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Wronski, Christopher R.

Computed

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Research Profile

Latest Publications

1.
2010

Yoon Heayoung P.; Barber Greg D.; Podraza Nikolas J.; Redwing Joan M.; Mallouk Thomas E.; Wronski Christopher R.; Yuwen Yu A.; Kendrick Chito E.; Mayer Theresa S.

Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths
Appl. Phys. Lett. 96, 213503 (2010)
Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2.
2009

Podraza N. J.; Li Jing; Dickey E. C.; Wronski C. R.; Collins R. W.

Analysis of controlled mixed-phase (amorphous+microcrystalline) silicon thin films by real time spectroscopic ellipsometry
J. Vac. Sci. Technol. A 27, 1255 (2009)
Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
3.
2007

Pearce J. M.; Podraza N.; Collins R. W.; Al-Jassim M. M.; Jones K. M.; Deng J.; Wronski C. R.

Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous+nanocrystalline)p-type contacts of low nanocrystalline content
J. Appl. Phys. 101, 114301 (2007)
Physics Department, Clarion University of Pennsylvania, Clarion, Pennsylvania 16214

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All Publications

1.
2010

Yoon Heayoung P.; Barber Greg D.; Podraza Nikolas J.; Redwing Joan M.; Mallouk Thomas E.; Wronski Christopher R.; Yuwen Yu A.; Kendrick Chito E.; Mayer Theresa S.

Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths
Appl. Phys. Lett. 96, 213503 (2010)
Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2.
2009

Podraza N. J.; Li Jing; Dickey E. C.; Wronski C. R.; Collins R. W.

Analysis of controlled mixed-phase (amorphous+microcrystalline) silicon thin films by real time spectroscopic ellipsometry
J. Vac. Sci. Technol. A 27, 1255 (2009)
Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
3.
2007

Pearce J. M.; Podraza N.; Collins R. W.; Al-Jassim M. M.; Jones K. M.; Deng J.; Wronski C. R.

Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous+nanocrystalline)p-type contacts of low nanocrystalline content
J. Appl. Phys. 101, 114301 (2007)
Physics Department, Clarion University of Pennsylvania, Clarion, Pennsylvania 16214
4.
2005

Deng J.; Wronski C. R.

Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a‐;Si;H solar cells
J. Appl. Phys. 98, 024509 (2005)
Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802
5.
2003

Pearce J. M.; Deng J.; Collins R. W.; Wronski C. R.

Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge
Appl. Phys. Lett. 83, 3725 (2003)
Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16801;
6.
2003

Deng J.; Pearce J. M.; Koval R. J.; Vlahos V.; Collins R. W.; Wronski C. R.

Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on ;p–;i–;n and n–;i–;p solar cells
Appl. Phys. Lett. 82, 3023 (2003)
Center for Thin Film Devices, the Pennsylvania State University, University Park, Pennsylvania 16802;
7.
2002

Ferlauto A. S.; Ferreira G. M.; Pearce J. M.; Wronski C. R.; Collins R. W.; Deng Xunming; Ganguly Gautam

Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics
J. Appl. Phys. 92, 2424 (2002)
Department of Physics, Materials Research Institute, and Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802;
8.
2002

Koval R. J.; Chen Chi; Ferreira G. M.; Ferlauto A. S.; Pearce J. M.; Rovira P. I.; Wronski C. R.; Collins R. W.

Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p; solar cells by incorporation of protocrystalline silicon p-type layers
Appl. Phys. Lett. 81, 1258 (2002)
Center for Thin Film Devices, Department of Electrical Engineering,
9.
2002

Ferlauto A. S.; Koval R. J.; Wronski C. R.; Collins R. W.

Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications
Appl. Phys. Lett. 80, 2666 (2002)
Department of Physics and Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802;
10.
2000

Pearce Joshua M.; Koval Randy J.; Ferlauto Andre S.; Collins Robert W.; Wronski Christopher R.; Yang Jeffrey; Guha Subbhendu

Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
Appl. Phys. Lett. 77, 3093 (2000)
Center For Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16801;
11.
1999

Koh Joohyun; Ferlauto A. S.; Rovira P. I.; Wronski C. R.; Collins R. W.

Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane
Appl. Phys. Lett. 75, 2286 (1999)
Center for Thin Film Devices and Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802;
12.
1999

Koval Randy J.; Koh Joohyun; Lu Z.; Jiao L.; Collins R. W.; Wronski C. R.

Performance and stability of Si:H p–i–n; solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary
Appl. Phys. Lett. 75, 1553 (1999)
Center for Thin Film Devices, Electrical Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802;
13.
1999

Fujiwara H.; Koh Joohyun; Wronski C. R.; Collins R. W.

Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells
Appl. Phys. Lett. 74, 3687 (1999)
Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802;
14.
1999

Koh Joohyun; Fujiwara H.; Koval R. J.; Wronski C. R.; Collins R. W.

Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6,B(CH3)3 and BF3 dopant source gases
J. Appl. Phys. 85, 4141 (1999)
Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802;
15.
1998

Koh Joohyun; Lee Yeeheng; Fujiwara H.; Wronski C. R.; Collins R. W.

Optimization of hydrogenated amorphous silicon p–i–n; solar cells with two-step i layers guided by real-time spectroscopic ellipsometry
Appl. Phys. Lett. 73, 1526 (1998)
Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802;
16.
1998

Fujiwara H.; Wronski C. R.; Lee Yeeheng; Koh Joohyun; Collins R. W.

Real time spectroscopic ellipsometry characterization of structural and thermal equilibration of amorphous silicon–carbon alloy ;p layers in p-i-n solar cell fabrication
J. Appl. Phys. 84, 2278 (1998)
Center For Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802;
17.
1998

Fujiwara H.; Koh Joohyun; Wronski C. R.; Collins R. W.; Burnham J. S.

Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution
Appl. Phys. Lett. 72, 2993 (1998)
Department of Physics and Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802;
18.
1998

Jiao L.; Chen I.; Collins R. W.; Wronski C. R.; Hata N.

An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements
Appl. Phys. Lett. 72, 1057 (1998)
Electrical Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802;
19.
1997

Fujiwara H.; Koh Joohyun; Wronski C. R.; Collins R. W.

Application of real time spectroscopic ellipsometry for high resolution depth profiling of compositionally graded amorphous silicon alloy thin films
Appl. Phys. Lett. 70, 2150 (1997)
Materials Research Laboratory and Departments of Electrical Engineering and Physics, The Pennsylvania State University, University Park, Pennsylvania 16802
20.
1997

Güneş Mehmet; Wronski Christopher R.

Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films
J. Appl. Phys. 81, 3526 (1997)
Department of Physics, Faculty of Science, İzmir Institute of Technology, Gaziosmanpaşa Bulv. No; 16, Çankaya, İzmir, 35210 Turkey;
21.
1996

Jiao Lihong; Liu Hongyue; Semoushikina S.; Lee Yeeheng; Wronski C. R.

Initial, rapid light‐induced changes in hydrogenated amorphous silicon materials and solar cell structures; The effects of charged defects
Appl. Phys. Lett. 69, 3713 (1996)
Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
22.
1996

Koh Joohyun; Lu Yiwei; Wronski C. R.; Kuang Yalei; Collins R. W.; Tsong T. T.; Strausser Y. E.

Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films
Appl. Phys. Lett. 69, 1297 (1996)
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
23.
1996

Kim Sangbo; Wronski C. R.; Jiao Lihong; Koh Joohyun; Burnham J. S.; Collins R. W.

Real time spectroellipsometry characterization of optical gap profiles in compositionally‐graded semiconductor structures; Applications to bandgap engineering in amorphous silicon‐carbon alloy solar cells
J. Appl. Phys. 80, 2420 (1996)
Department of Physics and Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
24.
1996

Chen Ing-Shin; Jackson T. N.; Wronski C. R.

Characterization of semiconductor heterojunctions using internal photoemission
J. Appl. Phys. 79, 8470 (1996)
Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
25.
1995

Koh Joohyun; Lu Yiwei; Kim Sangbo; Burnham J. S.; Wronski C. R.; Collins R. W.

Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n; solar cells; Characterization of microstructural evolution and optical gaps
Appl. Phys. Lett. 67, 2669 (1995)
Materials Research Laboratory and Department of Physics, The Pennsylvania State University University Park, Pennsylvania 16802
26.
1994

Nguyen H. V.; An Ilsin; Collins R. W.; Lu Yiwei; Wakagi M.; Wronski C. R.

Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry
Appl. Phys. Lett. 65, 3335 (1994)
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
27.
1994

Güneş Mehmet; Wronski Christopher R.; McMahon T. J.

Charged defect states in intrinsic hydrogenated amorphous silicon films
J. Appl. Phys. 76, 2260 (1994)
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
28.
1994

Fortmann C. M.; Dawson R. M.; Liu H. Y.; Wronski C. R.

Charge‐defect thermodynamic equilibrium and ‘‘metastable’’ defects in amorphous silicon
J. Appl. Phys. 76, 768 (1994)
The Pennsylvania State University, Electrical Engineering Department, University Park, Pennsylvania 16802
29.
1994

Yang S.-Y.; Yang Y.; Abelson J. R.; An I.; Lu Y.; Wronski C. R.; Collins R. W.

Hydrogen effects on the TCO/a‐Si,C;H interface: Progress by the NREL wide bandgap team
AIP Conf. Proc. 306, 431 (1994)
Coordinated Science Laboratory and the Department of Materials Science, University of Illinois, Urbana, Illinois 61801
30.
1994

An Ilsin; Lu Yiwei; Wronski C. R.; Collins R. W.

Real time spectroellipsometry study of the interaction of hydrogen with ZnO during ZnO/a‐Si;1-;xCxH interface formation
Appl. Phys. Lett. 64, 3317 (1994)
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
31.
1993

Lu Yiwei; An Ilsin; Gunes M.; Wakagi M.; Wronski C. R.; Collins R. W.

Nucleation and growth of hydrogenated amorphous silicon‐carbon alloys; Effect of hydrogen dilution in plasma‐enhanced chemical vapor deposition
Appl. Phys. Lett. 63, 2228 (1993)
Materials Research Laboratory and Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
32.
1993

Dawson R. M. A.; Fortmann C. M.; Gunes M.; Li Y. M.; Nag S. S.; Collins R. W.; Wronski C. R.

Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films
Appl. Phys. Lett. 63, 955 (1993)
Electronic Materials Processing and Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
33.
1993

An Ilsin; Li Y. M.; Wronski C. R.; Collins R. W.

Chemical equilibration of plasma‐deposited amorphous silicon with thermally generated atomic hydrogen
Phys. Rev. B 48, 4464 (1993)
Materials Research Laboratory and the Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802
34.
1992

Heller D. E.; Dawson R. M.; Malone C. T.; Nag S.; Wronski C. R.

Electron‐transport mechanisms in metal Schottky barrier contacts to hydrogenated amorphous silicon
J. Appl. Phys. 72, 2377 (1992)
The Pennsylvania State University, University Park, Pennsylvania 16802
35.
1992

Gunes Mehmet; Wronski Christopher R.

Differences between light induced and native midgap states in intrinsic hydrogenated amorphous silicon obtained from detailed modeling of photoconductivities and subband‐gap absorption
Appl. Phys. Lett. 61, 678 (1992)
Center for Electronic Materials and Processing, ECE, The Pennsylvania State University, University Park, Pennsylvania 16802
36.
1992

Li Y.-M.; An Ilsin; Nguyen H. V.; Wronski C. R.; Collins R. W.

Thin‐film coalescence in hydrogenated amorphous silicon probed by spectroscopic ellipsometry with millisecond‐scale resolution
Phys. Rev. Lett. 68, 2814 (1992)
Materials Research Laboratory and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802
37.
1991

Li Y. M.; Dawson R. M.; Collins R. W.; Wronski C. R.; Wiedeman S.

Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films
Appl. Phys. Lett. 59, 2549 (1991)
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, Pennsylvania 16802
38.
1991

An Ilsin; Li Y. M.; Wronski C. R.; Nguyen H. V.; Collins R. W.

Insitu determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry
Appl. Phys. Lett. 59, 2543 (1991)
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
39.
1991

Lee S.; Gunes M.; Wronski C. R.; Maley N.; Bennett M.

Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub‐band‐gap photoconductivity
Appl. Phys. Lett. 59, 1578 (1991)
Center for Electronic Materials and Processing, and The Department of Electrical and Computer Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
40.
1991

Wronski C. R.; Maley N.

Research on the stability of a‐Si;H based solar cells by SMART
AIP Conf. Proc. 234, 11 (1991)
The Pennsylvania State University, University Park, Pennsylvania 16802
41.
1991

Fonash S. J.; Nicque J.-L.; Arch J. K.; Nag S. S.; Wronski C. R.

An experiment to distinguish between bimolecular and single‐carrier driven models of metastable defect generation
AIP Conf. Proc. 234, 114 (1991)
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, Pennsylvania 16802
42.
1991

Dawson R. M.; Wronski C. R.; Bennett M.

Densities of states below midgap determined from the space‐charge‐limited currents of holes in intrinsic hydrogenated amorphous silicon
Appl. Phys. Lett. 58, 272 (1991)
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, Pennsylvania 16802
43.
1990

Grot S. A.; Lee S.; Badzian T.; Badzian A. R.; Wronski C. R.; Hatfield C. W.; Gildenblat G. Sh.; Messier R.

Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures
J. Mater. Res. 5, 2497 (1990)
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Penn State University, University Park, Pennsylvania 16802
44.
1989

Wronski C. R.; Lee S.; Hicks M.; Kumar Satyendra

Internal photoemission of holes and the mobility gap of hydrogenated amorphous silicon
Phys. Rev. Lett. 63, 1420 (1989)
Center for Electronic Materials and Processing, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
45.
1989

Hicks M. C.; Wronski C. R.; Grot S. A.; Gildenblat G. Sh.; Badzian A. R.; Badzian T.; Messier R.

The barrier height of Schottky diodes with a chemical‐vapor‐deposited diamond base
J. Appl. Phys. 65, 2139 (1989)
Center for Electronic Materials and Devices, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
46.
1988

Fortmann C. M.; Lange S.; Hicks M.; Wronski C. R.

Effect of light‐induced defects on the short wavelength quantum efficiencies of amorphous silicon solar cell structures
J. Appl. Phys. 64, 4219 (1988)
Solarex Thin Film Division, Newtown‐Yardley Road, Newtown, Pennsylvania 18940;
47.
1988

Gildenblat G. Sh.; Grot S. A.; Wronski C. R.; Badzian A. R.; Badzian T.; Messier R.

Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films
Appl. Phys. Lett. 53, 586 (1988)
The Pennsylvania State University, University Park, Pennsylvania 16802
48.
1987

Wronski C. R.

Reversible light‐induced changes in a‐Si;H and a‐Si;H solar cells
AIP Conf. Proc. 157, 1 (1987)
Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
49.
1986

Wronski C. R.; Tiedje T.; Persans P.; Abeles B.; Hicks M.

Charge transfer enhancement of photoconductivity in hydrogenated amorphous Ge/Si multilayer films
Appl. Phys. Lett. 49, 1378 (1986)
Exxon Research and Engineering, Route 22, East Annandale, New Jersey 08801
50.
1986

Wronski C. R.; Persans P. D.; Abeles B.

Electrical transport in amorphous hydrogenated Ge/Si superlattices
Appl. Phys. Lett. 49, 569 (1986)
Exxon Research and Engineering Company, Annandale, New Jersey 08801
51.
1981

Moustakas T. D.; Wronski C. R.; Tiedje T.

Electron‐hole recombination in reactively sputtered amorphous silicon solar cells
Appl. Phys. Lett. 39, 721 (1981)
Corporate Research Laboratory, Exxon Research and Engineering Company, P. O. Box 45, Linden, New Jersey 07036
52.
1981

Abeles B.; Wronski C. R.; Goldstein Y.; Stasiewski H. E.; Gutkowicz-Krusin D.; Tiedje T.; Cody G. D.

Collection efficiency of photogenerated carriers in silicon hydride a‐SiH;x MIS solar cell structures
AIP Conf. Proc. 73, 298 (1981)
Exxon Research and Engineering Company, P.O. Box 45, Linden, N.J. 07036
53.
1981

Gutkowicz-Krusin D.; Wronski C. R.; Tiedje T.

Carrier collection efficiency of a‐SiH;x Schottky‐barrier solar cells
Appl. Phys. Lett. 38, 87 (1981)
Exxon Research and Engineering Company, P. O. Box 45, Linden, New Jersey 07036
54.
1980

Wronski C. R.; Abeles B.; Cody G. D.; Tiedje T.

Internal photoemission in hydrogenated amorphous‐Si films
Appl. Phys. Lett. 37, 96 (1980)
Corporate Research Laboratory, Exxon Research & Engineering Co., P. O. Box 45, Linden, New Jersey 07036;
55.
1980

Tiedje T.; Abeles B.; Morel D. L.; Moustakas T. D.; Wronski C. R.

Electron drift mobility in hydrogenated a‐Si
Appl. Phys. Lett. 36, 695 (1980)
Corporate Research Laborabory, Exxon Research and Engineering Company, Linden, New Jersey 07036

Co-authors

Co-publications
29

Collins, Robert W.
11

Koh, Joohyun
6

Koval, Randy J.
6

Pearce, Joshua M.
6

Fujiwara, H
6

Tiedje, Thomas
5

Ferlauto, Andre S.
4

Deng, J
3

Messier, Russell
3

Podraza, Nikolas J.
2

Rovira, PI
2

Cody, George D.
2

Fortmann, Charles M.
1

Li, Jing
1

Guha, Subhendu