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Ahrenkiel, RK

Computed

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Research Profile

Latest Publications

1.
2010

Johnston Steve; Unold Thomas; Repins Ingrid; Sundaramoorthy Rajalakshmi; Jones Kim M.; To Bobby; Call Nathan; Ahrenkiel Richard

Imaging characterization techniques applied to Cu(In,Ga)Se2 solar cells
J. Vac. Sci. Technol. A 28, 665 (2010)
National Renewable Energy Laboratory, Golden, Colorado 80401
2.
2008

Ahrenkiel R. K.; Johnston S. W.

Interaction of microwaves with photoelectrons in semiconductors
J. Vac. Sci. Technol. B 26, 1508 (2008)
Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 and National Renewable Energy Laboratory, Golden, Colorado 80401
3.
2008

Ahrenkiel R. K.

Photoconductive analysis of ion implantation damage and annealing in silicon wafers
J. Vac. Sci. Technol. A 26, 812 (2008)
Department of Metallurgical and Materials Engineering, Colorado School of Mines and National Renewable Energy Laboratory, Golden, Colorado 80401

Curriculum Vitae

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All Publications

1.
2010

Johnston Steve; Unold Thomas; Repins Ingrid; Sundaramoorthy Rajalakshmi; Jones Kim M.; To Bobby; Call Nathan; Ahrenkiel Richard

Imaging characterization techniques applied to Cu(In,Ga)Se2 solar cells
J. Vac. Sci. Technol. A 28, 665 (2010)
National Renewable Energy Laboratory, Golden, Colorado 80401
2.
2008

Ahrenkiel R. K.; Johnston S. W.

Interaction of microwaves with photoelectrons in semiconductors
J. Vac. Sci. Technol. B 26, 1508 (2008)
Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 and National Renewable Energy Laboratory, Golden, Colorado 80401
3.
2008

Ahrenkiel R. K.

Photoconductive analysis of ion implantation damage and annealing in silicon wafers
J. Vac. Sci. Technol. A 26, 812 (2008)
Department of Metallurgical and Materials Engineering, Colorado School of Mines and National Renewable Energy Laboratory, Golden, Colorado 80401
4.
2006

Luther J. M.; Kurtz S. R.; Johnston S. W.; Ahrenkiel R. K.; Collins R. T.

Temperature-dependent dark current measurements in GaAsN heterojunction diodes
Appl. Phys. Lett. 88, 263502 (2006)
National Renewable Energy Laboratory, Golden, Colorado 80401
5.
2005

Hudait M. K.; Lin Y.; Goss S. H.; Smith P.; Bradley S.; Brillson L. J.; Johnston S. W.; Ahrenkiel R. K.; Ringel S. A.

Evidence of interface-induced persistent photoconductivity in InP/;In0.53Ga0.47As/;InP double heterostructures grown by molecular-beam epitaxy
Appl. Phys. Lett. 87, 032106 (2005)
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210
6.
2005

Johnston S. W.; Kurtz S. R.; Friedman D. J.; Ptak A. J.; Ahrenkiel R. K.; Crandall R. S.

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement
Appl. Phys. Lett. 86, 072109 (2005)
National Renewable Energy Laboratory, Golden, Colorado 80401
7.
2005

Lin Y.; Hudait M. K.; Johnston S. W.; Ahrenkiel R. K.; Ringel S. A.

Photoconductivity decay in metamorphic InAsP/;InGaAs double heterostructures grown on InAsyP1-y; compositionally step-graded buffers
Appl. Phys. Lett. 86, 071908 (2005)
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210
8.
2005

Metzger W. K.; Dashdorj J.; Ahrenkiel R. K.; Friedman D. J.

Analysis of charge separation dynamics in a semiconductor junction
Phys. Rev. B 71, 035301 (2005)
National Renewable Energy Laboratory, Golden, Colorado 80401, USA
9.
2004

Wanlass M. W.; Ahrenkiel S. P.; Ahrenkiel R. K.; Carapella J. J.; Wehrer R. J.; Wernsman B.

Recent Advances in Low‐Bandgap, InP‐Based GaInAs/InAsP Materials and Devices for Thermophotovoltaic (TPV) Energy Conversion
AIP Conf. Proc. 738, 427 (2004)
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO;
10.
2004

Ahrenkiel R. K.; Metzger W.; Friedman D. F.

Transport properties of ordered-GalnP/;GaAs heterostructures
Appl. Phys. Lett. 85, 1733 (2004)
National Renewable Energy Laboratory, Golden, Colorado 80401
11.
2004

Ahrenkiel R. K.; Dashdorj J.

Interface recombination velocity measurement by a contactless microwave technique
J. Vac. Sci. Technol. B 22, 2063 (2004)
National Renewable Energy Laboratory, Golden, Colorado 80401;
12.
2003

Metzger W. K.; Wanlass M. W.; Ellingson R. J.; Ahrenkiel R. K.; Carapella J. J.

Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. ;79, 3272 (2001)]
Appl. Phys. Lett. 83, 4062 (2003)
National Renewable Energy Laboratory, Golden, Colorado 80401;
13.
2003

Johnston S. W.; Tu C. W.; Ahrenkiel R. K.; Hong Y. G.

Measurement of charge-separation potentials in GaAs1-x;Nx
J. Vac. Sci. Technol. A 21, 1765 (2003)
National Renewable Energy Laboratory, Golden, Colorado 80401;
14.
2003

Metzger W. K.; Albin D.; Levi D.; Sheldon P.; Li X.; Keyes B. M.; Ahrenkiel R. K.

Time-resolved photoluminescence studies of CdTe solar cells
J. Appl. Phys. 94, 3549 (2003)
National Renewable Energy Laboratory, Golden, Colorado 80401;
15.
2003

Balcioglu A.; Ahrenkiel R. K.; Friedman D. J.

Effects of oxygen contamination on diffusion length in p⁺-n; GaInNAs solar cells
J. Appl. Phys. 93, 3635 (2003)
National Renewable Energy Laboratory, Golden, Colorado 80401
16.
2002

Metzger W. K.; Wanlass M. W.; Gedvilas L. M.; Verley J. C.; Carapella J. J.; Ahrenkiel R. K.

Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP
J. Appl. Phys. 92, 3524 (2002)
National Renewable Energy Laboratory, Golden, Colorado 80401
17.
2001

Metzger W. K.; Wanlass M. W.; Ellingson R. J.; Ahrenkiel R. K.; Carapella J. J.

Auger recombination in low-band-gap n-type InGaAs
Appl. Phys. Lett. 79, 3272 (2001)
National Renewable Energy Laboratory, Golden, Colorado 80401;
18.
2001

Ahrenkiel R. K.; Ellingson R.; Metzger W.; Lubyshev D. I.; Liu W. K.

Auger recombination in heavily carbon-doped GaAs
Appl. Phys. Lett. 78, 1879 (2001)
National Renewable Energy Laboratory, Golden, Colorado 80401;
19.
2001

Ahrenkiel R. K.; Johnston S. W.; Webb J. D.; Gedvilas L. M.; Carapella J. J.; Wanlass M. W.

Recombination lifetimes in undoped, low-band gap InAsyP1-y;/InxGa1-x;As double heterostructures grown on InP substrates
Appl. Phys. Lett. 78, 1092 (2001)
National Renewable Energy Laboratory, Golden, Colorado 80401;
20.
2001

Ahrenkiel R. K.; Johnston S. W.; Keyes B. M.; Friedman D. J.; Vernon S. M.

Erratum: “Transport properties of ;GaAs1-x;Nx thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. ;77, 3794 (2000)]
Appl. Phys. Lett. 78, 559 (2001)
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, Colorado 80401
21.
2000

Balcioglu A.; Ahrenkiel R. K.; Hasoon F.

Deep-level impurities in CdTe/CdS thin-film solar cells
J. Appl. Phys. 88, 7175 (2000)
National Renewable Energy Laboratory, Golden, Colorado 80401;
22.
2000

Ahrenkiel R. K.; Johnston S. W.; Keyes B. M.; Friedman D. J.; Vernon S. M.

Transport properties of GaAs1-x;Nx thin films grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 77, 3794 (2000)
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, Colorado 80401;
23.
2000

Balcioglu A.; Ahrenkiel R. K.; Friedman D. J.

Evidence of an oxygen recombination center in p⁺–n; GaInNAs solar cells
Appl. Phys. Lett. 76, 2397 (2000)
National Renewable Energy Laboratory, Golden, Colorado 80401;
24.
1999

Bose D. N.; Ahrenkiel R. K.; Bhunia S.

Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe
J. Appl. Phys. 86, 6599 (1999)
Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India;
25.
1999

Ahrenkiel S. P.; Johnston S. W.; Ahrenkiel R. K.; Arent D. J.; Hanna M. C.; Wanlass M. W.

Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As
Appl. Phys. Lett. 74, 3534 (1999)
National Renewable Energy Laboratory, Golden, Colorado 80401;
26.
1999

Ahrenkiel R. K.; Ellingson R.; Johnston S.; Webb J.; Carapella J.; Wanlass M.

Recombination lifetime of InxGa1-x;As alloys used in thermophotovoltaic converters
AIP Conf. Proc. 460, 282 (1999)
National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401;
27.
1999

Johnston S. W.; Ahrenkiel R. K.

Measurement of the temperature-dependent recombination lifetimes in photovoltaic materials
AIP Conf. Proc. 462, 505 (1999)
Materials Science Program, Colorado School of Mines, Golden, Colorado 80401;
28.
1999

Woods L. M.; Levi D. H.; Kaydanov V.; Robinson G. Y.; Ahrenkiel R. K.

Electrical characterization of etched grain-boundary properties from as-processed px-CdTe-based solar cells
AIP Conf. Proc. 462, 499 (1999)
Colorado State University, Ft. Collins, Colorado 80523;
29.
1999

Ahrenkiel R. K.; Johnston S. W.

Large-signal injection-level spectroscopy of impurities in silicon
AIP Conf. Proc. 462, 483 (1999)
National Renewable Energy Laboratory, Golden, Colorado 80401;
30.
1999

Song W.; Mao D.; Kaydanov V.; Ohno T. R.; Trefny J. U.; Ahrenkiel R. K.; Levi D. H.; Johnston S.; McCandless B. E.

Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance
AIP Conf. Proc. 462, 194 (1999)
Department of Physics, Colorado School of Mines, Golden, Colorado 80401;
31.
1999

Song W.; Mao D.; Trefny J. U.; Ahrenkiel R. K.; Levi D. H.; Johnston S.

Influence of CdCl2 treatment on the electrical and optical properties of CdS thin film
AIP Conf. Proc. 462, 188 (1999)
Department of Physics, Colorado School of Mines, Golden, Colorado 80401;
32.
1998

Ahrenkiel R. K.; Ellingson R.; Johnston S.; Wanlass M.

Recombination lifetime of In0.53Ga0.47As as a function of doping density
Appl. Phys. Lett. 72, 3470 (1998)
National Renewable Energy Laboratory, Golden, Colorado 80401;
33.
1997

Keyes B. M.; Ahrenkiel R. K.; Shaw G. J.; Summers G. P.

Minority-carrier lifetime damage coefficient of irradiated InP
J. Appl. Phys. 82, 2156 (1997)
National Renewable Energy Laboratory, Golden, Colorado 80401
34.
1997

Venkatasubramanian Rama; Siivola Edward; O'Quinn Brooks; Keyes Brian; Ahrenkiel Richard

Pathways to high-efficiency GaAs solar cells on low-cost substrates
AIP Conf. Proc. 404, 411 (1997)
Research Triangle Institute, RTP, North Carolina 27709;
35.
1997

Ahrenkiel R. K.

Carrier recombination in silicon materials used for photovoltaic devices
AIP Conf. Proc. 394, 225 (1997)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
36.
1997

Ahrenkiel R. K.; Ahrenkiel S. P.; Arent D. J.; Olson J. M.

Carrier transport in ordered and disordered In0.53Ga0.47As
Appl. Phys. Lett. 70, 756 (1997)
National Renewable Energy Laboratory, Golden, Colorado 80401
37.
1996

Ahrenkiel R. K.; Ahrenkiel S. P.; Arent D. J.

Recombination lifetime in ordered and disordered InGaAs
AIP Conf. Proc. 358, 434 (1996)
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
38.
1996

Venkatasubramanian R.; O'Quinn B.; Hills J.; Malta D.; Timmons M. L.; Hutchby J. A.; Ahrenkiel R.; Keyes B. M.

Development of high‐efficiency GaAs solar cells on polycrystalline Ge substrates
AIP Conf. Proc. 353, 558 (1996)
Research Triangle Institute, Research Triangle Park, North Carolina 27709
39.
1996

Levi D. H.; Moutinho H. R.; Hasoon F. S.; Ahrenkiel R. K.; Kazmerski L. L.; Al-Jassim M. M.

Correlations of electro‐optical and nanostructural properties of CdTe thin films
AIP Conf. Proc. 353, 400 (1996)
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401
40.
1996

Ahrenkiel R. K.

Ultra‐high frequency photoconductive decay for measuring recombination lifetime in silicon
AIP Conf. Proc. 353, 161 (1996)
National Renewable Energy Laboratory, Golden, Colorado 80401
41.
1995

Ahrenkiel R. K.; Wangensteen T.; Al-Jassim M. M.; Wanlass M.; Coutts T.

Recombination lifetime of InxGa1-;xAs ternary alloys
AIP Conf. Proc. 321, 412 (1995)
National Renewable Energy Laboratories, Golden, Colorado
42.
1994

Rosenwaks Y.; Thacker B. R.; Ahrenkiel R. K.; Nozik A. J.; Yavneh I.

Photogenerated carrier dynamics under the influence of electric fields in III‐V semiconductors
Phys. Rev. B 50, 1746 (1994)
National Renewable Energy Laboratory, Golden, Colorado 80401
43.
1994

Ahrenkiel R. K.; Keyes B. M.; Levi D. L.; Emery K.; Chu T. L.; Chu S. S.

Spatial uniformity of minority‐carrier lifetime in polycrystalline CdTe solar cells
Appl. Phys. Lett. 64, 2879 (1994)
National Renewable Energy Laboratory, Golden, Colorado 80401
44.
1994

Keyes B. M.; Dunlavy D. J.; Ahrenkiel R. K.; Shaw G.; Summers G. P.; Tzafaras N.; Lentz C.

Time‐resolved photoluminescence of undoped InP
J. Appl. Phys. 75, 4249 (1994)
National Renewable Energy Laboratory, Golden, Colorado 80401
45.
1993

Rosenwaks Y.; Hanna M. C.; Levi D. H.; Szmyd D. M.; Ahrenkiel R. K.; Nozik A. J.

Hot‐carrier cooling in GaAs; Quantum wells versus bulk
Phys. Rev. B 48, 14675 (1993)
National Renewable Energy Laboratory, Golden, Colorado 80401
46.
1993

Webb J. D.; Dunlavy D. J.; Ciszek T.; Ahrenkiel R. K.; Wanlass M. W.; Noufi R.; Vernon S. M.

Room‐temperature measurement of photoluminescence spectra of semiconductors using an FT‐Raman spectrophotometer
Appl. Spectrosc. 47, 1814 (1993)
National Renewable Energy Laboratory, Golden, Colorado 80401
47.
1993

Zhang J.; Keyes B. M.; Asher S. E.; Ahrenkiel R. K.; Timmons M. L.

Giant recombination centers in Al0.10Ga0.90As grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 63, 1369 (1993)
National Renewable Energy Laboratory, Golden, Colorado 80401
48.
1993

Sheldon P.; Keyes B. M.; Ahrenkiel R. K.; Asher S. E.

Minority carrier lifetimes in molecular beam epitaxy grown AlxGa1-;xAs/GaAs double heterostructures doped with aluminum
J. Vac. Sci. Technol. A 11, 1011 (1993)
National Renewable Energy Laboratory, Golden, Colorado 80401
49.
1992

Lundstrom M. S.; Melloch M. R.; Lush G. B.; Patkar M. P.; Young M.; Durbin S. M.; Gray J. L.; MacMillan H. F.; Keyes B. M.; Levi D. H.; Ahrenkiel R. K.

Radiative recombination and photon recycling in gallium arsenide solar cells
AIP Conf. Proc. 268, 298 (1992)
Purdue University, School of Electrical Engineering, West Lafayette, Indiana
50.
1992

Keyes B. M.; Emery K. A.; Ahrenkiel R. K.

Minority‐carrier lifetime of compound semiconductors; Polycrystalline CdTe
AIP Conf. Proc. 268, 149 (1992)
National Renewable Energy Laboratory, Golden, Colorado 80401
51.
1992

Lovejoy M. L.; Melloch M. R.; Lundstrom M. S.; Ahrenkiel R. K.

Minority hole mobility in n+GaAs
Appl. Phys. Lett. 61, 2683 (1992)
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
52.
1992

Lush G. B.; Melloch M. R.; Lundstrom M. S.; Levi D. H.; Ahrenkiel R. K.; MacMillan H. F.

Microsecond lifetimes and low interface recombination velocities in moderately doped n‐GaAs thin films
Appl. Phys. Lett. 61, 2440 (1992)
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
53.
1992

Lovejoy M. L.; Melloch M. R.; Lundstrom M. S.; Keyes B. M.; Ahrenkiel R. K.; de Lyon T. J.; Woodall J. M.

Comparative study of minority electron properties in p+‐GaAs doped with beryllium and carbon
Appl. Phys. Lett. 61, 822 (1992)
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
54.
1992

Lush G. B.; MacMillan H. F.; Keyes B. M.; Levi D. H.; Melloch M. R.; Ahrenkiel R. K.; Lundstrom M. S.

A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition
J. Appl. Phys. 72, 1436 (1992)
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47901
55.
1992

Ahrenkiel R. K.; Lundstrom M. S.; Melloch M. R.; Lush G. B.; Keyes B. M.; MacMillan H. F.

Minority‐carrier lifetime and photon recycling in ;n‐GaAs
J. Vac. Sci. Technol. A 10, 990 (1992)
National Renewable Energy Laboratory (NREL), Golden, Colorado 80401
56.
1992

Zhang Jue; Sheldon P.; Ahrenkiel R. K.

A Hall probe technique for characterizing high‐temperature superconductors
Rev. Sci. Instrum. 63, 2259 (1992)
Department of Electrical and Computer Engineering, The University of Colorado, Boulder, Colorado 80309
57.
1992

Venkatasubramanian R.; Timmons M. L.; Humphreys T. P.; Keyes B. M.; Ahrenkiel R. K.

High‐quality eutectic‐metal‐bonded AlGaAs‐GaAs thin films on Si substrates
Appl. Phys. Lett. 60, 886 (1992)
Research Triangle Institute, Research Triangle Park, North Carolina 27709
58.
1991

Bhattacharya R. N.; Parilla P. A.; Mason A.; Roybal L. L.; Ahrenkiel R. K.; Noufi R.; Hellmer R. P.; Kwak J. F.; Ginley D. S.

TlBaCaCuO and YBaCuO superconductor thin films via an electrodeposition process
J. Mater. Res. 6, 1389 (1991)
Solar Energy Research Institute, Golden, Colorado 80401
59.
1991

Ahrenkiel R. K.; Keyes B. M.; Dunlavy D. J.

Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers
J. Appl. Phys. 70, 225 (1991)
Solar Energy Research Institute, Golden, Colorado 80401
60.
1991

Bhattacharya R. N.; Noufi R.; Roybal L. L.; Ahrenkiel R. K.

YBaCuO Superconductor Thin Films via an Electrodeposition Process
J. Electrochem. Soc. 138, 1643 (1991)
Solar Energy Research Institute, Golden, Colorado 80401
61.
1991

Ahrenkiel R. K.; Keyes B. M.; Shen T. C.; Chyi J. I.; Morkoc H.

Minority‐carrier lifetime in Al;xGa1-;xAs grown by molecular‐beam epitaxy
J. Appl. Phys. 69, 3094 (1991)
Solar Energy Research Institute, Golden, Colorado 80401
62.
1991

Hanak Thomas R.; Ahrenkiel Richard K.; Timmons Michael L.

Capture barrier and the ionization entropy of the DX center in Se‐doped Al;xGa1-;xAs
J. Appl. Phys. 69, 1425 (1991)
University of Denver, Department of Physics, University Park, Denver, Colorado 80210
63.
1990

Timmons M. L.; Dunlavy D. J.; Colpitts T. S.; Venkatasubramanian R.; Keyes B. M.; Ahrenkiel R. K.

Measurement of AlGaAs/AlGaAs interface recombination velocities using time‐resolved photoluminescence
Appl. Phys. Lett. 56, 1850 (1990)
Research Triangle Institute, Research Triangle Park, North Carolina 27709
64.
1990

Ahrenkiel R. K.; Olson J. M.; Dunlavy D. J.; Keyes B. M.; Kibbler A. E.

Recombination velocity of the Ga0.5In0.5P/GaAs interface
J. Vac. Sci. Technol. A 8, 3002 (1990)
Solar Energy Research Institute, Golden, Colorado 80401
65.
1990

Keyes B. M.; Dunlavy D. J.; Ahrenkiel R. K.; Asher S. E.; Partain L. D.; Liu D. D.; Kuryla M. S.

Minority carrier diffusion length of p‐GaAs determined by time‐of‐flight
J. Vac. Sci. Technol. A 8, 2004 (1990)
Solar Energy Research Institute, Golden, Colorado 80401
66.
1990

Hanak Thomas R.; Ahrenkiel Richard K.; Dunlavy Donald J.; Bakry Assem M.; Timmons Michael L.

A new method to analyze multiexponential transients for deep‐level transient spectroscopy
J. Appl. Phys. 67, 4126 (1990)
University of Denver, Department of Physics, University Park, Denver, Colorado 80210
67.
1990

Ahrenkiel R. K.; Al-Jassim M. M.; Keyes B.; Dunlavy D.; Jones K. M.; Vernon S. M.; Dixon T. M.

Minority Carrier Lifetime of GaAs on Silicon
J. Electrochem. Soc. 137, 996 (1990)
Solar Energy Research Institute, Golden, Colorado 80401
68.
1989

Olson J. M.; Ahrenkiel R. K.; Dunlavy D. J.; Keyes Brian; Kibbler A. E.

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
Appl. Phys. Lett. 55, 1208 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
69.
1989

Ahrenkiel R. K.; Keyes Brian; Vernon S. M.; Dunlavy D. J.; Dixon T. M.; Tobin S. P.; Miller K. L.; Hayes R. E.

Ultralong minority‐carrier lifetime epitaxial GaAs by photon recycling
Appl. Phys. Lett. 55, 1088 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
70.
1989

Ahrenkiel R. K.; Dunlavy D. J.

Minority‐carrier lifetime in Al;xGa1-;xAs
J. Vac. Sci. Technol. A 7, 822 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
71.
1988

Timmons M. L.; Ahrenkiel R. K.; Al-Jassim M. M.; Dunlavy D. J.

Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy
J. Appl. Phys. 64, 6259 (1988)
Research Triangle Institute, Research Triangle Park, North Carolina 27709
72.
1988

Hanak Thomas; Ahrenkiel R. K.

Measurement of electron diffusion lengths in ITO/p‐InP by surface photocurrents
J. Appl. Phys. 64, 3528 (1988)
Solar Energy Research Institute, Golden, Colorado 80401
73.
1988

Ahrenkiel R. K.; Dunlavy D. J.; Hanak T.

Minority‐carrier lifetime in ITO/InP heterojunctions
J. Appl. Phys. 64, 1916 (1988)
The Solar Energy Research Institute, Golden, Colorado 80401
74.
1988

Ahrenkiel R. K.; Dunlavy D. J.; Benner J.; Gale R. P.; McClelland R. W.; Gormley J. V.; King B. D.

Minority‐carrier lifetime in GaAs thin films
Appl. Phys. Lett. 53, 598 (1988)
The Solar Energy Research Institute, Golden, Colorado 80401
75.
1988

Ahrenkiel R. K.; Al-Jassim M. M.; Dunlavy D. J.; Jones K. M.; Vernon S. M.; Tobin S. P.; Haven V. E.

Minority‐carrier properties of GaAs on silicon
Appl. Phys. Lett. 53, 222 (1988)
Solar Energy Research Institute, Golden, Colorado 80401
76.
1988

Ahrenkiel R. K.; Dunlavy D. J.; Loo R. Y.; Kamath G. S.

Minority‐carrier lifetime in ;n‐Al;0.38Ga0.62As
J. Appl. Phys. 63, 5174 (1988)
Solar Energy Research Institute, Golden, Colorado 80501
77.
1987

Ahrenkiel R. K.

Influence of junctions on photoluminescence decay in thin‐film devices
J. Appl. Phys. 62, 2937 (1987)
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401
78.
1987

Ahrenkiel R. K.; Dunlavy D. J.; Greenberg D.; Schlupmann J.; Hamaker H. C.; MacMillan H. F.

Electron mobility in p‐GaAs by time of flight
Appl. Phys. Lett. 51, 776 (1987)
Solar Energy Research Institute, Golden, Colorado 80401
79.
1986

Ahrenkiel R. K.; Dunlavy D. J.; Hamaker H. C.; Green R. T.; Lewis C. R.; Hayes R. E.; Fardi H.

Time‐of‐flight studies of minority‐carrier diffusion in Al;xGa1-;xAs homojunctions
Appl. Phys. Lett. 49, 725 (1986)
Solar Energy Research Institute, Golden, Colorado 80401
80.
1986

Ahrenkiel R. K.

Photocapacitance of CdZnS/CuInSe2 thin‐film heterojunctions
J. Appl. Phys. 59, 181 (1986)
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401
81.
1985

Ahrenkiel R. K.; Matson R. J.; Osterwald C. R.; Dunlavy D. J.; Kazmerski L. L.

Minority‐carrier diffusion and recombination in CdZnS/CuInSe;2 solar cells
J. Appl. Phys. 58, 1362 (1985)
Solar Energy Research Institute, 1617 Cole Blvd., Golden, Colorado 80401
82.
1985

Ahrenkiel R. K.; Matson R. J.

Transit time studies of junction location in thin‐film solar cells
Appl. Phys. Lett. 46, 877 (1985)
Solar Energy Research Institute, Golden, Colorado 80401
83.
1984

Kazmerski L. L.; Ireland P. J.; Osterwald C. R.; Dick J. R.; Massopust T. P.; Matson R. J.; Ahrenkiel R. K.; Jones K. M.

Properties of interfaces in (CdZn)S/CuInSe2 heterojunctions
J. Vac. Sci. Technol. A 2, 292 (1984)
Solar Energy Research Institute, Golden, Colorado 80401
84.
1983

Ahrenkiel R. K.; Sheldon P.; Dunlavy D.; Roybal L.; Hayes R. E.

Surface compensation of p‐InP as observed by capacitance dispersion
Appl. Phys. Lett. 43, 675 (1983)
Solar Energy Research Institute, Golden, Colorado 80401
85.
1983

Ahrenkiel Richard K.; Kazmerski L. L.; Matson R. J.; Osterwald C.; Massopust T. P.; Mickelsen R. A.; Chen W. S.

Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells
Appl. Phys. Lett. 43, 658 (1983)
Solar Energy Research Institute, Golden, Colorado 80401
86.
1983

Ireland P. J.; Stanchina W.; Russell P. E.; Ahrenkiel R. K.; Kazmerski L. L.; Jamjoum O.; Wager J. F.

Surface and interface analysis of GaAs–oxyfluorides
J. Vac. Sci. Technol. A 1, 653 (1983)
SERI, Golden, Colorado 80401
87.
1983

Sheldon P.; Russell P. E.; Ahrenkiel R. K.; Hayes R. E.

Summary Abstract: p‐InP surface modification due to indium tin oxide deposition
J. Vac. Sci. Technol. A 1, 618 (1983)
Solar Energy Research Institute, Photovoltaic Devices and Measurements Branch, Golden, Colorado 80401
88.
1982

Sheldon P.; Ahrenkiel R. K.; Hayes R. E.; Russell P. E.

Interfacial properties of indium tin oxide/indium phosphide devices
Appl. Phys. Lett. 41, 727 (1982)
Solar Energy Research Institute, Photovoltaic Devices and Measurements Branch, 1617 Cole Boulevard, Golden, Colorado 80401
89.
1982

Ahrenkiel R. K.; Pattillo S.; Wagner R. S.; Dunlavy D.; Russell P. E.; Jamjoum O.; Ireland P. J.; Kazmerski L. L.; Jervis T.

Reduction of surface states on GaAs by the plasma growth of oxyfluorides
J. Vac. Sci. Technol. 21, 434 (1982)
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401
90.
1982

Russell P. E.; Jamjoum O.; Ahrenkiel R. K.; Kazmerski L. L.; Mickelsen R. A.; Chen W. S.

Properties of the Mo‐CuInSe;2 interface
Appl. Phys. Lett. 40, 995 (1982)
Solar Energy Research Institute, Solar Electric Conversion Research Division, 1617 Cole Boulevard, Golden, Colorado 80401
91.
1982

Ahrenkiel R. K.; Wagner R. S.; Pattillo S.; Dunlavy D.; Jervis T.; Kazmerski L. L.; Ireland P. J.

Reduction of fast surface states on p‐type GaAs
Appl. Phys. Lett. 40, 700 (1982)
Los Alamos National Laboratory, Los Alamos, New Mexico 87545

Co-authors

Co-publications
24

Keyes, Brian
12

Johnston, Steven W.
10

Wanlass, Mark W.
9

Levi, Dean
8

Kazmerski, LL
7

Metzger, Wyatt K.
6

Carapella, JJ
6

Melloch, Michael R.
6

Friedman, Daniel J.
5

Vernon, SM
5

Russell, Phillip
5

Johnston, Steve
5

Ellingson, Randy J.
4

Ahrenkiel, SP
4

Venkatasubramanian, Rama