Computed
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Photoelectric conversion: sol...
Semiconductor compounds
III-V semiconductors
Diffusion; interface formation
Metal-nonmetal contacts
Photoconduction and photovolt...
Surface treatments
Structure of clean surfaces
Chemical vapor deposition
Charge carriers: generation, ...
Surface double layers, Schott...
Defects and impurities: dopin...
Optical properties of bulk ma...
Surface states, band structur...
Molecular, atomic, ion, and c...
1.
Geisz John F.; Scott Ward J.; Duda Anna; Olavarria Waldo; Gedvilas Lynn; Young Michelle; Wanlass Mark W.; Carapella Jeff; Kurtz Sarah R.; Friedman Daniel J.; Romero Manuel J.; Steiner Myles A.
Infrared Reflective and Transparent Inverted Metamorphic Triple Junction Solar Cells
2.
Zhang Yong; Jiang C.-S.; Friedman D. J.; Geisz J. F.; Mascarenhas A.
Tailoring the electronic properties of GaxIn1-x;P beyond simply varying alloy composition
3.
Geisz J. F.; Friedman D. J.; Ward J. S.; Duda A.; Olavarria W. J.; Moriarty T. E.; Kiehl J. T.; Romero M. J.; Norman A. G.; Jones K. M.
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
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4.
Geisz J. F.; Duda A.; Kurtz Sarah; Wanlass M. W.; Ward J. S.; Friedman D. J.; Olson J. M.; McMahon W. E.; Moriarty T. E.; Kiehl J. T.
High-efficiency GaInP/;GaAs/;InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
5.
Jackrel David B.; Bank Seth R.; Yuen Homan B.; Wistey Mark A.; Harris James S.; Ptak Aaron J.; Johnston Steven W.; Friedman Daniel J.; Kurtz Sarah R.
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
6.
Ptak A. J.; Friedman D. J.; Kurtz Sarah
Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs
7.
Ptak A. J.; Friedman D. J.; Kurtz Sarah; Reedy R. C.; Young M.; Jackrel D. B.; Yuen H. B.; Bank S. R.; Wistey M. A.; Harris J. S.
Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy
8.
Ptak A. J.; Kurtz Sarah; Friedman D. J.; Reedy R. C.
Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications
9.
Johnston S. W.; Kurtz S. R.; Friedman D. J.; Ptak A. J.; Ahrenkiel R. K.; Crandall R. S.
Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement
10.
Metzger W. K.; Dashdorj J.; Ahrenkiel R. K.; Friedman D. J.
Analysis of charge separation dynamics in a semiconductor junction
11.
Grandt Patrick A.; Griffith Aureus E.; Manasreh M. O.; Friedman D. J.; Doğan S.; Johnstone D.
Determination of the carrier concentration in InGaAsN/;GaAs single quantum wells using Raman scattering
12.
Kurtz Sarah; Geisz J. F.; Friedman D. J.; Metzger W. K.; King R. R.; Karam N. H.
Annealing-induced-type conversion of GaInNAs
13.
Jiang C.-S.; Friedman D. J.; Geisz J. F.; Moutinho H. R.; Romero M. J.; Al-Jassim M. M.
Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells
14.
Friedman D. J.; Geisz J. F.; Metzger W. K.; Johnston S. W.
Trap-dominated minority-carrier recombination in GaInNAs pn; junctions
15.
Jiang Chun-Sheng; Moutinho H. R.; Friedman D. J.; Geisz J. F.; Al-Jassim M. M.
Measurement of built-in electrical potential in III–V solar cells by scanning Kelvin probe microscopy
16.
Kurtz Sarah; Geisz J. F.; Keyes B. M.; Metzger W. K.; Friedman D. J.; Olson J. M.; Ptak A. J.; King R. R.; Karam N. H.
Effect of growth rate and gallium source on GaAsN
17.
Balcioglu A.; Ahrenkiel R. K.; Friedman D. J.
Effects of oxygen contamination on diffusion length in p+-n; GaInNAs solar cells
18.
Shan W.; Friedman D. J.; Geisz J. F.; Haller E. E.; Li S. X.; Ager J. W.; Yu K. M.; Wu J.; Walukiewicz W.; Kurtz Sarah R.
Band-gap bowing effects in BxGa1-x;As alloys
19.
Manasreh M. O.; Friedman D. J.; Ma W. Q.; Workman C. L.; George C. E.; Salamo G. J.
Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells
20.
Jiang Chun-Sheng; Moutinho H. R.; Geisz J. F.; Friedman D. J.; Al-Jassim M. M.
Direct measurement of electrical potentials in GaInP2 solar cells
21.
Perkins J. D.; Mascarenhas A.; Geisz J. F.; Friedman D. J.
Conduction-band-resonant nitrogen-induced levels in GaAs1-x;Nx with x<0.03;
22.
Kurtz Sarah; Webb J.; Gedvilas L.; Friedman D.; Geisz J.; Olson J.; King R.; Joslin D.; Karam N.
Structural changes during annealing of GaInAsN
23.
Ahrenkiel R. K.; Johnston S. W.; Keyes B. M.; Friedman D. J.; Vernon S. M.
Erratum: “Transport properties of ;GaAs1-x;Nx thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. ;77, 3794 (2000)]
24.
Transport properties of GaAs1-x;Nx thin films grown by metalorganic chemical vapor deposition
25.
Shan W.; Walukiewicz W.; Yu K. M.; Ager J. W.; Haller E. E.; Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz Sarah R.; Nauka C.
Effect of nitrogen on the electronic band structure of group III-N-V alloys
26.
Herndon M. K.; Bradford W. C.; Collins R. T.; Hawkins B. E.; Kuech T. F.; Friedman D. J.; Kurtz S. R.
Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells
27.
Yu K. M.; Walukiewicz W.; Shan W.; Ager J. W.; Wu J.; Haller E. E.; Geisz J. F.; Friedman D. J.; Olson J. M.
Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
28.
Evidence of an oxygen recombination center in p+–n; GaInNAs solar cells
29.
Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz Sarah R.; Reedy R. C.; Swartzlander A. B.; Keyes B. M.; Norman A. G.
BGaInAs alloys lattice matched to GaAs
30.
Shan W.; Olson J. M.; Friedman D. J.; Geisz J. F.; Haller E. E.; Ager J. W.; Walukiewicz W.; Kurtz Sarah R.
Effect of nitrogen on the band structure of GaInNAs alloys
31.
Perkins J. D.; Mascarenhas A.; Zhang Yong; Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz Sarah R.
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-x;Nx with x < 0.03 ;
32.
Keyes B. M.; Geisz J. F.; Dippo P. C.; Reedy R.; Kramer C.; Friedman D. J.; Kurtz Sarah R.; Olson J. M.
Optical investigation of GaNAs
33.
Abulfotuh F.; Balcioglu A.; Friedman D.; Geisz J.; Kurtz S.
Investigation of deep levels in GaInNAs
34.
Friedman D. J.; Kurtz Sarah R.; Kibbler A. E.
Exploration of GaInTlP and related Tl-containing III-V alloys for photovoltaics
35.
Kurtz Sarah R.; Friedman D. J.
Concentrator and space applications of high-efficiency solar cells—recent developments
36.
Geisz J. F.; Friedman D. J.; Olson J. M.; Kramer C.; Kibbler A.; Kurtz Sarah R.
New materials for future generations of III-V solar cells
37.
Shan W.; Walukiewicz W.; Ager J. W.; Haller E. E.; Geisz J. F.; Friedman D. J.; Olson J. M.; Kurtz S. R.
Band Anticrossing in GaInNAs Alloys
38.
Friedman D. J.; Kibbler A. E.; Reedy R.
Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga0.5In0.5P by molecular beam epitaxy
39.
Zhang Yong; Mascarenhas A.; Ernst P.; Driessen F. A. J. M.; Friedman D. J.; Bertness K. A.; Olson J. M.; Geng C.; Scholz F.; Schweizer H.
Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys
40.
Friedman D. J.; Kurtz Sarah R.; Kibbler A. E.; Al-Jassim M.; Jones K.; Keyes B.; Matson R.
Polycrystalline MBE-grown GaAs for solar cells
41.
Kurtz Sarah R.; Friedman Daniel
Recent developments in terrestrial concentrator photovoltaics
42.
Friedman D. J.; Bertness K. A.; Kurtz Sarah R.; Kramer C.; Kibbler A. E.; Olson J. M.
30.2%‐Efficient GaInP/GaAs concentrator solar cells
43.
Bertness K. A.; Kurtz Sarah R.; Friedman D. J.; Kibbler A. E.; Kramer C.; Olson J. M.
29.5%‐efficient GaInP/GaAs tandem solar cells
44.
Friedman D. J.; Horner G. S.; Kurtz Sarah R.; Bertness K. A.; Olson J. M.; Moreland J.
Effect of faceting on the band gap of ordered GaInP
45.
Friedman D. J.; Kurtz Sarah R.; Bertness K. A.; Kibbler A. E.; Kramer C.; Emery K.; Field H.; Olson J. M.
GaInP/GaAs tandem concentrator cells
46.
Bertness K. A.; Friedman D. J.; Kibbler A. E.; Kramer C.; Kurtz Sarah R.; Olson J. M.
High efficiency GaInP/GaAs tandem solar cells
47.
Friedman D. J.; Zhu Jane G.; Kibbler A. E.; Olson J. M.; Moreland J.
Surface topography and ordering‐variant segregation in GaInP;2
48.
Horner G. S.; Sinha K.; Mascarenhas A.; Alonso R. G.; Friedman D. J.; Bertness K. A.; Zhu J. G.; Olson J. M.
Polarized photoluminescence measurements of the valence‐band splitting in single‐variant, spontaneously ordered GaInP;2
49.
Yeh J.-J.; Cao R.; Friedman D. J.; Bertness K.; Hwang J.; Lindau I.
Growth of the room temperature Au/Si(111)‐7×7 interface
50.
Friedman D. J.; Kurtz S. R.; Kibbler A. E.; Olson J. M.
GaInP2/GaAs tandem cells: Problems and solutions
51.
Kurtz Sarah R.; Olson J. M.; Bertness K. A.; Friedman D. J.; Arent D. J.; Kibbler A. E.; Kramer C. M.
Overview of ordering and related anomalous properties of Ga0.5In0.5P
52.
Friedman D. J.; Kibbler A. E.; Olson J. M.
Cation site ordering and conduction electron scattering in GaInP2
53.
Carey G. P.; Wahi A. K.; Friedman D. J.; McCants C. E.; Spicer W. E.
Fermi‐level movement at metal/HgCdTe contacts formed at low temperature
54.
Bertness K. A.; Yeh J.-J.; Friedman D. J.; Mahowald P. H.; Wahi A. K.; Kendelewicz T.; Lindau I.; Spicer W. E.
Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces
55.
Spicer W. E.; Friedman D. J.; Carey G. P.
The electrical properties of metallic contacts on Hg1-;xCdxTe
56.
Carey G. P.; Friedman D. J.; Wahi A. K.; Shih C. K.; Spicer W. E.
Use of low temperature to reduce intermixing at metal:HgCdTe contacts
57.
Friedman D. J.; Lindau I.; Spicer W. E.
Noble‐metal;–;CdTe interface formation
58.
Carey G. P.; Friedman D. J.; Lindau I.; Spicer W. E.
Photoemission studies of the room‐temperature Si/Hg;1-;xCdxTe, Si/HgTe, and Si/CdTe interfaces
59.
Friedman D. J.; Carey G. P.; Lindau I.; Spicer W. E.
Systematics of metal contacts to Hg1-;xCdxTe
60.
Mahowald P. H.; Bertness K. A.; Carey G. P.; Friedman D. J.; Yeh J. J.
Computer program for photoemission data analysis and display
61.
Nogami J.; Friedman D. J.; Kendelewicz T.; Lindau I.; Spicer W. E.
Summary Abstract: Binding energy shifts from alloying at metal/II–VI compound semiconductor interfaces
62.
Overlayer‐cation reaction at the Pt/Hg;1-;xCdxTe interface
63.
Effect of different cation‐anion bond strengths on metal;–;ternary‐semiconductor interface formation; Cu/Hg;0.75Cd0.25Te and Cu/CdTe
64.
Friedman D. J.; Spicer W. E.; Lindau I.; Carey G. P.; Wilson J. A.
Role of Hg bonding in metal/Hg1-;xCdxTe interface formation
65.
Bertness K. A.; Friedman D. J.; Mahowald P. H.; Yeh J. J.; Wahi A. K.; Lindau I.; Spicer W. E.
Oxygen chemisorption on GaAs(110): Surface or subsurface growth?
66.
Shih C. K.; Friedman D. J.; Bertness K. A.; Lindau I.; Spicer W. E.; Wilson J. A.
Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1-;xCdxTe
67.
Friedman D. J.; Carey G. P.; Shih C. K.; Lindau I.; Spicer W. E.; Wilson J. A.
The Ag/(Hg,Cd)Te and Al/(Hg,Cd)Te interfaces
68.
Yeh Jyh-Jye; Friedman Daniel J.; Cao Renyu; Lindau Ingolf
Summary Abstract: Oxidation study of the Si(111) surface with an ordered Ag overlayer
69.
Nogami J.; Carbone C.; Friedman D. J.; Lindau I.
Electronic structure of the Yb/Ge(111) interface
70.
Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface
71.
Bertness K. A.; Petro W. G.; Silberman J. A.; Friedman D. J.; Spicer W. E.
Optically enhanced low temperature oxygen chemisorption on GaAs(110)
72.
Silberman J. A.; Laser D.; Shih C. K.; Friedman D. J.; Lindau I.; Spicer W. E.; Wilson J. A.
Angle‐resolved photoemission spectroscopy of Hg;1-;xCdxTe
23
Kurtz, Sarah R.
22
Geisz, John F.
21
Olson, Jerry M.
17
Spicer, William E.
8
Kurtz, Sarah
6
Keyes, Brian
Ptak, Aaron J.
Ahrenkiel, RK
5
Reedy, Robert C.
Johnston, Steven W.
Mascarenhas, Angelo
Walukiewicz, Wladek
Shan, W
Ager, Joel W.
Haller, Eugene E.