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Photoelectric conversion: sol...
Amorphous semiconductors; gla...
Photoconduction and photovolt...
Disordered solids
Chemical vapor deposition
Elemental semiconductors
Elemental semiconductors and ...
Thin film structure and morph...
Amorphous semiconductors
Plasma-based ion implantation...
Surface double layers, Schott...
Amorphous semiconductors, met...
Polarimeters and ellipsometers
Disordered structures; amorph...
Other inorganic semiconductors
Metal-nonmetal contacts
Etching and cleaning
1.
Yoon Heayoung P.; Barber Greg D.; Podraza Nikolas J.; Redwing Joan M.; Mallouk Thomas E.; Wronski Christopher R.; Yuwen Yu A.; Kendrick Chito E.; Mayer Theresa S.
Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths
2.
Podraza N. J.; Li Jing; Dickey E. C.; Wronski C. R.; Collins R. W.
Analysis of controlled mixed-phase (amorphous+microcrystalline) silicon thin films by real time spectroscopic ellipsometry
3.
Pearce J. M.; Podraza N.; Collins R. W.; Al-Jassim M. M.; Jones K. M.; Deng J.; Wronski C. R.
Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous+nanocrystalline)p-type contacts of low nanocrystalline content
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4.
Deng J.; Wronski C. R.
Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a‐;Si;H solar cells
5.
Pearce J. M.; Deng J.; Collins R. W.; Wronski C. R.
Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge
6.
Deng J.; Pearce J. M.; Koval R. J.; Vlahos V.; Collins R. W.; Wronski C. R.
Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on ;p–;i–;n and n–;i–;p solar cells
7.
Ferlauto A. S.; Ferreira G. M.; Pearce J. M.; Wronski C. R.; Collins R. W.; Deng Xunming; Ganguly Gautam
Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics
8.
Koval R. J.; Chen Chi; Ferreira G. M.; Ferlauto A. S.; Pearce J. M.; Rovira P. I.; Wronski C. R.; Collins R. W.
Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p; solar cells by incorporation of protocrystalline silicon p-type layers
9.
Ferlauto A. S.; Koval R. J.; Wronski C. R.; Collins R. W.
Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications
10.
Pearce Joshua M.; Koval Randy J.; Ferlauto Andre S.; Collins Robert W.; Wronski Christopher R.; Yang Jeffrey; Guha Subbhendu
Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
11.
Koh Joohyun; Ferlauto A. S.; Rovira P. I.; Wronski C. R.; Collins R. W.
Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane
12.
Koval Randy J.; Koh Joohyun; Lu Z.; Jiao L.; Collins R. W.; Wronski C. R.
Performance and stability of Si:H p–i–n; solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary
13.
Fujiwara H.; Koh Joohyun; Wronski C. R.; Collins R. W.
Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells
14.
Koh Joohyun; Fujiwara H.; Koval R. J.; Wronski C. R.; Collins R. W.
Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6,B(CH3)3 and BF3 dopant source gases
15.
Koh Joohyun; Lee Yeeheng; Fujiwara H.; Wronski C. R.; Collins R. W.
Optimization of hydrogenated amorphous silicon p–i–n; solar cells with two-step i layers guided by real-time spectroscopic ellipsometry
16.
Fujiwara H.; Wronski C. R.; Lee Yeeheng; Koh Joohyun; Collins R. W.
Real time spectroscopic ellipsometry characterization of structural and thermal equilibration of amorphous silicon–carbon alloy ;p layers in p-i-n solar cell fabrication
17.
Fujiwara H.; Koh Joohyun; Wronski C. R.; Collins R. W.; Burnham J. S.
Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution
18.
Jiao L.; Chen I.; Collins R. W.; Wronski C. R.; Hata N.
An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements
19.
Application of real time spectroscopic ellipsometry for high resolution depth profiling of compositionally graded amorphous silicon alloy thin films
20.
Güneş Mehmet; Wronski Christopher R.
Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films
21.
Jiao Lihong; Liu Hongyue; Semoushikina S.; Lee Yeeheng; Wronski C. R.
Initial, rapid light‐induced changes in hydrogenated amorphous silicon materials and solar cell structures; The effects of charged defects
22.
Koh Joohyun; Lu Yiwei; Wronski C. R.; Kuang Yalei; Collins R. W.; Tsong T. T.; Strausser Y. E.
Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films
23.
Kim Sangbo; Wronski C. R.; Jiao Lihong; Koh Joohyun; Burnham J. S.; Collins R. W.
Real time spectroellipsometry characterization of optical gap profiles in compositionally‐graded semiconductor structures; Applications to bandgap engineering in amorphous silicon‐carbon alloy solar cells
24.
Chen Ing-Shin; Jackson T. N.; Wronski C. R.
Characterization of semiconductor heterojunctions using internal photoemission
25.
Koh Joohyun; Lu Yiwei; Kim Sangbo; Burnham J. S.; Wronski C. R.; Collins R. W.
Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n; solar cells; Characterization of microstructural evolution and optical gaps
26.
Nguyen H. V.; An Ilsin; Collins R. W.; Lu Yiwei; Wakagi M.; Wronski C. R.
Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry
27.
Güneş Mehmet; Wronski Christopher R.; McMahon T. J.
Charged defect states in intrinsic hydrogenated amorphous silicon films
28.
Fortmann C. M.; Dawson R. M.; Liu H. Y.; Wronski C. R.
Charge‐defect thermodynamic equilibrium and ‘‘metastable’’ defects in amorphous silicon
29.
Yang S.-Y.; Yang Y.; Abelson J. R.; An I.; Lu Y.; Wronski C. R.; Collins R. W.
Hydrogen effects on the TCO/a‐Si,C;H interface: Progress by the NREL wide bandgap team
30.
An Ilsin; Lu Yiwei; Wronski C. R.; Collins R. W.
Real time spectroellipsometry study of the interaction of hydrogen with ZnO during ZnO/a‐Si;1-;xCxH interface formation
31.
Lu Yiwei; An Ilsin; Gunes M.; Wakagi M.; Wronski C. R.; Collins R. W.
Nucleation and growth of hydrogenated amorphous silicon‐carbon alloys; Effect of hydrogen dilution in plasma‐enhanced chemical vapor deposition
32.
Dawson R. M. A.; Fortmann C. M.; Gunes M.; Li Y. M.; Nag S. S.; Collins R. W.; Wronski C. R.
Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films
33.
An Ilsin; Li Y. M.; Wronski C. R.; Collins R. W.
Chemical equilibration of plasma‐deposited amorphous silicon with thermally generated atomic hydrogen
34.
Heller D. E.; Dawson R. M.; Malone C. T.; Nag S.; Wronski C. R.
Electron‐transport mechanisms in metal Schottky barrier contacts to hydrogenated amorphous silicon
35.
Gunes Mehmet; Wronski Christopher R.
Differences between light induced and native midgap states in intrinsic hydrogenated amorphous silicon obtained from detailed modeling of photoconductivities and subband‐gap absorption
36.
Li Y.-M.; An Ilsin; Nguyen H. V.; Wronski C. R.; Collins R. W.
Thin‐film coalescence in hydrogenated amorphous silicon probed by spectroscopic ellipsometry with millisecond‐scale resolution
37.
Li Y. M.; Dawson R. M.; Collins R. W.; Wronski C. R.; Wiedeman S.
Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films
38.
An Ilsin; Li Y. M.; Wronski C. R.; Nguyen H. V.; Collins R. W.
Insitu determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry
39.
Lee S.; Gunes M.; Wronski C. R.; Maley N.; Bennett M.
Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub‐band‐gap photoconductivity
40.
Wronski C. R.; Maley N.
Research on the stability of a‐Si;H based solar cells by SMART
41.
Fonash S. J.; Nicque J.-L.; Arch J. K.; Nag S. S.; Wronski C. R.
An experiment to distinguish between bimolecular and single‐carrier driven models of metastable defect generation
42.
Dawson R. M.; Wronski C. R.; Bennett M.
Densities of states below midgap determined from the space‐charge‐limited currents of holes in intrinsic hydrogenated amorphous silicon
43.
Grot S. A.; Lee S.; Badzian T.; Badzian A. R.; Wronski C. R.; Hatfield C. W.; Gildenblat G. Sh.; Messier R.
Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures
44.
Wronski C. R.; Lee S.; Hicks M.; Kumar Satyendra
Internal photoemission of holes and the mobility gap of hydrogenated amorphous silicon
45.
Hicks M. C.; Wronski C. R.; Grot S. A.; Gildenblat G. Sh.; Badzian A. R.; Badzian T.; Messier R.
The barrier height of Schottky diodes with a chemical‐vapor‐deposited diamond base
46.
Fortmann C. M.; Lange S.; Hicks M.; Wronski C. R.
Effect of light‐induced defects on the short wavelength quantum efficiencies of amorphous silicon solar cell structures
47.
Gildenblat G. Sh.; Grot S. A.; Wronski C. R.; Badzian A. R.; Badzian T.; Messier R.
Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films
48.
Wronski C. R.
Reversible light‐induced changes in a‐Si;H and a‐Si;H solar cells
49.
Wronski C. R.; Tiedje T.; Persans P.; Abeles B.; Hicks M.
Charge transfer enhancement of photoconductivity in hydrogenated amorphous Ge/Si multilayer films
50.
Wronski C. R.; Persans P. D.; Abeles B.
Electrical transport in amorphous hydrogenated Ge/Si superlattices
51.
Moustakas T. D.; Wronski C. R.; Tiedje T.
Electron‐hole recombination in reactively sputtered amorphous silicon solar cells
52.
Abeles B.; Wronski C. R.; Goldstein Y.; Stasiewski H. E.; Gutkowicz-Krusin D.; Tiedje T.; Cody G. D.
Collection efficiency of photogenerated carriers in silicon hydride a‐SiH;x MIS solar cell structures
53.
Gutkowicz-Krusin D.; Wronski C. R.; Tiedje T.
Carrier collection efficiency of a‐SiH;x Schottky‐barrier solar cells
54.
Wronski C. R.; Abeles B.; Cody G. D.; Tiedje T.
Internal photoemission in hydrogenated amorphous‐Si films
55.
Tiedje T.; Abeles B.; Morel D. L.; Moustakas T. D.; Wronski C. R.
Electron drift mobility in hydrogenated a‐Si
29
Collins, Robert W.
11
Koh, Joohyun
6
Koval, Randy J.
Pearce, Joshua M.
Fujiwara, H
Tiedje, Thomas
5
Ferlauto, Andre S.
4
Deng, J
3
Messier, Russell
Podraza, Nikolas J.
2
Rovira, PI
Cody, George D.
Fortmann, Charles M.
1
Li, Jing
Guha, Subhendu