Bimberg, Dieter

Lu C.-Y.; Chang S.-W.; Chuang S. L.; Germann T. D.; Pohl U. W.; Bimberg D.

Metal‐Cavity Surface‐Emitting Microlaser

Nowozin T.; Marent A.; Hönig G.; Schliwa A.; Bimberg D.; Beckel A.; Marquardt B.; Lorke A.; Geller M.

Time-resolved high-temperature detection with single charge resolution of holes tunneling into many-particle quantum dot states

Lu Chien-Yao; Chuang Shun Lien; Mutig Alex; Bimberg Dieter

Metal-cavity surface-emitting microlaser with hybrid metal-DBR reflectors

Lu C.-Y.; Chang S.-W.; Chuang S. L.; Germann T. D.; Pohl U. W.; Bimberg D.

Metal‐Cavity Surface‐Emitting Microlaser

Nowozin T.; Marent A.; Hönig G.; Schliwa A.; Bimberg D.; Beckel A.; Marquardt B.; Lorke A.; Geller M.

Time-resolved high-temperature detection with single charge resolution of holes tunneling into many-particle quantum dot states

Lu Chien-Yao; Chuang Shun Lien; Mutig Alex; Bimberg Dieter

Metal-cavity surface-emitting microlaser with hybrid metal-DBR reflectors

Lenz Andrea; Eisele Holger; Becker Jonas; Schulze Jan-Hindrik; Germann Tim D.; Luckert Franziska; Pötschke Konstantin; Lenz Ernst; Ivanova Lena; Strittmatter André; Bimberg Dieter; Pohl Udo W.; Dähne Mario

Atomic structure and optical properties of InAs submonolayer depositions in GaAs

Moser P.; Hofmann W.; Wolf P.; Lott J. A.; Larisch G.; Payusov A.; Ledentsov N. N.; Bimberg D.

81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

Steudle Gesine A.; Knauer Sebastian; Herzog Ulrike; Stock Erik; Haisler Vladimir A.; Bimberg Dieter; Benson Oliver

Experimental optimal maximum-confidence discrimination and optimal unambiguous discrimination of two mixed single-photon states

Franke D.; Moehrle M.; Sigmund A.; Kuenzel H.; Pohl U. W.; Bimberg D.

Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers

Meuer Christian; Schmidt-Langhorst Carsten; Bonk René; Schmeckebier Holger; Arsenijević Dejan; Fiol Gerrit; Galperin Andrey; Leuthold Juerg; Schubert Colja; Bimberg Dieter

80 Gb/s wavelength conversion using a quantum-dot semiconductor optical amplifier and optical filtering

Uskov Alexander V.; Meuer Christian; Schmeckebier Holger; Bimberg Dieter

Auger Capture Induced Carrier Heating in Quantum Dot Lasers and Amplifiers

Meuer Christian; Schmidt-Langhorst Carsten; Schmeckebier Holger; Fiol Gerrit; Arsenijević Dejan; Schubert Colja; Bimberg Dieter

40 Gb/s wavelength conversion via four-wave mixing in a quantum-dot semiconductor optical amplifier

Olejniczak Lukasz; Panajotov Krassimir; Thienpont Hugo; Sciamanna Marc; Mutig Alex; Hopfer Friedhelm; Bimberg Dieter

Polarization switching and polarization mode hopping in quantum dot vertical-cavity surface-emitting lasers

Franke Dieter; Kreissl Jochen; Rehbein Wolfgang; Wenning Felix; Kuenzel Harald; Pohl Udo W.; Bimberg Dieter

Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers

Radziunas Mindaugas; Vladimirov Andrei G.; Viktorov Evgeny A.; Fiol Gerrit; Schmeckebier Holger; Bimberg Dieter

Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers

Stock Erik; Dachner Matthias-Rene; Warming Till; Schliwa Andrei; Lochmann Anatol; Hoffmann Axel; Toropov Aleksandr I.; Bakarov Askhat K.; Derebezov Ilya A.; Richter Marten; Haisler Vladimir A.; Knorr Andreas; Bimberg Dieter

Acoustic and optical phonon scattering in a single In(Ga)As quantum dot

Gomis-Bresco J.; Dommers-Völkel S.; Schöps O.; Kaptan Y.; Dyatlova O.; Bimberg D.; Woggon U.

Time-resolved amplified spontaneous emission in quantum dots

Baumgartner A.; Stock E.; Patanè A.; Eaves L.; Henini M.; Bimberg D.

Optical Imaging of Electrical Carrier Injection into Individual InAs Quantum Dots

Lenz Andrea; Eisele Holger; Becker Jonas; Ivanova Lena; Lenz Ernst; Luckert Franziska; Pötschke Konstantin; Strittmatter André; Pohl Udo W.; Bimberg Dieter; Dähne Mario

Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs

Mutig A.; Lott J. A.; Blokhin S. A.; Wolf P.; Moser P.; Hofmann W.; Nadtochiy A. M.; Payusov A.; Bimberg D.

Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers

Vladimirov Andrei G.; Bandelow Uwe; Fiol Gerrit; Arsenijević Dejan; Kleinert Moritz; Bimberg Dieter; Pimenov Alexander; Rachinskii Dmitrii

Dynamical regimes in a monolithic passively mode-locked quantum dot laser

Ostapenko Irina A.; Hönig Gerald; Kindel Christian; Rodt Sven; Strittmatter André; Hoffmann Axel; Bimberg Dieter

Large internal dipole moment in InGaN/GaN quantum dots

Lu Chien-Yao; Chang Shu-Wei; Chuang Shun Lien; Germann Tim D.; Bimberg Dieter

Metal-cavity surface-emitting microlaser at room temperature

Kindel C.; Kako S.; Kawano T.; Oishi H.; Arakawa Y.; Hönig G.; Winkelnkemper M.; Schliwa A.; Hoffmann A.; Bimberg D.

Exciton fine-structure splitting in GaN/AlN quantum dots

Plumhof J. D.; Křápek V.; Wang L.; Schliwa A.; Bimberg D.; Rastelli A.; Schmidt O. G.

Experimental investigation and modeling of the fine structure splitting of neutral excitons in strain-free GaAs/AlxGa1-xAs quantum dots

Stock Erik; Warming Till; Ostapenko Irina; Rodt Sven; Schliwa Andrei; Töfflinger Jan Amaru; Lochmann Anatol; Toropov Aleksandr I.; Moshchenko Sergej A.; Dmitriev Dimitry V.; Haisler Vladimir A.; Bimberg Dieter

Single-photon emission from InGaAs quantum dots grown on (111) GaAs

Schmeckebier H.; Fiol G.; Meuer C.; Arsenijević D.; Bimberg D.

Complete pulse characterization of quantum dot mode-locked lasers suitable for optical communication up to 160 Gbit/s

Fiol G.; Arsenijević D.; Bimberg D.; Vladimirov A. G.; Wolfrum M.; Viktorov E. A.; Mandel Paul

Hybrid mode-locking in a 40 GHz monolithic quantum dot laser

Marent A.; Nowozin T.; Gelze J.; Luckert F.; Bimberg D.

Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

Mutig A.; Lott J. A.; Shchukin V. A.; Blokhin S. A.; Nadtochiy A. M.; Fiol G.; Ledentsov N. N.; Bimberg D.

Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers

Wang Lijuan; Rastelli Armando; Bimberg Dieter; Schliwa Andrei; Horton Felicity; Ding Fei; Křápek Vlastimil; Schmidt Oliver G.

Self-assembled quantum dots with tunable thickness of the wetting layer: Role of vertical confinement on interlevel spacing

Lochmann A.; Stock E.; Münnix M. C.; Töfflinger J. A.; Unrau W.; Bimberg D.; Toropov A.; Bakarov A.; Haisler V.

Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters

Siebert E.; Warming T.; Schliwa A.; Stock E.; Winkelnkemper M.; Rodt S.; Bimberg D.

Spectroscopic access to single-hole energies in InAs/GaAs quantum dots

Warming T.; Siebert E.; Schliwa A.; Stock E.; Zimmermann R.; Bimberg D.

Hole-hole and electron-hole exchange interactions in single InAs/GaAs quantum dots

Schliwa Andrei; Winkelnkemper Momme; Bimberg Dieter

Few-particle energies versus geometry and composition of InxGa1-x;As/GaAs self-organized quantum dots

Nowozin T.; Marent A.; Geller M.; Bimberg D.; Akçay N.; Öncan N.

Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure

Kim J.; Meuer C.; Bimberg D.; Eisenstein G.

Role of carrier reservoirs on the slow phase recovery of quantum dot semiconductor optical amplifiers

Gomis-Bresco J.; Schöll E.; Richter M.; Malic E.; Bimberg D.; Laemmlin M.; Woggon U.; Temnov V. V.; Dommers S.; Knorr A.

Impact of Coulomb Scattering on the Ultrafast Gain Recovery in InGaAs Quantum Dots

Posilovic K.; Kettler T.; Shchukin V. A.; Ledentsov N. N.; Pohl U. W.; Bimberg D.; Fricke J.; Ginolas A.; Erbert G.; Tränkle G.; Jönsson J.; Weyers M.

Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

Meuer C.; Kim J.; Laemmlin M.; Liebich S.; Bimberg D.; Capua A.; Eisenstein G.; Bonk R.; Vallaitis T.; Leuthold J.; Kovsh A. R.; Krestnikov I. L.

40 GHz small-signal cross-gain modulation in 1.3 μ;m quantum dot semiconductor optical amplifiers

Germann T. D.; Strittmatter A.; Pohl J.; Pohl U. W.; Bimberg D.; Rautiainen J.; Guina M.; Okhotnikov O. G.

Temperature-stable operation of a quantum dot semiconductor disk laser

Lüdge Kathy; Knorr Andreas; Bimberg Dieter; Kuntz Matthias; Hövel Philipp; Malić Ermin; Bormann Moritz J. P.; Schöll Eckehard

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

Bansal Bhavtosh; Bimberg D.; Geller M.; Hayne M.; Moshchalkov V. V.

Excitonic Mott transition in type-II quantum dots

Meuer Christian; Kim Jungho; Laemmlin Matthias; Liebich Sven; Capua Amir; Eisenstein Gadi; Kovsh Alexey R.; Mikhrin Sergey S.; Krestnikov Igor L.; Bimberg Dieter

Static gain saturation in quantum dot semiconductor optical amplifiers

Germann T. D.; Strittmatter A.; Pohl J.; Pohl U. W.; Bimberg D.; Rautiainen J.; Guina M.; Okhotnikov O. G.

High-power semiconductor disk laser based on InAs/;GaAs submonolayer quantum dots

Geller M.; Marent A.; Nowozin T.; Bimberg D.; Akçay N.; Öncan N.

A write time of 6 ;ns for quantum dot–based memory structures

Rinke Patrick; Winkelnkemper M.; Qteish A.; Bimberg D.; Neugebauer J.; Scheffler M.

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

Feucker M.; Seguin R.; Rodt S.; Hoffmann A.; Bimberg D.

Decay dynamics of neutral and charged excitonic complexes in single InAs/;GaAs quantum dots

Klimin S. N.; Fomin V. M.; Devreese J. T.; Bimberg D.

Model of Raman scattering in self-assembled InAs/;GaAs quantum dots

Vallaitis T.; Koos C.; Bonk R.; Freude W.; Laemmlin M.; Meuer C.; Bimberg D.; Leuthold J.

Slow and fast dynamics of gain and phase in a quantum dot semiconductor optical amplifier

Marent A.; Geller M.; Schliwa A.; Feise D.; Pötschke K.; Bimberg D.; Akçay N.; Öncan N.

10⁶ ;years extrapolated hole storage time in GaSb/;AlAs quantum dots

Karachinsky L. Ya.; Kuntz M.; Fiol G.; Shchukin V. A.; Ledentsov N. N.; Bimberg D.; Kovsh A. R.; Mikhrin S. S.; Novikov I. I.; Shernyakov Yu. M.; Maximov M. V.

High-power wavelength stabilized 970 ;nm tilted cavity laser with a 41.3 ;dB side mode suppression ratio

Viktorov E. A.; Mandel Paul; Kuntz M.; Fiol G.; Bimberg D.; Vladimirov A. G.; Wolfrum M.

Stability of the mode-locked regime in quantum dot lasers

Schliwa Andrei; Winkelnkemper Momme; Bimberg Dieter

Impact of size, shape, and composition on piezoelectric effects and electronic properties of In(Ga)As/;GaAs quantum dots

Even J.; Doré F.; Cornet C.; Pedesseau L.; Schliwa A.; Bimberg D.

Semianalytical evaluation of linear and nonlinear piezoelectric potentials for quantum nanostructures with axial symmetry

Blokhin S. A.; Sakharov A. V.; Nadtochy A. M.; Kulagina M. M.; Zadiranov Yu. M.; Gordeev N. Yu.; Maximov M. V.; Ustinov V. M.; Ledentsov N. N.; Stock E.; Warming T.; Bimberg D.

The impact of thermal effects on emission characteristics of asymmetrical AlGAO-waveguide microdisks based on quantum dots

Scholz M.; Haisler V. A.; Hopfer F.; Schulz O.; Stock E.; Lochmann A.; Kalagin A. K.; Bakarov A. K.; Toropov A. I.; Benson O.; Büettner S.; Bimberg D.

Non-classical light emission from a single electrically driven quantum dot

Winkelnkemper M.; Seguin R.; Rodt S.; Schliwa A.; Reißmann L.; Strittmatter A.; Hoffmann A.; Bimberg D.

Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Mlinar V.; Schliwa A.; Bimberg D.; Peeters F. M.

Theoretical study of electronic and optical properties of inverted GaAs/;AlxGa1-x;As quantum dots with smoothed interfaces in an external magnetic field

Capua A.; Rozenfeld L.; Mikhelashvili V.; Eisenstein G.; Kuntz M.; Laemmlin M.; Bimberg D.

Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser

Warming T.; Wieczorek W.; Geller M.; Bimberg D.; Cirlin G. E.; Zhukov A. E.; Ustinov V. M.

Spin storage and readout in self‐organized quantum dots

Seguin R.; Schliwa A.; Germann T. D.; Rodt S.; Pötschke K.; Pohl U. W.; Bimberg D.

Ex‐situ control of fine‐structure splitting and excitonic binding energies in single InAs/GaAs quantum dots

Cornet C.; Hayne M.; Schliwa A.; Doré F.; Labbé C.; Folliot H.; Even J.; Bimberg D.; Moshchalkov V. V.; Loualiche S.

Theory and experiment of InAs/InP quantum dots: from calculations to laser emission

Lifshits M. B.; Shchukin V. A.; Ledentsov N. N.; Bimberg D.

Ultimate Control of the Thermal Shift of a Tilted Cavity Laser Wavelength

Karachinsky L. Ya.; Novikov I. I.; Kettler T.; Gordeev N. Yu.; Maximov M. V.; Shernyakov Yu. M.; Kryzhanovskaya N. V.; Zhukov A. E.; Semenova E. S.; Vasil'ev A. P.; Ustinov V. M.; Fiol G.; Kuntz M.; Posilovic K.; Lochmann A.; Schulz O.; Reissmann L.; Kovsh A. R.; Mikhrin S. S.; Shchukin V. A.; Ledentsov N. N.; Bimberg D.

Competition Of Different Recombination Channels In Metamorphic 1.5 μm Range Quantum Dot Lasers On GaAs Substrate

Marent A.; Geller M.; Vasi'ev A. P.; Semenova E. S.; Zhukov A. E.; Ustinov V. M.; Bimberg D.

DRAM storage time of milliseconds demonstrated in self‐organized quantum dots

Munt T. P.; Shchukin V. A.; Jesson D. E.; Bimberg D.

Metastable states of surface nanostructure arrays studied using a Fokker-Planck equation

Bajracharya P.; Nguyen T. A.; Mackowski S.; Smith L. M.; Wagner H. P.; Pohl U. W.; Bimberg D.; Strassburg M.

Relaxation dynamics of bimodally distributed CdSe quantum dots

Dommers Sabine; Temnov Vasily V.; Woggon Ulrike; Gomis Jordi; Martinez-Pastor Juan; Laemmlin Matthias; Bimberg Dieter

Complete ground state gain recovery after ultrashort double pulses in quantum dot based semiconductor optical amplifier

Seguin R.; Schliwa A.; Germann T. D.; Rodt S.; Pötschke K.; Strittmatter A.; Pohl U. W.; Bimberg D.; Winkelnkemper M.; Hammerschmidt T.; Kratzer P.

Control of fine-structure splitting and excitonic binding energies in selected individual InAs/;GaAs quantum dots

Geller M.; Marent A.; Stock E.; Bimberg D.; Zubkov V. I.; Shulgunova I. S.; Solomonov A. V.

Hole capture into self-organized InGaAs quantum dots

Karachinsky L. Ya.; Sharon A.; Arbiv D. B.; Novikov I. I.; Shernyakov Yu. M.; Kuznetsov S. M.; Gordeev N. Yu.; Maximov M. V.; Kop'ev P. S.; Ben-Ami U.; Kettler T.; Posilovic K.; Schulz O.; Shchukin V. A.; Pohl U. W.; Ledentsov N. N.; Bimberg D.

High power GaAs/;AlGaAs lasers (λ∼850 ;nm) with ultranarrow vertical beam divergence

Rinke P.; Scheffler M.; Qteish A.; Winkelnkemper M.; Bimberg D.; Neugebauer J.

Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

Winkelnkemper Momme; Schliwa Andrei; Bimberg Dieter

Interrelation of structural and electronic properties in InxGa1-x;N/;GaN quantum dots using an eight-band k∙;p model

Hopfer F.; Mutig A.; Kuntz M.; Fiol G.; Bimberg D.; Ledentsov N. N.; Shchukin V. A.; Mikhrin S. S.; Livshits D. L.; Krestnikov I. L.; Kovsh A. R.; Zakharov N. D.; Werner P.

Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

Malić Ermin; Ahn Kwang J.; Bormann Moritz J. P.; Hövel Philipp; Schöll Eckehard; Knorr Andreas; Kuntz Matthias; Bimberg Dieter

Theory of relaxation oscillations in semiconductor quantum dot lasers

Marent A.; Geller M.; Bimberg D.; Vasi'ev A. P.; Semenova E. S.; Zhukov A. E.; Ustinov V. M.

Carrier storage time of milliseconds at room temperature in self-organized quantum dots

Hopfer F.; Kaiander I.; Lochmann A.; Mutig A.; Bognar S.; Kuntz M.; Pohl U. W.; Haisler V. A.; Bimberg D.

Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy

Kettler T.; Karachinsky L. Ya.; Ledentsov N. N.; Shchukin V. A.; Fiol G.; Kuntz M.; Lochmann A.; Schulz O.; Reissmann L.; Posilovic K.; Bimberg D.; Novikov I. I.; Shernyakov Yu. M.; Gordeev N. Yu.; Maximov M. V.; Kryzhanovskaya N. V.; Zhukov A. E.; Semenova E. S.; Vasil'ev A. P.; Ustinov V. M.; Kovsh A. R.

Degradation-robust single mode continuous wave operation of 1.46 μ;m metamorphic quantum dot lasers on GaAs substrate

Cornet C.; Schliwa A.; Even J.; Doré F.; Celebi C.; Létoublon A.; Macé E.; Paranthoën C.; Simon A.; Koenraad P. M.; Bertru N.; Bimberg D.; Loualiche S.

Electronic and optical properties of InAs/;InP quantum dots on InP(100) and InP(311)B substrates; Theory and experiment

Strittmatter A.; Germann T. D.; Kettler Th.; Posilovic K.; Pohl U. W.; Bimberg D.

Alternative precursor metal-organic chemical vapor deposition of InGaAs/;GaAs quantum dot laser diodes with ultralow threshold at 1.25 μ;m

Novikov I. I.; Karachinsky L. Ya.; Maximov M. V.; Shernyakov Yu. M.; Kuznetsov S. M.; Gordeev N. Yu.; Shchukin V. A.; Kop'ev P. S.; Ledentsov N. N.; Ben-Ami U.; Kalosha V. P.; Sharon A.; Kettler T.; Posilovic K.; Bimberg D.; Mikhelashvili V.; Eisenstein G.

Single mode cw operation of 658 ;nm AlGaInP lasers based on longitudinal photonic band gap crystal

Geller M.; Stock E.; Kapteyn C.; Sellin R. L.; Bimberg D.

Tunneling emission from self-organized In(Ga)As/;GaAs quantum dots observed via time-resolved capacitance measurements

Wieczorek W.; Warming T.; Geller M.; Bimberg D.; Cirlin G. E.; Zhukov A. E.; Ustinov V. M.

Charge and spin storage in self-organized quantum dots

Seguin R.; Schliwa A.; Rodt S.; Pötschke K.; Pohl U. W.; Bimberg D.

Size-Dependent Fine-Structure Splitting in Self-Organized InAs/GaAs Quantum Dots

Pohl U. W.; Pötschke K.; Schliwa A.; Guffarth F.; Bimberg D.; Zakharov N. D.; Werner P.; Lifshits M. B.; Shchukin V. A.; Jesson D. E.

Evolution of a multimodal distribution of self-organized InAs/;GaAs quantum dots

Vine D. J.; Jesson D. E.; Morgan M. J.; Shchukin V. A.; Bimberg D.

Shape transitions of metastable surface nanostructures

Majid A.; Zafar Iqbal M.; Dadgar A.; Bimberg D.

Osmium impurity-related deep levels in n-type GaAs

Schliwa A.; Rodt S.; Pötschke K.; Guffarth F.; Bimberg D.

Onion‐like growth of and inverted many‐particle energies in quantum dots

Seguin R.; Rodt S.; Winkelnkemper M.; Schliwa A.; Strittmatter A.; Reißmann L.; Bimberg D.; Hahn E.; Gerthsen D.

Many‐particle states in single InGaN/GaN quantum dots grown on Si‐substrates

Dworzak M.; Bartel T.; Strassburg M.; Hoffmann A.; Strittmatter A.; Bimberg D.

Redistribution of excitons localized in InGaN quantum dot structures

Paarmann A.; Guffarth F.; Warming T.; Hoffmann A.; Bimberg D.

Local Phonon Modes in InAs/GaAs Quantum Dots

Warming T.; Wieczorek W.; Geller M.; Zhukov A.; Ustinov V. M.; Bimberg D.

Spectral hole burning by storage of electrons or holes

Iqbal M. Zafar; Majid A.; Dadgar A.; Bimberg D.

Deep levels in osmium doped p‐type GaAs grown by metal organic chemical vapor deposition

Majid A.; Iqbal M. Zafar; Dadgar A.; Bimberg D.

Deep levels in Ruthenium doped p‐type MOCVD GaAs

Li T.; Hahn E.; Gerthsen D.; Rosenauer A.; Strittmatter A.; Reißmann L.; Bimberg D.

Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope

Rodt S.; Schliwa A.; Pötschke K.; Guffarth F.; Bimberg D.

Correlation of structural and few-particle properties of self-organized InAs/;GaAs quantum dots

Shchukin V. A.; Munt T. P.; Jesson D. E.; Bimberg D.

Instability to Ostwald ripening of an array of coherently strained faceted ridges

Temko Y.; Suzuki T.; Xu M. C.; Pötschke K.; Bimberg D.; Jacobi K.

InAs quantum dots on GaAs(2511)B: STM and photoluminescence studies

Heitz R.; Guffarth F.; Pötschke K.; Schliwa A.; Bimberg D.; Zakharov N. D.; Werner P.

Shell-like formation of self-organized InAs/;GaAs quantum dots

Choi Y.-S.; Sellin R. L.; Hopfer F.; Kaiander I. N.; Lee Y.-H.; Park H.-G.; Kim S.-H.; Kim S.-K.; Bimberg D.

Lithographic tuning of photonic-crystal unit-cell resonators with InGaAs/;GaAs quantum dots emitting at 1.2 μ;m

Timm R.; Eisele H.; Lenz A.; Becker S. K.; Grabowski J.; Kim T.-Y.; Müller-Kirsch L.; Pötschke K.; Pohl U. W.; Bimberg D.; Dähne M.

Structure and intermixing of GaSb/GaAs quantum dots

Otto R.; Kirmse H.; Häusler I.; Neumann W.; Rosenauer A.; Bimberg D.; Müller-Kirsch L.

Determination of composition and strain field of a III/V quaternary quantum dot system

Lenz A.; Eisele H.; Timm R.; Becker S. K.; Sellin R. L.; Pohl U. W.; Bimberg D.; Dähne M.

Nanovoids in InGaAs/;GaAs quantum dots observed by cross-sectional scanning tunneling microscopy

Hanke M.; Grigoriev D.; Schmidbauer M.; Schäfer P.; Köhler R.; Sellin R. L.; Pohl U. W.; Bimberg D.

Vertical composition gradient in InGaAs/;GaAs alloy quantum dots as revealed by high-resolution x-ray diffraction

Bartel T.; Dworzak M.; Strassburg M.; Hoffmann A.; Strittmatter A.; Bimberg D.

Recombination dynamics of localized excitons in InGaN quantum dots

Munt T. P.; Jesson D. E.; Shchukin V. A.; Bimberg D.

Manipulating the size distributions of quantum dots associated with strain-renormalized surface energy

Shchukin V. A.; Bimberg D.; Munt T. P.; Jesson D. E.

Elastic interaction and self-relaxation energies of coherently strained conical islands

Hayne M.; Razinkova O.; Bersier S.; Heitz R.; Müller-Kirsch L.; Geller M.; Bimberg D.; Moshchalkov V. V.

Optically induced charging effects in self-assembled GaSb/;GaAs quantum dots

Kuntz M.; Fiol G.; Lämmlin M.; Bimberg D.; Thompson M. G.; Tan K. T.; Marinelli C.; Penty R. V.; White I. H.; Ustinov V. M.; Zhukov A. E.; Shernyakov Yu. M.; Kovsh A. R.

35 ;GHz mode-locking of 1.3 μ;m quantum dot lasers

Slepyan G. Ya.; Magyarov A.; Maksimenko S. A.; Hoffmann A.; Bimberg D.

Rabi oscillations in a semiconductor quantum dot: Influence of local fields

Seguin R.; Rodt S.; Strittmatter A.; Reißmann L.; Bartel T.; Hoffmann A.; Bimberg D.; Hahn E.; Gerthsen D.

Multi-excitonic complexes in single InGaN quantum dots

Kaiander I. N.; Sellin R. L.; Kettler T.; Ledentsov N. N.; Bimberg D.; Zakharov N. D.; Werner P.

1.24 μ;m InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

Jesson D. E.; Munt T. P.; Shchukin V. A.; Bimberg D.

Tunable Metastability of Surface Nanostructure Arrays

Gehrig E.; Hess O.; Ribbat C.; Sellin R. L.; Bimberg D.

Dynamic filamentation and beam quality of quantum-dot lasers

Schallenberg T.; Molenkamp L. W.; Rodt S.; Seguin R.; Bimberg D.; Karczewski G.

In situ area-controlled self-ordering of InAs nanostructures

Jesson D. E.; Munt T. P.; Shchukin V. A.; Bimberg D.

Suppression of coalescence during the coarsening of quantum dot arrays

Uskov A. V.; O'Reilly E. P.; McPeake D.; Ledentsov N. N.; Bimberg D.; Huyet G.

Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

Schallenberg T.; Bimberg D.; Heitz R.; Rodt S.; Molenkamp L. W.; Schmidt G.; Borzenko T.; Karczewski G.

In situ size-control of CdZnSe nano-islands using shadow masks

Schneider S.; Borri P.; Langbein W.; Woggon U.; Förstner J.; Knorr A.; Sellin R. L.; Ouyang D.; Bimberg D.

Self-induced transparency in InGaAs quantum-dot waveguides

Krestnikov Igor L.; Hoffmann Axel; Christen Jürgen; Ledentsov Nikolai N.; Strittmatter Andrè; Strassburg Martin; Bimberg Dieter

Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

Majid A.; Dadgar A.; Zafar Nasim; Ali Akbar; Khan S. Haidar; Iqbal M. Zafar; Bimberg D.

Characteristics of deep levels associated with rhodium impurity in n-type GaAs

Schallenberg T.; Faschinger W.; Karczewski G.; Molenkamp L. W.; Türck V.; Rodt S.; Heitz R.; Bimberg D.; Obert M.; Bacher G.; Forchel A.

In situ lateral growth control of optically efficient quantum structures

Rodt S.; Heitz R.; Schliwa A.; Sellin R. L.; Guffarth F.; Bimberg D.

Repulsive exciton-exciton interaction in quantum dots

Hayne M.; Maes J.; Bersier S.; Moshchalkov V. V.; Schliwa A.; Müller-Kirsch L.; Kapteyn C.; Heitz R.; Bimberg D.

Electron localization by self-assembled GaSb/GaAs quantum dots

Schallenberg T.; Borzenko T.; Schmidt G.; Obert M.; Bacher G.; Schumacher C.; Karczewski G.; Molenkamp L. W.; Rodt S.; Heitz R.; Bimberg D.

Controlled self-assembly of semiconductor quantum dots using shadow masks

Rodt S.; Hoffmann A.; Dworzak M.; Straßburg M.; Pohl U. W.; Engelhardt R.; Guffarth F.; Heitz R.; Türck V.; Bimberg D.

Lateral carrier transfer in CdxZn1-x;Se/ZnSySe1-y; quantum dot layers

Guffarth F.; Heitz R.; Schliwa A.; Stier O.; Geller M.; Kapteyn C. M. A.; Sellin R.; Bimberg D.

Few-particle interactions in charged InxGa1-;xAs/GaAs quantum dots

Geller M.; Kapteyn C.; Müller-Kirsch L.; Heitz R.; Bimberg D.

450 meV hole localization in GaSb/GaAs quantum dots

Guffarth F.; Heitz R.; Geller M.; Kapteyn C.; Born H.; Sellin R.; Hoffmann A.; Bimberg D.; Sobolev N. A.; Carmo M. C.

Radiation hardness of InGaAs/GaAs quantum dots

Shchukin V. A.; Bimberg D.; Munt T. P.; Jesson D. E.

Metastability of Ultradense Arrays of Quantum Dots

Ribbat Ch.; Sellin R. L.; Kaiander I.; Hopfer F.; Ledentsov N. N.; Bimberg D.; Kovsh A. R.; Ustinov V. M.; Zhukov A. E.; Maximov M. V.

Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Sellin R. L.; Kaiander I.; Ouyang D.; Kettler T.; Pohl U. W.; Bimberg D.; Zakharov N. D.; Werner P.

Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

Lenz A.; Timm R.; Eisele H.; Hennig Ch.; Becker S. K.; Sellin R. L.; Pohl U. W.; Bimberg D.; Dähne M.

Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix

Schulz Oliver; Strassburg Matthias; Rissom Thorsten; Pohl Udo W.; Bimberg Dieter; Klude Matthias; Hommel Detlef

Post-growth p-type doping enhancement for ZnSe-based lasers using a Li3N interlayer

Slepyan G. Ya.; Maksimenko S. A.; Hoffmann A.; Bimberg D.

Quantum optics of a quantum dot: Local-field effects

Kuntz M.; Ledentsov N. N.; Bimberg D.; Kovsh A. R.; Ustinov V. M.; Zhukov A. E.; Shernyakov Yu. M.

Spectrotemporal response of 1.3 μm quantum-dot lasers

Borri P.; Langbein W.; Schneider S.; Woggon U.; Sellin R. L.; Ouyang D.; Bimberg D.

Relaxation and Dephasing of Multiexcitons in Semiconductor Quantum Dots

Krestnikov I. L.; Ledentsov N. N.; Hoffmann A.; Bimberg D.; Sakharov A. V.; Lundin W. V.; Tsatsul'nikov A. F.; Usikov A. S.; Alferov Zh. I.; Musikhin Yu. G.; Gerthsen D.

Quantum dot origin of luminescence in InGaN-GaN structures

Haisler V. A.; Hopfer F.; Sellin R. L.; Lochmann A.; Fleischer K.; Esser N.; Richter W.; Ledentsov N. N.; Bimberg D.; Möller C.; Grote N.

Micro-Raman studies of vertical-cavity surface-emitting lasers with AlxOy/GaAs distributed Bragg reflectors

Ouyang D.; Heitz R.; Ledentsov N. N.; Bognár S.; Sellin R. L.; Ribbat Ch.; Bimberg D.

Lateral-cavity spectral hole burning in quantum-dot lasers

Borri P.; Ouyang D.; Sellin R. L.; Woggon U.; Schneider S.; Langbein W.; Bimberg D.

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Litvinov D.; Ledentsov N. N.; Bimberg D.; Ljubas G. A.; Bolotov V. V.; Volodin V. A.; Efremov M. D.; Preobrazhenskii V. V.; Semyagin B. R.; Rosenauer A.; Gerthsen D.; Soshnikov I. P.

Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface

Grundmann M.; Heitz R.; Bimberg D.

Comment on “Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots” [Appl. Phys. Lett. ;79, 3912 (2001)]

Ribbat Ch.; Bognar S.; Sellin R.; Bimberg D.

Spectral mode dynamics of short cavity quantum-dot lasers

Kissel H.; Zeimer U.; Maaßdorf A.; Weyers M.; Heitz R.; Bimberg D.; Mazur Yu. I.; Tarasov G. G.; Kunets Vas. P.; Müller U.; Zhuchenko Z. Ya.; Masselink W. T.

Behavior of the Fermi-edge singularity in the photoluminescence spectra of a high-density two-dimensional electron gas

Musikhin Yu. G.; Gerthsen D.; Bedarev D. A.; Bert N. A.; Lundin W. V.; Tsatsul'nikov A. F.; Sakharov A. V.; Usikov A. S.; Alferov Zh. I.; Krestnikov I. L.; Ledentsov N. N.; Hoffmann A.; Bimberg D.

Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures

Ledentsov Nikolai N.; Bimberg Dieter; Ustinov Victor M.; Alferov Zhores I.; Lott James A.

Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

Meixner M.; Schöll E.; Shchukin V. A.; Bimberg D.

Erratum: Self-Assembled Quantum Dots: Crossover from Kinetically Controlled to Thermodynamically Limited Growth [Phys. Rev. Lett. ; 87, 236101 (2001)]

Tranitz H.-P.; Wagner H. P.; Engelhardt R.; Pohl U. W.; Bimberg D.

Thermal redistribution and dephasing of localized excitons in CdSe/ZnSSe quantum island structures

Goede K.; Weber A.; Guffarth F.; Kapteyn C. M. A.; Heinrichsdorff F.; Heitz R.; Bimberg D.; Grundmann M.

Calorimetric investigation of intersublevel transitions in charged quantum dots

Heitz R.; Born H.; Guffarth F.; Stier O.; Schliwa A.; Hoffmann A.; Bimberg D.

Existence of a phonon bottleneck for excitons in quantum dots

Meixner M.; Schöll E.; Shchukin V. A.; Bimberg D.

Self-Assembled Quantum Dots: Crossover from Kinetically Controlled to Thermodynamically Limited Growth

Ryu H. Y.; Lee Y. H.; Sellin R. L.; Bimberg D.

Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature

Borri P.; Schneider S.; Langbein W.; Woggon U.; Zhukov A. E.; Ustinov V. M.; Ledentsov N. N.; Alferov Zh. I.; Ouyang D.; Bimberg D.

Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature

Borri P.; Ouyang D.; Sellin R. L.; Woggon U.; Schneider S.; Langbein W.; Bimberg D.

Ultralong Dephasing Time in InGaAs Quantum Dots

Slepyan G. Ya.; Maksimenko S. A.; Kalosha V. P.; Hoffmann A.; Bimberg D.

Effective boundary conditions for planar quantum dot structures

Guffarth F.; Heitz R.; Schliwa A.; Stier O.; Ledentsov N. N.; Kovsh A. R.; Ustinov V. M.; Bimberg D.

Strain engineering of self-organized InAs quantum dots

Müller-Kirsch L.; Heitz R.; Pohl U. W.; Bimberg D.; Häusler I.; Kirmse H.; Neumann W.

Temporal evolution of GaSb/GaAs quantum dot formation

Asryan L. V.; Suris R. A.; Stier O.; Ledentsov N. N.; Grundmann M.; Bimberg D.

Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser

Söderström D.; Lourdudoss S.; Wallnäs M.; Dadgar A.; Stenzel O.; Bimberg D.; Schumann H.

Studies on Ruthenium-Doped InP Growth by Low-Pressure Hydride Vapor-Phase Epitaxy

Müller-Kirsch L.; Heitz R.; Schliwa A.; Stier O.; Bimberg D.; Kirmes H.; Neumann W.

Erratum: “Many-particle effects in type II quantum dots” [Appl. Phys. Lett. ;78, 1418 (2001)]

Borri P.; Langbein W.; Hvam J. M.; Mao M.-H.; Heinrichsdorff F.; Bimberg D.

Coherent versus incoherent dynamics in InAs quantum-dot active wave guides

Söderström D.; Lourdudoss S.; Wallnäs M.; Dadgar A.; Stenzel O.; Bimberg D.; Schumann H.

Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy

Bimberg D.; Grundmann M.; Heinrichsdorff F.; Ledentsov N. N.; Ribbat Ch.; Sellin R.; Alferov Zh. I.; Kop'ev P. S.; Maximov M. V.; Ustinov V. M.; Zhukov A. E.; Lott J. A.

Quantum dot lasers: Theory and experiment

Müller-Kirsch L.; Heitz R.; Schliwa A.; Stier O.; Bimberg D.; Kirmse H.; Neumann W.

Many-particle effects in type II quantum dots

Sellin R. L.; Ribbat Ch.; Grundmann M.; Ledentsov N. N.; Bimberg D.

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Strittmatter A.; Rodt S.; Reißmann L.; Bimberg D.; Schröder H.; Obermeier E.; Riemann T.; Christen J.; Krost A.

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

Kapteyn C. M. A.; Lion M.; Heitz R.; Bimberg D.; Miesner C.; Asperger T.; Brunner K.; Abstreiter G.

Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy

Heitz R.; Madhukar A.; Grundmann M.; Mukhametzhanov I.; Guffarth F.; Bimberg D.

Many-body effects on the optical spectra of InAs/GaAs quantum dots

Maximov M. V.; Tsatsul'nikov A. F.; Volovik B. V.; Sizov D. S.; Shernyakov Yu. M.; Kaiander I. N.; Zhukov A. E.; Kovsh A. R.; Mikhrin S. S.; Ustinov V. M.; Alferov Zh. I.; Heitz R.; Shchukin V. A.; Ledentsov N. N.; Bimberg D.; Musikhin Yu. G.; Neumann W.

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

Heitz R.; Born H.; Hoffmann A.; Bimberg D.; Mukhametzhanov I.; Madhukar A.

Resonant Raman scattering in self-organized InAs/GaAs quantum dots

Tsatsul'nikov A. F.; Ledentsov N. N.; Merz J. L.; Mintairov A. M.; Alferov Zh. I.; Kop'ev P. S.; Bert N. A.; Ustinov V. M.; Musikhin Yu. G.; Shernyakov Yu. M.; Zhukov A. E.; Kovsh A. R.; Bimberg D.

Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm

Heitz R.; Madhukar A.; Mukhametzhanov I.; Stier O.; Bimberg D.

Quantum size effect in self-organized InAs/GaAs quantum dots

Wetzler R.; Wacker A.; Schöll E.; Kapteyn C. M. A.; Heitz R.; Bimberg D.

Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a ;pn structure

Goñi A. R.; Born H.; Heitz R.; Hoffmann A.; Thomsen C.; Heinrichsdorff F.; Bimberg D.

Magnetoluminescence Study of Annealing Effects on the Electronic Structure of Self-organized InGaAs/GaAs Quantum Dots

Zakharov N. D.; Bimberg D.; Werner P.; Gösele U.; Heitz R.; Ledentsov N. N.; Ustinov V. M.; Volovik B. V.; Alferov Zh. I.; Polyakov N. K.; Petrov V. N.; Egorov V. A.; Cirlin G. E.

Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

Grundmann Marius; Heinrichsdorff Frank; Ledentsov Nikolai N.; Ribbat Christian; Bimberg Dieter; Zhukov Alexei E.; Kovsh Alexei R.; Maximov Mikhail V.; Shernyakov Yuri M.; Lifshits Daniel A.; Ustinov Victor M.; Alferov Zhores I.

Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications

Türck V.; Rodt S.; Stier O.; Heitz R.; Engelhardt R.; Pohl U. W.; Bimberg D.; Steingrüber R.

Effect of random field fluctuations on excitonic transitions of individual CdSe quantum dots

Kapteyn C. M. A.; Lion M.; Heitz R.; Bimberg D.; Brunkov P. N.; Volovik B. V.; Konnikov S. G.; Kovsh A. R.; Ustinov V. M.

Hole and electron emission from InAs quantum dots

Borri P.; Langbein W.; Hvam J. M.; Heinrichsdorff F.; Mao M.-H.; Bimberg D.

Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection

Martinet E.; Grundmann M.; Stier O.; Kapon E.; Biasiol G.; Reinhardt F.; Dupertuis M.-A.; Bimberg D.

Separation of strain and quantum-confinement effects in the optical spectra of quantum wires

Strassburg M.; Deniozou Th.; Hoffmann A.; Heitz R.; Pohl U. W.; Bimberg D.; Litvinov D.; Rosenauer A.; Gerthsen D.; Schwedhelm S.; Lischka K.; Schikora D.

Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

Heinrichsdorff F.; Ribbat Ch.; Grundmann M.; Bimberg D.

High-power quantum-dot lasers at 1100 nm

Schikora D.; Schwedhelm S.; As D. J.; Lischka K.; Litvinov D.; Rosenauer A.; Gerthsen D.; Strassburg M.; Hoffmann A.; Bimberg D.

Investigations on the Stranski–Krastanow growth of CdSe quantum dots

Grundmann M.; Stier O.; Schliwa A.; Bimberg D.

Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires

Yu P.; Langbein W.; Leosson K.; Hvam J. M.; Ledentsov N. N.; Bimberg D.; Ustinov V. M.; Egorov A. Yu.; Zhukov A. E.; Tsatsul'nikov A. F.; Musikhin Yu. G.

Optical anisotropy in vertically coupled quantum dots

Heitz R.; Mukhametzhanov I.; Stier O.; Madhukar A.; Bimberg D.

Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots

Kapteyn C. M. A.; Heinrichsdorff F.; Stier O.; Heitz R.; Grundmann M.; Zakharov N. D.; Bimberg D.; Werner P.

Electron escape from InAs quantum dots

Engelhardt R.; Pohl U. W.; Bimberg D.; Litvinov D.; Rosenauer A.; Gerthsen D.

Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures

Krost A.; Bläsing J.; Heinrichsdorff F.; Bimberg D.

In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis

Huhse D.; Reimann O.; Böttcher E. H.; Bimberg D.

Generation of 290 fs laser pulses by self-seeding and soliton compression

Maximov M. V.; Tsatsul'nikov A. F.; Volovik B. V.; Bedarev D. A.; Egorov A. Yu.; Zhukov A. E.; Kovsh A. R.; Bert N. A.; Ustinov V. M.; Kop'ev P. S.; Alferov Zh. I.; Ledentsov N. N.; Bimberg D.; Soshnikov I. P.; Werner P.

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

Zhukov A. E.; Kovsh A. R.; Maleev N. A.; Mikhrin S. S.; Ustinov V. M.; Tsatsul'nikov A. F.; Maximov M. V.; Volovik B. V.; Bedarev D. A.; Shernyakov Yu. M.; Kop'ev P. S.; Alferov Zh. I.; Ledentsov N. N.; Bimberg D.

Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

Krestnikov I. L.; Straßburg M.; Caesar M.; Hoffmann A.; Pohl U. W.; Bimberg D.; Ledentsov N. N.; Kop'ev P. S.; Alferov Zh. I.; Litvinov D.; Rosenauer A.; Gerthsen D.

Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots

Borri P.; Langbein W.; Mørk J.; Hvam J. M.; Heinrichsdorff F.; Mao M.-H.; Bimberg D.

Dephasing in InAs/GaAs quantum dots

Krestnikov I. L.; Lundin W. V.; Sakharov A. V.; Semenov V. A.; Usikov A. S.; Tsatsul'nikov A. F.; Alferov Zh. I.; Ledentsov N. N.; Hoffmann A.; Bimberg D.

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

Eisele H.; Flebbe O.; Kalka T.; Preinesberger C.; Heinrichsdorff F.; Krost A.; Bimberg D.; Dähne-Prietsch M.

Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

Shchukin Vitaliy A.; Bimberg Dieter

Spontaneous ordering of nanostructures on crystal surfaces

Flebbe O.; Bimberg D.; Krost A.; Heinrichsdorff F.; Kalka T.; Eisele H.; Dähne-Prietsch M.

Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

Spithoven J. L.; Lorbacher J.; Manke I.; Heinrichsdorff F.; Krost A.; Bimberg D.; Dähne-Prietsch M.

Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots

Sakharov A. V.; Lundin W. V.; Krestnikov I. L.; Semenov V. A.; Usikov A. S.; Tsatsul'nikov A. F.; Musikhin Yu. G.; Baidakova M. V.; Alferov Zh. I.; Ledentsov N. N.; Hoffmann A.; Bimberg D.

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

Slepyan G. Ya.; Alferov Zh. I.; Krestnikov I. L.; Ledentsov N. N.; Herrmann J.; Kalosha V. P.; Maksimenko S. A.; Bimberg D.

Polarization splitting of the gain band in quantum wire and quantum dot arrays

Ustinov V. M.; Maleev N. A.; Zhukov A. E.; Kovsh A. R.; Egorov A. Yu.; Lunev A. V.; Volovik B. V.; Krestnikov I. L.; Musikhin Yu. G.; Bert N. A.; Kop'ev P. S.; Alferov Zh. I.; Ledentsov N. N.; Bimberg D.

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

Heitz R.; Ledentsov N. N.; Bimberg D.; Egorov A. Yu.; Maximov M. V.; Ustinov V. M.; Zhukov A. E.; Alferov Zh. I.; Cirlin G. E.; Soshnikov I. P.; Zakharov N. D.; Werner P.; Gösele U.

Optical properties of InAs quantum dots in a Si matrix

Strittmatter A.; Krost A.; Straßburg M.; Türck V.; Bimberg D.; Bläsing J.; Christen J.

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

Stier O.; Grundmann M.; Bimberg D.

Electronic and optical properties of strained quantum dots modeled by 8-band k∙p theory

Kollakowski St.; Strittmatter A.; Dröge E.; Böttcher E. H.; Bimberg D.; Reimann O.; Janiak K.

65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3–1.55 μm wavelength regime

Ledentsov N. N.; Tsatsul'nikov A. F.; Egorov A. Yu.; Kop'ev P. S.; Kovsh A. R.; Maximov M. V.; Ustinov V. M.; Volovik B. V.; Zhukov A. E.; Alferov Zh. I.; Krestnikov I. L.; Bimberg D.; Hoffmann A.

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

Dadgar A.; Stenzel O.; Näser A.; Zafar Iqbal M.; Bimberg D.; Schumann H.

Ruthenium: A superior compensator of InP

Grundmann M.; Stier O.; Bimberg D.

Electronic states in strained cleaved-edge-overgrowth quantum wires and quantum dots

Hatami F.; Grundmann M.; Ledentsov N. N.; Heinrichsdorff F.; Heitz R.; Böhrer J.; Bimberg D.; Ruvimov S. S.; Ustinov V. M.; Werner P.; Kop'ev P. S.; Alferov Zh. I.

Erratum: Carrier dynamics in type-II GaSb/GaAs quantum dots [Phys. Rev. B ;57, 4635 (1998)]

Kuttler M.; Strassburg M.; Pohl U. W.; Bimberg D.; Behringer M.; Hommel D.

Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering

Khan Aurangzeb; Iqbal Mohd Zafar; Qurashi Umar Saeed; Yamaguchi Masafumi; Zafar Nasim; Dadgar Armin; Bimberg D.

Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition

Shchukin V. A.; Bimberg D.; Malyshkin V. G.; Ledentsov N. N.

Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands

Maximov M. V.; Kosogov A. O.; Bimberg D.; Ledentsov N. N.; Alferov Zh. I.; Asryan L. V.; Kop'ev P. S.; Kovsh A. R.; Zhukov A. E.; Egorov A. Yu.; Ustinov V. M.; Sakharov A. V.; Lunev A. V.; Tsatsul'nikov A. F.; Shernyakov Yu. M.; Werner P.

High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Heitz R.; Kalburge A.; Xie Q.; Grundmann M.; Chen P.; Hoffmann A.; Madhukar A.; Bimberg D.

Excited states and energy relaxation in stacked InAs/GaAs quantum dots

Goñi A. R.; Stroh M.; Thomsen C.; Heinrichsdorff F.; Türck V.; Krost A.; Bimberg D.

High-gain excitonic lasing from a single InAs monolayer in bulk GaAs

Strassburg M.; Kutzer V.; Pohl U. W.; Hoffmann A.; Broser I.; Ledentsov N. N.; Bimberg D.; Rosenauer A.; Fischer U.; Gerthsen D.; Krestnikov I. L.; Maximov M. V.; Kop'ev P. S.; Alferov Zh.I.

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Hatami F.; Grundmann M.; Ledentsov N. N.; Heinrichsdorff F.; Heitz R.; Böhrer J.; Bimberg D.; Ruvimov S. S.; Werner P.; Ustinov V. M.; Kop'ev P. S.; Alferov Zh. I.

Carrier dynamics in type-II GaSb/GaAs quantum dots

Heitz R.; Kop'ev P. S.; Ustinov V. M.; Bimberg D.; Hoffmann A.; Ledentsov N. N.; Veit M.; Alferov Zh. I.

Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

Dadgar A.; Engelhardt R.; Kuttler M.; Bimberg D.

Capacitance transient study of the deep Fe acceptor in indium phosphide

Bohrer J.; Krost A.; Heitz R.; Heinrichsdorff F.; Eckey L.; Bimberg D.; Cerva H.

Erratum: “Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. ;68, 1072 (1996)]

Lemm Ch.; Kollakowski St.; Bimberg D.; Janiak K.

Reactive Ion Etching of InP/InAlGaAs/InGaAs Heterostructures

Kuttler M.; Strassburg M.; Stier O.; Pohl U. W.; Bimberg D.; Kurtz E.; Nürnberger J.; Landwehr G.; Behringer M.; Hommel D.

Doping dependent ZnCdSe/ZnSe-superlattice disordering

Heinrichsdorff F.; Mao M.-H.; Kirstaedter N.; Krost A.; Bimberg D.; Kosogov A. O.; Werner P.

Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Aigouy Lionel; Holden Todd; Pollak Fred H.; Ledentsov N. N.; Ustinov W. M.; Kop'ev P. S.; Bimberg D.

Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

Maximov Mikhail V.; Kochnev Igor V.; Shernyakov Yuri M.; Zaitsev Sergei V.; Gordeev Nikita Yu.; Tsatsul'nikov Andrew F.; Sakharov Alexey V.; Werner Peter; Kosogov Alexander O.; Bimberg Dieter; Ledentsov Nikolai N.; Alferov Zhores I.; Kop'ev Petr S.; Krestnikov Igor L.; Gösele Ulrich

InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T0=385 K) Grown by Metal Organic Chemical Vapour Deposition

Grundmann Marius; Bimberg Dieter

Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments

Heinrichsdorff Frank; Krost Alois; Kirstaedter Nils; Mao Ming-Hua; Grundmann Marius; Bimberg Dieter; Kosogov Alexander Olegovich; Werner Peter

InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Kochnev Igor V.; Werner Peter; Ruvimov Sergey S.; Kosogov Alexander O.; Bimberg Dieter; Alferov Zhores I.; Kop'ev Petr S.; Volovik Boris V.; Sakharov Alexey V.; Tsatsul'nikov Andrew F.; Maximov Mikhail V.; Ledentsov Nikolai N.; Gösele Ulrich

Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition

Darhuber Anton A.; Holy Vaclav; Stangl Julian; Bauer Günther; Krost Alois; Grundmann Marius; Bimberg Dieter; Ustinov V. M.; Kop'ev P. S.; Kosogov A. O.; Werner P.

High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots

Ledentsov N. N.; Bimberg D.; Shernyakov Yu. M.; Kochnev V.; Maximov M. V.; Sakharov A. V.; Krestnikov I. L.; Egorov A. Yu.; Zhukov A. E.; Tsatsul'nikov A. F.; Volovik B. V.; Ustinov V. M.; Kop'ev P. S.; Alferov Zh. I.; Kosogov A. O.; Werner P.

Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

Ledentsov N. N.; Krestnikov I. L.; Maximov M. V.; Ivanov S. V.; Sorokin S. L.; Kop'ev P. S.; Alferov Zh. I.; Bimberg D.; Sotomayor Torres C. M.

Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]

Grundmann M.; Bimberg D.

Theory of random population for quantum dots

Türck V.; Stier O.; Heinrichsdorff F.; Grundmann M.; Bimberg D.

Quantum wires in staggered-band-line-up single heterostructures with corrugated interfaces

Stier O.; Bimberg D.

Modeling of strained quantum wires using eight-band k∙;p theory

Darhuber A. A.; Holy V.; Stangl J.; Bauer G.; Krost A.; Heinrichsdorff F.; Grundmann M.; Bimberg D.; Ustinov V. M.; Kop'ev P. S.; Kosogov A. O.; Werner P.

Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

Grundmann M.; Bimberg D.

Formation of quantum dots in twofold cleaved edge overgrowth

Kosogov A. O.; Werner P.; Gösele U.; Ledentsov N. N.; Bimberg D.; Ustinov V. M.; Egorov A. Yu.; Zhukov A. E.; Kop'ev P. S.; Bert N. A.; Alferov Zh. I.

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

Kuttler M.; Strassburg M.; Türck V.; Heitz R.; Pohl U. W.; Bimberg D.; Kurtz E.; Landwehr G.; Hommel D.

Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering

Lowisch M.; Rabe M.; Stegemann B.; Henneberger F.; Grundmann M.; Türck V.; Bimberg D.

Zero‐dimensional excitons in (Zn,Cd)Se quantum structures

Kappelt M.; Bimberg D.

Wet Chemical Etching of High Quality V‐Grooves with {111} A Sidewalls on (001) InP

Huhse D.; Schell M.; Utz W.; Bimberg D.; Williams J. A. R.; Zhang L.; Bennion I.

Fast wavelength switching of semiconductor laser pulses by self‐seeding

Ledentsov N. N.; Shchukin V. A.; Gösele U.; Werner P.; Ruvimov S. S.; Kosogov A. O.; Borovkov A. I.; Alferov Zh. I.; Gordeev N. Yu.; Zaitsev S. V.; Kop'ev P. S.; Zhukov A. E.; Egorov A. Yu.; Ustinov V. M.; Bimberg D.; Schmidt O.; Böhrer J.; Kirstaedter N.; Grundmann M.; Heydenreich J.

Direct formation of vertically coupled quantum dots in Stranski‐Krastanow growth

Ledentsov N. N.; Krestnikov I. L.; Maximov M. V.; Ivanov S. V.; Sorokin S. L.; Kop'ev P. S.; Alferov Zh. I.; Bimberg D.; Sotomayor Torres C. M.

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

Kirstaedter N.; Schmidt O. G.; Ledentsov N. N.; Bimberg D.; Ustinov V. M.; Egorov A. Yu.; Zhukov A. E.; Maximov M. V.; Kop'ev P. S.; Alferov Zh. I.

Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

Ledentsov N. N.; Böhrer J.; Bimberg D.; Kochnev I. V.; Maximov M. V.; Kop'ev P. S.; Alferov Zh. I.; Kosogov A. O.; Ruvimov S. S.; Werner P.; Gösele U.

Formation of coherent superdots using metal‐organic chemical vapor deposition

Yang X.; Bonanni A.; Vanzetti L.; Raisanen A. D.; Brillson L. J.; Franciosi A.; Grundmann M.; Bimberg D.

Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces

Kappelt M.; Grundmann M.; Krost A.; Türck V.; Bimberg D.

InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V‐grooves

Heinrichsdorff F.; Krost A.; Grundmann M.; Bimberg D.; Kosogov A.; Werner P.

Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Kollakowski St.; Schade U.; Böttcher E. H.; Kuhl D.; Bimberg D.; Ambrée P.; Wandel K.

Silicon dioxide passivation of InP/InGaAs metal‐semiconductor‐metal photodetectors

Grundmann M.; Ledentsov N. N.; Stier O.; Böhrer J.; Bimberg D.; Ustinov V. M.; Kop'ev P. S.; Alferov Zh. I.

Nature of optical transitions in self‐organized InAs/GaAs quantum dots

Dadgar A.; Ammerlahn D.; Näser A.; Heitz R.; Kuttler M.; Bimberg D.; Baber N.; Hyeon J. Y.; Schumann H.

Deep‐level transient‐spectroscopy study of rhodium in indium phosphide

Böhrer J.; Krost A.; Heitz R.; Heinrichsdorff F.; Eckey L.; Bimberg D.; Cerva H.

Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition

Grundmann M.; Ledentsov N. N.; Stier O.; Bimberg D.; Ustinov V. M.; Kop'ev P. S.; Alferov Zh. I.

Excited states in self‐organized InAs/GaAs quantum dots; Theory and experiment

Krost A.; Heinrichsdorff F.; Bimberg D.; Darhuber A.; Bauer G.

High‐resolution x‐ray diffraction of self‐organized InGaAs/GaAs quantum dot structures

Heitz R.; Grundmann M.; Ledentsov N. N.; Eckey L.; Veit M.; Bimberg D.; Ustinov V. M.; Egorov A. Yu.; Zhukov A. E.; Kop'ev P. S.; Alferov Zh. I.

Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

Krost A.; Böhrer J.; Dadgar A.; Schnabel R. F.; Bimberg D.; Hansmann S.; Burkhard H.

High‐resolution x‐ray analysis of compressively strained 1.55 μm GaInAs/AlGaInAs multiquantum well structures near the critical thickness

Ledentsov N. N.; Böhrer J.; Beer M.; Heinrichsdorff F.; Grundmann M.; Bimberg D.; Ivanov S. V.; Meltser B. Ya.; Shaposhnikov S. V.; Yassievich I. N.; Faleev N. N.; Kop'ev P. S.; Alferov Zh. I.

Radiative states in type‐II GaSb/GaAs quantum wells

Shchukin V. A.; Ledentsov N. N.; Kop'ev P. S.; Bimberg D.

Spontaneous ordering of arrays of coherent strained islands

Grundmann M.; Stier O.; Bimberg D.

InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

Türck V.; Stier O.; Heinrichsdorff F.; Grundmann M.; Bimberg D.

Electron quantum wires in type II single heterostructures on nonplanar substrates

Hatami F.; Ledentsov N. N.; Grundmann M.; Böhrer J.; Heinrichsdorff F.; Beer M.; Bimberg D.; Ruvimov S. S.; Werner P.; Gösele U.; Heydenreich J.; Richter U.; Ivanov S. V.; Meltser B. Ya.; Kop'ev P. S.; Alferov Zh. I.

Radiative recombination in type‐II GaSb/GaAs quantum dots

Näser A.; Dadgar A.; Kuttler M.; Heitz R.; Bimberg D.; Hyeon J. Y.; Schumann H.

Thermal stability of the midgap acceptor rhodium in indium phosphide

Cirlin G. E.; Guryanov G. M.; Golubok A. O.; Tipissev S. Ya.; Ledentsov N. N.; Kop'ev P. S.; Grundmann M.; Bimberg D.

Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

Böttcher E. H.; Bimberg D.

Millimeter wave distributed metal‐semiconductor‐metal photodetectors

Grundmann M.; Kop'ev P. S.; Zhukov A. E.; Egorov A. Yu.; Ustinov V. M.; Heydenreich J.; Gösele U.; Richter U.; Werner P.; Ruvimov S. S.; Bimberg D.; Böhrer J.; Ledentsov N. N.; Christen J.; Alferov Zh. I.

Ultranarrow Luminescence Lines from Single Quantum Dots

Ruvimov S.; Werner P.; Scheerschmidt K.; Gösele U.; Heydenreich J.; Richter U.; Ledentsov N. N.; Grundmann M.; Bimberg D.; Ustinov V. M.; Egorov A. Yu.; Kop'ev P. S.; Alferov Zh. I.

Structural characterization of (In,Ga)As quantum dots in a GaAs matrix

Scheffler H.; Baber N.; Dadgar A.; Bimberg D.; Winterfeld J.; Schumann H.

Deep levels in hafnium‐ and zirconium‐doped indium phosphide

Shchukin V. A.; Borovkov A. I.; Ledentsov N. N.; Bimberg D.

Tuning and breakdown of faceting under externally applied stress

Černe J.; Markelz A. G.; Sherwin M. S.; Allen S. J.; Sundaram M.; Gossard A. C.; van Son P. C.; Bimberg D.

Quenching of excitonic quantum‐well photoluminescence by intense far‐infrared radiation; Free‐carrier heating

Ambrée P.; Wandel K.; Böttcher E. H.; Bimberg D.

Plasma enhanced chemical vapor deposited SiO2 layers for passivation of InGaAs:Fe metal‐semiconductor‐metal photodetectors

Schell M.; Utz W.; Huhse D.; Kässner J.; Bimberg D.

Low jitter single‐mode pulse generation by a self‐seeded, gain‐switched Fabry–Pérot semiconductor laser

Grundmann M.; Stier O.; Bimberg D.

Symmetry breaking in pseudomorphic V‐groove quantum wires

Yu J.; Schell M.; Schulze M.; Bimberg D.

Generation of 290 fs pulses at 1.3 μm by hybrid mode‐locking of a semiconductor laser and optimization of the time‐bandwidth product

Krost A.; Esser N.; Selber H.; Christen J.; Richter W.; Bimberg D.; Su L. C.; Stringfellow G. B.

Identification of ordered and disordered Ga0.51In0.49P domains by spatially resolved luminescence and Raman spectroscopy

Bimberg D.; Böhrer J.; Krost A.

Large oscillator strength of spatially indirect electron–hole recombination at type II heterojunctions; The InAlAs/InP case

Srocka B.; Scheffler H.; Bimberg D.

Rhodium‐ and iridium‐related deep levels in In;0.53Ga0.47As

Srocka B.; Scheffler H.; Bimberg D.

Fe2+‐Fe;3+ level as a recombination center in In0.53Ga0.47As

Wolf T.; Zinke T.; Krost A.; Scheffler H.; Ullrich H.; Bimberg D.; Harde P.

Fe and Ti doping of InP grown by metalorganic chemical‐vapor deposition for the fabrication of thermally stable high‐resistivity layers

Böhrer J.; Krost A.; Bimberg D.

Carrier dynamics in staggered‐band lineup ;n‐InAlAs/;n‐InP heterostructures

Schell M.; Huhse D.; Bimberg D.

Picosecond pulse generation with a 1.55 μm tunable twin guide laser using blue‐chirp compression

Schade U.; Kollakowski St.; Böttcher E. H.; Bimberg D.

Improved performance of large‐area InP/InGaAs metal‐semiconductor‐metal photodetectors by sulfur passivation

Krost A.; Heinrichsdorff F.; Bimberg D.; Cerva H.

InP on Si(111): Accommodation of lattice mismatch and structural properties

Schnabel R. F.; Krost A.; Grundmann M.; Heinrichsdorff F.; Bimberg D.; Pilatzek M.; Harde P.

Epitaxy of high resistivity InP on Si

Böhrer J.; Krost A.; Bimberg D.; Helm M.; Bauer G.

Two‐dimensional electron and hole states at the staggered band line‐up interface of InAlAs/InP

Chang Ying-Lan; Tan I-Hsing; Zhang Yong-Hang; Bimberg D.; Merz James; Hu Evelyn

Reduced quantum efficiency of a near‐surface quantum well

Böhrer J.; Krost A.; Bimberg D. B.

Composition dependence of band gap and type of lineup in In1-;x-;yGaxAlyAs/InP heterostructures

Chen Z.; Bimberg D.

Influence of phase separation on electron mobility in high‐purity Ga;xIn1-;xAsyP1-;y (0≤;y≤1)

Böhrer J.; Krost A.; Bimberg D.

Spatially indirect intersubband transitions of localized electrons and holes at the staggered band lineup In0.52Al0.48As/InP interface

Su L. C.; Pu S. T.; Stringfellow G. B.; Christen J.; Selber H.; Bimberg D.

Control and characterization of ordering in GaInP

Zimmermann R.; Bimberg D.

Interface excitons in staggered‐line‐up quantum wells; The AlAs/GaAs case

Xie Fu Zeng; Kuhl D.; Böttcher E. H.; Ren S. Y.; Bimberg D.

Wide‐band frequency response measurements of photodetectors using low‐level photocurrent noise detection

Gruska B.; Ullrich H.; Bauer R. K.; Bimberg D.; Wandel K.

Cap and capless annealing of Fe‐implanted InGaAs

Böttcher E. H.; Hieronymi F.; Kuhl D.; Dröge E.; Bimberg D.

Transient response of lateral photodetectors

Böhrer J.; Krost A.; Wolf T.; Bimberg D.

Band offsets and transitivity of In1-;xGaxAs/In1-;yAlyAs/InP heterostructures

Bimberg D.; Heinrichsdorff F.; Bauer R. K.; Gerthsen D.; Stenkamp D.; Mars D. E.; Miller J. N.

Erratum: ‘‘Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces; A dramatic difference of perfection’’ [J. Vac. Sci. Technol. B ;10, 1793 (1992)]

Wolf T.; Drews D.; Scheffler H.; Bimberg D.; Mosel F.; Kipfer P.; Müller G.

Identification of deep levels in liquid‐encapsulation Czochralski‐grown Fe‐ and Zn‐doped InP; A proof of the nonexistence of a Fe;4+/Fe3+ donor level

Schnabel R. F.; Zimmermann R.; Bimberg D.; Nickel H.; Lösch R.; Schlapp W.

Influence of exciton localization on recombination line shapes: InxGa1-;xAs/GaAs quantum wells as a model

Ullrich H.; Knecht A.; Bimberg D.; Kräutle H.; Schlaak W.

Defect‐induced redistribution of Fe‐ or Ti‐implanted and annealed GaAs, InAs, GaP, and InP

Christen J.; Grundmann M.; Kapon E.; Colas E.; Hwang D. M.; Bimberg D.

Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates

Grundmann M.; Krost A.; Bimberg D.; Cerva H.

InGaAs/InP quantum wells on vicinal Si(001): Structural and optical properties

Bimberg D.; Mars D. E.; Stenkamp D.; Gerthsen D.; Bauer R. K.; Heinrichsdorff F.; Miller J. N.

Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection

Grundmann M.; Krost A.; Bimberg D.; Ehrmann O.; Cerva H.

Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of optical properties

Baber N.; Scheffler H.; Ullrich H.; Wolf T.; Bimberg D.

A simple technique for simultaneous fabrication of p+/n diodes and ohmic contacts on n‐type InP

Böhrer J.; Krost A.; Bimberg D.

InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition

Böttcher E. H.; Kirstaedter N.; Grundmann M.; Bimberg D.; Zimmermann R.; Harder C.; Meier H. P.

Nonspectroscopic approach to the determination of the chemical potential and band‐gap renormalization in quantum wells

Baber N.; Scheffler H.; Ostmann A.; Wolf T.; Bimberg D.

Field effect on electron emission from the deep Ti donor level in InP

Haacke S.; Zimmermann R.; Bimberg D.; Kal H.; Mars D. E.; Miller J. N.

Fermi enhancement and band‐gap renormalization of Al;xGa1-;xAs/GaAs modulation‐doped quantum wells

Krahl M.; Kirstaedter N.; Bauer R. K.; Bimberg D.; Meier H. P.; Harder C.

Correlation of time‐resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier widths

Morlock U.; Queisser H.-J.; Bauser E.; Bimberg D.; Christen J.; Ourmazd A.

Morphology of GaAs‐quantum‐well interfaces grown by liquid‐phase epitaxy

Ullrich H.; Knecht A.; Bimberg D.; Kräutle H.; Schlaak W.

Redistribution of Fe and Ti implanted into InP

Herman M. A.; Bimberg D.; Christen J.

Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

Christen J.; Grundmann M.; Bimberg D.

Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

Grundmann M.; Krost A.; Bimberg D.

Observation of the first‐order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si

Rechenberg I.; Stoeff S.; Krahl M.; Bimberg D.; Höpner A.

Defect‐free growth of Al;xGa1-;xAs by liquid‐phase epitaxy on V‐grooved (001) GaAs substrates

Grundmann M.; Christen J.; Bimberg D.; Hashimoto A.; Fukunaga T.; Watanabe N.

Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates

Bimberg D.; Grundmann M.; Christen J.

Characterization of stained heterostructures by cathodoluminescence

Wolf T.; Bimberg D.; Ulrici W.

Excitonic fine structure in the charge‐transfer spectra of GaP;Fe

Grundmann M.; Krost A.; Bimberg D.

Low‐temperature metalorganic chemical vapor deposition of InP on Si(001)

Grundmann M.; Lienert U.; Bimberg D.; Fischer-Colbrie A.; Miller J. N.

Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. ;55, 1765 (1989)]

Christen J.; Bimberg D.

Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final‐state interaction, statistical broadening, and momentum conservation

Scheffler H.; Korb W.; Bimberg D.; Ulrici W.

Deep Ti donor in GaAs

Tran Thoai D. B.; Zimmermann R.; Grundmann M.; Bimberg D.

Image charges in semiconductor quantum wells: Effect on exciton binding energy

Köhrbrück R.; Munnix S.; Bimberg D.; Mars D. E.; Miller J. N.

Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Köhrbrück R.; Munnix S.; Bimberg D.; Mars D. E.; Miller J. N.

Inequivalence of normal and inverted interfaces of molecular‐beam epitaxy grown AlGaAs/GaAs quantum wells

Grundmann M.; Lienert U.; Christen J.; Bimberg D.; Fischer-Colbrie A.; Miller J. N.

Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties

Grundmann M.; Bimberg D.; Fischer-Colbrie A.; Miller J. N.

Recombination dynamics in pseudomorphic and partially relaxed In0.23Ga0.77As/GaAs quantum wells

Krahl M.; Bimberg D.; Bauer R. K.; Mars D. E.; Miller J. N.

Enhancement of nonradiative interface recombination in GaAs coupled quantum wells

Grundmann M.; Lienert U.; Bimberg D.; Fischer-Colbrie A.; Miller J. N.

Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells

Grundmann M.; Christen J.; Bimberg D.; Fischer-Colbrie A.; Hull R.

Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons

Chen Z.; Korb W.; Bauer R. K.; Bimberg D.

First observation of a titanium midgap donor level in In0.53Ga0.47As p‐;n diodes

Oertel D.; Bimberg D.; Bauer R. K.; Carey K. W.

High‐precision band‐gap determination of Al;0.48In0.52As with optical and structural methods

Maierhofer Ch.; Munnix S.; Bimberg D.; Bauer R. K.; Mars D. E.; Miller J. N.

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

Munnix S.; Bauer R. K.; Bimberg D.; Harris J. S.; Köhrbrück R.; Larkins E. C.; Maierhofer Ch.; Mars D. E.; Miller J. N.

Growth kinetics, impurity incorporation, defect generation, and interface quality of molecular‐beam epitaxy grown AlGaAs/GaAs quantum wells; Role of group III and group V fluxes

Bimberg D.; Oertel D.; Hull R.; Reid G. A.; Carey K. W.

Detailed atomic scale structure of AlInAs/GaInAs quantum wells

Colvard C.; Bimberg D.; Alavi K.; Maierhofer C.; Nouri N.

Localization‐dependent thermalization of excitons in GaAs/Al;xGa1-;xAs quantum wells

Köhrbrück R.; Munnix S.; Bimberg D.; Larkins E. C.; Harris J. S.

Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Meier H. P.; Van Gieson E.; Walter W.; Harder C.; Krahl M.; Bimberg D.

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

Grundmann M.; Bimberg D.

Anisotropy effects on excitonic properties in realistic quantum wells

Ketterer K.; Böttcher E. H.; Bimberg D.

Picosecond spectra of gain‐switched AlGaAs/GaAs multiple quantum well lasers

Chen Z.; Wolf T.; Korb W.; Bimberg D.

Optical and electrical characterization of high‐resistivity liquid‐phase‐epitaxial In;0.53Ga0.47As @B: Fe

Munnix S.; Bimberg D.

Carrier injection in semiconductors with position‐dependent band structure; Electron‐beam‐induced current at heterojunctions

Böttcher E. H.; Ketterer K.; Bimberg D.

Turn‐on delay time fluctuations in gain‐switched AlGaAs/GaAs multiple‐quantum‐well lasers

Lefebvre P.; Gil B.; Lascaray J. P.; Mathieu H.; Bimberg D.; Fukunaga T.; Nakashima H.

Magnetoexcitons in a narrow single GaAs‐Ga;0.5Al0.5As quantum well grown by molecular‐beam epitaxy

Krahl M.; Christen J.; Bimberg D.; Weimann G.; Schlapp W.

Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

Munnix S.; Bimberg D.

Simulation of electron beam induced current at GaAs/AlGaAs heterojunctions under forward bias

Bimberg D.; Christen J.; Mars D. E.; Nakashima H.; Fukunaga T.; Miller J. N.

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

Ketterer K.; Böttcher E. H.; Bimberg D.

Picosecond optical sampling by semiconductor lasers

Juhl A.; Hoffmann A.; Bimberg D.; Schulz H. J.

Bound‐exciton‐related fine structure in charge transfer spectra of InP;Fe detected by calorimetric absorption spectroscopy

Böttcher E. H.; Ketterer K.; Bimberg D.; Weimann G.; Schlapp W.

Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature

Bimberg D.; Christen J.; Werner A.; Kunst M.; Weimann G.; Schlapp W.

Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature

Bimberg D.; Mars D.; Bauer R.; Miller J. N.; Oertel D.

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

Bimberg D.; Böttcher E. H.; Ketterer K.; Vollmer H. P.; Beneking H.; Roentgen P.

Generation and detection of 15‐ps light pulses in the 1.2–1.3‐μm wavelength range by semiconductor lasers and detectors

Bimberg D.; Münzel H.; Steckenborn A.; Christen J.

Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities

Bimberg D.; Mycielski J.

Recombination‐induced heating of free carriers in a semiconductor

Kütt W.; Bimberg D.; Maier M.; Kräutle H.; Köhl F.; Tomzig E.

Redistribution of Cr in GaAs:Cr and of V in GaAs:V after implantation of Si, Be, or B and annealing in a controlled atmosphere

Kütt W.; Bimberg D.; Maier M.; Kräutle H.; Köhl F.; Bauser E.

Heat treatment induced redistribution of vanadium in semi‐insulating GaAs;V

Christen J.; Bimberg D.; Steckenborn A.; Weimann G.

Localization induced electron‐hole transition rate enhancement in GaAs quantum wells