Public Profile Preview - Sign Up Free for Full Details

Sign Up Free and Explore the Exciting World of AIP UniPHY

More than 275,000 Profiles
Over 1,000 Organizations worldwide
State ot the Art Network Visualizations
Manage your own Profile

Locate Researchers in your Country
Locate Researchers in your Network
Connect to Researchers Worldwide

Learn More >

Zhao, BH

Computed

Bookmark

Research Profile

Latest Publications

1.
2011

Zhang J.; Li X. F.; Lu J. G.; Ye Z. Z.; Gong L.; Wu P.; Huang J.; Zhang Y. Z.; Chen L. X.; Zhao B. H.

Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure
J. Appl. Phys. 110, 084509 (2011)
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
2.
2009

Qiu M. X.; Gu X. Q.; Ye Z. Z.; Lu J. G.; He H. P.; Zhang Y. Z.; Zhao B. H.

p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films
J. Vac. Sci. Technol. B 27, 1897 (2009)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
3.
2009

Xu W. Z.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Zhao B. H.; Jiang L.; Lu J. G.; He H. P.; Zhang S. B.

Erratum: “ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition” [Appl. Phys. Lett. ;88, 173506 (2006)]
Appl. Phys. Lett. 94, 169901 (2009)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China

Curriculum Vitae

Times & Places

GeoNetwork View

Flash Player Required

All Publications

1.
2011

Zhang J.; Li X. F.; Lu J. G.; Ye Z. Z.; Gong L.; Wu P.; Huang J.; Zhang Y. Z.; Chen L. X.; Zhao B. H.

Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure
J. Appl. Phys. 110, 084509 (2011)
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
2.
2009

Qiu M. X.; Gu X. Q.; Ye Z. Z.; Lu J. G.; He H. P.; Zhang Y. Z.; Zhao B. H.

p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films
J. Vac. Sci. Technol. B 27, 1897 (2009)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
3.
2009

Xu W. Z.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Zhao B. H.; Jiang L.; Lu J. G.; He H. P.; Zhang S. B.

Erratum: “ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition” [Appl. Phys. Lett. ;88, 173506 (2006)]
Appl. Phys. Lett. 94, 169901 (2009)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
4.
2009

Lu Y. F.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Huang J. Y.; Zhao B. H.

Formation Mechanisms of Low-Resistivity Ni/;Pt Ohmic Contacts to Li-Doped p-Type ZnO
Electrochem. Solid-State Lett. 12, H60 (2009)
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
5.
2008

Zhang Y. Z.; He H. P.; Jin Y. Z.; Zhao B. H.; Ye Z. Z.; Tang H. P.

Reduced bound exciton and surface exciton emissions in Al-doped ZnO nanorods exposed to ambient air
J. Appl. Phys. 104, 103529 (2008)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
6.
2008

Lu Y. F.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Zhao B. H.

Ni/Au Ohmic Contacts to p-Type N-Doped ZnO
Electrochem. Solid-State Lett. 11, H185 (2008)
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
7.
2008

Ye Z. Z.; Chen L. L.; Zhao B. H.; He H. P.

Photoluminescence in heavily doped ZnO:N:In films
Appl. Phys. Lett. 92, 231913 (2008)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
8.
2008

Pan X. H.; Jiang J.; Zeng Y. J.; He H. P.; Zhu L. P.; Ye Z. Z.; Zhao B. H.; Pan X. Q.

Electrical and optical properties of phosphorus-doped p-type ZnO films grown by metalorganic chemical vapor deposition
J. Appl. Phys. 103, 023708 (2008)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
9.
2007

Ye Z. Z.; Lu J. G.; Zhang Y. Z.; Zeng Y. J.; Chen L. L.; Zhuge F.; Yuan G. D.; He H. P.; Zhu L. P.; Huang J. Y.; Zhao B. H.

ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
Appl. Phys. Lett. 91, 113503 (2007)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
10.
2007

Ye Z. Z.; Zeng Y. J.; Lu Y. F.; Lin S. S.; Sun L.; Zhu L. P.; Zhao B. H.

Donor/acceptor doping and electrical tailoring in ZnO quantum dots
Appl. Phys. Lett. 91, 112110 (2007)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
11.
2007

He H. P.; Ye Z. Z.; Lin S. S.; Tang H. P.; Zhang Y. Z.; Zhu L. P.; Huang J. Y.; Zhao B. H.

Determination of the free exciton energy in ZnO nanorods from photoluminescence excitation spectroscopy
J. Appl. Phys. 102, 013511 (2007)
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China;
12.
2007

Qiu M. X.; Ye Z. Z.; He H. P.; Zhang Y. Z.; Gu X. Q.; Zhu L. P.; Zhao B. H.

Effect of Mg content on structural, electrical, and optical properties of Li-doped Zn1-x;MgxO thin films
Appl. Phys. Lett. 90, 182116 (2007)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
13.
2007

Lu J. G.; Fujita S.; Kawaharamura T.; Nishinaka H.; Kamada Y.; Ohshima T.; Ye Z. Z.; Zeng Y. J.; Zhang Y. Z.; Zhu L. P.; He H. P.; Zhao B. H.

Carrier concentration dependence of band gap shift in n-type ZnO:Al films
J. Appl. Phys. 101, 083705 (2007)
International Innovation Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
14.
2007

He H. P.; Tang H. P.; Ye Z. Z.; Zhu L. P.; Zhao B. H.; Wang L.; Li X. H.

Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods
Appl. Phys. Lett. 90, 023104 (2007)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s. Republic of China;
15.
2007

Zeng Y. J.; Ye Z. Z.; Lu Y. F.; Lu J. G.; Sun L.; Xu W. Z.; Zhu L. P.; Zhao B. H.; Che Y.

ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition
Appl. Phys. Lett. 90, 012111 (2007)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
16.
2006

Lu J. G.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Wang L.; Yuan J.; Zhao B. H.; Liang Q. L.

Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions
J. Appl. Phys. 100, 073714 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
17.
2006

Zeng Y. J.; Ye Z. Z.; Lu J. G.; Xu W. Z.; Zhu L. P.; Zhao B. H.; Limpijumnong Sukit

Erratum: “Identification of acceptor states in ;Li-doped p-type ZnO thin films” [Appl. Phys. Lett. ;89, 042106 (2006)]
Appl. Phys. Lett. 89, 129901 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
18.
2006

Lu J. G.; Zhang Y. Z.; Ye Z. Z.; Zeng Y. J.; He H. P.; Zhu L. P.; Huang J. Y.; Wang L.; Yuan J.; Zhao B. H.; Li X. H.

Control of p- and n-type conductivities in Li-doped ZnO thin films
Appl. Phys. Lett. 89, 112113 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
19.
2006

Lu J. G.; Ye Z. Z.; Yuan G. D.; Zeng Y. J.; Zhuge F.; Zhu L. P.; Zhao B. H.; Zhang S. B.

Electrical characterization of ZnO-based homojunctions
Appl. Phys. Lett. 89, 053501 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
20.
2006

Zeng Y. J.; Ye Z. Z.; Lu J. G.; Xu W. Z.; Zhu L. P.; Zhao B. H.; Limpijumnong Sukit

Identification of acceptor states in Li-doped p-type ZnO thin films
Appl. Phys. Lett. 89, 042106 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
21.
2006

Zeng Y. J.; Ye Z. Z.; Xu W. Z.; Lu J. G.; He H. P.; Zhu L. P.; Zhao B. H.; Che Y.; Zhang S. B.

p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
Appl. Phys. Lett. 88, 262103 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
22.
2006

Lu J. G.; Zhang Y. Z.; Ye Z. Z.; Zhu L. P.; Wang L.; Zhao B. H.; Liang Q. L.

Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method
Appl. Phys. Lett. 88, 222114 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
23.
2006

Xu W. Z.; Ye Z. Z.; Zeng Y. J.; Zhu L. P.; Zhao B. H.; Jiang L.; Lu J. G.; He H. P.; Zhang S. B.

ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition
Appl. Phys. Lett. 88, 173506 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
24.
2006

Lu J. G.; Ye Z. Z.; Huang J. Y.; Zhu L. P.; Zhao B. H.; Wang Z. L.; Fujita Sz.

ZnO quantum dots synthesized by a vapor phase transport process
Appl. Phys. Lett. 88, 063110 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
25.
2006

Zeng Y. J.; Ye Z. Z.; Xu W. Z.; Li D. Y.; Lu J. G.; Zhu L. P.; Zhao B. H.

Dopant source choice for formation of p-type ZnO: Li acceptor
Appl. Phys. Lett. 88, 062107 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
26.
2006

He H. P.; Zhuge F.; Ye Z. Z.; Zhu L. P.; Wang F. Z.; Zhao B. H.; Huang J. Y.

Strain and its effect on optical properties of Al-N codoped ZnO films
J. Appl. Phys. 99, 023503 (2006)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
27.
2005

Chen L. L.; Lu J. G.; Ye Z. Z.; Lin Y. M.; Zhao B. H.; Ye Y. M.; Li J. S.; Zhu L. P.

p-type behavior in In–N codoped ZnO thin films
Appl. Phys. Lett. 87, 252106 (2005)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
28.
2005

Xu W. Z.; Ye Z. Z.; Ma D. W.; Lu H. M.; Zhu L. P.; Zhao B. H.; Yang X. D.; Xu Z. Y.

Quasi-aligned ZnO nanotubes grown on Si substrates
Appl. Phys. Lett. 87, 093110 (2005)
State Key laboratory of Silicon Materials, Zhejiang University Hangzhou 310027, People’s Republic of China;
29.
2005

Yuan G. D.; Ye Z. Z.; Zhu L. P.; Qian Q.; Zhao B. H.; Fan R. X.; Perkins Craig L.; Zhang S. B.

Control of conduction type in Al- and N-codoped ZnO thin films
Appl. Phys. Lett. 86, 202106 (2005)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;
30.
2004

Lu J. G.; Ye Z. Z.; Zhuge F.; Zeng Y. J.; Zhao B. H.; Zhu L. P.

p-type conduction in N–;Al co-doped ZnO thin films
Appl. Phys. Lett. 85, 3134 (2004)
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China;

Co-authors

Co-publications
30

Ye, ZZ
26

Zhu, LP
18

Lu, JG
17

Zeng, YJ
14

He, HP
9

Zhang, YZ
8

Xu, WZ
6

Huang, JY
5

Zhang, SB
4

Wang, Lei
4

Zhuge, F
4

Lu, YF
3

Yuan, GD
3

Tang, HP
3

Chen, LL