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Hu, Evelyn L.

Computed

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Research Profile

Latest Publications

1.
2011

Aharonovich Igor; Niu Nan; Rol Fabian; Russell Kasey J.; Woolf Alexander; El-Ella Haitham A. R.; Kappers Menno J.; Oliver Rachel A; Hu Evelyn L.

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities
Appl. Phys. Lett. 99, 111111 (2011)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
2.
2011

Magyar Andrew P.; Lee Jonathan C.; Limarga Andi M.; Aharonovich Igor; Rol Fabian; Clarke David R.; Huang Mengbing; Hu Evelyn L.

Fabrication of thin, luminescent, single-crystal diamond membranes
Appl. Phys. Lett. 99, 081913 (2011)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
3.
2011

El-Ella H. A. R.; Rol F.; Kappers M. J.; Russell K. J.; Hu E. L.; Oliver R. A.

Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks
Appl. Phys. Lett. 98, 131909 (2011)
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom

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All Publications

1.
2011

Aharonovich Igor; Niu Nan; Rol Fabian; Russell Kasey J.; Woolf Alexander; El-Ella Haitham A. R.; Kappers Menno J.; Oliver Rachel A; Hu Evelyn L.

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities
Appl. Phys. Lett. 99, 111111 (2011)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
2.
2011

Magyar Andrew P.; Lee Jonathan C.; Limarga Andi M.; Aharonovich Igor; Rol Fabian; Clarke David R.; Huang Mengbing; Hu Evelyn L.

Fabrication of thin, luminescent, single-crystal diamond membranes
Appl. Phys. Lett. 99, 081913 (2011)
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
3.
2011

El-Ella H. A. R.; Rol F.; Kappers M. J.; Russell K. J.; Hu E. L.; Oliver R. A.

Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks
Appl. Phys. Lett. 98, 131909 (2011)
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
4.
2011

Rangel Elizabeth; Matioli Elison; Choi Yong-Seok; Weisbuch Claude; Speck James S.; Hu Evelyn L.

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
Appl. Phys. Lett. 98, 081104 (2011)
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
5.
2010

Russell Kasey J.; Hu Evelyn L.

Gap-mode plasmonic nanocavity
Appl. Phys. Lett. 97, 163115 (2010)
Harvard University School of Engineering and Applied Sciences, Harvard University, 304 McKay Laboratory, Cambridge, Massachusetts 02138, USA
6.
2010

Rangel Elizabeth; Matioli Elison; Chen Hung-Tse; Choi Yong-Seok; Weisbuch Claude; Speck James S.; Hu Evelyn L.

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
Appl. Phys. Lett. 97, 061118 (2010)
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
7.
2009

Tamboli Adele C.; Schmidt Mathew C.; Hirai Asako; DenBaars Steven P.; Hu Evelyn L.

Observation of whispering gallery modes in nonpolar m-plane GaN microdisks
Appl. Phys. Lett. 94, 251116 (2009)
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
8.
2009

Tamboli Adele C.; Hirai Asako; Nakamura Shuji; DenBaars Steven P.; Hu Evelyn L.

Photoelectrochemical etching of p-type GaN heterostructures
Appl. Phys. Lett. 94, 151113 (2009)
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
9.
2009

Tamboli Adele C.; Schmidt Mathew C.; Rajan Siddharth; Speck James S.; Mishra Umesh K.; DenBaars Steven P.; Hu Evelyn L.

Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN
J. Electrochem. Soc. 156, H47 (2009)
Materials Department and ;
10.
2008

Winger Martin; Badolato Antonio; Hennessy Kevin J.; Hu Evelyn L.; Imamoğlu Ataç

Quantum Dot Spectroscopy Using Cavity Quantum Electrodynamics
Phys. Rev. Lett. 101, 226808 (2008)
Insitute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland
11.
2008

McGroddy K.; David A.; Matioli E.; Iza M.; Nakamura S.; DenBaars S.; Speck J. S.; Weisbuch C.; Hu E. L.

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
Appl. Phys. Lett. 93, 103502 (2008)
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
12.
2008

David Aurélien; Moran Brendan; McGroddy Kelly; Matioli Elison; Hu Evelyn L.; DenBaars Steven P.; Nakamura Shuji; Weisbuch Claude

GaN/;InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth
Appl. Phys. Lett. 92, 113514 (2008)
Materials Department, University of California, Santa Barbara, California 93106, USA
13.
2007

Sharma Rajat; Choi Yong-Seok; Wang Chiou-Fu; David Aurélien; Weisbuch Claude; Nakamura Shuji; Hu Evelyn L.

Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
Appl. Phys. Lett. 91, 211108 (2007)
Materials Department, University of California, Santa Barbara, California 93106, USA
14.
2007

Wang C. F.; Hanson R.; Awschalom D. D.; Hu E. L.; Feygelson T.; Yang J.; Butler J. E.

Fabrication and characterization of two-dimensional photonic crystal microcavities in nanocrystalline diamond
Appl. Phys. Lett. 91, 201112 (2007)
Department of Physics, University of California, Santa Barbara, California 93106, USA
15.
2007

Choi Yong-Seok; Iza Michael; Matioli Elison; Koblmüller Gregor; Speck James S.; Weisbuch Claude; Hu Evelyn L.

2.5λ; microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
Appl. Phys. Lett. 91, 061120 (2007)
Materials Department, University of California, Santa Barbara, California 93106
16.
2007

Choi Y.-S.; Bouwmeester D.; Strauf S.; Badolato A.; Petroff P. M.; Rakher M. T.; Hennessy K.; Hu E. L.

Evolution of the onset of coherence in a family of photonic crystal nanolasers
Appl. Phys. Lett. 91, 031108 (2007)
University of California, Santa Barbara, California 93106
17.
2007

Choi Y.-S.; Davanço M.; Lee K. H.; Wang C.-F.; Mack J.; Blumenthal D.; Hu E. L.

Dispersive phase response in optical waveguide-resonator system
Appl. Phys. Lett. 90, 191108 (2007)
Department of Electrical and Computer Engineering, University of California, Santa Babara, California 93106
18.
2007

Wang C. F.; Yang J.; Hu E. L.; Butler J. E.

Fabrication of suspended single crystal diamond devices by electrochemical etch
J. Vac. Sci. Technol. B 25, 730 (2007)
Department of Physics, University of California, Santa Barbara, California 93106
19.
2007

Wang C. F.; Choi Y-S.; Lee J. C.; Hu E. L.; Yang J.; Butler J. E.

Observation of whispering gallery modes in nanocrystalline diamond microdisks
Appl. Phys. Lett. 90, 081110 (2007)
Department of Physics and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
20.
2006

Strauf S.; Petroff P. M.; Hu E. L.; Andreani L. C.; Badolato A.; Choi Y.-S.; Rakher M. T.; Hennessy K.; Bouwmeester D.

Self-Tuned Quantum Dot Gain in Photonic Crystal Lasers
Phys. Rev. Lett. 96, 127404 (2006)
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
21.
2006

David Aurélien; Fujii Tetsuo; Sharma Rajat; McGroddy Kelly; Nakamura Shuji; DenBaars Steven P.; Hu Evelyn L.; Weisbuch Claude; Benisty Henri

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
Appl. Phys. Lett. 88, 061124 (2006)
Materials Department, University of California, Santa Barbara, California 93106
22.
2006

Strauf S.; Rakher M. T.; Carmeli I.; Hennessy K.; Meier C.; Badolato A.; DeDood M. J. A.; Petroff P. M.; Hu E. L.; Gwinn E. G.; Bouwmeester D.

Frequency control of photonic crystal membrane resonators by monolayer deposition
Appl. Phys. Lett. 88, 043116 (2006)
University of California, Santa Barbara, Santa Barbara, California 93106
23.
2006

Meier Cedrik; Hennessy Kevin; Haberer Elaine D.; Sharma Rajat; Choi Yong-Seok; McGroddy Kelly; Keller Stacia; DenBaars Steven P.; Nakamura Shuji; Hu Evelyn L.

Visible resonant modes in GaN-based photonic crystal membrane cavities
Appl. Phys. Lett. 88, 031111 (2006)
Departments of Materials and Electrical & Computer Engineering, University of California—Santa Barbara, Santa Barbara, California 93106 and University of Duisburg–Essen, Experimental Physics, Lotharstr. 1, D-47048 Duisburg, Germany;
24.
2005

Choi Y.-S.; Hennessy K.; Sharma R.; Haberer E.; Gao Y.; DenBaars S. P.; Nakamura S.; Hu E. L.; Meier C.

GaN blue photonic crystal membrane nanocavities
Appl. Phys. Lett. 87, 243101 (2005)
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
25.
2005

Stern N. P.; Poggio M.; Bartl M. H.; Hu E. L.; Stucky G. D.; Awschalom D. D.

Spin dynamics in electrochemically charged CdSe quantum dots
Phys. Rev. B 72, 161303 (2005)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
26.
2005

Gerardot Brian D.; Strauf Stefan; Bouwmeester Dirk; Hu Evelyn L.; Hennessy Kevin; Badolato Antonio; Bychkov Andrey M.; de Dood Michiel J. A.; Petroff Pierre M.

Photon Statistics from Coupled Quantum Dots
Phys. Rev. Lett. 95, 137403 (2005)
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
27.
2005

Sharma R.; Haberer E. D.; Meier C.; Hu E. L.; Nakamura S.

Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
Appl. Phys. Lett. 87, 051107 (2005)
Materials Department, University of California, Santa Barbara, California 93106
28.
2005

Davanço Marcelo; Xing Aimin; Raring James; Hu Evelyn L.; Blumenthal Daniel J.

Detailed characterization of slow and dispersive propagation near a mini-stop-band of an InP photonic crystal waveguide
Opt. Express 13, 4931 (2005)
29.
2004

Gao Y.; Ben-Yaacov I.; Mishra U. K.; Hu E. L.

Optimization of AlGaN/;GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
J. Appl. Phys. 96, 6925 (2004)
Materials Department and Electrical & Computer Engineering Department, University of California, Santa Barbara, California 93106;
30.
2004

Haberer E. D.; Sharma R.; Meier C.; Stonas A. R.; Nakamura S.; DenBaars S. P.; Hu E. L.

Free-standing, optically pumped, GaN/;InGaN microdisk lasers fabricated by photoelectrochemical etching
Appl. Phys. Lett. 85, 5179 (2004)
Departments of Materials and Electrical and Computer Engineering, University of California–Santa Barbara, Santa Barbara, California 93106;
31.
2004

Haberer E. D.; Sharma R.; Stonas A. R.; Nakamura S.; DenBaars S. P.; Hu E. L.

Removal of thick (>100 ;nm)InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
Appl. Phys. Lett. 85, 762 (2004)
Materials Department and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
32.
2004

Xing Aimin; Darvanco Marcelo; Blumenthal Daniel J; Hu Evelyn L

InP photonic crystal membrane structures: Fabrication accuracy and optical performance
Appl. Phys. Lett. 85, 522 (2004)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106
33.
2004

Gao Yan; Fujii Tetsuo; Sharma Rajat; Fujito Kenji; Denbaars Steven P.; Nakamura Shuji; Hu Evelyn L.

Roughening Hexagonal Surface Morphology on Laser Lift‐Off (LLO) N‐Face GaN with Simple Photo‐Enhanced Chemical Wet Etching
Jpn. J. Appl. Phys., Part 2 43, L637 (2004)
Materials Department, University of California, Santa Barbara CA, 93106‐5050;
34.
2004

Gao Y.; Craven M. D.; Speck J. S.; Den Baars S. P.; Hu E. L.

Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride
Appl. Phys. Lett. 84, 3322 (2004)
Department of Materials and ERATO/JST UCSB Group, University of California, Santa Barbara, California 93106-5050;
35.
2004

Fujii T.; Gao Y.; Sharma R.; Hu E. L.; DenBaars S. P.; Nakamura S.

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Appl. Phys. Lett. 84, 855 (2004)
Materials Department, University of California, Santa Barbara, California 93106-5050;
36.
2004

Xing Aimin; Davanco Marcelo; Blumenthal Daniel J.; Hu Evelyn L.

Fabrication of InP-based two-dimensional photonic crystal membrane
J. Vac. Sci. Technol. B 22, 70 (2004)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106
37.
2002

Young D. K.; Zhang L.; Awschalom D. D.; Hu E. L.

Coherent coupling dynamics in a quantum-dot microdisk laser
Phys. Rev. B 66, 081307 (2002)
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106;
38.
2002

Mitchell William J.; Hu Evelyn L.

High-resolution in situ electron beam patterning using Ti(OC3H7)4 as a negative-type resist
J. Vac. Sci. Technol. B 20, 596 (2002)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106;
39.
2002

Jin-Phillipp N. Y.; Liu B.; Bowers J. E.; Hu E. L.; Kelsch M.; Thomas J.; Rühle M.

Interface of directly bonded InP wafers for vertical couplers
Appl. Phys. Lett. 80, 1346 (2002)
Max-Planck-Institut für Festköperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany;
40.
2001

Stonas A. R.; DenBaars S. P.; Turner K. L.; MacDonald N. C.; Hu E. L.

Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems
J. Vac. Sci. Technol. B 19, 2838 (2001)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
41.
2001

Haberer E. D.; Mishra U. K.; DenBaars S. P.; Keller S.; Hansen M.; Chen C. H.; Hu E. L.

Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN
J. Vac. Sci. Technol. B 19, 603 (2001)
Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106;
42.
2001

Stonas A. R.; Margalith T.; DenBaars S. P.; Coldren L. A.; Hu E. L.

Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications
Appl. Phys. Lett. 78, 1945 (2001)
Department of Electrical and Computer Engineering, Santa Barbara, California 93106
43.
2001

Beschoten B.; Johnston-Halperin E.; Young D. K.; Poggio M.; Grimaldi J. E.; Keller S.; DenBaars S. P.; Mishra U. K.; Hu E. L.; Awschalom D. D.

Spin coherence and dephasing in GaN
Phys. Rev. B 63, 121202 (2001)
Department of Physics, University of California, Santa Barbara, California 93106;
44.
2001

Mathis S. K.; Lau K. H. A.; Andrews A. M.; Hall E. M.; Almuneau G.; Hu E. L.; Speck J. S.

Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP
J. Appl. Phys. 89, 2458 (2001)
Materials Department, University of California, Santa Barbara, California 93106;
45.
2001

Jin-Phillipp N. Y.; Sigle W.; Black A.; Babic D.; Bowers J. E.; Hu E. L.; Rühle M.

Interface of directly bonded GaAs and InP
J. Appl. Phys. 89, 1017 (2001)
Max-Planck-Institut für Metallforschung, Seestr. 92, 70174 Stuttgart, Germany;
46.
2000

Stonas A. R.; Kozodoy P.; Marchand H.; Fini P.; DenBaars S. P.; Mishra U. K.; Hu E. L.

Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
Appl. Phys. Lett. 77, 2610 (2000)
Department of Electrical and Computer Engineering, University of California–Santa Barbara, Santa Barbara, California 93106;
47.
2000

Haberer Elaine D.; Chen Ching-Hui; Abare Amber; Hansen Monica; Denbaars Steve; Coldren Larry; Mishra Umesh; Hu Evelyn L.

Channeling as a mechanism for dry etch damage in GaN
Appl. Phys. Lett. 76, 3941 (2000)
Materials Department, University of California, Santa Barbara, California 93106;
48.
1999

Chen Ching-Hui; Mishra Umesh K.; Hu Evelyn L.; DenBaars Steven P.; Zhang Lidong; Haberer Elaine D.; Keller Stacia; Wu Yifeng

Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors
J. Vac. Sci. Technol. B 17, 2755 (1999)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
49.
1999

Bellomi G.; Mitchell W. J.; Hu E. L.

In situ preparation of the semiconductor–superconductor interface; Nb contacts on InAs quantum wells
J. Vac. Sci. Technol. B 17, 2001 (1999)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106;
50.
1999

Mitchell William J.; Hu Evelyn L.

Selective area chemical vapor deposition of titanium oxide films: Characterization of Ti(OC3H7)4 as an electron beam resist
J. Vac. Sci. Technol. B 17, 1622 (1999)
Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106;
51.
1999

Young D. K.; Mack M. P.; Abare A. C.; Hansen M.; Coldren L. A.; Denbaars S. P.; Hu E. L.; Awschalom D. D.

Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes
Appl. Phys. Lett. 74, 2349 (1999)
University of California, Santa Barbara, California 93106;
52.
1999

Mitchell William J.; Hu Evelyn L.

In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist
Appl. Phys. Lett. 74, 1916 (1999)
Center for Quantized Electronic Structures, University of California, Santa Barbara, Santa Barbara, California 93106;
53.
1999

Lehnert K. W.; Argaman N.; Blank H.-R.; Wong K. C.; Allen S. J.; Hu E. L.; Kroemer H.

Nonequilibrium ac Josephson Effect in Mesoscopic Nb-InAs-Nb Junctions
Phys. Rev. Lett. 82, 1265 (1999)
54.
1998

Chen Ching-Hui; Keller Stacia; Parish Gia; Vetury Ramakrishna; Kozodoy Peter; Hu Evelyn L.; Denbaars Steven P.; Mishra Umesh K.; Wu Yifeng

High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
Appl. Phys. Lett. 73, 3147 (1998)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
55.
1998

Schoenfeld W. V.; Chen C.-H.; Petroff P. M.; Hu E. L.

Argon ion damage in self-assembled quantum dots structures
Appl. Phys. Lett. 73, 2935 (1998)
Materials Department, University of California, Santa Barbara, California 93106;
56.
1998

Minsky Milan S.; Mishra Umesh K.; Keller Stacia; Hu Evelyn L.; Bowers John E.; Abare Amber C.; Fleischer Siegfried B.; Chichibu Shigefusa; DenBaars Steven P.

Optical properties of InGaN/GaN quantum wells with Si doped barriers
Jpn. J. Appl. Phys., Part 2 37, L1362 (1998)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
57.
1998

Chen Ching-Hui; Schoenfeld Winston V.; Hu Evelyn L.; Petroff Pierre M.

Metallization-induced damage in III–V semiconductors
J. Vac. Sci. Technol. B 16, 3354 (1998)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
58.
1998

Li Youli; Wong Gerard C. L.; Safinya Cyrus R.; Caine Ernie; Hu Evelyn L.; Haeffner Dean; Fernandez Patricia; Yun Wenbing

Bragg–Fresnel optics for hard x-ray microscopy; Development of fabrication process and x-ray characterization at the Advanced Photon Source
Rev. Sci. Instrum. 69, 2844 (1998)
Materials Research Laboratory, Materials Department and Physics Department, University of California, Santa Barbara, California 93106;
59.
1998

Yi S. I.; Hu E. L.; Chung C.-H.; Mitchell W. J.; Weinberg W. H.

Multilayer oxidation of AlAs by thermal and electron beam induced decomposition of H2O in ultrahigh vacuum
J. Vac. Sci. Technol. B 16, 2199 (1998)
University of California, Santa Barbara, Santa Barbara, California 93106;
60.
1998

Minsky M. S.; Fleischer S. B.; Abare A. C.; Bowers J. E.; Hu E. L.; Keller S.; Denbaars S. P.

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
Appl. Phys. Lett. 72, 1066 (1998)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
61.
1998

Crowell P. A.; Young D. K.; Keller S.; Hu E. L.; Awschalom D. D.

Near-field scanning optical spectroscopy of an InGaN quantum well
Appl. Phys. Lett. 72, 927 (1998)
University of California, Santa Barbara, California 93106;
62.
1997

Yu D. G.; DenBaars S. P.; Holmes A. L.; Chen C.-H.; Hu E. L.

Role of defect diffusion in the InP damage profile
J. Vac. Sci. Technol. B 15, 2672 (1997)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
63.
1997

Chen Ching-Hui; Chiu Yi-Jen; Hu Evelyn L.

Characterization of the radiation-enhanced diffusion of dry-etch damage in n-GaAs
J. Vac. Sci. Technol. B 15, 2648 (1997)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
64.
1997

Schramm Jeff E.; Babić Dubravko I.; Hu Evelyn L.; Bowers John E.; Merz James L.

Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching
J. Vac. Sci. Technol. B 15, 2031 (1997)
AMP Incorporated, Harrisburg, Pennsylvania 17105
65.
1997

Chen Ching-Hui; Ibbetson James P.; Hu Evelyn L.; Mishra Umesh K.

AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer
Appl. Phys. Lett. 71, 494 (1997)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
66.
1997

Mitchell W. J.; Chung C.-H.; Yi S. I.; Hu E. L.; Weinberg W. H.

Wet oxidation of AlAs films under ultrahigh vacuum conditions
J. Vac. Sci. Technol. B 15, 1182 (1997)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
67.
1997

Margalit Near M.; Streubel Klaus P.; Chiu Yijen; Hegblom Eric R.; Hou Hong Q.; Bowers John E.; Hu Evelyn L.

High-temperature 1.55-um vertical-cavity lasers through wafer fusion
Proc. SPIE Int. Soc. Opt. Eng. 3003, 169 (1997)
Univ. of California/Santa Barbara (USA)
68.
1997

Shi Song S.; Hu Evelyn L.; Zhang Jing-Ping; Chang Ying-lan; Parikh Primit; Mishra Umesh

Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface
Appl. Phys. Lett. 70, 1293 (1997)
Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106
69.
1996

Chen Ching-Hui; Yu D. Ginger; Hu Evelyn L.; Petroff Pierre M.

Photoluminescence studies on radiation enhanced diffusion of dry‐etch damage in GaAs and InP materials
J. Vac. Sci. Technol. B 14, 3684 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
70.
1996

Yu D. G.; Chen C.-H.; Keller B. P.; Holmes A. L.; Hu E. L.; Baars S. P. Den

Investigation of improved regrown material on InP surfaces etched with methane/hydrogen/argon
J. Vac. Sci. Technol. B 14, 3674 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
71.
1996

Hu Evelyn L.; Chen Ching-Hui; Green Debora L.

Low‐energy ion damage in semiconductors; A progress report
J. Vac. Sci. Technol. B 14, 3632 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
72.
1996

Chen Ching-Hui; Hu Evelyn L.; Mishra Umesh K.; Ibbetson James P.; Wu Xuehua; Speck Jim S.

Improvement in low energy ion‐induced damage with a low temperature GaAs capping layer
Appl. Phys. Lett. 69, 1728 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
73.
1996

Margalit Near M.; Babic Dubravko I.; Streubel Klaus; Mirin Richard P.; Mars Dan E.; Bowers John E.; Hu Evelyn L.

Laterally oxidized long wavelength cw vertical‐cavity lasers
Appl. Phys. Lett. 69, 471 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
74.
1996

Thomas Mason; Blank Hans-Richard; Kroemer Herbert; Nguyen Chanh; Wong K. C.; Hu Evelyn L.

Flux‐periodic resistance oscillations in arrays of superconducting weak links based on InAs‐AlSb quantum wells with Nb electrodes
Phys. Rev. B 54, R2311 (1996)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
75.
1996

Chen Ching-Hui; Green Debora L.; Hu Evelyn L.; Ibbetson James P.; Petroff Pierre M.

Radiation enhanced diffusion of low energy ion‐induced damage
Appl. Phys. Lett. 69, 58 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
76.
1996

Koester S. J.; Brar B.; Bolognesi C. R.; Caine E. J.; Patlach A.; Hu E. L.; Kroemer H.; Rooks M. J.

Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells
Phys. Rev. B 53, 13063 (1996)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
77.
1996

Olsen J. A.; Hu E. L.; Lee S. R.; Fritz I. J.; Howard A. J.; Hammons B. E.; Tsao J. Y.

X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers
J. Appl. Phys. 79, 3578 (1996)
Department of Materials Engineering, University of California, Santa Barbara, Santa Barbara, California 93107
78.
1996

Minsky M. S.; White M.; Hu E. L.

Room‐temperature photoenhanced wet etching of GaN
Appl. Phys. Lett. 68, 1531 (1996)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
79.
1995

Yu D. G.; Keller B. P.; Holmes A. L.; Hu E. L.; DenBaars S. P.

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures
J. Vac. Sci. Technol. B 13, 2381 (1995)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
80.
1995

Chen Ching-Hui; Green Debora L.; Hu Evelyn L.

Diffusion and channeling of low‐energy ions; The mechanism of ion damage
J. Vac. Sci. Technol. B 13, 2355 (1995)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
81.
1995

Strand T. A.; Thibeault B. J.; Mui D. S. L.; Coldren L. A.; Petroff P. M.; Hu E. L.

Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by ;insitu processing
Appl. Phys. Lett. 66, 1966 (1995)
Electrical and Computer Engineering Department, University of California–Santa Barbara, Santa Barbara, California 93106;
82.
1995

Babić Dubravko I.; Dudley James J.; Streubel Klaus; Mirin Richard P.; Bowers John E.; Hu Evelyn L.

Double‐fused 1.52‐μm vertical‐cavity lasers
Appl. Phys. Lett. 66, 1030 (1995)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
83.
1994

Yu D. G.; Hu E. L.; Hasnain G.

Radical beam ion‐beam etching of InAlAs/InP using Cl;2
J. Vac. Sci. Technol. B 12, 3378 (1994)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
84.
1994

Green D. L.; Hu E. L.; Stoffel N. G.

Effect of superlattices on the low‐energy ion‐induced damage in GaAs/Al(Ga)As structures; Channeling or diffusion?
J. Vac. Sci. Technol. B 12, 3311 (1994)
Department of Electrical and Computer Engineering, University of California–Santa Barbara, Santa Barbara, California 93106;
85.
1994

Tseng M. Z.; Jiang W. N.; Hu E. L.

Measurements and analysis of Hall effect of a two dimensional electron gas in the close proximity of a superconducting YBa2Cu3O7-;x film
J. Appl. Phys. 76, 3562 (1994)
Department of Electrical and Computer Engineering and Department of Materials Engineering, University of California, Santa Barbara, California 93106
86.
1994

Koester S. J.; Bolognesi C. R.; Thomas M.; Hu E. L.; Kroemer H.; Rooks M. J.

Determination of one‐dimensional subband spacings in InAs/AlSb ballistic constrictions using magnetic‐field measurements
Phys. Rev. B 50, 5710 (1994)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
87.
1994

Nguyen Chanh; Kroemer Herbert; Hu Evelyn L.

Contact resistance of superconductor‐semiconductor interfaces; The case of Nb‐InAs/AlSb quantum‐well structures
Appl. Phys. Lett. 65, 103 (1994)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
88.
1994

Dudley J. J.; Babić D. I.; Mirin R.; Yang L.; Miller B. I.; Ram R. J.; Reynolds T.; Hu E. L.; Bowers J. E.

Low threshold, wafer fused long wavelength vertical cavity lasers
Appl. Phys. Lett. 64, 1463 (1994)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
89.
1994

J. Koester Steven; Bolognesi Colombo R.; Hu Evelyn L.; Kroemer Herbert; Rooks Michael J.

Quantized conductance in an InAs/AlSb split‐gate ballistic constriction with 1.0 μm channel length
Phys. Rev. B 49, 8514 (1994)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
90.
1993

Koester S. J.; Bolognesi C. R.; Hu E. L.; Kroemer H.; Rooks M. J.; Snider G. L.

Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage
J. Vac. Sci. Technol. B 11, 2528 (1993)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
91.
1993

Khare Reena; Hu Evelyn L.; Brown Julia J.; Melendes Melissa A.

Micromachining in III–V semiconductors using wet photoelectrochemical etching
J. Vac. Sci. Technol. B 11, 2497 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
92.
1993

Schramm Jeff E.; Hu Evelyn L.; Merz James L.; Brown Julia J.; Melendes Melissa A.; Thompson Mark A.; Brown April S.

Highly selective reactive ion etch process for InP‐based device fabrication using methane/hydrogen/argon
J. Vac. Sci. Technol. B 11, 2280 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
93.
1993

Mui D. S. L.; Strand T. A.; Thibeault B. J.; Coldren L. A.; Petroff P. M.; Hu E. L.

Characteristics of insitu Cl2 etched/regrown GaAs/GaAs interfaces
J. Vac. Sci. Technol. B 11, 2266 (1993)
The Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
94.
1993

Green D. L.; Hu E. L.; Petroff P. M.; Liberman V.; Nooney M.; Martin R.

Characterization of low energy ion‐induced damage using the multiple quantum well probe technique with an intervening superlattice
J. Vac. Sci. Technol. B 11, 2249 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
95.
1993

Tsutsui K.; Hu E. L.; Wilkinson C. D. W.

Controlling the profile of nanostructures
J. Vac. Sci. Technol. B 11, 2233 (1993)
Department of Applied Electronics, Tokyo Institute of Technology, 4529 Nagatsuda, Yokohama, Japan
96.
1993

Schramm Jeff E.; Babic Dubravko I.; Hu Evelyn L.; Merz James L.

Reactive ion etcher self‐bias voltage regulator
J. Vac. Sci. Technol. A 11, 2858 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
97.
1993

Tseng M. Z.; Hu S. Y.; Chang Y. L.; Jiang W. N.; Hu E. L.

Minimum thickness MgO buffer layers for YBa2Cu3O7-;x/GaAs structures; Assessment using photoluminescence of multiple‐quantum‐well structures
Appl. Phys. Lett. 63, 987 (1993)
Department of Electrical Engineering and Department of Material Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
98.
1993

Chang Ying-Lan; Frova A.; Petroff Pierre M.; Merz James L.; Hu Evelyn L.; Tan I-Hsing; Krishnamurthy Mohan; Emiliani V.

Study of temperature dependent hydrogenation on near‐surface strained quantum wells
J. Vac. Sci. Technol. B 11, 1702 (1993)
Center for Quantized Electronic Structure (QUEST), University of California, Santa Barbara, California 93106
99.
1993

Khare R.; Young D. B.; Hu E. L.

The Bandgap‐Selective Photoelectrochemical Etching of GaAs/;AlxGa1-x;As Heterostructures with Varying Mole Fraction
J. Electrochem. Soc. 140, L117 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
100.
1993

Dudley James J.; Babic Dubravko I.; Wada H.; Shimizu M.; Mirin R.; Bowers John E.; Hu Evelyn L.

InGaAsP vertical-cavity lasers
Proc. SPIE Int. Soc. Opt. Eng. 1850, 86 (1993)
Univ. of California/Santa Barbara (USA)
101.
1993

Skidmore J. A.; Lishan D. G.; Young D. B.; Hu E. L.; Coldren L. A.

Effects of Hydrogen on Chlorine Radical‐Beam Ion‐Beam Etching of ;AlxGa1-x;As with Varying Mole Fraction
J. Electrochem. Soc. 140, 1802 (1993)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
102.
1993

Khare R.; Young D. B.; Snider G. L.; Hu E. L.

Effect of band structure on etch‐stop layers in the photoelectrochemical etching of GaAs/AlGaAs semiconductor structures
Appl. Phys. Lett. 62, 1809 (1993)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
103.
1993

Koester S. J.; Bolognesi C. R.; Rooks M. J.; Hu E. L.; Kroemer H.

Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells
Appl. Phys. Lett. 62, 1373 (1993)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
104.
1993

Green D. L.; Skidmore J. A.; Lishan D. G.; Hu E. L.; Petroff P. M.

Calibration of the multiple quantum well probe technique for dry‐etch‐induced damage analysis
Appl. Phys. Lett. 62, 1253 (1993)
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106
105.
1992

Dudley J. J.; Ishikawa M.; Babic D. I.; Miller B. I.; Mirin R.; Jiang W. B.; Bowers J. E.; Hu E. L.

144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
Appl. Phys. Lett. 61, 3095 (1992)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
106.
1992

Khare R.; Hu E. L.; Reynolds D.; Allen S. J.

Photoelectrochemical etching of high aspect ratio submillimeter waveguide filters from n+ GaAs wafers
Appl. Phys. Lett. 61, 2890 (1992)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
107.
1992

Nguyen Chanh; Kroemer Herbert; Hu Evelyn L.

Anomalous Andreev conductance in InAs‐AlSb quantum well structures with Nb electrodes
Phys. Rev. Lett. 69, 2847 (1992)
Department of Electrical and Computer Engineering, University of California(enSanta Barbara, Santa Barbara, California 93106
108.
1992

Skidmore J. A.; Lishan D. G.; Young D. B.; Hu E. L.; Coldren L. A.

HCl, H2, and Cl2 radical‐beam ion‐beam etching of Al;xGa1-;xAs substrates with varying Al mole fraction
J. Vac. Sci. Technol. B 10, 2720 (1992)
Department of Electrical & Computer Engineering, University of California, Santa Barbara, California 93106;
109.
1992

Tseng M. Z.; Nguyen C.; Tarsa E.; Chang L. D.; Hu E. L.; Kroemer H.

Temperature‐dependent mobility of a GaAs/AlGaAs heterostructure after deposition of MgO and superconducting YBa;2Cu3O7-;x
Appl. Phys. Lett. 61, 601 (1992)
Department of Electrical and Computer Engineering, and Department of Materials Engineering, University of California, Santa Barbara, California 93106
110.
1992

Skidmore Jay A.; Spiers Guy D.; English John H.; Hu Evelyn L.; Coldren Larry A.; Prater Craig B.; Xu Zheng; Petroff Pierre M.

Low-damage anisotropic radical-beam ion-beam etching and selective chemical etching of focused-ion-beam-damaged GaAs substrates
Proc. SPIE Int. Soc. Opt. Eng. 1671, 268 (1992)
Univ. of California/Santa Barbara (USA)
111.
1992

Tan I-Hsing; Mirin Richard; Yasuda Takashi; Hu Evelyn L.; Bowers John; Prater Craig B.; Hansma Paul K.; He Ming Yuan; Evans Anthony G.

Study of partial strain release and surface states formed on the sidewall of InGaAs quantum‐well wires
J. Vac. Sci. Technol. B 10, 1971 (1992)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
112.
1992

Babić Dubravko I.; Reynolds Thomas E.; Hu Evelyn L.; Bowers John E.

Insitu characterization of sputtered thin films using a normal incidence laser reflectometer
J. Vac. Sci. Technol. A 10, 939 (1992)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
113.
1992

Mirin Richard P.; Tan I-Hsing; Weman Helge; Leonard Marilyn; Yasuda Takashi; Bowers John E.; Hu Evelyn L.

InGaAs quantum well wires grown on patterned GaAs substrates
J. Vac. Sci. Technol. A 10, 697 (1992)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
114.
1992

Prater C. B.; Hansma P. K.; Tan I-H.; Lishan D. G.; Hu E. L.

Detection of residual photoresist with the atomic force microscope
J. Vac. Sci. Technol. B 10, 1211 (1992)
Department of Physics, University of California, Santa Barbara, California 93106‐9530;
115.
1992

Chang L. D.; Tseng M. Z.; Hu E. L.; Fork D. K.

Epitaxial MgO buffer layers for YBa2Cu3O7-;x thin film on GaAs
Appl. Phys. Lett. 60, 1753 (1992)
Department of Electrical and Computer Engineering, UC Santa Barbara, California 93106
116.
1992

Babic Dubravko I.; Reynolds Thomas E.; Hu Evelyn L.; Bowers John E.

Reactive sputtering of Si/SiNx quarter-wave dielectric mirrors using in-situ laser reflectometry
Proc. SPIE Int. Soc. Opt. Eng. 1593, 194 (1992)
Univ. of California/Santa Barbara (USA)
117.
1991

Snider Gregory L.; Miller Mark S.; Rooks Michael J.; Hu Evelyn L.

Quantized conductance in ballistic constrictions at 30 K
Appl. Phys. Lett. 59, 2727 (1991)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
118.
1991

Lishan David G.; Snider Gregory L.; Hu Evelyn L.

Insitu device electrical parameter adjustment and monitoring during remote plasma dry etching
J. Vac. Sci. Technol. B 9, 3542 (1991)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
119.
1991

Skidmore J. A.; Coldren L. A.; Hu E. L.; Olsen J. A.; Young D. B.; Green D. L.; Petroff P. M.

Investigation of radical‐beam ion‐beam etching‐induced damage in GaAs/AlGaAs quantum‐well structures
J. Vac. Sci. Technol. B 9, 3516 (1991)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
120.
1991

Tan I.-H.; Lishan D. G.; Mirin R.; Jayaraman V.; Yasuda T.; Prater C. B.; Hu E. L.; Bowers J. E.; Hansma P. K.

Strain‐induced lateral confinement of excitons in GaAs/AlGaAs quantum well by chemical dry etching
J. Vac. Sci. Technol. B 9, 3498 (1991)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
121.
1991

Rooks M. J.; Eugster C. C.; del Alamo J. A.; Snider G. L.; Hu E. L.

Split‐gate electron waveguide fabrication using multilayer poly(methylmethacrylate)
J. Vac. Sci. Technol. B 9, 2856 (1991)
National Nanofabrication Facility at Cornell University, Ithaca, New York 14853
122.
1991

Chang L. D.; Tseng M. Z.; Samoska L. A.; O'Shea J. J.; Li Y. J.; Caine E. J.; Hu E. L.; Petroff P. M.; Kroemer H.

Insitu YBa2Cu3O7-;x superconductor films on GaAs/AlAs superlattices
J. Appl. Phys. 70, 5108 (1991)
Department of Electrical and Computer Engineering and Department of Materials, University of California, Santa Barbara, California 93106
123.
1991

Tan I-Hsing; Lishan David; Mirin Richard; Jayaraman Vijay; Yasuda Takashi; Hu Evelyn L.; Bowers John

Systematic observation of strain‐induced lateral quantum confinement in GaAs quantum well wires prepared by chemical dry etching
Appl. Phys. Lett. 59, 1875 (1991)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
124.
1991

Werking James; Schramm Jeff; Nguyen Chanh; Hu Evelyn L.; Kroemer Herbert

Methane/hydrogen‐based reactive ion etching of InAs, InP, GaAs, and GaSb
Appl. Phys. Lett. 58, 2003 (1991)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
125.
1991

Babic D. I.; Dudley J. J.; Shirazi M.; Hu E. L.; Bowers J. E.

Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control
J. Vac. Sci. Technol. A 9, 1113 (1991)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
126.
1991

Khare Reena; Hu Evelyn L.

Dopant Selective Photoelectrochemical Etching of GaAs Homostructures
J. Electrochem. Soc. 138, 1516 (1991)
Department of Electrical and Computer Engineering, The University of California, Santa Barbara, California 93106
127.
1991

Hu Evelyn L.

Current trends and issues for low-damage dry etching of optoelectronic devices
Proc. SPIE Int. Soc. Opt. Eng. 1361, 512 (1991)
Univ. of California/Santa Barbara (USA)
128.
1990

Zou W. X.; Law K-K.; Gossard A. C.; Hu E. L.; Coldren L. A.; Merz J. L.

Low‐threshold high‐efficiency high‐yield impurity‐induced layer disordering laser by self‐aligned Si‐Zn diffusion
Appl. Phys. Lett. 57, 2534 (1990)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
129.
1990

Snider G. L.; Tan I.-H.; Hu E. L.

Large subband spacings in δ‐doped quantum wires
J. Appl. Phys. 68, 5922 (1990)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
130.
1990

Lishan David G.; Hu Evelyn L.

Chlorine and HCl radical beam etching of III–V semiconductors
J. Vac. Sci. Technol. B 8, 1951 (1990)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
131.
1990

Tan I-H.; Snider G. L.; Chang L. D.; Hu E. L.

A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh
J. Appl. Phys. 68, 4071 (1990)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
132.
1990

Snider G. L.; Tan I.-H.; Hu E. L.

Electron states in mesa‐etched one‐dimensional quantum well wires
J. Appl. Phys. 68, 2849 (1990)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
133.
1990

Werking James; Tuttle Gary; Nguyen Chanh; Hu Evelyn L.; Kroemer Herbert

InAs‐AlSb heterostructure field‐effect transistors fabricated using argon implantation for device isolation
Appl. Phys. Lett. 57, 905 (1990)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
134.
1990

Nguyen Chanh; Werking James; Kroemer Herbert; Hu Evelyn L.

InAs‐AlSb quantum well as superconducting weak link with high critical current density
Appl. Phys. Lett. 57, 87 (1990)
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, California 93106
135.
1990

Rao M. R.; Tarsa E. J.; Samoska L. A.; English J. H.; Gossard A. C.; Kroemer H.; Petroff P. M.; Hu E. L.

Superconducting YBaCuO thin films on GaAs/AlGaAs
Appl. Phys. Lett. 56, 1905 (1990)
Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106
136.
1990

Lishan David G.; Hu Evelyn L.

Cl2 and HCl radical beam etching of GaAs and InP
Appl. Phys. Lett. 56, 1667 (1990)
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
137.
1990

Rao M. R.; Tarsa E. J.; Kroemer H.; Gossard A. C.; Hu E. L.; Petroff P. M.; Olson W. L.; Eddy M. M.

Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film
Appl. Phys. Lett. 56, 490 (1990)
Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106
138.
1989

Lishan D. G.; Wong H. F.; Green D. L.; Hu E. L.; Merz J. L.; Kirillov D.

Dry etch induced damage in GaAs investigated using Raman scattering spectroscopy
J. Vac. Sci. Technol. B 7, 556 (1989)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
139.
1988

Skidmore J. A.; Coldren L. A.; Hu E. L.; Merz J. L.; Asakawa K.

Use of independently controlled Cl radical and Ar ion beams for anisotropic chemically enhanced etching of GaAs
Appl. Phys. Lett. 53, 2308 (1988)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
140.
1988

Wong H. F.; Green D. L.; Liu T. Y.; Lishan D. G.; Bellis M.; Hu E. L.; Petroff P. M.; Holtz P. O.; Merz J. L.

Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures
J. Vac. Sci. Technol. B 6, 1906 (1988)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
141.
1988

Skidmore J. A.; Coldren L. A.; Hu E. L.; Merz J. L.; Asakawa K.

Radical beam/ion beam etching of GaAs
J. Vac. Sci. Technol. B 6, 1885 (1988)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
142.
1988

Zou W. X.; Corzine S.; Vawter G. A.; Merz J. L.; Coldren L. A.; Hu E. L.

Self‐aligned Si‐Zn diffusion into GaAs and AlGaAs
J. Appl. Phys. 64, 1855 (1988)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
143.
1987

Vawter G. Allen; Coldren Larry A.; Merz James L.; Hu Evelyn L.

Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load‐locked system
Appl. Phys. Lett. 51, 719 (1987)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
144.
1987

Omura E.; Wu X. S.; Vawter G. A.; Hu E. L.; Coldren L. A.; Merz J. L.

Silicon diffusion into AlxGa1-;xAs (x=0–0.4) from a sputtered silicon film
Appl. Phys. Lett. 50, 265 (1987)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106

Co-authors

Co-publications
25

DenBaars, Steven P.
19

Petroff, Pierre M.
18

Bowers, John E.
16

Kroemer, Herbert
15

Coldren, Larry
12

Mishra, Umesh K.
12

Nakamura, Shuji
12

Merz, James
9

Sharma, Rajat
8

Keller, Stacia
8

Speck, James S.
8

Haberer, Elaine D.
7

Hennessy, Kevin
7

Choi, Y.-S.
7

Weisbuch, Claude