Forchel, Alfred

Lermer M.; Gregersen N.; Dunzer F.; Reitzenstein S.; Höfling S.; Mørk J.; Worschech L.; Kamp M.; Forchel A.

Bloch-Wave Engineering of Quantum Dot Micropillars for Cavity Quantum Electrodynamics Experiments

Munsch M.; Claudon J.; Malik N. S.; Gilbert K.; Grosse P.; Gérard J.-M.; Albert F.; Langer F.; Schlereth T.; Pieczarka M. M.; Höfling S.; Kamp M.; Forchel A.; Reitzenstein S.

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes

Musiał A.; Kaczmarkiewicz P.; Sęk G.; Podemski P.; Machnikowski P.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.

Carrier trapping and luminescence polarization in quantum dashes

Lermer M.; Gregersen N.; Dunzer F.; Reitzenstein S.; Höfling S.; Mørk J.; Worschech L.; Kamp M.; Forchel A.

Bloch-Wave Engineering of Quantum Dot Micropillars for Cavity Quantum Electrodynamics Experiments

Munsch M.; Claudon J.; Malik N. S.; Gilbert K.; Grosse P.; Gérard J.-M.; Albert F.; Langer F.; Schlereth T.; Pieczarka M. M.; Höfling S.; Kamp M.; Forchel A.; Reitzenstein S.

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes

Musiał A.; Kaczmarkiewicz P.; Sęk G.; Podemski P.; Machnikowski P.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.

Carrier trapping and luminescence polarization in quantum dashes

Ugur Asli; Kremling Stefan; Hatami Fariba; Höfling Sven; Worschech Lukas; Forchel Alfred; Ted Masselink W.

Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots

Syperek M.; Musiał A.; Se☒k G.; Podemski P.; Misiewicz J.; Löffler A.; Höfling S.; Worschech L.; Forchel A.

Impact of the localized wetting layer states on carrier relaxation processes in GaAs‐based quantum dash structures

Brichkin A. S.; Novikov S. I.; Larionov A. V.; Kulakovskii V. D.; Glazov M. M.; Schneider C.; Höfling S.; Kamp M.; Forchel A.

Effect of Coulomb interaction on exciton-polariton condensates in GaAs pillar microcavities

Rahimi-Iman A.; Schneider C.; Fischer J.; Holzinger S.; Amthor M.; Höfling S.; Reitzenstein S.; Worschech L.; Kamp M.; Forchel A.

Zeeman splitting and diamagnetic shift of spatially confined quantum-well exciton polaritons in an external magnetic field

Fuchs Peter; Semmel Julia; Friedl Jochen; Höfling Sven; Koeth Johannes; Worschech Lukas; Forchel Alfred

Erratum: “Distributed feedback quantum cascade lasers at 13.8 µm on indium phosphide” [Appl. Phys. Lett. 98, 211118 (2011)]

Young A. B.; Oulton R.; Hu C. Y.; Thijssen A. C. T.; Schneider C.; Reitzenstein S.; Kamp M.; Höfling S.; Worschech L.; Forchel A.; Rarity J. G.

Quantum-dot-induced phase shift in a pillar microcavity

Ulrich S. M.; Ates S.; Reitzenstein S.; Löffler A.; Forchel A.; Michler P.

Dephasing of Triplet-Sideband Optical Emission of a Resonantly Driven InAs/GaAs Quantum Dot inside a Microcavity

Hartmann F.; Gammaitoni L.; Höfling S.; Forchel A.; Worschech L.

Light-induced stochastic resonance in a nanoscale resonant-tunneling diode

Madsen K. H.; Ates S.; Lund-Hansen T.; Löffler A.; Reitzenstein S.; Forchel A.; Lodahl P.

Observation of Non-Markovian Dynamics of a Single Quantum Dot in a Micropillar Cavity

Tempel Jean-Sebastian; Akimov Ilya A.; Aßmann Marc; Schneider Christian; Höfling Sven; Kistner Caroline; Reitzenstein Stephan; Worschech Lukas; Forchel Alfred; Bayer Manfred

Extrapolation of the intensity autocorrelation function of a quantum-dot micropillar laser into the thermal emission regime

Fuchs Peter; Semmel Julia; Friedl Jochen; Höfling Sven; Koeth Johannes; Worschech Lukas; Forchel Alfred

Distributed feedback quantum cascade lasers at 13.8 μm on indium phosphide

Beetz J.; Kistner C.; Lermer M.; Schneider C.; Reitzenstein S.; Höfling S.; Kamp M.; Forchel A.

In-plane manipulation of quantum dots in high quality laterally contacted micropillar cavities

Huggenberger A.; Heckelmann S.; Schneider C.; Höfling S.; Reitzenstein S.; Worschech L.; Kamp M.; Forchel A.

Narrow spectral linewidth from single site-controlled In(Ga)As quantum dots with high uniformity

Hartmann F.; Forchel A.; Neri I.; Gammaitoni L.; Worschech L.

Nanowatt logic stochastic resonance in branched resonant tunneling diodes

Larionov A. V.; Kulakovskii V. D.; Höfling S.; Schneider C.; Worschech L.; Forchel A.

Polarized Nonequilibrium Bose-Einstein Condensates of Spinor Exciton Polaritons in a Magnetic Field

Stobbe S.; Schlereth T. W.; Höfling S.; Forchel A.; Hvam J. M.; Lodahl P.

Large quantum dots with small oscillator strength

Reitzenstein S.; Böckler C.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Yao P.; Hughes S.

Polarization-dependent strong coupling in elliptical high-Q micropillar cavities

Göpfert S.; Worschech L.; Lingemann S.; Schneider C.; Press D.; Höfling S.; Forchel A.

Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots

Weiler S.; Ulhaq A.; Ulrich S. M.; Reitzenstein S.; Löffler A.; Forchel A.; Michler P.

Emission characteristics of a highly correlated system of a quantum dot coupled to two distinct micropillar cavity modes

Margapoti E.; Alves Fabrizio M.; Mahapatra S.; Schmidt T.; Lopez-Richard V.; Destefani C.; Menéndez-Proupin E.; Qu Fanyao; Bougerol C.; Brunner K.; Forchel A.; Marques G. E.; Worschech L.

Characterization of spin-state tuning in thermally annealed semiconductor quantum dots

Bauer Adam; Dallner Matthias; Kamp Martin; Höfling Sven; Worschech Lukas; Forchel Alfred

Shortened injector interband cascade lasers for 3.3- to 3.6-μm emission

Fuchs Peter; Seufert Jochen; Koeth Johannes; Semmel Julia; Höfling Sven; Worschech Lukas; Forchel Alfred

Widely tunable quantum cascade lasers with coupled cavities for gas detection

Kudrawiec R.; Sęk G.; Motyka M.; Misiewicz J.; Somers A.; Höfling S.; Worschech L.; Forchel A.

Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

Reitzenstein S.; Münch S.; Franeck P.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Ponomarev I. V.; Reinecke T. L.

Exciton spin state mediated photon-photon coupling in a strongly coupled quantum dot microcavity system

Albert F.; Braun T.; Heindel T.; Schneider C.; Reitzenstein S.; Höfling S.; Worschech L.; Forchel A.

Whispering gallery mode lasing in electrically driven quantum dot micropillars

Ladd Thaddeus D.; Press David; De Greve Kristiaan; McMahon Peter L.; Friess Benedikt; Schneider Christian; Kamp Martin; Höfling Sven; Forchel Alfred; Yamamoto Yoshihisa

Pulsed Nuclear Pumping and Spin Diffusion in a Single Charged Quantum Dot

Ulhaq A.; Ates S.; Weiler S.; Ulrich S. M.; Reitzenstein S.; Löffler A.; Höfling S.; Worschech L.; Forchel A.; Michler P.

Linewidth broadening and emission saturation of a resonantly excited quantum dot monitored via an off-resonant cavity mode

Kistner C.; Morgener K.; Reitzenstein S.; Schneider C.; Höfling S.; Worschech L.; Forchel A.; Yao P.; Hughes S.

Strong coupling in a quantum dot micropillar system under electrical current injection

Heinrich J.; Huggenberger A.; Heindel T.; Reitzenstein S.; Höfling S.; Worschech L.; Forchel A.

Single photon emission from positioned GaAs/AlGaAs photonic nanowires

Sęk G.; Musiał A.; Podemski P.; Syperek M.; Misiewicz J.; Löffler A.; Höfling S.; Worschech L.; Forchel A.

Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

Hartmann F.; Hartmann D.; Kowalzik P.; Forchel A.; Gammaitoni L.; Worschech L.

Stochastic resonance in a nanoscale Y-branch switch

Reitzenstein S.; Worschech L.; Hartmann D.; Forchel A.

Intrinsic feedback and bistable switching in Y-branched nanojunctions

Aßmann Marc; Veit Franziska; Bayer Manfred; Gies Christopher; Jahnke Frank; Reitzenstein Stephan; Höfling Sven; Worschech Lukas; Forchel Alfred

Ultrafast tracking of second-order photon correlations in the emission of quantum-dot microresonator lasers

Albert F.; Stobbe S.; Schneider C.; Heindel T.; Reitzenstein S.; Höfling S.; Lodahl P.; Worschech L.; Forchel A.

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

Roumpos Georgios; Nitsche Wolfgang H.; Höfling Sven; Forchel Alfred; Yamamoto Yoshihisa

Gain-Induced Trapping of Microcavity Exciton Polariton Condensates

Hartmann F.; Hartmann D.; Kowalzik P.; Gammaitoni L.; Forchel A.; Worschech L.

Magnetic-field-controlled noise-activated switching in a nonlinear three-terminal nanojunction

Jaffrennou P.; Claudon J.; Bazin M.; Malik N. S.; Reitzenstein S.; Worschech L.; Kamp M.; Forchel A.; Gérard J.-M.

Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities

Syperek M.; Kudrawiec R.; Baranowski M.; Sȩk G.; Misiewicz J.; Bisping D.; Marquardt B.; Forchel A.; Fischer M.

Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Yao Peijun; Pathak P. K.; Illes E.; Hughes S.; Münch S.; Reitzenstein S.; Franeck P.; Löffler A.; Heindel T.; Höfling S.; Worschech L.; Forchel A.

Nonlinear photoluminescence spectra from a quantum-dot–cavity system: Interplay of pump-induced stimulated emission and anharmonic cavity QED

Horikiri Tomoyuki; Schwendimann Paolo; Quattropani Antonio; Höfling Sven; Forchel Alfred; Yamamoto Yoshihisa

Higher order coherence of exciton-polariton condensates

Heindel T.; Schneider C.; Lermer M.; Kwon S. H.; Braun T.; Reitzenstein S.; Höfling S.; Kamp M.; Forchel A.

Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency

Bauer A.; Langer F.; Dallner M.; Kamp M.; Motyka M.; Sęk G.; Ryczko K.; Misiewicz J.; Höfling S.; Forchel A.

Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range

Spanheimer D.; Müller C. R.; Heinrich J.; Höfling S.; Worschech L.; Forchel A.

Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

Müller C. R.; Stopa M.; Lang S.; Worschech L.; Forchel A.

Quantized rectification in a quantum dot nanojunction

Brandenstein-Köth Bettina; Worschech Lukas; Forchel Alfred

Magnetic-field asymmetry of nonlinear transport in narrow channels with asymmetric hybrid confinement

Münch S.; Reitzenstein S.; Franeck P.; Löffler A.; Heindel T.; Höfling S.; Worschech L.; Forchel A.

The role of optical excitation power on the emission spectra of a strongly coupled quantum dot-micropillar system

S\{e}k Grzegorz; Podemski Pawe$ŀ$; Andrzejewski Janusz; Misiewicz Jan; Hein Sebastian; Höfling Sven; Forchel Alfred

Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 μm

Motyka M.; Sęk G.; Ryczko K.; Misiewicz J.; Lehnhardt T.; Höfling S.; Forchel A.

Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

Quast J.-H.; Astakhov G. V.; Ossau W.; Molenkamp L. W.; Heinrich J.; Höfling S.; Forchel A.

Influence of light on spin diffusion in weak magnetic fields

Hein S.; Podemski P.; Sęk G.; Misiewicz J.; Ridha P.; Fiore A.; Patriarche G.; Höfling S.; Forchel A.

Orientation dependent emission properties of columnar quantum dash laser structures

Kistner C.; Reitzenstein S.; Schneider C.; Höfling S.; Forchel A.

Resonantly probing micropillar cavity modes by photocurrent spectroscopy

Müller C. R.; Worschech L.; Forchel A.

Inversion of hysteresis in quantum dot controlled quantum-wire transistor

Sęk G.; Podemski P.; Musiał A.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.

Exciton and biexciton emission from a single InAs/InP quantum dash

Schneider C.; Heindel T.; Huggenberger A.; Weinmann P.; Kistner C.; Kamp M.; Reitzenstein S.; Höfling S.; Forchel A.

Single photon emission from a site-controlled quantum dot-micropillar cavity system

Sęk G.; Podemski P.; Misiewicz J.; Reitzenstein S.; Reithmaier J. P.; Forchel A.

Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots

Reitzenstein S.; Gregersen N.; Kistner C.; Strauss M.; Schneider C.; Pan L.; Nielsen T. R.; Höfling S.; Mørk J.; Forchel A.

Oscillatory variations in the Q factors of high quality micropillar cavities

LeClech Julien; Ziegler Mathias; Mukherjee Jayanta; Tomm Jens W.; Elsaesser Thomas; Landesman Jean-Pierre; Corbett Brian; Mclnerney John G.; Reithmaier Johann Peter; Deubert Stefan; Forchel Alfred; Nakwaski Włodzimierz; Sarzała Robert P.

Microthermography of diode lasers: The impact of light propagation on image formation

Semmel Julia; Kaiser Wolfgang; Hofmann Holger; Höfling Sven; Forchel Alfred

Single mode emitting ridge waveguide quantum cascade lasers coupled to an active ring resonator filter

Worschech L.; Hartmann D.; Forchel A.

Dynamic-gate operation in nanoelectronic amplifiers due to reduced screening

Capua A.; O'duill S.; Mikhelashvili V.; Eisenstein G.; Reithmaier J. P.; Somers A.; Forchel A.

Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier

Podemski P.; Sęk G.; Ryczko K.; Misiewicz J.; Hein S.; Höfling S.; Forchel A.; Patriarche G.

Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 μ;m

Ates S.; Gies C.; Ulrich S. M.; Wiersig J.; Reitzenstein S.; Löffler A.; Forchel A.; Jahnke F.; Michler P.

Influence of the spontaneous optical emission factor β; on the first-order coherence of a semiconductor microcavity laser

Renner Johannes; Worschech Lukas; Forchel Alfred; Mahapatra Suddhasatta; Brunner Karl

Glass supported ZnSe microring strongly coupled to a single CdSe quantum dot

Hartmann D.; Worschech L.; Forchel A.

Tunable magnetic-field asymmetry of nonlinear mesoscopic transport: Field-effect controlled backscattering in a quantum wire

Kistner C.; Heindel T.; Schneider C.; Rahimi-Iman A.; Reitzenstein S.; Höfling S.; Forchel A.

Demonstration of strong coupling via electro-optical tuning in high-quality QD-micropillar systems

Lund-Hansen T.; Stobbe S.; Julsgaard B.; Thyrrestrup H.; Sünner T.; Kamp M.; Forchel A.; Lodahl P.

Experimental Realization of Highly Efficient Broadband Coupling of Single Quantum Dots to a Photonic Crystal Waveguide

Julsgaard B.; Johansen J.; Stobbe S.; Stolberg-Rohr T.; Sünner T.; Kamp M.; Forchel A.; Lodahl P.

Decay dynamics of quantum dots influenced by the local density of optical states of two-dimensional photonic crystal membranes

Müller M.; Lehnhardt T.; Rößner K.; Forchel A.

Tunable lasers on GaSb using the concept of binary superimposed gratings

Müller C. R.; Worschech L.; Heinrich J.; Höfling S.; Forchel A.

Room temperature memory operation of a single InAs quantum dot layer in a GaAs/;AlGaAs heterostructure

Reitzenstein S.; Heindel T.; Kistner C.; Rahimi-Iman A.; Schneider C.; Höfling S.; Forchel A.

Low threshold electrically pumped quantum dot-micropillar lasers

Kwon Soon-Hong; Sünner Thomas; Kamp Martin; Forchel Alfred

Optimization of photonic crystal cavity for chemical sensing

Sünner Thomas; Schneider Christian; Strauß Micha; Huggenberger Alexander; Wiener Daniel; Höfling Sven; Kamp Martin; Forchel Alfred

Scalable fabrication of optical resonators with embedded site-controlled quantum dots

Sünner T.; Stichel T.; Kwon S.-H.; Schlereth T. W.; Höfling S.; Kamp M.; Forchel A.

Photonic crystal cavity based gas sensor

Crankshaw S.; Reitzenstein S.; Chuang L. C.; Moewe M.; Münch S.; Böckler C.; Forchel A.; Chang-Hasnain C.

Recombination dynamics in wurtzite InP nanowires

Bacher G.; Welsch M. K.; Forchel A.; Lyanda-Geller Y.; Reinecke T. L.; Becker C. R.; Molenkamp L. W.

Tunable quantum coupling in a II-VI quantum dot molecule

Motyka M.; Kudrawiec R.; Misiewicz J.; Hümmer M.; Rößner K.; Lehnhardt T.; Müller M.; Forchel A.

Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence

Lehnhardt T.; Hümmer M.; Rößner K.; Müller M.; Höfling S.; Forchel A.

Continuous wave single mode operation of GaInAsSb/;GaSb quantum well lasers emitting beyond 3 μ;m

Schneider C.; Strauß M.; Sünner T.; Huggenberger A.; Wiener D.; Reitzenstein S.; Kamp M.; Höfling S.; Forchel A.

Lithographic alignment to site-controlled quantum dots for device integration

Gerschütz F.; Fischer M.; Koeth J.; Krestnikov I.; Kovsh A.; Schilling C.; Kaiser W.; Höfling S.; Forchel A.

1.3 μm Quantum Dot Laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation

Heinrich J.; Langhans R.; Vitiello M. S.; Scamarcio G.; Indjin D.; Evans C. A.; Ikonić Z.; Harrison P.; Höfling S.; Forchel A.

Wide wavelength tuning of GaAs/;AlxGa1-x;As bound-to-continuum quantum cascade lasers by aluminum content control

Reitzenstein S.; Böckler C.; Bazhenov A.; Gorbunov A.; Löffler A.; Kamp M.; Kulakovskii V. D.; Forchel A.

Single quantum dot controlled lasing effects in high-Q micropillar cavities

Kwon Soon-Hong; Sünner Thomas; Kamp Martin; Forchel Alfred

Ultrahigh-Q photonic crystal cavity created by modulating air hole radius of a waveguide

Böckler C.; Reitzenstein S.; Kistner C.; Debusmann R.; Löffler A.; Kida T.; Höfling S.; Forchel A.; Grenouillet L.; Claudon J.; Gérard J. M.

Electrically driven high-Q quantum dot-micropillar cavities

Margapoti E.; Worschech L.; Mahapatra S.; Brunner K.; Forchel A.; Alves Fabrizio M.; Lopez-Richard V.; Marques G. E.; Bougerol C.

Negative magnetopolarization in thermally annealed self-assembled quantum dots

Lang S.; Worschech L.; Emmerling M.; Strauß M.; Höfling S.; Forchel A.

Selective etching of independent contacts in a double quantum-well structure: Quantum-gate transistor

Capua A.; Mikhelashvili V.; Eisenstein G.; Reithmaier J. P.; Somers A.; Forchel A.; Calligaro M.; Parillaud O.; Krakowski M.

Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm

Kudrawiec R.; Motyka M.; Misiewicz J.; Hümmer M.; Rößner K.; Lehnhardt T.; Müller M.; Forchel A.

Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92/;GaSb single quantum wells of various widths

Nähle Lars; Semmel Julia; Kaiser Wolfgang; Höfling Sven; Forchel Alfred

Erratum: “Tapered quantum cascade lasers” [Appl. Phys. Lett.; 91, 181122 (2007)]

Hein S.; von Hinten V.; Höfling S.; Forchel A.

The impact of p-doping on the static and dynamic properties of 1.5 μ;m quantum dash lasers on InP

Nowicki-Bringuier Y.-R.; Claudon J.; Böckler C.; Reitzenstein S.; Kamp M.; Morand A.; Forchel A.; Gérard J. M.

High Q whispering gallery modes in GaAs/AlAs pillar microcavities

Mujumdar S.; Koenderink A. F.; Sünner T.; Buchler B. C.; Kamp M.; Forchel A.; Sandoghdar V.

Near-field imaging and frequency tuning of a high-Q photonic crystal membrane microcavity

Schuller Ch.; Höfling S.; Forchel A.; Etrich C.; Pertsch T.; Iliew R.; Lederer F.; Reithmaier J. P.

Highly efficient and compact photonic wire splitters on GaAs

Bisping D.; Schneider S.; Höfling S.; Habermann S.; Fischer M.; Koeth J.; Forchel A.

1240nm high-power GaInNAs laser diodes

Mueller M.; Bauer A.; Lehnhardt T.; Rössner K.; Hümmer M.; Forchel A.

One dimensional and two dimensional photonic crystal GaInSb/;AlGaAsSb microlasers

Nähle Lars; Semmel Julia; Kaiser Wolfgang; Höfling Sven; Forchel Alfred

Tapered quantum cascade lasers

Reitzenstein S.; Münch S.; Hofmann C.; Forchel A.; Crankshaw S.; Chuang L. C.; Moewe M.; Chang-Hasnain C.

Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition

Semmel J.; Nähle L.; Höfling S.; Forchel A.

Edge emitting quantum cascade microlasers on InP with deeply etched one-dimensional photonic crystals

Kaiser W.; Reithmaier J. P.; Forchel A.; Odriozola H.; Esquivias I.

Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs/;GaAs quantum dots

Reitzenstein S.; Hofmann C.; Gorbunov A.; Strauß M.; Kwon S. H.; Schneider C.; Löffler A.; Höfling S.; Kamp M.; Forchel A.

AlAs/;GaAs micropillar cavities with quality factors exceeding 150.000

Spanheimer D.; Worschech L.; Müller C. R.; Forchel A.

Space charge induced gating by a leaky gate

Motyka M.; Kudrawiec R.; Sęk G.; Misiewicz J.; Bisping D.; Marquardt B.; Forchel A.; Fischer M.

Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells

Schlereth T. W.; Schneider C.; Kaiser W.; Höfling S.; Forchel A.

Low threshold, high gain AlGaInAs quantum dot lasers

Motyka M.; Kudrawiec R.; Sęk G.; Misiewicz J.; Bisping D.; Marquardt B.; Forchel A.; Fischer M.

Contactless electroreflectance investigation of energy levels in a 1.3 μ;m emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs/;GaAs quantum wells

Ponomarev I. V.; Schwab M.; Dasbach G.; Bayer M.; Reinecke T. L.; Reithmaier J. P.; Forchel A.

Influence of geometric disorder on the band structure of a photonic crystal: Experiment and theory

Margapoti E.; Worschech L.; Forchel A.; Tribu A.; Aichele T.; André R.; Kheng K.

Annealing induced inversion of quantum dot fine-structure splitting

Wallin D.; Fuhrer A.; Fröberg L. E.; Samuelson L.; Xu H. Q.; Hofling S.; Forchel A.

Detection of charge states in nanowire quantum dots using a quantum point contact

Ates S.; Ulrich S. M.; Michler P.; Reitzenstein S.; Löffler A.; Forchel A.

Coherence properties of high-β; elliptical semiconductor micropillar lasers

Sünner T.; Gellner M.; Löffler A.; Kamp M.; Forchel A.

Group delay measurements on photonic crystal resonators

Hofmann H.; Scherer H.; Deubert S.; Kamp M.; Forchel A.

Spectral and spatial single mode emission from a photonic crystal distributed feedback laser

Press David; Götzinger Stephan; Reitzenstein Stephan; Hofmann Carolin; Löffler Andreas; Kamp Martin; Forchel Alfred; Yamamoto Yoshihisa

Photon Antibunching from a Single Quantum-Dot-Microcavity System in the Strong Coupling Regime

Hartmann D.; Lang S.; Worschech L.; Forchel A.

Shunt quantum capacitance induced source switching in an electron Y-branch switch

Sęk G.; Poloczek P.; Podemski P.; Kudrawiec R.; Misiewicz J.; Somers A.; Hein S.; Höfling S.; Forchel A.

Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for ;1.55 μ;m emission

Ulrich S. M.; Gies C.; Ates S.; Wiersig J.; Reitzenstein S.; Hofmann C.; Löffler A.; Forchel A.; Jahnke F.; Michler P.

Photon Statistics of Semiconductor Microcavity Lasers

Kudrawiec R.; Motyka M.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.; Sauerwald A.; Kümmell T.; Bacher G.

Contactless electroreflectance of InAs/;In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate; Analysis of the wetting layer transition

Schmidt T.; Scheibner M.; Worschech L.; Forchel A.; Slobodskyy T.; Molenkamp L. W.

Sign reversal and light controlled tuning of circular polarization in semimagnetic CdMnSe quantum dots

Höfling S.; Heinrich J.; Reithmaier J. P.; Forchel A.; Seufert J.; Fischer M.; Koeth J.

Widely tunable single-mode quantum cascade lasers with two monolithically coupled Fabry-Pérot cavities

Renner Johannes; Worschech Lukas; Forchel Alfred; Mahapatra Suddhasatta; Brunner Karl

CdSe quantum dot microdisk laser

Reitzenstein S.; Ponomarev I. V.; Keldysh L. V.; Kulakovskii V. D.; Forchel A.; Reithmaier J. P.; Kamp Martin; Hofmann C.; Kubanek A.; Löffler Andreas; Reinecke T. L.

Coherent photonic coupling of semiconductor quantum dots: erratum

Margapoti E.; Worschech L.; Forchel A.; Slobodskyy T.; Molenkamp L. W.

Enhanced Zn–Cd interdiffusion and biexciton formation in self-assembled CdZnSe quantum dots in thermally annealed small mesas

Sęk G.; Poloczek P.; Ryczko K.; Misiewicz J.; Löffler A.; Reithmaier J. P.; Forchel A.

Photoreflectance determination of the wetting layer thickness in the InxGa1-x;As/;GaAs quantum dot system for a broad indium content range of 0.3–1

Höfling S.; Heinrich J.; Hofmann H.; Kamp M.; Reithmaier J. P.; Forchel A.; Seufert J.

Photonic crystal quantum cascade lasers with improved threshold characteristics operating at room temperature

Podemski P.; Kudrawiec R.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Thermal quenching of photoluminescence from InAs/;In0.53Ga0.23Al0.24As/;InP quantum dashes with different sizes

Hartmann D.; Worschech L.; Höfling S.; Forchel A.; Reithmaier J. P.

Self-gating in an electron Y-branch switch at room temperature

Renner J.; Worschech L.; Forchel A.; Mahapatra S.; Brunner K.

Whispering gallery modes in high quality ZnSe/;ZnMgSSe microdisks with CdSe quantum dots studied at room temperature

van der Poel M.; Mørk J.; Somers A.; Forchel A.; Reithmaier J. P.; Eisenstein G.

Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55 μ;m

Babinski A.; Ortner G.; Raymond S.; Potemski M.; Bayer M.; Sheng W.; Hawrylak P.; Wasilewski Z.; Fafard S.; Forchel A.

Ground-state emission from a single InAs/;GaAs self-assembled quantum dot structure in ultrahigh magnetic fields

Podemski P.; Kudrawiec R.; Misiewicz J.; Somers A.; Reithmaier J. P.; Forchel A.

On the tunnel injection of excitons and free carriers from In0.53Ga0.47As/;In0.53Ga0.23Al0.24As quantum well to InAs/;In0.53Ga0.23Al0.24As quantum dashes

Somers A.; Kaiser W.; Reithmaier J. P.; Forchel A.; Gioaninni M.; Montrosset I.

Optical gain properties of InAs/;InAlGaAs/;InP quantum dash structures with a spectral gain bandwidth of more than 300 ;nm

Reitzenstein S.; Bazhenov A.; Gorbunov A.; Hofmann C.; Münch S.; Löffler A.; Kamp M.; Reithmaier J. P.; Kulakovskii V. D.; Forchel A.

Lasing in high-Q quantum-dot micropillar cavities

Mahapatra S.; Kiessling T.; Margapoti E.; Astakhov G. V.; Ossau W.; Worschech L.; Forchel A.; Brunner K.

Formation mechanism and properties of CdSe quantum dots on ZnSe by low temperature epitaxy and in situ annealing

Rudno-Rudziński W.; Kudrawiec R.; Podemski P.; Sęk G.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Photoreflectance-probed excited states in InAs/;InGaAlAs quantum dashes grown on InP substrate

Schwab M.; Benyoucef M.; Forchel A.; Reithmaier J. P.; Jahnke F.; Gies C.; Baer N.; Wiersig J.; Bayer M.; Berstermann T.; Auer T.; Kurtze H.; Michler P.

Radiative emission dynamics of quantum dots in a single cavity micropillar

Härkönen A.; Guina M.; Okhotnikov O.; Rößner K.; Hümmer M.; Lehnhardt T.; Müller M.; Forchel A.; Fischer M.

1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm

Sauerwald A.; Kümmell T.; Peskes D.; Bacher G.; Löffler A.; Reithmaier J. P.; Forchel A.

Scanning transmission electron microscope study on vertically correlated InGaAs/;GaAs quantum dots

Poloczek P.; Sęk G.; Misiewicz J.; Löffler A; Reithmaier J. P.; Forchel A.

Optical properties of low-strained InxGa1-x;As/;GaAs quantum dot structures at the two-dimensional–three-dimensional growth transition

Höfling S.; Jovanović V. D.; Indjin D.; Reithmaier J. P.; Forchel A.; Ikonić Z.; Vukmirović N.; Harrison P.; Mirčetić A.; Milanović V.

Dependence of saturation effects on electron confinement and injector doping in GaAs/;Al0.45Ga0.55As quantum-cascade lasers

Reitzenstein S.; Löffler Andreas; Hofmann C.; Kubanek A.; Kamp Martin; Reithmaier J. P.; Forchel Alfred; Kulakovskii V. D.; Keldysh L. V.; Ponomarev I. V.; Reinecke T. L.

Coherent photonic coupling of semiconductor quantum dots

Ferrini R.; Leuenberger D.; Houdré R.; Benisty H.; Kamp Martin; Forchel Alfred

Disorder-induced losses in planar photonic crystals

Jovanović V. D.; Reithmaier J. P.; Harrison P.; Ikonić Z.; Vukmirović N.; Indjin D.; Höfling S.; Forchel A.

Influence of doping density on electron dynamics in GaAs/;AlGaAs quantum cascade lasers

Herrmann Rafael; Sünner Thomas; Hein Tobias; Löffler Andreas; Kamp Martin; Forchel Alfred

Ultrahigh-quality photonic crystal cavity in GaAs

Rudno-Rudziński W.; Kudrawiec R.; Sęk G.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As/;In0.53Ga0.23Al0.24As quantum well grown on InP substrate

Scheibner M.; Schmidt G.; Slobodskyy T.; Bacher G.; Forchel A.; Worschech L.; Kennedy T. A.; Molenkamp L. W.

Coherent dynamics of locally interacting spins in self-assembled Cd1-x;MnxSe/;ZnSe quantum dots

Scherer H.; Namje K.; Deubert S.; Löffler A.; Reithmaier J. P.; Kamp M.; Forchel A.

Integrated four-channel GaAs-based quantum dot laser module with photonic crystals

Schuller Ch.; Reithmaier J. P.; Zimmermann J.; Kamp M.; Forchel A.; Anand S.

Polarization-dependent optical properties of planar photonic crystals infiltrated with liquid crystals

Ortner G.; Schwab M.; Bayer M.; Pässler R.; Fafard S.; Wasilewski Z.; Hawrylak P.; Forchel A.

Temperature dependence of the excitonic band gap in InxGa1-x;As/;GaAs self-assembled quantum dots

Hadass D.; Mikhelashvili V.; Eisenstein G.; Somers A.; Deubert S.; Kaiser W.; Reithmaier J. P.; Forchel A.; Finzi D.; Maimon Y.

Time-resolved chirp in an InAs/;InP quantum-dash optical amplifier operating with 10 ;Gbit/;s data

Halm S.; Bacher G.; Schömig H.; Forchel A.; Off J.; Scholz F.

Optical Spectroscopy on Single Localized States in an InGaN/GaN Structure

Baer Norman; Wiersig Jan; Gartner Paul; Jahnke Frank; Benyoucef Mohamed; Ulrich Sven M.; Michler Peter; Forchel Alfred

Optical properties of semiconductor quantum dots and pillar microcavities

Marko I. P.; Andreev A. D.; Sweeney S. J.; Adams A. R.; Krebs R.; Deubert S.; Reithmaier J. P.; Forchel A.

The Influence of Auger Processes on Recombination in Long‐Wavelength InAs/GaAs Quantum Dots

Ulrich S. M.; Kurtze H.; Oulton R.; Bayer M.; Fafard S.; Wasilewski Z.; Benyoucef M.; Michler P.; Wiersig J.; Baer N.; Gartner P.; Jahnke F.; Schwab M.; Forchel A.

Single‐Photon And Photon Pair Emission From Individual (In,Ga)As Quantum Dots

Sauerwald A.; Kümmell T.; Bacher G.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Structural Analysis of InAs Quantum Dashes Grown on InP Substrate by Scanning Transmission Electron Microscopy

Lyanda-Geller Y. B.; Bacher G.; Reinecke T. L.; Welsch M. K.; Forchel A.; Becker C. R.; Molenkamp L.

Strongly Tunable Coupling Between Quantum Dots

Sauerwald A.; Kümmell T.; Bacher G.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Size control of InAs quantum dashes

Ulrich S. M.; Wasilewski Z.; Fafard S.; Bayer M.; Kurtze H.; Schwab M.; Jahnke F.; Gartner P.; Baer N.; Michler P.; Benyoucef M.; Forchel A.

Correlated photon-pair emission from a charged single quantum dot

Ortner G.; Reithmaier J. P.; Kress A.; Reinecke T. L.; Lyanda-Geller Y.; Bayer M.; Forchel A.

Control of Vertically Coupled InGaAs/GaAs Quantum Dots with Electric Fields

Dasbach G.; Diederichs C.; Tignon J.; Ciuti C.; Roussignol Ph.; Delalande C.; Bayer M.; Forchel A.

Polarization inversion via parametric scattering in quasi-one-dimensional microcavities

Ortner G.; Yugova I.; von Högersthal G. Baldassarri Höger; Larionov A.; Kurtze H.; Yakovlev D. R.; Bayer M.; Fafard S.; Wasilewski Z.; Hawrylak P.; Lyanda-Geller Y. B.; Reinecke T. L.; Babinski A.; Potemski M.; Timofeev V. B.; Forchel A.

Fine structure in the excitonic emission of InAs/;GaAs quantum dot molecules

Löffler A.; Reithmaier J. P.; Sęk G.; Hofmann C.; Reitzenstein S.; Kamp M.; Forchel A.

Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions

Rudno-Rudziński W.; Sęk G.; Ryczko K.; Kudrawiec R.; Misiewicz J.; Somers A.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures

Leuenberger David; Ferrini Rolando; Dunbar L. Andrea; Houdré Romuald; Kamp Martin; Forchel Alfred

Codirectional couplers in GaAs-based planar photonic crystals

Benyoucef M.; Ulrich S. M.; Michler P.; Wiersig J.; Jahnke F.; Forchel A.

Correlated photon pairs from single (In,Ga)As/;GaAs quantum dots in pillar microcavities

Hadass D.; Alizon R.; Dery H.; Mikhelashvili V.; Eisenstein G.; Schwertberger R.; Somers A.; Reithmaier J. P.; Forchel A.; Calligaro M.; Bansropun S.; Krakowski M.

Spectrally resolved dynamics of inhomogeneously broadened gain in InAs/;InP 1550 ;nm quantum-dash lasers

Ortner G.; Yakovlev D. R.; Bayer M.; Rudin S.; Reinecke T. L.; Fafard S.; Wasilewski Z.; Forchel A.

Temperature dependence of the zero-phonon linewidth in InAs/;GaAs quantum dots

Zimmermann J.; Scherer H.; Kamp M.; Deubert S.; Reithmaier J. P.; Forchel A.; März R.; Anand S.

Photonic crystal waveguides with propagation losses in the 1 ;dB/;mm range

Scherer H.; Gollub D.; Kamp M.; Forchel A.

GaAs-based 1.3 μ;m microlasers with photonic crystal mirrors

Schömig H.; Halm S.; Puls J.; Back C. H.; Kipferl W.; Forchel A.; Bacher G.; Henneberger F.

Micromagnetoluminescence on ferromagnet–semiconductor hybrid nanostructures

Dery H.; Benisty E.; Epstein A.; Alizon R.; Mikhelashvili V.; Eisenstein G.; Schwertberger R.; Gold D.; Reithmaier J. P.; Forchel A.

On the nature of quantum dash structures

Schömig H.; Forchel A.; Halm S.; Bacher G.; Puls J.; Henneberger F.

Magnetic imprinting of submicron ferromagnetic wires on a diluted magnetic semiconductor quantum well

Auzanneau Sophie-Charlotte; Calligaro Michel; Krakowski Michel; Klopf Frank; Deubert Stefan; Reithmaier Johann Peter; Forchel Alfred

High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

Schömig H.; Halm S.; Forchel A.; Bacher G.; Off J.; Scholz F.

Probing Individual Localization Centers in an InGaN/GaN Quantum Well

Mulot M.; Moosburger J.; Houdré R.; Wild B.; Ferrini R.; Anand S.; Forchel A.

Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching

Obert M.; Renner J.; Forchel A.; Bacher G.; André R.; Le Si Dang D.

Nonlinear emission in II–VI pillar microcavities; Strong versus weak coupling

Seufert J.; Bacher G.; Schömig H.; Forchel A.; Hansen L.; Schmidt G.; Molenkamp L. W.

Spin injection into a single self-assembled quantum dot

Qiu Min; Mulot Mikaël; Swillo Marcin; Anand Srinivasan; Jaskorzynska Bozena; Karlsson Anders; Kamp Martin; Forchel Alfred

Photonic crystal optical filter based on contra-directional waveguide coupling

Dorozhkin P. S.; Dobrowolska M.; Lee S.; Forchel A.; Bacher G.; Schoemig H.; Maksimov A. A.; Brichkin A. S.; Kulakovskii V. D.; Chernenko A. V.; Furdyna J. K.

Longitudinal and transverse fluctuations of magnetization of the excitonic magnetic polaron in a semimagnetic single quantum dot

Dechow Jörn; Lanz Titus; Stumber Michael; Forchel Alfred; Haase Axel

Preamplified planar microcoil on GaAs substrates for microspectroscopy

Kudrawiec R.; Se☒k G.; Misiewicz J.; Gollub D.; Forchel A.

Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells

Worschech L.; Reitzenstein S.; Hartmann P.; Kaiser S.; Kamp M.; Forchel A.

Self-switching of branched multiterminal junctions: a ballistic half-adder

Ulrich S. M.; Strauf S.; Michler P.; Bacher G.; Forchel A.

Triggered polarization-correlated photon pairs from a single CdSe quantum dot

Reithmaier J. P.; Bach L.; Forchel A.

Focused Ion Beam Technology for Optoelectronic Devices

Geddo M.; Guizzetti G.; Capizzi M.; Polimeni A.; Gollub D.; Forchel A.

Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-x;As1-y;Ny alloy

Schallenberg T.; Faschinger W.; Karczewski G.; Molenkamp L. W.; Türck V.; Rodt S.; Heitz R.; Bimberg D.; Obert M.; Bacher G.; Forchel A.

In situ lateral growth control of optically efficient quantum structures

Alizon R.; Bilenca A.; Dery H.; Mikhelashvili V.; Eisenstein G.; Schwertberger R.; Gold D.; Reithmaier J. P.; Forchel A.

Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning

Baldassarri Höger von Högersthal G.; Polimeni A.; Masia F.; Bissiri M.; Capizzi M.; Gollub D.; Fischer M.; Forchel A.

Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures

Seufert J.; Rambach M.; Bacher G.; Forchel A.; Passow T.; Hommel D.

Single-electron charging of a self-assembled II–VI quantum dot

Mahnkopf S.; Kamp M.; Forchel A.; März R.

Tunable distributed feedback laser with photonic crystal mirrors

Vinattieri A.; Alderighi D.; Zamfirescu M.; Colocci M.; Polimeni A.; Capizzi M.; Gollub D.; Fischer M.; Forchel A.

Role of the host matrix in the carrier recombination of InGaAsN alloys

Mensing T.; Worschech L.; Schwertberger R.; Reithmaier J. P.; Forchel A.

Magneto-optical investigations of single self-assembled InAs/InGaAlAs quantum dashes

Schuller Ch.; Klopf F.; Reithmaier J. P.; Kamp M.; Forchel A.

Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals

Scheibner M.; Bacher G.; Weber S.; Forchel A.; Passow Th.; Hommel D.

Polarization dynamics in self-assembled CdSe/ZnSe quantum dots: The role of excess energy

Reitzenstein S.; Worschech L.; Hartmann P.; Forchel A.

Pronounced switching bistability in a feedback coupled nanoelectronic Y-branch switch

Ortner G.; Fafard S.; Hawrylak P.; Reinecke T. L.; Lyanda-Geller Y. B.; Forchel A.; Timofeev V. B.; Larionov A.; Bayer M.; Wasilewski Z.

Fine Structure of Excitons in InAs/GaAs Coupled Quantum Dots: A Sensitive Test of Electronic Coupling

Happ Thomas D.; Kamp Martin; Forchel Alfred; Bazhenov Anatolii V.; Tartakovskii Ilja I.; Gorbunov Alexander; Kulakovskii Vladimir D.

Coupling of point-defect microcavities in two-dimensional photonic-crystal slabs

Kubisa M.; Bryja L.; Ryczko K.; Misiewicz J.; Bardot C.; Potemski M.; Ortner G.; Bayer M.; Forchel A.; Sørensen C. B.

Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-x;As/GaAs heterostructures

Happ Thomas D.; Kamp Martin; Forchel Alfred; Gentner Jean-Louis; Goldstein L.

Two-dimensional photonic crystal coupled-defect laser diode

Kaiser S.; Mensing T.; Worschech L.; Klopf F.; Reithmaier J. P.; Forchel A.

Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well

Gollub D.; Fischer M.; Kamp M.; Forchel A.

1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes

Passow T.; Leonardi K.; Heinke H.; Hommel D.; Litvinov D.; Rosenauer A.; Gerthsen D.; Seufert J.; Bacher G.; Forchel A.

Quantum dot formation by segregation enhanced CdSe reorganization

Reitzenstein S.; Worschech L.; Hartmann P.; Kamp M.; Forchel A.

Capacitive-Coupling-Enhanced Switching Gain in an Electron Y-Branch Switch

Dasbach G.; Schwab M.; Bayer M.; Krizhanovskii D.N.; Forchel A.

Tailoring the polariton dispersion by optical confinement: Access to a manifold of elastic polariton pair scattering channels

Strauf S.; Michler P.; Klude M.; Hommel D.; Bacher G.; Forchel A.

Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

Sebald K.; Michler P.; Passow T.; Hommel D.; Bacher G.; Forchel A.

Single-photon emission of CdSe quantum dots at temperatures up to 200 K

Bacher G.; Dobrowolska M.; Lee S.; Chernenko A. V.; Dorozhkin P. S.; Forchel A.; Welsch M. K.; Kulakovskii V. D.; Schömig H.; Maksimov A. A.; Furdyna J. K.

Monitoring Statistical Magnetic Fluctuations on the Nanometer Scale

Zhuk V.; Regelman D.V.; Gershoni D.; Bayer M.; Reithmaier J.P.; Forchel A.; Knipp P.A.; Reinecke T.L.

Near-field mapping of the electromagnetic field in confined photon geometries

Schliemann A.; Worschech L.; Reitzenstein S.; Kaiser S.; Forchel A.

Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots

Kammerer C.; Forchel A.; Reithmaier J. P.; Klopf F.; Roussignol Ph.; Delalande C.; Cassabois G.; Voisin C.; Gérard J. M.

Line narrowing in single semiconductor quantum dots: Toward the control of environment effects

Happ T. D.; Tartakovskii I. I.; Kulakovskii V. D.; Reithmaier J.-P.; Kamp M.; Forchel A.

Enhanced light emission of InxGa1-x;As quantum dots in a two-dimensional photonic-crystal defect microcavity

Bissiri M.; von Högersthal G. Baldassarri Höger; Polimeni A.; Capizzi M.; Gollub D.; Fischer M.; Reinhardt M.; Forchel A.

Role of N clusters in InxGa1-x;As1-y;Ny band-gap reduction

Klopf F.; Deubert S.; Reithmaier J. P.; Forchel A.

Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

Dasbach G.; Dremin A. A.; Bayer M.; Kulakovskii V. D.; Gippius N. A.; Forchel A.

Oscillations in the differential transmission of a semiconductor microcavity with reduced symmetry

Polimeni A.; Bissiri M.; Augieri A.; Baldassarri Höger von Högersthal G.; Capizzi M.; Gollub D.; Fischer M.; Reinhardt M.; Forchel A.

Reduced temperature dependence of the band gap in GaAs1-y;Ny investigated with photoluminescence

Bissiri M.; Reinhardt M.; Fischer M.; Gollub D.; Stavola M.; Jiang F.; Bonapasta A. Amore; Capizzi M.; Ranalli F.; Gaspari V.; Polimeni A.; Baldassarri Höger von Högersthal G.; Forchel A.

Hydrogen-induced passivation of nitrogen in GaAs1-y;Ny

Bayer M.; Ortner G.; Stern O.; Kuther A.; Gorbunov A. A.; Forchel A.; Hawrylak P.; Fafard S.; Hinzer K.; Reinecke T. L.; Walck S. N.; Reithmaier J. P.; Klopf F.; Schäfer F.

Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots

Moosburger Jürgen; Kamp Martin; Forchel Alfred; Oesterle Ursula; Houdré Romuald

Transmission spectroscopy of photonic crystal based waveguides with resonant cavities

Fischer Marc; Gollub Dirk; Forchel Alfred

1.3 μm GaInAsN Laserdiodes with improved High Temperature Performance

Krebs Roland; Reithmaier Johann Peter; Klopf Frank; Forchel Alfred

High Performance 1.3 μm Quantum-Dot Lasers

Obert M.; Wild B.; Bacher G.; Forchel A.; André R.; Dang Le Si

Optical confinement in CdTe-based photonic dots

Bayer M.; Forchel A.

Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots

Seufert J.; Bacher G.; Scheibner M.; Forchel A.; Lee S.; Dobrowolska M.; Furdyna J. K.

Dynamical Spin Response in Semimagnetic Quantum Dots

Happ Thomas D.; Markard Alexander; Kamp Martin; Forchel Alfred; Anand Srinivasan

Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals

Moosburger Jürgen; Kamp Martin; Forchel Alfred; Olivier Ségolène; Benisty Henri; Weisbuch Claude; Oesterle Ursula

Enhanced transmission through photonic-crystal-based bent waveguides by bend engineering

Dasbach G.; Schwab M.; Bayer M.; Forchel A.

Parametric polariton scattering in microresonators with three-dimensional optical confinement

Bayer M.; Kuther A.; Kulakovskii V. D.; Forchel A.; Knipp P. A.; Reinecke T. L.

Control of light polarization in structured cavities by a magnetic field

Worschech L.; Xu H. Q.; Forchel A.; Samuelson L.

Bias-voltage-induced asymmetry in nanoelectronic Y-branches

Happ T. D.; Markard A.; Kamp M.; Forchel A.; Anand S.; Gentner J.-L.; Bouadma N.

Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers

Müller M.; Kamp M.; Forchel A.; Gentner J.-L.

Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP–InP

Guttroff G.; Bayer M.; Reithmaier J. P.; Forchel A.; Knipp P. A.; Reinecke T. L.

Photonic defect states in chains of coupled microresonators

Bissiri M.; Gaspari V.; Polimeni A.; Baldassarri Höger von Högersthal G.; Capizzi M.; Frova A.; Fischer M.; Reinhardt M.; Forchel A.

High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells

Bach L.; Reithmaier I. P.; Forchel A.; Gentner J. L.; Goldstein L.

Multiwavelength laterally complex coupled distributed feedback laser arrays with monolithically integrated combiner fabricated by focused-ion-beam lithography

Sun Y. T.; Rodrı´guez Messmer E.; Lourdudoss S.; Ahopelto J.; Rennon S.; Reithmaier J. P.; Forchel A.

Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Seufert J.; Obert M.; Bacher G.; Forchel A.; Passow T.; Leonardi K.; Hommel D.

Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots

Worschech Lukas; Fischer Frank; Forchel Alfred; Kamp Martin; Schweizer Heinz

High Frequency Operation of Nanoelectronic Y-Branch at Room Temperature

Seufert J.; Obert M.; Scheibner M.; Gippius N. A.; Bacher G.; Forchel A.; Passow T.; Leonardi K.; Hommel D.

Stark effect and polarizability in a single CdSe/ZnSe quantum dot

Bacher G.; Schömig H.; Welsch M. K.; Zaitsev S.; Kulakovskii V. D.; Forchel A.; Lee S.; Dobrowolska M.; Furdyna J. K.; König B.; Ossau W.

Optical spectroscopy on individual CdSe/ZnMnSe quantum dots

Happ Thomas D.; Kamp Martin; Forchel Alfred

Photonic crystal tapers for ultracompact mode conversion

Kamp M.; Hofmann J.; Forchel A.; Lourdudoss S.

Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors

Baldassarri H. v. H. G.; Bissiri M.; Polimeni A.; Capizzi M.; Fischer M.; Reinhardt M.; Forchel A.

Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells

Worschech L.; Weidner B.; Reitzenstein S.; Forchel A.

Investigation of switching effects between the drains of an electron Y-branch switch

Polimeni A.; Baldassarri H. v. G.; Bissiri H. M.; Capizzi M.; Fischer M.; Reinhardt M.; Forchel A.

Effect of hydrogen on the electronic properties of InxGa1-x;As1-y;Ny/GaAs quantum wells

Polimeni A.; Capizzi M.; Geddo M.; Fischer M.; Reinhardt M.; Forchel A.

Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-x;As1-y;Ny/GaAs single quantum wells

Welsch M. K.; Schömig H.; Legge M.; Bacher G.; Forchel A.; König B.; Becker C. R.; Ossau W.; Molenkamp L. W.

Selective thermal interdiffusion using patterned SiO2 masks: An alternative approach to buried CdTe/CdMgTe quantum wires

Legge M.; Bacher G.; Bader S.; Kümmell T.; Forchel A.; Nürnberger J.; Schumacher C.; Faschinger W.; Landwehr G.

Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors

Baars T.; Dasbach G.; Bayer M.; Forchel A.

Biexciton states in semiconductor microcavities

Wagner H. P.; Tranitz H.-P.; Schuster R.; Bacher G.; Forchel A.

Biexciton binding energy and exciton–LO-phonon scattering in ZnSe quantum wires

Baars T.; Bayer M.; Gorbunov A. A.; Forchel A.

Biexcitons in InxGa1-x;As/GaAs quantum wells subject to high magnetic fields

Manninen Antti; Kauranen Jari; Prunnila Mika; Forchel Alfred; Emmerling Monika; Kamp Martin; Savin Alexander; Pekola Jukka; Ahopelto Jouni

Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate

Guttroff G.; Bayer M.; Forchel A.; Knipp P. A.; Reinecke T. L.

Isomeric photonic molecules formed from coupled microresonators

Hinzer K.; Hawrylak P.; Korkusinski M.; Fafard S.; Bayer M.; Stern O.; Gorbunov A.; Forchel A.

Optical spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As quantum dot

Grenzer J.; Darowski N.; Pietsch U.; Daniel A.; Rennon S.; Reithmaier J. P.; Forchel A.

Grazing-incidence diffraction strain analysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation

Keim M.; Toropov A.; Shubina T. V.; Sitnikova A. A.; Sorokin S.; Ivanov S.; Landwehr G.; Forchel A.; Bacher G.; Seufert J.; Korn M.; Waag A.

Be-enhanced CdSe island formation in CdSe/ZnSe heterostructures

Worschech L.; Reitzenstein S.; Forchel A.

Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures

Dasbach G.; Baars T.; Bayer M.; Larionov A.; Forchel A.

Coherent and incoherent polaritonic gain in a planar semiconductor microcavity

Seufert J.; Rambach M.; Bacher G.; Forchel A.; Keim M.; Ivanov S.; Waag A.; Landwehr G.

Be-induced island formation in CdSe/ZnSe heterostructures: Ensemble versus single dot studies

Martini Ingo; Kuhn Silke; Kamp Martin; Worschech Lukas; Forchel Alfred; Eisert Dominik; Koeth Johannes; Sijbesma Rint

Fabrication of quantum point contacts by imprint lithography and transport studies

Moosburger J.; Happ Th.; Kamp M.; Forchel A.

Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors

Polimeni A.; Capizzi M.; Geddo M.; Fischer M.; Reinhardt M.; Forchel A.

Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

Kristensen A.; Bruus H.; Hansen A. E.; Jensen J. B.; Lindelof P. E.; Marckmann C. J.; Nygård J.; Sørensen C. B.; Beuscher F.; Forchel A.; Michel M.

Bias and temperature dependence of the 0.7 conductance anomaly in quantum point contacts

Martini Ingo; Eisert Dominik; Kamp Martin; Worschech Lukas; Forchel Alfred; Koeth Johannes

Quantum point contacts fabricated by nanoimprint lithography

Maksimov A. A.; Bacher G.; McDonald A.; Landwehr G.; Becker C. R.; Forchel A.; Kulakovskii V. D.; Molenkamp L. W.

Magnetic polarons in a single diluted magnetic semiconductor quantum dot

Wang T.; Bayer M.; Forchel A.; Gippius N. A.; Kulakovskii V.

Magneto-optical study of excitonic states in In0.045Ga0.955As/GaAs multiple coupled quantum wells

Klopf F.; Reithmaier J. P.; Forchel A.

Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

Rennon S.; Bach L.; Reithmaier J. P.; Forchel A.; Gentner J. L.; Goldstein L.

High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography

Schreder B.; Materny A.; Kiefer W.; Kümmell T.; Bacher G.; Forchel A.; Landwehr G.

Raman investigation of CdxZn1-x;Se/ZnSe quantum wires; Strain relaxation and excitation profile

Hawrylak P.; Bayer M.; Narvaez G. A.; Forchel A.

Excitonic Absorption in a Quantum Dot

Aichmayr G.; Martı´n M. D.; van der Meulen H.; Pascual C.; Viña L.; Calleja J. M.; Schafer F.; Reithmaier J. P.; Forchel A.

Carrier and light trapping in graded quantum-well laser structures

Seufert J.; Weigand R.; Bacher G.; Kümmell T.; Forchel A.; Leonardi K.; Hommel D.

Spectral diffusion of the exciton transition in a single self-organized quantum dot

Bayer M.; Stern O.; Kuther A.; Forchel A.

Spectroscopic study of dark excitons in InxGa1-x;As self-assembled quantum dots by a magnetic-field-induced symmetry breaking

Baars T.; Bayer M.; Forchel A.; Schäfer F.; Reithmaier J. P.

Polariton-polariton scattering in semiconductor microcavities: Experimental observation of thresholdlike density dependence

Bayer M.; Gutbrod T.; Forchel A.; Reinecke T. L.; Knipp P. A.; Werner R.; Reithmaier J. P.

Optical Demonstration of a Crystal Band Structure Formation

Ulyanenkov A.; Darowski N.; Grenzer J.; Pietsch U.; Wang K. H.; Forchel A.

Evaluation of strain distribution in freestanding and buried lateral nanostructures

Bacher G.; Weigand R.; Seufert J.; Kulakovskii V. D.; Gippius N. A.; Forchel A.; Leonardi K.; Hommel D.

Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot

Tachibana Koichi; Someya Takao; Arakawa Yasuhiko; Werner Ralph; Forchel Alfred

Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser

Walck S. N.; Reinecke T. L.; Bayer M.; Gutbrod T.; Reithmaier J. P.; Forchel A.

Magnetic-field dependence of the exciton-photon coupling in structured photonic cavities

Mais N.; Reithmaier J. P.; Forchel A.; Kohls M.; Spanhel L.; Müller G.

Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applications

König Harald; Reithmaier Johann Peter; Forchel Alfred

Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching

Bayer M.; Kuther A.; Schäfer F.; Reithmaier J. P.; Forchel A.

Strong variation of the exciton g factors in self-assembled In0.60Ga0.40As quantum dots

König H.; Rennon S.; Reithmaier J. P.; Forchel A.; Gentner J. L.; Goldstein L.

1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation

Tachibana Koichi; Someya Takao; Arakawa Yasuhiko; Werner Ralph; Forchel Alfred

Room temperature lasing action in an Ingan quantum dot laser under optical excitation

Bacher G.; Kümmell T.; Eisert D.; Forchel A.; König B.; Ossau W.; Becker C. R.; Landwehr G.

Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography

Worschech L.; Beuscher F.; Forchel A.

Quantized conductance in up to 20 μm long shallow etched GaAs/AlGaAs quantum wires

Bacher G.; Eisert D.; Kümmell T.; Forchel A.; Kühnelt M.; Wagner H. P.; Landwehr G.

Implantation induced changes in II-VI semiconductor heterostructures

Schäfer F.; Reithmaier J. P.; Forchel A.

High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer

Tartakovskii A. I.; Forchel A.; Dorozhkin P. S.; Kulakovskii V. D.; Reithmaier J. P.

Far-field emission pattern and photonic band structure in one-dimensional photonic crystals made from semiconductor microcavities

Wang T.; Forchel A.

Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy

Kulakovskii V. D.; Bacher G.; Weigand R.; Kümmell T.; Forchel A.; Borovitskaya E.; Leonardi K.; Hommel D.

Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe; Single Quantum Dots

Bayer M.; Kuther A.; Forchel A.; Gorbunov A.; Timofeev V. B.; Schäfer F.; Reithmaier J. P.; Reinecke T. L.; Walck S. N.

Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In0.60Ga0.40As Quantum Dots

Ulyanenkov A.; Baumbach T.; Darowski N.; Pietsch U.; Wang K. H.; Forchel A.; Wiebach T.

In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001]

Kamp M.; Hofmann J.; Forchel A.; Schäfer F.; Reithmaier J. P.

Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers

Herz K.; Bacher G.; Forchel A.; Straub H.; Brunthaler G.; Faschinger W.; Bauer G.; Vieu C.

Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization

Gutbrod T.; Bayer M.; Forchel A.; Knipp P. A.; Reinecke T. L.; Tartakovskii A.; Kulakovskii V. D.; Gippius N. A.; Tikhodeev S. G.

Angle dependence of the spontaneous emission from confined optical modes in photonic dots

Kamp M.; Emmerling M.; Kuhn S.; Forchel A.

Nanolithography using a 100 kV electron beam lithography system with a Schottky emitter

Kuther A.; Bayer M.; Gutbrod T.; Forchel A.; Knipp P. A.; Reinecke T. L.; Werner R.

Confined optical modes in photonic wires

Kümmell T.; Weigand R.; Bacher G.; Forchel A.; Leonardi K.; Hommel D.; Selke H.

Single zero-dimensional excitons in CdSe/ZnSe nanostructures

Schäfer F.; Mayer B.; Reithmaier J. P.; Forchel A.

High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers

König H.; Reithmaier J. P.; Forchel A.; Gentner J. L.; Goldstein L.

1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation

Wang T.; Bayer M.; Forchel A.

Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells

Bayer M.; Reinecke T. L.; Walck S. N.; Timofeev V. B.; Forchel A.

Multiple resonances involving magnetoexcitons in a GaAs/Al0.30Ga0.70As quantum well

Wang T.; Forchel A.

Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor

Bayer M.; Gutbrod T.; Reithmaier J. P.; Forchel A.; Reinecke T. L.; Knipp P. A.; Dremin A. A.; Kulakovskii V. D.

Optical Modes in Photonic Molecules

Kuther A.; Bayer M.; Forchel A.; Gorbunov A.; Timofeev V. B.; Schäfer F.; Reithmaier J. P.

Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots

Ohnesorge B.; Weigand R.; Bacher G.; Forchel A.; Riedl W.; Karg F. H.

Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells

Bayer M.; Steffen R.; Michel M.; Gorbunov A.; Kulakovskii V. D.; Forchel A.; Gutbrod T.; Wang K. H.

Exciton complexes in InxGa1-x;As/GaAs quantum dots

Wang T.; Kieseling F.; Forchel A.

Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well

Kühnelt M.; Leichtner T.; Kaiser S.; Hahn B.; Wagner H. P.; Eisert D.; Bacher G.; Forchel A.

Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation

Baars T.; Braun W.; Bayer M.; Forchel A.

Biexcitons in semiconductor quantum wires

König H.; Müssig H.; Forchel A.; Reithmaier J. P.; Höfling E.; Mais N.; Brugger H.

Focused ion beam implantation for opto- and microelectronic devices

Kümmell T.; Bacher G.; Forchel A.; Lermann G.; Kiefer W.; Jobst B.; Hommel D.; Landwehr G.

Size dependence of strain relaxation and lateral quantization in deep etched CdxZn1-x;Se/ZnSe quantum wires

Braun W.; Bayer M.; Forchel A.; Schmitt O. M.; Bányai L.; Haug H.; Filin A. I.

Size dependence of exciton-exciton scattering in semiconductor quantum wires

Gippius N. A.; Yablonskii A. L.; Dzyubenko A. B.; Tikhodeev S. G.; Kulik L. V.; Kulakovskii V. D.; Forchel A.

Excitons in near-surface quantum wells in magnetic fields: Experiment and theory

Gutbrod T.; Bayer M.; Forchel A.; Reithmaier J. P.; Reinecke T. L.; Rudin S.; Knipp P. A.

Weak and strong coupling of photons and excitons in photonic dots

Koeth J.; Dietrich R.; Forchel A.

GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range

Tartakovskii A. I.; Kulakovskii V. D.; Forchel A.; Reithmaier J. P.

Exciton-photon coupling in photonic wires

Braun W.; Kulik L. V.; Baars T.; Bayer M.; Forchel A.

Localization of excitons in thermally annealed In0.14Ga0.86As/GaAs quantum wells studied by time-integrated four-wave mixing

Bayer M.; Reinecke T. L.; Walck S. N.; Forchel A.

Exciton binding energies and diamagnetic shifts in semiconductor quantum wires and quantum dots

Kazantsev D.; Guttroff G.; Bayer M.; Forchel A.

Sample temperature measurement in a scanning near-field optical microscope

Wagner H. P.; Langbein W.; Hvam J. M.; Bacher G.; Kümmell T.; Forchel A.

Exciton dephasing in ZnSe quantum wires

Kristensen A.; Sørensen C. B.; Zaffalon M.; Jensen J. Bo; Michel M.; Lindelof P. E.; Reimann S. M.; Forchel A.

Conductance quantization above 30 K in GaAlAs shallow-etched quantum point contacts smoothly joined to the background 2DEG

Herz K.; Kümmell T.; Bacher G.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.

Biexciton formation in CdxZn1-x;Se/ZnSe quantum-dot and quantum-well structures

Braun W.; Bayer M.; Forchel A.; Zull H.; Reithmaier J. P.; Filin A. I.; Reinecke T. L.

Enhanced exciton-phonon scattering in InxGa1-x;As/GaAs quantum wires

Wang K. H.; Pecher A.; Höfling E.; Forchel A.

Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths

Kümmell T.; Bacher G.; Forchel A.; Nürnberger J.; Faschinger W.; Landwehr G.; Jobst B.; Hommel D.

Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials

Lermann G.; Bischof T.; Materny A.; Kiefer W.; Kümmell T.; Bacher G.; Forchel A.; Landwehr G.

Wire-width dependence of the LO-phonon splitting and photoluminescence energy in ZnSe/Cd0.35Zn0.65Se quantum wires

Bacher G.; Hommel D.; Jobst B.; Forchel A.; Breitwieser O.; Kümmell T.; Spiegel R.; Landwehr G.

Relaxation of hot excitons in inhomogeneously broadened CdxZn1-x;Se/ZnSe nanostructures

Eisert D.; Bacher G.; Legge M.; Forchel A.; Nürnberger J.; Schüll K.; Faschinger W.; Landwehr G.

Wavelength control in II–VI laser diodes with first order distributed Bragg reflectors

Ohnesorge B.; Bayer M.; Forchel A.; Reithmaier J. P.; Gippius N. A.; Tikhodeev S. G.

Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities

Röhner M.; Reithmaier J. P.; Forchel A.; Schäfer F.; Zull H.

Laser emission from photonic dots

Kümmell T.; Bacher G.; Forchel A.; Nürnberger J.; Faschinger W.; Landwehr G.; Jobst B.; Hommel D.

Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching

Ahopelto J.; Sopanen M.; Lipsanen H.; Lourdudoss S.; Rodriguez Messmer E.; Höfling E.; Reithmaier J. P.; Forchel A.; Petersson A.; Samuelson L.

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Bayer M.; Schlier Ch.; Gréus Ch.; Forchel A.; Benner S.; Haug H.

Many-body effects in the quasi-one-dimensional magnetoplasma

Spiegel R.; Hommel D.; Jobst B.; Forchel A.; Bacher G.; Landwehr G.

Polarization-dependent formation of biexcitons in (Zn,Cd)Se/ZnSe quantum wells

Braun W.; Bayer M.; Forchel A.; Zull H.; Reithmaier J. P.; Filin A. I.; Walck S. N.; Reinecke T. L.

Excitonic wave packets in In0.135Ga0.865As/GaAs quantum wires

Paschke K.; Geue T.; Barberka T. A.; Bolm A.; Pietsch U.; Rösch M.; Batke E.; Faller F.; Kerkel K.; Oshinowo J.; Forchel A.

Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

Reithmaier J. P.; Höfling E.; Orth A.; Forchel A.

Focused ion beam technology: A new approach for the fabrication of optoelectronic devices

Lermann G.; Bischof T.; Materny A.; Kiefer W.; Kümmell T.; Bacher G.; Forchel A.; Landwehr G.

Resonant micro-Raman investigations of the ZnSe–LO splitting in II–VI semiconductor quantum wires

Michel M.; Forchel A.; Faller F.

Length quantization in In0.13Ga0.87As/GaAs quantum boxes with rectangular cross section

Reithmaier J. P.; Röhner M.; Zull H.; Schäfer F.; Forchel A.; Knipp P. A.; Reinecke T. L.

Size Dependence of Confined Optical Modes in Photonic Quantum Dots

Ohnesorge B.; Albrecht M.; Oshinowo J.; Forchel A.; Arakawa Y.

Rapid carrier relaxation in self‐assembled In;xGa1-;xAs/GaAs quantum dots

Adler F.; Geiger M.; Bauknecht A.; Scholz F.; Schweizer H.; Pilkuhn M. H.; Ohnesorge B.; Forchel A.

Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots

Orth A.; Reithmaier J. P.; Zeh R.; Doleschel H.; Forchel A.

First order gain‐coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

Bayer M.; Timofeev V. B.; Faller F.; Gutbrod T.; Forchel A.

Direct and indirect excitons in coupled GaAs/Al0.30Ga0.70As double quantum wells separated by AlAs barriers

Kulakovskii V. D.; Tyazhlov M. G.; Dite A. F.; Filin A. I.; Forchel A.; Yakovlev D. R.; Waag A.; Landwehr G.

Interparticle interaction in spin‐aligned and spin‐degenerate exciton systems and magnetoplasmas in II‐VI quantum wells

Kulik L. V.; Kulakovskii V. D.; Bayer M.; Forchel A.; Gippius N. A.; Tikhodeev S. G.

Dielectric enhancement of excitons in near‐surface quantum wells

Steffen R.; Forchel A.; Reinecke T. L.; Koch T.; Albrecht M.; Oshinowo J.; Faller F.

Single quantum dots as local probes of electronic properties of semiconductors

Bayer M.; Reinecke T. L.; Schilling O.; Forchel A.; Knipp P. A.; Pagnod-Rossiaux Ph.; Goldstein L.

Splitting of electronic levels with positive and negative angular momenta in In0.53Ga0.47As/InP quantum dots by a magnetic field

Wang K. H.; Bayer M.; Pagnod-Rossiaux Ph.; Haug H.; Benner S.; Ils P.; Forchel A.; Goldstein L.

Subband renormalization in dense electron‐hole plasmas in In;0.53Ga0.47As/InP quantum wires

Bacher G.; Tönnies D.; Eisert D.; Forchel A.; Möller M. O.; Korn M.; Jobst B.; Hommel D.; Landwehr G.; Söllner J.; Heuken M.

Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs

Spiegel R.; Bacher G.; Herz K.; Illing M.; Kümmell T.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.; Söllner J.; Heuken M.

Excitonic lifetimes in (Zn,Cd)Se/ZnSe and ZnSe/Zn(Se,S) quantum wires

Bayer M.; Ils P.; Michel M.; Forchel A.; Reinecke T. L.; Knipp P. A.

Size dependence of the changeover from geometric to magnetic confinement in In0.53Ga0.47As/InP quantum wires

Spiegel R.; Waag A.; Litz T.; Forchel A.; Herz K.; Bacher G.; Landwehr G.

Recombination and thermal emission of excitons in shallow CdTe/Cd1-;xMgxTe quantum wells

Eisert D.; Bacher G.; Mais N.; Reithmaier J. P.; Forchel A.; Jobst B.; Hommel D.; Landwehr G.

First order gain and index coupled distributed feedback lasers in ZnSe‐based structures with finely tunable emission wavelengths

Steffen R.; Koch Th.; Oshinowo J.; Faller F.; Forchel A.

Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low‐voltage electron beam lithography

Kieslich A.; Doleschel H.; Kieseling F.; Reithmaier J. P.; Forchel A.

Reduced lateral straggling of implantation induced defects in III/V heterostructures by ion implantation along channeling directions

Kerkel K.; Oshinowo J.; Forchel A.; Weber J.; Zielinski E.

Lateral quantization effects in modulated barrier InGaAs/InP quantum wires

Bayer M.; Knipp P. A.; Faller F.; Forchel A.; Kulakovskii V. D.; Dremin A. A.; Reinecke T. L.

Coupling of geometric confinement and magnetic confinement in In0.09Ga0.91As/GaAs quantum wells in magnetic fields with varying orientations

Steffen R.; Oshinowo J.; Koch T.; Forchel A.

InGaAs/GaAs quantum wires and dots defined by low‐voltage electron‐beam lithography

Illing M.; Bacher G.; Kümmell T.; Forchel A.; Hommel D.; Jobst B.; Landwehr G.

Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching

Orth Andreas; Reithmaier Johann Peter; Faller Frank; Forchel Alfred

First‐order gain‐coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and ;insitu overgrowth

Bayer M.; Timofeev V. B.; Gutbrod T.; Forchel A.; Steffen R.; Oshinowo J.

Enhancement of spin splitting due to spatial confinement in InxGa1-;xAs quantum dots

Kieseling F.; Pagnod-Rossiaux Ph.; Reinecke T. L.; Knipp P. A.; Forchel A.; Wang K. H.; Braun W.; Goldstein L.

Barrier‐confinement‐controlled carrier transport into quantum wires

Illing M.; Bacher G.; Forchel A.; Hommel D.; Jobst B.; Landwehr G.

First order distributed feedback operation in ZnSe based laser structures

Illing M.; Bacher G.; Kümmell T.; Forchel A.; Andersson T. G.; Hommel D.; Jobst B.; Landwehr G.

Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires

Hübner B.; Zengerle R.; Forchel A.

Low power electronic optical bistability in single quantum well InP/InGaAsP Fabry–Perot waveguide resonators

Kieseling F.; Braun W.; Ils P.; Michel M.; Forchel A.; Gyuro I.; Klenk M.; Zielinski E.

Carrier lifetime in deep‐etched In;xGa1-;xAs/InP quantum wires

Bayer M.; Schmidt A.; Forchel A.; Faller F.; Reinecke T. L.; Knipp P. A.; Dremin A. A.; Kulakovskii V. D.

Electron‐Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum Dots

Illing M.; Bacher G.; Forchel A.; Litz T.; Waag A.; Landwehr G.

Photoluminescence efficiency study of wet chemically etched CdTe/Cd1-;xMgxTe wires

Dreybrodt J.; Daiminger F.; Reithmaier J. P.; Forchel A.

Dynamics of carrier‐capture processes in Ga;xIn1-;xAs/GaAs near‐surface quantum wells

Ils P.; Gréus Ch.; Forchel A.; Kulakovskii V. D.; Gippius N. A.; Tikhodeev S. G.

Linear polarization of photoluminescence emission and absorption in quantum‐well wire structures; Experiment and theory

Tönnies D.; Bacher G.; Eisert D.; Forchel A.; Waag A.; Litz Th.; Landwehr G.

Ion‐implantation induced interdiffusion in CdTe/CdMgTe quantum wells

Bayer M.; Dremin A.; Faller F.; Forchel A.; Kulakovskii V. D.; Shepel B. N.; Andersson T.

Renormalization effects in the dense neutral magnetoplasma of quantum wells with two filled subbands

Dite A. F.; Kulakovskii V. D.; Faller F.; Forchel A.

Renormalization effects in the dense electron‐hole magnetoplasma of a strained In;xGa1-;xAs/GaAs single quantum well after picosecond excitation

Kerkel K.; Oshinowo J.; Forchel A.; Weber J.; Laube G.; Gyuro I.; Zielinski E.

High‐resolution definition of buried InGaAs/InP wires by selective thermal intermixing

Hübner B.; Jacobs B.; Gréus Ch.; Zengerle R.; Forchel A.

Luminescence spectroscopy of dry etched single dots and wires

Steffen R.; Faller F.; Forchel A.

Low‐voltage electron beam lithography on GaAs substrates for quantum wire fabrication

Kieslich A.; Reithmaier J. P.; Forchel A.

Minimum feature sizes and ion beam profile for a focused ion beam system with post‐objective lens retarding and acceleration mode

Ils P.; Forchel A.; Wang K. H.; Pagnod-Rossiaux Ph.; Goldstein L.

Lateral subband transitions in the luminescence spectra of a one‐dimensional electron‐hole plasma in In;0.53Ga0.47As/InP quantum wires

Kulakovskii V. D.; Forchel A.; Pieger K.; Straka J.; Shepel B. N.; Nochevny S. V.

Exciton mixing in the magnetophotoluminescence excitation spectra of shallow strained InxGa1-;xAs/GaAs quantum wells

Daiminger F.; Dite A. F.; Tourníe E.; Ploog K.; Forchel A.

Time‐resolved investigations of excitonic recombination in highly strained InAs/Al;0.48In0.52As quantum wells

Orth A.; Reithmaier J. P.; Forchel A.; Nötzel R.; Ploog K.

Room‐temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311);A‐oriented substrates

Bayer M.; Spiegel R.; Gréus Ch.; Knipp P. A.; Reinecke T. L.; Itskevich I. E.; Forchel A.; Faller F.

Magnetic‐field‐induced breakdown of quasi‐one‐dimensional quantum‐wire quantization

Waag A.; Bacher G.; Jakobs A.; Forchel A.; Landwehr G.

Stimulated emission from a (CdMg)Te separate confinement quantum well laser

Gréus Ch.; Faller F.; Reinecke T. L.; Knipp P. A.; Spiegel R.; Forchel A.

Photoluminescence excitation study of lateral‐subband structure in barrier‐modulated In;0.09Ga0.91As quantum wires

Tönnies D.; Bacher G.; Forchel A.; Waag A.; Landwehr G.

Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing

Ils P.; Michel M.; Forchel A.; Gyuro I.; Klenk M.; Zielinski E.

Room temperature study of strong lateral quantization effects in InGaAs/InP quantum wires

Butov L. V.; Kulakovskii V. D.; Forchel A.

Spin‐splitting renormalization in the neutral dense magnetoplasma in In;xGa1-;xAs/InP quantum wells

Dreybrodt J.; Forchel A.; Reithmaier J. P.

Optical properties of Ga0.8In0.2As/GaAs surface quantum wells

Ils P.; Michel M.; Forchel A.; Gyuro I.; Klenk M.; Zielinski E.

Fabrication and optical properties of InGaAs/InP quantum wires and dots with strong lateral quantization effects

Schilling O.; Forchel A.; Kohl A.; Brittner S.

Optical analysis of quantum confined Stark effect in overgrown InGaAs/InP quantum wires

Kieslich A.; Doleschel H.; Faller F.; Forchel A.; Stoffel N. G.

Investigation of the longitudinal and lateral distribution of implantation induced damage in GaAs/InGaAs heterostructures

Oshinowo J.; Dreybrodt J.; Forchel A.; Mestres N.; Calleja J. M.; Gyuro I.; Speier P.; Zielinski E.

Photoluminescence study of implantation‐induced intermixing of In;0.53Ga0.47As/InP single quantum wells by argon ions

Hämisch Y.; Steffen R.; Forchel A.; Röntgen P.

Rapid thermal annealing induced order‐disorder transition in Ga;0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Gréus Ch.; Butov L.; Daiminger F.; Forchel A.; Knipp P. A.; Reinecke T. L.

Lateral quantization in the optical emission of barrier‐modulated wires

Hillmer H.; Forchel A.; Hansmann S.; Morohashi M.; Lopez E.; Meier H. P.; Ploog K.

Erratum: Optical investigations on the mobility of two‐dimensional excitons in GaAs/Ga;1-;xAlxAs quantum wells [Phys. Rev. B ;39, 10 901 (1989)]

Prins F. E.; Lehr G.; Fröhlich E. M.; Mayer G.; Schweizer H.; Straka J.; Forchel A.; Smith G. W.

Carrier transport into intermixed GaAs/AlGaAs quantum wires

Bickl T.; Jacobs B.; Straka J.; Forchel A.

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells

Mayer G.; Prins F. E.; Lehr G.; Schweizer H.; Leier H.; Maile B. E.; Straka J.; Forchel A.; Weimann G.

Carrier relaxation in intermixed GaAs/AlxGa1-;xAs quantum wires

Kieslich A.; Straka J.; Forchel A.

Optical study of Ar+ implantation‐induced damage in GaAs/GaAlAs heterostructures

Butov L. V.; Kulakovskii V. D.; Bauer G. E. W.; Forchel A.; Grützmacher D.

Excitons in dense two‐dimensional electron‐hole magnetoplasmas

Schmidt A.; Forchel A.; Straka J.; Gyuro I.; Speier P.; Zielinski E.

Investigation of high‐quantum efficiency InGaAs/InP and InGaAs/GaAs quantum dots

Hämisch Y.; Steffen R.; Oshinowo J.; Forchel A.; Röntgen P.

Selective order–disorder transition in GaInP/AlGaInP; A new approach for the definition of buried quantum wires

Gréus Ch.; Forchel A.; Straka J.; Pieger K.; Emmerling M.

InGaAs/GaAs quantum wires defined by lateral top barrier modulation

Oshinowo J.; Forchel A.; Grützmacher D.; Stollenwerk M.; Heuken M.; Heime K.

Photoluminescence study of interdiffusion in In0.53Ga0.47As/InP surface quantum wells

Hillmer H.; Hansmann S.; Forchel A.

Comment on ‘‘Radiative recombination processes of the many‐body states in multiple quantum wells’’

Hillmer H.; Forchel A.; Tu C. W.

Enhancement of electron‐hole pair mobilities in thin GaAs/Al;xGa1-;xAs quantum wells

Butov L. V.; Forchel A.; Lach E.; Kulakovskii V. D.; Grützmacher D.

Magnetoluminescence study of many‐body effects in homogeneous quasi‐two‐dimensional electron‐hole plasma in undoped In;xGa1-;xAs/InP single quantum wells

Gréus Ch.; Forchel A.; Straka J.; Pieger K.; Emmerling M.

High quantum efficiency InGaAs/GaAs quantum wires defined by selective wet etching

Hillmer H.; Forchel A.; Kuhn T.; Mahler G.; Meier H. P.

Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al0.5Ga0.5As double‐quantum‐well heterostructures

Bacher G.; Schweizer H.; Kovac J.; Forchel A.; Nickel H.; Schlapp W.; Lösch R.

Influence of barrier height on carrier dynamics in strained InxGa1-;xAs/GaAs quantum wells

Lambsdorff M.; Klingenstein M.; Kuhl J.; Moglestue C.; Rosenzweig J.; Axmann A.; Schneider Jo.; Hülsmann A.; Leier H.; Forchel A.

Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes

Forchel A.; Menschig A.; Maile B. E.; Leier H.; Germann R.

Transport and optical properties of semiconductor quantum wires

Rosenzweig Josef; Moglestue C.; Axmann A.; Schneider Joachim; Huelsmann Axel; Lambsdorff M.; Kuhl Juergen; Klingenstein Markus; Leier H.; Forchel Alfred W. B.

Characterization of picosecond GaAs metal-semiconductor-metal photodetectors

Korn M.; Forchel A.; Körfer T.; Roentgen P.

First order distributed feedback gratings (92.5–105 nm period) for GaInP/AlGaInP lasers emitting in the visible range

Menschig A.; Roos B.; Germann R.; Forchel A.; Pressel K.; Heuring W.; Grützmacher D.

In0.53Ga0.47As/InP quantum wires: Fabrication and magnetotransport studies

Menschig A.; Forchel A.; Roos B.; Germann R.; Pressel K.; Heuring W.; Grützmacher D.

Magnetotransport in narrow In0.53Ga0.47As/InP wires

Lach E.; Forchel A.; Broido D. A.; Reinecke T. L.; Weimann G.; Schlapp W.

Room‐temperature emission of highly excited GaAs/Ga;1-;xAlxAs quantum wells

Maile B. E.; Forchel A.; Germann R.; Straka J.; Korte L.; Thanner C.

Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires

Hillmer H.; Sauer R.; Forchel A.; Tu C. W.

Interface‐roughness‐controlled exciton mobilities in GaAs/ Al;0.37Ga0.63As quantum wells

Maile B. E.; Meier H. P.; Grützmacher D.; Germann R.; Forchel A.; Reithmaier J.-P.

Erratum: Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content [J. Vac. Sci. Technol. B ;7, 2030 (1989)]

Mayer G.; Maile B. E.; Germann R.; Forchel A.; Grambow P.; Meier H. P.

Time‐resolved investigations of sidewall recombination in dry‐etched GaAs wires

Clauss W.; Rau U.; Parisi J.; Peinke J.; Huebener R. P.; Leier H.; Forchel A.

Impact ionization avalanche breakdown in short crystal regions of p‐Ge

Leier H.; Forchel A.; Hörcher G.; Hommel J.; Bayer S.; Rothfritz H.; Weimann G.; Schlapp W.

Mass and dose dependence of ion‐implantation‐induced intermixing of GaAs/GaAlAs quantum‐well structures

Leier H.; Forchel A.; Maile B. E.; Mayer G.; Hommel J.; Weimann G.; Schlapp W.

Carrier capture in intermixed quantum wires with sharp lateral confinement

Germann R.; Forchel A.; Grützmacher D.

Optical depth profiling of ion beam etching induced damage in InGaAs/InP heterostructures

Cebulla U.; Forchel A.; Bacher G.; Grützmacher D.; Tsang W. T.; Razeghi M.

Barrier‐controlled thermalization in In;0.53Ga0.47As/InP quantum wells

Korn M.; Klingenstein M.; Germann R.; Forchel A.; Nickel H.; Schlapp W.; Lösch R.; Streubel K.; Scholz F.

High‐resolution electron beam lithography and evaluation of first‐order distributed feedback lasers

Maile B. E.; Meier H. P.; Grützmacher D.; Germann R.; Forchel A.; Reithmaier J.-P.

Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content

Germann R.; Forchel A.; Bresch M.; Meier H. P.

Energy dependence and depth distribution of dry etching‐induced damage in III/V semiconductor heterostructures

Kulakovskii V. D.; Lach E.; Forchel A.; Grützmacher D.

Band‐gap renormalization and band‐filling effects in a homogeneous electron‐hole plasma in In;0.53Ga0.47As/InP single quantum wells

Cebulla U.; Bacher G.; Forchel A.; Schmitz D.; Jürgensen H.; Razeghi M.

Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells

Capizzi M.; Coluzza C.; Frova A.; Cebulla U.; Forchel A.

Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time‐resolved luminescence

Hillmer H.; Forchel A.; Hansmann S.; Morohashi M.; Lopez E.; Meier H. P.; Ploog K.

Optical investigations on the mobility of two‐dimensional excitons in GaAs/Ga;1-;xAlxAs quantum wells

Maile B. E.; Forchel A.; Germann R.; Grützmacher D.

Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires

Cebulla U.; Bacher G.; Forchel A.; Mayer G.; Tsang W. T.

Excitonic lifetimes in thin InxGa1-;xAs/InP quantum wells

Weber J.; Molassioti A.; Moser M.; Stapor A.; Scholz F.; Hörcher G.; Forchel A.; Hammel A.; Laube G.; Weidlein J.

InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(MeCp)3

Hillmer H.; Hansmann S.; Forchel A.; Morohashi M.; Lopez E.; Meier H. P.; Ploog K.

Two‐dimensional exciton transport in GaAs/GaAlAs quantum wells

Maile B. E.; Forchel A.; Germann R.; Menschig A.; Meier H. P.; Grützmacher D.

Nanometer lithography for III–V semiconductor wires using chloromethylated poly‐α‐methylstyrene resist

Cebulla U.; Tränkle G.; Ziem U.; Forchel A.; Griffiths G.; Kroemer H.; Subbanna S.

Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple‐quantum‐well structures

Tränkle G.; Lach E.; Forchel A.; Scholz F.; Ell C.; Haug H.; Weimann G.; Griffiths G.; Kroemer H.; Subbanna S.

General relation between band‐gap renormalization and carrier density in two‐dimensional electron‐hole plasmas

Laurich B.; Hillmer H.; Forchel A.

Optical time‐of‐flight investigation of the exciton transport in silicon

Tränkle G.; Leier H.; Forchel A.; Haug H.; Ell C.; Weimann G.

Dimensionality dependence of the band‐gap renormalization in two‐ and three‐dimensional electron‐hole plasmas in GaAs

Forchel A.; Cebulla U.; Tränkle G.; Ziem U.; Kroemer H.; Subbanna S.; Griffiths G.

E0+Δ;0 transitions in GaSb/AlSb quantum wells

Forchel A.; Subbanna S.; Kroemer H.; Reinecke T. L.; Lach E.; Tränkle G.; Cebulla U.; Griffiths G.

2Eg transitions in GaSb‐AlSb quantum‐well structures

Hillmer H.; Mayer G.; Forchel A.; Löchner K. S.; Bauser E.

Optical time‐of‐flight investigation of ambipolar carrier transport in GaAlAs using GaAs/GaAlAs double quantum well structures

Scholz F.; Wiedemann P.; Benz K. W.; Tränkle G.; Lach E.; Forchel A.; Laube G.; Weidlein J.

GaInAs‐InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts

Steranka F. M.; Forchel A.; Gourley P. L.; Wolfe J. P.; Reinecke T. L.

Properties of electron‐hole liquid in highly stressed silicon

Schweizer H.; Löwenau J. P.; Schmitt-Rink S.; Hangleiter A.; Forchel A.; Haug H.

Ionization of the direct‐gap exciton in photoexcited germanium

Forchel A.; Schweizer H.; Mahler G.

Optical properties of fast‐diffusing solid‐state plasmas

Mahler G.; Forchel A.; Laurich B.; Schmid W.

Erratum: Mahler et al respond [Phys. Rev. Lett. ;49, 1744 (1982)]

Mahler G.; Forchel A.; Laurich B.; Schmid W.

Mahler et al. respond

Mahler G.; Forchel A.; Laurich B.; Schmid W.

Mahler et al. respond

Forchel A.; Laurich B.; Wagner J.; Schmid W.; Reinecke T. L.

Systematics of electron‐hole liquid condensation from studies of silicon with varying uniaxial stress

Mahler G.; Maier G.; Forchel A.; Laurich B.; Sanwald H.; Schmid W.

Thermodiffusion of high‐density electron‐hole plasmas in semiconductors

Forchel A.; Laurich B.; Moersch G.; Schmid W.; Reinecke T. L.

Experimental verification of scaling relations for electron‐hole liquid condensation