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Urisu, Tsuneo

Computed

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Research Profile

Latest Publications

1.
2010

He Tingchao; Wang Changshun; Urisu Tsuneo; Nagahiro Takeshi; Tero Ryugo; Xia Rong

The PDMS-based microfluidic channel fabricated by synchrotron radiation stimulated etching
Opt. Express 18, 9733 (2010)
2.
2010

Chiang Tsung; Makimura Tetsuya; He Tingchao; Torii Shuichi; Yoshida Tomoko; Tero Ryugo; Wang Changshun; Urisu Tsuneo

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂ as a reaction gas
J Synchrotron Rad 17, 69 (2010)
Institute for Molecular Science, Okazaki 444-8585, Japan
3.
2009

Asano Toshifumi; Nakamura Takuya; Wakahara Akihiro; Urisu Tsuneo

Noise Properties of Incubation-Type Planar Ion Channel Biosensor
Jpn. J. Appl. Phys., Part 1 48, 027001 (2009)
The Graduate University for Advanced Studies, Okazaki, Aichi 444-8585, Japan

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All Publications

1.
2010

He Tingchao; Wang Changshun; Urisu Tsuneo; Nagahiro Takeshi; Tero Ryugo; Xia Rong

The PDMS-based microfluidic channel fabricated by synchrotron radiation stimulated etching
Opt. Express 18, 9733 (2010)
2.
2010

Chiang Tsung; Makimura Tetsuya; He Tingchao; Torii Shuichi; Yoshida Tomoko; Tero Ryugo; Wang Changshun; Urisu Tsuneo

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂ as a reaction gas
J Synchrotron Rad 17, 69 (2010)
Institute for Molecular Science, Okazaki 444-8585, Japan
3.
2009

Asano Toshifumi; Nakamura Takuya; Wakahara Akihiro; Urisu Tsuneo

Noise Properties of Incubation-Type Planar Ion Channel Biosensor
Jpn. J. Appl. Phys., Part 1 48, 027001 (2009)
The Graduate University for Advanced Studies, Okazaki, Aichi 444-8585, Japan
4.
2006

Uno Hidetaka; Oiki Shigetoshi; Tagawa Seiichi; Seki Shu; Nakao Satoshi; Nonogaki Youichi; Tero Ryugo; Suzui Mitsukazu; Zhang Zheng Long; Urisu Tsuneo

Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
Jpn. J. Appl. Phys., Part 2 45, L1334 (2006)
Institute for Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan
5.
2006

Wang Changshun; Zhang Xiaoqiang; Urisu Tsuneo

Synchrotron-radiation-stimulated etching of SiO₂ thin films with a tungsten nano-pillar mask
J Synchrotron Rad 13, 432 (2006)
Department of Physics, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240, People's Republic of China
6.
2005

Nonogaki Y.; Urisu T.

Synchrotron radiation induced Si–H dissociation on H–Si(111)–;1×1; surfaces studied by in situ monitoring in the undulator-scanning tunneling microscope system
J. Vac. Sci. Technol. A 23, 1364 (2005)
Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
7.
2005

Rahman Md. Mashiur; Nonogaki Youichi; Tero Ryugo; Kim Yong-Hoon; Uno Hidetaka; Zhang Zheng-Long; Yano Takayuki; Aoyama Masaki; Sasaki Ryuichiro; Nagai Hiroyuki; Yoshida Makoto; Urisu Tsuneo

Giant Vesicle Fusion on Microelectrodes Fabricated by Femtosecond Laser Ablation Followed by Synchrotron Radiation Etching
Jpn. J. Appl. Phys., Part 2 44, L1207 (2005)
The Graduate University for Advanced Studies, Okazaki, Aichi 444-8585, Japan
8.
2004

Fujiki Satoshi; Kubozono Yoshihiro; Rikiishi Yoshie; Urisu Tsuneo

Scanning tunneling microscopy/spectroscopy studies of two isomers of Ce@;C82 on Si(111)-(7×7); surfaces
Phys. Rev. B 70, 235421 (2004)
Department of Structural Molecular Science, Graduate University for Advanced Studies, Okazaki 444-8585, Japan
9.
2004

Rahman Md. Mashiur; Tero Ryugo; Urisu Tsuneo

Shrinking of Spin‐On‐Glass Films Induced by Synchrotron Radiation and Its Application to Three‐Dimensional Microfabrications
Jpn. J. Appl. Phys., Part 1 43, 3941 (2004)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
10.
2004

Kim Yong-Hoon; Tero Ryugo; Takizawa Morio; Urisu Tsuneo

Characterization of Dipalmitoylphosphatidylcholine/Cholesterol Langmuir‐Blodgett Monolayers Investigated by Atomic Force Microscopy and Fourier Transform Infrared Spectroscopy
Jpn. J. Appl. Phys., Part 1 43, 3860 (2004)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
11.
2004

Nonogaki Y.; Katoh M.; Shigemasa E.; Matsushita K.; Suzui M.; Urisu T.

Design and Performance of Undulator Beamline (BL7U) for in‐situ Observation of Synchrotron Radiation Stimulated Etching by STM
AIP Conf. Proc. 705, 368 (2004)
Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
12.
2004

Li Yan Jun; Haruyama Yuichi; Nagata Toshi; Nagasawa Takayuki; Tero Ryugo; Urisu Tsuneo

Structure and Deposition Mechanism of 10-Undecenoic Acid Self-Assembled Layers on H-Si (111) Surfaces Studied by Atomic Force Microscopy and Fourier-Transform Infrared
Jpn. J. Appl. Phys., Part 1 43, 4591 (2004)
Department of Vacuum UV Photoscience, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
13.
2004

Fujiki Satoshi; Kubozono Yoshihiro; Hosokawa Tomoko; Kanbara Takayoshi; Fujiwara Akihiko; Nonogaki Youichi; Urisu Tsuneo

Scanning tunneling microscopy of Dy@;C82 and Dy@;C60 adsorbed on Si(111)-(7×7); surfaces
Phys. Rev. B 69, 045415 (2004)
Department of Structural Molecular Science, Graduate University for Advanced Studies, Okazaki 444-8585, Japan;
14.
2003

Wang Changshun; Urisu Tsuneo

Synchrotron Radiation Stimulated Etching of SiO2 Thin Films with a Co Contact Mask for the Area‐Selective Deposition of Self‐Assembled Monolayer
Jpn. J. Appl. Phys., Part 1 42, 4016 (2003)
Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
15.
2003

Yamamura Shusaku; Yamauchi Shouichi; Watanabe Satoru; Tabe Michiharu; Kasai Toshio; Nonogaki Youichi; Urisu Tsuneo

Fabrication of CoSi2‐Buried‐Metal‐Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer‐Bonding
Jpn. J. Appl. Phys., Part 1 42, 3942 (2003)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
16.
2003

Wang Changshun; Moré Sam Dylan; Wang Zhihong; Yamamura Shusaku; Nonogaki Yoichi; Urisu Tsuneo

Patterning SiO2 thin films using synchrotron radiation stimulated etching with a Co contact mask
J. Vac. Sci. Technol. B 21, 818 (2003)
Department of Vacuum UV Photoscience, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
17.
2002

Moré Sam Dylan; Graaf Harald; Baune Michael; Wang Changshun; Urisu Tsuneo

Influence of Substrate Roughness on the Formation of Aliphatic Self‐Assembled Monolayers (SAMs) on Silicon(100)
Jpn. J. Appl. Phys., Part 1 41, 4390 (2002)
Department of Vacuum UV Photoscience, Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
18.
2002

Wang Zhi-Hong; Noda Hideyuki; Nonogaki Youichi; Yabumoto Norikuni; Urisu Tsuneo

Hydrogen Diffusion and Chemical Reactivity with Water on Nearly Ideally H‐terminated Si(100) Surface
Jpn. J. Appl. Phys., Part 1 41, 4275 (2002)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444‐8585, Japan;
19.
2000

Noda Hideyuki; Urisu Tsuneo; Kobayashi Yoshihiro; Ogino Toshio

Initial Stage of Hydrogen Etching of Si Surfaces Investigated by Infrared Reflection Absorption Spectroscopy
Jpn. J. Appl. Phys., Part 1 39, 6985 (2000)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
20.
2000

Gao Y.; Mekaru H.; Miyamae T.; Urisu T.

Scanning tunneling microscopy study of surface morphology of Si(111) after synchrotron radiation stimulated desorption of SiO2
J. Vac. Sci. Technol. A 18, 1153 (2000)
Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
21.
2000

Gao Y.; Mekaru H.; Miyamae T.; Urisu T.

Scanning tunneling microscopy study of Si(111) surface morphology after removal of SiO2 by synchrotron radiation illumination
Appl. Phys. Lett. 76, 1392 (2000)
Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan;
22.
1999

Homma Yoshikazu; Finnie Paul; Ogino Toshio; Noda Hideyuki; Urisu Tsuneo

Aligned island formation using step-band networks on Si(111)
J. Appl. Phys. 86, 3083 (1999)
NTT Basic Research Laboratories, Atsugi, Kanagawa 243-0198, Japan;
23.
1999

Miyamae T.; Uchida H.; Munro I. H.; Urisu T.

Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy
J. Vac. Sci. Technol. A 17, 1733 (1999)
Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan;
24.
1999

Mekaru Harutaka; Tsusaka Yoshiyuki; Miyamae Takayuki; Kinoshita Toyohiko; Urisu Tsuneo; Masui Shin; Toyota Eijiro; Takenaka Hisataka

Construction of the multilayered-mirror monochromator beam line for the study of synchrotron radiation stimulated process
Rev. Sci. Instrum. 70, 2601 (1999)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan;
25.
1998

Hirano Shinya; Noda Hideyuki; Yoshigoe Akitaka; Gheyas Syed Irfan; Urisu Tsuneo

Annealing and synchrotron radiation irradiation effects on hydrogen terminated Si(100) surfaces investigated by infrared reflection absorption spectroscopy
Jpn. J. Appl. Phys., Part 1 37, 6991 (1998)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki, 444-8585, Japan
26.
1998

Hirano S.; Yoshigoe A.; Nagasono M.; Mase K.; Ohara J.; Nonogaki Y.; Takeda Y.; Urisu T.

Ultrahigh-Vacuum Reaction Apparatus to Study Synchrotron-Radiation-Stimulated Processes
J Synchrotron Rad 5, 1363 (1998)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
27.
1998

Gheyas Syed Irfan; Urisu Tsuneo; Hirano Shinya; Watanabe Hidekazu; Iwata Suehiro; Aoyagi Mutsumi; Nishio Mitsuhiro; Ogawa Hiroshi

Chemisorption of deuterium on an ultrathin Ge film deposited over Si(100)-2×1;; Existence of a dideuteride phase
Phys. Rev. B 58, 9949 (1998)
Department of Vacuum UV Photoscience, Institute for Molecular Science, Nishigonaka-38, Myodaiji Machi, Okazaki 444, Japan;
28.
1998

Mekaru Harutaka; Urisu Tsuneo; Tsusaka Yoshiyuki; Masui Shin; Toyota Eijiro; Takenaka Hisataka

Design and performance of a multilayered mirror monochromator in the low-energy region of the VUV
J Synchrotron Rad 5, 714 (1998)
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444, Japan
29.
1998

Mase Kazuhiko; Nagasono Mitsuru; Tanaka Shinichiro; Urisu Tsuneo; Ikenaga Eiji; Sekitani Tetsuji; Tanaka Kenichiro

Auger electron photoion coincidence technique combined with synchrotron radiation for the study of the ion desorption mechanism in the region of resonant transitions of condensed H2O
J. Chem. Phys. 108, 6550 (1998)
Institute for Molecular Science, Okazaki 444-8585, Japan;
30.
1997

Nagaoka Shin-ichi; Mase Kazuhiko; Nagasono Mitsuru; Tanaka Shin-ichiro; Urisu Tsuneo; Ohshita Joji

Site-specific fragmentation following Si:2p core-level photoionization of F3SiCH2CH2Si(CH3)3 condensed on a Au surface
J. Chem. Phys. 107, 10751 (1997)
Department of Chemistry, Faculty of Science, Ehime University, Matsuyama 790-8577, Japan
31.
1997

Mase Kazuhiko; Nagasono Mitsuru; Tanaka Shin-ichiro; Kamada Masao; Urisu Tsuneo; Murata Yoshitada

Development of electron-ion coincidence spectroscopy for the study of surface dynamics combined with synchrotron radiation
Rev. Sci. Instrum. 68, 1703 (1997)
Institute for Molecular Science, Okazaki 444, Japan
32.
1996

Urisu Tsuneo; Imaizumi Yoshiaki; Yoshigoe Akitaka

Synchrotron radiation stimulated materials processing and reaction mechanisms
Proc. SPIE Int. Soc. Opt. Eng. 2888, 159 (1996)
Institute for Molecular Science (Japan)
33.
1996

Park Young-Bae; Rhee Shi-Woo; Imaizumi Y.; Urisu T.

Structural changes of silicon dioxide films caused by synchrotron irradiation
J. Appl. Phys. 80, 1236 (1996)
Laboratory for Advanced Materials Processing (LAMP), Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790‐784, Korea;
34.
1995

Yoshigoe A.; Mase K.; Tsusaka Y.; Urisu T.; Kobayashi Y.; Ogino T.

In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si;2H6 gas source molecular beam epitaxy
Appl. Phys. Lett. 67, 2364 (1995)
The Graduate University for Advanced Studies, Institute for Molecular Science, 38 Myodaiji, Okazaki 444, Japan
35.
1995

Yoshigoe A.; Nagasono M.; Mase K.; Urisu T.; Seki S.; Nakagawa Y.

In Situ Detection of Surface SiH_n in Synchrotron-Radiation-Induced Chemical Vapor Deposition of a-Si on an SiO₂ Substrate
J Synchrotron Rad 2, 196 (1995)
36.
1995

Yamada Yoshiyasu; Hattori Tadashi; Urisu Tsuneo; Ohshima Hisayoshi

Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy
Appl. Phys. Lett. 66, 496 (1995)
Research Laboratories, Nippondenso Co., Ltd., 500‐1 Komenoki, Nisshin, Aichi 470‐01, Japan;
37.
1994

Urisu Tsuneo; Takahashi Junichi; Utsumi Yuichi; Akutsu Tetsuo; Kuchitsu Kozo

Synchrotron Radiation‐Assisted Si Epitaxial Growth Using ;Si2H6 and SiH2Cl2 Gases
J. Electrochem. Soc. 141, 1562 (1994)
NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan;
38.
1993

Akazawa Housei; Urisu Tsuneo; Utsumi Yuichi; Nagase Masao

Si crystal growth mediated by synchrotron‐radiation‐stimulated hydrogen desorption
Phys. Rev. B 47, 15946 (1993)
NTT LSI Laboratories, 3‐1, Morinosato‐Wakamiya, Atsugi, Kanagawa 243‐01, Japan;
39.
1993

Urisu Tsuneo; Akutsu Tetsuo; Kuchitsu Kozo

Synchrotron radiation assisted Si epitaxial growth: Comparison of growth characteristics between Si2H6 and SiH2Cl2 gases
Appl. Phys. Lett. 62, 2821 (1993)
NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan;
40.
1993

Utsumi Yuichi; Akazawa Housei; Nagase Masao; Urisu Tsuneo; Kawashima Izumi

Perfectly selective Si epitaxial growth due to synchrotron radiation irradiation during disilane molecular beam epitaxy
Appl. Phys. Lett. 62, 1647 (1993)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan;
41.
1993

Nagase Masao; Utsumi Yuichi; Akawaza Housei; Urisu Tsuneo

Oxygen desorption from molybdenum oxide by synchrotron radiation and its surface‐cleaning applications
Appl. Phys. Lett. 62, 234 (1993)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi, Kanagawa, 243‐01 Japan;
42.
1992

Akazawa H.; Takahashi J.; Utsumi Y.; Kawashima I.; Urisu T.

Role of hydrogen in synchrotron‐radiation‐stimulated evaporation of amorphous SiO;2 and microcrystalline Si
Appl. Phys. Lett. 60, 974 (1992)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugishi, Kanagawa, Japan;
43.
1991

Kyuragi Hakaru; Urisu Tsuneo

Synchrotron Radiation‐Excited Chemical Vapor Deposition of Silicon Nitride Films from a ;SiH4 + ;NH3 Gas Mixture
J. Electrochem. Soc. 138, 3412 (1991)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa‐prefecture, 243‐01 Japan;
44.
1991

Takahashi Jun-ichi; Utsumi Yuichi; Urisu Tsuneo

Material selectivity in synchrotron radiation‐stimulated etching of SiO;2 and Si
J. Appl. Phys. 70, 2958 (1991)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐Shi, Kanagawa 243‐01, Japan;
45.
1991

Utsumi Yuichi; Takahashi Jun-ichi; Urisu Tsuneo

Oxygen addition effects in synchrotron radiation excited etching using SF6
J. Vac. Sci. Technol. B 9, 2507 (1991)
NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa Pref., 243‐01 Japan;
46.
1991

Akazawa H.; Takahashi J.; Utsumi Y.; Kawashima I.; Urisu T.

Photostimulated evaporation of SiO2 and Si3N4 films by synchrotron radiation and its application for low‐temperature cleaning of Si surfaces
J. Vac. Sci. Technol. A 9, 2653 (1991)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa, Japan;
47.
1991

Takahashi Jun-ichi; Utsumi Yuichi; Akazawa Housei; Kawashima Izumi; Urisu Tsuneo

Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system
Appl. Phys. Lett. 58, 2776 (1991)
NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan;
48.
1990

Akazawa H.; Utsumi Y.; Takahashi J.; Urisu T.

Photostimulated evaporation of SiO2 films by synchrotron radiation
Appl. Phys. Lett. 57, 2302 (1990)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa, Japan;
49.
1990

Utsumi Yuichi; Kyuragi Hakaru; Urisu Tsuneo

Spatial period division with synchrotron radiation bandwidth control by W/Be multilayer mirror
J. Vac. Sci. Technol. B 8, 436 (1990)
NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa Pref., 243‐01 Japan;
50.
1989

Urisu Tsuneo; Kyuragi Hakaru; Utsumi Yuichi; Takahashi Jun-ichi; Kitamura Mamoru

Synchrotron radiation stimulated semiconductor processes: Chemical vapor deposition and etching
Rev. Sci. Instrum. 60, 2157 (1989)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa, Japan;
51.
1989

Takahashi Jun-ichi; Urisu Tsuneo; Maezawa Hideki

Soft x‐ray W/Be multilayer and its application to a diffraction grating Yuichi,Utsumi
Rev. Sci. Instrum. 60, 2024 (1989)
NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐Shi, Kanagawa 243‐01, Japan;
52.
1989

Kitamura Mamoru; Akiya Hideo; Urisu Tsuneo

Polymer deposition and etching mechanisms in C2F6 radio‐frequency plasma as studied by laser‐induced fluorescence
J. Vac. Sci. Technol. B 7, 14 (1989)
NTT Electrical Communications Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐Shi, Kanagawa 243‐01, Japan;
53.
1988

Utsumi Yuichi; Kyuragi Hakaru; Urisu Tsuneo; Maezawa Hideki

Tungsten–beryllium multilayer mirrors for soft x rays
Appl. Opt. 27, 3933 (1988)
NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan;
54.
1987

Urisu Tsuneo; Kyuragi Hakaru

Synchrotron radiation‐excited chemical‐vapor deposition and etching
J. Vac. Sci. Technol. B 5, 1436 (1987)
NTT Electrical Communications Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa Pref., 243‐01 Japan;
55.
1987

Kyuragi Hakaru; Urisu Tsuneo

Synchrotron radiation‐induced etching of a carbon film in an oxygen gas
Appl. Phys. Lett. 50, 1254 (1987)
NTT Electrical Communications Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐Shi, Kanagawa Prefecture 243‐01, Japan;
56.
1987

Kyuragi Hakaru; Urisu Tsuneo

Synchrotron radiation‐excited chemical vapor deposition of Si;xNyHz film
J. Appl. Phys. 61, 2035 (1987)
NTT Electrical Communications Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐Shi, Kanagawa Pref., 243‐01 Japan;
57.
1985

Kyuragi Hakaru; Urisu Tsuneo

Higher‐order suppressed phase zone plates
Appl. Opt. 24, 1139 (1985)
NT&T Atsugi Electrical Communication Laboratory, 1839, Ono, Atsugi‐shi, Kanagawa 243, Japan;
58.
1985

Urisu Tsuneo; Mizushima Yoshihiko

Transient pulse buildup mechanisms in a synchronously‐pumped mode‐locked dye laser
J. Appl. Phys. 57, 1518 (1985)
Atsugi Electrical Communication Laboratory, NTT, Atsugi‐shi Ono 1839, Japan;
59.
1984

Urisu Tsuneo; Mizushima Yoshihiko

Cavity length detuning properties in synchronous mode locking
J. Appl. Phys. 56, 696 (1984)
Atsugi Electrical Communication Laboratory, NTT, Ono, Atsugi‐shi, Kanagawa, 243‐01 Japan;
60.
1983

Yamada Syoji; Urisu Tsuneo; Sugeta Takayuki; Mizushima Yoshihiko

First order optoelectronic correlation utilizing metal‐semiconductor‐metal photodetectors
Appl. Phys. Lett. 42, 482 (1983)
Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation 3‐9‐11, Midoricho, Musashino‐shi, Tokyo, 180 Japan;
61.
1981

Urisu Tsuneo; Sugeta Takayuki; Mizushima Yoshihiko; Tsunenari Kinji

Stabilized injection locking light amplification of a 1.15‐μm He‐Ne laser
J. Appl. Phys. 52, 3154 (1981)
Musashino Electrical Communication Laboratory, NTT, Musashino, Tokyo, Japan
62.
1981

Urisu Tsuneo; Sugeta Takayuki; Mizushima Yoshihiko

Liquid crystal display device for total reflection switching with fluorescent dye addition
Appl. Opt. 20, 633 (1981)
Nippon Telegraph & Telephone Public Corporation, Electrical Communication Laboratories, Musashino‐shi, Tokyo, Japan;
63.
1980

Mizushima Y.; Sugeta T.; Urisu T.; Nishihara H.; Koyama J.

Ultralow loss waveguide for long distance transmission
Appl. Opt. 19, 3259 (1980)
Nippon Telegraphy & Telephone Public Corporation, Electrical Communication Laboratories, Musashino‐shi, Tokyo, 180, Japan;
64.
1980

Urisu Tsuneo; Sugeta Takayuki; Mizushima Yoshihiko

Effects of dc electric fields on a dye laser amplifier
J. Appl. Phys. 51, 904 (1980)
Musashino Electrical Communication Laboratory, NTT, Musashino, Tokyo, Japan

Co-authors

Co-publications
10

Utsumi, Yuichi
9

Nonogaki, Youichi
8

Kyuragi, Hakaru
7

Tero, Ryugo
6

Wang, Changshun
6

Akazawa, Housei
5

Nagasono, Mitsuru
4

Mekaru, Harutaka
4

Miyamae, Takayuki
4

Yoshigoe, Akitaka
3

Ogino, Toshio
3

Nagase, Masao
3

Noda, Hideyuki
3

Tsusaka, Yoshiyuki
2

Rahman, Md. Mashiur