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Arakawa, Yasuhiko

Computed

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Research Profile

Latest Publications

1.
2012

Bak Wan; Noh Haneol; Stambaugh Corey; Arakawa Yasuhiko; Jhe Wonho

Spectral fluctuations of excitonic transitions of InGaAs single quantum dots
Appl. Phys. Lett. 100, 022105 (2012)
Center for Nano-Liquid and Department of Physics & Astronomy, Seoul National University, Seoul 151-742, Korea
2.
2011

Kang Woogun; Kitamura Masatoshi; Arakawa Yasuhiko

Novel Solution Process for High-Mobility C60 Fullerene Field-Effect Transistors
Appl. Phys. Express 4, 121602 (2011)
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, Meguro, Tokyo 153-8505, Japan
3.
2011

Kitamura Masatoshi; Arakawa Yasuhiko

High Frequency Operation (>10MHz) in Pentacene Thin‐Film Transistors
AIP Conf. Proc. 1399, 883 (2011)
Institute forNano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Komaba, Meguro‐ku, Tokyo 153‐8505, Japan

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All Publications

1.
2012

Bak Wan; Noh Haneol; Stambaugh Corey; Arakawa Yasuhiko; Jhe Wonho

Spectral fluctuations of excitonic transitions of InGaAs single quantum dots
Appl. Phys. Lett. 100, 022105 (2012)
Center for Nano-Liquid and Department of Physics & Astronomy, Seoul National University, Seoul 151-742, Korea
2.
2011

Kang Woogun; Kitamura Masatoshi; Arakawa Yasuhiko

Novel Solution Process for High-Mobility C60 Fullerene Field-Effect Transistors
Appl. Phys. Express 4, 121602 (2011)
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, Meguro, Tokyo 153-8505, Japan
3.
2011

Kitamura Masatoshi; Arakawa Yasuhiko

High Frequency Operation (>10MHz) in Pentacene Thin‐Film Transistors
AIP Conf. Proc. 1399, 883 (2011)
Institute forNano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Komaba, Meguro‐ku, Tokyo 153‐8505, Japan
4.
2011

Kodera Tetsuo; Yamahata Gento; Kambara Tomohiro; Horibe Kousuke; Ferrus Thierry; Williams David; Arakawa Yasuhiko; Oda Shunri

Realization of Lithographically‐Defined Silicon Quantum Dots without Unintentional Localized Potentials
AIP Conf. Proc. 1399, 331 (2011)
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2‐12‐1‐S9‐11, Ookayama, Meguro‐ku Tokyo, 152‐8552, Japan
5.
2011

Tandaechanurat A.; Ishida S.; Guimard D.; Bordel D.; Nomura M.; Iwamoto S.; Arakawa Y.

Lasing Characteristics of a Quantum‐Dot‐3D‐Photonic‐Crystal‐Nanocavity Coupled System: Interaction between Fully Confined Electrons and Photons
AIP Conf. Proc. 1399, 1007 (2011)
Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo, Japan
6.
2011

Ota Yasutomo; Iwamoto Satoshi; Kumagai Naoto; Arakawa Yasuhiko

Spontaneous Two-Photon Emission from a Single Quantum Dot
Phys. Rev. Lett. 107, 233602 (2011)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
7.
2011

Faure Stephane; Nishioka Masao; Ishida Satomi; Guimard Denis; Arakawa Yasuhiko

Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots Using In situ Patterning
Appl. Phys. Express 4, 112001 (2011)
Institute for Nano Quantum Information Electronics, University of Tokyo, Meguro, Tokyo 153-8505, Japan
8.
2011

Nakaoka T.; Tamura Y.; Saito T.; Miyazawa T.; Watanabe K.; Ota Y.; Iwamoto S.; Arakawa Y.

Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot
Appl. Phys. Lett. 99, 181109 (2011)
NanoQuine, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
9.
2011

Yang Xuelin; Arita Munetaka; Kako Satoshi; Arakawa Yasuhiko

Structural and optical properties of m-plane GaN/AlGaN quantum wires grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 99, 113106 (2011)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
10.
2011

Huang S. M.; Badrutdinov A. O.; Serra L.; Kodera T.; Nakaoka T.; Kumagai N.; Arakawa Y.; Tayurskii D. A.; Kono K.; Ono K.

Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots
Phys. Rev. B 84, 085325 (2011)
Low Temperature Physics Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan
11.
2011

Yang Xuelin; Arita Munetaka; Kako Satoshi; Arakawa Yasuhiko

Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers
Appl. Phys. Lett. 99, 061914 (2011)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
12.
2011

Kitamura Masatoshi; Kuzumoto Yasutaka; Aomori Shigeru; Arakawa Yasuhiko

High-Frequency Organic Complementary Ring Oscillator Operating up to 200 kHz
Appl. Phys. Express 4, 051601 (2011)
Institute for Nano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
13.
2011

Nozawa Tomohiro; Arakawa Yasuhiko

Detailed balance limit of the efficiency of multilevel intermediate band solar cells
Appl. Phys. Lett. 98, 171108 (2011)
Institute for Nano Quantum Information Electronics, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
14.
2011

Rajesh Mohan; Faure Stephane; Nishioka Masao; Augendre Emmanuel; Clavelier Laurent; Guimard Denis; Arakawa Yasuhiko

Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
Appl. Phys. Express 4, 045201 (2011)
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
15.
2011

Ohta Ryuichi; Ota Yasutomo; Nomura Masahiro; Kumagai Naoto; Ishida Satomi; Iwamoto Satoshi; Arakawa Yasuhiko

Strong coupling between a photonic crystal nanobeam cavity and a single quantum dot
Appl. Phys. Lett. 98, 173104 (2011)
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
16.
2011

Nakayama Shigeru; Ishida Satomi; Iwamoto Satoshi; Arakawa Yasuhiko

Effect of cavity mode volume on photoluminescence from silicon photonic crystal nanocavities
Appl. Phys. Lett. 98, 171102 (2011)
Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan
17.
2011

Konishi Kuniaki; Nomura Masahiro; Kumagai Naoto; Iwamoto Satoshi; Arakawa Yasuhiko; Kuwata-Gonokami Makoto

Circularly Polarized Light Emission from Semiconductor Planar Chiral Nanostructures
Phys. Rev. Lett. 106, 057402 (2011)
Photon Science Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
18.
2010

Nomura Masahiro; Ota Yasutomo; Kumagai Naoto; Iwamoto Satoshi; Arakawa Yasuhiko

Zero-cell photonic crystal nanocavity laser with quantum dot gain
Appl. Phys. Lett. 97, 191108 (2010)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
19.
2010

Takemoto Kazuya; Nambu Yoshihiro; Miyazawa Toshiyuki; Wakui Kentaro; Hirose Shinichi; Usuki Tatsuya; Takatsu Motomu; Yokoyama Naoki; Yoshino Ken'ichiro; Tomita Akihisa; Yorozu Shinichi; Sakuma Yoshiki; Arakawa Yasuhiko

Transmission Experiment of Quantum Keys over 50 km Using High-Performance Quantum-Dot Single-Photon Source at 1.5 μm Wavelength
Appl. Phys. Express 3, 092802 (2010)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904, Japan
20.
2010

Yu Young-Jun; Noh Haneol; Jhe Wonho; Noh Heung-Ryoul; Nakaoka Toshihiro; Arakawa Yasuhiko

Near-field optical observation of electric-field-induced fluorescence switching in laterally coupled quantum dots
Phys. Rev. B 82, 085308 (2010)
Center for Nano-liquid and Department of Physics & Astronomy, Seoul National University, Seoul 151-742, Korea
21.
2010

Kitamura Masatoshi; Kuzumoto Yasutaka; Kang Woogun; Aomori Shigeru; Arakawa Yasuhiko

High conductance bottom-contact pentacene thin-film transistors with gold-nickel adhesion layers
Appl. Phys. Lett. 97, 033306 (2010)
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
22.
2010

Miyazawa Toshiyuki; Kodera Tetsuo; Nakaoka Toshihiro; Watanabe Katsuyuki; Kumagai Naoto; Yokoyama Naoki; Arakawa Yasuhiko

Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
Appl. Phys. Express 3, 064401 (2010)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
23.
2010

Kindel C.; Kako S.; Kawano T.; Oishi H.; Arakawa Y.; Hönig G.; Winkelnkemper M.; Schliwa A.; Hoffmann A.; Bimberg D.

Exciton fine-structure splitting in GaN/AlN quantum dots
Phys. Rev. B 81, 241309 (2010)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904, Japan
24.
2010

Igarashi Y.; Shirane M.; Ota Y.; Nomura M.; Kumagai N.; Ohkouchi S.; Kirihara A.; Ishida S.; Iwamoto S.; Yorozu S.; Arakawa Y.

Spin dynamics of excited trion states in a single InAs quantum dot
Phys. Rev. B 81, 245304 (2010)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
25.
2010

Guimard Denis; Morihara Ryo; Bordel Damien; Tanabe Katsuaki; Wakayama Yuki; Nishioka Masao; Arakawa Yasuhiko

Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
Appl. Phys. Lett. 96, 203507 (2010)
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
26.
2010

Tanabe Katsuaki; Guimard Denis; Bordel Damien; Iwamoto Satoshi; Arakawa Yasuhiko

Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
Opt. Express 18, 10604 (2010)
27.
2010

Wakayama Y.; Iwamoto S.; Arakawa Y.

Switching operation of lasing wavelength in mid-infrared ridge-waveguide quantum cascade lasers coupled with microcylindrical cavity
Appl. Phys. Lett. 96, 171104 (2010)
Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan
28.
2010

Bordel Damien; Augendre Emmanuel; Clavelier Laurent; Guimard Denis; Rajesh Mohan; Nishioka Masao; Arakawa Yasuhiko

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band
Appl. Phys. Lett. 96, 043101 (2010)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
29.
2009

Na Jong H.; Kitamura M.; Arita M.; Arakawa Y.

Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors
Appl. Phys. Lett. 95, 253303 (2009)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504, Japan
30.
2009

Nomura Masahiro; Kumagai Naoto; Iwamoto Satoshi; Ota Yasutomo; Arakawa Yasuhiko

Photonic crystal nanocavity laser with a single quantum dot gain
Opt. Express 17, 15975 (2009)
31.
2009

Kitamura Masatoshi; Arakawa Yasuhiko

Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance
Appl. Phys. Lett. 95, 023503 (2009)
Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
32.
2009

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Ishida S.; Taniyama T.; Hirakawa K.; Arakawa Y.; Machida T.

Spin-Related Current Suppression in a Semiconductor Quantum Dot Spin-Diode Structure
Phys. Rev. Lett. 102, 236806 (2009)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
33.
2009

Na Jong H.; Kitamura M.; Arita M.; Arakawa Y.

Dual luminescence from organic/inorganic hybrid p-n junction light-emitting diodes
Appl. Phys. Lett. 94, 213302 (2009)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
34.
2009

Tanabe Katsuaki; Nomura Masahiro; Guimard Denis; Iwamoto Satoshi; Arakawa Yasuhiko

Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
Opt. Express 17, 7036 (2009)
35.
2009

Tandaechanurat A.; Ishida S.; Aoki K.; Guimard D.; Nomura M.; Iwamoto S.; Arakawa Y.

Demonstration of high-Q(>8600) three-dimensional photonic crystal nanocavity embedding quantum dots
Appl. Phys. Lett. 94, 171115 (2009)
Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
36.
2009

Kodera T.; Arakawa Y.; Tokura Y.; Kitamura Y.; Ono K.; Tarucha S.

Quantitative Estimation of Exchange Interaction Energy Using Two-Electron Vertical Double Quantum Dots
Phys. Rev. Lett. 102, 146802 (2009)
Institute for Nano Quantum Information Electronics, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
37.
2009

Guimard Denis; Ishida Mitsuru; Li Lin; Nishioka Masao; Tanaka Yu; Sudo Hisao; Yamamoto Tsuyoshi; Kondo Hayato; Sugawara Mitsuru; Arakawa Yasuhiko

Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics
Appl. Phys. Lett. 94, 103116 (2009)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan
38.
2009

Kitamura Masatoshi; Kuzumoto Yasutaka; Aomori Shigeru; Kamura Masakazu; Na Jong Ho; Arakawa Yasuhiko

Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes
Appl. Phys. Lett. 94, 083310 (2009)
Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
39.
2009

Nomura Masahiro; Iwamoto Satoshi; Tandaechanurat Aniwat; Ota Yasutomo; Kumagai Naoto; Arakawa Yasuhiko

Photonic band-edge micro lasers with quantum dot gain
Opt. Express 17, 640 (2009)
40.
2009

Ota Yasutomo; Shirane Masayuki; Nomura Masahiro; Kumagai Naoto; Ishida Satomi; Iwamoto Satoshi; Yorozu Shinichi; Arakawa Yasuhiko

Vacuum Rabi splitting with a single quantum dot embedded in a H1 photonic crystal nanocavity
Appl. Phys. Lett. 94, 033102 (2009)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
41.
2008

Matsui Makoto; Yokota Shigeru; Komurasaki Kimiya; Arakawa Yoshihiro

Evaluation of Unionized Propellant Xenon Atom in a Hall Thruster Plume
AIP Conf. Proc. 1084, 889 (2008)
Department of Aeronautics and Astronautics, University of Tokyo, 7‐3‐1 Hongo, Bunkyo, Tokyo 113–8656, Japan;
42.
2008

Wakayama Y.; Tandaechanurat A.; Iwamoto S.; Arakawa Y.

Design of high-Q photonic crystal microcavities with a graded square lattice for application to quantum cascade lasers
Opt. Express 16, 21321 (2008)
43.
2008

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Ishida S.; Taniyama T.; Hirakawa K.; Arakawa Y.; Machida T.

Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve
Appl. Phys. Lett. 93, 222107 (2008)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan
44.
2008

Na Jong H.; Kitamura M.; Arakawa Y.

Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors
Appl. Phys. Lett. 93, 213505 (2008)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
45.
2008

Ota Yasutomo; Nomura Masahiro; Kumagai Naoto; Watanabe Katsuyuki; Ishida Satomi; Iwamoto Satoshi; Arakawa Yasuhiko

Enhanced photon emission and absorption of single quantum dot in resonance with two modes in photonic crystal nanocavity
Appl. Phys. Lett. 93, 183114 (2008)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
46.
2008

Kawaguchi Kenichi; Yasuoka Nami; Ekawa Mitsuru; Ebe Hiroji; Akiyama Tomoyuki; Sugawara Mitsuru; Arakawa Yasuhiko

Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers
Appl. Phys. Lett. 93, 121908 (2008)
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
47.
2008

Takagi Hiroyuki; Nakaoka Toshihiro; Watanabe Katsuyuki; Kumagai Naoto; Arakawa Yasuhiko

Coherently driven semiconductor quantum dot at a telecommunication wavelength
Opt. Express 16, 13949 (2008)
48.
2008

Na Jong H.; Kitamura M.; Arakawa Y.

High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
Appl. Phys. Lett. 93, 063501 (2008)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Japan and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
49.
2008

Nomura Masahiro; Ota Yasutomo; Kumagai Naoto; Iwamoto Satoshi; Arakawa Yasuhiko

Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
Appl. Phys. Express 1, 072102 (2008)
Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153-8505, Japan
50.
2008

Kitamura Masatoshi; Aomori Shigeru; Na Jong Ho; Arakawa Yasuhiko

Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities
Appl. Phys. Lett. 93, 033313 (2008)
Institute for Nano Quantum Information Electronics (INQIE), University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
51.
2008

Miyazawa Toshiyuki; Nakaoka Toshihiro; Usuki Tatsuya; Tatebayashi Jun; Arakawa Yasuhiko; Hirose Shinichi; Takemoto Kazuya; Takatsu Motomu; Yokoyama Naoki

Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3 μ;m
J. Appl. Phys. 104, 013504 (2008)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan
52.
2008

Li Lin; Guimard Denis; Rajesh Mohan; Arakawa Yasuhiko

Growth of InAs/;Sb;GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3 μ;m band
Appl. Phys. Lett. 92, 263105 (2008)
Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
53.
2008

Saito Toshio; Ebe Hiroji; Arakawa Yasuhiko; Kakitsuka Takaaki; Sugawara Mitsuru

Optical polarization in columnar InAs/GaAs quantum dots: 8-band k∙;p calculations
Phys. Rev. B 77, 195318 (2008)
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
54.
2008

Shibata Teppei; Oda Yasuhisa; Komurasaki Kimiya; Arakawa Yoshihiro

A Numerical Simulation of the Energy Conversion Process in Microwave Rocket
AIP Conf. Proc. 997, 460 (2008)
Department of Advanced Energy, The University of Tokyo, 5‐1‐5 Kashiwanoha, Kashiwa, Chiba, 277‐8561, Japan;
55.
2008

Fukui Akihiro; Hatai Keigo; Cho Shinatora; Komurasaki Kimiya; Arakawa Yoshihiro

Supporting Structure of the LSD Wave in an Energy Absorption Perspective
AIP Conf. Proc. 997, 403 (2008)
Department of Aeronautics and Astronautics, School of Engineering, The University of Tokyo, Japan
56.
2008

Guimard Denis; Lee Hearin; Nishioka Masao; Arakawa Yasuhiko

Growth of high-uniformity InAs/;GaAs quantum dots with ultralow density below 10⁷ ;cm^-2; and emission above 1.3 μ;m
Appl. Phys. Lett. 92, 163101 (2008)
Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan
57.
2008

Miyazawa Toshiyuki; Nakaoka Toshihiro; Usuki Tatsuya; Arakawa Yasuhiko; Takemoto Kazuya; Hirose Shinnichi; Okumura Shigekazu; Takatsu Motomu; Yokoyama Naoki

Exciton dynamics in current-injected single quantum dot at 1.55 μ;m
Appl. Phys. Lett. 92, 161104 (2008)
Institute for Nano Quantum Information Electronics, and Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
58.
2008

Yasuoka Nami; Kawaguchi Kenichi; Ebe Hiroji; Akiyama Tomoyuki; Ekawa Mitsuru; Tanaka Shinsuke; Morito Ken; Uetake Ayahito; Sugawara Mitsuru; Arakawa Yasuhiko

Demonstration of transverse-magnetic dominant gain in quantum dot semiconductor optical amplifiers
Appl. Phys. Lett. 92, 101108 (2008)
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
59.
2008

Na Jong Ho; Kitamura Masatoshi; Arakawa Yasuhiko

Complementary Two-input NAND Gates with Low-voltage-operating Organic Transistors on Plastic Substrates
Appl. Phys. Express 1, 021803 (2008)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
60.
2008

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Ishida S.; Taniyama T.; Hirakawa K.; Arakawa Y.; Machida T.

Oscillatory changes in the tunneling magnetoresistance effect in semiconductor quantum-dot spin valves
Phys. Rev. B 77, 081302 (2008)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
61.
2008

Tandaechanurat A.; Iwamoto S.; Nomura M.; Kumagai N.; Arakawa Y.

Increase of Q-factor in photonic crystal H1-defect nanocavities after closing of photonic bandgap with optimal slab thickness
Opt. Express 16, 448 (2008)
62.
2008

Kakuma Hideo; Ohbayashi Kohji; Arakawa Yasuhiko

Optical imaging of hard and soft dental tissues using discretely swept optical frequency domain reflectometry optical coherence tomography at wavelengths from 1560 to 1600 ;nm
J. Biomed. Opt. 13, 014012 (2008)
University of Tokyo, Research Center for Advanced Science and Technology, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8904, Japan
63.
2007

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Hirakawa K.; Machida T.; Taniyama T.; Ishida S.; Arakawa Y.

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes
Appl. Phys. Lett. 91, 232105 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
64.
2007

Iwamoto Satoshi; Arakawa Yasuhiko; Gomyo Akiko

Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature
Appl. Phys. Lett. 91, 211104 (2007)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8094, Japan
65.
2007

Na Jong H.; Kitamura M.; Arakawa Y.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate
Appl. Phys. Lett. 91, 193501 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
66.
2007

Nagao N.; Yokota S.; Komurasaki K.; Arakawa Y.

Development of a two-dimensional dual pendulum thrust stand for Hall thrusters
Rev. Sci. Instrum. 78, 115108 (2007)
Department of Aeronautics and Astronautics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
67.
2007

Kitamura Masatoshi; Kuzumoto Yasutaka; Kamura Masakazu; Aomori Shigeru; Arakawa Yasuhiko

High-performance fullerene C60 thin-film transistors operating at low voltages
Appl. Phys. Lett. 91, 183514 (2007)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
68.
2007

Nagahara Seiji; Shimoda Masahiko; Tsukamoto Shiro; Arakawa Yasuhiko

Enhancement of Room Temperature Photoluminescence from InAs Quantum Dots by Irradiating Mn
Jpn. J. Appl. Phys., Part 2 46, L801 (2007)
Nanoelectronics Collaborative Research Center, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
69.
2007

Kitamura Masatoshi; Arakawa Yasuhiko

Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates
Appl. Phys. Lett. 91, 053505 (2007)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
70.
2007

Arita M.; Ishida S.; Kako S.; Iwamoto S.; Arakawa Y.

AlN air-bridge photonic crystal nanocavities demonstrating high quality factor
Appl. Phys. Lett. 91, 051106 (2007)
Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
71.
2007

Yu Young-Jun; Noh Haneol; Jeon Gun Sang; Noh Heung-Ryoul; Arakawa Yasuhiko; Jhe Wonho

Near-field optical study of highly dense laterally coupled InAs single quantum dots
Appl. Phys. Lett. 91, 041117 (2007)
Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
72.
2007

Nakaoka T.; Tarucha S.; Arakawa Y.

Electrical tuning of the g factor of single self-assembled quantum dots
Phys. Rev. B 76, 041301 (2007)
Institute of Industrical Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
73.
2007

Hamaya K.; Kitabatake M.; Shibata K.; Jung M.; Kawamura M.; Hirakawa K.; Machida T.; Taniyama T.; Ishida S.; Arakawa Y.

Electric-field control of tunneling magnetoresistance effect in a Ni/;InAs/;Ni quantum-dot spin valve
Appl. Phys. Lett. 91, 022107 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
74.
2007

Guimard D.; Arakawa Y.; Ishida M.; Tsukamoto S.; Nishioka M.; Nakata Y.; Sudo H.; Yamamoto T.; Sugawara M.

Ground state lasing at 1.34 μ;m from InAs/;GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition
Appl. Phys. Lett. 90, 241110 (2007)
CINQIE and Laboratory for Integrated Micro Mechatronic Systems (CNRS UMI 2820)–Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
75.
2007

Nomura Masahiro; Iwamoto Satoshi; Kumagai Naoto; Arakawa Yasuhiko

Temporal coherence of a photonic crystal nanocavity laser with high spontaneous emission coupling factor
Phys. Rev. B 75, 195313 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
76.
2007

Na Jong H.; Kitamura M.; Lee D.; Arakawa Y.

High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics
Appl. Phys. Lett. 90, 163514 (2007)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
77.
2007

Nakaoka T.; Kako S.; Arakawa Y.; Tarucha S.

Coulomb blockade in a self-assembled GaN quantum dot
Appl. Phys. Lett. 90, 162109 (2007)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
78.
2007

Takemoto Kazuya; Takatsu Motomu; Hirose Shinichi; Yokoyama Naoki; Sakuma Yoshiki; Usuki Tatsuya; Miyazawa Toshiyuki; Arakawa Yasuhiko

An optical horn structure for single-photon source using quantum dots at telecommunication wavelength
J. Appl. Phys. 101, 081720 (2007)
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-0197 Atsugi, Japan
79.
2007

Nomura M.; Iwamoto S.; Yang T.; Ishida S.; Arakawa Y.

Selective Excitation of a Single Quantum Dot in a Photonic Crystal Nanocavity by using Cavity Resonance
AIP Conf. Proc. 893, 1129 (2007)
Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, Tokyo 153‐8505, Japan;
80.
2007

Tsukamoto S.; Bell G. R.; Ishii A.; Arakawa Y.

InAs wetting layer and quantum dots on GaAs(001) surface studied by ;in situ STM placed inside MBE growth chamber and kMC simulations based on first‐principles calculations
AIP Conf. Proc. 893, 101 (2007)
Nanoelectronics Collaborative Research Center, University of Tokyo, Tokyo 153‐8505, Japan;
81.
2007

Yang Tao; Tatebayashi Jun; Aoki Kanna; Nishioka Masao; Arakawa Yasuhiko

Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/;GaAs quantum dots emitting at 1.3 μ;m
Appl. Phys. Lett. 90, 111912 (2007)
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China;
82.
2007

Koizumi Hiroyuki; Noji Ryosuke; Komurasaki Kimiya; Arakawa Yoshihiro

Plasma acceleration processes in an ablative pulsed plasma thruster
Phys. Plasmas 14, 033506 (2007)
Department of Aeronautics and Astronautics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
83.
2007

Hamaya K.; Masubuchi S.; Kawamura M.; Machida T.; Jung M.; Shibata K.; Hirakawa K.; Taniyama T.; Ishida S.; Arakawa Y.

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
Appl. Phys. Lett. 90, 053108 (2007)
Department of Fundamental Engineering, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
84.
2007

Ishida Mitsuru; Sugawara Mitsuru; Yamamoto Tsuyoshi; Hatori Nobuaki; Ebe Hiroji; Nakata Yoshiaki; Arakawa Yasuhiko

Theoretical study on high-speed modulation of Fabry-Pérot and distributed-feedback quantum-dot lasers; ;K-factor-limited bandwidth and 10 ;Gbit/;s eye diagrams
J. Appl. Phys. 101, 013108 (2007)
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan and Nanoelectronics Collaborative Research Center (NCRC), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
85.
2006

Kawaguchi Kenichi; Sugawara Mitsuru; Akiyama Tomoyuki; Ebe Hiroji; Ekawa Mitsuru; Yasuoka Nami; Arakawa Yasuhiko

Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
Jpn. J. Appl. Phys., Part 2 45, L1244 (2006)
Fujitsu Limited and Fujitsu Laboratories, Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
86.
2006

Nomura Masahiro; Iwamoto Satoshi; Yang Tao; Ishida Satomi; Arakawa Yasuhiko

Enhancement of light emission from single quantum dot in photonic crystal nanocavity by using cavity resonant excitation
Appl. Phys. Lett. 89, 241124 (2006)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
87.
2006

Kitamura M.; Arakawa Y.

High-performance pentacene thin-film transistors with high dielectric constant gate insulators
Appl. Phys. Lett. 89, 223525 (2006)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
88.
2006

Guimard Denis; Nishioka Masao; Tsukamoto Shiro; Arakawa Yasuhiko

High density InAs/;GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition
Appl. Phys. Lett. 89, 183124 (2006)
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan and Laboratory for Integrated Micro Mechatronic Systems (CNRS UMI 2820), Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan
89.
2006

Nomura Masahiro; Iwamoto Satoshi; Nishioka Masao; Ishida Satomi; Arakawa Yasuhiko

Highly efficient optical pumping of photonic crystal nanocavity lasers using cavity resonant excitation
Appl. Phys. Lett. 89, 161111 (2006)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
90.
2006

Nakaoka T.; Clark E. C.; Krenner H. J.; Sabathil M.; Bichler M.; Arakawa Y.; Abstreiter G.; Finley J. J.

Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
Phys. Rev. B 74, 121305 (2006)
Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany;
91.
2006

Matsui Makoto; Komurasaki Kimiya; Ogawa Satoshi; Arakawa Yoshihiro

Influence of laser intensity on absorption line broadening in laser absorption spectroscopy
J. Appl. Phys. 100, 063102 (2006)
Department of Advanced Energy, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, 277-8583 Chiba, Japan
92.
2006

Guimard Denis; Tsukamoto Shiro; Nishioka Masao; Arakawa Yasuhiko

1.55 μ;m emission from InAs/;GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
Appl. Phys. Lett. 89, 083116 (2006)
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and Laboratory for Integrated Micro Mechatronic Systems (CNRS UMI 2820), Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
93.
2006

Yang Tao; Tatebayashi Jun; Nishioka Masao; Arakawa Yasuhiko

Improved surface morphology of stacked 1.3 μ;mInAs/;GaAs quantum dot active regions by introducing annealing processes
Appl. Phys. Lett. 89, 081902 (2006)
Nano-Optoelectronics Lab, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
94.
2006

Nomura Masahiro; Iwamoto Satoshi; Watanabe Katsuyuki; Kumagai Naoto; Nakata Yoshiaki; Ishida Satomi; Arakawa Yasuhiko

Room temperature continuous-wave lasing in photonic crystal nanocavity
Opt. Express 14, 6308 (2006)
95.
2006

Wang M. J.; Shen B.; Wang Y.; Huang S.; Yang Z. J.; Xu K.; Zhang G. Y.; Hoshino K.; Arakawa Y.

Observation of inversion behaviors induced by polarization effects in GaN/;AlxGa1-x;N/;GaN based metal-insulator-semiconductor structures
Appl. Phys. Lett. 88, 242104 (2006)
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
96.
2006

Kita T.; Tamura N.; Wada O.; Sugawara M.; Nakata Y.; Ebe H.; Arakawa Y.

Artificial control of optical gain polarization by stacking quantum dot layers
Appl. Phys. Lett. 88, 211106 (2006)
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1Rokkodai, Nada, Kobe 657-8501, Japan
97.
2006

Hosomi K.; Kikawa T.; Goto S.; Yamada H.; Katsuyama T.; Arakawa Y.

Ultrahigh-aspect-ratio SiO2 deeply etched periodic structures with smooth surfaces for photonics applications
J. Vac. Sci. Technol. B 24, 1226 (2006)
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Optoelectronic Industry and Technology Development Association, Sumitomo Edogawabashiekimae Building, Sekiguchi 1-Chome, Bunkyo-ku, Tokyo 112-0014, Japan; and Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan
98.
2006

Nomura Masahiro; Iwamoto Satoshi; Nakaoka Toshihiro; Ishida Satomi; Arakawa Yasuhiko

Localized excitation of InGaAs quantum dots by utilizing a photonic crystal nanocavity
Appl. Phys. Lett. 88, 141108 (2006)
Institute of Industrial Science, and Research Center for Advanced Science and Technology, and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
99.
2006

Mori Koichi; Komurasaki Kimiya; Arakawa Yoshihiro

Threshold laser power density for regime transition of a laser absorption wave in a reduced-density air atmosphere
Appl. Phys. Lett. 88, 121502 (2006)
Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, Japan
100.
2006

Nakaoka T.; Kako S.; Arakawa Y.

Unconventional quantum-confined Stark effect in a single GaN quantum dot
Phys. Rev. B 73, 121305 (2006)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
101.
2006

Hamaya K.; Shiraki Y.; Sawano K.; Arakawa Y.; Ishida S.; Hirakawa K.; Masubuchi S.; Machida T.

Spin-dependent edge-channel transport in a Si/;SiGe quantum Hall system
Phys. Rev. B 73, 121304 (2006)
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
102.
2006

Nagahara Seiji; Arita Munetaka; Arakawa Yasuhiko

No temperature dependence of spin relaxation in InGaN phase-separated quantum dots
Appl. Phys. Lett. 88, 083101 (2006)
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
103.
2006

Takamiya Ikuko; Tsukamoto Shiro; Nishida Atsushi; Arisawa Mitsuhiro; Shimoda Masahiko; Arakawa Yasuhiko

Highly Reactive Organopalladium Catalyst Formed on Sulfur-Terminated GaAs(001)-($2 \times 6$) Surface
Jpn. J. Appl. Phys., Part 2 45, L475 (2006)
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan ;
104.
2006

Iwamoto Satoshi; Ishida Satomi; Arakawa Yasuhiko; Tokushima Masatoshi; Gomyo Akiko; Yamada Hirohito; Higo Akio; Toshiyoshi Hiroshi; Fujita Hiroyuki

Observation of micromechanically controlled tuning of photonic crystal line-defect waveguide
Appl. Phys. Lett. 88, 011104 (2006)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8094, Japan
105.
2005

Jung M.; Machida T.; Hirakawa K.; Komiyama S.; Nakaoka T.; Ishida S.; Arakawa Y.

Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures
Appl. Phys. Lett. 87, 203109 (2005)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
106.
2005

Kitamura M.; Iwamoto S.; Arakawa Y.

Enhanced light emission from an organic photonic crystal with a nanocavity
Appl. Phys. Lett. 87, 151119 (2005)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
107.
2005

Xu M. S.; Tsukamoto S.; Ishida S.; Kitamura M.; Arakawa Y.; Endres R. G.; Shimoda M.

Conductance of single thiolated poly(GC)-poly(GC) DNA molecules
Appl. Phys. Lett. 87, 083902 (2005)
Nanoelectronics Collaborative Research Center, RCAST & IIS, The University of Tokyo, Japan;
108.
2005

Yamamoto Naoji; Yokota Shigeru; Matsui Makoto; Komurasaki Kimiya; Arakawa Yoshihiro

Measurement of erosion rate by absorption spectroscopy in a Hall thruster
Rev. Sci. Instrum. 76, 083111 (2005)
Department of Advanced Energy Engineering Science, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan
109.
2005

Santori Charles; Götzinger Stephan; Yamamoto Yoshihisa; Kako Satoshi; Hoshino Katsuyuki; Arakawa Yasuhiko

Photon correlation studies of single GaN quantum dots
Appl. Phys. Lett. 87, 051916 (2005)
E.L. Ginzton Laboratory, Stanford University, Stanford, California 94305
110.
2005

Englund Dirk; Fattal David; Waks Edo; Solomon Glenn; Zhang Bingyang; Nakaoka Toshihiro; Arakawa Yasuhiko; Yamamoto Yoshihisa; Vučković Jelena

Controlling the Spontaneous Emission Rate of Single Quantum Dots in a Two-Dimensional Photonic Crystal
Phys. Rev. Lett. 95, 013904 (2005)
Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
111.
2005

Takemoto Kazuya; Sakuma Yoshiki; Hirose Shinichi; Usuki Tatsuya; Yokoyama Naoki; Miyazawa Toshiyuki; Takatsu Motomu; Arakawa Yasuhiko

Ultranarrow Photoluminescence Line In 1.3–1.55 μm Of Single InAs/InP Quantum Dots
AIP Conf. Proc. 772, 743 (2005)
Fujitsu Laboratories, Ltd., 10‐1 Morinosato‐Wakamiya, 243‐0197 Atsugi, Japan;
112.
2005

Nakaoka T.; Saito T.; Song H.-Z.; Usuki T.; Arakawa Y.

Characterization of g‐Factors in Various In(Ga)As Quantum Dots
AIP Conf. Proc. 772, 741 (2005)
Research Center for Advanced Science and Technology, University of Tokyo
113.
2005

Williams D. P.; Andreev A. D.; O'Reilly E. P.; Rice J. H.; Robinson J. W.; Jarjour A.; Smith J. D.; Taylor R. A.; Briggs G. A. D.; Arakawa Y.; Yasin S.

Theoretical And Experimental Investigation Of Biexcitons And Charged Excitons In InGaN Single Quantum Dots
AIP Conf. Proc. 772, 695 (2005)
NMRC, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland
114.
2005

Fukuda Tatsuya; Tatebayashi Jun; Nishioka Masao; Arakawa Yasuhiko

A very narrow photoluminescence broadening (< 16 meV) from ∼ 1.5 μm self‐assembled quantum dots at room temperature
AIP Conf. Proc. 772, 655 (2005)
Research Center for Advanced Science and Technology, University of Tokyo, Komaba 4‐6‐1, Meguro‐ku, Tokyo, Japan;
115.
2005

Jung M.; Hirakawa K.; Ishida S.; Arakawa Y.; Kawaguchi Y.; Komiyama S.

Shell Structures in Self‐Assembled InAs Quantum Dots Observed by Lateral Single Electron Tunneling Structures
AIP Conf. Proc. 772, 635 (2005)
IIS, University of Tokyo,4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
116.
2005

Kako Satoshi; Hoshino Katsuyuki; Iwamoto Satoshi; Ishida Satomi; Arakawa Yasuhiko

Single dot spectroscopy of GaN/AlN self‐assembled quantum dots
AIP Conf. Proc. 772, 627 (2005)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
117.
2005

Matsusue T.; Kanbara D.; Mino H.; Arita M.; Arakawa Y.

Transient Faraday Rotation and Circular Dichroism Induced by Circularly‐Polarized Light in InGaN
AIP Conf. Proc. 772, 1401 (2005)
Deptartment of Materials Technology, Chiba University, 1‐33 Yayoi‐cho, Inage‐ku, Chiba 263‐8522, Japan;
118.
2005

Nagahara Seiji; Arita Munetaka; Arakawa Yasuhiko

Long-lived electron spins in InxGa1-x;N multiquantum well
Appl. Phys. Lett. 86, 242103 (2005)
Nanoelectronics Collaborative Research Center, and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
119.
2005

Nakaoka T.; Saito T.; Tatebayashi J.; Hirose S.; Usuki T.; Yokoyama N.; Arakawa Y.

Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering
Phys. Rev. B 71, 205301 (2005)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
120.
2005

Toda Y.; Hoshino K.; Abe Y.; Adachi S.; Arakawa Y.

Optical diffraction spectroscopy of excitons in uniaxially strained GaN films
Phys. Rev. B 71, 195315 (2005)
Department of Applied Physics, Hokkaido University, Kita 13 Nishi 8 Kita-ku, Sapporo 060-8628, Japan
121.
2005

Yamada Hirohito; Chu Tao; Ishida Satomi; Arakawa Yasuhiko

Optical add-drop multiplexers based on Si-wire waveguides
Appl. Phys. Lett. 86, 191107 (2005)
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan and Optoelectronic Industry and Technology Development Association (OITDA), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
122.
2005

Uehara Susumu; Inoue Takayoshi; Komurasaki Kimiya; Arakawa Yoshihiro

An Experimental Study on Energy Conversion Process of an in‐Space CW Laser Thruster
AIP Conf. Proc. 766, 254 (2005)
Department of Aeronautics and Astronautics, University of Tokyo, 7‐3‐1, Hongo, Bunkyo‐ku, Tokyo 113‐8656, Japan;
123.
2005

Katsurayama H.; Ushio M.; Komurasaki K.; Arakawa Y.

Analytical Study on Flight Performance of a RP Laser Launcher
AIP Conf. Proc. 766, 117 (2005)
Department of Aeronautics and Astronautcs, The University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo, 113‐8656, Japan;
124.
2005

Ide Toshihide; Baba Toshihiko; Tatebayashi Jun; Iwamoto Satoshi; Nakaoka Toshihiro; Arakawa Yasuhiko

Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding
Opt. Express 13, 1615 (2005)
125.
2005

Sugawara M.; Hatori N.; Ebe H.; Ishida M.; Arakawa Y.; Akiyama T.; Otsubo K.; Nakata Y.

Modeling room-temperature lasing spectra of 1.3-μm self-assembled ;InAs/;GaAs quantum-dot lasers; Homogeneous broadening of optical gain under current injection
J. Appl. Phys. 97, 043523 (2005)
Institute of Industrial Science, Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 127-8172, Japan
126.
2005

Tatebayashi Jun; Hatori Nobuaki; Ishida Mitsuru; Ebe Hiroji; Sugawara Mitsuru; Arakawa Yasuhiko; Sudo Hisao; Kuramata Akito

1.28 μ;m lasing from stacked InAs/;GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition
Appl. Phys. Lett. 86, 053107 (2005)
Institute of Industrial Science & Nanoelectronics Collaborative Research Center, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan;
127.
2005

Jung M.; Hirakawa K.; Kawaguchi Y.; Komiyama S.; Ishida S.; Arakawa Y.

Lateral electron transport through single self-assembled InAs quantum dots
Appl. Phys. Lett. 86, 033106 (2005)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
128.
2005

Ebe Hiroji; Uetake Ayahito; Akiyama Tomoyuki; Kawaguchi Kenichi; Ekawa Mitsuru; Kuramata Akito; Nakata Yoshiaki; Sugawara Mitsuru; Arakawa Yasuhiko

Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 $\mu$m bands
Jpn. J. Appl. Phys., Part 1 44, 6312 (2005)
129.
2005

Jayavel Pachamuthu; Kita Takashi; Nakata Yoshiaki; Arakawa Yasuhiko; Sugawara Mitsuru; Ebe Hiroji; Wada Osamu; Akiyama Tomoyuki

Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
Jpn. J. Appl. Phys., Part 1 44, 2528 (2005)
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
130.
2005

Kita T.; Mori T.; Seki H.; Matsushita M.; Kikuno M.; Wada O.; Ebe H.; Sugawara M.; Arakawa Y.; Nakata Y.

Extended wavelength emission to 1.3 μ;m in nitrided InAs/;GaAs self-assembled quantum dots
J. Appl. Phys. 97, 024306 (2005)
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
131.
2005

Fukamachi Toshihiko; Hosomi Kazuhiko; Sugawara Toshiki; Kikuchi Nobuhiko; Katsuyama Toshio; Arakawa Yasuhiko

Dispersion Compensation in 40 Gb/s Non-Return-to-Zero Optical Transmission System Using Coupled-Cavity Photonic Crystals
Jpn. J. Appl. Phys., Part 2 44, L1282 (2005)
132.
2005

Miyazawa Toshiyuki; Takemoto Kazuya; Sakuma Yoshiki; Hirose Shinichi; Usuki Tatsuya; Yokoyama Naoki; Takatsu Motomu; Arakawa Yasuhiko

Single-Photon Generation in the 1.55-$\mu$m Optical-Fiber Band from an InAs/InP Quantum Dot
Jpn. J. Appl. Phys., Part 2 44, L620 (2005)
133.
2005

Kudo Makoto; Nakaoka Toshihiro; Iwamoto Satoshi; Arakawa Yasuhiko

InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Part 2 44, L45 (2005)
134.
2004

Nakaoka T.; Saito T.; Tatebayashi J.; Arakawa Y.

Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots
Phys. Rev. B 70, 235337 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, Tokyo 153-8904, Japan
135.
2004

Kawaguchi Kenichi; Ekawa Mitsuru; Kuramata Akito; Akiyama Tomoyuki; Ebe Hiroji; Sugawara Mitsuru; Arakawa Yasuhiko

Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications
Appl. Phys. Lett. 85, 4331 (2004)
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0197, Japan and Optoelectronic Industry and Technology Development Association (OITDA), 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan
136.
2004

Ishida Mitsuru; Hatori Nobuaki; Akiyama Tomoyuki; Otsubo Koji; Nakata Yoshiaki; Ebe Hiroji; Sugawara Mitsuru; Arakawa Yasuhiko

Photon lifetime dependence of modulation efficiency and K factor in 1.3 μ;m self-assembled InAs/;GaAs quantum-dot lasers; Impact of capture time and maximum modal gain on modulation bandwidth
Appl. Phys. Lett. 85, 4145 (2004)
Nanoelectronics Collaborative Research Center, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
137.
2004

Lu J.; Shen B.; Tang N.; Chen D. J.; Zhao H.; Liu D. W.; Zhang R.; Shi Y.; Zheng Y. D.; Qiu Z. J.; Gui Y. S.; Zhu B.; Yao W.; Chu J. H.; Hoshino K.; Arakawa Y.

Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-x;N/;GaN heterostructures with two subbands occupation
Appl. Phys. Lett. 85, 3125 (2004)
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and National Laboratory of Solid State Microstructures and Department of Physics. Nanjing University, Nanjing 210093, People's Republic of China
138.
2004

Yang Tao; Tsukamoto Shiro; Tatebayashi Jun; Nishioka Masao; Arakawa Yasuhiko

Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/;GaAs by low-pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 85, 2753 (2004)
Nanoelectronics Collaborative Research Center (NCRC), Institute of Industrial Science and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
139.
2004

Koizumi H.; Komurasaki K.; Arakawa Y.

Development of thrust stand for low impulse measurement from microthrusters
Rev. Sci. Instrum. 75, 3185 (2004)
Department of Aeronautics and Astronautics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
140.
2004

Ide Toshihide; Baba Toshihiko; Tatebayashi Jun; Iwamoto Satoshi; Nakaoka Toshihiro; Arakawa Yasuhiko

Lasing characteristics of InAs quantum-dot microdisk from 3 ;K to room temperature
Appl. Phys. Lett. 85, 1326 (2004)
Yokohama National University, Department of Electrical and Computer Engineering, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
141.
2004

Hoshino K.; Kako S.; Arakawa Y.

Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 85, 1262 (2004)
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, and Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan
142.
2004

Tatebayashi Jun; Arakawa Yasuhiko; Hatori Nobuaki; Ebe Hiroji; Sugawara Mitsuru; Sudo Hisao; Kuramata Akito

InAs/;GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots
Appl. Phys. Lett. 85, 1024 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan
143.
2004

Kako S.; Hoshino K.; Iwamoto S.; Ishida S.; Arakawa Y.

Exciton and biexciton luminescence from single hexagonal GaN/;AlN self-assembled quantum dots
Appl. Phys. Lett. 85, 64 (2004)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
144.
2004

Nakaoka T.; Tatebayashi J.; Arakawa Y.; Saito T.

Carrier relaxation in closely stacked InAs quantum dots
J. Appl. Phys. 96, 150 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
145.
2004

Sugawara M.; Otsubo K.; Akiyama T.; Arakawa Y.; Ishida M.; Hatori N.; Ebe H.; Nakata Y.

Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers
Phys. Rev. B 69, 235332 (2004)
Institute of Industrial Science and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 127-8172, Japan;
146.
2004

Park Se-Ki; Tatebayashi Jun; Arakawa Yasuhiko

Effects of InGaAs Insertion Layer on the Properties of High‐Density InAs/AlAs Quantum Dots
Jpn. J. Appl. Phys., Part 1 43, 3828 (2004)
Research Center for Advanced Science and Technology, Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8904, Japan;
147.
2004

Mori Koichi; Komurasaki Kimiya; Arakawa Yoshihiro

Energy transfer from a laser pulse to a blast wave in reduced-pressure air atmospheres
J. Appl. Phys. 95, 5979 (2004)
Department of Advanced Energy, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, Japan
148.
2004

Tokushima Masatoshi; Yamada Hirohito; Arakawa Yasuhiko

1.5-μ;m-wavelength light guiding in waveguides in square-lattice-of-rod photonic crystal slab
Appl. Phys. Lett. 84, 4298 (2004)
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan;
149.
2004

Yang Tao; Tatebayashi Jun; Tsukamoto Shiro; Nishioka Masao; Arakawa Yasuhiko

Narrow photoluminescence linewidth (<17 ;meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 84, 2817 (2004)
Nanoelectronics Collaborative Research Center (NCRC), Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
150.
2004

Kitamura Masatoshi; Imada Tadahiro; Kako Satoshi; Arakawa Yasuhiko

Time‐of‐Flight Measurement of Lateral Carrier Mobility in Organic Thin Films
Jpn. J. Appl. Phys., Part 1 43, 2326 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8504, Japan;
151.
2004

Park Se-Ki; Tatebayashi Jun; Nakaoka Toshihiro; Sato Tomohiko; Park Young Ju; Arakawa Yasuhiko

Enhanced Optical Properties of High‐Density (>10;11/cm2) InAs/AlAs Quantum Dots by Hydrogen Passivation
Jpn. J. Appl. Phys., Part 1 43, 2118 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8904, Japan;
152.
2004

Nakaoka Toshihiro; Kakitsuka Takaaki; Saito Toshio; Arakawa Yasuhiko

Transition Energy Control via Strain in Single Quantum Dots Embedded in Micromachined Air‐Bridge
Jpn. J. Appl. Phys., Part 1 43, 2069 (2004)
RCAST, IIS, and CCR, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
153.
2004

Ito Masamichi; Iwamoto Satoshi; Arakawa Yasuhiko

Enhancement of Cavity‐;Q in a Quasi‐Three‐Dimensional Photonic Crystal
Jpn. J. Appl. Phys., Part 1 43, 1990 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8904, Japan;
154.
2004

Jayavel Pachamuthu; Nakata Yoshiaki; Arakawa Yasuhiko; Tatebayashi Jun; Sugawara Mitsuru; Ebe Hiroji; Wada Osamu; Kita Takashi; Tanaka Hirokazu; Akiyama Tomoyuki

Control of InxGa1-;xAs Capping Layer Induced Optical Polarization in Edge‐Emitting Photoluminescence of InAs Quantum Dots
Jpn. J. Appl. Phys., Part 1 43, 1978 (2004)
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1‐1 Rokkodai, Nada, Kobe 657‐8501, Japan;
155.
2004

Fukamachi Toshihiko; Hosomi Kazuhiko; Katsuyama Toshio; Arakawa Yasuhiko

Group‐Delay Properties of Coupled‐Defect Structures in Photonic Crystals
Jpn. J. Appl. Phys., Part 2 43, L449 (2004)
Nanoelectronics Collaborative Research Center, Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
156.
2004

Mori K.; Hirooka Y.; Katsurayama H.; Komurasaki K.; Arakawa Y.

Effect of the Refilling Processes on the Thrust Generation of a Laser Pulsejet
AIP Conf. Proc. 702, 40 (2004)
Department of Advanced Energy, University of Tokyo, Hongo 7‐3‐1, Bunkyo‐ku, 113‐8656, Tokyo, JAPAN;
157.
2004

Park Se-Ki; Tatebayashi Jun; Arakawa Yasuhiko

Formation of ultrahigh-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition
Appl. Phys. Lett. 84, 1877 (2004)
Research Center for Advanced Science and Technology, Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo, 153-8904, Japan
158.
2004

Jayavel P.; Tanaka H.; Kita T.; Wada O.; Ebe H.; Sugawara M.; Tatebayashi J.; Arakawa Y.; Nakata Y.; Akiyama T.

Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
Appl. Phys. Lett. 84, 1820 (2004)
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;
159.
2004

Nomura Masahiro; Arita Munetaka; Ashihara Satoshi; Nishioka Masao; Arakawa Yasuhiko; Shimura Tsutomu; Kuroda Kazuo

Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue‐Violet Laser Diode
Jpn. J. Appl. Phys., Part 2 43, L340 (2004)
Institute of Industrial Science, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8505, Japan;
160.
2004

Zheng Z. W.; Shen B.; Gui Y. S.; Hoshino K.; Chu J. H.; Guo S. L.; Zheng Y. D.; Shi Y.; Zhang R.; Zhou H. M.; Chen D. J.; Liu J.; Tang N.; Jiang C. P.; Qiu Z. J.; Arakawa Y.

Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures
J. Appl. Phys. 95, 2473 (2004)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China;
161.
2004

Nakaoka Toshihiro; Kakitsuka Takaaki; Saito Toshio; Arakawa Yasuhiko

Manipulation of electronic states in single quantum dots by micromachined air-bridge
Appl. Phys. Lett. 84, 1392 (2004)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
162.
2004

Jarasiunas K.; Gudelis V.; Aleksiejunas R.; Sudzius M.; Iwamoto S.; Nishioka M.; Shimura T.; Kuroda K.; Arakawa Y.

Picosecond dynamics of spin-related optical nonlinearities in InxGa1-x;As multiple quantum wells at 1064 nm
Appl. Phys. Lett. 84, 1043 (2004)
Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania;
163.
2004

Katsuyama Toshio; Hosomi Kazuhiko; Fukamachi Toshihiko; Arakawa Yasuhiko

Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
Jpn. J. Appl. Phys., Part 1 43, 6104 (2004)
164.
2004

Otsubo Koji; Ebe Hiroji; Sugawara Mitsuru; Ishida Mitsuru; Okumura Shigekazu; Akiyama Tomoyuki; Nakata Yoshiaki; Hatori Nobuaki; Arakawa Yasuhiko

Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-$\mu$m P-Doped Quantum-Dot Lasers without Current Adjustments
Jpn. J. Appl. Phys., Part 2 43, L1124 (2004)
165.
2004

Takemoto Kazuya; Sakuma Yoshiki; Hirose Shinichi; Usuki Tatsuya; Yokoyama Naoki; Miyazawa Toshiyuki; Takatsu Motomu; Arakawa Yasuhiko

Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-$\mu$m Optical-Fiber Band
Jpn. J. Appl. Phys., Part 2 43, L993 (2004)
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
166.
2003

Nakaoka T.; Kakitsuka T.; Saito T.; Kako S.; Ishida S.; Nishioka M.; Yoshikuni Y.; Arakawa Y.

Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures
J. Appl. Phys. 94, 6812 (2003)
Research Center for Advanced Science and Technology, Institute of Industrial Science, and Center for Collaborative Research, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
167.
2003

Nomura Masahiro; Arita Munetaka; Arakawa Yasuhiko; Ashihara Satoshi; Kako Satoshi; Nishioka Masao; Shimura Tsutomu; Kuroda Kazuo

Nondegenerate pump and probe spectroscopy in InGaN thin films
J. Appl. Phys. 94, 6468 (2003)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
168.
2003

Eah Sang-Kee; Jhe Wonho; Arakawa Yasuhiko

Nearly diffraction-limited focusing of a fiber axicon microlens
Rev. Sci. Instrum. 74, 4969 (2003)
Center for Near-Field Atom-Photon Technology and School of Physics, Seoul National University, Seoul 151-742, Korea;
169.
2003

Kitamura M.; Imada T.; Arakawa Y.

Organic light-emitting diodes driven by pentacene-based thin-film transistors
Appl. Phys. Lett. 83, 3410 (2003)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504, Japan;
170.
2003

Tang N.; Someya T.; Hoshino K.; Chu J. H.; Guo S. L.; Qiu Z. J.; Jiang C. P.; Gui Y. S.; Zheng Y. D.; Shi Y.; Zhang R.; Lu J.; Chen D. J.; Liu J.; Zheng Z. W.; Shen B.; Arakawa Y.

Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures
J. Appl. Phys. 94, 5420 (2003)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
171.
2003

Yu Young-Jun; Jhe Wonho; Arakawa Yasuhiko

High-resolution near-field spectroscopy of InAs single quantum dots at 70 K
Appl. Phys. Lett. 83, 3024 (2003)
Center for Near-field Atom-photon Technology and Physics Department, Seoul National University, Seoul 151-742, Korea;
172.
2003

Robinson James W.; Rice James H.; Jarjour Anas; Smith Jonathan D.; Taylor Robert A.; Oliver Rachel A.; Briggs G. Andrew D.; Kappers Menno J.; Humphreys Colin J.; Arakawa Yasuhiko

Time-resolved dynamics in single InGaN quantum dots
Appl. Phys. Lett. 83, 2674 (2003)
Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom;
173.
2003

Kako S.; Miyamura M.; Tachibana K.; Hoshino K.; Arakawa Y.

Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots
Appl. Phys. Lett. 83, 984 (2003)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;
174.
2003

Toda Y.; Matsubara T.; Morita R.; Yamashita M.; Hoshino K.; Someya T.; Arakawa Y.

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap
Appl. Phys. Lett. 82, 4714 (2003)
Department of Applied Physics, Hokkaido University, Kita 13 Nishi 8 Kita-ku, Sapporo 060-8628, Japan;
175.
2003

Mori K.; Katsurayama H.; Hirooka Y.; Komurasaki K.; Arakawa Y.

Conversion of Blast Wave to Impulse in a Pulsed‐laser Thruster
AIP Conf. Proc. 664, 95 (2003)
Department of Advanced Energy, University of Tokyo, Hongo 7‐3‐1, Bunkyo‐ku, 113‐8656, Tokyo, JAPAN;
176.
2003

Kitamura Masatoshi; Imada Tadahiro; Arakawa Yasuhiko

Organic Transistor Circuits for Application to Organic Light‐Emitting‐Diode Displays
Jpn. J. Appl. Phys., Part 1 42, 2483 (2003)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8504, Japan;
177.
2003

Tatebayashi Jun; Iwamoto Satoshi; Kako Satoshi; Ishida Satomi; Arakawa Yasuhiko

Optical Characteristics of Two‐Dimensional Photonic Crystal Slab Nanocavities with Self‐Assembled InAs Quantum Dots for 1.3 μm Light Emission
Jpn. J. Appl. Phys., Part 1 42, 2391 (2003)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153‐8904, Japan;
178.
2003

Zheng Z. W.; Shen B.; Gui Y. S.; Jiang C. P.; Tang N.; Zhang R.; Shi Y.; Zheng Y. D.; Guo S. L.; Zheng G. Z.; Chu J. H.; Someya T.; Arakawa Y.

Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-x;N/GaN heterointerfaces
Appl. Phys. Lett. 82, 1872 (2003)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China;
179.
2003

Zheng Z. W.; Shen B.; Jiang C. P.; Gui Y. S.; Someya T.; Zhang R.; Shi Y.; Zheng Y. D.; Guo S. L.; Chu J. H.; Arakawa Y.

Multisubband transport of the two-dimensional electron gas in AlxGa1-x;N/GaN heterostructures
J. Appl. Phys. 93, 1651 (2003)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
180.
2002

Toda Yasunori; Kako Satoshi; Nishioka Masao; Arakawa Yasuhiko

Line Broadening of Photoluminescence Excitation Resonances in Single Self‐Assembled Quantum Dots
Jpn. J. Appl. Phys., Part 2 41, L1464 (2002)
Department of Applied Physics, Hokkaido University, Kita 13 Nishi 8, Kita‐ku, Sapporo 060‐8628, Japan;
181.
2002

Nakaoka T.; Kako S.; Ishida S.; Nishioka M.; Arakawa Y.

Optical anisotropy of self-assembled InGaAs quantum dots embedded in wall-shaped and air-bridge structures
Appl. Phys. Lett. 81, 3954 (2002)
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
182.
2002

Mori Koichi; Komurasaki Kimiya; Arakawa Yoshihiro

Influence of the focusing f number on the heating regime transition in laser absorption waves
J. Appl. Phys. 92, 5663 (2002)
Department of Advanced Energy, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, Japan
183.
2002

Miyamura M.; Tachibana K.; Arakawa Y.

High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 80, 3937 (2002)
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 Japan;
184.
2002

Eah Sang-Kee; Jhe Wonho; Arakawa Yasuhiko

Near-field optical photoluminescence microscopy of high-density InAs/GaAs single quantum dots
Appl. Phys. Lett. 80, 2779 (2002)
Center for Near-field Atom-photon Technology and School of Physics, Seoul National University, Seoul 151-742, Korea;
185.
2002

Zhou Yu-gang; Shen Bo; Someya Takao; Yu Hui-qiang; Liu Jie; Zhou Hui-mei; Zhang Rong; Shi Yi; Zheng You-dou; Arakawa Yasuhiko

Investigation of the Polarization‐Induced Charges in Modulation‐Doped Al;xGa1-;xN/GaN Heterostructures through Capacitance‐Voltage Profiling and Simulation
Jpn. J. Appl. Phys., Part 1 41, 2531 (2002)
National Laboratory of Solid State Microstuctures and Department of Physics, Nanjing University, Nanjing 210093, China
186.
2002

Shen Bo; Zheng You-dou; Liu Zhi-guo; Shi Yi; Yan Feng; Zhang Rong; Zhou Hui-mei; Liu Jie; Bi Zhao-xia; Someya Takao; Li Wei-ping; Arakawa Yasuhiko

Influence of Ferroelectric Polarization on the Properties of Two‐Dimensional Electron Gas in Pb(Zr;0.53Ti0.47)O;3/AlxGa1-;xN/GaN Structures
Jpn. J. Appl. Phys., Part 1 41, 2528 (2002)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
187.
2002

Kako S.; Someya T.; Arakawa Y.

Observation of enhanced spontaneous emission coupling factor in nitride-based vertical-cavity surface-emitting laser
Appl. Phys. Lett. 80, 722 (2002)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
188.
2002

Li Z.-F.; Lu W.; Shen S. C.; Holland S.; Hu C. M.; Heitmann D.; Shen B.; Zheng Y. D.; Someya T.; Arakawa Y.

Cyclotron resonance and magnetotransport measurements in AlxGa1-x;N/GaN heterostructures for x=0.15–0.30;
Appl. Phys. Lett. 80, 431 (2002)
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, People’s Republic of China;
189.
2001

Kyhm K.; Taylor R. A.; Ryan J. F.; Someya T.; Arakawa Y.

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
Appl. Phys. Lett. 79, 3434 (2001)
Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom;
190.
2001

Someya T.; Hoshino K.; Arakawa Y.

Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition
Appl. Phys. Lett. 79, 1992 (2001)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;
191.
2001

Iwamoto S.; Kageshima H.; Yuasa T.; Shimura T.; Fukutani K.; Arakawa Y.; Someya T.; Nishioka M.; Kuroda K.

Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry
J. Appl. Phys. 89, 5889 (2001)
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
192.
2001

Tatebayashi Jun; Nishioka Masao; Arakawa Yasuhiko

Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 78, 3469 (2001)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
193.
2001

Iwamoto S.; Taketomi S.; Kageshima H.; Nishioka M.; Someya T.; Arakawa Y.; Fukutani K.; Shimura T.; Kuroda K.

Photorefractive multiple quantum wells at 1064 nm
Opt. Lett. 26, 22 (2001)
Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan
194.
2001

Li Xin-Qi; Arakawa Yasuhiko

Single qubit from two coupled quantum dots: An approach to semiconductor quantum computations
Phys. Rev. A 63, 012302 (2001)
Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
195.
2000

Tatebayashi Jun; Nishioka Masao; Someya Takao; Arakawa Yasuhiko

Area-controlled growth of InAs quantum dots and improvement of density and size distribution
Appl. Phys. Lett. 77, 3382 (2000)
Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan
196.
2000

Jarasiunas Kestutis; Mizeikis Vygantas; Iwamoto Satoshi; Shimura Tsutomu; Arakawa Yasuhiko; Fukutani Katsuyuki; Someya Takao; Nishioka Masao; Kuroda Kazuo

Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique
Jpn. J. Appl. Phys., Part 1 39, 5781 (2000)
Institute of Material Science and Applied Research, Vilnius University, Sauletekio al. 9, Build. III, Vilnius 2040, Lithuania
197.
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Zheng Z. W.; Shen B.; Zhang R.; Gui Y. S.; Jiang C. P.; Ma Z. X.; Zheng G. Z.; Guo S. L.; Shi Y.; Han P.; Zheng Y. D.; Someya T.; Arakawa Y.

Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-x;N/GaN heterostructures
Phys. Rev. B 62, R7739 (2000)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
198.
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Someya T.; Hoshino K.; Harris J. C.; Tachibana K.; Arakawa Y.

Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N quantum wells
Appl. Phys. Lett. 77, 1336 (2000)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan;
199.
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Harris J. C.; Someya T.; Kako S.; Hoshino K.; Arakawa Y.

Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells
Appl. Phys. Lett. 77, 1005 (2000)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904;
200.
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Toda Y.; Sugimoto T.; Nishioka M.; Arakawa Y.

Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots
Appl. Phys. Lett. 76, 3887 (2000)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi Minato-ku, Tokyo 106, Japan;
201.
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Tachibana Koichi; Someya Takao; Ishida Satomi; Arakawa Yasuhiko

Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature
Appl. Phys. Lett. 76, 3212 (2000)
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
202.
2000

Shen B.; Someya T.; Arakawa Y.

Influence of strain relaxation of the AlxGa1-x;N barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1-x;N/GaN heterostructures
Appl. Phys. Lett. 76, 2746 (2000)
Institute of Industrial Science and Research Center for Advanced Science and Technology, University of Tokyo, Minato-ku, Tokyo 106-8558, Japan;
203.
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Tatebayashi Jun; Someya Takao; Nishioka Masao; Ishida Satomi; Arakawa Yasuhiko

Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
Jpn. J. Appl. Phys., Part 1 39, 2344 (2000)
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
204.
2000

Moriwaki Osamu; Someya Takao; Tachibana Koichi; Ishida Satomi; Arakawa Yasuhiko

Narrow photoluminescence peaks from localized states in InGaN quantum dot structures
Appl. Phys. Lett. 76, 2361 (2000)
Research Center for Advanced Science and Technology, Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan
205.
2000

Shen B.; Someya T.; Moriwaki O.; Arakawa Y.

Effect of carrier confinement on photoluminescence from modulation-doped AlxGa1-x;N/GaN heterostructures
Appl. Phys. Lett. 76, 679 (2000)
Institute of Industrial Science and Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
206.
1999

Cingolani R.; Miura N.; Uchida K.; Ahopelto J.; Tulkki J.; Maijala K.; Virkkala R.; Sopanen M.; Lipsanen H.; Rinaldi R.; Arakawa Y.

Electron-Hole Correlation in Quantum Dots under a High Magnetic Field (up to 45 T)
Phys. Rev. Lett. 83, 4832 (1999)
INFM-Lecce, Dipartimento Ingegneria dell'Innovazione, Universita'di Lecce, via Arnesano, 73100 Lecce, Italy
207.
1999

Someya Takao; Arakawa Yasuhiko

Microphotoluminescence intensity images of InGaN single quantum wells
Jpn. J. Appl. Phys., Part 2 38, L1216 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
208.
1999

Tachibana Koichi; Someya Takao; Arakawa Yasuhiko; Werner Ralph; Forchel Alfred

Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
Appl. Phys. Lett. 75, 2605 (1999)
Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan
209.
1999

Tachibana Koichi; Someya Takao; Arakawa Yasuhiko; Werner Ralph; Forchel Alfred

Room temperature lasing action in an Ingan quantum dot laser under optical excitation
Opt. Photon. News 10, 43 (1999)
Institute of Industrial Science, University of Tokyo, Japan
210.
1999

Li Xin-Qi; Arakawa Yasuhiko

Optical linewidths in an individual quantum dot
Phys. Rev. B 60, 1915 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
211.
1999

Saito Toshio; Arakawa Yasuhiko

Atomic structure and phase stability of InxGa1-x;N random alloys calculated using a valence-force-field method
Phys. Rev. B 60, 1701 (1999)
Center for Collaborative Research, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
212.
1999

Suzuki K.; Hogg R. A.; Arakawa Y.

Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
J. Appl. Phys. 85, 8349 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
213.
1999

Toda Y.; Moriwaki O.; Nishioka M.; Arakawa Y.

Efficient Carrier Relaxation Mechanism in InGaAs/GaAs; Self-Assembled Quantum Dots Based on the Existence of Continuum States
Phys. Rev. Lett. 82, 4114 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi Minato-ku, Tokyo 106, Japan
214.
1999

Harris Janet C.; Brisset Helene; Someya Takao; Arakawa Yasuhiko

Growth condition dependence of the photoluminescence properties of InxGa1-x;N/InyGa1-y;N multiple quantum wells grown by MOCVD
Jpn. J. Appl. Phys., Part 1 38, 2613 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
215.
1999

Iwamoto S.; Kageshima H.; Shimura T.; Fukutani K.; Arakawa Y.; Someya T.; Nishioka M.; Yuasa T.; Kuroda K.

Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells
Opt. Lett. 24, 321 (1999)
Institute of Industrial Science, University of Tokyo, Roppongi, Minato-ku, Tokyo 106-8558, Japan
216.
1999

Li Xin-Qi; Nakayama Hajime; Arakawa Yasuhiko

Phonon bottleneck in quantum dots: Role of lifetime of the confined optical phonons
Phys. Rev. B 59, 5069 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
217.
1999

Tachibana K.; Someya T.; Arakawa Y.

Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 74, 383 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan;
218.
1999

Li Xin-Qi; Nakayama Hajime; Arakawa Yasuhiko

Lifetime of confined LO phonons in quantum dots and its impact on phonon bottleneck issue
Jpn. J. Appl. Phys., Part 1 38, 473 (1999)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
219.
1998

Someya T.; Arakawa Y.

Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition
Appl. Phys. Lett. 73, 3653 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
220.
1998

Someya Takao; Tachibana Koichi; Lee Jungkeun; Kamiya Takeshi; Arakawa Yasuhiko

Lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser
Jpn. J. Appl. Phys., Part 2 37, L1424 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan;
221.
1998

Toda Y.; Shinomori S.; Suzuki K.; Arakawa Y.

Polarized photoluminescence spectroscopy of single self-assembled InAs quantum dots
Phys. Rev. B 58, R10147 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi Minato-ku, Tokyo 106, Japan;
222.
1998

Yamanaka K.; Suzuki K.; Ishida S.; Arakawa Y.

Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection
Appl. Phys. Lett. 73, 1460 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo 106, Japan;
223.
1998

Toda Y.; Shinomori S.; Suzuki K.; Arakawa Y.

Near-field magneto-optical spectroscopy of single self-assembled InAs quantum dots
Appl. Phys. Lett. 73, 517 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi Minato-ku, Tokyo 106, Japan;
224.
1998

Cingolani R.; Sogawa F.; Arakawa Y.; Rinaldi R.; DeVittorio M.; Passaseo A.; Taurino A.; Catalano M.; Vasanelli L.

Microphotoluminescence spectroscopy of vertically stacked InxGa1-x;As/GaAs quantum wires
Phys. Rev. B 58, 1962 (1998)
Institute of Industrial Science, University of Tokyo, Tokyo, Japan
225.
1998

Cingolani R.; Sogawa F.; Arakawa Y.; Vanzetti L.; Sorba L.; Franciosi A.

Microprobe spectroscopy of localized exciton states in II–VI quantum wells
Appl. Phys. Lett. 73, 148 (1998)
Institute of Industrial Science, University of Tokyo, Japan
226.
1998

Hoshino Katsuyuki; Uchida Takahiro; Kamata Norihiko; Nishioka Masao; Yamada Koji; Arakawa Yasuhiko

Below-gap spectroscopy of undoped GaAs/AlGaAs quantum wells by two-wavelength excited photoluminescence
Jpn. J. Appl. Phys., Part 1 37, 3210 (1998)
Department of Functional Materials Science, Saitama University, 255 Shimo-Ohkubo, Urawa, Saitama 338, Japan;
227.
1998

Hogg R. A.; Suzuki K.; Tachibana K.; Finger L.; Hirakawa K.; Arakawa Y.

Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
Appl. Phys. Lett. 72, 2856 (1998)
University of Tokyo, Institute for Industrial Science, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
228.
1998

Saito T.; Schulman J. N.; Arakawa Y.

Strain-energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces: Tight-binding analysis
Phys. Rev. B 57, 13016 (1998)
Center for Collaborative Research, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
229.
1998

Li Xin-Qi; Arakawa Yasuhiko

Anharmonic decay of confined optical phonons in quantum dots
Phys. Rev. B 57, 12285 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
230.
1998

Sekine Norihiko; Hirakawa Kazuhiko; Arakawa Yasuhiko

Terahertz emission from quantum beats in coupled quantum wells
Jpn. J. Appl. Phys., Part 1 37, 1643 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
231.
1998

Ishida S.; Arakawa Y.; Wada K.

Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor deposition
Appl. Phys. Lett. 72, 800 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo 106, Japan;
232.
1998

Suzuki Kenji; Hogg Richard A.; Tachibana Koichi; Arakawa Yasuhiko

Density control of GaSb/GaAs self-assembled quantum dots (∼25 ;nm) grown by molecular beam epitaxy
Jpn. J. Appl. Phys., Part 2 37, L203 (1998)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan;
233.
1997

Li Xin-Qi; Arakawa Yasuhiko

Ultrafast energy relaxation in quantum dots through defect states: A lattice-relaxation approach
Phys. Rev. B 56, 10423 (1997)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
234.
1997

Schur Richard; Sogawa Fumihiro; Nishioka Masao; Ishida Satomi; Arakawa Yasuhiko

Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
Jpn. J. Appl. Phys., Part 2 36, L357 (1997)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
235.
1997

Nagamune Yasushi; Noda Takeshi; Ohno Yuzo; Arakawa Yasuhiko; Sakaki Hiroyuki; Watanabe Masanobu

Phototransistors Using Point Contact Structures
Jpn. J. Appl. Phys., Part 1 36, 1955 (1997)
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
236.
1997

Arakawa T.; Kato Y.; Sogawa F.; Arakawa Y.

Photoluminescence studies of GaAs quantum wires with quantum confined Stark effect
Appl. Phys. Lett. 70, 646 (1997)
Institute of Industrial Science, University of Tokyo, Tokyo 106, Japan
237.
1997

Feng Xiao-Ping; Arakawa Yasuhiko

Defect Modes in Two-Dimensional Triangular Photonic Crystals
Jpn. J. Appl. Phys., Part 2 36, L120 (1997)
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
238.
1996

Sogawa F.; Hangleiter A.; Watabe H.; Nagamune Y.; Nishioka M.; Arakawa Y.

Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers
Appl. Phys. Lett. 69, 3137 (1996)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
239.
1996

Ohnesorge B.; Albrecht M.; Oshinowo J.; Forchel A.; Arakawa Y.

Rapid carrier relaxation in self‐assembled In;xGa1-;xAs/GaAs quantum dots
Phys. Rev. B 54, 11532 (1996)
Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany;
240.
1996

Arakawa T.; Watabe H.; Nagamune Y.; Arakawa Y.

Fabrication and microscopic photoluminescence imaging of ridge‐type InGaAs quantum wires grown on a (110) cleaved plane of AlGaAs/GaAs superlattice
Appl. Phys. Lett. 69, 1294 (1996)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
241.
1996

Tanaka Takuji; Zhang Zhenlong; Nishioka Masao; Arakawa Yasuhiko

Magnetic field dependence of exciton oscillator strength by measurements of magnetoexciton‐polariton mode splitting in quantum wells with a microcavity
Appl. Phys. Lett. 69, 887 (1996)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
242.
1996

Toda Yasunori; Kourogi Motonobu; Ohtsu Motoichi; Nagamune Yasushi; Arakawa Yasuhiko

Spatially and spectrally resolved imaging of GaAs quantum‐dot structures using near‐field optical technique
Appl. Phys. Lett. 69, 827 (1996)
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori‐ku, Yokohama, Kanagawa 226, Japan;
243.
1996

Sekine N.; Hirakawa K.; Sogawa F.; Arakawa Y.; Usami N.; Shiraki Y.; Katoda T.

Ultrashort lifetime photocarriers in Ge thin films
Appl. Phys. Lett. 68, 3419 (1996)
Institute of Industrial Science, University of Tokyo, 7‐22‐11 Roppongi, Minato‐ku, Tokyo 106, Japan;
244.
1995

Nagamune Y.; Watabe H.; Nishioka M.; Arakawa Y.

Observation of a single photoluminescence peak from a single quantum dot
Appl. Phys. Lett. 67, 3257 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
245.
1995

Nagamune Y.; Watabe H.; Sogawa F.; Arakawa Y.

One‐dimensional exciton diffusion in GaAs quantum wires
Appl. Phys. Lett. 67, 1535 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
246.
1995

Kitamura M.; Nishioka M.; Oshinowo J.; Arakawa Y.

Insitu fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition
Appl. Phys. Lett. 66, 3663 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
247.
1995

Nagamune Y.; Tanaka T.; Kono T.; Tsukamoto S.; Nishioka M.; Arakawa Y.; Uchida K.; Miura N.

Observation of enhanced lateral confinement of excitons in GaAs quantum wires with various sizes (7–30 nm) by magnetophotoluminescence measurements
Appl. Phys. Lett. 66, 2502 (1995)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
248.
1994

Norris T. B.; Nishioka M.; Arakawa Y.; Sung C.-Y.; Rhee J.-K.; Weisbuch C.

Time‐resolved vacuum Rabi oscillations in a semiconductor quantum microcavity
Phys. Rev. B 50, 14663 (1994)
Center for Ultrafast Optical Science, University of Michigan, 2200 Bonisteel Boulevard, Ann Arbor, Michigan 48109‐2099;
249.
1994

Tanaka Takuji; Arakawa Yasuhiko; Bauer Gerrit W. E.

Magnetoexcitons in quantum wires with an anisotropic parabolic potential
Phys. Rev. B 50, 7719 (1994)
Institute of Industrial Science,University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
250.
1994

Oshinowo J.; Nishioka M.; Ishida S.; Arakawa Y.

Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
Appl. Phys. Lett. 65, 1421 (1994)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
251.
1994

Nagamune Y.; Nishioka M.; Tsukamoto S.; Arakawa Y.

GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth
Appl. Phys. Lett. 64, 2495 (1994)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
252.
1994

Arakawa T.; Nishioka M.; Nagamune Y.; Arakawa Y.

Fabrication of vertical‐microcavity quantum wire lasers
Appl. Phys. Lett. 64, 2200 (1994)
Institute of Industrial Science, University of Tokyo 7‐22‐1, Roppongi, Minato‐ku, Tokyo 106;
253.
1994

Kono T.; Tsukamoto S.; Nagamune Y.; Sogawa F.; Nishioka M.; Arakawa Y.

Exciton radiative lifetime in GaAs quantum wires grown by metalorganic chemical‐vapor selective growth
Appl. Phys. Lett. 64, 1564 (1994)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
254.
1994

Zhang Z. L.; Nishioka M.; Weisbuch C.; Arakawa Y.

Demonstration of confined optical field effect in a vertical microcavity by examining the low temperature photon‐exciton interaction in two kinds of quantum wells
Appl. Phys. Lett. 64, 1068 (1994)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
255.
1993

Tsukamoto S.; Nagamune Y.; Nishioka M.; Arakawa Y.

Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth
Appl. Phys. Lett. 63, 355 (1993)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
256.
1993

Tanaka T.; Singh J.; Arakawa Y.; Bhattacharya P.

Near band edge polarization dependence as a probe of structural symmetry in GaAs/AlGaAs quantum dot structures
Appl. Phys. Lett. 62, 756 (1993)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Meguro‐ku, Tokyo 153, Japan;
257.
1993

Tsukamoto S.; Nagamune Y.; Nishioka M.; Arakawa Y.

Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth
Appl. Phys. Lett. 62, 49 (1993)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
258.
1992

Weisbuch C.; Nishioka M.; Ishikawa A.; Arakawa Y.

Observation of the coupled exciton‐photon mode splitting in a semiconductor quantum microcavity
Phys. Rev. Lett. 69, 3314 (1992)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Meguro‐ku, Tokyo 153, Japan;
259.
1992

Nagamune Y.; Arakawa Y.; Tsukamoto S.; Nishioka M.; Sasaki S.; Miura N.

Photoluminescence spectra and anisotropic energy shift of GaAs quantum wires in high magnetic fields
Phys. Rev. Lett. 69, 2963 (1992)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
260.
1992

Takahashi T.; Arakawa Y.; Nishioka M.; Ikoma T.

Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition
Appl. Phys. Lett. 60, 68 (1992)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
261.
1992

Tsukamoto S.; Nagamune Y.; Nishioka M.; Arakawa Y.

Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition
J. Appl. Phys. 71, 533 (1992)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
262.
1991

Takahashi T.; Arakawa Y.; Nishioka M.

In situ patterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires
Appl. Phys. Lett. 58, 2372 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
263.
1991

Yamauchi T.; Arakawa Y.; Nishioka M.

Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells
Appl. Phys. Lett. 58, 2339 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
264.
1991

Sogawa T.; Arakawa Y.

Picosecond dynamics in gain‐switched uncoupled and coupled quantum well lasers
Appl. Phys. Lett. 58, 2064 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐I Komaba, Meguro‐ku, Tokyo, 153 Japan;
265.
1991

Arakawa Yasuhiko

Mesoscopic size fabrication technology
AIP Conf. Proc. 227, 84 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153 Japan;
266.
1991

Sogawa T.; Arakawa Y.

Wavelength switching of picosecond pulse (<10 ps) in a quantum well laser and its all‐optical logic gating operations
Appl. Phys. Lett. 58, 1709 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
267.
1991

Takahashi T.; Schulman J. N.; Arakawa Y.

Dependence of lasing characteristics of quantum well lasers on substrate orientation: Tight‐binding theory
Appl. Phys. Lett. 58, 881 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
268.
1991

Arakawa Y.; Yamauchi T.; Schulman J. N.

Tight‐binding analysis of energy‐band structures in quantum wires
Phys. Rev. B 43, 4732 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
269.
1991

Takahashi T.; Nishioka M.; Arakawa Y.

Differential gain of GaAs/AlGaAs quantum well and modulation‐doped quantum well lasers
Appl. Phys. Lett. 58, 4 (1991)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
270.
1990

Yamauchi T.; Arakawa Y.; Schulman J. N.

Tight‐binding analysis of the conduction‐band structure in quantum wires
Appl. Phys. Lett. 57, 1224 (1990)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 106, Japan;
271.
1990

Sogawa T.; Arakawa Y.

Picosecond spectral dynamics of gain‐switched quantum‐well lasers and its dependence on quantum‐well structures
J. Appl. Phys. 67, 2675 (1990)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
272.
1988

Sogawa T.; Arakawa Y.; Tanaka M.; Sakaki H.

Observation of a short optical pulse (<1.3 ps) from a gain‐switched quantum well laser
Appl. Phys. Lett. 53, 1580 (1988)
Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan;
273.
1987

Arakawa Y.; Sogawa T.; Nishioka M.; Tanaka M.; Sakaki H.

Picosecond pulse generation (<1.8 ps) in a quantum well laser by a gain switching method
Appl. Phys. Lett. 51, 1295 (1987)
The University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
274.
1985

Arakawa Yasuhiko; Sakaki Hiroyuki; Nishioka Masao; Yoshino Junji; Kamiya Takeshi

Recombination lifetime of carriers in GaAs‐GaAlAs quantum wells near room temperature
Appl. Phys. Lett. 46, 519 (1985)
Institute of Industrial Science, University of Tokyo, Roppongi 7‐22‐1, Minato‐ku, Tokyo 106, Japan;
275.
1985

Sakaki H.; Arakawa Y.; Nishioka M.; Yoshino J.; Okamoto H.; Miura N.

Light emission from zero‐dimensional excitons—Photoluminescence from quantum wells in strong magnetic fields
Appl. Phys. Lett. 46, 83 (1985)
Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan;
276.
1984

Arakawa Yasuhiko; Nishioka Masao; Miura Noboru

Use of high magnetic fields to estimate carrier leakage current in GaInAsP‐InP double heterostructure lasers
Appl. Phys. Lett. 45, 7 (1984)
Institute of Industrial Science, University of Tokyo, Roppongi 7‐22‐1, Minato‐ku, Tokyo 106, Japan;
277.
1982

Arakawa Y.; Sakaki H.

Multidimensional quantum well laser and temperature dependence of its threshold current
Appl. Phys. Lett. 40, 939 (1982)
Institute of Industrial Science, University of Tokyo, Minato‐ku, Tokyo 106, Japan;

Co-authors

Co-publications
56

Nishioka, Masao
41

Iwamoto, Satoshi
36

Ishida, Satomi
30

Someya, Takao
25

Nakaoka, Toshihiro
22

Kitamura, Masatoshi
22

Tatebayashi, Jun
21

Nomura, Masahiro
20

Sugawara, Mitsuru
19

Kako, Satoshi
18

Ebe, Hiroji
15

Komurasaki, Kimiya
14

Hoshino, Katsuyuki
14

Kumagai, Naoto
14

Guimard, Denis