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Wager, John F.

Computed

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Research Profile

Latest Publications

1.
2012

Alimardani Nasir; William Cowell E.; Wager John F.; Conley John F.; Evans David R.; Chin Matthew; Kilpatrick Stephen J.; Dubey Madan

Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers
J. Vac. Sci. Technol. A 30, 01A113 (2012)
School of EECS, Oregon State University, 1148 Kelley Engineering Center, Corvallis, Oregon 97331
2.
2011

Waggoner T.; Triska J.; Hoshino K.; Wager J. F.; Conley J. F.

Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
J. Vac. Sci. Technol. B 29, 04D115 (2011)
Oregon State University, School of EECS, 1148 Kelley Engineering Center, Corvallis, Oregon 97331-5501
3.
2011

Wager John F.; Robertson John

Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer
J. Appl. Phys. 109, 094501 (2011)
School of EECS, Oregon State University, Corvallis, Oregon 97331-5501, USA

Curriculum Vitae

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All Publications

1.
2012

Alimardani Nasir; William Cowell E.; Wager John F.; Conley John F.; Evans David R.; Chin Matthew; Kilpatrick Stephen J.; Dubey Madan

Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers
J. Vac. Sci. Technol. A 30, 01A113 (2012)
School of EECS, Oregon State University, 1148 Kelley Engineering Center, Corvallis, Oregon 97331
2.
2011

Waggoner T.; Triska J.; Hoshino K.; Wager J. F.; Conley J. F.

Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
J. Vac. Sci. Technol. B 29, 04D115 (2011)
Oregon State University, School of EECS, 1148 Kelley Engineering Center, Corvallis, Oregon 97331-5501
3.
2011

Wager John F.; Robertson John

Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer
J. Appl. Phys. 109, 094501 (2011)
School of EECS, Oregon State University, Corvallis, Oregon 97331-5501, USA
4.
2010

Triska J.; Conley J. F.; Presley R.; Wager J. F.

Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics
J. Vac. Sci. Technol. B 28, C5I1 (2010)
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97333-5501
5.
2009

Erslev Peter T.; Sundholm Eric S.; Presley Rick E.; Hong David; Wager John F.; Cohen J. David

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide
Appl. Phys. Lett. 95, 192115 (2009)
Department of Physics, University of Oregon, 1274 University of Oregon, Eugene, Oregon 97403, USA
6.
2006

Chiang H. Q.; Hong D.; Hung C. M.; Presley R. E.; Wager John F.; Park C.-H; Keszler D. A.; Herman G. S.

Thin-film transistors with amorphous indium gallium oxide channel layers
J. Vac. Sci. Technol. B 24, 2702 (2006)
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-3211
7.
2006

Hong David; Chiang Hai Q.; Wager John F.

Zinc tin oxide thin-film transistors via reactive sputtering using a metal target
J. Vac. Sci. Technol. B 24, L23 (2006)
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, Oregon 97331-3211
8.
2005

Hong David; Wager John F.

Passivation of zinc–tin–oxide thin-film transistors
J. Vac. Sci. Technol. B 23, L25 (2005)
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-3211
9.
2005

Dehuff N. L.; Kettenring E. S.; Hong D.; Chiang H. Q.; Wager J. F.; Hoffman R. L.; Park C.-H.; Keszler D. A.

Transparent thin-film transistors with zinc indium oxide channel layer
J. Appl. Phys. 97, 064505 (2005)
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-3211
10.
2005

Chiang H. Q.; Wager J. F.; Hoffman R. L.; Jeong J.; Keszler D. A.

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Appl. Phys. Lett. 86, 013503 (2005)
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-3211
11.
2003

Hoffman R. L.; Norris B. J.; Wager J. F.

ZnO-based transparent thin-film transistors
Appl. Phys. Lett. 82, 733 (2003)
Hewlett-Packard Company, 1000 NE Circle Boulevard, Corvallis, Oregon 97330-4239;
12.
2002

Park Sangmoon; Keszler Douglas A.; Valencia Melinda M.; Hoffman Randy L.; Bender Jeffrey P.; Wager John F.

Transparent p-type conducting BaCu2S2 films
Appl. Phys. Lett. 80, 4393 (2002)
Department of Chemistry, 153 Gilbert Hall, Oregon State University, Corvallis, Oregon 97331-4003;
13.
2001

Hoffman R. L.; Wager J. F.; Jayaraj M. K.; Tate J.

Electrical characterization of transparent p–i–n; heterojunction diodes
J. Appl. Phys. 90, 5763 (2001)
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331-3211
14.
2001

Hitt J. C.; Wager J. F.

Insulator issues in alternating-current thin-film electroluminescent devices
J. Appl. Phys. 90, 2711 (2001)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211;
15.
2001

Baukol B. A.; Hitt J. C.; Wager J. F.; Sun S.-S.

Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices
J. Appl. Phys. 90, 2185 (2001)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211
16.
2001

Norris B. J.; Wager J. F.

Transient brightness, current, and voltage characterization of organic light emitting devices
J. Vac. Sci. Technol. B 19, 546 (2001)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211;
17.
2000

Baukol B. A.; Hitt J. C.; Keir P. D.; Wager J. F.

Electroluminescence thermal quenching in SrS:Cu thin-film electroluminescent devices
Appl. Phys. Lett. 76, 185 (2000)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211;
18.
1999

Keir P. D.; Maddix C.; Baukol B. A.; Wager J. F.; Clark B. L.; Keszler D. A.

Lanthanide doping in ZnS and SrS thin-film electroluminescent devices
J. Appl. Phys. 86, 6810 (1999)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211;
19.
1999

Keir P. D.; Wager J. F.; Clark B. L.; Li D.; Keszler D. A.

Alkali metal coactivators in SrS: Cu,F thin-film electroluminescent devices
Appl. Phys. Lett. 75, 1398 (1999)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211;
20.
1998

Dür Manfred; Goodnick Stephen M.; Pennathur Shankar S.; Wager John F.; Reigrotzki Martin; Redmer Ronald

High-field transport and electroluminescence in ZnS phosphor layers
J. Appl. Phys. 83, 3176 (1998)
Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706;
21.
1998

Hitt J. C.; Keir P. D.; Wager J. F.; Sun S. S.

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices
J. Appl. Phys. 83, 1141 (1998)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211
22.
1997

Myers R.; Wager J. F.

Transferred charge analysis of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices
J. Appl. Phys. 81, 506 (1997)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211
23.
1996

Lite K.; Sun S. S.; Morton D. C.; Wager J. F.; Plant T. K.; Thuemler R. L.; Mauch R. H.

Vacuum ultraviolet reflectivity measurements of thin‐film electroluminescent phosphors
Appl. Phys. Lett. 69, 3525 (1996)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
24.
1996

Reigrotzki Martin; Redmer Ronald; Lee Insook; Pennathur Shankar S.; Dür Manfred; Wager John F.; Goodnick Stephen M.; Vogl Peter; Eckstein Harald; Schattke Wolfgang

Impact ionization rate and high‐field transport in ZnS with nonlocal band structure
J. Appl. Phys. 80, 5054 (1996)
Universität Rostock, Fachbereich Physik, Universitätsplatz 3, D‐18051 Rostock, Germany;
25.
1996

Keir P. D.; Le H.; Thuemler R. L.; Hitt J.; Wager J. F.

Relaxation charge anomalies in the charge–voltage characteristics of alternating‐current thin‐film electroluminescent devices
Appl. Phys. Lett. 69, 2421 (1996)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
26.
1996

Shih S.; Keir P. D.; Hitt J.; Wager J. F.

Offset of the electrical characteristics of alternating‐current thin‐film electroluminescent devices
Appl. Phys. Lett. 69, 1921 (1996)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State, University, Corvallis, Oregon 97331‐3211;
27.
1995

Shih S.; Keir P. D.; Wager J. F.; Viljanen J.

Space charge generation in ZnS:Mn alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 78, 5775 (1995)
Department of Electrical and Computer Engineering, Center for Advanced Material Research, Oregon State University, Corvallis, Oregon 97331‐3211;
28.
1995

Keir P. D.; Ang W. M.; Wager J. F.

Modeling space charge in alternating‐current thin‐film electroluminescent devices using a single‐sheet charge model
J. Appl. Phys. 78, 4668 (1995)
Center for Advanced Materials Research, Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331‐3211;
29.
1995

Streicher K.; Plant T. K.; Wager J. F.

Hot‐electron impact excitation of ZnS;Tb alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 78, 2101 (1995)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
30.
1995

Ang W. M.; Pennathur S.; Pham L.; Wager J. F.; Goodnick S. M.; Douglas A. A.

Evidence for band‐to‐band impact ionization in evaporated ZnS;Mn alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 77, 2719 (1995)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
31.
1994

Pham Long V.; Wager John F.; Sun Sey-Shing; Dickey Eric; Tuenge Richard T.; King Christopher N.

Electrical characterization of blue electroluminescent devices
Proc. SPIE Int. Soc. Opt. Eng. 2174, 190 (1994)
Oregon State Univ. (USA)
32.
1994

Abu-Dayah A.; Wager J. F.

Aging studies of atomic layer epitaxy ZnS:Mn alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 75, 3593 (1994)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
33.
1993

Abu-Dayah A.; Wager J. F.; Kobayashi S.

Electrical characterization of atomic layer epitaxy ZnS:Mn alternating‐current thin‐film electroluminescent devices subject to various waveforms
J. Appl. Phys. 74, 5575 (1993)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
34.
1993

Douglas A. A.; Wager J. F.; Morton D. C.; Koh J. B.; Hogh C. P.

Hot electron luminescence in ZnS alternating‐current thin‐film electroluminescent devices
Appl. Phys. Lett. 63, 231 (1993)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
35.
1993

Bhattacharyya K.; Goodnick S. M.; Wager J. F.

Monte Carlo simulation of electron transport in alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 73, 3390 (1993)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
36.
1993

Abu-Dayah A.; Kobayashi S.; Wager J. F.

Internal charge‐phosphor field characteristics of alternating‐current thin‐film electroluminescent devices
Appl. Phys. Lett. 62, 744 (1993)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
37.
1993

Douglas A. A.; Wager J. F.; Morton D. C.; Koh J. B.; Hogh C. P.

Evidence for space charge in atomic layer epitaxy ZnS:Mn alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 73, 296 (1993)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97330‐3211;
38.
1992

Davidson J. D.; Wager J. F.; Kobayashi S.

Aging studies of evaporated ZnS:Mn alternating‐current thin‐film electroluminescent devices
J. Appl. Phys. 71, 4040 (1992)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211;
39.
1991

Wager J. F.

Energetics of self‐diffusion in GaAs
J. Appl. Phys. 69, 3022 (1991)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
40.
1990

Dobson T. W.; Scalvi L. V. A.; Wager J. F.

Transient decay of persistent photoconductivity in Al0.3Ga0.7As
J. Appl. Phys. 68, 601 (1990)
Tektronix, Inc., Beaverton, Oregon 97077
41.
1990

McArthur R. C.; Davidson J. D.; Wager J. F.; Khormaei I.; King C. N.

Capacitance‐voltage characteristics of alternating‐current thin‐film electroluminescent devices
Appl. Phys. Lett. 56, 1889 (1990)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
42.
1989

Dobson T. W.; Wager J. F.

Enthalpy of formation of antisite defects and antistructure pairs in III‐V compound semiconductors
J. Appl. Phys. 66, 1997 (1989)
Tektronix, Inc., Beaverton, Oregon 97077
43.
1989

Dobson T. W.; Wager J. F.; Van Vechten J. A.

Entropy of migration for atomic hopping
Phys. Rev. B 40, 2962 (1989)
Center for Advanced Materials Research, Department of Electrical ‐3202 Computer Engineering, Oregon State University, Corvallis, Oregon 97331‐3202;
44.
1989

Nelson A. J.; Benson D. K.; Tracy C. E.; Kazmerski L. L.; Wager J. F.

Electron energy‐loss spectroscopy analysis of low‐temperature plasma‐enhanced chemically vapor deposited ;a‐C;H films
J. Vac. Sci. Technol. A 7, 1350 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
45.
1989

Wager J. F.; Van Vechten J. A.

Reply to ‘‘Comment on ‘Atomic model for the ;EL2 defect in GaAs’’
Phys. Rev. B 39, 1967 (1989)
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331‐3211;
46.
1988

Wager J. F.; Van Vechten J. A.

Reply to ‘‘Comment on ‘Atomic model for the ;EL2 defect in GaAs’’
Phys. Rev. B 38, 10956 (1988)
Center for Advanced Materials Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331
47.
1988

Kim S. B.; Wager J. F.

Electroluminescence in diamond‐like carbon films
Appl. Phys. Lett. 53, 1880 (1988)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
48.
1988

Juang M. T.; Wager J. F.; Van Vechten J. A.

Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors
J. Electrochem. Soc. 135, 2023 (1988)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
49.
1988

Juang M. T.; Wager J. F.; Van Vechten J. A.

Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors
J. Electrochem. Soc. 135, 2019 (1988)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
50.
1987

Wager J. F.; Van Vechten J. A.

Atomic model for the EL0 defect in GaAs
J. Appl. Phys. 62, 4192 (1987)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
51.
1987

Wager J. F.; Van Vechten J. A.

Atomic model for the EL2 defect in GaAs
Phys. Rev. B 35, 2330 (1987)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
52.
1987

Wager J. F.; Owen S. J. T.; Prasad S. J.

InP MISFET Technology
J. Electrochem. Soc. 134, 160 (1987)
Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331
53.
1985

Van Vechten J. A.; Wager J. F.

Asymmetry of anion and cation vacancy migration enthalpies in III‐V compound semiconductors; Role of the kinetic energy
Phys. Rev. B 32, 5259 (1985)
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
54.
1985

Wager J. F.; Van Vechten J. A.

Atomic model for the M center in InP
Phys. Rev. B 32, 5251 (1985)
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331
55.
1985

Krivanek O. L.; Liliental Z.; Wager J. F.; Gan R. G.; Goodnick S. M.; Wilmsen C. W.

A combined high‐resolution electron microscopy, x‐ray photoemission spectroscopy, and electrical properties study of the InP–SiO;2 interface
J. Vac. Sci. Technol. B 3, 1081 (1985)
Center for Solid State Science and Department of Physics, Arizona State University, Tempe, Arizona 85287
56.
1985

Liliental Z.; Krivanek O. L.; Wager J. F.; Goodnick S. M.

Structure of the InP/SiO2 interface
Appl. Phys. Lett. 46, 889 (1985)
Center for Solid State Science and the Department of Physics, Arizona State University, Tempe, Arizona 85287
57.
1985

Van Vechten J. A.; Wager J. F.

Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors; Drift in InP metal‐insulator‐semiconductor field‐effect transistors
J. Appl. Phys. 57, 1956 (1985)
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
58.
1985

Wager J. F.; Rhiger D. R.

Surface characterization of Hg0.7Cd0.3Te native oxides
J. Vac. Sci. Technol. A 3, 212 (1985)
Hughes Research Laboratories, Malibu, California 90265
59.
1984

Wager J. F.; Clark M. D.; Jullens R. A.

SiO2/InP interfaces with reduced interface state density
J. Vac. Sci. Technol. B 2, 584 (1984)
Hughes Research Laboratories, Malibu, California 90265
60.
1984

Geib K. M.; Wilmsen C. W.; Gann R. G.; Lin D. Y.; Goodnick S. M.; Wager J. F.

Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s
J. Vac. Sci. Technol. B 2, 516 (1984)
Colorado State University, Fort Collins, Colorado 80523
61.
1983

Wager J. F.; Geib K. M.; Wilmsen C. W.; Kazmerski L. L.

Native oxide formation and electrical instabilities at the insulator/InP interface
J. Vac. Sci. Technol. B 1, 778 (1983)
Hughes Research Laboratories, Malibu, California 90265
62.
1983

Kazmerski L. L.; Jamjoum O.; Ireland P. J.; Wager J. F.; Bachmann K. J.

Summary Abstract: Oxidation of CuInSe2
J. Vac. Sci. Technol. A 1, 668 (1983)
Solar Energy Research Institute, Golden, Colorado 80401
63.
1983

Ireland P. J.; Stanchina W.; Russell P. E.; Ahrenkiel R. K.; Kazmerski L. L.; Jamjoum O.; Wager J. F.

Surface and interface analysis of GaAs–oxyfluorides
J. Vac. Sci. Technol. A 1, 653 (1983)
SERI, Golden, Colorado 80401
64.
1983

Wager J. F.; Wilmsen C. W.; Kazmerski L. L.

Estimation of the band gap of InPO4
Appl. Phys. Lett. 42, 589 (1983)
Hughes Research Laboratories, Malibu, California 90265
65.
1982

Wager J. F.; Wilmsen C. W.

Plasma‐enhanced chemical vapor deposited SiO;2/InP interface
J. Appl. Phys. 53, 5789 (1982)
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
66.
1981

Wager J. F.; Ellsworth D. L.; Goodnick S. M.; Wilmsen C. W.

Composition and thermal stability of thin native oxides on InP
J. Vac. Sci. Technol. 19, 513 (1981)
Colorado State University, Fort Collins, Colorado 80523
67.
1980

Wager J. F.; Wilmsen C. W.

SiO2/InP interface formation: Thermodynamic considerations
J. Vac. Sci. Technol. 17, 800 (1980)
Colorado State University, Fort Collins, Colorado 80523
68.
1980

Wager J. F.; Wilmsen C. W.

Thermal oxidation of InP
J. Appl. Phys. 51, 812 (1980)
Colorado State University, Fort Collins, Colorado 80523
69.
1980

Goodnick S. M.; Wager J. F.; Wilmsen C. W.

Thermal degradation of indium‐tin‐oxide/;p‐silicon solar cells
J. Appl. Phys. 51, 527 (1980)
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523

Co-authors

Co-publications
9

Goodnick, Stephen M.
8

Keir, PD
6

Keszler, Douglas A.
6

Hitt, JC
5

Hoffman, Randy L.
5

Kazmerski, LL
5

Hong, David
4

Chiang, Hai Q.
3

Baukol, BA
2

Clark, Benjamin L.
2

Geib, Kent
2

Redmer, Ronald
2

Norris, BJ
1

Park, C.-H.
1

Stanchina, William