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Cahen, David

Computed

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Research Profile

Latest Publications

1.
2010

Vilan Ayelet; Cahen David

Molecular Electronics—Current Challenges
AIP Conf. Proc. 1313, 30 (2010)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
2.
2009

Häming M.; Reinert F.; Schöll A.; Kahn A.; Cahen D.; Seitz O.; Salomon E.; Ziroff J.; Umbach E.

Electronic band structure and ensemble effect in monolayers of linear molecules investigated by photoelectron spectroscopy
Phys. Rev. B 79, 155418 (2009)
Universität Würzburg, Experimentelle Physik II, 97074 Würzburg, Deutschland;
3.
2009

Har-Lavan Rotem; Ron Izhar; Thieblemont Florent; Cahen David

Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si
Appl. Phys. Lett. 94, 043308 (2009)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel

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All Publications

1.
2010

Vilan Ayelet; Cahen David

Molecular Electronics—Current Challenges
AIP Conf. Proc. 1313, 30 (2010)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
2.
2009

Häming M.; Reinert F.; Schöll A.; Kahn A.; Cahen D.; Seitz O.; Salomon E.; Ziroff J.; Umbach E.

Electronic band structure and ensemble effect in monolayers of linear molecules investigated by photoelectron spectroscopy
Phys. Rev. B 79, 155418 (2009)
Universität Würzburg, Experimentelle Physik II, 97074 Würzburg, Deutschland;
3.
2009

Har-Lavan Rotem; Ron Izhar; Thieblemont Florent; Cahen David

Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si
Appl. Phys. Lett. 94, 043308 (2009)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel
4.
2009

Rühle Sven; Segal Akiba; Vilan Ayelet; Kurtz Sarah R.; Grinis Larissa; Zaban Arie; Lubomirsky Igor; Cahen David

A two junction, four terminal photovoltaic device for enhanced light to electric power conversion using a low-cost dichroic mirror
J. Renewable Sustainable Energy 1, 013106 (2009)
Department of Chemistry, Bar-Ilan University, Ramat Gan 52900, Israel
5.
2006

Segev Lior; Salomon Adi; Natan Amir; Cahen David; Kronik Leeor; Amy Fabrice; Chan Calvin K.; Kahn Antoine

Electronic structure of Si(111)-bound alkyl monolayers: Theory and experiment
Phys. Rev. B 74, 165323 (2006)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel
6.
2005

Salomon Adi; Boecking Till; Chan Calvin K.; Amy Fabrice; Girshevitz Olga; Cahen David; Kahn Antoine

How Do Electronic Carriers Cross Si-Bound Alkyl Monolayers?
Phys. Rev. Lett. 95, 266807 (2005)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
7.
2005

Haick Hossam; Ghabboun Jamal; Cahen David

Pd versus Au as evaporated metal contacts to molecules
Appl. Phys. Lett. 86, 042113 (2005)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
8.
2004

Rühle Sven; Cahen David

Contact-free photovoltage measurements of photoabsorbers using a Kelvin probe
J. Appl. Phys. 96, 1556 (2004)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
9.
2003

Visoly-Fisher Iris; Cohen Sidney R.; Cahen David; Ferekides Christos S.

Electronically active layers and interfaces in polycrystalline devices: Cross-section mapping of CdS/CdTe solar cells
Appl. Phys. Lett. 83, 4924 (2003)
Weizmann Institute of Science, Rehovoth, 76100 Israel;
10.
2003

Salomon Adi; Berkovich Dvora; Cahen David

Molecular modification of an ionic semiconductor–metal interface; ZnO/molecule/Au diodes
Appl. Phys. Lett. 82, 1051 (2003)
Weizmann Institute of Science, Rehovot, Israel 76100;
11.
2003

Visoly-Fisher Iris; Cohen Sidney R.; Cahen David

Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements
Appl. Phys. Lett. 82, 556 (2003)
Weizmann Institute of Science, Rehovoth, 76100 Israel;
12.
2002

Lyahovitskaya V.; Feldman Y.; Gartsman K.; Cohen H.; Cytermann C.; Cahen David

Na effects on CuInSe2: Distinguishing bulk from surface phenomena
J. Appl. Phys. 91, 4205 (2002)
Weizmann Institute of Science, Rehovot 76100, Israel;
13.
2001

Gartsman Konstantin; Cahen David; Scheer Roland

Electric field-induced junctions in epitaxial layers of CuInSe2
Appl. Phys. Lett. 79, 2919 (2001)
Weizmann Institute of Science, Rehovot, 76100, Israel
14.
2000

Lyahovitskaya V.; Chernyak L.; Kaplan L.; Greenberg J.; Cahen David

Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry
J. Appl. Phys. 88, 3976 (2000)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel;
15.
1999

Bastide S.; Gal D.; Cahen David; Kronik L.

Surface photovoltage measurements in liquids
Rev. Sci. Instrum. 70, 4032 (1999)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel
16.
1999

Rau U.; Braunger D.; Herberholz R.; Schock H. W.; Guillemoles J.-F.; Kronik L.; Cahen David

Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices
J. Appl. Phys. 86, 497 (1999)
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569, Stuttgart, Germany;
17.
1999

Richter Shachar; Manassen Yishay; Cahen David

Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures
Phys. Rev. B 59, 10877 (1999)
The Weizmann Institute of Science, Rehovot 76100, Israel
18.
1999

Lubomirsky I.; Cahen D.

Erratum:“Chemical Limit to Semiconductor Device Miniaturization” [Electrochem. Solid‐State Lett., ;2, 154 (1999)]
Electrochem. Solid-State Lett. 2, 205 (1999)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
19.
1998

Varsano Francesca; Guillemoles Jean François; Decker Franco; Cahen David; Masetti Enrico

Ion Potential Diagrams for Electrochromic Devices
J. Electrochem. Soc. 145, 4212 (1998)
Department of Materials and Interfaces, Weizmann Institute of Science, 76100 Rehovot, Israel
20.
1998

Richter Shachar; Cahen David; Cohen Sidney R.; Gartsman Konstantin; Lyakhovitskaya Vera; Manassen Yishay

Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy
Appl. Phys. Lett. 73, 1868 (1998)
Weizmann Institute of Science, 76100 Rehovot, Israel;
21.
1998

Lubomirsky Igor; Gartsman Konstantin; Cahen David

Space charge effects on dopant diffusion coefficient measurements in semiconductors
J. Appl. Phys. 83, 4678 (1998)
Weizmann Institute of Science, Rehovot, 76100, Israel
22.
1997

Gartsman Konstantin; Skoryatina Elena; Malkovich Roald; Kozlovsky Vitaliy; Didik Vladimir; Cahen David; Lyahovitskaya Vera; Chernyak Leonid; Usacheva Valentina

Direct evidence for diffusion and electromigration of Cu in CuInSe2
J. Appl. Phys. 82, 4282 (1997)
Weizmann Institute of Science, Rehovot, Israel 76100
23.
1997

Riess I.; Cahen D.

Analysis of light emitting polymer electrochemical cells
J. Appl. Phys. 82, 3147 (1997)
Physics Department, Technion-Israel Institute of Technology, Haifa 32 000, Israel;
24.
1997

Lyubomirsky Igor; Rabinal M. K.; Cahen David

Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift
J. Appl. Phys. 81, 6684 (1997)
Department of Materials & Interfaces, Weizmann Institute of Science, Rehovot-76 100, Israel;
25.
1997

Lyubomirsky Igor; Lyahovitskaya Vera; Cahen David

Dopant accumulation during substitutional–interstitial diffusion in semiconductors
Appl. Phys. Lett. 70, 613 (1997)
Department of Materials and Interfaces, Weizmann Institute of Science, 76100 Rehovot, Israel
26.
1996

Chernyak Leonid; Lyakhovitskaya Vera; Richter Shachar; Jakubowicz Abram; Manassen Yishay; Cohen Sidney R.; Cahen David

Electronic effects of ion mobility in semiconductors: Mixed electronic–ionic behavior and device creation in Si;Li
J. Appl. Phys. 80, 2749 (1996)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
27.
1996

McAlpine N. S.; McConville P.; Haneman D.; Chernyak L.; Cahen D.

Junction sharpness in field‐induced transistor structures in Cu;xAg1-;xInSe2
J. Appl. Phys. 79, 7370 (1996)
School of Physics, University of New South Wales, Sydney 2052, Australia
28.
1996

Gal D.; Beier J.; Moons E.; Hodes G.; Cahen D.; Kronik L.; Burstein L.; Mishori B.; Leibovitch M.; Shapira Y.; Hariskos D.; Klenk R.; Schock H.-W.

Band diagram and band line‐up of the polycrystalline CdS/Cu(In,Ga)Se;2 heterojunction and its response to air annealing
AIP Conf. Proc. 353, 453 (1996)
Department of Materials and Interfaces, Weizmann Institute of Science, 76100 Rehovoth, Israel
29.
1995

Lyubomirsky Igor; Lyakhovitskaya Vera; Triboulet Robert; Cahen David

Self‐restoration of ;p‐n; junctions in (Hg,Cd)Te
Appl. Phys. Lett. 67, 3132 (1995)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76100 Israel
30.
1995

Kronik L.; Burstein L.; Leibovitch M.; Shapira Yoram; Gal D.; Moons E.; Beier J.; Hodes G.; Cahen David; Hariskos D.; Klenk R.; Schock H.-W.

Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction
Appl. Phys. Lett. 67, 1405 (1995)
Department of Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel;
31.
1995

Chernyak Leonid; Lyakhovitskaya Vera; Cahen David

Low temperature device creation in Si via fast Li electromigration
Appl. Phys. Lett. 66, 709 (1995)
Department of Materials & Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel;
32.
1994

Chernyak Leonid; Cahen David; Zhao S.; Haneman D.

Local temperature increases during electric‐field‐induced transistor formation in CuInSe;2
Appl. Phys. Lett. 65, 427 (1994)
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
33.
1993

Siripala Withana; Vedel Jacques; Lincot Daniel; Cahen David

Band edge shifts of p‐type copper indium diselenide electrodes in aqueous electrolytes
Appl. Phys. Lett. 62, 519 (1993)
Laboratoire d’Electrochimie Analytique et Appliquée, Unité Associée au C.N.R.S 216, Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France;
34.
1992

Gartsman Konstantin; Chernyak Leonid; Gilet Jean Marc; Cahen David; Triboulet Robert

Room temperature, local tailoring of electronic properties of Hg0.3Cd0.7Te by applying an external electric field
Appl. Phys. Lett. 61, 2428 (1992)
Department of Materials and Interfaces, Weizmann Institute of Science, 76100 Rehovot Israel
35.
1990

Büchner Bettine; Flaisher Harvey; Wolf Martin; Cahen David

Electrothermal measurements: A calorimetric method to examine power dissipation in photovoltaic devices
J. Appl. Phys. 67, 4338 (1990)
Department of Structural Chemistry and Center for Energy Research, Weizmann Institute of Science, Rehovot 76100, Israel
36.
1990

Flaisher Harvey; Wolf Martin; Cahen David

Erratum: ‘‘Quantitative separation of mechanisms for power dissipation in solar cells by photoacoustic and photovoltaic measurements’’ [J. Appl. Phys. ;66, 1832 (1989)]
J. Appl. Phys. 67, 2189 (1990)
Department of Structural Chemistry, the Weizmann Institute of Science, Rehovot 76100, Israel
37.
1989

Margulis Lev; Hodes Gary; Jakubowicz Abram; Cahen David

Aggregate structure in CuBSe2/Mo films (B=In,Ga): Its relation to their electrical activity
J. Appl. Phys. 66, 3554 (1989)
The Weizmann Institute of Science, Rehovot 76100, Israel
38.
1989

Flaisher Harvey; Wolf Martin; Cahen David

Quantitative separation of mechanisms for power dissipation in solar cells by photoacoustic and photovoltaic measurements
J. Appl. Phys. 66, 1832 (1989)
Department of Structural Chemistry, the Weizmann Institute of Science, Rehovot 76100, Israel
39.
1989

Matson R. J.; Kazmerski L. L.; Noufi R.; Cahen David

Electron stimulated desorption of oxygen from, and subsequent type conversion of, thin‐film ;p‐CuInSe;2
J. Vac. Sci. Technol. A 7, 230 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
40.
1989

Cahen David; Noufi Rommel

Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performance
Appl. Phys. Lett. 54, 558 (1989)
Structural Chemistry Department, Weizmann Institute of Science, Rehovot 76100, Israel
41.
1988

Dagan Geula; Cahen David; Nelson Arthur J.

n‐;AgInSe2/;Polyiodide and ‐Polysulfide Photoelectrochemical Cells
J. Electrochem. Soc. 135, 104 (1988)
Department of Structural Chemistry, Weizmann Institute of Science, Rehovot 76100, Israel
42.
1987

Dagan Geulah; Cahen David

Ternary Chalcogenide‐Based Photoelectrochemical Cells
J. Electrochem. Soc. 134, 592 (1987)
Department of Structural Chemistry, The Weizmann Institute of Science, Rehovot 76100, Israel
43.
1987

Matson R. J.; Noufi R.; Bachmann K. J.; Cahen D.

CdS induced homojunction formation in crystalline p‐CuInSe;2
Appl. Phys. Lett. 50, 158 (1987)
Solar Energy Research Institute, Golden, Colorado 80401
44.
1986

Cahen David; Nordal Per-Erik; Kanstad Svein Otto

Injected current‐related distortion of photothermal signals from a photovoltaic cell
Appl. Phys. Lett. 49, 1351 (1986)
The Weizmann Institute of Science, Rehovot, Israel 76100
45.
1986

Cahen David; Wood Elizabeth A.; Vonnegut Bernard; Vonnegut Kurt

Cat's Cradle; and Ice‐Nine
Phys. Today 39, 11 (1986)
Weizmann Institute of Science, Rehovot, Israel
46.
1986

Dagan Geulah; Cahen David

Photoelectrochemical Activity of n‐;AgInSe2/;Polyiodide Junctions
J. Electrochem. Soc. 133, 1533 (1986)
Department of Structural Chemistry, The Weizmann Institute of Science, Rehovot, Israel 76100
47.
1986

Shen Wu-mian; Aurian-Blajeni Benedict; Tomkiewicz Micha; Cahen David

Dielectric Properties of the Interfacial Layer on n‐;CulnSe2 in Photoelectrochemical Solar Cells
J. Electrochem. Soc. 133, 930 (1986)
Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210
48.
1986

Shen Wu-Mian; Tomkiewicz Micha; Cahen David

Impedance Study of Surface Optimization of n‐;CuInSe2 in Photoelectrochemical Solar Cells
J. Electrochem. Soc. 133, 112 (1986)
Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210
49.
1986

Shen Wu-Mian; Siripala Withana; Tomkiewicz Micha; Cahen David

Electrolyte Electroreflectance Study of Surface Optimization of n‐;CuInSe2 in Photoelectrochemical Solar Cells
J. Electrochem. Soc. 133, 107 (1986)
Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210
50.
1985

Cahen David; Ireland P. J.; Kazmerski L. L.; Thiel F. A.

X‐ray photoelectron and Auger electron spectroscopic analysis of surface treatments and electrochemical decomposition of CuInSe;2 photoelectrodes
J. Appl. Phys. 57, 4761 (1985)
Solar Energy Research Institute, Golden, Colorado 80401
51.
1985

Mirovsky Yehudit; Cahen David; Tenne Reshef; Sawatzky George; Polak Micha

Ternary Chalcogenide‐Based Photoelectrochemical Cells
J. Electrochem. Soc. 132, 1070 (1985)
The Weizmann Institute of Science, Rehovot 76100, Israel
52.
1985

Cahen David; Dagan Geulah; Mirovsky Yehudith; Hodes Gary; Giriat Witold; Lubke Margot

Ternary Chalcogenide‐Based Photoelectrochemical Cells
J. Electrochem. Soc. 132, 1062 (1985)
Department of Structural Chemistry, The Weizmann Institute of Science, Rehovot 76100, Israel
53.
1985

Licht Stuart; Tenne Reshef; Dagan Geulah; Hodes Gary; Manassen Joost; Cahen David; Triboulet Robert; Rioux Jacques; Levy-Clement Claude

High efficiency n‐Cd(Se,Te)/S;=photoelectrochemical cell resulting from solution chemistry control
Appl. Phys. Lett. 46, 608 (1985)
Weizmann Institute of Science, Rehovot 76100, Israel
54.
1985

Cahen David; Halle Scott D.

Photoacoustic calorimetry of photovoltaic cells: Use of phase shifts to indicate thermal loss mechanisms
Appl. Phys. Lett. 46, 446 (1985)
Department of Structural Chemistry, The Weizmann Institute of Science, Rehovot 76100, Israel
55.
1984

Cahen David; Chen Yih-Wen

n‐CuInSe;2 based photoelectrochemical cells; Improved, stable performance in aqueous polyiodide through rational surface and solution modifications
Appl. Phys. Lett. 45, 746 (1984)
Solar Energy Research Institute, Golden, Colorado 80401
56.
1983

Hodes Gary; Cahen David; Leamy Harry J.

Effect of photoelectrochemical etching on charge collection efficiency in CdS: An electron beam induced current study
J. Appl. Phys. 54, 4676 (1983)
The Weizmann Institute of Science, Rehovot, Israel 76100
57.
1982

Tenne Reshef; Mirovsky Yehudith; Greenstein Ya'acov; Cahen David

Ternary Chalcogenide‐Based Photoelectrochemical Cells
J. Electrochem. Soc. 129, 1506 (1982)
Department of Plastics Research and Structural Chemistry, The Weizmann Institute of Science, Rehovot 76100, Israel
58.
1982

Mirovsky Yehudith; Cahen David

n‐CuInSe;2/polysulfide photoelectrochemical solar cells
Appl. Phys. Lett. 40, 727 (1982)
Department of Structural Chemistry, The Weizmann Institute of Science, Rehovot, 76100, Israel
59.
1981

Hodes Gary; Manassen Joost; Cahen David

Effect of Surface Etching and Morphology on the Stability of CdSe/;Sx^=; Photoelectrochemical Cells
J. Electrochem. Soc. 128, 2325 (1981)
Department of Plastics Research, The Weizmann Institute of Science, Rehovot, Israel
60.
1981

Cahen David

Photoacoustic cell for reflection and transition measurements
Rev. Sci. Instrum. 52, 1306 (1981)
Department of Structural Chemistry, The Weizmann Institute of Science, Rehovot, Israel 76100
61.
1981

Cahen David; Vainas Baruch; Vandenberg Joka M.

Changes in Surface Crystallinity and Morphology of CdS and CdSe Photoelectrodes upon Use in Polysulfide Electrolyte
J. Electrochem. Soc. 128, 1484 (1981)
Weizmann Institute of Science, Rehovot, Israel 76100
62.
1981

Vainas B.; Hodes G.; Manassen J.; Cahen D.

Activation analysis of forward‐biased CdS‐electrolyte diode
Appl. Phys. Lett. 38, 458 (1981)
Department of Plastics Research,The Weizmann Institute of Science, Rehovot, Israel
63.
1980

Hodes Gary; Manassen Joost; Cahen David; David Monica

Painted, Polycrystalline Thin Film Photoelectrodes for Photoelectrochemical Solar Cells
J. Electrochem. Soc. 127, 2252 (1980)
The Weizmann Institute of Science, Rehovot, Israel
64.
1980

Avigal Yitzhak; Cahen David; Hodes Gary; Manassen Joost; Vainas Baruch; Gibson R. A. G.

Photoelectrochemistry of Hydrogenated Amorphous Silicon (a‐Si;H)
J. Electrochem. Soc. 127, 1209 (1980)
The Weizmann Institute of Science, Rehovot, Israel
65.
1980

Hodes Gary; Manassen Joost; Cahen David

Electrocatalytic Electrodes for the Polysulfide Redox System
J. Electrochem. Soc. 127, 544 (1980)
Plastics Research Department, The Weizmann Institute of Science, Rehovot, Israel

Co-authors

Co-publications
7

Chernyak, Leonid
5

Kronik, Leeor
4

Cohen, Sidney R.
3

Gal, Dori
3

Manassen, Yishay
3

Salomon, Adi
3

Schock, H.-W.
3

Kahn, Antoine
3

Noufi, Rommel
2

Moons, Ellen
2

Haneman, D
2

Guillemoles, Jean-François
2

Kazmerski, LL
2

Shapira, Yoram
2

Lyahovitskaya, Vera