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Cho, Alfred Y.

Computed

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Research Profile

Latest Publications

1.
2007

Chen J.; Malis O.; Sergent A. M.; Sivco D. L.; Weimann N.; Cho A. Y.

In0.68Ga0.32As/;Al0.64In0.36As/;InP4.5 μ;m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 913 (2007)
Bell Laboratories, Alcatel-Lucent, 600 Mountain Ave., Murray Hill, New Jersey 07974
2.
2006

Belkin Mikhail A.; Troccoli Mariano; Diehl Laurent; Capasso Federico; Belyanin Alexey A.; Sivco Deborah L.; Cho Alfred Y.

Quasiphase matching of second-harmonic generation in quantum cascade lasers by Stark shift of electronic resonances
Appl. Phys. Lett. 88, 201108 (2006)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
3.
2006

Diez E.; Chen Y. P.; Avesque S.; Hilke M.; Peled E.; Shahar D.; Cerveró J. M.; Sivco D. L.; Cho A. Y.

Two-dimensional electron gas in InGaAs/;InAlAs quantum wells
Appl. Phys. Lett. 88, 052107 (2006)
Departamento de Física Fundamental, Universidad de Salamanca, 37008 Salamanca, Spain;

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All Publications

1.
2007

Chen J.; Malis O.; Sergent A. M.; Sivco D. L.; Weimann N.; Cho A. Y.

In0.68Ga0.32As/;Al0.64In0.36As/;InP4.5 μ;m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 913 (2007)
Bell Laboratories, Alcatel-Lucent, 600 Mountain Ave., Murray Hill, New Jersey 07974
2.
2006

Belkin Mikhail A.; Troccoli Mariano; Diehl Laurent; Capasso Federico; Belyanin Alexey A.; Sivco Deborah L.; Cho Alfred Y.

Quasiphase matching of second-harmonic generation in quantum cascade lasers by Stark shift of electronic resonances
Appl. Phys. Lett. 88, 201108 (2006)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
3.
2006

Diez E.; Chen Y. P.; Avesque S.; Hilke M.; Peled E.; Shahar D.; Cerveró J. M.; Sivco D. L.; Cho A. Y.

Two-dimensional electron gas in InGaAs/;InAlAs quantum wells
Appl. Phys. Lett. 88, 052107 (2006)
Departamento de Física Fundamental, Universidad de Salamanca, 37008 Salamanca, Spain;
4.
2005

Zhang H. L.; Peng C.; Seetharaman A.; Luo G. P.; Le Han Q.; Gmachl C.; Sivco D. L.; Cho A. Y.

External-cavity tunable mid-infrared laser using off-band surface-emitting Bragg grating coupler
Appl. Phys. Lett. 86, 111112 (2005)
Photonic Device and System Laboratory, Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204-4005
5.
2005

Pascual Winter M. F.; Fainstein A.; Trigo M.; Eckhause T.; Merlin R.; Cho A.; Chen J.

InP acoustic cavity phonon spectra probed by Raman scattering
Phys. Rev. B 71, 085305 (2005)
Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 S. C. de Bariloche, Río Negro, Argentina;
6.
2004

Mosely Trinesha S.; Belyanin Alexey; Gmachl Claire; Sivco Deborah L.; Peabody Milton L.; Cho Alfred Y.

Third harmonic generation in a Quantum Cascade laser with monolithically integrated resonant optical nonlinearity
Opt. Express 12, 2972 (2004)
7.
2004

Peled E.; Chen Y.; Diez E.; Tsui D. C.; Shahar D.; Sivco D. L.; Cho A. Y.

Symmetries of the resistance of mesoscopic samples in the quantum Hall regime
Phys. Rev. B 69, 241305 (2004)
Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100, Israel
8.
2004

Srinivasan Kartik; Painter Oskar; Colombelli Raffaele; Gmachl Claire; Tennant Donald M.; Sergent A. Michael; Sivco Deborah L.; Cho Alfred Y.; Troccoli Mariano; Capasso Federico

Lasing mode pattern of a quantum cascade photonic crystal surface-emitting microcavity laser
Appl. Phys. Lett. 84, 4164 (2004)
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125;
9.
2004

Srinivasan Kartik; Chen Jianxin; Painter Oskar; Barclay Paul E.; Cho Alfred Y.

Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes
J. Vac. Sci. Technol. B 22, 875 (2004)
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125;
10.
2004

Gmachl C.; Owschimikow N.; Belyanin A.; Sergent A. M.; Sivco D. L.; Peabody M. L.; Cho A. Y.; Capasso F.

Temperature dependence and single-mode tuning behavior of second-harmonic generation in quantum cascade lasers
Appl. Phys. Lett. 84, 2751 (2004)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey
11.
2004

Malis Oana; Belyanin Alexey; Gmachl Claire; Sivco Deborah L.; Peabody Milton L.; Sergent A. Michael; Cho Alfred Y.

Improvement of second-harmonic generation in quantum-cascade lasers with true phase matching
Appl. Phys. Lett. 84, 2721 (2004)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
12.
2004

Guo Bujin; Wang Y.; Peng C.; Zhang H. L.; Luo G. P.; Le H. Q.; Gmachl C.; Sivco D. L.; Peabody M. L.; Cho A. Y.

Laser‐based mid‐infrared reflectance imaging of biological tissues
Opt. Express 12, 208 (2004)
University of Houston
13.
2003

Peled E.; Shahar D.; Chen Y.; Diez E.; Sivco D. L.; Cho A. Y.

Near-Perfect Correlation of the Resistance Components of Mesoscopic Samples at the Quantum Hall Regime
Phys. Rev. Lett. 91, 236802 (2003)
14.
2003

Troccoli Mariano; Chen Cheng-Hsuan; Sivco Deborah L.; Gmachl Claire; Peabody Milton L.; Chen Jianxin; Capasso Federico; Cho Alfred Y.

Midinfrared electroluminescence in quantum cascade structures with InP/InGaAs active regions
J. Appl. Phys. 94, 7101 (2003)
Division of Engineering and Applied Sciences, Harvard University, 310 Cruft Laboratory, 19 Oxford Street, Cambridge, Massachusetts 02138;
15.
2003

Tennant D. M.; Sivco D. L.; Sergent A. M.; Capasso F.; Gmachl C.; Painter O.; Troccoli M.; Srinivasan K.; Colombelli R.; Cho A. Y.

Fabrication methods for a quantum cascade photonic crystal surface emitting laser
J. Vac. Sci. Technol. B 21, 2907 (2003)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974;
16.
2003

Lerttamrab M.; Chuang S. L.; Gmachl C.; Sivco D. L.; Capasso F.; Cho A. Y.

Linewidth enhancement factor of a type-I quantum-cascade laser
J. Appl. Phys. 94, 5426 (2003)
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801;
17.
2003

Srinivasan Kartik; Barclay Paul E.; Painter Oskar; Chen Jianxin; Cho Alfred Y.; Gmachl Claire

Experimental demonstration of a high quality factor photonic crystal microcavity
Appl. Phys. Lett. 83, 1915 (2003)
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125;
18.
2003

Soibel Alex; Gmachl Claire; Sivco Deborah L.; Peabody Milton L.; Sergent A. Michael; Cho Alfred Y.; Capasso Federico

Optimization of broadband quantum cascade lasers for continuous wave operation
Appl. Phys. Lett. 83, 24 (2003)
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, New Jersey 07974;
19.
2003

Peled E.; Shahar D.; Chen Y.; Sivco D. L.; Cho A. Y.

Observation of a Quantized Hall Resistivity in the Presence of Mesoscopic Fluctuations
Phys. Rev. Lett. 90, 246802 (2003)
Department of Condensed Matter Physics, Weizmann Institute, Rehovot 76100, Israel
20.
2003

Owschimikow Nina; Gmachl Claire; Belyanin Alexey; Kocharovsky Vitaly; Sivco Deborah L.; Colombelli Raffaele; Capasso Federico; Cho Alfred Y.

Resonant Second-Order Nonlinear Optical Processes in Quantum Cascade Lasers
Phys. Rev. Lett. 90, 043902 (2003)
21.
2002

Taubman Matthew S.; Myers Tanya L.; Cannon Bret D.; Williams Richard M.; Capasso Federico; Gmachl Claire; Sivco Deborah L.; Cho Alfred Y.

Frequency stabilization of quantum‐cascade lasers by use of optical cavities
Opt. Lett. 27, 2164 (2002)
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352
22.
2002

Gmachl Claire; Sivco Deborah L.; Soibel Alex; Colombelli Raffaele; Capasso Federico; Cho Alfred Y.

Ultrabroadband Quantum Cascade Lasers
Opt. Photon. News 13, 23 (2002)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
23.
2002

Heber J. D.; Gmachl C.; Ng H. M.; Cho A. Y.

Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μ;m wavelength in GaN/AlGaN heterostructures
Appl. Phys. Lett. 81, 1237 (2002)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
24.
2002

Spagnolo Vincenzo; Scamarcio Gaetano; Troccoli Mariano; Capasso Federico; Gmachl Claire; Sergent A. Michael; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers
Appl. Phys. Lett. 80, 4303 (2002)
Dipartimento Interateneo di Fisica, INFM, Università e Politecnico di Bari, via Amendola 173, 70126 Bari, Italy;
25.
2002

Vaschenko G.; Patel D.; Menoni C. S.; Ng H. M.; Cho A. Y.

Nonlinear macroscopic polarization in GaN/AlxGa1-x;N quantum wells
Appl. Phys. Lett. 80, 4211 (2002)
Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, Colorado 80523;
26.
2002

Troccoli Mariano; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Mid-infrared (λ≈7.4 μm) quantum cascade laser amplifier for high power single-mode emission and improved beam quality
Appl. Phys. Lett. 80, 4103 (2002)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
27.
2002

Weber W. H.; Remillard J. T.; Chase R. E.; Richert J. F.; Capasso F.; Gmachl C.; Hutchinson A. L.; Sivco D. L.; Baillargeon J. N.; Cho A. Y.

Using a Wavelength‐Modulated Quantum Cascade Laser to Measure NO Concentrations in the Parts‐per‐Billion Range for Vehicle Emissions Certification
Appl. Spectrosc. 56, 706 (2002)
Physical and Environmental Sciences Department, Ford Research Laboratory, MD‐3083/SRL, Dearborn, Michigan 48121‐2053;
28.
2002

Gmachl Claire; Narimanov Evgueni E.; Capasso Federico; Baillargeon James N.; Cho Alfred Y.

Kolmogorov‐Arnold‐Moser transition and laser action on scar modes in semiconductor diode lasers with deformed resonators
Opt. Lett. 27, 824 (2002)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974
29.
2002

Capasso Federico; Gmachl Claire; Sivco Deborah L.; Cho Alfred Y.

Quantum Cascade Lasers
Phys. Today 55, 34 (2002)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
30.
2002

Hong M.; Kwo J.; Chu S. N. G.; Mannaerts J. P.; Kortan A. R.; Ng H. M.; Cho A. Y.; Anselm K. A.; Lee C. M.; Chyi J. I.

Single-crystal GaN/Gd2O3/GaN heterostructure
J. Vac. Sci. Technol. B 20, 1274 (2002)
Agere Systems, Inc., Murray Hill, New Jersey 07974
31.
2002

Ng H. M.; Cho A. Y.

Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy
J. Vac. Sci. Technol. B 20, 1217 (2002)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
32.
2002

Unterrainer Karl; Colombelli Raffaele; Gmachl Claire; Capasso Federico; Hwang Harold Y.; Sergent A. Michael; Sivco Deborah L.; Cho Alfred Y.

Quantum cascade lasers with double metal-semiconductor waveguide resonators
Appl. Phys. Lett. 80, 3060 (2002)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
33.
2002

Straub Axel; Mosely Trinesha S.; Gmachl Claire; Colombelli Raffaele; Troccoli Mariano; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Threshold reduction in quantum cascade lasers with partially undoped, dual-wavelength interdigitated cascades
Appl. Phys. Lett. 80, 2845 (2002)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
34.
2002

Gagliardi Gianluca; Hutchinson Albert L.; Baillargeon James N.; Sivco Deborah L.; Capasso Federico; Gmachl Claire; De Natale Paolo; Inguscio Massimo; Viciani Silvia; Cho Alfred Y.

Generation of tunable far‐infrared radiation with a quantum cascade laser
Opt. Lett. 27, 521 (2002)
European Laboratory for Non‐Linear Spectroscopy and Istituto Nazionale per la Fisica della Materia, University of Florence, Largo E. Fermi 2, 50125 Florence, Italy;
35.
2002

Kosterev Anatoliy A.; Tittel Frank K.; Köhler Rüdeger; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.; Wehe Shawn; Allen Mark G.

Thermoelectrically cooled quantum‐cascade‐laser‐based sensor for the continuous monitoring of ambient atmospheric carbon monoxide
Appl. Opt. 41, 1169 (2002)
Rice Quantum Institute, Rice University, Houston, Texas 77251‐1892;
36.
2002

Myers T. L.; Williams R. M.; Taubman M. S.; Gmachl C.; Capasso F.; Sivco D. L.; Baillargeon J. N.; Cho A. Y.

Free‐running frequency stability of mid‐infrared quantum cascade lasers
Opt. Lett. 27, 170 (2002)
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352
37.
2002

Kosterev Anatoliy A.; Curl Robert F.; Tittel Frank K.; Köhler Rüdeger; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Transportable automated ammonia sensor based on a pulsed thermoelectrically cooled quantum‐cascade distributed feedback laser
Appl. Opt. 41, 573 (2002)
Rice Quantum Institute, Rice University, Houston, Texas 77251‐1892;
38.
2001

Gmachl Claire; Sivco Deborah L.; Colombelli Raffaele; Capasso Federico; Mosely Trinesha S.; Straub Axel; Baillargeon James N.; Cho Alfred Y.

Quantum-cascade lasers with heterogeneous cascades: Multiple‐wavelength operation
Opt. Photon. News 12, 24 (2001)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
39.
2001

Kosterev Anatoliy A.; Malinovsky Alexander L.; Tittel Frank K.; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.

Cavity ringdown spectroscopic detection of nitric oxide with a continuous-wave quantum-cascade laser
Appl. Opt. 40, 5522 (2001)
Rice Quantum Institute, Rice University, Houston, Texas 77251-1892;
40.
2001

Paiella Roberto; Martini Rainer; Capasso Federico; Gmachl Claire; Hwang Harold Y.; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.; Whittaker Edward A.; Liu H. C.

High-frequency modulation without the relaxation oscillation resonance in quantum cascade lasers
Appl. Phys. Lett. 79, 2526 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
41.
2001

Gmachl Claire; Ng Hock M.; Cho Alfred Y.

Intersubband absorption in degenerately doped GaN/AlxGa1-x;N coupled double quantum wells
Appl. Phys. Lett. 79, 1590 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
42.
2001

Gmachl Claire; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Capasso Federico; Cho Alfred Y.

Quantum cascade lasers with a heterogeneous cascade: Two-wavelength operation
Appl. Phys. Lett. 79, 572 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
43.
2001

Wanke Michael C.; Capasso Federico; Gmachl Claire; Tredicucci Alessandro; Sivco Deborah L.; Hutchinson Albert L.; Chu S.-N. George; Cho Alfred Y.

Injectorless quantum-cascade lasers
Appl. Phys. Lett. 78, 3950 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
44.
2001

Martini Rainer; Gmachi Claire; Tredicucci Alessandro; Capasso Federico; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.; Whittaker Edward A.

High duty cycle operation of quantum cascade lasers based on graded superlattice active regions
J. Appl. Phys. 89, 7735 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
45.
2001

Capasso Federico; Colombelli Raffaele; Paiella Roberto; Gmachl Claire; Tredicucci Alessandro; Sivco Deborah L.; Cho Alfred Y.

Far-infrared and ultra-high-speed quantum-cascade lasers
Opt. Photon. News 12, 40 (2001)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
46.
2001

Colombelli Raffaele; Capasso Federico; Gmachl Claire; Hutchinson Albert L.; Sivco Deborah L.; Tredicucci Alessandro; Wanke Michael C.; Sergent A. Michael; Cho Alfred Y.

Far-infrared surface-plasmon quantum-cascade lasers at 21.5 μm and 24 μm wavelengths
Appl. Phys. Lett. 78, 2620 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
47.
2001

Spagnolo Vincenzo; Troccoli Mariano; Scamarcio Gaetano; Gmachl Claire; Capasso Federico; Tredicucci Alessandro; Sergent A. Michael; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence
Appl. Phys. Lett. 78, 2095 (2001)
INFM, Dipartimento Interateneo di Fisica, Università e Politecnico di Bari, via Amendola 173, 70126 Bari, Italy;
48.
2001

Sonnenfroh David M.; Rawlins W. Terry; Allen Mark G.; Gmachl Claire; Capasso Federico; Hutchinson Albert L.; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

Application of balanced detection to absorption measurements of trace gases with room-temperature, quasi-cw quantum-cascade lasers
Appl. Opt. 40, 812 (2001)
Physical Sciences, Inc., 20 New England Business Center, Andover, Massachusetts 01810
49.
2001

Webster Christopher R.; Flesch Gregory J.; Scott David C.; Swanson James E.; May Randy D.; Woodward W. Stephen; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.

Quantum-cascade laser measurements of stratospheric methane and nitrous oxide
Appl. Opt. 40, 321 (2001)
Jet Propulsion Laboratory, MS 183 401, 4800 Oak Grove Drive, Pasadena, California 91109-8001
50.
2001

Ng H. M.; Chu S. N. G.; Cho A. Y.

Insitu determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells
J. Vac. Sci. Technol. A 19, 292 (2001)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
51.
2000

Kosterev Anatoliy A.; Tittel Frank K.; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.

Trace-gas detection in ambient air with a thermoelectrically cooled, pulsed quantum-cascade distributed feedback laser
Appl. Opt. 39, 6866 (2000)
Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
52.
2000

Colombelli Raffaele; Capasso Federico; Gmachl Claire; Tredicucci Alessandro; Sergent A. Michael; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

Intersubband electroluminescence from long-side-cleaved quantum-cascade lasers above threshold: Investigation of phonon bottleneck effects
Appl. Phys. Lett. 77, 3893 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
53.
2000

Gmachl Claire; Ng Hock M.; George Chu S.-N.; Cho Alfred Y.

Intersubband absorption at λ∼1.55 μ;m in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
Appl. Phys. Lett. 77, 3722 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
54.
2000

Paiella Roberto; Capasso Federico; Gmachl Claire; Bethea Clyde G.; Hwang Harold Y.; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.; Liu H. C.

LASERS Gain switching and active mode locking of mid-infrared quantum cascade lasers
Opt. Photon. News 11, 22 (2000)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
55.
2000

Tredicucci Alessandro; Gmachl Claire; Wanke Michael C.; Capasso Federico; Hutchinson Albert L.; Sivco Deborah L.; Chu Sung-Nee G.; Cho Alfred Y.

Surface plasmon quantum cascade lasers at λ∼19 μ;m
Appl. Phys. Lett. 77, 2286 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
56.
2000

Troccoli Mariano; Scamarcio Gaetano; Spagnolo Vincenzo; Tredicucci Alessandro; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.; Striccoli Marinella

Electronic distribution in superlattice quantum cascade lasers
Appl. Phys. Lett. 77, 1088 (2000)
INFM, Dipartimento Interateneo di Fisica, Università e Politecnico di Bari, via Amendola 173, 70126 Bari, Italy;
57.
2000

Kosterev Anatoliy A.; Curl Robert F.; Tittel Frank K.; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.

Effective utilization of quantum-cascade distributed-feedback lasers in absorption spectroscopy
Appl. Opt. 39, 4425 (2000)
Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
58.
2000

Gittins C. M.; Wetjen E. T.; Gmachl C.; Capasso F.; Hutchinson A. L.; Sivco D. L.; Baillargeon J. N.; Cho A. Y.

Quantitative gas sensing by backscatter-absorption measurements of a pseudorandom code modulated λ ∼ ;8-μ ;m quantum cascade laser
Opt. Lett. 25, 1162 (2000)
Physical Sciences, Inc., 20 New England Business Center, Andover, Massachusetts 01810
59.
2000

Gmachl Claire; Ng Hock M.; Cho Alfred Y.

Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μ;m
Appl. Phys. Lett. 77, 334 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
60.
2000

Paiella Roberto; Capasso Federico; Gmachl Claire; Hwang Harold Y.; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.; Liu H. C.

Monolithic active mode locking of quantum cascade lasers
Appl. Phys. Lett. 77, 169 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
61.
2000

Paldus B. A.; Harb C. C.; Spence T. G.; Zare R. N.; Gmachl C.; Capasso F.; Sivco D. L.; Baillargeon J. N.; Hutchinson A. L.; Cho A. Y.

Cavity ringdown spectroscopy using mid-infrared quantum-cascade lasers
Opt. Lett. 25, 666 (2000)
Informed Diagnostics, Inc., Suite I, 1050 Duane Avenue, Sunnyvale, California 94086-2626
62.
2000

Hong M.; Anselm K. A.; Kwo J.; Ng H. M.; Baillargeon J. N.; Kortan A. R.; Mannaerts J. P.; Cho A. Y.; Lee C. M.; Chyi J. I.; Lay T. S.

Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes
J. Vac. Sci. Technol. B 18, 1453 (2000)
Bell Labs, Lucent Technologies, Murray Hill, New Jersey
63.
2000

Tredicucci Alessandro; Gmachl Claire; Capasso Federico; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

Single-mode surface-plasmon laser
Appl. Phys. Lett. 76, 2164 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
64.
2000

Köhler Rüdeger; Gmachl Claire; Tredicucci Alessandro; Capasso Federico; Sivco Deborah L.; Chu S. N. George; Cho Alfred Y.

Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at λ≅4.6–4.7 μ;m
Appl. Phys. Lett. 76, 1092 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
65.
2000

Gmachl Claire; Capasso Federico; Tredicucci Alessandro; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.

High-power, continuous-wave, current-tunable, single-mode quantum-cascade distributed-feedback lasers at λ ; ≅ 5.2 and ;λ ; ≅ 7.95 ;μ ;m
Opt. Lett. 25, 230 (2000)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974
66.
1999

Williams Richard M.; Kelly James F.; Hartman John S.; Sharpe Steven W.; Taubman Matthew S.; Hall John L.; Capasso Federico; Gmachl Claire; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

Kilohertz linewidth from frequency-stabilized mid-infrared quantum cascade lasers
Opt. Lett. 24, 1844 (1999)
Pacific Northwest National Laboratory, MS K5-25, P.O. Box 999, Richland, Washington 99352
67.
1999

Kosterev A. A.; Curl R. F.; Tittel F. K.; Gmachl C.; Capasso F.; Sivco D. L.; Baillargeon J. N.; Hutchinson A. L.; Cho A. Y.

Methane concentration and isotopic composition measurements with a mid-infrared quantum-cascade laser
Opt. Lett. 24, 1762 (1999)
Rice Quantum Institute, Rice University, Houston, Texas 77251-1892
68.
1999

Paiella Roberto; Capasso Federico; Gmachl Claire; Bethea Clyde G.; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Cho Alfred Y.

High-speed operation of gain-switched midinfrared quantum cascade lasers
Appl. Phys. Lett. 75, 2536 (1999)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
69.
1999

Capasso Federico; Gmachl Claire; Tredicucci Alessandro; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

High performance quantum cascade lasers
Opt. Photon. News 10, 31 (1999)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
70.
1999

Paldus B. A.; Spence T. G.; Zare R. N.; Oomens J.; Harren F. J. M.; Parker D. H.; Gmachl C.; Cappasso F.; Sivco D. L.; Baillargeon J. N.; Hutchinson A. L.; Cho A. Y.

Photoacoustic spectroscopy using quantum-cascade lasers
Opt. Lett. 24, 178 (1999)
Department of Chemistry, Stanford University, Stanford, California 94305-5080
71.
1999

Tredicucci Alessandro; Gmachl Claire; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Long wavelength superlattice quantum cascade lasers at λ;≃;17 μm
Appl. Phys. Lett. 74, 638 (1999)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974;
72.
1998

Gmachl Claire; Capasso Federico; Tredicucci Alessandro; Sivco Deborah L.; Hutchinson Albert L.; Chu S. N. George; Cho Alfred Y.

Noncascaded intersubband injection lasers at λ≈7.7 μ;m
Appl. Phys. Lett. 73, 3830 (1998)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
73.
1998

Bolton Sarah; Sucha Gregg; Chemla Daniel; Sivco D. L.; Cho A. Y.

Effects of confinement on carrier dynamics in In0.47Ga0.53As heterostructures
Phys. Rev. B 58, 16326 (1998)
Department of Physics, University of California, Berkeley, California 94720;
74.
1998

Cinelli Riccardo A. G.; Piazza Vincenzo; De Franceschi Silvano; Lazzarino Marco; Beltram Fabio; Sivco Deborah L.; Cho Alfred Y.

Hole-assisted Zener magnetotunneling in heterostructures
Appl. Phys. Lett. 73, 3553 (1998)
Scuola Normale Superiore and INFM, I-56126 Pisa, Italy;
75.
1998

Gmachl Claire; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.; Narimanov E. E.; Stone A. Douglas; Nöckel Jens U.; Faist Jérome

Microlasers with chaotic resonators and bow-tie lasers
Opt. Photon. News 9, 26 (1998)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
76.
1998

Tredicucci Alessandro; Capasso Federico; Gmachl Claire; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

High performance interminiband quantum cascade lasers with graded superlattices
Appl. Phys. Lett. 73, 2101 (1998)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
77.
1998

Sharpe S. W.; Kelly J. F.; Hartman J. S.; Gmachl C.; Capasso F.; Sivco D. L.; Baillargeon J. N.; Cho A. Y.

High-resolution (Doppler-limited) spectroscopy using quantum-cascade distributed-feedback lasers
Opt. Lett. 23, 1396 (1998)
Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99532
78.
1998

Sirtori Carlo; Hutchinson Albert L.; Sivco Deborah L.; Faist Jérôme; Capasso Federico; Gmachl Claire; Cho Alfred Y.

Long-wavelength (λ≈8–11.5 μ;m) semiconductor lasers with waveguides based on surface plasmons
Opt. Lett. 23, 1366 (1998)
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974
79.
1998

Tredicucci Alessandro; Capasso Federico; Gmachl Claire; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Multiple wavelength mid-IR lasers operating on inter-miniband transitions
Opt. Photon. News 9, 64 (1998)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
80.
1998

Gmachl Claire; Tredicucci Alessandro; Capasso Federico; Hutchinson Albert L.; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

High-power λ≈8 μ;m quantum cascade lasers with near optimum performance
Appl. Phys. Lett. 72, 3130 (1998)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974;
81.
1998

Tredicucci Alessandro; Capasso Federico; Gmachl Claire; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.; Faist Jérôme; Scamarcio Gaetano

High-power inter-miniband lasing in intrinsic superlattices
Appl. Phys. Lett. 72, 2388 (1998)
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974;
82.
1998

Hwang W.-Y.; Baillargeon J. N.; Chu S. N. G.; Sciortino P. F.; Cho A. Y.

GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy
J. Vac. Sci. Technol. B 16, 1422 (1998)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974;
83.
1998

Gmachl Claire; Capasso Federico; Faist Jérôme; Hutchinson Albert L.; Tredicucci Alessandro; Sivco Deborah L.; Baillargeon James N.; Chu S. N. George; Cho Alfred Y.

Continuous-wave and high-power pulsed operation of index-coupled distributed feedback quantum cascade laser at λ≈8.5 μ;m
Appl. Phys. Lett. 72, 1430 (1998)
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974;
84.
1998

Sirtori Carlo; Tredicucci Alessandro; Capasso Federico; Faist Jérôme; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Dual-wavelength emission from optically cascaded intersubband transitions
Opt. Lett. 23, 463 (1998)
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
85.
1998

Scamarcio Gaetano; Capasso Federico; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

Midinfrared emission from coupled Wannier-Stark ladders in semiconductor superlattices
Phys. Rev. B 57, R6811 (1998)
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974;
86.
1998

Faist Jérôme; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

Short wavelength (λ∼3.4 μ;m) quantum cascade laser based on strained compensated InGaAs/AlInAs
Appl. Phys. Lett. 72, 680 (1998)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974;
87.
1998

Namjou K.; Cai S.; Whittaker E. A.; Faist J.; Gmachl C.; Capasso F.; Sivco D. L.; Cho A. Y.

Sensitive absorption spectroscopy with a room-temperature distributed-feedback quantum-cascade laser
Opt. Lett. 23, 219 (1998)
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
88.
1997

Gmachl Claire; Faist Jérôme; Capasso Federico; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

Quantum cascade distributed feedback laser
Opt. Photon. News 8, 23 (1997)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
89.
1997

Gmachl Claire; Faist Jérôme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

Distributed feedback quantum cascade lasers
Opt. Photon. News 8, 48 (1997)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
90.
1997

Faist Jérôme; Gmachl Claire; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

Erratum: “Distributed feedback quantum cascade lasers” [Appl. Phys. Lett. ;70, 2670 (1997)]
Appl. Phys. Lett. 71, 986 (1997)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
91.
1997

Bolton S. R.; Bar-Ad S.; Sucha G.; Chemla D. S.; Sivco D. L.; Cho A. Y.

Effect of confinement on energy-dependent dephasing in heterostructures
Phys. Rev. B 55, 15768 (1997)
Department of Physics, University of California, Berkeley, California 94720
92.
1997

Faist Jérome; Gmachl Claire; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Baillargeon James N.; Cho Alfred Y.

Distributed feedback quantum cascade lasers
Appl. Phys. Lett. 70, 2670 (1997)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
93.
1997

Faist Jerome; Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

Mid-IR room temperature quantum cascade lasers
Proc. SPIE Int. Soc. Opt. Eng. 3001, 264 (1997)
Lucent Technologies Bell Labs. (USA)
94.
1997

Rommel Sean L.; Erby David N.; Gao Wei; Berger Paul R.; Zydzik George J.; Rhodes W. W.; O'Bryan H. M.; Sivco Deborah L.; Cho Alfred Y.

Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes
Proc. SPIE Int. Soc. Opt. Eng. 2999, 86 (1997)
Univ. of Delaware (USA)
95.
1997

Scamarcio Gaetano; Capasso Federico; Faist Jerome; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Tunable interminiband infrared emission in superlattice electron transport
Appl. Phys. Lett. 70, 1796 (1997)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
96.
1997

Lin Lih-Yuan; Wu Ming C.; Itoh Tatsuo; Vang Timothy A.; Muller Richard E.; Sivco Deborah L.; Cho Alfred Y.

High-power high-speed velocity-matched distributed photodetectors
Proc. SPIE Int. Soc. Opt. Eng. 3006, 96 (1997)
Univ. of California/Los Angeles (USA)
97.
1996

Faist Jérôme; Capasso Federico; Sitori Carlo; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

Room temperature, mid‐infrared quantum cascade lasers
Opt. Photon. News 7, 38 (1996)
Bell Laboratories‐Lucent Technologies, Murray Hill, New Jersey;
98.
1996

Sirtori C.; Faist J.; Capasso F.; Sivco D. L.; Hutchinson A. L.; Cho A. Y.

Long wavelength infrared (λ☒11 μm) quantum cascade lasers
Appl. Phys. Lett. 69, 2810 (1996)
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
99.
1996

Faist Jerôme; Gmachl Claire; Striccoli Marinella; Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Quantum cascade disk lasers
Appl. Phys. Lett. 69, 2456 (1996)
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
100.
1996

Ghenim Lamya; Sivco D. L.; Cho A. Y.; Hill G.

Conductance fluctuations in a double‐barrier resonant‐tunneling structure with three‐dimensional electrodes
Phys. Rev. B 54, 11479 (1996)
Laboratoire de Physique des Solides (ERS/CNRS 111), Université Paul Sabatier, 31062 Toulouse Cedex, France;
101.
1996

Faist Jérôme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Baillargeon James N.; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature
Appl. Phys. Lett. 68, 3680 (1996)
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
102.
1996

Baillargeon J. N.; Cho A. Y.; Cheng K. Y.

Incorporation of arsenic and phosphorus in GaxIn1-;xAsyP1-;y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells
J. Appl. Phys. 79, 7652 (1996)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
103.
1996

Baillargeon J. N.; Cheng K. Y.; Cho A. Y.; Chu S. N. G.

All solid source molecular beam epitaxy growth of GaxIn1-;xAsyP1-;y/InP lasers using phosphorus and arsenic valved cracking cells
J. Vac. Sci. Technol. B 14, 2244 (1996)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
104.
1996

Faist Jerome; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

Continuous-wave quantum cascade lasers in the 4- to 10-um wavelength region
Proc. SPIE Int. Soc. Opt. Eng. 2682, 198 (1996)
AT&T Bell Labs. (USA);
105.
1996

Faist Jéröme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Erratum: ‘‘Continuous wave operation of a vertical transition quantum cascade laser above ;T=80 K’’ [Appl. Phys. Lett. ;67, 3057 (1995)]
Appl. Phys. Lett. 68, 2024 (1996)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
106.
1996

Sirtori Carlo; Faist Jérôme; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Chu S. N. George; Cho Alfred Y.

Continuous wave operation of midinfrared (7.4–8.6 μm) quantum cascade lasers up to 110 K temperature
Appl. Phys. Lett. 68, 1745 (1996)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
107.
1996

Frankel Michael Y.; Belenky Gregory L.; Luryi Serge; Carruthers Thomas F.; Dennis Michael L.; Cho Alfred Y.; Hamm R. A.; Sivco Deborah L.

Carrier dynamics and photodetection in charge injection transistors
J. Appl. Phys. 79, 3312 (1996)
CODE 5670, Naval Research Laboratory, Washington, DC 20375‐5338;
108.
1996

Scamarcio Gaetano; Capasso Federico; Hutchinson Albert L.; Tanbun-Ek Tawee; Sivco Deborah; Cho Alfred Y.

Narrow‐band electroluminescence at 3.5 μm from impact excitation and ionization of Fe;2+ ions in InP
Appl. Phys. Lett. 68, 1374 (1996)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
109.
1996

Faist Jérôme; Hybertsen Mark S.; Hutchinson Albert L.; Sivco Deborah L.; Sirtori Carlo; Capasso Federico; Cho Alfred Y.

Quantum cascade lasers without intersubband population inversion
Phys. Rev. Lett. 76, 411 (1996)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974‐0636;
110.
1996

Dutta Niloy K.; Nichols Doyle T.; Vakhshoori Daryoosh; Sivco Deborah L.; Cho Alfred Y.

Digital transmission link using surface-emitting lasers and photoreceivers
Proc. SPIE Int. Soc. Opt. Eng. 2695, 251 (1996)
AT&T Bell Labs. (USA);
111.
1995

Faist Jérôme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Quantum cascade laser with a vertical transition and an electron Bragg reflector
Opt. Photon. News 6, 10 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey;
112.
1995

Faist Jérôme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Continuous wave operation of a vertical transition quantum cascade laser above T=80 K
Appl. Phys. Lett. 67, 3057 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
113.
1995

Baillargeon J. N.; Cheng K. Y.; Cho A. Y.

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells
Appl. Phys. Lett. 67, 2960 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey, 07974;
114.
1995

Dutta N. K.; Nichols D. T.; Vakhshoori D.; Sivco D. L.; Cho A. Y.

Digital transmission link using surface emitting lasers and photoreceivers
Appl. Phys. Lett. 67, 588 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
115.
1995

Gao Wei; Berger Paul R.; Hunsperger Robert G.; Zydzik G.; Rhodes W. W.; O'Bryan H. M.; Sivco D.; Cho A. Y.

Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy
Appl. Phys. Lett. 66, 3471 (1995)
University of Delaware, Department of Electrical Engineering, Newark, Delaware 19716
116.
1995

Sirtori Carlo; Faist Jerome; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Quantum cascade laser with plasmon‐enhanced waveguide operating at 8.4 μm wavelength
Appl. Phys. Lett. 66, 3242 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
117.
1995

Nogaret A.; Maude D. K.; Portal J. C.; Maldonado M. A.; Martin K. P.; Carnahan R. E.; Higgins R. J.; Lee H.; Cho A. Y.

Influence of electrode Fermi energy on interband tunneling
Phys. Rev. B 51, 13198 (1995)
Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, 31077 Toulouse Cedex, France;
118.
1995

Tu L. W.; Schubert E. F.; Wang Y. H.; Weir B. E.; Zydzik G. J.; Cho A. Y.

Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers
Appl. Phys. Lett. 66, 2315 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
119.
1995

Mastrapasqua M.; Berthold G.; Canali C.; Luryi S.; Zanoni E.; Manfredi M.; Sivco D. L.; Cho A. Y.

Hot electron luminescence in In0.53Ga0.47As transistor channel
Appl. Phys. Lett. 66, 1376 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
120.
1995

Baillargeon J. N.; Cho A. Y.

Molecular‐beam epitaxial growth of Ga;xIn1-;xP–GaAs (;x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cells
J. Vac. Sci. Technol. B 13, 736 (1995)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
121.
1995

Faist Jérôme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Vertical transition quantum cascade laser with Bragg confined excited state
Appl. Phys. Lett. 66, 538 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
122.
1995

Sirtori Carlo; Capasso Federico; Faist Jérôme; Sivco Deborah L.; Hutchinson Albert L.; Cho Alfred Y.

Quantum cascade unipolar intersubband light emitting diodes in the 8–13 μm wavelength region
Appl. Phys. Lett. 66, 4 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
123.
1995

Baillargeon J. N.; Cho A. Y.; Fischer R. J.

Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds
J. Vac. Sci. Technol. B 13, 64 (1995)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
124.
1994

Nichols D. T.; Sivco D. L.; Dutta N. K.; Hobson W. S.; Vakhshoori D.; Cho A. Y.; Wynn J. D.; Zydzik G. J.; Morgan R. A.; Leibenguth R. E.

Optical transmission systems employing vertical cavity surface emitting lasers and monolithically integrated photoreceivers
Appl. Phys. Lett. 65, 3054 (1994)
AT&T Bell Laboratories, Murray Hill, New Jersey 07947;
125.
1994

Faist Jerome; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Sirtori Carlo; Chu S. N. G.; Cho Alfred Y.

Quantum cascade laser: Temperature dependence of the performance characteristics and high T0 operation
Appl. Phys. Lett. 65, 2901 (1994)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
126.
1994

Gao Wei; Khan Al-Sameen; Berger Paul R.; Hunsperger R. G.; Zydzik George; O'Bryan H. M.; Sivco D.; Cho A. Y.

In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts
Appl. Phys. Lett. 65, 1930 (1994)
University of Delaware, Department of Electrical Engineering, Newark, Delaware 19716
127.
1994

Sucha G.; Bolton S. R.; Chemla D. S.; Sivco D. L.; Cho A. Y.

Carrier relaxation in InGaAs heterostructures
Appl. Phys. Lett. 65, 1486 (1994)
Department of Physics, University of California at Berkeley
128.
1994

Baillargeon J. N.; Cho A. Y.; Thiel F. A.; Fischer R. J.; Pearah P. J.; Cheng K. Y.

Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
Appl. Phys. Lett. 65, 207 (1994)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
129.
1994

Faist Jérôme; Capasso Federico; Sirtori Carlo; Sivco Deborah L.; Hutchinson Albert L.; Chu Sung Nee G.; Cho Alfred Y.

Narrowing of the intersubband electroluminescent spectrum in coupled‐quantum‐well heterostructures
Appl. Phys. Lett. 65, 94 (1994)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
130.
1994

Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Formation of new energy bands and minigap suppression by hybridization of barrier and well resonances in semiconductor superlattices
Appl. Phys. Lett. 64, 2982 (1994)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
131.
1994

Nichols Doyle T.; Dutta Niloy K.; Berger Paul R.; Smith P. R.; Sivco Deborah L.; Cho Alfred Y.

Monolithic p-i-n-FET photoreceivers
Proc. SPIE Int. Soc. Opt. Eng. 2149, 414 (1994)
AT&T Bell Labs. (USA);
132.
1994

Gunapala S. D.; Bandara K. M. S. V.; Levine B. F.; Sarusi G.; Sivco D. L.; Cho A. Y.

Very long wavelength InxGa1-;xAs/GaAs quantum well infrared photodetectors
Appl. Phys. Lett. 64, 2288 (1994)
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
133.
1994

Belenky G. L.; Kastalsky A.; Luryi S.; Garbinski P. A.; Cho A. Y.; Sivco D. L.

Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures
Appl. Phys. Lett. 64, 2247 (1994)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
134.
1994

Baillargeon J. N.; Cho A. Y.; Fischer R. J.; Pearah P. J.; Cheng K. Y.

Electrical characteristics of InP grown by molecular beam epitaxy using a valved phosphorus cracking cell
J. Vac. Sci. Technol. B 12, 1106 (1994)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
135.
1994

Faist Jerome; Capasso Federico; Sirtori Carlo; Sivco Debbie; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

Mid‐infrared field‐tunable intersubband electroluminescence at room temperature by photon‐assisted tunneling in coupled‐quantum wells
Appl. Phys. Lett. 64, 1144 (1994)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
136.
1993

Sirtori Carlo; Capasso Federico; Cho Alfred Y.

New class of coupled-quantum-well semiconductors with large electric field-tunable nonlinear susceptibilities in the infrared
Proc. SPIE Int. Soc. Opt. Eng. 1985, 158 (1993)
AT&T Bell Labs. (USA);
137.
1993

Nogaret A.; Maldonado M. A.; Carnahan R. E.; Martin K. P.; Higgins R. J.; Maude D. K.; Portal J. C.; Cury L. A.; Chen J. F.; Cho A. Y.

Interband tunneling through a heavy hole state
J. Appl. Phys. 74, 6443 (1993)
School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332
138.
1993

Sirtori Carlo; Faist Jerome; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Photocurrent reversal induced by localized continuum resonances in asymmetric quantum semiconductor structures
Appl. Phys. Lett. 63, 2670 (1993)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
139.
1993

Hunt N. E. J.; Schubert E. F.; Kopf R. F.; Sivco D. L.; Cho A. Y.; Zydzik G. J.

Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm
Appl. Phys. Lett. 63, 2600 (1993)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
140.
1993

Baquedano J. A.; Levi A. F. J.; Jalali B.; Cho A. Y.

Forward delay in scaled Al0.48In0.52As/In0.53Ga0.47As heterojunction bipolar transistors
Appl. Phys. Lett. 63, 2231 (1993)
AT&T Microelectronica Espana, 28760 Tres Cantos, Madrid, Spain;
141.
1993

Chen Li-ping; Burrus Charles A.; Liu C. T.; Liu Jia-ming; Cho Alfred Y.

Novel high-speed graded superlattice InAlGaAs photovoltaic detector
Proc. SPIE Int. Soc. Opt. Eng. 2022, 209 (1993)
Univ. of California/Los Angeles (USA)
142.
1993

Kastalsky A.; Bhat R.; Cho A. Y.; Sivco D. L.

New transport phenomena in a ballistic heterostructure field‐effect transistor
J. Appl. Phys. 74, 5259 (1993)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
143.
1993

Dutta N. K.; Lopata J.; Berger P. R.; Wang S. J.; Smith P. R.; Sivco D. L.; Cho A. Y.

10 GHz bandwidth monolithic p‐i‐n; modulation‐doped field effect transistor photoreceiver
Appl. Phys. Lett. 63, 2115 (1993)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
144.
1993

Faist Jerome; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Chu Sung Nee G.; Sirtori Carlo; Cho Alfred Y.

Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy
Appl. Phys. Lett. 63, 1354 (1993)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
145.
1993

Belenky G. L.; Garbinski P. A.; Luryi S.; Sivco D. L.; Mastrapasqua M.; Cho A. Y.; Hamm R. A.; Hayes T. R.; Laskowski E. J.; Smith P. R.

Collector‐up light‐emitting charge injection transistors in ;n‐InGaAs/InAlAs/;p‐InGaAs and ;n‐InGaAs/InP/;p‐InGaAs heterostructures
J. Appl. Phys. 73, 8618 (1993)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
146.
1993

Wang Q.; Yang E. S.; Chen Y. K.; Sivco D.; Cho A. Y.

Minimization of the offset voltage in heterojunction dipolar transistors by using a thick spacer
Appl. Phys. Lett. 62, 3129 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
147.
1993

Nogaret A.; Chen J. F.; Portal J. C.; Maude D. K.; Aristone F.; Higgins R. J.; Martin K. P.; Carnahan R. E.; Maldonado M. A.; Cho A. Y.

Resonant and off‐resonant phenomena in double‐barrier interband tunneling structures
Phys. Rev. B 47, 13872 (1993)
School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332
148.
1993

Lee H. G.; Zydzik G. J.; Fischer R. J.; Cho A. Y.

Dry etching of GaAs and AlGaAs by Cl2 in molecular beam epitaxy system
J. Vac. Sci. Technol. B 11, 989 (1993)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
149.
1993

Li X.; Cho A. Y.; Wang W. I.; Sivco D. L.

Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 11, 912 (1993)
Department of Electrical Engineering, Columbia University, New York, New York 10027
150.
1993

Sirtori Carlo; Faist Jerome; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Narrowing of the intersubband absorption spectrum by localization of continuum resonances in a strong electric field
Appl. Phys. Lett. 62, 1931 (1993)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
151.
1993

Carnahan R. E.; Maldonado M. A.; Martin K. P.; Nogaret A.; Higgins R. J.; Cury L. A.; Maude D. K.; Portal J. C.; Chen J. F.; Cho A. Y.

Γ‐;X intervalley tunneling in InAs/AlSb resonant tunneling diodes
Appl. Phys. Lett. 62, 1385 (1993)
School of Electrical and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332
152.
1993

Liu J. M.; Chen L. P.; Liu C. T.; Burrus C. A.; Cho A. Y.

Picosecond response of steady‐state photovoltaic effect in an asymmetrical graded semiconductor superlattice structure
Appl. Phys. Lett. 62, 1179 (1993)
Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90024‐159410;
153.
1992

Berger Paul R.; Dutta Niloy K.; Zydzik George; O'Bryan H. M.; Keller Ursula; Smith Peter R.; Lopata John; Sivco D.; Cho A. Y.

In0.53Ga0.47As p‐;i‐;n photodiodes with transparent cadmium tin oxide contacts
Appl. Phys. Lett. 61, 1673 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
154.
1992

Mensz Piotr M.; Sivco Deborah L.; Cho Alfred Y.

Charge injection frequency multiplier
Appl. Phys. Lett. 61, 934 (1992)
Philips Laboratories, Briarcliff Manor, New York 10510
155.
1992

Sirtori Carlo; Capasso Federico; Faist Jerome; Sivco Deborah L.; Chu Sung-Nee G.; Cho Alfred Y.

Quantum wells with localized states at energies above the barrier height: A Fabry–Perot electron filter
Appl. Phys. Lett. 61, 898 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
156.
1992

Chen J. F.; Cho A. Y.

Interband tunneling between valence‐band and conduction‐band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple‐barrier structure
J. Appl. Phys. 72, 960 (1992)
Department of Electrophysics, National Chaio Tung University, Hsinchu, Taiwan 30050, Republic of China
157.
1992

Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Resonant multiphoton electron emission from a quantum well
Appl. Phys. Lett. 60, 2678 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
158.
1992

Mastrapasqua Marco; Capasso Federico; Luryi Serge; Hutchinson Albert L.; Sivco Deborah L.; Cho Alfred Y.

Light emitting charge injection transistor with p‐type collector
Appl. Phys. Lett. 60, 2415 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
159.
1992

Chen J. F.; Cho A. Y.

The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure
J. Appl. Phys. 71, 4432 (1992)
Department of Electrophysics, National Chaio Tung University, Hsinchu, Taiwan, Republic of China
160.
1992

People R.; Jayaraman A.; Sputz S. K.; Vandenberg J. M.; Sivco D. L.; Cho A. Y.

Pseudomorphic In0.17Ga0.83As/Al0.32Ga0.68As multiple quantum wells under hydrostatic pressure: Implications for band alignments
Phys. Rev. B 45, 6031 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
161.
1992

Wang Y. H.; Houng M. P.; Sze P. W.; Chen J. F.; Cho A. Y.

Effects of Sb4/Ga ratios on the electrical properties of GaSb Schottky diodes
J. Appl. Phys. 71, 2760 (1992)
Department of Electrical Engineering, National Cheng‐Kung University, Tainan, Taiwan, Republic of China;
162.
1992

Houng M. P.; Wang Y. H.; Shen C. L.; Liu M. H.; Chen J. F.; Cho A. Y.

The influence of InAs well thickness on the negative differential resistance behaviors in GaSb/AlSb/InAs/GaSb/AlSb/InAs double barrier structures
J. Vac. Sci. Technol. B 10, 1048 (1992)
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
163.
1992

Gamelin J.; Hong M.; Fischer R. J.; Lin J.; Wang Y. H.; Mannaerts J. P.; Cho A. Y.; Wang S.

Structural considerations in the optimal design of surface‐emitting laser diodes
J. Vac. Sci. Technol. B 10, 1010 (1992)
Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720
164.
1992

Wang Y. H.; Hasnain G.; Tai K.; Wynn J. D.; Weir B. E.; Dutta N. K.; Cho A. Y.

Molecular beam epitaxy growth of high performance AlGaAs/GaAs quantum well top emitting lasers
J. Vac. Sci. Technol. B 10, 1002 (1992)
Department of Electrical Engineering, National Cheng‐Kung University, Tainan, Taiwan;
165.
1992

Schubert E. F.; Wang Y.-H.; Cho A. Y.; Tu L.-W.; Zydzik G. J.

Resonant cavity light‐emitting diode
Appl. Phys. Lett. 60, 921 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
166.
1992

Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Cho Alfred Y.

Giant, triply resonant, third‐order nonlinear susceptibility χ;3ω;(3) in coupled quantum wells
Phys. Rev. Lett. 68, 1010 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
167.
1992

Houng M. P.; Wang Y. H.; Shen C. L.; Chen J. F.; Cho A. Y.

Improvement of peak‐to‐valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure
Appl. Phys. Lett. 60, 713 (1992)
Department of Electrical Engineering, National Cheng‐Kung University, Tainan, Taiwan, Republic of China;
168.
1992

Levi A. F. J.; Jalali B.; Nottenburg R. N.; Cho A. Y.

Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
Appl. Phys. Lett. 60, 460 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
169.
1992

Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Hutchinson A. L.; Cho Alfred Y.

Resonant Stark tuning of second‐order susceptibility in coupled quantum wells
Appl. Phys. Lett. 60, 151 (1992)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
170.
1991

Berger Paul R.; Dutta N. K.; Sivco D. L.; Cho A. Y.

GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth
Appl. Phys. Lett. 59, 2826 (1991)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
171.
1991

Liu C. T.; Liu J. M.; Cho A. Y.

Realization of a photovoltaic transistor based on a steady‐state internal polarization effect in asymmetric semiconductor superlattices
Appl. Phys. Lett. 59, 2787 (1991)
AT&T Bell Laboratories, Allentown, Pennsylvania 18103;
172.
1991

Sirtori Carlo; Capasso Federico; Sivco Deborah L.; Chu S. N. G.; Cho Alfred Y.

Observation of large second order susceptibility via intersubband transitions at λ∼10 μm in asymmetric coupled AlInAs/GaInAs quantum wells
Appl. Phys. Lett. 59, 2302 (1991)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
173.
1991

Bar-Joseph I.; Gedalyahu Y.; Yacoby A.; Sivco D. L.; Chemla D. S.; Woodward T. K.; Cho A. Y.

Temperature dependence of the resonant‐tunneling process in a double‐barrier diode
Phys. Rev. B 44, 8361 (1991)
Department of Physics, Weizmann Institute of Science, Rehovot, 76 100, Israel
174.
1991

Liu C. T.; Liu J. M.; Garbinski P. A.; Luryi S.; Sivco D. L.; Cho A. Y.

Steady‐state photovoltaic effect in asymmetrical graded superlattices
Phys. Rev. Lett. 67, 2231 (1991)
AT&T Bell Laboratories, Allentown, Pennsylvania 18103;
175.
1991

Sizer II Theodore; Woodward T. K.; Chiu T-H; Sivco D. L.; Cho A. Y.

Optoelectronic device mapping using differential imaging techniques
J. Appl. Phys. 70, 3837 (1991)
AT&T Bell Laboratories, Crawfords Corner Road, Holmdel, New Jersey 07733‐1988;
176.
1991

Vakhshoori D.; Fischer R. J.; Hong M.; Sivco D. L.; Zydzik G. J.; Chu G. N. S.; Cho A. Y.

Blue‐green surface‐emitting second‐harmonic generators on (111);B GaAs
Appl. Phys. Lett. 59, 896 (1991)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
177.
1991

Dutta N. K.; Lopata J.; Sivco D. L.; Cho A. Y.

High‐speed modulation and nonlinear damping effect in InGaAs/GaAs lasers
J. Appl. Phys. 70, 2476 (1991)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
178.
1991

Woodward T. K.; Chemla D. S.; Bar-Joseph I.; Baranger H. U.; Sivco D. L.; Cho A. Y.

Sequential versus coherent tunneling in double‐barrier diodes investigated by differential absorption spectroscopy
Phys. Rev. B 44, 1353 (1991)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
179.
1991

Chen J. F.; Cho A. Y.

Characterization of Te‐doped GaSb grown by molecular beam epitaxy using SnTe
J. Appl. Phys. 70, 277 (1991)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
180.
1991

Weiner J. S.; Hess H. F.; Robinson R. B.; Hayes T. R.; Sivco D. L.; Cho A. Y.; Ranade M.

Electronic properties of semiconductor nanostructures probed by scanning tunneling microscopy
Appl. Phys. Lett. 58, 2402 (1991)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
181.
1991

Dutta N. K.; Lopata J.; Sivco D. L.; Cho A. Y.

Temperature dependence of threshold of strained quantum well lasers
Appl. Phys. Lett. 58, 1125 (1991)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
182.
1991

Keller U.; Woodward T. K.; Sivco D. L.; Cho A. Y.

Coupled‐cavity resonant passive model‐locked Nd;yttrium lithium fluoride laser
Opt. Lett. 16, 390 (1991)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
183.
1991

Tu Li-Wei; Schubert E. Fred; O'Bryan Hank M.; Wang Yeong-Her; Weir Bonnie E.; Zydzik George J.; Cho Alfred Y.

Transparent conductive metal‐oxide contacts in vertical‐injection top‐emitting quantum well lasers
Appl. Phys. Lett. 58, 790 (1991)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
184.
1990

Mensz Piotr M.; Garbinski Paul A.; Cho Alfred Y.; Sivco Deborah L.; Luryi Serge

High transconductance and large peak‐to‐valley ratio of negative differential conductance in three‐terminal InGaAs/InAlAs real‐space transfer devices
Appl. Phys. Lett. 57, 2558 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
185.
1990

Luryi Serge; Mensz Piotr M.; Pinto Mark R.; Garbinski Paul A.; Cho Alfred Y.; Sivco Deborah L.

Charge injection logic
Appl. Phys. Lett. 57, 1787 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
186.
1990

Kuang J. B.; Chen Y. K.; Sivco D.; Cho A. Y.; Eastman L. F.

High‐current lattice‐strained In;0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy
Appl. Phys. Lett. 57, 1784 (1990)
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
187.
1990

Yang L.; Wu M. C.; Chen J. F.; Chen Y. K.; Snider G. L.; Cho A. Y.

Quantization effect on capacitance‐voltage and current‐voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode
J. Appl. Phys. 68, 4286 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
188.
1990

Dutta N. K.; Wynn J.; Sivco D. L.; Cho A. Y.; Zydzik G. J.

Performance characteristics of In0.2Ga0.8As/GaAs multiquantum‐well lasers
J. Appl. Phys. 68, 3822 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
189.
1990

Wang Y. H.; Tai K.; Hsieh Y. F.; Chu S. N. G.; Wynn J. D.; Cho A. Y.

Observation of reduced current thresholds in GaAs/AlGaAs vertical‐cavity surface‐emitting lasers grown on 4° off‐orientation (001) GaAs substrates
Appl. Phys. Lett. 57, 1613 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
190.
1990

Chen Chung Y.; Cho Alfred Y.

Recent advances in optoelectronic components for systems applications
Proc. SPIE Int. Soc. Opt. Eng. 1291, 186 (1990)
Hughes Aircraft Co. (USA)
191.
1990

Chen J. F.; Yang L.; Wu M. C.; Chu S. N. G.; Cho A. Y.

On the effect of the barrier widths in the InAs/AlSb/GaSb single‐barrier interband tunneling structures
J. Appl. Phys. 68, 3451 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
192.
1990

Chen J. F.; Wu M. C.; Yang L.; Cho A. Y.

InAs/AlSb/GaSb single‐barrier interband tunneling diodes with high peak‐to‐valley ratios at room temperature
J. Appl. Phys. 68, 3040 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
193.
1990

Yang L.; Chen J. F.; Cho A. Y.

A new GaSb/AlSb/GaSb/AlSb/InAs double‐barrier interband tunneling diode and its tunneling mechanism
J. Appl. Phys. 68, 2997 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
194.
1990

Woodward T. K.; Sizer Theodore; Sivco D. L.; Cho A. Y.

InxGa1-;xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
Appl. Phys. Lett. 57, 548 (1990)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
195.
1990

Beltram Fabio; Capasso Federico; Sivco Deborah L.; Hutchinson Albert L.; Chu Sung-Nee G.; Cho Alfred Y.

Scattering‐controlled transmission resonances and negative differential conductance by field‐induced localization in superlattices
Phys. Rev. Lett. 64, 3167 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
196.
1990

Nottenburg R. N.; Levi A. F. J.; Jalali B.; Sivco D.; Humphrey D. A.; Cho A. Y.

Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field
Appl. Phys. Lett. 56, 2660 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
197.
1990

Mensz Piotr M.; Luryi Serge; Cho Alfred Y.; Sivco Deborah L.; Ren Fan

Real‐space transfer in three‐terminal InGaAs/InAlAs/InGaAs heterostructure devices
Appl. Phys. Lett. 56, 2563 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
198.
1990

Tai K.; Wynn J. D.; Yang L.; Wang Y. H.; Cho A. Y.

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface‐emitting lasers
Appl. Phys. Lett. 56, 2496 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
199.
1990

Dutta N. K.; Wynn J.; Sivco D. L.; Cho A. Y.

Linewidth enhancement factor in strained quantum well lasers
Appl. Phys. Lett. 56, 2293 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
200.
1990

Kourouklis G. A.; Jayaraman A.; People R.; Sputz S. K.; Maines R. G.; Sivco D. L.; Cho A. Y.

Pressure‐induced resonance Raman scattering in Ga;1-;xInxAs/Ga1-;yAlyAs strained quantum‐well structures
J. Appl. Phys. 67, 6438 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
201.
1990

Tai Kuochou; Yang L.; Fischer R. J.; Tanbun-Ek Tawee; Logan Ralph A.; Wang Yan H.; Hong Minghwei; Cho Alfred Y.

Vertical cavity surface emitting laser diodes
Proc. SPIE Int. Soc. Opt. Eng. 1216, 139 (1990)
AT&T Bell Labs. (USA);
202.
1990

Jalali B.; Nottenburg R. N.; Levi A. F. J.; Hamm R. A.; Panish M. B.; Sivco D.; Cho A. Y.

Base doping limits in heterostructure bipolar transistors
Appl. Phys. Lett. 56, 1460 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
203.
1990

Kolodzey J.; Laskar J.; Boor S.; Agarwala S.; Caracci S.; Ketterson A. A.; Adesida I.; Hsieh K. C.; Sivco D.; Cho A. Y.

Direct‐current and radio‐frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels
J. Vac. Sci. Technol. B 8, 360 (1990)
Department of Electrical and Computer Engineering, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801;
204.
1990

Fischer R. J.; Tai K.; Hong M.; Vandenberg J. M.; Ying J. Y.; Mannaerts J. P.; Cho A. Y.

Use of hybrid reflectors to achieve low thresholds in all molecular‐beam epitaxy grown vertical cavity surface emitting laser diodes
J. Vac. Sci. Technol. B 8, 336 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
205.
1990

Hasnain G.; Levine B. F.; Sivco D. L.; Cho A. Y.

Mid‐infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures
Appl. Phys. Lett. 56, 770 (1990)
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974;
206.
1990

Bar-Joseph I.; Woodward T. K.; Chemla D. S.; Sivco D.; Cho A. Y.

Differential absorption spectroscopy of charge distributions in double‐barrier tunnel structures
Phys. Rev. B 41, 3264 (1990)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
207.
1990

Wu Ming C.; Olsson N. A.; Sivco D.; Cho A. Y.

A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier
Appl. Phys. Lett. 56, 221 (1990)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
208.
1989

Vengurlekar A. S.; Capasso F.; Sen S.; Hutchinson A. L.; Chu S. N. G.; Sivco D.; Cho A. Y.

Quasi‐ballistic resonant tunneling of minority electrons into the excited states of a quantum well
Appl. Phys. Lett. 55, 2529 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
209.
1989

Tai K.; Fischer R. J.; Seabury C. W.; Olsson N. A.; Huo T-C. D.; Ota Y.; Cho A. Y.

Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers
Appl. Phys. Lett. 55, 2473 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
210.
1989

Deppe D. G.; Cho A. Y.; Huang K. F.; Fischer R. J.; Tai K.; Schubert E. F.; Chen J. F.

AlGaAs‐GaAs and AlGaAs‐GaAs‐InGaAs vertical cavity surface emitting lasers with Ag mirrors
J. Appl. Phys. 66, 5629 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
211.
1989

Jewell J. L.; Huang K. F.; Tai K.; Lee Y. H.; Fischer R. J.; McCall S. L.; Cho A. Y.

Vertical cavity single quantum well laser
Appl. Phys. Lett. 55, 424 (1989)
AT&T Bell Laboratories, Room 4G‐520, Holmdel, New Jersey 07733;
212.
1989

Jalali B.; Nottenburg R. N.; Chen Y. K.; Levi A. F. J.; Sivco D.; Cho A. Y.; Humphrey D. A.

Near‐ideal lateral scaling in abrupt Al;0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy
Appl. Phys. Lett. 54, 2333 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
213.
1989

Huang K. F.; Tai K.; Jewell J. L.; Fischer R. J.; McCall S. L.; Cho A. Y.

Room‐temperature pseudomorphic In;xGa1-;xAs/GaAs quantum well surface‐emitting lasers at 0.94–1.0 μm wavelengths
Appl. Phys. Lett. 54, 2192 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
214.
1989

Huang K. F.; Tai K.; Chu S. N. G.; Cho A. Y.

Optical studies of InxGa1-;xAs/GaAs strained‐layer quantum wells
Appl. Phys. Lett. 54, 2026 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
215.
1989

Tai K.; Mysyrowicz A.; Fischer R. J.; Slusher R. E.; Cho A. Y.

Two‐photon absorption spectroscopy in GaAs quantum wells
Phys. Rev. Lett. 62, 1784 (1989)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
216.
1988

Capasso Federico; Sen Susanta; Cho Alfred Y.; Sivco Deborah L.

Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling
Appl. Phys. Lett. 53, 1056 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
217.
1988

Wang J. K.; Campbell J. H.; Tsui D. C.; Cho A. Y.

Heat capacity of the two‐dimensional electron gas in GaAs/Al;xGa1-;xAs multiple‐quantum‐well structures
Phys. Rev. B 38, 6174 (1988)
Department of Physics, Princeton University, Princeton, New Jersey 08544
218.
1988

Bethea C. G.; Levine B. F.; Yen M. Y.; Cho A. Y.

Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
Appl. Phys. Lett. 53, 291 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
219.
1988

Chand N.; van der Ziel J. P.; Weiner J. S.; Sergent A. M.; Cho A. Y.; Grim K. A.

Warpage of GaAs‐on‐Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy
Appl. Phys. Lett. 53, 225 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
220.
1988

Beltram Fabio; Capasso Federico; Luryi Serge; Chu Sung-Nee G.; Cho Alfred Y.; Sivco Deborah L.

Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor
Appl. Phys. Lett. 53, 219 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
221.
1988

People R.; Jayaraman A.; Wecht K. W.; Sivco D. L.; Cho A. Y.

Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission
Appl. Phys. Lett. 52, 2124 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
222.
1988

Levine B. F.; Cho A. Y.; Walker J.; Malik R. J.; Kleinman D. A.; Sivco D. L.

InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μm
Appl. Phys. Lett. 52, 1481 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
223.
1988

Sen Susanta; Capasso Federico; Cho Alfred Y.

Summary Abstract: Negative transconductance resonant tunneling field effect transistors and monolithically integrated resonant tunneling diodes
J. Vac. Sci. Technol. B 6, 676 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
224.
1988

Yen M. Y.; People R.; Wecht K. W.; Cho A. Y.

Long‐wavelength photoluminescence of InAs;1-;xSbx (0<;x<1) grown by molecular beam epitaxy on (100) InAs
Appl. Phys. Lett. 52, 489 (1988)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
225.
1987

Menéndez J.; Pinczuk A.; Werder D. J.; Sputz S. K.; Miller R. C.; Sivco D. L.; Cho A. Y.

Large valence‐band offset in strained‐layer In;xGa1-;xAs‐GaAs quantum wells
Phys. Rev. B 36, 8165 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
226.
1987

Boebinger G. S.; Tu C. W.; Cho A. Y.; Hwang J. C. M.; Chang A. M.; Tsui D. C.; Stormer H. L.; Weimann G.

Activation energies and localization in the fractional quantum Hall effect
Phys. Rev. B 36, 7919 (1987)
Department of Physics and Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
227.
1987

Bethea C. G.; Yen M. Y.; Levine B. F.; Choi K. K.; Cho A. Y.

Long wavelength InAs1-;xSbx/GaAs detectors prepared by molecular beam epitaxy
Appl. Phys. Lett. 51, 1431 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
228.
1987

Chand N.; Fischer R.; Sergent A. M.; Lang D. V.; Pearton S. J.; Cho A. Y.

Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing
Appl. Phys. Lett. 51, 1013 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
229.
1987

Allam Jeremy; Beltram Fabio; Capasso Federico; Cho Alfred Y.

Resonant Zener tunneling of electrons between valence‐band and conduction‐band quantum wells
Appl. Phys. Lett. 51, 575 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
230.
1987

Capasso Federico; Sen Susanta; Cho Alfred Y.

Negative transconductance resonant tunneling field‐effect transistor
Appl. Phys. Lett. 51, 526 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
231.
1987

Menéndez J.; Pinczuk A.; Werder D. J.; Cho A. Y.; Sivco D. L.

Summary Abstract: Light scattering determination of band offsets in GaAs–In;xGa1-;xAs quantum wells
J. Vac. Sci. Technol. B 5, 1256 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
232.
1987

Alavi K.; Cho A. Y.; Capasso F.; Allam J.

Molecular‐beam epitaxial growth of graded band‐gap quaternary Ga;xAlyIn1-;x-;yAs multilayer heterostructures on InP; Application to a novel avalanche photodiode with an ultrahigh ionization ratio
J. Vac. Sci. Technol. B 5, 802 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
233.
1987

Capasso Federico; Sen Susanta; Cho Alfred Y.; Hutchinson Albert L.

Resonant tunneling spectroscopy of hot minority electrons injected in gallium arsenide quantum wells
Appl. Phys. Lett. 50, 930 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
234.
1987

Yen M. Y.; Levine B. F.; Bethea C. G.; Choi K. K.; Cho A. Y.

Molecular beam epitaxial growth and optical properties of InAs1-;xSbx in 8–12 μm wavelength range
Appl. Phys. Lett. 50, 927 (1987)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
235.
1987

Taylor G. W.; Mand R. S.; Simmons J. G.; Cho A. Y.

Ledistor—a three‐terminal double heterostructure optoelectronic switch
Appl. Phys. Lett. 50, 338 (1987)
Bell Laboratories, Holmdel, New Jersey 07733
236.
1986

Taylor G. W.; Mand R. S.; Simmons J. G.; Cho A. Y.

Optically induced switching in a p‐channel double heterostructure optoelectronic switch
Appl. Phys. Lett. 49, 1406 (1986)
Bell Laboratories, Murray Hill, New Jersey 07974
237.
1986

Capasso Federico; Mohammed Khalid; Cho Alfred Y.

Electronic transport and depletion of quantum wells by tunneling through deep levels in semiconductor superlattices
Phys. Rev. Lett. 57, 2303 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
238.
1986

Chand N.; People R.; Baiocchi F. A.; Wecht K. W.; Cho A. Y.

Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
Appl. Phys. Lett. 49, 815 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
239.
1986

Weiner J. S.; Pearson D. B.; Miller D. A. B.; Chemla D. S.; Sivco D.; Cho A. Y.

Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures
Appl. Phys. Lett. 49, 531 (1986)
AT&T Bell Laboratories, Crawfords Corner Road, Holmdel, New Jersey 07733;
240.
1986

Voisin P.; Voos M.; Marzin J. Y.; Tamargo M. C.; Nahory R. E.; Cho A. Y.

Luminescence investigations of highly strained‐layer InAs‐GaAs superlattices
Appl. Phys. Lett. 48, 1476 (1986)
Groupe de Physique des Solides de l’Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France;
241.
1986

Taylor G. W.; Mand R. S.; Cho A. Y.; Simmons J. G.

Experimental realization of an n‐channel double heterostructure optoelectronic switch
Appl. Phys. Lett. 48, 1368 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
242.
1986

Capasso F.; Allam J.; Cho A. Y.; Mohammed K.; Malik R. J.; Hutchinson A. L.; Sivco D.

New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band‐edge discontinuity
Appl. Phys. Lett. 48, 1294 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
243.
1986

Stavola Michael; Capasso F.; Nabity J. C.; Alavi K.; Cho A. Y.

Metastability and polarization effects in a pn heterojunction device due to deep states
Appl. Phys. Lett. 48, 997 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
244.
1986

Capasso F.; Mohammed K.; Cho A. Y.

Summary Abstract: New quantum transport phenomena and superlattice devices in molecular beam epitaxially grown AlInAs/GaInAs heterostructures
J. Vac. Sci. Technol. B 4, 656 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
245.
1986

Taylor G. W.; Simmons J. G.; Mand R. S.; Cho A. Y.

Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy
J. Vac. Sci. Technol. B 4, 603 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
246.
1986

Tamargo M. C.; Nahory R. E.; Voisin P.; Voos M.; Hull R.; Cho A. Y.

Summary Abstract: Growth and characterization of an InAs–GaAs superlattice alloy
J. Vac. Sci. Technol. B 4, 539 (1986)
Bell Communications Research, Holmdel, New Jersey 07733
247.
1986

Capasso Federico; Mohammed Khalid; Cho Alfred Y.

Sequential resonant tunneling through a multiquantum well superlattice
Appl. Phys. Lett. 48, 478 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
248.
1986

Taylor G. W.; Simmons J. G.; Cho A. Y.; Mand R. S.

A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy
J. Appl. Phys. 59, 596 (1986)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
249.
1985

Capasso F.; Mohammed K.; Cho A. Y.; Hull R.; Hutchinson A. L.

Erratum: New quantum photoconductivity and large photocurrent gain by effective‐mass filtering in a forward‐biassed superlattice ;p‐;n junction [Phys. Rev. Lett. ;55, 1152 (1985)]
Phys. Rev. Lett. 55, 2229 (1985)
250.
1985

Mohammed K.; Capasso F.; Allam J.; Cho A. Y.; Hutchinson A. L.

New high‐speed long‐wavelength Al;0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes
Appl. Phys. Lett. 47, 597 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
251.
1985

Penna A. F. S.; Shah Jagdeep; DiGiovanni A. E.; Cho A. Y.; Gossard A. C.

Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy
Appl. Phys. Lett. 47, 591 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
252.
1985

Capasso F.; Mohammed K.; Cho A. Y.; Hull R.; Hutchinson A. L.

New quantum photoconductivity and large photocurrent gain by effective‐mass filtering in a forward‐biased superlattice ;p‐;n junction
Phys. Rev. Lett. 55, 1152 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
253.
1985

Nicholas R. J.; Brunel L. C.; Huant S.; Karrai K.; Portal J. C.; Brummell M. A.; Razeghi M.; Cheng K. Y.; Cho A. Y.

Frequency‐shifted polaron coupling in Ga;0.47In0.53As heterojunctions
Phys. Rev. Lett. 55, 883 (1985)
S.N.C.I.Centre National de la Recherche Scientifique, 166X, F‐38042 Grenoble, France;
254.
1985

Eisenstein J. P.; Stormer H. L.; Narayanamurti V.; Cho A. Y.; Gossard A. C.; Tu C. W.

Density of states and de Haas–;van Alphen effect in two‐dimensional electron systems
Phys. Rev. Lett. 55, 875 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
255.
1985

Capasso Federico; Cho Alfred Y.; Hull Robert; Mohammed Khalid; Hutchinson Albert L.

Effective mass filtering: Giant quantum amplification of the photocurrent in a semiconductor superlattice
Appl. Phys. Lett. 47, 420 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
256.
1985

Capasso F.; Mohammed K.; Cho A. Y.

Tunable barrier heights and band discontinuities via doping interface dipoles: An interface engineering technique and its device applications
J. Vac. Sci. Technol. B 3, 1245 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
257.
1985

Chen C. Y.; Chu S. N. G.; Cho A. Y.

GaAs/Ga0.47In0.53As lattice‐mismatched Schottky barrier gates; Influence of misfit dislocations on reverse leakage currents
Appl. Phys. Lett. 46, 1145 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
258.
1985

Magnea N.; Petroff P. M.; Capasso F.; Logan R. A.; Alavi K.; Cho A. Y.

Electric field dependent cathodoluminescence of III‐V compound heterostructures; A new interface characterization technique
Appl. Phys. Lett. 46, 1074 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
259.
1985

Capasso Federico; Cho Alfred Y.; Mohammed Khalid; Foy Philip W.

Doping interface dipoles: Tunable heterojunction barrier heights and band‐edge discontinuities by molecular beam epitaxy
Appl. Phys. Lett. 46, 664 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
260.
1985

Weiner J. S.; Chemla D. S.; Miller D. A. B.; Wood T. H.; Sivco D.; Cho A. Y.

Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells
Appl. Phys. Lett. 46, 619 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
261.
1985

Penna A. F. S.; Shah Jagdeep; Pinczuk A.; Cho A. Y.

Summary Abstract: Optical investigation of modulation‐doped In;0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures
J. Vac. Sci. Technol. B 3, 696 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey;
262.
1985

Chen C. Y.; Cho A. Y.; Olsson N. A.; Garbinski P. A.

Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating
Appl. Phys. Lett. 46, 296 (1985)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
263.
1985

Penna A. F. S.; Shah Jagdeep; Pinczuk A.; Sivco D.; Cho A. Y.

Optical investigation of modulation‐doped In;0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures
Appl. Phys. Lett. 46, 184 (1985)
AT&T Bell Laboratories, Holmdel, New Jersey 07733;
264.
1984

Caine E. J.; Subbanna S.; Kroemer H.; Merz J. L.; Cho A. Y.

Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation; Experimental verification
Appl. Phys. Lett. 45, 1123 (1984)
Department of Electrical & Computer Engineering, University of California, Santa Barbara, California 93106;
265.
1984

Capasso F.; Mohammed K.; Alavi K.; Cho A. Y.; Foy P. W.

Impact ionization rates for electrons and holes in Al0.48In0.52As
Appl. Phys. Lett. 45, 968 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
266.
1984

Capasso F.; Kasper B.; Alavi K.; Cho A. Y.; Parsey J. M.

New low dark current, high speed Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiode by molecular beam epitaxy for long wavelength fiber optic communication systems
Appl. Phys. Lett. 44, 1027 (1984)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
267.
1984

Chen C. Y.; Pang Y. M.; Cho A. Y.; Alavi K.; Garbinski P. A.

Modulation‐doped Al;0.48In0.52As/Ga0.47In0.53As photodetector prepared by molecular beam epitaxy
J. Vac. Sci. Technol. B 2, 262 (1984)
Bell Laboratories, Murray Hill, New Jersey 07974
268.
1984

Chen C. Y.; Pang Y. M.; Alavi K.; Cho A. Y.; Garbinski P. A.

Interdigitated Al0.48In0.52As/Ga0.47In0.53As photoconductive detectors
Appl. Phys. Lett. 44, 99 (1984)
Bell Laboratories, Murray Hill, New Jersey 07974
269.
1983

Chen C. Y.; Pang Y. M.; Cho A. Y.; Garbinski P. A.

New minority hole sinked photoconductive detector
Appl. Phys. Lett. 43, 1115 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
270.
1983

Capasso F.; Alavi K.; Cho A. Y.; Foy P. W.; Bethea C. G.

New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy
Appl. Phys. Lett. 43, 1040 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
271.
1983

Schneider M. V.; Cho A. Y.; Kollberg E.; Zirath H.

Characteristics of Schottky diodes with microcluster interface
Appl. Phys. Lett. 43, 558 (1983)
Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733
272.
1983

Chen C. Y.; Pang Y. M.; Garbinski P. A.; Cho A. Y.; Alavi K.

Modulation‐doped Ga;0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55‐μm applications
Appl. Phys. Lett. 43, 308 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
273.
1983

People R.; Wecht K. W.; Alavi K.; Cho A. Y.

Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In;0.52Al0.48As/In0.53Ga0.47As, N‐;n heterojunction by C‐;V profiling
Appl. Phys. Lett. 43, 118 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
274.
1983

Chen C. Y.; Cho A. Y.; Bethea C. G.; Garbinski P. A.; Pang Y. M.; Levine B. F.; Ogawa K.

Ultrahigh speed modulation‐doped heterostructure field‐effect photodetectors
Appl. Phys. Lett. 42, 1040 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
275.
1983

Temkin H.; Alavi K.; Wagner W. R.; Pearsall T. P.; Cho A. Y.

1.5–1.6‐μm Ga;0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
Appl. Phys. Lett. 42, 845 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
276.
1983

Fischer R.; Klem J.; Drummond T. J.; Thorne R. E.; Kopp W.; Morkoç H.; Cho A. Y.

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
J. Appl. Phys. 54, 2508 (1983)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
277.
1983

Bethea C. G.; Chen C. Y.; Cho A. Y.; Garbinski P. A.; Levine B. F.

Picosecond AlxGa1-;xAs modulation‐doped optical field‐effect transistor sampling gate
Appl. Phys. Lett. 42, 682 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
278.
1983

Smith J. S.; Yariv A.; Margalit S.; Chiu L. C.; Cho A. Y.

A new infrared detector using electron emission from multiple quantum wells
J. Vac. Sci. Technol. B 1, 376 (1983)
California Institute of Technology, Pasadena, California 91125
279.
1983

Alavi K.; Petroff P. M.; Wagner W. R.; Cho A. Y.

Substrate rotation‐induced compositional oscillation in molecular beam epitaxy (MBE)
J. Vac. Sci. Technol. B 1, 146 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
280.
1983

Cho A. Y.

Summary Abstract: Recent developments in MBE and summary of the MBE conference in Japan
J. Vac. Sci. Technol. B 1, 119 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
281.
1983

Hwang J. C. M.; Brennan T. M.; Cho A. Y.

Initial Results of a High Throughput MBE System for Device Fabrication
J. Electrochem. Soc. 130, 493 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
282.
1983

Alavi K.; Temkin H.; Wagner W. R.; Cho A. Y.

Optically pumped 1.55‐μm double heterostructure Ga;xAlyIn1-;x-;yAs/AluIn1-;uAs lasers grown by molecular beam epitaxy
Appl. Phys. Lett. 42, 254 (1983)
Bell Laboratories, Murray Hill, New Jersey 07974
283.
1982

Kopp W.; Su S. L.; Fischer R.; Lyons W. G.; Thorne R. E.; Drummond T. J.; Morkoç H.; Cho A. Y.

Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1-;xAs field‐effect transistors
Appl. Phys. Lett. 41, 563 (1982)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, 1101 W. Springfield, Urbana, Illinois 61801
284.
1982

Wagner W. R.; Cho A. Y.

Al0.3Ga0.7P0.01As0.99 GaAs laser heterostructures grown by molecular beam epitaxy
J. Appl. Phys. 53, 6032 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
285.
1982

Chen C. Y.; Cho A. Y.; Gossard A. C.; Garbinski P. A.

Offset channel insulated gate field‐effect transistors
Appl. Phys. Lett. 41, 360 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
286.
1982

Chen C. Y.; Cho A. Y.; Bethea C. G.; Garbinski P. A.

Bias‐free selectively doped Al;xGa1-;x As‐GaAs picosecond photodetectors
Appl. Phys. Lett. 41, 282 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
287.
1982

Kastalsky A.; Cheng K. Y.; Dingle R.; Cho A. Y.

Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In;0.53Ga0.47As‐In;0.48Al0.52As interface
Appl. Phys. Lett. 41, 274 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
288.
1982

Cheng K. Y.; Cho A. Y.

Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy
J. Appl. Phys. 53, 4411 (1982)
Electrical Engineering Department, Chung‐Cheng Institute of Technology, Tao‐Yuom, Taiwan, Republic of China;
289.
1982

Drummond T. J.; Morkoç H.; Cheng K. Y.; Cho A. Y.

Current transport in modulation‐doped Ga;0.47In0.53As/Al0.48In0.52As heterojunctions at moderate electric fields
J. Appl. Phys. 53, 3654 (1982)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
290.
1982

Morkoç H.; Drummond T. J.; Fischer R.; Cho A. Y.

Moderate mobility enhancement in single period AlxGa1-;x As/GaAs heterojunctions with GaAs on top
J. Appl. Phys. 53, 3321 (1982)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
291.
1982

Low T. S.; Stillman G. E.; Cho A. Y.; Morkoc H.; Calawa A. R.

Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy
Appl. Phys. Lett. 40, 611 (1982)
Electrical Engineering Research Laboratory, Materials Research Laboratory, and Coordinated Science Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801;
292.
1982

Bethea C. G.; Chen C. Y.; Cho A. Y.; Garbinski P. A.

Optoelectronic picosecond sampling system utilizing a modulated barrier photodiode
Appl. Phys. Lett. 40, 591 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
293.
1982

Chen C. Y.; Cho A. Y.; Garbinski P. A.; Bethea C. G.

GaAs/AlxGa1-;xAs depletion stop phototransistor grown by molecular beam epitaxy
Appl. Phys. Lett. 40, 510 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
294.
1982

Dingle R.; Weisbuch C.; Störmer H. L.; Morkoç H.; Cho A. Y.

Characterization of high purity GaAs grown by molecular beam epitaxy
Appl. Phys. Lett. 40, 507 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
295.
1982

Cheng K. Y.; Cho A. Y.; Christman S. B.; Pearsall T. P.; Rowe J. E.

Measurement of the Γ‐;L separation in Ga0.47In0.53As by ultraviolet photoemission
Appl. Phys. Lett. 40, 423 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
296.
1982

Chen C. Y.; Cho A. Y.; Cheng K. Y.; Garbinski P. A.

Quasi‐Schottky barrier diode on ;n‐Ga;0.47In0.53As using a fully depleted p+‐Ga;0.47In0.53As layer grown by molecular beam epitaxy
Appl. Phys. Lett. 40, 401 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
297.
1982

Drummond T. J.; Kopp W.; Fischer R.; Morkoç H.; Thorne R. E.; Cho A. Y.

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures
J. Appl. Phys. 53, 1238 (1982)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
298.
1982

Drummond T. J.; Kopp W.; Keever M.; Morkoç H.; Cho A. Y.

Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures
J. Appl. Phys. 53, 1023 (1982)
Department of Electrical Engineering and the Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
299.
1982

Petroff P. M.; Cho A. Y.; Reinhart F. K.; Gossard A. C.; Wiegmann W.

Alloy clustering in Ga1-;xAlxAs compound semiconductors grown by molecular beam epitaxy
Phys. Rev. Lett. 48, 170 (1982)
Bell Laboratories, Murray Hill, New Jersey 07974
300.
1981

Petroff P. M.; Feldman L. C.; Cho A. Y.; Williams R. S.

Properties of aluminum epitaxial growth on GaAs
J. Appl. Phys. 52, 7317 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
301.
1981

Cheng K. Y.; Cho A. Y.; Wagner W. R.

Molecular‐beam epitaxial growth of uniform Ga;0.47In0.53As with a rotating sample holder
Appl. Phys. Lett. 39, 607 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
302.
1981

Cheng K. Y.; Cho A. Y.; Wagner W. R.

Tin doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy
J. Appl. Phys. 52, 6328 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
303.
1981

Drummond T. J.; Kopp W.; Morkoç H.; Hess K.; Cho A. Y.; Streetman B. G.

Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures
J. Appl. Phys. 52, 5689 (1981)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801;
304.
1981

Chen C. Y.; Cho A. Y.; Garbinski P. A.; Bethea C. G.; Levine B. F.

Modulated barrier photodiode: A new majority‐carrier photodetector
Appl. Phys. Lett. 39, 340 (1981)
Bell Laboratories, Murry Hill, New Jersey 07974
305.
1981

Drummond T. J.; Morkoç H.; Hess K.; Cho A. Y.

Experimental and theoretical electron mobility of modulation doped AlxGa1-;xAs/GaAs heterostructures grown by molecular beam epitaxy
J. Appl. Phys. 52, 5231 (1981)
Department of Electrical Engineering, Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
306.
1981

Cheng K. Y.; Cho A. Y.; Bonner W. A.

Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy
J. Appl. Phys. 52, 4672 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
307.
1981

Drummond T. J.; Morkoç H.; Cho A. Y.

Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1-;xAs/GaAs heterostructures
J. Appl. Phys. 52, 1380 (1981)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
308.
1981

Cho A. Y.; Cheng K. Y.

Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro‐optic and microwave devices
Appl. Phys. Lett. 38, 360 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
309.
1981

Cheng K. Y.; Cho A. Y.; Wagner W. R.; Bonner W. A.

Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven
J. Appl. Phys. 52, 1015 (1981)
Bell Laboratories, Murray Hill, New Jersey 07974
310.
1980

Morkoç Hadis; Hopkins Craig; Evans C. A.; Cho A. Y.

Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy
J. Appl. Phys. 51, 5986 (1980)
University of Illinois, Department of Electrical Engineering, Coordinated Science Laboratory, Urbana, Illinois 60801
311.
1980

Lee T. P.; Burrus C. A.; Cho A. Y.; Cheng K. Y.; Manchon D. D.

Zn‐diffused back‐illuminated p‐i‐n photodiodes in InGaAs/InP grown by molecular‐beam epitaxy
Appl. Phys. Lett. 37, 730 (1980)
Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733
312.
1980

Morkoç Hadis; Cho A. Y.; Radice C.

Transport properties of Sn‐doped Al;xGa1-;xAs grown by molecular beam epitaxy
J. Appl. Phys. 51, 4882 (1980)
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
313.
1980

Tsui D. C.; Englert Th.; Cho A. Y.; Gossard A. C.

Observation of magnetophonon resonances in a two‐dimensional electronic system
Phys. Rev. Lett. 44, 341 (1980)
Bell Laboratories, Murray Hill, New Jersey 07974
314.
1980

Merlin R.; Colvard C.; Klein M. V.; Morkoc H.; Cho A. Y.; Gossard A. C.

Raman scattering in superlattices: Anisotropy of polar phonons
Appl. Phys. Lett. 36, 43 (1980)
Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Ilinois, 61801;

Co-authors

Co-publications
166

Sivco, Deborah L.
119

Capasso, Federico
72

Gmachl, Claire
65

Hutchinson, Albert L.
32

Sirtori, Carlo
31

Baillargeon, James N.
20

Tredicucci, Alessandro
13

Sergent, A. Michael
12

Chu, SNG
12

Dutta, Niloy K.
11

Morkoç, Hadis
10

Colombelli, Raffaele
9

Wang, Yeong Her
9

Troccoli, Mariano
8

Chemla, Daniel S.