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III-V semiconductors
Semiconductor lasers; laser d...
Quantum dots
Electron states and collectiv...
Design of specific laser syst...
II-VI semiconductors
Spectroscopy of solid state d...
Excitons and related phenomena
Photonic bandgap materials
Resonators, cavities, amplifi...
Nanoelectronic devices
Quantum well devices
Microcavity and microdisk las...
Quantum wells
Surface cleaning, etching, pa...
1.
Lermer M.; Gregersen N.; Dunzer F.; Reitzenstein S.; Höfling S.; Mørk J.; Worschech L.; Kamp M.; Forchel A.
Bloch-Wave Engineering of Quantum Dot Micropillars for Cavity Quantum Electrodynamics Experiments
2.
Munsch M.; Claudon J.; Malik N. S.; Gilbert K.; Grosse P.; Gérard J.-M.; Albert F.; Langer F.; Schlereth T.; Pieczarka M. M.; Höfling S.; Kamp M.; Forchel A.; Reitzenstein S.
Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes
3.
Musiał A.; Kaczmarkiewicz P.; Sęk G.; Podemski P.; Machnikowski P.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.
Carrier trapping and luminescence polarization in quantum dashes
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4.
Ugur Asli; Kremling Stefan; Hatami Fariba; Höfling Sven; Worschech Lukas; Forchel Alfred; Ted Masselink W.
Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots
5.
Syperek M.; Musiał A.; Se☒k G.; Podemski P.; Misiewicz J.; Löffler A.; Höfling S.; Worschech L.; Forchel A.
Impact of the localized wetting layer states on carrier relaxation processes in GaAs‐based quantum dash structures
6.
Brichkin A. S.; Novikov S. I.; Larionov A. V.; Kulakovskii V. D.; Glazov M. M.; Schneider C.; Höfling S.; Kamp M.; Forchel A.
Effect of Coulomb interaction on exciton-polariton condensates in GaAs pillar microcavities
7.
Rahimi-Iman A.; Schneider C.; Fischer J.; Holzinger S.; Amthor M.; Höfling S.; Reitzenstein S.; Worschech L.; Kamp M.; Forchel A.
Zeeman splitting and diamagnetic shift of spatially confined quantum-well exciton polaritons in an external magnetic field
8.
Fuchs Peter; Semmel Julia; Friedl Jochen; Höfling Sven; Koeth Johannes; Worschech Lukas; Forchel Alfred
Erratum: “Distributed feedback quantum cascade lasers at 13.8 µm on indium phosphide” [Appl. Phys. Lett. 98, 211118 (2011)]
9.
Young A. B.; Oulton R.; Hu C. Y.; Thijssen A. C. T.; Schneider C.; Reitzenstein S.; Kamp M.; Höfling S.; Worschech L.; Forchel A.; Rarity J. G.
Quantum-dot-induced phase shift in a pillar microcavity
10.
Ulrich S. M.; Ates S.; Reitzenstein S.; Löffler A.; Forchel A.; Michler P.
Dephasing of Triplet-Sideband Optical Emission of a Resonantly Driven InAs/GaAs Quantum Dot inside a Microcavity
11.
Hartmann F.; Gammaitoni L.; Höfling S.; Forchel A.; Worschech L.
Light-induced stochastic resonance in a nanoscale resonant-tunneling diode
12.
Madsen K. H.; Ates S.; Lund-Hansen T.; Löffler A.; Reitzenstein S.; Forchel A.; Lodahl P.
Observation of Non-Markovian Dynamics of a Single Quantum Dot in a Micropillar Cavity
13.
Tempel Jean-Sebastian; Akimov Ilya A.; Aßmann Marc; Schneider Christian; Höfling Sven; Kistner Caroline; Reitzenstein Stephan; Worschech Lukas; Forchel Alfred; Bayer Manfred
Extrapolation of the intensity autocorrelation function of a quantum-dot micropillar laser into the thermal emission regime
14.
Distributed feedback quantum cascade lasers at 13.8 μm on indium phosphide
15.
Beetz J.; Kistner C.; Lermer M.; Schneider C.; Reitzenstein S.; Höfling S.; Kamp M.; Forchel A.
In-plane manipulation of quantum dots in high quality laterally contacted micropillar cavities
16.
Huggenberger A.; Heckelmann S.; Schneider C.; Höfling S.; Reitzenstein S.; Worschech L.; Kamp M.; Forchel A.
Narrow spectral linewidth from single site-controlled In(Ga)As quantum dots with high uniformity
17.
Hartmann F.; Forchel A.; Neri I.; Gammaitoni L.; Worschech L.
Nanowatt logic stochastic resonance in branched resonant tunneling diodes
18.
Larionov A. V.; Kulakovskii V. D.; Höfling S.; Schneider C.; Worschech L.; Forchel A.
Polarized Nonequilibrium Bose-Einstein Condensates of Spinor Exciton Polaritons in a Magnetic Field
19.
Stobbe S.; Schlereth T. W.; Höfling S.; Forchel A.; Hvam J. M.; Lodahl P.
Large quantum dots with small oscillator strength
20.
Reitzenstein S.; Böckler C.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Yao P.; Hughes S.
Polarization-dependent strong coupling in elliptical high-Q micropillar cavities
21.
Göpfert S.; Worschech L.; Lingemann S.; Schneider C.; Press D.; Höfling S.; Forchel A.
Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots
22.
Weiler S.; Ulhaq A.; Ulrich S. M.; Reitzenstein S.; Löffler A.; Forchel A.; Michler P.
Emission characteristics of a highly correlated system of a quantum dot coupled to two distinct micropillar cavity modes
23.
Margapoti E.; Alves Fabrizio M.; Mahapatra S.; Schmidt T.; Lopez-Richard V.; Destefani C.; Menéndez-Proupin E.; Qu Fanyao; Bougerol C.; Brunner K.; Forchel A.; Marques G. E.; Worschech L.
Characterization of spin-state tuning in thermally annealed semiconductor quantum dots
24.
Bauer Adam; Dallner Matthias; Kamp Martin; Höfling Sven; Worschech Lukas; Forchel Alfred
Shortened injector interband cascade lasers for 3.3- to 3.6-μm emission
25.
Fuchs Peter; Seufert Jochen; Koeth Johannes; Semmel Julia; Höfling Sven; Worschech Lukas; Forchel Alfred
Widely tunable quantum cascade lasers with coupled cavities for gas detection
26.
Kudrawiec R.; Sęk G.; Motyka M.; Misiewicz J.; Somers A.; Höfling S.; Worschech L.; Forchel A.
Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes
27.
Reitzenstein S.; Münch S.; Franeck P.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Ponomarev I. V.; Reinecke T. L.
Exciton spin state mediated photon-photon coupling in a strongly coupled quantum dot microcavity system
28.
Albert F.; Braun T.; Heindel T.; Schneider C.; Reitzenstein S.; Höfling S.; Worschech L.; Forchel A.
Whispering gallery mode lasing in electrically driven quantum dot micropillars
29.
Ladd Thaddeus D.; Press David; De Greve Kristiaan; McMahon Peter L.; Friess Benedikt; Schneider Christian; Kamp Martin; Höfling Sven; Forchel Alfred; Yamamoto Yoshihisa
Pulsed Nuclear Pumping and Spin Diffusion in a Single Charged Quantum Dot
30.
Ulhaq A.; Ates S.; Weiler S.; Ulrich S. M.; Reitzenstein S.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Michler P.
Linewidth broadening and emission saturation of a resonantly excited quantum dot monitored via an off-resonant cavity mode
31.
Kistner C.; Morgener K.; Reitzenstein S.; Schneider C.; Höfling S.; Worschech L.; Forchel A.; Yao P.; Hughes S.
Strong coupling in a quantum dot micropillar system under electrical current injection
32.
Heinrich J.; Huggenberger A.; Heindel T.; Reitzenstein S.; Höfling S.; Worschech L.; Forchel A.
Single photon emission from positioned GaAs/AlGaAs photonic nanowires
33.
Sęk G.; Musiał A.; Podemski P.; Syperek M.; Misiewicz J.; Löffler A.; Höfling S.; Worschech L.; Forchel A.
Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes
34.
Hartmann F.; Hartmann D.; Kowalzik P.; Forchel A.; Gammaitoni L.; Worschech L.
Stochastic resonance in a nanoscale Y-branch switch
35.
Reitzenstein S.; Worschech L.; Hartmann D.; Forchel A.
Intrinsic feedback and bistable switching in Y-branched nanojunctions
36.
Aßmann Marc; Veit Franziska; Bayer Manfred; Gies Christopher; Jahnke Frank; Reitzenstein Stephan; Höfling Sven; Worschech Lukas; Forchel Alfred
Ultrafast tracking of second-order photon correlations in the emission of quantum-dot microresonator lasers
37.
Albert F.; Stobbe S.; Schneider C.; Heindel T.; Reitzenstein S.; Höfling S.; Lodahl P.; Worschech L.; Forchel A.
Quantum efficiency and oscillator strength of site-controlled InAs quantum dots
38.
Roumpos Georgios; Nitsche Wolfgang H.; Höfling Sven; Forchel Alfred; Yamamoto Yoshihisa
Gain-Induced Trapping of Microcavity Exciton Polariton Condensates
39.
Hartmann F.; Hartmann D.; Kowalzik P.; Gammaitoni L.; Forchel A.; Worschech L.
Magnetic-field-controlled noise-activated switching in a nonlinear three-terminal nanojunction
40.
Jaffrennou P.; Claudon J.; Bazin M.; Malik N. S.; Reitzenstein S.; Worschech L.; Kamp M.; Forchel A.; Gérard J.-M.
Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities
41.
Syperek M.; Kudrawiec R.; Baranowski M.; Sȩk G.; Misiewicz J.; Bisping D.; Marquardt B.; Forchel A.; Fischer M.
Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well
42.
Yao Peijun; Pathak P. K.; Illes E.; Hughes S.; Münch S.; Reitzenstein S.; Franeck P.; Löffler A.; Heindel T.; Höfling S.; Worschech L.; Forchel A.
Nonlinear photoluminescence spectra from a quantum-dot–cavity system: Interplay of pump-induced stimulated emission and anharmonic cavity QED
43.
Horikiri Tomoyuki; Schwendimann Paolo; Quattropani Antonio; Höfling Sven; Forchel Alfred; Yamamoto Yoshihisa
Higher order coherence of exciton-polariton condensates
44.
Heindel T.; Schneider C.; Lermer M.; Kwon S. H.; Braun T.; Reitzenstein S.; Höfling S.; Kamp M.; Forchel A.
Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency
45.
Bauer A.; Langer F.; Dallner M.; Kamp M.; Motyka M.; Sęk G.; Ryczko K.; Misiewicz J.; Höfling S.; Forchel A.
Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range
46.
Spanheimer D.; Müller C. R.; Heinrich J.; Höfling S.; Worschech L.; Forchel A.
Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature
47.
Müller C. R.; Stopa M.; Lang S.; Worschech L.; Forchel A.
Quantized rectification in a quantum dot nanojunction
48.
Brandenstein-Köth Bettina; Worschech Lukas; Forchel Alfred
Magnetic-field asymmetry of nonlinear transport in narrow channels with asymmetric hybrid confinement
49.
Münch S.; Reitzenstein S.; Franeck P.; Löffler A.; Heindel T.; Höfling S.; Worschech L.; Forchel A.
The role of optical excitation power on the emission spectra of a strongly coupled quantum dot-micropillar system
50.
S\{e}k Grzegorz; Podemski Pawe$ŀ$; Andrzejewski Janusz; Misiewicz Jan; Hein Sebastian; Höfling Sven; Forchel Alfred
Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 μm
51.
Motyka M.; Sęk G.; Ryczko K.; Misiewicz J.; Lehnhardt T.; Höfling S.; Forchel A.
Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications
52.
Quast J.-H.; Astakhov G. V.; Ossau W.; Molenkamp L. W.; Heinrich J.; Höfling S.; Forchel A.
Influence of light on spin diffusion in weak magnetic fields
53.
Hein S.; Podemski P.; Sęk G.; Misiewicz J.; Ridha P.; Fiore A.; Patriarche G.; Höfling S.; Forchel A.
Orientation dependent emission properties of columnar quantum dash laser structures
54.
Kistner C.; Reitzenstein S.; Schneider C.; Höfling S.; Forchel A.
Resonantly probing micropillar cavity modes by photocurrent spectroscopy
55.
Müller C. R.; Worschech L.; Forchel A.
Inversion of hysteresis in quantum dot controlled quantum-wire transistor
56.
Sęk G.; Podemski P.; Musiał A.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.
Exciton and biexciton emission from a single InAs/InP quantum dash
57.
Schneider C.; Heindel T.; Huggenberger A.; Weinmann P.; Kistner C.; Kamp M.; Reitzenstein S.; Höfling S.; Forchel A.
Single photon emission from a site-controlled quantum dot-micropillar cavity system
58.
Sęk G.; Podemski P.; Misiewicz J.; Reitzenstein S.; Reithmaier J. P.; Forchel A.
Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots
59.
Reitzenstein S.; Gregersen N.; Kistner C.; Strauss M.; Schneider C.; Pan L.; Nielsen T. R.; Höfling S.; Mørk J.; Forchel A.
Oscillatory variations in the Q factors of high quality micropillar cavities
60.
LeClech Julien; Ziegler Mathias; Mukherjee Jayanta; Tomm Jens W.; Elsaesser Thomas; Landesman Jean-Pierre; Corbett Brian; Mclnerney John G.; Reithmaier Johann Peter; Deubert Stefan; Forchel Alfred; Nakwaski Włodzimierz; Sarzała Robert P.
Microthermography of diode lasers: The impact of light propagation on image formation
61.
Semmel Julia; Kaiser Wolfgang; Hofmann Holger; Höfling Sven; Forchel Alfred
Single mode emitting ridge waveguide quantum cascade lasers coupled to an active ring resonator filter
62.
Worschech L.; Hartmann D.; Forchel A.
Dynamic-gate operation in nanoelectronic amplifiers due to reduced screening
63.
Capua A.; O'duill S.; Mikhelashvili V.; Eisenstein G.; Reithmaier J. P.; Somers A.; Forchel A.
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier
64.
Podemski P.; Sęk G.; Ryczko K.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.; Patriarche G.
Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 μ;m
65.
Ates S.; Gies C.; Ulrich S. M.; Wiersig J.; Reitzenstein S.; Löffler A.; Forchel A.; Jahnke F.; Michler P.
Influence of the spontaneous optical emission factor β; on the first-order coherence of a semiconductor microcavity laser
66.
Renner Johannes; Worschech Lukas; Forchel Alfred; Mahapatra Suddhasatta; Brunner Karl
Glass supported ZnSe microring strongly coupled to a single CdSe quantum dot
67.
Hartmann D.; Worschech L.; Forchel A.
Tunable magnetic-field asymmetry of nonlinear mesoscopic transport: Field-effect controlled backscattering in a quantum wire
68.
Kistner C.; Heindel T.; Schneider C.; Rahimi-Iman A.; Reitzenstein S.; Höfling S.; Forchel A.
Demonstration of strong coupling via electro-optical tuning in high-quality QD-micropillar systems
69.
Lund-Hansen T.; Stobbe S.; Julsgaard B.; Thyrrestrup H.; Sünner T.; Kamp M.; Forchel A.; Lodahl P.
Experimental Realization of Highly Efficient Broadband Coupling of Single Quantum Dots to a Photonic Crystal Waveguide
70.
Julsgaard B.; Johansen J.; Stobbe S.; Stolberg-Rohr T.; Sünner T.; Kamp M.; Forchel A.; Lodahl P.
Decay dynamics of quantum dots influenced by the local density of optical states of two-dimensional photonic crystal membranes
71.
Müller M.; Lehnhardt T.; Rößner K.; Forchel A.
Tunable lasers on GaSb using the concept of binary superimposed gratings
72.
Müller C. R.; Worschech L.; Heinrich J.; Höfling S.; Forchel A.
Room temperature memory operation of a single InAs quantum dot layer in a GaAs/;AlGaAs heterostructure
73.
Reitzenstein S.; Heindel T.; Kistner C.; Rahimi-Iman A.; Schneider C.; Höfling S.; Forchel A.
Low threshold electrically pumped quantum dot-micropillar lasers
74.
Kwon Soon-Hong; Sünner Thomas; Kamp Martin; Forchel Alfred
Optimization of photonic crystal cavity for chemical sensing
75.
Sünner Thomas; Schneider Christian; Strauß Micha; Huggenberger Alexander; Wiener Daniel; Höfling Sven; Kamp Martin; Forchel Alfred
Scalable fabrication of optical resonators with embedded site-controlled quantum dots
76.
Sünner T.; Stichel T.; Kwon S.-H.; Schlereth T. W.; Höfling S.; Kamp M.; Forchel A.
Photonic crystal cavity based gas sensor
77.
Crankshaw S.; Reitzenstein S.; Chuang L. C.; Moewe M.; Münch S.; Böckler C.; Forchel A.; Chang-Hasnain C.
Recombination dynamics in wurtzite InP nanowires
78.
Bacher G.; Welsch M. K.; Forchel A.; Lyanda-Geller Y.; Reinecke T. L.; Becker C. R.; Molenkamp L. W.
Tunable quantum coupling in a II-VI quantum dot molecule
79.
Motyka M.; Kudrawiec R.; Misiewicz J.; Hümmer M.; Rößner K.; Lehnhardt T.; Müller M.; Forchel A.
Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence
80.
Lehnhardt T.; Hümmer M.; Rößner K.; Müller M.; Höfling S.; Forchel A.
Continuous wave single mode operation of GaInAsSb/;GaSb quantum well lasers emitting beyond 3 μ;m
81.
Schneider C.; Strauß M.; Sünner T.; Huggenberger A.; Wiener D.; Reitzenstein S.; Kamp M.; Höfling S.; Forchel A.
Lithographic alignment to site-controlled quantum dots for device integration
82.
Gerschütz F.; Fischer M.; Koeth J.; Krestnikov I.; Kovsh A.; Schilling C.; Kaiser W.; Höfling S.; Forchel A.
1.3 μm Quantum Dot Laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation
83.
Heinrich J.; Langhans R.; Vitiello M. S.; Scamarcio G.; Indjin D.; Evans C. A.; Ikonić Z.; Harrison P.; Höfling S.; Forchel A.
Wide wavelength tuning of GaAs/;AlxGa1-x;As bound-to-continuum quantum cascade lasers by aluminum content control
84.
Reitzenstein S.; Böckler C.; Bazhenov A.; Gorbunov A.; Löffler A.; Kamp M.; Kulakovskii V. D.; Forchel A.
Single quantum dot controlled lasing effects in high-Q micropillar cavities
85.
Ultrahigh-Q photonic crystal cavity created by modulating air hole radius of a waveguide
86.
Böckler C.; Reitzenstein S.; Kistner C.; Debusmann R.; Löffler A.; Kida T.; Höfling S.; Forchel A.; Grenouillet L.; Claudon J.; Gérard J. M.
Electrically driven high-Q quantum dot-micropillar cavities
87.
Margapoti E.; Worschech L.; Mahapatra S.; Brunner K.; Forchel A.; Alves Fabrizio M.; Lopez-Richard V.; Marques G. E.; Bougerol C.
Negative magnetopolarization in thermally annealed self-assembled quantum dots
88.
Lang S.; Worschech L.; Emmerling M.; Strauß M.; Höfling S.; Forchel A.
Selective etching of independent contacts in a double quantum-well structure: Quantum-gate transistor
89.
Capua A.; Mikhelashvili V.; Eisenstein G.; Reithmaier J. P.; Somers A.; Forchel A.; Calligaro M.; Parillaud O.; Krakowski M.
Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm
90.
Kudrawiec R.; Motyka M.; Misiewicz J.; Hümmer M.; Rößner K.; Lehnhardt T.; Müller M.; Forchel A.
Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92/;GaSb single quantum wells of various widths
91.
Nähle Lars; Semmel Julia; Kaiser Wolfgang; Höfling Sven; Forchel Alfred
Erratum: “Tapered quantum cascade lasers” [Appl. Phys. Lett.; 91, 181122 (2007)]
92.
Hein S.; von Hinten V.; Höfling S.; Forchel A.
The impact of p-doping on the static and dynamic properties of 1.5 μ;m quantum dash lasers on InP
93.
Nowicki-Bringuier Y.-R.; Claudon J.; Böckler C.; Reitzenstein S.; Kamp M.; Morand A.; Forchel A.; Gérard J. M.
High Q whispering gallery modes in GaAs/AlAs pillar microcavities
94.
Mujumdar S.; Koenderink A. F.; Sünner T.; Buchler B. C.; Kamp M.; Forchel A.; Sandoghdar V.
Near-field imaging and frequency tuning of a high-Q photonic crystal membrane microcavity
95.
Schuller Ch.; Höfling S.; Forchel A.; Etrich C.; Pertsch T.; Iliew R.; Lederer F.; Reithmaier J. P.
Highly efficient and compact photonic wire splitters on GaAs
96.
Bisping D.; Schneider S.; Höfling S.; Habermann S.; Fischer M.; Koeth J.; Forchel A.
1240nm high-power GaInNAs laser diodes
97.
Mueller M.; Bauer A.; Lehnhardt T.; Rössner K.; Hümmer M.; Forchel A.
One dimensional and two dimensional photonic crystal GaInSb/;AlGaAsSb microlasers
98.
Tapered quantum cascade lasers
99.
Reitzenstein S.; Münch S.; Hofmann C.; Forchel A.; Crankshaw S.; Chuang L. C.; Moewe M.; Chang-Hasnain C.
Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition
100.
Semmel J.; Nähle L.; Höfling S.; Forchel A.
Edge emitting quantum cascade microlasers on InP with deeply etched one-dimensional photonic crystals
101.
Kaiser W.; Reithmaier J. P.; Forchel A.; Odriozola H.; Esquivias I.
Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs/;GaAs quantum dots
102.
Reitzenstein S.; Hofmann C.; Gorbunov A.; Strauß M.; Kwon S. H.; Schneider C.; Löffler A.; Höfling S.; Kamp M.; Forchel A.
AlAs/;GaAs micropillar cavities with quality factors exceeding 150.000
103.
Spanheimer D.; Worschech L.; Müller C. R.; Forchel A.
Space charge induced gating by a leaky gate
104.
Motyka M.; Kudrawiec R.; Sęk G.; Misiewicz J.; Bisping D.; Marquardt B.; Forchel A.; Fischer M.
Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
105.
Schlereth T. W.; Schneider C.; Kaiser W.; Höfling S.; Forchel A.
Low threshold, high gain AlGaInAs quantum dot lasers
106.
Contactless electroreflectance investigation of energy levels in a 1.3 μ;m emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs/;GaAs quantum wells
107.
Ponomarev I. V.; Schwab M.; Dasbach G.; Bayer M.; Reinecke T. L.; Reithmaier J. P.; Forchel A.
Influence of geometric disorder on the band structure of a photonic crystal: Experiment and theory
108.
Margapoti E.; Worschech L.; Forchel A.; Tribu A.; Aichele T.; André R.; Kheng K.
Annealing induced inversion of quantum dot fine-structure splitting
109.
Wallin D.; Fuhrer A.; Fröberg L. E.; Samuelson L.; Xu H. Q.; Hofling S.; Forchel A.
Detection of charge states in nanowire quantum dots using a quantum point contact
110.
Ates S.; Ulrich S. M.; Michler P.; Reitzenstein S.; Löffler A.; Forchel A.
Coherence properties of high-β; elliptical semiconductor micropillar lasers
111.
Sünner T.; Gellner M.; Löffler A.; Kamp M.; Forchel A.
Group delay measurements on photonic crystal resonators
112.
Hofmann H.; Scherer H.; Deubert S.; Kamp M.; Forchel A.
Spectral and spatial single mode emission from a photonic crystal distributed feedback laser
113.
Press David; Götzinger Stephan; Reitzenstein Stephan; Hofmann Carolin; Löffler Andreas; Kamp Martin; Forchel Alfred; Yamamoto Yoshihisa
Photon Antibunching from a Single Quantum-Dot-Microcavity System in the Strong Coupling Regime
114.
Hartmann D.; Lang S.; Worschech L.; Forchel A.
Shunt quantum capacitance induced source switching in an electron Y-branch switch
115.
Sęk G.; Poloczek P.; Podemski P.; Kudrawiec R.; Misiewicz J.; Somers A.; Hein S.; Höfling S.; Forchel A.
Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for ;1.55 μ;m emission
116.
Ulrich S. M.; Gies C.; Ates S.; Wiersig J.; Reitzenstein S.; Hofmann C.; Löffler A.; Forchel A.; Jahnke F.; Michler P.
Photon Statistics of Semiconductor Microcavity Lasers
117.
Kudrawiec R.; Motyka M.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.; Sauerwald A.; Kümmell T.; Bacher G.
Contactless electroreflectance of InAs/;In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate; Analysis of the wetting layer transition
118.
Schmidt T.; Scheibner M.; Worschech L.; Forchel A.; Slobodskyy T.; Molenkamp L. W.
Sign reversal and light controlled tuning of circular polarization in semimagnetic CdMnSe quantum dots
119.
Höfling S.; Heinrich J.; Reithmaier J. P.; Forchel A.; Seufert J.; Fischer M.; Koeth J.
Widely tunable single-mode quantum cascade lasers with two monolithically coupled Fabry-Pérot cavities
120.
CdSe quantum dot microdisk laser
121.
Reitzenstein S.; Ponomarev I. V.; Keldysh L. V.; Kulakovskii V. D.; Forchel A.; Reithmaier J. P.; Kamp Martin; Hofmann C.; Kubanek A.; Löffler Andreas; Reinecke T. L.
Coherent photonic coupling of semiconductor quantum dots: erratum
122.
Margapoti E.; Worschech L.; Forchel A.; Slobodskyy T.; Molenkamp L. W.
Enhanced Zn–Cd interdiffusion and biexciton formation in self-assembled CdZnSe quantum dots in thermally annealed small mesas
123.
Sęk G.; Poloczek P.; Ryczko K.; Misiewicz J.; Löffler A.; Reithmaier J. P.; Forchel A.
Photoreflectance determination of the wetting layer thickness in the InxGa1-x;As/;GaAs quantum dot system for a broad indium content range of 0.3–1
124.
Höfling S.; Heinrich J.; Hofmann H.; Kamp M.; Reithmaier J. P.; Forchel A.; Seufert J.
Photonic crystal quantum cascade lasers with improved threshold characteristics operating at room temperature
125.
Podemski P.; Kudrawiec R.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.
Thermal quenching of photoluminescence from InAs/;In0.53Ga0.23Al0.24As/;InP quantum dashes with different sizes
126.
Hartmann D.; Worschech L.; Höfling S.; Forchel A.; Reithmaier J. P.
Self-gating in an electron Y-branch switch at room temperature
127.
Renner J.; Worschech L.; Forchel A.; Mahapatra S.; Brunner K.
Whispering gallery modes in high quality ZnSe/;ZnMgSSe microdisks with CdSe quantum dots studied at room temperature
128.
van der Poel M.; Mørk J.; Somers A.; Forchel A.; Reithmaier J. P.; Eisenstein G.
Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55 μ;m
129.
Babinski A.; Ortner G.; Raymond S.; Potemski M.; Bayer M.; Sheng W.; Hawrylak P.; Wasilewski Z.; Fafard S.; Forchel A.
Ground-state emission from a single InAs/;GaAs self-assembled quantum dot structure in ultrahigh magnetic fields
130.
Podemski P.; Kudrawiec R.; Misiewicz J.; Somers A.; Reithmaier J. P.; Forchel A.
On the tunnel injection of excitons and free carriers from In0.53Ga0.47As/;In0.53Ga0.23Al0.24As quantum well to InAs/;In0.53Ga0.23Al0.24As quantum dashes
131.
Somers A.; Kaiser W.; Reithmaier J. P.; Forchel A.; Gioaninni M.; Montrosset I.
Optical gain properties of InAs/;InAlGaAs/;InP quantum dash structures with a spectral gain bandwidth of more than 300 ;nm
132.
Reitzenstein S.; Bazhenov A.; Gorbunov A.; Hofmann C.; Münch S.; Löffler A.; Kamp M.; Reithmaier J. P.; Kulakovskii V. D.; Forchel A.
Lasing in high-Q quantum-dot micropillar cavities
133.
Mahapatra S.; Kiessling T.; Margapoti E.; Astakhov G. V.; Ossau W.; Worschech L.; Forchel A.; Brunner K.
Formation mechanism and properties of CdSe quantum dots on ZnSe by low temperature epitaxy and in situ annealing
134.
Rudno-Rudziński W.; Kudrawiec R.; Podemski P.; Sęk G.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.
Photoreflectance-probed excited states in InAs/;InGaAlAs quantum dashes grown on InP substrate
135.
Schwab M.; Benyoucef M.; Forchel A.; Reithmaier J. P.; Jahnke F.; Gies C.; Baer N.; Wiersig J.; Bayer M.; Berstermann T.; Auer T.; Kurtze H.; Michler P.
Radiative emission dynamics of quantum dots in a single cavity micropillar
136.
Härkönen A.; Guina M.; Okhotnikov O.; Rößner K.; Hümmer M.; Lehnhardt T.; Müller M.; Forchel A.; Fischer M.
1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm
137.
Sauerwald A.; Kümmell T.; Peskes D.; Bacher G.; Löffler A.; Reithmaier J. P.; Forchel A.
Scanning transmission electron microscope study on vertically correlated InGaAs/;GaAs quantum dots
138.
Poloczek P.; Sęk G.; Misiewicz J.; Löffler A; Reithmaier J. P.; Forchel A.
Optical properties of low-strained InxGa1-x;As/;GaAs quantum dot structures at the two-dimensional–three-dimensional growth transition
139.
Höfling S.; Jovanović V. D.; Indjin D.; Reithmaier J. P.; Forchel A.; Ikonić Z.; Vukmirović N.; Harrison P.; Mirčetić A.; Milanović V.
Dependence of saturation effects on electron confinement and injector doping in GaAs/;Al0.45Ga0.55As quantum-cascade lasers
140.
Reitzenstein S.; Löffler Andreas; Hofmann C.; Kubanek A.; Kamp Martin; Reithmaier J. P.; Forchel Alfred; Kulakovskii V. D.; Keldysh L. V.; Ponomarev I. V.; Reinecke T. L.
Coherent photonic coupling of semiconductor quantum dots
141.
Ferrini R.; Leuenberger D.; Houdré R.; Benisty H.; Kamp Martin; Forchel Alfred
Disorder-induced losses in planar photonic crystals
142.
Jovanović V. D.; Reithmaier J. P.; Harrison P.; Ikonić Z.; Vukmirović N.; Indjin D.; Höfling S.; Forchel A.
Influence of doping density on electron dynamics in GaAs/;AlGaAs quantum cascade lasers
143.
Herrmann Rafael; Sünner Thomas; Hein Tobias; Löffler Andreas; Kamp Martin; Forchel Alfred
Ultrahigh-quality photonic crystal cavity in GaAs
144.
Rudno-Rudziński W.; Kudrawiec R.; Sęk G.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.
Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As/;In0.53Ga0.23Al0.24As quantum well grown on InP substrate
145.
Scheibner M.; Schmidt G.; Slobodskyy T.; Bacher G.; Forchel A.; Worschech L.; Kennedy T. A.; Molenkamp L. W.
Coherent dynamics of locally interacting spins in self-assembled Cd1-x;MnxSe/;ZnSe quantum dots
146.
Scherer H.; Namje K.; Deubert S.; Löffler A.; Reithmaier J. P.; Kamp M.; Forchel A.
Integrated four-channel GaAs-based quantum dot laser module with photonic crystals
147.
Schuller Ch.; Reithmaier J. P.; Zimmermann J.; Kamp M.; Forchel A.; Anand S.
Polarization-dependent optical properties of planar photonic crystals infiltrated with liquid crystals
148.
Ortner G.; Schwab M.; Bayer M.; Pässler R.; Fafard S.; Wasilewski Z.; Hawrylak P.; Forchel A.
Temperature dependence of the excitonic band gap in InxGa1-x;As/;GaAs self-assembled quantum dots
149.
Hadass D.; Mikhelashvili V.; Eisenstein G.; Somers A.; Deubert S.; Kaiser W.; Reithmaier J. P.; Forchel A.; Finzi D.; Maimon Y.
Time-resolved chirp in an InAs/;InP quantum-dash optical amplifier operating with 10 ;Gbit/;s data
150.
Halm S.; Bacher G.; Schömig H.; Forchel A.; Off J.; Scholz F.
Optical Spectroscopy on Single Localized States in an InGaN/GaN Structure
151.
Baer Norman; Wiersig Jan; Gartner Paul; Jahnke Frank; Benyoucef Mohamed; Ulrich Sven M.; Michler Peter; Forchel Alfred
Optical properties of semiconductor quantum dots and pillar microcavities
152.
Marko I. P.; Andreev A. D.; Sweeney S. J.; Adams A. R.; Krebs R.; Deubert S.; Reithmaier J. P.; Forchel A.
The Influence of Auger Processes on Recombination in Long‐Wavelength InAs/GaAs Quantum Dots
153.
Ulrich S. M.; Kurtze H.; Oulton R.; Bayer M.; Fafard S.; Wasilewski Z.; Benyoucef M.; Michler P.; Wiersig J.; Baer N.; Gartner P.; Jahnke F.; Schwab M.; Forchel A.
Single‐Photon And Photon Pair Emission From Individual (In,Ga)As Quantum Dots
154.
Sauerwald A.; Kümmell T.; Bacher G.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.
Structural Analysis of InAs Quantum Dashes Grown on InP Substrate by Scanning Transmission Electron Microscopy
155.
Lyanda-Geller Y. B.; Bacher G.; Reinecke T. L.; Welsch M. K.; Forchel A.; Becker C. R.; Molenkamp L.
Strongly Tunable Coupling Between Quantum Dots
156.
Size control of InAs quantum dashes
157.
Ulrich S. M.; Wasilewski Z.; Fafard S.; Bayer M.; Kurtze H.; Schwab M.; Jahnke F.; Gartner P.; Baer N.; Michler P.; Benyoucef M.; Forchel A.
Correlated photon-pair emission from a charged single quantum dot
158.
Ortner G.; Reithmaier J. P.; Kress A.; Reinecke T. L.; Lyanda-Geller Y.; Bayer M.; Forchel A.
Control of Vertically Coupled InGaAs/GaAs Quantum Dots with Electric Fields
159.
Dasbach G.; Diederichs C.; Tignon J.; Ciuti C.; Roussignol Ph.; Delalande C.; Bayer M.; Forchel A.
Polarization inversion via parametric scattering in quasi-one-dimensional microcavities
160.
Ortner G.; Yugova I.; von Högersthal G. Baldassarri Höger; Larionov A.; Kurtze H.; Yakovlev D. R.; Bayer M.; Fafard S.; Wasilewski Z.; Hawrylak P.; Lyanda-Geller Y. B.; Reinecke T. L.; Babinski A.; Potemski M.; Timofeev V. B.; Forchel A.
Fine structure in the excitonic emission of InAs/;GaAs quantum dot molecules
161.
Löffler A.; Reithmaier J. P.; Sęk G.; Hofmann C.; Reitzenstein S.; Kamp M.; Forchel A.
Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions
162.
Rudno-Rudziński W.; Sęk G.; Ryczko K.; Kudrawiec R.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.
Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures
163.
Leuenberger David; Ferrini Rolando; Dunbar L. Andrea; Houdré Romuald; Kamp Martin; Forchel Alfred
Codirectional couplers in GaAs-based planar photonic crystals
164.
Benyoucef M.; Ulrich S. M.; Michler P.; Wiersig J.; Jahnke F.; Forchel A.
Correlated photon pairs from single (In,Ga)As/;GaAs quantum dots in pillar microcavities
165.
Hadass D.; Alizon R.; Dery H.; Mikhelashvili V.; Eisenstein G.; Schwertberger R.; Somers A.; Reithmaier J. P.; Forchel A.; Calligaro M.; Bansropun S.; Krakowski M.
Spectrally resolved dynamics of inhomogeneously broadened gain in InAs/;InP 1550 ;nm quantum-dash lasers
166.
Ortner G.; Yakovlev D. R.; Bayer M.; Rudin S.; Reinecke T. L.; Fafard S.; Wasilewski Z.; Forchel A.
Temperature dependence of the zero-phonon linewidth in InAs/;GaAs quantum dots
167.
Zimmermann J.; Scherer H.; Kamp M.; Deubert S.; Reithmaier J. P.; Forchel A.; März R.; Anand S.
Photonic crystal waveguides with propagation losses in the 1 ;dB/;mm range
168.
Scherer H.; Gollub D.; Kamp M.; Forchel A.
GaAs-based 1.3 μ;m microlasers with photonic crystal mirrors
169.
Schömig H.; Halm S.; Puls J.; Back C. H.; Kipferl W.; Forchel A.; Bacher G.; Henneberger F.
Micromagnetoluminescence on ferromagnet–semiconductor hybrid nanostructures
170.
Dery H.; Benisty E.; Epstein A.; Alizon R.; Mikhelashvili V.; Eisenstein G.; Schwertberger R.; Gold D.; Reithmaier J. P.; Forchel A.
On the nature of quantum dash structures
171.
Schömig H.; Forchel A.; Halm S.; Bacher G.; Puls J.; Henneberger F.
Magnetic imprinting of submicron ferromagnetic wires on a diluted magnetic semiconductor quantum well
172.
Auzanneau Sophie-Charlotte; Calligaro Michel; Krakowski Michel; Klopf Frank; Deubert Stefan; Reithmaier Johann Peter; Forchel Alfred
High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability
173.
Schömig H.; Halm S.; Forchel A.; Bacher G.; Off J.; Scholz F.
Probing Individual Localization Centers in an InGaN/GaN Quantum Well
174.
Mulot M.; Moosburger J.; Houdré R.; Wild B.; Ferrini R.; Anand S.; Forchel A.
Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching
175.
Obert M.; Renner J.; Forchel A.; Bacher G.; André R.; Le Si Dang D.
Nonlinear emission in II–VI pillar microcavities; Strong versus weak coupling
176.
Seufert J.; Bacher G.; Schömig H.; Forchel A.; Hansen L.; Schmidt G.; Molenkamp L. W.
Spin injection into a single self-assembled quantum dot
177.
Qiu Min; Mulot Mikaël; Swillo Marcin; Anand Srinivasan; Jaskorzynska Bozena; Karlsson Anders; Kamp Martin; Forchel Alfred
Photonic crystal optical filter based on contra-directional waveguide coupling
178.
Dorozhkin P. S.; Dobrowolska M.; Lee S.; Forchel A.; Bacher G.; Schoemig H.; Maksimov A. A.; Brichkin A. S.; Kulakovskii V. D.; Chernenko A. V.; Furdyna J. K.
Longitudinal and transverse fluctuations of magnetization of the excitonic magnetic polaron in a semimagnetic single quantum dot
179.
Dechow Jörn; Lanz Titus; Stumber Michael; Forchel Alfred; Haase Axel
Preamplified planar microcoil on GaAs substrates for microspectroscopy
180.
Kudrawiec R.; Se☒k G.; Misiewicz J.; Gollub D.; Forchel A.
Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells
181.
Worschech L.; Reitzenstein S.; Hartmann P.; Kaiser S.; Kamp M.; Forchel A.
Self-switching of branched multiterminal junctions: a ballistic half-adder
182.
Ulrich S. M.; Strauf S.; Michler P.; Bacher G.; Forchel A.
Triggered polarization-correlated photon pairs from a single CdSe quantum dot
183.
Reithmaier J. P.; Bach L.; Forchel A.
Focused Ion Beam Technology for Optoelectronic Devices
184.
Geddo M.; Guizzetti G.; Capizzi M.; Polimeni A.; Gollub D.; Forchel A.
Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-x;As1-y;Ny alloy
185.
Schallenberg T.; Faschinger W.; Karczewski G.; Molenkamp L. W.; Türck V.; Rodt S.; Heitz R.; Bimberg D.; Obert M.; Bacher G.; Forchel A.
In situ lateral growth control of optically efficient quantum structures
186.
Alizon R.; Bilenca A.; Dery H.; Mikhelashvili V.; Eisenstein G.; Schwertberger R.; Gold D.; Reithmaier J. P.; Forchel A.
Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning
187.
Baldassarri Höger von Högersthal G.; Polimeni A.; Masia F.; Bissiri M.; Capizzi M.; Gollub D.; Fischer M.; Forchel A.
Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures
188.
Seufert J.; Rambach M.; Bacher G.; Forchel A.; Passow T.; Hommel D.
Single-electron charging of a self-assembled II–VI quantum dot
189.
Mahnkopf S.; Kamp M.; Forchel A.; März R.
Tunable distributed feedback laser with photonic crystal mirrors
190.
Vinattieri A.; Alderighi D.; Zamfirescu M.; Colocci M.; Polimeni A.; Capizzi M.; Gollub D.; Fischer M.; Forchel A.
Role of the host matrix in the carrier recombination of InGaAsN alloys
191.
Mensing T.; Worschech L.; Schwertberger R.; Reithmaier J. P.; Forchel A.
Magneto-optical investigations of single self-assembled InAs/InGaAlAs quantum dashes
192.
Schuller Ch.; Klopf F.; Reithmaier J. P.; Kamp M.; Forchel A.
Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals
193.
Scheibner M.; Bacher G.; Weber S.; Forchel A.; Passow Th.; Hommel D.
Polarization dynamics in self-assembled CdSe/ZnSe quantum dots: The role of excess energy
194.
Reitzenstein S.; Worschech L.; Hartmann P.; Forchel A.
Pronounced switching bistability in a feedback coupled nanoelectronic Y-branch switch
195.
Ortner G.; Fafard S.; Hawrylak P.; Reinecke T. L.; Lyanda-Geller Y. B.; Forchel A.; Timofeev V. B.; Larionov A.; Bayer M.; Wasilewski Z.
Fine Structure of Excitons in InAs/GaAs Coupled Quantum Dots: A Sensitive Test of Electronic Coupling
196.
Happ Thomas D.; Kamp Martin; Forchel Alfred; Bazhenov Anatolii V.; Tartakovskii Ilja I.; Gorbunov Alexander; Kulakovskii Vladimir D.
Coupling of point-defect microcavities in two-dimensional photonic-crystal slabs
197.
Kubisa M.; Bryja L.; Ryczko K.; Misiewicz J.; Bardot C.; Potemski M.; Ortner G.; Bayer M.; Forchel A.; Sørensen C. B.
Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-x;As/GaAs heterostructures
198.
Happ Thomas D.; Kamp Martin; Forchel Alfred; Gentner Jean-Louis; Goldstein L.
Two-dimensional photonic crystal coupled-defect laser diode
199.
Kaiser S.; Mensing T.; Worschech L.; Klopf F.; Reithmaier J. P.; Forchel A.
Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well
200.
Gollub D.; Fischer M.; Kamp M.; Forchel A.
1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes
201.
Passow T.; Leonardi K.; Heinke H.; Hommel D.; Litvinov D.; Rosenauer A.; Gerthsen D.; Seufert J.; Bacher G.; Forchel A.
Quantum dot formation by segregation enhanced CdSe reorganization
202.
Reitzenstein S.; Worschech L.; Hartmann P.; Kamp M.; Forchel A.
Capacitive-Coupling-Enhanced Switching Gain in an Electron Y-Branch Switch
203.
Dasbach G.; Schwab M.; Bayer M.; Krizhanovskii D.N.; Forchel A.
Tailoring the polariton dispersion by optical confinement: Access to a manifold of elastic polariton pair scattering channels
204.
Strauf S.; Michler P.; Klude M.; Hommel D.; Bacher G.; Forchel A.
Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor
205.
Sebald K.; Michler P.; Passow T.; Hommel D.; Bacher G.; Forchel A.
Single-photon emission of CdSe quantum dots at temperatures up to 200 K
206.
Bacher G.; Dobrowolska M.; Lee S.; Chernenko A. V.; Dorozhkin P. S.; Forchel A.; Welsch M. K.; Kulakovskii V. D.; Schömig H.; Maksimov A. A.; Furdyna J. K.
Monitoring Statistical Magnetic Fluctuations on the Nanometer Scale
207.
Zhuk V.; Regelman D.V.; Gershoni D.; Bayer M.; Reithmaier J.P.; Forchel A.; Knipp P.A.; Reinecke T.L.
Near-field mapping of the electromagnetic field in confined photon geometries
208.
Schliemann A.; Worschech L.; Reitzenstein S.; Kaiser S.; Forchel A.
Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots
209.
Kammerer C.; Forchel A.; Reithmaier J. P.; Klopf F.; Roussignol Ph.; Delalande C.; Cassabois G.; Voisin C.; Gérard J. M.
Line narrowing in single semiconductor quantum dots: Toward the control of environment effects
210.
Happ T. D.; Tartakovskii I. I.; Kulakovskii V. D.; Reithmaier J.-P.; Kamp M.; Forchel A.
Enhanced light emission of InxGa1-x;As quantum dots in a two-dimensional photonic-crystal defect microcavity
211.
Bissiri M.; von Högersthal G. Baldassarri Höger; Polimeni A.; Capizzi M.; Gollub D.; Fischer M.; Reinhardt M.; Forchel A.
Role of N clusters in InxGa1-x;As1-y;Ny band-gap reduction
212.
Klopf F.; Deubert S.; Reithmaier J. P.; Forchel A.
Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers
213.
Dasbach G.; Dremin A. A.; Bayer M.; Kulakovskii V. D.; Gippius N. A.; Forchel A.
Oscillations in the differential transmission of a semiconductor microcavity with reduced symmetry
214.
Polimeni A.; Bissiri M.; Augieri A.; Baldassarri Höger von Högersthal G.; Capizzi M.; Gollub D.; Fischer M.; Reinhardt M.; Forchel A.
Reduced temperature dependence of the band gap in GaAs1-y;Ny investigated with photoluminescence
215.
Bissiri M.; Reinhardt M.; Fischer M.; Gollub D.; Stavola M.; Jiang F.; Bonapasta A. Amore; Capizzi M.; Ranalli F.; Gaspari V.; Polimeni A.; Baldassarri Höger von Högersthal G.; Forchel A.
Hydrogen-induced passivation of nitrogen in GaAs1-y;Ny
216.
Bayer M.; Ortner G.; Stern O.; Kuther A.; Gorbunov A. A.; Forchel A.; Hawrylak P.; Fafard S.; Hinzer K.; Reinecke T. L.; Walck S. N.; Reithmaier J. P.; Klopf F.; Schäfer F.
Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots
217.
Moosburger Jürgen; Kamp Martin; Forchel Alfred; Oesterle Ursula; Houdré Romuald
Transmission spectroscopy of photonic crystal based waveguides with resonant cavities
218.
Fischer Marc; Gollub Dirk; Forchel Alfred
1.3 μm GaInAsN Laserdiodes with improved High Temperature Performance
219.
Krebs Roland; Reithmaier Johann Peter; Klopf Frank; Forchel Alfred
High Performance 1.3 μm Quantum-Dot Lasers
220.
Obert M.; Wild B.; Bacher G.; Forchel A.; André R.; Dang Le Si
Optical confinement in CdTe-based photonic dots
221.
Bayer M.; Forchel A.
Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots
222.
Seufert J.; Bacher G.; Scheibner M.; Forchel A.; Lee S.; Dobrowolska M.; Furdyna J. K.
Dynamical Spin Response in Semimagnetic Quantum Dots
223.
Happ Thomas D.; Markard Alexander; Kamp Martin; Forchel Alfred; Anand Srinivasan
Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals
224.
Moosburger Jürgen; Kamp Martin; Forchel Alfred; Olivier Ségolène; Benisty Henri; Weisbuch Claude; Oesterle Ursula
Enhanced transmission through photonic-crystal-based bent waveguides by bend engineering
225.
Dasbach G.; Schwab M.; Bayer M.; Forchel A.
Parametric polariton scattering in microresonators with three-dimensional optical confinement
226.
Bayer M.; Kuther A.; Kulakovskii V. D.; Forchel A.; Knipp P. A.; Reinecke T. L.
Control of light polarization in structured cavities by a magnetic field
227.
Worschech L.; Xu H. Q.; Forchel A.; Samuelson L.
Bias-voltage-induced asymmetry in nanoelectronic Y-branches
228.
Happ T. D.; Markard A.; Kamp M.; Forchel A.; Anand S.; Gentner J.-L.; Bouadma N.
Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers
229.
Müller M.; Kamp M.; Forchel A.; Gentner J.-L.
Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP–InP
230.
Guttroff G.; Bayer M.; Reithmaier J. P.; Forchel A.; Knipp P. A.; Reinecke T. L.
Photonic defect states in chains of coupled microresonators
231.
Bissiri M.; Gaspari V.; Polimeni A.; Baldassarri Höger von Högersthal G.; Capizzi M.; Frova A.; Fischer M.; Reinhardt M.; Forchel A.
High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells
232.
Bach L.; Reithmaier I. P.; Forchel A.; Gentner J. L.; Goldstein L.
Multiwavelength laterally complex coupled distributed feedback laser arrays with monolithically integrated combiner fabricated by focused-ion-beam lithography
233.
Sun Y. T.; Rodrı´guez Messmer E.; Lourdudoss S.; Ahopelto J.; Rennon S.; Reithmaier J. P.; Forchel A.
Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
234.
Seufert J.; Obert M.; Bacher G.; Forchel A.; Passow T.; Leonardi K.; Hommel D.
Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots
235.
Worschech Lukas; Fischer Frank; Forchel Alfred; Kamp Martin; Schweizer Heinz
High Frequency Operation of Nanoelectronic Y-Branch at Room Temperature
236.
Seufert J.; Obert M.; Scheibner M.; Gippius N. A.; Bacher G.; Forchel A.; Passow T.; Leonardi K.; Hommel D.
Stark effect and polarizability in a single CdSe/ZnSe quantum dot
237.
Bacher G.; Schömig H.; Welsch M. K.; Zaitsev S.; Kulakovskii V. D.; Forchel A.; Lee S.; Dobrowolska M.; Furdyna J. K.; König B.; Ossau W.
Optical spectroscopy on individual CdSe/ZnMnSe quantum dots
238.
Happ Thomas D.; Kamp Martin; Forchel Alfred
Photonic crystal tapers for ultracompact mode conversion
239.
Kamp M.; Hofmann J.; Forchel A.; Lourdudoss S.
Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors
240.
Baldassarri H. v. H. G.; Bissiri M.; Polimeni A.; Capizzi M.; Fischer M.; Reinhardt M.; Forchel A.
Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells
241.
Worschech L.; Weidner B.; Reitzenstein S.; Forchel A.
Investigation of switching effects between the drains of an electron Y-branch switch
242.
Polimeni A.; Baldassarri H. v. G.; Bissiri H. M.; Capizzi M.; Fischer M.; Reinhardt M.; Forchel A.
Effect of hydrogen on the electronic properties of InxGa1-x;As1-y;Ny/GaAs quantum wells
243.
Polimeni A.; Capizzi M.; Geddo M.; Fischer M.; Reinhardt M.; Forchel A.
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-x;As1-y;Ny/GaAs single quantum wells
244.
Welsch M. K.; Schömig H.; Legge M.; Bacher G.; Forchel A.; König B.; Becker C. R.; Ossau W.; Molenkamp L. W.
Selective thermal interdiffusion using patterned SiO2 masks: An alternative approach to buried CdTe/CdMgTe quantum wires
245.
Legge M.; Bacher G.; Bader S.; Kümmell T.; Forchel A.; Nürnberger J.; Schumacher C.; Faschinger W.; Landwehr G.
Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors
246.
Baars T.; Dasbach G.; Bayer M.; Forchel A.
Biexciton states in semiconductor microcavities
247.
Wagner H. P.; Tranitz H.-P.; Schuster R.; Bacher G.; Forchel A.
Biexciton binding energy and exciton–LO-phonon scattering in ZnSe quantum wires
248.
Baars T.; Bayer M.; Gorbunov A. A.; Forchel A.
Biexcitons in InxGa1-x;As/GaAs quantum wells subject to high magnetic fields
249.
Manninen Antti; Kauranen Jari; Prunnila Mika; Forchel Alfred; Emmerling Monika; Kamp Martin; Savin Alexander; Pekola Jukka; Ahopelto Jouni
Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate
250.
Guttroff G.; Bayer M.; Forchel A.; Knipp P. A.; Reinecke T. L.
Isomeric photonic molecules formed from coupled microresonators
251.
Hinzer K.; Hawrylak P.; Korkusinski M.; Fafard S.; Bayer M.; Stern O.; Gorbunov A.; Forchel A.
Optical spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As quantum dot
252.
Grenzer J.; Darowski N.; Pietsch U.; Daniel A.; Rennon S.; Reithmaier J. P.; Forchel A.
Grazing-incidence diffraction strain analysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation
253.
Keim M.; Toropov A.; Shubina T. V.; Sitnikova A. A.; Sorokin S.; Ivanov S.; Landwehr G.; Forchel A.; Bacher G.; Seufert J.; Korn M.; Waag A.
Be-enhanced CdSe island formation in CdSe/ZnSe heterostructures
254.
Worschech L.; Reitzenstein S.; Forchel A.
Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures
255.
Dasbach G.; Baars T.; Bayer M.; Larionov A.; Forchel A.
Coherent and incoherent polaritonic gain in a planar semiconductor microcavity
256.
Seufert J.; Rambach M.; Bacher G.; Forchel A.; Keim M.; Ivanov S.; Waag A.; Landwehr G.
Be-induced island formation in CdSe/ZnSe heterostructures: Ensemble versus single dot studies
257.
Martini Ingo; Kuhn Silke; Kamp Martin; Worschech Lukas; Forchel Alfred; Eisert Dominik; Koeth Johannes; Sijbesma Rint
Fabrication of quantum point contacts by imprint lithography and transport studies
258.
Moosburger J.; Happ Th.; Kamp M.; Forchel A.
Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors
259.
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
260.
Kristensen A.; Bruus H.; Hansen A. E.; Jensen J. B.; Lindelof P. E.; Marckmann C. J.; Nygård J.; Sørensen C. B.; Beuscher F.; Forchel A.; Michel M.
Bias and temperature dependence of the 0.7 conductance anomaly in quantum point contacts
261.
Martini Ingo; Eisert Dominik; Kamp Martin; Worschech Lukas; Forchel Alfred; Koeth Johannes
Quantum point contacts fabricated by nanoimprint lithography
262.
Maksimov A. A.; Bacher G.; McDonald A.; Landwehr G.; Becker C. R.; Forchel A.; Kulakovskii V. D.; Molenkamp L. W.
Magnetic polarons in a single diluted magnetic semiconductor quantum dot
263.
Wang T.; Bayer M.; Forchel A.; Gippius N. A.; Kulakovskii V.
Magneto-optical study of excitonic states in In0.045Ga0.955As/GaAs multiple coupled quantum wells
264.
Klopf F.; Reithmaier J. P.; Forchel A.
Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
265.
Rennon S.; Bach L.; Reithmaier J. P.; Forchel A.; Gentner J. L.; Goldstein L.
High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography
266.
Schreder B.; Materny A.; Kiefer W.; Kümmell T.; Bacher G.; Forchel A.; Landwehr G.
Raman investigation of CdxZn1-x;Se/ZnSe quantum wires; Strain relaxation and excitation profile
267.
Hawrylak P.; Bayer M.; Narvaez G. A.; Forchel A.
Excitonic Absorption in a Quantum Dot
268.
Aichmayr G.; Martı´n M. D.; van der Meulen H.; Pascual C.; Viña L.; Calleja J. M.; Schafer F.; Reithmaier J. P.; Forchel A.
Carrier and light trapping in graded quantum-well laser structures
269.
Seufert J.; Weigand R.; Bacher G.; Kümmell T.; Forchel A.; Leonardi K.; Hommel D.
Spectral diffusion of the exciton transition in a single self-organized quantum dot
270.
Bayer M.; Stern O.; Kuther A.; Forchel A.
Spectroscopic study of dark excitons in InxGa1-x;As self-assembled quantum dots by a magnetic-field-induced symmetry breaking
271.
Baars T.; Bayer M.; Forchel A.; Schäfer F.; Reithmaier J. P.
Polariton-polariton scattering in semiconductor microcavities: Experimental observation of thresholdlike density dependence
272.
Bayer M.; Gutbrod T.; Forchel A.; Reinecke T. L.; Knipp P. A.; Werner R.; Reithmaier J. P.
Optical Demonstration of a Crystal Band Structure Formation
273.
Ulyanenkov A.; Darowski N.; Grenzer J.; Pietsch U.; Wang K. H.; Forchel A.
Evaluation of strain distribution in freestanding and buried lateral nanostructures
274.
Bacher G.; Weigand R.; Seufert J.; Kulakovskii V. D.; Gippius N. A.; Forchel A.; Leonardi K.; Hommel D.
Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot
275.
Tachibana Koichi; Someya Takao; Arakawa Yasuhiko; Werner Ralph; Forchel Alfred
Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
276.
Walck S. N.; Reinecke T. L.; Bayer M.; Gutbrod T.; Reithmaier J. P.; Forchel A.
Magnetic-field dependence of the exciton-photon coupling in structured photonic cavities
277.
Mais N.; Reithmaier J. P.; Forchel A.; Kohls M.; Spanhel L.; Müller G.
Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applications
278.
König Harald; Reithmaier Johann Peter; Forchel Alfred
Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching
279.
Bayer M.; Kuther A.; Schäfer F.; Reithmaier J. P.; Forchel A.
Strong variation of the exciton g factors in self-assembled In0.60Ga0.40As quantum dots
280.
König H.; Rennon S.; Reithmaier J. P.; Forchel A.; Gentner J. L.; Goldstein L.
1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
281.
Room temperature lasing action in an Ingan quantum dot laser under optical excitation
282.
Bacher G.; Kümmell T.; Eisert D.; Forchel A.; König B.; Ossau W.; Becker C. R.; Landwehr G.
Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography
283.
Worschech L.; Beuscher F.; Forchel A.
Quantized conductance in up to 20 μm long shallow etched GaAs/AlGaAs quantum wires
284.
Bacher G.; Eisert D.; Kümmell T.; Forchel A.; Kühnelt M.; Wagner H. P.; Landwehr G.
Implantation induced changes in II-VI semiconductor heterostructures
285.
Schäfer F.; Reithmaier J. P.; Forchel A.
High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
286.
Tartakovskii A. I.; Forchel A.; Dorozhkin P. S.; Kulakovskii V. D.; Reithmaier J. P.
Far-field emission pattern and photonic band structure in one-dimensional photonic crystals made from semiconductor microcavities
287.
Wang T.; Forchel A.
Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy
288.
Kulakovskii V. D.; Bacher G.; Weigand R.; Kümmell T.; Forchel A.; Borovitskaya E.; Leonardi K.; Hommel D.
Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe; Single Quantum Dots
289.
Bayer M.; Kuther A.; Forchel A.; Gorbunov A.; Timofeev V. B.; Schäfer F.; Reithmaier J. P.; Reinecke T. L.; Walck S. N.
Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In0.60Ga0.40As Quantum Dots
290.
Ulyanenkov A.; Baumbach T.; Darowski N.; Pietsch U.; Wang K. H.; Forchel A.; Wiebach T.
In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001]
291.
Kamp M.; Hofmann J.; Forchel A.; Schäfer F.; Reithmaier J. P.
Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers
292.
Herz K.; Bacher G.; Forchel A.; Straub H.; Brunthaler G.; Faschinger W.; Bauer G.; Vieu C.
Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization
293.
Gutbrod T.; Bayer M.; Forchel A.; Knipp P. A.; Reinecke T. L.; Tartakovskii A.; Kulakovskii V. D.; Gippius N. A.; Tikhodeev S. G.
Angle dependence of the spontaneous emission from confined optical modes in photonic dots
294.
Kamp M.; Emmerling M.; Kuhn S.; Forchel A.
Nanolithography using a 100 kV electron beam lithography system with a Schottky emitter
295.
Kuther A.; Bayer M.; Gutbrod T.; Forchel A.; Knipp P. A.; Reinecke T. L.; Werner R.
Confined optical modes in photonic wires
296.
Kümmell T.; Weigand R.; Bacher G.; Forchel A.; Leonardi K.; Hommel D.; Selke H.
Single zero-dimensional excitons in CdSe/ZnSe nanostructures
297.
Schäfer F.; Mayer B.; Reithmaier J. P.; Forchel A.
High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
298.
König H.; Reithmaier J. P.; Forchel A.; Gentner J. L.; Goldstein L.
1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
299.
Wang T.; Bayer M.; Forchel A.
Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells
300.
Bayer M.; Reinecke T. L.; Walck S. N.; Timofeev V. B.; Forchel A.
Multiple resonances involving magnetoexcitons in a GaAs/Al0.30Ga0.70As quantum well
301.
Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor
302.
Bayer M.; Gutbrod T.; Reithmaier J. P.; Forchel A.; Reinecke T. L.; Knipp P. A.; Dremin A. A.; Kulakovskii V. D.
Optical Modes in Photonic Molecules
303.
Kuther A.; Bayer M.; Forchel A.; Gorbunov A.; Timofeev V. B.; Schäfer F.; Reithmaier J. P.
Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots
304.
Ohnesorge B.; Weigand R.; Bacher G.; Forchel A.; Riedl W.; Karg F. H.
Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells
305.
Bayer M.; Steffen R.; Michel M.; Gorbunov A.; Kulakovskii V. D.; Forchel A.; Gutbrod T.; Wang K. H.
Exciton complexes in InxGa1-x;As/GaAs quantum dots
306.
Wang T.; Kieseling F.; Forchel A.
Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well
307.
Kühnelt M.; Leichtner T.; Kaiser S.; Hahn B.; Wagner H. P.; Eisert D.; Bacher G.; Forchel A.
Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation
308.
Baars T.; Braun W.; Bayer M.; Forchel A.
Biexcitons in semiconductor quantum wires
309.
König H.; Müssig H.; Forchel A.; Reithmaier J. P.; Höfling E.; Mais N.; Brugger H.
Focused ion beam implantation for opto- and microelectronic devices
310.
Kümmell T.; Bacher G.; Forchel A.; Lermann G.; Kiefer W.; Jobst B.; Hommel D.; Landwehr G.
Size dependence of strain relaxation and lateral quantization in deep etched CdxZn1-x;Se/ZnSe quantum wires
311.
Braun W.; Bayer M.; Forchel A.; Schmitt O. M.; Bányai L.; Haug H.; Filin A. I.
Size dependence of exciton-exciton scattering in semiconductor quantum wires
312.
Gippius N. A.; Yablonskii A. L.; Dzyubenko A. B.; Tikhodeev S. G.; Kulik L. V.; Kulakovskii V. D.; Forchel A.
Excitons in near-surface quantum wells in magnetic fields: Experiment and theory
313.
Gutbrod T.; Bayer M.; Forchel A.; Reithmaier J. P.; Reinecke T. L.; Rudin S.; Knipp P. A.
Weak and strong coupling of photons and excitons in photonic dots
314.
Koeth J.; Dietrich R.; Forchel A.
GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range
315.
Tartakovskii A. I.; Kulakovskii V. D.; Forchel A.; Reithmaier J. P.
Exciton-photon coupling in photonic wires
316.
Braun W.; Kulik L. V.; Baars T.; Bayer M.; Forchel A.
Localization of excitons in thermally annealed In0.14Ga0.86As/GaAs quantum wells studied by time-integrated four-wave mixing
317.
Bayer M.; Reinecke T. L.; Walck S. N.; Forchel A.
Exciton binding energies and diamagnetic shifts in semiconductor quantum wires and quantum dots
318.
Kazantsev D.; Guttroff G.; Bayer M.; Forchel A.
Sample temperature measurement in a scanning near-field optical microscope
319.
Wagner H. P.; Langbein W.; Hvam J. M.; Bacher G.; Kümmell T.; Forchel A.
Exciton dephasing in ZnSe quantum wires
320.
Kristensen A.; Sørensen C. B.; Zaffalon M.; Jensen J. Bo; Michel M.; Lindelof P. E.; Reimann S. M.; Forchel A.
Conductance quantization above 30 K in GaAlAs shallow-etched quantum point contacts smoothly joined to the background 2DEG
321.
Herz K.; Kümmell T.; Bacher G.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.
Biexciton formation in CdxZn1-x;Se/ZnSe quantum-dot and quantum-well structures
322.
Braun W.; Bayer M.; Forchel A.; Zull H.; Reithmaier J. P.; Filin A. I.; Reinecke T. L.
Enhanced exciton-phonon scattering in InxGa1-x;As/GaAs quantum wires
323.
Wang K. H.; Pecher A.; Höfling E.; Forchel A.
Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths
324.
Kümmell T.; Bacher G.; Forchel A.; Nürnberger J.; Faschinger W.; Landwehr G.; Jobst B.; Hommel D.
Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials
325.
Lermann G.; Bischof T.; Materny A.; Kiefer W.; Kümmell T.; Bacher G.; Forchel A.; Landwehr G.
Wire-width dependence of the LO-phonon splitting and photoluminescence energy in ZnSe/Cd0.35Zn0.65Se quantum wires
326.
Bacher G.; Hommel D.; Jobst B.; Forchel A.; Breitwieser O.; Kümmell T.; Spiegel R.; Landwehr G.
Relaxation of hot excitons in inhomogeneously broadened CdxZn1-x;Se/ZnSe nanostructures
327.
Eisert D.; Bacher G.; Legge M.; Forchel A.; Nürnberger J.; Schüll K.; Faschinger W.; Landwehr G.
Wavelength control in II–VI laser diodes with first order distributed Bragg reflectors
328.
Ohnesorge B.; Bayer M.; Forchel A.; Reithmaier J. P.; Gippius N. A.; Tikhodeev S. G.
Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities
329.
Röhner M.; Reithmaier J. P.; Forchel A.; Schäfer F.; Zull H.
Laser emission from photonic dots
330.
Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching
331.
Ahopelto J.; Sopanen M.; Lipsanen H.; Lourdudoss S.; Rodriguez Messmer E.; Höfling E.; Reithmaier J. P.; Forchel A.; Petersson A.; Samuelson L.
Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
332.
Bayer M.; Schlier Ch.; Gréus Ch.; Forchel A.; Benner S.; Haug H.
Many-body effects in the quasi-one-dimensional magnetoplasma
333.
Spiegel R.; Hommel D.; Jobst B.; Forchel A.; Bacher G.; Landwehr G.
Polarization-dependent formation of biexcitons in (Zn,Cd)Se/ZnSe quantum wells
334.
Braun W.; Bayer M.; Forchel A.; Zull H.; Reithmaier J. P.; Filin A. I.; Walck S. N.; Reinecke T. L.
Excitonic wave packets in In0.135Ga0.865As/GaAs quantum wires
335.
Paschke K.; Geue T.; Barberka T. A.; Bolm A.; Pietsch U.; Rösch M.; Batke E.; Faller F.; Kerkel K.; Oshinowo J.; Forchel A.
Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction
336.
Reithmaier J. P.; Höfling E.; Orth A.; Forchel A.
Focused ion beam technology: A new approach for the fabrication of optoelectronic devices
337.
Resonant micro-Raman investigations of the ZnSe–LO splitting in II–VI semiconductor quantum wires
338.
Michel M.; Forchel A.; Faller F.
Length quantization in In0.13Ga0.87As/GaAs quantum boxes with rectangular cross section
339.
Reithmaier J. P.; Röhner M.; Zull H.; Schäfer F.; Forchel A.; Knipp P. A.; Reinecke T. L.
Size Dependence of Confined Optical Modes in Photonic Quantum Dots
340.
Ohnesorge B.; Albrecht M.; Oshinowo J.; Forchel A.; Arakawa Y.
Rapid carrier relaxation in self‐assembled In;xGa1-;xAs/GaAs quantum dots
341.
Adler F.; Geiger M.; Bauknecht A.; Scholz F.; Schweizer H.; Pilkuhn M. H.; Ohnesorge B.; Forchel A.
Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
342.
Orth A.; Reithmaier J. P.; Zeh R.; Doleschel H.; Forchel A.
First order gain‐coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation
343.
Bayer M.; Timofeev V. B.; Faller F.; Gutbrod T.; Forchel A.
Direct and indirect excitons in coupled GaAs/Al0.30Ga0.70As double quantum wells separated by AlAs barriers
344.
Kulakovskii V. D.; Tyazhlov M. G.; Dite A. F.; Filin A. I.; Forchel A.; Yakovlev D. R.; Waag A.; Landwehr G.
Interparticle interaction in spin‐aligned and spin‐degenerate exciton systems and magnetoplasmas in II‐VI quantum wells
345.
Kulik L. V.; Kulakovskii V. D.; Bayer M.; Forchel A.; Gippius N. A.; Tikhodeev S. G.
Dielectric enhancement of excitons in near‐surface quantum wells
346.
Steffen R.; Forchel A.; Reinecke T. L.; Koch T.; Albrecht M.; Oshinowo J.; Faller F.
Single quantum dots as local probes of electronic properties of semiconductors
347.
Bayer M.; Reinecke T. L.; Schilling O.; Forchel A.; Knipp P. A.; Pagnod-Rossiaux Ph.; Goldstein L.
Splitting of electronic levels with positive and negative angular momenta in In0.53Ga0.47As/InP quantum dots by a magnetic field
348.
Wang K. H.; Bayer M.; Pagnod-Rossiaux Ph.; Haug H.; Benner S.; Ils P.; Forchel A.; Goldstein L.
Subband renormalization in dense electron‐hole plasmas in In;0.53Ga0.47As/InP quantum wires
349.
Bacher G.; Tönnies D.; Eisert D.; Forchel A.; Möller M. O.; Korn M.; Jobst B.; Hommel D.; Landwehr G.; Söllner J.; Heuken M.
Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs
350.
Spiegel R.; Bacher G.; Herz K.; Illing M.; Kümmell T.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.; Söllner J.; Heuken M.
Excitonic lifetimes in (Zn,Cd)Se/ZnSe and ZnSe/Zn(Se,S) quantum wires
351.
Bayer M.; Ils P.; Michel M.; Forchel A.; Reinecke T. L.; Knipp P. A.
Size dependence of the changeover from geometric to magnetic confinement in In0.53Ga0.47As/InP quantum wires
352.
Spiegel R.; Waag A.; Litz T.; Forchel A.; Herz K.; Bacher G.; Landwehr G.
Recombination and thermal emission of excitons in shallow CdTe/Cd1-;xMgxTe quantum wells
353.
Eisert D.; Bacher G.; Mais N.; Reithmaier J. P.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.
First order gain and index coupled distributed feedback lasers in ZnSe‐based structures with finely tunable emission wavelengths
354.
Steffen R.; Koch Th.; Oshinowo J.; Faller F.; Forchel A.
Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low‐voltage electron beam lithography
355.
Kieslich A.; Doleschel H.; Kieseling F.; Reithmaier J. P.; Forchel A.
Reduced lateral straggling of implantation induced defects in III/V heterostructures by ion implantation along channeling directions
356.
Kerkel K.; Oshinowo J.; Forchel A.; Weber J.; Zielinski E.
Lateral quantization effects in modulated barrier InGaAs/InP quantum wires
357.
Bayer M.; Knipp P. A.; Faller F.; Forchel A.; Kulakovskii V. D.; Dremin A. A.; Reinecke T. L.
Coupling of geometric confinement and magnetic confinement in In0.09Ga0.91As/GaAs quantum wells in magnetic fields with varying orientations
358.
Steffen R.; Oshinowo J.; Koch T.; Forchel A.
InGaAs/GaAs quantum wires and dots defined by low‐voltage electron‐beam lithography
359.
Illing M.; Bacher G.; Kümmell T.; Forchel A.; Hommel D.; Jobst B.; Landwehr G.
Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching
360.
Orth Andreas; Reithmaier Johann Peter; Faller Frank; Forchel Alfred
First‐order gain‐coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and ;insitu overgrowth
361.
Bayer M.; Timofeev V. B.; Gutbrod T.; Forchel A.; Steffen R.; Oshinowo J.
Enhancement of spin splitting due to spatial confinement in InxGa1-;xAs quantum dots
362.
Kieseling F.; Pagnod-Rossiaux Ph.; Reinecke T. L.; Knipp P. A.; Forchel A.; Wang K. H.; Braun W.; Goldstein L.
Barrier‐confinement‐controlled carrier transport into quantum wires
363.
Illing M.; Bacher G.; Forchel A.; Hommel D.; Jobst B.; Landwehr G.
First order distributed feedback operation in ZnSe based laser structures
364.
Illing M.; Bacher G.; Kümmell T.; Forchel A.; Andersson T. G.; Hommel D.; Jobst B.; Landwehr G.
Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires
365.
Hübner B.; Zengerle R.; Forchel A.
Low power electronic optical bistability in single quantum well InP/InGaAsP Fabry–Perot waveguide resonators
366.
Kieseling F.; Braun W.; Ils P.; Michel M.; Forchel A.; Gyuro I.; Klenk M.; Zielinski E.
Carrier lifetime in deep‐etched In;xGa1-;xAs/InP quantum wires
367.
Bayer M.; Schmidt A.; Forchel A.; Faller F.; Reinecke T. L.; Knipp P. A.; Dremin A. A.; Kulakovskii V. D.
Electron‐Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum Dots
368.
Illing M.; Bacher G.; Forchel A.; Litz T.; Waag A.; Landwehr G.
Photoluminescence efficiency study of wet chemically etched CdTe/Cd1-;xMgxTe wires
369.
Dreybrodt J.; Daiminger F.; Reithmaier J. P.; Forchel A.
Dynamics of carrier‐capture processes in Ga;xIn1-;xAs/GaAs near‐surface quantum wells
370.
Ils P.; Gréus Ch.; Forchel A.; Kulakovskii V. D.; Gippius N. A.; Tikhodeev S. G.
Linear polarization of photoluminescence emission and absorption in quantum‐well wire structures; Experiment and theory
371.
Tönnies D.; Bacher G.; Eisert D.; Forchel A.; Waag A.; Litz Th.; Landwehr G.
Ion‐implantation induced interdiffusion in CdTe/CdMgTe quantum wells
372.
Bayer M.; Dremin A.; Faller F.; Forchel A.; Kulakovskii V. D.; Shepel B. N.; Andersson T.
Renormalization effects in the dense neutral magnetoplasma of quantum wells with two filled subbands
373.
Dite A. F.; Kulakovskii V. D.; Faller F.; Forchel A.
Renormalization effects in the dense electron‐hole magnetoplasma of a strained In;xGa1-;xAs/GaAs single quantum well after picosecond excitation
374.
Kerkel K.; Oshinowo J.; Forchel A.; Weber J.; Laube G.; Gyuro I.; Zielinski E.
High‐resolution definition of buried InGaAs/InP wires by selective thermal intermixing
375.
Hübner B.; Jacobs B.; Gréus Ch.; Zengerle R.; Forchel A.
Luminescence spectroscopy of dry etched single dots and wires
376.
Steffen R.; Faller F.; Forchel A.
Low‐voltage electron beam lithography on GaAs substrates for quantum wire fabrication
377.
Kieslich A.; Reithmaier J. P.; Forchel A.
Minimum feature sizes and ion beam profile for a focused ion beam system with post‐objective lens retarding and acceleration mode
378.
Ils P.; Forchel A.; Wang K. H.; Pagnod-Rossiaux Ph.; Goldstein L.
Lateral subband transitions in the luminescence spectra of a one‐dimensional electron‐hole plasma in In;0.53Ga0.47As/InP quantum wires
379.
Kulakovskii V. D.; Forchel A.; Pieger K.; Straka J.; Shepel B. N.; Nochevny S. V.
Exciton mixing in the magnetophotoluminescence excitation spectra of shallow strained InxGa1-;xAs/GaAs quantum wells
380.
Daiminger F.; Dite A. F.; Tourníe E.; Ploog K.; Forchel A.
Time‐resolved investigations of excitonic recombination in highly strained InAs/Al;0.48In0.52As quantum wells
381.
Orth A.; Reithmaier J. P.; Forchel A.; Nötzel R.; Ploog K.
Room‐temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311);A‐oriented substrates
382.
Bayer M.; Spiegel R.; Gréus Ch.; Knipp P. A.; Reinecke T. L.; Itskevich I. E.; Forchel A.; Faller F.
Magnetic‐field‐induced breakdown of quasi‐one‐dimensional quantum‐wire quantization
383.
Waag A.; Bacher G.; Jakobs A.; Forchel A.; Landwehr G.
Stimulated emission from a (CdMg)Te separate confinement quantum well laser
384.
Gréus Ch.; Faller F.; Reinecke T. L.; Knipp P. A.; Spiegel R.; Forchel A.
Photoluminescence excitation study of lateral‐subband structure in barrier‐modulated In;0.09Ga0.91As quantum wires
385.
Tönnies D.; Bacher G.; Forchel A.; Waag A.; Landwehr G.
Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing
386.
Ils P.; Michel M.; Forchel A.; Gyuro I.; Klenk M.; Zielinski E.
Room temperature study of strong lateral quantization effects in InGaAs/InP quantum wires
387.
Butov L. V.; Kulakovskii V. D.; Forchel A.
Spin‐splitting renormalization in the neutral dense magnetoplasma in In;xGa1-;xAs/InP quantum wells
388.
Dreybrodt J.; Forchel A.; Reithmaier J. P.
Optical properties of Ga0.8In0.2As/GaAs surface quantum wells
389.
Fabrication and optical properties of InGaAs/InP quantum wires and dots with strong lateral quantization effects
390.
Schilling O.; Forchel A.; Kohl A.; Brittner S.
Optical analysis of quantum confined Stark effect in overgrown InGaAs/InP quantum wires
391.
Kieslich A.; Doleschel H.; Faller F.; Forchel A.; Stoffel N. G.
Investigation of the longitudinal and lateral distribution of implantation induced damage in GaAs/InGaAs heterostructures
392.
Oshinowo J.; Dreybrodt J.; Forchel A.; Mestres N.; Calleja J. M.; Gyuro I.; Speier P.; Zielinski E.
Photoluminescence study of implantation‐induced intermixing of In;0.53Ga0.47As/InP single quantum wells by argon ions
393.
Hämisch Y.; Steffen R.; Forchel A.; Röntgen P.
Rapid thermal annealing induced order‐disorder transition in Ga;0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures
394.
Gréus Ch.; Butov L.; Daiminger F.; Forchel A.; Knipp P. A.; Reinecke T. L.
Lateral quantization in the optical emission of barrier‐modulated wires
395.
Hillmer H.; Forchel A.; Hansmann S.; Morohashi M.; Lopez E.; Meier H. P.; Ploog K.
Erratum: Optical investigations on the mobility of two‐dimensional excitons in GaAs/Ga;1-;xAlxAs quantum wells [Phys. Rev. B ;39, 10 901 (1989)]
396.
Prins F. E.; Lehr G.; Fröhlich E. M.; Mayer G.; Schweizer H.; Straka J.; Forchel A.; Smith G. W.
Carrier transport into intermixed GaAs/AlGaAs quantum wires
397.
Bickl T.; Jacobs B.; Straka J.; Forchel A.
Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells
398.
Mayer G.; Prins F. E.; Lehr G.; Schweizer H.; Leier H.; Maile B. E.; Straka J.; Forchel A.; Weimann G.
Carrier relaxation in intermixed GaAs/AlxGa1-;xAs quantum wires
399.
Kieslich A.; Straka J.; Forchel A.
Optical study of Ar+ implantation‐induced damage in GaAs/GaAlAs heterostructures
400.
Butov L. V.; Kulakovskii V. D.; Bauer G. E. W.; Forchel A.; Grützmacher D.
Excitons in dense two‐dimensional electron‐hole magnetoplasmas
401.
Schmidt A.; Forchel A.; Straka J.; Gyuro I.; Speier P.; Zielinski E.
Investigation of high‐quantum efficiency InGaAs/InP and InGaAs/GaAs quantum dots
402.
Hämisch Y.; Steffen R.; Oshinowo J.; Forchel A.; Röntgen P.
Selective order–disorder transition in GaInP/AlGaInP; A new approach for the definition of buried quantum wires
403.
Gréus Ch.; Forchel A.; Straka J.; Pieger K.; Emmerling M.
InGaAs/GaAs quantum wires defined by lateral top barrier modulation
404.
Oshinowo J.; Forchel A.; Grützmacher D.; Stollenwerk M.; Heuken M.; Heime K.
Photoluminescence study of interdiffusion in In0.53Ga0.47As/InP surface quantum wells
405.
Hillmer H.; Hansmann S.; Forchel A.
Comment on ‘‘Radiative recombination processes of the many‐body states in multiple quantum wells’’
406.
Hillmer H.; Forchel A.; Tu C. W.
Enhancement of electron‐hole pair mobilities in thin GaAs/Al;xGa1-;xAs quantum wells
407.
Butov L. V.; Forchel A.; Lach E.; Kulakovskii V. D.; Grützmacher D.
Magnetoluminescence study of many‐body effects in homogeneous quasi‐two‐dimensional electron‐hole plasma in undoped In;xGa1-;xAs/InP single quantum wells
408.
High quantum efficiency InGaAs/GaAs quantum wires defined by selective wet etching
409.
Hillmer H.; Forchel A.; Kuhn T.; Mahler G.; Meier H. P.
Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al0.5Ga0.5As double‐quantum‐well heterostructures
410.
Bacher G.; Schweizer H.; Kovac J.; Forchel A.; Nickel H.; Schlapp W.; Lösch R.
Influence of barrier height on carrier dynamics in strained InxGa1-;xAs/GaAs quantum wells
411.
Lambsdorff M.; Klingenstein M.; Kuhl J.; Moglestue C.; Rosenzweig J.; Axmann A.; Schneider Jo.; Hülsmann A.; Leier H.; Forchel A.
Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes
412.
Forchel A.; Menschig A.; Maile B. E.; Leier H.; Germann R.
Transport and optical properties of semiconductor quantum wires
413.
Rosenzweig Josef; Moglestue C.; Axmann A.; Schneider Joachim; Huelsmann Axel; Lambsdorff M.; Kuhl Juergen; Klingenstein Markus; Leier H.; Forchel Alfred W. B.
Characterization of picosecond GaAs metal-semiconductor-metal photodetectors
414.
Korn M.; Forchel A.; Körfer T.; Roentgen P.
First order distributed feedback gratings (92.5–105 nm period) for GaInP/AlGaInP lasers emitting in the visible range
415.
Menschig A.; Roos B.; Germann R.; Forchel A.; Pressel K.; Heuring W.; Grützmacher D.
In0.53Ga0.47As/InP quantum wires: Fabrication and magnetotransport studies
416.
Menschig A.; Forchel A.; Roos B.; Germann R.; Pressel K.; Heuring W.; Grützmacher D.
Magnetotransport in narrow In0.53Ga0.47As/InP wires
417.
Lach E.; Forchel A.; Broido D. A.; Reinecke T. L.; Weimann G.; Schlapp W.
Room‐temperature emission of highly excited GaAs/Ga;1-;xAlxAs quantum wells
418.
Maile B. E.; Forchel A.; Germann R.; Straka J.; Korte L.; Thanner C.
Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires
419.
Hillmer H.; Sauer R.; Forchel A.; Tu C. W.
Interface‐roughness‐controlled exciton mobilities in GaAs/ Al;0.37Ga0.63As quantum wells
420.
Maile B. E.; Meier H. P.; Grützmacher D.; Germann R.; Forchel A.; Reithmaier J.-P.
Erratum: Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content [J. Vac. Sci. Technol. B ;7, 2030 (1989)]
421.
Mayer G.; Maile B. E.; Germann R.; Forchel A.; Grambow P.; Meier H. P.
Time‐resolved investigations of sidewall recombination in dry‐etched GaAs wires
422.
Clauss W.; Rau U.; Parisi J.; Peinke J.; Huebener R. P.; Leier H.; Forchel A.
Impact ionization avalanche breakdown in short crystal regions of p‐Ge
423.
Leier H.; Forchel A.; Hörcher G.; Hommel J.; Bayer S.; Rothfritz H.; Weimann G.; Schlapp W.
Mass and dose dependence of ion‐implantation‐induced intermixing of GaAs/GaAlAs quantum‐well structures
424.
Leier H.; Forchel A.; Maile B. E.; Mayer G.; Hommel J.; Weimann G.; Schlapp W.
Carrier capture in intermixed quantum wires with sharp lateral confinement
425.
Germann R.; Forchel A.; Grützmacher D.
Optical depth profiling of ion beam etching induced damage in InGaAs/InP heterostructures
426.
Cebulla U.; Forchel A.; Bacher G.; Grützmacher D.; Tsang W. T.; Razeghi M.
Barrier‐controlled thermalization in In;0.53Ga0.47As/InP quantum wells
427.
Korn M.; Klingenstein M.; Germann R.; Forchel A.; Nickel H.; Schlapp W.; Lösch R.; Streubel K.; Scholz F.
High‐resolution electron beam lithography and evaluation of first‐order distributed feedback lasers
428.
Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content
429.
Germann R.; Forchel A.; Bresch M.; Meier H. P.
Energy dependence and depth distribution of dry etching‐induced damage in III/V semiconductor heterostructures
430.
Kulakovskii V. D.; Lach E.; Forchel A.; Grützmacher D.
Band‐gap renormalization and band‐filling effects in a homogeneous electron‐hole plasma in In;0.53Ga0.47As/InP single quantum wells
431.
Cebulla U.; Bacher G.; Forchel A.; Schmitz D.; Jürgensen H.; Razeghi M.
Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells
432.
Capizzi M.; Coluzza C.; Frova A.; Cebulla U.; Forchel A.
Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time‐resolved luminescence
433.
Optical investigations on the mobility of two‐dimensional excitons in GaAs/Ga;1-;xAlxAs quantum wells
434.
Maile B. E.; Forchel A.; Germann R.; Grützmacher D.
Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires
435.
Cebulla U.; Bacher G.; Forchel A.; Mayer G.; Tsang W. T.
Excitonic lifetimes in thin InxGa1-;xAs/InP quantum wells
436.
Weber J.; Molassioti A.; Moser M.; Stapor A.; Scholz F.; Hörcher G.; Forchel A.; Hammel A.; Laube G.; Weidlein J.
InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(MeCp)3
437.
Hillmer H.; Hansmann S.; Forchel A.; Morohashi M.; Lopez E.; Meier H. P.; Ploog K.
Two‐dimensional exciton transport in GaAs/GaAlAs quantum wells
438.
Maile B. E.; Forchel A.; Germann R.; Menschig A.; Meier H. P.; Grützmacher D.
Nanometer lithography for III–V semiconductor wires using chloromethylated poly‐α‐methylstyrene resist
439.
Cebulla U.; Tränkle G.; Ziem U.; Forchel A.; Griffiths G.; Kroemer H.; Subbanna S.
Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple‐quantum‐well structures
440.
Tränkle G.; Lach E.; Forchel A.; Scholz F.; Ell C.; Haug H.; Weimann G.; Griffiths G.; Kroemer H.; Subbanna S.
General relation between band‐gap renormalization and carrier density in two‐dimensional electron‐hole plasmas
441.
Laurich B.; Hillmer H.; Forchel A.
Optical time‐of‐flight investigation of the exciton transport in silicon
442.
Tränkle G.; Leier H.; Forchel A.; Haug H.; Ell C.; Weimann G.
Dimensionality dependence of the band‐gap renormalization in two‐ and three‐dimensional electron‐hole plasmas in GaAs
443.
Forchel A.; Cebulla U.; Tränkle G.; Ziem U.; Kroemer H.; Subbanna S.; Griffiths G.
E0+Δ;0 transitions in GaSb/AlSb quantum wells
444.
Forchel A.; Subbanna S.; Kroemer H.; Reinecke T. L.; Lach E.; Tränkle G.; Cebulla U.; Griffiths G.
2Eg transitions in GaSb‐AlSb quantum‐well structures
445.
Hillmer H.; Mayer G.; Forchel A.; Löchner K. S.; Bauser E.
Optical time‐of‐flight investigation of ambipolar carrier transport in GaAlAs using GaAs/GaAlAs double quantum well structures
446.
Scholz F.; Wiedemann P.; Benz K. W.; Tränkle G.; Lach E.; Forchel A.; Laube G.; Weidlein J.
GaInAs‐InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts
447.
Steranka F. M.; Forchel A.; Gourley P. L.; Wolfe J. P.; Reinecke T. L.
Properties of electron‐hole liquid in highly stressed silicon
448.
Schweizer H.; Löwenau J. P.; Schmitt-Rink S.; Hangleiter A.; Forchel A.; Haug H.
Ionization of the direct‐gap exciton in photoexcited germanium
449.
Forchel A.; Schweizer H.; Mahler G.
Optical properties of fast‐diffusing solid‐state plasmas
450.
Mahler G.; Forchel A.; Laurich B.; Schmid W.
Erratum: Mahler et al respond [Phys. Rev. Lett. ;49, 1744 (1982)]
451.
Mahler et al. respond
452.
453.
Forchel A.; Laurich B.; Wagner J.; Schmid W.; Reinecke T. L.
Systematics of electron‐hole liquid condensation from studies of silicon with varying uniaxial stress
454.
Mahler G.; Maier G.; Forchel A.; Laurich B.; Sanwald H.; Schmid W.
Thermodiffusion of high‐density electron‐hole plasmas in semiconductors
455.
Forchel A.; Laurich B.; Moersch G.; Schmid W.; Reinecke T. L.
Experimental verification of scaling relations for electron‐hole liquid condensation
87
Reithmaier, Johann Peter
72
Höfling, Sven
65
Worschech, Lukas
64
Bacher, G
62
Kamp, Martin
61
Bayer, Manfred
50
Reitzenstein, Stephan
39
Reinecke, Thomas L.
35
Kulakovskii, VD
28
Landwehr, G
27
Misiewicz, Jan
Löffler, Andreas
23
Hommel, Detlef
22
Schneider, C
Kümmell, T