous-wave two-photon excitation in a ZnSe quantum-well waveguide structure
Phys. Rev. B 63, 235319 (2001)
Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany;
69.
2001

Kruse C.; Einfeldt S.; Böttcher T.; Hommel D.; Rudloff D.; Christen J.

Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy
Appl. Phys. Lett. 78, 3827 (2001)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany;
70.
2001

Böttcher T.; Einfeldt S.; Figge S.; Chierchia R.; Heinke H.; Hommel D.; Speck J. S.

The role of high-temperature island coalescence in the development of stresses in GaN films
Appl. Phys. Lett. 78, 1976 (2001)
Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany;
71.
2001

Kasic A.; Schubert M.; Kuhn B.; Scholz F.; Einfeldt S.; Hommel D.

Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN
J. Appl. Phys. 89, 3720 (2001)
Fakultät für Physik und Geowissenschaften, Arbeitsgruppe Halbleiterphysik, Universität Leipzig, 04103 Leipzig, Germany;
72.
2001

Woggon U.; Wenisch H.; Lüthgens E.; Hommel D.

Probing the electron–LO-phonon interaction of a single impurity state in a semiconductor
Phys. Rev. B 63, 073205 (2001)
Fachbereich Physik, Universität Dortmund, Otto-Hahn-Strasse 4, D-44227 Dortmund, Germany;
73.
2001

Einfeldt S.; Heinke H.; Kirchner V.; Hommel D.

Strain relaxation in AlGaN/GaN superlattices grown on GaN
J. Appl. Phys. 89, 2160 (2001)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany;
74.
2000

Einfeldt S.; Kirchner V.; Heinke H.; Dießelberg M.; Figge S.; Vogeler K.; Hommel D.

Strain relaxation in AlGaN under tensile plane stress
J. Appl. Phys. 88, 7029 (2000)
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
75.
2000

Passow T.; Heinke H.; Falta J.; Leonardi K.; Hommel D.

Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures
Appl. Phys. Lett. 77, 3544 (2000)
Universität Bremen, Institut für Festkörperphysik, P. O. Box 330 440, 28334 Bremen, Germany;
76.
2000

Davies J. J.; Wolverson D.; Griffin I. J.; Karimov O. Z.; Orange C. L.; Hommel D.; Behringer M.

Gyromagnetic ratios of electrons confined in quantum wells in ZnSe/ZnxMg1-x;SySe1-y; heterostructures
Phys. Rev. B 62, 10329 (2000)
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
77.
2000

Heinke H.; Kirchner V.; Einfeldt S.; Hommel D.

X-ray diffraction analysis of the defect structure in epitaxial GaN
Appl. Phys. Lett. 77, 2145 (2000)
Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, D-28334 Bremen, Germany;
78.
2000

Bäume P.; Behringer M.; Gutowski J.; Hommel D.

Calculation of the Coulomb broadening of donor-acceptor pair emission in compensated semiconductors
Phys. Rev. B 62, 8023 (2000)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
79.
2000

Homburg O.; Sebald K.; Michler P.; Gutowski J.; Wenisch H.; Hommel D.

Negatively charged trion in ZnSe single quantum wells with very low electron densities
Phys. Rev. B 62, 7413 (2000)
Institut für Festkörperphysik, Bereich Halbleiteroptik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
80.
2000

Kasic A.; Schubert M.; Einfeldt S.; Hommel D.; Tiwald T. E.

Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry
Phys. Rev. B 62, 7365 (2000)
Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, Nebraska, 68588
81.
2000

Kirchner V.; Heinke H.; Hommel D.; Domagala J. Z.; Leszczynski M.

Thermal expansion of bulk and homoepitaxial GaN
Appl. Phys. Lett. 77, 1434 (2000)
Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany;
82.
2000

Krtschil A.; Witte H.; Lisker M.; Christen J.; Krost A.; Birkle U.; Einfeldt S.; Hommel D.; Scholz F.; Off J.; Stutzmann M.

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy
Appl. Phys. Lett. 77, 546 (2000)
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, P.O. Box 4120, 39016 Magdeburg, Germany
83.
2000

Seufert J.; Weigand R.; Bacher G.; Kümmell T.; Forchel A.; Leonardi K.; Hommel D.

Spectral diffusion of the exciton transition in a single self-organized quantum dot
Appl. Phys. Lett. 76, 1872 (2000)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
84.
2000

von Freymann G.; Lüerßen D.; Rabenstein C.; Mikolaiczyk M.; Richter H.; Kalt H.; Schimmel Th.; Wegener M.; Okhawa K.; Hommel D.

Near-field photoluminescence imaging of single defects in a ZnSe quantum-well structure at low temperatures
Appl. Phys. Lett. 76, 203 (2000)
Institut für Angewandte Physik, Universität Karlsruhe (TH), D-76128 Karlsruhe, Germany;
85.
1999

Lüerßen D.; Bleher R.; Richter H.; Schimmel Th.; Kalt H.; Rosenauer A.; Litvinov D.; Kamilli A.; Gerthsen D.; Ohkawa K.; Jobst B.; Hommel D.

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures
Appl. Phys. Lett. 75, 3944 (1999)
Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany;
86.
1999

Bacher G.; Weigand R.; Seufert J.; Kulakovskii V. D.; Gippius N. A.; Forchel A.; Leonardi K.; Hommel D.

Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot
Phys. Rev. Lett. 83, 4417 (1999)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
87.
1999

Wolverson D.; Jobst B.; Itoh S.; Okuyama H.; Nakano K.; Fujita Sg.; Fujita Sz.; Ogata K.; Orange C. L.; Davies J. J.; Hommel D.

Spin-flip Raman scattering of wide-band-gap II-VI ternary alloys
Phys. Rev. B 60, 13555 (1999)
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom;
88.
1999

Steinbach D.; Kocherscheidt G.; Wehner M. U.; Kalt H.; Wegener M.; Ohkawa K.; Hommel D.; Axt V. M.

Electron-phonon quantum kinetics in the strong-coupling regime
Phys. Rev. B 60, 12079 (1999)
Institut für Angewandte Physik, Universität Karlsruhe (TH), Kaiserstraße 12, D-76128 Karlsruhe, Germany;
89.
1999

Lilienkamp T.; Michler P.; Ebeling W.; Gutowski J.; Behringer M.; Fehrer M.; Hommel D.

Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitons in (Zn,Cd)Se/Zn(S,Se) structures
J. Appl. Phys. 86, 4360 (1999)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
90.
1999

Gindele F.; Woggon U.; Langbein W.; Hvam J. M.; Leonardi K.; Hommel D.; Selke H.

Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures
Phys. Rev. B 60, 8773 (1999)
Institut für Experimentelle Physik, Universität Dortmund, D-44221 Dortmund, Germany;
91.
1999

Homburg O.; Behringer M.; Wenisch H.; Gutowski J.; Heinecke R.; Michler P.; Hommel D.

Biexcitonic gain characteristics in ZnSe-based lasers with binary wells
Phys. Rev. B 60, 5743 (1999)
Institut für Festkörperphysik, Bereich Halbleiteroptik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
92.
1999

Kaschner A.; Siegle H.; Kaczmarczyk G.; Straßburg M.; Hoffmann A.; Thomsen C.; Birkle U.; Einfeldt S.; Hommel D.

Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
Appl. Phys. Lett. 74, 3281 (1999)
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany;
93.
1999

Krtschil A.; Witte H.; Lisker M.; Christen J.; Birkle U.; Einfeldt S.; Hommel D.

Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources
Appl. Phys. Lett. 74, 2032 (1999)
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, P.O. Box 4120, 39016 Magdeburg, Germany;
94.
1999

Wenisch Helmut; Behringer Martin; Fehrer Michael; Klude Matthias; Isemann Andreas; Ohkawa Kazuhiro; Hommel Detlef

Device properties of homo- and heteroepitaxial ZnSe-based laser diodes
Jpn. J. Appl. Phys., Part 1 38, 2590 (1999)
Institute of Solid Sate Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany
95.
1999

Kulakovskii V. D.; Bacher G.; Weigand R.; Kümmell T.; Forchel A.; Borovitskaya E.; Leonardi K.; Hommel D.

Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe; Single Quantum Dots
Phys. Rev. Lett. 82, 1780 (1999)
Technische Physik, Universität Würzburg, 97074 Würzburg, Germany;
96.
1998

Kirchner V.; Heinke H.; Birkle U.; Einfeldt S.; Hommel D.; Selke H.; Ryder P. L.

Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers
Phys. Rev. B 58, 15749 (1998)
Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
97.
1998

Westphäling R.; Ullrich P.; Hoffmann J.; Kalt H.; Klingshirn C.; Ohkawa K.; Hommel D.

Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature
J. Appl. Phys. 84, 6871 (1998)
Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany;
98.
1998

Böttcher T.; Einfeldt S.; Kirchner V.; Figge S.; Heinke H.; Hommel D.; Selke H.; Ryder P. L.

Incorporation of indium during molecular beam epitaxy of InGaN
Appl. Phys. Lett. 73, 3232 (1998)
Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany;
99.
1998

Kümmell T.; Weigand R.; Bacher G.; Forchel A.; Leonardi K.; Hommel D.; Selke H.

Single zero-dimensional excitons in CdSe/ZnSe nanostructures
Appl. Phys. Lett. 73, 3105 (1998)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
100.
1998

Siegle H.; Kaschner A.; Hoffmann A.; Broser I.; Thomsen C.; Einfeldt S.; Hommel D.

Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism
Phys. Rev. B 58, 13619 (1998)
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany;
101.
1998

Kuttler M.; Strassburg M.; Pohl U. W.; Bimberg D.; Behringer M.; Hommel D.

Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering
Appl. Phys. Lett. 73, 1865 (1998)
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany;
102.
1998

Krtschil A.; Witte H.; Lisker M.; Christen J.; Birkle U.; Einfeldt S.; Hommel D.

Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy
J. Appl. Phys. 84, 2040 (1998)
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, P.O. Box 4120, 39016 Magdeburg, Germany;
103.
1998

Michler P.; Vehse M.; Gutowski J.; Behringer M.; Hommel D.; Pereira M. F.; Henneberger K.

Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers
Phys. Rev. B 58, 2055 (1998)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
104.
1998

Michler P.; Lilienkamp T.; Ebeling W.; Gutowski J.; Behringer M.; Fehrer M.; Hommel D.

Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue–green spectral region
Appl. Phys. Lett. 72, 3320 (1998)
Institut für Festkörperphysik, Universität Bremen, D-28334 Bremen, Germany;
105.
1998

Kümmell T.; Bacher G.; Forchel A.; Lermann G.; Kiefer W.; Jobst B.; Hommel D.; Landwehr G.

Size dependence of strain relaxation and lateral quantization in deep etched CdxZn1-x;Se/ZnSe quantum wires
Phys. Rev. B 57, 15439 (1998)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
106.
1998

Manzke G.; Peng Q. Y.; Henneberger K.; Gutowski J.; Wundke K.; Hauke K.; Neukirch U.; Hommel D.

Density Dependence of the Exciton Energy in Semiconductors
Phys. Rev. Lett. 80, 4943 (1998)
Universität Rostock, Fachbereich Physik, Universitätsplatz 3, D-18051 Rostock, Germany;
107.
1998

Heinlein Christian; Berge Torunn; Hommel Detlef; Einfeldt Sven; Grepstad Jostein K.; Grande Alf P.

Preconditioning of c-plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation
J. Appl. Phys. 83, 6023 (1998)
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway;
108.
1998

Behringer M.; Bäume P.; Gutowski J.; Hommel D.

Compensation mechanisms in ZnSe:N and codoped ZnSe:N:Cl
Phys. Rev. B 57, 12869 (1998)
University of Bremen, Kufsteiner Strasse NW1, D-28359 Bremen, Germany;
109.
1998

Neukirch U.; Bley G.; Gutowski J.; Hommel D.

Lateral motion of confined excitonic polaritons
Phys. Rev. B 57, 9208 (1998)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
110.
1998

Umlauff M.; Hoffmann J.; Jobst B.; Heuken M.; Söllner J.; Scholl M.; Hvam J. M.; Langbein W.; Kalt H.; Hommel D.

Direct observation of free-exciton thermalization in quantum-well structures
Phys. Rev. B 57, 1390 (1998)
Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany;
111.
1997

Herz K.; Kümmell T.; Bacher G.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.

Biexciton formation in CdxZn1-x;Se/ZnSe quantum-dot and quantum-well structures
Phys. Rev. B 56, 15261 (1997)
Technische Physik, Universität Würzburg, D-97074 Würzburg, Germany;
112.
1997

Kümmell T.; Bacher G.; Forchel A.; Nürnberger J.; Faschinger W.; Landwehr G.; Jobst B.; Hommel D.

Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials
J. Vac. Sci. Technol. B 15, 2656 (1997)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
113.
1997

Wenisch H.; Fehrer M.; Ohkawa K.; Hommel D.; Prokesch M.; Rinas U.; Hartmann H.

Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates
J. Appl. Phys. 82, 4690 (1997)
Institut für Festkörperphysik, Universität Bremen, D-28359 Bremen, Germany;
114.
1997

Hellig K.; Prösch G.; Behringer M.; Fehrer M.; Beyer R.; Burghardt H.; Hommel D.; Zahn D. R. T.

Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by deep level transient spectroscopy
Appl. Phys. Lett. 71, 2187 (1997)
Institut für Physik, Technische Universität D-09107 Chemnitz, Germany;
115.
1997

Bacher G.; Hommel D.; Jobst B.; Forchel A.; Breitwieser O.; Kümmell T.; Spiegel R.; Landwehr G.

Relaxation of hot excitons in inhomogeneously broadened CdxZn1-x;Se/ZnSe nanostructures
Phys. Rev. B 56, 6868 (1997)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
116.
1997

Leonardi K.; Heinke H.; Ohkawa K.; Hommel D.; Selke H.; Gindele F.; Woggon U.

CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations
Appl. Phys. Lett. 71, 1510 (1997)
Institut für Festkörperphysik, Universität Bremen, D-28359 Bremen, Germany;
117.
1997

Drechsler M.; Meyer B. K.; Hofmann D. M.; Ruppert P.; Hommel D.

Optically detected cyclotron resonance properties of high purity ZnSe epitaxial layers grown on GaAs
Appl. Phys. Lett. 71, 1116 (1997)
Physikdepartment E 16, Technical University of Munich, James-Franck-Strasse, D-85747 Garching, Germany
118.
1997

Kümmell T.; Bacher G.; Forchel A.; Nürnberger J.; Faschinger W.; Landwehr G.; Jobst B.; Hommel D.

Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching
Appl. Phys. Lett. 71, 344 (1997)
Technische Physik, Universität Würzburg, Am Hubland, D97074 Würzburg, Germany;
119.
1997

Michler P.; Neukirch U.; Wundke K.; Gutowski J.; Behringer M.; Hommel D.

Picosecond lasing dynamics of gain-switched (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers
J. Appl. Phys. 82, 548 (1997)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany;
120.
1997

Kuttler M.; Strassburg M.; Stier O.; Pohl U. W.; Bimberg D.; Kurtz E.; Nürnberger J.; Landwehr G.; Behringer M.; Hommel D.

Doping dependent ZnCdSe/ZnSe-superlattice disordering
Appl. Phys. Lett. 71, 243 (1997)
Institut für Festkörperphysik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;
121.
1997

Spiegel R.; Hommel D.; Jobst B.; Forchel A.; Bacher G.; Landwehr G.

Polarization-dependent formation of biexcitons in (Zn,Cd)Se/ZnSe quantum wells
Phys. Rev. B 55, 9866 (1997)
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;
122.
1997

Langbein W.; Jobst B.; Kalt H.; Umlauff M.; Hvam J. M.; Hommel D.

Binding-energy distribution and dephasing of localized biexcitons
Phys. Rev. B 55, R7383 (1997)
Mikroelektronik Centret, The Technical University of Denmark, Building 345 East, DK-2800 Lyngby, Denmark
123.
1996

Godlewski M.; Bergman J. P.; Monemar B.; Kurtz E.; Hommel D.

Influence of strain conditions on exciton dynamics and on thermal stability of photoluminescence of ZnCdSe/ZnSe quantum wells
Appl. Phys. Lett. 69, 2843 (1996)
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02‐668 Warsaw, Poland;
124.
1996

Kuttler M.; Strassburg M.; Türck V.; Heitz R.; Pohl U. W.; Bimberg D.; Kurtz E.; Landwehr G.; Hommel D.

Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering
Appl. Phys. Lett. 69, 2647 (1996)
Institut für Festkörperphysik, TU‐Berlin, Hardenbergstrasse 36, D‐10623 Berlin, Germany;
125.
1996

Kubacki F.; Gutowski J.; Hommel D.; Heuken M.; Pohl U. W.

Determination of deformation potentials in ZnSe/GaAs strained‐layer heterostructures
Phys. Rev. B 54, 2028 (1996)
Institut für Festkörperphysik, Universität Bremen, D‐28334 Bremen, Germany;
126.
1996

Zettler J. -T.; Stahrenberg K.; Richter W.; Wenisch H.; Jobst B.; Hommel D.

Molecular beam epitaxy grown ZnSe studied by reflectance anisotropy spectroscopy and reflection high‐energy electron diffraction
J. Vac. Sci. Technol. B 14, 2757 (1996)
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D‐10623 Berlin, Germany;
127.
1996

Jobst B.; Hommel D.; Lunz U.; Gerhard T.; Landwehr G.

E0 band‐gap energy and lattice constant of ternary Zn;1-;xMgxSe as functions of composition
Appl. Phys. Lett. 69, 97 (1996)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, 28334 Bremen, Germany;
128.
1996

Neukirch U.; Weckendrup D.; Wundke K.; Gutowski J.; Hommel D.

Coherent dynamics of excitons and excitonic complexes in ZnSe epilayers
J. Opt. Soc. Am. B 13, 1256 (1996)
Institut für Festkörperphysik, Bereich Halbleiteroptik, Universität Bremen, P.O. Box 330 440, D‐28334 Bremen, Germany;
129.
1996

Wundke K.; Neukirch U.; Gutowski J.; Hommel D.

Heavy‐hole–light‐hole quantum beats in nonlinear transmission spectroscopy
Phys. Rev. B 53, 10973 (1996)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D‐28334 Bremen, Germany;
130.
1996

Bacher G.; Tönnies D.; Eisert D.; Forchel A.; Möller M. O.; Korn M.; Jobst B.; Hommel D.; Landwehr G.; Söllner J.; Heuken M.

Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs
J. Appl. Phys. 79, 4368 (1996)
Technische Physik, Universität Würzburg, Am Hubland, D‐97074 Würzburg, Germany;
131.
1996

Spiegel R.; Bacher G.; Herz K.; Illing M.; Kümmell T.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.; Söllner J.; Heuken M.

Excitonic lifetimes in (Zn,Cd)Se/ZnSe and ZnSe/Zn(Se,S) quantum wires
Phys. Rev. B 53, R4233 (1996)
Technische Physik, Universität Würzburg, Am Hubland, D‐97074 Würzburg, Germany;
132.
1996

Eisert D.; Bacher G.; Mais N.; Reithmaier J. P.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.

First order gain and index coupled distributed feedback lasers in ZnSe‐based structures with finely tunable emission wavelengths
Appl. Phys. Lett. 68, 599 (1996)
Technische Physik, Universität Würzburg, Am Hubland, D‐97074 Würzburg, Germany;
133.
1996

Jobst B.; Lunz U.; Zerlauth S.; Cerva H.; Hommel D.; Landwehr G.

Molecular‐beam‐epitaxial growth and characterization of Zn;1-;xCaxSySe1-;y alloys for blue‐green laser applications
J. Appl. Phys. 79, 763 (1996)
Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany;
134.
1995

Illing M.; Bacher G.; Kümmell T.; Forchel A.; Hommel D.; Jobst B.; Landwehr G.

Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching
J. Vac. Sci. Technol. B 13, 2792 (1995)
Technische Physik, Universität Würzburg, Am Hubland, D‐97074 Würzburg, Germany;
135.
1995

Bäume P.; Gutowski J.; Wiesmann D.; Heitz R.; Hoffmann A.; Kurtz E.; Hommel D.; Landwehr G.

Intensity‐dependent energy and line shape variation of donor–acceptor‐pair bands in ZnSe;N at different compensation levels
Appl. Phys. Lett. 67, 1914 (1995)
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D‐28334 Bremen, Germany;
136.
1995

Dieβel A.; Ebeling W.; Gutowski J.; Jobst B.; Schüll K.; Hommel D.; Henneberger K.

Bleaching of excitons in a (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) laser diode under lasing conditions
Phys. Rev. B 52, 4736 (1995)
Institut für Festkörperphysik, Universität Bremen, P. O. Box 330440, D‐28334 Bremen, Germany;
137.
1995

Illing M.; Bacher G.; Forchel A.; Hommel D.; Jobst B.; Landwehr G.

First order distributed feedback operation in ZnSe based laser structures
Appl. Phys. Lett. 67, 1 (1995)
Technische Physik, Universität Würzburg, Am Hubland, D‐97074 Würzburg, Germany;
138.
1995

Illing M.; Bacher G.; Kümmell T.; Forchel A.; Andersson T. G.; Hommel D.; Jobst B.; Landwehr G.

Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires
Appl. Phys. Lett. 67, 124 (1995)
Technische Physik, Universität Würzburg, Am Hubland, D‐97074, Würzburg, Germany;
139.
1995

Lunz U.; Jobst B.; Einfeldt S.; Becker C. R.; Hommel D.; Landwehr G.

Optical properties of Zn1-;xMgxSySe1-;y epitaxial layers for blue‐green laser applications
J. Appl. Phys. 77, 5377 (1995)
Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany;
140.
1995

Neukirch Ulrich; Wundke Kai; Weckendrup D.; Gutowski Juergen; Hommel D.; Landwehr Gottfried

Ultrafast differential-transmission spectroscopy of excitons in strained ZnSe layers and Zn1-xCdxSe/ZnSe quantum wells
Proc. SPIE Int. Soc. Opt. Eng. 2362, 74 (1995)
Univ. Bremen (Germany)
141.
1995

Diessel A.; Gutowski Juergen; Heuken Michael; Hommel D.

Gain mechanisms in exciton-localizing ZnSe-based quantum well structures
Proc. SPIE Int. Soc. Opt. Eng. 2362, 515 (1995)
Univ. Bremen (Germany)
142.
1994

Boege P.; Hommel D.; Becker Charles R.; Einfeldt S.; Wu Xinzhang; Xu Shan-jia; Schaefer H.; Geick Reinhart

Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method
Proc. SPIE Int. Soc. Opt. Eng. 2211, 649 (1994)
Univ. Wuerzburg (Germany)
143.
1993

Scholl S.; Schäfer H.; Waag A.; Hommel D.; von Schierstedt K.; Kuhn-Heinrich B.; Landwehr G.

Two‐dimensional Shubnikov–de Haas oscillations in modulation‐doped CdTe/CdMnTe quantum‐well structures
Appl. Phys. Lett. 62, 3010 (1993)
Universität Würzburg, Physikalisches Institut, D‐8700 Würzburg, Germany;
144.
1992

Litz Th.; Behr Th.; Hommel D.; Waag A.; Landwehr G.

Growth mechanisms of CdTe during molecular beam epitaxy
J. Appl. Phys. 72, 3492 (1992)
Physikalisches Institut der Universität Würzburg, Am Hubland, D‐8700 Würzburg, Germany;
145.
1992

Hommel D.; Waag A.; Scholl S.; Landwehr G.

Chlorine: A new efficient n‐type dopant in CdTe layers grown by molecular beam epitaxy
Appl. Phys. Lett. 61, 1546 (1992)
Universität Würzburg, Physikalisches Institut, D‐8700 Würzburg, Germany;
146.
1992

Przybylińska H.; Godlewski M.; Hommel D.

Thermoluminescence mechanism in CdF2:Eu
Phys. Rev. B 46, 7395 (1992)
Institute of Physics, Polish Academy of Sciences, 02‐668 Warsaw, Poland;
147.
1991

Świa¸tek K.; Godlewski M.; Hommel D.

Recombination processes in ZnS:Sm
Phys. Rev. B 43, 9955 (1991)
Institute of Physics, Polish Academy of Sciences, 02‐668 Warsaw, aleja Lotników 32/46, Poland;
148.
1990

Świa¸tek K.; Godlewski M.; Hommel D.

Deep europium‐bound exciton in a ZnS lattice
Phys. Rev. B 42, 3628 (1990)
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL‐02‐668 Warszawa, Poland;

Co-authors

Co-publications
29

Gutowski, Jürgen
26

Einfeldt, Sven
26

Bacher, G
23

Landwehr, G
23

Forchel, Alfred
21

Kruse, Carsten
19

Figge, Stephan
14

Kümmell, T
14

Heinke, H
12

Leonardi, K
12

Behringer, M
12

Monemar, Bo
11

Paskova, Tanya
11

Sebald, Kathrin
10

Passow, Th.