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Charge carriers: generation, ...
Photoelectric conversion: sol...
III-V semiconductors
Photoconduction and photovolt...
III-V semiconductor-to-semico...
III-V and II-VI semiconductors
Spectroscopy of solid state d...
Other semiconductor-to-semico...
Chemical vapor deposition
Defects and impurities: dopin...
II-VI semiconductors
Performance characteristics o...
Semiconductor compounds
Metal-insulator-semiconductor...
1.
Johnston Steve; Unold Thomas; Repins Ingrid; Sundaramoorthy Rajalakshmi; Jones Kim M.; To Bobby; Call Nathan; Ahrenkiel Richard
Imaging characterization techniques applied to Cu(In,Ga)Se2 solar cells
2.
Ahrenkiel R. K.; Johnston S. W.
Interaction of microwaves with photoelectrons in semiconductors
3.
Ahrenkiel R. K.
Photoconductive analysis of ion implantation damage and annealing in silicon wafers
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4.
Luther J. M.; Kurtz S. R.; Johnston S. W.; Ahrenkiel R. K.; Collins R. T.
Temperature-dependent dark current measurements in GaAsN heterojunction diodes
5.
Hudait M. K.; Lin Y.; Goss S. H.; Smith P.; Bradley S.; Brillson L. J.; Johnston S. W.; Ahrenkiel R. K.; Ringel S. A.
Evidence of interface-induced persistent photoconductivity in InP/;In0.53Ga0.47As/;InP double heterostructures grown by molecular-beam epitaxy
6.
Johnston S. W.; Kurtz S. R.; Friedman D. J.; Ptak A. J.; Ahrenkiel R. K.; Crandall R. S.
Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement
7.
Lin Y.; Hudait M. K.; Johnston S. W.; Ahrenkiel R. K.; Ringel S. A.
Photoconductivity decay in metamorphic InAsP/;InGaAs double heterostructures grown on InAsyP1-y; compositionally step-graded buffers
8.
Metzger W. K.; Dashdorj J.; Ahrenkiel R. K.; Friedman D. J.
Analysis of charge separation dynamics in a semiconductor junction
9.
Wanlass M. W.; Ahrenkiel S. P.; Ahrenkiel R. K.; Carapella J. J.; Wehrer R. J.; Wernsman B.
Recent Advances in Low‐Bandgap, InP‐Based GaInAs/InAsP Materials and Devices for Thermophotovoltaic (TPV) Energy Conversion
10.
Ahrenkiel R. K.; Metzger W.; Friedman D. F.
Transport properties of ordered-GalnP/;GaAs heterostructures
11.
Ahrenkiel R. K.; Dashdorj J.
Interface recombination velocity measurement by a contactless microwave technique
12.
Metzger W. K.; Wanlass M. W.; Ellingson R. J.; Ahrenkiel R. K.; Carapella J. J.
Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. ;79, 3272 (2001)]
13.
Johnston S. W.; Tu C. W.; Ahrenkiel R. K.; Hong Y. G.
Measurement of charge-separation potentials in GaAs1-x;Nx
14.
Metzger W. K.; Albin D.; Levi D.; Sheldon P.; Li X.; Keyes B. M.; Ahrenkiel R. K.
Time-resolved photoluminescence studies of CdTe solar cells
15.
Balcioglu A.; Ahrenkiel R. K.; Friedman D. J.
Effects of oxygen contamination on diffusion length in p+-n; GaInNAs solar cells
16.
Metzger W. K.; Wanlass M. W.; Gedvilas L. M.; Verley J. C.; Carapella J. J.; Ahrenkiel R. K.
Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP
17.
Auger recombination in low-band-gap n-type InGaAs
18.
Ahrenkiel R. K.; Ellingson R.; Metzger W.; Lubyshev D. I.; Liu W. K.
Auger recombination in heavily carbon-doped GaAs
19.
Ahrenkiel R. K.; Johnston S. W.; Webb J. D.; Gedvilas L. M.; Carapella J. J.; Wanlass M. W.
Recombination lifetimes in undoped, low-band gap InAsyP1-y;/InxGa1-x;As double heterostructures grown on InP substrates
20.
Ahrenkiel R. K.; Johnston S. W.; Keyes B. M.; Friedman D. J.; Vernon S. M.
Erratum: “Transport properties of ;GaAs1-x;Nx thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. ;77, 3794 (2000)]
21.
Balcioglu A.; Ahrenkiel R. K.; Hasoon F.
Deep-level impurities in CdTe/CdS thin-film solar cells
22.
Transport properties of GaAs1-x;Nx thin films grown by metalorganic chemical vapor deposition
23.
Evidence of an oxygen recombination center in p+–n; GaInNAs solar cells
24.
Bose D. N.; Ahrenkiel R. K.; Bhunia S.
Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe
25.
Ahrenkiel S. P.; Johnston S. W.; Ahrenkiel R. K.; Arent D. J.; Hanna M. C.; Wanlass M. W.
Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As
26.
Ahrenkiel R. K.; Ellingson R.; Johnston S.; Webb J.; Carapella J.; Wanlass M.
Recombination lifetime of InxGa1-x;As alloys used in thermophotovoltaic converters
27.
Johnston S. W.; Ahrenkiel R. K.
Measurement of the temperature-dependent recombination lifetimes in photovoltaic materials
28.
Woods L. M.; Levi D. H.; Kaydanov V.; Robinson G. Y.; Ahrenkiel R. K.
Electrical characterization of etched grain-boundary properties from as-processed px-CdTe-based solar cells
29.
Large-signal injection-level spectroscopy of impurities in silicon
30.
Song W.; Mao D.; Kaydanov V.; Ohno T. R.; Trefny J. U.; Ahrenkiel R. K.; Levi D. H.; Johnston S.; McCandless B. E.
Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance
31.
Song W.; Mao D.; Trefny J. U.; Ahrenkiel R. K.; Levi D. H.; Johnston S.
Influence of CdCl2 treatment on the electrical and optical properties of CdS thin film
32.
Ahrenkiel R. K.; Ellingson R.; Johnston S.; Wanlass M.
Recombination lifetime of In0.53Ga0.47As as a function of doping density
33.
Keyes B. M.; Ahrenkiel R. K.; Shaw G. J.; Summers G. P.
Minority-carrier lifetime damage coefficient of irradiated InP
34.
Venkatasubramanian Rama; Siivola Edward; O'Quinn Brooks; Keyes Brian; Ahrenkiel Richard
Pathways to high-efficiency GaAs solar cells on low-cost substrates
35.
Carrier recombination in silicon materials used for photovoltaic devices
36.
Ahrenkiel R. K.; Ahrenkiel S. P.; Arent D. J.; Olson J. M.
Carrier transport in ordered and disordered In0.53Ga0.47As
37.
Ahrenkiel R. K.; Ahrenkiel S. P.; Arent D. J.
Recombination lifetime in ordered and disordered InGaAs
38.
Venkatasubramanian R.; O'Quinn B.; Hills J.; Malta D.; Timmons M. L.; Hutchby J. A.; Ahrenkiel R.; Keyes B. M.
Development of high‐efficiency GaAs solar cells on polycrystalline Ge substrates
39.
Levi D. H.; Moutinho H. R.; Hasoon F. S.; Ahrenkiel R. K.; Kazmerski L. L.; Al-Jassim M. M.
Correlations of electro‐optical and nanostructural properties of CdTe thin films
40.
Ultra‐high frequency photoconductive decay for measuring recombination lifetime in silicon
41.
Ahrenkiel R. K.; Wangensteen T.; Al-Jassim M. M.; Wanlass M.; Coutts T.
Recombination lifetime of InxGa1-;xAs ternary alloys
42.
Rosenwaks Y.; Thacker B. R.; Ahrenkiel R. K.; Nozik A. J.; Yavneh I.
Photogenerated carrier dynamics under the influence of electric fields in III‐V semiconductors
43.
Ahrenkiel R. K.; Keyes B. M.; Levi D. L.; Emery K.; Chu T. L.; Chu S. S.
Spatial uniformity of minority‐carrier lifetime in polycrystalline CdTe solar cells
44.
Keyes B. M.; Dunlavy D. J.; Ahrenkiel R. K.; Shaw G.; Summers G. P.; Tzafaras N.; Lentz C.
Time‐resolved photoluminescence of undoped InP
45.
Rosenwaks Y.; Hanna M. C.; Levi D. H.; Szmyd D. M.; Ahrenkiel R. K.; Nozik A. J.
Hot‐carrier cooling in GaAs; Quantum wells versus bulk
46.
Webb J. D.; Dunlavy D. J.; Ciszek T.; Ahrenkiel R. K.; Wanlass M. W.; Noufi R.; Vernon S. M.
Room‐temperature measurement of photoluminescence spectra of semiconductors using an FT‐Raman spectrophotometer
47.
Zhang J.; Keyes B. M.; Asher S. E.; Ahrenkiel R. K.; Timmons M. L.
Giant recombination centers in Al0.10Ga0.90As grown by metalorganic chemical vapor deposition
48.
Sheldon P.; Keyes B. M.; Ahrenkiel R. K.; Asher S. E.
Minority carrier lifetimes in molecular beam epitaxy grown AlxGa1-;xAs/GaAs double heterostructures doped with aluminum
49.
Lundstrom M. S.; Melloch M. R.; Lush G. B.; Patkar M. P.; Young M.; Durbin S. M.; Gray J. L.; MacMillan H. F.; Keyes B. M.; Levi D. H.; Ahrenkiel R. K.
Radiative recombination and photon recycling in gallium arsenide solar cells
50.
Keyes B. M.; Emery K. A.; Ahrenkiel R. K.
Minority‐carrier lifetime of compound semiconductors; Polycrystalline CdTe
51.
Lovejoy M. L.; Melloch M. R.; Lundstrom M. S.; Ahrenkiel R. K.
Minority hole mobility in n+GaAs
52.
Lush G. B.; Melloch M. R.; Lundstrom M. S.; Levi D. H.; Ahrenkiel R. K.; MacMillan H. F.
Microsecond lifetimes and low interface recombination velocities in moderately doped n‐GaAs thin films
53.
Lovejoy M. L.; Melloch M. R.; Lundstrom M. S.; Keyes B. M.; Ahrenkiel R. K.; de Lyon T. J.; Woodall J. M.
Comparative study of minority electron properties in p+‐GaAs doped with beryllium and carbon
54.
Lush G. B.; MacMillan H. F.; Keyes B. M.; Levi D. H.; Melloch M. R.; Ahrenkiel R. K.; Lundstrom M. S.
A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition
55.
Ahrenkiel R. K.; Lundstrom M. S.; Melloch M. R.; Lush G. B.; Keyes B. M.; MacMillan H. F.
Minority‐carrier lifetime and photon recycling in ;n‐GaAs
56.
Zhang Jue; Sheldon P.; Ahrenkiel R. K.
A Hall probe technique for characterizing high‐temperature superconductors
57.
Venkatasubramanian R.; Timmons M. L.; Humphreys T. P.; Keyes B. M.; Ahrenkiel R. K.
High‐quality eutectic‐metal‐bonded AlGaAs‐GaAs thin films on Si substrates
58.
Bhattacharya R. N.; Parilla P. A.; Mason A.; Roybal L. L.; Ahrenkiel R. K.; Noufi R.; Hellmer R. P.; Kwak J. F.; Ginley D. S.
TlBaCaCuO and YBaCuO superconductor thin films via an electrodeposition process
59.
Ahrenkiel R. K.; Keyes B. M.; Dunlavy D. J.
Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers
60.
Bhattacharya R. N.; Noufi R.; Roybal L. L.; Ahrenkiel R. K.
YBaCuO Superconductor Thin Films via an Electrodeposition Process
61.
Ahrenkiel R. K.; Keyes B. M.; Shen T. C.; Chyi J. I.; Morkoc H.
Minority‐carrier lifetime in Al;xGa1-;xAs grown by molecular‐beam epitaxy
62.
Hanak Thomas R.; Ahrenkiel Richard K.; Timmons Michael L.
Capture barrier and the ionization entropy of the DX center in Se‐doped Al;xGa1-;xAs
63.
Timmons M. L.; Dunlavy D. J.; Colpitts T. S.; Venkatasubramanian R.; Keyes B. M.; Ahrenkiel R. K.
Measurement of AlGaAs/AlGaAs interface recombination velocities using time‐resolved photoluminescence
64.
Ahrenkiel R. K.; Olson J. M.; Dunlavy D. J.; Keyes B. M.; Kibbler A. E.
Recombination velocity of the Ga0.5In0.5P/GaAs interface
65.
Keyes B. M.; Dunlavy D. J.; Ahrenkiel R. K.; Asher S. E.; Partain L. D.; Liu D. D.; Kuryla M. S.
Minority carrier diffusion length of p‐GaAs determined by time‐of‐flight
66.
Hanak Thomas R.; Ahrenkiel Richard K.; Dunlavy Donald J.; Bakry Assem M.; Timmons Michael L.
A new method to analyze multiexponential transients for deep‐level transient spectroscopy
67.
Ahrenkiel R. K.; Al-Jassim M. M.; Keyes B.; Dunlavy D.; Jones K. M.; Vernon S. M.; Dixon T. M.
Minority Carrier Lifetime of GaAs on Silicon
68.
Olson J. M.; Ahrenkiel R. K.; Dunlavy D. J.; Keyes Brian; Kibbler A. E.
Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
69.
Ahrenkiel R. K.; Keyes Brian; Vernon S. M.; Dunlavy D. J.; Dixon T. M.; Tobin S. P.; Miller K. L.; Hayes R. E.
Ultralong minority‐carrier lifetime epitaxial GaAs by photon recycling
70.
Ahrenkiel R. K.; Dunlavy D. J.
Minority‐carrier lifetime in Al;xGa1-;xAs
71.
Timmons M. L.; Ahrenkiel R. K.; Al-Jassim M. M.; Dunlavy D. J.
Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy
72.
Hanak Thomas; Ahrenkiel R. K.
Measurement of electron diffusion lengths in ITO/p‐InP by surface photocurrents
73.
Ahrenkiel R. K.; Dunlavy D. J.; Hanak T.
Minority‐carrier lifetime in ITO/InP heterojunctions
74.
Ahrenkiel R. K.; Dunlavy D. J.; Benner J.; Gale R. P.; McClelland R. W.; Gormley J. V.; King B. D.
Minority‐carrier lifetime in GaAs thin films
75.
Ahrenkiel R. K.; Al-Jassim M. M.; Dunlavy D. J.; Jones K. M.; Vernon S. M.; Tobin S. P.; Haven V. E.
Minority‐carrier properties of GaAs on silicon
76.
Ahrenkiel R. K.; Dunlavy D. J.; Loo R. Y.; Kamath G. S.
Minority‐carrier lifetime in ;n‐Al;0.38Ga0.62As
77.
Influence of junctions on photoluminescence decay in thin‐film devices
78.
Ahrenkiel R. K.; Dunlavy D. J.; Greenberg D.; Schlupmann J.; Hamaker H. C.; MacMillan H. F.
Electron mobility in p‐GaAs by time of flight
79.
Ahrenkiel R. K.; Dunlavy D. J.; Hamaker H. C.; Green R. T.; Lewis C. R.; Hayes R. E.; Fardi H.
Time‐of‐flight studies of minority‐carrier diffusion in Al;xGa1-;xAs homojunctions
80.
Photocapacitance of CdZnS/CuInSe2 thin‐film heterojunctions
81.
Ahrenkiel R. K.; Matson R. J.; Osterwald C. R.; Dunlavy D. J.; Kazmerski L. L.
Minority‐carrier diffusion and recombination in CdZnS/CuInSe;2 solar cells
82.
Ahrenkiel R. K.; Matson R. J.
Transit time studies of junction location in thin‐film solar cells
83.
Kazmerski L. L.; Ireland P. J.; Osterwald C. R.; Dick J. R.; Massopust T. P.; Matson R. J.; Ahrenkiel R. K.; Jones K. M.
Properties of interfaces in (CdZn)S/CuInSe2 heterojunctions
84.
Ahrenkiel R. K.; Sheldon P.; Dunlavy D.; Roybal L.; Hayes R. E.
Surface compensation of p‐InP as observed by capacitance dispersion
85.
Ahrenkiel Richard K.; Kazmerski L. L.; Matson R. J.; Osterwald C.; Massopust T. P.; Mickelsen R. A.; Chen W. S.
Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells
86.
Ireland P. J.; Stanchina W.; Russell P. E.; Ahrenkiel R. K.; Kazmerski L. L.; Jamjoum O.; Wager J. F.
Surface and interface analysis of GaAs–oxyfluorides
87.
Sheldon P.; Russell P. E.; Ahrenkiel R. K.; Hayes R. E.
Summary Abstract: p‐InP surface modification due to indium tin oxide deposition
88.
Sheldon P.; Ahrenkiel R. K.; Hayes R. E.; Russell P. E.
Interfacial properties of indium tin oxide/indium phosphide devices
89.
Ahrenkiel R. K.; Pattillo S.; Wagner R. S.; Dunlavy D.; Russell P. E.; Jamjoum O.; Ireland P. J.; Kazmerski L. L.; Jervis T.
Reduction of surface states on GaAs by the plasma growth of oxyfluorides
90.
Russell P. E.; Jamjoum O.; Ahrenkiel R. K.; Kazmerski L. L.; Mickelsen R. A.; Chen W. S.
Properties of the Mo‐CuInSe;2 interface
91.
Ahrenkiel R. K.; Wagner R. S.; Pattillo S.; Dunlavy D.; Jervis T.; Kazmerski L. L.; Ireland P. J.
Reduction of fast surface states on p‐type GaAs
24
Keyes, Brian
12
Johnston, Steven W.
10
Wanlass, Mark W.
9
Levi, Dean
8
Kazmerski, LL
7
Metzger, Wyatt K.
6
Carapella, JJ
Melloch, Michael R.
Friedman, Daniel J.
5
Vernon, SM
Russell, Phillip
Johnston, Steve
Ellingson, Randy J.
4
Ahrenkiel, SP
Venkatasubramanian, Rama