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Rohatgi, Ajeet

Computed

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Research Profile

Latest Publications

1.
2011

Kang Moon Hee; Hong Junegie; Cooper Ian; Ebong Abasifreke; Rounsaville Brian; Rohatgi Ajeet

Reduction in Light Induced Degradation (LID) in B-doped Cz-Si Solar Cells with SiCxNy Antireflection (AR) Coating
J. Electrochem. Soc. 158, H724 (2011)
University Center of Excellence for Photovoltaics Research and Education, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
2.
2011

Peng Chao; Zhang Haoxiang; Stavola Michael; Yelundur Vijay; Rohatgi Ajeet; Carnel Lode; Seacrist Mike; Kalejs Juris

Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials
J. Appl. Phys. 109, 053517 (2011)
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
3.
2010

Das A.; Kim D. S.; Nakayashiki K.; Rounsaville B.; Meemongkolkiat V.; Rohatgi A.

Boron Diffusion with Boric Acid for High Efficiency Silicon Solar Cells
J. Electrochem. Soc. 157, H684 (2010)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA

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All Publications

1.
2011

Kang Moon Hee; Hong Junegie; Cooper Ian; Ebong Abasifreke; Rounsaville Brian; Rohatgi Ajeet

Reduction in Light Induced Degradation (LID) in B-doped Cz-Si Solar Cells with SiCxNy Antireflection (AR) Coating
J. Electrochem. Soc. 158, H724 (2011)
University Center of Excellence for Photovoltaics Research and Education, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
2.
2011

Peng Chao; Zhang Haoxiang; Stavola Michael; Yelundur Vijay; Rohatgi Ajeet; Carnel Lode; Seacrist Mike; Kalejs Juris

Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials
J. Appl. Phys. 109, 053517 (2011)
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
3.
2010

Das A.; Kim D. S.; Nakayashiki K.; Rounsaville B.; Meemongkolkiat V.; Rohatgi A.

Boron Diffusion with Boric Acid for High Efficiency Silicon Solar Cells
J. Electrochem. Soc. 157, H684 (2010)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
4.
2010

Das A.; Rohatgi A.

Optical and Electrical Characterization of Silver Microflake Colloid Films
J. Electrochem. Soc. 157, H301 (2010)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
5.
2009

Kleekajai S.; Wen L.; Peng C.; Stavola M.; Yelundur V.; Nakayashiki K.; Rohatgi A.; Kalejs J.

Infrared study of the concentration of H introduced into Si by the postdeposition annealing of a SiNx coating
J. Appl. Phys. 106, 123510 (2009)
Department of Physics and The Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015, USA
6.
2009

Kang M. H.; Kim D. S.; Ebong A.; Rounsaville B.; Rohatgi A.; Okoniewska G.; Hong J.

The Study of Silane-Free SiCxNy Film for Crystalline Silicon Solar Cells
J. Electrochem. Soc. 156, H495 (2009)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
7.
2008

Sheoran Manav; Kim Dong Seop; Rohatgi Ajeet; Dekkers H. F. W.; Beaucarne G.; Young Matthew; Asher Sally

Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature
Appl. Phys. Lett. 92, 172107 (2008)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
8.
2006

Kleekajai S.; Jiang F.; Stavola Michael; Yelundur V.; Nakayashiki K.; Rohatgi A.; Hahn G.; Seren S.; Kalejs J.

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells
J. Appl. Phys. 100, 093517 (2006)
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015 and the Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015
9.
2006

Kim D. S.; Hilali M. M.; Rohatgi A.; Nakano K.; Hariharan A.; Matthei K.

Development of a Phosphorus Spray Diffusion System for Low-Cost Silicon Solar Cells
J. Electrochem. Soc. 153, A1391 (2006)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
10.
2006

Meemongkolkiat Vichai; Nakayashiki Kenta; Kim Dong Seop; Kopecek Radovan; Rohatgi Ajeet

Factors Limiting the Formation of Uniform and Thick Aluminum–Back-Surface Field and Its Potential
J. Electrochem. Soc. 153, G53 (2006)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
11.
2006

Hilali Mohamed M.; Kim Steve; Nakayashiki Kenta; Khadilkar Chandra; Reedy Robert C.; Rohatgi Ajeet; Shaikh Aziz; Sridharan Srinivasan

Effect of Ag Particle Size in Thick-Film Ag Paste on the Electrical and Physical Properties of Screen Printed Contacts and Silicon Solar Cells
J. Electrochem. Soc. 153, A5 (2006)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
12.
2005

Hilali Mohamed M.; Al-Jassim Mowafak M.; To Bobby; Moutinho Helio; Rohatgi Ajeet; Asher Sally

Understanding the Formation and Temperature Dependence of Thick-Film Ag Contacts on High-Sheet-Resistance Si Emitters for Solar Cells
J. Electrochem. Soc. 152, G742 (2005)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
13.
2005

Rohatgi Ajeet; Upadhyaya Ajay; Sheoran Manav

Erratum: “High-efficiency screen-printed belt co-fired solar cells on cast multicrystalline silicon” [Appl. Phys. Lett. ;86, 054103 (2005)]
Appl. Phys. Lett. 86, 149901 (2005)
University Center of Excellence for Photovoltaics Research and Education (UCEP), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250
14.
2005

Upadhyaya Ajay; Sheoran Manav; Rohatgi Ajeet

High-efficiency screen-printed belt co-fired solar cells on cast multicrystalline silicon
Appl. Phys. Lett. 86, 054103 (2005)
University Center of Excellence for Photovoltaics Research and Education (UCEP), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250
15.
2005

Nakayashiki Kenta; Rohatgi Ajeet; Ostapenko Sergei; Tarasov Igor

Minority-carrier lifetime enhancement in edge-defined film-fed grown Si through rapid thermal processing-assisted reduction of hydrogen-defect dissociation
J. Appl. Phys. 97, 024504 (2005)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
16.
2004

Tarasov I.; Ostapenko S.; Nakayashiki K.; Rohatgi A.

Defect passivation in multicrystalline silicon for solar cells
Appl. Phys. Lett. 85, 4346 (2004)
University of South Florida, 4202 E. Fowler Avenue, Tampa, Florida 33620
17.
2004

Rohatgi Ajeet; Hilali Mohamed M.; Nakayashiki Kenta

High-efficiency screen-printed solar cell on edge-defined film-fed grown ribbon silicon through optimized rapid belt co-firing of contacts and high-sheet-resistance emitter
Appl. Phys. Lett. 84, 3409 (2004)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250;
18.
2004

Rohatgi A.; Kim D. S.; Nakayashiki K.; Yelundur V.; Rounsaville B.

High-efficiency solar cells on edge-defined film-fed grown (18.2%) and string ribbon (17.8%) silicon by rapid thermal processing
Appl. Phys. Lett. 84, 145 (2004)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332;
19.
2003

Jiang Fan; Stavola Michael; Rohatgi A.; Kim D.; Holt J.; Atwater H.; Kalejs J.

Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si
Appl. Phys. Lett. 83, 931 (2003)
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015;
20.
2003

Rohatgi Ajeet; Jeong Ji-Weon

High-efficiency screen-printed silicon ribbon solar cells by effective defect passivation and rapid thermal processing
Appl. Phys. Lett. 82, 224 (2003)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332;
21.
2000

Jeong Ji-Weon; Rosenblum Mark D.; Kalejs Juris P.; Rohatgi Ajeet

Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon
J. Appl. Phys. 87, 7551 (2000)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332;
22.
1999

Ebong A.; Doshi P.; Narashimha S.; Rohatgi A.; Wang J.; El-Sayed M. A.

The Effect of Low and High Temperature Anneals on the Hydrogen Content and Passivation of Si Surface Coated with SiO2 and SiN Films
J. Electrochem. Soc. 146, 1921 (1999)
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering
23.
1999

Rohatgi A.; Narasimha S.; Doshi P.; Ebong A.; Moschner J.

Rapid thermal processing and screen-printing for low cost silicon solar cells
AIP Conf. Proc. 462, 354 (1999)
University Center of Excellence for Photovoltaics Research and Education, Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250;
24.
1999

Krygowski Thomas W.; Rohatgi Ajeet; Selzer Timothy

A Novel Processing Technology for High‐Efficiency Silicon Solar Cells
J. Electrochem. Soc. 146, 1141 (1999)
Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America
25.
1998

Cai L.; Rohatgi A.; Han S.; May G.; Zou M.

Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation
J. Appl. Phys. 83, 5885 (1998)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
26.
1998

Narasimha S.; Rohatgi A.

Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/plasma silicon nitride stack
Appl. Phys. Lett. 72, 1872 (1998)
Department of Electrical and Computer Engineering, University Center of Excellence for Photovoltaics Research and Education, Georgia Institute of Technology, Atlanta, Georgia 30332-0250;
27.
1997

Doshi Parag; Jellison Gerald E.; Rohatgi Ajeet

Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics
Appl. Opt. 36, 7826 (1997)
University Center of Excellence for Photovoltaics Research and Education, Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
28.
1997

Ratakonda D.; Mejia J.; Rohatgi A.; Vedula L.; Singh R.; Narayanan S.

Rapid Thermal Processing of Screen Printed Ohmic Contacts
J. Electrochem. Soc. 144, 3237 (1997)
Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29631‐0915;
29.
1997

Rohatgi A.; Doshi P.; Krygowski T.

Pushing the frontiers of silicon PV technologies: Novel approaches to high-efficiency, manufacturable silicon cells
AIP Conf. Proc. 404, 109 (1997)
University Center for Excellence in Photovoltaic Research and Education Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250;
30.
1997

Singh R.; Cherukuri K. C.; Vedula L.; Rohatgi A.; Narayanan S.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing
Appl. Phys. Lett. 70, 1700 (1997)
Department of Electrical and Computer Engineering and Materials Science and Engineering Program, Clemson University, Clemson, South Carolina 29634-0915
31.
1997

Rohatgi A.; Narasimha S.; Cai L.

Gettering and passivation of high efficiency multicrystalline silicon solar cells
AIP Conf. Proc. 394, 199 (1997)
University Center for Excellence in Photovoltaic Research and Education, Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250
32.
1997

Krygowski Thomas; Rohatgi Ajeet

A Novel Approach Toward the Simultaneous Diffusion of Boron and Phosphorus in Silicon
J. Electrochem. Soc. 144, 346 (1997)
Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332‐0250;
33.
1996

Cai L.; Yang D.; Rohatgi A.; El-Sayed M. A.

Effects of rapid thermal anneal on refractive index and hydrogen content of plasma‐enhanced chemical vapor deposited silicon nitride films
J. Appl. Phys. 80, 5384 (1996)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
34.
1996

Feng Z. C.; Chou H. C.; Rohatgi A.; Lim G. K.; Wee A. T. S.; Tan K. L.

Correlations between CdTe/CdS/SnO2/glass solar cell performance and the interface/surface properties
J. Appl. Phys. 79, 2151 (1996)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332‐0250;
35.
1996

Rohatgi A.; Chou H. C.; Jokerst N. M.; Thomas E. W.; Ferekides C.; Kamra S.; Feng Z. C.; Dugan K. M.

Effects of CdTe growth conditions and techniques on the efficiency limiting defects and mechanisms in CdTe solar cells
AIP Conf. Proc. 353, 368 (1996)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
36.
1996

Rohatgi A.; Sana P.; Cai L.; Doolittle W. A.; Kamra S.; Doshi P.; Krygowski T.; Crotty G.

Fabrication and analysis of high efficiency multicrystalline silicon solar cells
AIP Conf. Proc. 353, 126 (1996)
University Center of Excellence for Photovoltaics, Research and Education, Atlanta, Georgia 30332‐0250;
37.
1995

Augustine G.; Rohatgi A.; Jokerst N. M.; Dhere R.

Concentration‐dependent near and above band edge absorption in doped InP and its effect on solar cell modeling
J. Appl. Phys. 78, 2666 (1995)
Microelectronics Research Center, School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332‐0250;
38.
1995

Chou H. C.; Rohatgi A.; Thomas E. W.; Kamra S.; Bhat A. K.

Effects of Cu on CdTe/CdS; Heterojunction Solar Cells with Au/Cu Contacts
J. Electrochem. Soc. 142, 254 (1995)
School of Electrical and Computer Enginedering, Georgia Institute of Technology, Atlanta, Georgia 30332
39.
1994

Rohatgi A.; Chen Z.; Doshi P.; Pham T.; Ruby D.

High‐efficiency silicon solar cells by rapid thermal processing
Appl. Phys. Lett. 65, 2087 (1994)
University Center of Excellence for Photovoltaics Research and Education, Georgia Institute of Technology, Atlanta, Georgia 30332
40.
1994

Chen Z.; Rohatgi A.; Bell R. O.; Kalejs J. P.

Defect passivation in multicrystalline‐Si materials by plasma‐enhanced chemical vapor deposition of SiO;2/SiN coatings
Appl. Phys. Lett. 65, 2078 (1994)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
41.
1994

Rohatgi A.; Chen Z.; Sana P.; Evers N.; Ramanachalam R.; Doolittle A.

Gettering and passivation techniques for quality enhancement of multicrystalline silicon
AIP Conf. Proc. 306, 505 (1994)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
42.
1994

Rohatgi A.; Chou H. C.; Kamra S.; Bhat A. K.

Investigation of efficiency limiting defects and rapid thermal processing of MOCVD grown CdTe solar cells
AIP Conf. Proc. 306, 354 (1994)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
43.
1994

Doolittle W. A.; Rohatgi A.

A new figure of merit and methodology for quantitatively determining defect resolution capabilities in deep level transient spectroscopy analysis
J. Appl. Phys. 75, 4570 (1994)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
44.
1994

Doolittle W. A.; Rohatgi A.

Comparison of covariance linear predictive modeling to the modulation function method for use in deep level transient spectroscopy
J. Appl. Phys. 75, 4560 (1994)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
45.
1994

Yasutake K.; Chen Z.; Pang S. K.; Rohatgi A.

Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface
J. Appl. Phys. 75, 2048 (1994)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
46.
1994

Sana Peyman; Rohatgi Ajeet; Kalejs Juris P.; Bell Richard O.

Gettering and hydrogen passivation of edge‐defined film‐fed grown multicrystalline silicon solar cells by Al diffusion and forming gas anneal
Appl. Phys. Lett. 64, 97 (1994)
University Center of Excellence for Photovoltaics Research and Education, Georgia Institute of Technology, Atlanta, Georgia 30332‐0250;
47.
1993

Pang S. K.; Rohatgi A.

A new methodology for separating Shockley–Read–Hall lifetime and Auger recombination coefficients from the photoconductivity decay technique
J. Appl. Phys. 74, 5554 (1993)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
48.
1993

Chen Z.; Yasutake K.; Doolittle A.; Rohatgi A.

Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma‐enhanced chemical vapor deposition
Appl. Phys. Lett. 63, 2117 (1993)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
49.
1993

Chen Z.; Pang S. K.; Yasutake K.; Rohatgi A.

Plasma‐enhanced chemical‐vapor‐deposited oxide for low surface recombination velocity and high effective lifetime in silicon
J. Appl. Phys. 74, 2856 (1993)
School of Electrical Engineering, Georgia Institute Technology, Atlanta, Georgia 30332
50.
1993

Smith A. W.; Rohatgi A.

Re‐evaluation of the derivatives of the half order Fermi integrals
J. Appl. Phys. 73, 7030 (1993)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
51.
1992

Doolittle William A.; Rohatgi Ajeet

A novel computer based pseudo‐logarithmic capacitance/conductance DLTS system specifically designed for transient analysis
Rev. Sci. Instrum. 63, 5733 (1992)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
52.
1992

Rohatgi A.; Sana P.; Chen Z.; Salami J.

Approach towards high efficiency polycrystalline silicon solar cells
AIP Conf. Proc. 268, 413 (1992)
Georgia Institute of Technology, Atlanta, Georgia 30332
53.
1992

Rohatgi A.; Chou H. C.; Bhat A.; Sudharsanan R.

An improved understanding of efficiency limiting defects in polycrystalline CdTe/CdS solar cells
AIP Conf. Proc. 268, 243 (1992)
Georgia Institute of Technology, Atlanta, Georgia 30332
54.
1992

Augustine G.; Jokerst N. M.; Rohatgi A.

Single‐crystal thin film InP; Fabrication and absorption measurements
Appl. Phys. Lett. 61, 1429 (1992)
Microelectronics Research Center, School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332‐0250;
55.
1991

Ringel S. A.; Smith A. W.; MacDougal M. H.; Rohatgi A.

The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells
J. Appl. Phys. 70, 881 (1991)
School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332
56.
1991

Pang S. K.; Rohatgi A.

Record high recombination lifetime in oxidized magnetic Czochralski silicon
Appl. Phys. Lett. 59, 195 (1991)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
57.
1991

Ramanachalam M. S.; Rohatgi A.; Schaffer J. P.; Gupta T. K.

Characterization of ZnO varistor degradation using lifetime positron‐annihilation spectroscopy
J. Appl. Phys. 69, 8380 (1991)
Georgia Institute of Technology, Atlanta, Georgia 30332‐0245;
58.
1991

Pang S. K.; Rohatgi A.

Effect of Oxygen Concentration on Lifetime in Magnetic Czochralski Silicon
J. Electrochem. Soc. 138, 523 (1991)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
59.
1990

Pang S. K.; Rohatgi A.; Sopori B. L.; Fiegl G.

A Comparison of Minority‐Carrier Lifetime in As‐Grown and Oxidized Float‐Zone, Magnetic Czochralski, and Czochralski Silicon
J. Electrochem. Soc. 137, 1977 (1990)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
60.
1990

Ringel S. A.; Sudharsanan R.; Rohatgi A.; Owens M. S.; Gillis H. P.

Effects of annealing and surface preparation on the properties of polycrystalline CdZnTe films grown by molecular beam epitaxy
J. Vac. Sci. Technol. A 8, 2012 (1990)
Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332
61.
1989

Gupta T. K.; Straub W. D.; Ramanachalam M. S.; Schaffer J. P.; Rohatgi A.

Grain‐boundary characterization of ZnO varistors by positron annihilation spectroscopy
J. Appl. Phys. 66, 6132 (1989)
Alcoa Laboratories, Alcoa Center, Pennsylvania 15069
62.
1989

Feng Z. C.; Perkowitz S.; Sudharsanan R.; Erbil A.; Pollard K. T.; Rohatgi A.; Bradshaw J. L.; Choyke W. J.

Photoluminescence of Cd1-;xMnxTe films grown by metalorganic chemical vapor deposition
J. Appl. Phys. 66, 1711 (1989)
Department of Physics, Emory University, Atlanta, Georgia 30322
63.
1989

Ciszek T. F.; Wang Tihu; Schuyler T.; Rohatgi A.

Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in Float‐Zoned Silicon
J. Electrochem. Soc. 136, 230 (1989)
Solar Energy Research Institute, Golden, Colorado 80401
64.
1988

Feng Z. C.; Sudharsanan R.; Perkowitz S.; Erbil A.; Pollard K. T.; Rohatgi A.

Raman scattering characterization of high‐quality Cd;1-;xMnxTe films grown by metalorganic chemical vapor deposition
J. Appl. Phys. 64, 6861 (1988)
Department of Physics, Emory University, Atlanta, Georgia 30322
65.
1988

DeWald A. B.; Nielsen B.; Frost R. L.; Ringel S. A.; Schaffer J. P.; Rohatgi A.; Lynn K. G.

Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cells
J. Vac. Sci. Technol. A 6, 2248 (1988)
Georgia Institute of Technology, Atlanta, Georgia 30332
66.
1988

Rohatgi A.; Pang S. K.; Gupta T. K.; Straub W. D.

The deep level transient spectroscopy studies of a ZnO varistor as a function of annealing
J. Appl. Phys. 63, 5375 (1988)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
67.
1986

Singh Ranbir; Fonash S. J.; Rohatgi A.

Interaction of low‐energy implanted atomic H with slow and fast diffusing metallic impurities in Si
Appl. Phys. Lett. 49, 800 (1986)
Engineering Science Program, Pennsylvania State University, University Park, Pennsylvania 16802
68.
1986

Rohatgi A.; Meier D. L.; Rai-Choudhury P.; Fonash S. J.; Singh R.

Effect of low‐energy hydrogen ion implantation on dendritic web silicon solar cells
J. Appl. Phys. 59, 4167 (1986)
School of Electrical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
69.
1986

Mu X. C.; Fonash S. J.; Rohatgi A.; Rieger J.

Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogen
Appl. Phys. Lett. 48, 1147 (1986)
Engineering Sciences Program, The Pennsylvania State University, University Park, Pennsylvania 16802
70.
1986

Rohatgi A.; Rai-Choudhury P.; Fonash S. J.; Lester P.; Singh Ranbir; Caplan P. J.; Poindexter E. H.

Characterization and Control of Silicon Surface Modification Produced by CCl4 Reactive Ion Etching
J. Electrochem. Soc. 133, 408 (1986)
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
71.
1986

Sinharoy S.; Hoffman R. A.; Rohatgi A.; Farrow R. F. C.; Rieger J. H.

Epitaxial growth of LaF3 on GaAs(111)
J. Appl. Phys. 59, 273 (1986)
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
72.
1985

Mu X. C.; Fonash S. J.; Yang B. Y.; Vedam K.; Rohatgi A.; Rieger J.

Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen
J. Appl. Phys. 58, 4282 (1985)
Engineering Sciences Program, The Pennsylvania State University, University Park, Pennsylvania 16802
73.
1985

Fonash S. J.; Singh Ranbir; Rohatgi A.; Rai-Choudhury P.; Caplan P. J.; Poindexter E. H.

Silicon damage caused by CCl4 reactive ion etching: Its characterization and removal by rapid thermal annealing
J. Appl. Phys. 58, 862 (1985)
Engineering Science Program, The Pennsylvania State University, University Park, Pennsylvania 16802
74.
1984

Singh Ranbir; Fonash S. J.; Rohatgi A.; Choudhury P. Rai; Gigante J.

A low‐temperature process for annealing extremely shallow As;+‐implanted ;n+/p junctions in silicon
J. Appl. Phys. 55, 867 (1984)
Engineering Sciences Program, The Pennsylvania State University, University Park, Pennsylvania 16802
75.
1982

Ta L. B.; Hobgood H. M.; Rohatgi A.; Thomas R. N.

Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs
J. Appl. Phys. 53, 5771 (1982)
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
76.
1980

Rohatgi A.; Rai-Choudhury P.

Process‐Induced Effects on Carrier Lifetime and Defects in Float Zone Silicon
J. Electrochem. Soc. 127, 1136 (1980)
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235

Co-authors

Co-publications
9

Nakayashiki, Kenta
7

Fonash, Stephen J.
6

Kim, Dae Sin
5

Kalejs, Juris P.
4

Hilali, Mohamed M.
4

Stavola, Michael
3

Sheoran, Manav
3

Ebong, A
2

Feng, Zhe Chuan
2

Asher, Sally
2

Kleekajai, Suppawan
2

Jiang, Fan
2

Ostapenko, Sergei
2

Poindexter, Edward H.
2

Tarasov, Igor