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Hirakawa, Kazuhiko

Computed

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Research Profile

Latest Publications

1.
2011

Cha Kyu Man; Shibata Kenji; Kamiko Masao; Yamamoto Ryoichi; Hirakawa Kazuhiko

Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 50, 120205 (2011)
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
2.
2011

Ihara T.; Hirakawa K.; Cardenas J. R.; Ferreira R.; Bastard G.

Excitonic and Continuum Contributions to Terahertz Emission from Semiconductor Superlattices
AIP Conf. Proc. 1399, 427 (2011)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan
3.
2011

Kim S.; Ishiguro R.; Kamio M.; Doda Y.; Watanabe E.; Tsuya D.; Shibata K.; Hirakawa K.; Takayanagi H.

Side‐gate controlled electrical properties of superconducting quantum interference device coupled with self‐assembled InAs quantum dot
AIP Conf. Proc. 1399, 383 (2011)
International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305‐0044, Japan

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All Publications

1.
2011

Cha Kyu Man; Shibata Kenji; Kamiko Masao; Yamamoto Ryoichi; Hirakawa Kazuhiko

Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 1 50, 120205 (2011)
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
2.
2011

Ihara T.; Hirakawa K.; Cardenas J. R.; Ferreira R.; Bastard G.

Excitonic and Continuum Contributions to Terahertz Emission from Semiconductor Superlattices
AIP Conf. Proc. 1399, 427 (2011)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan
3.
2011

Kim S.; Ishiguro R.; Kamio M.; Doda Y.; Watanabe E.; Tsuya D.; Shibata K.; Hirakawa K.; Takayanagi H.

Side‐gate controlled electrical properties of superconducting quantum interference device coupled with self‐assembled InAs quantum dot
AIP Conf. Proc. 1399, 383 (2011)
International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305‐0044, Japan
4.
2011

Grochol M.; Ihara T.; Ferreira R.; Hirakawa K.; Bastard G.

Boltzmann Approach Beyond the Relaxation Time Approximation for Transient Bloch Emission from Semiconductor Superlattices
AIP Conf. Proc. 1399, 359 (2011)
Laboratoire Pierre Aigrain, Ecole Normale Supérieure and Centre National de la Recherche Scientifique, 24 rue Lhomond, F75005 Paris, France
5.
2011

Park K. H.; Takagi S.; Hirakawa K.

Remote impurity scattering in Si MOSFETs with thin gate oxides ‐ possible screening effect by mobile charges in the gate electrodes ‐
AIP Conf. Proc. 1399, 353 (2011)
Institute of Industrial Science and INQIE, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan
6.
2011

Shibata K.; Seki K.; Cha K. M.; Horiuchi I.; Hirakawa K.

Growth of self‐assembled InAs quantum dashes and their applications to single electron transistors
AIP Conf. Proc. 1399, 273 (2011)
IIS, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan
7.
2011

Cha K. M.; Shibata K.; Horiuchi I.; Kamiko M.; Yamamoto R.; Hirakawa K.

Chemical composition and thermal stability of GaAs oxides grown by AFM anodic oxidation for site‐controlled growth of InAs quantum dots
AIP Conf. Proc. 1399, 239 (2011)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan
8.
2011

Shibata K.; Seki K.; Luukko P. J. J.; Räsänen E.; Cha K. M.; Horiuchi I.; Hirakawa K.

Electronic structures in single self-assembled InAs quantum dashes detected by nanogap metal electrodes
Appl. Phys. Lett. 99, 182104 (2011)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
9.
2011

Deacon R. S.; Kanai Y.; Takahashi S.; Oiwa A.; Yoshida K.; Shibata K.; Hirakawa K.; Tokura Y.; Tarucha S.

Electrically tuned g tensor in an InAs self-assembled quantum dot
Phys. Rev. B 84, 041302 (2011)
Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656, Japan
10.
2011

Unuma Takeya; Ino Yusuke; Peiponen Kai-Erik; Vartiainen Erik M.; Kuwata-Gonokami Makoto; Hirakawa Kazuhiko

Causality-based method for determining the time origin in terahertz emission spectroscopy
Opt. Express 19, 12759 (2011)
11.
2011

Unuma Takeya; Takata Soichirou; Sakasegawa Yohei; Hirakawa Kazuhiko; Nakamura Arao

Intersubband transition energy and linewidth modified by a submonolayer AlAs insertion into GaAs quantum wells
J. Appl. Phys. 109, 043506 (2011)
Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
12.
2011

Kim S.; Ishiguro R.; Kamio M.; Doda Y.; Watanabe E.; Tsuya D.; Shibata K.; Hirakawa K.; Takayanagi H.

π junction transition in InAs self-assembled quantum dot coupled with SQUID
Appl. Phys. Lett. 98, 063106 (2011)
International Center for Materials Nanoarchitectonics(MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
13.
2010

Sakata Shuichi; Umeno Akinori; Yoshida Kenji; Hirakawa Kazuhiko

Critical Voltage for Atom Migration in Ballistic Copper Nanojunctions and Its Implications to Interconnect Technology for Very Large Scale Integrated Circuits
Appl. Phys. Express 3, 115201 (2010)
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
14.
2010

Sakasegawa Y.; Ihara T.; Hirakawa K.

Terahertz photonic band gap for the transverse-magnetic modes formed by using a planar waveguide structure with a photonic crystal electrode
Appl. Phys. Lett. 97, 051110 (2010)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
15.
2010

Kanai Y.; Deacon R. S.; Oiwa A.; Yoshida K.; Shibata K.; Hirakawa K.; Tarucha S.

Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction
Phys. Rev. B 82, 054512 (2010)
Department of Applied Physics and QPEC, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-8656, Japan
16.
2010

Unuma Takeya; Ino Yusuke; Kuwata-Gonokami Makoto; Vartiainen Erik M.; Peiponen Kai-Erik; Hirakawa Kazuhiko

Determination of the time origin by ?the maximum entropy method in ?time-domain terahertz emission spectroscopy
Opt. Express 18, 15853 (2010)
17.
2010

Cárdenas J. R.; Ihara T.; Ferreira R.; Hirakawa K.; Bastard G.

Excitation spectra of terahertz Bloch emission in semiconductor superlattices
Phys. Rev. B 82, 041310 (2010)
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, 24 rue Lhomond, 75005 Paris, France
18.
2010

Takahashi S.; Deacon R. S.; Yoshida K.; Oiwa A.; Shibata K.; Hirakawa K.; Tokura Y.; Tarucha S.

Large Anisotropy of the Spin-Orbit Interaction in a Single InAs Self-Assembled Quantum Dot
Phys. Rev. Lett. 104, 246801 (2010)
Department of Applied Physics and QPEC, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
19.
2010

Yoshida Kenji; Umeno Akinori; Sakata Shuichi; Hirakawa Kazuhiko

Structural Stability of Ni Quantum Point Contacts under Electrical Stresses
Appl. Phys. Express 3, 045001 (2010)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, Meguro, Tokyo 153-8505, Japan
20.
2010

Unuma T.; Ino Y.; Kuwata-Gonokami M.; Bastard G.; Hirakawa K.

Transient Bloch oscillation with the symmetry-governed phase in semiconductor superlattices
Phys. Rev. B 81, 125329 (2010)
Institute of Industrial Science and INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
21.
2010

Deacon R. S.; Tanaka Y.; Oiwa A.; Sakano R.; Yoshida K.; Shibata K.; Hirakawa K.; Tarucha S.

Kondo-enhanced Andreev transport in single self-assembled InAs quantum dots contacted with normal and superconducting leads
Phys. Rev. B 81, 121308 (2010)
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-8656, Japan
22.
2010

Deacon R. S.; Tanaka Y.; Oiwa A.; Sakano R.; Yoshida K.; Shibata K.; Hirakawa K.; Tarucha S.

Tunneling Spectroscopy of Andreev Energy Levels in a Quantum Dot Coupled to a Superconductor
Phys. Rev. Lett. 104, 076805 (2010)
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656, Japan
23.
2009

Ferreira Robson; Unuma Takeya; Hirakawa Kazuhiko; Bastard Gerald

A Boltzmann Approach to Transient Bloch Emission from Semiconductor Superlattices
Appl. Phys. Express 2, 062101 (2009)
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond F75005 Paris, France
24.
2009

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Ishida S.; Taniyama T.; Hirakawa K.; Arakawa Y.; Machida T.

Spin-Related Current Suppression in a Semiconductor Quantum Dot Spin-Diode Structure
Phys. Rev. Lett. 102, 236806 (2009)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
25.
2009

Shibata K.; Jung M.; Cha K. M.; Sotome M.; Hirakawa K.

Effect of In–Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes
Appl. Phys. Lett. 94, 162107 (2009)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
26.
2009

Umeno A.; Hirakawa K.

Nonthermal origin of electromigration at gold nanojunctions in the ballistic regime
Appl. Phys. Lett. 94, 162103 (2009)
Institute of Industrial Science and INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
27.
2009

Yasuda H.; Kubis T.; Vogl P.; Sekine N.; Hosako I.; Hirakawa K.

Nonequilibrium Green’s function calculation for four-level scheme terahertz quantum cascade lasers
Appl. Phys. Lett. 94, 151109 (2009)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
28.
2009

Ueda Takeji; Komiyama Susumu; An Zhenghua; Nagai Naomi; Hirakawa Kazuhiko

Temperature dependence of the performance of charge-sensitive infrared phototransistors
J. Appl. Phys. 105, 064517 (2009)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
29.
2009

Masubuchi S.; Ono M.; Yoshida K.; Hirakawa K.; Machida T.

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope
Appl. Phys. Lett. 94, 082107 (2009)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
30.
2008

Zhu Y. M.; Unuma T.; Shibata K.; Hirakawa K.; Ino Y.; Kuwata-Gonokami M.

Power dissipation spectra and terahertz intervalley transfer gain in bulk GaAs under high electric fields
Appl. Phys. Lett. 93, 232102 (2008)
Institute of Industrial Science and INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
31.
2008

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Ishida S.; Taniyama T.; Hirakawa K.; Arakawa Y.; Machida T.

Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve
Appl. Phys. Lett. 93, 222107 (2008)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan
32.
2008

Shibata K.; Hirakawa K.

High Kondo temperature (TK∼80 ;K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes
Appl. Phys. Lett. 93, 062101 (2008)
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
33.
2008

Zhu Y. M.; Unuma T.; Shibata K.; Hirakawa K.

Femtosecond acceleration of electrons under high electric fields in bulk GaAs investigated by time-domain terahertz spectroscopy
Appl. Phys. Lett. 93, 042116 (2008)
Institute of Industrial Science and INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan
34.
2008

Ueda Takeji; An Zhenghua; Hirakawa Kazuhiko; Komiyama Susumu

Charge-sensitive infrared phototransistors: Characterization by an all-cryogenic spectrometer
J. Appl. Phys. 103, 093109 (2008)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
35.
2008

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Ishida S.; Taniyama T.; Hirakawa K.; Arakawa Y.; Machida T.

Oscillatory changes in the tunneling magnetoresistance effect in semiconductor quantum-dot spin valves
Phys. Rev. B 77, 081302 (2008)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
36.
2007

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Hirakawa K.; Machida T.; Taniyama T.; Ishida S.; Arakawa Y.

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes
Appl. Phys. Lett. 91, 232105 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
37.
2007

Kondo T.; Hirakawa K.

Terahertz radiation from ultrahigh-speed field-effect transistors induced by ultrafast optical gate switching
Appl. Phys. Lett. 91, 191120 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguroku, Tokyo 153-8505, Japan
38.
2007

Ikushima K.; Sakuma H.; Komiyama S.; Hirakawa K.

Visualization of quantum Hall edge channels through imaging of terahertz emission
Phys. Rev. B 76, 165323 (2007)
Department of Basic Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8902, Japan
39.
2007

Buizert C.; Oiwa A.; Shibata K.; Hirakawa K.; Tarucha S.

Kondo Universal Scaling for a Quantum Dot Coupled to Superconducting Leads
Phys. Rev. Lett. 99, 136806 (2007)
Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656, Japan
40.
2007

Park K. H.; Unuma T.; Hirakawa K.; Takagi S.

Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett. 91, 132118 (2007)
Institute of Industrial Science and CINQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
41.
2007

Shibata Kenji; Buizert Christo; Oiwa Akira; Hirakawa Kazuhiko; Tarucha Seigo

Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes
Appl. Phys. Lett. 91, 112102 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
42.
2007

Igarashi Y.; Jung M.; Yamamoto M.; Oiwa A.; Machida T.; Hirakawa K.; Tarucha S.

Spin-half Kondo effect in a single self-assembled InAs quantum dot with and without an applied magnetic field
Phys. Rev. B 76, 081303 (2007)
Department of Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
43.
2007

Hirakawa K.; Unuma T.; Sekine N.

Dispersive Terahertz Bloch Gain in Semiconductor Superlattices
AIP Conf. Proc. 922, 191 (2007)
Institute of Industrial Science, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
44.
2007

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Hirakawa K.; Machida T.; Taniyama T.; Ishida S.; Arakawa Y.

Electric-field control of tunneling magnetoresistance effect in a Ni/;InAs/;Ni quantum-dot spin valve
Appl. Phys. Lett. 91, 022107 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
45.
2007

Park Kyung Hwa; Hirakawa Kazuhiko; Takagi Shinichi

Low‐temperature mobilities and energy loss rates of two‐dimensional electrons in Si inversion layers
AIP Conf. Proc. 893, 601 (2007)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
46.
2007

Unuma Takeya; Sekine Norihiko; Hirakawa Kazuhiko

Dephasing of Bloch Oscillations due to Interface Roughness Scattering in GaAs/AlAs Superlattices
AIP Conf. Proc. 893, 495 (2007)
Institute of Industrial Science, University of Tokyo, Meguro‐ku, Tokyo 153‐8505, Japan;
47.
2007

Unuma Takeya; Kobayashi Kensuke; Yamamoto Aishi; Yoshita Masahiro; Hirakawa Kazuhiko; Hashimoto Yoshiaki; Katsumoto Shingo; Iye Yasuhiro; Kanemitsu Yoshihiko; Akiyama Hidefumi

Single‐particle Nature of Intersubband Electronic Raman Scattering and Dynamical Many‐body Effects in Narrow GaAs Quantum Wells
AIP Conf. Proc. 893, 475 (2007)
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277‐8581, Japan;
48.
2007

Umeno Akinori; Akasaka Tetsuo; Hong Su Heon; Hirakawa Kazuhiko

Atomistic Picture of Electromigration Process and its Application to High‐yield Fabrication of Nanogap Electrodes
AIP Conf. Proc. 893, 373 (2007)
Institute of Industrial Science, University of Tokyo, Ee202 4‐6‐1 Komaba Meguro Tokyo Japan 153‐8505;
49.
2007

Akasaka Tetsuo; Umeno Akinori; Hong Su Heon; Hirakawa Kazuhiko; Araki Koji

Novel Gold Nanoparticles/Conjugated Molecules Network Structures Fabricated By Self‐assembling Process
AIP Conf. Proc. 893, 361 (2007)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, JAPAN;
50.
2007

An Zhenghua; Ueda T.; Komiyama S.; Hirakawa K.

Metastable excited states of a closed quantum dot with high sensitivity to infrared photons
Phys. Rev. B 75, 085417 (2007)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
51.
2007

Hamaya K.; Masubuchi S.; Kawamura M.; Machida T.; Jung M.; Shibata K.; Hirakawa K.; Taniyama T.; Ishida S.; Arakawa Y.

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
Appl. Phys. Lett. 90, 053108 (2007)
Department of Fundamental Engineering, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
52.
2006

Unuma Takeya; Kobayashi Kensuke; Yamamoto Aishi; Yoshita Masahiro; Hirakawa Kazuhiko; Hashimoto Yoshiaki; Katsumoto Shingo; Iye Yasuhiro; Kanemitsu Yoshihiko; Akiyama Hidefumi

Collective and single-particle intersubband excitations in narrow quantum wells selected by infrared absorption and resonant Raman scattering
Phys. Rev. B 74, 195306 (2006)
Institute for Solid State Physics, University of Tokyo, and CREST, JST, Kashiwa, Chiba 277-8581, Japan
53.
2006

Unuma T.; Sekine N.; Hirakawa K.

Dephasing of Bloch oscillating electrons in GaAs-based superlattices due to interface roughness scattering
Appl. Phys. Lett. 89, 161913 (2006)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
54.
2006

Tarakanov Yu. A.; Odnoblyudov M. A.; Chao K. A.; Sekine N.; Hirakawa K.

Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime
Phys. Rev. B 74, 125321 (2006)
A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia
55.
2006

An Zhenghua; Ueda T.; Chen Jeng-Chung; Komiyama S.; Hirakawa K.

A sensitive double quantum well infrared phototransistor
J. Appl. Phys. 100, 044509 (2006)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
56.
2006

Chen J. C.; An Zhenghua; Ueda T.; Komiyama S.; Hirakawa K.; Antonov V.

Metastable excited states of a closed quantum dot probed by an aluminum single-electron transistor
Phys. Rev. B 74, 045321 (2006)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
57.
2006

Ikushima Kenji; Yoshimura Yasuhiro; Hasegawa Takuma; Komiyama Susumu; Ueda Takeji; Hirakawa Kazuhiko

Photon-counting microscopy of terahertz radiation
Appl. Phys. Lett. 88, 152110 (2006)
Department of Basic Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8902, Japan
58.
2006

Hamaya K.; Shiraki Y.; Sawano K.; Arakawa Y.; Ishida S.; Hirakawa K.; Masubuchi S.; Machida T.

Spin-dependent edge-channel transport in a Si/;SiGe quantum Hall system
Phys. Rev. B 73, 121304 (2006)
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
59.
2006

Komiyama S.; Sakuma H.; Ikushima K.; Hirakawa K.

Electron temperature of hot spots in quantum Hall conductors
Phys. Rev. B 73, 045333 (2006)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
60.
2005

Jung M.; Machida T.; Hirakawa K.; Komiyama S.; Nakaoka T.; Ishida S.; Arakawa Y.

Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures
Appl. Phys. Lett. 87, 203109 (2005)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
61.
2005

Tarakanov Yu. A.; Vettchinkina V.; Odnoblyudov M. A.; Chao K. A.; Sekine N.; Hirakawa K.

Scattering-assisted electric current in semiconductor superlattices in the Wannier-Stark regime
Phys. Rev. B 72, 125345 (2005)
A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia
62.
2005

Jung M.; Hirakawa K.; Ishida S.; Arakawa Y.; Kawaguchi Y.; Komiyama S.

Shell Structures in Self‐Assembled InAs Quantum Dots Observed by Lateral Single Electron Tunneling Structures
AIP Conf. Proc. 772, 635 (2005)
IIS, University of Tokyo,4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
63.
2005

Ikushima K.; Sakuma H.; Komiyama S.; Hirakawa K.

Imaging non‐equilibrium edge states in quantum Hall conductors
AIP Conf. Proc. 772, 569 (2005)
Department of Basic Science, University of Tokyo, Komaba, Meguro‐ku, Tokyo 153‐8902, Japan;
64.
2005

Sekine Norihiko; Hirakawa Kaz

Acceleration Dynamics of Bloch Oscillating Electrons in Semiconductor Superlattices Investigated by Terahertz Electro‐optic Sampling Method
AIP Conf. Proc. 772, 1224 (2005)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
65.
2005

Umeno Akinori; Hirakawa Kazuhiko

Fabrication Of Atomic‐scale Gold Junctions By Electrochemical Plating Technique Using A Common Medical Disinfectant
AIP Conf. Proc. 772, 1071 (2005)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
66.
2005

An Zhenghua; Chen Jeng-Chung; Ueda T.; Komiyama S.; Hirakawa K.

Infrared phototransistor using capacitively coupled two-dimensional electron gas layers
Appl. Phys. Lett. 86, 172106 (2005)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan
67.
2005

Umeno A.; Hirakawa K.

Fabrication of atomic-scale gold junctions by electrochemical plating using a common medical liquid
Appl. Phys. Lett. 86, 143103 (2005)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
68.
2005

Sekine N.; Hirakawa K.

Dispersive Terahertz Gain of a Nonclassical Oscillator: Bloch Oscillation in Semiconductor Superlattices
Phys. Rev. Lett. 94, 057408 (2005)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
69.
2005

Jung M.; Hirakawa K.; Kawaguchi Y.; Komiyama S.; Ishida S.; Arakawa Y.

Lateral electron transport through single self-assembled InAs quantum dots
Appl. Phys. Lett. 86, 033106 (2005)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
70.
2004

Ikushima K.; Sakuma H.; Komiyama S.; Hirakawa K.

Imaging of Cyclotron Emission from Edge Channels in Quantum Hall Conductors
Phys. Rev. Lett. 93, 146804 (2004)
Department of Basic Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8902, Japan
71.
2004

Shimada Y.; Sekine N.; Hirakawa K.

Terahertz emission due to interminiband resonant Zener tunneling in wide-miniband GaAs/Al0.3Ga0.7As superlattices
Appl. Phys. Lett. 84, 4926 (2004)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
72.
2003

Sekine N.; Shimada Y.; Hirakawa K.

Dephasing mechanisms of Bloch oscillations in GaAs/Al0.3Ga0.7As superlattices investigated by time-resolved terahertz spectroscopy
Appl. Phys. Lett. 83, 4794 (2003)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
73.
2003

Jin Kuijuan; Odnoblyudov M.; Shimada Y.; Hirakawa K.; Chao K. A.

Terahertz frequency radiation from Bloch oscillations in GaAs/Al0.3Ga0.7As superlattices
Phys. Rev. B 68, 153315 (2003)
Division of Solid State Theory, Department of Physics, Lund University, S-223 62 Lund, Sweden and Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China;
74.
2003

Shimada Y.; Hirakawa K.; Odnoblioudov M.; Chao K. A.

Terahertz Conductivity and Possible Bloch Gain in Semiconductor Superlattices
Phys. Rev. Lett. 90, 046806 (2003)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
75.
2002

Shimada Y.; Hirakawa K.; Lee S.-W.

Time-resolved terahertz emission spectroscopy of wide miniband GaAs/AlGaAs superlattices
Appl. Phys. Lett. 81, 1642 (2002)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
76.
2002

Abe M.; Madhavi S.; Shimada Y.; Otsuka Y.; Hirakawa K.; Tomizawa K.

Transient carrier velocities in bulk GaAs: Quantitative comparison between terahertz data and ensemble Monte Carlo calculations
Appl. Phys. Lett. 81, 679 (2002)
Institute of Industrial of Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
77.
2002

Astafiev O.; Komiyama S.; Kutsuwa T.; Antonov V.; Kawaguchi Y.; Hirakawa K.

Single-photon detector in the microwave range
Appl. Phys. Lett. 80, 4250 (2002)
Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan;
78.
2002

Hirakawa K.; Katsumoto S.; Hayashi T.; Hashimoto Y.; Iye Y.

Double-exchange-like interaction in Ga1-x;MnxAs investigated by infrared absorption spectroscopy
Phys. Rev. B 65, 193312 (2002)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
79.
2002

Madhavi S.; Abe M.; Shimada Y.; Hirakawa K.

Nonequilibrium electron transport in wide miniband GaAs/AlxGa1-x;As superlattices at room temperature
Phys. Rev. B 65, 193308 (2002)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
80.
2002

Kawaguchi Y.; Hirakawa K.; Komiyama S.

High-sensitivity quantum Hall far-infrared photodetector integrated with log-periodic antenna
Appl. Phys. Lett. 80, 3418 (2002)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
81.
2002

Kawaguchi Y.; Hirakawa K.; Saeki M.; Yamanaka K.; Komiyama S.

Performance of high-sensitivity quantum Hall far infrared photodetectors
Appl. Phys. Lett. 80, 136 (2002)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
82.
2001

Sekine N.; Hirakawa K.; Voßebürger M.; Haring Bolivar P.; Kurz H.

Crossover from coherent to incoherent excitation of two-dimensional plasmons in GaAs/AlxGa1-x;As single quantum wells by femtosecond laser pulses
Phys. Rev. B 64, 201323 (2001)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
83.
2001

Shimada Yozo; Matsuno Tetsuya; Hirakawa Kazuhiko

Terahertz Emission due to Miniband Transport in GaAs/AlGaAs Superlattices
Jpn. J. Appl. Phys., Part 1 40, 3009 (2001)
Institute of Industrial Sciences, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
84.
2001

Hirakawa K.; Kawaguchi Y.; Yamanaka K.; Endo M.; Saeki M.; Komiyama S.

Far-infrared photoresponse of the magnetoresistance of the two-dimensional electron systems in the integer quantized Hall regime
Phys. Rev. B 63, 085320 (2001)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
85.
1999

Lee S.-W.; Hirakawa K.; Shimada Y.

Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
Appl. Phys. Lett. 75, 1428 (1999)
Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106-8558, Japan;
86.
1999

Sekine N.; Yamanaka K.; Hirakawa K.; Voßebürger M.; Haring-Bolivar P.; Kurz H.

Observation of terahertz radiation from higher-order two-dimensional plasmon modes in GaAs/AlGaAs single quantum wells
Appl. Phys. Lett. 74, 1006 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
87.
1998

Hogg R. A.; Suzuki K.; Tachibana K.; Finger L.; Hirakawa K.; Arakawa Y.

Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
Appl. Phys. Lett. 72, 2856 (1998)
University of Tokyo, Institute for Industrial Science, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
88.
1998

Sekine Norihiko; Hirakawa Kazuhiko; Arakawa Yasuhiko

Terahertz emission from quantum beats in coupled quantum wells
Jpn. J. Appl. Phys., Part 1 37, 1643 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
89.
1998

Shimada Yozo; Hirakawa Kazuhiko

Optical and transport properties of single quantum well infrared photodetectors
Jpn. J. Appl. Phys., Part 1 37, 1421 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
90.
1997

Shimada Yozo; Hirakawa Kazuhiko

Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes
Jpn. J. Appl. Phys., Part 1 36, 1944 (1997)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
91.
1997

Shimada Yozo; Hirakawa Kazuhiko

High-field Domain Formation Conditions in Semiconductor Multiple Quantum Well Sequential Resonant Tunneling Structures
Jpn. J. Appl. Phys., Part 1 36, 1012 (1997)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
92.
1996

Sekine N.; Hirakawa K.; Sogawa F.; Arakawa Y.; Usami N.; Shiraki Y.; Katoda T.

Ultrashort lifetime photocarriers in Ge thin films
Appl. Phys. Lett. 68, 3419 (1996)
Institute of Industrial Science, University of Tokyo, 7‐22‐11 Roppongi, Minato‐ku, Tokyo 106, Japan;
93.
1996

Voβebürger M.; Roskos H. G.; Wolter F.; Waschke C.; Kurz H.; Hirakawa K.; Wilke I.; Yamanaka K.

Radiative decay of optically excited coherent plasmons in a two‐dimensional electron gas
J. Opt. Soc. Am. B 13, 1045 (1996)
Institut für Halbleitertechnik II, Rheinisch‐Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, D‐52056 Aachen, Germany;
94.
1995

Hirakawa K.; Yamanaka K.; Grayson M.; Tsui D. C.

Far‐infrared emission spectroscopy of hot two‐dimensional plasmons in Al;0.3Ga0.7As/GaAs heterojunctions
Appl. Phys. Lett. 67, 2326 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
95.
1995

Grayson M.; Tsui D. C.; Shayegan M.; Hirakawa K.; Ghanbari R. A.; Smith Henry I.

Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs
Appl. Phys. Lett. 67, 1564 (1995)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
96.
1995

Sakamoto N.; Hirakawa K.; Ikoma T.

Conduction‐type conversion in Si‐doped (311)A GaAs grown by molecular beam epitaxy
Appl. Phys. Lett. 67, 1444 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
97.
1994

Hata K.; Ikoma T.; Hirakawa K.; Okano T.; Kawazu A.; Ueda T.; Akiyama M.

Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001)
J. Appl. Phys. 76, 5601 (1994)
Institute of Industrial Science, The University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
98.
1994

Agawa K.; Hirakawa K.; Sakamoto N.; Hashimoto Y.; Ikoma T.

Electrical properties of heavily Si‐doped (311);A GaAs grown by molecular beam epitaxy
Appl. Phys. Lett. 65, 1171 (1994)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
99.
1994

Heremans J. J.; Santos M. B.; Hirakawa K.; Shayegan M.

Mobility anisotropy of two‐dimensional hole systems in (311)A GaAs/Al;xGa1-;xAs heterojunctions
J. Appl. Phys. 76, 1980 (1994)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
100.
1993

Hirakawa K.; Grayson M.; Tsui D. C.; Kurdak Ç.

Blackbody radiation from hot two‐dimensional electrons in Al;xGa1-;xAs/GaAs heterojunctions
Phys. Rev. B 47, 16651 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
101.
1993

Lay T. S.; Heremans J. J.; Suen Y. W.; Santos M. B.; Hirakawa K.; Shayegan M.; Zrenner A.

High‐quality two‐dimensional electron system confined in an AlAs quantum well
Appl. Phys. Lett. 62, 3120 (1993)
Department Electrical Engineering, Princeton University, Princeton, New Jersey 08544
102.
1993

Hirakawa K.; Zhao Y.; Santos M. B.; Shayegan M.; Tsui D. C.

Anomalous cyclotron‐resonance line splitting of two‐dimensional holes in (311);A AlxGa1-;xAs/GaAs heterojunctions
Phys. Rev. B 47, 4076 (1993)
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
103.
1992

Lin S. Y.; Zaslavsky A.; Hirakawa K.; Tsui D. C.; Klem J. F.

Erratum: ‘‘Subband dispersion of holes in AlAs/In;0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling’’ [Appl. Phys. Lett. ;60, 601 (1992)]
Appl. Phys. Lett. 60, 2812 (1992)
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
104.
1992

Lin S. Y.; Zaslavsky A.; Hirakawa K.; Tsui D. C.; Klem J. F.

Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling
Appl. Phys. Lett. 60, 601 (1992)
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
105.
1991

Hirakawa K.; Hashimoto Y.; Harada K.; Ikoma T.

Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x‐ray photoemission spectroscopy
Phys. Rev. B 44, 1734 (1991)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
106.
1991

Noguchi M.; Hirakawa K.; Ikoma T.

Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
Phys. Rev. Lett. 66, 2243 (1991)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
107.
1991

Hirakawa Kazuhiko; Hashimoto Y.; Ikoma Toshiaki

Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy
Proc. SPIE Int. Soc. Opt. Eng. 1361, 255 (1991)
Univ. of Tokyo (Japan)
108.
1990

Hirakawa K.; Hashimoto Y.; Ikoma T.

Orientation independence of heterojunction‐band offsets at GaAs‐AlAs heterointerfaces characterized by x‐ray photoemission spectroscopy
Appl. Phys. Lett. 57, 2555 (1990)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
109.
1989

Hirakawa Kazuhiko

Tunneling spectroscopy of GaAs/AlxGa1-;xAs/GaAs single‐barrier heterojunction diodes
Phys. Rev. B 40, 3451 (1989)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
110.
1989

Hiramoto Toshiro; Hirakawa Kazuhiko; Iye Yasuhiro; Ikoma Toshiaki

Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation
Appl. Phys. Lett. 54, 2103 (1989)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
111.
1989

Zhao Xinwei; Hirakawa Kazuhiko; Ikoma Toshiaki

Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors
Appl. Phys. Lett. 54, 712 (1989)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
112.
1988

Morra Rose M.; Buyers William J. L.; Armstrong Robin L.; Hirakawa K.

Spin dynamics and the Haldane gap in the spin‐1 quasi‐one‐dimensional antiferromagnet CsNiCl;3
Phys. Rev. B 38, 543 (1988)
Atomic Energy of Canada Limited, Chalk River, Ontario, Canada K0J∥1J0;
113.
1988

Hiramoto Toshiro; Hirakawa Kazuhiko; Ikoma Toshiaki

Fabrication of one‐dimensional GaAs wires by focused ion beam implantation
J. Vac. Sci. Technol. B 6, 1014 (1988)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
114.
1988

Hirakawa Kazuhiko; Sakaki Hiroyuki

Hot‐electron transport in selectively doped ;n‐type AlGaAs/GaAs heterojunctions
J. Appl. Phys. 63, 803 (1988)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
115.
1987

Sakaki H.; Noda T.; Hirakawa K.; Tanaka M.; Matsusue T.

Interface roughness scattering in GaAs/AlAs quantum wells
Appl. Phys. Lett. 51, 1934 (1987)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
116.
1987

Hiramoto Toshiro; Hirakawa Kazuhiko; Iye Yasuhiro; Ikoma Toshiaki

One‐dimensional GaAs wires fabricated by focused ion beam implantation
Appl. Phys. Lett. 51, 1620 (1987)
Institute of Industrial Science, University of Tokyo, 7‐22‐1, Roppongi, Minato‐ku, Tokyo 106, Japan;
117.
1986

Hirakawa K.; Sakaki H.

Energy relaxation of two‐dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions
Appl. Phys. Lett. 49, 889 (1986)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
118.
1986

Hirakawa Kazuhiko; Sakaki Hiroyuki

Mobility of the two‐dimensional electron gas at selectively doped ;n ;‐type Al;xGa1-;xAs/GaAs heterojunctions with controlled electron concentrations
Phys. Rev. B 33, 8291 (1986)
Institute of Industrial Science, The University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
119.
1985

Hirakawa K.; Sakaki H.; Yoshino J.

Mobility modulation of the two‐dimensional electron gas via controlled deformation of the electron wave function in selectively doped AlGaAs‐GaAs heterojunctions
Phys. Rev. Lett. 54, 1279 (1985)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
120.
1985

Hirakawa K.; Sakaki H.; Yoshino J.

Summary Abstract: Electron concentration in N‐AlGaAs/GaAs heterojunction field‐effect transistors and its dependence on spacer layer thickness
J. Vac. Sci. Technol. B 3, 798 (1985)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
121.
1984

Hirakawa K.; Sakaki H.; Yoshino J.

Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer‐layer thickness and gate electric field
Appl. Phys. Lett. 45, 253 (1984)
Institute of Industrial Science, the University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
122.
1983

Yoshizawa H.; Shirane G.; Shiba H.; Hirakawa K.

Neutron scattering study of a one‐dimensional ;XY antiferromagnet Cs2CoCl4
Phys. Rev. B 28, 3904 (1983)
Brookhaven National Laboratory, Upton, New York 11973
123.
1982

Hirakawa K.

Kosterlitz‐Thouless transition in two‐dimensional planar ferromagnet K;2CuF4 (invited)
J. Appl. Phys. 53, 1893 (1982)
Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato‐ku, Tokyo, Japan;
124.
1981

Yoshizawa H.; Hirakawa K.; Satija S. K.; Shirane G.

Dynamical correlation functions in a one‐dimensional Ising‐like antiferromagnetic CsCoCl;3; A neutron scattering study
Phys. Rev. B 23, 2298 (1981)
The Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato‐ku Tokyo 106, Japan;
125.
1981

Satija S. K.; Shirane G.; Yoshizawa H.; Hirakawa K.

Abstract: Neutron study of dynamical correlation functions in a 1D Ising‐like antiferromagnetic CsCoCl;3
J. Appl. Phys. 52, 1983 (1981)
Brookhaven National Laboratory, Upton, New York 11973
126.
1980

Satija S. K.; Shirane G.; Yoshizawa Y.; Hirakawa K.

Neutron scattering study of spin dynamics in CsCoCl3
Phys. Rev. Lett. 44, 1548 (1980)
Brookhaven National Laboratory, Upton, New York 11973
127.
1980

Satija S. K.; Axe J. D.; Shirane G.; Yoshizawa H.; Hirakawa K.

Neutron scattering study of spin waves in one‐dimensional antiferromagnet KCuF;3
Phys. Rev. B 21, 2001 (1980)
Brookhaven National Laboratory, Upton, New York 11973

Co-authors

Co-publications
18

Komiyama, Susumu
18

Shibata, Kenji
14

Sekine, Norihiko
13

Unuma, Takeya
13

Arakawa, Yasuhiko
10

Ishida, Satomi
10

Jung, M
10

Machida, Tomoki
8

Shimada, Y
8

Oiwa, Akira
8

Tarucha, Seigo
7

Umeno, Akinori
7

Ueda, Takeji
7

Sakaki, Hiroyuki
7

Hamaya, K